JP7372384B1 - Substrate processing apparatus and method - Google Patents

Abstract

The present invention provides a substrate processing method that suppresses unnecessary additional reactions between a developer and a photoresist film and prevents the generation of photoresist film residues caused by the additional reactions. The substrate processing method includes: supplying an organic developer onto the substrate while rotating the substrate at a first rotation speed; and rotating the substrate at a second rotation speed lower than the first rotation speed. supplying a non-polar rinsing liquid to the substrate to replace the organic developer with the non-polar rinsing liquid; and supplying the non-polar rinsing liquid while rotating the substrate at a third rotation speed higher than the second rotation speed. The method may include continuing to supply the non-polar rinsing liquid while rotating the substrate at a fourth rotation speed between the second rotation speed and the third rotation speed. [Selection diagram] Figure 5

Description

The present invention relates to a substrate processing apparatus and method.

When manufacturing a semiconductor device or a display device, various processes such as photography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed. Here, the photographic process includes coating, exposure, and development processes. Applying a photosensitive liquid onto the substrate (i.e., coating process), exposing the circuit pattern on the substrate on which the photosensitive film is formed (i.e., exposing process), and selectively developing the exposed areas of the substrate. (i.e., development process). After that, the developer used in the development process is removed from the substrate, and then the substrate is dried.

The problem to be solved by the present invention is to provide a substrate processing apparatus and method that suppresses unnecessary additional reactions between a developer and a photoresist film and prevents the generation of photoresist film residues caused by the additional reactions. .

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

One aspect of the substrate processing method of the present invention for achieving the above object is to supply an organic developer onto the substrate while rotating the substrate at a first rotation speed, and to rotate the substrate at the first rotation speed. supplying a non-polar rinsing solution to the substrate to replace the organic developer with the non-polar rinsing solution while rotating the substrate at a second, lower number of rotations; and supplying the non-polar rinsing liquid while rotating the substrate at a fourth rotation speed between the second rotation speed and the third rotation speed.

The substrate is coated with a negative photoresist and then exposed to light, and the organic developer is n-butyl acetate. The vapor pressure of the non-polar rinsing liquid is lower than the vapor pressure of the organic developer. Alternatively, the viscosity of the non-polar rinsing liquid may be higher than the viscosity of the organic developer.

The non-polar rinsing liquid includes at least one of nonane, decane, undecane, and dodecane.

The method may further include supplying an organic developer onto the substrate while rotating the substrate at a second number of rotations, before supplying the non-polar rinsing liquid to the substrate while rotating the substrate at a second number of rotations. .

The time for rotating the substrate at the second rotation speed may be longer than the time for rotating the substrate at the third rotation speed.

The first nozzle for supplying the organic developer and the second nozzle for supplying the non-polar rinsing liquid may be provided in one arm.

The method may further include moving the substrate, with the non-polar rinsing liquid remaining on the substrate, to a process chamber for processing with a supercritical fluid.

Another aspect of the substrate processing method of the present invention for achieving the above object is a first step of supplying an organic developer while rotating the substrate on which the exposed photoresist film is formed at a first rotation speed. a second step of decelerating the substrate to a second rotational speed lower than the first rotational speed; increasing the substrate to a third rotational speed higher than the second rotational speed; In the second or third step, a rinsing liquid is supplied onto the substrate to replace the organic developer with the rinsing liquid.

The substrate is coated with a negative photoresist and then exposed to light, and the organic developer may be n-butyl acetate.

The vapor pressure of the rinsing liquid may be less than the vapor pressure of the organic developer, or the viscosity of the rinsing liquid may be higher than the viscosity of the organic developer.

One aspect of the substrate processing apparatus of the present invention for achieving the other objects described above is a first process chamber that processes the substrate with an organic developer, a second process chamber that processes the substrate with a supercritical fluid, and a second process chamber that processes the substrate with a supercritical fluid. a transfer robot for moving the substrate from a first process chamber to the second process chamber, the first process chamber supplying an organic developer onto the substrate while rotating the substrate at a first rotation speed; While rotating the substrate at a second rotational speed lower than the first rotational speed, a rinsing liquid is supplied to the substrate to replace the organic developer with the rinsing liquid, and the substrate is rotated at a second rotational speed higher than the second rotational speed. The method includes supplying the rinsing liquid while rotating the substrate at three rotational speeds, and rotating the substrate at a fourth rotational speed between the second rotational speed and the third rotational speed.

The first process chamber supplies an organic developer onto the substrate while rotating the substrate at a second rotation speed, before supplying a rinsing liquid to the substrate while rotating the substrate at a second rotation speed. obtain.

The time for rotating the substrate at the second rotation speed may be longer than the time for rotating the substrate at the third rotation speed.

The first nozzle for supplying the organic developer and the second nozzle for supplying the rinse liquid may be provided in one arm.

Another aspect of the substrate processing apparatus of the present invention for achieving the above other objects is a first process chamber that supplies an organic developer onto a first substrate, and a first process chamber that processes the first substrate with a supercritical fluid. a second process chamber; a first transfer robot that transfers the first substrate from the first process chamber to the second process chamber with an organic developer remaining on the first substrate; a third process chamber that supplies the organic developer and replaces the organic developer on the second substrate with a non-polar rinsing liquid; a fourth process chamber that processes the second substrate with a supercritical fluid; a second transfer robot configured to transfer the second substrate from the third process chamber to the fourth process chamber with the non-polar rinsing liquid remaining on the second substrate; The first residual amount of liquid may be greater than the second residual amount of non-polar rinsing liquid on the second substrate.

The step of forming a first liquid film for leaving a first residual amount of an organic developer on the first substrate in the first process chamber includes rotating the first substrate at a first rotation speed; forming a second liquid film to leave a second residual amount of non-polar rinsing liquid on the second substrate in the three-step chamber includes rotating the second substrate at a second rotation speed; The rotation speed may be lower than the second time.

The first substrate and the second substrate are coated with a negative photoresist and exposed to light, and the organic developer is n-butyl acetate.

The vapor pressure of the non-polar rinsing liquid may be less than the vapor pressure of the organic developer, or the viscosity of the non-polar rinsing liquid may be higher than the viscosity of the organic developer.

Specific details of other embodiments are included in the detailed description and drawings.

FIG. 1 is a plan view for explaining a substrate processing apparatus according to some embodiments of the present invention. 2 is a conceptual diagram for explaining an example of the process chamber of FIG. 1. FIG. 3 is a perspective view for explaining the nozzle structure of FIG. 2. FIG. 2 is a conceptual diagram for explaining another example of the process chamber of FIG. 1. FIG. 1 is a flowchart illustrating a substrate processing method according to some embodiments of the present invention. FIG. 3 is a diagram for explaining the wetting volume of decane and the liquid film maintenance time depending on the rotation speed. FIG. 3 is a diagram for explaining the amount of wetting of n-butyl acetate and the liquid film maintenance time depending on the rotation speed. FIG. 1 is a diagram for explaining a substrate processing method according to an embodiment of the present invention. FIG. 7 is a diagram for explaining a substrate processing method according to another embodiment of the present invention. FIG. 7 is a diagram for explaining a substrate processing method according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the invention, as well as the manner in which they are achieved, will become clearer with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be embodied in various forms different from each other, and the present embodiments are merely intended to complete the disclosure of the present invention, and the present invention is not limited to the embodiments disclosed below. It is provided so that the scope of the invention will be fully known to those skilled in the art, and the invention is defined solely by the scope of the claims. The same reference numerals refer to the same elements throughout the specification.

The spatially relative terms "below," "beneath," "lower," "above," "upper," etc. are indicated in the drawings. It is used to easily describe the correlation between one element or component and another element or component. Spatially relative terms are to be understood as including different orientations of the element in use or operation in addition to the orientation shown in the drawings. For example, if the elements shown in the drawings are turned over, elements labeled "below" or "beneath" other elements would be placed "above" the other elements. obtain. Thus, the exemplary term "below" may include both directions below and above. Elements may be oriented in other directions, so spatially relative terms can be interpreted in terms of orientation.

Of course, although first, second, etc. are used to describe various elements, components and/or sections, these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component, or section from another element, component, or section. Therefore, it goes without saying that the first element, first component or first section mentioned below may be the second element, second component or second section within the technical spirit of the present invention.

The terminology used herein is for the purpose of describing the embodiments and is not intended to limit the invention. In this specification, the singular term also includes the plural term unless the context specifically indicates otherwise. As used in the specification, "comprises" and/or "comprising" means that the referenced component, step, act, and/or element may be associated with one or more other components, steps, acts, and/or elements. or does not exclude the presence or addition of elements.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the meaning commonly understood by one of ordinary skill in the art to which this invention belongs. used. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or unduly unless explicitly specifically defined.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, the same or corresponding components will be given the same reference numerals regardless of the drawing symbols. , redundant explanation regarding this will be omitted.

FIG. 1 is a plan view for explaining a substrate processing apparatus according to some embodiments of the present invention.

Referring to FIG. 1, a substrate on which an exposed photoresist film is formed is transported into a substrate processing apparatus, where a developing process using a developer and a drying process using a supercritical fluid are performed. be exposed.

A substrate processing apparatus according to some embodiments of the present invention includes an index module 1000 and a process module 2000.

The index module 1000 receives a substrate W from the outside and transmits the substrate W to the process module 2000. The substrate W may have an exposed photoresist film formed thereon. For example, the photoresist film may be a negative photoresist film (NTD, Negative Tone Develop) or a positive photoresist film (PTD, Positive Tone Develop), and may be a chemically amplified photoresist film (CAR) or a non-chemically amplified photoresist film (CAR). Non-CAR, Non-Chemically Amplified Resist).

Indexing module 1000 may be an equipment front end module (EFEM) and includes a load port (1100) and a transfer frame 1200.

A container C containing a substrate W is placed in the load port 1100. As the container C, a front opening unified pod (FOUP) is used. The container C can be carried into the load port 1100 from the outside or carried out from the load port 1100 to the outside by an overhead transfer (OHT).

The transfer frame 1200 transfers the substrate W between the container C placed in the load port 1100 and the process module 2000. Transfer frame 1200 may include an indexing robot that moves on indexing rails.

The process module 2000 includes a buffer chamber 2100, a transfer chamber 2200, and a plurality of process chambers 2300.

The buffer chamber 2100 provides a space where the substrate W transferred between the index module 1000 and the process module 2000 temporarily remains. Multiple buffer slots may be located in buffer chamber 2100. For example, the indexing robot of the transfer frame 1200 can pull the substrate W from the container C and place it in a buffer slot.

The transfer robot of the transfer chamber 2200 may pull out the substrate W placed in the buffer slot and transfer it to a previously set process chamber (eg, PC1) among the plurality of process chambers 2300. Also, the transfer robot of the transfer chamber 2200 may transfer from any one process chamber (eg, PC1) of the plurality of process chambers 2300 to another process chamber (eg, PC2).

The plurality of process chambers 2300 may be arranged in a row, stacked one on top of the other, or a combination thereof. As illustrated, some process chambers PC1 and PC2 and other process chambers PC3 and PC4 may be disposed on both sides of the transfer chamber 2200. The arrangement of the plurality of process chambers 2300 is not limited to the example described above, and can be changed in consideration of the footprint of the substrate processing apparatus and process efficiency.

In an already set process chamber (for example, PC1) among the plurality of process chambers 2300, the substrate W is developed with an organic developer (for example, n-butyl acetate (nBA, n-butyl acetate)), and then the organic developer is is replaced with a non-polar rinsing liquid (eg, decane). Next, in another process chamber (eg, PC2), the non-polar rinsing liquid is removed by supercritical fluid. Specific steps will be described later using FIGS. 5 to 10.

FIG. 2 is a conceptual diagram for explaining an example of the process chamber shown in FIG. FIG. 3 is a perspective view for explaining the nozzle structure of FIG. 2. FIG.

Referring to FIGS. 2 and 3, a support unit 110 that supports a substrate W is disposed within a process chamber (eg, PC1). The support unit 110 can rotate the substrate W at a preset speed (ie, a preset rotational speed).

Further, a first nozzle structure 120 for supplying an organic developer and a non-polar rinsing liquid onto the substrate W is located around the support unit 110.

The organic developer can be, but is not limited to, n-butyl acetate (nBA). Any organic developer can be used as long as it is a substance capable of developing a negative photosensitive film.

The non-polar rinsing liquid may be at least one of alkane-based solvents such as nonane, decane, undecane, and dodecane, but is not limited thereto. The non-polar rinsing solution can be easily substituted for the organic developer and can be any material that does not react with the negative photosensitive film.

The first nozzle structure 120 may be pivotable between a supply position and a standby position, for example. When the first nozzle structure 120 is in the supply position, an organic developer and/or a non-polar rinse liquid may be supplied onto the substrate W. For example, the first nozzle structure 120 may be in a standby position while the substrate W is being pulled into/out of the process chamber PC1.

The first nozzle structure 120 may include an arm (123), a first nozzle 121 for supplying an organic developer, and a second nozzle 122 for supplying a non-polar rinsing liquid. Since the first nozzle 121 and the second nozzle 122 are formed by one first nozzle structure 120 (namely, the arm 123), it is possible to continuously supply the organic developer and the non-polar rinsing liquid onto the substrate W. I can do it.

The first nozzle 121 is fluidly connected to a first reservoir 121a that stores an organic developer. The first valve 121b is disposed between the first nozzle 121 and the first reservoir 121a, and may be controlled on/off by a controller (not shown). The second nozzle 122 is fluidly connected to a second reservoir 122a that stores a non-polar rinse liquid. The second valve 122b is disposed between the second nozzle 122 and the second reservoir 122a, and may be controlled on/off by a controller (not shown).

FIG. 4 is a conceptual diagram for explaining another example of the process chamber shown in FIG. For convenience of explanation, the explanation will focus on the points that are different from the contents explained using FIGS. 2 and 3.

In FIG. 3, the organic developer and the non-polar rinsing solution are supplied by a single first nozzle structure (see 120 in FIG. 2), whereas in FIG. The third nozzle structures 140 supplying polar rinsing liquid are separated/sectioned from each other.

A support unit 110 that supports the substrate W is disposed within the process chamber (eg, PC1). The support unit 110 can rotate the substrate W at a preset speed (ie, a preset rotational speed).

The second nozzle structure 130 can perform rotational movement and can supply organic developer onto the substrate W. The second nozzle structure 130 is fluidly connected to a first reservoir 121a that stores an organic developer. The first valve 121b is disposed between the second nozzle structure 130 and the first reservoir 121a, and may be turned on/off by a controller (not shown).

The third nozzle structure 140 may also undergo rotational movement and may supply non-polar rinsing liquid onto the substrate W. The third nozzle structure 140 is fluidly connected to a second reservoir 122a that stores a non-polar rinsing liquid. The second valve 122b is disposed between the third nozzle structure 140 and the second reservoir 122a, and may be turned on/off by a controller (not shown).

FIG. 5 is a flowchart illustrating a substrate processing method according to some embodiments of the present invention.

Referring to FIG. 5, first, a substrate on which an exposed photoresist film is formed is drawn into a first process chamber (see PC1 in FIG. 1). Here, the photoresist film may be a negative tone develop (NTD) film or a chemically amplified resist film (CAR).

Next, in the first process chamber PC1, the substrate W is treated with an organic developer (S110).

Specifically, an organic developer (for example, n-butyl acetate (nBA)) is supplied onto the substrate W. The exposed photosensitive film is developed using an organic developer. Since a negative photoresist film was used, the parts not exposed to light during the exposure process react with the organic developer and dissolve.

Next, in the first process chamber PC1, the substrate W is treated with a non-polar rinsing liquid (S120).

Specifically, the non-polar rinsing liquid may be at least one of alkane-based solvents such as nonane, decane, undecane, and dodecane. Since the organic developer has been replaced with a non-polar rinse solution, development will no longer proceed. This is because the non-polar rinsing liquid does not react with the photosensitive film.

Next, the substrate W is transferred from the first process chamber PC1 to the second process chamber PC2 (S130).

Specifically, the transfer robot in the transfer chamber 2200 moves the substrate W in which the non-polar rinsing liquid remains from the first process chamber PC1 to the second process chamber PC2. Since the non-polar rinsing liquid does not react with the photoresist film, excessive development will not occur even if the non-polar rinsing liquid is moved while remaining on the substrate W.

The reason why the substrate W is moved while the nonpolar rinsing liquid remains (that is, the substrate W is wet) is to prevent the substrate W from drying out during the movement. If the substrate W is moved in a dry state, foreign matter may fall onto the substrate W, causing defects, and even a weak impact may damage the photoresist film or the film to be etched.

If there is no step of replacing the organic developer with a non-polar rinsing solution (ie, S120), the substrate W in which the organic developer remains is moved from the first process chamber PC1 to the second process chamber PC2. During the transfer, the organic developer continuously reacts with the photosensitive film. Therefore, excessive development occurs and a target photoresist pattern cannot be formed. Excessive development may cause a phenomenon called PR leaning. Furthermore, since the photoresist film is a heavy polymer, photoresist film residue (PR residue) generated during development may remain between patterns. Such photoresist film residue causes defects.

On the other hand, in the substrate processing method according to some embodiments of the present invention, since the organic developer is replaced with a non-polar rinsing solution, excessive development can be prevented and a target photoresist pattern can be formed accurately. .

Next, the substrate W is supercritically dried in the second process chamber PC2 (S140). That is, non-polar fluid is removed using supercritical fluid.

Specifically, supercritical fluids (e.g., carbon dioxide in supercritical state) have high permeability and can effectively remove non-polar rinsing liquid remaining between patterns. .

In the following, with reference to FIGS. 1, 5, 6, and 7, alkane-based solvents such as nonane, decane, undecane, and The use of at least one dodecane will be specifically described.

FIG. 6 is a diagram illustrating the wetting volume of decane and the liquid film maintenance time depending on the rotation speed. FIG. 7 is a diagram for explaining the amount of wetting of n-butyl acetate and the liquid film maintenance time depending on the rotation speed.

Referring to FIG. 6, the rotation speed (RPM) is displayed on the x-axis, and the amount of wetting (unit: g) and the liquid film maintenance time (unit: sec) are displayed on the y-axis.

D1 is a graph showing the drying time of decane. W1 is a graph showing the amount of wetting of decane.

For example, assume that a liquid film maintenance time of approximately 200 seconds is required. As described above, the transfer robot of the transfer chamber 2200 takes out the substrate W from the first process chamber PC1, moves it to the second process chamber PC2, and then inserts the substrate W into the second process chamber PC2. The substrate W must remain wet until it is treated with the supercritical fluid in the second process chamber PC2. That is, a liquid film must be maintained on the substrate W. The time of about 200 seconds may be the time from when the transfer robot of the transfer chamber 2200 starts to take out the substrate W until it is processed by the supercritical fluid.

Referring to D1, the rotation speed R1 of the substrate W must be about 240 RPM in order to maintain a liquid film of about 200 seconds.

Referring to W1, when the rotational speed R1 of the substrate W is about 240 RPM, the wetting amount WT1 of decane is about 1 g.

To summarize, decane is supplied onto the substrate W while rotating the substrate W at 240 RPM, and as a result, about 1 g of decane remains on the substrate W while maintaining a liquid film. About 1 g of decane maintains a liquid film for about 200 seconds.

Referring to FIG. 7, the rotation speed (RPM) is displayed on the x-axis, and the wetting amount (unit: g) and the liquid film maintenance time (unit: sec) are displayed on the y-axis.

On the other hand, D2 is a graph showing the drying time of n-butyl acetate. W2 is a graph showing the amount of wetting of n-butyl acetate.

Referring to D2, the rotation speed R2 of the substrate W must be about 45 RPM in order to maintain a liquid film of about 200 seconds.

Referring to W2, if the rotation speed R1 of the substrate W is about 45 RPM, the wetting amount WT2 of n-butyl acetate is about 7 g.

In summary, n-butyl acetate is supplied onto the substrate W while rotating the substrate W at 45 RPM, and as a result, about 7 g of n-butyl acetate remains on the substrate W while maintaining a liquid film. About 7 g of n-butyl acetate maintains a liquid film for about 200 seconds.

Referring to FIGS. 6 and 7, just about 1 g of butane used as a non-polar rinsing liquid can maintain a liquid film for about 200 seconds. That is, even if butane is used in a much smaller amount than n-butyl acetate, a liquid film maintenance time of about 200 seconds can be achieved. It can also be seen that the amount of butane that has to be removed by the supercritical fluid is very small. Therefore, the processing time using supercritical fluid can be shortened.

The reason why butane has such properties is that it has a lower vapor pressure and/or a higher viscosity than n-butyl acetate. The vapor pressure of n-butyl acetate is 1.413 KPa, while the vapor pressure of butane is 0.199 KPa. The viscosity of n-butyl acetate is 0.69 cP, while the viscosity of butane is 0.92 cP. Since the vapor pressure of butane is relatively low and/or the viscosity of butane is relatively high, drying is slower than n-butyl acetate, which is advantageous for maintaining a liquid film.

Alkane solvents having similar properties to butane include nonane, undecane, and dodecane. For example, dodecane has a vapor pressure of 0.018 Kpa and a viscosity of 1.34 cP. Therefore, at least one of nonane, undecane, and dodecane can be used instead of butane.

In addition, alkane-based solvents such as nonane, decane, undecane, and dodecane have symmetrical molecular structures, so they can be used for the same nonpolar supercritical dioxide. Well extracted by carbon.

Further, the alkane-based solvent described above also has the property of being easily mixed with an organic developer. Therefore, the organic developing solution can be easily replaced with a non-polar rinsing solution.

Considering these points, at least one of nonane, decane, undecane, and dodecane is used as a nonpolar rinsing liquid to replace the organic developer. .

Hereinafter, the organic developer processing step (S110) and the non-polar rinse solution processing step (S120) performed in the first process chamber (eg, PC1) will be described in more detail with reference to FIGS. 8 to 10.

FIG. 8 is a diagram for explaining a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 8, first, the organic developer starts to be supplied onto the substrate W while rotating the substrate W at a low rotation speed (for example, 10 rpm) (S5). The period of rotation at a low rotation speed (S5) may be, for example, 1 to 2 seconds.

As described above, the substrate W may be coated with a negative photoresist film and then subjected to an exposure process. The organic developer is for developing the negative photosensitive film, and may be, for example, n-butyl acetate.

Next, an organic developer is supplied onto the substrate W while rotating the substrate W at a first rotation speed RPM1 (S10).

Specifically, the first rotation speed RPM1 may be, for example, 1000 to 1500 rpm, and the period (S10) in which the motor rotates at the first rotation speed RPM1 may be, for example, 3 to 4 seconds. By rapidly rotating the substrate W in this manner, the organic developer can be spread over the entire surface. Also, in this section (S10), the organic developer contacts the negative photoresist film to proceed with development.

Next, while rotating the substrate W at a second rotation speed RPM2 lower than the first rotation speed RPM1, a non-polar rinsing liquid is supplied to the substrate W to replace the organic developer with the non-polar rinsing liquid (S20).

Specifically, the second rotation speed RPM2 may be, for example, 50 to 150 rpm, and the period of rotation at the second rotation speed RPM2 (S20) may be, for example, 10 seconds.

Following the section (S5) in which the substrate rotates at a low rotation speed, the section (S10) in which it rotates at a first rotation speed RPM1, and also in part of the section (S20) in which it rotates at a second rotation speed RPM2, the organic developer is applied to the substrate. can be supplied on W.

The organic developer supply may be stopped and a non-polar rinse solution may be started dispensing onto the substrate W. As shown by reference numeral d1 in the drawing, the supply of the organic developer can be stopped and the supply of the non-polar rinsing solution can be started at the same time. Alternatively, as shown by reference d2 in the drawing, the stop of the supply of the organic developer and the start of the supply of the non-polar rinsing liquid may partially overlap.

Since the second rotation speed RPM2 is smaller than the first rotation speed RPM1 or the third rotation speed RPM3, the non-polar rinsing liquid can mix well with the organic developer. If the non-polar rinsing liquid is supplied while the substrate W is rotating rapidly, the non-polar rinsing liquid and the organic developer may not mix well because the non-polar rinsing liquid may be bouncing on the surface of the substrate W. .

Further, the section (S20) in which the rotation speed is at the second rotation speed RPM2 is sufficiently long compared to the other sections (eg, S10, S30) so that the non-polar rinsing liquid and the organic developer are sufficiently replaced.

Next, the non-polar rinsing liquid is supplied while rotating the substrate W at a third rotation speed RPM3 higher than the second rotation speed RPM2 (S30).

Specifically, the third rotation speed RPM3 may be, for example, 500 to 600 rpm, and the period (S30) in which the organic developer is supplied at the third rotation speed RPM3 may be, for example, 5 to 6 seconds. The time for rotating at the third rotation speed RPM3 is shorter than the time for rotating at the second rotation speed RPM2. The reason why the substrate W is rotated faster in step S30 than in step S20 is to remove photoresist film reactants generated by reaction with the organic developer.

Next, the substrate is rotated at a fourth rotation speed RPM4 between the second rotation speed RPM2 and the third rotation speed RPM3 (S40).

Specifically, the fourth rotation speed RPM4 may be, for example, 150 to 300 rpm, and the period of rotation at the fourth rotation speed RPM4 (S40) may be, for example, 7 to 8 seconds. The time for rotating at the fourth rotation speed RPM4 is longer than the time for rotating at the third rotation speed RPM3. Step S40 is a step for forming a liquid film of a non-polar rinsing liquid (decane) on the substrate W. For example, as explained using FIG. 6, a decane liquid film of about 1 g can be formed by rotating the substrate W at about 240 rpm. The fourth rotation speed RPM4 for forming a liquid film is smaller than the third rotation speed RPM3 for removing photoresist film reactants.

It is also possible to continue supplying the non-polar rinsing liquid (decane) while rotating at the fourth rotational speed RPM4, as shown by drawing reference numeral e1, and while rotating at the fourth rotational speed RPM4, as shown by drawing reference numeral e2. The supply of non-polar rinsing liquid (decane) may be discontinued. The method indicated by reference numeral e1 in the drawings can relatively increase the amount of wetting of the substrate W, and the method indicated by reference numeral e2 in the drawings can relatively reduce the amount of wetting of the substrate W. That is, whether or not to supply the non-polar rinsing liquid while rotating at the fourth rotation speed RPM4 is determined by how much the amount of wetting is adjusted.

In addition, unlike what is shown in the figure, the substrate W is rotated at the fourth rotation speed RPM4 while supplying the non-polar rinsing liquid only in the front part of the S40 stage, and the non-polar rinsing liquid is interrupted in the rear part and the substrate W is rotated at the fourth rotation speed RPM4. W can be rotated at a fourth rotation speed RPM4.

FIG. 9 is a diagram for explaining a substrate processing method according to another embodiment of the present invention. For convenience of explanation, the explanation will focus on the points that are different from the contents explained using FIG. 8.

In FIG. 8, the organic developer is replaced with a non-polar rinsing liquid while the substrate W is rotated at a second rotation speed RPM2 (step S20). On the other hand, in FIG. 9, the organic developer is replaced with a non-polar rinsing liquid while rotating the substrate W at a third rotation speed RPM3 (step S30).

If the organic developer is replaced with a non-polar rinse solution in step S30, the replacement is not as easy as replacing it in step S20. On the other hand, since development is performed using an organic developer not only in the step S10 but also in the step S20, a sufficient development time can be ensured.

As described above, in the S40 stage, the non-polar solution (decane) can be continuously supplied, stopped, or supplied only for a part of the time.

FIG. 10 is a diagram for explaining a substrate processing method according to another embodiment of the present invention. For convenience of explanation, the explanation will focus on the points that are different from the contents explained using FIGS. 8 and 9.

In FIG. 8, the organic developer is replaced with a non-polar rinsing liquid while the substrate W is rotated at a second rotation speed RPM2 (step S20). On the other hand, in FIG. 10, the organic developer is supplied only up to the step S10, and at the start of the step S20, the supply of the organic developer is interrupted and the supply of the non-polar rinsing solution is started.

As described above, in the S40 stage, the non-polar solution (decane) can be continuously supplied, stopped, or supplied only for a part of the time.

Depending on the process, it is possible to replace the organic developer with a non-polar rinsing solution (see FIGS. 5 and 8 to 10) and to not use the non-polar rinsing solution instead of the organic developer at the same time. Such a case will be explained with reference to the substrate processing apparatus shown in FIG.

Referring to FIG. 1, a first process chamber (eg, CP1) supplies an organic developer onto a first substrate to develop it. In a second process chamber (eg, CP2), the first substrate is treated with a supercritical fluid. The transfer robot in the transfer chamber 2200 transfers the first substrate from the first process chamber CP1 to the second process chamber CP2 with the organic developer remaining on the first substrate. The organic developer is, for example, n-butyl acetate.

On the other hand, the third process chamber (for example, CP3) supplies an organic developer onto the second substrate and replaces the organic developer on the second substrate with a non-polar rinsing solution (see FIGS. 5 and 8 to 10). ). A fourth process chamber (eg, CP4) processes the second substrate with a supercritical fluid. The transfer robot in the transfer chamber 2200 transfers the second substrate from the third process chamber CP3 to the fourth process chamber CP4 with the non-polar rinsing liquid remaining on the second substrate. The organic developer can be, for example, n-butyl acetate and the non-polar rinse can be decane.

As explained using FIG. 6 and FIG. 7, in order to maintain the already set liquid film maintenance time (for example, 200 sec), the amount of wetting of n-butyl acetate is about 7 g, and the amount of wetting of n-butyl acetate is about 7 g. The amount of wetness is approximately 1 g.

Therefore, the first residual amount of the organic developer on the first substrate transferred from the first process chamber CP1 to the second process chamber CP2 is the same as the amount remaining on the second substrate transferred from the third process chamber CP3 to the fourth process chamber CP4. The residual amount of the non-polar rinsing liquid may be greater than the second residual amount of the above non-polar rinsing liquid.

Further, in the step of forming a first liquid film to leave a first residual amount of the organic developer on the first substrate in the first process chamber CP1, the first liquid film is formed while supplying the organic developer to the first substrate. It includes rotating at a first rotation speed for one hour. A second liquid film forming step for leaving a second residual amount of the non-polar rinsing liquid on the second substrate in the third process chamber CP3 is performed while supplying the non-polar rinsing liquid to the second substrate. and rotating at a second rotation speed for a period of 2 hours.

As explained using FIGS. 6 and 7, in order to maintain the already set liquid film maintenance time (for example, 200 seconds), for example, the first substrate is rotated at about 45 RPM in the first process chamber CP1, It can be seen that the second substrate is rotated at about 240 RPM in the third process chamber CP3.

Therefore, the first rotation speed in the first liquid film forming step may be smaller than the second time period in the second liquid film forming step. Note that although this specification mainly describes replacing the organic developer with a non-polar rinse solution, the present invention is not limited to this. That is, any rinsing liquid can be used as long as it can suppress unnecessary additional reactions between the developer and the photosensitive film.

Although the embodiments of the present invention have been described with reference to the above and the accompanying drawings, a person having ordinary knowledge in the technical field to which the present invention pertains will understand that the present invention does not change its technical idea or essential features. It can be understood that it can be implemented in a specific form. Therefore, it should be understood that the above embodiment is illustrative in all respects and not restrictive.

110 Support unit 120 First nozzle structure 121 First nozzle 122 Second nozzle 130 Second nozzle structure 140 Third nozzle structure 1000 Index module 1100 Load port 1200 Transfer frame 2000 Process module 2100 Buffer chamber 2200 Transfer chamber 2300 Process chamber

Claims (14)

A first step of supplying an organic developer onto the substrate while rotating the substrate at a first rotation speed;
a second step of supplying a non-polar rinsing liquid to the substrate to replace the organic developer with the non-polar rinsing liquid while rotating the substrate at a second rotational speed lower than the first rotational speed;
a third step of supplying the non-polar rinsing liquid while rotating the substrate at a third rotation speed higher than the second rotation speed;
a fourth step of rotating the substrate at a fourth rotation speed between the second rotation speed and the third rotation speed ,
A substrate processing method , wherein the first step, the second step, the third step, and the fourth step are performed in this order . The substrate is coated with a negative photoresist film and then exposed to light,
The substrate processing method according to claim 1, wherein the organic developer is n-butyl acetate. 3. The substrate processing method according to claim 2, wherein a vapor pressure of the non-polar rinsing liquid is lower than a vapor pressure of the organic developer. 3. The substrate processing method according to claim 2, wherein the viscosity of the non-polar rinsing liquid is higher than the viscosity of the organic developer. The method of claim 1, wherein the non-polar rinsing liquid includes at least one of nonane, decane, undecane, and dodecane. The method further includes supplying an organic developer onto the substrate while rotating the substrate at a second rotation speed, before supplying a non-polar rinsing liquid to the substrate while rotating the substrate at a second rotation speed. The substrate processing method according to claim 1. The substrate processing method according to claim 1, wherein the time for rotating the substrate at the second rotation speed is longer than the time for rotating the substrate at the third rotation speed. 2. The substrate processing method according to claim 1, wherein the first nozzle for supplying the organic developer and the second nozzle for supplying the non-polar rinsing liquid are provided in one arm. The method of processing a substrate according to claim 1, further comprising moving the substrate with the non-polar rinsing liquid remaining on the substrate to a process chamber for processing with a supercritical fluid. a first step of supplying an organic developer while rotating the substrate on which the exposed photoresist film is formed at a first rotation speed;
a second step of decelerating the substrate to a second rotational speed lower than the first rotational speed;
a third step of increasing the rotation speed of the substrate to a third rotation speed higher than the second rotation speed and removing photoresist film reactants generated by reaction with the organic developer;
The substrate is coated with a negative photoresist film and then exposed to light,
The organic developer is n-butyl acetate,
In the second step , supplying a rinsing liquid onto the substrate to replace the organic developer with the rinsing liquid ,
A substrate processing method, wherein the vapor pressure of the rinsing liquid is lower than the vapor pressure of the organic developer, or the viscosity of the rinsing liquid is higher than the viscosity of the organic developer. a first process chamber for treating the substrate with an organic developer;
a second process chamber for treating the substrate with a supercritical fluid;
a transfer robot that moves the substrate from the first process chamber to the second process chamber,
The first process chamber includes:
A first step of supplying an organic developer onto the substrate while rotating the substrate at a first rotation speed;
a second step of supplying a rinsing liquid to the substrate to replace the organic developer with the rinsing liquid while rotating the substrate at a second rotational speed lower than the first rotational speed;
a third step of supplying the rinsing liquid while rotating the substrate at a third rotation speed higher than the second rotation speed;
a fourth step of rotating the substrate at a fourth rotation speed between the second rotation speed and the third rotation speed ,
A substrate processing apparatus in which the first step, the second step, the third step, and the fourth step are performed in this order . The first process chamber includes:
12. Before supplying the rinsing liquid to the substrate while rotating the substrate at a second rotation speed, an organic developer is supplied onto the substrate while rotating the substrate at a second rotation speed. Substrate processing equipment. The substrate processing apparatus according to claim 11 , wherein the time for rotating the substrate at the second rotation speed is longer than the time for rotating the substrate at the third rotation speed. 12. The substrate processing apparatus according to claim 11 , wherein the first nozzle for supplying the organic developer and the second nozzle for supplying the rinse liquid are provided in one arm.