JP7515900B2 - Electronic Component Test Equipment - Google Patents

Description

This disclosure relates to an electronic component testing device that tests electronic components that generate self-heat by applying a voltage at a test temperature higher than room temperature.

Electronic component manufacturers test the electrical characteristics of electronic components before shipping to eliminate defective products and ship only non-defective products. In recent years in particular, in various technical fields including the automotive industry, there has been a growing demand for the characteristics of electronic components to be guaranteed with a higher degree of reliability, and there is an increasing need for test assurance under high-temperature conditions that are close to the actual usage environment. Furthermore, testing under high-temperature conditions is suitable for applying loads that accelerate the deterioration of the life span of electronic components, and is also useful as a screening method for revealing initial defects.

However, when testing the electrical characteristics of electronic components under high temperature conditions, the electronic components may heat up themselves and rise in temperature excessively. In other words, as the temperature of the electronic components rises, the current consumption of the electronic components increases. And as the current consumption of the electronic components increases, the amount of heat generated by the electronic components increases, causing the temperature of the electronic components to rise further, which in turn causes the current consumption of the electronic components to increase further, creating a vicious cycle. This vicious cycle causes electronic components that were originally classified as good products to become defective due to heat damage, reducing the yield.

The testing device disclosed in Patent Document 1 feeds back the temperature of an electronic component detected by a temperature sensor to the control of a heater that heats the electronic component, thereby regulating the temperature of the self-heating electronic component and reducing thermal damage to the electronic component.

Patent No. 5987977

However, the heater feedback control performed by the testing device of Patent Document 1 does not necessarily sufficiently suppress the amount of self-heating in electronic components, and therefore may not be able to adequately suppress temperature rise in electronic components that generate a large amount of self-heating.

Furthermore, when testing a large number of electronic components simultaneously, there may be non-negligible differences in the degree of self-heating between electronic components due to individual differences between the electronic components. To deal with such a situation with the test device of Patent Document 1, a set of temperature sensors, heaters, and feedback control devices required for temperature control of each electronic component is required for each electronic component to be tested in order to individually control the temperature of each electronic component. For example, when testing 1,000 electronic components simultaneously with the test device of Patent Document 1, 1,000 sets of independent control systems (temperature sensors, heaters, and control devices) are required.

Furthermore, in the test device of Patent Document 1, if there is thermal interaction between the electronic components being tested, feedback temperature control for each electronic component will not be possible. Therefore, in the test device of Patent Document 1, multiple electronic components being tested cannot be packed closely together, and it is necessary to provide an appropriate spacing between the electronic components to prevent thermal interaction between the electronic components. Therefore, in the test device of Patent Document 1, the required installation area becomes significantly larger as the number of electronic components being tested simultaneously increases.

As described above, the test device of Patent Document 1 increases the number of electronic components to be tested simultaneously, which results in a more complex and larger device configuration, and therefore higher device costs, and may not be able to meet the needs in terms of economy and area productivity.

The present disclosure has been made in consideration of the above circumstances, and provides an electronic component testing device that can properly test electronic components while preventing excessive temperature rise in the electronic components that generate self-heat, and that can handle testing of multiple electronic components with a low-cost, compact device configuration.

One aspect of the present disclosure relates to an electronic device testing device that applies a voltage to an electronic device that generates self-heating at a test temperature higher than room temperature, the electronic device testing device comprising: a voltage application unit that applies a voltage to the electronic device; a current measurement unit that measures a current in the electronic device; and a control unit that adjusts the voltage applied to the electronic device by controlling the voltage application unit according to a measurement result of the leakage current of the current measurement unit in light of a correlation between the leakage current in the electronic device and the temperature of the electronic device that is obtained in advance.

When the leakage current measurement value of the current measurement unit exceeds a thermal runaway determination threshold determined according to the correlation, the control unit may initiate a steady state return process on the voltage application unit to adjust the voltage applied to the electronic component so as to lower the temperature of the electronic component.

The control unit may terminate the steady-state return process for the voltage application unit when the leakage current measurement value of the current measurement unit falls below a steady-state determination threshold determined according to the correlation.

The control unit may control the voltage application unit to adjust the current flow time during which the voltage application unit applies voltage to the electronic component during the steady state return process.

The control unit may control the voltage application unit to adjust the magnitude of the voltage that the voltage application unit applies to the electronic component during the steady state return process.

The voltage application unit applies a voltage to the multiple electronic components, the current measurement unit measures the current in the multiple electronic components, and the correlation is a correlation between the leakage current in each of the multiple electronic components and the temperature of each of the multiple electronic components. The control unit may adjust the voltage applied to the multiple electronic components by controlling the voltage application unit in accordance with the measurement results of the leakage current by the current measurement unit in light of the correlation.

According to the present disclosure, it is possible to properly test electronic components while preventing excessive temperature rise in the electronic components that generate self-heat, and it is possible to test multiple electronic components with a low-cost, compact device configuration.

FIG. 1 is a diagram showing an example of the correlation between the current consumption and the work temperature of a multilayer ceramic capacitor. FIG. 2 is a diagram showing an example of the correlation between leakage current and workpiece temperature in the example shown in FIG. FIG. 3 is a diagram showing an example of the configuration of an electronic device test apparatus according to the first embodiment. FIG. 4 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) and the measured currents (vertical axis) of each current measuring unit in the electronic device test method according to the first embodiment. FIG. 5 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) and the applied voltage (vertical axis) to each electronic component in the electronic device test method according to the first embodiment. FIG. 6 is a diagram showing an example of the configuration of an electronic device test apparatus according to the second embodiment. FIG. 7 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) and the measured current (vertical axis) of each current measuring unit in the electronic device test method according to the second embodiment. FIG. 8 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) and the applied voltage (vertical axis) to each electronic component in the electronic device testing method according to the second embodiment.

Figure 1 shows an example of the correlation between the current consumption of a multilayer ceramic capacitor (MLCC) and the work temperature. The horizontal axis in Figure 1 indicates time (elapsed time (seconds)) and shows the current consumption of the MLCC being measured.

Figure 1 shows correlation curves for MLCC temperatures (i.e., "work temperature") of 40°C, 70°C, 100°C, 130°C, 160°C, and 190°C.

Figure 2 is a diagram showing an example of the correlation between leakage current and work temperature in the example shown in Figure 1. The horizontal axis of Figure 2 shows leakage current, and the vertical axis shows work temperature.

The inventors applied a voltage of 125V to a sample MLCC with a capacitance of 10μF (farads), a rated voltage of 50V (volts), and temperature characteristics of X5R (Electronic Industries Alliance (EIA)) and measured the current consumption of the sample (see Figure 1).

In Figure 1, "P1" indicates the initial state after power is applied. This initial state indicates the state in which charging progresses and electricity (charge) is gradually stored in the MLCC sample. On the other hand, in Figure 1, "P2" indicates the steady state. The steady state here refers to the state in which the electronic components are fully charged. When a voltage is applied to the MLCC sample in the steady state after charging is complete, current leaks from the MLCC sample, and this leakage current (leak current) is measured as the current consumption (see the vertical axis in Figure 1).

The inventors changed the work temperature (i.e., changed the work temperature to 40°C, 70°C, 100°C, 130°C, 160°C, and 190°C) and measured the above-mentioned current consumption for each work temperature.

As a result, as shown in Figure 2, it was confirmed that there is a linear relationship (proportional relationship) between the magnitude of the leakage current and the work temperature. The inventors measured the above-mentioned current consumption while changing various conditions (e.g., capacitance, rated voltage, and applied voltage), and in every measurement, a linear relationship (proportional relationship) was found between the magnitude of the leakage current and the work temperature.

In light of the correlation (linear relationship) between the magnitude of leakage current and the workpiece temperature, it is possible to estimate and understand the workpiece temperature from the leakage current.

Each embodiment of the electronic component testing device and electronic component testing method described below is based on this correlation (linear relationship) between leakage current and work temperature. In each of the following embodiments, multiple electronic components are tested simultaneously, and each voltage application unit is controlled and the voltage applied to each electronic component is adjusted in light of the correlation between the leakage current in each of the multiple electronic components and the temperature of each of the multiple electronic components.

[First embodiment]
FIG. 3 is a diagram showing an example of the configuration of an electronic device test apparatus 10 according to the first embodiment.

The electronic device testing device 10 shown in FIG. 3 simultaneously applies a voltage to multiple self-heating electronic components W (e.g., 200 to 1000 electronic components W) and tests each electronic component W at a test temperature higher than room temperature. During the test, the temperature of each electronic component W rises due to self-heating, and even if the desired test temperature is, for example, 150°C, the temperature of each electronic component W can vary within a temperature range of 100°C to 170°C.

The specific test contents performed by the electronic device test apparatus 10 are not limited. For example, a test may be performed in which an electrical load is applied while a thermal load is applied to each electronic component W, or a test may be performed in which electrical measurements are performed while a thermal load and an electrical load are applied to each electronic component W. More specifically, the electronic device test apparatus 10 may perform electrical tests such as screening tests such as burn-in, withstand voltage tests, capacitance tests, insulation resistance tests, and leakage current tests.

In this example, an MLCC (multilayer ceramic capacitor) is used as the electronic component W, but the electronic component W that can be tested by the electronic component test device 10 is not limited. For example, semiconductor elements such as negative characteristic thermistors, diodes, and transistors, or parts of capacitors other than ceramic capacitors, can be used as the electronic component W, and any other electronic device may be used as the electronic component W.

Each electronic component W has an electronic component body and a first external electrode and a second external electrode attached to the electronic component body.

The electronic device test device 10 includes a power supply unit 20, a plurality of first probes 21 connected to the power supply unit 20 via first wiring 31, and a plurality of second probes 22 connected to the power supply unit 20 via second wiring 32.

In this example, the power supply unit 20 is configured with a DC power supply device and can provide each electronic component W with a voltage greater than the rated voltage (e.g., a DC voltage 2.5 times the rated voltage). The configuration of the power supply unit 20 is not limited. The power supply unit 20 may be configured with, for example, an AC power supply device, or may be configured with a power supply device that can selectively provide DC (DC current and DC voltage) and AC (AC current and AC voltage) to each electronic component W.

The multiple first probes 21 are supported by a single first probe holder 23 and are connected to the first external electrodes of the multiple electronic components W. The multiple second probes 22 are supported by a single second probe holder 24 and are connected to the second external electrodes of the multiple electronic components W. In this way, the first probes 21 and the second probes 22 function as paired electrodes (pin-shaped conductors), and the same number of pairs of first probes 21 and second probes 22 are provided as the number of electronic components W that can be tested simultaneously.

Each of the first probes 21 and each of the second probes 22 has a probe element that is intended to come into direct contact with the electronic component W. This probe element may have any shape capable of establishing a good electrical connection with the electronic component W, and may be, for example, made of a strip-shaped conductor (e.g., a metal body such as Cu, Fe, or Al) or may be plated with a conductor (e.g., a metal plating such as Au, Ag, Ni, or Sn).

The first probe holder 23 and the second probe holder 24 are made of a non-conductive material (e.g., a material such as machinable ceramics). At least one of the first probe holder 23 and the second probe holder 24 is provided so as to be movable under the control of the control unit 13. The first probes 21 and/or the second probes 22 can move together with the corresponding holder to be positioned at a test position where they contact the electronic components W to be tested and at a retracted position away from the electronic components W to be tested.

The first probe holder 23 and the second probe holder 24 are provided with a first heater 25 and a second heater 26 (e.g., a rubber heater), respectively. The first heater 25 and the second heater 26 adjust the temperature (test temperature) of the electronic component W to be tested. That is, the thermal energy from the first heater 25 and the second heater 26 is transmitted to each electronic component W via each first probe 21 and each second probe 22, and each electronic component W is heated and adjusted to the desired test temperature. The first heater 25 and the second heater 26 may be driven under the control of the control unit 13, or may be driven without the control unit 13 (e.g., manually).

The driving temperatures of the first heater 25 and the second heater 26 may be the same or different from each other. In particular, one of the first heater 25 and the second heater 26 may generate heat to adjust the temperature of the electronic component W to a temperature (e.g., 153°C) higher than the desired test temperature (e.g., 150°C), and the other may generate heat to adjust the temperature of the electronic component W to a temperature (e.g., 147°C) lower than the desired test temperature. In this case, the first probe 21, the second probe 22, and the electronic component W are placed in a state in which heat transfer occurs from one probe to the electronic component W and from the electronic component W to the other probe. Therefore, the test can be performed in a state in which the thermal responsiveness of the first probe 21, the electronic component W, and the second probe 22 is high.

As an example, the heat generated by the first heater 25 and the second heater 26 may be controlled so that the temperature difference between the first probe 21 and the second probe 22 is between 5°C and 15°C. If the temperature difference between the first probe 21 and the second probe 22 is less than 5°C, heat dissipation from the electronic component W may not be performed properly. On the other hand, if the temperature difference between the first probe 21 and the second probe 22 is greater than 15°C, it may become difficult to control the temperature of the electronic component W.

A voltage application unit 11 and a current measurement unit 12 are provided on the second wiring 32 extending between each second probe 22 and the power supply unit 20, and each voltage application unit 11 and each current measurement unit 12 are connected to the control unit 13.

Each current measurement unit 12 repeatedly measures the current flowing through the corresponding second wiring 32 (and thus the current in the corresponding electronic component W) and transmits the measurement results to the control unit 13. The frequency of measurement by each current measurement unit 12 is not limited, and each current measurement unit 12 may perform current measurement and transmit the measurement results to the control unit 13, for example, every 100 ms. Each voltage application unit 11 applies a voltage to the corresponding electronic component W. The voltage application unit 11 in this embodiment is configured as a switching element that turns on (passes current) and off (cuts current) the current in the corresponding second wiring 32 based on the measurement results of the corresponding current measurement unit 12 under the control of the control unit 13.

The control unit 13 adjusts the voltage applied to the electronic component W by controlling the corresponding voltage application unit 11 according to the measurement result of the leakage current by the current measurement unit 12 in light of the correlation between the leakage current in the electronic component W and the temperature (work temperature) of the electronic component W that has been acquired in advance.

The control unit 13 of this embodiment includes a digital circuit capable of performing PWM control (pulse width modulation control) and adjusts the voltage applied to the electronic component W based on the PWM control. That is, the control unit 13 controls the corresponding voltage application unit 11 so as to adjust the current application time for which the corresponding voltage application unit 11 applies a voltage to the corresponding electronic component W based on the measured value of the leakage current acquired by the current measurement unit 12. A specific example of PWM control will be described later (see FIG. 5).

Next, an example of an electronic device testing method performed by the electronic device testing device 10 having the above-described configuration will be described.

Figure 4 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) in the electronic device testing method of the first embodiment and the measured current (vertical axis) of each current measuring unit 12. Figure 5 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) in the electronic device testing method of the first embodiment and the applied voltage (vertical axis) to each electronic device W.

The electronic components W to be tested are in contact with the corresponding first probes 21 and second probes 22, and electricity flows through the corresponding first probes 21 and second probes 22. At this time, the electronic components W to be tested are heated by thermal energy from the first heater 25 and the second heater 26, and the temperature (test temperature) of these electronic components W is adjusted to, for example, 150°C.

Specifically, under the control of the control unit 13, each voltage application unit 11 is adjusted to the on state, and power is supplied from the power supply unit 20 to each electronic component W (see "Initial power supply" in Figure 4). As a result, charging of each electronic component W progresses, and the measured current value acquired by each current measurement unit 12 gradually decreases.

Then, each electronic component W is fully charged and reaches a steady state (see "Steady State" in Figure 4).

By continuing to apply a voltage to each electronic component W in the steady state, a leakage current occurs in each electronic component W. The leakage current is acquired as a measured current by the corresponding current measuring unit 12.

When a voltage is continuously applied to a self-heating electronic component W in a steady state, the component generates heat and its temperature rises, which can cause what is known as thermal runaway (see "Initial stage of thermal runaway" in Figure 4). In particular, when an MLCC is used as the electronic component W, the MLCC is often charged with a high current to shorten the charging time, but in such cases, the test temperature is inevitably high, making the electronic component W prone to thermal runaway. An electronic component W that has experienced thermal runaway will heat up at an accelerating rate over time, and will be destroyed if it exceeds its heat-resistant temperature (see "Thermal destruction" in Figure 4).

In this embodiment, when the control unit 13 detects that the measurement result of the current measurement unit 12 has reached the thermal runaway judgment threshold T1, it individually starts a steady state return process for the corresponding electronic component W (see "thermal runaway detection" in Figures 4 and 5). In other words, when the measurement value of the leakage current of the current measurement unit 12 exceeds the thermal runaway judgment threshold T1 determined according to the above-mentioned correlation, the control unit 13 starts a steady state return process for the corresponding voltage application unit 11, which adjusts the voltage applied to the corresponding electronic component W so as to lower the temperature of the corresponding electronic component W.

As shown in FIG. 2 above, there is a strong positive correlation between the leakage current of the electronic component W and the work temperature. In light of this correlation, by determining whether the leakage current of the electronic component W (i.e., the measurement result of the current measurement unit 12) has reached the thermal runaway judgment threshold T1, it is essentially determined whether the electronic component W has reached the "judgment threshold temperature, which is the criterion temperature for judging whether or not thermal runaway is occurring." Therefore, the "thermal runaway judgment threshold T1 for the measured current" used as the judgment criterion here corresponds to the "judgment threshold temperature for the temperature of the electronic component W."

In this way, it is possible to determine whether the temperature of each electronic component W has reached the "threshold temperature for determining whether or not thermal runaway is occurring" without directly measuring the temperature of each electronic component W, and thus to determine whether or not thermal runaway is occurring in each electronic component W.

The steady-state return process described above, which is performed on an electronic component W experiencing thermal runaway, continues until the corresponding electronic component W returns to a steady state, and ends when the corresponding electronic component W returns to a steady state. Specifically, when the measured value of the leakage current of the current measurement unit 12 falls below the steady-state determination threshold T2 determined according to the above correlation, the control unit 13 ends the steady-state return process for the corresponding voltage application unit 11 (see "Return to steady state" in Figures 4 and 5). The "steady-state determination threshold T2 for the measured current" used here as the determination criterion corresponds to the "determination threshold temperature, which is the determination reference temperature for whether or not the electronic component W is in a normal state."

In this embodiment, the steady state return process is performed based on PWM control. That is, the control unit 13 controls the on/off drive of the corresponding voltage application unit 11 in the steady state return process, and adjusts the time during which voltage is applied to the corresponding electronic component W (on time) and the time during which voltage is not applied to the corresponding electronic component W (off time). In this way, the control unit 13 controls the corresponding voltage application unit 11 in the steady state return process, and adjusts the current flow time during which the voltage application unit 11 applies voltage to the electronic component W, thereby lowering the temperature of the electronic component W. This calms down thermal runaway of each electronic component W, and thermal destruction of each electronic component W can be avoided.

The specific method of PWM control here is not limited. As an example, as shown in FIG. 5, the control unit 13 may treat a predetermined time interval (e.g., 100 ms) as 100%, and control the corresponding voltage application unit 11 to adjust the frequency of repetition of turning on and off the voltage application to the corresponding electronic component W according to the rate of change (speed of change) of the current measured by the current measurement unit 12 (i.e., according to the rate of temperature change of the corresponding electronic component W).

In this way, even if the electronic component W experiences thermal runaway and heats up, the temperature is lowered and the electronic component returns to a steady state by the above-mentioned steady state recovery process (PWM control) before it experiences thermal destruction (i.e., before it reaches a work temperature (leakage current) that could cause thermal destruction).

While the test is being performed, voltage continues to be applied to each electronic component W. Therefore, even if each electronic component W returns to a steady state, it may experience thermal runaway again.

However, according to this embodiment, the control unit 13 continues to monitor the temperature of each electronic component W based on the measurement results of each current measurement unit 12, and the above-mentioned steady state return process (PWM control) is repeatedly applied to electronic components W experiencing thermal runaway (i.e., electronic components W whose leakage current exceeds the thermal runaway judgment threshold T1). This makes it possible to simultaneously test a large number of electronic components W while preventing thermal runaway of each electronic component W over time.

As described above, the electronic component testing device 10 and electronic component testing method of this embodiment can properly test the electronic component W while preventing an excessive temperature rise in the self-heating electronic component W.

In particular, in light of the correlation between the leakage current of each electronic component W and the work temperature, the temperature of each electronic component W can be estimated based on the measured value of the leakage current, so there is no need to directly measure the temperature of each electronic component W. Therefore, a control system (temperature sensor, heater, and control device) for measuring and controlling the temperature of each electronic component W is not required, and the device configuration of the electronic component test device 10 can be simplified.

In addition, according to the electronic component testing method of this embodiment, even if thermal interactions occur between electronic components, testing can be performed effectively while preventing thermal runaway of each electronic component W. Therefore, when testing multiple electronic components W simultaneously, it is possible to perform the testing with multiple electronic components W lined up in a limited space. In this way, this embodiment is excellent in terms of economy and area productivity, as it is possible to properly test multiple electronic components W simultaneously using the electronic component testing apparatus 10 with a low-cost and compact configuration.

Second Embodiment
In this embodiment, elements that are the same as or correspond to those in the above-described first embodiment are given the same reference numerals, and detailed description thereof will be omitted.

Figure 6 is a diagram showing an example configuration of an electronic device test device 10 according to the second embodiment.

In the first embodiment described above, the voltage applied to the electronic component W is controlled by PWM control (digital circuit), but the control unit 13 in this embodiment includes an analog circuit capable of executing regulator control, and adjusts the magnitude of the voltage applied to the electronic component W by analog control.

That is, in this embodiment, each voltage application unit 11 that applies a voltage to a corresponding electronic component W is configured as an element that can change the magnitude of the voltage applied to the corresponding electronic component W based on the measurement result of the corresponding current measurement unit 12 under the control of the control unit 13.

The control unit 13 controls the corresponding voltage application unit 11 so as to adjust the magnitude of the voltage that the corresponding voltage application unit 11 applies to the electronic component W based on the leakage current from each electronic component W, which is the measurement result of each current measurement unit 12. A specific example of regulator control will be described later (see FIG. 8).

The rest of the configuration is the same as that of the electronic device test device 10 of the first embodiment described above (see Figure 3).

Next, an example of an electronic device testing method performed by the electronic device testing device 10 having the above-described configuration will be described.

Figure 7 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) in the electronic device testing method of the second embodiment and the measured current (vertical axis) of each current measuring unit 12. Figure 8 is a diagram showing an example of the relationship between the elapsed time (horizontal axis) in the electronic device testing method of the second embodiment and the applied voltage (vertical axis) to each electronic device W.

The electronic device testing method of this embodiment is basically performed in the same manner as the electronic device testing method of the first embodiment described above.

That is, the multiple electronic components W to be tested are adjusted to the desired test temperature and tested while in contact with the corresponding first probe 21 and second probe 22 by passing electricity through them.

As a result, the charging of each electronic component W progresses, the measured current value acquired by each current measurement unit 12 gradually decreases, and the electronic component W reaches a steady state (see "Steady State" in Figure 7). Then, by continuing to apply a voltage to each electronic component W in the steady state, a leakage current flows through each electronic component W, and this leakage current is acquired as a measured current by the corresponding current measurement unit 12. The control unit 13 monitors the temperature of each electronic component W based on the measurement results of the leakage current of each electronic component W acquired in this manner.

Then, when the control unit 13 detects an electronic component W whose leakage current has reached the thermal runaway determination threshold T1 based on the measurement results of the current measurement unit 12 (see "thermal runaway detection" in Figures 7 and 8), it individually starts a steady state return process for that electronic component W. That is, in the steady state return process, the control unit 13 controls the corresponding voltage application unit 11 to adjust the magnitude of the voltage that the corresponding voltage application unit 11 applies to the electronic component W, and the voltage applied to the corresponding electronic component W is adjusted so that the temperature of the corresponding electronic component W decreases.

In this manner, in this embodiment, the steady state return process described above is performed based on regulator control, and the corresponding voltage application unit 11 is driven in an analog manner under the control of the control unit 13, thereby adjusting the magnitude of the voltage applied to the electronic component W experiencing thermal runaway.

The specific control method of the regulator control here is not limited. As an example, as shown in FIG. 8, the temperature of the corresponding electronic component W may be lowered by proportionally and continuously reducing the voltage applied to the electronic component W over time. However, the regulator control is not limited to this control method. For example, the voltage applied to the corresponding electronic component W may be exponentially reduced according to the current measurement value (i.e., the leakage current of the corresponding electronic component W) acquired by the corresponding current measurement unit 12. Alternatively, the voltage applied to the corresponding electronic component W may be reduced in stages according to the current measurement value acquired by the corresponding current measurement unit 12.

The steady state return process described above continues until the electronic component W experiencing thermal runaway returns to a steady state, and ends when the electronic component W returns to a steady state. Specifically, when the control unit 13 detects that the measurement result of the current measurement unit 12 has reached the steady state determination threshold T2, it ends the steady state return process (see "Return to steady state" in Figures 7 and 8).

The control unit 13 continues to monitor the temperature of each electronic component W based on the measurement results of each current measurement unit 12, and repeatedly applies the above-mentioned steady state return process (regulator control) to electronic components W experiencing thermal runaway (i.e., electronic components W whose leakage current exceeds the thermal runaway judgment threshold T1). This makes it possible to simultaneously test multiple electronic components W while preventing thermal runaway in each electronic component W.

As described above, in this embodiment, it is possible to properly test the electronic component W while preventing an excessive temperature rise in the electronic component W that generates heat, and it is possible to test multiple electronic components W with a low-cost and compact device configuration.

It should be noted that the embodiments and modifications disclosed in this specification are merely illustrative in all respects and should not be construed as limiting. The above-mentioned embodiments and modifications may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. Furthermore, the technical category embodying the above-mentioned technical idea is not limited. For example, the above-mentioned technical idea may be embodied by a computer program for causing a computer to execute one or more procedures (steps) included in the above-mentioned electronic component testing method. Furthermore, the above-mentioned technical idea may be embodied by a non-transitory computer-readable recording medium on which such a computer program is recorded.

REFERENCE SIGNS LIST 10 Electronic device test apparatus 11 Voltage application section 12 Current measurement section 13 Control section 20 Power supply section 21 First probe 22 Second probe 23 First probe holder 24 Second probe holder 25 First heater 26 Second heater 31 First wiring 32 Second wiring P1 Power-on initial state P2 Steady state T1 Thermal runaway judgment threshold T2 Steady-state judgment threshold W Electronic device

Claims (5)

An electronic device testing apparatus that applies a voltage to an electronic device that generates self-heating at a test temperature higher than room temperature,
A voltage application unit that applies a voltage to the electronic component;
a current measuring unit for measuring a current in the electronic component;
a control unit that adjusts a voltage applied to the electronic component by controlling the voltage application unit in accordance with a measurement result regarding the leakage current of the current measurement unit in light of a correlation between a leakage current in the electronic component and a temperature of the electronic component that is acquired in advance ,
The control unit, when a measured value of the leakage current of the current measuring unit exceeds a thermal runaway judgment threshold determined according to the correlation, initiates a steady state return process on the voltage application unit to adjust the voltage applied to the electronic component so as to lower the temperature of the electronic component . 2. The electronic device test apparatus according to claim 1 , wherein the control unit terminates the steady state return process for the voltage application unit when a measurement value relating to leakage current of the current measurement unit falls below a steady state determination threshold determined according to the correlation. 3. The electronic device test apparatus according to claim 1 , wherein the control unit controls the voltage application unit so as to adjust a current application time during which the voltage application unit applies a voltage to the electronic device in the steady state recovery process. 3. The electronic device test apparatus according to claim 1 , wherein the control unit controls the voltage application unit so as to adjust a magnitude of the voltage that the voltage application unit applies to the electronic device in the steady state recovery process. The voltage application unit applies a voltage to a plurality of electronic components,
the current measuring unit measures currents in the plurality of electronic components;
the correlation being a correlation between a leakage current in each of the plurality of electronic components and a temperature of each of the plurality of electronic components;
5. The electronic device testing apparatus according to claim 1, wherein the control unit adjusts the voltage applied to the plurality of electronic components by controlling the voltage application unit in accordance with the measurement results regarding leakage current of the current measurement unit in light of the correlation .