JPH01275762A - Film-forming apparatus - Google Patents

Abstract

PURPOSE:To improve the use efficiency of a gas for film formation and also to increase film forming speed by introducing a gas for film formation into a reaction chamber in which a substrate is placed and also spraying a decomposed product gas formed by means of arc discharge on the substrate. CONSTITUTION:A substrate 5 is placed in a cylindrical reaction chamber 1 consisting of a electric conductor in parallel with the central axis of the chamber 1 and is rotated by means of a motor 6. An SiH4 gas is introduced through gas-introducing parts 2 into the above reaction chamber 1 and a plasma gas prepared by decomposing H2 gas by means of arc discharge is sprayed through gas injection parts 3 on the substrate 5, by which an a-Si film can be efficiently formed on the peripheral surface of the substrate at high speed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a film forming apparatus capable of manufacturing a photoreceptor drum by, for example, arc discharge.

[Prior art and its problems]

Amorphous silicon photoreceptor drums have advantages such as abrasion resistance, heat resistance, photosensitivity, and non-pollution properties, and are rapidly penetrating the market.

When manufacturing this amorphous silicon photoreceptor drum (hereinafter amorphous silicon is abbreviated as a-St), 5
Compound gases of Group 1 Vb elements of the periodic table such as iHa+Si*Hb+CH*+CzHz*GeHa and BgH&,
Dopant gas such as PHs, O□, N2, H,, He
This film-forming gas is introduced into a glow discharge decomposition apparatus to perform vapor phase growth using a carrier gas such as .

However, according to the above-mentioned glow discharge decomposition apparatus, only about 7 to 10χ of the constituent elements of the film-forming gas contribute to film formation, and even after glow discharge decomposition, the remaining elements that do not contribute to film formation remain. Gas is exhausted from the device. Therefore, the utilization efficiency of the film-forming gas is extremely low.

Further, when the above-mentioned glow discharge decomposition apparatus is used, there is also a problem that the film formation rate is low, which reduces manufacturing efficiency and increases manufacturing cost.

[Purpose of the invention]

Therefore, an object of the present invention is to provide a film forming apparatus that solves the above-mentioned problems, increases the efficiency of use of film forming gas, increases the film forming speed, and thereby improves manufacturing efficiency and manufacturing cost. It's about doing.

[Means for solving problems]

In the film forming apparatus of the present invention, a substrate is installed inside a reaction chamber into which a film forming gas is introduced, and a decomposition gas generated by arc discharge of the gas is blown onto the substrate to perform vapor phase growth. It is characterized by

〔Example〕

EMBODIMENT OF THE INVENTION Hereinafter, the film-forming apparatus of this invention will be explained by taking as an example the case where an a-Sii optical drum is manufactured by the embodiment shown in FIGS. 1 and 2.

FIG. 1 shows a film forming apparatus according to the present invention, and FIG. 2 shows a gas ejection section attached to the same apparatus.

In FIG. 1, l is a cylindrical reaction chamber made of a conductor, 1a is its circumferential surface, and a plurality of gas introduction sections 2 and gas ejection sections 3 are formed on the circumference surface 1a. More S
The iH4 gas and the H2 gas are ejected from the gas ejection section 3. Further, when the cylindrical substrate 5 is placed inside the reaction chamber 1, the central axis of the substrate 5 is set to be substantially parallel to the central axis of the reaction chamber 1, and during film formation, the substrate 5 is It is rotated by a motor 6. In addition, 7 is a gas discharge part for discharging the decomposition residual gas of the reaction gas.

FIG. 2 is an enlarged view of the gas ejection part 3, where 8 is a cylindrical insulating external pipe, 9 is a cylindrical conductive internal pipe, and H2 gas flows through the gap between the external pipe 8 and the internal pipe 9. . The external pipe 8 is connected to the circumferential surface 1a, while the distal end 9a of the internal pipe 9 is tapered, and the distal end thereof is connected to the circumferential surface 1a.
It is located approximately at the center in the thickness direction of a. A tapered part 10 is formed on the circumferential surface 1a in correspondence with the tip 9a, and a nozzle is formed by the tip 9a and the tapered part 10, and the H2 gas is ejected as a jet stream through the nozzle.

11 is a DC power supply for arc discharge, and this DC power supply 11
Both output terminals of are connected to the internal pipe 9 and the peripheral surface 1a, respectively. When H2 gas is ejected from the nozzle and at the same time an arc discharge is generated in the nozzle, plasma hydrogen gas is ejected from the circumferential surface 1a.

When this arc discharge occurs, the temperature near the discharge portion becomes extremely high, and therefore it is necessary to cool the peripheral surface 1a and the internal pipe 9. Therefore, a cooling thin tube 12 is formed on the circumferential surface 1a to allow the cooling water to pass through, and a cooling water transport pipe 13 is formed inside the internal piping 9. This prevents the temperature from rising too high.

According to the film forming apparatus having the above configuration, the SiH4 gas enters the reaction chamber 1 through the gas introduction part 2, and (2) the gas is decomposed by arc discharge, and the plasma gas is blown out by the gas jetting part 3. As a result, SiH and gas are decomposed by the plasma from the gas jetting section 3 to the substrate 5, and the Sin and decomposition product gas are blown onto the peripheral surface of the substrate together with the H2 decomposition residual gas. At that time, the substrate 5 is rotated, and conditions such as reaction pressure, substrate temperature, arc current, and arc voltage are set.
A 3i film is formed.

According to such arc discharge, the power density per unit volume is significantly higher than that of glow discharge, and as a result, approximately 50χ of 5ill gas can be contributed to film formation, and the growth rate is significantly increased. can be increased to

In addition to the a-5i film, an amorphous silicon germanium film can be formed by processing GeH4 gas into SiH4 gas, and CH4
When gas is added, an amorphous silicon carbide film can be formed.

〔Effect of the invention〕

As described above, the film forming apparatus of the present invention has a higher gas utilization efficiency and a faster film forming rate than a glow discharge decomposition apparatus, thereby improving manufacturing efficiency and manufacturing cost.

Further, according to the film forming apparatus for an electrophotographic photoreceptor of the present invention, H
Arc discharge is generated using two gases, and SiH4 gas is blown into the plasma. Therefore, a film is not formed near the area where the arc discharge occurs, that is, at the nozzle portion. Furthermore, by controlling the distance between the nozzle section and the substrate and the amount of hydrogen gas etc. ejected, the film forming region can be set at a limited predetermined position. Therefore, for this reason, there is an advantage that the interior of the reaction chamber is not contaminated by decomposition products of the film-forming gas.

The film forming apparatus of the present invention is not limited to the above-described embodiments, and any number of modifications and improvements may be made without departing from the gist of the present invention.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a film forming apparatus according to an embodiment, and FIG. 2 is an enlarged schematic diagram of a gas ejection section attached to this apparatus. 1...Reaction chamber 2...Gas introduction section 3...Gas ejection section 5...Cylindrical substrate patent applicant (663)
Kinju Anjo, Representative of Kyocera Corporation

Claims (2)

[Claims] (1) A substrate is installed inside a reaction chamber into which a film-forming gas is introduced, and decomposition gas generated by arc discharge of the gas is blown onto the substrate to cause vapor phase growth. Film deposition equipment. (2) The film forming apparatus according to claim 1, wherein the film forming gas is an amorphous silicon film forming gas.