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JP7525850B2 - SiOx layer-equipped substrate - Google Patents

SiOx layer-equipped substrate Download PDF

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JP7525850B2
JP7525850B2 JP2022189207A JP2022189207A JP7525850B2 JP 7525850 B2 JP7525850 B2 JP 7525850B2 JP 2022189207 A JP2022189207 A JP 2022189207A JP 2022189207 A JP2022189207 A JP 2022189207A JP 7525850 B2 JP7525850 B2 JP 7525850B2
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substrate
layer
rubber
sio
roll
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JP2023016901A (en
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成司 町田
成康 町田
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Miyako Roller Industry Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02WCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00Technologies for solid waste management
    • Y02W30/50Reuse, recycling or recovery technologies
    • Y02W30/62Plastics recycling; Rubber recycling

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Description

本発明は、ロール状やシート状、板状といった各種形状の部材に関し、より詳しくは、基材の表層にシリコン(ケイ素)と酸素が化合した非晶質のSiOを含む層(以下「SiO層」という)を備えた部材(以下「SiO層具備基材」という)に関する。 The present invention relates to members of various shapes, such as roll, sheet, and plate shapes, and more specifically to a member (hereinafter referred to as an "SiO X layer-containing substrate") having a layer containing amorphous SiO X formed by a compound of silicon and oxygen on the surface layer of a substrate.

従来、フィルムの製造ラインや半導体の製造ライン、印刷機、事務機器といった様々な場面でローラーが用いられている。使用されるローラーとしては、ゴムロールや金属ロール、樹脂ロール、メッキロール等がある(例えば、特許文献1)。 Conventionally, rollers have been used in a variety of situations, such as film production lines, semiconductor production lines, printing machines, and office equipment. Rollers used include rubber rolls, metal rolls, resin rolls, and plated rolls (for example, Patent Document 1).

特開2015-113919号公報JP 2015-113919 A

しかし、前記ゴムロールは、基材となるゴム材の内部からシロキサン等の成分が表面に染み出すことがあり、染み出した成分がフィルムやプリント基板に付着して、絶縁破壊を引き起こすことがある。 However, components such as siloxane can seep out from inside the rubber base material of the rubber roll and onto the surface. The seeped components can adhere to the film or printed circuit board, causing insulation breakdown.

また、前記金属ロールは、基材となる金属の内部から金属イオンが溶出し、溶出した金属イオンに起因する不具合(例えば、リチウムイオン二次電池の正極板の製造にあたり、集電体に活物質を塗布する際に溶出した金属イオンが集電体に付着して電池の性能を低下させる不具合等)が生じることがある。樹脂ロールでも基材となる樹脂材の内部から分散剤等の成分が染み出し、染み出した成分が前記不具合の原因となることがある。 In addition, metal rolls can cause problems due to metal ions eluting from inside the metal substrate (for example, when manufacturing positive plates for lithium-ion secondary batteries, metal ions eluted during application of active material to a current collector can adhere to the current collector, reducing the performance of the battery). Resin rolls can also cause components such as dispersants to seep out from inside the resin substrate, causing the above problems.

金属ロールや樹脂ロール、ゴムロールの他には、メッキ処理によって表面にメッキ層を備えたもの(メッキロール)もあるが、メッキロールの場合にも、ゴム材や樹脂材の内側から染み出す成分や金属から溶出する金属イオン(以下、これらを「表出成分」といい、ゴムや樹脂から成分が染み出すこと及び金属から金属イオンが溶出することを「表出」という)を抑えることはできず、同様の問題が生じることがある。 In addition to metal rolls, resin rolls, and rubber rolls, there are also rolls that have a plated layer on the surface through plating treatment (plated rolls). However, even in the case of plated rolls, it is not possible to prevent components seeping out from inside the rubber or resin material or metal ions eluting from the metal (hereinafter, these are referred to as "exposed components", and the seeping out of components from rubber or resin and the elution of metal ions from metal are referred to as "exposure"), and similar problems can occur.

また、前述の問題はロールに限らず、シート状の部材や板状の部材、ベルト状の部材など、その形状に関わらず生じうる問題である。 The above problem is not limited to rolls, but can occur with any shape of material, including sheet-like, plate-like, or belt-like materials.

本発明は前記事情を鑑みてなされたものであり、その解決課題は、前記表出成分によって引き起こされる各種の不具合を防止することのできるSiO層具備基材を提供することにある。 The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a substrate having a SiOX layer capable of preventing various problems caused by the above-mentioned exposed components.

本発明のSiO層具備基材は、表出成分を含有する基材であって、基材の表層にSiO層を備えたものである。基材はゴム製、金属製、樹脂製のいずれかとすることができる。本発明のSiO層具備基材は、基材の外側にメッキ層を備え、そのメッキ層の表層にSiO層を備えたものとすることもできる。基材はロール状とすることができる。 The SiO X layer-equipped substrate of the present invention is a substrate containing an exposed component, and is provided with a SiO X layer on the surface layer of the substrate. The substrate can be made of rubber, metal, or resin. The SiO X layer-equipped substrate of the present invention can also be provided with a plating layer on the outside of the substrate, and a SiO X layer on the surface layer of the plating layer. The substrate can be in the form of a roll.

本件発明のSiO層具備基材は、基材の表層にSiO層を備えているため、基材内部からの成分の染み出しや金属イオンの溶出を抑制することができ、染み出した成分や溶出した金属イオンに起因する各種不具合を解消することができる。 The SiO X layer-equipped substrate of the present invention has a SiO X layer on the surface of the substrate, and therefore can suppress the seepage of components from inside the substrate and the elution of metal ions, thereby eliminating various problems caused by the seeped components and eluted metal ions.

(a)は本発明のSiO層具備基材の一例を示す断面図、(b)は(a)のIb部拡大図。FIG. 2A is a cross-sectional view showing an example of a substrate having a SiOX layer according to the present invention, and FIG. 2B is an enlarged view of a portion Ib in FIG. SiO層の形成に用いる装置一例を示す概略図。FIG. 1 is a schematic diagram showing an example of an apparatus used for forming a SiO X layer. (a)は本発明のSiO層具備基材の他例を示す断面図、(b)は本発明のSiO層具備基材の他例を示す断面図。2A is a cross-sectional view showing another example of a substrate having a SiO X layer according to the present invention; FIG. 2B is a cross-sectional view showing another example of a substrate having a SiO X layer according to the present invention; FIG.

(実施形態)
本発明のSiO層具備基材の実施形態の一例を、図面を参照して説明する。ここでは、SiO層具備基材が、ゴムロールの場合を一例とする。一例として図1(a)(b)に示すSiO層具備基材は、ゴム製基材1の表層にSiO層2を備えている。
(Embodiment)
An embodiment of the SiO X layer-equipped substrate of the present invention will be described with reference to the drawings. Here, the SiO X layer-equipped substrate is a rubber roll. As an example, the SiO X layer-equipped substrate shown in Figure 1 (a) and (b) has a SiO X layer 2 on the surface of a rubber substrate 1.

前記ゴム製基材1は、ゴムロールの母材となる部分である。ゴム製基材1には、例えば、汎用ゴムであるエチレンプロピレンジエンゴム(EPDM)やスチレンブタジエンゴム(SBD)、ニトリルゴム(NBR)、クロロプレンゴム(CR)、ブチルゴム(IIR)、ウレタンゴム(U)、シリコーンゴム(Si)、フッ素ゴム(F)等を用いることができる。 The rubber base material 1 is the part that will be the base material of the rubber roll. For example, the rubber base material 1 can be made of general-purpose rubber such as ethylene propylene diene rubber (EPDM), styrene butadiene rubber (SBD), nitrile rubber (NBR), chloroprene rubber (CR), butyl rubber (IIR), urethane rubber (U), silicone rubber (Si), or fluororubber (F).

この実施形態のゴム製基材1は中空ロールであり、その内側には、ゴム製基材1の変形を防止する芯金(硬質管)3が設けられている。硬質管3には、例えば、金属パイプや炭素鋼パイプ、ステンレスパイプなどを用いることができる。 In this embodiment, the rubber substrate 1 is a hollow roll, and a core metal (hard tube) 3 is provided on the inside to prevent deformation of the rubber substrate 1. The hard tube 3 can be, for example, a metal pipe, a carbon steel pipe, or a stainless steel pipe.

図1(a)(b)に示すように、この実施形態のゴム製基材1及び硬質管3は、ベアリング4を介して軸材5の外側に装備されている。この場合、ベアリング4はゴム製基材1の両端側に埋設された金属性のフランジ6などを介して設けるのが好ましい。ゴム製基材1は無垢材(中実材)であってもよい。また、ゴム製基材1はロール状以外の形状、例えば、円柱状や円錐状、平板状、シート状、球状、多面形状、棒状等、ベルト状とすることもできる。 As shown in Fig. 1(a) and (b), the rubber base material 1 and the hard tube 3 in this embodiment are mounted on the outside of the shaft material 5 via the bearing 4. In this case, it is preferable that the bearing 4 is provided via a metallic flange 6 embedded on both ends of the rubber base material 1. The rubber base material 1 may be a solid material. The rubber base material 1 may also be in a shape other than a roll, such as a cylindrical shape, a conical shape, a flat plate shape, a sheet shape, a spherical shape, a multi-faceted shape, a rod shape, or a belt shape.

前記SiO層2は、シリコン(ケイ素)と酸素が化合した非晶質のSiOを含む層(アモルファスシリコン層)であり、代表的な例では、SiOやSiO等があげられる。SiO層2はゴム製基材1の表層に形成される。ここでいう表層とは、ゴム製基材1の表面よりも内側を意味するが、ゴム製基材1の表面よりも盛り上がる(皮膜として表面上に形成される)場合も含まれる。 The SiO X layer 2 is a layer (amorphous silicon layer) containing non-crystalline SiO X formed by the compound of silicon and oxygen, and typical examples include SiO and SiO 2. The SiO X layer 2 is formed on the surface layer of the rubber substrate 1. The surface layer here means the inner side of the surface of the rubber substrate 1, but also includes the case where the SiO X layer 2 protrudes above the surface of the rubber substrate 1 (is formed on the surface as a film).

この実施形態では、SiO層2を厚さ1μm程度としているが、この厚さは一例であり、膜厚は1μmより厚くても薄くてもよい。いずれの場合も、SiO層2がゴム製基材1の表面に食い込み、ゴム製基材1の表面が変質又は改質された状態となる。 In this embodiment, the SiOx layer 2 has a thickness of about 1 μm, but this thickness is an example, and the film thickness may be thicker or thinner than 1 μm. In either case, the SiOx layer 2 bites into the surface of the rubber substrate 1, and the surface of the rubber substrate 1 is altered or modified.

SiO層2は、例えば、図2に示す装置を用いて生成することができる。図2において、7は真空チャンバー、8はRF高周波電源、9はRF電極、10は高電圧パルス電源、11はガス注入口である。RF高周波電源8に代えてICP(Inductively・Coupled・Plasma:誘導結合プラズマ)電源を用いることもできる。 The SiOx layer 2 can be produced, for example, by using the apparatus shown in Fig. 2. In Fig. 2, 7 is a vacuum chamber, 8 is an RF high-frequency power source, 9 is an RF electrode, 10 is a high-voltage pulse power source, and 11 is a gas inlet. An ICP (Inductively Coupled Plasma) power source can also be used instead of the RF high-frequency power source 8.

前記真空チャンバー7内にゴム製基材1をセットし、真空チャンバー7内を真空状態にする。次いで、ガス注入口11から真空チャンバー7内にケイ素を含む原料ガス(例えば、HMDSO、HMDS、TMS等)を注入する。原料ガスを真空チャンバー7内に注入した状態でRF高周波電源8により高周波電圧を印加するとプラズマが発生する。これにより真空チャンバー7内の原料ガスが反応し、ゴム製基材1の表層が変質又は改質して、ゴム製基材1の表層にガラス質であるSiO層2が形成される。 The rubber substrate 1 is placed in the vacuum chamber 7, and the inside of the vacuum chamber 7 is evacuated. Next, a silicon-containing raw material gas (e.g., HMDSO, HMDS, TMS, etc.) is injected into the vacuum chamber 7 from the gas inlet 11. When a high-frequency voltage is applied by the RF high-frequency power supply 8 while the raw material gas is injected into the vacuum chamber 7, plasma is generated. As a result, the raw material gas in the vacuum chamber 7 reacts, and the surface layer of the rubber substrate 1 is altered or modified, and a glassy SiO X layer 2 is formed on the surface layer of the rubber substrate 1.

原料に使用するHMDSO、HMDS、TMSは純粋なケイ素(Si)のガスではなく炭素(C)や水素(H)等の元素を含んでいる。そのため、本発明のSiOの構造体の中には炭素や水素などを含有してもよい。 The HMDSO, HMDS, and TMS used as raw materials are not pure silicon (Si) gases but contain elements such as carbon (C) and hydrogen (H), etc. Therefore, the SiO X structure of the present invention may contain carbon, hydrogen, etc.

なお、原料ガスの供給に際して、原料ガスの分解を促進しやすくするためのヘリウム(He)やアルゴン(Ar)を同時に供給することもできる。また、SiOを形成しやすくするため、原料ガスと同時に酸素(O)を供給することもできる。 When the source gas is supplied, helium (He) or argon (Ar) may be supplied at the same time to facilitate decomposition of the source gas. Also, oxygen (O 2 ) may be supplied at the same time as the source gas to facilitate formation of SiO X.

図2の装置を用いてSiO層2を形成する場合、RF出力は、500Wを中心として50W~3kWの範囲で設定することができる。 When the SiOx layer 2 is formed using the apparatus of FIG. 2, the RF output can be set in the range of 50W to 3kW with 500W as the center.

(その他の実施形態)
前記実施形態では、ゴム製基材1を、ベアリング4を介して軸材5の外側に装備する場合を一例としているが、図3(a)に示すように、ゴム製基材1は金属製や樹脂製といった各種材質製の芯材12の外側に装備することもできる。
Other Embodiments
In the above embodiment, the rubber base material 1 is mounted on the outside of the shaft material 5 via the bearing 4 as an example. However, as shown in FIG. 3( a ), the rubber base material 1 can also be mounted on the outside of a core material 12 made of various materials such as metal or resin.

硬質の芯材12を用いる場合、図3(b)に示すように、芯材12を基材として、その表層にSiO層2を直接形成することもできる。 When a hard core material 12 is used, as shown in FIG. 3(b), the core material 12 can be used as a base material and the SiOx layer 2 can be formed directly on the surface thereof.

前記実施形態では、ゴム製基材1がロール状の場合を一例としているが、ゴム製基材1はロール状以外の形状、例えば、円柱状や円錐状、平板状、シート状、球状、多面形状、棒状、ベルト状等とすることもできる。 In the above embodiment, the rubber substrate 1 is in a roll shape, but the rubber substrate 1 can also be in a shape other than a roll, such as a cylindrical shape, a cone shape, a flat plate shape, a sheet shape, a sphere shape, a multi-sided shape, a rod shape, a belt shape, etc.

前記実施形態では、基材がゴム製基材1の場合を一例としているが、基材は金属製や樹脂製のものであってもよい。また、基材は、金属製基材や樹脂製基材、ゴム製基材の外側にメッキ層を備えた基材(メッキ処理基材)であってもよい。 In the above embodiment, the substrate is a rubber substrate 1, but the substrate may be made of metal or resin. The substrate may also be a metal substrate, a resin substrate, or a substrate with a plated layer on the outside of a rubber substrate (plated substrate).

前記実施形態では、真空チャンバー7内にHMDSOやHMDS、TMSといったケイ素を含む原料ガスを注入してSiO層2を形成する場合を一例としているが、基材自体にケイ素が含まれている場合には、前記原料ガスは注入しなくてもよい。この場合、酸素(O)をソースガスとして、アルゴン(Ar)やヘリウム(He)、窒素(N)を励起ガスとして発生させ、プラズマを用いることで基材内のケイ素が反応し、基材の表層にSiO層2を形成させることもできる。励起ガスに窒素を使用した場合、SiOの構造体に窒素が含有するが問題はない。 In the above embodiment, the SiO X layer 2 is formed by injecting a silicon-containing source gas such as HMDSO, HMDS, or TMS into the vacuum chamber 7, but if the substrate itself contains silicon, the source gas does not need to be injected. In this case, oxygen (O 2 ) is used as a source gas, and argon (Ar), helium (He), or nitrogen (N) is generated as an excitation gas, and the silicon in the substrate is reacted by using plasma, so that the SiO X layer 2 can be formed on the surface layer of the substrate. When nitrogen is used as the excitation gas, the SiO X structure contains nitrogen, but this does not cause any problems.

前記実施形態のように、基材の表層にSiO層2が形成されることで、表出成分の表出が防止される。この結果、表出成分(例えば、シロキサン)がフィルムに付着することによる品質の低下等の問題が解消されるなど、従来問題となっていた表出成分に起因する各種の不具合を解消することができる。 As in the above embodiment, the SiOx layer 2 is formed on the surface layer of the substrate, thereby preventing the exposure of exposed components. As a result, problems such as deterioration of quality due to the exposed components (e.g., siloxane) adhering to the film can be eliminated, and various problems caused by the exposed components that have been a problem in the past can be eliminated.

また、摩擦係数や粘着性の高い従来のゴムロールでは、フィルムのような薄物の対象物を処理する場合に対象物にシワがよるなどの課題があったが、前記実施形態のように基材の表層にSiO層2が形成されることで、滑り性や剥離性が向上し、このような問題も生じにくくなる。 Furthermore, in the case of a conventional rubber roll having a high coefficient of friction and adhesion, there was a problem that the target object would be wrinkled when a thin target object such as a film was processed. However, by forming the SiOx layer 2 on the surface layer of the substrate as in the above embodiment, the slipperiness and peelability are improved, and such a problem is unlikely to occur.

加えて、前記実施形態のように、基材の表層にSiO層2が形成されることで、耐熱性や耐摩耗性、剥離性が向上するため、摩擦による基材の表面の摩耗を抑えることもできる。さらに、摩耗による摩耗粉の発生が少なくなるため、接触したフィルムやプリント基板等電子部材の汚れや損傷が生じにくくなる。 In addition, as in the above embodiment, the SiOx layer 2 is formed on the surface of the substrate, which improves heat resistance, wear resistance, and peelability, and therefore reduces wear on the surface of the substrate due to friction. Furthermore, the generation of wear powder due to wear is reduced, which makes it difficult for electronic components such as films and printed circuit boards that come into contact with the substrate to become dirty or damaged.

前記各実施形態のSiO層具備基材のように、ロール状のゴム製基材1の表層にSiO層2を形成することで、フィルムやプリント基板、ガラス基板等のガイドロールや圧延ロール、搬送ロール、塗布ロール、ドライラミネートロール、プラテンロール等として用いることができる。 As in the SiOX layer-equipped substrate of each of the above-mentioned embodiments, by forming a SiOX layer 2 on the surface layer of a roll-shaped rubber substrate 1, it can be used as a guide roll, rolling roll, conveying roll, coating roll, dry laminating roll, platen roll, etc. for films, printed circuit boards, glass substrates, etc.

本発明のゴム材表層のSiO層具備基材は、フィルムの製造ラインや半導体の製造ラインといった各種製造ラインをはじめ、印刷機や複合機等の各種事務機器で利用されるローラー、その他形状の各種部材として広く利用することができる。 The substrate having a SiOx layer on the surface of the rubber material of the present invention can be widely used as rollers used in various production lines such as film production lines and semiconductor production lines, as well as in various office equipment such as printers and multifunction machines, and as various other shaped components.

1 ゴム製基材
2 SiO層(アモルファスシリコン層)
3 硬質管
4 ベアリング
5 軸材
6 フランジ
7 真空チャンバー
8 RF高周波電源
9 RF電極
10 高電圧パルス電源
11 ガス注入口
12 芯材
1 Rubber substrate 2 SiOx layer (amorphous silicon layer)
3 Hard tube 4 Bearing 5 Shaft material 6 Flange 7 Vacuum chamber 8 RF high-frequency power source 9 RF electrode 10 High-voltage pulse power source 11 Gas inlet 12 Core material

Claims (1)

表出成分を含有する金属製の基材であって、
前記金属製の基材の外側にメッキ層を備え、
前記メッキ層の表面よりも内側を含む表層に、前記金属製の基材からの金属イオンの表出又は/及び前記メッキ層からの金属イオンの表出を抑制するSiO層が設けられた、
ことを特徴とするSiO層具備基材。
A metal substrate containing an exposed component,
A plating layer is provided on the outer side of the metal base material,
a SiOx layer is provided on a surface layer including an inner side of the surface of the plating layer, the SiOx layer suppressing the release of metal ions from the metal base material and/or the release of metal ions from the plating layer ;
A substrate having a SiOx layer.
JP2022189207A 2019-09-12 2022-11-28 SiOx layer-equipped substrate Active JP7525850B2 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006176865A (en) 2004-12-24 2006-07-06 Utec:Kk DLC film or SiO2 film, container and CVD film forming apparatus
JP2008291349A (en) 2007-04-27 2008-12-04 Canon Inc Method for manufacturing roller member for electrography
JP2013028861A (en) 2011-07-29 2013-02-07 Miyako Roller Industry Co Method for laying substrate with hydrophilic dlc film, and substrate laid with hydrophilic dlc film
JP2014518940A (en) 2011-06-16 2014-08-07 カーハーエス コーポプラスト ゲーエムベーハー Workpiece plasma processing method and workpiece with gas barrier layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006176865A (en) 2004-12-24 2006-07-06 Utec:Kk DLC film or SiO2 film, container and CVD film forming apparatus
JP2008291349A (en) 2007-04-27 2008-12-04 Canon Inc Method for manufacturing roller member for electrography
JP2014518940A (en) 2011-06-16 2014-08-07 カーハーエス コーポプラスト ゲーエムベーハー Workpiece plasma processing method and workpiece with gas barrier layer
JP2013028861A (en) 2011-07-29 2013-02-07 Miyako Roller Industry Co Method for laying substrate with hydrophilic dlc film, and substrate laid with hydrophilic dlc film

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