JPH01139459U - - Google Patents
Info
- Publication number
- JPH01139459U JPH01139459U JP3555288U JP3555288U JPH01139459U JP H01139459 U JPH01139459 U JP H01139459U JP 3555288 U JP3555288 U JP 3555288U JP 3555288 U JP3555288 U JP 3555288U JP H01139459 U JPH01139459 U JP H01139459U
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- electrode film
- receiving
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
第１図および第２図は本考案の一実施例を示し
第１図は平面図、第２図は第１図のＸ―Ｘ′線断
面図である。第３図は本考案の他の実施例を示す
断面図、第４図は本考案をラインセンサに適用し
た例を示す平面図である。第５図は従来装置を示
す平面図である。
１……支持基板、２……第１電極膜、３……半
導体膜、４……第２電極膜、８……遮光層、１０
……受光部。
1 and 2 show one embodiment of the present invention, with FIG. 1 being a plan view and FIG. 2 being a sectional view taken along the line XX' in FIG. 1. FIG. 3 is a sectional view showing another embodiment of the present invention, and FIG. 4 is a plan view showing an example in which the present invention is applied to a line sensor. FIG. 5 is a plan view showing a conventional device. DESCRIPTION OF SYMBOLS 1... Support substrate, 2... First electrode film, 3... Semiconductor film, 4... Second electrode film, 8... Light shielding layer, 10
……Light receiving section.
Claims (1)
一方が透光性の第１電極膜及び第２電極膜で挟持
した膜状受光素子を支持基板の絶縁表面に配置し
、上記受光素子の受光出力を第１電極膜及び第２
電極膜と各々連なる出力端子から導出する受光装
置であつて、上記半導体膜の一部を遮光層で被覆
して非受光部を形成し、この非受光部に形成され
た接合容量および受光部の接合容量にて端子間容
量を構成することを特徴とする受光装置。 A film-like light receiving element in which a semiconductor film including a semiconductor photoactive layer is sandwiched between a first electrode film and a second electrode film, at least one of which is transparent, is disposed on an insulating surface of a supporting substrate, and the light receiving output of the light receiving element is The first electrode film and the second electrode film
The light-receiving device is led out from output terminals that are connected to electrode films, and a part of the semiconductor film is covered with a light-shielding layer to form a non-light-receiving part, and the junction capacitance formed in this non-light-receiving part and the light-receiving part are A light receiving device characterized in that an inter-terminal capacitance is formed by a junction capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3555288U JPH01139459U (en) | 1988-03-17 | 1988-03-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3555288U JPH01139459U (en) | 1988-03-17 | 1988-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01139459U true JPH01139459U (en) | 1989-09-22 |
Family
ID=31262197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3555288U Pending JPH01139459U (en) | 1988-03-17 | 1988-03-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01139459U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177964A (en) * | 1983-03-28 | 1984-10-08 | Fujitsu Ltd | Image-sensor |
-
1988
- 1988-03-17 JP JP3555288U patent/JPH01139459U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177964A (en) * | 1983-03-28 | 1984-10-08 | Fujitsu Ltd | Image-sensor |