JPH0210346A - Pattern forming material - Google Patents

Abstract

PURPOSE:To improve the production yield of the title material, without generating a faulty pattern caused by the exposure of excimer laser beams, etc., by incorporating a specified compd. in the material. CONSTITUTION:The pattern forming material is composed of a 1,2-quinone diazide sulfonyl chloride compd. (A) and an alkali-soluble resin (B). The component (A) is preferably composed of 1,2-naphtoquinone diazide-4-sulfonyl chloride, etc. The 1,2-quinone diazide compd. such as 1,2-naphtoquinone diazide, etc., is preferably used instead of the component (A). A novolak resin, etc., is preferably used for the component (B), and, the pattern forming material comprises preferably a compd. contg. a group shown by formula I (such as a compd. shown by formula II).

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a pattern forming material mainly used in the semiconductor manufacturing process using excimer laser or deep ultraviolet rays, or in the soger eye process.

Conventional Techniques Phosphorography using deep ultraviolet rays and excimer lasers makes it possible to form high-resolution patterns by taking advantage of its short wavelength properties. However, the pattern forming material (resist) used
It is difficult to obtain a well-shaped pattern due to the large light absorption ratio of M.
2Ll, Proceedings of SPIIC, 138(1)
987), l.

A pattern forming method using a conventional pattern forming material will be explained with reference to FIG.

MP24, which is a conventional patterning material 2', is deposited on the substrate 1.
Then, a desired pattern is exposed through a mask 3 using a KrF excimer laser stepper (N, 3a) (FIG. 2B). After this, use MP2401 2 which is an alkaline developer.
Development was carried out for 60 seconds using a% aqueous i'& (Shipuni) to form a pattern 2' (FIG. 2G). Obtained 0
, 4 μm line and space pattern 2′ is 2
0π depletion I.

It was a defective pattern with an aspect ratio of 60°.

Such a defective pattern was a cause for concern because it caused a decrease in yield in subsequent semiconductor manufacturing processes.

Problems to be Solved by the Invention It is an object of the present invention to solve the problem of the prior art, which is the pattern failure of pattern forming materials when exposed to deep ultraviolet rays and excimer laser light.

Means for Solving the Problems The present invention solves the problems and troubles of the prior art.
-quinonediazide sulfonyl chloride.

The present invention provides a pattern forming material characterized by comprising 1,2-quinonediazide and an alkali-soluble resin.

Function The 1,2-quinonediazide sulfonyl chloride compound according to the present invention significantly controls the alkali solubility of the resin, and at the same time the exposed area becomes indene carbon, the effect of inhibiting the alkali solubility of the resin is also lost. From this, the pattern forming material using the 1,2-quinonediazide sulfonyl chloride compound of the present invention as a photoreceptor shows that even if light is diffracted into unexposed areas due to absorption of deep ultraviolet light or excimer laser light, it will not be diffracted. Since the alkali blocking property of the photoreceptor is still strong against low energy light, the pattern forming material in the unexposed area becomes insoluble in the alkaline phenomenon liquid.

As described above, with the pattern forming material of the present invention, it was possible to clearly distinguish exposed areas and unexposed areas with respect to deep ultraviolet light and excimer laser light, and a pattern with a good shape could be formed. It is believed that the sulfonyl chloride group in the 1,2-quinonediazide sulfonyl chloride compound has the effect of particularly inhibiting the alkali solubility of the resin.

It has been found that when the 1,2-quinonediazide compound according to the present invention is used as a photoreceptor, it enhances the photocrosslinking of the resin. That is, the 1,2-quinonediazide compound and the alkali-soluble resin made it a negative pattern forming material for deep ultraviolet light and excimer laser light. 1,
The 2-quinonediazide compound was able to form a well-shaped pattern because the 2-quinonediazide compound effectively promoted crosslinking to the interface with the substrate formed as a film as a pattern forming material.

The 1,2-quinonediazide sulfonyl chloride compound of the present invention is 1,2-natoquinonediazide-4-sulfonyl chloride.

1,2-naphthoquinonediazide-5-sulfonyl chloride, 1,2-naphthoquinonediazide-6-sulfonyl chloride, 1,2-naphthoquinonediazide-7-sulfonylflora()', 1,2-naphthoquinonediazide-
Examples of the 8-sulfonyl chloride and 1,2-quinonediazide compounds include, but are not limited to, 1,2-naphthoquinonediazide, and compounds based on benzene rings, naphthalene rings, anthracene rings, etc., or derivatives thereof. It may also be a compound.

It is also a good idea to add things. This helps improve the transmittance of the patterning material after exposure. Examples of these compounds include, for example, RIMA υ and alkali-soluble resins such as novolak resin.

Polyvinylphenol resin or its derivative resin.

Examples include (styrene-maleic acid ester) copolymer resin, but are not limited to these.

Example (Part 1) A pattern forming method using a pattern forming material according to an example of the present invention will be explained with reference to FIG.

A material having the following composition was synthesized as a pattern forming material in an example of the present invention.

Pattern forming material of the present invention #=+2 on a substrate 1 such as a semiconductor
To form a 1.0μ door (Fig. 1), a desired pattern is exposed through a mask 3 using a KrF excimer laser stepper (Fig. 1).
(Figure 1B). 1M after this
P2401 1 o manuscript solution was subjected to the phenomenon for 60 seconds to form two patterns (FIG. 1G). The two patterns obtained have an aspect ratio of 85° and 0.4 without any blurring.
The μm line and 8 Soubène pattern was torn.

(Part 2) Experiments similar to those in Example 1 were conducted using the pattern forming material of the present invention having the following composition, and a pattern of 0.4 μm and an aspect ratio of 85° was obtained.

The friction resistance of semiconductor device manufacturing is improved, and the industrial cost per ladle is very high.

[Brief explanation of the drawing]

Figure 1 is a sectional view of a pattern forming method using a pattern forming material according to an embodiment of the present invention. 1...Substrate, 2...Pattern shape of the present invention, plate material, 3...Mask, 4...KrF excimer laser light. Name of agent: Patent attorney Nakao Effects of the Invention By using the pattern forming material of the present invention, it is possible to easily form fine patterns with a high aspect ratio in the semiconductor manufacturing process.

Claims (6)

[Claims] (1) A pattern forming material comprising a 1,2-quinonediazide sulfonyl chloride compound and an alkali-soluble resin. (2) The pattern forming material according to claim 1, characterized in that a 1,2-quinonediazide compound is used instead of the 1,2-quinonediazide sulfonyl chloride compound. (3) The pattern forming material according to claim 1 or 2, further comprising a compound containing ▲a mathematical formula, a chemical formula, a table, etc.▼. (4) Claim 1, characterized in that the 1,2-quinonediazide sulfonyl chloride compound is 1,2-naphthoquinonediazide-4-sulfonyl chloride or 1,2-naphthoquinonediazide-5-sulfonyl chloride. Patterning material described (5) The pattern forming material according to claim 2, wherein the 1,2-quinonediazide compound is 1,2-naphthoquinonediazide. (6) Pattern formation according to claim 1, wherein the alkali-soluble resin is any one of a novolac resin, a polyvinylphenol resin or its derivative resin, and a (styrene/maleic acid ester) copolymer resin. material.