JPH01228102A - Positive coefficient thermistor material and manufacture thereof - Google Patents
Positive coefficient thermistor material and manufacture thereofInfo
- Publication number
- JPH01228102A JPH01228102A JP5371988A JP5371988A JPH01228102A JP H01228102 A JPH01228102 A JP H01228102A JP 5371988 A JP5371988 A JP 5371988A JP 5371988 A JP5371988 A JP 5371988A JP H01228102 A JPH01228102 A JP H01228102A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor material
- manganese
- temperature coefficient
- resistance
- coefficient thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、特定の温度で抵抗値が急激に増大する正特性
サーミスタ材料とその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a positive temperature coefficient thermistor material whose resistance value increases rapidly at a specific temperature, and to a method for manufacturing the same.
（従来の技術）
チタン酸バリウムを主成分とし、ニオブあるいは希土類
元素などで半導体化された正特性サーミスタは、通常ス
イッチング温度と呼ばれる特定の温度以上で急激な抵抗
値増加を示す。この特性を利用して、発熱体やテレビの
消磁回路のスイッチング素子など、広範な用途に用いら
れている。(Prior Art) A positive temperature coefficient thermistor whose main component is barium titanate and which is made into a semiconductor with niobium or a rare earth element exhibits a rapid increase in resistance above a certain temperature, which is usually called the switching temperature. Taking advantage of this property, it is used in a wide range of applications, including heating elements and switching elements in television degaussing circuits.
この正特性サーミスタの基本特性として、常温での抵抗
値、抵抗温度係数（α）および抵抗変化幅が挙げられ、
このうち抵抗温度係数αは次式により算出される。The basic characteristics of this positive temperature coefficient thermistor include resistance value at room temperature, resistance temperature coefficient (α), and resistance change width.
Of these, the resistance temperature coefficient α is calculated by the following equation.
Ｔ、−Ｔ１
ここで、Ｔ１は、抵抗値が２５℃での抵抗値の２倍とな
る、スイッチング温度と呼ばれる温度、′ｒ２は、Ｔ１
より高い任意の温度（通常、Ｔ１より５０℃高い温度）
、Ｒ８およびＲ２はそれぞれ温度］′、およびＴ２の抵
抗値をそれぞれ表わす。また、抵抗変化幅は最大値と最
小値の比で表わされる。T, -T1 Here, T1 is the temperature called the switching temperature at which the resistance value is twice the resistance value at 25°C, and 'r2 is T1
Any higher temperature (typically 50°C above T1)
, R8 and R2 represent the temperature]' and the resistance value of T2, respectively. Further, the resistance change width is expressed as the ratio between the maximum value and the minimum value.
正特性サーミスタの基本特性である抵抗温度係数（α）
および抵抗変化幅は、マンガン（Ｍ ｎ ）の添加によ
って増大する。Temperature coefficient of resistance (α), which is the basic characteristic of positive temperature coefficient thermistors
And the resistance change width is increased by the addition of manganese (M n ).
（エレクトロニク・セラミクス： １９７７年各号二本
久夫： ＰＴＣサーミスタの新しい応用など参照）。(Electronic Ceramics: 1977 issues, Hisao Nimoto: New applications of PTC thermistors, etc.).
マンガン（Ｍ ｎ ）は、結晶粒内に存在する場合には
アクセプタ元素として働き、半導体化を阻害し、抵抗値
を増大してしまうため、特性を発現させる結晶粒界層に
偏析することが望ましい。When manganese (M n ) exists in crystal grains, it acts as an acceptor element, inhibits semiconductor formation, and increases the resistance value, so it is desirable that it segregates in the grain boundary layer where properties are expressed. .
（発明が解決しようとする課題）
しかしながら、従来、マンガン（Ｍ ｎ ）は酸化物（
ＭｎＯ，）、硝酸塩（Ｍｎ（Ｎ ０３）Ｚ）、炭酸塩（
Ｍ ｎ ＣＯ３）などの形で加えられるため、セラミッ
クスの焼結時に、結晶粒内にも拡散し、抵抗値が増大す
るとともに抵抗温度係数（α）、抵抗変化幅の向上が充
分でないという問題があった。(Problem to be Solved by the Invention) However, conventionally, manganese (M n ) is an oxide (
MnO,), nitrate (Mn(N 03)Z), carbonate (
Since it is added in the form of M n CO3), it diffuses into the crystal grains during sintering of ceramics, increasing the resistance value and causing problems such as insufficient improvement in the temperature coefficient of resistance (α) and resistance change width. there were.
本発明は−ｈ記の課題を解決するもので、マンガン（Ｍ
ｎ ）が結晶粒界層に偏析する高い抵抗温度係数αお
よび抵抗変化幅を有する正特性サーミスタ材料を提供す
るものである。The present invention solves the problem mentioned in -h.
The present invention provides a positive temperature coefficient thermistor material having a high temperature coefficient of resistance α and resistance change width in which n ) is segregated in the grain boundary layer.
（課題を解決するための手段）
チタン酸バリウム、ニオブあるいは希土類元素などの半
心体化元素、メタケイ酸マンガンを含む正特性サーミス
タ材料であり、化学式がＢａＴｉＯ３＋０．０１３Ｓｉ
０２＋０．０００７ＭｎＳｉＯ３＋０．００２Ｙ２０３
となるように、炭酸バリウム（ＢａＣＯ，）、酸化チタ
ン（Ｔ ｉ Ｏ２） 、酸化イツトリウム（ｙ −ｏ
ｓ ）−メタケイ酸マンガン（ＭｎＳｉＯａ）および二
酸化ケイ素（ＳｉＯ２）を秤量し、焼成するものである
。(Means for Solving the Problems) A positive characteristic thermistor material containing barium titanate, a hemicentric element such as niobium or a rare earth element, and manganese metasilicate, and whose chemical formula is BaTiO3+0.013Si.
02+0.0007MnSiO3+0.002Y203
Barium carbonate (BaCO,), titanium oxide (T i O2), yttrium oxide (y-o
s)-manganese metasilicate (MnSiOa) and silicon dioxide (SiO2) are weighed and fired.
（作 用）
上記の構成により、添加されたケイ素（Ｓｉ）は、セラ
ミックスの焼結時に、ガラス相となり結晶粒界層に偏析
するため、ケイ素との化合物として添加されたマンガン
（Ｍ ｎ ）は結晶粒界層に偏析される。(Function) With the above configuration, the added silicon (Si) becomes a glass phase and segregates in the grain boundary layer during sintering of the ceramic, so the manganese (M n ) added as a compound with silicon Segregated in grain boundary layers.
（実施例）
化学式がＢａＴｉＯ３ ＋０．０１３Ｓｉｏ２＋０．０
００７Ｍｎ５ｉ０３＋０．００２Ｙ、Ｏ，となるように
、炭酸バリウム（Ｂ ａ ＣＯ３）−酸化チタン（Ｔｉ
Ｏ２）、酸化イツトリウム（Ｙ２Ｏ２）、メタケイ酸マ
ンガン（ＭｎＳｉＯ，）および二酸化ケイ素（ＳｉＯ，
）＆秤量し、通常の方法で混合、仮焼、粉砕の工程を経
て粉体を成形し、１３５０℃で焼成して直径１４閣、厚
さ２１Ｉ１１の円板状のセラミックスを得さらに、ニッ
ケルめっきと銀より電極を形成した。(Example) The chemical formula is BaTiO3 +0.013Sio2+0.0
Barium carbonate (B a CO3) - titanium oxide (Ti
O2), yttrium oxide (Y2O2), manganese metasilicate (MnSiO,) and silicon dioxide (SiO,
) & weighed, then mixed, calcined, and crushed in the usual manner to form the powder, and fired at 1350°C to obtain a disc-shaped ceramic with a diameter of 14mm and a thickness of 21mm, and then nickel plated. An electrode was formed from silver.
同時に比較する従来例として、化学式がＢａＴｉＯ３＋
０．０２Ｓｉ０２＋０．０００７Ｍｎ０．＋０．００２
Ｙ２０３となるように、炭酸バリウム（ＢａＣＯ３）。As a conventional example for simultaneous comparison, the chemical formula is BaTiO3+
0.02Si02+0.0007Mn0. +0.002
Barium carbonate (BaCO3) as Y203.
酸化チタン（ＴｉｏｉＬ酸化イツトリウム（ｙ２ｏ、）
、二酸化マンガン（Ｍ ｎ Ｏ２）および二酸化ケイ素
（Ｓｉｎ、）を秤量し、上記と同様の方法で同じ形状の
セラミックスを得て、同様に電極を形成した。この２＠
Ｍの試料の抵抗値、抵抗温度係数（α）、抵抗変化幅お
よび破壊電圧を測定した結果を次の表に示す。Titanium oxide (TioiL yttrium oxide (y2o,)
, manganese dioxide (M n O2) and silicon dioxide (Sin, ) were weighed, ceramics of the same shape were obtained in the same manner as above, and electrodes were formed in the same manner. This 2@
The following table shows the results of measuring the resistance value, resistance temperature coefficient (α), resistance change width, and breakdown voltage of the M sample.
（発明の効果）
上記衣から明らかな通り、本発明による正特性サーミス
タは、従来方法による正特性サーミスタに比べて低い抵
抗値でありながら、抵抗温度係数（α）、抵抗変化幅、
破壊電圧の各特性が高く正特性サーミスタの特性を大幅
に向上する。(Effects of the Invention) As is clear from the above, the positive temperature coefficient thermistor according to the present invention has a lower resistance value than the conventional positive temperature coefficient thermistor, but has a lower resistance temperature coefficient (α), resistance change width,
Each characteristic of breakdown voltage is high, greatly improving the characteristics of a positive temperature coefficient thermistor.
特許出願人 松下電器産業株式会社Patent applicant: Matsushita Electric Industrial Co., Ltd.
Claims (2)
どの半導体化元素，メタケイ酸マンガンを含むことを特
徴とする正特性サーミスタ材料。(1) A positive temperature coefficient thermistor material characterized by containing barium titanate, a semiconducting element such as niobium or a rare earth element, and manganese metasilicate.
＋０．０００７ＭｎＳｉＯ＿３＋０．００２Ｙ＿２Ｏ＿
３となるように、炭酸バリウム（ＢａＣＯ＿３），酸化
チタン（ＴｉＯ＿２），酸化イットリウム（Ｙ＿２Ｏ＿
３），メタケイ酸マンガン（ＭｎＳｉＯ＿３）および二
酸化ケイ素（ＳｉＯ＿２）を秤量し、通常の方法で混合
，焼成することを特徴とする正特性サーミスタ材料の製
造方法。(2) Chemical formula is BaTiO_3 + 0.013SiO_2
+0.0007MnSiO_3+0.002Y_2O_
3, barium carbonate (BaCO_3), titanium oxide (TiO_2), yttrium oxide (Y_2O_
3) A method for producing a positive temperature coefficient thermistor material, which comprises weighing manganese metasilicate (MnSiO_3) and silicon dioxide (SiO_2), mixing and firing in a conventional manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5371988A JPH01228102A (en) | 1988-03-09 | 1988-03-09 | Positive coefficient thermistor material and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5371988A JPH01228102A (en) | 1988-03-09 | 1988-03-09 | Positive coefficient thermistor material and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01228102A true JPH01228102A (en) | 1989-09-12 |
Family
ID=12950635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5371988A Pending JPH01228102A (en) | 1988-03-09 | 1988-03-09 | Positive coefficient thermistor material and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01228102A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0629102A2 (en) * | 1993-06-08 | 1994-12-14 | OHIZUMI Mfg. Co., Ltd. | Exothermic device for different electric sources |
| CN110563458A (en) * | 2019-08-01 | 2019-12-13 | 丹东国通电子元件有限公司 | high-pulse overload resistant ceramic PTC thermistor and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4860295A (en) * | 1971-12-02 | 1973-08-23 | ||
| JPS50127199A (en) * | 1974-03-27 | 1975-10-06 | ||
| JPS57157502A (en) * | 1981-03-24 | 1982-09-29 | Murata Manufacturing Co | Barium titanate series porcelain composition |
-
1988
- 1988-03-09 JP JP5371988A patent/JPH01228102A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4860295A (en) * | 1971-12-02 | 1973-08-23 | ||
| JPS50127199A (en) * | 1974-03-27 | 1975-10-06 | ||
| JPS57157502A (en) * | 1981-03-24 | 1982-09-29 | Murata Manufacturing Co | Barium titanate series porcelain composition |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0629102A2 (en) * | 1993-06-08 | 1994-12-14 | OHIZUMI Mfg. Co., Ltd. | Exothermic device for different electric sources |
| EP0629102A3 (en) * | 1993-06-08 | 1995-02-01 | Ohizumi Mfg Co Ltd | Exothermic device for different electric sources. |
| CN110563458A (en) * | 2019-08-01 | 2019-12-13 | 丹东国通电子元件有限公司 | high-pulse overload resistant ceramic PTC thermistor and manufacturing method thereof |
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