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JPH01241772A - Terminal of low surge impedance conductor - Google Patents

Terminal of low surge impedance conductor

Info

Publication number
JPH01241772A
JPH01241772A JP6897788A JP6897788A JPH01241772A JP H01241772 A JPH01241772 A JP H01241772A JP 6897788 A JP6897788 A JP 6897788A JP 6897788 A JP6897788 A JP 6897788A JP H01241772 A JPH01241772 A JP H01241772A
Authority
JP
Japan
Prior art keywords
conductor
insulator
terminal
surge impedance
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6897788A
Other languages
Japanese (ja)
Other versions
JPH0470748B2 (en
Inventor
Kunio Tsurumaki
鶴巻 国夫
Ryoji Miyamoto
宮本 良治
Takahiro Minami
南 隆浩
Hitoshi Segawa
瀬川 仁之
Ryunosuke Masui
増井 龍之助
Takeshi Sakajiri
坂尻 武
Kaoru Matsui
松井 薫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KANSAI TEC KK
NICHIDOU DENKO KK
Tatsuta Electric Wire and Cable Co Ltd
Original Assignee
KANSAI TEC KK
NICHIDOU DENKO KK
Tatsuta Electric Wire and Cable Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KANSAI TEC KK, NICHIDOU DENKO KK, Tatsuta Electric Wire and Cable Co Ltd filed Critical KANSAI TEC KK
Priority to JP6897788A priority Critical patent/JPH01241772A/en
Publication of JPH01241772A publication Critical patent/JPH01241772A/en
Publication of JPH0470748B2 publication Critical patent/JPH0470748B2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、避雷器、架空地線等を接地するために用い
る低サージインピーダンス導体の端末部に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a terminal portion of a low surge impedance conductor used for grounding a lightning arrester, an overhead ground wire, etc.

〔従来の技術〕[Conventional technology]

従来、避雷器等の接地用導体としては、600Vビニル
絶縁電線が汎用されてきたが、近年架空送配電線路に対
する雷害対策の一貫として接地用導体の低サージインピ
ーダンス化が検討され、種々の低サージインピーダンス
導体が提案されている。
Traditionally, 600V vinyl insulated wires have been widely used as grounding conductors for lightning arresters, etc., but in recent years, lower surge impedance of grounding conductors has been studied as part of lightning damage countermeasures for overhead power transmission and distribution lines, and various low-surge impedance wires have been used. Impedance conductors have been proposed.

本願発明者等による実願昭62−77701の考案もこ
のような提案の一つであり、雷害対策に寄与している。
The invention proposed by the present inventors in Utility Model Application No. 77701/1982 is one such proposal, and contributes to countermeasures against lightning damage.

上記実用新案登録願の考案の要旨は、金属板からなる内
部導体の周りにほぼ矩形状に絶縁体を被覆し、上記絶縁
体の少なくとも片面上に金属板からなる外部導体を前記
内部導体と平行に相対向して添設し、さらにその周りに
外被を施したことを特徴とする低サージインピーダンス
導体である。
The gist of the invention of the above utility model registration application is that an insulator is coated around an inner conductor made of a metal plate in a substantially rectangular shape, and an outer conductor made of a metal plate is placed on at least one side of the insulator parallel to the inner conductor. This is a low surge impedance conductor characterized by being attached oppositely to each other and having an outer sheath around it.

なお、この発明における主導体及び副導体は上記実用新
案登録願の考案における低サージインピーダンス導体の
内部導体、外部導体と同意義のものである。
Note that the main conductor and sub-conductor in this invention have the same meaning as the inner conductor and outer conductor of the low surge impedance conductor in the invention of the above-mentioned utility model registration application.

ところで、上記考案の低サージインピーダンス導体は種
々の架空送配電線路や避雷針など雷害の危険性のあるす
べての施設に適用し得るものであり、架空地線や避雷器
の接地側などに接続して用いられる。従って、沿面閃絡
破壊等を引き起こさずまた特性を損うことがないよう簡
便に端末処理された低サージインピーダンス導体の端末
部が求められていた。
By the way, the low surge impedance conductor devised above can be applied to all facilities that are at risk of lightning damage, such as various overhead power transmission and distribution lines and lightning rods, and can be connected to the ground side of an overhead ground wire or lightning arrester. used. Accordingly, there has been a need for a terminal portion of a low-surge impedance conductor that can be simply terminal-treated so as not to cause flashover failure or damage to characteristics.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、低サージインピーダンス導体自体が新規
な技術的概念であり、そのための端末処理方法や端末部
の構造は未だ開発されていない。
However, the low surge impedance conductor itself is a new technical concept, and the terminal processing method and structure of the terminal portion thereof have not yet been developed.

一般に複数の導体または導体と遮蔽体を有する電線、ケ
ーブル等の端末部は、複数の導体の端末部間または導体
の端末部と遮蔽体端末部との間を絶縁するために絶縁テ
ープを巻くか熱融着テープを巻いた後加熱モールドして
端末部における絶縁体を形成しているが、中間部と違っ
て電界が不均一になることや絶縁体の形成が手作業にな
ることを考慮して絶縁体層を中間部よりも厚くし、かつ
電界分布をなるべく均一にするため導体端末部間または
遮蔽体−導体間に補強絶縁を施し、導体端末部から中間
部への絶縁体外径の減少傾向を滑らかにしており、その
ため端末部全体の長さが長(なる。
Generally, the terminals of electric wires, cables, etc. that have multiple conductors or conductors and shields are wrapped with insulating tape to insulate between the terminals of the multiple conductors or between the terminals of the conductor and the shield terminal. The insulator is formed at the end by wrapping heat-adhesive tape and then heat-molding it, but unlike the middle part, we took into account that the electric field would be uneven and that the insulator would have to be formed manually. In order to make the insulator layer thicker than the middle part, and to make the electric field distribution as uniform as possible, reinforcement insulation is applied between the conductor terminal parts or between the shield and the conductor, and the outer diameter of the insulator is reduced from the conductor terminal part to the middle part. The tendency is smoothed out, and as a result, the length of the entire terminal section becomes longer.

従って、端末部の形成に手間が掛かるだけでなく、端末
部の可撓性が悪くなるため、配線工事における作業性も
低下するという問題がある。このような手作業を簡略化
するため、熱収縮チューブを用いて端末処理を行う方法
も考えられるが、この方法で形成された端末部はインパ
ルス破壊電圧特性が不十分であるという問題があった。
Therefore, there is a problem in that not only is it time-consuming to form the terminal portion, but also the flexibility of the terminal portion is deteriorated, resulting in a reduction in workability in wiring work. In order to simplify such manual work, it is possible to treat the terminals using heat-shrinkable tubes, but there is a problem in that the terminals formed by this method have insufficient impulse breakdown voltage characteristics. .

この発明は、上記の現状に鑑み、低サージインピーダン
ス導体の機能を低下させることなく、確実かつ容易に形
成し得る低サージインピーダンス導体の端末部を提供す
ることを目的とする。
In view of the above-mentioned current situation, it is an object of the present invention to provide a terminal portion of a low-surge impedance conductor that can be formed reliably and easily without deteriorating the function of the low-surge impedance conductor.

〔課題を解決するための手段〕[Means to solve the problem]

上記の課題を解決するため、この発明は、平板状の主導
体の外周にほぼ矩形状に絶縁体を被覆し、上記絶縁体の
少なくとも片面上に主導体と平行に平板状の副導体を添
設し、その外周に外被を被覆してなる低サージインピー
ダンス導体の端末部において、外被、副導体及び絶縁体
を順次段状に剥ぎ取り、副導体露出部、絶縁体露出部及
び主導体露出部に当接するように設けた半導電性層と、
上記の半導電性層を覆うようにその外周に設けた絶縁体
層と、を具備した構成としたものである。
In order to solve the above problems, the present invention covers the outer periphery of a flat main conductor with an insulator in a substantially rectangular shape, and adds a flat sub-conductor on at least one side of the insulator in parallel with the main conductor. At the terminal part of the low surge impedance conductor, which is made of a low-surge impedance conductor whose outer periphery is coated with an outer sheath, the outer sheath, sub-conductor and insulator are sequentially peeled off stepwise to expose the sub-conductor, the exposed insulator and the main conductor. a semiconductive layer provided in contact with the exposed portion;
An insulating layer is provided on the outer periphery of the semiconductive layer so as to cover the semiconductive layer.

〔作用〕[Effect]

上記の構成を有するこの発明の低サージインピーダンス
導体の端末部は、接続すべき低サージインピーダンス導
体の副導体露出部と主導体接続部とに当接するように半
導電性層を設けであるので、雷サージの侵入によって主
導体と副導体との間に瞬間的に大きな電位差が発生した
場合でもその電位差が半導電性層の抵抗によって長さ方
向にほぼ均等に分圧され、従って、主導体部直上に大き
な電位傾度を生ずることがなく、この半導電性届かない
場合に比べてインパルス電圧による絶縁破壊値が高くな
る。換言すれば、端末部を短くすることができる。
Since the terminal portion of the low surge impedance conductor of the present invention having the above configuration is provided with a semiconductive layer so as to come into contact with the sub conductor exposed portion and the main conductor connection portion of the low surge impedance conductor to be connected, Even if a large potential difference momentarily occurs between the main conductor and the sub-conductor due to the invasion of lightning surge, the potential difference is divided almost equally in the length direction by the resistance of the semiconductive layer, and therefore the main conductor A large potential gradient is not generated directly above, and the dielectric breakdown value due to the impulse voltage is higher than in the case where the semiconductivity does not reach. In other words, the terminal portion can be shortened.

しかも、薄い半導電性層を設けるだけであるから、これ
による外径増はごく僅かであり、可撓性を損ねることも
ない。
Moreover, since only a thin semiconductive layer is provided, the increase in the outer diameter is very small and does not impair flexibility.

〔実施例〕〔Example〕

第1図はこの発明による低サージインピーダンス導体の
端末部の一実施例を示し、第1図(a)は、一部縦断面
図とした平面図、第1図(ハ)は第1図(a)のX−X
断面矢視図、第1図(φは同Y−Y断面矢視図である。
FIG. 1 shows an embodiment of the terminal part of a low surge impedance conductor according to the present invention, FIG. a) X-X
Cross-sectional view, FIG. 1 (φ is the Y-Y cross-sectional view, FIG.

図示実施例において、端末処理すべき低サージインピー
ダンス導体は、銅条からなる主導体lの外周にビニル絶
縁体2を被覆し、そのビニル絶縁体2の片面上に銅テー
プからなる副導体3を主導体1と平行に添設し、その外
周にビニル外被4を被覆したものである。
In the illustrated embodiment, the low surge impedance conductor to be terminal-treated has a main conductor l made of copper strip covered with a vinyl insulator 2, and a sub-conductor 3 made of copper tape on one side of the vinyl insulator 2. It is attached parallel to the main conductor 1, and its outer periphery is covered with a vinyl jacket 4.

この実施例の端末部は以下に述べるようにして形成され
る。即ち、低サージインピーダンス導体の端部のビニル
絶縁体2、副導体3及びビニル外被4を剥ぎ取づた主導
体端末部11にボルト穴12を形成して主導体露出部1
3とし、主導体露出部13の内端より所定長lに渡って
副導体3及びビニル外被4を剥ぎ取り、絶縁体露出部2
1とする。この場合、副導体3はビニル外被4の剥ぎ取
り端41よりやや長めに残して副導体露出部31とし、
上記剥ぎ取り端41で折り返す。
The terminal section of this embodiment is formed as described below. That is, a bolt hole 12 is formed in the main conductor terminal part 11 by peeling off the vinyl insulator 2, the sub-conductor 3 and the vinyl jacket 4 at the end of the low surge impedance conductor, and the main conductor exposed part 1 is removed.
3, the sub conductor 3 and the vinyl jacket 4 are peeled off over a predetermined length l from the inner end of the main conductor exposed part 13, and the insulator exposed part 2 is removed.
Set to 1. In this case, the sub-conductor 3 is left slightly longer than the stripped end 41 of the vinyl jacket 4 to form the sub-conductor exposed portion 31,
Fold back at the peeled edge 41.

次に、絶縁体露出部21の外端部(主導体露出部13と
の境界部)及び上記外被4の折り返し端41のやや内側
にシーリングテープ5を巻いた後、上記の折り返された
副導体露出部31上、絶縁体露出部21上、主導体露出
部13の内端部上に半導電性自己融着テープを巻き付け
て半導電性層22を形成する。その後、半導電性層22
を覆うようにその外周にエチレンプロピレンゴム製の熱
収縮チューブを用いて絶縁体層51を形成する。さらに
その後、絶縁体層51の両端部外方に、粘着性ポリエチ
レンテープ6を巻き、その上にさらに粘着性ビニルテー
プ7を巻(。
Next, after wrapping the sealing tape 5 around the outer end of the insulator exposed portion 21 (the boundary with the main conductor exposed portion 13) and slightly inside the folded end 41 of the outer sheath 4, The semiconductive layer 22 is formed by wrapping a semiconductive self-adhesive tape around the exposed conductor portion 31, the exposed insulator portion 21, and the inner end of the exposed main conductor portion 13. After that, the semiconductive layer 22
An insulating layer 51 is formed on the outer periphery of the insulating layer 51 using a heat shrinkable tube made of ethylene propylene rubber so as to cover it. Furthermore, after that, an adhesive polyethylene tape 6 is wrapped around both ends of the insulating layer 51, and an adhesive vinyl tape 7 is further wrapped on top of the adhesive polyethylene tape 6.

以上のように形成された低サージインピーダンス導体の
端末部について、インパルス破壊電圧試験を行った。こ
の試験において、試料は第1図(a)における界面長l
を変えた実施例3種類について各3試料ずつを用意し、
比較のため、これらの実施例と半導電性層を有しない点
だけが異なる試料をそれぞれ同様に作製した。試験結果
を次頁の表に示す。
An impulse breakdown voltage test was conducted on the terminal portion of the low surge impedance conductor formed as described above. In this test, the sample has an interfacial length l in Fig. 1(a).
Three samples were prepared for each of the three types of examples in which the
For comparison, samples were prepared in the same manner as in these examples, except that they did not have a semiconductive layer. The test results are shown in the table on the next page.

試験方法は、主導体と副導体との間に20KVのインパ
ルス電圧(インパルス波形はJIS 03005による
)を印加後、l0KVずつ昇圧し、各3回印加した。こ
の表に示す試験結果において、界面閃絡とは、実施例の
場合は絶縁体2と半導電性層22との界面、比較例の場
合は絶縁体2と絶縁体層51との界面を経路として、主
導体露出部部13と副導体露出部31との間に閃絡が生
じたものであり、絶縁破壊とはこのような界面を通らず
に絶縁体2自体に絶縁破壊が生じたものである。
The test method was to apply an impulse voltage of 20 KV (impulse waveform according to JIS 03005) between the main conductor and the sub-conductor, then increase the voltage by 10 KV, and apply each three times. In the test results shown in this table, interfacial flashing refers to the interface between the insulator 2 and the semiconductive layer 22 in the case of the example, and the interface between the insulator 2 and the insulator layer 51 in the case of the comparative example. As a result, flash shorting occurs between the exposed main conductor portion 13 and the exposed sub-conductor portion 31, and dielectric breakdown is when dielectric breakdown occurs in the insulator 2 itself without passing through such an interface. It is.

この表の試験結果からも明らかなように、半導電性層2
2を設けない場合は、界面長lを300m膿にしてもな
お80KV以下で界面閃絡を生じるが、半導電性層22
を設けたものは界面長りを250++n以上にすること
により絶縁破壊値より低い電圧で界面閃絡を生じること
はなくなる。
As is clear from the test results in this table, the semiconductive layer 2
If the semiconductive layer 22 is not provided, even if the interface length l is set to 300 m, interface flashing will still occur at 80 KV or less, but the semiconductive layer 22
By setting the interface length to 250++n or more, interfacial flash shorting will not occur at a voltage lower than the dielectric breakdown value.

なお、上記実施例では、半導電性層23は半導電性テー
プを用いて形成したが、半導電性熱収縮チューブを用い
たものや導電性塗料を塗布することによって形成したも
の等も当然この発明に含まれる。また、主導体露出部1
3、副導体露出部31、絶縁体層51等の構造、形状も
上記実施例に限定されるものではない。
In the above embodiment, the semiconductive layer 23 was formed using a semiconductive tape, but it can also be formed using a semiconductive heat shrink tube or by applying a conductive paint. Included in invention. In addition, the main conductor exposed portion 1
3. The structure and shape of the sub-conductor exposed portion 31, the insulator layer 51, etc. are not limited to the above embodiments.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、この発明による低サージインピー
ダンス導体の端末部は、端末処理すべき低サージインピ
ーダンス導体の副導体露出部、絶縁体露出部及び主導体
接続部に当接させて薄い半導電性層を設けたため、主導
体と副導体との間にインパルス電圧が加わっても、その
電位差が半導電性層の抵抗によって長さ方向にほぼ均等
に分圧される結果、インパルス電圧に対して高い絶縁破
壊強度を確保することができ、従って、端末部を短くす
ることができる。しかも外径増はごく僅かであり、可撓
性が損われることもない。即ちこの発明による低サージ
インピーダンス導体の端末部は、低サージインピーダン
ス導体の機能を低下させることなく確実かつ容易に形成
することができる。
As explained above, the terminal portion of the low-surge impedance conductor according to the present invention is made to contact the exposed sub-conductor portion, exposed insulator portion, and main conductor connection portion of the low-surge impedance conductor to be terminal-treated to form a thin semiconducting material. Because the layer is provided, even if an impulse voltage is applied between the main conductor and the sub conductor, the potential difference is divided almost equally in the length direction by the resistance of the semiconductive layer, resulting in a voltage that is higher than the impulse voltage. Dielectric breakdown strength can be ensured, and therefore the terminal portion can be shortened. Moreover, the increase in outer diameter is very small, and flexibility is not impaired. That is, the terminal portion of the low surge impedance conductor according to the present invention can be formed reliably and easily without deteriorating the function of the low surge impedance conductor.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明による低サージインピーダンス導体の
端末部の一実施例を示し、第1図(a)は−部縦断面・
図とした平面図、第1図(hは第1図(a)のX−X断
面矢視図、第1図(C)は第1図(a)のY−Y断面矢
視図である。 1・・・主導体、   2・・・絶縁体、3・・・副導
体、   4・・・ビニル外被、11・・主導体端末部
、13・・主導体露出部、21・・絶縁体露出部、22
・・半導電性層、31・・副導体露出部、51・・絶縁
体層。 特許出願人       株式会社 関西チック同  
       日勤電工株式会社同         
夕ツタ電線株式会社同代理人    鎌田文二 (a)    第1図
FIG. 1 shows an embodiment of the terminal part of the low surge impedance conductor according to the present invention, and FIG.
Figure 1 (h is a cross-sectional view taken along the line X-X in Figure 1 (a), and Figure 1 (C) is a cross-sectional view taken along the Y-Y line in Figure 1 (a). 1...Main conductor, 2...Insulator, 3...Subconductor, 4...Vinyl jacket, 11...Main conductor terminal part, 13...Main conductor exposed part, 21...Insulation Exposed body part, 22
...Semiconductive layer, 31.. Sub-conductor exposed portion, 51.. Insulator layer. Patent applicant: Kansai Chick Co., Ltd.
Nikkin Denko Co., Ltd.
Yutsuta Electric Cable Co., Ltd. Agent Bunji Kamata (a) Figure 1

Claims (1)

【特許請求の範囲】[Claims] (1)平板状の主導体の外周にほぼ矩形状に絶縁体を被
覆し、上記絶縁体の少なくとも片面上に主導体と平行に
平板状の副導体を添設し、その外周に外被を被覆してな
る低サージインピーダンス導体の端末部において: 外被、副導体及び絶縁体を順次段状に剥ぎ取り、副導体
露出部、絶縁体露出部及び主導体露出部に当接するよう
に設けた半導電性層と; 上記の半導電性層を覆うようにその外周に設けた絶縁体
層と; を具備したことを特徴とする低サージインピーダンス導
体の端末部。
(1) Cover the outer periphery of a flat main conductor with an insulator in a substantially rectangular shape, attach a flat sub-conductor on at least one side of the insulator in parallel with the main conductor, and cover the outer periphery of the sub-conductor. At the terminal part of a coated low-surge impedance conductor: The outer sheath, sub-conductor and insulator are sequentially peeled off in steps, and the terminal is placed so as to contact the exposed sub-conductor, exposed insulator and exposed part of the main conductor. A terminal portion of a low surge impedance conductor, comprising: a semiconductive layer; and an insulating layer provided on the outer periphery of the semiconductive layer so as to cover the semiconductive layer.
JP6897788A 1988-03-22 1988-03-22 Terminal of low surge impedance conductor Granted JPH01241772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6897788A JPH01241772A (en) 1988-03-22 1988-03-22 Terminal of low surge impedance conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6897788A JPH01241772A (en) 1988-03-22 1988-03-22 Terminal of low surge impedance conductor

Publications (2)

Publication Number Publication Date
JPH01241772A true JPH01241772A (en) 1989-09-26
JPH0470748B2 JPH0470748B2 (en) 1992-11-11

Family

ID=13389238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6897788A Granted JPH01241772A (en) 1988-03-22 1988-03-22 Terminal of low surge impedance conductor

Country Status (1)

Country Link
JP (1) JPH01241772A (en)

Also Published As

Publication number Publication date
JPH0470748B2 (en) 1992-11-11

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