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JPH01176955U - - Google Patents

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Publication number
JPH01176955U
JPH01176955U JP7177088U JP7177088U JPH01176955U JP H01176955 U JPH01176955 U JP H01176955U JP 7177088 U JP7177088 U JP 7177088U JP 7177088 U JP7177088 U JP 7177088U JP H01176955 U JPH01176955 U JP H01176955U
Authority
JP
Japan
Prior art keywords
photodetecting element
impurity
single crystal
crystal substrate
silicon single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7177088U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7177088U priority Critical patent/JPH01176955U/ja
Publication of JPH01176955U publication Critical patent/JPH01176955U/ja
Pending legal-status Critical Current

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の半導体光検出素子の一実施例
を示す断面構成図、第2図は従来例を示す断面図
、第3図は空乏層近傍での電子の移動状態を示す
模式図、第4図は従来の光検出素子の波長と感度
の関係を示す図である。 1…シリコン単結晶基板、2…p型層、3…絶
縁層、6…空乏層、10…凹部。
FIG. 1 is a cross-sectional configuration diagram showing one embodiment of the semiconductor photodetecting element of the present invention, FIG. 2 is a cross-sectional diagram showing a conventional example, and FIG. 3 is a schematic diagram showing the state of electron movement near the depletion layer. FIG. 4 is a diagram showing the relationship between wavelength and sensitivity of a conventional photodetecting element. DESCRIPTION OF SYMBOLS 1... Silicon single crystal substrate, 2... P-type layer, 3... Insulating layer, 6... Depletion layer, 10... Recessed part.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] n(またはp)型シリコン単結晶基板の表面の
一部にp(またはn)型の不純物を形成した光検
出素子において、前記不純物が形成された部分は
紫外線を吸収し赤外線を透過する程度の厚さに形
成したことを特徴とする半導体光検出素子。
In a photodetecting element in which a p (or n) type impurity is formed on a part of the surface of an n (or p) type silicon single crystal substrate, the portion where the impurity is formed absorbs ultraviolet rays and transmits infrared rays. A semiconductor photodetecting element characterized in that it is formed to a thick thickness.
JP7177088U 1988-06-01 1988-06-01 Pending JPH01176955U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7177088U JPH01176955U (en) 1988-06-01 1988-06-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7177088U JPH01176955U (en) 1988-06-01 1988-06-01

Publications (1)

Publication Number Publication Date
JPH01176955U true JPH01176955U (en) 1989-12-18

Family

ID=31296960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7177088U Pending JPH01176955U (en) 1988-06-01 1988-06-01

Country Status (1)

Country Link
JP (1) JPH01176955U (en)

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