JPH01181420A - Proximity exposure apparatus - Google Patents
Proximity exposure apparatusInfo
- Publication number
- JPH01181420A JPH01181420A JP63002985A JP298588A JPH01181420A JP H01181420 A JPH01181420 A JP H01181420A JP 63002985 A JP63002985 A JP 63002985A JP 298588 A JP298588 A JP 298588A JP H01181420 A JPH01181420 A JP H01181420A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photomask
- mask
- exposure apparatus
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、その表面に7オトレジストを塗布した基板
上へフォトマスク上のパターンを露光するために用いら
れる露光装置に関し、殊に、マスクと基板とを微小間隙
だけ隔てて平行に保持した状態で露光を行うプロキシミ
ティ露光装置に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to an exposure apparatus used for exposing a pattern on a photomask onto a substrate whose surface is coated with a photoresist, and particularly relates to an exposure apparatus used for exposing a pattern on a photomask onto a substrate whose surface is coated with a photoresist. The present invention relates to a proximity exposure apparatus that performs exposure while holding the substrate parallel to the substrate with a small gap between them.
(従来の技術)
この種の露光装置としては、従来より例えば第2図に示
すものが知られている(光工学ハンドフック第682頁
朝倉書店 昭和61年2月発行)。(Prior Art) As an exposure apparatus of this type, for example, the one shown in FIG. 2 is conventionally known (Optical Engineering Hand Hook, p. 682, published by Asakura Shoten, February 1986).
それは基板101とフォトマスク106とを微小間隙だ
け隔てて平木に保持し、露光光学系110による平行な
照射光で基板101の表面に塗布した7オトレジスト上
にフォトマスク上のパターンを露光するように構成され
ている。The substrate 101 and the photomask 106 are held on a flat board with a minute gap between them, and the pattern on the photomask is exposed onto the photoresist coated on the surface of the substrate 101 using parallel irradiation light from the exposure optical system 110. It is configured.
(発明が解決しようとする課題)
ところで、近年では業界の要請から基板が大型化する傾
向にあり、これに伴ってフォトマスクも大サイズのもの
が用いられるようになってきでいる。ちなみに、例えば
液晶表示装置の基板にあっては300關X300mm以
上の大きさになるものもある。(Problems to be Solved by the Invention) In recent years, there has been a tendency for substrates to become larger due to industry demands, and accordingly, larger-sized photomasks have also come to be used. For example, some substrates for liquid crystal display devices have a size of 300 mm x 300 mm or more.
しかるに、上記従来例の如く基板101及びフォトマス
ク106を水平に保持した状態で露光する場合には、第
3図に示すように基板101は基板ホルダ102の上面
に沿って平面状に保持されるものの、ガラス板で形成さ
れたフォトマスク106は自重により仮想線状に撓み、
基板101とフォトマスク106との間隙が中央部では
小さく、周辺部では大きくなり、その結果パターン焼付
時の解像度が周辺部で低下する。基板101とフォトマ
スク106を接触させない条件下においては、フォトマ
スク106の撓み量が大きくなる程、基板101とフォ
トマスク106との間隙を大きく設定しなければならず
、周辺部での解像度はさらに低下することになる。However, when exposing the substrate 101 and the photomask 106 while being held horizontally as in the conventional example, the substrate 101 is held flat along the top surface of the substrate holder 102 as shown in FIG. However, the photomask 106 formed of a glass plate bends in an imaginary line shape due to its own weight.
The gap between the substrate 101 and the photomask 106 is small at the center and wide at the periphery, and as a result, the resolution during pattern printing is reduced at the periphery. Under conditions where the substrate 101 and the photomask 106 are not in contact with each other, the larger the amount of deflection of the photomask 106, the larger the gap between the substrate 101 and the photomask 106 must be set, and the resolution at the periphery becomes even worse. This will result in a decline.
(課題を解決するための手段)
本発明は上記問題点を解決するためになされたもので次
のように構成される。(Means for Solving the Problems) The present invention has been made to solve the above problems and is constructed as follows.
即ち、基板を立設保持する基板ホルダと、フォトマスク
を基板に近接させて平行に立設保持するマスクホルダと
、基板の表面に対して垂直に平行光を照射してマスク・
パターンを露光する露光光学系とを具備して成り、フォ
トマスク及び基板を立設配置した状態で露光するように
構成したことを特徴とするものである。In other words, there is a substrate holder that holds the substrate upright, a mask holder that holds the photomask close to and parallel to the substrate, and a mask holder that irradiates parallel light perpendicularly to the surface of the substrate.
The apparatus is characterized in that it is equipped with an exposure optical system that exposes a pattern, and is configured to perform exposure with a photomask and a substrate placed upright.
(作 用)
本発明では、基板及びフォトマスクをそれぞれのホルダ
で立設保持した状態でプロキシミティ露光するので、従
来例のようなフォトマスクの自重による撓みはなくなる
。これにより、フォトマスクの撓みを考慮した間隙を設
定する必要がなく、解像度低下の問題は解消する。(Function) In the present invention, since proximity exposure is performed with the substrate and photomask held upright by their respective holders, the photomask does not bend due to its own weight as in the conventional example. Thereby, there is no need to set a gap in consideration of the deflection of the photomask, and the problem of reduced resolution is resolved.
(実 施 例)
第1図は本発明に係るプロキシミティ露光装置の概要図
である。(Example) FIG. 1 is a schematic diagram of a proximity exposure apparatus according to the present invention.
この露光装置は、例えば液晶表示装置用基板の製造工程
において用いられるもので、基板1を立設保持する基板
ホノげ2と、フォトマスク6を基板1に近接させて平行
に立設保持するマスクホルダ7と、基板1の表面に対し
て垂直に、平行な焼付光を照射してマスク・パターンを
基板1上に露光する露光光学系10とを具備して成る。This exposure apparatus is used, for example, in the manufacturing process of substrates for liquid crystal display devices, and includes a substrate holder 2 that holds a substrate 1 upright, and a mask 6 that holds a photomask 6 upright in parallel with the substrate 1. It comprises a holder 7 and an exposure optical system 10 that irradiates parallel printing light perpendicular to the surface of the substrate 1 to expose a mask pattern onto the substrate 1.
基板ホルダ2には強制排気手段5に連通した負圧室3が
内部に形成され、平担に形成した基板保持面S、に多数
の吸着孔4をあけて負圧室3と連通して成り、基板1を
吸着孔4で負圧吸引することにより基板保持面S1に沿
って平担にかっ立設保持するように構成されている。A negative pressure chamber 3 communicating with a forced exhaust means 5 is formed inside the substrate holder 2, and a large number of suction holes 4 are formed in a flat substrate holding surface S to communicate with the negative pressure chamber 3. By suctioning the substrate 1 under negative pressure through the suction hole 4, the substrate 1 is held flat along the substrate holding surface S1.
マスクホルダ7はフォトマスク6の周縁部を保持するマ
スク保持面S2を有し、マスク保持面S2には、強制排
気手段9に連通した吸着溝8が形成されて成り、フォト
マスク6を吸着溝8で負圧吸引することによりマスク保
持面S2に沿って平担に、かつ、基板1に近接させて、
フォトマスク6を立設保持できるように構成されている
。The mask holder 7 has a mask holding surface S2 that holds the peripheral edge of the photomask 6, and a suction groove 8 that communicates with the forced exhaust means 9 is formed in the mask holding surface S2. By suctioning negative pressure at step 8, the mask is placed flat along the mask holding surface S2 and close to the substrate 1,
It is configured so that the photomask 6 can be held upright.
露光光学系10は従来例と同様、紫外線照射用のクセノ
ンランプLSと、クセノンランプLSからの光を集光す
る凹面鏡EMと、凹面鏡EMの第2焦点近傍に配置され
た7ライアイレンズO8と、フライフイレンズO8とフ
ォトマスク6との間に配置されたコリメータレンズCL
と、−組の光路反転ミラーM1・M2とを具備して成り
、二次光源たる7ライアイレンズO8の射出瞳の像を被
照射面たるフォトマスク6上に形成することで可能な限
り被照射面6上での照度分布を均一にし、がっ、被照射
面6に対して垂直な平行光でマスク・パターンを焼付け
るように構成されている。As in the conventional example, the exposure optical system 10 includes a xenon lamp LS for ultraviolet irradiation, a concave mirror EM that collects light from the xenon lamp LS, and a 7-ray eye lens O8 arranged near the second focal point of the concave mirror EM. , a collimator lens CL disposed between the fly fly lens O8 and the photomask 6
and a set of optical path reversing mirrors M1 and M2, and forms an image of the exit pupil of the 7-ray eye lens O8, which is a secondary light source, on the photomask 6, which is the irradiated surface, to minimize the exposure as much as possible. The illuminance distribution on the irradiated surface 6 is made uniform, and the mask pattern is printed using parallel light perpendicular to the irradiated surface 6.
なお、上記実施例では液晶表示装置用基板の製造工程に
おいて用いられるプロキシミティ露光装置として説明し
たが、本発明はこれに限るものではなく、前記したよう
に、フォトマスクの自重による撓みが問題となるプロキ
シミティ露光装置において広〈実施し得ることは云うま
でもない。Note that although the above embodiment has been described as a proximity exposure apparatus used in the manufacturing process of a substrate for a liquid crystal display device, the present invention is not limited to this. It goes without saying that this method can be widely implemented in a variety of proximity exposure apparatuses.
(発明の効果)
以上の説明で明らかなように、本発明によればフォトマ
スクの自重による撓みなくして基板とフォトマスクとの
間隙を所定の値に維持することができ、大型化する基板
においても解像度の低下を防ぐことができる。(Effects of the Invention) As is clear from the above explanation, according to the present invention, the gap between the substrate and the photomask can be maintained at a predetermined value without bending due to the photomask's own weight, and it is possible to This can also prevent a decrease in resolution.
【図面の簡単な説明】
第1図は本発明に係るプロキシミティ露光装置の概要図
、第2図は従来のプロキシミティ露光装置を示す概要図
、第3図は問題となるフォトマスクの撓みを誇張して示
す説明図である。
1・・・基板、 2・・・基板ホルダ、 6・・・
フォトマスク、 7・・・マスクホルダ、 101i
光光学系。[Brief Description of the Drawings] Fig. 1 is a schematic diagram of a proximity exposure apparatus according to the present invention, Fig. 2 is a schematic diagram of a conventional proximity exposure apparatus, and Fig. 3 is a schematic diagram showing the problem of photomask deflection. It is an explanatory diagram shown in an exaggerated manner. 1... Board, 2... Board holder, 6...
Photomask, 7...mask holder, 101i
Optical optical system.
Claims (1)
基板に近接させて平行に立設保持するマスクホルダと、
基板の表面に対して垂直に平行光を照射しでマスク・パ
ターンを露光する露光光学系とを具備して成り、フォト
マスク及び基板を立設配置した状態で露光するように構
成したことを特徴とするプロキシミティ露光装置1. A substrate holder that holds the substrate upright; a mask holder that holds the photomask upright in parallel with the substrate;
It is characterized by being equipped with an exposure optical system that exposes the mask pattern by irradiating parallel light perpendicularly to the surface of the substrate, and configured to perform exposure while the photomask and substrate are placed upright. Proximity exposure equipment
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63002985A JPH01181420A (en) | 1988-01-08 | 1988-01-08 | Proximity exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63002985A JPH01181420A (en) | 1988-01-08 | 1988-01-08 | Proximity exposure apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01181420A true JPH01181420A (en) | 1989-07-19 |
Family
ID=11544662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63002985A Pending JPH01181420A (en) | 1988-01-08 | 1988-01-08 | Proximity exposure apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01181420A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03200317A (en) * | 1989-12-27 | 1991-09-02 | Rohm Co Ltd | Mask alignment device |
KR20010046478A (en) * | 1999-11-12 | 2001-06-15 | 구자홍 | Vertical facing type exposure apparatus |
US6509142B2 (en) * | 1998-05-19 | 2003-01-21 | Orc Technologies, Inc. | Apparatus and method for exposing substrates |
WO2005015616A1 (en) * | 2003-08-12 | 2005-02-17 | Tadahiro Ohmi | Electronic beam exposure device and exposure method |
KR100990282B1 (en) * | 2007-11-30 | 2010-10-26 | 호야 가부시키가이샤 | Inspection apparatus, inspection method, manufacturing method, proximity exposure photomask and pattern transfer method of proximity exposure photomask |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61179537A (en) * | 1985-02-04 | 1986-08-12 | Nec Corp | X-ray exposure equipment |
JPS62150720A (en) * | 1985-12-24 | 1987-07-04 | Toshiba Corp | Surface treatment equipment applying radiation light |
JPS62171122A (en) * | 1986-01-23 | 1987-07-28 | Mitsubishi Electric Corp | X-ray exposure apparatus |
-
1988
- 1988-01-08 JP JP63002985A patent/JPH01181420A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61179537A (en) * | 1985-02-04 | 1986-08-12 | Nec Corp | X-ray exposure equipment |
JPS62150720A (en) * | 1985-12-24 | 1987-07-04 | Toshiba Corp | Surface treatment equipment applying radiation light |
JPS62171122A (en) * | 1986-01-23 | 1987-07-28 | Mitsubishi Electric Corp | X-ray exposure apparatus |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03200317A (en) * | 1989-12-27 | 1991-09-02 | Rohm Co Ltd | Mask alignment device |
US6509142B2 (en) * | 1998-05-19 | 2003-01-21 | Orc Technologies, Inc. | Apparatus and method for exposing substrates |
KR20010046478A (en) * | 1999-11-12 | 2001-06-15 | 구자홍 | Vertical facing type exposure apparatus |
WO2005015616A1 (en) * | 2003-08-12 | 2005-02-17 | Tadahiro Ohmi | Electronic beam exposure device and exposure method |
KR100990282B1 (en) * | 2007-11-30 | 2010-10-26 | 호야 가부시키가이샤 | Inspection apparatus, inspection method, manufacturing method, proximity exposure photomask and pattern transfer method of proximity exposure photomask |
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