JP7517886B2 - Vacuum processing equipment stage - Google Patents

Description

The present invention relates to a stage for a vacuum processing device, and more specifically, to a stage that can responsively change the temperature of the holding surface of a substrate to be processed and adjust the temperature of the substrate to be processed as quickly as possible through heat exchange.

In the manufacturing process of organic EL elements and semiconductor elements, vacuum processing equipment is widely used to perform various vacuum processes such as film formation, heat treatment, and etching in a vacuum atmosphere on a substrate to be processed (hereinafter simply referred to as "substrate") such as a glass substrate or a silicon wafer. For example, in the manufacturing process of organic EL elements, a vacuum deposition apparatus equipped with a vacuum chamber, a deposition source installed in the vacuum chamber, and a stage for holding the substrate is used to vaporize or sublimate an organic material (deposition material) in a vacuum chamber in a vacuum atmosphere, and the vaporized or sublimated organic material is attached and deposited on the surface of the substrate held by the stage to form a predetermined organic film. Here, it is known that the orientation (orientation) of the organic material (organic molecules) changes depending on the temperature of the substrate during the formation of the organic film. For this reason, in order to form an organic film with the desired orientation that determines the device characteristics, it is necessary to adjust the temperature of the substrate, which receives heat from the deposition source, as quickly as possible, and for this, it is important to change the temperature of the stage (its holding surface) with good responsiveness.

As a stage for such a vacuum treatment device, one using a thermoelectric element such as a Peltier element has been known in the past (see, for example, Patent Document 1). This stage includes a temperature control plate (mounting plate) against which one side of the substrate abuts, a heat exchange plate (heat exchange plate) having a flow path for cooling water constituting a cooling means, and a thermoelectric module sandwiched between the temperature control plate and the heat exchange plate. A protective member is provided on the part of the thermoelectric module on the temperature control plate side, and the outer periphery side of the thermoelectric module is surrounded by a sealing wall disposed between the protective member and the heat exchange plate, and the sealing wall and the protective member are bonded using an adhesive sheet or adhesive. The thermoelectric module has a pair of electrodes, a P-type thermoelectric element and an N-type thermoelectric element sandwiched in a state of being connected in series between the two electrodes, and a pair of support plates on which the electrodes are formed and which are in surface contact with the temperature control plate and the heat exchange plate, respectively, one of the support plates being a heat absorbing surface and the other being a heat releasing surface (see, for example, Patent Document 2). Typically, multiple thermoelectric modules are arranged side by side on the same plane according to the area of the temperature control plate and heat exchange plate, which are set according to the substrate size.

Here, if the space inside the seal wall where the thermoelectric module is present between the temperature control plate and the heat exchange plate is at atmospheric pressure, convection will cause insufficient insulation between the temperature control plate and the heat exchange plate (in other words, heat leakage will occur). For this reason, even if an attempt is made to lower the temperature of the temperature control plate in order to lower the temperature of a substrate with heat input, the temperature of the temperature control plate will not be lowered responsively, and it will take a long time to make the substrate reach the target temperature. In addition, during vacuum processing, the pressure in the vacuum chamber in which the stage is present is maintained within a predetermined range (1×10 ⁻⁴ Pa to 1×10 ⁻² Pa). For this reason, the thickness of the temperature control plate and the heat exchange plate are designed so that they will not deform due to a pressure difference, but if the thickness of the temperature control plate and the heat exchange plate becomes thicker, the heat capacity will increase, which will cause a further deterioration in responsiveness when adjusting the temperature of the temperature control plate.

JP 2013-102135 A JP 2002-111081 A

In view of the above, the present invention aims to provide a stage for a vacuum processing device that can change the temperature of the holding surface of the substrate to be processed with good responsiveness and adjust the temperature of the substrate to be processed as quickly as possible through heat exchange.

In order to solve the above problems, the stage for the vacuum processing apparatus of the present invention, which is provided in the vacuum chamber of the vacuum processing apparatus that performs vacuum processing on the substrate to be processed in a vacuum atmosphere, and on which the substrate to be processed is placed, comprises a temperature control plate against which one side of the substrate to be processed abuts, a heat exchange plate having a cooling means, a thermoelectric module that is sandwiched between the temperature control plate and the heat exchange plate, and fastening bolts that fasten the temperature control plate and the heat exchange plate while sandwiching the thermoelectric module, a vacuum seal is provided between the temperature control plate and the heat exchange plate so as to surround the thermoelectric module, and the space inside the vacuum seal is made into a vacuum atmosphere with a higher pressure than inside the vacuum chamber.

According to the present invention, the space inside the vacuum seal where the thermoelectric module is present is a vacuum atmosphere with a pressure lower than atmospheric pressure, so that the temperature control plate and the heat exchange plate are vacuum insulated. In addition, since the pressure difference with the pressure inside the vacuum chamber during vacuum processing is small, the temperature control plate and the heat exchange plate can be made thinner and have a smaller heat capacity than the above-mentioned conventional example. As a result, for example, when the temperature of the temperature control plate is to be lowered in order to lower the temperature of a substrate to be processed that has heat input during vacuum processing in the vacuum chamber, the temperature of the temperature control plate can be lowered (adjusted) with good responsiveness, and the substrate can reach the target temperature in a short time. Moreover, since the space inside the vacuum seal where the thermoelectric module is present is isolated from the atmosphere inside the vacuum chamber, the thermoelectric module can be protected from plasma and corrosive gases such as fluorine used during vacuum processing. In the present invention, the pressure in the space inside the vacuum seal is preferably set to be equal to or higher than the pressure in the vacuum chamber during vacuum processing (for example, a pressure one order of magnitude higher than the pressure in the vacuum chamber during vacuum processing, specifically, in the range of 1×10 ⁻³ Pa to 1× ⁻¹ Pa). In addition, in a structure in which a thermoelectric module is sandwiched between a temperature control plate and a heat exchange plate, heat exchange by radiation (or radiation) also occurs between the temperature control plate and the heat exchange plate. For this reason, if a low-emissivity layer is formed on the surface of the heat exchange plate facing the temperature control plate by, for example, mirror finishing with a predetermined average roughness Ra or by depositing a metal layer such as aluminum, gold, or copper, or if a member having a low-emissivity layer is placed in the space around the thermoelectric module between the temperature control plate and the heat exchange plate, heat exchange by radiation (or radiation) between the temperature control plate and the heat exchange plate can be advantageously suppressed.

In addition, in the present invention, when the thermoelectric module has a pair of electrodes, a P-type thermoelectric element and an N-type thermoelectric element sandwiched between the two electrodes in a state of being connected in series, and a pair of support plates on which each electrode is formed and which are in surface contact with the temperature control plate and the heat exchange plate, respectively, and one of the support plates is a heat absorbing surface and the other is a heat dissipating surface, a configuration can be adopted in which a sheet member that reduces contact resistance is interposed between the temperature control plate and one of the support plates. This allows the temperature control plate and one of the support plates to be in constant surface contact, allowing the temperature of the temperature control plate to be responsively adjusted. Metal foil with high thermal conductivity, such as copper, aluminum, or indium, can be used as the sheet member.

In the structure in which the thermoelectric module is sandwiched between the temperature control plate and the heat exchange plate and fixed with the fastening bolt, heat exchange also occurs between the temperature control plate and the heat exchange plate by heat transfer through the fastening bolt. In the present invention, when the fastening bolt has a head and a shaft, a stepped hole through which the shaft of the fastening bolt is inserted is opened in one of the temperature control plate and the heat exchange plate, a boss part to which the shaft part of the fastening bolt is fastened is provided on the surface of the other of the temperature control plate and the heat exchange plate on the side of the space, and a heat insulating member that also serves as a vacuum seal is interposed between the head of the fastening bolt and the step part of the stepped hole. This suppresses heat exchange through the fastening bolt as much as possible, making it possible to adjust the temperature of the temperature control plate with even better responsiveness, and by providing the boss part, it is possible to increase the mechanical strength of the temperature control plate or the heat exchange plate even if the plate thickness is reduced. The boss portion may be integrated with the temperature control plate or heat exchange plate, or may be provided separately from a material with high thermal conductivity, such as alumina, to further suppress heat transfer through the fastening bolts.

In the present invention, a configuration can be adopted in which a coil spring is further provided between the head of the fastening bolt and the boss portion, so that a constant spring load is applied to the fastening bolt, thereby maintaining the tightening torque of the fastening bolt within an appropriate range.

FIG. 1 is a cross-sectional view illustrating a vacuum deposition apparatus having a stage according to an embodiment of the present invention. FIG. 2 is a plan view of the stage shown in FIG. 1 with its heat exchanger plate removed; FIG. 2 is an enlarged cross-sectional view of a portion of the stage shown in FIG. 1 .

Below, with reference to the drawings, an embodiment of a stage for the vacuum deposition device Vm of the present invention will be described, in which the substrate to be processed is a silicon wafer (hereinafter referred to as "substrate Sw"), the vacuum processing device is a vacuum deposition device Vm that deposits a predetermined thin film on one side of the substrate Sw by vacuum deposition, and the thermoelectric module is a Peltier module. In the following, terms indicating directions such as up and down are based on Figure 1, which shows the installation position of the vacuum deposition device Vm.

Referring to FIG. 1, the vacuum deposition apparatus Vm includes a vacuum chamber 1, and although not shown or described, a vacuum pump is connected to the vacuum chamber 1 via an exhaust pipe, and the vacuum chamber 1 can be evacuated to a predetermined pressure to form a vacuum atmosphere (the ultimate pressure before the start of film formation is 1×10 ⁻⁵ Pa). An evaporation source 2 is provided on the lower surface of the vacuum chamber 1. The evaporation source 2 has a crucible 22 that contains a solid evaporation material 21. The evaporation material 21 is appropriately selected according to the thin film to be formed on the substrate Sw, and a metal or an organic material is used. The crucible 22 has a bottomed cylindrical outline with an opening on the vertical upper surface, and is made of a material with good thermal conductivity and a high melting point, such as molybdenum, titanium, stainless steel, or carbon, and can be filled with the evaporation material 21 from the opening on the upper surface. Around the crucible 22, a heating means 23 consisting of a known device such as a sheath heater or a lamp heater is provided, and the deposition material 21 contained in the crucible 22 can be heated and vaporized or sublimated (the pressure during film formation is usually 1×10 ⁻⁴ Pa to 1×10 ⁻² Pa). Note that since any known device including a so-called line source can be used as the deposition source 2, further explanation will be omitted. A stage ST of this embodiment is provided on the upper surface inside the vacuum chamber 1 so as to face the deposition source 2.

2 and 3, the stage ST includes a temperature control plate 3 against which one surface of the substrate Sw (the surface facing away from the deposition surface Sw1) abuts, a heat exchange plate 4 having a heating/cooling means, a plurality of Peltier modules 5 as thermoelectric modules sandwiched between the temperature control plate 3 and the heat exchange plate 4, and fastening bolts 6 for fastening the temperature control plate 3 and the heat exchange plate 4 while the Peltier modules 5 are sandwiched. The temperature control plate 3 has a circular outline corresponding to the substrate Sw and is made of a material with high thermal conductivity, for example, a plate material made of an aluminum alloy, and a plurality of bosses 31 are provided at predetermined positions on the upper surface of the temperature control plate 3 so as to protrude upward. Each boss 31 is provided at equal intervals in the circumferential direction so as to surround each Peltier module 5 when the Peltier modules 5 are placed on the temperature control plate 3 as described later, that is, on a virtual circumference concentric with each Peltier module 5. In this case, each boss portion 31 can be formed integrally with the temperature control plate 3, but it is also possible to provide a separate boss portion made of a material with a lower thermal conductivity than the temperature control plate 3, such as alumina. By providing multiple boss portions 31 in this way, each boss portion 31 acts as a reinforcing rib, and the mechanical strength of the temperature control plate 3 can be increased even if the plate thickness of the temperature control plate 3 is reduced.

A protrusion 32 is formed on the outer periphery of the upper surface of the temperature control plate 3, and a groove 33 is formed on the upper surface of the protrusion 32 into which an O-ring 7 is pressed as a vacuum seal. When the temperature control plate 3 and the heat exchange plate 4 are assembled with each Peltier module 5 sandwiched between them, the space Sp1 inside the O-ring 7 in which each Peltier module 5 exists between the temperature control plate 3 and the heat exchange plate 4 is substantially airtight. The O-ring 7 is made of a material with a relatively low thermal conductivity, such as silicone rubber or fluoro-rubber. A clamp 34 is provided at a predetermined position on the lower surface of the temperature control plate 3, and the clamp 34 presses the outer periphery of the substrate Sw toward the lower surface of the temperature control plate 3, thereby holding the substrate Sw in a state of surface contact over its entire surface. Note that a known clamp 34 can be used to hold the substrate Sw in this way, so further explanation will be omitted. Also, instead of the clamp 34, a so-called electrostatic chuck can be provided to electrostatically adsorb the substrate Sw.

The heat exchange plate 4 is made of a material having a higher thermal conductivity than the temperature control plate 3, such as a plate made of Cu or aluminum, and is attached to the inside of the upper surface of the vacuum chamber 1 via a resin insulating plate Ip. The heat exchange plate 4 is positioned directly above the boss portion 31 when the temperature control plate 3 and the heat exchange plate 4 are aligned in phase and faced each other, and has a stepped hole 41 that penetrates in the plate thickness direction and has a large diameter hole portion 41a and a small diameter hole portion 41b connected to each other. In addition, an exhaust hole 42 that penetrates in the plate thickness direction is provided at a predetermined position of the heat exchange plate 4, and a joint portion 43 with a closing function is provided at the end of the exhaust hole 42 that reaches the upper surface of the heat exchange plate 4, and an exhaust pipe 43a from a vacuum pump not shown in the figure can be connected when the space Sp1 inside the O-ring 7 is made into a vacuum atmosphere of a predetermined pressure lower than atmospheric pressure. A coolant circulation path 44 is also formed within the heat exchange plate 4, and a pipe 44a is connected from a chiller unit (not shown) installed outside the vacuum chamber 1, so that, for example, room temperature cooling water can be circulated to cool the heat exchange plate 4 itself. Furthermore, a low-emissivity layer 45 is formed on the lower surface of the heat exchange plate 4 (the surface facing the temperature control plate 3). The low-emissivity layer 45 is formed, for example, by mirror finishing with a predetermined average roughness Ra, or by depositing a metal layer such as aluminum, gold, or copper. In this case, a member with a low-emissivity layer may be placed at a predetermined position in the space Sp1.

Each Peltier module 5 has a pair of support plates 51a, 51b, each having a square outline and in surface contact with the temperature control plate 3 and the heat exchange plate 4, and a plurality of electrode layers 52a, 52b are formed at intervals on the opposing surfaces of the support plates 51a, 51b. A plurality of P-type thermoelectric elements 53a and N-type thermoelectric elements 53b are sandwiched between the two electrode layers 52a, 52b. In this case, the P-type thermoelectric elements 53a and the N-type thermoelectric elements 53b are connected in series to each electrode layer 52a, 52b, and when electricity is applied to the P-type thermoelectric elements 53a and the N-type thermoelectric elements 53b from a DC power source not shown in the figure, the pair of support plates 51a, 51b become heat absorption surfaces and heat dissipation surfaces, respectively, depending on the direction of the current. In addition, a spacer 54 having thermal insulation properties is provided between the pair of support plates 51a, 51b so as to surround the periphery of the P-type thermoelectric element 53a and the N-type thermoelectric element 53b, and the space Sp2 in which the P-type thermoelectric element 53a and the N-type thermoelectric element 53b are provided is sealed with a resin film (not shown). Note that since a known Peltier module can be used as the Peltier module 5, further explanation is omitted.

The fastening bolt 6 is made of a material with low thermal conductivity, such as alumina, and is composed of a head 61 that contacts the flat step 41c of the stepped hole 41 and sinks into the large diameter hole 41a, and a shaft 62 that can be freely inserted into the small diameter hole 41b, and the tip of the shaft 62 can be fastened to the boss 31. In addition, an annular groove 63 is formed on the outer periphery of the lower surface of the head 61 of the fastening bolt 6, and an O-ring 64 that serves both as a vacuum seal and a heat insulating member is pressed into the groove 63. Silicone rubber, fluorine-based rubber, or the like is used as the O-ring 64. The assembly of the stage ST is described below.

When assembling the stage ST, the temperature control plate 3 is placed in a position in which the surface on which the clamp 34 is provided faces downward. At this time, an O-ring 7 is previously pressed into the groove 33 on the upper surface of the protrusion 32. In addition, a sheet member 81 that reduces the contact resistance between the temperature control plate 3 and one of the support plates 51b may be set on the upper surface of the temperature control plate 3. Metal foil with high thermal conductivity such as copper, aluminum, or indium can be used as the sheet member 81. Then, on the temperature control plate 3, each Peltier module 5 is arranged in parallel inside the four boss parts 31 located inside the O-ring 7 and on the same virtual circumference (see FIG. 2). After that, the heat exchange plate 4 is placed facing the temperature control plate 3 with the large diameter hole part 41a side of the stepped hole 41 facing up in phase with the temperature control plate 3. At this time, the boss part 31 is positioned directly below each stepped hole 41.

Next, the coil spring 82 is inserted from above the stepped hole 41 so as to be supported by the upper surface of the boss portion 31, and the fastening bolt 6 is inserted with its shaft portion 62 side facing down and fastened to the boss portion 31 with a predetermined fastening torque. As a result, the O-ring 7 is pressed against the lower surface of the heat exchange plate 4, and the space Sp1 inside the O-ring 7 in which each Peltier module 5 is present is substantially sealed. A material with low thermal conductivity, for example, alumina, is used as the coil spring 82. Next, an exhaust pipe 43a from a vacuum pump (not shown) is connected to the joint portion 43 of the heat exchange plate 4, and the vacuum pump is operated to evacuate the space Sp1. In this case, the pressure in the space Sp1 is set to be equal to or higher than the pressure in the vacuum chamber 1 during the vacuum processing (for example, a pressure one order of magnitude higher than the pressure in the vacuum chamber 1 during the vacuum processing, specifically, in the range of 1×10 ⁻³ Pa to 1×10 ⁻¹ Pa). Finally, after closing the joint portion 43, the exhaust pipe 43a is removed. In this state, the vacuum chamber 1 is attached to the inside of the upper surface thereof via a resin heat insulating plate Ip, and although not shown or described, wiring from a power source installed outside the vacuum chamber 1 is connected to the P-type thermoelectric element 53a and the N-type thermoelectric element 53b, and piping 44a from a chiller unit installed outside the vacuum chamber 1 is connected to the circulation path 44.

When a predetermined thin film is formed on the surface of the substrate Sw by the vacuum deposition apparatus Vm, the substrate Sw is brought into surface contact with the lower surface of the temperature control plate 3 with the film-forming surface Sw1 facing downward, and then the outer peripheral edge of the substrate Sw is pressed toward the lower surface of the temperature control plate 3 by the clamp 34 to hold the substrate Sw in surface contact over its entire surface. Then, when the inside of the vacuum chamber 1 is evacuated to a predetermined pressure, the heating means 23 is operated to vaporize or sublimate the deposition material 21 in the vacuum atmosphere of the vacuum chamber 1. As a result, the vaporized or sublimated deposition material 21 adheres to and accumulates on the film-forming surface Sw1 of the substrate Sw to form a predetermined organic film. Here, for example, during film formation, the substrate Sw receives heat due to radiation from the deposition source 2. In such a case, the surface temperature of the substrate Sw is measured, for example, by a radiation thermometer (not shown) installed in the vacuum chamber 1, and the temperature control plate 3 is cooled by passing current from a DC power source to the P-type thermoelectric element 53a and the N-type thermoelectric element 53b so that the support plate 51a in close contact with the temperature control plate 3 serves as a heat dissipation surface, according to the measured value. The substrate Sw is cooled by heat exchange with the temperature control plate 3, and the surface temperature of the substrate Sw is maintained constant.

According to the above embodiment, the space Sp1 surrounded by the O-ring 7 in which each Peltier module 5 exists is made into a vacuum atmosphere, so that vacuum insulation is performed between the temperature control plate 3 and the heat exchange plate 4. In addition, since the pressure difference with the pressure in the vacuum chamber 1 during vacuum processing is small, the temperature control plate 3 and the heat exchange plate 4 can be made thinner and have a smaller heat capacity than the above conventional example. As a result, for example, when attempting to lower the temperature of the temperature control plate 3 in order to lower the temperature of the substrate Sw during film formation, the low emissivity layer 45 is formed on the surface of the heat exchange plate 4 facing the temperature control plate 3, and heat exchange via the fastening bolts 6 is suppressed as much as possible, so that the temperature of the temperature control plate 3 can be lowered with good responsiveness, and the substrate Sw can reach the target temperature in a short time. Moreover, since the space Sp1 is isolated from the atmosphere in the vacuum chamber 1, even if plasma or corrosive gas such as fluorine is used during vacuum processing, each Peltier module 5 is protected, which is advantageous. Furthermore, by providing the sheet member 81, the temperature control plate 3 and one of the support plates 51a are constantly in surface contact with each other, enabling responsive temperature control of the temperature control plate 3. Moreover, by applying a constant spring load to the fastening bolt 6 by the coil spring 82, the tightening torque of the fastening bolt 6 can be maintained within an appropriate range.

Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications are possible without departing from the spirit of the present invention. In the above embodiment, a vacuum deposition apparatus Vm is used as an example of a vacuum processing apparatus, but the present invention can be applied to other apparatuses such as sputtering apparatuses and etching apparatuses as long as it is necessary to adjust the temperature of the substrate Sw to a predetermined temperature during vacuum processing. In the above embodiment, a Peltier module 5 is used as an example of a thermoelectric module, but the present invention is not limited to this, and can be applied to, for example, an apparatus that utilizes the Thomson effect.

In the above embodiment, the space Sp1 surrounded by the O-ring 7 in which each Peltier module 5 is present is evacuated in advance when assembling the stage ST, and a vacuum atmosphere with a higher pressure than that in the vacuum chamber 1 is maintained. However, this is not limited to the above, and for example, the space Sp1 can be evacuated as the vacuum chamber 1 is evacuated, and maintained at a pressure, for example, one order of magnitude higher than that in the vacuum chamber 1. In such a case, the diameter of the exhaust hole 42 that determines the conductance between the vacuum chamber 1 and the space Sp1 or the number of exhaust holes 42 formed can be appropriately set, or an extension tube (not shown) of a predetermined length can be connected to the end face of the exhaust hole 42 with a predetermined diameter on the vacuum chamber 1 side.

ST...stage, Sp1...space inside the vacuum seal, Sw...substrate (substrate to be processed), Vm...vacuum deposition device (vacuum processing device), 1...vacuum chamber, 3...temperature control plate, 31...boss portion, 4...heat exchange plate, 41...step hole, 41c...step portion, 5...peltier module (thermoelectric module), 51a, 51b...support plate, 52a...electrode layer (electrode), 53a...p-type thermoelectric element, 53b...n-type thermoelectric element, 6...fastening bolt, 61...head, 62...shaft portion, 64...insulating member, 7...O-ring (vacuum seal), 81...sheet member, 82...coil spring.

Claims (4)

A stage for a vacuum processing apparatus, which is provided in a vacuum chamber of the vacuum processing apparatus for performing vacuum processing on a substrate to be processed in a vacuum atmosphere, and on which a substrate to be processed is placed, comprising:
A processing apparatus comprising a temperature control plate against which one surface of a substrate to be processed abuts, a heat exchange plate having a cooling means, a thermoelectric module sandwiched between the temperature control plate and the heat exchange plate, and fastening bolts for fastening the temperature control plate and the heat exchange plate together while sandwiching the thermoelectric module,
A stage for a vacuum processing apparatus, characterized in that a vacuum seal is provided between a temperature control plate and a heat exchange plate so as to surround a thermoelectric module, and the space inside the vacuum seal is made into a vacuum atmosphere with a higher pressure than that inside a vacuum chamber. 2. The stage for a vacuum processing apparatus according to claim 1,
The thermoelectric module has a pair of electrodes, a P-type thermoelectric element and an N-type thermoelectric element sandwiched between the electrodes in a state of being connected in series, and a pair of support plates on which the electrodes are respectively formed and which are in surface contact with the temperature control plate and the heat exchange plate, one of the support plates being a heat absorbing surface and the other being a heat radiating surface,
1. A stage for a vacuum processing apparatus, comprising: a sheet member for reducing contact resistance interposed between a temperature control plate and one of the support plates. 3. The stage for a vacuum processing apparatus according to claim 1, wherein the fastening bolt has a head and a shaft,
A stepped hole through which a shank of a fastening bolt is inserted is provided in one of the temperature control plate and the heat exchange plate, and a boss portion to which the shank of the fastening bolt is fastened is provided on a surface of the other of the temperature control plate and the heat exchange plate facing the space,
1. A stage for a vacuum processing apparatus, further comprising a heat insulating member that also serves as a vacuum seal and is interposed between a head of a fastening bolt and a step of a stepped hole. The stage for a vacuum processing device according to claim 3, further comprising a coil spring compressed between the head of the fastening bolt and the boss portion.

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