JPH02104010A - Manufacture of surface acoustic wave device - Google Patents
Manufacture of surface acoustic wave deviceInfo
- Publication number
- JPH02104010A JPH02104010A JP25477988A JP25477988A JPH02104010A JP H02104010 A JPH02104010 A JP H02104010A JP 25477988 A JP25477988 A JP 25477988A JP 25477988 A JP25477988 A JP 25477988A JP H02104010 A JPH02104010 A JP H02104010A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- acoustic wave
- surface acoustic
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 238000010304 firing Methods 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 7
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000000654 additive Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、表面弾性波デバイス（以下、ＳＡＷデバイ
スと称す）の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a surface acoustic wave device (hereinafter referred to as a SAW device).
（従来の技術〕
第２図（ａ） 〜（Ｃ）は第２図（ｄ）に示す従来のＳ
ＡＷデバイスに至るまでの製造工程を説明するためのＡ
−Ａ断面図である。図において、ｌは基板としての例え
ばＢｒ、ｔＧｅＯ□。基板（以下、ＢＧＯ基板と称す）
、２は真空蒸着装置等でＢＧＯ基板ｌ上に成膜された導
体膜としてのＡｌ膜、４はフォトレジストである。(Prior art) Figures 2(a) to (C) show the conventional S shown in Figure 2(d).
A for explaining the manufacturing process leading up to AW devices
-A sectional view. In the figure, l is a substrate such as Br, tGeO□. Substrate (hereinafter referred to as BGO substrate)
, 2 is an Al film as a conductor film formed on the BGO substrate l using a vacuum evaporation device or the like, and 4 is a photoresist.
次に製造工程について説明する。ＢＧＯ基板１を洗浄・
乾燥後、真空蒸着法等により全面にＡＩ成膜を成膜する
。この状態を第２図（ａ）を示す。次いで、第２図Φ）
に示すように現在半導体ＩＣ製造分野で広く用いられて
いるフォトリソグラフィ技術を用いてフォトレジスト４
の所望のパターンを得る。Next, the manufacturing process will be explained. Clean the BGO substrate 1.
After drying, an AI film is formed on the entire surface by vacuum evaporation method or the like. This state is shown in FIG. 2(a). Next, Fig. 2 Φ)
As shown in FIG.
obtain the desired pattern.
次いで、フォトレジスト４をエツチングマスクとしてＡ
ｌ膜２を乾式または湿式エツチング法にてエツチングし
、不要部分のＡｌ １１１１２を除去する。Next, using the photoresist 4 as an etching mask, A
The Al film 2 is etched using a dry or wet etching method to remove unnecessary portions of Al 11112.
その後、フォトレジスト４を剥離除去した状態が第２図
（Ｃ）である。Thereafter, the photoresist 4 is peeled off and removed, as shown in FIG. 2(C).
従来のＳＡＷデバイスの製造方法は以上のように行われ
ているので高価な真空蒸着装置等を使用しなければなら
ず、また、導体膜としてＡＩ成膜を使用するため、実装
後の使用環境によっては、ＡＩ成膜が腐食され断線不良
を起こしたり、Ａ１金属の電極間金属移行により電極間
短絡不良を起こずなど、信頼性上問題があった。さらに
、ワイヤーボンディング性において、ＡＩ成膜であるた
めＡＩ ワイヤー、Ａｕワイヤー共、充分な接続強度が
得られず実装後の機械的衝撃や熱ストレスにより強度劣
化を起こすなどの問題点があった。尚、近位技術として
特公昭５Ｂ−５５６８６号、特公昭５９−４５２８５号
公報記載のものがある。Since the conventional manufacturing method of SAW devices is performed as described above, it is necessary to use expensive vacuum evaporation equipment, etc. Also, since AI film formation is used as the conductor film, it may vary depending on the usage environment after mounting. However, there were problems in terms of reliability, such as corrosion of the AI film, which caused disconnection, and inter-electrode short-circuiting caused by the transfer of the A1 metal between the electrodes. Furthermore, in terms of wire bonding properties, since an AI film is formed, sufficient connection strength cannot be obtained for both the AI wire and the Au wire, resulting in strength deterioration due to mechanical shock and thermal stress after mounting. Incidentally, as proximal techniques, there are those described in Japanese Patent Publication No. 5B-55686 and Japanese Patent Publication No. 45285-1985.
この発明は上記のような問題点を解消するためになされ
たもので、高価な真空蒸着装置等を使用せずとも製造出
来ると共に、従来よりも信頼性の高いＳＡＷデバイスの
製造方法を得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to provide a method for manufacturing SAW devices that can be manufactured without using expensive vacuum evaporation equipment and is more reliable than conventional methods. purpose.
〔課題を解決するための手段］
この発明に係わるＳＡＷデバイスの製造方法は、導体膜
の形成を金属有機化合物（Ｍｅｔａｌｌｏ Ｏｒ（Ｈａ
ｎｉｃＣｏｍｐｏｕｎｄ−以下、Ｍ、Ｏ，Ａｕと称す）
の印刷・焼成により行うものである。[Means for Solving the Problems] A method for manufacturing a SAW device according to the present invention uses a metal organic compound (Metallo Or (Ha) to form a conductive film.
nicCompound (hereinafter referred to as M, O, Au)
This is done by printing and firing.
（作 用〕
この発明における導体膜の形成は、Ｍ、０．Ａｕの印刷
・焼成により行うため高価な真空蒸着装置を必要とせず
導体膜を形成できる。また、導体膜として特にＡｕ膜を
用いると、実装後の使用環境による導体パターンの腐食
断線不良や電極間金属移行による短絡不良は皆無に近く
なり、さらにＡｕ線のワイヤーボンディングにおいても
接合強度が向上し、ＳＡＷデバイスの信頼性が大幅に改
善できる。(Function) Since the conductor film in this invention is formed by printing and firing M, 0.Au, the conductor film can be formed without the need for an expensive vacuum evaporation device.Furthermore, in particular, an Au film is used as the conductor film. As a result, the occurrence of corrosion and disconnection of the conductor pattern due to the usage environment after mounting and short-circuit defects due to metal transfer between electrodes is almost completely eliminated.Furthermore, the bonding strength of Au wire wire bonding is improved, and the reliability of SAW devices is greatly improved. It can be improved.
以下、この発明の一実施例を図について説明する。第１
図（ａ）〜（Ｃ）は、第１図ｄに示す本発明におけるＳ
ＡＷデバイスに至るまでの製造工程を説明するためのＡ
−Ａ断面図である。図において、■は基板としての例え
ばＢＧＯ基板、３はＢ Ｇ Ｏ基板１上に印刷・焼成さ
れたＭ、Ｏ，Ａｕ膜、４はフォトレジストである。An embodiment of the present invention will be described below with reference to the drawings. 1st
Figures (a) to (C) show the S in the present invention shown in Figure 1 d.
A for explaining the manufacturing process leading up to AW devices
-A sectional view. In the figure, ▪ is a substrate such as a BGO substrate, 3 is an M, O, Au film printed and fired on the BGO substrate 1, and 4 is a photoresist.
次に製造工程について説明する。Ｂ（’、０基板１を洗
浄・乾燥後、Ｍ 、 Ｏ、Ａ ｕペーストをスクリーン
印刷機にて基板表面にベタ印刷する。その後、大気中で
例えばｌ ＯＯ’Ｃで１０分間乾燥し、焼成は、例えば
、昇温３０°Ｃ／分で７５０ ”Ｃまで昇温し、１０分
間７５０ ’Ｃを保持し、４０°Ｃ／分で降温するとＭ
、Ｏ，Ａｕ膜３が得られる。この状態を第１図（ａ）に
示す。次に第１図（＋））に示すように従来の製造方法
と同じくフォトリソグラフィ技術にてフすトレジスト４
の所望のパターンを得る。次いで、フォトレジスト４を
エツチングマスクとしてＭ 、 Ｏ、Ａ ｕ膜３をヨウ
素ヨウ化カリ系エツチング液もしくは、シアン系エツチ
ング液夜にて工・ンチングし、不要部分のＭ、０．Ａｕ
膜３を除去する。その後、フォトレジスト４を剥離除去
した状態が第１図（Ｃ）である。Next, the manufacturing process will be explained. After cleaning and drying the B(', 0 substrate 1), M, O, Au paste is printed all over the substrate surface using a screen printer. Thereafter, it is dried for 10 minutes in the atmosphere at, for example, lOO'C, and then baked. For example, if the temperature is raised to 750'C at a rate of 30°C/min, held at 750'C for 10 minutes, and then lowered at a rate of 40°C/min, M
, O, Au film 3 is obtained. This state is shown in FIG. 1(a). Next, as shown in FIG.
obtain the desired pattern. Next, using the photoresist 4 as an etching mask, the M, O, Au film 3 is etched using an iodine-potassium iodide etching solution or a cyanide-based etching solution to remove unnecessary portions of the M, O, Au film 3. Au
Remove membrane 3. Thereafter, the photoresist 4 is peeled off and removed, as shown in FIG. 1(C).
尚、上記実施例では、Ｍ、Ｏ，Ａｕ膜３のエツチングと
してヨウ素ヨウ化カリ等の湿式エンチングを記載したが
、イオンミーリング等の乾式エツチングでも同様の効果
が得られる。In the above embodiment, wet etching using iodine or potassium iodide is used as the etching for the M, O, Au film 3, but similar effects can be obtained by dry etching such as ion milling.
また、上記実施例では、基板としてＢ ｉ ＋ ｚ Ｇ
ｅ Ｏ□。Further, in the above embodiment, the substrate is B i + z G
e O□.
基板を例に挙げて説明したが、ＬｉＮｂ０．基板やＬ
ｉ Ｔ ａ Ｏ：１基板や水晶基板等の圧電基板であっ
てもよく、上記実施例と同様の効果を奏する。The explanation was given using a substrate as an example, but LiNb0. board and L
A piezoelectric substrate such as an i T a O:1 substrate or a quartz substrate may be used, and the same effects as in the above embodiments can be achieved.
また、上記実施例のＭ、Ｏ，Ａｕ中には、Ａｕとベース
樹脂以外にビヒクルとしてＢｉ （ビスマス）やＶ（
バナジュウム）等の元素が添加物として含まれており、
この添加物が焼成時に基板（母材）最表面に拡散してお
り、Ｍ、０．Ａｕ膜のエンチング後も表面に残留し表面
弾性波デバイスの特性を劣化させる要因となる場合があ
る。（ペーストメーカーによって添加物や添加量が異な
る。）このため、この拡散層をライトエツチングすると
、より良い結果が得られる。In addition to Au and the base resin, M, O, and Au in the above examples also contain Bi (bismuth) and V(
Contains elements such as vanadium) as additives,
This additive is diffused to the outermost surface of the substrate (base material) during firing, and M, 0. Even after the Au film is etched, it may remain on the surface and become a factor that deteriorates the characteristics of the surface acoustic wave device. (The additives and amounts added vary depending on the paste manufacturer.) For this reason, better results can be obtained by light etching this diffusion layer.
また、上記の添加物や添加量をコントロールすることに
より表面弾性波デバイスの特性を意図的に変化させるこ
とができる。Further, by controlling the above-mentioned additives and their additive amounts, the characteristics of the surface acoustic wave device can be intentionally changed.
〔発明の効果］ 以上のように、この発明によれば導体膜をＭ。〔Effect of the invention] As described above, according to the present invention, the conductive film is M.
０ 、 Ａ ｕ膜で形成したので安価な装置で形成でき
、また大気中で連続して形成できるため量産性が高く、
安価なＳＡＷデバイスが提供できる。また、特に導体膜
としてＡｕ膜を使用すると、断線不良や短絡不良が皆無
に近（なり、ワイヤーボンディング接合強度が向上する
等、総合的な信頼性が向上する。Since it is formed using a 0.0, Au film, it can be formed using inexpensive equipment, and it can be formed continuously in the atmosphere, making it highly suitable for mass production.
An inexpensive SAW device can be provided. In addition, especially when an Au film is used as the conductor film, there are almost no disconnections or short circuits, and overall reliability is improved, such as improved wire bonding strength.
第１図（ａ）〜（Ｃ）は第１図（ｄ）に示すこの発明の
一実施例によるＳＡＷデバイスに至るまでの製造工程を
説明するためのＡ−Ａ断面図、第２図（ａ）〜（Ｃ）は
第２図（ｄ）に示す従来のＳＡＷデバイスに至るまでの
製造工程を説明するためのＡ−Ａ断面図である。
ｌはＢＧＯ基板（基板）、３はＭ、Ｏ，Ａｕ膜（導体膜
）、４はフォトレジスト。
尚、図中、同一符号は同一、又は相当部分を示す。
特許出願人 三菱電機株式会社
第
図
（ｄ）FIGS. 1(a) to (C) are sectional views taken along line A-A for explaining the manufacturing process up to the SAW device according to an embodiment of the present invention shown in FIG. 1(d), and FIG. 2(a). ) to (C) are sectional views taken along line A-A for explaining the manufacturing process up to the conventional SAW device shown in FIG. 2(d). 1 is a BGO substrate (substrate), 3 is an M, O, Au film (conductor film), and 4 is a photoresist. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Patent applicant Mitsubishi Electric Corporation Figure (d)
Claims (1)
の製造方法において、前記導体膜の形成は金属有機化合
物の印刷・焼成により行うことを特徴とする表面弾性波
デバイスの製造方法。A method of manufacturing a surface acoustic wave device comprising forming a conductor film on the surface of a substrate, wherein the conductor film is formed by printing and firing a metal organic compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25477988A JPH02104010A (en) | 1988-10-12 | 1988-10-12 | Manufacture of surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25477988A JPH02104010A (en) | 1988-10-12 | 1988-10-12 | Manufacture of surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02104010A true JPH02104010A (en) | 1990-04-17 |
Family
ID=17269767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25477988A Pending JPH02104010A (en) | 1988-10-12 | 1988-10-12 | Manufacture of surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02104010A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8677582B2 (en) * | 2006-03-02 | 2014-03-25 | Murata Manufacturing Co., Ltd. | Method for fabricating acoustic wave device |
-
1988
- 1988-10-12 JP JP25477988A patent/JPH02104010A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8677582B2 (en) * | 2006-03-02 | 2014-03-25 | Murata Manufacturing Co., Ltd. | Method for fabricating acoustic wave device |
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