JPH01321682A - Etching method for polyimide resin - Google Patents
Etching method for polyimide resinInfo
- Publication number
- JPH01321682A JPH01321682A JP15464888A JP15464888A JPH01321682A JP H01321682 A JPH01321682 A JP H01321682A JP 15464888 A JP15464888 A JP 15464888A JP 15464888 A JP15464888 A JP 15464888A JP H01321682 A JPH01321682 A JP H01321682A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide resin
- mask
- copper film
- etching
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 37
- 239000009719 polyimide resin Substances 0.000 title claims abstract description 37
- 238000005530 etching Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 47
- 239000010949 copper Substances 0.000 claims abstract description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract 10
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 17
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 14
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- FXKZPKBFTQUJBA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium;dihydrate Chemical compound O.O.[Na].[Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O FXKZPKBFTQUJBA-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はフレキシブルプリント配線板の絶縁基板やＴ
Ａ Ｂ （ｔａｐｅ ａｕｔｏｍａｔｅｄ ｂｏｎｄｉ
ｎｇ）テープのキャリアテープとして使用されるポリイ
ミド樹脂のエツチング方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to insulating substrates of flexible printed wiring boards and T
A B (tape automated bondi)
ng) The present invention relates to a method for etching polyimide resin used as a carrier tape for tapes.
［従来の技術］
ポリイミド樹脂は耐熱性、電気絶縁性、耐屈曲性あるい
は耐薬品性等に優れた特性を有しており、フレキシブル
プリント配線板の絶縁基板やＴＡＢテープのキャリアテ
ープとして広く使用されている。これらの製造において
は、フレキシブルプリント配線板にあっては層間の導通
を確保するためにスルースホールを、また、ＴＡＢテー
プにあっては、半導体素子を装着するためのデバイスホ
ールやテープを搬送するためのスプロケットホール等を
形成することが必要である。ポリイミド樹脂にこれらの
孔を形成する方法としては、有機溶剤現像型のフォトレ
ジストを用いてポリイミド樹脂表面にマスクを形成した
後、従来より種々の溶剤を用いてポリイミド樹脂をエツ
チングし、その後前記マスクを剥離し、或いは溶解除去
する方法が採用されている。この際に用いるポリイミド
樹脂用のエツチング液としては、高濃度のアルカリ水溶
液や、ヒドラジンｌ水和物あるいはこれと各種のアミン
類の混合溶液などが知られているが、通常エツチング速
度の速いヒドラジン１永和物、或いは、ヒドラジン１水
和物と各種アミン類の混合溶液が使用される場合が多い
。[Prior Art] Polyimide resin has excellent properties such as heat resistance, electrical insulation, bending resistance, and chemical resistance, and is widely used as an insulating substrate for flexible printed wiring boards and as a carrier tape for TAB tape. ing. In the manufacturing of these, through holes are used to ensure conduction between layers in flexible printed wiring boards, and device holes for mounting semiconductor elements and device holes in TAB tapes are used to transport the tape. It is necessary to form sprocket holes, etc. The method for forming these holes in polyimide resin is to form a mask on the surface of the polyimide resin using an organic solvent-developed photoresist, then etch the polyimide resin using various conventional solvents, and then remove the mask. A method of peeling off or dissolving and removing is adopted. Known etching solutions for polyimide resin used in this case include a highly concentrated alkaline aqueous solution, hydrazine 1 hydrate, or a mixed solution of hydrazine 1 hydrate and various amines, but hydrazine 1 hydrate, which has a high etching rate, is usually used. A permanent hydrate or a mixed solution of hydrazine monohydrate and various amines are often used.
［発明が解決しようとする課題］
有機溶剤現像型のフォトレジストを用いて形成したマス
クとポリイミド樹脂用のエツチング液とを用いた従来の
ポリイミド樹脂のエツチング方法では、該マスクはエツ
チング液に対する耐食性に乏しく、侵食されるという問
題がある。また、該マスクはポリイミド樹脂との密着性
が悪（、マスクとポリイミド樹脂との間にエツチング液
が侵入するばかりでなく、高温度で且つ長時間のエツチ
ングを行なうとマスクがポリイミド樹脂より剥離すると
いう問題点があり、要求される形状の孔を正確且つ安定
的に形成することは困難である。[Problems to be Solved by the Invention] In the conventional polyimide resin etching method using a mask formed using an organic solvent-developed photoresist and an etching solution for polyimide resin, the mask has poor corrosion resistance to the etching solution. There is a problem of scarcity and erosion. In addition, the mask has poor adhesion to the polyimide resin (not only does the etching solution enter between the mask and the polyimide resin, but the mask peels off from the polyimide resin when etching is performed at high temperatures and for a long time. Due to this problem, it is difficult to accurately and stably form holes of a required shape.
一方、上記問題点を解消するものとして印刷型のレジス
トインクの使用が提案されているが、該レジストインク
は永久レジストであり、エツチング終了後のレジストの
剥離、除去が困難であり、用途が限定されるという問題
点がある。On the other hand, the use of printing type resist ink has been proposed as a solution to the above problems, but this resist ink is a permanent resist, and it is difficult to peel or remove the resist after etching, which limits its use. There is a problem with this.
［課題を解決するための手段］
本発明者らはポリイミド樹脂の表面上に銅被膜を形成し
、該銅被膜を用いてマスクを形成し、ポリイミド樹脂を
エツチングすれば、該マスクがエツチング液に侵される
ことなく、また、マスクとポリイミド樹脂との間にエツ
チング液が侵入することなく、更に、ポリイミド樹脂を
エツチングした後、ポリイミド樹脂に影響を与えること
なく、容易にマスクを溶解して除去することができるこ
とを見出し本発明に至った。[Means for Solving the Problems] The present inventors formed a copper film on the surface of a polyimide resin, formed a mask using the copper film, and etched the polyimide resin. The mask is not damaged, the etching solution does not enter between the mask and the polyimide resin, and after etching the polyimide resin, the mask can be easily dissolved and removed without affecting the polyimide resin. The inventors have discovered that it is possible to do this, leading to the present invention.
すなわち、本発明はポリイミド樹脂表面上に、その膜厚
が約２μｍ以上になるように形成された銅被膜をマスク
材として用いるポリイミド樹脂のエツチング方法である
。That is, the present invention is a method for etching a polyimide resin using as a mask material a copper film formed on the surface of the polyimide resin to a thickness of about 2 μm or more.
［作用］
本発明において、ポリイミド樹脂の表面上に銅被膜を形
成する方法は特に限定するものではなく、無電解銅鍍金
法やスパッタリング法でよく、更に、無電解銅鍍金法や
スパッタリング法と電気銅鍍金法とを併用することも可
能である。[Function] In the present invention, the method of forming a copper film on the surface of the polyimide resin is not particularly limited, and may be an electroless copper plating method or a sputtering method. It is also possible to use the copper plating method in combination.
本発明において、銅被膜の膜厚が薄い場合には銅被膜中
に発生するピンホールをなくすことができず、該ピンホ
ール部よりエツチング液が侵入し、銅被膜とポリイミド
樹脂との剥離を引起こすのでポリイミド樹脂表面に形成
する銅被膜の厚さは約２μｍ以上が必要である。一方、
銅被膜があまり厚くなると、銅被膜をエツチングしてマ
スクを形成する際に時間がかかり、マスクの寸法精度を
低下させるので採用するエツチング条件に応じた膜厚以
上にすることは望ましくない。In the present invention, when the thickness of the copper coating is thin, pinholes generated in the copper coating cannot be eliminated, and the etching solution enters through the pinholes, causing separation between the copper coating and the polyimide resin. Therefore, the thickness of the copper coating formed on the surface of the polyimide resin needs to be about 2 μm or more. on the other hand,
If the copper film becomes too thick, it will take time to form a mask by etching the copper film, and the dimensional accuracy of the mask will decrease, so it is not desirable to make the film thicker than the etching conditions employed.
銅被膜をエツチングしてマスクを形成する方法としては
通常の方法でよ（、例えば、銅被膜上にフォトレジスト
によりパターンを形成し、その後過硫酸アンモニウム水
溶液や、塩化第二鉄水溶液や、塩化第二銅水溶液や、過
酸化水素水と硫酸との混合溶液等を用いてパターン部以
外の銅を溶解し、除去する方法でよい。The method of etching the copper film to form a mask is the usual method (for example, forming a pattern on the copper film with photoresist, then etching it with an aqueous ammonium persulfate solution, an aqueous ferric chloride solution, or a ferric chloride solution). A method of dissolving and removing copper other than the pattern portion using an aqueous copper solution, a mixed solution of hydrogen peroxide and sulfuric acid, or the like may be used.
なお、本発明の方法ではマスクとして銅被膜を使用する
ために、ポリイミド樹脂をエツチングした後にポリイミ
ド樹脂に影響を与えることなくマスクを除去することも
簡単にできる。In addition, since the method of the present invention uses a copper coating as a mask, the mask can be easily removed after etching the polyimide resin without affecting the polyimide resin.
［実施例−１１
ポリイミド樹脂としてフィルムの厚さが５０μｍの表面
処理がされ、片面が防蝕テープによりシールされたカプ
トン（東しデュボン社製）を、硫酸銅五水和物１０ ｇ
／ｌ 、エチレンジアミン四酢酸二ナトリウムニ水和物
３０ ｇ／ｌ、ポリエチレングリコール（平均分子量１
，０００ ） ０．５ ｇ／ｌ、 ２．２−ビピリジル
２０ ｇ／ｌからなるｐＨ１２，５、液温６５゜Ｃの無
電解銅鍍金法に１０分間浸漬し、カプトンの片面上に０
．２〜０．３μｍの銅被膜を形成した。[Example 11 Kapton (manufactured by Toshi Dubon Co., Ltd.), which was surface-treated as a polyimide resin with a film thickness of 50 μm and one side sealed with anti-corrosion tape, was mixed with 10 g of copper sulfate pentahydrate.
/l, ethylenediaminetetraacetic acid disodium dihydrate 30 g/l, polyethylene glycol (average molecular weight 1
,000) 0.5 g/l, 2.2-bipyridyl 20 g/l, pH 12.5, liquid temperature 65°C, electroless copper plating method for 10 minutes.
．． A copper coating of 2 to 0.3 μm was formed.
その後、硫酸銅五水和物Ｚｏｏ ｇ／ｌ、硫酸６０ ｇ
／ｌからなる液温３Ｑ’Ｃの硫酸銅鍍金洛中で、電流密
度２ Ａ／ｄｍ”で７分間電気鍍金を行ないカプトン上
に膜厚２．１μｍの銅被膜を形成した。Then copper sulfate pentahydrate Zoo g/l, sulfuric acid 60 g
Electroplating was carried out for 7 minutes at a current density of 2 A/dm'' in a copper sulfate plating solution containing 3 Q'C of liquid at a liquid temperature of 3 Q'C to form a copper film with a thickness of 2.1 μm on the Kapton.
この銅被膜上にフォトレジスト（アルカリ水溶液現像型
）を５〜７μｍ塗布し、露光し、現像した後、過酸化水
素水と硫酸の混合溶液を用いて銅被膜を溶解し、除去し
、次いでフォトレジストを剥離して、−辺が１０．０
ａｍ及び１．０ｍｍの２個の正方形のカプトンの露出面
をもつ銅被膜のマスクを形成した。A photoresist (alkaline aqueous solution developable type) is coated on this copper film to a thickness of 5 to 7 μm, exposed and developed, and then the copper film is dissolved and removed using a mixed solution of hydrogen peroxide and sulfuric acid. Peel off the resist, - side is 10.0
A copper film mask was formed with two square Kapton exposed surfaces of am and 1.0 mm.
次に、カプトンの露出面に液温６０°Ｃのヒドラジン１
水和物とエチレンジアミンの容量比１：ｌの混合溶液を
エツチング液として４分間噴霧してカプトンのエツチン
グを行なった。エツチング終了後、銅のマスクを５００
ｇ／ｌの塩化第二鉄水溶液で溶解し、除去した。この
結果、−辺が１０゜２ ｍｍ及び１．２ｍｍの正方形の
直線性のよい開口部をもったカプトンを得ることができ
た。また、エツチングの間に銅マスクとカプトンとの剥
離は起きなかった。なお、マスク寸法に対して開口部の
寸法がそれぞれ０．２ｍｍ増加しているのは、エツチン
グの進行がカプトンの厚み方向と共に平面方向にも進行
するためである。Next, apply hydrazine 1 at a liquid temperature of 60°C to the exposed surface of Kapton.
Kapton etching was carried out by spraying a mixed solution of hydrate and ethylenediamine at a volume ratio of 1:1 as an etching solution for 4 minutes. After etching, add 500 copper masks.
It was dissolved in g/l aqueous ferric chloride solution and removed. As a result, it was possible to obtain a Kapton having a square opening with good linearity and negative sides of 10°2 mm and 1.2 mm. Also, no peeling occurred between the copper mask and Kapton during etching. The reason why the dimensions of the openings are increased by 0.2 mm relative to the mask dimensions is that the etching progresses not only in the thickness direction of the Kapton but also in the planar direction.
［実施例−２コ
ポリイミド樹脂としてフィルム厚１２５μｍの表面処理
後のカプトンを用いて、実施例１と同様に処理して銅の
マスクを形成し、カプトンのエツチングを８分間行ない
、つづいて銅のマスクを溶解し、除去した。その結果、
−辺１０．６ｍ＋＋＋および、−辺１．Ｂｙａｍの直線
性のよい正方形の開口部を得た。この間銅のマスクとカ
プトンとの剥離は起きなかった。[Example-2 Using Kapton after surface treatment with a film thickness of 125 μm as a copolyimide resin, a copper mask was formed by processing in the same manner as in Example 1, Kapton was etched for 8 minutes, and then the copper mask was etched for 8 minutes. The mask was dissolved and removed. the result,
-side 10.6m+++ and -side 1. Byam square openings with good linearity were obtained. During this time, no peeling occurred between the copper mask and Kapton.
［比較例］
実施例−１と同様の操作で膜厚１．２μｍの銅被膜を形
成したカプトンを用いて、実施例−１と同様に銅のマス
クを形成し、カプトンのエツチングを行なった。その結
果、エツチング液を噴霧して２分間経過したときに銅の
マスクとカプトンとの剥離が起こった。[Comparative Example] A copper mask was formed in the same manner as in Example-1 using Kapton with a 1.2 μm thick copper film formed thereon by the same operation as in Example-1, and Kapton was etched. As a result, two minutes after spraying the etching solution, the copper mask and Kapton peeled off.
［発明の効果］
本発明の方法によれば、銅被膜はポリイミド樹脂のエツ
チング液に対する耐食性に優れ、高温度で且つ長時間の
エツチングにも適用可能である。[Effects of the Invention] According to the method of the present invention, the copper coating has excellent corrosion resistance against polyimide resin etching solutions, and can be applied to etching at high temperatures and for long periods of time.
また、銅被膜とポリイミド樹脂との間へのエツチング液
の侵入やマスクの剥離は起きず、要求される形状の孔を
安定的に形成することができる。更に、本発明の方法の
マスクは銅であるがゆえにポリイミド樹脂のエツチング
終了後のマスクの剥１ｆｔｍや除去が極めて容易である
。Furthermore, the etching solution does not enter between the copper coating and the polyimide resin, and the mask does not peel off, making it possible to stably form holes of the required shape. Further, since the mask used in the method of the present invention is made of copper, it is extremely easy to peel off the mask by 1 ft. or more after etching the polyimide resin.
特許出願人 住友金属鉱山株式会社Patent applicant: Sumitomo Metal Mining Co., Ltd.
Claims (1)
し、該銅被膜にホトエッチングを施してマスク形状に加
工した後、該銅被膜をマスク材としてエッチングするこ
とを特徴とするポリイミド樹脂のエッチング方法。A method for etching a polyimide resin, which comprises forming a copper film with a thickness of 2 μm or more on the surface of a polyimide resin, processing the copper film into a mask shape by photoetching, and etching the copper film as a mask material. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15464888A JPH01321682A (en) | 1988-06-24 | 1988-06-24 | Etching method for polyimide resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15464888A JPH01321682A (en) | 1988-06-24 | 1988-06-24 | Etching method for polyimide resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01321682A true JPH01321682A (en) | 1989-12-27 |
Family
ID=15588825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15464888A Pending JPH01321682A (en) | 1988-06-24 | 1988-06-24 | Etching method for polyimide resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01321682A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006127721A1 (en) * | 2005-05-26 | 2006-11-30 | 3M Innovative Properties Company | Method for forming via hole in substrate for flexible printed circuit board |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4956174A (en) * | 1972-06-07 | 1974-05-31 | ||
| JPS57143893A (en) * | 1981-02-28 | 1982-09-06 | Dainippon Printing Co Ltd | Method of machining flexible circuit board |
-
1988
- 1988-06-24 JP JP15464888A patent/JPH01321682A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4956174A (en) * | 1972-06-07 | 1974-05-31 | ||
| JPS57143893A (en) * | 1981-02-28 | 1982-09-06 | Dainippon Printing Co Ltd | Method of machining flexible circuit board |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006127721A1 (en) * | 2005-05-26 | 2006-11-30 | 3M Innovative Properties Company | Method for forming via hole in substrate for flexible printed circuit board |
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