JP7383876B2 - Imaging element and imaging device - Google Patents

Description

The present invention relates to an imaging device and an imaging device.

2. Description of the Related Art An imaging device is known in which a light-shielding film is formed that has the property of absorbing visible light and blocks light between adjacent pixels (Patent Document 1). However, in the imaging device of Patent Document 1, the light-shielding film is formed only in the insulating film under the color filter or only on the insulating film, so a sufficient light-shielding effect against oblique light cannot be obtained, and the image Image quality may deteriorate.

Japanese Patent Application Publication No. 2010-109295

According to the first aspect, the image sensor includes a first filter that transmits part of the light that has passed through the optical system, and a first photoelectric conversion section that photoelectrically converts the light that has passed through the first filter. a first pixel that outputs a signal used for focus detection of the optical system, a second filter that transmits a part of the light that has passed through the optical system, and a second filter that transmits the light that has passed through the second filter. a second pixel that has a second photoelectric conversion section that performs photoelectric conversion and outputs a signal used for image generation; the first filter and the second filter; the first photoelectric conversion section and the second photoelectric conversion section a semiconductor substrate provided with a semiconductor substrate; a planarization layer provided between the first pixel, a portion of which is between the first filter and the second filter, and another portion of which is within the planarization layer; and a black filter that is provided between the second pixel, or between the first filter and the second filter, and on the flattening layer, and absorbs a part of the incident light. A black filter is provided between the first absorption part and the first pixel and the second pixel in the flattening layer, and absorbs a part of the incident light, and is arranged to intersect with the direction in which the light enters. a second absorbent portion having a surface area larger than the first absorbent portion .

FIG. 1 is a diagram illustrating a configuration example of an imaging device according to a first embodiment. FIG. 3 is a diagram illustrating an example arrangement of pixels of an image sensor according to the first embodiment. FIG. 3 is a diagram for explaining signals generated by the image sensor according to the first embodiment. FIG. 1 is a plan view of an image sensor according to a first embodiment. FIG. 3 is a diagram illustrating an example of the configuration of pixels in the central region of the image sensor according to the first embodiment. FIG. 3 is a diagram illustrating a configuration example of pixels in the left end region of the image sensor according to the first embodiment. FIG. 3 is a diagram illustrating an example of the configuration of pixels in the right end region of the image sensor according to the first embodiment. FIG. 2 is a cross-sectional view of a pixel of the image sensor according to the first embodiment. 7 is a diagram illustrating an example of the configuration of pixels of an image sensor according to Modification 1. FIG. FIG. 7 is a diagram illustrating a configuration example of pixels in a central region of an image sensor according to a second embodiment. FIG. 7 is a diagram illustrating a configuration example of pixels in a left end region of an image sensor according to a second embodiment. FIG. 7 is a diagram illustrating a configuration example of pixels in a right end region of an image sensor according to a second embodiment. FIG. 7 is a diagram showing an example of the configuration of pixels of an image sensor according to a third embodiment. FIG. 7 is a diagram illustrating another configuration example of pixels of an image sensor according to a third embodiment. FIG. 7 is a diagram illustrating another configuration example of pixels of an image sensor according to a third embodiment. 7 is a diagram illustrating a configuration example of a pixel of an image sensor according to Modification 3. FIG. 12 is a diagram illustrating an example of a pixel configuration of an image sensor according to modification example 4. FIG.

(First embodiment)
FIG. 1 is a diagram showing a configuration example of an electronic camera 1 (hereinafter referred to as camera 1), which is an example of an imaging device according to a first embodiment. The camera 1 includes a camera body 2 and an interchangeable lens 3. The interchangeable lens 3 is removably attached to the camera body 2 via a mount section (not shown). When the interchangeable lens 3 is attached to the camera body 2, the connecting part 202 on the camera body 2 side and the connecting part 302 on the interchangeable lens 3 side are connected, and communication between the camera body 2 and the interchangeable lens 3 becomes possible.

In FIG. 1, light from a subject enters in the positive direction of the Z-axis in FIG. Further, as shown in the coordinate axes, the direction toward the front of the page perpendicular to the Z-axis is the positive X-axis direction, and the downward direction perpendicular to the Z-axis and the X-axis is the positive Y-axis direction. In the following several figures, the coordinate axes are displayed based on the coordinate axes in FIG. 1 so that the orientation of each figure can be understood.

The interchangeable lens 3 includes an imaging optical system (imaging optical system) 31, a lens control section 32, and a lens memory 33. The imaging optical system 31 includes a plurality of lenses including a focusing lens and an aperture, and forms a subject image on the imaging surface of the imaging element 22 of the camera body 2.

The lens control section 32 includes a processor such as a CPU, FPGA, or ASIC, and a memory such as a ROM or RAM, and controls each section of the interchangeable lens 3 based on a control program. The lens control unit 32 adjusts the focal position of the imaging optical system 31 by moving the focusing lens forward and backward in the optical axis L1 direction based on a signal output from the body control unit 21 of the camera body 2. The signal output from the body control unit 21 includes information indicating the moving direction, moving amount, moving speed, etc. of the focusing lens. Further, the lens control section 32 controls the aperture diameter of the diaphragm based on a signal output from the body control section 21 of the camera body 2.

The lens memory 33 is composed of, for example, a nonvolatile storage medium. The lens memory 33 stores information related to the interchangeable lens 3 as lens information. The lens information includes, for example, information regarding the position of the exit pupil of the imaging optical system 31. Writing of lens information to the lens memory 33 and reading of lens information from the lens memory 33 are performed by the lens control unit 32.

The camera body 2 includes a body control section 21, an image sensor 22, a memory 23, a display section 24, and an operation section 25. The body control section 21 includes a processor such as a CPU, FPGA, or ASIC, and a memory such as a ROM or RAM, and controls each section of the camera 1 based on a control program. Further, the body control unit 21 performs various signal processing.

The image sensor 22 is, for example, a CMOS image sensor or a CCD image sensor. The imaging element 22 receives the light beam that has passed through the exit pupil of the imaging optical system 31 and captures a subject image formed by the imaging optical system 31 . In the image sensor 22, a plurality of pixels each having a photoelectric conversion section are arranged two-dimensionally (for example, in a row direction and a column direction). The photoelectric conversion section is composed of, for example, a photodiode (PD). The image sensor 22 photoelectrically converts incident light into a photoelectric conversion unit to generate charges, and outputs a signal based on the generated charges to the body control unit 21 . The image sensor 22 will be described below with reference to FIGS. 2 and 3.

FIG. 2 is a diagram showing an example of arrangement of pixels of the image sensor 22 according to the first embodiment. In the image sensor 22, pixels are arranged two-dimensionally (row direction (±X direction) and column direction (±Y direction)). The example shown in FIG. 2 shows a total of 48 pixels arranged in 6 rows and 8 columns. Note that the number and arrangement of pixels arranged in the image sensor 22 are not limited to the illustrated example. The image sensor 22 is provided with, for example, several million to hundreds of millions of pixels, or more.

The image sensor 22 includes a plurality of image pixels 12 and focus detection pixels 11 and 13. The imaging pixel 12 is provided with one of three color filters 51 having different spectral characteristics, for example, R (red), G (green), and B (blue). The G color filter transmits light in a wavelength range shorter than that of the R color filter. The B color filter transmits light in a wavelength range shorter than that of the G color filter. The R color filter 51 mainly transmits light in the red wavelength range, the G color filter 51 mainly transmits light in the green wavelength range, and the B color filter 51 mainly transmits light in the blue wavelength range. Transparent. Thereby, the pixels have different spectral characteristics depending on the color filters 51 arranged. The R pixel, G pixel, and B pixel are arranged according to the Bayer array.

The focus detection pixels 11 and 13 are arranged to replace some of the R, G, and B imaging pixels 12 arranged in the Bayer array as described above. The focus detection pixels 11 and 13 are provided with a color filter 51 and a light shielding film 43. The focus detection pixel 11 and the focus detection pixel 13 have different positions of their light shielding portions 43. In the focus detection pixel 11 and the focus detection pixel 13, a W (white) color filter that transmits light in the R, G, and B wavelength ranges is arranged as the color filter 51, for example.

In this way, the R, G, B, and W color filters transmit light in different wavelength ranges. Note that the wavelength ranges being different from each other means that the wavelength ranges do not completely match, and each wavelength range may partially overlap, or one wavelength range may include the other wavelength range. You can leave it there. For example, the wavelength ranges of R and G, B and G, and B and R may not be completely separated, but may partially overlap. That is, the spectral characteristics of the plurality of color filters 51 may partially overlap.

The image sensor 22 has a pixel 12 having an R color filter 51 (hereinafter referred to as R pixel) 12 and a pixel 12 having a G color filter 51 (hereinafter referred to as G pixel) 12 arranged alternately in the row direction. It has one pixel group 401. The image sensor 22 also has a second pixel group 402 in which G pixels 12 and pixels 12 having a B color filter 51 (hereinafter referred to as B pixels) 12 are arranged alternately in the row direction. Furthermore, the image sensor 22 has a third pixel group 403 in which the G pixel 12 and the focus detection pixels 11 and 13 are arranged in the row direction.

Note that the third pixel group 403 does not need to include both focus detection pixels 11 and 13. For example, the second pixel group 402 may include the G pixel 12 and the focus detection pixel 11, and the third pixel group 403 may include the G pixel 12 and the focus detection pixel 13. Further, the third pixel group 403 has focus detection pixels 11 and 13 at positions corresponding to the B pixel 12 of the second pixel group 402; Focus detection pixels 11 and 13 may be provided at some of the positions. For example, the third pixel group 403 may include at least one of the focus detection pixels 11 and 13, a G pixel 12, and a B pixel 12.

As shown in FIG. 2, absorption sections 90 are arranged in a grid pattern in the image sensor 22. As shown in FIG. The absorption section 90 is a filter (black filter) that is made of an organic material such as a pigment and has a characteristic of absorbing light in the visible wavelength range. If k is the extinction coefficient of the absorption section 90 for incident light with a wavelength of 530 nm, then k=0.15 to 0.20, for example. Note that the absorbing portion 90 may be formed so that the extinction coefficient k is approximately 0.1 to 0.30. As will be described later, the absorption section 90 limits (reduces) light leaking from a certain pixel to pixels in the vicinity of that pixel by absorbing a portion of the incident light.

Each pixel receives light incident through the imaging optical system 31 and generates a signal according to the amount of received light. Although details will be described later, the imaging pixel 12 outputs a signal for an image data generation unit 21a (described later) to generate image data, that is, an imaging signal. The focus detection pixels 11 and 13 output signals for a focus detection section 21b to be described later to calculate a defocus amount, that is, first and second focus detection signals.

FIG. 3 is a diagram for explaining signals generated by the image sensor 22 according to the first embodiment. FIG. 3 shows one imaging pixel 12, one focus detection pixel 11, and one focus detection pixel 13 among the pixels provided in the image sensor 22.

The imaging pixel 12 includes a microlens 44 , a color filter 51 , and a photoelectric conversion unit (PD) 42 that receives the light beam that has passed through the microlens 44 and the color filter 51 . The focus detection pixels 11 and 13 include a microlens 44 , a color filter 51 , a light shielding section 43 that blocks part of the light beam that has passed through the microlens 44 and the color filter 51 , and a light shielding section 43 that blocks part of the light beam that has passed through the microlens 44 and the color filter 51 . It has a photoelectric conversion section 42 into which the other part of the luminous flux is incident. The photoelectric conversion section 42 of the focus detection pixels 11 and 13 photoelectrically converts the light beam that is not blocked by the light blocking section 43 among the light beams that have passed through the microlens 44 and the color filter 51 .

The light shielding section 43 of the focus detection pixel 11 is arranged corresponding to approximately the left half of the photoelectric conversion section 42 (the negative X direction side of the photoelectric conversion section 42). The light shielding part 43 of the focus detection pixel 11 is an area on the negative side of the X-axis from the center of the photoelectric conversion part 42 of the focus detection pixel 11 in a plane (XY plane) that intersects the light incident direction (Z-axis direction). at least a portion thereof is located. Further, the area 46 of the focus detection pixel 11 is an area corresponding to approximately the right half of the photoelectric conversion unit 42 (the positive X direction side of the photoelectric conversion unit 42). The region 46 of the focus detection pixel 11 is located on the X-axis plus direction side of the center of the photoelectric conversion section 42 of the focus detection pixel 11 in a plane (XY plane) that intersects the light incident direction (Z-axis direction). This is an area where at least a portion of the area is placed.

On the other hand, the light shielding part 43 of the focus detection pixel 13 is arranged corresponding to approximately the right half area of the photoelectric conversion part 42. The light shielding part 43 of the focus detection pixel 13 is a region on the X-axis plus direction side from the center of the photoelectric conversion part 42 of the focus detection pixel 13 in a plane (XY plane) that intersects the light incident direction (Z-axis direction). at least a portion thereof is located. Further, the area 46 of the focus detection pixel 13 corresponds to approximately the left half area of the photoelectric conversion unit 42. The area 46 of the focus detection pixel 13 is located on the negative side of the X-axis from the center of the photoelectric conversion unit 42 of the focus detection pixel 13 in a plane (XY plane) that intersects the light incident direction (Z-axis direction). This is an area where at least a portion of the area is placed.

The microlens 44 of each pixel condenses light incident from above through the imaging optical system 31 in FIG. In the focus detection pixel 11, of the light that has passed through the microlens 44, the second light beam 62 that has passed through the second pupil area is blocked by the light blocking section 43 after passing through the color filter 51. Furthermore, in the focus detection pixel 11 , among the light that has passed through the microlens 44 , the first light beam 61 that has passed through the first pupil area passes through the color filter 51 and the area 46 and enters the photoelectric conversion unit 42 . . The region 46 of the focus detection pixel 11 acts as an aperture that allows the first light beam 61 that has passed through the microlens 44 and the color filter 51 to enter the photoelectric conversion section 42 . The photoelectric conversion unit 42 of the focus detection pixel 11 photoelectrically converts the first light flux 61 that is incident on the photoelectric conversion unit 42 to generate charges.

On the other hand, in the focus detection pixel 13 , among the light transmitted through the microlens 44 , the first light beam 61 that has passed through the first pupil region is blocked by the light shielding section 43 after passing through the color filter 51 . In addition, in the focus detection pixel 13 , of the light that has passed through the microlens 44 , a second light beam 62 that has passed through the second pupil area passes through the color filter 51 and the area 46 and enters the photoelectric conversion unit 42 . . The region 46 of the focus detection pixel 13 acts as an aperture that allows the second light beam 62 that has passed through the microlens 44 and the color filter 51 to enter the photoelectric conversion section 42 . The photoelectric conversion unit 42 of the focus detection pixel 13 photoelectrically converts the second light beam 62 that is incident on the photoelectric conversion unit 42 to generate charges.

In this way, the focus detection pixels 11 and 13 are configured to receive light that has passed through different regions of the pupil of the imaging optical system 31, and perform pupil division. The focus detection pixel 11 outputs a first focus detection signal based on a charge obtained by photoelectrically converting the first light beam 61 that has passed through the first pupil region. The focus detection pixel 13 outputs a second focus detection signal based on a charge obtained by photoelectrically converting the second light beam 62 that has passed through the second pupil region.

In the imaging pixel 12, the first and second light fluxes 61 and 62 that have passed through the first and second pupil regions of the pupil of the imaging optical system 31 are transmitted to the photoelectric conversion unit 42 via the microlens 44 and the color filter 51. incident on . The imaging pixel 12 outputs an imaging signal related to the light flux that has passed through both the first and second pupil regions. That is, the imaging pixel 12 photoelectrically converts the light that has passed through both the first and second pupil regions, and outputs an imaging signal based on the charges generated by the photoelectric conversion.

The imaging device 22 outputs an imaging signal for generating image data and first and second focus detection signals for performing phase difference focus detection on the focus of the imaging optical system 31 to the body control unit 21. . As described above, the first and second focus detection signals are generated by the first and second light beams that have passed through the first and second regions of the exit pupil of the imaging optical system 31, respectively. These are signals obtained by photoelectrically converting each image.

Although the focus detection pixels 11 and 13 are arranged in the row direction (X-axis direction) in FIGS. 2 and 3, they may be arranged in the column direction (Y-axis direction). When the focus detection pixels 11 and 13 are arranged in the column direction, the light shielding part 43 of the focus detection pixel 11 is arranged corresponding to approximately one of the upper and lower half areas of the photoelectric conversion part 42, and the focus detection pixel 11 is arranged in the column direction. The light shielding section 43 of the pixel 13 is arranged substantially corresponding to the other region of the upper half and the lower half of the photoelectric conversion section 42 . For example, at least a portion of the light shielding section 43 of the focus detection pixel 11 is arranged in a region on the Y-axis plus direction side with respect to the center of the photoelectric conversion section 42 of the focus detection pixel 11. At least a portion of the light shielding section 43 of the focus detection pixel 13 is arranged in a region on the Y-axis minus direction side from the center of the photoelectric conversion section 42 of the focus detection pixel 13 .

In FIG. 1, the memory 23 is, for example, a recording medium such as a memory card. Image data and the like are recorded in the memory 23. Writing data to the memory 23 and reading data from the memory 23 are performed by the body control unit 21. The display unit 24 displays images based on image data, information regarding photography such as shutter speed and aperture value, and a menu screen. The operation section 25 includes various setting switches such as a release button and a power switch, and outputs operation signals corresponding to each operation to the body control section 21.

The body control section 21 includes an image data generation section 21a and a focus detection section 21b. The image data generation unit 21a performs various types of image processing on the image signal output from the image sensor 22 to generate image data. Image processing includes, for example, known image processing such as gradation conversion processing, color interpolation processing, and edge enhancement processing.

The focus detection unit 21b performs focus detection processing necessary for automatic focus adjustment (AF) of the imaging optical system 31. Specifically, the focus detection unit 21b detects the focus position of a focus adjustment lens (focus lens) for focusing the image by the imaging optical system 31 on the imaging surface of the image sensor 22. The focus detection unit 21b uses the focus detection signal output from the image sensor 22 to calculate the defocus amount using a pupil division type phase difference detection method. More specifically, the focus detection section 21b performs a correlation calculation to determine the in-focus position based on the first and second focus detection signals. Through this correlation calculation, the focus detection unit 21b calculates the amount of deviation between the image of the first light beam 61 that has passed through the first pupil area and the image of the second light beam 62 that has passed through the second pupil area, The defocus amount is calculated based on this image shift amount. The focus detection unit 21b calculates the amount of movement of the focusing lens to the in-focus position based on the calculated defocus amount.

The focus detection unit 21b determines whether the defocus amount is within a tolerance value. The focus detection unit 21b determines that the object is in focus if the defocus amount is within the allowable value. On the other hand, if the defocus amount exceeds the allowable value, the focus detection section 21b determines that the focus is not in focus, and instructs the lens control section 32 of the interchangeable lens 3 to move the focusing lens and drive the lens. Send a signal. The lens control section 32 receives an instruction from the focus detection section 21b and moves the focus adjustment lens according to the amount of movement, thereby automatically performing focus adjustment.

FIG. 4 is a plan view of the image sensor 22 according to the first embodiment. The image sensor 22 has a pixel area (imaging area) 100 in which pixels are arranged in a matrix. That is, in the pixel area 100, as shown in FIGS. 2 and 3, a plurality of pixels including the imaging pixel 12 and the focus detection pixels 11 and 13 are arranged two-dimensionally. Peripheral circuits (analog-to-digital conversion circuits, etc.) that process signals from pixels are arranged outside the pixel area. The central region of the image sensor 22, ie, the central region 101 of the pixel region 100, is located on the optical axis L1 of the interchangeable lens 3.

Further, a region 102 shown in FIG. 4 is a region located at the left end of the pixel region 100, and a region 103 is a region located at the right end of the pixel region 100. The region 102 and the region 103 are regions having a long distance from the center of the pixel region 100 (distance from the optical axis L1), that is, regions having a high image height. In the following, the structure of the pixels of the image sensor 22 according to this embodiment will be described in more detail, taking as an example the pixels arranged in each of the central region 101, the left end region 102, and the right end region 103. In particular, the function of the absorbing section 90 will be explained using FIGS. 5 to 7.

FIG. 5 is a diagram showing an example of the configuration of pixels in the central region 101 of the image sensor 22 according to the first embodiment. FIG. 5A shows one focus detection pixel 11 (W pixel) among the third pixel group 403 (see FIG. 3) arranged in the central region 101 and the focus detection pixel 11 arranged adjacent to the focus detection pixel 11. One imaging pixel 12 (G pixel) is shown. FIG. 5B shows one imaging pixel 12 (B pixel) among the second pixel group 402 (see FIG. 3) arranged in the central region 101 and the pixels arranged adjacent to the imaging pixel 12. One imaging pixel 12 (G pixel) is shown.

The image sensor 22 includes a substrate 111 and a wiring layer 112 provided in a laminated manner on the substrate 111. The substrate 111 is made of a semiconductor substrate. The wiring layer 112 is a wiring layer including a conductive film (metal film) and an insulating film, and has a plurality of wirings, vias, etc. arranged therein. Copper, aluminum, tungsten, etc. are used for the conductor film. The insulating film is made of an oxide film, a nitride film, or the like.

The focus detection pixel 11 and the imaging pixel 12 each include a microlens 44, a first flattening layer 81, a color filter 51, a second flattening layer 82, an absorption section 90, and a photoelectric conversion section ( PD) 42 is provided. The focus detection pixel 11 is further provided with a light shielding section 43 .

The first flattening layer (flattening film) 81 is made of an organic material such as resin, and is provided between the microlens 44 and the color filter 51. The second planarization layer (planarization film) 82 is made of an organic material such as resin, and is provided between the color filter 51 and the wiring layer 112. Further, a part of the second planarization layer 82 is provided between the absorption section 90 and the wiring layer 112.

The wiring 47 of the wiring layer 112 is constituted by the uppermost conductor film among the plurality of conductor film layers provided in the wiring layer 112. The wiring 47 is, for example, a power line or a ground line. Further, the wiring 47 also functions as an inter-pixel light shielding section that suppresses light leakage to adjacent pixels.

The focus detection pixel 11 and the imaging pixel 12 of the third pixel group 403 shown in FIG. 5A are provided with a W color filter and a G color filter, respectively, as the color filters 51. Further, the two imaging pixels 12 of the second pixel group 402 shown in FIG. 5(b) are provided with a B color filter and a G color filter, respectively, as the color filters 51.

The upper part of the absorption section 90 is provided between adjacent color filters 51, for example, between the color filter 51 of the focus detection pixel 11 and the color filter 51 of the imaging pixel 12. Further, the lower part of the absorption section 90 is provided within the second planarization layer 82 and at the boundary between adjacent pixels. That is, the absorption section 90 is provided between adjacent color filters 51 and between adjacent pixels of the second flattening layer 82 . In the case of the example shown in FIG. 5A, a portion of the color filter 51 of the focus detection pixel 11, a portion of the color filter 51 of the imaging pixel 12, and a portion of the second flattening layer 82 are each replaced. Therefore, it can be said that the absorbing section 90 is provided.

In the camera 1, abnormal light (ghost light) is generated due to light that has passed through the imaging optical system 31 being reflected within the casing of the camera body 2 or by the microlens 44 of the image sensor 22. Therefore, light with a large incident angle (for example, light with an incident angle of 40° to 80°) may enter the microlens 44 of each pixel. When ghost light occurs, light that is inclined with respect to the optical axis of the microlens 44 that each of the imaging pixels 12 and the focus detection pixels 11 and 13 have enters. In this case, in the image sensor 22, a portion of the light that has passed through the microlens 44 and color filter 51 of a pixel may leak to surrounding pixels of that pixel. In the following explanation, the influence of ghost light will be explained as a representative type of incident light with a large angle of incidence on the microlens 44, but the explanation regarding ghost light applies to the influence of various types of incident light with a large angle of incidence. .

In FIG. 5A, a broken line 71 schematically represents ghost light that passes through the color filter 51 of the focus detection pixel 11 and enters the imaging pixel (G pixel) 12 next to it. The ghost light 71 enters the focus detection pixel 11 obliquely with respect to the optical axis of the microlens 44 of the focus detection pixel 11 . This ghost light 71 passes through the microlens 44 and color filter 51 of the focus detection pixel 11 and advances toward the imaging pixel (G pixel) 12 next to it. A part of the ghost light 71 that has passed through the color filter 51 of the focus detection pixel 11 enters the absorption section 90 . Note that another part of this ghost light 71 is blocked by the wiring (inter-pixel light shielding section) 47 and does not enter the adjacent imaging pixel (G pixel) 12.

A portion of the ghost light 71 that has entered the absorption section 90 is absorbed by the absorption section 90. This suppresses light incident on the focus detection pixel 11 from leaking to the adjacent imaging pixel 12. Therefore, it is possible to suppress the signal component due to the light leaking from the focus detection pixel 11 from being mixed into the imaging signal generated by the imaging pixel 12, and to prevent the image quality of the image generated using the imaging signal from deteriorating. be able to.

Note that the same applies to ghost light that enters the imaging pixel 12 obliquely with respect to the optical axis of the microlens 44 of the imaging pixel 12, and a portion of the ghost light that has passed through the color filter 51 of the imaging pixel 12 is absorbed by the absorption section. 90 and is absorbed. This suppresses light incident on the imaging pixel 12 from leaking to the adjacent focus detection pixel 11. Therefore, the signal component due to the light leaking from the imaging pixel 12 is suppressed from being mixed into the focus detection signal generated by the focus detection pixel 11, and the accuracy of focus detection using the focus detection signal is prevented from decreasing. be able to.

In FIG. 5B, a broken line 71 schematically represents ghost light that passes through the color filter 51 of the imaging pixel (B pixel) 12 and enters the adjacent imaging pixel (G pixel) 12. The ghost light 71 enters the imaging pixel (B pixel) 12 obliquely with respect to the optical axis of the microlens 44 of the imaging pixel (B pixel) 12 . The ghost light 71 passes through the microlens 44 and color filter 51 of the imaging pixel (B pixel) 12, and enters the adjacent imaging pixel (G pixel) 12. A part of this obliquely incident ghost light 71 enters the absorption section 90 and is absorbed. Therefore, light incident on the imaging pixel (B pixel) 12 can be prevented from leaking to the adjacent imaging pixel (G pixel) 12.

Note that the absorption section 90 is formed with a predetermined width so as not to transmit light in the visible wavelength range. When the width of the absorption section 90 increases, the width of a portion of the color filter 51 becomes correspondingly smaller, causing vignetting and reducing the amount of light received by the photoelectric conversion section 42 of each pixel. Therefore, if the pixel pitch (pixel spacing) is L as shown in FIG. It is desirable to set it so that L×0.2). By setting the width W of the absorption section 90 in this manner, it is possible to ensure the amount of light received by the photoelectric conversion section 42 while reducing light leaking to adjacent pixels.

For example, the absorbing portion 90 may be formed so that 0.2 μm<W<1.5 μm, 0.3 μm<W<1.0 μm, 0.5 μm<W<0.8 μm, and 0.3 μm< It may be formed so that W<0.5 μm.

In this embodiment, as described above, a portion of the absorption section 90 is provided between adjacent color filters 51. The height (thickness) of the portion of the absorption section 90 provided between adjacent color filters 51 is, for example, half the height of the color filters 51 in the Z-axis direction. Therefore, the position of the color filter 51 in the Z-axis direction can be lowered compared to the case where the color filter 51 is provided at the same height on the absorption section 90. Therefore, the distance between the color filter 51 and the photoelectric conversion section 42 is shortened, and the amount of light received by the photoelectric conversion section 42 can be increased.

Further, in this embodiment, a part of the second planarization layer (planarization film) 82 is disposed between the absorption section 90 and the wiring layer 112. Thereby, the flatness of the absorption section 90 can be improved, and variations in the characteristics of the absorption section 90 of each pixel can be suppressed. Furthermore, compared to the case where the absorbing section 90 is formed only between the color filters 51, the height (thickness) of the absorbing section 90 in the Z-axis direction can be increased.

Furthermore, in this embodiment, the absorption section 90 is made of a material that absorbs visible light without reflecting it. Therefore, it is possible to reduce stray light due to reflection, and it is possible to avoid affecting signals generated by each pixel.

In the following, a comparative example will be described in which the difference between the amount of light leaking from the focus detection pixels 11 and 13 to the adjacent imaging pixel 12 and the amount of light leaking from the imaging pixel 12 to the adjacent imaging pixel 12 is reduced. This will be explained in comparison with A comparative example is a case in which each pixel in FIG. 5A does not have the absorption section 90. In this case, a portion of the ghost light 71 that enters the microlens 44 of the focus detection pixel 11 passes through the W color filter 51 and enters the photoelectric conversion section 42 of the adjacent G pixel 12. Since the W color filter 51 has a spectral characteristic that transmits light in the R, G, and B wavelength ranges, the light incident on the photoelectric conversion unit 42 of the G pixel 12 of the third pixel group 403 contains B. This also includes light in other wavelength ranges. On the other hand, light in the B wavelength range enters the G pixel 12 of the second pixel group 402 from the adjacent B pixel 12.

Therefore, the amount of light from the focus detection pixels 11 and 13 to the adjacent imaging pixel 12 due to ghost light or the like is greater than the amount of light from the imaging pixel 12 to the adjacent imaging pixel 12. As a result, a difference occurs in the image pickup signal between the image pickup pixel (G pixel) 12 having the focus detection pixel 11 next to it and the image pickup pixel (G pixel) 12 having the image pickup pixel (B pixel) 12 next to it. Therefore, in the absence of the absorption section 90, the image quality of the image generated using the imaging signal from the imaging pixel 12 deteriorates. More specifically, unnatural coloring occurs in the image, giving the user a sense of discomfort.

In contrast, in this embodiment, by providing the absorption section 90 as described above, leakage of light in the visible wavelength range to adjacent pixels is suppressed. Therefore, the difference between the amount of light leaking from the focus detection pixels 11 and 13 to the nearby imaging pixel 12 due to ghost light and the like and the amount of light leaking from the imaging pixel 12 to the nearby imaging pixel 12 can be reduced. As a result, it is possible to prevent the image quality of the image generated using the imaging signal from each pixel from deteriorating.

FIG. 6 is a diagram showing an example of the configuration of pixels in the left end region 102 of the image sensor 22 according to the first embodiment. FIG. 6A shows the focus detection pixel 11 of the third pixel group 403 arranged in the left end region 102 and the G imaging pixel 12 arranged adjacent to the focus detection pixel 11. FIG. 6B shows a B imaging pixel 12 of the second pixel group 402 and a G imaging pixel 12 arranged adjacent to the B imaging pixel 12.

The microlens 44, color filter 51, absorption section 90, and wiring 47 of each of the focus detection pixel 11 and the imaging pixel 12 in the left end area 102 are connected to the pixel area 100 with respect to the remainder of the focus detection pixel 11 and the remainder of the imaging pixel 12. are arranged shifted toward the center (in the positive direction of the X-axis). Thereby, the amount of light that enters the photoelectric conversion unit 42 via the imaging optical system 31 of the camera 1 can be increased. In the image sensor 22, for example, the farther a pixel is arranged from the center of the pixel area 100, the more the microlens 44, color filter 51, absorption section 90, and wiring 47 of that pixel are shifted toward the center.

In the third pixel group 403 in FIG. 6A, a part of the ghost light 71 that has passed through the microlens 44 and color filter 51 of the focus detection pixel 11 is transmitted to the boundary between the focus detection pixel 11 and the G pixel 12. The light is incident on the absorption section 90 provided. A portion of this ghost light is absorbed by the absorption section 90. In the second pixel group 402 in FIG. 6B, part of the ghost light 71 that has passed through the microlens 44 and color filter 51 of the B pixel 12 enters the absorption section 90 and is absorbed. In this way, even in the left end region 102, leakage of light to adjacent pixels is suppressed. Therefore, it is possible to prevent deterioration in image quality and focus detection accuracy from occurring.

FIG. 7 is a diagram showing an example of the configuration of pixels in the right end area 103 of the image sensor 22 according to the first embodiment. FIG. 7A shows the focus detection pixel 11 of the third pixel group 403 and the G imaging pixel 12 arranged adjacent to the focus detection pixel 11. FIG. 7B shows a B imaging pixel 12 of the second pixel group 402 and a G imaging pixel 12 arranged adjacent to the B imaging pixel 12.

The microlens 44, color filter 51, absorption section 90, and wiring 47 of each of the focus detection pixel 11 and the imaging pixel 12 in the right end region 103 are arranged to be shifted toward the center of the pixel region 100 (toward the negative X-axis direction). Ru. Thereby, the amount of light that enters the photoelectric conversion unit 42 via the imaging optical system 31 of the camera 1 can be increased.

In the third pixel group 403 in FIG. 7A, part of the ghost light that has passed through the microlens 44 and color filter 51 of the focus detection pixel 11 is disposed at the boundary between the focus detection pixel 11 and the G pixel 12. The light enters the absorbed absorption section 90 and is absorbed. In the second pixel group 402 in FIG. 7B, part of the ghost light 71 that has passed through the microlens 44 and color filter 51 of the B pixel 12 enters the absorption section 90 and is absorbed. In this way, even in the right end region 102, leakage of light to adjacent pixels is suppressed. Therefore, it is possible to prevent deterioration in image quality and focus detection accuracy from occurring.

FIG. 8 is a cross-sectional view of the focus detection pixel 11 and the imaging pixel 12 along line A-A' in FIG. As shown in FIG. 8, in the diagonal portion of the pixel, a gap occurs between adjacent microlenses 44, and ghost light 71 may enter this gap. Even when such ghost light occurs, a portion of the ghost light 71 enters and is absorbed by the absorption section 90 provided between pixels. In this way, even in the diagonal portions of pixels, leakage of light to adjacent pixels is suppressed.

According to the embodiment described above, the following effects can be obtained.
(1) The image sensor 22 includes a first pixel ( For example, an imaging pixel), a second filter that transmits light in a second wavelength range different from the first wavelength range among the incident light, and a second photoelectric conversion unit that photoelectrically converts the light that has passed through the second filter. A planarization layer (second pixel) formed between a second pixel (for example, a focus detection pixel), a first filter, a second filter, and a semiconductor substrate 111 having a first photoelectric conversion section and a second photoelectric conversion section an absorption section 90 that absorbs a part of the incident light, which is formed in the planarization layer 82), between the first filter and the second filter, and between the first pixel and the second pixel; Equipped with In this embodiment, the absorbing portions 90 are provided between adjacent color filters 51 and between adjacent pixels within the second planarization layer 82. By doing this, it is possible to suppress light from leaking to adjacent pixels. As a result, it is possible to prevent deterioration in image quality and focus detection accuracy from occurring.

(Modification 1)
FIG. 9 is a diagram illustrating an example of the configuration of pixels of an image sensor according to Modification 1. As shown in FIG. 9, the width of the absorbing portion 90 may be made smaller as it goes upward (toward the negative Z-axis direction). Assuming that the width of the upper part of the absorbing part 90 is Wt and the width of the lower part of the absorbing part 90 is Wb, the absorbing part 90 is formed so that Wb>Wt. As shown in FIG. 9(a), the upper part of the absorbing part 90 may be rounded, or as shown in FIG. 9(b), the shape of the absorbing part 90 may be a trapezoid with a narrow upper part. In this case, the area of the upper part of the absorbent part 90 is smaller than the area of the lower part of the absorbent part 90. In other words, in the plane (XY plane) that intersects the light incident direction (Z-axis direction), the area of the absorption part 90 is larger than that of the color filter 51 of the focus detection pixel 11 or the second flattening layer 82 side. The color filter 51 side of the imaging pixel 12 is smaller. By doing so, it is possible to prevent the light that has passed through the color filter 51 of the pixel from being eclipsed above the absorption section 90 of the pixel. As a result, the amount of light received by the photoelectric conversion unit 42 can be increased while reducing light leaking to adjacent pixels.

(Modification 2)
In the embodiment described above, an example has been described in which the absorption portions 90 are provided between adjacent color filters 51 and between adjacent pixels of the second planarization layer 82. However, the absorbing section 90 may be provided only between adjacent color filters 51.

(Second embodiment)
An imaging device according to a second embodiment will be described with reference to the drawings. FIG. 10 is a diagram showing an example of the configuration of pixels in the central region 101 of the image sensor 22 according to the second embodiment. The main differences between the second embodiment and the first embodiment are as follows. In the first embodiment, as shown in FIG. 5 and the like, absorption portions 90 are formed between the color filters 51 and the second flattening layer 82. In the second embodiment, a first absorption section 91 is formed between adjacent color filters 51, and a second absorption section 92 is formed in the second planarization layer 82. In addition, in the drawings, the same reference numerals are given to the same or corresponding parts as in the first embodiment, and differences will be mainly explained.

In FIG. 10, the first absorption section 91 is provided between the color filter 51 of the focus detection pixel 11 and the color filter 51 of the imaging pixel 12. It can also be said that the first absorption section 91 is provided to replace a portion of the color filter 51 of the focus detection pixel 11 and a portion of the color filter 51 of the imaging pixel 12, respectively. The second absorber 92 is provided within the second planarization layer 82 . The first absorption section 91 and the second absorption section 92 are each made of an organic material and have a property of absorbing light in the visible wavelength range.

In FIG. 10A, the ghost light 71 passes through the microlens 44 and color filter 51 of the focus detection pixel 11, and advances toward the imaging pixel 12 next to it. A part of the ghost light 71 that has passed through the color filter 51 of the focus detection pixel 11 is absorbed by the first absorption section 91 and the second absorption section 92. This suppresses light incident on the focus detection pixel 11 from leaking to the adjacent imaging pixel 12. Therefore, it is possible to suppress noise from being mixed into the imaging signal generated by the imaging pixel 12, and to prevent the image quality of the image generated using the imaging signal from deteriorating.

In FIG. 10B, a part of the ghost light 71 that has passed through the microlens 44 and color filter 51 of the B pixel 12 enters the first absorption section 91 and the second absorption section 92 and is absorbed. Therefore, light incident on the imaging pixel (B pixel) 12 is suppressed from leaking to the adjacent imaging pixel (G pixel) 12.

Note that, as shown in FIG. 10(a), when the pixel pitch (pixel spacing) is L, the width (width in the X-axis direction) W2 of the second absorption section 92 is (L×0.1)<W2 It is desirable to set it so that <(L×0.2). By setting the width W2 of the second absorption section 92 in this manner, it is possible to ensure the amount of light received by the pixel while reducing light leaking to adjacent pixels. Furthermore, it is desirable that the width (width in the X-axis direction) W1 of the first absorbing portion 91 is set so that W1<W2. In this case, it can be said that the area of the first absorption section 91 is smaller than the area of the second absorption section 92 in a plane (XY plane) that intersects the direction in which light enters (Z-axis direction). In this way, by making the width W1 of the first absorption section 91 smaller than the width W2 of the second absorption section 92, the amount of light incident on the photoelectric conversion section 42 can be reduced while reducing the light leaking to adjacent pixels. can be increased.

Further, in this embodiment, a part of the second planarization layer (planarization film) 82 is arranged between the second absorption section 92 and the wiring layer 112. Thereby, the flatness of the second absorption section 92 can be improved, and variations in the characteristics of the second absorption section 92 of each pixel can be suppressed.

Furthermore, in this embodiment, a part of the second flattening layer (flattening film) 82 is disposed between the first absorption part 91 and the second absorption part 92. That is, the first absorption section 91 is provided on the planarization film formed by the second planarization layer 82 . Therefore, the flatness of the first absorption section 91 can be improved, and variations in the characteristics of the first absorption section 91 of each pixel can be suppressed.

Note that the thickness (film thickness) of the flattening film between the first absorbing part 91 and the second absorbing part 92 is made as thin as possible to achieve a predetermined flatness. It is possible to prevent light from leaking through the chemical film. For example, as shown in FIG. 10, if the thickness of the flattening film between the first absorption part 91 and the second absorption part 92 is t, then the film thickness t=W1×60% or less, or the film thickness It is desirable to set it so that t=W1×35% or less.

Furthermore, in this embodiment, the first absorbent section 91 and the second absorbent section 92 can be made of different materials. For example, the first absorption section 91 may be formed using an organic material such as a resin, and the second absorption section 92 may be formed using an inorganic material such as a silicon oxide film.

FIG. 11 is a diagram showing an example of the configuration of pixels in the left end region 102 of the image sensor 22 according to the second embodiment. The microlens 44, color filter 51, first absorption section 91, second absorption section 92, and wiring (inter-pixel light shielding section) 47 of the pixel in the left end region 102 are located at the center of the pixel region 100 with respect to the rest of the pixel. side (X-axis positive direction side).

For example, in the pixel in the left end region 102 of FIG. 11(a), compared to the pixel in the central region 101 of FIG. (in the positive direction) by a predetermined amount (hereinafter referred to as offset amount) d1. Further, the centers of the first absorption section 91, the second absorption section 92, and the wiring 47 are shifted to the right by offset amounts d2, d3, and d4, respectively, with respect to the boundary between the focus detection pixel 11 and the imaging pixel 12. To position. The offset amount d1 of the microlens 44, the offset amount d2 of the first absorption section 91, the offset amount d3 of the second absorption section 92, and the offset amount d4 of the wiring 47 satisfy d4≦d3≦d2≦d1. Thereby, the amount of light that enters the photoelectric conversion unit 42 via the imaging optical system 31 of the camera 1 can be increased.

In the third pixel group 403 in FIG. 11A, part of the ghost light 71 that has passed through the microlens 44 and color filter 51 of the focus detection pixel 11 is transmitted to the boundary between the focus detection pixel 11 and the G pixel 12. The light enters a first absorption section 91 and a second absorption section 92 provided in the. A part of this ghost light is absorbed by the first absorption section 91 and the second absorption section 92.

In the second pixel group 402 shown in FIG. is incident on and absorbed. In this way, even in the left end region 102, leakage of light to adjacent pixels is suppressed. Therefore, it is possible to prevent deterioration in image quality and focus detection accuracy from occurring.

FIG. 12 is a diagram showing an example of the configuration of pixels in the right end region 103 of the image sensor 22 according to the second embodiment. The microlens 44, color filter 51, first absorption section 91, second absorption section 92, and wiring 47 of the pixel in the right end region 103 are located on the center side of the pixel region 100 (in the negative X-axis direction) with respect to the rest of the pixel. side). The microlens 44, the first absorption section 91, the second absorption section 92, and the wiring 47 of each pixel are given an offset amount similar to the offset amounts d1 to d4 in the direction opposite to the shift direction shown in FIG. .

In the third pixel group 403 in FIG. 12A, part of the ghost light 71 that has passed through the microlens 44 and color filter 51 of the focus detection pixel 11 is transmitted to the boundary between the focus detection pixel 11 and the G pixel 12. The light enters and is absorbed by the first absorption section 91 and the second absorption section 92 provided in the. In the second pixel group 402 in FIG. 12(b), part of the ghost light 71 that has passed through the microlens 44 and color filter 51 of the B pixel 12 is transmitted to the first absorption section 91 and the second absorption section 92. is incident on and absorbed. In this way, even in the right end region 103, leakage of light to adjacent pixels is suppressed. Therefore, it is possible to prevent deterioration in image quality and focus detection accuracy from occurring.

According to the embodiment described above, the following effects can be obtained.
(1) The image sensor 22 includes a first pixel ( For example, an imaging pixel), a second filter that transmits light in a second wavelength range different from the first wavelength range among the incident light, and a second photoelectric conversion unit that photoelectrically converts the light that has passed through the second filter. A planarization layer (a second a flattening layer 82), and a first absorption section 91 that is formed between the first filter and the second filter and absorbs a part of the incident light. In this embodiment, the first absorption section 91 is provided between adjacent color filters 51. Therefore, light leakage to adjacent pixels is suppressed, and deterioration in image quality and focus detection accuracy can be prevented.

(2) The image sensor 22 includes a second absorption section 92 that is formed in a flattening layer (second flattening layer 82) between the first pixel and the second pixel and absorbs a part of the incident light. . In this embodiment, the second absorption section 92 is provided within the second planarization layer 82 and between adjacent pixels. Therefore, light leakage to adjacent pixels is suppressed, and deterioration in image quality and focus detection accuracy can be prevented.

(Third embodiment)
An imaging device according to a third embodiment will be described with reference to the drawings. FIG. 13 is a diagram showing an example of the configuration of pixels of the image sensor 22 according to the third embodiment. FIG. 13 shows two imaging pixels 12 among the plurality of pixels provided in the imaging element 22. In addition, in the drawings, the same reference numerals are given to the same or corresponding parts as in the first embodiment, and differences will be mainly explained.

As shown in FIGS. 13A and 13B, the imaging pixel 12 is provided with a memory section 48 that stores charges (signal charges) generated by the photoelectric conversion section 42. The memory section 48 is also an accumulation section (holding section) that accumulates (holds) the charges generated by the photoelectric conversion section 42 .

More specifically, the imaging pixel 12 includes, for example, a photoelectric conversion section 42, a first transfer section, a memory section 48, a second transfer section, a floating diffusion (FD), and an amplification section. The first transfer section, the second transfer section, and the amplification section are each composed of transistors. The first transfer section transfers the charges photoelectrically converted by the photoelectric conversion section 42 to the memory section 48 . The memory section 48 stores the charges transferred by the first transfer section. The second transfer unit transfers the charges stored in the memory unit to the FD. The amplifier section amplifies and outputs a signal based on the charges accumulated in the FD.

The image sensor 22 can temporarily store charges generated by the photoelectric conversion section 42 of each pixel in the memory section 48 of each pixel. Therefore, the image sensor 22 can perform a so-called global shutter operation in which all pixels perform photoelectric conversion at the same time and charge is transferred from the photoelectric conversion section 42 to the memory section 48 at the same time in all pixels. .

The absorption section 93 is made of an organic material and has a property of absorbing light in the visible wavelength range. The absorption section 93 is provided in the second planarization layer 82 so as to cover the memory section 48 of the imaging pixel 12 . Therefore, a portion of the ghost light incident on the imaging pixel 12 is absorbed by the absorption section 93. This can prevent ghost light from entering the memory section 48 and mixing noise components into the signal charges of the memory section 48 . As a result, it is possible to prevent the image quality of the image generated using the imaging signal from deteriorating. Further, as in the first and second embodiments described above, the absorption section 93 suppresses light leakage to adjacent pixels. Therefore, in this embodiment, by providing the absorption section 93 as described above, it is possible to suppress noise from being mixed into the signal of the memory section 48 and to suppress leakage of light to adjacent pixels.

Note that the absorption section 93 may be arranged for each of a plurality of pixels and shared by the plurality of pixels. More specifically, the absorption section 93 may be provided to cover the memory section 48 of each adjacent pixel. For example, the absorption section 93 is provided to cover the memory section 48 of the imaging pixel 12 and the memory section 48 of the focus detection pixel 11 adjacent thereto.

Note that the absorption section 93 may be provided between adjacent color filters 51 and on the second flattening layer 82, similarly to the absorption section according to the first embodiment. Further, instead of the absorbing portion 93, first and second absorbing portions may be provided similarly to the absorbing portion according to the second embodiment. In this case, the first absorption section may be arranged between adjacent color filters 51, and the second absorption section may be arranged within the second flattening layer 82. Both the first and second absorption sections may be arranged to cover the memory section 48 of each adjacent pixel. Further, one of the first and second absorption sections may be arranged to block light from entering at least one of the memory sections 48 of each of two adjacent pixels.

Further, as shown in FIGS. 14A and 14B, the absorption section 93 may be provided so as to cover all regions of the imaging pixel 12 other than the photoelectric conversion section 42. Thereby, ghost light incident on the imaging pixel 12 can be suppressed from leaking to the memory section 48, the above-mentioned FD, the first transfer section, the second transfer section, the amplification section, etc. Therefore, the quality of the image based on the imaging signal can be improved.

FIG. 15 shows another configuration example of the imaging pixel 12 of the imaging device 22 according to the third embodiment. In the example shown in FIG. 15, the imaging pixel 12 has a waveguide 49 provided in the wiring layer 112. The waveguide 49 is made of an insulating material such as a metal oxide, and guides the light incident on the waveguide 49 to the photoelectric conversion section 42 . The light flux that has passed through the color filter 51 of the imaging pixel 12 is focused on the photoelectric conversion section 42 by the waveguide 49. Therefore, the amount of light that enters the photoelectric conversion unit via the imaging optical system 31 can be increased.

In FIG. 15, the absorption section 93 is provided in the second planarization layer 82 so as to surround the waveguide 49 on all sides. Therefore, a portion of the ghost light incident on the imaging pixel 12 is absorbed by the absorption section 93. This can prevent ghost light from entering the photoelectric conversion unit 42 via the waveguide 49. As a result, it is possible to improve the image quality of the image based on the imaging signal.

Although the configuration of the imaging pixel 12 has been described with reference to FIGS. 13 to 15, the focus detection pixel can also have an absorbing section arranged in the same way as the imaging pixel 12. Thereby, it is possible to suppress noise from being mixed into the focus detection signal, and it is possible to prevent the accuracy of focus detection from decreasing.

The following modifications are also within the scope of the invention, and it is also possible to combine one or more of the modifications with the embodiments described above.

(Modification 3)
In the embodiment described above, an example was described in which an absorption section is provided in a pixel within the pixel region 100 (see FIG. 4). However, the absorption portion may also be arranged outside the pixel region 100. For example, the absorption section may be arranged in an OB (optical black) pixel that is a pixel in a light-shielded state, a peripheral circuit such as an analog-to-digital conversion circuit, or the like. This peripheral circuit includes a readout section (readout section) that reads out pixel signals. The readout section may be provided for each pixel or for each plurality of pixels. Note that the OB pixels are used for detecting dark current components and the like.

FIG. 16 is a diagram illustrating an example of the configuration of pixels of an image sensor according to Modification 3. FIG. 16 shows a configuration example of one imaging pixel 12 among the plurality of pixels in the pixel area 100 and one OB pixel 14 among the plurality of OB pixels 14 outside the pixel area. Outside the pixel region, the wiring (inter-pixel light shielding section) 47 is formed so as to cover all the OB pixels 14 provided outside the pixel region and the peripheral circuits. Further, the absorption section 90 is also formed to cover all the OB pixels 14 provided outside the pixel region and the peripheral circuits. Light entering the OB pixel 14 and the peripheral circuit area is blocked by the absorption section 90 and the wiring 47. Therefore, light shielding performance can be improved. Since ghost light is suppressed from entering the readout section described above, it is possible to prevent, for example, a shift in the timing at which the readout section reads out pixel signals.

Note that instead of the absorbent section 90, first and second absorbent sections may be provided, similar to the absorbent section according to the second embodiment. In this case, one of the first and second absorption sections may be provided to cover the OB pixel 14 and the peripheral circuit. For example, one of the first and second absorption sections may be provided to block light from reaching the readout section.

(Modification 4)
FIG. 17 is a diagram illustrating a configuration example of a pixel of an image sensor according to modification example 4. The image sensor according to Modification 4 is a back-illuminated image sensor. The image sensor includes a substrate 111, a first wiring layer 113, a second wiring layer 114, and a support substrate 120. The first wiring layer 113 is laminated on one side of the substrate 111, and the second wiring layer 114 is laminated on the other side of the substrate 111. The support substrate 120 is made of a semiconductor substrate, a glass substrate, or the like. In FIG. 16, light from a subject enters in the positive direction of the Z-axis in FIG. The absorption section 90 is provided, for example, within the second planarization layer 82 and at the boundary between adjacent pixels.

Generally, in the case of a back-illuminated image sensor, the distance between the microlens 44 and the photoelectric conversion section 42 is relatively short. Therefore, ghost light having a larger incident angle may be incident on the pixels of the image sensor on the back-illuminated side than in the case of the image sensor on the front-illuminated side. However, even in the case of a back-illuminated image sensor, by arranging the absorption section 90, it is possible to prevent ghost light from leaking to adjacent pixels. Further, as shown in FIG. 17, in the case of a back-illuminated image sensor, the absorption section 90 is arranged at a position relatively closer to the photoelectric conversion section 42, compared to the case of FIG. Therefore, light leaking from a certain pixel to the photoelectric conversion section 42 of the adjacent pixel can be efficiently reduced.

(Modification 5)
In the embodiment described above, an example has been described in which the W color filter 51 is arranged in the focus detection pixels 11 and 13, but the present invention is not limited thereto. For example, a G color filter may be arranged as the color filter 51 in the focus detection pixels 11 and 13.

(Modification 6)
In the embodiment described above, a case has been described in which primary color (RGB) color filters are used in the image sensor 22, but complementary color (CMY) color filters may be used.

(Modification 7)
In the embodiments described above, an example in which a photodiode is used as the photoelectric conversion section has been described. However, a photoelectric conversion film may be used as the photoelectric conversion section.

(Modification 8)
In the embodiment described above, an example in which one photoelectric conversion unit is arranged in one pixel has been described, but the configuration of the pixel is not limited to this. The pixel structure may have two or more photoelectric conversion units per pixel.

(Modification 9)
The image pickup device and image pickup device described in the above embodiments and modifications are applicable to cameras, smartphones, tablets, cameras built into PCs, in-vehicle cameras, cameras mounted on unmanned aircraft (drones, radio-controlled aircraft, etc.), etc. may be done.

Although various embodiments and modifications have been described above, the present invention is not limited to these. Other embodiments considered within the technical spirit of the present invention are also included within the scope of the present invention.

DESCRIPTION OF SYMBOLS 1... Imaging device, 2... Camera body, 3... Interchangeable lens, 21... Body control part, 21a... Image data generation part, 21b... Focus detection part, 22... Imaging element, 31... Imaging optical system, 42... Photoelectric conversion part , 44... Microlens, 51... Color filter, 81... First flattening layer, 82... Second flattening layer, 90... Absorption section, 91... First absorption section, 92... Second absorption section, 111...Substrate, 112...Wiring layer

Claims (14)

It has a first filter that transmits part of the light that has passed through the optical system, and a first photoelectric conversion section that photoelectrically converts the light that has passed through the first filter, and is used for focus detection of the optical system. a first pixel that outputs a signal;
It has a second filter that transmits part of the light that has passed through the optical system, and a second photoelectric conversion section that photoelectrically converts the light that has passed through the second filter, and outputs a signal used for image generation. a second pixel,
a planarization layer provided between the first filter and the second filter, and a semiconductor substrate on which the first photoelectric conversion section and the second photoelectric conversion section are provided;
A portion is provided between the first filter and the second filter, and another portion is provided between the first pixel and the second pixel in the planarization layer, or the first a first absorption part that is a black filter that is provided between the filter and the second filter and on the flattening layer and absorbs a part of the incident light;
A black filter is provided between the first pixel and the second pixel in the flattening layer and absorbs a part of the incident light, and the first absorption filter is provided in the plane intersecting the direction in which the light is incident. a second absorption part larger than the area of the part;
An imaging device comprising: The image sensor according to claim 1,
In the image sensor, the area of the first absorption section is smaller on the first filter or the second filter side than on the flattening layer side in a plane intersecting a light incident direction. In the image sensor according to any one of claims 1 to 2,
In the imaging device, the length of the first absorption section is shorter on the first filter or the second filter side than on the flattening layer side in a direction intersecting a light incident direction. In the image sensor according to any one of claims 1 to 3,
The first absorption section is an image sensor that absorbs a part of the light incident on at least one of the first filter and the second filter. In the image sensor according to any one of claims 1 to 4,
a reading unit that reads out at least one of the first pixel signal and the second pixel signal;
An imaging device comprising: a second absorption section that absorbs a portion of light incident on the reading section. In the image sensor according to any one of claims 1 to 5,
The first pixel includes a first accumulation section that accumulates charges photoelectrically converted by the first photoelectric conversion section, and a first transfer section that transfers the charges accumulated in the first accumulation section,
The second pixel includes a second accumulation section that accumulates charges photoelectrically converted by the second photoelectric conversion section, and a second transfer section that transfers the charges accumulated in the second accumulation section,
An image sensor including a third absorption section that absorbs light incident on the first accumulation section and the second accumulation section. The image sensor according to claim 1 ,
The length of the first absorption section is shorter than the length of the second absorption section in a direction intersecting a direction in which light is incident. The image sensor according to claim 7 ,
The first absorption section and the second absorption section are an image sensor that absorbs part of the light that is incident on at least one of the first filter and the second filter. The image sensor according to claim 7 or 8 ,
comprising a readout unit that reads out at least one of the first pixel signal and the second pixel signal,
An image sensor including a third absorption section that absorbs light incident on the reading section. The image sensor according to any one of claims 7 to 9 ,
The first pixel includes a first accumulation section that accumulates charges photoelectrically converted by the first photoelectric conversion section, and a first transfer section that transfers the charges accumulated in the first accumulation section,
The second pixel includes a second accumulation section that accumulates charges photoelectrically converted by the second photoelectric conversion section, and a second transfer section that transfers the charges accumulated in the second accumulation section,
One of the first absorption section and the second absorption section is an image sensor provided to block light from at least one of the first accumulation section and the second accumulation section. The image sensor according to any one of claims 1 to 10 ,
The first filter and the second filter are image sensors that transmit light in a first wavelength range among incident light. The image sensor according to any one of claims 1 to 11 ,
The first filter transmits light in a first wavelength range among the incident light,
The second filter is an image sensor that transmits light in a second wavelength range different from the first wavelength range among the incident light. The image sensor according to any one of claims 1 to 12 ,
The first filter and the second filter transmit light in different wavelength ranges, and one wavelength range includes the other wavelength range. An image sensor according to any one of claims 1 to 13 ,
an image generation unit that generates image data based on a signal output from the image sensor ;

Images