JPH01128536A - Probe for measuring semiconductor element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device measuring probe used for measuring a semiconductor device provided on a semiconductor substrate, and in particular,
The present invention relates to a technique that is effective when applied to a probe for measuring power supply terminals of semiconductor devices.

[Conventional technology]

When probe testing a semiconductor element provided on a semiconductor substrate, a bypass capacitor and a load capacitor are added to the substrate of the probe card.

[Problem that the invention seeks to solve]

However, as a result of examining this technology, one inventor found that
As shown in Figure 3, the semiconductor device to be measured (semiconductor substrate)
Since the distance from 8 to the bypass capacitor 12 added on the probe card 4 (ll = 30 m) becomes long, the inductance between it becomes large, and the noise and We have discovered a problem in that the measured values of the high frequency characteristics of the semiconductor device under test become inaccurate because the absorption of electrical energy is insufficient.

An object of the present invention is to provide a technique that can shorten the distance from a semiconductor element to be measured (semiconductor substrate) to a bypass capacitor.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device measuring probe that can accurately measure and improve the high frequency characteristics of a semiconductor device (semiconductor substrate) to be measured.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means for solving problems]

Outline of typical inventions disclosed in this application is as follows.

That is, in a semiconductor device measuring probe used for measuring a semiconductor device provided on a semiconductor substrate, the probe needle electrode itself is provided with a bypass capacitor.

[For production]

According to the above-mentioned means, by providing a bypass capacitor on the probe needle electrode itself, noise and electrical energy in the probe needle electrode can be sufficiently absorbed, and the noise and electric energy can be sufficiently absorbed from the semiconductor element to be measured (semiconductor substrate). Since the distance to the bypass capacitor can be reduced to zero,
The inductance between them can be reduced. Moreover, thereby, the high frequency characteristics of the semiconductor element to be measured (semiconductor substrate) can be accurately measured. As a result, the high frequency characteristics of the semiconductor device to be measured can be improved.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device measuring probe according to an embodiment of the present invention will be described below with reference to the drawings.

In addition, in all the episodes, parts having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.

FIG. 1 is a perspective view showing a schematic configuration of a probe needle electrode for semiconductor device measurement according to an embodiment of the present invention.

Is the needle-shaped probe for measuring semiconductor devices in this example? ! ! The pole is
As shown in Fig. 1, a probe needle electrode 1 is covered with a dielectric material 2, and a metal film (electrode of a bypass capacitor) is placed on top of the dielectric material 2.
3 is coated.

Generally speaking, from the principle of capacitors, f! 1 air capacity C
If E=permittivity, d=thickness, and S=partial area.

C [μF) = 8.855xtO-' xε·S/d.

If the dielectric 2 has a large dielectric constant.

Since the capacitor has a capacitance of C [μF], this capacitance C [μF] can serve as a bypass capacitor. Furthermore, by changing the dielectric 2, the capacitance value of the capacitor can be changed.

As the dielectric material 2, for example, porcelain having a dielectric constant te100 is used.

For example, tungsten is used as the material for the probe needle electrode N11l and the metal film 3.

Next, a case will be described in which a semiconductor device is measured using the probe needle-like electrode for semiconductor device measurement of this embodiment.

As shown in FIG. 2, the probe card 4 is connected to a semiconductor element (
(semiconductor substrate) is fixed to the head 6 of the tester 5. As a result, the bin 7 provided on the probe card 4 is inserted into a predetermined connector (not shown) provided on the tester side, and the tester 5 and the probe card 4 are electrically connected. Next, the probe needle-like electrode 1 and the semiconductor device to be measured 8 are connected via a wiring pattern.

As can be seen from the above description, according to this embodiment, by providing the bypass capacitor in the probe needle type H41 itself, the distance from the semiconductor device to be measured 8 to the bypass capacitor is the shortest distance (Q=O). Since it can be implemented and installed with
Noise and electrical energy in the probe needle electrode 1 can be sufficiently absorbed. Furthermore, since the inductance from the probe needle electrode 1 to the bypass capacitor can be reduced thereby, the high frequency characteristics of the semiconductor element to be measured (semiconductor substrate) can be accurately measured. As a result, the high frequency characteristics of the conductor element to be measured can be improved.

Above, the present invention was specifically explained using examples.
It goes without saying that the present invention is not limited to the embodiments described above, and can be modified in various ways without departing from the spirit thereof. [Effects of the Invention] The effects obtained by typical inventions disclosed in this application are briefly explained below.

Since the distance from the semiconductor element or semiconductor device to be measured to the bypass capacitor can be mounted at the shortest distance (Q = 0),
Noise and electrical energy in the probe needle electrode can be sufficiently absorbed.

Furthermore, since the inductance from the probe needle electrode to the bypass capacitor can be reduced, the high frequency characteristics of the semiconductor element (semiconductor substrate) to be measured can be accurately measured. As a result, the high frequency characteristics of the semiconductor device to be measured can be improved.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a schematic configuration of a probe needle-like electrode for semiconductor device measurement according to an embodiment of the present invention, and FIG. 2 shows a method of performing a probe using the probe needle-like electrode shown in FIG. Side view for explanation. FIG. 3 is an explanatory diagram for explaining the problems of the conventional probe for measuring semiconductor devices. In the figure, 1... probe needle electrode, 2... dielectric, 3
... Metal film, 4... Probe card (substrate), 5.
...Tester, 6...Head, 7...Pin, 8...
This is a semiconductor element (semiconductor substrate) to be measured.

Claims (1)

[Scope of Claims] 1. A semiconductor device measuring probe having a probe needle-like electrode used for measuring a semiconductor device provided on a semiconductor substrate, characterized in that the probe needle-like electrode itself is provided with a bypass capacitor. A probe for measuring semiconductor devices. 2. Semiconductor device measurement according to claim 1, characterized in that a probe needle-like electrode made of tungsten is coated with a dielectric made of ceramic, and a metal film made of tungsten is coated thereon. Probe for.