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JPH02100353A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH02100353A
JPH02100353A JP25423488A JP25423488A JPH02100353A JP H02100353 A JPH02100353 A JP H02100353A JP 25423488 A JP25423488 A JP 25423488A JP 25423488 A JP25423488 A JP 25423488A JP H02100353 A JPH02100353 A JP H02100353A
Authority
JP
Japan
Prior art keywords
external connection
area
wiring board
pins
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25423488A
Other languages
Japanese (ja)
Inventor
Chikayuki Kato
加藤 周幸
Seiichi Nishino
西野 誠一
Jiro Yamada
次郎 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NEC Engineering Ltd
Original Assignee
NEC Corp
NEC Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, NEC Engineering Ltd filed Critical NEC Corp
Priority to JP25423488A priority Critical patent/JPH02100353A/en
Publication of JPH02100353A publication Critical patent/JPH02100353A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make a device smaller and light by increasing the ratio accounting for the area of a die pad to the surface of a wiring board with the foregoing area kept constant and then, disposing input/output pads for external connection that are about the same number as those which are obtained before the ratio accounting for the above area to the surface of the wiring board increases in such a way that they are arrayed in a staggered lattice or in a parallel lattice. CONSTITUTION:This device makes the ratio accounting for the area of a die pad to the surface of a wiring board increase with the foregoing area kept constant. Input/output pads for external connection that are around the same number as those which are obtained before the ratio accounting for the above area to the surface of the wiring board increases are disposed in such a way that they are arrayed in a staggered lattice or in a parallel lattice. For example, in addition to forming a wiring circuit on the surface of an insulating substrate 1, in an external connection part, the input/output pads 2 for external connection allow 72 pins to be formed into three columns by a solder DIP system and the like. In other words, in the case where respective pins formed into three columns are put in the same file, each pitch becomes 2.54mm. As an intermediate column is slid at a distance of 1.27mm, pins are formed, on the whole, into a staggered lattice and then its staggered direction is made up so that are 1.27X2mm pitches. A package is thus made smaller and lighter than that having the pitches 2.54mm.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にピン・グリッド・アレ
イ型パッケージを用いた半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device using a pin grid array type package.

〔従来の技術〕[Conventional technology]

従来、この種の半導体装置は、その−・例を第3図の従
来の半導体装置の正面図(A)、底面図(D)に示すよ
うに、配線回路が形成された絶縁基板]に、外部接続用
入出力ピン3が2.54n+mピッチで平行格子状に配
列されて植立され、実装する場合には、実装基板のスル
ーホールにこのピンを挿入することによって行うもの、
又は、図示していないが、他の例として外部接続用入出
力ピン3の代りに半田等の金属を盛り上げてパッドとし
、実装する場合には、実装基板の配線パター ン」二に
直接接続させるもの等があるが、いずれにしてもピン又
はパッドのピッチが2.54mmの構造であった。
Conventionally, this type of semiconductor device has an insulating substrate on which a wiring circuit is formed, as shown in FIG. 3, a front view (A) and a bottom view (D) of a conventional semiconductor device. Input/output pins 3 for external connection are arranged and planted in a parallel grid at a pitch of 2.54n+m, and when mounting is performed, the pins are inserted into through holes of the mounting board.
Alternatively, although not shown, as another example, instead of the input/output pin 3 for external connection, metal such as solder may be piled up to form a pad, and when mounting, connect it directly to the wiring pattern 2 of the mounting board. However, in any case, the pitch of the pins or pads was 2.54 mm.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置は、外部接続部のピン又はパ
ッドのピッチが2.54mmであるため、280ビン、
360ピン等と多ピンパツケージになるにつれて絶縁基
板が大きくなり、重量が増し、コス)・も非常に高価に
なる。特に外部接続部がパッド構造のものは、基板自体
の水平精度も悪くなり、実装の際、パッドが実装基板か
ら浮き上って実装が困難になるという欠点があった。
In the conventional semiconductor device described above, the pitch of the pins or pads of the external connection part is 2.54 mm, so there are 280 bins,
As the number of pins becomes larger, such as 360 pins, the insulating substrate becomes larger, heavier, and extremely expensive. Particularly, in the case where the external connection part has a pad structure, the horizontal precision of the board itself is poor, and the pads rise up from the mounting board during mounting, making mounting difficult.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、絶縁基板表面に配線回路を形成し中央部には
半導体チップ搭載部を形成した配線基板を有し、前記配
線回路と電気的に接続された複数の外部接続用入出力パ
ッドを前記配線基板の裏面に設けた半導体装置において
、前記半導体チップ搭載部の面積を一定にしたままこの
搭載部面積の前記配線基板表面に占める割合を増加せし
め、前記外部接続用入出力パッドは前記半導体チップ搭
載部面積の割合が増加する以前とほぼ同数が千鳥格子状
又は平行格子状に配置されている半導体装置である。
The present invention has a wiring board in which a wiring circuit is formed on the surface of the insulating substrate and a semiconductor chip mounting part is formed in the center, and a plurality of external connection input/output pads electrically connected to the wiring circuit. In a semiconductor device provided on the back surface of a wiring board, the area of the semiconductor chip mounting part is kept constant and the ratio of the area of this mounting part to the surface of the wiring board is increased, and the input/output pads for external connection are connected to the semiconductor chip. Almost the same number of semiconductor devices are arranged in a staggered or parallel lattice pattern as before the increase in the proportion of the mounting area.

(実施例〕 次に本発明について図面を参照して説明する。(Example〕 Next, the present invention will be explained with reference to the drawings.

第1図(A)、(B)は本発明の第1の実施例を示し、
図(A)は正面図、図CB)は底面図である。
FIGS. 1A and 1B show a first embodiment of the present invention,
Figure (A) is a front view, and Figure CB) is a bottom view.

絶縁基板1は、ガラスエポキシ、ガラスポリイミド、ガ
ラスBT、セラミック等の絶縁材料からなる。この絶縁
基板1の表面に配線回路を形成すると共に、その中央部
には半導体チップ搭載部となるキャビティを設けて配線
基板とし、この配線基板の裏面には、配線回路と電気的
に接続され千鳥格子状に配列された径が0.9+n+a
程度の外部接続部が設けられ、この外部接続部には、外
部接続用入出力パッド2が半田デイツプ等により3列に
72ビンが設けられている。
The insulating substrate 1 is made of an insulating material such as glass epoxy, glass polyimide, glass BT, or ceramic. A wiring circuit is formed on the surface of this insulating substrate 1, and a cavity is provided in the center to serve as a semiconductor chip mounting part to form a wiring board, and the back side of this wiring board is provided with a staggered pattern that is electrically connected to the wiring circuit. The diameter arranged in a grid is 0.9+n+a
This external connection section has 72 external connection input/output pads 2 arranged in three rows using solder dips or the like.

すなわち、3列とも同列のピッチは2.54mmである
が、中間の列は1.27mmずらして全体として千鳥格
子状になっている。従って、千鳥方向は1.27X(2
w、mピッチになっている。パッド高さは、実装の際、
実装基板と配線基板との間を一定距離あける必要上、確
実性を考慮して少なくとも1關とした。
That is, the pitch between all three rows is 2.54 mm, but the middle row is shifted by 1.27 mm, creating a houndstooth pattern as a whole. Therefore, the staggered direction is 1.27X (2
It has w and m pitches. The pad height is determined by
Since it is necessary to maintain a certain distance between the mounting board and the wiring board, at least one distance is set in consideration of reliability.

又、配線基板に搭載する半導体チップのサイズを今回7
 mg+角程度と想定したため、キャビティの大きさか
らパッド最内列長さが12m++s以上必要となり、最
内列パッドの数は一辺当り6ピンとした。
In addition, the size of the semiconductor chip mounted on the wiring board has been increased to 7.
Since it was assumed that the length of the innermost row of pads was approximately 12 m++s due to the size of the cavity, the number of pads in the innermost row was set to 6 pins per side.

この寸法条件で、従来の2.54mmピッチのピン数と
同程度の、ビン数80本前後のパッケージで比較・した
場合、約30%の絶縁基板面積の縮小になった。
Under these dimensional conditions, when comparing a package with around 80 pins, which is the same as the conventional 2.54 mm pitch pin count, the insulating substrate area was reduced by about 30%.

第2図(^)、(B)は本発明の第2の実施例を示し、
図(A)は正面図、図(B)は底面図である。第1の実
施例と同様、絶縁基板1に外部接続部が設けられている
が、本実施例では、88ピンが1.27++umピッチ
で2列の平行格子状になっている。そこに外部接続用入
出力パッド2を半田デイツプ等によって設けている。但
し、この場合はピッチが狭いために、外部接続部の径は
0.5mm程度とした。
FIGS. 2(^) and (B) show a second embodiment of the present invention,
Figure (A) is a front view, and Figure (B) is a bottom view. Similar to the first embodiment, the insulating substrate 1 is provided with an external connection portion, but in this embodiment, 88 pins are arranged in two parallel grids with a pitch of 1.27++ um. There, an input/output pad 2 for external connection is provided by a solder dip or the like. However, in this case, since the pitch was narrow, the diameter of the external connection portion was set to about 0.5 mm.

本実施例においてもキャビティの大きさは第1の実施例
と同じにし、ピン最内列の一辺の長さを12.7nus
とした。この寸法条件で、従来の2.54mmピッチの
ビン数と同程度の、ビン数80ピン前後のパッケージと
比較した場合、約50%の絶縁基板面積の縮小となった
In this embodiment, the size of the cavity is the same as in the first embodiment, and the length of one side of the innermost row of pins is 12.7 nus.
And so. Under these dimensional conditions, the area of the insulating substrate was reduced by about 50% when compared with a conventional package with a 2.54 mm pitch and about 80 pins, which is the same number of bins.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明に用いるパッケージは従来
の2 、54 amピッチのパッケージと比べ小型、軽
量となり、ひいては本パッケージを使用した製品、すな
わち半導体装置の小型、軽量化に没立つ。
As explained above, the package used in the present invention is smaller and lighter than the conventional 2.54 am pitch package, which in turn contributes to the miniaturization and weight reduction of products using this package, that is, semiconductor devices.

又、絶縁基板自体も大きくならないため、基板のそり等
も発生せず、その結果、実装や組立時の不具合の問題も
なくなり、信頼性の高い半導体装置が得られる。更に、
絶縁基板面積の縮小によって材料費が安くなり、コスト
の低減につながるという効果がある。
Furthermore, since the insulating substrate itself does not become large, warping of the substrate does not occur, and as a result, there are no problems with defects during mounting or assembly, and a highly reliable semiconductor device can be obtained. Furthermore,
The reduction in the area of the insulating substrate reduces material costs, leading to cost reduction.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(A)、(B)は本発明の第1の実施例を示す図
、第2図(A)、(B)は本発明の第2の実施例を示す
図、第3図(A)、(B)は従来の一例を示す図で、そ
れぞれ図(A)は正面図、図(It)は底面図である。 1・・・絶縁基板、2・・・外部接続用入出力パッド、
・・外部接続用入出力ピン。
FIGS. 1(A) and (B) are diagrams showing a first embodiment of the present invention, FIGS. 2(A) and (B) are diagrams showing a second embodiment of the present invention, and FIG. A) and (B) are diagrams showing an example of the conventional technology, with Figure (A) being a front view and Figure (It) being a bottom view. 1... Insulating board, 2... Input/output pad for external connection,
・・Input/output pin for external connection.

Claims (1)

【特許請求の範囲】[Claims] 絶縁基板表面に配線回路を形成し中央部には半導体チッ
プ搭載部を形成した配線基板を有し、前記配線回路と電
気的に接続された複数の外部接続用入出力パッドを前記
配線基板の裏面に設けた半導体装置において、前記半導
体チップ搭載部の面積を一定にしたままこの搭載部面積
の前記配線基板表面に占める割合を増加せしめ、前記外
部接続用入出力パッドは前記半導体チップ搭載部面積の
割合が増加する以前とほぼ同数が千鳥格子状又は平行格
子状に配置されていることを特徴とする半導体装置。
It has a wiring board with a wiring circuit formed on the surface of the insulating substrate and a semiconductor chip mounting part formed in the center, and a plurality of external connection input/output pads electrically connected to the wiring circuit on the back side of the wiring board. In the semiconductor device provided in the semiconductor device, the area of the semiconductor chip mounting portion is kept constant, and the ratio of the area of the mounting portion to the surface of the wiring board is increased, and the external connection input/output pads are arranged so that the area of the semiconductor chip mounting portion is increased. A semiconductor device characterized in that substantially the same number of semiconductor devices as before the ratio increases are arranged in a staggered or parallel lattice pattern.
JP25423488A 1988-10-07 1988-10-07 Semiconductor device Pending JPH02100353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25423488A JPH02100353A (en) 1988-10-07 1988-10-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25423488A JPH02100353A (en) 1988-10-07 1988-10-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH02100353A true JPH02100353A (en) 1990-04-12

Family

ID=17262130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25423488A Pending JPH02100353A (en) 1988-10-07 1988-10-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH02100353A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831234B1 (en) * 1996-06-19 2004-12-14 Ibiden Co., Ltd. Multilayer printed circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831234B1 (en) * 1996-06-19 2004-12-14 Ibiden Co., Ltd. Multilayer printed circuit board

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