JP7630226B2 - Resin film, coverlay film, circuit board, resin-coated copper foil, metal-clad laminate, multi-layer circuit board, polyimide and adhesive resin composition - Google Patents
Resin film, coverlay film, circuit board, resin-coated copper foil, metal-clad laminate, multi-layer circuit board, polyimide and adhesive resin composition Download PDFInfo
- Publication number
- JP7630226B2 JP7630226B2 JP2019164507A JP2019164507A JP7630226B2 JP 7630226 B2 JP7630226 B2 JP 7630226B2 JP 2019164507 A JP2019164507 A JP 2019164507A JP 2019164507 A JP2019164507 A JP 2019164507A JP 7630226 B2 JP7630226 B2 JP 7630226B2
- Authority
- JP
- Japan
- Prior art keywords
- component
- polyimide
- resin
- diamine
- dimer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920005989 resin Polymers 0.000 title claims description 146
- 239000011347 resin Substances 0.000 title claims description 146
- 229920001721 polyimide Polymers 0.000 title claims description 120
- -1 circuit board Substances 0.000 title claims description 88
- 239000010408 film Substances 0.000 title claims description 87
- 239000000203 mixture Substances 0.000 title claims description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 66
- 239000011889 copper foil Substances 0.000 title claims description 59
- 239000004840 adhesive resin Substances 0.000 title claims description 34
- 229920006223 adhesive resin Polymers 0.000 title claims description 34
- 239000012787 coverlay film Substances 0.000 title claims description 32
- 239000009719 polyimide resin Substances 0.000 title description 8
- 239000004642 Polyimide Substances 0.000 claims description 104
- 150000004985 diamines Chemical class 0.000 claims description 86
- 239000010410 layer Substances 0.000 claims description 83
- 239000000539 dimer Substances 0.000 claims description 74
- 239000012790 adhesive layer Substances 0.000 claims description 61
- 239000002253 acid Substances 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 33
- 125000003277 amino group Chemical group 0.000 claims description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 claims description 18
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 18
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 15
- 238000005227 gel permeation chromatography Methods 0.000 claims description 13
- 125000000468 ketone group Chemical group 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 230000003750 conditioning effect Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 150000007519 polyprotic acids Polymers 0.000 claims description 8
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 claims description 5
- 125000000524 functional group Chemical group 0.000 claims description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 239000000047 product Substances 0.000 description 25
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 239000000243 solution Substances 0.000 description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 20
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 16
- 229920005575 poly(amic acid) Polymers 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 13
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 235000014113 dietary fatty acids Nutrition 0.000 description 11
- 239000000194 fatty acid Substances 0.000 description 11
- 229930195729 fatty acid Natural products 0.000 description 11
- 150000004665 fatty acids Chemical class 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 229920002799 BoPET Polymers 0.000 description 8
- 229910000831 Steel Inorganic materials 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 230000009477 glass transition Effects 0.000 description 8
- 239000010959 steel Substances 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 125000005462 imide group Chemical group 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 4
- 102000012688 DDA1 Human genes 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 238000006482 condensation reaction Methods 0.000 description 4
- 101150044395 dda1 gene Proteins 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- GRGBENNNGZARRZ-UHFFFAOYSA-N dodecanedihydrazide Chemical compound NNC(=O)CCCCCCCCCCC(=O)NN GRGBENNNGZARRZ-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229920006259 thermoplastic polyimide Polymers 0.000 description 4
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 4
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 125000004018 acid anhydride group Chemical group 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004448 titration Methods 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- CFQZKFWQLAHGSL-FNTYJUCDSA-N (3e,5e,7e,9e,11e,13e,15e,17e)-18-[(3e,5e,7e,9e,11e,13e,15e,17e)-18-[(3e,5e,7e,9e,11e,13e,15e)-octadeca-3,5,7,9,11,13,15,17-octaenoyl]oxyoctadeca-3,5,7,9,11,13,15,17-octaenoyl]oxyoctadeca-3,5,7,9,11,13,15,17-octaenoic acid Chemical compound OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C CFQZKFWQLAHGSL-FNTYJUCDSA-N 0.000 description 2
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- KWOIWTRRPFHBSI-UHFFFAOYSA-N 4-[2-[3-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=CC(C(C)(C)C=2C=CC(N)=CC=2)=CC=1C(C)(C)C1=CC=C(N)C=C1 KWOIWTRRPFHBSI-UHFFFAOYSA-N 0.000 description 2
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 2
- MQAHXEQUBNDFGI-UHFFFAOYSA-N 5-[4-[2-[4-[(1,3-dioxo-2-benzofuran-5-yl)oxy]phenyl]propan-2-yl]phenoxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC2=CC=C(C=C2)C(C)(C=2C=CC(OC=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)C)=C1 MQAHXEQUBNDFGI-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 2
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000447 dimerizing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229960004488 linolenic acid Drugs 0.000 description 2
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 235000021313 oleic acid Nutrition 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000012488 sample solution Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- ZNGSVRYVWHOWLX-KHFUBBAMSA-N (1r,2s)-2-(methylamino)-1-phenylpropan-1-ol;hydrate Chemical compound O.CN[C@@H](C)[C@H](O)C1=CC=CC=C1.CN[C@@H](C)[C@H](O)C1=CC=CC=C1 ZNGSVRYVWHOWLX-KHFUBBAMSA-N 0.000 description 1
- MDJZGXRFYKPSIM-JCYAYHJZSA-N (2r,3r)-2,3-dihydroxybutanedihydrazide Chemical compound NNC(=O)[C@H](O)[C@@H](O)C(=O)NN MDJZGXRFYKPSIM-JCYAYHJZSA-N 0.000 description 1
- BHQCQFFYRZLCQQ-UHFFFAOYSA-N (3alpha,5alpha,7alpha,12alpha)-3,7,12-trihydroxy-cholan-24-oic acid Natural products OC1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 BHQCQFFYRZLCQQ-UHFFFAOYSA-N 0.000 description 1
- SNVRDQORMVVQBI-OWOJBTEDSA-N (e)-but-2-enedihydrazide Chemical compound NNC(=O)\C=C\C(=O)NN SNVRDQORMVVQBI-OWOJBTEDSA-N 0.000 description 1
- SNVRDQORMVVQBI-UPHRSURJSA-N (z)-but-2-enedihydrazide Chemical compound NNC(=O)\C=C/C(=O)NN SNVRDQORMVVQBI-UPHRSURJSA-N 0.000 description 1
- YTCGLFCOUJIOQH-UHFFFAOYSA-N 1,3,4-oxadiazole-2,5-diamine Chemical compound NC1=NN=C(N)O1 YTCGLFCOUJIOQH-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical class FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 1
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 1
- JZWGLBCZWLGCDT-UHFFFAOYSA-N 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound ClC1=CC(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O JZWGLBCZWLGCDT-UHFFFAOYSA-N 0.000 description 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- MXPYJVUYLVNEBB-UHFFFAOYSA-N 2-[2-(2-carboxybenzoyl)oxycarbonylbenzoyl]oxycarbonylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(O)=O MXPYJVUYLVNEBB-UHFFFAOYSA-N 0.000 description 1
- LGWROMGRXCZCLA-UHFFFAOYSA-N 2-hydroxybutanedihydrazide Chemical compound NNC(=O)CC(O)C(=O)NN LGWROMGRXCZCLA-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical class C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- NEWFQHAOPHWBPR-UHFFFAOYSA-N 2-methylidenebutanedihydrazide Chemical compound NNC(=O)CC(=C)C(=O)NN NEWFQHAOPHWBPR-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- POXPSTWTPRGRDO-UHFFFAOYSA-N 3-[4-(3-aminophenyl)phenyl]aniline Chemical group NC1=CC=CC(C=2C=CC(=CC=2)C=2C=C(N)C=CC=2)=C1 POXPSTWTPRGRDO-UHFFFAOYSA-N 0.000 description 1
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- NQZOFDAHZVLQJO-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 NQZOFDAHZVLQJO-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- FYLGFBUSMXTESP-UHFFFAOYSA-N 3-[4-[9-[4-(3-aminophenoxy)phenyl]fluoren-9-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 FYLGFBUSMXTESP-UHFFFAOYSA-N 0.000 description 1
- YSMXOEWEUZTWAK-UHFFFAOYSA-N 3-[4-[[4-(3-aminophenoxy)phenyl]methyl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(CC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 YSMXOEWEUZTWAK-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- QGRZMPCVIHBQOE-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)CC(C)=C2C(C(O)=O)C(C(O)=O)CC(C)=C21 QGRZMPCVIHBQOE-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical group CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- TZARWMRCCSKGFP-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3-tetrafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(CF)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 TZARWMRCCSKGFP-UHFFFAOYSA-N 0.000 description 1
- HESXPOICBNWMPI-UHFFFAOYSA-N 4-[2-[4-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=C(C(C)(C)C=2C=CC(N)=CC=2)C=CC=1C(C)(C)C1=CC=C(N)C=C1 HESXPOICBNWMPI-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- ZNVDOKOOMPHOSP-UHFFFAOYSA-N 4-amino-n-(4-amino-2-methoxyphenyl)benzamide Chemical compound COC1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 ZNVDOKOOMPHOSP-UHFFFAOYSA-N 0.000 description 1
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 1
- IIEKUGPEYLGWQQ-UHFFFAOYSA-N 5-[4-(4-amino-2-methylpentyl)phenyl]-4-methylpentan-2-amine Chemical compound CC(N)CC(C)CC1=CC=C(CC(C)CC(C)N)C=C1 IIEKUGPEYLGWQQ-UHFFFAOYSA-N 0.000 description 1
- DUZDWKQSIJVSMY-UHFFFAOYSA-N 5-[4-(6-amino-2-methylhexan-2-yl)phenyl]-5-methylhexan-1-amine Chemical compound NCCCCC(C)(C)C1=CC=C(C(C)(C)CCCCN)C=C1 DUZDWKQSIJVSMY-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000004135 Bone phosphate Substances 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical class N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004380 Cholic acid Substances 0.000 description 1
- 238000005698 Diels-Alder reaction Methods 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- OIMYTXTZHYOELS-UHFFFAOYSA-N NC1=CC2=C(N=C(O2)OC2=CC=C(C=C2)N)C=C1 Chemical compound NC1=CC2=C(N=C(O2)OC2=CC=C(C=C2)N)C=C1 OIMYTXTZHYOELS-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 235000019484 Rapeseed oil Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- CXISKMDTEFIGTG-UHFFFAOYSA-N [4-(1,3-dioxo-2-benzofuran-5-carbonyl)oxyphenyl] 1,3-dioxo-2-benzofuran-5-carboxylate Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(OC=2C=CC(OC(=O)C=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)=O)=C1 CXISKMDTEFIGTG-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- IBVAQQYNSHJXBV-UHFFFAOYSA-N adipic acid dihydrazide Chemical compound NNC(=O)CCCCC(=O)NN IBVAQQYNSHJXBV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009435 amidation Effects 0.000 description 1
- 238000007112 amidation reaction Methods 0.000 description 1
- 229940064734 aminobenzoate Drugs 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- MRSWDOKCESOYBI-UHFFFAOYSA-N anthracene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC2=C1 MRSWDOKCESOYBI-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- IKWQWOFXRCUIFT-UHFFFAOYSA-N benzene-1,2-dicarbohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C(=O)NN IKWQWOFXRCUIFT-UHFFFAOYSA-N 0.000 description 1
- UTTHLMXOSUFZCQ-UHFFFAOYSA-N benzene-1,3-dicarbohydrazide Chemical compound NNC(=O)C1=CC=CC(C(=O)NN)=C1 UTTHLMXOSUFZCQ-UHFFFAOYSA-N 0.000 description 1
- ALHNLFMSAXZKRC-UHFFFAOYSA-N benzene-1,4-dicarbohydrazide Chemical compound NNC(=O)C1=CC=C(C(=O)NN)C=C1 ALHNLFMSAXZKRC-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- UDSAIICHUKSCKT-UHFFFAOYSA-N bromophenol blue Chemical compound C1=C(Br)C(O)=C(Br)C=C1C1(C=2C=C(Br)C(O)=C(Br)C=2)C2=CC=CC=C2S(=O)(=O)O1 UDSAIICHUKSCKT-UHFFFAOYSA-N 0.000 description 1
- HCOMFAYPHBFMKU-UHFFFAOYSA-N butanedihydrazide Chemical compound NNC(=O)CCC(=O)NN HCOMFAYPHBFMKU-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical class [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- BHQCQFFYRZLCQQ-OELDTZBJSA-N cholic acid Chemical compound C([C@H]1C[C@H]2O)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(O)=O)C)[C@@]2(C)[C@@H](O)C1 BHQCQFFYRZLCQQ-OELDTZBJSA-N 0.000 description 1
- 229960002471 cholic acid Drugs 0.000 description 1
- 235000019416 cholic acid Nutrition 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical class Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- ZWLIYXJBOIDXLL-UHFFFAOYSA-N decanedihydrazide Chemical compound NNC(=O)CCCCCCCCC(=O)NN ZWLIYXJBOIDXLL-UHFFFAOYSA-N 0.000 description 1
- KXGVEGMKQFWNSR-UHFFFAOYSA-N deoxycholic acid Natural products C1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 KXGVEGMKQFWNSR-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical group C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- SWRGUMCEJHQWEE-UHFFFAOYSA-N ethanedihydrazide Chemical compound NNC(=O)C(=O)NN SWRGUMCEJHQWEE-UHFFFAOYSA-N 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- OXAGUPFRAIIDLT-UHFFFAOYSA-N heptanedihydrazide Chemical compound NNC(=O)CCCCCC(=O)NN OXAGUPFRAIIDLT-UHFFFAOYSA-N 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000000879 imine group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Chemical class 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical class [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000199 molecular distillation Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZWLFGLCGZUVIEA-UHFFFAOYSA-N nonanedihydrazide Chemical compound NNC(=O)CCCCCCCC(=O)NN ZWLFGLCGZUVIEA-UHFFFAOYSA-N 0.000 description 1
- HATIEXJZXOLRAO-UHFFFAOYSA-N octanedihydrazide Chemical compound NNC(=O)CCCCCCC(=O)NN HATIEXJZXOLRAO-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical class O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- LGYJSPMYALQHBL-UHFFFAOYSA-N pentanedihydrazide Chemical compound NNC(=O)CCCC(=O)NN LGYJSPMYALQHBL-UHFFFAOYSA-N 0.000 description 1
- AVRVTTKGSFYCDX-UHFFFAOYSA-N perylene-1,2,7,8-tetracarboxylic acid Chemical compound C1=CC(C2=C(C(C(=O)O)=CC=3C2=C2C=CC=3)C(O)=O)=C3C2=C(C(O)=O)C(C(O)=O)=CC3=C1 AVRVTTKGSFYCDX-UHFFFAOYSA-N 0.000 description 1
- RVRYJZTZEUPARA-UHFFFAOYSA-N phenanthrene-1,2,9,10-tetracarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C3=C(C(O)=O)C(C(=O)O)=CC=C3C2=C1 RVRYJZTZEUPARA-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000012424 soybean oil Nutrition 0.000 description 1
- 239000003549 soybean oil Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000003784 tall oil Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- RKFCDGOVCBYSEW-AUUKWEANSA-N tmeg Chemical compound COC=1C(OC)=CC(C(OC(C=2OC)=C34)=O)=C3C=1OC(=O)C4=CC=2O[C@@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O RKFCDGOVCBYSEW-AUUKWEANSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1082—Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Laminated Bodies (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Description
本発明は、プリント配線板等の回路基板において接着剤として有用なポリイミド及びその利用に関する。 The present invention relates to polyimides that are useful as adhesives for circuit boards such as printed wiring boards, and their uses.
近年、電子機器の小型化、軽量化、省スペース化の進展に伴い、薄く軽量で、可撓性を有し、屈曲を繰り返しても優れた耐久性を持つフレキシブルプリント配線板(FPC;Flexible Printed Circuits)の需要が増大している。FPCは、限られたスペースでも立体的かつ高密度の実装が可能であるため、例えば、HDD、DVD、携帯電話等の電子機器の可動部分の配線や、ケーブル、コネクター等の部品にその用途が拡大しつつある。 In recent years, with the progress of miniaturization, weight saving, and space saving of electronic devices, there is an increasing demand for flexible printed circuits (FPCs) that are thin, lightweight, flexible, and have excellent durability even when repeatedly bent. Because FPCs allow three-dimensional and high-density mounting even in a limited space, their applications are expanding to include wiring for moving parts of electronic devices such as HDDs, DVDs, and mobile phones, as well as components such as cables and connectors.
上述した高密度化に加えて、機器の高性能化が進んだことから、伝送信号の高周波化への対応も必要とされている。情報処理や情報通信においては、大容量情報の伝送・処理するために伝送周波数を高くする取り組みが行われており、プリント基板材料は絶縁層の薄化と絶縁層の誘電特性の改善による伝送損失の低下が求められている。今後は、高周波化に対応するFPCや接着剤が求められ、伝送損失の低減が重要となる。 In addition to the increased density mentioned above, the increasing performance of devices has also necessitated the need to accommodate higher frequencies for transmission signals. In the fields of information processing and communications, efforts are being made to increase transmission frequencies in order to transmit and process large volumes of information, and printed circuit board materials are being required to reduce transmission loss by making insulating layers thinner and improving the dielectric properties of the insulating layers. In the future, FPCs and adhesives that can handle higher frequencies will be required, and reducing transmission loss will be important.
ところで、ポリイミドを主成分とする接着層に関する技術として、ダイマー酸(二量体脂肪酸)などの脂肪族ジアミンから誘導されるジアミン化合物を原料とするポリイミドと、少なくとも2つの第1級アミノ基を官能基として有するアミノ化合物と、を反応させて得られる架橋ポリイミド樹脂を、カバーレイフィルムの接着剤層に適用することが提案されている(例えば、特許文献1)。また、このようなポリイミドとエポキシ樹脂などの熱硬化性樹脂と架橋剤とを併用した樹脂組成物を、銅張積層板に適用することが提案されている(例えば、特許文献2)。しかし、特許文献1及び2では、原料に含まれるダイマー酸から誘導されるダイマージアミン以外の副生成物の影響については、何ら考慮されていない。 As a technique for an adhesive layer mainly composed of polyimide, it has been proposed to apply a crosslinked polyimide resin obtained by reacting a polyimide made from a diamine compound derived from an aliphatic diamine such as dimer acid (dimer fatty acid) with an amino compound having at least two primary amino groups as functional groups to the adhesive layer of a coverlay film (for example, Patent Document 1). It has also been proposed to apply a resin composition using such a polyimide in combination with a thermosetting resin such as an epoxy resin and a crosslinking agent to a copper-clad laminate (for example, Patent Document 2). However, Patent Documents 1 and 2 do not take into consideration the influence of by-products other than the dimer diamine derived from the dimer acid contained in the raw material.
ダイマー酸は、例えば大豆油脂肪酸、トール油脂肪酸、菜種油脂肪酸等の天然の脂肪酸及びこれらを精製したオレイン酸、リノール酸、リノレン酸、エルカ酸等を原料に用いてディールス-アルダー反応させて得られる二量体化脂肪酸であり、ダイマー酸から誘導される多塩基酸化合物は、原料の脂肪酸や三量体化以上の脂肪酸の組成物として得られることが知られている(例えば、特許文献3)。 Dimer acids are dimerized fatty acids obtained by the Diels-Alder reaction using natural fatty acids such as soybean oil fatty acids, tall oil fatty acids, rapeseed oil fatty acids, and the like, as well as oleic acid, linoleic acid, linolenic acid, erucic acid, and the like, which are refined from these, as raw materials. It is known that polybasic acid compounds derived from dimer acids are obtained as compositions of the raw fatty acids and trimerized or higher fatty acids (for example, Patent Document 3).
ポリイミドを主成分とする樹脂の物性を制御する手段として、ポリイミドの前駆体であるポリアミド酸又はポリイミドの分子量を制御することは重要である。しかしながら、ダイマージアミンを原料として適用する場合、ダイマー酸から誘導されるダイマージアミン以外の副生成物を含む状態で使用される。このような副生成物は、ポリイミドの分子量の制御を困難とするほか、広域の周波数での誘電特性や、その湿度依存性に影響を及ぼす。 As a means of controlling the physical properties of resins whose main component is polyimide, it is important to control the molecular weight of the polyimide precursor, polyamic acid, or polyimide. However, when dimer diamine is used as a raw material, it is used in a state that contains by-products other than dimer diamine derived from dimer acid. Such by-products not only make it difficult to control the molecular weight of the polyimide, but also affect its dielectric properties over a wide frequency range and its humidity dependency.
本発明の目的は、誘電特性の改善によって電子機器の高周波化への対応を可能としつつ、湿度依存性が抑制された誘電特性を有する樹脂フィルム及びポリイミドを提供することにある。 The object of the present invention is to provide a resin film and polyimide having dielectric properties that are suppressed in dependence on humidity while improving the dielectric properties to enable electronic devices to handle higher frequencies.
本発明の樹脂フィルムは、樹脂成分としてポリイミドを含有する樹脂フィルムであり、前記ポリイミドが、テトラカルボン酸無水物成分と、ジアミン成分と、を反応させてなるものであり、前記ジアミン成分が全ジアミン成分に対し、ダイマー酸の二つの末端カルボン酸基が1級アミノメチル基又はアミノ基に置換されてなるダイマージアミンを主成分とするダイマージアミン組成物を40モル%以上含有する。
そして、本発明の樹脂フィルムは、下記の構成I及びIIを満たすものである。
The resin film of the present invention is a resin film containing a polyimide as a resin component, the polyimide being obtained by reacting a tetracarboxylic anhydride component with a diamine component, and the diamine component contains 40 mol % or more of a dimer diamine composition mainly composed of a dimer diamine in which two terminal carboxylic acid groups of a dimer acid are substituted with primary aminomethyl groups or amino groups, relative to the total diamine component.
The resin film of the present invention satisfies the following configurations I and II.
I)下記の数式(i)、
E1=√ε1×Tanδ1 ・・・(i)
[ここで、ε1は、23℃、50%RHの恒温恒湿条件(常態)のもと24時間調湿後に、スプリットポスト誘電体共振器(SPDR)により測定される10GHzにおける誘電率を示し、Tanδ1は、23℃、50%RHの恒温恒湿条件のもと24時間調湿後に、SPDRにより測定される10GHzにおける誘電正接を示す]
に基づき算出される、23℃、50%RHの恒温恒湿条件のもと24時間調湿後の10GHzにおける誘電特性を示す指標であるE1値が0.010以下であること。
I) Formula (i) below:
E 1 =√ε 1 ×Tanδ 1 ...(i)
[wherein ε 1 denotes the dielectric constant at 10 GHz measured by a split post dielectric resonator (SPDR) after 24 hours of conditioning under constant temperature and humidity conditions (normal state) of 23° C. and 50% RH, and Tan δ 1 denotes the dielectric loss tangent at 10 GHz measured by a SPDR after 24 hours of conditioning under constant temperature and humidity conditions of 23° C. and 50% RH]
The E1 value, which is an index of dielectric properties at 10 GHz after 24 hours of conditioning under constant temperature and humidity conditions of 23°C and 50% RH, calculated based on the above formula, is 0.010 or less.
II)下記の数式(ii)、
E2=√ε2×Tanδ2 ・・・(ii)
[ここで、ε2は、23℃、24時間吸水後に、SPDRにより測定される10GHzにおける誘電率を示し、Tanδ2は、23℃、24時間吸水後に、SPDRによって測定される10GHzにおける誘電正接を示す]
に基づき算出される、23℃、24時間吸水後の10GHzにおける誘電特性を示す指標であるE2値において、
前記E1値に対するE2値の比(E2/E1)が3.0~1.0の範囲内であること。
II) Formula (ii) below:
E 2 =√ε 2 ×Tan δ 2 ...(ii)
[where ε2 represents the dielectric constant at 10 GHz measured by SPDR after absorbing water at 23°C for 24 hours, and Tan δ2 represents the dielectric tangent at 10 GHz measured by SPDR after absorbing water at 23°C for 24 hours]
The E2 value is an index of dielectric properties at 10 GHz after absorbing water at 23°C for 24 hours, calculated based on the following:
The ratio of the E2 value to the E1 value ( E2 / E1 ) is within the range of 3.0 to 1.0.
なお、数式(i)、(ii)において、「√ε1」、「√ε2」は、それぞれ「ε1」、「ε2」の平方根を意味する。 In addition, in the formulas (i) and (ii), "√ε 1 " and "√ε 2 " respectively mean the square roots of "ε 1 " and "ε 2 ".
本発明のカバーレイフィルムは、接着剤層とカバーレイ用フィルム材層とを積層したカバーレイフィルムであって、前記接着剤層が、上記樹脂フィルムからなる。 The coverlay film of the present invention is a coverlay film in which an adhesive layer and a coverlay film material layer are laminated, and the adhesive layer is made of the above-mentioned resin film.
本発明の回路基板は、基材と、該基材上に形成された配線層と、該配線層を被覆する上記カバーレイフィルムと、を備えている。 The circuit board of the present invention comprises a substrate, a wiring layer formed on the substrate, and the above-mentioned coverlay film that covers the wiring layer.
本発明の樹脂付銅箔は、接着剤層と銅箔とを積層した樹脂付銅箔であって、前記接着剤層が、上記樹脂フィルムからなるものである。 The resin-coated copper foil of the present invention is a resin-coated copper foil formed by laminating an adhesive layer and a copper foil, and the adhesive layer is made of the above-mentioned resin film.
本発明の金属張積層板は、絶縁樹脂層と、前記絶縁樹脂層の少なくとも片側の面に積層された接着剤層と、前記接着剤層を介して前記絶縁樹脂層に積層された金属層と、を有する金属張積層板であって、前記接着剤層が、上記樹脂フィルムからなるものである。 The metal-clad laminate of the present invention is a metal-clad laminate having an insulating resin layer, an adhesive layer laminated on at least one surface of the insulating resin layer, and a metal layer laminated on the insulating resin layer via the adhesive layer, and the adhesive layer is made of the above-mentioned resin film.
本発明の多層回路基板は、積層された複数の絶縁樹脂層を含む積層体と、該積層体の内部に埋め込まれた1層以上の導体回路層と、を備えた多層回路基板である。本発明の多層回路基板は、前記複数の絶縁樹脂層のうちの少なくとも一層以上が、接着性を有するとともに前記導体回路層を被覆する接着剤層により形成されており、前記接着剤層が、上記樹脂フィルムからなるものである。 The multilayer circuit board of the present invention is a multilayer circuit board comprising a laminate including a plurality of laminated insulating resin layers, and one or more conductor circuit layers embedded inside the laminate. In the multilayer circuit board of the present invention, at least one of the plurality of insulating resin layers is formed of an adhesive layer that has adhesive properties and covers the conductor circuit layer, and the adhesive layer is made of the above-mentioned resin film.
本発明のポリイミドは、テトラカルボン酸無水物成分と、ジアミン成分と、を反応させてなるものであり、前記ジアミン成分が全ジアミン成分に対し、ダイマー酸の二つの末端カルボン酸基が1級アミノメチル基又はアミノ基に置換されてなるダイマージアミンを主成分とするダイマージアミン組成物を40モル%以上含有する。
本発明のポリイミドは、前記ダイマージアミン組成物に対するゲル浸透クロマトグラフィーを用いた測定によるクロマトグラムの面積パーセントで、下記成分(a)~(c);
(a)ダイマージアミン;
(b)炭素数10~40の範囲内にある一塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるモノアミン化合物;
(c)炭素数41~80の範囲内にある炭化水素基を有する多塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるアミン化合物(但し、前記ダイマージアミンを除く);
における前記成分(c)が2%以下である。
The polyimide of the present invention is obtained by reacting a tetracarboxylic anhydride component with a diamine component, and the diamine component contains 40 mol % or more of a dimer diamine composition mainly composed of a dimer diamine in which two terminal carboxylic acid groups of a dimer acid are substituted with primary aminomethyl groups or amino groups, relative to the total diamine component.
The polyimide of the present invention has the following components (a) to (c), in terms of area percentage of a chromatogram measured by gel permeation chromatography for the dimer diamine composition:
(a) dimer diamine;
(b) a monoamine compound obtained by substituting a terminal carboxylic acid group of a monobasic acid compound having 10 to 40 carbon atoms with a primary aminomethyl group or an amino group;
(c) Amine compounds obtained by substituting the terminal carboxylic acid group of a polybasic acid compound having a hydrocarbon group having 41 to 80 carbon atoms with a primary aminomethyl group or an amino group (excluding the above-mentioned dimer diamine);
The content of the component (c) in the composition is 2% or less.
本発明のポリイミドは、前記テトラカルボン酸無水物成分の全量に対して、3,3’,4,4’-ベンゾフェノンテトラカルボン酸二無水物(BTDA)を50モル%以上含有するものであってもよい。 The polyimide of the present invention may contain 50 mol % or more of 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA) based on the total amount of the tetracarboxylic anhydride component.
本発明の接着剤樹脂組成物は、下記(A)成分及び(B)成分、
(A)上記ポリイミド、及び
(B)少なくとも2つの第1級アミノ基を官能基として有するアミノ化合物、
を含み、
前記(A)成分中のBTDAから誘導されるBTDA残基のケトン基1モルに対して、前記第1級のアミノ基が合計で0.004モルから1.5モルの範囲内になるように前記(B)成分を含有する。
The adhesive resin composition of the present invention comprises the following components (A) and (B):
(A) the polyimide; and (B) an amino compound having at least two primary amino groups as functional groups.
Including,
The component (B) is contained so that the primary amino groups are contained in a total amount within a range of 0.004 mol to 1.5 mol per 1 mol of the ketone group of the BTDA residue derived from BTDA in the component (A).
本発明の樹脂フィルム及びポリイミドは、ダイマージアミン組成物におけるダイマージアミン以外のアミン化合物の含有量を制御しているので、誘電特性の湿度依存性が低く、安定性に優れている。従って、本発明の樹脂フィルム及びポリイミドは、例えば、高速信号伝送を必要とする電子機器において、FPC等の回路基板に特に好適に用いることができる。 The resin film and polyimide of the present invention have low humidity dependency of dielectric properties and excellent stability because the content of amine compounds other than dimer diamine in the dimer diamine composition is controlled. Therefore, the resin film and polyimide of the present invention can be particularly suitably used for circuit boards such as FPCs in electronic devices that require high-speed signal transmission.
以下、本発明の実施の形態について説明する。 The following describes an embodiment of the present invention.
<樹脂フィルム>
本実施の形態の樹脂フィルムは、樹脂成分を主要成分としてフィルム化してなるものである。本実施の形態の樹脂フィルムは、優れた高周波特性と湿度に対する安定性を付与するために、樹脂成分として、テトラカルボン酸無水物成分と、全ジアミン成分に対し、ダイマー酸の二つの末端カルボン酸基が1級アミノメチル基又はアミノ基に置換されてなるダイマージアミンを主成分とするダイマージアミン組成物を40モル%以上含有するジアミン成分と、を反応させてなるポリイミドを含有する。なお、本実施の形態の樹脂フィルムは、樹脂成分以外の任意成分として、例えばフィラーなどを含有してもよい。
<Resin film>
The resin film of the present embodiment is formed by forming a film with a resin component as a main component. In order to impart excellent high frequency characteristics and stability against humidity, the resin film of the present embodiment contains, as a resin component, a polyimide obtained by reacting a tetracarboxylic anhydride component with a diamine component containing 40 mol % or more of a dimer diamine composition mainly composed of a dimer diamine in which two terminal carboxylic acid groups of a dimer acid are substituted with a primary aminomethyl group or an amino group, based on the total diamine component. The resin film of the present embodiment may contain, for example, a filler as an optional component other than the resin component.
(誘電特性)
本実施の形態の樹脂フィルムは、下記式(i)、
E1=√ε1×Tanδ1 ・・・(i)
[ここで、ε1は、23℃、50%RHの恒温恒湿条件(常態)のもと24時間調湿後に、スプリットポスト誘電体共振器(SPDR)により測定される10GHzにおける誘電率を示し、Tanδ1は、23℃、50%RHの恒温恒湿条件のもと24時間調湿後に、SPDRにより測定される10GHzにおける誘電正接を示す]
に基づき算出される、23℃、50%RHの恒温恒湿条件のもと24時間調湿後の10GHzにおける誘電特性を示す指標であるE1値が0.010以下、好ましくは0.009以下がよく、より好ましくは0.008以下がよい。E1値が、上記上限を超えると、例えばFPC等の回路基板に使用した際に、高周波信号の伝送経路上で電気信号のロスなどの不都合が生じやすくなる。
(Dielectric Properties)
The resin film of the present embodiment is represented by the following formula (i):
E 1 =√ε 1 ×Tanδ 1 ...(i)
[wherein ε 1 denotes the dielectric constant at 10 GHz measured by a split post dielectric resonator (SPDR) after 24 hours of conditioning under constant temperature and humidity conditions (normal state) of 23° C. and 50% RH, and Tan δ 1 denotes the dielectric loss tangent at 10 GHz measured by a SPDR after 24 hours of conditioning under constant temperature and humidity conditions of 23° C. and 50% RH]
The E1 value, which is an index showing the dielectric properties at 10 GHz after 24 hours of humidity conditioning under constant temperature and humidity conditions of 23° C. and 50% RH, calculated based on the above, is 0.010 or less, preferably 0.009 or less, and more preferably 0.008 or less. If the E1 value exceeds the above upper limit, for example, when used in a circuit board such as an FPC, problems such as loss of electrical signals are likely to occur in the transmission path of high-frequency signals.
(誘電率)
本実施の形態の樹脂フィルムは、例えばFPC等の回路基板に使用した際のインピーダンス整合性を確保するため、また電気信号のロス低減のために、23℃、50%RHの恒温恒湿条件のもと24時間調湿後の10GHzにおける誘電率(ε1)は、好ましくは3.2以下がよく、より好ましくは3.0以下がよい。この誘電率が3.2を超えると、例えばFPC等の回路基板に使用した際に、高周波信号の伝送経路上で電気信号のロスなどの不都合が生じやすくなる。
(Dielectric constant)
In order to ensure impedance matching when used in a circuit board such as an FPC and to reduce loss of an electric signal, the resin film of the present embodiment has a dielectric constant (ε 1 ) at 10 GHz after 24 hours of humidity conditioning under constant temperature and humidity conditions of 23° C. and 50% RH of preferably 3.2 or less, more preferably 3.0 or less. If the dielectric constant exceeds 3.2, problems such as loss of an electric signal are likely to occur on the transmission path of a high-frequency signal when used in a circuit board such as an FPC.
(誘電正接)
また、本実施の形態の樹脂フィルムは、例えばFPC等の回路基板に使用した際の電気信号のロス低減のために、23℃、50%RHの恒温恒湿条件のもと24時間調湿後の10GHzにおける誘電正接(Tanδ1)は、好ましくは0.005未満がよく、より好ましくは0.004以下がよい。この誘電正接が0.005以上であると、例えばFPC等の回路基板に使用した際に、高周波信号の伝送経路上で電気信号のロスなどの不都合が生じやすくなる。
(Dielectric tangent)
In addition, in order to reduce loss of an electric signal when the resin film of the present embodiment is used in a circuit board such as an FPC, the dielectric loss tangent (Tan δ 1 ) at 10 GHz after 24 hours of humidity conditioning under constant temperature and humidity conditions of 23° C. and 50% RH is preferably less than 0.005, more preferably 0.004 or less. If the dielectric loss tangent is 0.005 or more, problems such as loss of an electric signal are likely to occur on the transmission path of a high-frequency signal when the resin film is used in a circuit board such as an FPC.
(吸湿依存性)
本実施の形態の樹脂フィルムは、例えばFPC等の回路基板に使用した際の乾燥時及び湿潤時での電気信号のロス低減やインピーダンス整合性を確保するために、下記式(ii)、
E2=√ε2×Tanδ2 ・・・(ii)
[ここで、ε2は、23℃、24時間吸水後に、SPDRにより測定される10GHzにおける誘電率を示し、Tanδ2は、23℃、24時間吸水後に、SPDRによって測定される10GHzにおける誘電正接を示す]
に基づき算出される、23℃、24時間吸水後の10GHzにおける誘電特性を示す指標であるE2値において、上記式(i)に基づき算出されるE1値に対するE2値の比(E2/E1)が3.0~1.0の範囲内であり、好ましくは2.5~1.0の範囲内がよく、より好ましくは2.2~1.0の範囲内がよい。E2/E1が、上記上限を超えると、例えばFPC等の回路基板に使用した際に、湿潤時での誘電率及び誘電正接の上昇を招き、高周波信号の伝送経路上で電気信号のロスなどの不都合が生じやすくなる。
(Moisture absorption dependency)
In order to reduce loss of electrical signals and ensure impedance matching in both dry and wet conditions when used in a circuit board such as an FPC, the resin film of the present embodiment satisfies the following formula (ii):
E 2 =√ε 2 ×Tan δ 2 ...(ii)
[where ε2 represents the dielectric constant at 10 GHz measured by SPDR after absorbing water at 23°C for 24 hours, and Tan δ2 represents the dielectric tangent at 10 GHz measured by SPDR after absorbing water at 23°C for 24 hours]
In the E2 value, which is an index showing the dielectric properties at 10 GHz after absorbing water at 23°C for 24 hours and is calculated based on the above, the ratio of the E2 value to the E1 value calculated based on the above formula (i) ( E2 / E1 ) is in the range of 3.0 to 1.0, preferably in the range of 2.5 to 1.0, and more preferably in the range of 2.2 to 1.0. If E2 / E1 exceeds the above upper limit, when used in a circuit board such as an FPC, the dielectric constant and dielectric loss tangent will increase when wet, and problems such as loss of electrical signals will easily occur on the transmission path of high-frequency signals.
(吸湿率)
また、本実施の形態の樹脂フィルムは、例えばFPC等の回路基板に使用した際の湿度による影響を低減するために、樹脂フィルムの吸湿率が、好ましくは0.5質量%以下がよく、より好ましくは0.3質量%未満がよい。ここで、「吸湿率」は、23℃、50%RHの恒温恒湿条件のもと24時間以上経過後の吸湿率を意味する(本明細書において同様の意味である)。樹脂フィルムの吸湿率が0.5質量%を超えると、例えばFPC等の回路基板に使用した際に、湿度の影響を受けやすくなり、高周波信号の伝送速度の変動などの不都合が生じやすくなる。つまり、樹脂フィルムの吸湿率が上記範囲を上回ると、誘電率の高い水を吸収しやすくなるので、誘電率及び誘電正接の上昇を招き、高周波信号の伝送経路上で電気信号のロスなどの不都合が生じやすくなる。
(Moisture absorption rate)
In addition, in order to reduce the influence of humidity when the resin film of the present embodiment is used for a circuit board such as an FPC, the moisture absorption rate of the resin film is preferably 0.5% by mass or less, more preferably less than 0.3% by mass. Here, the "moisture absorption rate" means the moisture absorption rate after 24 hours or more have passed under constant temperature and humidity conditions of 23°C and 50% RH (the same meaning is used in this specification). If the moisture absorption rate of the resin film exceeds 0.5% by mass, it becomes susceptible to the influence of humidity when used for a circuit board such as an FPC, and inconveniences such as fluctuations in the transmission speed of high-frequency signals are likely to occur. In other words, if the moisture absorption rate of the resin film exceeds the above range, it becomes easy to absorb water with a high dielectric constant, which leads to an increase in the dielectric constant and dielectric loss tangent, and inconveniences such as loss of electrical signals on the transmission path of high-frequency signals are likely to occur.
(貯蔵弾性率)
本実施の形態の樹脂フィルムは、40~250℃の範囲に、温度上昇に伴って貯蔵弾性率が急勾配で減少する温度域が存在するものであってもよい。このような樹脂フィルムの特性が、例えば熱圧着時の内部応力を緩和し、回路加工後の寸法安定性を保持する要因であると考えられる。樹脂フィルムは、前記温度域の上限温度での貯蔵弾性率が、5×107[Pa]以下であることが好ましい。このような貯蔵弾性率とすることによって、仮に上記温度範囲の上限としても、250℃以下での熱圧着が可能となり、密着性を担保し、回路加工後の寸法変化を抑制することができる。
なお、本実施の形態の樹脂フィルムは高熱膨張性であるが低弾性であるため、CTEが30ppm/Kを超えても、積層時に発生する内部応力を緩和することができる。
(Storage Modulus)
The resin film of the present embodiment may have a temperature range in the range of 40 to 250°C in which the storage modulus decreases steeply with increasing temperature. It is considered that such a characteristic of the resin film is a factor in, for example, alleviating internal stress during thermocompression bonding and maintaining dimensional stability after circuit processing. The resin film preferably has a storage modulus of 5 x 10 7 [Pa] or less at the upper limit temperature of the temperature range. By setting the storage modulus at such a range, even if it is the upper limit of the above temperature range, thermocompression bonding at 250°C or less is possible, and adhesion is ensured and dimensional change after circuit processing can be suppressed.
In addition, since the resin film of the present embodiment has high thermal expansion but low elasticity, even if the CTE exceeds 30 ppm/K, the internal stress generated during lamination can be alleviated.
(ガラス転移温度)
本実施の形態の樹脂フィルムは、ガラス転移温度(Tg)が250℃以下であることが好ましく、40℃以上200℃以下の範囲内であることがより好ましい。樹脂フィルムのTgが250℃以下であることによって、低温での熱圧着が可能になるため、積層時に発生する内部応力を緩和し、回路加工後の寸法変化を抑制できる。樹脂フィルムのTgが250℃を超えると、接着温度が高くなり、回路加工後の寸法安定性を損なう恐れがある。
(Glass Transition Temperature)
The resin film of the present embodiment preferably has a glass transition temperature (Tg) of 250° C. or less, more preferably in the range of 40° C. or more and 200° C. or less. By making the Tg of the resin film 250° C. or less, thermocompression bonding at a low temperature is possible, so that the internal stress generated during lamination can be alleviated and dimensional change after circuit processing can be suppressed. If the Tg of the resin film exceeds 250° C., the bonding temperature becomes high, and there is a risk of impairing dimensional stability after circuit processing.
(厚み)
本実施の形態の樹脂フィルムは、厚みが、例えば5μm以上125μm以下の範囲内が好ましく、8μm以上100μm以下の範囲内であることがより好ましい。樹脂フィルムの厚みが5μmに満たないと、樹脂フィルムの製造等における搬送時にシワが入るなどの不具合が生じるおそれがあり、一方、樹脂フィルムの厚みが125μmを超えると樹脂フィルムの生産性低下の虞がある。
(Thickness)
The thickness of the resin film of the present embodiment is preferably, for example, in the range of 5 μm to 125 μm, and more preferably in the range of 8 μm to 100 μm. If the thickness of the resin film is less than 5 μm, there is a risk of problems such as wrinkles occurring during transportation in the production of the resin film, while if the thickness of the resin film exceeds 125 μm, there is a risk of a decrease in productivity of the resin film.
<ポリイミド>
本実施の形態のポリイミドは、テトラカルボン酸無水物成分と、全ジアミン成分に対し、ダイマー酸の二つの末端カルボン酸基が1級アミノメチル基又はアミノ基に置換されてなるダイマージアミンを主成分とするダイマージアミン組成物を40モル%以上含有するジアミン成分と、を反応させて得られる前駆体のポリアミド酸をイミド化したものである。
<Polyimide>
The polyimide of the present embodiment is obtained by imidizing a precursor polyamic acid obtained by reacting a tetracarboxylic anhydride component with a diamine component containing 40 mol % or more of a dimer diamine composition mainly composed of a dimer diamine in which two terminal carboxylic acid groups of a dimer acid are substituted with primary aminomethyl groups or amino groups, relative to the total diamine component.
(テトラカルボン酸無水物成分)
本実施の形態のポリイミドに使用されるテトラカルボン酸無水物は、一般に熱可塑性ポリイミドに使用されるテトラカルボン酸無水物を特に制限なく含むことができるが、全テトラカルボン酸無水物成分に対して、下記の一般式(1)で表されるテトラカルボン酸無水物を、合計で90モル%以上含有することが好ましい。下記の一般式(1)で表されるテトラカルボン酸無水物を、全テトラカルボン酸無水物成分に対して、合計で90モル%以上含有させることによって、ポリイミドの柔軟性と耐熱性の両立が図りやすく好ましい。下記の一般式(1)で表されるテトラカルボン酸無水物の合計が90モル%未満では、ポリイミドの溶剤溶解性が低下する傾向になる。
(Tetracarboxylic acid anhydride component)
The tetracarboxylic anhydride used in the polyimide of the present embodiment may include any tetracarboxylic anhydride generally used in thermoplastic polyimides without any particular limitations, but preferably contains tetracarboxylic anhydrides represented by the following general formula (1) in a total amount of 90 mol % or more based on the total tetracarboxylic anhydride components. By containing tetracarboxylic anhydrides represented by the following general formula (1) in a total amount of 90 mol % or more based on the total tetracarboxylic anhydride components, it is preferable that the polyimide is easily compatible in terms of flexibility and heat resistance. If the total amount of tetracarboxylic anhydrides represented by the following general formula (1) is less than 90 mol %, the solvent solubility of the polyimide tends to decrease.
一般式(1)中、Xは、単結合、または、下式から選ばれる2価の基を示す。 In general formula (1), X represents a single bond or a divalent group selected from the following formulas:
上記式において、Zは-C6H4-、-(CH2)n-又は-CH2-CH(-O-C(=O)-CH3)-CH2-を示すが、nは1~20の整数を示す。 In the above formula, Z represents —C 6 H 4 —, —(CH 2 )n— or —CH 2 —CH(—O—C(═O)—CH 3 )—CH 2 —, where n represents an integer of 1 to 20.
なお、「熱可塑性ポリイミド」とは、一般にガラス転移温度(Tg)が明確に確認できるポリイミドのことであるが、本発明では、動的粘弾性測定装置(DMA)を用いて測定した、30℃における貯蔵弾性率が1.0×108Pa以上であり、300℃における貯蔵弾性率が3.0×107Pa未満であるポリイミドをいう。また、「非熱可塑性ポリイミド」とは、一般に加熱しても軟化、接着性を示さないポリイミドのことであるが、本発明では、動的粘弾性測定装置(DMA)を用いて測定した、30℃における貯蔵弾性率が1.0×109Pa以上であり、300℃における貯蔵弾性率が3.0×108Pa以上であるポリイミドをいう。 Incidentally, the term "thermoplastic polyimide" generally refers to a polyimide whose glass transition temperature (Tg) can be clearly confirmed, but in the present invention, it refers to a polyimide whose storage modulus at 30° C. is 1.0×10 8 Pa or more and whose storage modulus at 300° C. is less than 3.0×10 7 Pa, as measured using a dynamic viscoelasticity measuring apparatus (DMA). Furthermore, the term "non-thermoplastic polyimide" generally refers to a polyimide that does not soften or exhibit adhesiveness even when heated, but in the present invention, it refers to a polyimide whose storage modulus at 30° C. is 1.0×10 9 Pa or more and whose storage modulus at 300° C. is 3.0×10 8 Pa or more, as measured using a dynamic viscoelasticity measuring apparatus (DMA).
上記一般式(1)で表されるテトラカルボン酸無水物としては、例えば、3,3’,4,4’-ビフェニルテトラカルボン酸二無水物(BPDA)、3,3',4,4'-ベンゾフェノンテトラカルボン酸二無水物(BTDA)、3,3’,4,4’-ジフェニルスルホンテトラカルボン酸二無水物(DSDA)、4,4’-オキシジフタル酸無水物(ODPA)、4,4’-(ヘキサフルオロイソプロピリデン)ジフタル酸無水物(6FDA)、2,2-ビス〔4-(3,4-ジカルボキシフェノキシ)フェニル〕プロパン二無水物(BPADA)、p-フェニレンビス(トリメリット酸モノエステル酸無水物)(TAHQ)、エチレングリコール ビスアンヒドロトリメリテート(TMEG)などを挙げることができる。これらの中でも特に3,3',4,4'-ベンゾフェノンテトラカルボン酸二無水物(BTDA)を使用する場合は、ポリイミドの接着性を向上させることができ、また分子骨格に存在するケトン基と、後述する(B)成分のアミノ基が反応してC=N結合を形成する場合があり、耐熱性を向上させる効果を発現しやすい。このような観点から、全テトラカルボン酸無水物成分に対して、BTDAを好ましくは50モル%以上、より好ましくは60モル%以上含有することがよい。 Examples of tetracarboxylic acid anhydrides represented by the above general formula (1) include 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA), 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA), 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride (DSDA), 4,4'-oxydiphthalic anhydride (ODPA), 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (6FDA), 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride (BPADA), p-phenylenebis(trimellitic acid monoester anhydride) (TAHQ), and ethylene glycol bisanhydrotrimellitate (TMEG). Among these, when 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA) is used, the adhesion of the polyimide can be improved, and the ketone group present in the molecular skeleton may react with the amino group of the (B) component described below to form a C=N bond, which is likely to produce the effect of improving heat resistance. From this perspective, it is preferable to contain BTDA in an amount of preferably 50 mol % or more, more preferably 60 mol % or more, of the total tetracarboxylic anhydride components.
本実施の形態のポリイミドは、発明の効果を損なわない範囲で、上記一般式(1)で表されるテトラカルボン酸無水物以外の酸無水物から誘導されるテトラカルボン酸残基を含有することができる。そのようなテトラカルボン酸残基としては、特に制限はないが、例えば、ピロメリット酸二無水物、2,3',3,4'-ビフェニルテトラカルボン酸二無水物、2,2',3,3'-又は2,3,3',4'-ベンゾフェノンテトラカルボン酸二無水物、2,3',3,4'-ジフェニルエーテルテトラカルボン酸二無水物、ビス(2,3-ジカルボキシフェニル)エーテル二無水物、3,3'',4,4''-、2,3,3'',4''-又は2,2'',3,3''-p-テルフェニルテトラカルボン酸二無水物、2,2-ビス(2,3-又は3,4-ジカルボキシフェニル)-プロパン二無水物、ビス(2,3-又は3.4-ジカルボキシフェニル)メタン二無水物、ビス(2,3-又は3,4-ジカルボキシフェニル)スルホン二無水物、1,1-ビス(2,3-又は3,4-ジカルボキシフェニル)エタン二無水物、1,2,7,8-、1,2,6,7-又は1,2,9,10-フェナンスレン-テトラカルボン酸二無水物、2,3,6,7-アントラセンテトラカルボン酸二無水物、2,2-ビス(3,4-ジカルボキシフェニル)テトラフルオロプロパン二無水物、2,3,5,6-シクロヘキサン二無水物、1,2,5,6-ナフタレンテトラカルボン酸二無水物、1,4,5,8-ナフタレンテトラカルボン酸二無水物、2,3,6,7-ナフタレンテトラカルボン酸二無水物、4,8-ジメチル-1,2,3,5,6,7-ヘキサヒドロナフタレン-1,2,5,6-テトラカルボン酸二無水物、2,6-又は2,7-ジクロロナフタレン-1,4,5,8-テトラカルボン酸二無水物、2,3,6,7-(又は1,4,5,8-)テトラクロロナフタレン-1,4,5,8-(又は2,3,6,7-)テトラカルボン酸二無水物、2,3,8,9-、3,4,9,10-、4,5,10,11-又は5,6,11,12-ペリレン-テトラカルボン酸二無水物、シクロペンタン-1,2,3,4-テトラカルボン酸二無水物、ピラジン-2,3,5,6-テトラカルボン酸二無水物、ピロリジン-2,3,4,5-テトラカルボン酸二無水物、チオフェン-2,3,4,5-テトラカルボン酸二無水物、4,4’-ビス(2,3-ジカルボキシフェノキシ)ジフェニルメタン二無水物、エチレングリコール ビスアンヒドロトリメリテート等の芳香族テトラカルボン酸二無水物から誘導されるテトラカルボン酸残基が挙げられる。 The polyimide of the present embodiment may contain tetracarboxylic acid residues derived from acid anhydrides other than the tetracarboxylic acid anhydride represented by the above general formula (1) within the scope of the invention. There are no particular limitations on such tetracarboxylic acid residues, and examples thereof include pyromellitic dianhydride, 2,3',3,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'- or 2,3,3',4'-benzophenonetetracarboxylic dianhydride, 2,3',3,4'-diphenylethertetracarboxylic dianhydride, bis(2,3-dicarboxyphenyl)ether dianhydride, 3,3'',4,4''-, 2,3,3'',4''- or 2,2'',3,3''-p-terphenyltetracarboxylic dianhydride, 2,2-biphenyltetracarboxylic dianhydride, 2,3',3,4''- ...3',3,4''-, 2,3',3,4''-, 2,3',3,3''-p-terphenyltetracarboxylic dianhydride, 2,3',3,4''-, 2,3',3,4''-, 2,3',3,3''-p-terphenyltetracarboxylic dianhydride, 2,3',3,4''-, 2,3',3,4''-, 2,3',3,4''-, 2,3',3,3''-p-terphenyltetracarboxylic dianhydride, 2,3',3,4''-, 2,3',3,4''-, 2,3',3, Bis(2,3- or 3,4-dicarboxyphenyl)propane dianhydride, bis(2,3- or 3,4-dicarboxyphenyl)methane dianhydride, bis(2,3- or 3,4-dicarboxyphenyl)sulfone dianhydride, 1,1-bis(2,3- or 3,4-dicarboxyphenyl)ethane dianhydride, 1,2,7,8-, 1,2,6,7- or 1,2,9,10-phenanthrene tetracarboxylic dianhydride, 2,3,6,7-anthracene tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)tetrafluoropropane dianhydride, 2,3,5,6-cyclohexane dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 2,6- or 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-(or 1,4,5,8-)tetrachloronaphthalene-1,4,5,8 Examples of the tetracarboxylic acid residues include those derived from aromatic tetracarboxylic acid dianhydrides such as 2,3,6,7-(or 2,3,6,7-)-tetracarboxylic acid dianhydride, 2,3,8,9-, 3,4,9,10-, 4,5,10,11- or 5,6,11,12-perylene-tetracarboxylic acid dianhydride, cyclopentane-1,2,3,4-tetracarboxylic acid dianhydride, pyrazine-2,3,5,6-tetracarboxylic acid dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic acid dianhydride, thiophene-2,3,4,5-tetracarboxylic acid dianhydride, 4,4'-bis(2,3-dicarboxyphenoxy)diphenylmethane dianhydride, and ethylene glycol bisanhydrotrimellitate.
(ジアミン成分)
本実施の形態のポリイミドは、全ジアミン成分に対して、ダイマージアミン組成物を40モル%以上、より好ましくは60モル%以上含有する。ダイマージアミン組成物を上記の量で含有することによって、ポリイミドの誘電特性を改善させるとともに、ポリイミドのガラス転移温度の低温化(低Tg化)による熱圧着特性の改善及び低弾性率化による内部応力を緩和することができる。
(Diamine component)
The polyimide of the present embodiment contains 40 mol % or more, more preferably 60 mol % or more, of the dimer diamine composition based on the total diamine components. By containing the dimer diamine composition in the above amount, the dielectric properties of the polyimide can be improved, and the thermocompression bonding properties can be improved by lowering the glass transition temperature (lowering Tg) of the polyimide, and the internal stress can be alleviated by lowering the elastic modulus.
(ダイマージアミン組成物)
ダイマージアミン組成物は、下記成分(a)を含有するとともに、成分(b)及び(c)の量が制御されているものである。
(Dimer diamine composition)
The dimer diamine composition contains the following component (a) with the amounts of components (b) and (c) being controlled:
(a)ダイマージアミン;
(a)成分のダイマージアミンとは、ダイマー酸の二つの末端カルボン酸基(-COOH)が、1級のアミノメチル基(-CH2-NH2)又はアミノ基(-NH2)に置換されてなるジアミンを意味する。ダイマー酸は、不飽和脂肪酸の分子間重合反応によって得られる既知の二塩基酸であり、その工業的製造プロセスは業界でほぼ標準化されており、炭素数が11~22の不飽和脂肪酸を粘土触媒等にて二量化して得られる。工業的に得られるダイマー酸は、オレイン酸やリノール酸、リノレン酸などの炭素数18の不飽和脂肪酸を二量化することによって得られる炭素数36の二塩基酸が主成分であるが、精製の度合いに応じ、任意量のモノマー酸(炭素数18)、トリマー酸(炭素数54)、炭素数20~54の他の重合脂肪酸を含有する。また、ダイマー化反応後には二重結合が残存するが、本発明では、更に水素添加反応して不飽和度を低下させたものもダイマー酸に含めるものとする。(a)成分のダイマージアミンは、炭素数18~54の範囲内、好ましくは22~44の範囲内にある二塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるジアミン化合物、と定義することができる。
(a) dimer diamine;
The dimer diamine of the component (a) means a diamine in which two terminal carboxylic acid groups (-COOH) of a dimer acid are replaced by primary aminomethyl groups (-CH 2 -NH 2 ) or amino groups (-NH 2 ). Dimer acid is a known dibasic acid obtained by intermolecular polymerization of unsaturated fatty acids, and its industrial production process is almost standardized in the industry, and is obtained by dimerizing unsaturated fatty acids having 11 to 22 carbon atoms using a clay catalyst or the like. Industrially obtained dimer acid is mainly composed of a dibasic acid having 36 carbon atoms obtained by dimerizing unsaturated fatty acids having 18 carbon atoms, such as oleic acid, linoleic acid, and linolenic acid, but contains any amount of monomer acid (having 18 carbon atoms), trimer acid (having 54 carbon atoms), and other polymerized fatty acids having 20 to 54 carbon atoms depending on the degree of purification. In addition, although double bonds remain after the dimerization reaction, in the present invention, those which have been further subjected to a hydrogenation reaction to reduce the degree of unsaturation are also included in the dimer acid. The dimer diamine of the component (a) can be defined as a diamine compound obtained by substituting the terminal carboxylic acid group of a dibasic acid compound having a carbon number of 18 to 54, preferably 22 to 44, with a primary aminomethyl group or an amino group.
ダイマージアミン組成物は、分子蒸留等の精製方法によって(a)成分のダイマージアミン含有量を96重量%以上、好ましくは97重量%以上、より好ましくは98重量%以上にまで高めたものを使用することがよい。(a)成分のダイマージアミン含有量を96重量%以上とすることで、ポリイミドの分子量分布の拡がりを抑制することができる。なお、技術的に可能であれば、ダイマージアミン組成物のすべて(100重量%)が、(a)成分のダイマージアミンによって構成されていることが最もよい。 It is advisable to use a dimer diamine composition in which the dimer diamine content of component (a) has been increased to 96% by weight or more, preferably 97% by weight or more, and more preferably 98% by weight or more, by a purification method such as molecular distillation. By increasing the dimer diamine content of component (a) to 96% by weight or more, it is possible to suppress the broadening of the molecular weight distribution of the polyimide. If technically possible, it is best that all of the dimer diamine composition (100% by weight) is composed of component (a) dimer diamine.
(b)炭素数10~40の範囲内にある一塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるモノアミン化合物;
炭素数10~40の範囲内にある一塩基酸化合物は、ダイマー酸の原料に由来する炭素数10~20の範囲内にある一塩基性不飽和脂肪酸、及びダイマー酸の製造時の副生成物である炭素数21~40の範囲内にある一塩基酸化合物の混合物である。モノアミン化合物は、これらの一塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるものである。
(b) a monoamine compound obtained by substituting a terminal carboxylic acid group of a monobasic acid compound having 10 to 40 carbon atoms with a primary aminomethyl group or an amino group;
The monobasic acid compound having 10 to 40 carbon atoms is a mixture of a monobasic unsaturated fatty acid having 10 to 20 carbon atoms derived from the raw material of dimer acid, and a monobasic acid compound having 21 to 40 carbon atoms which is a by-product during the production of dimer acid. The monoamine compound is obtained by substituting the terminal carboxylic acid group of these monobasic acid compounds with a primary aminomethyl group or an amino group.
(b)成分のモノアミン化合物は、ポリイミドの分子量増加を抑制する成分である。ポリアミド酸又はポリイミドの重合時に、該モノアミン化合物の単官能のアミノ基が、ポリアミド酸又はポリイミドの末端酸無水物基と反応することで末端酸無水物基が封止され、ポリアミド酸又はポリイミドの分子量増加を抑制する。 The monoamine compound of component (b) is a component that suppresses the increase in molecular weight of the polyimide. During polymerization of the polyamic acid or polyimide, the monofunctional amino group of the monoamine compound reacts with the terminal acid anhydride group of the polyamic acid or polyimide, thereby blocking the terminal acid anhydride group and suppressing the increase in molecular weight of the polyamic acid or polyimide.
(c)炭素数41~80の範囲内にある炭化水素基を有する多塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるアミン化合物(但し、前記ダイマージアミンを除く);
炭素数41~80の範囲内にある炭化水素基を有する多塩基酸化合物は、ダイマー酸の製造時の副生成物である炭素数41~80の範囲内にある三塩基酸化合物を主成分とする多塩基酸化合物である。また、炭素数41~80のダイマー酸以外の重合脂肪酸を含んでもよい。アミン化合物は、これらの多塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるものである。
(c) Amine compounds obtained by substituting the terminal carboxylic acid group of a polybasic acid compound having a hydrocarbon group having 41 to 80 carbon atoms with a primary aminomethyl group or an amino group (excluding the above-mentioned dimer diamine);
The polybasic acid compound having a hydrocarbon group having 41 to 80 carbon atoms is a polybasic acid compound mainly composed of a tribasic acid compound having 41 to 80 carbon atoms, which is a by-product during the production of dimer acid. It may also contain a polymerized fatty acid other than dimer acid having 41 to 80 carbon atoms. The amine compound is obtained by substituting the terminal carboxylic acid group of these polybasic acid compounds with a primary aminomethyl group or an amino group.
(c)成分のアミン化合物は、ポリイミドの分子量増加を助長する成分である。トリマー酸を由来とするトリアミン体を主成分とする三官能以上のアミノ基が、ポリアミド酸又はポリイミドの末端酸無水物基と反応し、ポリイミドの分子量を急激に増加させる。また、炭素数41~80のダイマー酸以外の重合脂肪酸から誘導されるアミン化合物も、ポリイミドの分子量を増加させ、ポリアミド酸又はポリイミドのゲル化の原因となる。 The amine compound (c) is a component that promotes an increase in the molecular weight of the polyimide. The tri- or higher functional amino group, the main component of which is a triamine derived from trimer acid, reacts with the terminal acid anhydride group of the polyamic acid or polyimide, rapidly increasing the molecular weight of the polyimide. In addition, amine compounds derived from polymerized fatty acids other than dimer acids having 41 to 80 carbon atoms also increase the molecular weight of the polyimide, causing the polyamic acid or polyimide to gel.
上記ダイマージアミン組成物は、ゲル浸透クロマトグラフィー(GPC)を用いた測定によって各成分の定量を行うが、ダイマージアミン組成物の各成分のピークスタート、ピークトップ及びピークエンドの確認を容易にするために、ダイマージアミン組成物を無水酢酸及びピリジンで処理したサンプルを使用し、また内部標準物質としてシクロヘキサノンを使用する。このように調製したサンプルを用いて、GPCのクロマトグラムの面積パーセントで各成分を定量する。各成分のピークスタート及びピークエンドは、各ピーク曲線の極小値とし、これを基準にクロマトグラムの面積パーセントの算出を行う。 The above dimer diamine composition is quantified for each component by measurement using gel permeation chromatography (GPC). In order to facilitate confirmation of the peak start, peak top, and peak end of each component of the dimer diamine composition, a sample of the dimer diamine composition treated with acetic anhydride and pyridine is used, and cyclohexanone is used as an internal standard. Using the sample thus prepared, each component is quantified by the area percentage of the GPC chromatogram. The peak start and peak end of each component are taken as the minimum values of each peak curve, and the area percentage of the chromatogram is calculated based on this.
また、本発明で用いるダイマージアミン組成物は、GPC測定によって得られるクロマトグラムの面積パーセントで、成分(b)及び(c)の合計が4%以下、好ましくは4%未満がよい。成分(b)及び(c)の合計を4%以下とすることで、ポリイミドの分子量分布の拡がりを抑制することができる。 In addition, the dimer diamine composition used in the present invention has a total area percentage of components (b) and (c) of 4% or less, preferably less than 4%, in the chromatogram obtained by GPC measurement. By keeping the total area percentage of components (b) and (c) at 4% or less, it is possible to suppress the broadening of the molecular weight distribution of the polyimide.
また、(b)成分のクロマトグラムの面積パーセントは、好ましくは3%以下、より好ましくは2%以下、更に好ましくは1%以下がよい。このような範囲にすることで、ポリイミドの分子量の低下を抑制することができ、更にテトラカルボン酸無水物成分及びジアミン成分の仕込みのモル比の範囲を広げることができる。なお、(b)成分は、ダイマージアミン組成物中に含まれていなくてもよい。 The area percentage of the chromatogram of component (b) is preferably 3% or less, more preferably 2% or less, and even more preferably 1% or less. By setting it in this range, it is possible to suppress a decrease in the molecular weight of the polyimide, and further to widen the range of the molar ratio of the tetracarboxylic anhydride component and the diamine component. Note that component (b) does not have to be included in the dimer diamine composition.
また、(c)成分のクロマトグラムの面積パーセントは、2%以下であり、好ましくは1.8%以下、より好ましくは1.5%以下がよい。このような範囲にすることで、ポリイミドの分子量の急激な増加を抑制することができ、更に樹脂フィルムの広域の周波数での誘電正接の上昇を抑えることができる。なお、(c)成分は、ダイマージアミン組成物中に含まれていなくてもよい。 The area percentage of the chromatogram of component (c) is 2% or less, preferably 1.8% or less, and more preferably 1.5% or less. By setting it in this range, a sudden increase in the molecular weight of the polyimide can be suppressed, and further, an increase in the dielectric tangent of the resin film over a wide frequency range can be suppressed. Note that component (c) does not have to be included in the dimer diamine composition.
また、成分(b)及び(c)のクロマトグラムの面積パーセントの比率(b/c)が1以上である場合、テトラカルボン酸無水物成分及びジアミン成分のモル比(テトラカルボン酸無水物成分/ジアミン成分)は、好ましくは0.97以上1.0未満とすることがよく、このようなモル比にすることで、ポリイミドの分子量の制御がより容易となる。 In addition, when the ratio (b/c) of the area percentages of the chromatograms of components (b) and (c) is 1 or more, the molar ratio of the tetracarboxylic anhydride component and the diamine component (tetracarboxylic anhydride component/diamine component) is preferably 0.97 or more and less than 1.0, and such a molar ratio makes it easier to control the molecular weight of the polyimide.
また、成分(b)及び(c)の前記クロマトグラムの面積パーセントの比率(b/c)が1未満である場合、テトラカルボン酸無水物成分及びジアミン成分のモル比(テトラカルボン酸無水物成分/ジアミン成分)は、好ましくは0.97以上1.1以下とすることがよく、このようなモル比にすることで、ポリイミドの分子量の制御がより容易となる。 In addition, when the ratio (b/c) of the area percentages of the components (b) and (c) in the chromatogram is less than 1, the molar ratio of the tetracarboxylic anhydride component and the diamine component (tetracarboxylic anhydride component/diamine component) is preferably 0.97 or more and 1.1 or less, and by setting such a molar ratio, it becomes easier to control the molecular weight of the polyimide.
ポリイミドの重量平均分子量は、例えば10,000~200,000の範囲内が好ましく、このような範囲内であれば、ポリイミドの重量平均分子量の制御が容易となる。また、例えばFPC用の接着剤として適用する場合、ポリイミドの重量平均分子量は、20,000~150,000の範囲内がより好ましく、40,000~150,000の範囲内が更に好ましい。ポリイミドの重量平均分子量が20,000未満である場合、フロー耐性が悪化する傾向となる。一方、ポリイミドの重量平均分子量が150,000を超えると、過度に粘度が増加して溶剤に不溶になり、塗工作業の際に接着層の厚みムラ、スジ等の不良が発生しやすい傾向になる。 The weight-average molecular weight of the polyimide is preferably within the range of 10,000 to 200,000, for example. If the weight-average molecular weight of the polyimide is within this range, it is easy to control the weight-average molecular weight of the polyimide. For example, when applied as an adhesive for FPC, the weight-average molecular weight of the polyimide is more preferably within the range of 20,000 to 150,000, and even more preferably within the range of 40,000 to 150,000. If the weight-average molecular weight of the polyimide is less than 20,000, the flow resistance tends to deteriorate. On the other hand, if the weight-average molecular weight of the polyimide exceeds 150,000, the viscosity increases excessively and the polyimide becomes insoluble in a solvent, and defects such as uneven thickness of the adhesive layer and streaks tend to occur during the coating process.
本発明で用いるダイマージアミン組成物は、ダイマージアミン以外の成分を低減する目的で精製することが好ましい。精製方法としては、特に制限されないが、蒸留法や沈殿精製等の公知の方法が好適である。精製前のダイマージアミン組成物は、市販品での入手が可能であり、例えばクローダジャパン社製のPRIAMINE1073(商品名)、同PRIAMINE1074(商品名)、同PRIAMINE1075(商品名)等が挙げられる。 The dimer diamine composition used in the present invention is preferably purified in order to reduce components other than dimer diamine. The purification method is not particularly limited, but known methods such as distillation and precipitation purification are suitable. The dimer diamine composition before purification is commercially available, for example, PRIAMINE 1073 (trade name), PRIAMINE 1074 (trade name), and PRIAMINE 1075 (trade name) manufactured by Croda Japan.
ポリイミドに使用されるダイマージアミン以外のジアミン化合物としては、芳香族ジアミン化合物、脂肪族ジアミン化合物を挙げることができる。それらの具体例としては、1,4-ジアミノベンゼン(p-PDA;パラフェニレンジアミン)、2,2’-ジメチル-4,4’-ジアミノビフェニル(m-TB)、2,2’-n-プロピル-4,4’-ジアミノビフェニル(m-NPB)、4-アミノフェニル-4’-アミノベンゾエート(APAB)、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]プロパン、ビス[4-(3-アミノフェノキシ)フェニル]スルホン、ビス[4-(3-アミノフェノキシ)ビフェニル、ビス[1-(3-アミノフェノキシ)]ビフェニル、ビス[4-(3-アミノフェノキシ)フェニル]メタン、ビス[4-(3-アミノフェノキシ)フェニル]エーテル、ビス[4-(3-アミノフェノキシ)]ベンゾフェノン、9,9-ビス[4-(3-アミノフェノキシ)フェニル]フルオレン、2,2-ビス-[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、3,3’-ジメチル-4,4’-ジアミノビフェニル、4,4’-メチレンジ-o-トルイジン、4,4’-メチレンジ-2,6-キシリジン、4,4’-メチレン-2,6-ジエチルアニリン、3,3’-ジアミノジフェニルエタン、3,3’-ジアミノビフェニル、3,3’-ジメトキシベンジジン、3,3''-ジアミノ-p-テルフェニル、4,4'-[1,4-フェニレンビス(1-メチルエチリデン)]ビスアニリン、4,4'-[1,3-フェニレンビス(1-メチルエチリデン)]ビスアニリン、ビス(p-アミノシクロヘキシル)メタン、ビス(p-β-アミノ-t-ブチルフェニル)エーテル、ビス(p-β-メチル-δ-アミノペンチル)ベンゼン、p-ビス(2-メチル-4-アミノペンチル)ベンゼン、p-ビス(1,1-ジメチル-5-アミノペンチル)ベンゼン、1,5-ジアミノナフタレン、2,6-ジアミノナフタレン、2,4-ビス(β-アミノ-t-ブチル)トルエン、2,4-ジアミノトルエン、m-キシレン-2,5-ジアミン、p-キシレン-2,5-ジアミン、m-キシリレンジアミン、p-キシリレンジアミン、2,6-ジアミノピリジン、2,5-ジアミノピリジン、2,5-ジアミノ-1,3,4-オキサジアゾール、ピペラジン、2'-メトキシ-4,4'-ジアミノベンズアニリド、4,4'-ジアミノベンズアニリド、1,3-ビス[2-(4-アミノフェニル)-2-プロピル]ベンゼン、6-アミノ-2-(4-アミノフェノキシ)ベンゾオキサゾール、1,3-ビス(3-アミノフェノキシ)ベンゼン等のジアミン化合物が挙げられる。 Diamine compounds other than dimer diamine used in polyimides include aromatic diamine compounds and aliphatic diamine compounds. Specific examples of these include 1,4-diaminobenzene (p-PDA; paraphenylenediamine), 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB), 2,2'-n-propyl-4,4'-diaminobiphenyl (m-NPB), 4-aminophenyl-4'-aminobenzoate (APAB), 2,2-bis-[4-(3-aminophenoxy)phenyl]propane, bis[4-(3-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)biphenyl, bis[1-(3-aminophenoxy)]biphenyl, bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3 -aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)]benzophenone, 9,9-bis[4-(3-aminophenoxy)phenyl]fluorene, 2,2-bis-[4-(4-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis-[4-(3-aminophenoxy)phenyl]hexafluoropropane, 3,3'-dimethyl-4,4'-diaminobiphenyl, 4,4'-methylenedi-o-toluidine, 4,4'-methylenedi-2,6-xylidine, 4,4'-methylene-2,6-diethylaniline, 3,3'-diaminodiphenylethane, 3,3'-diaminobiphenyl, 3 ,3'-Dimethoxybenzidine, 3,3''-Diamino-p-terphenyl, 4,4'-[1,4-phenylenebis(1-methylethylidene)]bisaniline, 4,4'-[1,3-phenylenebis(1-methylethylidene)]bisaniline, bis(p-aminocyclohexyl)methane, bis(p-β-amino-t-butylphenyl)ether, bis(p-β-methyl-δ-aminopentyl)benzene, p-bis(2-methyl-4-aminopentyl)benzene, p-bis(1,1-dimethyl-5-aminopentyl)benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis(β-amino-t -butyl)toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-2,5-diamine, m-xylylenediamine, p-xylylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole, piperazine, 2'-methoxy-4,4'-diaminobenzanilide, 4,4'-diaminobenzanilide, 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene, 6-amino-2-(4-aminophenoxy)benzoxazole, 1,3-bis(3-aminophenoxy)benzene and other diamine compounds.
ポリイミドは、上記のテトラカルボン酸無水物成分とジアミン成分を溶媒中で反応させ、ポリアミド酸を生成したのち加熱閉環させることにより製造できる。例えば、テトラカルボン酸無水物成分とジアミン成分をほぼ等モルで有機溶媒中に溶解させて、0~100℃の範囲内の温度で30分~24時間撹拌し重合反応させることでポリイミドの前駆体であるポリアミド酸が得られる。反応にあたっては、生成する前駆体が有機溶媒中に5~50重量%の範囲内、好ましくは10~40重量%の範囲内となるように反応成分を溶解する。重合反応に用いる有機溶媒としては、例えば、N,N-ジメチルホルムアミド(DMF)、N,N-ジメチルアセトアミド(DMAc)、N,N-ジエチルアセトアミド、N-メチル-2-ピロリドン(NMP)、2-ブタノン、ジメチルスホキシド(DMSO)、ヘキサメチルホスホルアミド、N-メチルカプロラクタム、硫酸ジメチル、シクロヘキサノン、メチルシクロヘキサン、ジオキサン、テトラヒドロフラン、ジグライム、トリグライム、メタノール、エタノール、ベンジルアルコール、クレゾール等が挙げられる。これらの溶媒を2種以上併用して使用することもでき、更にはキシレン、トルエンのような芳香族炭化水素の併用も可能である。また、このような有機溶媒の使用量としては特に制限されるものではないが、重合反応によって得られるポリアミド酸溶液の濃度が5~50重量%程度になるような使用量に調整して用いることが好ましい。 Polyimide can be produced by reacting the above tetracarboxylic anhydride component and diamine component in a solvent to produce polyamic acid, which is then heated to close the ring. For example, the tetracarboxylic anhydride component and diamine component are dissolved in approximately equimolar amounts in an organic solvent, and the mixture is stirred at a temperature in the range of 0 to 100°C for 30 minutes to 24 hours to cause a polymerization reaction, thereby obtaining polyamic acid, which is a precursor of polyimide. In the reaction, the reaction components are dissolved so that the resulting precursor is in the range of 5 to 50% by weight, preferably 10 to 40% by weight, in the organic solvent. Examples of organic solvents used in the polymerization reaction include N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), N,N-diethylacetamide, N-methyl-2-pyrrolidone (NMP), 2-butanone, dimethylsulfoxide (DMSO), hexamethylphosphoramide, N-methylcaprolactam, dimethyl sulfate, cyclohexanone, methylcyclohexane, dioxane, tetrahydrofuran, diglyme, triglyme, methanol, ethanol, benzyl alcohol, and cresol. Two or more of these solvents can be used in combination, and aromatic hydrocarbons such as xylene and toluene can also be used in combination. The amount of such organic solvents used is not particularly limited, but it is preferable to adjust the amount so that the concentration of the polyamic acid solution obtained by the polymerization reaction is about 5 to 50% by weight.
合成されたポリアミド酸は、通常、反応溶媒溶液として使用することが有利であるが、必要により濃縮、希釈又は他の有機溶媒に置換することができる。また、ポリアミド酸は一般に溶媒可溶性に優れるので、有利に使用される。ポリアミド酸の溶液の粘度は、500cps~100,000cpsの範囲内であることが好ましい。この範囲を外れると、コーター等による塗工作業の際にフィルムに厚みムラ、スジ等の不良が発生し易くなる。 The synthesized polyamic acid is usually advantageously used as a reaction solvent solution, but it can be concentrated, diluted, or replaced with another organic solvent if necessary. Polyamic acid is also advantageously used because it generally has excellent solvent solubility. The viscosity of the polyamic acid solution is preferably within the range of 500 cps to 100,000 cps. If it is outside this range, defects such as uneven thickness and streaks are likely to occur in the film during coating operations using a coater, etc.
ポリアミド酸をイミド化させてポリイミドを形成させる方法は、特に制限されず、例えば前記溶媒中で、80~400℃の範囲内の温度条件で1~24時間かけて加熱するといった熱処理が好適に採用される。また、温度は一定の温度条件で加熱しても良いし、工程の途中で温度を変えることもできる。 There are no particular limitations on the method for imidizing polyamic acid to form polyimide, and a suitable method is, for example, heat treatment in the solvent at a temperature in the range of 80 to 400°C for 1 to 24 hours. The temperature may be constant, or it may be changed during the process.
本実施の形態のポリイミドにおいて、上記テトラカルボン酸無水物成分及びジアミン成分の種類や、2種以上のテトラカルボン酸無水物成分又はジアミン成分を適用する場合のそれぞれのモル比を選定することにより、誘電特性、熱膨張係数、引張弾性率、ガラス転移温度等を制御することができる。また、本実施の形態のポリイミドにおいて、ポリイミドの構造単位を複数有する場合は、ブロックとして存在しても、ランダムに存在していてもよいが、ランダムに存在することが好ましい。 In the polyimide of this embodiment, the dielectric properties, thermal expansion coefficient, tensile modulus, glass transition temperature, etc. can be controlled by selecting the type of the tetracarboxylic anhydride component and diamine component, and the molar ratio of each when two or more types of tetracarboxylic anhydride components or diamine components are used. In addition, in the polyimide of this embodiment, when the polyimide has multiple structural units of polyimide, they may exist as blocks or randomly, but it is preferable that they exist randomly.
本実施の形態のポリイミドのイミド基濃度は、好ましくは22重量%以下、より好ましくは20重量%以下がよい。ここで、「イミド基濃度」は、ポリイミド中のイミド基部(-(CO)2-N-)の分子量を、ポリイミドの構造全体の分子量で除した値を意味する。イミド基濃度が22重量%を超えると、樹脂自体の分子量が小さくなるとともに、極性基の増加によって低吸湿性も悪化し、Tg及び弾性率が上昇する。 The imide group concentration of the polyimide of this embodiment is preferably 22% by weight or less, and more preferably 20% by weight or less. Here, "imide group concentration" means the value obtained by dividing the molecular weight of the imide group (-(CO) 2 -N-) in the polyimide by the molecular weight of the entire polyimide structure. If the imide group concentration exceeds 22% by weight, the molecular weight of the resin itself decreases, and the low moisture absorption property deteriorates due to an increase in polar groups, and Tg and elastic modulus increase.
本実施の形態のポリイミドは、完全にイミド化された構造が最も好ましい。但し、ポリイミドの一部がアミド酸となっていてもよい。そのイミド化率は、フーリエ変換赤外分光光度計(市販品:日本分光製FT/IR620)を用い、1回反射ATR法にてポリイミド薄膜の赤外線吸収スペクトルを測定することによって、1015cm-1付近のベンゼン環吸収体を基準とし、1780cm-1のイミド基に由来するC=O伸縮の吸光度から算出することができる。 The polyimide of the present embodiment is most preferably a completely imidized structure. However, a part of the polyimide may be an amic acid. The imidization rate can be calculated from the absorbance of the C=O stretching derived from the imide group at 1780 cm -1 , based on the benzene ring absorber at about 1015 cm -1 , by measuring the infrared absorption spectrum of the polyimide thin film by the single reflection ATR method using a Fourier transform infrared spectrophotometer (commercial product: FT/IR620 manufactured by JASCO Corporation).
<接着剤樹脂組成物>
本実施の形態の接着剤樹脂組成物は、(A)成分として、全テトラカルボン酸残基に対して、BTDAから誘導されるBTDA残基を、好ましくは50モル%以上、より好ましくは60モル%以上含有する上記のポリイミド、及び(B)成分として、少なくとも2つの第1級アミノ基を官能基として有するアミノ化合物、を含むものである。なお、本発明において、「BTDA残基」とは、BTDAから誘導された4価の基のことを意味する。
<Adhesive resin composition>
The adhesive resin composition of the present embodiment contains, as component (A), the above-mentioned polyimide containing BTDA residues derived from BTDA in an amount of preferably 50 mol % or more, more preferably 60 mol % or more, based on all tetracarboxylic acid residues, and, as component (B), an amino compound having at least two primary amino groups as functional groups. In the present invention, the "BTDA residue" means a tetravalent group derived from BTDA.
(アミノ化合物)
本実施の形態の接着剤樹脂組成物において、上記(B)成分の少なくとも2つの第1級のアミノ基を官能基として有するアミノ化合物としては、ジヒドラジド化合物、芳香族ジアミン、脂肪族アミン等を例示することができる。これらの中でも、ジヒドラジド化合物が好ましい。ジヒドラジド化合物以外の脂肪族アミンは、室温でも架橋構造を形成しやすく、ワニスの保存安定性の懸念があり、一方、芳香族ジアミンは、架橋構造の形成のために高温にする必要がある。このように、ジヒドラジド化合物を使用した場合は、ワニスの保存安定性と硬化時間の短縮化を両立させることができる。ジヒドラジド化合物としては、例えば、シュウ酸ジヒドラジド、マロン酸ジヒドラジド、コハク酸ジヒドラジド、グルタル酸ジヒドラジド、アジピン酸ジヒドラジド、ピメリン酸ジヒドラジド、スベリン酸ジヒドラジド、アゼライン酸ジヒドラジド、セバシン酸ジヒドラジド、ドデカン二酸ジヒドラジド、マレイン酸ジヒドラジド、フマル酸ジヒドラジド、ジグリコール酸ジヒドラジド、酒石酸ジヒドラジド、リンゴ酸ジヒドラジド、フタル酸ジヒドラジド、イソフタル酸ジヒドラジド、テレフタル酸ジヒドラジド、2,6-ナフトエ二酸ジヒドラジド、4,4-ビスベンゼンジヒドラジド、1,4-ナフトエ酸ジヒドラジド、2,6-ピリジン二酸ジヒドラジド、イタコン酸ジヒドラジド等のジヒドラジド化合物が好ましい。以上のジヒドラジド化合物は、単独でもよいし、2種類以上混合して用いることもできる。
(Amino Compounds)
In the adhesive resin composition of the present embodiment, the amino compound having at least two primary amino groups as functional groups of the above component (B) can be exemplified by dihydrazide compounds, aromatic diamines, aliphatic amines, etc. Among these, dihydrazide compounds are preferred. Aliphatic amines other than dihydrazide compounds are prone to form crosslinked structures even at room temperature, which raises concerns about the storage stability of the varnish, while aromatic diamines require high temperatures to form crosslinked structures. In this way, when a dihydrazide compound is used, it is possible to achieve both the storage stability of the varnish and the shortening of the curing time. Examples of the dihydrazide compounds include oxalic acid dihydrazide, malonic acid dihydrazide, succinic acid dihydrazide, glutaric acid dihydrazide, adipic acid dihydrazide, pimelic acid dihydrazide, suberic acid dihydrazide, azelaic acid dihydrazide, sebacic acid dihydrazide, dodecanedioic acid dihydrazide, maleic acid dihydrazide, fumaric acid dihydrazide, diglyceryl dihydrazide, and the like. Preferred are dihydrazide compounds such as cholic acid dihydrazide, tartaric acid dihydrazide, malic acid dihydrazide, phthalic acid dihydrazide, isophthalic acid dihydrazide, terephthalic acid dihydrazide, 2,6-naphthoedioic acid dihydrazide, 4,4-bisbenzene dihydrazide, 1,4-naphthoic acid dihydrazide, 2,6-pyridine diacid dihydrazide, itaconic acid dihydrazide, etc. The above dihydrazide compounds may be used alone or in combination of two or more.
また、上記(I)ジヒドラジド化合物、(II)芳香族ジアミン、(III)脂肪族アミン等のアミノ化合物は、例えば(I)と(II)の組み合わせ、(I)と(III)との組み合わせ、(I)と(II)と(III)との組み合わせのように、カテゴリーを超えて2種以上組み合わせて使用することもできる。 The above amino compounds, such as (I) dihydrazide compounds, (II) aromatic diamines, and (III) aliphatic amines, can also be used in combination of two or more types beyond the scope of the category, such as a combination of (I) and (II), a combination of (I) and (III), or a combination of (I), (II), and (III).
また、(B)成分のアミノ化合物による架橋で形成される網目状の構造をより密にするという観点から、本発明で使用する(B)成分のアミノ化合物は、その分子量(アミノ化合物がオリゴマーの場合は重量平均分子量)が5,000以下であることが好ましく、より好ましくは90~2,000、更に好ましくは100~1,500がよい。この中でも、100~1,000の分子量をもつアミノ化合物が特に好ましい。アミノ化合物の分子量が90未満になると、アミノ化合物の1つのアミノ基がポリイミド樹脂のケトン基とC=N結合を形成するにとどまり、残りのアミノ基の周辺が立体的に嵩高くなるために残りのアミノ基はC=N結合を形成しにくい傾向となる。 From the viewpoint of making the mesh-like structure formed by the crosslinking with the amino compound of component (B) denser, the amino compound of component (B) used in the present invention preferably has a molecular weight (weight average molecular weight when the amino compound is an oligomer) of 5,000 or less, more preferably 90 to 2,000, and even more preferably 100 to 1,500. Among these, amino compounds having a molecular weight of 100 to 1,000 are particularly preferred. If the molecular weight of the amino compound is less than 90, only one amino group of the amino compound will form a C=N bond with a ketone group of the polyimide resin, and the surroundings of the remaining amino groups will be three-dimensionally bulky, making it difficult for the remaining amino groups to form C=N bonds.
BTDA残基のケトン基とアミノ化合物とを架橋形成させる場合は、(A)成分を含む樹脂溶液に、上記アミノ化合物を加えて、ポリイミド中のケトン基とアミノ化合物の第1級アミノ基とを縮合反応させる。この縮合反応により、樹脂溶液は硬化して硬化物となる。この場合、アミノ化合物の添加量は、ケトン基1モルに対し、第1級アミノ基が合計で0.004モル~1.5モル、好ましくは0.005モル~1.2モル、より好ましくは0.03モル~0.9モル、最も好ましくは0.04モル~0.6モルとなるようにアミノ化合物を添加することができる。ケトン基1モルに対して第1級アミノ基が合計で0.004モル未満となるようなアミノ化合物の添加量では、アミノ化合物による架橋が十分ではないため、硬化後の耐熱性が発現しにくい傾向となり、アミノ化合物の添加量が1.5モルを超えると未反応のアミノ化合物が熱可塑剤として作用し、接着剤層としての耐熱性を低下させる傾向がある。 When crosslinking the ketone group of the BTDA residue with the amino compound, the amino compound is added to a resin solution containing component (A) to cause a condensation reaction between the ketone group in the polyimide and the primary amino group of the amino compound. This condensation reaction hardens the resin solution to become a cured product. In this case, the amount of the amino compound added is such that the total number of primary amino groups per mole of ketone group is 0.004 to 1.5 moles, preferably 0.005 to 1.2 moles, more preferably 0.03 to 0.9 moles, and most preferably 0.04 to 0.6 moles. If the amount of the amino compound added is less than 0.004 moles of primary amino groups per mole of ketone group, crosslinking by the amino compound is insufficient, and heat resistance after curing tends to be difficult to develop, and if the amount of the amino compound added exceeds 1.5 moles, the unreacted amino compound acts as a thermoplasticizer, tending to reduce the heat resistance of the adhesive layer.
架橋形成のための縮合反応の条件は、(A)成分のポリイミドにおけるケトン基と(B)成分のアミノ化合物の第1級アミノ基が反応してイミン結合(C=N結合)を形成する条件であれば、特に制限されない。加熱縮合の温度は、縮合によって生成する水を系外へ放出させるため、又は(A)成分のポリイミドの合成後に引き続いて加熱縮合反応を行なう場合に当該縮合工程を簡略化するため等の理由で、例えば120~220℃の範囲内が好ましく、140~200℃の範囲内がより好ましい。反応時間は、30分~24時間程度が好ましい。反応の終点は、例えばフーリエ変換赤外分光光度計(市販品:日本分光製FT/IR620)を用い、赤外線吸収スペクトルを測定することによって、1670cm-1付近のポリイミド樹脂におけるケトン基に由来する吸収ピークの減少又は消失、及び1635cm-1付近のイミン基に由来する吸収ピークの出現により確認することができる。 The conditions of the condensation reaction for forming the crosslinks are not particularly limited as long as the ketone group in the polyimide of component (A) and the primary amino group in the amino compound of component (B) react to form an imine bond (C=N bond). The temperature of the heat condensation is preferably in the range of, for example, 120 to 220°C, more preferably in the range of 140 to 200°C, for the purpose of releasing water generated by the condensation out of the system, or for the purpose of simplifying the condensation step when the heat condensation reaction is carried out subsequently after the synthesis of the polyimide of component (A). The reaction time is preferably about 30 minutes to 24 hours. The end point of the reaction can be confirmed by, for example, a Fourier transform infrared spectrophotometer (commercial product: FT/IR620 manufactured by JASCO Corporation) by measuring the infrared absorption spectrum, and by the decrease or disappearance of the absorption peak derived from the ketone group in the polyimide resin at about 1670 cm -1 and the appearance of the absorption peak derived from the imine group at about 1635 cm -1 .
(A)成分のポリイミドのケトン基と(B)成分のアミノ化合物の第1級のアミノ基との加熱縮合は、例えば、
(1)(A)成分のポリイミドの合成(イミド化)に引き続き、(B)成分のアミノ化合物を添加して加熱する方法、
(2)ジアミン成分として予め過剰量のアミノ化合物を仕込んでおき、(A)成分のポリイミドの合成(イミド化)に引き続き、イミド化若しくはアミド化に関与しない残りのアミノ化合物を(B)成分として、ポリイミドとともに加熱する方法、又は、
(3)(B)成分のアミノ化合物を添加した(A)成分のポリイミドの組成物を所定の形状に加工した後(例えば任意の基材に塗布した後やフィルム状に形成した後)に加熱する方法、等によって行うことができる。
The thermal condensation of the ketone group of the polyimide (A) and the primary amino group of the amino compound (B) can be carried out, for example, as follows:
(1) A method in which, following synthesis (imidization) of a polyimide (A), an amino compound (B) is added and heated;
(2) A method in which an excess amount of an amino compound is charged in advance as a diamine component, and following synthesis (imidization) of a polyimide of component (A), the remaining amino compound that is not involved in imidization or amidation is heated together with the polyimide as component (B), or
(3) This can be achieved by a method in which the polyimide composition of component (A) to which the amino compound of component (B) has been added is processed into a predetermined shape (for example, after being applied to a substrate or formed into a film), and then heated.
(A)成分のポリイミドの耐熱性付与のため、架橋構造の形成でイミン結合の形成を説明したが、これに限定されるものではなく、(A)成分のポリイミドの硬化方法として、例えばエポキシ樹脂、エポキシ樹脂硬化剤、活性エステル化合物、ベンゾオキサジン樹脂、シアネートエステル樹脂、マレイミド、活性化エステル樹脂、不飽和結合を有するフェニルエーテル骨格やスチレン骨格を有する樹脂等を配合し硬化することも可能である。ここで、活性エステル化合物は、エポキシ樹脂の硬化剤として機能し、活性エステルを有するものである。 The formation of imine bonds has been described as a method for forming a crosslinked structure to impart heat resistance to the polyimide of component (A), but this is not limiting. As a method for curing the polyimide of component (A), it is also possible to blend and cure it with, for example, epoxy resins, epoxy resin curing agents, active ester compounds, benzoxazine resins, cyanate ester resins, maleimides, activated ester resins, resins having a phenyl ether skeleton or a styrene skeleton with an unsaturated bond, etc. Here, the active ester compound functions as a curing agent for the epoxy resin and has an active ester.
また、本実施の形態の接着剤樹脂組成物には、上記(A)成分のポリイミド、(B)成分のアミノ化合物の他に、任意成分として(C)成分の無機フィラーを含有することが好ましい。さらに必要に応じて、他の任意成分として可塑剤、エポキシ樹脂、フッ素樹脂、オレフィン系樹脂などの他の樹脂成分、硬化促進剤、カップリング剤、充填剤、顔料、溶剤、難燃剤などを適宜配合することができる。ただし、可塑剤には、極性基を多く含有するものがあり、それが銅配線からの銅の拡散を助長する懸念があるため、可塑剤は極力使用しないことが好ましい。 In addition to the polyimide (A) and amino compound (B), the adhesive resin composition of the present embodiment preferably contains an inorganic filler (C) as an optional component. If necessary, other optional components such as plasticizers, other resin components such as epoxy resins, fluororesins, and olefin resins, curing accelerators, coupling agents, fillers, pigments, solvents, and flame retardants can be appropriately blended. However, some plasticizers contain a large number of polar groups, which may promote the diffusion of copper from the copper wiring, so it is preferable to avoid using plasticizers as much as possible.
本実施の形態の接着剤樹脂組成物は、これを用いて接着剤層を形成した場合に優れた柔軟性と熱可塑性を有するものとなり、例えばFPC、リジッド・フレックス回路基板などの配線部を保護するカバーレイフィルム用の接着剤として好ましい特性を有している。 When an adhesive layer is formed using the adhesive resin composition of this embodiment, it has excellent flexibility and thermoplasticity, and has favorable properties as an adhesive for coverlay films that protect wiring parts of FPCs, rigid-flex circuit boards, etc.
<カバーレイフィルム>
本実施の形態のカバーレイフィルムは、上記樹脂フィルム又は上記接着剤樹脂組成物からなる接着剤層と、カバーレイ用フィルム材層により構成されている。カバーレイ用フィルム材は、特に限定されないが、例えばポリイミド樹脂、ポリエーテルイミド樹脂、ポリアミドイミド樹脂等のポリイミド系樹脂フィルムや、ポリアミド系樹脂フィルム、ポリエステル系樹脂フィルムなどを用いることができる。これらの中でも、優れた耐熱性を持つポリイミド系樹脂フィルムを用いることが好ましい。カバーレイ用フィルム材層の厚みは、特に限定されるものではないが、例えば5μm以上100μm以下が好ましい。また、接着剤層の厚さは、特に限定されるものではないが、例えば10μm以上50μm以下が好ましい。
<Coverlay film>
The coverlay film of the present embodiment is composed of an adhesive layer made of the above-mentioned resin film or the above-mentioned adhesive resin composition, and a coverlay film material layer. The coverlay film material is not particularly limited, but for example, polyimide resin films such as polyimide resins, polyetherimide resins, polyamideimide resins, polyamide resin films, polyester resin films, etc. can be used. Among these, it is preferable to use a polyimide resin film having excellent heat resistance. The thickness of the coverlay film material layer is not particularly limited, but is preferably, for example, 5 μm or more and 100 μm or less. The thickness of the adhesive layer is not particularly limited, but is preferably, for example, 10 μm or more and 50 μm or less.
また、カバーレイ用フィルム材は、遮光性、隠蔽性、意匠性等を効果的に発現させるために、黒色顔料を含有することもでき、また誘電特性の改善効果を損なわない範囲で、表面の光沢を抑制するつや消し顔料などの任意成分を含むことができる。 The coverlay film material may also contain black pigments to effectively exhibit light-blocking properties, concealment properties, design properties, etc., and may also contain optional components such as matte pigments to suppress surface gloss, as long as the effect of improving the dielectric properties is not impaired.
本実施の形態のカバーレイフィルムは、例えば、以下に例示する方法で製造できる。
まず、第1の方法として、カバーレイ用のフィルム材の片面に接着剤層となる接着剤樹脂組成物を溶液の状態(例えば、溶剤を含有するワニス状)で塗布した後、例えば60~220℃の温度で熱圧着させることにより、カバーレイ用フィルム材層と接着剤層を有するカバーレイフィルムを形成できる。
The coverlay film of the present embodiment can be produced, for example, by the method exemplified below.
As a first method, an adhesive resin composition that will become the adhesive layer is applied in a solution state (e.g., a varnish-like state containing a solvent) to one side of a film material for a coverlay, and then the resulting film is thermocompressed at a temperature of, for example, 60 to 220°C to form a coverlay film having a film material layer for a coverlay and an adhesive layer.
また、第2の方法として、任意の基材上に、接着剤層用の接着剤樹脂組成物を溶液の状態(例えば、溶剤を含有するワニス状)で塗布し、例えば80~180℃の温度で乾燥した後、剥離することにより、接着剤層用の樹脂フィルムを形成し、この樹脂フィルムを、カバーレイ用のフィルム材と例えば60~220℃の温度で熱圧着させることによっても、本実施の形態のカバーレイフィルムを形成できる。なお、接着剤層は、任意の基材上に、例えばスクリーン印刷により接着剤樹脂組成物を溶液の状態で塗布して塗布膜を形成し、これを例えば80~180℃の温度で乾燥させてフィルム化して使用することもできる。 As a second method, the adhesive resin composition for the adhesive layer can be applied in a solution state (for example, in a varnish state containing a solvent) onto any substrate, dried at a temperature of, for example, 80 to 180°C, and then peeled off to form a resin film for the adhesive layer, and this resin film can be thermocompressed to a film material for the coverlay at a temperature of, for example, 60 to 220°C to form the coverlay film of this embodiment. Note that the adhesive layer can also be formed by applying the adhesive resin composition in a solution state onto any substrate, for example, by screen printing to form a coating film, and drying this at a temperature of, for example, 80 to 180°C to form a film for use.
<回路基板>
本実施の形態の回路基板は、基材と、該基材上に形成された配線層と、該配線層を被覆するカバーレイフィルムと、を備えている。回路基板の基材としては、特に限定する趣旨ではないが、FPCの場合は、上記カバーレイ用フィルム材と同様の材質を用いることが好ましく、ポリイミド系樹脂製の基材を用いることが好ましい。
<Circuit board>
The circuit board of the present embodiment includes a base material, a wiring layer formed on the base material, and a coverlay film that covers the wiring layer. The base material of the circuit board is not particularly limited, but in the case of an FPC, it is preferable to use a material similar to the above-mentioned coverlay film material, and it is preferable to use a base material made of a polyimide resin.
<樹脂付銅箔>
本実施の形態の樹脂付銅箔は、上記樹脂フィルム又は上記接着剤樹脂組成物からなる接着剤層と、銅箔と、備えている。
<Resin-coated copper foil>
The resin-coated copper foil of the present embodiment comprises an adhesive layer made of the above-mentioned resin film or the above-mentioned adhesive resin composition, and a copper foil.
接着剤層の厚みは、例えば0.1~125μmの範囲内にあることが好ましく、0.3~100μmの範囲内がより好ましい。接着剤層の厚みが上記下限値に満たないと、十分な接着性が担保出来なかったりするなどの問題が生じることがある。一方、接着剤層の厚みが上記上限値を超えると、寸法安定性が低下するなどの不具合が生じる。また、低誘電率化及び低誘電正接化の観点から、接着剤層の厚みは、3μm以上とすることが好ましい。 The thickness of the adhesive layer is preferably, for example, in the range of 0.1 to 125 μm, and more preferably in the range of 0.3 to 100 μm. If the thickness of the adhesive layer is less than the above lower limit, problems such as inability to ensure sufficient adhesion may occur. On the other hand, if the thickness of the adhesive layer exceeds the above upper limit, problems such as reduced dimensional stability may occur. Furthermore, from the viewpoint of achieving a low dielectric constant and a low dielectric loss tangent, the thickness of the adhesive layer is preferably 3 μm or more.
本実施の形態の樹脂付銅箔において、銅箔の材質としては、銅又は銅合金を主成分とするものが好ましい。銅箔の厚みは、好ましくは35μm以下であり、より好ましくは5~25μmの範囲内がよい。生産安定性及びハンドリング性の観点から、銅箔の厚みの下限値は5μmとすることが好ましい。なお、銅箔は圧延銅箔でも電解銅箔でもよい。また、銅箔としては、市販されている銅箔を用いることができる。 In the resin-coated copper foil of this embodiment, the material of the copper foil is preferably one whose main component is copper or a copper alloy. The thickness of the copper foil is preferably 35 μm or less, and more preferably in the range of 5 to 25 μm. From the viewpoint of production stability and handling, the lower limit of the copper foil thickness is preferably 5 μm. The copper foil may be a rolled copper foil or an electrolytic copper foil. In addition, commercially available copper foils can be used as the copper foil.
本実施の形態の樹脂付銅箔は、例えば、樹脂フィルムを用意し、金属をスパッタリングしてシード層を形成した後、例えば銅メッキによって銅層を形成することによって調製してもよく、銅箔と熱圧着などの方法でラミネートすることによって調製してもよい。 The resin-coated copper foil of this embodiment may be prepared, for example, by preparing a resin film, sputtering a metal to form a seed layer, and then forming a copper layer, for example, by copper plating, or by laminating it with copper foil by a method such as thermocompression bonding.
さらに、本実施の形態の樹脂付銅箔は、銅箔の上に樹脂層を形成するための塗布液をキャストし、乾燥して塗布膜とした後、熱処理することによって調製してもよい。 Furthermore, the resin-coated copper foil of this embodiment may be prepared by casting a coating liquid for forming a resin layer on the copper foil, drying it to form a coating film, and then heat treating it.
<金属張積層板>
本実施の形態の金属張積層板は、絶縁樹脂層と、前記絶縁樹脂層の少なくとも片側の面に積層された上記樹脂フィルム又は上記接着剤樹脂組成物からなる接着剤層と、前記接着剤層を介して前記絶縁樹脂層に積層された金属層と、を備えており、いわゆる3層金属張積層板である。3層金属張積層板は、接着剤層が、絶縁樹脂層の片面又は両面に設けられていればよく、金属層は、接着剤層を介して絶縁樹脂層の片面又は両面に設けられていればよい。つまり、本実施の形態の金属張積層板は、片面金属張積層板でもよいし、両面金属張積層板でもよい。本実施の形態の金属張積層板の金属層をエッチングするなどして配線回路加工することによって、片面FPC又は両面FPCを製造することができる。
<Metal-clad laminate>
The metal-clad laminate of the present embodiment includes an insulating resin layer, an adhesive layer made of the resin film or the adhesive resin composition laminated on at least one side of the insulating resin layer, and a metal layer laminated on the insulating resin layer via the adhesive layer, and is a so-called three-layer metal-clad laminate. The three-layer metal-clad laminate may have an adhesive layer on one or both sides of the insulating resin layer, and a metal layer on one or both sides of the insulating resin layer via the adhesive layer. In other words, the metal-clad laminate of the present embodiment may be a single-sided metal-clad laminate or a double-sided metal-clad laminate. A single-sided or double-sided FPC can be manufactured by processing the wiring circuit by etching the metal layer of the metal-clad laminate of the present embodiment.
絶縁樹脂層としては、電気的絶縁性を有する樹脂により構成されるものであれば特に限定はなく、例えばポリイミド、エポキシ樹脂、フェノール樹脂、ポリエチレン、ポリプロピレン、ポリテトラフルオロエチレン、シリコーン、ETFEなどを挙げることができるが、ポリイミドによって構成されることが好ましい。絶縁樹脂層を構成するポリイミド層は、単層でも複数層でもよいが、非熱可塑性ポリイミド層を含むことが好ましい。 The insulating resin layer is not particularly limited as long as it is made of a resin having electrical insulation properties, and examples thereof include polyimide, epoxy resin, phenolic resin, polyethylene, polypropylene, polytetrafluoroethylene, silicone, ETFE, etc., but it is preferable that it is made of polyimide. The polyimide layer constituting the insulating resin layer may be a single layer or multiple layers, but it is preferable that it includes a non-thermoplastic polyimide layer.
絶縁樹脂層の厚みは、例えば1~125μmの範囲内にあることが好ましく、5~100μmの範囲内がより好ましい。絶縁樹脂層の厚みが上記下限値に満たないと、十分な電気絶縁性が担保出来ないなどの問題が生じることがある。一方、絶縁樹脂層の厚みが上記上限値を超えると、金属張積層板の反りが生じやすくなるなどの不具合が生じる。また、絶縁樹脂層の厚みと接着剤層との厚みの比(絶縁樹脂層の厚み/接着剤層の厚み)は、0.5~2.0の範囲内が好ましい。このような比率にすることで、金属張積層板の反りを抑制することができる。 The thickness of the insulating resin layer is preferably in the range of 1 to 125 μm, and more preferably in the range of 5 to 100 μm. If the thickness of the insulating resin layer is less than the lower limit, problems such as insufficient electrical insulation may occur. On the other hand, if the thickness of the insulating resin layer exceeds the upper limit, problems such as the metal-clad laminate being more likely to warp may occur. In addition, the ratio of the thickness of the insulating resin layer to the thickness of the adhesive layer (thickness of the insulating resin layer/thickness of the adhesive layer) is preferably in the range of 0.5 to 2.0. By setting such a ratio, the warping of the metal-clad laminate can be suppressed.
絶縁樹脂層は、必要に応じて、フィラーを含有してもよい。フィラーとしては、例えば二酸化ケイ素、酸化アルミニウム、酸化マグネシウム、酸化ベリリウム、窒化ホウ素、窒化アルミニウム、窒化ケイ素、フッ化アルミニウム、フッ化カルシウム、有機ホスフィン酸の金属塩等が挙げられる。これらは1種又は2種以上を混合して用いることができる。 The insulating resin layer may contain a filler as necessary. Examples of fillers include silicon dioxide, aluminum oxide, magnesium oxide, beryllium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, calcium fluoride, and metal salts of organic phosphinic acid. These may be used alone or in combination of two or more.
接着剤層の厚みは、例えば0.1~125μmの範囲内にあることが好ましく、0.3~100μmの範囲内がより好ましい。本実施の形態の3層金属張積層板において、接着剤層の厚みが上記下限値に満たないと、十分な接着性が担保出来なかったりするなどの問題が生じることがある。一方、接着剤層の厚みが上記上限値を超えると、寸法安定性が低下するなどの不具合が生じる。また、絶縁樹脂層と接着剤層との積層体である絶縁層全体の低誘電率化及び低誘電正接化の観点から、接着剤層の厚みは、3μm以上とすることが好ましい。 The thickness of the adhesive layer is preferably, for example, in the range of 0.1 to 125 μm, and more preferably in the range of 0.3 to 100 μm. In the three-layer metal-clad laminate of this embodiment, if the thickness of the adhesive layer is less than the above-mentioned lower limit, problems such as inability to ensure sufficient adhesion may occur. On the other hand, if the thickness of the adhesive layer exceeds the above-mentioned upper limit, problems such as reduced dimensional stability may occur. Furthermore, from the viewpoint of reducing the dielectric constant and dielectric loss tangent of the entire insulating layer, which is a laminate of an insulating resin layer and an adhesive layer, the thickness of the adhesive layer is preferably 3 μm or more.
本実施の形態の金属張積層板における金属層の材質としては、特に制限はないが、例えば、銅、ステンレス、鉄、ニッケル、ベリリウム、アルミニウム、亜鉛、インジウム、銀、金、スズ、ジルコニウム、タンタル、チタン、鉛、マグネシウム、マンガン及びこれらの合金等が挙げられる。この中でも、特に銅又は銅合金が好ましい。 The material of the metal layer in the metal-clad laminate of this embodiment is not particularly limited, but examples include copper, stainless steel, iron, nickel, beryllium, aluminum, zinc, indium, silver, gold, tin, zirconium, tantalum, titanium, lead, magnesium, manganese, and alloys thereof. Among these, copper or copper alloys are particularly preferred.
金属層の厚みは特に限定されるものではないが、例えば金属層として銅箔を用いる場合、好ましくは35μm以下であり、より好ましくは5~25μmの範囲内がよい。生産安定性及びハンドリング性の観点から、銅箔の厚みの下限値は5μmとすることが好ましい。なお、銅箔を用いる場合は、圧延銅箔でも電解銅箔でもよい。また、銅箔としては、市販されている銅箔を用いることができる。 The thickness of the metal layer is not particularly limited, but for example, when copper foil is used as the metal layer, it is preferably 35 μm or less, and more preferably in the range of 5 to 25 μm. From the viewpoint of production stability and handling, it is preferable that the lower limit of the thickness of the copper foil is 5 μm. When copper foil is used, it may be rolled copper foil or electrolytic copper foil. In addition, commercially available copper foil may be used as the copper foil.
金属層として、銅箔を用いる場合、該銅箔は、母材銅箔と、前記母材銅箔における接着剤層(又は絶縁樹脂層)形成面側の表面上に形成された防錆処理層を備えていることが好ましい。また、上記防錆処理のほかに、接着力の向上を目的として、銅箔の表面に、例えばサイディング、アルミニウムアルコラート、アルミニウムキレート、シランカップリング剤等による表面処理を施してもよい。 When copper foil is used as the metal layer, it is preferable that the copper foil comprises a base copper foil and an anti-rust treatment layer formed on the surface of the base copper foil on the side on which the adhesive layer (or insulating resin layer) is formed. In addition to the above-mentioned anti-rust treatment, the surface of the copper foil may be subjected to a surface treatment, for example, with siding, aluminum alcoholate, aluminum chelate, silane coupling agent, etc., in order to improve adhesive strength.
<多層回路基板>
本実施の形態の多層回路基板は、積層された複数の絶縁樹脂層を含む積層体と、該積層体の内部に埋め込まれた1層以上の導体回路層と、を備え、前記複数の絶縁樹脂層のうちの少なくとも一層以上が、接着性を有するとともに前記導体回路層を被覆する接着剤層により形成されており、前記接着剤層が、上記樹脂フィルム又は上記接着剤樹脂組成物からなるものである。
<Multilayer circuit board>
The multilayer circuit board of the present embodiment comprises a laminate including a plurality of stacked insulating resin layers, and one or more conductor circuit layers embedded inside the laminate, at least one of the plurality of insulating resin layers being formed of an adhesive layer having adhesive properties and covering the conductor circuit layer, the adhesive layer being made of the above-mentioned resin film or the above-mentioned adhesive resin composition.
本実施の形態の多層回路基板は、少なくとも2層以上の絶縁樹脂層及び少なくも2層以上の導体回路層を有するものであり、前記導体回路層の少なくとも1層は接着剤層で被覆される導体回路層である。導体回路層を被覆する接着剤層は、導体回路層の表面を部分的に被覆するものでもよいし、導体回路層の全表面に亘って被覆するものでもよい。また、本実施の形態の多層回路基板は、任意に多層回路基板の表面に露出する導体回路層を有してもよい。また、導体回路層に接する層間接続電極(ビア電極)を有しても良い。 The multilayer circuit board of this embodiment has at least two insulating resin layers and at least two conductor circuit layers, and at least one of the conductor circuit layers is a conductor circuit layer covered with an adhesive layer. The adhesive layer covering the conductor circuit layer may partially cover the surface of the conductor circuit layer, or may cover the entire surface of the conductor circuit layer. In addition, the multilayer circuit board of this embodiment may optionally have a conductor circuit layer exposed on the surface of the multilayer circuit board. It may also have an interlayer connection electrode (via electrode) in contact with the conductor circuit layer.
導体回路層は、絶縁樹脂層の片面又は両面に所定のパターンで導体回路が形成されたものである。また、導体回路は、絶縁樹脂層の表面のパターン形成でもよいし、ダマシン(埋め込み)式のパターン形成でもよい。 The conductor circuit layer is formed by forming a conductor circuit in a predetermined pattern on one or both sides of an insulating resin layer. The conductor circuit may be formed by patterning the surface of the insulating resin layer, or by damascene (embedded) patterning.
以下に実施例を示し、本発明の特徴をより具体的に説明する。ただし、本発明の範囲は、実施例に限定されない。なお、以下の実施例において、特にことわりのない限り各種測定、評価は下記によるものである。 The following examples are provided to more specifically explain the features of the present invention. However, the scope of the present invention is not limited to these examples. In the following examples, unless otherwise specified, the various measurements and evaluations were performed as follows.
[アミン価の測定方法]
約2gのダイマージアミン組成物を200~250mLの三角フラスコに秤量し、指示薬としてフェノールフタレインを用い、溶液が薄いピンク色を呈するまで、0.1mol/Lのエタノール性水酸化カリウム溶液を滴下し、中和を行ったブタノール約100mLに溶解させる。そこに3~7滴のフェノールフタレイン溶液を加え、サンプルの溶液が薄いピンク色に変わるまで、0.1mol/Lのエタノール性水酸化カリウム溶液で攪拌しながら滴定する。そこへブロモフェノールブルー溶液を5滴加え、サンプル溶液が黄色に変わるまで、0.2mol/Lの塩酸/イソプロパノール溶液で攪拌しながら滴定する。
アミン価は、次の式(1)により算出する。
アミン価={(V2×C2)-(V1×C1)}×MKOH/m ・・・(1)
ここで、アミン価はmg-KOH/gで表される値であり、MKOHは水酸化カリウムの分子量56.1である。また、V、Cはそれぞれ滴定に用いた溶液の体積と濃度であり、添え字の1、2はそれぞれ0.1mol/Lエタノール性水酸化カリウム溶液、0.2mol/Lの塩酸/イソプロパノール溶液を表す。さらに、mはグラムで表されるサンプル重量である。
[Method for measuring amine value]
Approximately 2 g of the dimer diamine composition is weighed into a 200-250 mL Erlenmeyer flask, and phenolphthalein is used as an indicator. A 0.1 mol/L ethanolic potassium hydroxide solution is added dropwise until the solution turns light pink, and the composition is dissolved in approximately 100 mL of neutralized butanol. 3-7 drops of phenolphthalein solution are added thereto, and titration is performed with 0.1 mol/L ethanolic potassium hydroxide solution while stirring until the sample solution turns light pink. Five drops of bromophenol blue solution are added thereto, and titration is performed with 0.2 mol/L hydrochloric acid/isopropanol solution while stirring until the sample solution turns yellow.
The amine value is calculated according to the following formula (1).
Amine value = {(V 2 × C 2 ) - (V 1 × C 1 )} × M KOH / m (1)
Here, the amine value is a value expressed in mg-KOH/g, M KOH is the molecular weight of potassium hydroxide, 56.1, V and C are the volume and concentration of the solution used in the titration, respectively, and the subscripts 1 and 2 represent a 0.1 mol/L ethanolic potassium hydroxide solution and a 0.2 mol/L hydrochloric acid/isopropanol solution, respectively, and m is the sample weight expressed in grams.
[ポリイミドの重量平均分子量(Mw)の測定]
重量平均分子量は、ゲル浸透クロマトグラフ(東ソー株式会社製、HLC-8220GPCを使用)により測定した。標準物質としてポリスチレンを用い、展開溶媒にテトラヒドロフラン(THF)を用いた。
[Measurement of weight average molecular weight (Mw) of polyimide]
The weight average molecular weight was measured by gel permeation chromatography (HLC-8220GPC, manufactured by Tosoh Corporation). Polystyrene was used as a standard substance, and tetrahydrofuran (THF) was used as a developing solvent.
[GPC及びクロマトグラムの面積パーセントの算出]
GPCは、20mgのダイマージアミン組成物を200μLの無水酢酸、200μLのピリジン及び2mLのTHFで前処理した100mgの溶液を、10mLのTHF(1000ppmのシクロヘキサノンを含有)で希釈し、サンプルを調製した。調製したサンプルを東ソー株式会社製、商品名;HLC-8220GPCを用いて、カラム:TSK-gel G2000HXL,G1000HXL、フロー量:1mL/min、カラム(オーブン)温度:40℃、注入量:50μLの条件で測定した。なお、シクロヘキサノンは流出時間の補正のために標準物質として扱った。
[GPC and Chromatogram Area Percentage Calculation]
For GPC, 20 mg of the dimer diamine composition was pretreated with 200 μL of acetic anhydride, 200 μL of pyridine, and 2 mL of THF to prepare a 100 mg solution, which was then diluted with 10 mL of THF (containing 1000 ppm of cyclohexanone). The prepared sample was measured using a Tosoh Corporation product name: HLC-8220GPC under the following conditions: column: TSK-gel G2000HXL, G1000HXL, flow rate: 1 mL/min, column (oven) temperature: 40° C., injection amount: 50 μL. Cyclohexanone was treated as a standard substance for the correction of the elution time.
このとき、シクロヘキサノンのメインピークのピークトップがリテンションタイム27分から31分になるように、且つ、前記シクロヘキサノンのメインピークのピークスタートからピークエンドが2分になるように調整し、シクロヘキサノンのピークを除くメインピークのピークトップが18分から19分になるように、且つ、前記シクロヘキサノンのピークを除くメインピークのピークスタートからピークエンドまでが2分から4分30秒となる条件で、各成分(a)~(c);
(a)メインピークで表される成分;
(b)メインピークにおけるリテンションタイムが遅い時間側の極小値を基準にし、それよりも遅い時間に検出されるGPCピークで表される成分;
(c)メインピークにおけるリテンションタイムが早い時間側の極小値を基準にし、それよりも早い時間に検出されるGPCピークで表される成分;
を検出した。
In this case, the retention times were adjusted so that the peak top of the cyclohexanone main peak was at a retention time of 27 to 31 minutes, and the period from the peak start to the peak end of the cyclohexanone main peak was 2 minutes, and the peak top of the main peak excluding the cyclohexanone peak was at a retention time of 18 to 19 minutes, and the period from the peak start to the peak end of the main peak excluding the cyclohexanone peak was at a retention time of 2 minutes to 4 minutes 30 seconds,
(a) Component represented by the main peak;
(b) A component represented by a GPC peak detected at a time later than the minimum retention time of the main peak;
(c) a component represented by a GPC peak detected at a time earlier than the minimum retention time of the main peak;
was detected.
[誘電特性評価]
ベクトルネットワークアナライザ(Agilent社製、商品名;ベクトルネットワークアナライザE8363C)およびSPDR共振器を用いて樹脂シート(硬化後の樹脂シート)を温度;23℃、湿度;50%の条件下で、24時間放置した後、周波数10GHzにおける誘電率(ε1)および誘電正接(Tanδ1)を測定した。樹脂積層体の誘電特性を示す指標であるE1は、上記数式(i)に基づき算出した。また、23℃、24時間吸水後、樹脂シート(硬化後の樹脂シート)の周波数10GHzにおける誘電率(ε2)および誘電正接(Tanδ2)を測定した。樹脂積層体の誘電特性を示す指標であるE2は、上記数式(ii)に基づき算出した。
[Dielectric property evaluation]
Using a vector network analyzer (manufactured by Agilent, product name: Vector Network Analyzer E8363C) and an SPDR resonator, the resin sheet (resin sheet after curing) was left for 24 hours under conditions of temperature: 23°C and humidity: 50%, and then the dielectric constant (ε 1 ) and dielectric loss tangent (Tan δ 1 ) at a frequency of 10 GHz were measured. E 1 , which is an index showing the dielectric properties of the resin laminate, was calculated based on the above formula (i). In addition, after absorbing water at 23°C for 24 hours, the dielectric constant (ε 2 ) and dielectric loss tangent (Tan δ 2 ) at a frequency of 10 GHz of the resin sheet (resin sheet after curing) were measured. E 2 , which is an index showing the dielectric properties of the resin laminate, was calculated based on the above formula (ii).
[吸湿率の測定]
樹脂シート(硬化後の樹脂シート)の試験片(幅4cm×長さ25cm)を2枚用意し、80℃で1時間乾燥した。乾燥後直ちに23℃/50%RHの恒温恒湿室に入れ、24時間以上静置し、その前後の重量変化から次式により求めた。
吸湿率(重量%)=[(吸湿後重量-乾燥後重量)/乾燥後重量]×100
[Measurement of moisture absorption rate]
Two test pieces (4 cm wide × 25 cm long) of the resin sheet (resin sheet after curing) were prepared and dried for 1 hour at 80° C. Immediately after drying, they were placed in a constant temperature and humidity chamber at 23° C./50% RH and left to stand for 24 hours or more, and the weight change before and after was calculated according to the following formula.
Moisture absorption rate (weight%) = [(weight after moisture absorption - weight after drying) / weight after drying] x 100
[ガラス転移温度(Tg)及び貯蔵弾性率]
ガラス転移温度(Tg)及び貯蔵弾性率は、5mm×20mmのサイズの樹脂シート(硬化後の樹脂シート)を、動的粘弾性測定装置(DMA:ユー・ビー・エム社製、商品名;E4000F)を用いて、30℃から400℃まで昇温速度4℃/分、周波数11Hzで測定を行った。弾性率変化(tanδ)が最大となる温度をガラス転移温度とした。
[Glass transition temperature (Tg) and storage modulus]
The glass transition temperature (Tg) and storage modulus were measured using a 5 mm x 20 mm resin sheet (cured resin sheet) at a heating rate of 4°C/min from 30°C to 400°C and a frequency of 11 Hz using a dynamic viscoelasticity measuring device (DMA: manufactured by UBM, product name: E4000F). The temperature at which the change in modulus (tan δ) was maximum was taken as the glass transition temperature.
[引張り弾性率]
引張り弾性率は、以下の手順で測定した。まず、テンションテスター(オリエンテック製テンシロン)を用いて、樹脂シート(硬化後の樹脂シート)から、試験片(幅12.7mm×長さ127mm)を作製した。この試験片を用い、50mm/minで引張り試験を行い、25℃における引張り弾性率を求めた。
[Tensile modulus]
The tensile modulus was measured by the following procedure. First, a test piece (width 12.7 mm x length 127 mm) was prepared from the resin sheet (resin sheet after curing) using a tension tester (Tensilon manufactured by Orientec). A tensile test was performed at 50 mm/min using this test piece to determine the tensile modulus at 25°C.
[反りの評価方法]
反りの評価は、以下の方法で行った。厚さ25μmのカプトンフィルム上、または12μmの銅箔上に乾燥後の厚さが25μmになるようにポリイミド接着剤を塗布した。この状態でカプトンフィルム及び銅箔が下面になるように置き、フィルムの4隅の反り上がっている高さの平均を測定し、5mm以下を「良」、5mmを超える場合を「不可」とした。
[Warpage evaluation method]
The evaluation of warpage was carried out by the following method. A polyimide adhesive was applied to a 25 μm thick Kapton film or a 12 μm thick copper foil so that the thickness after drying was 25 μm. In this state, the Kapton film and the copper foil were placed on the bottom, and the average height of the warpage at the four corners of the film was measured. A value of 5 mm or less was rated as "good", and a value of more than 5 mm was rated as "no good".
本実施例で用いた略号は以下の化合物を示す。
BTDA:3,3’,4,4’-ベンゾフェノンテトラカルボン酸二無水物(エボニック社製、商品名;BTDA Ultra Pure)
BisDA:4,4‘-[プロパン―2,2-ジイルビス(1,4-フェニレンオキシ)]ジフタル酸二無水物(SABICイノベーティブプラスチックスジャパン合同会社製、商品名;BisDA-1000)
BPDA:3,3’,4,4’-ビフェニルテトラカルボン酸二無水物
ODPA:4,4’-オキシジフタル酸無水物
DDA1:クローダジャパン株式会社製、商品名;PRIAMINE1075を蒸留精製したもの(a成分;98.2重量%、b成分:0%、c成分;1.9%、アミン価:206mg KOH/g)
DDA2:クローダジャパン株式会社製、商品名;PRIAMINE1075を蒸留精製したもの(a成分;99.2重量%、b成分:0%、c成分;0.8%、アミン価:210mg KOH/g)
N-12:ドデカン二酸ジヒドラジド
NMP:N-メチル-2-ピロリドン
APB:1,3-ビス(3‐アミノフェノキシ)ベンゼン
BAPP:2,2-ビス[4-(4-アミノフェノキシ)フェニル]プロパン
なお、上記DDA1及びDDA2において、b成分、c成分の「%」は、GPC測定におけるクロマトグラムの面積パーセントを意味する。また、DDA1及びDDA2の分子量は下記式(1)により算出した。
分子量=56.1×2×1000/アミン価・・・(1)
The abbreviations used in the examples represent the following compounds.
BTDA: 3,3',4,4'-benzophenonetetracarboxylic dianhydride (manufactured by Evonik, trade name: BTDA Ultra Pure)
BisDA: 4,4'-[propane-2,2-diylbis(1,4-phenyleneoxy)]diphthalic dianhydride (manufactured by SABIC Innovative Plastics Japan, LLC, product name: BisDA-1000)
BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride ODPA: 4,4'-oxydiphthalic anhydride DDA1: product name: PRIAMINE 1075 manufactured by Croda Japan Co., Ltd., distilled and purified (component a: 98.2% by weight, component b: 0%, component c: 1.9%, amine value: 206 mg KOH/g)
DDA2: product name: PRIAMINE 1075 manufactured by Croda Japan Co., Ltd., distilled and purified (component a: 99.2% by weight, component b: 0%, component c: 0.8%, amine value: 210 mg KOH/g)
N-12: Dodecanedioic acid dihydrazide NMP: N-methyl-2-pyrrolidone APB: 1,3-bis(3-aminophenoxy)benzene BAPP: 2,2-bis[4-(4-aminophenoxy)phenyl]propane In the above DDA1 and DDA2, the "%" of component b and component c means the area percentage of the chromatogram in GPC measurement. The molecular weights of DDA1 and DDA2 were calculated by the following formula (1).
Molecular weight = 56.1 × 2 × 1000 / amine value (1)
[実施例1]
1000mlのセパラブルフラスコに、55.51gのBTDA(0.1721モル)、94.49gのDDA1(0.1735モル)、210gのNMP及び140gのキシレンを装入し、40℃で1時間良く混合して、ポリアミド酸溶液を調製した。このポリアミド酸溶液を190℃に昇温し、10時間加熱、攪拌し、125gのキシレンを加えてイミド化を完結したポリイミド溶液1(固形分;30重量%、重量平均分子量;82,900)を調製した。
[Example 1]
A polyamic acid solution was prepared by charging 55.51 g of BTDA (0.1721 mol), 94.49 g of DDA1 (0.1735 mol), 210 g of NMP, and 140 g of xylene into a 1000 ml separable flask and thoroughly mixing for 1 hour at 40° C. This polyamic acid solution was heated to 190° C. and heated and stirred for 10 hours, and 125 g of xylene was added to complete the imidization, preparing polyimide solution 1 (solid content: 30 wt %, weight average molecular weight: 82,900).
[実施例2~12]
表1に示す原料組成とした他は、実施例1と同様にしてポリイミド溶液2~12を調製した。
[Examples 2 to 12]
Polyimide solutions 2 to 12 were prepared in the same manner as in Example 1, except that the raw material compositions shown in Table 1 were used.
表1に示すように、実施例1~12では、重量平均分子量が40,000~150,000の範囲内のポリイミドが得られた。 As shown in Table 1, in Examples 1 to 12, polyimides with weight average molecular weights in the range of 40,000 to 150,000 were obtained.
[実施例13]
実施例1で得られたポリイミド溶液1の169.49g(固形分として50g)に2.7gのN-12(0.0105モル;BTDAのケトン基1モルに対して第1級のアミノ基が0.35モルに相当)を配合し、6.0gのNMPを加えて希釈し、更に1時間攪拌することで接着剤樹脂組成物1を得た。
[Example 13]
2.7 g of N-12 (0.0105 mol; equivalent to 0.35 mol of primary amino groups per 1 mol of ketone groups of BTDA) was mixed with 169.49 g (50 g as solid content) of the polyimide solution 1 obtained in Example 1, and 6.0 g of NMP was added to dilute the mixture, followed by stirring for another 1 hour to obtain an adhesive resin composition 1.
得られた接着剤樹脂組成物1を離型PETフィルム(東山フィルム社製、商品名;HY-S05、縦×横×厚さ=200mm×300mm×25μm)の片面に塗布し、80℃で15分間乾燥を行い、接着剤層を離型PETフィルムから剥離することによって、厚さが25μmの樹脂フィルム1を調製した。この樹脂フィルム1をオーブンにて温度160℃、2時間の条件で加熱し、評価サンプル1を得た。各種特性評価結果は表2に示す。 The obtained adhesive resin composition 1 was applied to one side of a release PET film (Higashiyama Film Co., Ltd., product name: HY-S05, length x width x thickness = 200 mm x 300 mm x 25 μm), dried at 80°C for 15 minutes, and the adhesive layer was peeled off from the release PET film to prepare a resin film 1 with a thickness of 25 μm. This resin film 1 was heated in an oven at a temperature of 160°C for 2 hours to obtain an evaluation sample 1. The results of the evaluation of various characteristics are shown in Table 2.
[実施例14~24]
ポリイミド溶液1に替えて、ポリイミド溶液2~12を使用した以外は、実施例13と同様にして接着剤樹脂組成物2~12及び樹脂フィルム2~12を調製した後、評価サンプル2~12を得た。各種特性評価結果は表2に示す。
[Examples 14 to 24]
Adhesive resin compositions 2 to 12 and resin films 2 to 12 were prepared in the same manner as in Example 13, except that polyimide solutions 2 to 12 were used instead of polyimide solution 1, and then evaluation samples 2 to 12 were obtained. The results of the evaluation of various characteristics are shown in Table 2.
[実施例25]
実施例13で得られた接着剤樹脂組成物1をポリイミドフィルム(デュポン社製、商品名;カプトン100EN‐S、ε1=3.5、tanδ1=0.012、縦×横×厚さ=200mm×300mm×25μm)の片面に塗布し、80℃で15分間乾燥を行い、接着剤層の厚さが25μmのカバーレイフィルム1を得た。得られたカバーレイフィルムの反りの状態は「良」であった。
[Example 25]
The adhesive resin composition 1 obtained in Example 13 was applied to one side of a polyimide film (manufactured by DuPont, product name: Kapton 100EN-S, ε1 = 3.5, tan δ1 = 0.012, length × width × thickness = 200 mm × 300 mm × 25 μm) and dried at 80° C. for 15 minutes to obtain a coverlay film 1 having an adhesive layer thickness of 25 μm. The warpage state of the obtained coverlay film was "good".
[実施例26~36]
接着剤樹脂組成物1に替えて、接着剤樹脂組成物2~12を使用した他は、実施例25と同様にしてカバーレイフィルム2~12を作製した。得られたカバーレイフィルム2~12の反りの状態は、いずれも「良」であった。
[Examples 26 to 36]
Coverlay films 2 to 12 were produced in the same manner as in Example 25, except that adhesive resin compositions 2 to 12 were used instead of adhesive resin composition 1. The warpage state of the obtained coverlay films 2 to 12 was all "good".
[実施例37]
実施例13で得られた接着剤樹脂組成物1を厚み12μmの電解銅箔の片面に塗布し、80℃で15分間乾燥を行い、接着剤層の厚さが25μmの樹脂付銅箔1を得た。得られた樹脂付銅箔1の反りの状態は「良」であった。
[Example 37]
The adhesive resin composition 1 obtained in Example 13 was applied to one side of an electrolytic copper foil having a thickness of 12 μm and dried at 80° C. for 15 minutes to obtain a resin-coated copper foil 1 having an adhesive layer thickness of 25 μm. The warpage state of the resin-coated copper foil 1 obtained was “good”.
[実施例38]
実施例16で得られた接着剤樹脂組成物4を厚み12μmの電解銅箔の片面に塗布し、80℃で30分間乾燥を行い、接着剤層の厚さが50μmの樹脂付銅箔2を得た。
[Example 38]
The adhesive resin composition 4 obtained in Example 16 was applied to one side of an electrolytic copper foil having a thickness of 12 μm and dried at 80° C. for 30 minutes to obtain a resin-coated copper foil 2 having an adhesive layer thickness of 50 μm.
[実施例39]
実施例38で得られた樹脂付銅箔2の樹脂表面上に、接着剤樹脂組成物4を塗布し、80℃30分間乾燥を行い、接着剤層の厚さが合計100μmの樹脂付銅箔3を得た。
[Example 39]
An adhesive resin composition 4 was applied onto the resin surface of the resin-coated copper foil 2 obtained in Example 38, and dried at 80° C. for 30 minutes to obtain a resin-coated copper foil 3 having an adhesive layer thickness of 100 μm in total.
[実施例40]
実施例13で得られた接着剤樹脂組成物1を離型PETフィルム(東山フィルム社製、商品名;HY-S05、縦×横×厚さ=200mm×300mm×25μm)の片面に塗布し、80℃で30分間乾燥を行い、接着剤層を離型PETフィルムから剥離することによって、厚さが50μmの樹脂フィルム1’を得た。厚み12μmの電解銅箔上に、樹脂フィルム1’、ポリイミドフィルム(デュポン社製、商品名;カプトン100-EN、厚み25μm、ε1=3.6、tanδ1=0.084)、樹脂フィルム1’及び厚み12μmの電解銅箔を順次積層して、真空ラミネーターを用いて温度160℃、圧力0.8MPa、2分間圧着した後、160℃で4時間熱処理して、銅張積層板1を得た。
[Example 40]
The adhesive resin composition 1 obtained in Example 13 was applied to one side of a release PET film (Higashiyama Film Co., Ltd., product name: HY-S05, length x width x thickness = 200 mm x 300 mm x 25 μm), dried at 80 ° C. for 30 minutes, and the adhesive layer was peeled off from the release PET film to obtain a resin film 1' having a thickness of 50 μm. On an electrolytic copper foil having a thickness of 12 μm, a resin film 1', a polyimide film (manufactured by DuPont, product name: Kapton 100-EN, thickness 25 μm, ε1 = 3.6, tan δ1 = 0.084), a resin film 1', and an electrolytic copper foil having a thickness of 12 μm were sequentially laminated, and the laminate was pressed at a temperature of 160 ° C. and a pressure of 0.8 MPa for 2 minutes using a vacuum laminator, and then heat-treated at 160 ° C. for 4 hours to obtain a copper-clad laminate 1.
[実施例41]
実施例13で得られた接着剤樹脂組成物1をポリイミドフィルム(デュポン社製、商品名;カプトン50EN、ε1=3.6、tanδ1=0.086、縦×横×厚さ=200mm×300mm×12μm)の片面に塗布し、80℃で15分間乾燥を行い、接着剤の層厚さが25μmのカバーレイフィルム1’とした。厚み12μmの電解銅箔上に、カバーレイフィルム1’の接着剤樹脂組成物1側が銅箔に接するよう積層して、真空ラミネーターを用いて温度160℃、圧力0.8MPa、2分間圧着した後、160℃で2時間熱処理して、銅張積層板2を得た。
[Example 41]
The adhesive resin composition 1 obtained in Example 13 was applied to one side of a polyimide film (manufactured by DuPont, product name: Kapton 50EN, ε1 = 3.6, tan δ1 = 0.086, length x width x thickness = 200 mm x 300 mm x 12 μm), and dried at 80 ° C for 15 minutes to obtain a coverlay film 1' with an adhesive layer thickness of 25 μm. The coverlay film 1' was laminated on an electrolytic copper foil with a thickness of 12 μm so that the adhesive resin composition 1 side of the coverlay film 1' was in contact with the copper foil, and the film was pressed using a vacuum laminator at a temperature of 160 ° C and a pressure of 0.8 MPa for 2 minutes, and then heat-treated at 160 ° C for 2 hours to obtain a copper-clad laminate 2.
[実施例42]
厚み12μmの圧延銅箔上に、実施例13で得た樹脂フィルム1(厚み;25μm)、実施例41で得たカバーレイフィルム1’のポリイミドフィルム側が樹脂フィルム1に接するように積層し、さらに樹脂フィルム1(厚み;25μm)、厚み12μmの圧延銅箔を順次積層して、真空ラミネーターを用いて温度160℃、圧力0.8MPa、2分間圧着した後、160℃で2時間熱処理して、銅張積層板3を得た。
[Example 42]
On a rolled copper foil having a thickness of 12 μm, the resin film 1 (thickness: 25 μm) obtained in Example 13 and the coverlay film 1' obtained in Example 41 were laminated so that the polyimide film side was in contact with the resin film 1, and then the resin film 1 (thickness: 25 μm) and a rolled copper foil having a thickness of 12 μm were laminated in that order, and the resultant was pressed using a vacuum laminator at a temperature of 160° C. and a pressure of 0.8 MPa for 2 minutes, and then heat-treated at 160° C. for 2 hours to obtain a copper-clad laminate 3.
[実施例43]
実施例39で得た樹脂付銅箔3を2枚用意し、そのうちの1枚の樹脂付銅箔3の接着剤樹脂組成物4側にポリイミドフィルム(デュポン社製、商品名;カプトン200-EN、厚み50μm、ε1=3.6、tanδ1=0.084)を積層し、さらにもう1枚の樹脂付銅箔3を、その接着剤樹脂組成物4側がポリイミドフィルムに接するように積層して、真空ラミネーターを用いて温度160℃、圧力0.8MPa、5分間圧着した後、160℃で4時間熱処理して、銅張積層板4を得た。
[Example 43]
Two sheets of the resin-coated copper foil 3 obtained in Example 39 were prepared, and a polyimide film (manufactured by DuPont, product name: Kapton 200-EN, thickness 50 μm, ε1 = 3.6, tan δ1 = 0.084) was laminated on the adhesive resin composition 4 side of one of the resin-coated copper foils 3, and another sheet of resin-coated copper foil 3 was laminated so that the adhesive resin composition 4 side was in contact with the polyimide film, and the laminate was pressed using a vacuum laminator at a temperature of 160°C and a pressure of 0.8 MPa for 5 minutes, and then heat-treated at 160°C for 4 hours to obtain a copper-clad laminate 4.
[実施例44]
実施例13で得られた接着剤樹脂組成物1を片面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFC12-25-00UEJ、縦×横×厚さ=200mm×300mm×25μm)のポリイミド側に塗布し、80℃で30分間乾燥を行い、接着剤層の厚さが50μmの接着剤付銅張積層板1を得た。接着剤付銅張積層板1の接着剤樹脂組成物1側に片面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFC12-25-00UEJ)のポリイミドが接するように積層して、小型精密プレス機を用いて温度160℃、圧力4.0MPa、120分間圧着して、銅張積層板5を得た。
[Example 44]
The adhesive resin composition 1 obtained in Example 13 was applied to the polyimide side of a single-sided copper-clad laminate (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FC12-25-00UEJ, length x width x thickness = 200 mm x 300 mm x 25 μm) and dried at 80 ° C. for 30 minutes to obtain an adhesive-coated copper-clad laminate 1 having an adhesive layer thickness of 50 μm. The single-sided copper-clad laminate (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FC12-25-00UEJ) was laminated so that the polyimide of the single-sided copper-clad laminate was in contact with the adhesive resin composition 1 side of the adhesive-coated copper-clad laminate 1, and the laminate was pressed at a temperature of 160 ° C. and a pressure of 4.0 MPa for 120 minutes using a small precision press to obtain a copper-clad laminate 5.
[実施例45]
実施例44で得られた接着剤付銅張積層板1同士を接着剤樹脂組成物1側が接するように積層して、小型精密プレス機を用いて温度160℃、圧力4.0MPa、120分間圧着して、銅張積層板6を得た。
[Example 45]
The adhesive-coated copper-clad laminates 1 obtained in Example 44 were laminated together with the adhesive resin composition 1 sides in contact, and then pressed using a small precision press at a temperature of 160°C and a pressure of 4.0 MPa for 120 minutes to obtain copper-clad laminate 6.
[実施例46]
片面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFC12-25-00UEJ)のポリイミド側に、実施例16で得られた樹脂フィルム4(厚み25μm)を積層し、さらに片面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFC12-25-00UEJ)のポリイミド側が樹脂フィルム4と接するように積層して、小型精密プレス機を用いて温度160℃、圧力4.0MPa、120分間圧着して、銅張積層板7を得た。
[Example 46]
The resin film 4 (thickness 25 μm) obtained in Example 16 was laminated on the polyimide side of a single-sided copper-clad laminate (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FC12-25-00UEJ), and further laminated so that the polyimide side of a single-sided copper-clad laminate (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FC12-25-00UEJ) was in contact with the resin film 4, and the laminate was pressed using a small precision press at a temperature of 160° C. and a pressure of 4.0 MPa for 120 minutes to obtain a copper-clad laminate 7.
[実施例47]
実施例13で得た接着剤樹脂組成物1を離型PETフィルム(東山フィルム社製、商品名;HY-S05、縦×横×厚さ=200mm×300mm×25μm)の片面に塗布し、80℃で15分間乾燥を行い、接着剤層を離型PETフィルムから剥離することによって、厚さが15μmの樹脂フィルム1’’を得た。片面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFC12-25-00UEJ)のポリイミド側に、樹脂フィルム1’’を積層し、さらに片面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFC12-25-00UEJ)のポリイミド側が樹脂フィルム1’’と接するように積層して、小型精密プレス機を用いて温度160℃、圧力4.0MPa、120分間圧着して、銅張積層板8を得た。
[Example 47]
The adhesive resin composition 1 obtained in Example 13 was applied to one side of a release PET film (Higashiyama Film Co., Ltd., product name: HY-S05, length x width x thickness = 200 mm x 300 mm x 25 μm), dried at 80 ° C. for 15 minutes, and the adhesive layer was peeled off from the release PET film to obtain a resin film 1 ″ having a thickness of 15 μm. The resin film 1 ″ was laminated on the polyimide side of a single-sided copper-clad laminate (Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FC12-25-00UEJ), and further laminated so that the polyimide side of the single-sided copper-clad laminate (Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FC12-25-00UEJ) was in contact with the resin film 1 ″, and pressed using a small precision press at a temperature of 160 ° C. and a pressure of 4.0 MPa for 120 minutes to obtain a copper-clad laminate 8.
[実施例48]
両面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFB12-25-00UEY)を準備し、その片面の銅箔にエッチングによる回路加工を施し、導体回路層を形成した配線基板1を調製した。併せて、両面銅張積層板(日鉄ケミカル&マテリアル社製、商品名;エスパネックスFB12-25-00UEY)の片面の銅箔をエッチング除去し、銅張積層板9を調製した。配線基板1の導体回路層側の面と、銅張積層板9の絶縁性基材層側の面との間に実施例13で得られた樹脂フィルム1を挟み、積層した状態で、温圧力4.0MPa、120分間熱圧着して、多層回路基板1を調製した。
[Example 48]
A double-sided copper-clad laminate (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FB12-25-00UEY) was prepared, and the copper foil on one side of the laminate was subjected to circuit processing by etching to form a conductor circuit layer, thereby preparing a wiring board 1. In addition, the copper foil on one side of the double-sided copper-clad laminate (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ESPANEX FB12-25-00UEY) was removed by etching to prepare a copper-clad laminate 9. The resin film 1 obtained in Example 13 was sandwiched between the surface of the conductor circuit layer side of the wiring board 1 and the surface of the insulating base material layer side of the copper-clad laminate 9, and in the laminated state, the two were thermocompressed at a temperature and pressure of 4.0 MPa for 120 minutes to prepare a multilayer circuit board 1.
[実施例49]
液晶ポリマーフィルム(クラレ社製、商品名;CT-Z、厚さ;50μm、CTE;18ppm/K、熱変形温度;300℃、誘電率;3.40、誘電正接;0.0022)を絶縁性基材とし、その両面に銅箔(電解銅箔、厚さ;9μm、表面粗度Rz;2.0μm)が設けられた銅張積層板10を準備し、その片面の銅箔にエッチングによる回路加工を施し、導体回路層を形成した配線基板2を調製した。併せて、銅張積層板10の片面の銅箔をエッチング除去し、銅張積層板10’を調製した。配線基板2の導体回路層側の面と、銅張積層板10’の絶縁性基材層側の面との間に実施例13で得られた樹脂フィルム1を挟み、積層した状態で、温圧力4.0MPa、120分間熱圧着して、多層回路基板2を調製した。
[Example 49]
A copper-clad laminate 10 was prepared using an insulating substrate made of a liquid crystal polymer film (manufactured by Kuraray Co., Ltd., product name: CT-Z, thickness: 50 μm, CTE: 18 ppm/K, heat distortion temperature: 300° C., dielectric constant: 3.40, dielectric loss tangent: 0.0022) and copper foil (electrolytic copper foil, thickness: 9 μm, surface roughness Rz: 2.0 μm) on both sides thereof, and a circuit was formed on the copper foil on one side by etching to prepare a wiring board 2 having a conductor circuit layer. In addition, the copper foil on one side of the copper-clad laminate 10 was removed by etching to prepare a copper-clad laminate 10'. The resin film 1 obtained in Example 13 was sandwiched between the surface of the conductor circuit layer side of the wiring board 2 and the surface of the insulating substrate layer side of the copper-clad laminate 10', and in the laminated state, the surfaces were thermocompressed at a temperature and pressure of 4.0 MPa for 120 minutes to prepare a multilayer circuit board 2.
[実施例50]
実施例41で得たカバーレイフィルム1’の接着剤組成物1側に離型PETフィルム(東山フィルム社製、商品名;HY-S05)が接するように積層して、真空ラミネーターを用いて温度160℃、圧力0.8MPa、2分間圧着した。その後、実施例13で得られた接着剤樹脂組成物1をカバーレイフィルム1’のポリイミドフィルム側に乾燥後の厚みが25μmになるように塗布して80℃で15分間乾燥を行った。さらに、乾燥した接着剤組成物1側に離型PETフィルム(東山フィルム社製、商品名;HY-S05)が接するように積層して、真空ラミネーターを用いて温度160℃、圧力0.8MPa、2分間圧着して、ポリイミドフィルムの両面に接着剤層を備えたポリイミド接着剤積層体1を調製した。
[Example 50]
A release PET film (manufactured by Higashiyama Film Co., Ltd., product name: HY-S05) was laminated on the adhesive composition 1 side of the coverlay film 1' obtained in Example 41 so as to be in contact with it, and a vacuum laminator was used to press the film at a temperature of 160 ° C. and a pressure of 0.8 MPa for 2 minutes. Thereafter, the adhesive resin composition 1 obtained in Example 13 was applied to the polyimide film side of the coverlay film 1' so as to have a thickness of 25 μm after drying, and dried at 80 ° C. for 15 minutes. Further, a release PET film (manufactured by Higashiyama Film Co., Ltd., product name: HY-S05) was laminated on the dried adhesive composition 1 side so as to be in contact with it, and a vacuum laminator was used to press the film at a temperature of 160 ° C. and a pressure of 0.8 MPa for 2 minutes, to prepare a polyimide adhesive laminate 1 having adhesive layers on both sides of the polyimide film.
以上、本発明の実施の形態を例示の目的で詳細に説明したが、本発明は上記実施の形態に制約されることはなく、種々の変形が可能である。 The above describes in detail the embodiment of the present invention for illustrative purposes, but the present invention is not limited to the above embodiment and various modifications are possible.
Claims (9)
前記ポリイミドが、テトラカルボン酸無水物成分と、ジアミン成分と、を反応させてなるものであり、前記ジアミン成分が全ジアミン成分に対し、ダイマー酸の二つの末端カルボン酸基が1級アミノメチル基又はアミノ基に置換されてなるダイマージアミンを主成分として98.2重量%以上含有するダイマージアミン組成物を40モル%以上含有し、
前記ダイマージアミン組成物に対するゲル浸透クロマトグラフィーを用いた測定によるクロマトグラムの面積パーセントで、下記成分(a)~(c);
(a)ダイマージアミン;
(b)炭素数10~40の範囲内にある一塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるモノアミン化合物;
(c)炭素数41~80の範囲内にある炭化水素基を有する多塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるアミン化合物(但し、前記ダイマージアミンを除く);
における前記成分(b)が0%であり、前記成分(c)が2%以下であるとともに、
前記成分(b)及び前記成分(c)の前記クロマトグラムの面積パーセントの比率(b/c)が1未満であり、
前記テトラカルボン酸無水物成分及び前記ジアミン成分のモル比(テトラカルボン酸無水物成分/ジアミン成分)が0.97以上1.008以下であり、
下記の構成I及びII:
I)下記の数式(i)、
E1=√ε1×Tanδ1 ・・・(i)
[ここで、ε1は、23℃、50%RHの恒温恒湿条件(常態)のもと24時間調湿後に、スプリットポスト誘電体共振器(SPDR)により測定される10GHzにおける誘電率を示し、Tanδ1は、23℃、50%RHの恒温恒湿条件のもと24時間調湿後に、SPDRにより測定される10GHzにおける誘電正接を示す]
に基づき算出される、23℃、50%RHの恒温恒湿条件のもと24時間調湿後の10GHzにおける誘電特性を示す指標であるE1値が0.010以下であること;
II)下記の数式(ii)、
E2=√ε2×Tanδ2 ・・・(ii)
[ここで、ε2は、23℃、24時間吸水後に、SPDRにより測定される10GHzにおける誘電率を示し、Tanδ2は、23℃、24時間吸水後に、SPDRによって測定される10GHzにおける誘電正接を示す]
に基づき算出される、23℃、24時間吸水後の10GHzにおける誘電特性を示す指標であるE2値において、
前記E1値に対するE2値の比(E2/E1)が3.0~1.0の範囲内であること;
を満たすことを特徴とする樹脂フィルム。 A resin film containing polyimide as a resin component,
the polyimide is obtained by reacting a tetracarboxylic anhydride component with a diamine component, and the diamine component contains 40 mol % or more of a dimer diamine composition containing 98.2 wt % or more of a dimer diamine composition as a main component, the dimer diamine being obtained by substituting two terminal carboxylic acid groups of a dimer acid with primary aminomethyl groups or amino groups, relative to the total diamine component;
The dimer diamine composition is measured by gel permeation chromatography, and the area percentage of the chromatogram is determined to be the following components (a) to (c):
(a) dimer diamine;
(b) a monoamine compound obtained by substituting a terminal carboxylic acid group of a monobasic acid compound having 10 to 40 carbon atoms with a primary aminomethyl group or an amino group;
(c) Amine compounds obtained by substituting the terminal carboxylic acid group of a polybasic acid compound having a hydrocarbon group having 41 to 80 carbon atoms with a primary aminomethyl group or an amino group (excluding the above-mentioned dimer diamine);
The content of the component (b) is 0% and the content of the component (c) is 2% or less,
the ratio (b/c) of the area percentages of the chromatograms of the component (b) and the component (c) is less than 1;
a molar ratio of the tetracarboxylic anhydride component to the diamine component (tetracarboxylic anhydride component/diamine component) is 0.97 or more and 1.008 or less,
Configurations I and II below:
I) Formula (i) below:
E 1 =√ε 1 ×Tanδ 1 ...(i)
[wherein ε 1 denotes the dielectric constant at 10 GHz measured by a split post dielectric resonator (SPDR) after 24 hours of conditioning under constant temperature and humidity conditions (normal state) of 23° C. and 50% RH, and Tan δ 1 denotes the dielectric loss tangent at 10 GHz measured by a SPDR after 24 hours of conditioning under constant temperature and humidity conditions of 23° C. and 50% RH]
The E1 value, which is an index showing the dielectric properties at 10 GHz after 24 hours of conditioning under constant temperature and humidity conditions of 23° C. and 50% RH, calculated based on the above formula, is 0.010 or less;
II) Formula (ii) below:
E 2 =√ε 2 ×Tan δ 2 ...(ii)
[where ε2 represents the dielectric constant at 10 GHz measured by SPDR after absorbing water at 23°C for 24 hours, and Tan δ2 represents the dielectric tangent at 10 GHz measured by SPDR after absorbing water at 23°C for 24 hours]
The E2 value is an index of dielectric properties at 10 GHz after absorbing water at 23°C for 24 hours, calculated based on the following:
the ratio of the E2 value to the E1 value ( E2 / E1 ) is within the range of 3.0 to 1.0;
A resin film characterized by satisfying the above.
前記接着剤層が、請求項1に記載の樹脂フィルムからなることを特徴とするカバーレイフィルム。 A coverlay film having an adhesive layer and a coverlay film material layer laminated thereon,
A coverlay film, wherein the adhesive layer is made of the resin film according to claim 1.
前記接着剤層が、請求項1に記載の樹脂フィルムからなることを特徴とする樹脂付銅箔。 A resin-coated copper foil having an adhesive layer and a copper foil laminated thereon,
2. A resin-coated copper foil, wherein the adhesive layer is made of the resin film according to claim 1.
前記接着剤層が、請求項1に記載の樹脂フィルムからなることを特徴とする金属張積層板。 A metal-clad laminate having an insulating resin layer, an adhesive layer laminated on at least one surface of the insulating resin layer, and a metal layer laminated on the insulating resin layer via the adhesive layer,
A metal-clad laminate, wherein the adhesive layer is made of the resin film according to claim 1.
前記複数の絶縁樹脂層のうちの少なくとも一層以上が、接着性を有するとともに前記導体回路層を被覆する接着剤層により形成されており、
前記接着剤層が、請求項1に記載の樹脂フィルムからなることを特徴とする多層回路基板。 A multilayer circuit board comprising a laminate including a plurality of laminated insulating resin layers, and one or more conductor circuit layers embedded in the laminate,
At least one of the plurality of insulating resin layers is formed of an adhesive layer having adhesiveness and covering the conductor circuit layer,
2. A multilayer circuit board, comprising the adhesive layer comprising the resin film according to claim 1.
前記ダイマージアミン組成物に対するゲル浸透クロマトグラフィーを用いた測定によるクロマトグラムの面積パーセントで、下記成分(a)~(c);
(a)ダイマージアミン;
(b)炭素数10~40の範囲内にある一塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるモノアミン化合物;
(c)炭素数41~80の範囲内にある炭化水素基を有する多塩基酸化合物の末端カルボン酸基を1級アミノメチル基又はアミノ基に置換して得られるアミン化合物(但し、前記ダイマージアミンを除く);
における前記成分(b)が0%であり、前記成分(c)が2%以下であるとともに、
前記成分(b)及び前記成分(c)の前記クロマトグラムの面積パーセントの比率(b/c)が1未満であり、
前記テトラカルボン酸無水物成分及び前記ジアミン成分のモル比(テトラカルボン酸無水物成分/ジアミン成分)が0.97以上1.008以下であることを特徴とするポリイミド。 A polyimide obtained by reacting a tetracarboxylic anhydride component with a diamine component, the diamine component containing 40 mol % or more of a dimer diamine composition containing 98.2 wt % or more of a dimer diamine composition as a main component, the dimer diamine being obtained by substituting two terminal carboxylic acid groups of a dimer acid with primary aminomethyl groups or amino groups, relative to the total diamine component;
The dimer diamine composition is measured by gel permeation chromatography, and the area percentage of the chromatogram is determined to be the following components (a) to (c):
(a) dimer diamine;
(b) a monoamine compound obtained by substituting a terminal carboxylic acid group of a monobasic acid compound having 10 to 40 carbon atoms with a primary aminomethyl group or an amino group;
(c) Amine compounds obtained by substituting the terminal carboxylic acid group of a polybasic acid compound having a hydrocarbon group having 41 to 80 carbon atoms with a primary aminomethyl group or an amino group (excluding the above-mentioned dimer diamine);
The content of the component (b) is 0% and the content of the component (c) is 2% or less,
the ratio (b/c) of the area percentages of the chromatograms of the component (b) and the component (c) is less than 1;
A polyimide characterized in that the molar ratio of the tetracarboxylic anhydride component to the diamine component (tetracarboxylic anhydride component/diamine component) is 0.97 or more and 1.008 or less.
(A)請求項8に記載のポリイミド、及び
(B)少なくとも2つの第1級アミノ基を官能基として有するアミノ化合物、
を含み、
前記(A)成分中のBTDAから誘導されるBTDA残基のケトン基1モルに対して、前記第1級のアミノ基が合計で0.004モルから1.5モルの範囲内になるように前記(B)成分を含有することを特徴とする接着剤樹脂組成物。 The following components (A) and (B):
(A) the polyimide according to claim 8; and (B) an amino compound having at least two primary amino groups as functional groups.
Including,
An adhesive resin composition comprising the component (B) such that the total amount of the primary amino groups is within the range of 0.004 mol to 1.5 mol per 1 mol of ketone groups of the BTDA residue derived from BTDA in the component (A).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018185877 | 2018-09-28 | ||
JP2018185877 | 2018-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020056011A JP2020056011A (en) | 2020-04-09 |
JP7630226B2 true JP7630226B2 (en) | 2025-02-17 |
Family
ID=70029603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019164507A Active JP7630226B2 (en) | 2018-09-28 | 2019-09-10 | Resin film, coverlay film, circuit board, resin-coated copper foil, metal-clad laminate, multi-layer circuit board, polyimide and adhesive resin composition |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7630226B2 (en) |
KR (1) | KR20200036766A (en) |
CN (2) | CN110964319B (en) |
TW (1) | TW202402887A (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111303424B (en) * | 2020-04-15 | 2022-10-21 | 江阴骏驰新材料科技有限公司 | Transparent high polymer material composition and application thereof |
JP7572234B2 (en) | 2020-12-23 | 2024-10-23 | 日鉄ケミカル&マテリアル株式会社 | Resin composition, resin film, metal-clad laminate, and printed wiring board |
JP7538712B2 (en) | 2020-12-23 | 2024-08-22 | 日鉄ケミカル&マテリアル株式会社 | Resin composition, resin film, metal-clad laminate, and printed wiring board |
TWI807216B (en) * | 2020-09-01 | 2023-07-01 | 佳勝科技股份有限公司 | Composite substrate and manufacturing method thereof |
JP2022058252A (en) * | 2020-09-30 | 2022-04-11 | 日鉄ケミカル&マテリアル株式会社 | Resin composition, resin film, laminate, coverlay film, copper foil with resin, metal-clad laminate and circuit board |
JP7636123B2 (en) | 2020-12-18 | 2025-02-26 | 信越化学工業株式会社 | Thermosetting maleimide resin composition |
JP2022099778A (en) * | 2020-12-23 | 2022-07-05 | 日鉄ケミカル&マテリアル株式会社 | Polyimide composition, resin film, laminate, cover lay film, copper foil with resin, metal-clad laminate, and circuit board |
JP7598756B2 (en) | 2020-12-24 | 2024-12-12 | 日鉄ケミカル&マテリアル株式会社 | Resin films, metal-clad laminates and circuit boards |
JP7642368B2 (en) | 2020-12-24 | 2025-03-10 | 日鉄ケミカル&マテリアル株式会社 | Polyimide, adhesive film, laminate, coverlay film, resin-coated copper foil, metal-clad laminate, circuit board and multi-layer circuit board |
JP7544086B2 (en) | 2021-02-26 | 2024-09-03 | 荒川化学工業株式会社 | Adhesive composition, cured product, adhesive sheet, resin-coated copper foil, copper-clad laminate, printed wiring board |
JP7467014B2 (en) | 2021-03-25 | 2024-04-15 | 信越化学工業株式会社 | Adhesive composition for flexible printed wiring boards (FPCs), and thermosetting resin films, prepregs, and FPC boards containing said composition |
JP7621161B2 (en) | 2021-03-31 | 2025-01-24 | 日鉄ケミカル&マテリアル株式会社 | Resin films, laminates, coverlay films, resin-coated copper foils, metal-clad laminates, circuit boards and multilayer circuit boards |
JP7156494B1 (en) | 2021-12-13 | 2022-10-19 | 東洋インキScホールディングス株式会社 | Thermosetting compositions, adhesive sheets, printed wiring boards and electronic devices |
CN116496623A (en) * | 2023-04-06 | 2023-07-28 | 瑞声科技(南京)有限公司 | Resin composition, polyimide preparation method and related products |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013001730A (en) | 2011-06-13 | 2013-01-07 | Nippon Steel & Sumikin Chemical Co Ltd | Crosslinked polyimide resin, adhesive resin composition and cured product thereof, cover lay film and circuit board |
JP2018140544A (en) | 2017-02-28 | 2018-09-13 | 新日鉄住金化学株式会社 | Metal-clad laminate, adhesive sheet, adhesive polyimide resin composition, and circuit board |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201215100D0 (en) * | 2012-08-24 | 2012-10-10 | Croda Int Plc | Polymide composition |
JP6635403B2 (en) | 2014-12-26 | 2020-01-22 | 荒川化学工業株式会社 | Copper foil with resin, copper-clad laminate, printed wiring board and multilayer wiring board |
EA201791891A1 (en) * | 2015-02-26 | 2018-01-31 | ДСМ АйПи АССЕТС Б.В. | DEVICE FOR HIGH-TEMPERATURE HEAT TRANSFER |
JP6593649B2 (en) * | 2015-03-31 | 2019-10-23 | 荒川化学工業株式会社 | Adhesive composition, adhesive film, adhesive layer, adhesive sheet, resin-coated copper foil, copper-clad laminate, flexible copper-clad laminate, printed wiring board, flexible printed wiring board, multilayer wiring board, printed circuit board, and Flexible printed circuit board |
JP6679957B2 (en) | 2016-02-01 | 2020-04-15 | 東洋インキScホールディングス株式会社 | Bonding agent and article bonded with the bonding agent |
JP6939017B2 (en) * | 2016-03-30 | 2021-09-22 | 荒川化学工業株式会社 | Polyimide, polyimide adhesive, film-like adhesive, adhesive layer, adhesive sheet, copper foil with resin, copper-clad laminate and printed wiring board, and multilayer wiring board and its manufacturing method |
-
2019
- 2019-09-10 JP JP2019164507A patent/JP7630226B2/en active Active
- 2019-09-25 KR KR1020190117880A patent/KR20200036766A/en active Pending
- 2019-09-26 CN CN201910917466.0A patent/CN110964319B/en active Active
- 2019-09-26 CN CN202311185339.9A patent/CN117210002A/en active Pending
- 2019-09-27 TW TW112137723A patent/TW202402887A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013001730A (en) | 2011-06-13 | 2013-01-07 | Nippon Steel & Sumikin Chemical Co Ltd | Crosslinked polyimide resin, adhesive resin composition and cured product thereof, cover lay film and circuit board |
JP2018140544A (en) | 2017-02-28 | 2018-09-13 | 新日鉄住金化学株式会社 | Metal-clad laminate, adhesive sheet, adhesive polyimide resin composition, and circuit board |
Also Published As
Publication number | Publication date |
---|---|
JP2020056011A (en) | 2020-04-09 |
CN110964319B (en) | 2023-10-10 |
KR20200036766A (en) | 2020-04-07 |
CN110964319A (en) | 2020-04-07 |
CN117210002A (en) | 2023-12-12 |
TW202012501A (en) | 2020-04-01 |
TW202402887A (en) | 2024-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7630226B2 (en) | Resin film, coverlay film, circuit board, resin-coated copper foil, metal-clad laminate, multi-layer circuit board, polyimide and adhesive resin composition | |
JP7301495B2 (en) | Metal-clad laminates and circuit boards | |
KR102694527B1 (en) | Metal-clad laminate and circuit board | |
JP7509560B2 (en) | Resin films, metal-clad laminates and circuit boards | |
JP2021070824A (en) | Polyimide composition, resin film, laminate, cover ray film, copper foil with resin, metal-clad laminate and circuit board | |
CN114656874B (en) | Polyimide composition, resin film, laminate, cover film, copper foil with resin, metal-clad laminate, and circuit board | |
TWI865703B (en) | Metal-clad laminates and circuit boards | |
JP2021161387A (en) | Polyimide, crosslinked polyimide, adhesive film, laminate, coverlay film, copper foil with resin, metal-clad laminate, circuit board and multilayer circuit board | |
JP2020072197A (en) | Circuit board and multilayer circuit board | |
JP7621161B2 (en) | Resin films, laminates, coverlay films, resin-coated copper foils, metal-clad laminates, circuit boards and multilayer circuit boards | |
JP7578408B2 (en) | Polyimide, polyimide composition, adhesive film, laminate, coverlay film, resin-coated copper foil, metal-clad laminate, circuit board, and multilayer circuit board | |
JP2022158993A (en) | Bond ply, circuit board and strip line using the same | |
JP2022150087A (en) | Polyimides, cross-linked polyimides, adhesive films, laminates, coverlay films, resin-coated copper foils, metal-clad laminates, circuit boards and multilayer circuit boards | |
JP7636149B2 (en) | Polyimide, polyimide solution, polyimide film, adhesive film, laminate, coverlay film, resin-coated copper foil, metal-clad laminate, circuit board, and multi-layer circuit board | |
TWI875715B (en) | Resin film, cover film, circuit board, copper foil with resin, metal-clad laminate, multi-layer circuit board, polyimide and adhesive resin composition | |
JP7642368B2 (en) | Polyimide, adhesive film, laminate, coverlay film, resin-coated copper foil, metal-clad laminate, circuit board and multi-layer circuit board | |
JP7598756B2 (en) | Resin films, metal-clad laminates and circuit boards | |
JP2021105146A (en) | Resin composition and resin film | |
JP2021147610A (en) | Polyimide, crosslinked polyimide, adhesive film, laminate, coverlay film, copper foil with resin, metal-clad laminate, circuit board and multilayer circuit board | |
JP2023035477A (en) | Thermoplastic polyimide, crosslinked polyimide, adhesive film, laminate, cover lay film, copper foil with resin, metal-clad laminate, circuit board and multilayer circuit board | |
JP2024141762A (en) | Resin composition, resin film, laminate, coverlay film, resin-coated copper foil, metal-clad laminate, and circuit board | |
JP2024141761A (en) | Resin composition, resin film, laminate, coverlay film, resin-coated copper foil, metal-clad laminate, and circuit board | |
JP2023097185A (en) | Polyimide composition, cross-linked polyimide, adhesive film, laminate, cover lay film, copper foil with resin, metal-clad laminate sheet, circuit board and multilayer circuit board | |
JP2022155041A (en) | Flexible metal-clad laminates and flexible circuit boards | |
JP2023096204A (en) | Polyimide composition, resin film, laminate, cover lay film, copper foil with resin, metal-clad laminate and circuit board |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220804 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230804 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230905 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20231010 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240408 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20240723 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241017 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20241025 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250121 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7630226 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |