JPH01275466A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPH01275466A JPH01275466A JP63103125A JP10312588A JPH01275466A JP H01275466 A JPH01275466 A JP H01275466A JP 63103125 A JP63103125 A JP 63103125A JP 10312588 A JP10312588 A JP 10312588A JP H01275466 A JPH01275466 A JP H01275466A
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- Prior art keywords
- dielectric ceramic
- compsn
- ceramic composition
- oxide
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- Prior art date
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- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は誘電体磁器組成物に係り、特に酸化ストロンチ
ウム(SrO)、酸化バリウム(BaO)、酸化チタン
(TiO2)、酸化ネオヂウム(Nd20a)を主成分
として構成される誘電体磁器組成物であって、比誘電率
(ε)が大きく、かつその温度係数(TC)が小さく、
高周波における無負荷Q値の大きい誘電体磁器を提供す
ることができる誘電体磁器組成物に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a dielectric ceramic composition, in particular a dielectric ceramic composition containing strontium oxide (SrO), barium oxide (BaO), titanium oxide (TiO2), neodymium oxide (Nd20a). A dielectric ceramic composition composed of a main component, which has a large relative permittivity (ε) and a small temperature coefficient (TC),
The present invention relates to a dielectric ceramic composition that can provide a dielectric ceramic with a large no-load Q value at high frequencies.
[従来の技術]
従来より誘電体磁器としては、M g T 10 s
s゛CaTiO3、SrTiO3、CaTiOs −L
a203 ・2T i 02−MgT i 02系など
の組成物が用いられており、これらの組成物を用いるこ
とにより比誘電率(ε)が15〜280で、その温度係
数(TC)が+100〜−3000ppm/lの範囲の
誘電体磁器が得られることが知られている。[Prior art] Conventionally, as a dielectric ceramic, M g T 10 s
s゛CaTiO3, SrTiO3, CaTiOs-L
Compositions such as a203 ・2T i 02-MgT i 02 series are used, and by using these compositions, the relative dielectric constant (ε) is 15 to 280, and the temperature coefficient (TC) is +100 to - It is known that dielectric ceramics with a concentration in the range of 3000 ppm/l can be obtained.
[発明が解決しようとする課題]
しかしながら、従来提供されている組成物においては、
比誘電率が大きくなると、温度係数の絶対値も大きくな
り、温度係数の絶対値を小さくしようとすれば比誘電率
の小さい誘電体磁器しか得られないという欠点があり、
比誘電率及び温度係数が°共に良好な誘電体磁器組成物
は得られていなかった。[Problem to be solved by the invention] However, in the compositions provided conventionally,
As the relative permittivity increases, the absolute value of the temperature coefficient also increases, and if you try to reduce the absolute value of the temperature coefficient, you will only be able to obtain dielectric porcelain with a small relative permittivity.
A dielectric ceramic composition with good dielectric constant and temperature coefficient has not been obtained.
本発明は上記従来の問題点を解決し、誘電率が高く、し
かもその温度係数の絶対値が比較的小さく、高周波にお
ける無負荷Q値の大きい誘電体磁器を提供することがで
きる誘電体磁器組成物を提供することを目的とする。The present invention solves the above conventional problems and provides a dielectric ceramic composition that has a high dielectric constant, a relatively small absolute value of its temperature coefficient, and a large no-load Q value at high frequencies. The purpose is to provide something.
[課題を解決するための手段]
本発明の誘電体磁器組成物は、酸化ストロンチウム(S
ro)、酸化バリウム(BaO)、酸化チタン(Ti
O2)及び酸化ネオヂウム(Nd203)を主成分とし
て含む組成物であって、一般式[I]
xMO−yTiO2−zNd20s ・”[■](但
し、M=Ba+−p sr、(o<p≦1))と表した
とき、MO−TlO2−Nd203系において、x、y
、zが次のA−Hの5点を結んでできる範囲の中にある
ことを特徴とする。[Means for Solving the Problems] The dielectric ceramic composition of the present invention contains strontium oxide (S
ro), barium oxide (BaO), titanium oxide (Ti
O2) and neodymium oxide (Nd203) as main components, the composition has the general formula [I] xMO-yTiO2-zNd20s . )) In the MO-TlO2-Nd203 system, x, y
, z are within the range formed by connecting the following five points A-H.
x y
zA 5mol零80molk 15m
ol零B 15mol!k 80mol!k
5mol!kC30molk 85molk
5mol零D 30mo1%F 58mo
1%F 12mo1%FE 5 molk
68 mo1%i 27 molkに請求項(2
)の誘電体磁器組成物は、上記誘電体磁器組成物におい
て、酸化ビスマス(Bi2O3)を該主成分の15重量
%以下含むことを特徴とする。x y
zA 5mol zero 80molk 15m
ol zero B 15 mol! k 80mol! k
5mol! kC30molk 85molk
5mol zero D 30mo1%F 58mo
1%F 12mo1%FE 5 molk
68 mo1%i 27 molk claims (2
) is characterized in that it contains bismuth oxide (Bi2O3) in an amount of 15% by weight or less based on the main component.
即ち、本発明者らは前記従来の欠点を克服する材料につ
いて種々検討した結果、上記一般式[I]で表される組
成において、x、y、zが上記A−Hの5点を結んでで
きる範囲の中にあるものを主成分とし、これに酸化ビス
マス(Bi20a)を15重量%以下含有させることに
より、比誘電率(ε)が大きく、かつその温度係数(T
C)が小さく、高周波における無負荷Q値の大きい誘電
体磁器が得られることを見出し、本発明を完成させた。That is, as a result of various studies by the present inventors on materials that overcome the above-mentioned conventional drawbacks, in the composition represented by the above general formula [I], x, y, and z connect the above five points A-H. By using bismuth oxide (Bi20a) as the main component and containing 15% by weight or less of bismuth oxide (Bi20a), the dielectric constant (ε) is large and its temperature coefficient (T
It was discovered that a dielectric ceramic having a small C) and a large no-load Q value at high frequencies can be obtained, and the present invention was completed.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
まず、本発明の誘電体磁器組成物の主成分組成の範囲の
限定理由を第1図を参照して説明す′る。First, the reason for limiting the range of the main component composition of the dielectric ceramic composition of the present invention will be explained with reference to FIG.
第1図において、まず、上記範囲外のa領域では誘電率
が小さくなり実用的でない。b、c及びd領域では、比
誘電率の温度変化が大きくなりすぎる。また、e領域で
は焼結が困難となり緻密な磁器が得られなくなる。この
ため、x、y、zは前述のA〜Eの5点で囲まれる範囲
とするのが適当である。In FIG. 1, first, in the a region outside the above range, the dielectric constant becomes so small that it is not practical. In regions b, c, and d, the relative dielectric constant changes with temperature too much. Furthermore, in the e region, sintering becomes difficult and dense porcelain cannot be obtained. For this reason, it is appropriate that x, y, and z be in the range surrounded by the five points A to E described above.
pについては、それがOであると本発明の目的である高
い比誘電率が得られない。従って、0<p≦1とする。As for p, if it is O, a high dielectric constant, which is the object of the present invention, cannot be obtained. Therefore, 0<p≦1.
Bi2O3の添加については、その含有量が増加するに
従い比誘電率を大きくし、温度係数を改善することがで
きるが、主成分の15重量%を超えて添加すると無負荷
Qが低下する。このため、Bi2O3の添加量は15重
量%以下とするのが適当である。Regarding the addition of Bi2O3, as its content increases, the dielectric constant increases and the temperature coefficient can be improved, but if it is added in an amount exceeding 15% by weight of the main component, the no-load Q decreases. Therefore, it is appropriate that the amount of Bi2O3 added be 15% by weight or less.
なお、本発明においては、焼結助゛材として一般的に利
用されている5i02、MnCO3などを、主成分の組
成、特性を変えない範囲で添加することも可能である。In the present invention, it is also possible to add 5i02, MnCO3, etc., which are commonly used as sintering aids, as long as the composition and characteristics of the main components are not changed.
この場合、5i02、MnCO3はそれぞれ主成分の0
.1〜0.3重量%程度添加するのが好ましい。In this case, 5i02 and MnCO3 are the main components of 0
.. It is preferable to add about 1 to 0.3% by weight.
このような本発明の誘電体磁器組成物を製造するには、
例えば、酸化ストロンチウム(SrO)、炭酸ストロン
チウム(SrCO3)%酸化バリウム(BaO)、酸化
チタン(T iO2) %チタン酸バリウム(BaTi
O3)、酸化ネオヂウム(Nd203 )及び必要に応
じて酸化ビスマス(Bi2O3)等の粉末を所定の割合
となるよう秤量し、湿式ボールミル等を用いて十分に混
合する。次にこの混合物を乾燥した後、必要に応じ、1
000〜1100℃の範囲で数時間程度仮焼する。この
仮焼は必ずしも行う必要はないが、これを行うことによ
り粒子がより均一化され、訪電特性が向上する傾向があ
る。仮焼を行った場合には、仮焼物を更に湿式ボールミ
ル等で粉砕し、乾燥後、ポリビニルアルコールなどの適
当な有機バインダを加えて、顆粒を作り、これを所定の
形状にプレス成形した後、焼成を行う。この焼成は、1
250〜1400℃の温度範囲で0.5〜数時間程度行
う。(勿論、これらの製造条件は最も好適な数値であっ
て、本発明の磁器組成物は上記以外の条件もしくは方法
によって製造されても良い。)
[実施例]
以下に本発明を実施例を挙げて更に具体的に説明するが
、本発明はその要旨を超えない限り、以下の実施例に限
定されるものではない。To produce such a dielectric ceramic composition of the present invention,
For example, strontium oxide (SrO), strontium carbonate (SrCO3)% barium oxide (BaO), titanium oxide (TiO2)% barium titanate (BaTi
Powders such as O3), neodymium oxide (Nd203), and if necessary bismuth oxide (Bi2O3) are weighed out to a predetermined ratio and thoroughly mixed using a wet ball mill or the like. Next, after drying this mixture, if necessary, 1
Calcinate for several hours at a temperature of 000 to 1100°C. Although it is not always necessary to perform this calcination, by performing this, the particles tend to be made more uniform and the electric contact characteristics tend to be improved. In the case of calcining, the calcined product is further pulverized using a wet ball mill, etc., and after drying, an appropriate organic binder such as polyvinyl alcohol is added to form granules, which are then press-molded into a predetermined shape. Perform firing. This firing is 1
It is carried out at a temperature range of 250 to 1400°C for about 0.5 to several hours. (Of course, these manufacturing conditions are the most suitable values, and the porcelain composition of the present invention may be manufactured under conditions or methods other than those described above.) [Examples] The present invention will be described below with examples. The present invention will be described in more detail below, but the present invention is not limited to the following examples unless it exceeds the gist thereof.
実施例1
出発原料として、化学的に高純度のBaTiO3,5r
C03、TiO2、Nd2o3、Bi2O3及び5i0
2、MnCO3を用い、これらの原料を第1表に示す配
合比になるように秤量し、ボールミルを用いて純水と共
に約18時間湿式粉砕した。混合粉砕後の原料を乾燥後
、約1075℃で4時間空気中にて仮焼成を行い、再び
ボールミルで純水とともに約18時間湿式粉砕した。得
られた粉砕物を乾燥後、バインダー(ポリビニルアルコ
ール13重量%水溶液)を加えて造粒し、直径約16m
m、厚さ約0.7mmの円板状にプレス成形した。この
円板状試料を第1表に示す焼成温度で1時間焼成し、第
1表及び第1図に示す配合組成の誘電体磁器No、1〜
34を得た。Example 1 Chemically pure BaTiO3,5r as a starting material
C03, TiO2, Nd2o3, Bi2O3 and 5i0
2. Using MnCO3, these raw materials were weighed so as to have the compounding ratio shown in Table 1, and wet milled with pure water using a ball mill for about 18 hours. After drying the mixed and pulverized raw materials, they were pre-calcined in the air at about 1075° C. for 4 hours, and wet-pulverized again with pure water in a ball mill for about 18 hours. After drying the obtained pulverized material, a binder (a 13% by weight aqueous solution of polyvinyl alcohol) was added to granulate it into particles with a diameter of approximately 16 m.
It was press-molded into a disk shape with a thickness of about 0.7 mm. This disk-shaped sample was fired for 1 hour at the firing temperature shown in Table 1, and dielectric porcelain Nos. 1 to 1 with the compounding compositions shown in Table 1 and FIG.
I got 34.
このようにして得られた誘電体磁器の両面に銀ペースト
を塗布、乾燥後、約810℃で3分間焼付を行い、平行
平板コンデンサーとし、その電気的諸特性を評価した。Silver paste was coated on both sides of the dielectric ceramic thus obtained, and after drying, it was baked at about 810° C. for 3 minutes to form a parallel plate capacitor, and its electrical properties were evaluated.
結果を第1表に示す。The results are shown in Table 1.
なお、訪電率ε及び無負荷Qは、25℃、1MHzで測
定した。また、話電率の温度係数(TC)は、−55℃
〜+125℃の温度範囲における100KHzでの測定
値より求めた。絶縁抵抗(IR)は、室温においてDC
looV。Note that the power visit rate ε and the no-load Q were measured at 25° C. and 1 MHz. In addition, the temperature coefficient (TC) of the telephone call rate is -55℃
It was determined from measurements at 100 KHz in a temperature range of ~+125°C. Insulation resistance (IR) is DC at room temperature.
looV.
60秒の測定値を示した。The measurement value for 60 seconds is shown.
第1表より明らかなように、本発明の範囲内の誘電体磁
器組成物は、比話電率(ε)が大きく、かつその温度係
数(TC)が比較的小さく、高周波における無負荷Qが
大きいという優れた特性を有し、温度補償用、高周波用
等の材料に適している。As is clear from Table 1, the dielectric ceramic composition within the scope of the present invention has a large specific electrical constant (ε), a relatively small temperature coefficient (TC), and a low no-load Q at high frequencies. It has the excellent property of being large and is suitable for materials for temperature compensation, high frequency, etc.
〔発明の効果コ
以上詳述した通り、本発明の誘電体磁器組成物によれば
、誘電率が高く、しかもその温度係数の絶対値が比較的
小さく、高周波における無負荷Q値の大ぎい誘電体磁器
が提供される。従って、本発明の誘電体磁器組成物は、
温度補償用、高周波用等の誘電体磁器として極めて有用
である。[Effects of the Invention] As detailed above, the dielectric ceramic composition of the present invention has a high dielectric constant, a relatively small absolute value of its temperature coefficient, and a large no-load Q value at high frequencies. Body porcelain is provided. Therefore, the dielectric ceramic composition of the present invention is
It is extremely useful as a dielectric ceramic for temperature compensation, high frequency, etc.
特に、本発明において、酸化ビスマス(B i 20a
)を前記主成分の15重量%以下含有させることにより
、比誘電率を大きくし、温度係数を改善することができ
る。In particular, in the present invention, bismuth oxide (B i 20a
) in an amount of 15% by weight or less based on the main components, the dielectric constant can be increased and the temperature coefficient can be improved.
第1図は本発明の誘電体磁器組成物の組成を説明する三
元状態図である。
代 理 人 弁理士 重 野 割筒1
図
手続補正書
l 事件の表示
昭和63年特許願第103125号
2 発明の名称
誘電体磁器組成物
3 補正をする者
事件との関係 特許出願人
名 称 三菱鉱業セメント株式会社4 代理人
住 所 東京都港区虎ノ門1丁目15番7号〒105
TG115ビル 8階
を
自 発
6 補正の対象
明細書の発明の詳細な説明の欄。
7 補正の内容
(1) 明細書第5頁第13行に「実用的でない。b、
c及び」とあるのをr実用的でない。b領域ではC−I
R積が小さくなり、やはり実用的でない。C領域では比
誘電率が小さく、その温度変化が大きくなる。」と訂正
する。
以上FIG. 1 is a ternary phase diagram illustrating the composition of the dielectric ceramic composition of the present invention. Agent Patent Attorney Shigeno Warizutsu 1
Illustration procedure amendment l Indication of the case Patent Application No. 103125 of 1988 2 Name of the invention Dielectric ceramic composition 3 Relationship to the case by the person making the amendment Name of patent applicant Name Mitsubishi Mining Cement Co., Ltd. 4 Address of agent Tokyo 1-15-7 Toranomon, Minato-ku 105
TG115 building 8th floor 6 Column for detailed explanation of the invention in the specification subject to amendment. 7. Contents of the amendment (1) On page 5, line 13 of the specification, it is stated that “It is not practical.b.
"c" and "r" are not practical. In region b, C-I
The R product becomes small, which is also not practical. In the C region, the dielectric constant is small and its temperature change becomes large. ” he corrected. that's all
Claims (1)
BaO)、酸化チタン(TiO_2)及び酸化ネオヂウ
ム(Nd_2O_3)を主成分として含む組成物であっ
て、一般式[I] xMO−yTiO_2−zNd_2O_3 ・・・[I
]{但し、M=Ba_1_−_pSr_p(0<p≦1
)}と表したとき、MO−TiO_2−Nd_2O_3
系において、x,y,zが次のA〜Eの5点を結んでで
きる範囲の中にあることを特徴とする誘電体磁器組成物
。 x y z A 5mol% 80mol% 15mol%B 1
5mol% 80mol% 5mol%C 30mo
l% 65mol% 5mol% D 30mol%
58mol% 12mol% E 5mol% 6
8mol% 27mol% (2)特許請
求の範囲第1項に記載の誘電体磁器組成物において、酸
化ビスマス(Bi_2O_3)を前記主成分の15重量
%以下含むことを特徴とする誘電体磁器組成物。(1) Strontium oxide (SrO), barium oxide (
BaO), titanium oxide (TiO_2) and neodymium oxide (Nd_2O_3) as main components, the composition has the general formula [I] xMO-yTiO_2-zNd_2O_3 ... [I
] {However, M=Ba_1_−_pSr_p(0<p≦1
)}, MO-TiO_2-Nd_2O_3
A dielectric ceramic composition characterized in that in the system, x, y, and z are within the range formed by connecting the following five points A to E. x y z A 5mol% 80mol% 15mol%B 1
5mol% 80mol% 5mol%C 30mo
l% 65mol% 5mol% D 30mol%
58mol% 12mol% E 5mol% 6
8 mol% 27 mol% (2) The dielectric ceramic composition according to claim 1, characterized in that it contains bismuth oxide (Bi_2O_3) in an amount of 15% by weight or less based on the main component.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63103125A JPH01275466A (en) | 1988-04-26 | 1988-04-26 | Dielectric ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63103125A JPH01275466A (en) | 1988-04-26 | 1988-04-26 | Dielectric ceramic composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01275466A true JPH01275466A (en) | 1989-11-06 |
JPH0571538B2 JPH0571538B2 (en) | 1993-10-07 |
Family
ID=14345849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63103125A Granted JPH01275466A (en) | 1988-04-26 | 1988-04-26 | Dielectric ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01275466A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
WO2008117710A1 (en) * | 2007-03-26 | 2008-10-02 | Murata Manufacturing Co., Ltd. | Photosensitive dielectric paste and electronic part made with the same |
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JPS593804A (en) * | 1982-06-30 | 1984-01-10 | 株式会社小糸製作所 | Lens of lamp for vehicle |
JPS6221607A (en) * | 1985-07-18 | 1987-01-30 | Hitachi Electronics Eng Co Ltd | Transfer device using lever-like member performing rectangular motion |
JPS62216107A (en) * | 1985-11-07 | 1987-09-22 | 株式会社住友金属エレクトロデバイス | Microwave dielectric porcelain compound |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
US5304521A (en) * | 1991-09-27 | 1994-04-19 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5350721A (en) * | 1991-09-27 | 1994-09-27 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZNO-B203-SI02 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5458981A (en) * | 1991-09-27 | 1995-10-17 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5485132A (en) * | 1991-09-27 | 1996-01-16 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5488019A (en) * | 1991-09-27 | 1996-01-30 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5493262A (en) * | 1991-09-27 | 1996-02-20 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
WO2008117710A1 (en) * | 2007-03-26 | 2008-10-02 | Murata Manufacturing Co., Ltd. | Photosensitive dielectric paste and electronic part made with the same |
JP5104852B2 (en) * | 2007-03-26 | 2012-12-19 | 株式会社村田製作所 | Photosensitive dielectric paste and electronic component using the same |
Also Published As
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JPH0571538B2 (en) | 1993-10-07 |
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