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JPH01220464A - Resin-encapsulated semiconductor device - Google Patents

Resin-encapsulated semiconductor device

Info

Publication number
JPH01220464A
JPH01220464A JP63044389A JP4438988A JPH01220464A JP H01220464 A JPH01220464 A JP H01220464A JP 63044389 A JP63044389 A JP 63044389A JP 4438988 A JP4438988 A JP 4438988A JP H01220464 A JPH01220464 A JP H01220464A
Authority
JP
Japan
Prior art keywords
resin
bonding
tape
sealing
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63044389A
Other languages
Japanese (ja)
Inventor
Ryuji Kono
竜治 河野
Makoto Kitano
誠 北野
Asao Nishimura
西村 朝雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63044389A priority Critical patent/JPH01220464A/en
Publication of JPH01220464A publication Critical patent/JPH01220464A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the yield of resin cracks and to make a device thin, by using a temporary intermediate indirect material on the surface of a lead frame, mounting an element, bonding the element and the frame with a bonding resin, and sealing the device with a sealing resin. CONSTITUTION:A piece of heat resisting adhesive tape 5 is attached to the surface of a lead frame. A bonding resin 3 is applied on an element mounting part 5a. Thereafter, an element 1 is mounted. When vertical external force is applied on the element 1, the resin 3 is pushed to the outer part of te element 1 and attached to the side surface of the frame 2. After the resin 3 is hardened, the tape 5 is removed, and ultrasonic bonding is performed. At this time, since temperature is low, the resin 3 an sufficiently withstand the temperature. Thereafter, the surrounding part of the device is sealed with a sealing resin 4 and molded. Sine there is no place where the stress is concentrated in the sealing resin at high temperature during reflow, cracks are not yielded in the resin. Furthermore, the device can be made thin.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、樹脂封止型半導体装置の構造、及び製造方法
に係り、特に、樹脂クラック発生の防止及び薄型化に好
適な同装置の構造、及び製造方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to the structure and manufacturing method of a resin-sealed semiconductor device, and particularly to a structure of the device suitable for preventing resin cracks and reducing the thickness of the device. , and a manufacturing method.

〔従来の技術〕[Conventional technology]

従来の装置は、第17図にその幅方向断面図を示すよう
に、リード2zの集合体と、タブと呼ばれる素子搭載部
2yより成るリードフレームのタブ2y上に索子1を搭
載、接着し、回部周囲を封止用樹脂4で封止するという
方法がとられていた。
In the conventional device, as shown in a cross-sectional view in the width direction in FIG. 17, the cord 1 is mounted and glued onto a tab 2y of a lead frame consisting of an assembly of leads 2z and an element mounting portion 2y called a tab. , a method was used in which the circumference of the circuit was sealed with a sealing resin 4.

また、素子とリードを、封止用樹脂とは別に設けた樹脂
シート中に埋め込むという構造が特開昭60−9764
5号に記載されている。
In addition, a structure in which the element and leads are embedded in a resin sheet provided separately from the sealing resin was disclosed in Japanese Patent Application Laid-open No. 60-9764.
It is stated in No. 5.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術は、ICを基板にはんだ付けするために、
赤外線を照射するか、あるいは蒸気中にさらしてはんだ
を融解するりフロ一方式が用いられているがいずれもI
Cが直接高温中にさらされることになる。そのため、I
C内部の水分が蒸気圧を発生しその結果、応力がタブ下
コーナ部(タブの反素子搭載面とタブの側面が交差する
部分)に集中し、回部から封止樹脂中にクラックが発生
することが問題となっている。
In the above conventional technology, in order to solder an IC to a board,
One method is used: irradiating the solder with infrared rays or exposing it to steam to melt the solder.
C will be directly exposed to high temperatures. Therefore, I
Moisture inside C generates vapor pressure, and as a result, stress concentrates at the bottom corner of the tab (where the anti-element mounting surface of the tab intersects with the side surface of the tab), causing cracks in the sealing resin from the turning section. It is a problem to do so.

また、近年、半導体装置の高密度実装上の要求により、
同装置は薄型化の傾向にあるが、従来技術においては、
前述した通り、タブの上に素子を搭載するという2層枯
造のため、それが防げられていた。
In addition, in recent years, due to the demand for high-density packaging of semiconductor devices,
There is a trend toward thinner devices, but with conventional technology,
As mentioned above, this was prevented due to the two-layer construction in which the elements were mounted on top of the tab.

このようなことから、樹脂封止型半導体装置からタブを
排除できれば、同装置の樹脂クラックの発生は防止でき
、同時に同装置の薄型化も可能となる。
For this reason, if the tab can be eliminated from a resin-sealed semiconductor device, the occurrence of resin cracks in the device can be prevented, and at the same time, the device can be made thinner.

ところで、如来技術は、素子やリードを埋め込むために
ある程度軟かい状態になった樹脂シートの金型への配置
方法や、素子裏面全体が軟かい状態の樹脂シートに埋め
込まれることによる、素子搭載(埋め込み)時の位置決
め精度など、製造工程の面では配慮が欠けていた。また
、その樹脂シートは、基本的にその上に素子を搭載する
ことが目的であり、材質を変えたダブに過ぎない、従っ
て、従来型と比較して装置全体の薄型化は困難である。
By the way, the Tathagata technology involves a method of placing a somewhat soft resin sheet in a mold for embedding elements and leads, and a method of mounting the element ( There was a lack of consideration in the manufacturing process, such as positioning accuracy during embedding. In addition, the resin sheet is basically intended for mounting elements on it, and is merely a dub made of a different material. Therefore, it is difficult to make the entire device thinner than the conventional type.

さらに前述の構造では、樹脂シートと封止用樹脂の材質
をたとえ同じにしたとしても、工程が異なるため両者の
界面は残るので、結果的に従来型以上に面積の広いダブ
を使っていることになす、リフロー時の内部水分の界面
集中に対する配慮がなされておらず、樹脂クラックが生
じやすい。
Furthermore, in the above-mentioned structure, even if the resin sheet and the sealing resin are made of the same material, the process is different and an interface between the two remains, resulting in the use of a dub with a wider area than the conventional type. Eggplant does not take into consideration the concentration of internal moisture at the interface during reflow, and resin cracks are likely to occur.

また、内部リード先端部を樹脂シート内に埋め込んでし
まうことで、内部リードの実質的長さ(樹脂シート外端
から周囲封止用樹脂外端までの距離)が短かくなり、従
って水分の吸湿、あるいは高温下における信頼性が低く
なるおそれがある。
In addition, by embedding the tip of the internal lead in the resin sheet, the actual length of the internal lead (distance from the outer edge of the resin sheet to the outer edge of the surrounding sealing resin) is shortened, which reduces moisture absorption. , or reliability at high temperatures may decrease.

本発明の目的は、従来技術の欠点を克服し、薄型で量産
に適し、かつ基板への実装時の信頼性の高い樹脂封止型
半導体装置を提供することにある。
An object of the present invention is to overcome the drawbacks of the prior art and provide a resin-sealed semiconductor device that is thin, suitable for mass production, and highly reliable when mounted on a substrate.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的のうち、装置の信頼性の向上、つまり樹脂クラ
ック発生の防止と、薄型化については、従来型リードフ
レームに見られたタブ、あるいはそれに類する索子搭載
部を排除し、素子とリードの側面どうしを接合し1両者
を同一面内に配置することにより、達成される。
Among the above objectives, in order to improve the reliability of the device, that is, to prevent the occurrence of resin cracks, and to reduce the thickness of the device, tabs or similar cable mounting parts found in conventional lead frames are eliminated, and the elements and leads are This is achieved by joining the side surfaces and arranging both sides in the same plane.

また、同装置の製造とその量産化については、リードフ
レームの反素子搭載方向の表面に一時的に耐熱性粘着テ
ープ等の仲介間接物(以下、テープと称す)を適用し、
素子を搭載、接合後にテープを除去するという製造方法
をとることにより。
In addition, in order to manufacture and mass-produce the same device, we temporarily applied an intermediary material such as heat-resistant adhesive tape (hereinafter referred to as tape) to the surface of the lead frame in the direction opposite to the element mounting direction.
By using a manufacturing method in which the tape is removed after the elements are mounted and bonded.

達成される。achieved.

〔作用〕[Effect]

本発明の樹脂封止型半導体装置の製造方法によれば、接
合用樹脂が硬化した後、テープを除去するため、素子と
リードの側面どうしが、両者下部を同一面で形成したま
ま接合することができる。
According to the method for manufacturing a resin-sealed semiconductor device of the present invention, since the tape is removed after the bonding resin has hardened, the sides of the element and the lead can be bonded with their lower portions being formed on the same surface. Can be done.

また、本発明の樹脂封止型半導体装置によれば、タブを
省略したことで、実装時に応力が集中するタブ下コーナ
部が存在しなくなり、しかも、従来のタブの位置に搭載
された素子についても、下面のコーナ部はリードとの接
合用樹脂が充満しているため、リードと同一面で一体化
した構造となり、周端な応力の集中は起こらず、従って
樹脂クラックは生じず、しかも、装置が薄型化される。
Furthermore, according to the resin-sealed semiconductor device of the present invention, since the tab is omitted, there is no lower corner of the tab where stress is concentrated during mounting. Also, since the bottom corner part is filled with the resin for bonding with the lead, it has a structure that is integrated with the lead on the same surface, and there is no concentration of stress at the peripheral edge, so no resin cracks occur. The device becomes thinner.

〔実施例〕〔Example〕

以下1本発明の実施例を、図面によって説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は、本発明の樹脂封止型半導体装置の部分断面斜
視図、第2図は同幅方向断面図である。
FIG. 1 is a partial cross-sectional perspective view of a resin-sealed semiconductor device of the present invention, and FIG. 2 is a cross-sectional view of the same in the width direction.

従来、リードフレーム中央部に位置していたダブ(第1
7図−2y)を排除し、同部に素子1を直接搭載、その
側面と、素子1を包囲している内部リード2の先端部側
面と接合用樹脂3にて接合されており、素子1下面とリ
ード2下面は同一面に形成されている。そして、その他
必要な工程を完了した後、封止用樹脂4にてそれらを封
止、成形したものである6上2図に示した通り、タブを
排除したことでタブ下コーナ部(第171fi−8)は
存在しなくなり、従って樹脂クラックの発生を防止でき
ると同時に、装置を少なくともタブのIIメさ分だけ薄
型化できる。
Conventionally, the dove (first
7-2y) is removed, and the element 1 is mounted directly on the same part, and its side surface and the side surface of the tip end of the internal lead 2 surrounding the element 1 are joined with the bonding resin 3, and the element 1 The lower surface and the lower surface of the lead 2 are formed on the same surface. After completing other necessary steps, they are sealed and molded with a sealing resin 4.6 As shown in Figure 2 above, by eliminating the tab, the bottom corner of the tab (171st fi. -8) no longer exists, and therefore, the occurrence of resin cracks can be prevented, and at the same time, the device can be made thinner by at least the width of the tab II.

次に、第3図〜第7図によって本装置の製造方法の概略
を説明する。予め用意されたリードフレーム2に、リー
ドフレーム2と素子を一時的に仮固定するための、例え
ば耐熱性粘着テープ等のテープ5をリードフレーム2に
添付する(第3図)。
Next, the outline of the manufacturing method of this device will be explained with reference to FIGS. 3 to 7. A tape 5 such as a heat-resistant adhesive tape is attached to the lead frame 2 prepared in advance for temporarily fixing the lead frame 2 and the element (FIG. 3).

次にテープ5の素子搭載部5aに接合用樹脂3を塗布す
る(第4図)0次に同部に素子lを搭載する(第5図)
。この時、素子の搭載方向に外力を加えることにより、
素子直下に塗布された接合用樹脂3は、その圧力で素子
外周方向へ押し出されるため、素子直下部からは排除さ
れ1周囲のリード側面に付着する(第6図)。なお、こ
の際に索子直下部に製造上、止むを得ない程度の接合用
樹脂が残留しても、その樹脂の厚さは従来のタブよりも
圧倒的に薄いため、装置の薄型化という点において問題
はなく、またリードから同樹脂にかけて下面が同一面で
形成されるという点で変わりないため、樹脂クラック発
生の防止についても問題はない。そして同樹脂3が硬化
した後、テープ5を除去し、ワイヤボンディングを行う
。ワイヤボンディングの方法については、サーモソニッ
クボンディング法、あるいは超音波ボンディング法を用
いれば、150℃以下の温度でよいため、接合用樹脂は
、例えばエポキシ樹脂程度で十分耐えうる。またその際
には、熱伝導性の良い素子裏面に直接加熱治具が接触す
るため、それに至るまでのプレヒート工程が不要となる
。その後、装置周囲を封止用樹脂4にて封止、成形する
(第7図)。
Next, apply the bonding resin 3 to the element mounting part 5a of the tape 5 (Fig. 4). Next, mount the element 1 on the same part (Fig. 5).
. At this time, by applying an external force in the mounting direction of the element,
The bonding resin 3 applied directly under the element is pushed out toward the outer periphery of the element by the pressure, so that it is removed from directly below the element and adheres to the side surfaces of the leads around 1 (FIG. 6). At this time, even if a certain amount of bonding resin remains directly under the cord due to manufacturing reasons, the thickness of the resin is overwhelmingly thinner than that of conventional tabs, so it is possible to make the device thinner. There is no problem in this respect, and there is no difference in the fact that the lower surface from the lead to the resin is formed on the same surface, so there is no problem in preventing the occurrence of resin cracks. After the resin 3 is cured, the tape 5 is removed and wire bonding is performed. As for the wire bonding method, if a thermosonic bonding method or an ultrasonic bonding method is used, a temperature of 150° C. or lower may be used, so that a bonding resin of, for example, epoxy resin can be used. Furthermore, at that time, the heating jig comes into direct contact with the back surface of the element, which has good thermal conductivity, so a preheating process leading up to that point is not necessary. Thereafter, the periphery of the device is sealed and molded with a sealing resin 4 (FIG. 7).

この時のテープの除去については、接合用樹脂の硬化後
であれば、素子からリードにかけての接合強度も十分で
、特に慎重さを要するような工程ではないことが実験に
より実証されている。また、予めテープ、あるいは素子
やリードフレームに、例えばワセリン等の離型剤を塗布
しておくことで、テープの除去はより容易に行えるよう
になり、あるいは薬品、熱等により同テープを溶解除去
しても良い。ところで、テープは粘着性のものとは限ら
ず、例えばセロファンを、静電気等を利用してリードフ
レームに添付しても良い。
Experiments have demonstrated that the tape removal at this time is not a process that requires particular caution, as the bonding strength from the element to the lead is sufficient if the bonding resin is cured. In addition, by applying a release agent such as vaseline to the tape or to the element or lead frame in advance, the tape can be removed more easily, or the tape can be dissolved and removed using chemicals, heat, etc. You may do so. By the way, the tape is not limited to adhesive tape; for example, cellophane may be attached to the lead frame using static electricity or the like.

また1本製造工程の順序については、例えば、リードフ
レーム、及び素子をテープ上に配置した後に、リードフ
レームと素子の隣接部間に接合用樹脂を注入する等、多
少の変更があっても最終的には同等の効果が得られる。
In addition, regarding the order of the manufacturing process for one piece, for example, after placing the lead frame and element on the tape, the bonding resin is injected between the adjacent parts of the lead frame and element, etc. Even if there are some changes, the final Generally speaking, the same effect can be obtained.

第8図〜第10図は、本発明の樹脂封止型半導体MIF
?の、主にリードフレームについての応用実施例であり
、特に、接合用樹脂の付着面積を太きくし、リードと素
子の接合強度を高めることに狙いを置いたものである。
FIG. 8 to FIG. 10 show the resin-sealed semiconductor MIF of the present invention.
? This is an application example mainly for lead frames, and is particularly aimed at increasing the bonding area of the bonding resin and increasing the bonding strength between the lead and the element.

まず、第8図は、内部リードのテープ添付側に傾斜2a
を設けたものである6ただし、回部は平面とは限らない
。第9図は、内部リード先端部を、反テープ添付方向に
向けて曲面化したものである。ただしこれも回部は曲面
とは限らない。第10図は、内部リード先端部の厚さ(
高さ)を、素子のそれと同じにしたものである。ただし
、両者のそれは必ずしも同じである必要はない。
First, FIG. 8 shows an inclined 2a on the tape attachment side of the internal lead.
However, the round part is not necessarily flat. In FIG. 9, the tip of the internal lead is curved in the direction opposite to the tape attachment direction. However, the round part is not necessarily a curved surface. Figure 10 shows the thickness of the tip of the internal lead (
height) is the same as that of the element. However, the two do not necessarily have to be the same.

第11図は、接合用樹脂の塗布範囲を、素子1とリード
2の隣接部のみに限定したもので、6は素子外形、7は
装置外形をそれぞれ表す。このよ ・うな塗布形状をと
ることにより、素子1を外力を加えながら搭載した際、
接合用樹脂3aの付着範囲が必要な部分のみに限られる
効果があると同時に、テープ表面の粘着部に素子1が直
接付着するため、軟かい樹脂中に搭載するのに比べ1位
置決め精度が向上し、かつ、素子直下部の残留樹脂を少
くすることができる。第12図はその時の接合用樹脂の
状態を表すもので、3a−2の破線部が残留樹脂部であ
り、前述した通り特に影響を及ぼすものではない。
In FIG. 11, the application range of the bonding resin is limited to only the adjacent portions of the element 1 and the leads 2, and 6 represents the outer shape of the element, and 7 represents the outer shape of the device. By adopting this coating shape, when element 1 is mounted while applying an external force,
This has the effect of limiting the adhesion range of the bonding resin 3a to only the necessary areas, and at the same time, since the element 1 is directly attached to the adhesive part of the tape surface, the positioning accuracy of the element 1 is improved compared to mounting it in soft resin. Moreover, the residual resin directly below the element can be reduced. FIG. 12 shows the state of the bonding resin at that time, and the broken line portion 3a-2 is the residual resin portion, which does not have any particular influence as described above.

第14図、第16図は、前述製造方法において。FIG. 14 and FIG. 16 show the above manufacturing method.

テープ5を各装置ごと個別に添付し、第7図で示した除
去工程を省略して封止、成形した樹脂封止型半導体装置
の幅方向断面図である。第13図。
8 is a cross-sectional view in the width direction of a resin-sealed semiconductor device in which a tape 5 is individually attached to each device and sealed and molded without the removal step shown in FIG. 7. FIG. Figure 13.

第15図にそれぞれの場合のテープの添付形状を示す。FIG. 15 shows the attachment shape of the tape in each case.

一般に同テープは従来のタブに比べかなり薄いので前述
残留樹脂同様、目的達成に関して特に支障はない。
Generally, this tape is much thinner than conventional tabs, so like the residual resin mentioned above, there is no particular problem in achieving the purpose.

なお、以上実施例の各回においては、SOJ(Smal
l 0utline J−bend package)
タイプのみを列挙したが、その他、例えばD I P 
(DualIuline Package) 、あるい
は4方向に外部リードを持ツQ F P (Quad 
Flat Package)等にも、容易に応用可能で
あることは言うまでもない。
In addition, in each of the above examples, SOJ (Small
l 0utline J-bend package)
Although only the types are listed, there are other types, such as D.I.P.
(Dual Line Package), or Q F P (Quad Line Package) with external leads in four directions.
Needless to say, the present invention can be easily applied to flat packages, etc.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、リフロ時の高温中でも封止樹脂中に周
端に応力の集中する部分が存在しないため、樹脂クラッ
クの発生を防止できるとともに従来型に比べ10%以上
の薄型化が可能となる。
According to the present invention, there is no part of the sealing resin where stress is concentrated at the peripheral edge even at high temperatures during reflow, so it is possible to prevent the occurrence of resin cracks and to reduce the thickness by 10% or more compared to conventional types. Become.

また、本発明の前述装置の製造方法によれば、前述の装
置を、高精度で容易、かつ多量に製造することができる
Further, according to the method of manufacturing the above-mentioned device of the present invention, the above-mentioned device can be easily manufactured in large quantities with high precision.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の樹脂封止型半導体装置実施例部分断面
斜視図、第2図は同幅方向断面図、第3図、第4図、第
5図、第6図及び第7図は夫々同装置製造方法、第8図
、第9図及び第10図は夫夫同装置リード関係応用実施
例幅方向断面図、第11図及び第12図は夫々同装置接
合用樹脂塗布形状応用実施例と素子搭載後の樹脂形状を
表すリードフレーム平面図、第13図、第15図は同装
置のテープ関係応用実施例を表すリードフレーム平面図
、第14図及び第16図は同装置幅方向断面図、第17
図は従来の樹脂封止型半導体装置幅方向断面図である。 1・・・素子、2・・・リード、あるいはリードフレー
ム、2a・・・内部リード傾斜部、2b・・・同曲面部
、2c・・・同異厚部、2y・・・タブ、2z・・・リ
ード、3゜3a・・・接合用樹脂、3a−1,3a−2
・・・素子搭載後の樹脂形状、4・・・封止用樹脂、5
,5a。 5b・・・テープ、6・・・素子外形、7・・・装置外
形。 第13 図    員、4図 第15図      第16m 5久、b−、−4目別4くイ丁(7:ブーツ゛第17図 3z−−一捺着荊 3−−−7)゛Tコー7舒
FIG. 1 is a partial cross-sectional perspective view of an embodiment of the resin-sealed semiconductor device of the present invention, FIG. 2 is a cross-sectional view in the same width direction, and FIGS. 3, 4, 5, 6, and 7 are 8, 9 and 10 are cross-sectional views in the width direction of an applied example of the lead-related relationship of the same device, and FIGS. 11 and 12 respectively show an applied example of the same device's bonding resin coating shape. Figures 13 and 15 are plan views of a lead frame showing an example and the shape of the resin after mounting an element, Figures 13 and 15 are plan views of a lead frame showing examples of tape-related applications of the device, and Figures 14 and 16 are in the width direction of the device. Cross-sectional view, No. 17
The figure is a cross-sectional view in the width direction of a conventional resin-sealed semiconductor device. DESCRIPTION OF SYMBOLS 1...Element, 2...Lead or lead frame, 2a...Internal lead inclined part, 2b...Same curved surface part, 2c...Same thickness part, 2y...Tab, 2z. ...Lead, 3゜3a...Joining resin, 3a-1, 3a-2
... Resin shape after mounting the element, 4... Sealing resin, 5
, 5a. 5b...Tape, 6...Element outer shape, 7...Device outer shape. Fig. 13 Member, 4 Fig. 15 Fig. 16m 5 long, b-, -4 stitches 4 pieces (7: Boots゛Fig. 17 3z--One stamp 3--7)゛T code 7 Shu

Claims (1)

【特許請求の範囲】[Claims] 1、半導体素子(以下、素子と称す)、素子と外部との
電気接続を行うためのリードの集合体、及び素子とリー
ドとの電気接続を行うためのワイヤを備え、これらを樹
脂で封止することにより成形した樹脂封止型半導体装置
において、接合用樹脂により素子とリードフレームの側
面どうしを接合し、封止用樹脂で半導体装置を封止、成
形したことを特徴とする樹脂封止型半導体装置。
1. Equipped with a semiconductor element (hereinafter referred to as an element), an assembly of leads for electrical connection between the element and the outside, and wires for electrical connection between the element and the leads, and sealed with resin. A resin-sealed semiconductor device molded by bonding the sides of an element and a lead frame using a bonding resin, and sealing and molding the semiconductor device with the sealing resin. Semiconductor equipment.
JP63044389A 1988-02-29 1988-02-29 Resin-encapsulated semiconductor device Pending JPH01220464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63044389A JPH01220464A (en) 1988-02-29 1988-02-29 Resin-encapsulated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63044389A JPH01220464A (en) 1988-02-29 1988-02-29 Resin-encapsulated semiconductor device

Publications (1)

Publication Number Publication Date
JPH01220464A true JPH01220464A (en) 1989-09-04

Family

ID=12690157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63044389A Pending JPH01220464A (en) 1988-02-29 1988-02-29 Resin-encapsulated semiconductor device

Country Status (1)

Country Link
JP (1) JPH01220464A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391916A (en) * 1990-04-06 1995-02-21 Hitachi, Ltd. Resin sealed type semiconductor device
JPH0855952A (en) * 1994-08-16 1996-02-27 Nec Kyushu Ltd Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391916A (en) * 1990-04-06 1995-02-21 Hitachi, Ltd. Resin sealed type semiconductor device
US5635756A (en) * 1990-04-06 1997-06-03 Hitachi, Ltd. Semiconductor device, lead frame therefor and memory card to provide a thin structure
JPH0855952A (en) * 1994-08-16 1996-02-27 Nec Kyushu Ltd Semiconductor device and manufacture thereof

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