JPH01297293A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH01297293A JPH01297293A JP63129328A JP12932888A JPH01297293A JP H01297293 A JPH01297293 A JP H01297293A JP 63129328 A JP63129328 A JP 63129328A JP 12932888 A JP12932888 A JP 12932888A JP H01297293 A JPH01297293 A JP H01297293A
- Authority
- JP
- Japan
- Prior art keywords
- group
- recording medium
- parts
- substituent
- independently represent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 14
- -1 Si Ge Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 11
- 125000001424 substituent group Chemical group 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 8
- 125000005843 halogen group Chemical group 0.000 claims abstract description 6
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 5
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims abstract description 4
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- 125000001624 naphthyl group Chemical group 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 3
- 150000003624 transition metals Chemical class 0.000 claims abstract description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 239000004721 Polyphenylene oxide Chemical group 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 229920000570 polyether Chemical group 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 125000004104 aryloxy group Chemical group 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 abstract description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 9
- 239000000975 dye Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000002825 nitriles Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000005457 ice water Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920005668 polycarbonate resin Polymers 0.000 description 3
- 239000004431 polycarbonate resin Substances 0.000 description 3
- 229920005596 polymer binder Polymers 0.000 description 3
- 239000002491 polymer binding agent Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 125000006226 butoxyethyl group Chemical group 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 125000002603 chloroethyl group Chemical group [H]C([*])([H])C([H])([H])Cl 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 150000002791 naphthoquinones Chemical class 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 1
- 229940010552 ammonium molybdate Drugs 0.000 description 1
- 235000018660 ammonium molybdate Nutrition 0.000 description 1
- 239000011609 ammonium molybdate Substances 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006704 dehydrohalogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- KNBYJRSSFXTESR-UHFFFAOYSA-N naphthalene-2,3-dicarbonitrile Chemical compound C1=CC=C2C=C(C#N)C(C#N)=CC2=C1 KNBYJRSSFXTESR-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- MJKYCJBIICJHRD-UHFFFAOYSA-N pentane-2,4-dione;vanadium Chemical compound [V].CC(=O)CC(C)=O MJKYCJBIICJHRD-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000004592 phthalazinyl group Chemical group C1(=NN=CC2=CC=CC=C12)* 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
- G11B7/248—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes porphines; azaporphines, e.g. phthalocyanines
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
本発明は、半導体レーザーの集束ビームを用いて追記す
ることが可能な光学記録媒体に関するものであり、さら
に詳しくは、コンピューター外部メモリー、画像、音声
などの各種情報の記録に用いられる光記録媒体に関する
。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to an optical recording medium that can be additionally recorded using a focused beam of a semiconductor laser. It relates to optical recording media used for recording various information such as external memory, images, and audio.
(従来の技術) 上記した追記可能な光記録媒体としては、テルル。(Conventional technology) The above-mentioned recordable optical recording medium is tellurium.
テルル合金、ビスマス合金などの低融点金属薄膜の無機
系記録層を有する記録媒体が実用化されはじめている。Recording media having inorganic recording layers made of thin films of low-melting metals such as tellurium alloys and bismuth alloys are beginning to be put into practical use.
しかしながら、これらの記録媒体は、真空蒸着、スパッ
タリングなど真空中での薄膜形成によるため生産性が低
く、さらに記録層の熱伝導率が大きいため記録密度の点
で限界があり、またテルルなどの有毒物質を使用するの
で衛生性の点で問題がある。However, these recording media have low productivity because they rely on thin film formation in a vacuum, such as vacuum evaporation or sputtering.Furthermore, the high thermal conductivity of the recording layer limits the recording density, and they also contain toxic substances such as tellurium. Since substances are used, there is a problem in terms of hygiene.
このような問題点を解決するために、近年、有機系色素
を記録媒体として使用する方法が検討されており2例え
ば、ポリメチン色素(特開昭58−112790号公@
)、ナフトキノン(特開昭58−112793号公報)
、フタロシアニン色素(米国特許第4298975号公
報)、ナフタロシアニン色素(米国特許第449275
0号公報)などに、半導体レーザー発振波長領域に吸収
を有する有機色素を記録層とした記録媒体が提案されて
いる。しかしながら、これまでに提案されている有機色
素を用いた記録媒体では、耐久性1反射率の面で、十分
な特性が得られなかったり、溶剤への溶解性が悪く、経
済的に有利な塗布方式による薄膜形成法が適用できない
という欠点を有していた。In order to solve these problems, in recent years, methods of using organic dyes as recording media have been studied.
), naphthoquinone (Japanese Unexamined Patent Publication No. 112793/1983)
, phthalocyanine dye (US Pat. No. 4,298,975), naphthalocyanine dye (US Pat. No. 4,492,75)
A recording medium having a recording layer made of an organic dye having absorption in the semiconductor laser oscillation wavelength region has been proposed in Japanese Patent Publication No. 0). However, the recording media using organic dyes that have been proposed so far do not have sufficient characteristics in terms of durability and reflectance, or have poor solubility in solvents, making it difficult to apply economically advantageous coatings. This method has the disadvantage that a thin film formation method based on this method cannot be applied.
(発明が解決しようとする課題)
本発明は、従来の有機色素を用いた記録媒体の種々の欠
点を改良し、実用上優れた特性を持ち2さらに経済的に
も有利な光学記録媒体を提供するものである。(Problems to be Solved by the Invention) The present invention improves various drawbacks of conventional recording media using organic dyes, and provides an optical recording medium that has practically excellent characteristics2 and is also economically advantageous. It is something to do.
(課題を解決するための手段)
本発明は、レーザービームなどの高密度エネルギー照射
によって状態変化を生じさせ記録を行なう情報記録媒体
において、基板上に、下記一般式〔I〕で示されるフタ
ロシアニン系化合物の少なくとも一種以上を含有する有
機薄膜層を有する光学記録媒体である。(Means for Solving the Problems) The present invention provides an information recording medium that performs recording by causing a state change by high-density energy irradiation such as a laser beam. It is an optical recording medium having an organic thin film layer containing at least one kind of compound.
〔式中、環A、〜A4は、それぞれ独立に、ベンゼン環
、ナフタレン環を表わす。[In the formula, rings A and ~A4 each independently represent a benzene ring and a naphthalene ring.
MはAl、Ga、In、Si、Ga、Snまたは遷移金
属を表わす。M represents Al, Ga, In, Si, Ga, Sn or a transition metal.
Zは、酸素原子、ハロゲン原子、水酸基、ORs:SR
s 、OS iRb Rt Re 、またはQQ e
R6R7R6を表わす。Z is an oxygen atom, a halogen atom, a hydroxyl group, ORs: SR
s , OS iRb Rt Re , or QQ e
Represents R6R7R6.
Yは、水素原子、酸素原子、ハロゲン原子、水酸基、O
Rs 、SRs 、O3tRb Rt R1、または0
GeRh Rt Rsを表わす。Y is a hydrogen atom, an oxygen atom, a halogen atom, a hydroxyl group, O
Rs, SRs, O3tRb Rt R1, or 0
Represents GeRh Rt Rs.
R8−R4は、それぞれ独立に、置換基を有していても
よい芳香族複素環残基を表わす。R8 to R4 each independently represent an aromatic heterocyclic residue which may have a substituent.
R2は、水素原子、水酸基、置換基を有してもよいアル
キル基、了り−ル基、またはシクロアルキル基を表わす
。R2 represents a hydrogen atom, a hydroxyl group, an alkyl group which may have a substituent, an alkyl group, or a cycloalkyl group.
R6,Rt、RIは、水素原子、水酸基、置換基を有し
てもよいアルキル基、アリール基、シクロアルキル基、
アルコキシ基、了り一ロキシ基、シロキシ基、ゲルマニ
ウムオキシ基、またはポリエーテル基のいずれかを表わ
す。R6, Rt, and RI are a hydrogen atom, a hydroxyl group, an alkyl group that may have a substituent, an aryl group, a cycloalkyl group,
Represents any one of an alkoxy group, a monoloxy group, a siloxy group, a germaniumoxy group, or a polyether group.
pおよびqは、置換基YまたはZの個数を表わし。p and q represent the number of substituents Y or Z.
0または1である。0 or 1.
k、1.m、nは、それぞれ独立に、0〜2の整数を表
わすが、これらが同時にOになることはない。〕R,−
R,とじては、具体的には、ピリジル基。k, 1. m and n each independently represent an integer from 0 to 2, but they are never O at the same time. ]R, -
R, specifically, is a pyridyl group.
ブチルピリジル基、エトキシピリジル基、キノキザリル
基、フタラジニル基、プチルキノキザリル基。Butylpyridyl group, ethoxypyridyl group, quinoxalyl group, phthalazinyl group, butylquinoxalyl group.
ジクロルトリアジニル基、ジメトキシトリアジニル基、
ジブチルアミノトリアジニル基、ジブトキシトリアジニ
ル基、ジヒドロキシエトキシトリアジニル基、ジステア
リルオキシトリアジニル基、ジアニリノトリアジニル基
、ジトルイジノトリアジニル基。dichlorotriazinyl group, dimethoxytriazinyl group,
dibutylaminotriazinyl group, dibutoxytriazinyl group, dihydroxyethoxytriazinyl group, distearyloxytriazinyl group, dianilinotriazinyl group, ditoluidinotriazinyl group.
ジブチルアニリノトリアジニル基、ベンゾチアゾリル基
、クロルベンゾチアゾリル基、ブチルベンゾチアゾリル
基、メトキシベンゾチアゾリル基、カルバゾリル基、ベ
ンゾオキサシリル基、インドリル基。Dibutylanilinotriazinyl group, benzothiazolyl group, chlorobenzothiazolyl group, butylbenzothiazolyl group, methoxybenzothiazolyl group, carbazolyl group, benzoxacylyl group, indolyl group.
ベンゾイミダゾリル基、ベンゾチオフェニル基などがあ
るが、これらに限定されるものではない。Examples include, but are not limited to, a benzimidazolyl group and a benzothiophenyl group.
R7としては、具体的には、メチル基、エチル基。Specifically, R7 is a methyl group or an ethyl group.
プロピル基、ブチル基、ステアリル基、エトキシエチル
基、ヒドロキシエチル基、ブトキシエチル基。Propyl group, butyl group, stearyl group, ethoxyethyl group, hydroxyethyl group, butoxyethyl group.
クロルエチル基、ジエチルアミノエチル基、フェニル基
、ブチルフェニル基、ブトキシフェニル基、シクロヘキ
シル基などがあるが、これらに限定されるものではない
。Examples include, but are not limited to, chloroethyl group, diethylaminoethyl group, phenyl group, butylphenyl group, butoxyphenyl group, and cyclohexyl group.
R,、R?、Reとしては、具体的には、水素原子、水
酸基、メチル基、エチル基、プロピル基、ブチル基、ス
テアリル基、エトキシエチル基、ヒドロキシエチル基、
ブトキシエチル基、クロルエチル基。R,,R? , Re specifically includes a hydrogen atom, a hydroxyl group, a methyl group, an ethyl group, a propyl group, a butyl group, a stearyl group, an ethoxyethyl group, a hydroxyethyl group,
Butoxyethyl group, chloroethyl group.
ジエチルアミノエチル基、フヱニル基、ブチルフェニル
基、ブトキシフェニル基、シクロヘキシル基。Diethylaminoethyl group, phenyl group, butylphenyl group, butoxyphenyl group, cyclohexyl group.
トリメチルシロキシ基、トリフェニルゲルマニウムオキ
シ基、ポリオキシエチレン基、ブトキシポリオキシエチ
レン基などがあるが、これらに限定されるものではない
。Examples include, but are not limited to, a trimethylsiloxy group, a triphenylgermaniumoxy group, a polyoxyethylene group, and a butoxypolyoxyethylene group.
−a式〔I〕で示される化合物は1例えば下記−般式t
n)、 (III)、または(IV)一般式(II)
H7J
一般式(III) HN
占
(式中+ A+−a + R+−4+ およびに、R
,m、nは。-a The compound represented by formula [I] is 1, for example, the following - general formula t
n), (III), or (IV) general formula (II)
H7J General formula (III) HN (in the formula + A+-a + R+-4+ and, R
, m, n are.
一般弐N)における意味と同じ意味を有する。〕で示さ
れるインドリン化合物、ニトリル化合物、または酸無水
物と、金属化合物とから2通常の有機溶剤の存在下また
は不存在下に加熱することによって容易に製造すること
ができる。一般式(IV)で示される酸無水物を原料と
する場合には、アンモニアガスまたは尿素が用いられる
。また、モリブデン酸アンモニウム、トリブチルアミン
、シクロヘキシルアミン、ジアザビシクロウンデセンな
どの触媒を用いて製造した方が好ましい場合もある。It has the same meaning as in General 2N). It can be easily produced by heating an indoline compound, nitrile compound, or acid anhydride represented by the following formula and a metal compound in the presence or absence of a common organic solvent. When the acid anhydride represented by general formula (IV) is used as a raw material, ammonia gas or urea is used. In some cases, it may be preferable to use a catalyst such as ammonium molybdate, tributylamine, cyclohexylamine, or diazabicycloundecene.
−C式〔I〕で示される化合物のうち、中心金属に置換
基を有するものは1文献M、B、にenney et、
al、:J、 Am、 CheIIl、 Soc、、
106.7404〜7410 (1984)を参考にし
て製造することができる。-C Among the compounds represented by formula [I], those having a substituent on the central metal are described in Reference 1 M, B, enney et.
al, :J, Am, CheIIl, Soc,,
106.7404-7410 (1984).
また、一般式〔I〕で示される化合物は、モノないしテ
トラアミノフタロシアニンまたはナフタロシアニンを中
間体として合成した後、この中間体と。Further, the compound represented by the general formula [I] is synthesized using mono- to tetraaminophthalocyanine or naphthalocyanine as an intermediate, and then synthesized with this intermediate.
活性なハロゲンを有する芳香族複素環化合物との脱ハロ
ゲン化水素反応によって製造することもできる。It can also be produced by dehydrohalogenation reaction with an aromatic heterocyclic compound having an active halogen.
本発明において用いられる基板としては、信号の書き込
みや読み出しを行なうための光の透過率が。The substrate used in the present invention has a light transmittance for writing and reading signals.
好ましくは85%以上であり、かつ光学異方性の小さい
ものが望ましい。例えば、ガラス、またはアクリル樹脂
、ポリカーボネート樹脂、ポリエステル樹脂、ポリアミ
ド樹脂、塩化ビニル系樹脂、酢酸ビニル系樹脂、ポリス
チレン系樹脂、ポリオレフィン樹脂(ポリ−4−メチル
ペンテンなど)、ポリエーテルスルホン樹脂などの熱可
塑性樹脂やエポキシ樹脂。Preferably it is 85% or more, and it is desirable that the optical anisotropy is small. For example, thermal Plastic resin or epoxy resin.
アリル樹脂などの熱硬化樹脂を用いた基板があげられる
。これらの中で、成形のしやすさ、案内溝やアドレス信
号などの付与のしやすさなどから前記した熱可塑性樹脂
が好ましく、さらに光学特性や機械的特性からアクリル
樹脂やポリカーボネート樹脂が特に望ましい。これらの
基板の厚さは、特に制限がなく、板状でもフィルム状で
もよい。また、その形状は2円形やカード状でもよく、
その大きさには特に制限はない。Examples include substrates using thermosetting resins such as allyl resins. Among these, the above-mentioned thermoplastic resins are preferred because of their ease of molding and ease of providing guide grooves, address signals, etc., and acrylic resins and polycarbonate resins are particularly preferred from their optical and mechanical properties. The thickness of these substrates is not particularly limited and may be plate-like or film-like. In addition, the shape may be two circles or a card shape,
There is no particular limit to its size.
また本発明における基板には、記録および読み出しの際
の位置制御のための案内溝やアドレス信号や各種マーク
などのプリフォーマット用の凹凸を通常有しているが、
これらの凹凸は前記したような熱可塑性樹脂を成形(射
出、圧縮など)する際にスタンパ−などを用いて付与す
るのが、好ましい。Further, the substrate in the present invention usually has guide grooves for position control during recording and reading, and unevenness for preformatting such as address signals and various marks.
These irregularities are preferably provided using a stamper or the like when molding (injection, compression, etc.) the thermoplastic resin as described above.
本発明の光学記録媒体において、フタロシアニン系化合
物を含有する記録層を基板上に定着するには。In the optical recording medium of the present invention, a recording layer containing a phthalocyanine compound is fixed on a substrate.
例えば真空蒸着法、スパッタリング法、イオンプレート
法およびLB法(ラングミュアブロジェット法)などの
方法で薄膜化できるが、これらの方法は操作が煩雑であ
り、かつ生産性の点で劣るので、いわゆる塗布による方
法が最も好ましい。塗布法によって記録層を形成する場
合には1本発明におけるフタロシアニン系化合物を、ア
ルコール類、ケトン類、アミド類、スルホキシド類、エ
ーテル類、エステル類。For example, thin films can be made using methods such as vacuum evaporation, sputtering, ion plate method, and LB method (Langmuir-Blodgett method), but these methods require complicated operations and are inferior in terms of productivity. The most preferred method is When the recording layer is formed by a coating method, the phthalocyanine compounds used in the present invention are alcohols, ketones, amides, sulfoxides, ethers, and esters.
脂肪族ハロゲン化炭化水素類、芳香族炭化水素類など通
常の有機溶媒に分散または溶解して塗布する。It is applied by dispersing or dissolving it in ordinary organic solvents such as aliphatic halogenated hydrocarbons and aromatic hydrocarbons.
また、この際、必要に応じて、高分子バインダーを加え
てもよい。高分子バインダーとしては、塩化ビニル系樹
脂、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂
、ポリカーボネート樹脂、エポキシ樹脂、メタクリル樹
脂、酢酸ビニル系樹脂、ニトロセルロース、フェノール
樹脂などが熱可塑性樹脂または熱硬化性樹脂を用いるこ
とができる。一般式〔I〕で示されるフタロシアニン系
化合物に対する高分子バインダーの比率は10重量%以
下が好ましい。Moreover, at this time, a polymer binder may be added as necessary. Examples of polymer binders include vinyl chloride resins, acrylic resins, polyester resins, polyamide resins, polycarbonate resins, epoxy resins, methacrylic resins, vinyl acetate resins, nitrocellulose, and phenolic resins, as well as thermoplastic resins or thermosetting resins. Can be used. The ratio of the polymer binder to the phthalocyanine compound represented by the general formula [I] is preferably 10% by weight or less.
また9本発明において、一般式〔I〕で示されるフタロ
シアニン系化合物に、他の色素を混合分散あるいは混合
溶解して使用することもできる。混合して使用できる色
素としては、すでに公知の例えば。Further, in the present invention, other dyes may be mixed and dispersed or mixed and dissolved in the phthalocyanine compound represented by the general formula [I]. Examples of pigments that can be used in combination are already known.
芳香族または不飽和脂肪族ジアミン系金属錯体、芳香族
または不飽和脂肪族ジチオール系金属錯体、フタロシア
ニン系錯体、ナフタロシアニン系錯体、スクアリウム系
色素、ナフトキノン系錯体、アントラキノン系色素やポ
リメチン系色素などがあげられる。Aromatic or unsaturated aliphatic diamine metal complexes, aromatic or unsaturated aliphatic dithiol metal complexes, phthalocyanine complexes, naphthalocyanine complexes, squalium dyes, naphthoquinone complexes, anthraquinone dyes, polymethine dyes, etc. can give.
基板上に形成する一般式〔I〕で示されるフタロシアニ
ン系化合物を含有する記録層は、厚さ10 pm以下、
好ましくは500人〜2μmである。また塗布した後、
クロロホルム、テトラヒドロフラン。The recording layer containing the phthalocyanine compound represented by the general formula [I] formed on the substrate has a thickness of 10 pm or less,
Preferably it is 500 to 2 μm. After applying again,
Chloroform, tetrahydrofuran.
トルエンなどの有機溶媒の蒸気にさらすことによって、
薄膜の吸収波長が長波長にシフトし、半導体レーザーの
発振波長域の光に対する感度を著しく向上させることが
できる場合もある。By exposure to vapors of organic solvents such as toluene,
In some cases, the absorption wavelength of the thin film shifts to longer wavelengths, and the sensitivity to light in the oscillation wavelength range of the semiconductor laser can be significantly improved.
また、これらの記録層を保護するために、A12o3.
sio!1sto、SnOなどの無機化合物を蒸着して
保護層を設けてもよい。また、保護層として。In addition, in order to protect these recording layers, A12o3.
sio! A protective layer may be provided by depositing an inorganic compound such as 1sto or SnO. Also as a protective layer.
高分子を塗布してもよい。A polymer may also be applied.
上記のようにして得られた記録媒体への記録は。Recording on the recording medium obtained as above.
基板上に設けた記か層に1μm程度に集束したレーザー
光、好ましくは半導体レーザー光を照射することにより
行なう。レーザー光の照射された部分は。This is carried out by irradiating the above layer provided on the substrate with laser light focused to about 1 μm, preferably semiconductor laser light. The area irradiated with laser light.
レーザーエネルギーの吸収による分解、蒸発、溶融等の
記録層の熱的な状態変化が生じた部分と、生じていない
部分の反射率の差を読み取ることにより行なう。This is done by reading the difference in reflectance between a portion of the recording layer where a thermal state change such as decomposition, evaporation, or melting due to absorption of laser energy has occurred and a portion where no such change has occurred.
光源としては、He−Neレーザー、Arレーザー、半
導体レーザーなどの各種レーザーを用いることができる
が1価格、大きさの点で半導体レーザーが特に好ましい
。半導体レーザーとしては、中心波長830部m、
780r+mおよびそれより短波長のレーザーを使用す
ることができる。As the light source, various lasers such as a He--Ne laser, an Ar laser, and a semiconductor laser can be used, but a semiconductor laser is particularly preferred in terms of cost and size. As a semiconductor laser, the center wavelength is 830 parts m,
Lasers of 780 r+m and shorter wavelengths can be used.
(実施例) 本発明を実施例によりさらに具体的に説明するが。(Example) The present invention will be explained in more detail with reference to Examples.
本発明は、以下の実施例に限定されるものではない。The present invention is not limited to the following examples.
なお2例中9部は重量部を表わす。Note that 9 parts in the two examples represent parts by weight.
合成例1 化合物(a)の合成
n−アミルアルコール20部に、下記の構造を有するニ
トリル2.2部、アセチルアセトンバナジウム0.5部
、およびジアザビシクロウンデセン1.0部を加え、1
30〜135℃で5時間加熱攪拌し、冷却した後、ろ過
し、メタノールで洗浄した後、水洗し。Synthesis Example 1 Synthesis of Compound (a) To 20 parts of n-amyl alcohol, 2.2 parts of nitrile having the following structure, 0.5 part of acetylacetone vanadium, and 1.0 part of diazabicycloundecene were added.
The mixture was heated and stirred at 30 to 135°C for 5 hours, cooled, filtered, washed with methanol, and then washed with water.
乾燥して、化合物(a)1.8部を得た。After drying, 1.8 parts of compound (a) was obtained.
合成例2 化合物(b)の合成
n−アミルアルコール20部に、下記の構造を有するニ
トリル2.6部、塩化第一銅0.3部、およびジアザビ
シクロウンデセン2.0部を加え、130〜135℃で
4時間加熱攪拌し、冷却した後、ろ過し。Synthesis Example 2 Synthesis of Compound (b) To 20 parts of n-amyl alcohol, 2.6 parts of nitrile having the following structure, 0.3 parts of cuprous chloride, and 2.0 parts of diazabicycloundecene were added, The mixture was heated and stirred at 130 to 135°C for 4 hours, cooled, and then filtered.
メタノールで洗浄した後、水洗し、乾燥して、化合物(
b)1.6部を得た。After washing with methanol, washing with water and drying, the compound (
b) 1.6 parts were obtained.
合成例3 化合物(c)の合成
n−アミルアルコール30部に、下記の構造を有するニ
トリル4.2部、塩化第一1i0.3部、およびジアザ
ビシクロウンデセン2.0部を加え、130〜135℃
で5時間加熱攪拌し、冷却した後、ろ過し。Synthesis Example 3 Synthesis of Compound (c) To 30 parts of n-amyl alcohol, 4.2 parts of nitrile having the following structure, 0.3 parts of 1i chloride, and 2.0 parts of diazabicycloundecene were added. ~135℃
The mixture was heated and stirred for 5 hours, cooled, and then filtered.
メタノールで洗浄した後、水洗し、乾燥して、化合物(
c)3.1部を得た。After washing with methanol, washing with water and drying, the compound (
c) 3.1 parts were obtained.
合成例4 化合物(d)の合成
キノリン20部に1合成例1において用いたニトリル1
.1部、2.3−ジシアノナフタレン0.9部、および
四塩化けい素2.0部を加え、180〜200℃で4時
間加熱撹拌し2冷却した後、ろ過し、メタノールで洗浄
し、乾燥し、粗製物を得た。得られた粗製物を濃硫酸1
00部に溶解した後、氷水1000部に注ぎ、得られた
析出物をろ過水洗後、アンモニア水300部に加え、1
時間煮沸した後、ろ過、水洗、乾燥した。得られた乾燥
生成物1.0部を、ピリジン20部およびトリーn−ブ
チルアミン10部に加え、攪拌し、さらにトリメチルク
ロルシラン5.0部を加え、室温で18時間攪拌し2反
応液を得た。Synthesis Example 4 Synthesis of Compound (d) 1 part nitrile used in Synthesis Example 1 to 20 parts quinoline
.. 1 part, 0.9 part of 2,3-dicyanonaphthalene, and 2.0 parts of silicon tetrachloride were added, heated and stirred at 180 to 200°C for 4 hours, cooled for 2 hours, filtered, washed with methanol, and dried. A crude product was obtained. The obtained crude product was dissolved in concentrated sulfuric acid 1
After dissolving in 1,000 parts of ice water, the resulting precipitate was filtered and washed with water, added to 300 parts of aqueous ammonia, and dissolved in 1,000 parts of ice water.
After boiling for an hour, it was filtered, washed with water, and dried. 1.0 parts of the obtained dry product was added to 20 parts of pyridine and 10 parts of tri-n-butylamine and stirred, and further 5.0 parts of trimethylchlorosilane was added and stirred at room temperature for 18 hours to obtain 2 reaction solutions. Ta.
得られた反応液を氷水1000部に注ぎ、析出物をろ別
し、水洗し、メタノール/水(171重量比)混合液で
洗浄し、乾燥し、化合物(d)0.8部が得られた。The obtained reaction solution was poured into 1000 parts of ice water, and the precipitate was filtered off, washed with water, washed with a methanol/water (171 weight ratio) mixed solution, and dried to obtain 0.8 parts of compound (d). Ta.
Ω
(%’z%N(H2C)、niw’、vs(csxbN
(ζシHH〕。Ω (%'z%N(H2C), niw', vs(csxbN
(ζshiHH).
実施例1
パイレックス(Corning Glass Work
s社製、商品名)製基板上にフタロシアニン系化合物(
a)2.5部とクロロホルム97.5部とからなる溶液
を滴下した後、基板を30Orpmの速度で15秒間回
転させ。Example 1 Pyrex (Corning Glass Work
A phthalocyanine compound (manufactured by S company, product name) is coated on a substrate made of
a) After dropping a solution consisting of 2.5 parts and 97.5 parts of chloroform, the substrate was rotated at a speed of 30 Orpm for 15 seconds.
80℃で20分間乾燥させて、記録媒体を得た。A recording medium was obtained by drying at 80° C. for 20 minutes.
得られた記録媒体の記録層は、厚さ900人、最大吸収
波長785nmであり、830ns+の波長の光に対す
る反射率27%であった。The recording layer of the obtained recording medium had a thickness of 900 nm, a maximum absorption wavelength of 785 nm, and a reflectance of 27% for light with a wavelength of 830 ns+.
得られた記録媒体をターンテーブル上に取り付け。Mount the obtained recording medium on the turntable.
ターンテーブルを1800rpmで回転させながら。While rotating the turntable at 1800 rpm.
1.0μmに集束した830nmのレーザーを5mW。5 mW of 830 nm laser focused at 1.0 μm.
8MHzで照射して記録を行なった。Recording was performed with irradiation at 8 MHz.
記録を行なった光学記録媒体表面を走査型電子顕微鏡観
察を行なったところ、鮮明なピットの形成が認められた
。また、この光学記録媒体に830nm。When the surface of the recorded optical recording medium was observed using a scanning electron microscope, the formation of clear pits was observed. Further, this optical recording medium has a wavelength of 830 nm.
0、4 m Wのレーザー光を照射し9反射光の検出を
行なったところ、C/N比が52dBであった。When a laser beam of 0.4 mW was irradiated and nine reflected lights were detected, the C/N ratio was 52 dB.
実施例2
ポリカーボネート樹脂基板上にフタロシアニン系化合物
(b)2.0部とエチルセロソルブ98.0部とからな
る溶液を滴下した後、基板を800 rpmの速度で2
0秒間回転させ、減圧下80℃で30分間乾燥させて、
記録媒体を得た。Example 2 After dropping a solution consisting of 2.0 parts of phthalocyanine compound (b) and 98.0 parts of ethyl cellosolve onto a polycarbonate resin substrate, the substrate was heated at a speed of 800 rpm for 2 hours.
Rotate for 0 seconds and dry at 80°C for 30 minutes under reduced pressure.
Obtained a recording medium.
得られた記録媒体の記録層は、厚さ650人、最大吸収
波長825n+eであり、830nn+の波長の光に対
する反射率29%であった。The recording layer of the obtained recording medium had a thickness of 650 nm, a maximum absorption wavelength of 825n+e, and a reflectance of 29% for light with a wavelength of 830n+.
また、この記録媒体を実施例1と同様に記録を行なった
ところ、記録層表面に鮮明なビット形成が認められ、ま
た、C/N比が51dBであった。Further, when recording was performed on this recording medium in the same manner as in Example 1, clear bit formation was observed on the surface of the recording layer, and the C/N ratio was 51 dB.
実施例3〜11
実施例1と同様の方法により、パイレックス基板上にフ
タロシアニン系化合物(c)〜(j)を塗布し、乾燥さ
せて、記録媒体を得た。Examples 3 to 11 Phthalocyanine compounds (c) to (j) were coated on a Pyrex substrate by the same method as in Example 1 and dried to obtain a recording medium.
得られた記録媒体の記録層の最大吸収波長および830
nn+の波長光に対する反射率、およびこの記録媒体に
実施例1と同様な記録再生を行なった結果を表1に示す
。The maximum absorption wavelength of the recording layer of the obtained recording medium and 830
Table 1 shows the reflectance for light with a wavelength of nn+ and the results of recording and reproducing the same as in Example 1 on this recording medium.
(以下、余白)
表 1
3 c 830nm 292 45dB4
d 810 36 53
5 e 740 23 45
6 f 770 35 52
7 g 785 32 50
8 h 820 33 50
9 i 830 30 48
〔発明の効果〕
本発明の光学記録媒体は、上記のような構成からなり2
化学的、物理的に安定でレーザー光線で高感度で記録再
生できる特徴を有する。(Left below) Table 1 3c 830nm 292 45dB4
d 810 36 53 5 e 740 23 45 6 f 770 35 52 7 g 785 32 50 8 h 820 33 50 9 i 830 30 48 [Effects of the Invention] The optical recording medium of the present invention has the above structure.
It is chemically and physically stable and can be recorded and reproduced with high sensitivity using laser beams.
Claims (1)
ニン系化合物の少なくとも一種以上を含有する有機薄膜
層を有することを特徴とする光学記録媒体。 一般式〔 I 〕 ▲数式、化学式、表等があります▼ 〔式中、環A_1〜A_4は、それぞれ独立に、ベンゼ
ン環、ナフタレン環を表わす。 MはAl、Ga、In、Si、Ge、Snまたは遷移金
属を表わす。 Zは、酸素原子、ハロゲン原子、水酸基、OR_5、S
R_5、OSiR_6R_7R_8、またはOGeR_
6R_7R_8を表わす。 Yは、水素原子、酸素原子、ハロゲン原子、水酸基、O
R_5、SR_5、OSiR_6R_7R_8、または
OGeR_6R_7R_8を表わす。 R_1〜R_4は、それぞれ独立に、置換基を有してい
てもよい芳香族複素環残基を表わす。 R_5は、水素原子、水酸基、置換基を有してもよいア
ルキル基、アリール基、またはシクロアルキル基を表わ
す。 R_6、R_7、R_8は、水素原子、水酸基、置換基
を有してもよいアルキル基、アリール基、シクロアルキ
ル基、アルコキシ基、アリーロキシ基、シロキシ基、ゲ
ルマニウムオキシ基、またはポリエーテル基のいずれか
を表わす。 pおよびqは、置換基YまたはZの個数を表わし、0ま
たは1である。 k、l、m、nは、それぞれ独立に、0〜2の整数を表
わすが、これらが同時に0になることはない。〕[Claims] 1. An optical recording medium characterized by having an organic thin film layer containing at least one phthalocyanine compound represented by the following general formula [I] on a substrate. General Formula [I] ▲ Numerical formulas, chemical formulas, tables, etc. are available▼ [In the formula, rings A_1 to A_4 each independently represent a benzene ring and a naphthalene ring. M represents Al, Ga, In, Si, Ge, Sn or a transition metal. Z is an oxygen atom, a halogen atom, a hydroxyl group, OR_5, S
R_5, OSiR_6R_7R_8, or OGeR_
Represents 6R_7R_8. Y is a hydrogen atom, an oxygen atom, a halogen atom, a hydroxyl group, O
Represents R_5, SR_5, OSiR_6R_7R_8, or OGeR_6R_7R_8. R_1 to R_4 each independently represent an aromatic heterocyclic residue which may have a substituent. R_5 represents a hydrogen atom, a hydroxyl group, an alkyl group that may have a substituent, an aryl group, or a cycloalkyl group. R_6, R_7, and R_8 are any one of a hydrogen atom, a hydroxyl group, an alkyl group that may have a substituent, an aryl group, a cycloalkyl group, an alkoxy group, an aryloxy group, a siloxy group, a germaniumoxy group, or a polyether group represents. p and q represent the number of substituents Y or Z, and are 0 or 1. k, l, m, and n each independently represent an integer of 0 to 2, but they are never 0 at the same time. ]
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63129328A JP2507781B2 (en) | 1988-05-26 | 1988-05-26 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63129328A JP2507781B2 (en) | 1988-05-26 | 1988-05-26 | Optical recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01297293A true JPH01297293A (en) | 1989-11-30 |
JP2507781B2 JP2507781B2 (en) | 1996-06-19 |
Family
ID=15006879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63129328A Expired - Fee Related JP2507781B2 (en) | 1988-05-26 | 1988-05-26 | Optical recording medium |
Country Status (1)
Country | Link |
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JP (1) | JP2507781B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02179791A (en) * | 1988-12-29 | 1990-07-12 | Sony Corp | Optical data recording medium |
WO2006015414A1 (en) * | 2004-08-09 | 2006-02-16 | Silverbrook Research Pty Ltd | Synthetically expedient water-dispersible ir dyes |
JP2007091879A (en) * | 2005-09-29 | 2007-04-12 | Fujifilm Corp | Naphthalocyanine dye and its production method |
WO2010013648A1 (en) * | 2008-07-28 | 2010-02-04 | 日本化薬株式会社 | Water-soluble near-infrared absorbing coloring matters and aqueous inks containing same |
US7699920B2 (en) | 2004-08-09 | 2010-04-20 | Silverbrook Research Pty Ltd | Ink comprising gallium naphthalocyanine dye |
-
1988
- 1988-05-26 JP JP63129328A patent/JP2507781B2/en not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02179791A (en) * | 1988-12-29 | 1990-07-12 | Sony Corp | Optical data recording medium |
US7959724B2 (en) | 2004-08-09 | 2011-06-14 | Silverbrook Research Pty Ltd | Substrate having inkjet ink comprising naphthalocyanine dye disposed thereon |
US7148345B2 (en) | 2004-08-09 | 2006-12-12 | Silverbrook Research Pty Ltd | Synthetically expedient water-dispersible IR dyes having improved lightfastness |
US7699920B2 (en) | 2004-08-09 | 2010-04-20 | Silverbrook Research Pty Ltd | Ink comprising gallium naphthalocyanine dye |
US7750147B2 (en) | 2004-08-09 | 2010-07-06 | Silverbrook Research Pty Ltd | Gallium naphthalocyanine dye |
US7837775B2 (en) | 2004-08-09 | 2010-11-23 | Silverbrook Research Pty Ltd | Inkjet inks for printing coded data comprising naphthalocyanine dyes |
US7892339B2 (en) | 2004-08-09 | 2011-02-22 | Silverbrook Research Pty Ltd | IR-absorbing gallium naphthalocyanine dye |
WO2006015414A1 (en) * | 2004-08-09 | 2006-02-16 | Silverbrook Research Pty Ltd | Synthetically expedient water-dispersible ir dyes |
US7964719B2 (en) | 2004-08-09 | 2011-06-21 | Silverbrook Research Pty Ltd | Inkjet ink comprising gallium naphthalocyanine dye |
JP2007091879A (en) * | 2005-09-29 | 2007-04-12 | Fujifilm Corp | Naphthalocyanine dye and its production method |
WO2010013648A1 (en) * | 2008-07-28 | 2010-02-04 | 日本化薬株式会社 | Water-soluble near-infrared absorbing coloring matters and aqueous inks containing same |
US8404036B2 (en) | 2008-07-28 | 2013-03-26 | Nippon Kayaku Kabushiki Kaisha | Water-soluble near-infrared absorbing coloring matters and aqueous inks containing same |
JP5416115B2 (en) * | 2008-07-28 | 2014-02-12 | 日本化薬株式会社 | Water-soluble near-infrared absorbing dye and water-based ink containing the same |
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