JPH01120794A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPH01120794A JPH01120794A JP62275766A JP27576687A JPH01120794A JP H01120794 A JPH01120794 A JP H01120794A JP 62275766 A JP62275766 A JP 62275766A JP 27576687 A JP27576687 A JP 27576687A JP H01120794 A JPH01120794 A JP H01120794A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- insulating layer
- layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 5
- 239000007789 gas Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910003071 TaON Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、スペースファクタ、表示品質に優れた平面デ
イスプレィが期待される薄膜ＥＬ素子に係り、特に、輝
度特性に優れた多色表示ＥＬ素子に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a thin film EL device that is expected to provide a flat display with excellent space factor and display quality, and in particular, to a multicolor display EL device with excellent brightness characteristics. Regarding.
交流電界を印加することによって発光する３膜ＥＬ素子
は、特開昭５０−１２９８９号、及び、特開昭５７−１
７２６９２号公報に記載のように、ガラス法板上に形成
された透明電極上に第一絶縁層、発光層、及び、第二絶
縁層が順次積層され、さらに、その上に透明電極と直交
するように背面電極が形成される構造になっている。特
開昭５０−１２９８９号では、絶縁層材料として、窒化
物を用い、発光層材料としてＺｎＳを用いたＥＬ素子の
発光特性や寿命特性の劣化を防止したことを特徴として
いる。また、特開昭５７−１７２６９２号公報では、絶
縁層材料とじてＴａ２０５を用い、発光層材料としてＺ
ｎＳやＺｎ５ｅ等を用いたＥＬ素子の低駆動電圧化を特
徴とする。A three-film EL device that emits light by applying an alternating current electric field is disclosed in Japanese Patent Application Laid-open No. 50-12989 and Japanese Patent Application Laid-open No. 57-1.
As described in Japanese Patent No. 72692, a first insulating layer, a light-emitting layer, and a second insulating layer are sequentially laminated on a transparent electrode formed on a glass plate, and a layer orthogonal to the transparent electrode is further laminated thereon. It has a structure in which a back electrode is formed like this. JP-A No. 50-12989 is characterized in that deterioration of the light emitting characteristics and life characteristics of an EL element using nitride as the insulating layer material and ZnS as the light emitting layer material is prevented. Furthermore, in JP-A-57-172692, Ta205 is used as the insulating layer material and Z is used as the emitting layer material.
It is characterized by lower driving voltage for EL elements using nS, Zn5e, etc.
上記従来技術は、発光層にＳｒＳ、または、ＣａＳを用
いた場合の発光輝度や寿命の点について考慮されておら
ず、発光層に付活剤を添加したＳｒＳやＣａＳを用いた
場合、輝度不足や時間の経過とともに輝度が低下してい
くという問題があった。すなわち、ＳｒＳ、または、Ｃ
ａＳを母体とする発光層上に第二絶縁層としてのＴ ａ
２０５膜をスパッタリング法で形成する時に、緻密で
絶縁特性の優れた絶縁層を得るために、スパッタリング
ガスとしてＡｒと０２の混合ガスが用いられる。The above-mentioned conventional technology does not take into account the luminance brightness and lifespan when SrS or CaS is used in the light emitting layer, and when SrS or CaS added with an activator is used in the light emitting layer, the brightness is insufficient. There is a problem in that the brightness decreases over time. That is, SrS or C
T a as a second insulating layer on the light emitting layer containing aS as a matrix.
When forming the 205 film by sputtering, a mixed gas of Ar and 02 is used as the sputtering gas in order to obtain a dense insulating layer with excellent insulation properties.
そのため、絶縁層形成過程の初期に基板が酸素プラズマ
にさらされ、発光層の表面が酸素イオンによる衝撃をう
けて酸化され、ＥＬ素子の輝度、及び寿令特性を悪くす
る原因となっていた。一方、絶縁層としてＳｉ３Ｎ４．
ＡＱＮ及びＢＮなどの窒化物を用いることにより、発光
層が酸化されるという問題は解消されるが、５ｉａＮ４
膜は誘電率が８と小さいため、駆動電圧が高くなるとい
う欠点があり、ＡＱＮ及びＢＮなどについては透過率が
低く、輝度低下の原因となっていた。Therefore, the substrate is exposed to oxygen plasma at the beginning of the process of forming the insulating layer, and the surface of the light emitting layer is bombarded with oxygen ions and oxidized, causing deterioration in the brightness and lifetime characteristics of the EL element. On the other hand, as an insulating layer, Si3N4.
By using nitrides such as AQN and BN, the problem of oxidation of the light emitting layer is solved, but 5iaN4
Since the film has a low dielectric constant of 8, it has the drawback of requiring a high driving voltage, and AQN, BN, and the like have low transmittance, causing a decrease in brightness.
本発明の目的は、多色表示ＥＬＤ、あるいは、フルカラ
ーＥＬＤに好適な、高輝度で輝度の経時変化のない優れ
た素子を安定して提供することにある。An object of the present invention is to stably provide an excellent element with high brightness and no change in brightness over time, which is suitable for a multicolor display ELD or a full color ELD.
上記目的は、基板上に形成された透明電極」二に第一絶
縁層、発光層、第二絶縁層及び背面電極が順次積層され
、この両電極間に交流電界を印加することによってＥＬ
発光を呈する薄膜ＥＬ素子において、ＳｒＳまたはＣａ
Ｓを母材とする発光層をサンドイッチ状にはさむ第−及
び第二絶縁層としてＴａ０Ｎ膜を用いるか、または、発
光層の両面に接するように薄いＴａｏＮ層を設け、他の
酸化物、窒化物及び酸窒化物などの絶縁層と組み合わせ
た構造にすることにより達成される。The above object is achieved by sequentially laminating a first insulating layer, a light emitting layer, a second insulating layer and a back electrode on a transparent electrode formed on a substrate, and applying an alternating current electric field between these two electrodes.
In thin film EL devices that emit light, SrS or Ca
Either TaON films are used as the first and second insulating layers sandwiching the light emitting layer with S as the base material, or a thin TaoN layer is provided so as to be in contact with both sides of the light emitting layer, and other oxides or nitrides are used. This is achieved by creating a structure in combination with an insulating layer such as oxynitride or oxynitride.
絶縁層として用いられるＴａ０Ｎは、Ａｒガス雰囲気中
でスパッタリングすることにより、透過率が高＜、シか
も、緻密で絶縁特性の優れた膜が得られる。そのため、
薄膜ＥＬ素子の絶縁層として用いる場合、ＳｒＳ、また
は、ＣａＳを母材とする発光層に対して、酸素イオンＷ
ｒ＠による酸化を防止できるので、素子の輝度が向上し
、輝度の劣化を防止することができる。By sputtering Ta0N used as the insulating layer in an Ar gas atmosphere, a film with high transmittance, high density, and excellent insulating properties can be obtained. Therefore,
When used as an insulating layer of a thin film EL device, oxygen ions W
Since oxidation due to r@ can be prevented, the brightness of the element can be improved and deterioration of brightness can be prevented.
以下、本発明の実施例について説明する。まず、第１図
及び第２図に本発明の構造を示し、その製作法を以下に
述べる。Examples of the present invention will be described below. First, the structure of the present invention is shown in FIGS. 1 and 2, and the manufacturing method thereof will be described below.
第１図に示すように、ガラス基板１上に透明電極である
Ｉ Ｔｏ （Ｉｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ） ２
をスパッタリング法、または、電子ビーム蒸着法により
、約２００ｎｍの厚さに形成する。得られるＩＴＯ膜の
シート抵抗は１０Ω／口以下、透過率は８５％以上であ
る。このＩＴＯ膜をフォトリソ技術によって所望の形状
にパターニングする。この上に、第一絶縁層としてＴａ
０Ｎ３を５００膜ｍの厚さに、Ａｒガス雰囲気中でＲＦ
スパッタリング法で形成した。なお、Ｔ ａ ＯＮ膜の
形成に際しては、マスクスパッタリング法を採用した。As shown in FIG. 1, a transparent electrode of I To (Indium Tin Oxide) 2 is placed on a glass substrate 1.
is formed to a thickness of about 200 nm by sputtering or electron beam evaporation. The resulting ITO film has a sheet resistance of 10 Ω/hole or less and a transmittance of 85% or more. This ITO film is patterned into a desired shape by photolithography. On top of this, Ta is used as a first insulating layer.
A 500 m thick film of 0N3 was RF-treated in an Ar gas atmosphere.
It was formed by sputtering method. Note that a mask sputtering method was used to form the T a ON film.
次に、この基板を電子ビーム蒸着装置に移し、発光層４
としてＳ ｒＳ ： ＣｅまたはＣａＳ：Ｅｕ膜をマス
ク蒸着した。蒸着時の基板温度は４５０℃とし、広原は
約６００ｎｍとした。次に、発光層４上に第一絶縁層３
と同じ条件で第二絶縁層５としてＴ ａ ＯＮ膜を５０
０膜ｍの厚さに形成した。Next, this substrate is transferred to an electron beam evaporation device, and the light emitting layer 4 is
A SrS:Ce or CaS:Eu film was deposited using a mask. The substrate temperature during vapor deposition was 450° C., and the Hirohara thickness was approximately 600 nm. Next, a first insulating layer 3 is placed on the light emitting layer 4.
A T a ON film was used as the second insulating layer 5 under the same conditions as
The film was formed to have a thickness of 0 m.
さらに、背面電極６としてＡｆｌを、ストライプ状のマ
スクを用いてＩＴＯ電極２と直交方向に、約２００ｎｍ
の厚さに蒸着した。この後、作製した素子を湿気から保
護するため、第１図には示していないが、乾燥した空気
雰囲気中で背面電極６上にガラス板を設置し、周囲を樹
脂で封止した。Furthermore, Afl was applied as the back electrode 6 using a striped mask in a direction orthogonal to the ITO electrode 2, with a thickness of about 200 nm.
It was deposited to a thickness of . Thereafter, in order to protect the manufactured element from moisture, although not shown in FIG. 1, a glass plate was placed on the back electrode 6 in a dry air atmosphere, and the surrounding area was sealed with resin.
第２図も本発明の構造を示しであるが、第１図との相違
点は、第−絶縁層と第二絶縁層の構造をＴａ０Ｎ膜とＴ
ａｚＯ６膜との組み合わせにした点である。この絶縁層
は発光層４に接するように、Ｔａ０Ｎ５３．５を形成し
、両型極側にＴａｚｏδ膜７，８をＡｒと０２の混合ガ
ス雰囲気中でＲＦスパッタリング法で形成した。なお、
それぞれの膜厚はＴ ａ ＯＮ層３，５が５０膜ｍ、Ｔ
ａｚＯａ層７．８が４５０膜ｍである。FIG. 2 also shows the structure of the present invention, but the difference from FIG.
This is due to the combination with the azO6 film. This insulating layer was formed of Ta0N53.5 so as to be in contact with the light emitting layer 4, and Tazo δ films 7 and 8 were formed on both electrode sides by RF sputtering in a mixed gas atmosphere of Ar and 02. In addition,
The respective film thicknesses are 50 m for T a ON layers 3 and 5, and T
The azOa layer 7.8 has a thickness of 450 m.
第３図は従来の素子の構造を示すが、この素子の絶縁層
７，８はＴａ２０６膜を使用しており、膜形成時のスパ
ッタリングガスには、Ａｒと０２の混合ガスを用いた。FIG. 3 shows the structure of a conventional device, in which the insulating layers 7 and 8 are made of Ta206 film, and a mixed gas of Ar and 02 is used as the sputtering gas during film formation.
本素子を作製後５ＫＨｚ正弦波の電圧を印加した状態で
ＥＬ輝度の連続測定を行なうと、第４図に示すように、
輝度は時間の経過とともに低下していくが、第１図、及
び、第２図に示す本発明の素子構成を用いれば、輝度は
電圧を印加した直後に若干低下する現象が見られるが、
その後の低下現象は認められず安定な輝度特性を示す。After fabricating this device, we continuously measured the EL brightness while applying a 5KHz sine wave voltage, as shown in Figure 4.
Luminance decreases with the passage of time, but if the device configuration of the present invention shown in FIGS.
No subsequent decrease phenomenon was observed, and stable brightness characteristics were exhibited.
なお、第２図に示す素子構成のＴａ０Ｎ ＷＪの膜厚の
設定にあたっては、ＴａｏＮ層とＴａ ｘｏ ３層の全
膜厚を５００膜ｍになるようにＴａ０ＮＷｊの膜厚を種
々変えた素子を作製し、二十時間電圧印加後の輝度を測
定した結果、第５図に示すようにＴａｏＮ層の膜厚が厚
くなる程、輝度の劣化が少なくなり、５０膜ｍ以上にす
ることにより輝度の劣化を防ぐことができる。In setting the film thickness of the Ta0N WJ with the device configuration shown in Fig. 2, devices were fabricated with various film thicknesses of the Ta0NWj so that the total film thickness of the TaoN layer and the three Taxo layers was 500 m. However, as a result of measuring the brightness after applying a voltage for 20 hours, as shown in Figure 5, the thicker the TaoN layer, the less the deterioration in brightness. can be prevented.
従って、本実施例によれば発光層の酸化を防止でき、高
輝度のＥＬ素子を提供することができる。Therefore, according to this embodiment, oxidation of the light emitting layer can be prevented and a high brightness EL element can be provided.
本発明によれば、輝度の経時変化を防止でき、高輝度の
薄膜ＥＬ素子が得られる。According to the present invention, it is possible to prevent luminance from changing over time, and a high-luminance thin film EL element can be obtained.
第１図は本発明の一実施例の薄膜ＥＬ素子の構造図、第
２図は本発明の他の実施例の薄１１ｉＥＬ素子の構造図
、第３図は従来の薄膜ＥＬｉ子の構造図、第４図は従来
の薄膜ＥＬ素子の輝度の劣化を示すグラフ、第５図はＴ
ａｏＮ層の膜厚を変えた時の輝度特性図である。
１・・・ガラス基板、２・・・透明電極（ＩＴＯ）、３
・・・第一絶縁層（ＴａＯＮ）、４・・・発光層（Ｓｒ
Ｓ：Ｃｅ。
ＣａＳ ： Ｅｕ）、５−第二絶縁層（ＴａＯＮ）、６
・・・背面電極、７・・・第一絶縁層（ＴａｚＯ５）
。
８・・・第二絶縁層（Ｔａｚ○５）。FIG. 1 is a structural diagram of a thin film EL device according to an embodiment of the present invention, FIG. 2 is a structural diagram of a thin 11i EL device according to another embodiment of the present invention, and FIG. 3 is a structural diagram of a conventional thin film EL device. Figure 4 is a graph showing the luminance deterioration of a conventional thin film EL element, and Figure 5 is a graph showing the deterioration of brightness of a conventional thin film EL element.
FIG. 6 is a brightness characteristic diagram when the thickness of the aoN layer is changed. 1... Glass substrate, 2... Transparent electrode (ITO), 3
. . . first insulating layer (TaON), 4 . . . light emitting layer (Sr
S:Ce. CaS: Eu), 5-second insulating layer (TaON), 6
... Back electrode, 7... First insulating layer (TazO5)
. 8... Second insulating layer (Taz○5).
Claims (4)
、二つの絶縁層にサンドイツチ状にはさまれた発光層を
設けた薄膜ＥＬ素子において、前記二つの絶縁層をタン
タルオキシナイトライドで構成することを特徴とする薄
膜ＥＬ素子。1. In a thin film EL element in which a light emitting layer is sandwiched between two insulating layers in a sandwich-like manner between a pair of electrodes, at least one of which is a transparent electrode, the two insulating layers are made of tantalum oxynitride. Characteristic thin film EL element.
、窒化物及び酸窒化物からなる二層構造で、かつ、発光
層側にタンタルオキシナイトライド層が接する構造をも
つことを特徴とする薄膜ＥＬ素子。2. In claim 1, the insulating layer has a two-layer structure consisting of tantalum oxynitride and other oxides, nitrides, and oxynitrides, and the tantalum oxynitride layer is in contact with the light emitting layer side. A thin film EL device characterized by having the following properties.
ることを特徴とする薄膜ＥＬ素子。3. The thin film EL device according to claim 2, wherein the tantalum oxynitride film has a thickness of 50 nm or more.
ｒＴｉＯ＿３を組み合わせであることを特徴とする薄膜
ＥＬ素子。4. Claim 2, wherein the two-layer structure insulating layer comprises tantalum oxynitride and S.
A thin film EL device characterized by being a combination of rTiO_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62275766A JPH01120794A (en) | 1987-11-02 | 1987-11-02 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62275766A JPH01120794A (en) | 1987-11-02 | 1987-11-02 | Thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01120794A true JPH01120794A (en) | 1989-05-12 |
Family
ID=17560092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62275766A Pending JPH01120794A (en) | 1987-11-02 | 1987-11-02 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01120794A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19632277C2 (en) * | 1995-08-11 | 2002-06-13 | Denso Corp | Dielectric thin film, a thin film electroluminescent device using the same, and methods of manufacturing the electroluminescent device |
-
1987
- 1987-11-02 JP JP62275766A patent/JPH01120794A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19632277C2 (en) * | 1995-08-11 | 2002-06-13 | Denso Corp | Dielectric thin film, a thin film electroluminescent device using the same, and methods of manufacturing the electroluminescent device |
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