JP7601400B2 - Composite copper components treated with silane coupling agents - Google Patents
Composite copper components treated with silane coupling agents Download PDFInfo
- Publication number
- JP7601400B2 JP7601400B2 JP2021567457A JP2021567457A JP7601400B2 JP 7601400 B2 JP7601400 B2 JP 7601400B2 JP 2021567457 A JP2021567457 A JP 2021567457A JP 2021567457 A JP2021567457 A JP 2021567457A JP 7601400 B2 JP7601400 B2 JP 7601400B2
- Authority
- JP
- Japan
- Prior art keywords
- silane coupling
- coupling agent
- layer
- copper member
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 187
- 239000006087 Silane Coupling Agent Substances 0.000 title claims description 108
- 239000010949 copper Substances 0.000 title claims description 98
- 229910052802 copper Inorganic materials 0.000 title claims description 96
- 239000002131 composite material Substances 0.000 title claims description 57
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 144
- 239000011889 copper foil Substances 0.000 claims description 88
- 229910052759 nickel Inorganic materials 0.000 claims description 72
- 238000011282 treatment Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 48
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 42
- 239000005751 Copper oxide Substances 0.000 claims description 42
- 229910000431 copper oxide Inorganic materials 0.000 claims description 42
- -1 amino, methacryl Chemical group 0.000 claims description 34
- 229920005989 resin Polymers 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 28
- 238000007254 oxidation reaction Methods 0.000 claims description 25
- 230000003647 oxidation Effects 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 238000009713 electroplating Methods 0.000 claims description 14
- 238000004438 BET method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229920002554 vinyl polymer Polymers 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011149 active material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- 229910009257 Y—Si Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 88
- 230000000052 comparative effect Effects 0.000 description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 238000007747 plating Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- 239000007822 coupling agent Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 150000004032 porphyrins Chemical class 0.000 description 6
- 235000011121 sodium hydroxide Nutrition 0.000 description 6
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 4
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052743 krypton Inorganic materials 0.000 description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007773 negative electrode material Substances 0.000 description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 235000011118 potassium hydroxide Nutrition 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 2
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000002388 carbon-based active material Substances 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 2
- DCCWEYXHEXDZQW-BYPYZUCNSA-N (2s)-2-[bis(carboxymethyl)amino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)N(CC(O)=O)CC(O)=O DCCWEYXHEXDZQW-BYPYZUCNSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical compound NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-UHFFFAOYSA-N 2-[2-(1,2-dicarboxyethylamino)ethylamino]butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NCCNC(C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- BZOVBIIWPDQIHF-UHFFFAOYSA-N 3-hydroxy-2-methylbenzenesulfonic acid Chemical compound CC1=C(O)C=CC=C1S(O)(=O)=O BZOVBIIWPDQIHF-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- ZTVCAEHRNBOTLI-UHFFFAOYSA-L Glycine, N-(carboxymethyl)-N-(2-hydroxyethyl)-, disodium salt Chemical compound [Na+].[Na+].OCCN(CC([O-])=O)CC([O-])=O ZTVCAEHRNBOTLI-UHFFFAOYSA-L 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004153 Potassium bromate Substances 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MLDWGLQSBBCMMO-UHFFFAOYSA-N [Na].[Na].[Na].CNCC(=O)O Chemical compound [Na].[Na].[Na].CNCC(=O)O MLDWGLQSBBCMMO-UHFFFAOYSA-N 0.000 description 1
- KXJLGCBCRCSXQF-UHFFFAOYSA-N [diacetyloxy(ethyl)silyl] acetate Chemical compound CC(=O)O[Si](CC)(OC(C)=O)OC(C)=O KXJLGCBCRCSXQF-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229950003476 aminothiazole Drugs 0.000 description 1
- DAPUDVOJPZKTSI-UHFFFAOYSA-L ammonium nickel sulfate Chemical compound [NH4+].[NH4+].[Ni+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DAPUDVOJPZKTSI-UHFFFAOYSA-L 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- JEZFASCUIZYYEV-UHFFFAOYSA-N chloro(triethoxy)silane Chemical compound CCO[Si](Cl)(OCC)OCC JEZFASCUIZYYEV-UHFFFAOYSA-N 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- WPUMTJGUQUYPIV-JIZZDEOASA-L disodium (S)-malate Chemical compound [Na+].[Na+].[O-]C(=O)[C@@H](O)CC([O-])=O WPUMTJGUQUYPIV-JIZZDEOASA-L 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- ZPBSAMLXSQCSOX-UHFFFAOYSA-N naphthalene-1,3,6-trisulfonic acid Chemical compound OS(=O)(=O)C1=CC(S(O)(=O)=O)=CC2=CC(S(=O)(=O)O)=CC=C21 ZPBSAMLXSQCSOX-UHFFFAOYSA-N 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- UQPSGBZICXWIAG-UHFFFAOYSA-L nickel(2+);dibromide;trihydrate Chemical compound O.O.O.Br[Ni]Br UQPSGBZICXWIAG-UHFFFAOYSA-L 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920003050 poly-cycloolefin Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 229940094037 potassium bromate Drugs 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- WFIZEGIEIOHZCP-UHFFFAOYSA-M potassium formate Chemical compound [K+].[O-]C=O WFIZEGIEIOHZCP-UHFFFAOYSA-M 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 229940074439 potassium sodium tartrate Drugs 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 229940116357 potassium thiocyanate Drugs 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 235000019265 sodium DL-malate Nutrition 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 239000001394 sodium malate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- BUUPQKDIAURBJP-UHFFFAOYSA-N sulfinic acid Chemical compound OS=O BUUPQKDIAURBJP-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- DRKXDZADBRTYAT-DLCHEQPYSA-J tetrasodium (2S)-2-[bis(carboxymethyl)amino]pentanedioate Chemical compound C(=O)(O)CN([C@@H](CCC(=O)[O-])C(=O)[O-])CC(=O)O.[Na+].[Na+].[Na+].[Na+].C(=O)(O)CN([C@@H](CCC(=O)[O-])C(=O)[O-])CC(=O)O DRKXDZADBRTYAT-DLCHEQPYSA-J 0.000 description 1
- DTXLBRAVKYTGFE-UHFFFAOYSA-J tetrasodium;2-(1,2-dicarboxylatoethylamino)-3-hydroxybutanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)C(O)C(C([O-])=O)NC(C([O-])=O)CC([O-])=O DTXLBRAVKYTGFE-UHFFFAOYSA-J 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical compound CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- ASTWEMOBIXQPPV-UHFFFAOYSA-K trisodium;phosphate;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].[Na+].[O-]P([O-])([O-])=O ASTWEMOBIXQPPV-UHFFFAOYSA-K 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
- C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
- C23C22/52—Treatment of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/60—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH greater than 8
- C23C22/63—Treatment of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/36—Pretreatment of metallic surfaces to be electroplated of iron or steel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1393—Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/665—Composites
- H01M4/667—Composites in the form of layers, e.g. coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/385—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2222/00—Aspects relating to chemical surface treatment of metallic material by reaction of the surface with a reactive medium
- C23C2222/20—Use of solutions containing silanes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Laminated Bodies (AREA)
Description
本発明はシランカップリング剤で処理された複合銅部材に関する。 The present invention relates to a composite copper component treated with a silane coupling agent.
プリント配線板に使用される銅箔は、樹脂基材との密着性が要求される。この密着性を向上させるため、エッチングなどで銅箔の表面を粗面化処理し、いわゆるアンカー効果による機械的接着力を上げる方法が用いられてきた。一方、プリント配線板の高密度化や高周波帯域での伝送損失の観点から、銅箔表面の平坦化が要求されるようになってきた。それらの相反する要求を満たすため、酸化工程と還元工程を行うなどの銅表面処理方法が開発されている(国際公開2014/126193号公報)。この方法では、銅箔をプリコンディショニングし、酸化剤を含有する薬液に浸漬することで銅箔表面を酸化させて酸化銅の凹凸を形成した後、還元剤を含有する薬液に浸漬し、酸化銅を還元することで、表面の凹凸を調整して表面の粗さを整える。その他にも、酸化・還元を利用した銅箔の処理における密着性の改善方法として、酸化工程において表面活性分子を添加する方法(特表2013-534054号公報)や、還元工程の後にアミノチアゾール系化合物等を用いて銅箔の表面に保護皮膜を形成する方法(特開平8-97559号公報)が開発されている。Copper foil used in printed wiring boards is required to have good adhesion to the resin substrate. In order to improve this adhesion, a method has been used in which the surface of the copper foil is roughened by etching or the like, thereby increasing the mechanical adhesive strength by the so-called anchor effect. On the other hand, from the viewpoint of increasing the density of printed wiring boards and transmission loss in the high frequency band, flattening of the copper foil surface has become necessary. In order to meet these conflicting requirements, a copper surface treatment method has been developed that performs an oxidation process and a reduction process (WO 2014/126193). In this method, the copper foil is preconditioned, immersed in a chemical solution containing an oxidizing agent to oxidize the copper foil surface and form copper oxide irregularities, and then immersed in a chemical solution containing a reducing agent to reduce the copper oxide, thereby adjusting the surface irregularities and adjusting the surface roughness. Other methods for improving adhesion in copper foil treatment using oxidation/reduction include a method of adding surface active molecules in the oxidation step (JP Patent Publication No. 2013-534054) and a method of forming a protective film on the surface of copper foil using an aminothiazole-based compound or the like after the reduction step (JP Patent Publication No. 8-97559).
さらに、銅箔と絶縁性樹脂基材の密着性を増すため、化学的接着力を増すためのシランカップリング剤処理なども行われていた。
シランカップリング剤は、以下の化学構造式:
X-Si(OR)3
(X:ビニル基、エポキシ基、アミノ基、メタクリル基、メルカプト基などの反応性有機官能基であり、樹脂基材中の有機樹脂と化学結合する;
-ORはメトキシ基、エトキシ基、ジアルコキシ基、トリアルコキシ基などのアルコキシ基であり、加水分解して、シラノール基(SiOH)を生成し、銅箔などの無機材と結合する)
で表される。
Furthermore, in order to increase the adhesion between the copper foil and the insulating resin substrate, a silane coupling agent treatment was also used to increase the chemical adhesive strength.
Silane coupling agents have the following chemical structure:
X-Si(OR) 3
(X: a reactive organic functional group such as a vinyl group, an epoxy group, an amino group, a methacryl group, or a mercapto group, which chemically bonds with the organic resin in the resin substrate;
-OR is an alkoxy group such as a methoxy group, an ethoxy group, a dialkoxy group, or a trialkoxy group, which hydrolyzes to generate a silanol group (SiOH) and bond to inorganic materials such as copper foil.
It is expressed as:
粗面化処理された銅箔の場合、その粗面化の仕方により最適なシランカップリング剤の量が違うことが知られている。
特許文献4には、シランカップリング剤は0.15~20.0mg/m2(Si換算)で付着していることが好ましく、0.15mg/m2未満の場合には、基材樹脂と表面処置銅箔との密着性を向上させることができない旨、記載されている。しかしながら、特許文献5には、シランカップリング剤は0.03~3.00mg/m2(Si換算)で付着していることが好ましいことが記載され、特許文献6には、粗化処理面に存在するシランカップリング剤の量がSi換算で0.05mg/m2以上1.5mg/m2未満であることが好ましいと記載されている。
シランカップリング剤の最適付着量は付着する表面の粗さだけでなく、銅箔表面に積層された金属の種類にも依存する。たとえば、国際公開2006/134868号公報には、スズめっき層とシランカップリング剤層の定着効率が優れている旨記載され、スズめっき層の上にシランカップリング剤を付着させているのに対して、特許6248231号公報では、銅粒子の電析により粗化処理を行った面(すなわち純銅)、又はその上にニッケル、亜鉛、クロムなどを電解めっきした面にシランカップリング剤を付着させており、国際公開2017/099094号公報では、モリブデン粒子の電析により粗化処理を行った面に、ニッケルめっきを施した後、シランカップリング剤処理を行っている。
In the case of a copper foil that has been roughened, it is known that the optimum amount of silane coupling agent varies depending on the method of roughening.
Patent Document 4 describes that the silane coupling agent is preferably attached at 0.15 to 20.0 mg/m 2 (Si equivalent), and that if it is less than 0.15 mg/m 2 , it is not possible to improve the adhesion between the base resin and the surface-treated copper foil. However, Patent Document 5 describes that the silane coupling agent is preferably attached at 0.03 to 3.00 mg/m 2 (Si equivalent), and Patent Document 6 describes that the amount of silane coupling agent present on the roughened surface is preferably 0.05 mg/m 2 or more and less than 1.5 mg/m 2 in Si equivalent.
The optimum amount of silane coupling agent depends not only on the roughness of the surface to which it is applied, but also on the type of metal laminated on the copper foil surface.For example, WO 2006/134868 describes that the adhesion efficiency of the tin plating layer and the silane coupling agent layer is excellent, and the silane coupling agent is applied on the tin plating layer, whereas in Japanese Patent 6248231, the silane coupling agent is applied to a surface (i.e. pure copper) that has been roughened by electrolytic deposition of copper particles, or a surface that has been electrolytically plated with nickel, zinc, chromium, etc., on the surface, and in WO 2017/099094, the surface that has been roughened by electrolytic deposition of molybdenum particles is nickel-plated, and then treated with the silane coupling agent.
本願発明者らも、酸化処理した銅箔に電解めっきによりニッケルをめっきした、複合銅箔を開発していたが、その表面粗さも組成も、従来の銅箔とは異なっており、最適なシランカップリング剤の付着量は不明であった(国際公開2019/093494号公報)。The inventors of the present application had also developed a composite copper foil in which an oxidation-treated copper foil was plated with nickel by electrolytic plating, but the surface roughness and composition of the composite copper foil were different from those of conventional copper foils, and the optimal amount of silane coupling agent to be applied was unknown (WO 2019/093494).
本発明は、シランカップリング剤で処理された複合銅箔を提供する。 The present invention provides a composite copper foil treated with a silane coupling agent.
本願発明者らは鋭意研究の結果、酸化処理により針状の銅酸化物を析出させ、粗面化した銅部材に、電解めっきを行いその粗面化した表面にニッケルの層を形成し、ニッケル層が形成された面をシランカップリング剤でコートすることより、樹脂基材に対して、機械的接着力だけでなく化学的接着力のすぐれた複合銅部材を作製することに成功した。As a result of extensive research, the inventors of the present application have succeeded in producing a composite copper component that has excellent mechanical and chemical adhesion to a resin substrate by precipitating needle-shaped copper oxide through an oxidation process, then electrolytically plating the roughened copper component to form a nickel layer on the roughened surface, and coating the surface with the nickel layer with a silane coupling agent.
本発明は以下の態様を含む:
[1] 銅部材の少なくとも一部の表面に針状の銅酸化物を含む層を有し、前記銅酸化物を含む層の上にニッケルの層を有し、さらに前記ニッケル層が形成された表面上にシランカップリング剤層を有する複合銅部材であって、前記シランカップリング剤層の付着量が7μg/dm2以上900μg/dm2以下(銅部材単位面積あたりのSi換算重量)である複合銅部材。
[2] 前記シランカップリング剤層が形成された表面のBET表面積比(BET法により算出された、シランカップリング剤層が形成された表面の表面積/シランカップリング剤層が形成された銅部材の平面視野面積)が、3以上20以下である、[1]に記載の複合銅部材。
[3] 前記ニッケル層の厚みが0.5mg/dm2以上25mg/dm2以下(銅部材単位面積あたりのニッケル重量)である、[1]又は[2]に記載の複合銅部材。
[4] 前記シランカップリング剤層が形成された表面のRaが0.02μm以上0.17μm以下である、[1]~[3]のいずれか一項に記載の複合銅部材。
[5] 前記シランカップリング剤層が形成された表面のRzが0.2μm以上1.5μm以下である、[1]~[4]のいずれか一項に記載の複合銅部材。
[6] 前記シランカップリング剤層が形成された表面の、BET表面積比/Rzの値が4μm-1以上である、[1]~[5]のいずれか一項に記載の複合銅部材。
[7] 前記シランカップリング剤が、以下の式:
Y―Si(OR)3
(Yは
ビニル基、エポキシ基、アミノ基、メタクリル基、メルカプト基、3-メルカプトプロピル基、3-アミノプロピル基、3-メルカプトプロピル基、2-(3,4-エポキシシクロヘキシル)エチル基、3-メタクリロキシプロピル基、3-イソシアネートプロピル基、3-ウレイドプロピル基及び3-アクリロキシプロピル基からなる群から選択され;
-ORはアルコキシ基である)で表される化合物を含む、[1]~[6]のいずれか一項に記載の複合銅部材。
[8] [1]~[7]のいずれか一項に記載の複合銅部材の、前記シランカップリング剤層の上に、樹脂基材が積層された積層体。
[9] [8]に記載の積層体を含む、プリント配線板。
[10] 前記銅部材が銅箔である、[1]~[7]のいずれか一項に記載の複合銅部材。
[11] [10]に記載の複合銅部材を含む、負極集電体。
The present invention includes the following aspects:
[1] A composite copper member having a layer containing needle-shaped copper oxide on at least a part of the surface of a copper member, a nickel layer on the copper oxide layer, and a silane coupling agent layer on the surface on which the nickel layer is formed, wherein the adhesion amount of the silane coupling agent layer is 7 μg/dm2 or more and 900 μg/dm2 or less (Si converted weight per unit area of the copper member).
[2] The BET surface area ratio of the surface on which the silane coupling agent layer is formed (surface area of the surface on which the silane coupling agent layer is formed / plan view area of the copper member on which the silane coupling agent layer is formed, calculated by the BET method) is 3 or more and 20 or less. The composite copper member according to [1].
[3] The composite copper member according to [1] or [2], wherein the nickel layer has a thickness of 0.5 mg/ dm2 or more and 25 mg/dm2 or less (nickel weight per unit area of the copper member).
[4] The composite copper member according to any one of [1] to [3], wherein the surface on which the silane coupling agent layer is formed has an Ra of 0.02 μm or more and 0.17 μm or less.
[5] The composite copper member according to any one of [1] to [4], wherein the Rz of the surface on which the silane coupling agent layer is formed is 0.2 μm or more and 1.5 μm or less.
[6] The composite copper member according to any one of [1] to [5], wherein the surface on which the silane coupling agent layer is formed has a BET surface area ratio/Rz value of 4 μm −1 or more.
[7] The silane coupling agent is represented by the following formula:
Y-Si(OR) 3
(Y is selected from the group consisting of vinyl, epoxy, amino, methacryl, mercapto, 3-mercaptopropyl, 3-aminopropyl, 3-mercaptopropyl, 2-(3,4-epoxycyclohexyl)ethyl, 3-methacryloxypropyl, 3-isocyanatopropyl, 3-ureidopropyl, and 3-acryloxypropyl groups;
The composite copper member according to any one of [1] to [6], comprising a compound represented by the formula (I)-OR is an alkoxy group.
[8] A laminate in which a resin base material is laminated on the silane coupling agent layer of the composite copper member according to any one of [1] to [7].
[9] A printed wiring board comprising the laminate according to [8].
[10] The composite copper member according to any one of [1] to [7], wherein the copper member is a copper foil.
[11] A negative electrode current collector comprising the composite copper member according to [10].
[12] シランカップリング剤で処理された複合銅部材の製造方法であって、
酸化処理により、銅部材の少なくとも一部の表面に、厚さが平均400nm以下で、微細凹凸形状を有する銅酸化物層を形成する第一の工程と、
前記銅酸化物層の上に、電解めっき処理によりニッケル層を形成する第二の工程と、
前記ニッケル層が形成された表面に、7μg/dm2以上900μg/dm2以下(銅部材単位面積あたりのSi換算重量)のシランカップリング剤をコートする第三の工程を含む、
製造方法。
[13] 第一の工程後の前記銅酸化物層が形成された表面のRaが0.035以上0.15以下である、[12]に記載の製造方法。
[14] 第一の工程後の前記銅酸化物層が形成された表面のRzが0.25以上1.45以下である、[12]又は[13]に記載の製造方法。
[15] 第二の工程における電解めっき処理の電流密度が5A/dm2以下であることを特徴とする[12]~[14]のいずれか一項に記載の製造方法。
[16] 前記ニッケル層の厚みが0.5mg/dm2以上25mg/dm2以下(銅部材単位面積あたりのニッケル重量)である、[12]~[15]のいずれか一項に記載の製造方法。
[17] 前記シランカップリング剤が、以下の式:
X―Si(OR)3
(Xは
ビニル基、エポキシ基、アミノ基、メタクリル基、メルカプト基、3-メルカプトプロピル基、3-アミノプロピル基、3-メルカプトプロピル基、2-(3,4-エポキシシクロヘキシル)エチル基、ビニル基、3-メタクリロキシプロピル基、3-イソシアネートプロピル基、3-ウレイドプロピル基及び3-アクリロキシプロピル基からなる群から選択され;
-ORはアルコキシ基である)で表される化合物を含む、[12]~[16]のいずれか一項に記載の製造方法。
[18] 第三の工程後のシランカップリング剤がコートされた表面のRaが0.02μm以上0.17μm以下である、[12]~[17]のいずれか一項に記載の製造方法。
[19] 第三の工程後のシランカップリング剤がコートされた表面のRzが0.2μm以上1.5μm以下である、[12]~[18]のいずれか一項に記載の製造方法。
[20] 第三の工程後のシランカップリング剤がコートされた表面のBET表面積比が、3以上20以下である、[12]~[19]のいずれか一項に記載の製造方法。
[21] 第三の工程後のシランカップリング剤がコートされた表面の、BET表面積比/Rzの値が4μm-1以上である、[12]~[20]のいずれか一項に記載の製造方法。
[22] [12]~[21]のいずれか一項に記載の製造方法で作製されたシランカップリング剤で処理された銅部材に、樹脂基材を熱圧着する工程を含む、積層体の製造方法。
[23] 前記銅部材が銅箔である、[12]~[21]のいずれか一項に記載の製造方法。
[24] [23]に記載の製造方法で作製されたシランカップリング剤で処理された複合銅部材に、導電性活物質を塗布し担持させる工程を含む、二次電池の製造方法。
==関連文献とのクロスリファレンス==
本出願は、2019年12月26日付で出願した日本国特許出願2019-236800に基づく優先権を主張するものであり、当該基礎出願を引用することにより、本明細書に含めるものとする。
[12] A method for producing a composite copper part treated with a silane coupling agent, comprising the steps of:
a first step of forming a copper oxide layer having an average thickness of 400 nm or less and a fine uneven shape on at least a part of a surface of a copper member by oxidation treatment;
a second step of forming a nickel layer on the copper oxide layer by electrolytic plating;
A third step of coating the surface on which the nickel layer is formed with a silane coupling agent in an amount of 7 μg/dm 2 or more and 900 μg/dm 2 or less (weight in terms of Si per unit area of the copper member),
Manufacturing method.
[13] The manufacturing method according to [12], wherein the surface on which the copper oxide layer is formed after the first step has an Ra of 0.035 or more and 0.15 or less.
[14] The method according to [12] or [13], wherein the Rz of the surface on which the copper oxide layer is formed after the first step is 0.25 or more and 1.45 or less.
[15] The manufacturing method according to any one of [12] to [14], wherein the current density of the electrolytic plating treatment in the second step is 5 A/ dm2 or less.
[16] The manufacturing method according to any one of [12] to [15], wherein the thickness of the nickel layer is 0.5 mg/dm2 or more and 25 mg/dm2 or less (nickel weight per unit area of the copper member).
[17] The silane coupling agent is represented by the following formula:
X-Si(OR) 3
(X is selected from the group consisting of vinyl, epoxy, amino, methacryl, mercapto, 3-mercaptopropyl, 3-aminopropyl, 3-mercaptopropyl, 2-(3,4-epoxycyclohexyl)ethyl, vinyl, 3-methacryloxypropyl, 3-isocyanatopropyl, 3-ureidopropyl, and 3-acryloxypropyl groups;
The method according to any one of [12] to [16], comprising a compound represented by the formula (I) (-OR is an alkoxy group).
[18] The method according to any one of [12] to [17], wherein the Ra of the surface coated with the silane coupling agent after the third step is 0.02 μm or more and 0.17 μm or less.
[19] The method according to any one of [12] to [18], wherein the Rz of the surface coated with the silane coupling agent after the third step is 0.2 μm or more and 1.5 μm or less.
[20] The method according to any one of [12] to [19], wherein the BET surface area ratio of the surface coated with the silane coupling agent after the third step is 3 or more and 20 or less.
[21] The method according to any one of [12] to [20], wherein the BET surface area ratio/Rz value of the surface coated with the silane coupling agent after the third step is 4 μm −1 or more.
[22] A method for producing a laminate, comprising a step of thermocompression bonding a resin substrate to a copper member treated with a silane coupling agent produced by the method for producing a laminate according to any one of [12] to [21].
[23] The method according to any one of [12] to [21], wherein the copper member is a copper foil.
[24] A method for producing a secondary battery, comprising a step of coating and supporting a conductive active material on a composite copper member treated with a silane coupling agent produced by the method for producing a secondary battery according to [23].
==Cross references to related literature==
This application claims priority based on Japanese Patent Application No. 2019-236800, filed on December 26, 2019, the basic application of which is incorporated herein by reference.
以下、本発明の好ましい実施の形態につき、添付図面を用いて詳細に説明するが、必ずしもこれに限定するわけではない。なお、本発明の目的、特徴、利点、及びそのアイデアは、本明細書の記載により、当業者には明らかであり、本明細書の記載から、当業者であれば、容易に本発明を再現できる。以下に記載された発明の実施の形態及び具体的な実施例などは、本発明の好ましい実施態様を示すものであり、例示又は説明のために示されているのであって、本発明をそれらに限定するものではない。本明細書で開示されている本発明の意図並びに範囲内で、本明細書の記載に基づき、様々な改変並びに修飾ができることは、当業者にとって明らかである。 The preferred embodiment of the present invention will be described in detail below with reference to the attached drawings, but is not necessarily limited thereto. The objectives, features, advantages, and ideas of the present invention will be clear to those skilled in the art from the description in this specification, and those skilled in the art will be able to easily reproduce the present invention from the description in this specification. The embodiments and specific examples of the invention described below show preferred embodiments of the present invention, and are shown for illustrative or explanatory purposes, and do not limit the present invention thereto. It will be clear to those skilled in the art that various modifications and alterations can be made based on the description in this specification within the intent and scope of the present invention disclosed in this specification.
==シランカップリング剤で処理された複合銅部材の製造方法==
本発明の一実施態様は、シランカップリング剤で処理された複合銅部材の製造方法であって、酸化処理により、銅箔表面に針状の銅酸化物を析出させ、微細凹凸形状を有する銅酸化物層を形成する第一の工程と、銅酸化物層の上に、電解めっき処理によりニッケル層を形成する第二の工程と、ニッケル層が形成された表面に、シランカップリング剤をコートする第三の工程を含む製造方法である。
銅部材とは、構造の一部となる、Cuを主成分として含む材料のことであり、電解銅箔や圧延銅箔およびキャリア付き銅箔等の銅箔、銅線、銅板、銅製リードフレーム、銅粉などが含まれるがこれらに限定されない。電解めっきできるものが好ましい。
銅箔には、銅を主成分とした、電解銅箔、圧延銅箔、キャリア付きの銅箔等の銅箔が含まれ、その厚みは0.1μm以上100μm以下である。特に、0.5μm以上50μm以下が好ましい。
銅板は、銅が主成分であり、その厚みが100μm超で板状のものを指す。特に、限定しないが、1mm以上、2mm以上又は10mm以上が好ましく、10cm以下、5cm以下又は2.5cm以下が好ましい。
銅部材は、Cu純度が、95質量%以上、99質量%以上、又は99.9質量%以上の純銅からなる銅箔が好ましく、タフピッチ銅、脱酸銅、無酸素銅で形成されていることがより好ましく、含有酸素量が0.001質量%~0.0005質量%の無酸素銅で形成されていることがさらに好ましい。
==Method for manufacturing composite copper member treated with silane coupling agent==
One embodiment of the present invention is a method for producing a composite copper member treated with a silane coupling agent, the method comprising a first step of precipitating needle-like copper oxide on a copper foil surface by oxidation treatment to form a copper oxide layer having a fine uneven shape, a second step of forming a nickel layer on the copper oxide layer by electrolytic plating treatment, and a third step of coating the surface on which the nickel layer has been formed with a silane coupling agent.
The copper member is a material that contains Cu as a main component and is a part of the structure, and includes, but is not limited to, copper foil such as electrolytic copper foil, rolled copper foil, and copper foil with a carrier, copper wire, copper plate, copper lead frame, copper powder, etc. Those that can be electroplated are preferable.
The copper foil includes copper foils containing copper as a main component, such as electrolytic copper foils, rolled copper foils, and copper foils with carriers, and has a thickness of 0.1 μm to 100 μm, and more preferably 0.5 μm to 50 μm.
The copper plate refers to a plate-like material whose main component is copper and whose thickness exceeds 100 μm. Although not particularly limited, the thickness is preferably 1 mm or more, 2 mm or more, or 10 mm or more, and is preferably 10 cm or less, 5 cm or less, or 2.5 cm or less.
The copper member is preferably a copper foil made of pure copper having a Cu purity of 95% by mass or more, 99% by mass or more, or 99.9% by mass or more, more preferably made of tough pitch copper, deoxidized copper, or oxygen-free copper, and even more preferably made of oxygen-free copper having an oxygen content of 0.001% by mass to 0.0005% by mass.
第一の工程において、銅箔を酸化処理することにより、針状の銅酸化物を析出させ、微細凹凸形状を有する銅酸化物層を形成する。形成方法は特に限定されないが、酸化剤を用いて形成してもよく、加熱処理や陽極酸化によって形成してもよい。この酸化工程以前に、エッチングなどの粗面化処理工程は必要ないが、行ってもよい。脱脂洗浄または酸化工程への酸の持ち込みを防止するためのアルカリ処理は行ってもよい。アルカリ処理の方法は特に限定されないが、好ましくは0.1~10g/L、より好ましくは1~2g/Lのアルカリ水溶液、例えば水酸化ナトリウム水溶液で、30~50℃、0.5~2分間程度処理すればよい。In the first step, the copper foil is oxidized to precipitate needle-shaped copper oxide, forming a copper oxide layer with a fine uneven shape. The method of formation is not particularly limited, but it may be formed using an oxidizing agent, or may be formed by heat treatment or anodization. A roughening treatment step such as etching is not necessary before this oxidation step, but may be performed. An alkali treatment may be performed to prevent the introduction of acid into the degreasing and cleaning step or the oxidation step. The method of alkali treatment is not particularly limited, but it is preferable to treat with an alkali aqueous solution of 0.1 to 10 g/L, more preferably 1 to 2 g/L, such as a sodium hydroxide aqueous solution, at 30 to 50°C for about 0.5 to 2 minutes.
酸化剤は特に限定されず、例えば、次亜塩素酸塩(たとえば、ナトリウム塩やカリウム塩)、亜塩素酸塩、塩素酸塩、過塩素酸塩等を含むアルカリ性の水溶液を用いることができる。酸化剤には、各種添加剤(たとえば、リン酸三ナトリウム十二水和物のようなリン酸塩)や表面活性分子を添加して銅酸化物の析出を調整してもよい。
表面活性分子としては、ポルフィリン、ポルフィリン大員環、拡張ポルフィリン、環縮小ポルフィリン、直鎖ポルフィリンポリマー、ポルフィリンサンドイッチ配位錯体、ポルフィリン配列、シラン、テトラオルガノ‐シラン、アミノエチル‐アミノプロピル‐トリメトキシシラン、3‐アミノプロピル)トリメトキシシラン、1‐[3‐(トリメトキシシリル)プロピル]ウレア、(3‐アミノプロピル)トリエトキシシラン、(3‐グリシジルオキシプロピル)トリメトキシシラン、(3‐クロロプロピル)トリメトキシシラン、(3‐グリシジルオキシプロピル)トリメトキシシラン、ジメチルジクロロシラン、3‐(トリメトキシシリル)プロピルメタクリレート、エチルトリアセトキシシラン、トリエトキシ(イソブチル)シラン、トリエトキシ(オクチル)シラン、トリス(2‐メトキシエトキシ)(ビニル)シラン、クロロトリメチルシラン、メチルトリクロロシラン、四塩化ケイ素、テトラエトキシシラン、フェニルトリメトキシシラン、クロロトリエトキシシラン、エチレン‐トリメトキシシラン、アミン、糖などを例示できる。
酸化処理液の一例として、亜塩素酸ナトリウムを30g/L以上~250g/L以下含み、水酸化カリウムを8g/L以上~40g/L以下含み、3-グリシジルオキシプロピルトリメトキシシランを0.5g/L以上~2g/L以下含む水溶液を用いることができる。
The oxidizing agent is not particularly limited, and for example, an alkaline aqueous solution containing hypochlorite (e.g., sodium salt or potassium salt), chlorite, chlorate, perchlorate, etc. Various additives (e.g., phosphates such as trisodium phosphate dodecahydrate) and surface active molecules may be added to the oxidizing agent to adjust the precipitation of copper oxide.
Surface active molecules include porphyrins, porphyrin macrocycles, expanded porphyrins, ring-contracted porphyrins, linear porphyrin polymers, porphyrin sandwich coordination complexes, porphyrin arrays, silanes, tetraorgano-silanes, aminoethyl-aminopropyl-trimethoxysilane, 3-aminopropyl)trimethoxysilane, 1-[3-(trimethoxysilyl)propyl]urea, (3-aminopropyl)triethoxysilane, (3-glycidyloxypropyl)trimethoxysilane, (3-chloropropyl)trimethoxysilane, and 1-[3-(trimethoxysilyl)propyl]urea. Examples include silane, (3-glycidyloxypropyl)trimethoxysilane, dimethyldichlorosilane, 3-(trimethoxysilyl)propyl methacrylate, ethyltriacetoxysilane, triethoxy(isobutyl)silane, triethoxy(octyl)silane, tris(2-methoxyethoxy)(vinyl)silane, chlorotrimethylsilane, methyltrichlorosilane, silicon tetrachloride, tetraethoxysilane, phenyltrimethoxysilane, chlorotriethoxysilane, ethylenetrimethoxysilane, amines, and sugars.
As an example of the oxidation treatment liquid, an aqueous solution containing 30 g/L or more and 250 g/L or less of sodium chlorite, 8 g/L or more and 40 g/L or less of potassium hydroxide, and 0.5 g/L or more and 2 g/L or less of 3-glycidyloxypropyltrimethoxysilane can be used.
酸化反応条件は特に限定されないが、酸化剤の液温は40~95℃であることが好ましく、45~80℃であることがより好ましい。反応時間は0.5~30分であることが好ましく、1~10分であることがより好ましい。The oxidation reaction conditions are not particularly limited, but the liquid temperature of the oxidizing agent is preferably 40 to 95°C, and more preferably 45 to 80°C. The reaction time is preferably 0.5 to 30 minutes, and more preferably 1 to 10 minutes.
第一の工程において、酸化処理によって形成された酸化物層を溶解剤で溶解して、酸化物層表面の凹凸部を調整してもよい。In the first step, the oxide layer formed by the oxidation treatment may be dissolved with a solvent to adjust the unevenness of the oxide layer surface.
本工程で用いる溶解剤は特に限定されないが、キレート剤、特に生分解性キレート剤であることが好ましく、エチレンジアミン四酢酸、ジエタノールグリシン、L-グルタミン酸二酢酸・四ナトリウム、エチレンジアミン-N,N’-ジコハク酸、3-ヒドロキシ-2、2’-イミノジコハク酸ナトリウム、メチルグリシン2酢酸3ナトリウム、アスパラギン酸ジ酢酸4ナトリウム、N-(2-ヒドロキシエチル)イミノ二酢酸ジナトリウム、グルコン酸ナトリウムなどが例示できる。The dissolving agent used in this process is not particularly limited, but is preferably a chelating agent, particularly a biodegradable chelating agent, and examples thereof include ethylenediaminetetraacetic acid, diethanolglycine, tetrasodium L-glutamic acid diacetate, ethylenediamine-N,N'-disuccinic acid, sodium 3-hydroxy-2,2'-iminodisuccinate, trisodium methylglycine diacetate, tetrasodium aspartic acid diacetate, disodium N-(2-hydroxyethyl)iminodiacetate, and sodium gluconate.
溶解剤のpHは特に限定されないが、アルカリ性であることが好ましく、pH8~10.5であることがより好ましく、pH9.0~10.5であることがさらに好ましく、pH9.8~10.2であることがさらに好ましい。The pH of the dissolving agent is not particularly limited, but it is preferable that it is alkaline, more preferably pH 8 to 10.5, even more preferably pH 9.0 to 10.5, and even more preferably pH 9.8 to 10.2.
また、第1の工程において、銅部材に形成された酸化銅層を、還元剤を含有する薬液(還元用薬液)を用いて還元し、凸部の数や高さを調整してもよい。In addition, in the first step, the copper oxide layer formed on the copper member may be reduced using a chemical solution containing a reducing agent (reducing chemical solution) to adjust the number and height of the protrusions.
還元剤としては、DMAB(ジメチルアミンボラン)、ジボラン、水素化ホウ素ナトリウム、ヒドラジン等を用いることができる。また、還元用薬液は、還元剤、アルカリ性化合物(水酸化ナトリウム、水酸化カリウム等)、及び溶媒(純水等)を含む液体である。 The reducing agent may be DMAB (dimethylamine borane), diborane, sodium borohydride, hydrazine, etc. The reducing solution is a liquid containing a reducing agent, an alkaline compound (sodium hydroxide, potassium hydroxide, etc.), and a solvent (pure water, etc.).
第一工程において、銅酸化物層の厚さを平均400nm以下にする。好ましくは平均200nm以下にし、より好ましくは平均160nm以下、或いは平均90nm以下にする。さらに銅酸化物層の厚さは、好ましくは平均20nm以上にし、より好ましくは平均30nm以上にし、さらに好ましくは平均40nm以上にする。なお、銅酸化物層の厚さが400nm以下である領域の割合は特に限定されないが、50%以上が400nm以下であることが好ましく、70%以上が400nm以下であることがより好ましく、90%以上が400nm以下であることがさらに好ましく、95%以上が400nm以下であることがさらに好ましく、ほぼ100%が400nm以下であることがさらに好ましい。
銅酸化物層の厚さの割合は、例えば、10×10cmの面積中の10測定点における連続電気化学還元法(SERA)により算出することができる。
In the first step, the thickness of the copper oxide layer is set to 400 nm or less on average. Preferably, the thickness is set to 200 nm or less on average, more preferably, 160 nm or less on average, or 90 nm or less on average. Furthermore, the thickness of the copper oxide layer is preferably set to 20 nm or more on average, more preferably, 30 nm or more on average, and even more preferably, 40 nm or more on average. The ratio of the area where the thickness of the copper oxide layer is 400 nm or less is not particularly limited, but it is preferable that 50% or more is 400 nm or less, more preferably, 70% or more is 400 nm or less, even more preferably, 90% or more is 400 nm or less, even more preferably, 95% or more is 400 nm or less, and even more preferably, almost 100% is 400 nm or less.
The thickness ratio of the copper oxide layer can be calculated, for example, by a continuous electrochemical reduction assay (SERA) at 10 measurement points in an area of 10×10 cm.
銅酸化物層の算術平均粗さ(Ra)は0.035μm以上が好ましく、0.038μm以上がより好ましく、また、0.20μm以下であることが好ましく、0.060μm以下であることがより好ましい。
銅酸化物層の最大高さ粗さ(Rz)は0.2μm以上が好ましく、0.25μm以上がより好ましく、また、1.45μm以下であることが好ましく、0.50μm以下であることがより好ましい。
算術平均粗さ(Ra)とは基準長さlにおいて、以下の式で表される輪郭曲線(y=Z(x))におけるZ(x)(すなわち山の高さと谷の深さ)の絶対値の平均を表す。
表面粗さRa、RzはJIS B 0601:2001(国際基準ISO4287-1997準拠)に定められた方法により算出できる。
The arithmetic mean roughness (Ra) of the copper oxide layer is preferably 0.035 μm or more, more preferably 0.038 μm or more, and is preferably 0.20 μm or less, more preferably 0.060 μm or less.
The maximum height roughness (Rz) of the copper oxide layer is preferably 0.2 μm or more, more preferably 0.25 μm or more, and is preferably 1.45 μm or less, more preferably 0.50 μm or less.
The arithmetic mean roughness (Ra) is the average of the absolute values of Z(x) (i.e., the height of the peaks and the depth of the valleys) in the profile curve (y = Z(x)) expressed by the following formula over a reference length l.
The surface roughness Ra and Rz can be calculated by the method defined in JIS B 0601:2001 (based on the international standard ISO 4287-1997).
第二の工程において、第一の工程で形成された銅酸化物層に対し、電解めっき処理をし、ニッケル層を形成する。ニッケル層は電解めっきにより形成される。ニッケル層におけるニッケルの含有率は、90%重量%以上、95%重量%以上、98%重量%以上、99%重量%以上、又は99.9%重量%以上が好ましい。
電解めっきで形成されるニッケル層の平均の厚みは、ニッケル層が形成される銅箔の単位面積(片面めっきの場合は銅箔の平面視面積、両面めっきの場合は銅箔の平面視面積×2)あたりのニッケルの重量として表した場合、0.5mg/dm2、1.0mg/dm2、1.5mg/dm2、2.0mg/dm2、3.0mg/dm2、4.0mg/dm2、5.0mg/dm2、6.0mg/dm2、又は7.0mg/dm2以上であることが好ましく、25.0mg/dm2、20.0mg/dm2、15.0mg/dm2、10.0mg/dm2、9.0mg/dm2、又は9.0mg/dm2以下であること好ましい。
銅箔の平面視面積は、所定の範囲においてその範囲の表面がフラットであるとした場合の表面積と等しく、展開面積比(sdr)(ISO25178)」における定義領域に対応する。
ニッケル層の平均の厚みは、ニッケル層を形成するニッケルを、酸性溶液で溶解し、ICP分析によってニッケルの量を測定し、その測定量を、ニッケル層が形成された銅箔の単位面積で除して算出できる。あるいは、ニッケル層を有する銅箔そのものを溶解し、ニッケル層を形成するニッケルの量のみを検出測定することにより、算出できる。
In the second step, the copper oxide layer formed in the first step is subjected to electrolytic plating to form a nickel layer. The nickel layer is formed by electrolytic plating. The nickel content in the nickel layer is preferably 90% by weight or more, 95% by weight or more, 98% by weight or more, 99% by weight or more, or 99.9% by weight or more.
The average thickness of the nickel layer formed by electrolytic plating, expressed as the weight of nickel per unit area of the copper foil on which the nickel layer is formed (the area in plan view of the copper foil in the case of single-sided plating, and twice the area in plan view of the copper foil in the case of double-sided plating), is preferably 0.5 mg/ dm2 , 1.0 mg/ dm2 , 1.5 mg/ dm2 , 2.0 mg/ dm2 , 3.0 mg/ dm2 , 4.0 mg / dm2 , 5.0 mg/ dm2 , 6.0 mg/dm2, or 7.0 mg/ dm2 or more, and preferably 25.0 mg/ dm2 , 20.0 mg/ dm2 , 15.0 mg/ dm2 , 10.0 mg/ dm2 , 9.0 mg/ dm2 , or 9.0 mg/ dm2 or less.
The plan view area of a copper foil is equal to the surface area of a given area when the surface of that area is flat, and corresponds to the defined area in the "developed area ratio (sdr) (ISO 25178)."
The average thickness of the nickel layer can be calculated by dissolving the nickel forming the nickel layer in an acidic solution, measuring the amount of nickel by ICP analysis, and dividing the measured amount by the unit area of the copper foil on which the nickel layer is formed. Alternatively, the copper foil having the nickel layer itself can be dissolved, and only the amount of nickel forming the nickel layer can be detected and measured to calculate the average thickness of the nickel layer.
電解めっきは、酸化物層の酸化物を一部還元するのにも電荷が必要であるため、ニッケルめっきを銅箔に施す場合、その厚さを好ましい範囲に収めるためには電解めっき処理する銅箔の面積あたり、15C/dm2以上~90C/dm2以下の電荷を与えることが好ましい。
また、電流密度は5A/dm2以下が好ましい。電流密度が高すぎると、凸部にめっきが集中するなど、均一めっきが困難である。なお、銅酸化物層の酸化物を一部還元するまでと、めっきを被覆中の電流を変えてもよい。また、被覆する金属により所定の厚さになるよう適宜調整する。
めっきイオンの供給剤として、例えば、硫酸ニッケル、スルファミン酸ニッケル、塩化ニッケル、臭化ニッケルなどが用いることができる。
pH緩衝剤や光沢剤などを含むその他添加剤として、例えば、ほう酸、酢酸ニッケル、クエン酸、クエン酸ナトリウム、クエン酸アンモニウム、ギ酸カリウム、リンゴ酸、リンゴ酸ナトリウム、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、塩化アンモニウム、シアン化ナトリウム、酒石酸カリウムナトリウム、チオシアン酸カリウム、硫酸、塩酸、塩化カリウム、硫酸アンモニウム、塩化アンモニウム、硫酸カリウム、硫酸ナトリウム、チオシアンナトリウム、チオ硫酸ナトリウム、臭酸カリウム、ピロリン酸カリウム、エチレンジアミン、硫酸ニッケルアンモニウム、チオ硫酸ナトリウム、ケイフッ酸、ケイフッ化ナトリウム、硫酸ストロンチウム、クレゾールスルホン酸、β-ナフトール、サッカリン、1,3,6-ナフタレントリスルホン酸、ナフタレン(ジ、トリ)、スルホン酸ナトリウム、スルホンアミド、スルフィン酸などが使用される。
ニッケルめっきにおいて、その浴組成は、例えば、硫酸ニッケル(100g/L以上~350g/L以下)、スルファミン酸ニッケル(100g/L以上~600g/L以下)、塩化ニッケル(0g/L以上~300g/L以下)及びこれらの混合物を含むものが好ましいが、添加剤としてクエン酸ナトリウム(0g/L以上~100g/L以下)やホウ酸(0g/L以上~60g/L以下)が含まれていてもよい。
In electrolytic plating, an electric charge is required even to partially reduce the oxide in the oxide layer. Therefore, when nickel plating is applied to copper foil, in order to keep the thickness within a preferred range, it is preferable to apply an electric charge of 15 C/dm2 or more and 90 C/dm2 or less per area of the copper foil to be electrolytically plated.
The current density is preferably 5 A/ dm2 or less. If the current density is too high, plating may concentrate on the convex parts, making uniform plating difficult. The current may be changed until the oxide of the copper oxide layer is partially reduced and during plating. The current is appropriately adjusted to a predetermined thickness depending on the metal to be coated.
As a supplying agent for plating ions, for example, nickel sulfate, nickel sulfamate, nickel chloride, nickel bromide, etc. can be used.
Examples of other additives that may be used include pH buffers and gloss agents, such as boric acid, nickel acetate, citric acid, sodium citrate, ammonium citrate, potassium formate, malic acid, sodium malate, sodium hydroxide, potassium hydroxide, sodium carbonate, ammonium chloride, sodium cyanide, potassium sodium tartrate, potassium thiocyanate, sulfuric acid, hydrochloric acid, potassium chloride, ammonium sulfate, ammonium chloride, potassium sulfate, sodium sulfate, sodium thiocyanate, sodium thiosulfate, potassium bromate, potassium pyrophosphate, ethylenediamine, nickel ammonium sulfate, sodium thiosulfate, hydrofluoric acid, sodium silicofluoride, strontium sulfate, cresol sulfonic acid, β-naphthol, saccharin, 1,3,6-naphthalene trisulfonic acid, naphthalene (di, tri), sodium sulfonate, sulfonamide, and sulfinic acid.
In nickel plating, the bath composition preferably contains, for example, nickel sulfate (100 g/L or more and 350 g/L or less), nickel sulfamate (100 g/L or more and 600 g/L or less), nickel chloride (0 g/L or more and 300 g/L or less), or a mixture thereof, but may also contain additives such as sodium citrate (0 g/L or more and 100 g/L or less) or boric acid (0 g/L or more and 60 g/L or less).
第三の工程として、電解めっき処理後の表面に、シランカップリング剤処理を行う。用いるシランカップリング剤としては、加水分解性基が2又は3のものが好ましく、加水分解性基として、メトキシ基又はエトキシ基のものが好ましい。
特に限定しないが、3-メルカプトプロピルトリメトキシシラン、3-アミノプロピルトリメトキシシラン、3-メルカプトプロピルトリメトキシシラン、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン、ビニルトリメトキシシラン、3-メタクリロキシプロピルトリメトキシシラン、3-イソシアネートプロピルトリエトキシシラン、3-ウレイドプロピルトリアルコキシシラン、3-アクリロキシプロピルトリメトキシシランなどを用いることが出来る。
シランカップリン剤処理はシランカップリング剤を水又は有機溶媒に分散させた溶液を、塗布又は吹き付け、吸着させることにより行うことができる。シランカップリング剤を水又は有機溶媒に分散させた溶液は特に限定しないが、重量%で0.5%、1%、2%、3%、4%、5%、6%、7%、8%又は9%以上が好ましく、20%、15%又は10%以下が好ましい。
吸着後、乾燥させることによりシランカップリン剤処理は完了する。乾燥させる温度と時間は、溶媒である水又は有機溶媒が完全に蒸発すれば特に限定しないが、70度で1分以上乾燥させるのが好ましく、100度で1分以上乾燥させるのがさらに好ましく、110度で1分以上乾燥させることがより好ましい。
In the third step, the surface after the electrolytic plating is treated with a silane coupling agent. The silane coupling agent used is preferably one having 2 or 3 hydrolyzable groups, and the hydrolyzable groups are preferably methoxy or ethoxy groups.
Although there are no particular limitations, 3-mercaptopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, vinyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-ureidopropyltrialkoxysilane, 3-acryloxypropyltrimethoxysilane, and the like can be used.
The silane coupling agent treatment can be carried out by applying or spraying a solution in which the silane coupling agent is dispersed in water or an organic solvent, and allowing it to be adsorbed. The solution in which the silane coupling agent is dispersed in water or an organic solvent is not particularly limited, but is preferably 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, or 9% or more by weight, and preferably 20%, 15%, or 10% or less by weight.
After the adsorption, the silane coupling agent treatment is completed by drying. The temperature and time for drying are not particularly limited as long as the water or organic solvent as the solvent is completely evaporated, but drying at 70° C. for 1 minute or more is preferable, drying at 100° C. for 1 minute or more is more preferable, and drying at 110° C. for 1 minute or more is even more preferable.
カップリング剤処理後のカップリング剤層の形成された表面の算術平均粗さ(Ra)は0.01μm、0.02μm、0.03μm又は0.04μm以上が好ましく、0.20μm、0.15μm、0.10μm又は0.060μm以下であることがより好ましい。
カップリング剤処理後のカップリング剤層の形成された表面の最大高さ粗さ(Rz)は0.2μm、0.3μm又は0.4μm以上が好ましく、1,5μm、1.4μm、1.3μm、1.2μm、1.1μm、1.0μm、0.50μm、0.40μm又は0.30μm以下であることが好ましい。
また、酸化処理後のRaとカップリング剤処理後のRaの比(酸化処理後のRa/カップリング剤処理後のRa)である表される表面粗さの変化は0.7以上~1.3以下が好ましく、酸化処理後のRzとカップリング剤処理後のRzの比(酸化処理後のRz/カップリング剤処理後のRz)は0.8以上~1.2以下が好ましい。カップリング剤層は極めて薄いため、この比の値が1に近いほど、電解めっきで形成されたニッケル層の厚さの均一性と一様性を示している。
The arithmetic mean roughness (Ra) of the surface on which the coupling agent layer is formed after the coupling agent treatment is preferably 0.01 μm, 0.02 μm, 0.03 μm or 0.04 μm or more, and more preferably 0.20 μm, 0.15 μm, 0.10 μm or 0.060 μm or less.
The maximum height roughness (Rz) of the surface on which the coupling agent layer is formed after the coupling agent treatment is preferably 0.2 μm, 0.3 μm or 0.4 μm or more, and is preferably 1.5 μm, 1.4 μm, 1.3 μm, 1.2 μm, 1.1 μm, 1.0 μm, 0.50 μm, 0.40 μm or 0.30 μm or less.
In addition, the change in surface roughness, which is expressed as the ratio of Ra after oxidation treatment to Ra after coupling agent treatment (Ra after oxidation treatment/Ra after coupling agent treatment), is preferably 0.7 to 1.3, and the ratio of Rz after oxidation treatment to Rz after coupling agent treatment (Rz after oxidation treatment/Rz after coupling agent treatment) is preferably 0.8 to 1.2. Since the coupling agent layer is extremely thin, the closer this ratio is to 1, the more uniform and even the thickness of the nickel layer formed by electrolytic plating is.
第一から第三の工程を行うことにより、銅箔の少なくとも一部の表面に針状の銅酸化物を含む層を有し、前記銅酸化物を含む層の上にニッケル層が積層され、さらに前記ニッケル層が積層された表面にシランカップリング剤層を有する複合銅箔が製造できる。By carrying out the first to third steps, a composite copper foil can be produced that has a layer containing needle-shaped copper oxide on at least a portion of the surface of the copper foil, a nickel layer laminated on the layer containing copper oxide, and a silane coupling agent layer on the surface on which the nickel layer is laminated.
==シランカップリング剤層を有する複合銅部材==
本発明の一実施態様は、銅部材の少なくとも一部の表面に針状の銅酸化物を含む層を有し、前記銅酸化物を含む層の上にニッケル層が積層され、さらに前記ニッケル層が積層された表面にシランカップリング剤層を有する複合銅部材である。
==Composite copper member having silane coupling agent layer==
One embodiment of the present invention is a composite copper member having a layer containing needle-shaped copper oxide on at least a portion of the surface of a copper member, a nickel layer laminated on the layer containing copper oxide, and a silane coupling agent layer on the surface on which the nickel layer is laminated.
シランカップリング剤層の付着量は、シランカップリング剤層が形成された表面の、銅箔の単位面積(片面処理の場合は銅箔の平面視面積、両面処理の場合は銅箔の平面視面積×2)あたりのSi原子の重量として表した場合、5μg/dm2、6μg/dm2、7μg/dm2、8μg/dm2、9μg/dm2、10μg/dm2、15μg/dm2、20μg/dm2、30μg/dm2、40μg/dm2、50μg/dm2又は60μg/dm2以上であることが好ましく、900μg/dm2、700μg/dm2、500μg/dm2、400μg/dm2、300μg/dm2、200g/dm2、100μg/dm2、70μg/dm2、60μg/dm2、又は50μg/dm2以下であること好ましい。
シランカップリング剤層の付着量は、その表面にシランカップリング剤層が形成されたニッケル層ごと、酸性溶液で溶解し、ICP分析によってSi原子の量を測定し、その測定量を銅箔の単位面積で除して算出できる。あるいは、シランカップリング剤層を有する複合銅箔そのものを溶解し、シランカップリング剤層を形成するSi原子の量のみを検出測定することにより、算出できる。
The amount of the silane coupling agent layer, expressed as the weight of Si atoms per unit area of the copper foil (planar area of the copper foil in the case of single-sided treatment, planar area of the copper foil x 2 in the case of double-sided treatment) on the surface on which the silane coupling agent layer is formed, is preferably 5 μg/dm 2 , 6 μg/dm 2 , 7 μg/dm 2 , 8 μg/dm 2 , 9 μg/dm 2 , 10 μg/dm 2 , 15 μg/dm 2 , 20 μg/dm 2 , 30 μg/dm 2 , 40 μg/dm 2 , 50 μg/dm 2 or 60 μg/dm 2 or more, and more preferably 900 μg/dm 2 , 700 μg/dm 2 , 500 μg/dm 2 , 400 μg/dm 2 , 300 μg/dm 2 . , 200 g/dm 2 , 100 μg/dm 2 , 70 μg/dm 2 , 60 μg/dm 2 , or 50 μg/dm 2 or less.
The amount of the silane coupling agent layer can be calculated by dissolving the nickel layer with the silane coupling agent layer formed on its surface in an acidic solution, measuring the amount of Si atoms by ICP analysis, and dividing the measured amount by the unit area of the copper foil. Alternatively, the composite copper foil with the silane coupling agent layer itself can be dissolved, and only the amount of Si atoms forming the silane coupling agent layer can be detected and measured to calculate the amount of the silane coupling agent layer.
表面積の算出方法は、BET法が好ましいが、これに限定したものではなく、例えば、3次元画像解析などの画像処理によって算出することも可能である。銅箔の2次元観察画像を連続的に観察し、それらの観察画像を3次元に再構築する。観察には、走査型電子顕微鏡(SEM)、透過型電子顕微鏡(TEM)、コンフォーカル顕微鏡などを用いてよい。SEMを用いる場合には、FIB(集束イオンビーム)を用いて加工し、加工した全銅箔の断面観察を行い、観察画像を集積する。TEMを用いる場合には、連続的に傾斜させた銅箔に電子線を照射し、各角度における連続傾斜像(質量密度分布の2次元投影像)を取り込む。連続傾斜像の位置合わせ後、フーリエ変換、逆フーリエ変換することにより3次元画像を構築する。The surface area is preferably calculated by the BET method, but is not limited to this method. For example, the surface area can be calculated by image processing such as three-dimensional image analysis. Two-dimensional observation images of the copper foil are continuously observed, and the observation images are reconstructed in three dimensions. For observation, a scanning electron microscope (SEM), a transmission electron microscope (TEM), a confocal microscope, etc. may be used. When using an SEM, processing is performed using a FIB (focused ion beam), cross-sectional observation of the entire processed copper foil is performed, and the observation images are accumulated. When using a TEM, an electron beam is irradiated onto the continuously tilted copper foil, and successive tilt images (two-dimensional projection images of the mass density distribution) at each angle are captured. After aligning the successive tilt images, a three-dimensional image is constructed by Fourier transform and inverse Fourier transform.
BET比表面積とは、窒素(N2)、アルゴン(Ar)、クリプトン(Kr)、一酸化炭素(CO)などの気体分子を固体粒子に吸着させ、吸着した気体分子の量から固体粒子の比表面積を測定する気体吸着法(BET法)により算出される固体粒子質量あたりの表面積の総和を指す。
BET比表面積の測定方法としては、クリプトンガス吸着BET多点法や窒素吸着1点法などが挙げられる。特に微細な表面積を測定する際はクリプトンガスが飽和蒸気圧の関係で好ましい。
複合銅箔の全表面積は、(BET比表面積)×(用いた銅箔の質量)で算出することができる。
The BET specific surface area refers to the sum of the surface areas per mass of solid particles calculated by the gas adsorption method (BET method), in which gas molecules such as nitrogen ( N2 ), argon (Ar), krypton (Kr), and carbon monoxide (CO) are adsorbed onto solid particles and the specific surface area of the solid particles is measured from the amount of adsorbed gas molecules.
The method for measuring the BET specific surface area includes the multi-point krypton gas adsorption BET method, the single-point nitrogen adsorption method, etc. In particular, when measuring a fine surface area, krypton gas is preferred in terms of the saturated vapor pressure.
The total surface area of the composite copper foil can be calculated by (BET specific surface area) x (mass of copper foil used).
BET表面積比は、(BET法により算出された、シランカップリング剤層が形成された表面の表面積)/(シランカップリング剤層が形成された銅箔の平面視野面積)で表すことができる。
本発明に用いる銅箔においては、銅箔側面部分の表面積は無視できるので、BET表面積比は、
(1)両面処理した銅箔の場合
(2)片面処理した銅箔の場合
で算出することができる。
The BET surface area ratio can be expressed as (the surface area of the surface on which the silane coupling agent layer is formed, calculated by the BET method)/(the plan view area of the copper foil on which the silane coupling agent layer is formed).
In the copper foil used in the present invention, the surface area of the copper foil side portion can be ignored, so the BET surface area ratio is
(1) In the case of copper foil treated on both sides
(2) In the case of copper foil treated on one side
It can be calculated as follows.
銅板などのように厚みが100μm以上の場合は、側面部分の表面積が無視できない。
厚みが100μm以上の際のBET表面積比は、
(1)両面処理した銅板の場合
(2)片面処理した銅板の場合
で算出することができる。
シランカップリング剤層が形成された表面のBET表面積比は、3以上、4以上、5以上、6以上、7以上、8以上、9以上又は10以上が好ましく、20以下、15以下、14以下、13以下、12以下又は11以下が好ましい。
In the case of a plate having a thickness of 100 μm or more, such as a copper plate, the surface area of the side surface cannot be ignored.
The BET surface area ratio when the thickness is 100 μm or more is
(1) In the case of copper plates treated on both sides
(2) In the case of copper sheets treated on one side
It can be calculated as follows.
The BET surface area ratio of the surface on which the silane coupling agent layer is formed is preferably 3 or more, 4 or more, 5 or more, 6 or more, 7 or more, 8 or more, 9 or more, or 10 or more, and is preferably 20 or less, 15 or less, 14 or less, 13 or less, 12 or less, or 11 or less.
シランカップリング剤層が形成された表面の、BET表面積比/Rzの値は、4μm-1以上、5μm-1以上、10μm-1以上、15μm-1以上又は20μm-1以上が好ましく、35μm-1以下、30μm-1以下又は25μm-1以下が好ましい。 The BET surface area ratio/Rz value of the surface on which the silane coupling agent layer is formed is preferably 4 μm −1 or more, 5 μm −1 or more, 10 μm −1 or more, 15 μm −1 or more, or 20 μm −1 or more, and is preferably 35 μm −1 or less, 30 μm −1 or less, or 25 μm −1 or less.
==シランカップリング剤層を有する複合銅部材の利用方法==
本発明に係るシランカップリング剤で処理された複合銅部材は、プリント配線板に使用される銅箔やLIB負極集電体用の銅箔などとして用いることができる。
例えば、本発明に係るシランカップリング剤で処理された複合銅箔を樹脂基材と層状に接着させることによって積層板を作製し、プリント配線板を製造するのに用いることができる。樹脂基材に含まれる樹脂の種類は特に限定されないが、熱可塑性樹脂であっても、熱硬化性樹脂であってもよく、ポリフェニレンエーテル(PPE)、エポキシ、ポリフェニレンオキシド(PPO)、ポリベンゾオキサゾール(PBO)、ポリテトラフルオロエチレン(PTFE)、液晶ポリマー(LCP)、トリフェニルフォサイト(TPPI)、フッ素樹脂、ポリエーテルイミド、ポリエーテルエーテルケトン、ポリシクロオレフィン、ビスマレイミド樹脂、低誘電率ポリイミド、シアネート樹脂、或いはこれらの混合樹脂であることが好ましい。樹脂基材はさらに無機フィラーやガラス繊維を含んでいてもよい。
また、例えば本発明に係るシランカップリング剤で処理された複合銅箔を用いて負極集電体を作製すると、銅箔と負極材料の密着性が向上し、容量劣化の小さい良好なリチウムイオン電池を得ることができる。リチウムイオン電池用の負極集電体は公知の方法に従って製造することができる。例えば、カーボン系活物質を含有する負極材料を調製し、溶剤もしくは水に分散させて活物質スラリーとする。この活物質スラリーを本発明に係るシランカップリング剤で処理された複合銅箔に塗布した後、溶剤や水を蒸発させるため乾燥させる。その後、プレスし、再度乾燥した後に所望の形になるよう負極集電体を成形する。なお、負極材料には、カーボン系活物質よりも理論容量の大きいシリコンやシリコン化合物、ゲルマニウム、スズ、鉛などを含んでもよい。また、電解質として有機溶媒にリチウム塩を溶解させた有機電解液だけでなく、ポリエチレンオキシドやポリフッ化ビニリデンなどからなるポリマーを用いたものであってもよい。本発明に係るシランカップリング剤で処理された複合銅箔は、リチウムイオン電池だけでなく、リチウムイオンポリマー電池にも適用できる。
==Method of using a composite copper member having a silane coupling agent layer==
The composite copper member treated with the silane coupling agent according to the present invention can be used as a copper foil for use in a printed wiring board or a copper foil for a LIB negative electrode current collector.
For example, the composite copper foil treated with the silane coupling agent according to the present invention can be bonded in layers with a resin substrate to produce a laminate, which can be used to manufacture a printed wiring board. The type of resin contained in the resin substrate is not particularly limited, but may be a thermoplastic resin or a thermosetting resin, and is preferably polyphenylene ether (PPE), epoxy, polyphenylene oxide (PPO), polybenzoxazole (PBO), polytetrafluoroethylene (PTFE), liquid crystal polymer (LCP), triphenylphossite (TPPI), fluororesin, polyetherimide, polyetheretherketone, polycycloolefin, bismaleimide resin, low dielectric constant polyimide, cyanate resin, or a mixture of these resins. The resin substrate may further contain an inorganic filler or glass fiber.
In addition, for example, when a negative electrode current collector is produced using a composite copper foil treated with the silane coupling agent according to the present invention, the adhesion between the copper foil and the negative electrode material is improved, and a good lithium ion battery with little capacity deterioration can be obtained. The negative electrode current collector for lithium ion batteries can be produced according to a known method. For example, a negative electrode material containing a carbon-based active material is prepared and dispersed in a solvent or water to form an active material slurry. This active material slurry is applied to a composite copper foil treated with the silane coupling agent according to the present invention, and then dried to evaporate the solvent and water. Thereafter, the composite copper foil is pressed and dried again, and then the negative electrode current collector is formed into a desired shape. The negative electrode material may contain silicon or a silicon compound, germanium, tin, lead, etc., which have a larger theoretical capacity than the carbon-based active material. In addition, not only an organic electrolyte solution in which a lithium salt is dissolved in an organic solvent as an electrolyte, but also a polymer made of polyethylene oxide or polyvinylidene fluoride may be used. The composite copper foil treated with the silane coupling agent according to the present invention can be applied not only to lithium ion batteries but also to lithium ion polymer batteries.
<1.複合銅箔の製造>
実施例1~27並びに比較例1~9は、銅箔としてDR-WS(古河電工株式会社製、厚さ:18μm)を用いた。比較例10として、すでに片面のみ粗化処理され、めっきが施されたFV-WS(古河電工株式会社製、厚さ:18μm)を用いた。実施例16は、DR-WSのシャイニー面(光沢面。反対面と比較したときに平坦である面。)のみ酸化処理及び電解めっき処理をした。
<1. Manufacturing of composite copper foil>
In Examples 1 to 27 and Comparative Examples 1 to 9, DR-WS (manufactured by Furukawa Electric Co., Ltd., thickness: 18 μm) was used as the copper foil. In Comparative Example 10, FV-WS (manufactured by Furukawa Electric Co., Ltd., thickness: 18 μm) that had already been roughened and plated on only one side was used. In Example 16, only the shiny side (the glossy side; the side that is flat compared to the opposite side) of DR-WS was subjected to oxidation treatment and electrolytic plating treatment.
(1)前処理
[アルカリ脱脂処理]
銅箔を、液温50℃、40g/Lの水酸化ナトリウム水溶液に1分間浸漬した後、水洗を行った。
[酸洗浄処理]
アルカリ脱脂処理を行った銅箔を、液温25℃、10重量%の硫酸水溶液に2分間浸漬した後、水洗を行った。
[プレディップ処理]
酸洗浄処理を行った銅箔を、液温40℃、水酸化ナトリウム(NaOH)1.2g/Lのプレディップ用薬液に1分間浸漬した。
(1) Pretreatment [Alkaline degreasing treatment]
The copper foil was immersed in a 40 g/L aqueous solution of sodium hydroxide at a liquid temperature of 50° C. for 1 minute, and then rinsed with water.
[Acid cleaning treatment]
The copper foil that had been subjected to the alkaline degreasing treatment was immersed in a 10% by weight aqueous sulfuric acid solution at a liquid temperature of 25° C. for 2 minutes, and then rinsed with water.
[Pre-dip processing]
The copper foil that had been subjected to the acid cleaning treatment was immersed for 1 minute in a pre-dip chemical solution containing 1.2 g/L of sodium hydroxide (NaOH) at a liquid temperature of 40°C.
(2)酸化処理
アルカリ処理を行った銅箔を、実施例1~15、17~27及び比較例1~7及び9は各々表1に記載の酸化処理用水溶液に所定の条件で含浸させることにより、両面に対して酸化処理を行った。実施例16は、表1に記載の酸化処理用水溶液の液面に銅箔を浮かせて処理することにより、片面に対してのみ酸化処理を行った。
これらの処理後、銅箔を水洗した。
(2) Oxidation Treatment The alkali-treated copper foil was immersed in an aqueous oxidation treatment solution shown in Table 1 under the prescribed conditions to perform an oxidation treatment on both sides in Examples 1 to 15, 17 to 27 and Comparative Examples 1 to 7 and 9. In Example 16, the copper foil was floated on the surface of the aqueous oxidation treatment solution shown in Table 1 to perform the oxidation treatment on only one side.
After these treatments, the copper foil was washed with water.
(3)めっき処理
実施例1~15、17~27及び比較例1~9はニッケルめっき用電解液(硫酸ニッケル230g/l;ホウ酸25g/l)を用いて、表1に記載の条件でニッケルめっきを両面に施した。実施例16は、表1に記載の条件で、めっきしたい面の方のみにアノード電極を配置することにより、片面に対してのみめっき処理を行った。
(3) Plating Treatment In Examples 1 to 15, 17 to 27 and Comparative Examples 1 to 9, nickel plating was performed on both sides using a nickel plating electrolyte (nickel sulfate 230 g/L; boric acid 25 g/L) under the conditions shown in Table 1. In Example 16, plating was performed on only one side under the conditions shown in Table 1 by placing an anode electrode only on the side to be plated.
(4)カップリング処理
実施例1~4、6~27及び比較例3~9は表1に記載のシランカップリング剤溶液を片面に塗布し、バーコーターで余分なシランカップチング剤を取り除いた後、70度で1分間処理した。実施例5及び比較例1、2は、表1に記載のシランカップリング剤溶液に浸漬させた後、110度で1分間、両面を処理した。シランカップリング剤(3-メルカプトプロピルトリメトキシシラン(KBE-903);3-アミノプロピルトリメトキシシラン(KBM-903);3-メルカプトプロピルトリメトキシシラン(KBM-803);2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン(KBM-303);ビニルトリメトキシシラン(KBM-1003)3-メタクリロキシプロピルトリメトキシシラン(KBM-502);3-イソシアネートプロピルトリエトキシシラン(KBE-9007N);3-ウレイドプロピルトリアルコキシシラン(KBE-585);3-アクリロキシプロピルトリメトキシシラン(KBM-5103))は信越シリコーン社から購入した。
(4) Coupling Treatment In Examples 1 to 4, 6 to 27 and Comparative Examples 3 to 9, the silane coupling agent solution shown in Table 1 was applied to one side, and after removing excess silane coupling agent with a bar coater, treatment was performed at 70° C. for 1 minute. In Example 5 and Comparative Examples 1 and 2, the sample was immersed in the silane coupling agent solution shown in Table 1, and then both sides were treated at 110° C. for 1 minute. Silane coupling agents (3-mercaptopropyltrimethoxysilane (KBE-903); 3-aminopropyltrimethoxysilane (KBM-903); 3-mercaptopropyltrimethoxysilane (KBM-803); 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (KBM-303); vinyltrimethoxysilane (KBM-1003); 3-methacryloxypropyltrimethoxysilane (KBM-502); 3-isocyanatopropyltriethoxysilane (KBE-9007N); 3-ureidopropyltrialkoxysilane (KBE-585); 3-acryloxypropyltrimethoxysilane (KBM-5103)) were purchased from Shin-Etsu Silicones.
実施例及び比較例について、各々同じ条件で複数の試験片を作製した。なお、比較例10は市販品であるため、(1)~(4)の処理を行わずにそのまま試験片とした。
走査型電子顕微鏡(SEM)観察による実施例1と比較例10の断面画像(倍率50000倍)を図1に示す。実施例1においては、針状(結)晶銅酸化物に起因するほぼ同じ太さの、結晶性のニッケルめっきが施された針状の凸部(矢印)が確認できるのに対して、比較例10の銅粒子の電析による大きさの異なるこぶ状の凸部(矢印)が確認できた。かかる針状の凸部はニッケルめっき層が厚すぎると(たとえば比較例5)観察できない。
For each of the examples and comparative examples, a plurality of test pieces were prepared under the same conditions. Since the comparative example 10 was a commercially available product, it was used as a test piece without being subjected to the treatments (1) to (4).
Cross-sectional images (magnification: 50,000 times) of Example 1 and Comparative Example 10 observed with a scanning electron microscope (SEM) are shown in Fig. 1. In Example 1, needle-like protrusions (arrows) of approximately the same thickness caused by acicular (crystal) copper oxide and coated with crystalline nickel could be confirmed, whereas bump-like protrusions (arrows) of different sizes caused by electrodeposition of copper particles could be confirmed in Comparative Example 10. Such needle-like protrusions cannot be observed if the nickel plating layer is too thick (for example, Comparative Example 5).
<2.ニッケル及びシランカップリング剤の付着量の算出>
ニッケル及びシランカップリング剤の付着量は、12%硝酸に銅箔を溶解させ、得た液をICP発光分析装置5100 SVDV ICP-OES(アジレント・テクノロジー社製)を用いてNi及びSiの濃度を測定し、用いた銅箔の単位面積(片面処理の場合は銅箔の平面視面積、両面処理の場合は銅箔の平面視面積×2)あたりのNiの量及びSiの量として算出した。
2. Calculation of Adhering Amount of Nickel and Silane Coupling Agent
The amount of nickel and the amount of silane coupling agent attached was determined by dissolving the copper foil in 12% nitric acid, measuring the Ni and Si concentrations in the obtained solution using an ICP emission spectrometer 5100 SVDV ICP-OES (manufactured by Agilent Technologies), and calculating the amount of Ni and the amount of Si per unit area of the copper foil used (the area in plan view of the copper foil in the case of single-sided treatment, and the area in plan view of the copper foil x 2 in the case of double-sided treatment).
<3.BET比表面積の測定>
各試験片のBET比表面積(銅箔1gあたりの実際の全表面積)は、マイクロメリティクス社製多検体高性能比表面積測定装置3FLEXを使用して、クリプトンガス吸着BET多点法により測定した。測定前に、前処理として100℃で2時間の減圧乾燥を行った。
測定に使用する試験片は、元銅箔3.83gあたり、30mm×7mm×110枚に切り出して、測定装置内に導入した。
結果を表2に示す。
<3. Measurement of BET specific surface area>
The BET specific surface area (actual total surface area per 1 g of copper foil) of each test piece was measured by a krypton gas adsorption BET multipoint method using a multi-sample high-performance specific surface area measurement device 3FLEX manufactured by Micromeritics Corp. Prior to the measurement, the test pieces were pretreated by drying under reduced pressure at 100° C. for 2 hours.
The test pieces used for the measurement were cut into 110 pieces of 30 mm x 7 mm per 3.83 g of original copper foil, and were introduced into the measurement device.
The results are shown in Table 2.
<4.BET表面積比の算出>
用いた元銅箔の1gあたりの平面視面積と上記で測定されたBET比表面積を用いて、以下の計算式により算出した。
(1)第二の工程まで両面処理した銅箔の場合(実施例1~15、17~27及び比較例1~9)
(2)第二の工程まで片面処置した銅箔(実施例16)及び比較例10の場合
結果を表2に示す。
4. Calculation of BET surface area ratio
The plan view area per gram of the original copper foil used and the BET specific surface area measured above were used to calculate the specific surface area according to the following formula.
(1) In the case of copper foil treated on both sides up to the second step (Examples 1 to 15, 17 to 27 and Comparative Examples 1 to 9)
(2) In the case of copper foil treated on one side up to the second step (Example 16) and Comparative Example 10
The results are shown in Table 2.
<5.Ra及びRzの算出>
カップリング剤処理後の銅箔の処理面(両面処理した場合は、元箔の粗度がより小さい面)を、共焦点走査電子顕微鏡 OPTELICS H1200(レーザーテック株式会社製)を用いて銅箔の表面形状を測定し、JIS B 0601:2001(国際基準ISO4287-1997準拠)に定められた方法によりRa及びRzを算出した。測定条件として、スキャン幅は100μm、スキャンタイプはエリアとし、Light sourceはBlue、カットオフ値は1/5とした。オブジェクトレンズはx100、コンタクトレンズはx14、デジタルズームはx1、Zピッチは10nmの設定とし、3箇所のデータを取得し、Ra、Rzは3箇所の平均値とした。
結果を表2に示す。
5. Calculation of Ra and Rz
The treated surface of the copper foil after the coupling agent treatment (when both sides were treated, the surface with the smaller roughness of the original foil) was measured using a confocal scanning electron microscope OPTELICS H1200 (manufactured by Lasertec Corporation), and Ra and Rz were calculated according to the method specified in JIS B 0601:2001 (based on the international standard ISO4287-1997). The measurement conditions were a scan width of 100 μm, a scan type of area, a light source of Blue, and a cutoff value of 1/5. The object lens was set to x100, the contact lens to x14, the digital zoom to x1, and the Z pitch to 10 nm, and data was obtained at three locations, and Ra and Rz were average values of the three locations.
The results are shown in Table 2.
<6.ピール強度の測定>
各試験片の処理面(両面処理した場合は、元箔の粗度がより小さい面)に以下の条件で各樹脂基材を熱圧着させた。
MEGTRON7(パナソニック社製、厚み100μm)の場合、真空プレス機を用いて110℃になるまで加熱しながら0.49MPaで圧着しその後210℃の下、2.94MPaで120分保持することにより熱圧着した。
べクスターCT-Zフィルム(LCP)(クラレ社製、厚み50μm)の場合、真空プレス機を用いて260℃になるまで0MPaで加熱し、260℃到達後15分保持し、その後300℃になるまで加熱しながら4MPaで圧着する。その後300℃で10分保持することにより、熱圧着した。
PIXEO FRS(PI)(カネカ社製、厚み12.5μm)の場合、真空プレス機を用いて350℃の下、5MPaで20分保持することにより、熱圧着した。
回路配線板は10mm幅のテープでマスキングしてエッチングすることで作製した。その後、90°方向に50mm/minの速度で樹脂から銅箔を剥離した際の剥離強度を測定した。
<6. Measurement of peel strength>
Each resin substrate was heat-pressed to the treated surface of each test piece (in the case of double-sided treatment, the surface of the original foil with the smaller roughness) under the following conditions.
In the case of MEGTRON7 (manufactured by Panasonic, thickness 100 μm), the material was pressed at 0.49 MPa while being heated to 110° C. using a vacuum press, and then thermocompression bonded by holding at 210° C. and 2.94 MPa for 120 minutes.
In the case of Vecstar CT-Z film (LCP) (Kuraray Co., Ltd., thickness 50 μm), it was heated at 0 MPa using a vacuum press until it reached 260° C., held for 15 minutes after reaching 260° C., and then pressed at 4 MPa while heating until it reached 300° C. It was then held at 300° C. for 10 minutes for thermocompression bonding.
In the case of PIXEO FRS (PI) (manufactured by Kaneka Corporation, thickness 12.5 μm), thermocompression bonding was performed by holding the material at 350° C. and 5 MPa for 20 minutes using a vacuum press.
The circuit wiring board was prepared by masking with a 10 mm wide tape and etching. Thereafter, the copper foil was peeled from the resin in a 90° direction at a speed of 50 mm/min, and the peel strength was measured.
剥離強度の評価基準は、
MEGTRON7を用いた場合、
◎:0.6kgf/cm以上
○:0.5~0.6kgf/cm
△:0.4~0.5kgf/cm
×:0.4kgf/cm未満
とし;
ベクスターCT-Zフィルム(LCP)を用いた場合、
◎:0.5kgf/cm以上
○:0.4~0.5kgf/cm
△:0.3~0.4kgf/cm
×:0.3kgf/cm未満
とし;
PIXEO FRS(PI)を用いた場合、
◎:0.6kgf/cm以上
○:0.5~0.6kgf/cm
△:0.4~0.5kgf/cm
×:0.4kgf/cm未満
とした。
結果を表2に示す。実施例ではいずれも良好な剥離強度を示した。
The evaluation criteria for peel strength are:
When MEGTRON7 was used,
◎: 0.6 kgf/cm or more ○: 0.5 to 0.6 kgf/cm
△:0.4~0.5kgf/cm
×: Less than 0.4 kgf/cm;
When using Vecstar CT-Z film (LCP),
◎: 0.5 kgf/cm or more ○: 0.4 to 0.5 kgf/cm
△:0.3~0.4kgf/cm
×: Less than 0.3 kgf/cm;
When using PIXEO FRS (PI),
◎: 0.6 kgf/cm or more ○: 0.5 to 0.6 kgf/cm
△:0.4~0.5kgf/cm
×: Less than 0.4 kgf/cm
The results are shown in Table 2. All of the examples showed good peel strength.
<8.高周波特性の測定>
100μm厚のMEGTRON7に各試験片を熱圧着して、長さ200mmのマイクロストリップラインを作製した。回路幅は230μm、特性インピーダンスは50Ωとした。この伝送路にネットワーク・アナライザを用いて40GHzまでの高周波信号を伝送し、伝送損失を測定した。
伝送損失の評価基準は、40GHz時点で
◎:-9.5dB以上
○:-9.5dB未満から-10dB以上
×:-10dB未満
とした。
結果を表2に示す。実施例ではいずれも良好な結果を示した。
8. Measurement of high frequency characteristics
Each test piece was thermocompression bonded to a 100 μm thick MEGTRON7 to prepare a microstrip line with a length of 200 mm. The circuit width was 230 μm and the characteristic impedance was 50 Ω. A high-frequency signal up to 40 GHz was transmitted through this transmission line using a network analyzer to measure the transmission loss.
The evaluation criteria for transmission loss at 40 GHz were: ⊚: -9.5 dB or more; ◯: less than -9.5 dB to -10 dB or more; and x: less than -10 dB.
The results are shown in Table 2. All of the examples showed good results.
<8.エッチング性の測定>
MEGTRON7に各試験片を熱圧着して作製した銅張積層板を10cm×10cmサイズに切り出し、銅箔パターンをエッチングにより形成した。その後、IPC試験規格TM-650の2.5.17に基づき、最大レンジ1014Ωの抵抗計を用いて、樹脂基材上の抵抗を測定し、最大レンジ以上になるか(◎)、ならないか(×)でエッチング性を確認した。エッチングの際に、金属の残渣が樹脂基材表面に残留している場合は、導通が取れる。最大レンジ以上になるということは、導通が取れず、エッチングが良好であることを示す。
結果を表2に示す。実施例ではいずれも良好な結果を示した。
8. Measurement of Etching Properties
The copper-clad laminates prepared by thermocompression bonding each test piece to MEGTRON7 were cut into 10 cm x 10 cm size, and copper foil patterns were formed by etching. Thereafter, based on 2.5.17 of the IPC test standard TM-650, a resistance meter with a maximum range of 10 14 Ω was used to measure the resistance on the resin substrate, and the etching property was confirmed by whether it was equal to or greater than the maximum range (◎) or not (×). When metal residue remains on the surface of the resin substrate during etching, electrical continuity can be obtained. When it is equal to or greater than the maximum range, electrical continuity cannot be obtained, and etching is good.
The results are shown in Table 2. All of the examples showed good results.
第三の工程でシランカップリング剤層が形成される。比較例1、2、4のようにシランカップリング剤の付着量が少ない又はない場合は、密着性を得るために十分なシランカップリング剤が付着しておらず、密着性が確保できない。また、比較例3のようにシランカップリング剤の付着量が過剰すぎる場合は、シランカップリング剤層での破壊によって密着性が確保できなかった。これに対して、適切な量のシランカップリング剤を付着した実施例では、いずれの樹脂基材に対しても良好な密着性を示した。
第二の工程でニッケル層が形成される。比較例5~6は過剰なニッケルが付与されており、第一の工程で形成した微細凹凸形状が埋もれてしまい、アンカー効果が得られずに密着性が確保できなかった。高周波特性においても、過剰なニッケル付与による透磁率が影響して実施例に劣る。エッチング性においても、比較例6は過剰なニッケル付与によって、エッチングしきれずに樹脂表面にニッケルが残留した。比較例9はニッケルの付着量が不足しており保護層としての効果が十分得られておらず密着性が確保できなかった。これに対して、適切な量のニッケルが付着した実施例では、良好な特性を示した。
第一の工程で酸化処理により、微細凹凸形状を有する銅酸化物層が形成される。比較例7は第一の工程で過剰な凹凸形状を形成したため、その後の第二の工程でニッケルにより十分な保護層が形成できずに密着性が得られなかった。また、粗度が大きくなりすぎて高周波特性やエッチング特性にも悪い影響を及ぼした。比較例8は第一の工程を行っていないため、微細凹凸形状が形成されずにアンカー効果が低く十分な密着性が確保できなかった。これに対して、適切な微細凹凸形状を有する実施例では、良好な特性を示した。
In the third step, a silane coupling agent layer is formed. In the cases of Comparative Examples 1, 2, and 4 where the amount of silane coupling agent attached is small or absent, sufficient silane coupling agent is not attached to obtain adhesion, and adhesion cannot be ensured. In addition, in the case of Comparative Example 3 where the amount of silane coupling agent attached is excessive, adhesion cannot be ensured due to destruction of the silane coupling agent layer. In contrast, in the examples where an appropriate amount of silane coupling agent is attached, good adhesion was shown to all resin substrates.
In the second step, a nickel layer is formed. In Comparative Examples 5 and 6, excessive nickel was applied, and the fine uneven shape formed in the first step was buried, so that the anchor effect was not obtained and adhesion could not be ensured. The high frequency characteristics were also inferior to the Examples due to the influence of the magnetic permeability caused by the application of excessive nickel. In terms of etching properties, Comparative Example 6 was also not completely etched due to the application of excessive nickel, and nickel remained on the resin surface. In Comparative Example 9, the amount of nickel attached was insufficient, so the effect as a protective layer was not sufficiently obtained and adhesion could not be ensured. In contrast, the Examples in which an appropriate amount of nickel was attached showed good characteristics.
In the first step, a copper oxide layer having a fine uneven shape is formed by oxidation treatment. In Comparative Example 7, an excessive uneven shape was formed in the first step, so that a sufficient protective layer could not be formed by nickel in the subsequent second step, and adhesion was not obtained. In addition, the roughness became too large, which adversely affected the high frequency characteristics and etching characteristics. In Comparative Example 8, the first step was not performed, so that a fine uneven shape was not formed, the anchor effect was low, and sufficient adhesion could not be ensured. In contrast, the examples having an appropriate fine uneven shape showed good characteristics.
以上のように、本発明では、低粗度且つ表面積が大きいため、単位面積当たりのシランカップリング剤付着量が多くなることが特徴である。これによって比較例10のような従来の粗化粒子を有する銅箔と比較し、優れた高周波特性及び密着性を得ることが可能になった。As described above, the present invention is characterized by a low roughness and a large surface area, resulting in a large amount of silane coupling agent attached per unit area. This makes it possible to obtain superior high-frequency characteristics and adhesion compared to copper foils with conventional roughening particles such as those in Comparative Example 10.
本発明によって、新規な複合銅部材、並びにそれを用いた積層体及び電子部品、高周波伝送用の複合銅箔、並びにそれを用いた高周波伝送用積層体及び高周波伝送用電子部品を提供することができるようになった。
The present invention makes it possible to provide a novel composite copper member, a laminate and an electronic component using the same, a composite copper foil for high-frequency transmission, and a laminate for high-frequency transmission and an electronic component for high-frequency transmission using the same.
Claims (27)
前記シランカップリング剤層が形成された表面のRz(JIS B 0601:2001(国際基準ISO4287-1997準拠)に定められた方法により算出したもの)が0.2μm以上1.5μm以下であり、
前記ニッケル層の厚みが0.5mg/dm 2 以上10.0mg/dm 2 以下(銅部材単位面積あたりのニッケル重量)である複合銅部材。 A composite copper member having a layer containing needle-shaped copper oxide on at least a part of the surface of a copper member, a nickel layer on the layer containing copper oxide, and a silane coupling agent layer on the surface on which the nickel layer is formed, wherein the adhesion amount of the silane coupling agent layer is 7 μg/ dm2 or more and 900 μg/dm2 or less (Si converted weight per unit area of the copper member) ,
the Rz (calculated by the method defined in JIS B 0601:2001 (based on international standard ISO 4287-1997)) of the surface on which the silane coupling agent layer is formed is 0.2 μm or more and 1.5 μm or less;
A composite copper member , wherein the thickness of the nickel layer is 0.5 mg/dm2 or more and 10.0 mg/dm2 or less (nickel weight per unit area of the copper member).
前記シランカップリング剤層が形成された表面のBET表面積比(BET法により算出された、シランカップリング剤層が形成された表面の表面積/シランカップリング剤層が形成された銅部材の平面視野面積)が、3以上20以下であり、the BET surface area ratio of the surface on which the silane coupling agent layer is formed (surface area of the surface on which the silane coupling agent layer is formed/planar view area of the copper member on which the silane coupling agent layer is formed, calculated by the BET method) is 3 or more and 20 or less;
前記ニッケル層の厚みが0.5mg/dmThe thickness of the nickel layer is 0.5 mg/dm 22 以上10.0mg/dmMore than 10.0 mg/dm 22 以下(銅部材単位面積あたりのニッケル重量)である複合銅部材。A composite copper member having a nickel weight per unit area of the copper member of:
複合銅部材のシランカップリング剤層に対して、特定条件で樹脂基材を熱圧着させた後、90°方向に50mm/minの速度で樹脂基材から複合銅部材を剥離した際のピール強度が0.4kgf/cm以上である複合銅部材。A composite copper member having a peel strength of 0.4 kgf/cm or more when a resin substrate is thermocompression-bonded to a silane coupling agent layer of the composite copper member under specific conditions and then the composite copper member is peeled from the resin substrate in a 90° direction at a speed of 50 mm/min.
Y―Si(OR)3
(Yは
ビニル基、エポキシ基、アミノ基、メタクリル基、メルカプト基、3-メルカプトプロピル基、3-アミノプロピル基、3-メルカプトプロピル基、2-(3,4-エポキシシクロヘキシル)エチル基、3-メタクリロキシプロピル基、3-イソシアネートプロピル基、3-ウレイドプロピル基及び3-アクリロキシプロピル基からなる群から選択され;
-ORはアルコキシ基である)で表される化合物を含む、請求項1~8のいずれか一項に記載の複合銅部材。 The silane coupling agent is represented by the following formula:
Y-Si(OR) 3
(Y is selected from the group consisting of vinyl, epoxy, amino, methacryl, mercapto, 3-mercaptopropyl, 3-aminopropyl, 3-mercaptopropyl, 2-(3,4-epoxycyclohexyl)ethyl, 3-methacryloxypropyl, 3-isocyanatopropyl, 3-ureidopropyl, and 3-acryloxypropyl groups;
The composite copper member according to any one of claims 1 to 8 , comprising a compound represented by the formula (I) (wherein -OR is an alkoxy group).
酸化処理により、銅部材の少なくとも一部の表面に、厚さが平均400nm以下で、針状の銅酸化物層を形成する第一の工程と、
前記銅酸化物層の上に、電解めっき処理により、厚みが0.5mg/dm 2 以上10.0mg/dm 2 以下(銅部材単位面積あたりのニッケル重量)であるニッケル層を形成する第二の工程と、
前記ニッケル層が形成された表面に、7μg/dm2以上900μg/dm2以下(銅部材単位面積あたりのSi換算重量)のシランカップリング剤をコートする第三の工程を含む、
製造方法。 A method for producing a composite copper component treated with a silane coupling agent, comprising:
a first step of forming a needle-like copper oxide layer having an average thickness of 400 nm or less on at least a part of a surface of a copper member by oxidation treatment;
A second step of forming a nickel layer having a thickness of 0.5 mg/dm2 or more and 10.0 mg/dm2 or less (nickel weight per unit area of the copper member) on the copper oxide layer by electrolytic plating;
A third step of coating the surface on which the nickel layer is formed with a silane coupling agent in an amount of 7 μg/dm 2 or more and 900 μg/dm 2 or less (weight in terms of Si per unit area of the copper member),
Manufacturing method.
酸化処理により、銅部材の少なくとも一部の表面に、厚さが平均400nm以下で、針状の銅酸化物層を形成する第一の工程と、a first step of forming a needle-like copper oxide layer having an average thickness of 400 nm or less on at least a part of a surface of a copper member by oxidation treatment;
前記銅酸化物層の上に、電解めっき処理によりニッケル層を形成する第二の工程と、a second step of forming a nickel layer on the copper oxide layer by electrolytic plating;
前記ニッケル層が形成された表面に、7μg/dmThe surface on which the nickel layer is formed is coated with 7 μg/dm 22 以上900μg/dmMore than 900 μg/dm 22 以下(銅部材単位面積あたりのSi換算重量)のシランカップリング剤をコートする第三の工程を含み、A third step of coating the copper member with a silane coupling agent in an amount of the following (weight in terms of Si per unit area of the copper member):
複合銅部材のシランカップリング剤で処理された面に対して、特定条件で樹脂基材を熱圧着させた後、90°方向に50mm/minの速度で樹脂基材から複合銅部材を剥離した際のピール強度が0.4kgf/cm以上である、A resin substrate is thermocompressed under specific conditions to a surface of the composite copper member treated with a silane coupling agent, and then the composite copper member is peeled from the resin substrate in a 90° direction at a speed of 50 mm/min. The peel strength is 0.4 kgf/cm or more.
製造方法。Manufacturing method.
X―Si(OR)3
(Xは
ビニル基、エポキシ基、アミノ基、メタクリル基、メルカプト基、3-メルカプトプロピル基、3-アミノプロピル基、3-メルカプトプロピル基、2-(3,4-エポキシシクロヘキシル)エチル基、ビニル基、3-メタクリロキシプロピル基、3-イソシアネートプロピル基、3-ウレイドプロピル基及び3-アクリロキシプロピル基からなる群から選択され;
-ORはアルコキシ基である)で表される化合物を含む、請求項14~19のいずれか一項に記載の製造方法。 The silane coupling agent is represented by the following formula:
X-Si(OR) 3
(X is selected from the group consisting of vinyl, epoxy, amino, methacryl, mercapto, 3-mercaptopropyl, 3-aminopropyl, 3-mercaptopropyl, 2-(3,4-epoxycyclohexyl)ethyl, vinyl, 3-methacryloxypropyl, 3-isocyanatopropyl, 3-ureidopropyl, and 3-acryloxypropyl groups;
The method according to any one of claims 14 to 19 , comprising a compound represented by the formula (I) (-OR is an alkoxy group).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019236800 | 2019-12-26 | ||
JP2019236800 | 2019-12-26 | ||
PCT/JP2020/047772 WO2021132191A1 (en) | 2019-12-26 | 2020-12-21 | Composite copper member treated with silane coupling agent |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021132191A1 JPWO2021132191A1 (en) | 2021-07-01 |
JP7601400B2 true JP7601400B2 (en) | 2024-12-17 |
Family
ID=76574175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021567457A Active JP7601400B2 (en) | 2019-12-26 | 2020-12-21 | Composite copper components treated with silane coupling agents |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7601400B2 (en) |
KR (1) | KR20220119391A (en) |
CN (1) | CN114846175A (en) |
TW (1) | TW202130855A (en) |
WO (1) | WO2021132191A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113707885B (en) * | 2021-08-30 | 2022-09-13 | 哈尔滨工业大学 | Modification method of negative current collector in non-negative alkali metal ion battery |
JPWO2023181627A1 (en) * | 2022-03-22 | 2023-09-28 | ||
WO2024009861A1 (en) * | 2022-07-04 | 2024-01-11 | 株式会社レゾナック | Copper-clad laminate, printed wiring board, and semiconductor package |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017099094A1 (en) | 2015-12-09 | 2017-06-15 | 古河電気工業株式会社 | Surface-treated copper foil for printed circuit board, copper-clad laminate for printed circuit board, and printed circuit board |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08309918A (en) * | 1995-05-22 | 1996-11-26 | Nippon Denkai Kk | Copper clad laminated sheet, printed circuit board using the same and production of them |
JP5463117B2 (en) * | 2009-10-20 | 2014-04-09 | 株式会社日立製作所 | Low loss wiring board, multilayer wiring board, copper foil and laminated board used therefor |
KR101920976B1 (en) * | 2013-09-20 | 2018-11-21 | 미쓰이금속광업주식회사 | Copper foil, copper foil with carrier foil, and copper-clad laminate |
JP6178035B1 (en) * | 2016-03-03 | 2017-08-09 | 三井金属鉱業株式会社 | Method for producing copper clad laminate |
CN110546313A (en) * | 2017-04-25 | 2019-12-06 | 古河电气工业株式会社 | Surface treated copper foil |
-
2020
- 2020-12-21 CN CN202080089622.XA patent/CN114846175A/en active Pending
- 2020-12-21 JP JP2021567457A patent/JP7601400B2/en active Active
- 2020-12-21 KR KR1020227021868A patent/KR20220119391A/en unknown
- 2020-12-21 WO PCT/JP2020/047772 patent/WO2021132191A1/en active Application Filing
- 2020-12-24 TW TW109146002A patent/TW202130855A/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017099094A1 (en) | 2015-12-09 | 2017-06-15 | 古河電気工業株式会社 | Surface-treated copper foil for printed circuit board, copper-clad laminate for printed circuit board, and printed circuit board |
Also Published As
Publication number | Publication date |
---|---|
TW202130855A (en) | 2021-08-16 |
JPWO2021132191A1 (en) | 2021-07-01 |
KR20220119391A (en) | 2022-08-29 |
WO2021132191A1 (en) | 2021-07-01 |
CN114846175A (en) | 2022-08-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7601400B2 (en) | Composite copper components treated with silane coupling agents | |
TWI704048B (en) | Surface-treated copper foil and copper clad laminate made of it | |
TWI611738B (en) | High-frequency signal transmission circuit forming surface-treated copper foil, high-frequency signal transmission printed circuit board manufacturing copper-clad laminate and high-frequency signal transmission printed circuit board | |
WO2021131359A1 (en) | Surface-treated copper foil and method for manufacturing same | |
WO2021172096A1 (en) | Composite copper member having voids | |
JP7479617B2 (en) | Composite copper components | |
EP4050123A1 (en) | Composite copper member | |
TWI805902B (en) | Surface treated copper foil, copper clad laminate and printed circuit board | |
JP7352939B2 (en) | composite copper parts | |
JP2023051784A (en) | Copper member | |
WO2024219163A1 (en) | Metal member | |
TWI843830B (en) | Composite copper components and electronic parts | |
WO2022050001A1 (en) | Copper foil and laminate, and manufacturing methods therefor | |
WO2024219162A1 (en) | Metal member | |
JP7456579B2 (en) | Method for manufacturing a metal member having a metal layer | |
EP4319494A1 (en) | Laminate for wiring board | |
TWI756155B (en) | Surface-treated copper foil and copper clad laminate | |
WO2023140063A1 (en) | Composite copper member and power module including composite copper member | |
TW202330256A (en) | Metal member | |
JP2023145243A (en) | Method for manufacturing printed wiring board | |
JP2023145211A (en) | Method for manufacturing printed wiring board | |
TW202043034A (en) | Laminate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230615 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20230928 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20231002 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241009 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20241126 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20241128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7601400 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |