JP7463222B2 - 磁気カップリング装置 - Google Patents
磁気カップリング装置 Download PDFInfo
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- JP7463222B2 JP7463222B2 JP2020129000A JP2020129000A JP7463222B2 JP 7463222 B2 JP7463222 B2 JP 7463222B2 JP 2020129000 A JP2020129000 A JP 2020129000A JP 2020129000 A JP2020129000 A JP 2020129000A JP 7463222 B2 JP7463222 B2 JP 7463222B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 51
- 230000008878 coupling Effects 0.000 title claims description 29
- 238000010168 coupling process Methods 0.000 title claims description 29
- 238000005859 coupling reaction Methods 0.000 title claims description 29
- 230000007246 mechanism Effects 0.000 claims description 8
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K49/00—Dynamo-electric clutches; Dynamo-electric brakes
- H02K49/10—Dynamo-electric clutches; Dynamo-electric brakes of the permanent-magnet type
- H02K49/102—Magnetic gearings, i.e. assembly of gears, linear or rotary, by which motion is magnetically transferred without physical contact
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
- F16D27/00—Magnetically- or electrically- actuated clutches; Control or electric circuits therefor
- F16D27/01—Magnetically- or electrically- actuated clutches; Control or electric circuits therefor with permanent magnets
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K49/00—Dynamo-electric clutches; Dynamo-electric brakes
- H02K49/10—Dynamo-electric clutches; Dynamo-electric brakes of the permanent-magnet type
- H02K49/104—Magnetic couplings consisting of only two coaxial rotary elements, i.e. the driving element and the driven element
- H02K49/108—Magnetic couplings consisting of only two coaxial rotary elements, i.e. the driving element and the driven element with an axial air gap
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
- F16D27/00—Magnetically- or electrically- actuated clutches; Control or electric circuits therefor
- F16D27/14—Details
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16H—GEARING
- F16H49/00—Other gearings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Dynamo-Electric Clutches, Dynamo-Electric Brakes (AREA)
Description
環状扇形の第1永久磁石が交互に異極になるように周方向に沿って複数配列された駆動側磁石列と、
環状扇形又は扇形の第2永久磁石が交互に異極になるように周方向に沿って複数配列され、かつ、第1永久磁石の磁極面と第2永久磁石の磁極面が向かい合うように配列された従動側磁石列と、を有し、
駆動側磁石列を回転駆動させることで、従動側磁石列を従動回転させる磁気カップリング装置であって、
複数の前記第1永久磁石のうちの特定の第1永久磁石の径方向の第1中心線と、複数の前記第2永久磁石のうちの特定の第2永久磁石の径方向の第2中心線とを、異極どうしが向かい合うように重ね合わせた状態で、中心線どうしが重ねられた前記特定の第1永久磁石及び前記特定の第2永久磁石に隣接する第1永久磁石及び第2永久磁石も含めて、反発力が作用する反発領域の面積が、吸引力が作用する吸引領域の面積の5~15%になるように設定されていることを特徴とするものである。
駆動側磁石列10は、円板12の表面(上面)に多数の第1永久磁石14が周方向に沿って配列されている。図2Aは、円板12の一部を示しているが、第1永久磁石14の磁極が交互に異極になるように、すなわち、S極とN極が交互になるように配列されている。第1永久磁石14は、円板12に対してネジなどの機械的な手段により固定する。あるいは、接着剤を用いて固定してもよい。
次に、第1永久磁石14と第2永久磁石24の相対的な位置関係について説明する。図2Aにおいては、駆動側磁石列10の一部と、複数の従動側磁石列20のうちの1つのみを示している。
次に、駆動側磁石列10を回転させて従動側磁石列20を回転させるときの原理について図3を用いて説明する。図3(a)は、図2Aの状態と同じである。図3(b)は、左の状態から駆動側磁石列10を時計方向に所定の角度回転させた状態の駆動側磁石列10に対する従動側磁石列20の相対的位置関係を示している。すなわち、駆動側磁石列10を時計方向に所定の角度だけ回転させたとき、従動側磁石列20が駆動側磁石列10に対して相対的に反時計回りにθ°回転した状態になることを示している。
また、従動側磁石列20は、図5に示すように、第2永久磁石24の外周端部が第1永久磁石14の外周端部から第2永久磁石24の径方向の高さH2の0~50%だけ、駆動側磁石列10の回転中心の方向(第1永久磁石14の径方向)にずらして支持されていてもよい。これにより、駆動側磁石列10の磁石の極数と従動側磁石列20の磁石の極数を変えることなく、反発領域の面積と吸引領域の面積の比率を調整することができる。また、位置をずらすことで従動側磁石列20の追従性を改善できる可能性がある。
本発明に係る磁気カップリング装置は、主として真空成膜装置に用いられるものであるが、それ以外の用途の装置に用いられてもよい。
10 駆動側磁石列
12 円板
14,140,141 第1永久磁石
16 回転軸
20 従動側磁石列
22 円板
24,240,241 第2永久磁石
26 回転軸
30 支持板
X1 第1中心線
X2 第2中心線
Y1,Y2,Y3 吸引領域
Z1,Z2,Z3,Z4 反発領域
W1,W2 幅
H1,H2 高さ
Claims (5)
- 環状扇形の第1永久磁石が交互に異極になるように周方向に沿って複数配列された駆動側磁石列と、
環状扇形又は扇形の第2永久磁石が交互に異極になるように周方向に沿って複数配列され、かつ、第1永久磁石の磁極面と第2永久磁石の磁極面が向かい合うように配列された従動側磁石列と、を有し、
駆動側磁石列を回転駆動させることで、従動側磁石列を従動回転させる磁気カップリング装置であって、
複数の前記第1永久磁石のうちの特定の第1永久磁石の径方向の第1中心線と、複数の前記第2永久磁石のうちの特定の第2永久磁石の径方向の第2中心線とを、異極どうしが向かい合うように重ね合わせた状態で、中心線どうしが重ねられた前記特定の第1永久磁石及び前記特定の第2永久磁石に隣接する第1永久磁石及び第2永久磁石も含めて、反発力が作用する反発領域の面積が、吸引力が作用する吸引領域の面積の5~15%になるように設定され、
前記重ね合わせた状態において、前記特定の第1永久磁石及びこれに隣接する第1永久磁石には、それぞれ反発領域と吸引領域が形成されることを特徴とする磁気カップリング装置。 - 環状扇形の第1永久磁石が交互に異極になるように周方向に沿って複数配列された駆動側磁石列と、
環状扇形又は扇形の第2永久磁石が交互に異極になるように周方向に沿って複数配列され、かつ、第1永久磁石の磁極面と第2永久磁石の磁極面が向かい合うように配列された従動側磁石列と、を有し、
駆動側磁石列を回転駆動させることで、従動側磁石列を従動回転させる磁気カップリング装置であって、
複数の前記第1永久磁石のうちの特定の第1永久磁石の径方向の第1中心線と、複数の前記第2永久磁石のうちの特定の第2永久磁石の径方向の第2中心線とを、異極どうしが向かい合うように重ね合わせた状態で、中心線どうしが重ねられた前記特定の第1永久磁石及び前記特定の第2永久磁石に隣接する第1永久磁石及び第2永久磁石も含めて、反発力が作用する反発領域の面積が、吸引力が作用する吸引領域の面積の5~15%になるように設定され、
前記従動側磁石列は、駆動側磁石列の回転軸の周囲に、かつ、前記駆動側磁石列を搭載した円板内の領域において、円周方向に沿って複数配置されていることを特徴とする磁気カップリング装置。 - 前記第1永久磁石および前記第2永久磁石は、隙間なく周方向に沿って配列されることを特徴とする請求項1又は2に記載の磁気カップリング装置。
- 前記従動側磁石列を前記第1永久磁石の径方向に沿って移動させる機構が備えられていることを特徴とする請求項1~3のいずれか1項に記載の磁気カップリング装置。
- 前記第1永久磁石及び前記第2永久磁石の磁極面に強磁性体からなるポールピースが設けられていることを特徴とする請求項1~4のいずれか1項に記載の磁気カップリング装置。
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JP2020129000A JP7463222B2 (ja) | 2020-07-30 | 2020-07-30 | 磁気カップリング装置 |
US17/387,569 US11670999B2 (en) | 2020-07-30 | 2021-07-28 | Magnetic coupling device |
KR1020210099783A KR20220015351A (ko) | 2020-07-30 | 2021-07-29 | 자기 커플링 장치 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2014020561A (ja) | 2012-07-13 | 2014-02-03 | 希傑 ▲鄭▼ | 動力伝達装置 |
JP2017187130A (ja) | 2016-04-07 | 2017-10-12 | マツダ株式会社 | 動力伝達装置および駆動装置 |
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DE3605899A1 (de) * | 1986-02-24 | 1987-08-27 | Siemens Ag | Magnetkupplung mit blockierueberwachung |
JPH03285556A (ja) * | 1990-03-30 | 1991-12-16 | Katsuo Tsurumoto | 磁気歯車装置 |
JPH08317629A (ja) * | 1995-05-18 | 1996-11-29 | Nec Corp | 磁気動力伝達機構 |
US6054788A (en) * | 1998-08-12 | 2000-04-25 | Reliance Electric Industrial Company | Magnetic power transmission coupling |
JP3942101B2 (ja) | 2003-09-19 | 2007-07-11 | 株式会社松栄工機 | 磁気歯車 |
DE112009001208T5 (de) * | 2008-05-21 | 2012-01-12 | Denso Corporation | Magnetische Kopplungsvorrichtung |
JP6777055B2 (ja) | 2017-01-11 | 2020-10-28 | 東京エレクトロン株式会社 | 基板処理装置 |
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JP2014020561A (ja) | 2012-07-13 | 2014-02-03 | 希傑 ▲鄭▼ | 動力伝達装置 |
JP2017187130A (ja) | 2016-04-07 | 2017-10-12 | マツダ株式会社 | 動力伝達装置および駆動装置 |
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US11670999B2 (en) | 2023-06-06 |
US20220037977A1 (en) | 2022-02-03 |
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