JPH02100969A - Thread guide - Google Patents
Thread guideInfo
- Publication number
- JPH02100969A JPH02100969A JP25439388A JP25439388A JPH02100969A JP H02100969 A JPH02100969 A JP H02100969A JP 25439388 A JP25439388 A JP 25439388A JP 25439388 A JP25439388 A JP 25439388A JP H02100969 A JPH02100969 A JP H02100969A
- Authority
- JP
- Japan
- Prior art keywords
- thread
- thread guide
- guide
- reaction chamber
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 abstract description 40
- 239000000758 substrate Substances 0.000 abstract description 25
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 229910021385 hard carbon Inorganic materials 0.000 abstract description 16
- 239000002994 raw material Substances 0.000 abstract description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000005284 excitation Effects 0.000 abstract description 6
- 238000009987 spinning Methods 0.000 abstract description 4
- 238000009941 weaving Methods 0.000 abstract description 3
- 238000005299 abrasion Methods 0.000 abstract description 2
- 239000004744 fabric Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 17
- 229910052799 carbon Inorganic materials 0.000 description 16
- 239000010432 diamond Substances 0.000 description 10
- 229910003460 diamond Inorganic materials 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- -1 ethylene, propylene Chemical group 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229960004424 carbon dioxide Drugs 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052716 thallium Inorganic materials 0.000 description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- 229910039444 MoC Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- PDKAXHLOFWCWIH-UHFFFAOYSA-N 1,1-dichlorobuta-1,3-diene Chemical compound ClC(Cl)=CC=C PDKAXHLOFWCWIH-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 229910012990 NiSi2 Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000779819 Syncarpia glomulifera Species 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000010727 cylinder oil Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- LRMHFDNWKCSEQU-UHFFFAOYSA-N ethoxyethane;phenol Chemical compound CCOCC.OC1=CC=CC=C1 LRMHFDNWKCSEQU-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 239000003502 gasoline Substances 0.000 description 1
- 239000012208 gear oil Substances 0.000 description 1
- 239000010649 ginger oil Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- VNKYTQGIUYNRMY-UHFFFAOYSA-N methoxypropane Chemical compound CCCOC VNKYTQGIUYNRMY-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 230000008775 paternal effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010665 pine oil Substances 0.000 description 1
- 239000001739 pinus spp. Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229940036248 turpentine Drugs 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Guides For Winding Or Rewinding, Or Guides For Filamentary Materials (AREA)
- Spinning Methods And Devices For Manufacturing Artificial Fibers (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は糸道に関し、さらに詳しくは、たとえば製糸
、紡績、織布等の糸にかかる分野で好適に使用すること
のできる耐用年数が長く、また糸との動摩擦係数が低い
糸道に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a yarn guide, and more specifically, it has a long service life and can be suitably used in fields related to yarn such as spinning, spinning, and weaving. , and also relates to a thread path with a low coefficient of dynamic friction with the thread.
[従来技術と発明が解決しようとするa題]製糸、紡績
、織布等の糸にかかる分野においては、糸の走行安定性
を保持するために、走行する糸を案内する糸道が使用さ
れている。[Prior Art and Problem to be Solved by the Invention] In fields related to yarn, such as silk reeling, spinning, and weaving, yarn guides are used to guide the traveling yarn in order to maintain the running stability of the yarn. ing.
ところで、従来使用されている糸道としては、超硬金属
等の金属や、アルミナ等のセラミックからなるもの等が
知られている。By the way, conventionally used thread guides include those made of metals such as cemented carbide metals and ceramics such as alumina.
しかしながら、これらの糸道は、高速走行する糸に激し
く摺擦され、また摺擦されることで発生する高熱ともあ
いまって著しく摩耗され、充分な耐用年数を確保するこ
とができなかった。However, these thread guides are subject to intense rubbing by the threads running at high speed, and combined with the high heat generated by the rubbing, they are subject to significant wear, making it impossible to ensure a sufficient service life.
また、従来の糸道は、糸を案内する部分に平滑処理を施
してはいるものの、糸に対する動摩擦係数を充分に低減
したものとは言い難く、その結果、糸切れや糸のケバ立
ち等を起しやすいという不都合を有していた。In addition, although conventional thread guides have been smoothed on the part that guides the thread, it cannot be said that the coefficient of dynamic friction against the thread has been sufficiently reduced, and as a result, thread breakage and thread fuzzing occur. It has the disadvantage of being easy to wake up.
一方、ダイヤモンド付き部材を、糸道基体に取り付けた
糸道(実開昭57−184853 )が報告されてはい
るが、前記ダイヤモンド付き部材が、前記摺擦、前記高
熱等により、前記糸道基体から離脱する恐れがあった。On the other hand, a thread guide in which a member with diamonds is attached to a thread guide base (Utility Model Application No. 57-184853) has been reported, but the member with diamonds is damaged by the friction, high heat, etc. There was a risk of leaving.
この発明は前記事情によりなされたものである。This invention was made in view of the above circumstances.
すなわち、この発明の目的は、耐用年数が艮く、また走
行する糸を損傷することなく案内することのできる糸道
を提供することにある。That is, an object of the present invention is to provide a thread path that has a long service life and can guide running threads without damaging them.
[前記課題を解決するための手段] 前記課題を解決するためのこの発明の構成は。[Means for solving the above problems] The structure of this invention for solving the above problem is as follows.
糸道基体−Lに硬質炭素質膜を形成してなることを特徴
とする糸道である。This thread guide is characterized by forming a hard carbonaceous film on the thread guide base-L.
以下に本発明の詳細な説IjIする。A detailed description of the invention is provided below.
(1)糸道基体
糸道基体の材質としては、硬質炭素JA膜を形成するこ
とが回走であれば、特に制限はなく、たとえば鉄、ニッ
ケル、クロム、マンガン、バナジウム、タングステン、
タリウム、モリブデン、シリコンなどの金属や合金等、
タンタル珪素、炭化モリブデン、炭化タングステン、ア
ルミナ、スピネル、炭化珪素などのセラミックスを挙げ
ることができる。(1) Thread guide base There are no particular restrictions on the material of the thread guide base, as long as it is possible to form a hard carbon JA film, such as iron, nickel, chromium, manganese, vanadium, tungsten,
Metals and alloys such as thallium, molybdenum, silicon, etc.
Examples include ceramics such as tantalum silicon, molybdenum carbide, tungsten carbide, alumina, spinel, and silicon carbide.
また、これらの中でも好ましいのは、WC−Go系合金
、We−TiC−Coo系合金、’rJc−TiC−T
aC−Co 7’i合金等の超硬合金である。Among these, preferred are WC-Go alloy, We-TiC-Coo alloy, and 'rJc-TiC-T.
It is a cemented carbide such as aC-Co 7'i alloy.
糸道基体の形状としては、走行する糸を案内するための
案内部を設けることのできる形状を有していれば、特に
制限はない。The shape of the yarn guide base is not particularly limited as long as it has a shape that allows a guide portion for guiding the traveling yarn to be provided.
前記案内部の形状としては、特に制限はなく、たとえば
第1図に示すように糸道基体に設けた溝が案内部1、第
2図、第3図に示すように前記糸道基体に設けた貫通孔
が案内部1、または第4図に示すようにロール面全体が
案内部1も形成するもの等が挙げられる。The shape of the guide part is not particularly limited, and for example, the guide part 1 may have a groove provided in the thread guide base as shown in FIG. 1, or a groove provided in the thread guide base as shown in FIGS. 2 and 3. Examples include those in which the through holes formed in the roll form the guide part 1, or the entire roll surface also forms the guide part 1, as shown in FIG.
なお、前記溝や貫通孔は、直線的に設ける必要はなく、
前記案内部がたとえば貫通孔である場合、第3図に示す
ように、貫通孔が湾曲するものであってもよい。Note that the grooves and through holes do not need to be provided linearly;
When the guide portion is, for example, a through hole, the through hole may be curved, as shown in FIG.
この発【」は、前記糸道基体上に以下に説明する硬質炭
素質膜を形成してなる。This invention is made by forming a hard carbonaceous film as described below on the thread guide substrate.
(2)硬質炭素質膜
硬質炭素質膜は、ダイヤモンド状炭素および/またはダ
イヤモンドからなる膜である。(2) Hard carbonaceous film The hard carbonaceous film is a film made of diamond-like carbon and/or diamond.
前記硬質炭素質膜は、前記糸道基体上に形成される。The hard carbonaceous membrane is formed on the thread guide substrate.
前記硬質炭素質膜の厚さは、通常0.1 sm以上であ
り、好ましくは0.5〜30gmである。The thickness of the hard carbonaceous film is usually 0.1 sm or more, preferably 0.5 to 30 gm.
なお、前記硬質炭素膜は、少なくとも前記案内部に設け
てあれば良く、所望により糸道基体の全表面に形成して
もよいし、前記案内部のみに形成してもよい。The hard carbon film may be provided at least on the guide portion, and may be formed on the entire surface of the thread guide base, or may be formed only on the guide portion, if desired.
なお、この発明は、前記糸道基体上に、以下に説明する
中間層を介して前記硬質炭素質膜を形成することもでさ
る。The present invention also includes forming the hard carbonaceous film on the thread guide substrate via an intermediate layer, which will be described below.
(3)中間層
前記中間層は、前記糸道基体と前記硬質炭素質膜との密
着性を高める作用乃至機能を有する。(3) Intermediate layer The intermediate layer has an action or function of increasing the adhesion between the thread guide base and the hard carbonaceous membrane.
前記中間層を形成する成分としては、前記作用乃至機虎
を有する限りは、特に制限はなく、たとえば周期律表の
rVa 、 Va 、 VTa 、■2、■族の金属(
以下、単に金属と言うことがある。)、前記金属の炭化
物、前記金属の酸化物、前記金属のホウ化物、前記金属
のケイ化物またはケイ素等を挙げることができる。The component forming the intermediate layer is not particularly limited as long as it has the above-mentioned action or function, and for example, metals of groups rVa, Va, VTa, 2, and 2 of the periodic table.
Hereinafter, it may simply be referred to as metal. ), carbides of the metals, oxides of the metals, borides of the metals, silicides of the metals, silicon, and the like.
前記金属としては、たとえば、チタン、バナジウム、ク
ロム、マンガン、鉄、コバルト、ニッケル、ジルコニウ
ム、ニオブ、モリブデン、テクネチウム、ルテニウム、
ロジウム、パラジウム、ハフニウム、タリウム、タング
ステン、レニウム、オスミウム、イリジウム、プラチナ
等を挙げることができる。Examples of the metal include titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zirconium, niobium, molybdenum, technetium, ruthenium,
Examples include rhodium, palladium, hafnium, thallium, tungsten, rhenium, osmium, iridium, and platinum.
なお、これらの中でも好ましいのは、タングステン、チ
タン、タリウムであり、さらに好ましいのは、タングス
テンである。Note that among these, tungsten, titanium, and thallium are preferable, and tungsten is more preferable.
前記金属の炭化物としては、前記金属の炭化物であれば
、特に制限するものではないが、好ましくは、用いる糸
道基体の金属成分と同じ金属の炭化物であり、たとえば
糸道基体として超硬合金を用イル(7)−cあhtf、
wc、 NiC、Tic 、Tic、MoC等を挙げ
ることができる。The carbide of the metal is not particularly limited as long as it is a carbide of the metal, but it is preferably a carbide of the same metal as the metal component of the thread guide base used. For example, if a cemented carbide is used as the thread guide base, il(7)-cahtf,
Examples include wc, NiC, Tic, Tic, MoC, and the like.
前記金属の酸化物としては、前記金属の炭化物であれば
、特に制限するものではないが、好ましくは、用いる糸
道基体の金属成分と同じ金属の酸化物であり、たとえば
糸道基体として超硬合金を用イルノテあれば、WO2,
W(h 、 NiO、Ti01T i02、TizOr
、 MoO2、MoO3等を挙げることができる−
前記金属のホウ化物としては、前記金属の炭化物であれ
ば、特に制限するものではないが、好ましくは、用いる
糸道基体の金属成分と同じ金属のホウ化物であり、たと
えば糸道基体として超硬合金を用イルノテあれば、WB
、W2B 、NiC、TiB、MoB 、 MO2B等
を挙げることができる。The oxide of the metal is not particularly limited as long as it is a carbide of the metal, but it is preferably an oxide of the same metal as the metal component of the thread guide base used, for example, carbide as the thread guide base. If you use alloy, WO2,
W(h, NiO, Ti01T i02, TizOr
, MoO2, MoO3, etc. The metal boride is not particularly limited as long as it is a carbide of the metal, but preferably a boride of the same metal as the metal component of the thread guide base used. For example, if cemented carbide is used as the thread guide base, WB
, W2B, NiC, TiB, MoB, MO2B, etc.
前記金属のケイ化物としては、前記金属のケイ化物であ
れば、特に制限するものではないが、好ましくは、用い
る糸道基体の金属成分と同じ金属のケイ化物゛であり、
たとえば糸道基体として超硬合金を用いるのであれば、
WSi2、NiSi2 。The silicide of the metal is not particularly limited as long as it is a silicide of the metal, but is preferably a silicide of the same metal as the metal component of the thread guide base used.
For example, if cemented carbide is used as the thread guide base,
WSi2, NiSi2.
Pd2Si 、PtSi、MoSi2等を挙げることが
できる。Examples include Pd2Si, PtSi, MoSi2, etc.
前記ケイ素は、ケイ素に限ることなく、炭化ケイ素であ
ってもよい。The silicon is not limited to silicon, and may be silicon carbide.
前記中間層に糸道基体に含有する金属成分と同じ前記金
属、前記金属炭化物または前記金属のケイ化物を用いる
ことにより、また糸道基体がケイ素を含むものであれば
、前記中間層に前記ケイ素を用いることにより、糸道基
体と前記中間層との密着性を、より高めることができる
。By using the same metal, metal carbide, or silicide of the metal as the metal component contained in the thread guide base in the intermediate layer, or if the thread guide base contains silicon, the intermediate layer contains silicon. By using this, it is possible to further improve the adhesion between the thread guide base and the intermediate layer.
前記中間層の厚さは、通常、0.01〜5μmであり、
好ましくは0.05〜3kmである。The thickness of the intermediate layer is usually 0.01 to 5 μm,
Preferably it is 0.05-3 km.
なお、前記層厚が0.01 g m未満であると、糸道
基体と硬質炭素質1漠との密着性の向」二がみられない
ことがあり、また5層mを超えても相応する効果が得ら
れない場合がある。In addition, if the layer thickness is less than 0.01 g m, the adhesion between the thread guide base and the hard carbon material may not be observed, and even if the layer thickness exceeds 5 m, the adhesion may not be as good. You may not be able to obtain the desired effect.
また、前記中間層の層数は、1層であってもよいし、2
層以上の多層構成になっていてもよい。Further, the number of layers of the intermediate layer may be one layer, or two layers.
It may have a multilayer structure of more than one layer.
なお、中間層が多層構成の場合においては、同じ成分の
中間層を毛ねるものであってもよいし、異なる成分の中
間層を重ねるものであってもよい。In addition, in the case where the intermediate layer has a multilayer structure, the intermediate layers may be made of the same component, or may be made of different components.
前記中間層は、糸道基体の全表面に形成せしめてもよい
し、前記案内部のみに硬質炭素質膜を形成する場合には
、少なくとも硬質)父素質膜を形成する部分に形成する
ものであってもよい。The intermediate layer may be formed on the entire surface of the thread guide base, or in the case where the hard carbonaceous film is formed only on the guide part, it is formed at least on the part where the hard (hard) paternal film is to be formed. There may be.
このような硬質′fX素質1漠または中間層を糸道基体
上に形成するには、以下に示す方法を採用することがで
きる。In order to form such a hard 'fX material 1 layer or an intermediate layer on the thread guide substrate, the following method can be adopted.
(4)硬質炭素質膜の形成方法
原料ガスを励起して得られるプラズマを糸道基体に接触
させることにより、硬質炭素膜を糸道基体の表面に形成
することができる。(4) Method for forming a hard carbon film A hard carbon film can be formed on the surface of the thread guide base by bringing plasma obtained by exciting a raw material gas into contact with the thread guide base.
(I)原料ガス
前記糸道基体の表面に硬質炭素膜を形成するための原料
ガスとしては、炭素源ガスを使用することができる。(I) Raw material gas A carbon source gas can be used as the raw material gas for forming a hard carbon film on the surface of the thread guide substrate.
炭素源ガス
前記炭素源ガスとしては、各種炭化水素、含酸素化合物
、含窒素化合物等のガスを使用することができる。Carbon Source Gas As the carbon source gas, gases such as various hydrocarbons, oxygen-containing compounds, nitrogen-containing compounds, etc. can be used.
炭化水素化合物としては、例えばメタン、エタン、プロ
パン、ブタン等のパラフィン系炭化水素:エチレン、プ
ロピレン、ブチレン等のオレフィン系炭化水素;アセチ
レン、アリレン等のアセチレン系炭化水素:ブタジェン
等のジオレフィン系炭化水素二ジクロプロパン、シクロ
ブタン、シクロペンタン、シクロヘキサン等の脂環式炭
化水素二ジクロブタジェン、ベンゼン、トルエン、キシ
レン、ナフタレン等の芳香族炭化水素を挙げることがで
きる。Examples of hydrocarbon compounds include paraffinic hydrocarbons such as methane, ethane, propane, and butane; olefinic hydrocarbons such as ethylene, propylene, and butylene; acetylenic hydrocarbons such as acetylene and arylene; diolefinic hydrocarbons such as butadiene; Examples include hydrogen, didichloropropane, alicyclic hydrocarbons such as cyclobutane, cyclopentane, and cyclohexane, dichlorobutadiene, and aromatic hydrocarbons such as benzene, toluene, xylene, and naphthalene.
含酸素化合物としては、例えばアセトン、ジエチルケト
ン、ペンツフェノン等のケトン類:メタノール、エタノ
ール、プロパツール、ブタノール等のアルコール類;メ
チルエーテル、エチルエーテル、メチルエチルエーテル
、メチルプロピルエーテル、フェノールエーテル、ジオ
キサン等のエーテル類:ホルムアルデヒド、アセトアル
デヒド、ベンズアルデヒド等のアルデヒド類:酢酸、プ
ロピオン酸、コハク酸等の有機酸類:酢酸メチル、酢酸
エチル等の酸エステル類;エチレングリコール、ジエチ
レングリコール等の二価アルコル類−一酸化炭素、二酸
化炭素等を挙げることができる。Examples of oxygen-containing compounds include ketones such as acetone, diethyl ketone, and pentuphenone; alcohols such as methanol, ethanol, propatool, and butanol; methyl ether, ethyl ether, methyl ethyl ether, methyl propyl ether, phenol ether, dioxane, etc. Ethers: Aldehydes such as formaldehyde, acetaldehyde, and benzaldehyde; Organic acids such as acetic acid, propionic acid, and succinic acid; Acid esters such as methyl acetate and ethyl acetate; Dihydric alcohols such as ethylene glycol and diethylene glycol - monoxide Examples include carbon and carbon dioxide.
含窒素化合物としては1例えばトリメチルアミン、トリ
エチルアミンなどのアミン類等を挙げることができる。Examples of nitrogen-containing compounds include amines such as trimethylamine and triethylamine.
また、炭素源として、中休ではないが、消防法に規定さ
れる第4類危険物;ガソリンなどの第1石油類、ケロシ
ン、テレピン油、しょう脳油、松根油などの第2石油類
1重油などの第3石油類、ギヤー油、シリンダー油など
の第4石油類などをも使用することができる。また前記
各種の炭素化合物を混合して使用することもできる。In addition, as a carbon source, although it is not suspended, it is classified as Class 4 dangerous substances stipulated in the Fire Service Act; Class 1 petroleum such as gasoline, and Class 2 petroleum 1 such as kerosene, turpentine, ginger oil, and pine oil. Tertiary petroleum oils such as heavy oil, quaternary petroleum oils such as gear oil, cylinder oil, etc. can also be used. It is also possible to use a mixture of the various carbon compounds mentioned above.
これらの炭素源の中でも、常温で気体または蒸気圧の高
いメタン、エタン、プロパン等のパラフィン系t& 化
水素等、アセトン、ベンゾフェノンなどのケトン類、メ
タノール、エタノール等のアルコール類、−酸化炭素、
二酸化炭素ガス等の含酸素化合物等が好ましい。Among these carbon sources, paraffinic t&hydrogen oxides such as methane, ethane, and propane, which are gases or have high vapor pressure at room temperature, ketones such as acetone and benzophenone, alcohols such as methanol and ethanol, carbon oxides,
Oxygen-containing compounds such as carbon dioxide gas are preferred.
なお、原料ガスには、炭素源ガスのほかに水素ガス、水
蒸気、酸素ガス等を含有せしめてもよい。Note that the raw material gas may contain hydrogen gas, water vapor, oxygen gas, etc. in addition to the carbon source gas.
これらのガスと炭素源ガスとを組合わせた原料ガスを使
用すると、ダイヤモンドの含有率の高い硬質炭i[を高
速に形成せしめることができる。By using a raw material gas that is a combination of these gases and a carbon source gas, hard coal i[ with a high diamond content can be formed at high speed.
前記原料ガス中の前記水素ガスの濃度は、前記&J源ガ
スに対してO11〜93.9モル%である。The concentration of the hydrogen gas in the source gas is O11 to 93.9 mol% relative to the &J source gas.
前記原料ガス中の前記水蒸気の濃度は、前記原料ガスに
対して0.05〜10モル%である。The concentration of the water vapor in the raw material gas is 0.05 to 10 mol% with respect to the raw material gas.
前記原料ガス中の前記酸素ガスの濃度は、前記原料ガス
に対して0,01〜1モル%である。The concentration of the oxygen gas in the raw material gas is 0.01 to 1 mol% relative to the raw material gas.
前記原料ガスには、不活性ガスを混入させても良い、不
活性ガスは炭素源ガスのキャリヤーガスとして用いるこ
とができる。An inert gas may be mixed in the raw material gas, and the inert gas can be used as a carrier gas for the carbon source gas.
この不活性ガスとしては、たとえば窒素ガス。This inert gas is, for example, nitrogen gas.
ヘリウムガス、アルゴンガス、ネオンガス、キセノンガ
スなどが挙げられる。Examples include helium gas, argon gas, neon gas, and xenon gas.
(II)励起手段
炭素源ガスの励起手段としては、硬質炭素膜の合成に従
来より慣用されている各種の方法の中から任意の方法を
用いることができる。(II) Excitation Means As a means for exciting the carbon source gas, any method can be used from among the various methods conventionally used for synthesizing hard carbon films.
具体的には、たとえば直流プラズマCVD法、高周波プ
ラズマCVD法、マイクロ波プラズマCVD法、光CV
D法などの各種プラズマCVD法、熱フイラメント法、
イオンビーム蒸着法、スパッタリング法などが挙げられ
る。これらの中で好ましいものは前記各種のプラズマC
VD法である。Specifically, for example, DC plasma CVD method, high frequency plasma CVD method, microwave plasma CVD method, optical CVD method, etc.
Various plasma CVD methods such as D method, hot filament method,
Examples include ion beam evaporation method and sputtering method. Among these, preferred are the various plasma C
This is the VD method.
なお、前記炭J源ガスをプラズマ分解する場合のプラズ
マ出力は1通常、0.05Kw以上である。Note that the plasma output when plasma decomposing the Coal J source gas is usually 0.05 Kw or more.
プラズマ出力がO,05に1未満であると、プラズマが
充分に発生しないことがある。If the plasma output is less than 1 in O.05, sufficient plasma may not be generated.
励起条件
前記炭素源ガスを励起させるには通常、以下の条件下に
反応を進行させて、硬質炭素質膜を形成する。Excitation Conditions To excite the carbon source gas, a reaction is usually allowed to proceed under the following conditions to form a hard carbonaceous film.
すなわち、糸道基体の表面の温度は、前記気相合成法に
おける炭素源ガスの励起手段、基板の冷却によって異な
るので、−概に決定することはできないが、たとえばプ
ラズマ分解法を用いる場合には1通常、ダイヤモンドの
含有率の高い硬質炭素膜を形成するには、600〜1,
200℃であり、好ましくは650〜1,100℃であ
り、ダイヤモンド状炭素の含有率の高い硬質炭素膜を形
成するには、通常、室温〜650℃であり、好ましくは
室温〜600℃である。That is, the temperature of the surface of the thread guide substrate varies depending on the excitation means of the carbon source gas in the vapor phase synthesis method and the cooling of the substrate. 1 Normally, to form a hard carbon film with a high diamond content, 600 to 1,
200°C, preferably 650 to 1,100°C, and to form a hard carbon film with a high content of diamond-like carbon, the temperature is usually room temperature to 650°C, preferably room temperature to 600°C. .
反応圧力は、ダイヤモンドの含有率の高い硬質J&J膜
を形成する場合1通常、10−5〜+03 torr。The reaction pressure is usually 10-5 to +03 torr when forming a hard J&J film with a high diamond content.
好ましくは1O−3〜!(1) torrであり、ダ
イヤモンド状炭素の含有率の高い硬質炭素膜を形成する
場合、通常、10−6〜780 tarr、好ましくは
1叶4〜10tarrである。Preferably 1O-3~! (1) torr, and when forming a hard carbon film with a high content of diamond-like carbon, it is usually 10 -6 to 780 tarr, preferably 4 to 10 tarr.
なお、反応圧力が1O−6torrよりも低い場合には
、硬質炭素膜が析出しなくなったりする場合がある。一
方、10’ torrより高くしてもそれに相当する
効果は得られない。Note that if the reaction pressure is lower than 10-6 torr, the hard carbon film may not be deposited. On the other hand, even if it is made higher than 10' torr, a corresponding effect cannot be obtained.
前記温度範囲または前記反応圧力範囲で、糸道基体の表
面の温度または反応圧力を適宜に選択することにより、
硬質炭素質膜に含有するダイヤモンドとダイヤモンド状
炭素との含有率を選択することもできる。By appropriately selecting the temperature or reaction pressure of the surface of the thread guide substrate in the temperature range or the reaction pressure range,
It is also possible to select the content ratio of diamond and diamond-like carbon contained in the hard carbonaceous film.
反応時間は、硬質炭素質膜の厚さが前記厚さとなるよう
に硬質炭質素膜の形成速度に応じて適宜に設定すること
ができる。The reaction time can be appropriately set according to the formation rate of the hard carbon film so that the hard carbon film has the above thickness.
なお、前記硬質炭素質膜は、糸道基体上に、前記中間層
を介して形成してもよいので、以下に前記中間層の形成
方法を説明する。Note that the hard carbonaceous membrane may be formed on the thread guide substrate via the intermediate layer, so a method for forming the intermediate layer will be described below.
(5)中間層の形成方法
前記中間層は、通常、前記金属、前記金属の炭化物、前
記金属のケイ化物、前記炭素源ガス、前記ケイ素等を励
起して得られたガスを糸道基体表面に接触させて形成す
ることができる。(5) Method for Forming Intermediate Layer The intermediate layer is usually formed by applying a gas obtained by exciting the metal, carbide of the metal, silicide of the metal, carbon source gas, silicon, etc. to the surface of the thread guide substrate. can be formed by contacting with.
前記励起手段としては、前記硬質炭素質膜を形成する際
に採用した励起手段と同様の方法を採用することができ
る。As the excitation means, the same method as the excitation means employed when forming the hard carbonaceous film can be adopted.
また、前記中間層は、蒸着法、イオンブレーティング法
1反応性スパッタリング法等により糸道基体表面に形成
することもできる。Further, the intermediate layer can also be formed on the surface of the thread guide substrate by a vapor deposition method, an ion blating method, a reactive sputtering method, or the like.
前記中間層を形成するに際して、糸道基体の表面温度と
しては、前記手段、前記中間層の反応性および中間層の
融点によって条件範囲が異なるので、−概に決定するこ
とはできないが1通常、常温〜1,000℃であり、好
ましくは、常温〜900℃である。When forming the intermediate layer, the surface temperature of the yarn guide substrate cannot be generally determined because the condition range varies depending on the means, the reactivity of the intermediate layer, and the melting point of the intermediate layer; The temperature is from normal temperature to 1,000°C, preferably from normal temperature to 900°C.
反応圧力としては、通常10−7〜10−’torrで
あり、好ましくは、10−6〜1O−2torrである
。The reaction pressure is usually 10-7 to 10-' torr, preferably 10-6 to 1 O-2 torr.
析出速度としては、前記反応条件の範囲内で適宜に設定
することにより一概に決定することはできないが1通常
は1〜IQOA/秒である。Although the precipitation rate cannot be determined unconditionally by appropriately setting the reaction conditions within the range of the above-mentioned reaction conditions, it is usually 1 to IQOA/sec.
このような条件下で前記糸道基体」−に前記の厚さにな
るように前記中間層を形成する。Under such conditions, the intermediate layer is formed on the thread guide substrate to have the thickness as described above.
このように形成された中間層−Lに前記硬質炭素質膜を
形成する方法としては、前記の外道基体上に直接、硬質
)^素質)摸を形成する方法と同様の方法を好適に採用
することができる。As a method for forming the hard carbonaceous film on the intermediate layer-L formed in this way, a method similar to the method for forming the hard carbonaceous film directly on the external substrate is preferably adopted. be able to.
なお、前記硬質炭素質膜または前記中間層を前記糸道基
体上に形成するに先ケち、糸道基体に表面処理を行うの
が好ましい。Note that, before forming the hard carbonaceous film or the intermediate layer on the thread guide base, it is preferable to subject the thread guide base to a surface treatment.
前記表面処理は、前記硬?を炭素質膜または前記中間層
と前記糸道基体との密着性を高める作用を41する。Is the surface treatment hard? has the effect of increasing the adhesion between the carbonaceous membrane or the intermediate layer and the thread guide substrate.
前記表面処理としては、たとえば、ダイヤモンドスラリ
ーを用いて前記糸道基体の表面を研磨する方法、有機溶
剤で前記糸道基体の表面を洗浄する方法、任意の溶剤を
用いて超rY波洗浄する方法または前記方法を適宜に組
合せて採用する方法茅が挙げられる。The surface treatment includes, for example, a method of polishing the surface of the thread guide base using a diamond slurry, a method of cleaning the surface of the thread guide base with an organic solvent, and a method of ultra-rY wave cleaning using an arbitrary solvent. Alternatively, there may be mentioned a method of employing an appropriate combination of the above methods.
なお、これらの中でも、ダイヤモンドスラリーを用いて
前記糸道基体の表面を研磨する方法と超音波洗浄する方
法との組合せ、有機溶剤で前記糸道基体の表面を洗浄す
る方法と超音波洗浄する方法との組合せが好ましい。Among these, a combination of a method of polishing the surface of the thread guide base using diamond slurry and an ultrasonic cleaning method, a method of cleaning the surface of the thread guide base with an organic solvent and a method of ultrasonic cleaning. A combination with is preferred.
また、前記糸道基体上に前記硬質炭素質膜を。Further, the hard carbonaceous film is provided on the thread guide substrate.
または前記糸道基体上に前記中間層を介して前記硬質炭
素質膜を形成したときに、得られた硬質炭素質膜の表面
に平滑処理を施すこともできる。Alternatively, when the hard carbonaceous membrane is formed on the yarn guide substrate via the intermediate layer, the surface of the obtained hard carbonaceous membrane may be smoothed.
前記平滑処理の方法としては、公知の方法、たとえば硬
質炭素質膜を、水素雰囲気下に水素ラジカルを供給しつ
つ高温に保持した鉄板上で表面研磨を行うモ滑処理法等
を好適に採用することができる。As the smoothing method, a known method such as a smoothing method in which the surface of a hard carbonaceous film is polished on an iron plate maintained at a high temperature while supplying hydrogen radicals in a hydrogen atmosphere is suitably employed. be able to.
このようにして得られた糸道は、耐摩耗性に優れること
から耐用年数が長く、また糸との動摩擦係数が低いこと
から走行する糸を損傷することなく案内する。The yarn path thus obtained has a long service life due to its excellent abrasion resistance, and has a low coefficient of dynamic friction with the yarn, so it guides the running yarn without damaging it.
[実施例]
この発明の糸道について、更に具体的に説明するため以
下にその実施例を挙げる。[Example] In order to more specifically explain the thread path of the present invention, examples are given below.
(実施例1)
糸道人(体としては、第1図に示すように、超硬合金(
11IG−5%Go)製の三角板であって、−角の頂点
から板の中央部まで略U字型の切り込みを設けた案内部
1を有するものを用いた。なお、前記案内部lの前記中
央端部4は、湾曲面に仕上げ、他方の開放端部は、エツ
ジ5に段差を設け、糸を導入し易くしている。(Example 1) Itodojin (the body is made of cemented carbide (as shown in Figure 1)
A triangular plate made of 11IG-5% Go) having a guide portion 1 with a substantially U-shaped cut from the apex of the - corner to the center of the plate was used. The center end 4 of the guide portion 1 is finished with a curved surface, and the other open end is provided with a step at the edge 5 to facilitate the introduction of the yarn.
前記糸道基体は、従来糸道に使用されているものと同様
の材質であり、案内部lを、平均粒径0.5μmのダイ
ヤモンド砥粒を用いて鏡面仕上げされているものである
。The thread guide base is made of the same material as that used in conventional thread guides, and the guide portion 1 is mirror-finished using diamond abrasive grains having an average grain size of 0.5 μm.
前記糸道基体を、ランゲルE液(目止精工[株]製)の
lO倍福釈液(液温50℃)、つぎに純水、そのつぎに
イソプロピルアルコールを順次に用いて、各々3回づつ
の洗浄を行った。The thread guide substrate was treated with Langer E solution (Medome Seiko Co., Ltd.) 10 times diluted solution (liquid temperature 50°C), then with pure water, and then with isopropyl alcohol, three times each. I did one wash at a time.
なお1回あたりの洗浄時間は60秒であり、各々3回の
洗すのうち、各々2回[1の洗浄は超音波処理を併用し
た。Note that the washing time per time was 60 seconds, and out of the three washings, two washings were performed [1 washing was performed in combination with ultrasonic treatment.
このように洗浄を行った前記糸道基体を、反応室内に設
置した後、糸道基体温度300℃1反応室内の圧力10
−’torrの条件下に1周波数13.5811Hzの
高周波電源の出力を600Wに設定するとともに、反応
室内への原料ガスとしてメタンガスと水素ガスとの全量
を101005eに設定した。After installing the thread guide base that has been cleaned in this way in the reaction chamber, the thread guide base temperature is 300°C, the pressure inside the reaction chamber is 10
-'torr, the output of a high frequency power supply with a frequency of 13.5811 Hz was set to 600 W, and the total amount of methane gas and hydrogen gas as raw material gases into the reaction chamber was set to 101005e.
前記メタンガスの濃度は、20容量%であった。The concentration of the methane gas was 20% by volume.
このような条件下で得られた励起ガスを第1図に示す前
記糸道基体の案内部lに接触させることにより前記案内
部1およびその近傍表面に厚さ10ルmの硬質炭素膜3
を形成して、糸道を得た。By bringing the excited gas obtained under these conditions into contact with the guide part 1 of the thread guide base shown in FIG.
was formed and a thread path was obtained.
このようにして得られた糸道につき、耐摩耗性の評価と
J9m係数の測定を行った。The yarn path thus obtained was evaluated for wear resistance and measured for the J9m coefficient.
結果を第1表に示す。The results are shown in Table 1.
なお、耐摩耗性の評価と摩擦係数の測定はF記に示す方
法を採用した。In addition, the method shown in F was adopted for evaluation of wear resistance and measurement of friction coefficient.
耐摩耗性の評価
得られた糸道を第1図に示されるボルト穴2を用いてボ
ルト固定し、生糸を1000m/分の速度で糸道の案内
部を走行せしめ、前記生糸の走行長さあたりの劣化度を
観察することにより評価した。The yarn path for which wear resistance has been evaluated is fixed with bolts using bolt holes 2 shown in FIG. The evaluation was made by observing the degree of deterioration.
なお、第1表の記号の意味は、次のとおりである。The meanings of the symbols in Table 1 are as follows.
生糸の劣化が見られない、・會・11−○生糸にケバ立
ちが見られる。・・φ−Δ生糸が切れる。・争・會・e
e・・・×動摩擦係数の測−1
摩擦係数自動測定機により、荷重を2(Igに設定し、
糸道の案内部1と生糸との動摩擦係数を測定した。No deterioration of the raw silk is observed.・Ai・11-○ Fuzzing is observed on the raw silk. ...φ-Δ raw silk is cut.・Conflict・Meeting・e
e...×Measurement of dynamic friction coefficient -1 Using an automatic friction coefficient measuring machine, set the load to 2 (Ig,
The coefficient of dynamic friction between the guide section 1 of the yarn guide and the raw silk was measured.
(実施例2)
実施例1と同様の糸道基体を用い、その糸道基体に実施
例1と同様に表面処理を施した。(Example 2) Using the same thread guide base as in Example 1, the thread guide base was subjected to surface treatment in the same manner as in Example 1.
ついで、この糸道基体を反応室内に設置した後、糸道基
体温度300℃、反応室内の圧力1O−6jorrの条
件下に、電源の出力を300Wに設定した高周波スパッ
タリング法によりタングステンを励起し、得られたガス
を糸道基体の案内部1およびその近傍表面に接触させて
厚さ0.5 ga、のタングステンからなる中間層を形
成した。Next, after installing this thread guide substrate in a reaction chamber, the tungsten was excited by a high frequency sputtering method with the power supply output set to 300 W under the conditions that the thread guide substrate temperature was 300° C. and the pressure in the reaction chamber was 1 O-6 jorr. The obtained gas was brought into contact with the guide portion 1 of the thread guide base and the surface in its vicinity to form an intermediate layer made of tungsten and having a thickness of 0.5 ga.
スパッタガスとしてはアルゴンガスを用いた。Argon gas was used as the sputtering gas.
中間層の析出速度は、10A/秒であった。The deposition rate of the intermediate layer was 10 A/sec.
このようにして得られた中間層りに、実施例1と同様の
条件で硬質炭素質膜を形成し、糸道を作成した。A hard carbonaceous film was formed on the intermediate layer thus obtained under the same conditions as in Example 1, and a thread path was created.
この糸道につき、実施例工と同様に評価した。This thread path was evaluated in the same manner as in the example construction.
結果を第1表に示す。The results are shown in Table 1.
(実施例3)
糸道基体の材質を超硬合金からアルミナに代えて、硬質
炭J質膜の厚さを5ル〕とした他は、実施例1と同様に
糸道を作成し、実施例1と同様に評価した。(Example 3) A thread guide was created in the same manner as in Example 1, except that the material of the thread guide base was changed from cemented carbide to alumina, and the thickness of the hard carbon J film was changed to 5 mm. Evaluation was made in the same manner as in Example 1.
結果を第1表に示す。The results are shown in Table 1.
(実施例4)
糸道基体の材質を超硬合金からアルミナに代えた他は、
実施例1と同様に糸道を作成し、実施例1と同様に評価
した。(Example 4) The material of the thread guide base was changed from cemented carbide to alumina.
A yarn path was created in the same manner as in Example 1, and evaluated in the same manner as in Example 1.
結果を第1表に示す。The results are shown in Table 1.
(比較例1)
実施例1で用いた糸道基体の案内部に硬質炭素質膜の形
成を行わずに、実施例1と同様に評価した。(Comparative Example 1) Evaluation was carried out in the same manner as in Example 1, without forming a hard carbonaceous film on the guide portion of the thread guide base used in Example 1.
結果を第1表に示す。The results are shown in Table 1.
(比較例2)
実施例3で用いた糸道基体の案内部に硬質炭素質膜の形
成を行わずに、実施例1と同様に評価した。(Comparative Example 2) Evaluation was carried out in the same manner as in Example 1, without forming a hard carbonaceous film on the guide portion of the thread guide base used in Example 3.
結果を第1表に示す。The results are shown in Table 1.
[発明の効果]
この発明の糸道は、第1表の結果に示すように
(1)耐摩耗性に優れるので耐用年数を延長することか
でき、
(2)糸との動摩擦係数が低いので、走行する糸の損傷
を防+hすることができる等の利点を有する糸道を提供
することができる。[Effects of the Invention] As shown in the results in Table 1, the thread guide of this invention (1) has excellent wear resistance, which can extend the service life, and (2) has a low coefficient of dynamic friction with the thread. It is possible to provide a yarn path having advantages such as being able to prevent damage to the traveling yarn.
第1図はこの発明の実施例の糸道の斜視図であり、第2
図、第3図、第4図は糸道基体の斜視図であるい
■・・・案内部、2・・・ボルト穴、
3・・・硬質R素+fj、l漠、4・・・中央端部5・
・・エツジFIG. 1 is a perspective view of a thread path in an embodiment of the present invention, and FIG.
Figures 3 and 4 are perspective views of the yarn guide base. End 5・
・・Etsuji
Claims (1)
特徴とする糸道。(1) A thread guide characterized by forming a hard carbonaceous film on a thread guide base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25439388A JPH02100969A (en) | 1988-10-07 | 1988-10-07 | Thread guide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25439388A JPH02100969A (en) | 1988-10-07 | 1988-10-07 | Thread guide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02100969A true JPH02100969A (en) | 1990-04-12 |
Family
ID=17264355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25439388A Pending JPH02100969A (en) | 1988-10-07 | 1988-10-07 | Thread guide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02100969A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0550752A4 (en) * | 1990-09-28 | 1994-01-26 | Citizen Watch Co. Ltd. | |
EP0599286A1 (en) * | 1992-11-25 | 1994-06-01 | Spinnstofffabrik Zehlendorf Ag | Yarn guiding component with an improved outer surface and method for manufacturing the same |
EP0631961A1 (en) * | 1993-06-19 | 1995-01-04 | Hoechst Aktiengesellschaft | Yarn guiding component with an improved outer surface |
US5511587A (en) * | 1990-09-28 | 1996-04-30 | Citizen Watch Co., Ltd. | Wear-resistant reed for a high-speed loom |
US6023025A (en) * | 1996-05-24 | 2000-02-08 | Nissin Electric Co., Ltd. | Electric wire and manufacturing method thereof |
JP2020019651A (en) * | 2018-08-03 | 2020-02-06 | 株式会社大阪クリップ | Cord reel |
-
1988
- 1988-10-07 JP JP25439388A patent/JPH02100969A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0550752A4 (en) * | 1990-09-28 | 1994-01-26 | Citizen Watch Co. Ltd. | |
US5511587A (en) * | 1990-09-28 | 1996-04-30 | Citizen Watch Co., Ltd. | Wear-resistant reed for a high-speed loom |
EP0599286A1 (en) * | 1992-11-25 | 1994-06-01 | Spinnstofffabrik Zehlendorf Ag | Yarn guiding component with an improved outer surface and method for manufacturing the same |
EP0631961A1 (en) * | 1993-06-19 | 1995-01-04 | Hoechst Aktiengesellschaft | Yarn guiding component with an improved outer surface |
US6023025A (en) * | 1996-05-24 | 2000-02-08 | Nissin Electric Co., Ltd. | Electric wire and manufacturing method thereof |
JP2020019651A (en) * | 2018-08-03 | 2020-02-06 | 株式会社大阪クリップ | Cord reel |
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