JP7336306B2 - SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM - Google Patents

Description

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

As a method for drying a substrate after cleaning, a method of supplying a drying liquid to the surface of the substrate, replacing the rinse liquid or the like with the drying liquid, and then removing the drying liquid has been studied (see Patent Document 1). .

JP 2014-90015 A

The present disclosure provides a technique capable of preventing pattern damage during removal of the drying liquid from the substrate surface.

A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holding part that holds a substrate, a drying liquid supply part that supplies a drying liquid to the surface of the substrate held by the substrate holding part, and a surface temperature of the substrate that changes. and a controller for controlling the temperature adjuster. The control unit controls the temperature adjustment unit so as to generate a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate.

According to one exemplary embodiment, it is possible to prevent pattern damage during removal of the drying liquid from the substrate surface.

FIG. 1 is a schematic plan view of a substrate processing system according to one exemplary embodiment. FIG. 2 is a schematic diagram of a substrate processing apparatus according to one exemplary embodiment. FIG. 3 is a flowchart illustrating a substrate processing method according to one exemplary embodiment. 4(a), 4(b), and 4(c) are diagrams for explaining the IPA discharge process by the temperature control unit according to the first embodiment. FIGS. 5(a), 5(b), and 5(c) are diagrams for explaining the IPA discharge process by the temperature control unit according to the modification of the first embodiment. FIGS. 6(a), 6(b), and 6(c) are diagrams for explaining IPA discharge processing by the temperature control unit according to the modification of the first embodiment. 7(a), 7(b), and 7(c) are diagrams for explaining the IPA discharge process by the temperature control unit according to the modification of the second embodiment. FIGS. 8(a), 8(b), and 8(c) are diagrams for explaining the IPA discharge process by the temperature control unit according to the modification of the second embodiment. 9(a), 9(b), and 9(c) are diagrams for explaining the IPA discharge process by the temperature control unit according to the modification of the second embodiment. 10(a), 10(b), and 10(c) are diagrams for explaining the IPA discharge process by the temperature control unit according to the modification of the second embodiment. FIGS. 11(a) and 11(b) are diagrams illustrating another example of IPA discharge processing by the temperature adjustment unit. FIGS. 12(a) and 12(b) are diagrams illustrating another example of IPA discharge processing by the temperature adjustment unit. FIGS. 13(a) and 13(b) are diagrams illustrating another example of the IPA discharge process by the temperature adjustment unit.

Various exemplary embodiments are described in detail below with reference to the drawings. In addition, suppose that the same code|symbol is attached|subjected to the part which is the same or equivalent in each drawing.

<First Embodiment>
[Configuration of substrate processing system]
FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the first embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertically upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3 . The loading/unloading station 2 and the processing station 3 are provided adjacently.

The loading/unloading station 2 includes a carrier placement section 11 and a transport section 12 . A plurality of carriers C for accommodating a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state are mounted on the carrier mounting portion 11 .

The transfer section 12 is provided adjacent to the carrier mounting section 11 and includes a substrate transfer device 13 and a transfer section 14 therein. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. In addition, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism. conduct.

The processing station 3 is provided adjacent to the transport section 12 . The processing station 3 comprises a transport section 15 and a plurality of processing units 16 . A plurality of processing units 16 are arranged side by side on both sides of the transport section 15 .

The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 has a wafer holding mechanism for holding the wafer W. As shown in FIG. In addition, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can rotate about the vertical axis, and transfers the wafer W between the transfer section 14 and the processing unit 16 using the wafer holding mechanism. I do.

The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 under the control of the control section 18 of the control device 4, which will be described later.

The substrate processing system 1 also includes a control device 4 . Control device 4 is, for example, a computer, and includes control unit 18 and storage unit 19 . The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1 . The control unit 18 controls the operation of the substrate processing system 1 by reading and executing programs stored in the storage unit 19 .

The program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier platform 11, and receives the taken out wafer W. It is placed on the transfer section 14 . The wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .

The wafer W loaded into the processing unit 16 is processed by the processing unit 16 , then unloaded from the processing unit 16 by the substrate transfer device 17 and placed on the delivery section 14 . Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C on the carrier placement section 11 by the substrate transfer device 13 .

[Configuration of substrate processing apparatus]
The configuration of the substrate processing apparatus 10 included in the substrate processing system 1 will be described with reference to FIG. The substrate processing apparatus 10 is included in a processing unit 16 of the substrate processing system 1 .

As shown in FIG. 2 , the substrate processing apparatus 10 includes a chamber 20 , a substrate holding mechanism 30 , a processing liquid supply section 40 , a recovery cup 50 and a temperature adjustment section 60 .

The chamber 20 accommodates the substrate holding mechanism 30 , the processing liquid supply section 40 and the recovery cup 50 . An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20 . The FFU 21 has the function of forming a downflow inside the chamber 20 . The FFU 21 forms downflow gas by supplying downflow gas supplied from a downflow gas supply pipe (not shown) into the chamber 20 .

The substrate holding mechanism 30 has a function of holding the wafer W rotatably. The substrate holding mechanism 30 includes a holding portion 31 , a support portion 32 and a driving portion 33 . The holding part 31 holds the wafer W horizontally. The column portion 32 is a member extending in the vertical direction, the base end portion of which is rotatably supported by the drive portion 33, and the tip portion of which supports the holding portion 31 horizontally. The drive section 33 rotates the support section 32 around the vertical axis. The substrate holding mechanism 30 rotates the supporting part 31 supported by the supporting part 32 by rotating the supporting part 32 using the driving part 33, thereby rotating the wafer W held by the supporting part 31. .

The processing liquid supply unit 40 supplies the wafer W with the processing liquid. The processing liquid supply unit 40 is connected to a processing liquid supply source 80 . The processing liquid supply unit 40 has a nozzle 41 for supplying the processing liquid from the processing liquid supply source 80 . The processing liquid supply source 80 has supply sources for a plurality of processing liquids, and changes the processing liquid to be supplied according to the progress of processing of the wafer W. FIG. Further, the nozzle 41 is provided in the head portion of a nozzle arm (not shown) that can rotate in the lateral direction (horizontal direction). The processing liquid can be supplied onto the wafer W while changing the position of the tip of the nozzle 41 by rotating the nozzle arm.

As the treatment liquid supply source 80, a chemical liquid supply source 81, a DIW supply source 82, and an IPA supply source 83 are provided. The chemical liquid supply source 81 supplies one or a plurality of chemical liquids used for processing the surface of the wafer W. FIG. The DIW supply source 82 also supplies DIW (deionized water) used for rinsing the surface of the wafer W. FIG. Also, the IPA supply source 83 supplies IPA for replacing DIW on the surface of the wafer W with IPA (isopropyl alcohol). IPA is a kind of volatile drying liquid and has a lower surface tension than DIW. Therefore, by first replacing the DIW on the surface of the wafer W with IPA and then removing the IPA and drying the wafer W, the pattern on the surface of the wafer W is prevented from being damaged when the wafer W is dried. A chemical liquid supply source 81, a DIW supply source 82, and an IPA supply source 83 are connected to the nozzle 41 through valves V1, V2, and V3, respectively. The processing liquid supplied from the nozzle 41 to the wafer W can be changed by switching the opening and closing of the valves V1, V2, and V3.

Although one nozzle 41 is shown in FIG. 2, a plurality of nozzles may be provided individually according to a plurality of types of processing liquids, or one nozzle may be shared by some processing liquids. may

The movement of the nozzle 41 and the supply/stop of the liquid from each supply source of the treatment liquid supply source 80 are controlled by the controller 18 described above.

The collection cup 50 is arranged to surround the holding portion 31 and collects the processing liquid scattered from the wafer W due to the rotation of the holding portion 31 . A drain port 51 is formed at the bottom of the recovery cup 50 , and the processing liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 through the drain port 51 . An exhaust port 52 is formed at the bottom of the collection cup 50 to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16 .

The temperature adjustment section 60 has a function of controlling the temperature of the surface of the wafer W held on the holding section 31 . In the substrate processing apparatus 10 shown in FIG. 2, the temperature control unit 60 includes a first temperature control unit 61 that controls the temperature of the entire surface of the wafer W on the back surface side of the holding unit 31, and a linear temperature control unit 61 that is provided on the front surface side of the wafer W. and a second temperature adjustment unit 62 of. The temperature distribution on the surface of the wafer W is controlled by heating or cooling by the first temperature adjustment unit 61 and the second temperature adjustment unit 62, respectively. That is, the first temperature adjustment section 61 and the second temperature adjustment section 62 have a function as a substrate heating section or a substrate cooling section.

The first temperature adjustment unit 61 is provided on the rear surface side of the wafer W and controls the temperature of the wafer W as a whole. However, although the first temperature adjustment unit 61 controls the temperature of the wafer W across the surface, it does not heat or cool the wafer W at a uniform temperature. It may be configured to have For example, by dividing the first temperature adjustment unit 61 into a plurality of regions and performing so-called multi-channel control in which independent temperature control is performed for each region, different positions of the wafer W are heated at mutually different heating temperatures. good too. Also, by using multi-channel control, the surface temperature of the wafer W may be configured to have a predetermined gradient. When the wafer W is heated by the first temperature adjuster 61 , a hot plate can be used as the first temperature adjuster 61 . Further, when the wafer W is cooled by the first temperature adjustment section 61 , a cooling plate can be used as the first temperature adjustment section 61 . However, the configuration of the first temperature adjustment section 61 is not limited to these.

The second temperature control unit 62 is a line-type heat source or cooling source that is separated from the surface of the wafer W by a predetermined distance and extends in the lateral direction (horizontal direction) (see also FIG. 4A). FIG. 2 shows a state in which the second temperature control section 62 is arranged so that the longitudinal direction thereof is the Y-axis direction. In addition, the second temperature adjustment section 62 is movable in a lateral direction (horizontal direction) and in a direction crossing (for example, a direction perpendicular to) the longitudinal direction of the second temperature adjustment section 62. . The second temperature adjustment part 62 shown in FIG. 2 can move in the entire region overlapping the surface of the wafer W on the holding part 31 in a plan view by moving along the X-axis direction. With such a configuration, it is possible to heat or cool a specific region of the wafer W (the region adjacent to the second temperature control section 62). When the wafer W is heated by the second temperature control unit 62 , a laser or a lamp can be used as the second temperature control unit 62 . Further, when the wafer W is cooled by the second temperature adjustment section 62 , airflow (cooled gas) can be used as the second temperature adjustment section 62 . However, the configuration of the second temperature adjustment section 62 is not limited to these.

The adjustment of the heating temperature or the cooling temperature by the first temperature adjustment section 61 and the second temperature adjustment section 62, the movement of the second temperature adjustment section 62, and the like are controlled by the control section 18 described above.

[Substrate processing method]
Details of liquid processing performed using the substrate processing apparatus 10 will be described with reference to FIG.

First, when the wafer W loaded into the processing unit 16 by the substrate transfer device 17 is held by the holding portion 31 of the substrate holding mechanism 30, the nozzle 41 is moved to the processing position on the wafer W. As shown in FIG. Then, the wafer W is rotated at a predetermined rotational speed and the chemical liquid is supplied from the nozzle 41 to perform chemical liquid processing (S01). At this time, the column portion 32 and the driving portion 33 shown in FIG. 2 correspond to a rotating mechanism for rotating the wafer W held by the holding portion 31 .

Next, a rinse cleaning process is performed in which the processing liquid supplied from the nozzle 41 is switched to DIW for cleaning (S02). Specifically, DIW is supplied to the wafer W on which the chemical liquid film exists while the wafer W is being rotated. By supplying the DIW, the residue adhering to the wafer W is washed away by the DIW.

After performing the rinse cleaning process for a predetermined time, the supply of DIW from the nozzle 41 is stopped. Next, by supplying IPA from the nozzle 41 to the surface of the rotating wafer W, a replacement process of replacing DIW on the surface of the wafer W with IPA is performed (S03: dry liquid supply step). By supplying IPA to the surface of the wafer W, a liquid film of IPA is formed on the surface of the wafer W. As shown in FIG. As a result, the DIW remaining on the surface of the wafer W is replaced with IPA.

After the DIW on the surface of the wafer W is sufficiently replaced with IPA, the supply of IPA to the wafer W is stopped. Then, a discharge process is performed to discharge the IPA remaining on the surface of the wafer W from the surface of the wafer W (S04: discharge step). By discharging the IPA from the surface of the wafer W, the surface of the wafer W is dried. In the substrate processing apparatus 10 , the discharge of IPA from the surface of the wafer W is facilitated by making the temperature of the surface of the wafer W uneven by the temperature adjustment unit 60 . This point will be described later.

When the surface of the wafer W is dried, the liquid processing for the wafer W is completed. The wafer W is unloaded from the substrate processing apparatus 10 in the reverse order of the loading.

[Discharge treatment]
The IPA discharge process using the temperature control unit 60 will be described with reference to FIGS. 4(a) to 4(c). FIG. 4A is a perspective view for explaining the operation of the second temperature adjuster 62 arranged on the surface of the wafer W. FIG. FIG. 4B is a diagram for explaining temperature control of the wafer W by the first temperature adjustment section 61 and the second temperature adjustment section 62. As shown in FIG. As shown in FIG. 4B, the surface of the wafer W is formed with a predetermined pattern W1 (for example, a resist pattern). 4(c) is a diagram for explaining the temperature of the surface of the wafer W. As shown in FIG.

An IPA liquid film L is formed so as to cover the surface of the wafer W before the IPA discharge process is performed. In the examples shown in FIGS. 4A to 4C, the first temperature adjustment unit 61 functions as a substrate cooling unit that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a constant temperature by the first temperature adjuster 61 . Further, the second temperature adjustment unit 62 functions as a substrate heating unit that heats a predetermined position on the surface of the wafer W from the surface side of the wafer W. As shown in FIG. When IPA is discharged, the second temperature adjustment unit 62 is arranged close to the edge of the wafer W, as shown in FIG. 4B. Then, the surface of the edge portion of the wafer W is heated by the second temperature control unit 62 .

As a result, as shown in FIG. 4C, the temperature of the surface of the wafer W is such that the temperature T1 at the end (periphery) on the side where the second temperature adjustment section 62 is arranged close to the temperature T2 at the other area is higher compared to A drying target area A1 whose temperature changes from T1 to T2 is formed between the edge of the wafer W whose temperature is T1 and the unprocessed area A2 whose temperature is T2. That is, the surface of the wafer W includes a drying target area A1 and an unprocessed area A2 adjacent to the drying target area A1. In other words, the temperature of the edge portion La of the IPA liquid film L near the drying target area A1 is higher than the temperature of the remaining portion Lb of the IPA liquid film L corresponding to the untreated area A2. Therefore, there is a temperature difference between the edge portion La and the remaining portion Lb. Therefore, in the drying target area A1, aggregation of the IPA liquid film L progresses toward the untreated area A2 having a lower temperature.

In the drying target area A1, the temperature of the surface of the wafer W is higher than that in the other areas having the temperature T2. As a result, the film thickness of the IPA liquid film L in the drying target area A1 becomes smaller than the film thickness of the unprocessed area A2 (area having temperature T2). As a result, a difference in surface tension is generated between the IPA liquid film L on the drying target area A1 and the IPA liquid film L on the untreated area A2, and the surface tension of the IPA liquid film L on the drying target area A1 increases to the untreated area. smaller than A2. As a result, a so-called Marangoni convection occurs in which the edge La of the IPA liquid film L in the drying target area A1 is pulled toward the untreated area A2 (right side in FIG. 4). The force generated by this Marangoni convection causes the edge La of the IPA liquid film L to move to the low temperature side.

At this time, when the second temperature adjustment unit 62 is moved in the direction of arrow S as shown in FIG. 4(b), the drying target area A1 moves in the direction of arrow S from the position shown in FIG. 4(c). Aggregation of the IPA liquid film L by Marangoni convection can be promoted by moving the second temperature control unit 62 in accordance with the aggregation speed of the IPA liquid film L (the movement speed of the edge portion La of the IPA liquid film L). and the IPA on the surface of the wafer W can be moved in the arrow S direction. Therefore, the IPA can be discharged from the surface of the wafer W at the downstream end Wa of the wafer W along the arrow S direction.

A region of the surface of the wafer W to which the IPA liquid film L is to be dried is a "drying target region A1". On the other hand, of the surface of the wafer W, the area where the IPA liquid film L is not dried is the "unprocessed area A2". In the example shown in FIG. 4, the drying target area A1 is an area of the surface of the wafer W whose temperature is raised by the second temperature adjustment unit 62, that is, a temperature gradient that changes from temperature T1 to temperature T2 is generated. area. As described above, in the drying target area A1, the edge La of the IPA liquid film L is pulled toward the untreated area A2 by the Marangoni convection, thereby moving the edge of the IPA liquid film L. Therefore, by controlling the position of the drying target area A1 so that a temperature gradient is formed on the surface of the wafer W between the drying target area and other areas, the aggregation of IPA on the surface of the wafer W can be prevented. can proceed.

[Action/effect]
As described above, in the substrate processing apparatus 10, temperature control of the surface of the wafer W by the temperature adjustment unit 60 is used to form a temperature difference between the drying target area A1 and the unprocessed area A2 on the surface of the wafer W. be. Specifically, a temperature difference is generated in the IPA liquid film L so that the temperature of the edge portion La of the IPA liquid film L is high and the temperature of the remaining portion Lb of the IPA liquid film L is low. As a result, Marangoni convection occurs at the edge La of the IPA liquid film L. As shown in FIG. Therefore, the IPA is discharged from the surface of the wafer W while the IPA is agglomerated in a predetermined direction (specifically, the side where the temperature is low) on the surface of the wafer W. As shown in FIG. In this way, by adopting a configuration in which IPA is discharged from the surface of the wafer W by utilizing the aggregation of IPA using the Marangoni convection, it is possible to prevent the pattern from collapsing on the surface of the wafer W when IPA is removed from the surface of the wafer W. can be done.

As a method of removing IPA from the surface of the wafer W, conventionally, a method of rotating the wafer W and using centrifugal force to move the IPA to the outer peripheral side has been used. In this case, the IPA on the surface of the wafer W receives centrifugal force and flows outward. However, when IPA moves under such an external force, a very thin boundary layer is formed at the edge of the IPA liquid film. Since the boundary layer is a region where IPA cannot move due to an external force, the drying of the surface of the wafer W proceeds only by the evaporation of IPA. At this time, the evaporation rate of IPA is not uniform on the wafer W surface. In particular, since a large number of patterns W1 are formed on the surface of the wafer W, variations in the liquid level of the IPA tend to occur depending on the shape of the patterns W1 and the like. If the evaporation of IPA progresses while the IPA liquid level is different, the difference in stress resulting from the liquid level affects the pattern W1, and damage to the pattern W1 such as pattern collapse may progress. .

On the other hand, in the substrate processing apparatus 10, the IPA on the surface of the wafer W is agglomerated by utilizing the Marangoni convection caused by the temperature gradient as described above. That is, when the IPA is moved by utilizing the difference in surface tension instead of being moved by an external force, it is possible to prevent the formation of a boundary layer at the edge La of the IPA liquid film L. That is, since it is possible to eliminate the area where drying by evaporation is performed, it is possible to prevent the pattern W1 from being damaged, such as pattern collapse, when IPA is removed. Since the aspect ratio of the pattern W1 formed on the surface of the wafer W has increased in recent years, the risk of pattern collapse has increased. can reduce the incidence of Note that the temperature gradient on the surface of the wafer W is not necessarily such that the temperature on the side where the IPA liquid film L is present is low and the temperature on the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is not high. good. In addition, it is only necessary that a desired temperature difference is created between the drying target area and the other area (untreated area), and a temperature gradient does not have to be formed in the untreated area A2 (untreated area). .

It should be noted that the surface temperature of the wafer W controlled by the temperature adjustment unit 60 is preferably controlled to such an extent that volatilization of IPA is not promoted. In order to generate Marangoni convection in IPA, the temperature should be higher than normal temperature (about 23° C.), and for example, the temperature adjustment unit 60 can be controlled so that the surface temperature of the wafer W is 30° C. or higher. . If the surface temperature of the wafer W becomes too high, the volatilization of IPA will be accelerated rather than the movement of IPA due to aggregation, increasing the possibility of damage to the pattern.

Further, as shown in FIG. 4, in the substrate processing apparatus 10, the IPA liquid film is formed in the arrow S direction by horizontally moving the second temperature adjustment unit 62 in the arrow S direction from one end of the wafer W. L is aggregated, and IPA is discharged from the downstream end Wa in the arrow S direction. Thus, the IPA moves along the arrow S direction on the wafer W surface. In order to facilitate the movement of the IPA, the wafer W on the holder 31 may be slightly inclined (about 0.1° to 1°) so that the edge Wa faces downward. As a method of tilting the wafer W on the holding portion 31, there is a method of causing a so-called axial misalignment by moving the position of the pillar portion 32 that supports the holding portion 31 in the lateral direction. In this way, by slightly inclining the wafer W, the IPA may be discharged from the edge Wa.

The movement of the second temperature adjuster 62 and the cooling temperature by the first temperature adjuster 61 are changed under the control of the controller 18 . The control section 18 may control each section of the temperature adjustment section 60 by executing a predetermined program based on the liquid characteristics of IPA. Further, the control unit 18 controls the operation of each unit of the temperature adjustment unit 60 on the basis of information regarding the state of the surface of the wafer W acquired by a camera installed in the substrate processing apparatus 10 for observing the surface of the wafer W, for example. may be controlled to change the

<First modification>
Next, a modified example of the temperature adjustment section 60 will be described. As described above, in the vicinity of the edge La of the IPA liquid film L, the temperature on the side where the IPA liquid film L exists is low, and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) is high. Marangoni convection occurs at the edge La of the IPA liquid film L when the temperature gradient is formed to increase. By generating this Marangoni convection, the IPA liquid film L aggregates without forming a boundary layer by utilizing surface tension. Therefore, if the temperature gradient as described above can be formed on the surface of the wafer W, the configuration of the temperature adjustment unit 60 can be changed as appropriate.

FIGS. 5(a) to 5(c) are diagrams showing a temperature adjusting section 60A according to the first modified example. FIGS. 5(a) to 5(c) are diagrams corresponding to FIGS. 4(a) to 4(c). The temperature adjustment section 60A differs from the temperature adjustment section 60 in the following points. That is, in the temperature adjustment unit 60A, a temperature gradient is formed on the front surface of the wafer W by changing the heating temperature of the first temperature adjustment unit 61 provided on the back surface side of the wafer W according to the position. That is, the second temperature adjustment section 62 is not used.

In FIG. 5(b), the heating temperature for each position by the first temperature adjustment unit 61 is indicated by gradation. That is, the heating temperature is controlled by the first temperature adjusting unit 61 so that the heating temperature is high at the left end Wb of the wafer W in the drawing and is lowered toward the right end Wc in the drawing. As a result, as shown in FIG. 5C, the surface temperature of the wafer W forms an overall temperature gradient from the left end Wb in the drawing toward the right end Wc in the drawing. That is, in the example shown in FIG. 5, a temperature gradient is formed in both the drying target area A1 and the untreated area A2.

As a result, as shown in FIG. 5B, Marangoni convection occurs from the edge Wb side of the wafer W, and the IPA liquid film L moves to the edge Wc side. Since the surface temperature of the wafer W has a temperature gradient as a whole, even if the edge La of the IPA liquid film L moves toward the edge Wc, the edge La remains on the drying target area A1. become. Therefore, aggregation and movement of the IPA liquid film L due to Marangoni convection are continued. That is, the temperature gradient formed on the entire surface of the wafer W is such that the temperature on the side where the IPA liquid film L exists is low, and the temperature on the side where the IPA liquid film L does not exist (end Wb side where the wafer W is exposed) is low. functions as a temperature gradient with increasing As a result, the IPA liquid film L moves toward the end portion Wc and is discharged from the end portion Wc side.

As described above, when the heating temperature of the wafer W can be controlled for each different location in the first temperature adjustment section 61, the temperature gradient of the surface of the wafer W can be adjusted without using the combination with the second temperature adjustment section 62. can be provided. Therefore, this temperature gradient may be used to control the movement and discharge of the IPA liquid film L. Even with such a configuration, the occurrence rate of pattern collapse can be reduced.

<Second modification>
FIGS. 6A to 6C are diagrams showing a temperature adjustment section 60B according to a second modification. FIGS. 6(a) to 6(c) are diagrams corresponding to FIGS. 4(a) to 4(c). The temperature adjustment section 60B differs from the temperature adjustment section 60 in the following points. That is, instead of using the first temperature adjustment section 61 provided on the back side of the wafer W, the temperature adjustment section 60B uses the third temperature adjustment section 63 arranged parallel to the second temperature adjustment section 62. Thus, a temperature gradient is formed on the surface of the wafer W. As shown in FIG. That is, the first temperature adjustment section 61 is not used.

In the temperature control section 60B, like the second temperature control section 62, the third temperature control section 63 can also be a line-shaped heat source or cooling source extending in the lateral direction (horizontal direction). In the temperature adjustment section 60B, the second temperature adjustment section 62 is used as a heat source, and the third temperature adjustment section 63 is used as a cooling source. Then, as shown in FIGS. 6A and 6B, the second temperature control section 62 and the third temperature control section 63 extend parallel to each other with the edge La of the IPA liquid film L interposed therebetween. In addition, the third temperature adjustment part 63 is placed on the IPA liquid film L side.

As a result, a drying target area A1 is formed between the second temperature control section 62 and the third temperature control section 63, as shown in FIG. 6(c). Since the third temperature adjustment unit 63 serving as a cooling source is arranged on the IPA liquid film L side, the temperature on the side where the IPA liquid film L exists is low in the drying target area A1, and the temperature on the side where the IPA liquid film L does not exist ( A temperature gradient is formed so that the temperature of the side where the wafer W is exposed is higher. Therefore, the edge portion La of the IPA liquid film L moves toward the third temperature control section 63 side.

At this time, when the second temperature adjustment unit 62 and the third temperature adjustment unit 63 are moved in the direction of the arrow S in correspondence with the movement of the edge La, as shown in FIG. , moves in the direction of arrow S from the position shown in FIG. By moving the second temperature adjustment unit 62 and the third temperature adjustment unit 63 in accordance with the aggregation speed of the IPA liquid film L (the movement speed of the edge La of the IPA liquid film L), the Marangoni convection at the edge La Aggregation of the IPA liquid film L can be advanced. Thereby, the IPA on the surface of the wafer W can be moved in the arrow S direction. Therefore, the IPA can be discharged from the surface of the wafer W at the downstream end Wa of the wafer W along the arrow S direction.

In this manner, even when the temperature adjustment unit 60B is formed by combining the second temperature adjustment unit 62 and the third temperature adjustment unit 63, which are the two line-type temperature adjustment units, it is possible to provide a gradient in the temperature of the surface of the wafer W. can be done. Therefore, this temperature gradient may be used to control the movement and discharge of the IPA liquid film L. Even with such a configuration, the occurrence rate of pattern collapse can be reduced.

<Second embodiment>
Next, a second embodiment of the temperature adjustment section will be described. In the first embodiment, the Marangoni convection of IPA caused by the temperature gradient on the surface of the wafer W is used to promote the movement of the IPA liquid film L in one direction (for example, the direction of arrow S shown in FIG. 4B). explained the case. Therefore, in the first embodiment, IPA is discharged from one end of the wafer W (for example, the end Wa shown in FIG. 4B). In contrast, in the second embodiment, the Marangoni convection of IPA generated by the temperature gradient on the surface of the wafer W is used to promote the movement of the IPA liquid film L from the center of the wafer W to the outer peripheral side. . Since the moving direction of the IPA liquid film L is different from the center toward the outer circumference, the IPA is discharged from any part of the outer circumference of the wafer W. FIG.

It should be noted that forming a temperature gradient on the surface of the wafer W is the same as in the first embodiment. That is, in the vicinity of the edge of the IPA liquid film L, the temperature on the side where the IPA liquid film L exists is low, and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) is high. A temperature gradient is formed, causing Marangoni convection at the edge La of the IPA liquid film L.

FIGS. 7(a) to 7(c) and 8(a) to 8(c) are diagrams showing the temperature adjustment section 70 according to the second embodiment. FIGS. 7(a) to 7(c) and FIGS. 8(a) to 8(c) are diagrams corresponding to FIGS. 4(a) to 4(c), respectively.

The temperature adjustment unit 70 has a first temperature adjustment unit 71 provided on the back surface side of the wafer W and a second temperature adjustment unit 72 provided on the front surface side of the wafer W. As shown in FIG.

The first temperature adjustment section 71 has the same configuration as the first temperature adjustment section 61 of the temperature adjustment section 60 . That is, the first temperature adjustment unit 71 is provided on the rear surface side of the wafer W and controls the temperature of the wafer W as a whole. The first temperature adjustment unit 71 is also divided into a plurality of regions and performs so-called multi-channel control in which the temperature is controlled independently for each region, so that the surface temperature of the wafer W has a predetermined gradient. You may

The second temperature adjustment unit 72 is a spot-type heat source provided at a predetermined distance from the surface of the wafer W in a region including the center thereof (see also FIG. 7A). The second temperature adjuster 72 heats a region of the surface of the wafer W including the center. A laser or a lamp can be used as the second temperature control unit 72 . However, the configuration of the second temperature adjustment section 72 is not limited to these. The “area including the center of the surface of the wafer W” heated by the second temperature adjustment unit 72 is an area including the center of the wafer W and having a diameter smaller than the diameter of the wafer W. FIG. The diameter of the area including the center of the surface of the wafer W can be 30% or less of the diameter of the wafer W, for example.

IPA discharge processing using the temperature control unit 70 will be described. An IPA liquid film L is formed so as to cover the surface of the wafer W before the IPA discharge process is performed. In the examples shown in FIGS. 7A to 7C, the first temperature adjustment unit 71 functions as a substrate cooling unit that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a constant temperature by the first temperature adjuster 71 .

The second temperature adjustment unit 72 functions as a substrate heating unit that heats the vicinity of the center of the wafer W from the surface side of the wafer W. As shown in FIG. When discharging the IPA, the second temperature adjustment unit 62 is arranged near the center of the wafer W to heat the surface of the wafer W near the center, as shown in FIG. 7B.

As a result, as shown in FIG. 7C, the temperature T1 of the area including the center of the surface of the wafer W becomes higher than the temperature T2 of the outer periphery away from the second temperature control section 72 . Therefore, a drying target area A1 that changes from temperature T1 to temperature T2 is formed between an area including the center of wafer W having temperature T1 and an unprocessed area A2 having temperature T2. When the drying target area A1 is formed, the IPA liquid film L aggregates toward the lower temperature area in the drying target area A1. In addition, in the drying target area A1, the temperature gradually decreases toward the outer peripheral side from the temperature T1 of the area including the center of the wafer W.

Marangoni convection due to the difference in surface tension of the IPA liquid film L occurs in the drying target area A1. The force generated by the Marangoni convection causes the edge La (inner peripheral edge) of the IPA liquid film L to move to the low temperature side, that is, to the outer peripheral side of the wafer W. As shown in FIG.

As the aggregation of the IPA liquid film L progresses, the edge La of the IPA liquid film L gradually moves to the outer peripheral side, as shown in FIGS. 8(a) and 8(b). On the other hand, if the cooling of the wafer W by the first temperature adjustment unit 71 and the heating of the area including the center of the wafer W by the second temperature adjustment unit 72 are continued, the wafer W from which the IPA liquid film L is removed (that is, dried) The surface temperature of the region including the center of is constant at temperature T1. On the other hand, the region where the IPA liquid film L remains on the outer peripheral side is maintained at the temperature T2. As a result, as shown in FIG. 8C, an annular drying target area A1 is formed near the edge La of the IPA liquid film L, that is, in the area where the film thickness of the IPA liquid film L changes. Therefore, the edge La moves to the outer peripheral side of the wafer W while the Marangoni convection is formed in the vicinity of the edge La of the IPA liquid film L. As shown in FIG. Further, along with the movement of the edge La, the drying target area A1 also moves to the outer peripheral side. In this manner, the IPA can be discharged from the surface of the wafer W at the outer periphery of the wafer W by continuing the movement of the edge portion La of the IPA liquid film L by the Marangoni convection.

Thus, even when the temperature adjustment unit 70 is used, the drying target area A1 can be formed by utilizing the temperature control of the wafer W surface. That is, in the vicinity of the edge portion La of the IPA liquid film L, the temperature on the side where the IPA liquid film L exists is low, and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) is high. forms a temperature gradient to This causes Marangoni convection at the edge La of the IPA liquid film L. As shown in FIG. As a result, IPA can be discharged from the surface of the wafer W while coagulating the IPA toward the side of the wafer W where the surface temperature is low. Therefore, it is possible to prevent the pattern from collapsing on the surface of the wafer W when the IPA is removed from the surface of the wafer W.

In the temperature adjustment unit 70, the heating temperature of the area including the center of the wafer W by the second temperature adjustment unit 72 may be gradually changed as the edge La of the IPA liquid film L moves to the outer periphery. That is, the heating temperature by the second temperature adjuster 72 can be changed so that the surface temperature of the wafer W in the region where the edge La is formed falls within a temperature range in which Marangoni convection due to the IPA liquid film is likely to occur. In this case, the surface temperature of the area including the center of the wafer W may be higher than the temperature T1. can.

<Third modification>
Next, a modified example of the temperature adjustment section 70 will be described. As described above, in the vicinity of the edge La of the IPA liquid film L, the temperature on the side where the IPA liquid film L exists is low, and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) is high. Marangoni convection occurs at the edge La of the IPA liquid film L when the temperature gradient is formed to increase. By generating this Marangoni convection, the IPA liquid film L aggregates without forming a boundary layer by utilizing surface tension. Therefore, if the temperature gradient as described above can be formed on the surface of the wafer W, the configuration of the temperature adjustment unit 70 can be changed as appropriate.

FIGS. 9(a) to 9(c) and FIGS. 10(a) to 10(c) are diagrams showing a temperature adjusting section 70A according to a third modified example. FIGS. 9(a) to 9(c) and FIGS. 10(a) to 10(c) are diagrams corresponding to FIGS. 4(a) to 4(c), respectively.

The temperature adjustment section 70A differs from the temperature adjustment section 70 in the following points. That is, in the temperature adjustment unit 70A, a temperature gradient is formed on the front surface of the wafer W by changing the heating temperature of the first temperature adjustment unit 71 provided on the back surface side of the wafer W according to the position. That is, the second temperature adjustment section 72 is not used.

In FIG. 9B, the heating temperature for each position by the first temperature adjustment section 71 is shown in gradation. That is, the heating temperature is controlled by the first temperature adjusting unit 71 so that the heating temperature is high near the center of the wafer W and gradually decreases toward the outer periphery. As a result, as shown in FIG. 9C, the surface temperature of the wafer W becomes a temperature gradient from the vicinity of the center of the wafer W toward the outer periphery. That is, a temperature gradient is formed over the entire wafer W surface. In other words, in the example shown in FIG. 9, a temperature gradient is formed in both the drying target area A1 and the untreated area A2.

The temperature adjuster 70</b>A has a gas injection part 73 capable of spraying gas onto the surface of the wafer W instead of the second temperature adjuster 72 . The gas injection unit 73 blows a gas such as nitrogen onto the surface of the wafer W, for example. An opening can be provided in the IPA liquid film L near the center of the wafer W by injecting the gas.

IPA discharge processing using the temperature control unit 70A will be described. An IPA liquid film L is formed so as to cover the surface of the wafer W before the IPA discharge process is performed. As described above, the surface temperature of the wafer W is gradually lowered from the vicinity of the center toward the outer circumference by the first temperature adjustment unit 71 .

Here, an opening of the IPA liquid film L is formed in the vicinity of the center of the wafer W by the gas injection part 73, and the wafer W is exposed in the vicinity of the center. That is, the IPA liquid film L near the center of the wafer W is dried. Therefore, the area near the center of the wafer W becomes the drying target area A1, and the area on the outer peripheral side of the drying target area A1 becomes the unprocessed area A2. As a result, an edge portion La (inner peripheral edge) of the IPA liquid film L is formed at the center of the wafer W. As shown in FIG. When the edge portion La of the IPA liquid film L is formed, the temperature gradient formed over the entire surface of the wafer W is used to promote aggregation of the IPA liquid film L toward the low temperature region. As described above, Marangoni convection due to the difference in surface tension of the IPA liquid film L occurs in the drying target area A1, and the edge La of the IPA liquid film L moves to the low temperature side, that is, to the outer peripheral side of the wafer W. To go.

As the aggregation of the IPA liquid film L progresses, the edge La of the IPA liquid film L gradually moves toward the outer circumference as shown in FIGS. 10(a) and 10(b). If the heating of the wafer W by the first temperature adjustment unit 71 is continued, the surface temperature of the center of the wafer W from which the IPA liquid film L has been removed (that is, dried) becomes constant at a predetermined temperature. On the other hand, as shown in FIG. 10(c), a temperature gradient remains in the region where the IPA liquid film L remains on the outer peripheral side. Therefore, the edge La moves to the outer peripheral side of the wafer W while the Marangoni convection is formed in the vicinity of the edge La of the IPA liquid film L. As shown in FIG. That is, along with the movement of the edge La, the annular drying target area A1 moves to the outer peripheral side. In this manner, the IPA can be discharged from the surface of the wafer W at the outer periphery of the wafer W by continuing the movement of the edge portion La of the IPA liquid film L by the Marangoni convection.

Thus, even when the temperature adjustment unit 70A is used, the drying target area A1 can be formed by utilizing the temperature control of the wafer W surface. That is, in the vicinity of the edge portion La of the IPA liquid film L, the temperature on the side where the IPA liquid film L exists is low, and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) is high. forms a temperature gradient to This causes Marangoni convection at the edge La of the IPA liquid film L. As shown in FIG. As a result, IPA can be discharged from the surface of the wafer W while coagulating the IPA toward the side of the wafer W where the surface temperature is low. Therefore, it is possible to prevent the pattern from collapsing on the surface of the wafer W when the IPA is removed from the surface of the wafer W.

In the temperature adjustment section 70A, the heating temperature by the first temperature adjustment section 71 may be gradually changed as the edge portion La of the IPA liquid film L moves to the outer circumference. That is, the heating temperature by the first temperature adjuster 71 can be changed so that the surface temperature of the wafer W in the region where the edge portion La is formed falls within a temperature range where Marangoni convection due to the IPA liquid film is likely to occur.

In the temperature adjustment section 70A, the heating temperature is controlled by the first temperature adjustment section 71 so that the heating temperature is high near the center of the wafer W and gradually decreases toward the outer peripheral side. However, the method of heating the wafer W by the first temperature adjuster 71 is not particularly limited as long as the drying target area A1 can be formed in the area where the edge portion La of the IPA liquid film L is formed. For example, even if the first temperature adjustment unit 71 is arranged only in the vicinity of the center of the wafer W instead of having a shape corresponding to the entire surface of the wafer W, by controlling the heating temperature, it is possible to form a ring-like drying pattern on the surface of the wafer W. A region of interest A1 can be formed. Therefore, the formation of the Marangoni convection at the edge La of the IPA liquid film L and the movement of the IPA liquid film L can be controlled using the drying target area A1.

[others]
It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

For example, in the above embodiments, the case where the dry liquid is IPA has been described, but the dry liquid is not limited to IPA.

Also, as described in the above embodiments and modifications, the configuration and arrangement of the temperature adjustment section that functions as the substrate heating section or the substrate cooling section can be changed as appropriate. For example, in the above embodiment, the first temperature adjustment units 61 and 71 for cooling the entire surface of the wafer W are provided on the back surface side of the wafer W (holding unit 31 side). may be provided in

When viewed from above, not only is there a temperature difference in different regions (the drying target region A1 and the unprocessed region A2) on the surface of the wafer W, but also the IPA liquid is generated in the vertical direction (height direction of the IPA liquid film L). A temperature difference may be generated in the film L. For example, as shown in FIGS. 11 and 12, the temperature adjuster 60 includes a first temperature adjuster 61 arranged on the back side of the wafer W and a fourth temperature adjuster 61 arranged on the front side of the wafer W. 64 (cold member). The fourth temperature adjuster 64 is configured to move along the surface of the wafer W above the wafer W. As shown in FIG. The fourth temperature adjuster 64 may be set to a temperature lower than the temperature of the first temperature adjuster 61 that heats the wafer W. FIG. That is, the fourth temperature adjuster 64 may be set to a temperature lower than the temperature of the wafer W heated by the first temperature adjuster 61 . As a result, a temperature difference occurs between the upper portion of the IPA liquid film L that contacts the fourth temperature adjustment section 64 and the lower portion of the IPA liquid film L that contacts the wafer W, and the surface tension acting on the upper portion is relatively high. (Marangoni phenomenon). Therefore, the IPA liquid film L is attracted to the fourth temperature adjustment section 64 . Therefore, when the control unit 18 controls the operation of the fourth temperature adjustment unit 64 so that the fourth temperature adjustment unit 64 moves along the surface of the wafer W (see arrow S in FIGS. 11 and 12), the IPA The liquid film L is also moved along the surface of the wafer W by the fourth temperature control unit 64 . As a result, the IPA can be discharged from the surface of the wafer W at a desired path and speed while the control unit 18 appropriately controls the movement direction and movement speed of the fourth temperature adjustment unit 64 .

As shown in FIG. 11, the fourth temperature adjustment section 64 may have a mesh shape. In this case, as shown in FIG. 11(b), IPA is adsorbed in the spaces of the mesh due to capillary action. Therefore, the IPA liquid film L is easily moved by the fourth temperature control unit 64 , so that the IPA can be discharged from the surface of the wafer W more effectively.

As shown in FIG. 12(a), the fourth temperature adjuster 64 may be composed of one or more rod-shaped bodies. The rod-shaped body may have a linear shape, a curved shape, or a meandering shape. When the fourth temperature adjustment part 64 is composed of a plurality of rod-shaped bodies, the plurality of rod-shaped bodies are arranged substantially in parallel and may move along the direction in which they are arranged. Even when the fourth temperature adjustment part 64 is composed of a plurality of rod-shaped bodies, IPA is adsorbed in the spaces of the mesh due to capillary action. Therefore, the IPA liquid film L is easily moved by the fourth temperature control unit 64 , so that the IPA can be discharged from the surface of the wafer W more effectively.

The fourth temperature control section 64 may be configured by a plate-like body, as shown in FIG. 12(b). The plate-like body may have a flat plate shape, or may have a shape similar to that of the wafer W. As shown in FIG. A lower surface of the plate-like body facing the surface of the wafer W may be uneven. Even when the lower surface of the plate-like body is uneven, IPA is adsorbed in the spaces of the mesh due to capillary action. Therefore, the IPA liquid film L is easily moved by the fourth temperature control unit 64 , so that the IPA can be discharged from the surface of the wafer W more effectively.

Although not shown, the fourth temperature control part 64 may have a shape other than the above, such as a ring shape. The fourth temperature adjuster 64 may move linearly above the wafer W, or may turn above the wafer W by rotating around a predetermined vertical axis.

A plurality of patterns W1 formed on the surface of wafer W may be arranged regularly along a predetermined direction. For example, as shown in FIG. 13, when all of the plurality of patterns W1 have a substantially rectangular parallelepiped shape when viewed from above, all of the plurality of patterns W1 extend in a predetermined direction (horizontal direction in FIG. 13). may extend along the In this case, a temperature gradient may be formed on the surface of the wafer W so that the drying target area A1 moves to the unprocessed area A2 along the shape of the pattern W1. For example, when the temperature adjuster 60 includes the first temperature adjuster 61 and the second temperature adjuster 62 of the above-described first embodiment, the second temperature adjuster 62 moves along the shape of the pattern W1. Alternatively, it may be moved along the longitudinal direction of the pattern W1, or may be moved along the lateral direction of the pattern W1. When the IPA moves along the shape of the pattern W1, the discharge of the IPA is less likely to be hindered by the pattern W1. Therefore, even if the pattern W1 is formed on the surface of the wafer W, the IPA moves smoothly, and the pattern W1 can be prevented from being damaged when the IPA is ejected from the surface of the wafer W.

In order to form a temperature gradient on the surface of the wafer W so that the drying target area A1 moves to the unprocessed area A2 along the shape of the pattern W1, the substrate processing apparatus 10 acquires the shape of the pattern W1. It may further comprise an acquisition means configured to: The acquiring means is configured to determine the shape of the pattern W1 by performing image processing on the captured image of the surface of the wafer W captured by the imaging unit configured to capture an image of the surface of the wafer W and the imaging unit. and a processed processing unit. When a notch is formed in the wafer W and the directionality of the pattern W1 with respect to the notch is predetermined, the obtaining means is configured to obtain the position of the notch. may The notch may be, for example, a notch (a U-shaped, V-shaped groove, etc.) or a linear portion extending linearly (so-called orientation flat). For example, the control unit 18 may be configured to determine the discharge direction of the IPA from the surface of the wafer W based on the shape of the pattern W1 acquired by the acquisition means. In this case, a temperature gradient is formed on the surface of the wafer W so that the IPA liquid film L moves from the drying target area A1 to the unprocessed area A2 along the determined discharging direction. Therefore, it is possible to automatically set the discharge direction of the IPA according to the shape of the pattern W1.

Substrate processing apparatus 10 may further include a surrounding member configured to surround wafer W by being positioned proximate to the perimeter of wafer W. As shown in FIG. The upper surface of the surrounding member may be positioned at substantially the same height as the surface of the wafer W, and may extend along the horizontal direction. The upper surface of the surrounding member may be an inclined surface that slopes downward from the inner peripheral edge positioned at substantially the same height as the surface of the wafer W toward the outer peripheral edge. The surrounding member may be set to a temperature lower than the temperature of the wafer W. The substrate processing apparatus 10 may further include a gas supply unit configured to blow a gas set to a temperature lower than the temperature of the wafer W toward the upper surface of the surrounding member.

In any of the above examples, the wafer W may be tilted along the moving direction of the IPA (the moving direction of the drying target area A1) in order to promote the movement of the IPA.

[Example]
Example 1: In one exemplary embodiment, a substrate processing apparatus includes a substrate holding part that holds a substrate, a drying liquid supply part that supplies a drying liquid to the surface of the substrate held by the substrate holding part, a substrate and a controller for controlling the temperature adjuster. The control unit controls the temperature adjustment unit so as to generate a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate. As described above, when a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate, Marangoni convection occurs in the area of the liquid film where the temperature difference occurs, and the drying liquid moves due to the Marangoni convection. do. Therefore, the dry liquid can be discharged from the substrate surface by utilizing the movement of the dry liquid. With such a configuration, compared with the case where the drying liquid is discharged from the substrate surface using an external force, the pattern on the substrate surface is less affected, and the drying liquid is removed from the substrate surface. It is possible to prevent pattern damage at time.

Example 2: In the apparatus of Example 1, the surface of the substrate includes a drying target area to be subjected to drying treatment and an untreated area to which drying treatment is not applied. The temperature adjuster may be controlled to generate a temperature difference with the processing area. In this case, Marangoni convection occurs in the area between the area to be dried and the untreated area in the liquid film, and the drying liquid moves due to the Marangoni convection. Therefore, the movement of the dry liquid can be used to discharge the dry liquid from the substrate surface.

Example 3: In the apparatus of Example 2, the temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate heating unit applies a linear heat source along the surface of the substrate. By moving, the heating position on the surface of the substrate may be changed. By using a substrate heating unit that moves a linear heat source along the surface of the substrate, the region where Marangoni convection occurs can be finely controlled, and the drying liquid can be preferably removed.

Example 4: In the apparatus of Example 2 or Example 3, the temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate cooling unit cools the entire surface of the substrate. good too. When the entire surface of the substrate is cooled by the substrate cooling unit, the substrate heating unit can be used to form a temperature gradient in the region where the Marangoni convection is generated while the entire substrate is maintained at a predetermined temperature. , the drying liquid can be preferably removed.

Example 5: In the apparatus of Example 3, the substrate cooling section may cool the substrate by running a linear cooling source along the surface of the substrate along the substrate heating section. In the above-described mode, the substrate cooling unit and the substrate cooling unit can be combined to form a temperature gradient in a desired region that causes Marangoni convection, so that the drying liquid can be preferably removed.

Example 6: In the apparatus of any one of Examples 2 to 5, the control unit controls the temperature adjustment unit to create a temperature gradient on the surface of the substrate such that the liquid film moves from the area to be dried to the untreated area. It is good also as an aspect which forms. By forming a temperature gradient on the surface of the substrate so that the liquid film moves from the area to be dried to other areas, the movement of the drying liquid due to the temperature gradient formed on the substrate surface becomes smooth, and the drying liquid is removed from the substrate surface. It is possible to prevent damage to the pattern when the drying liquid is removed.

Example 7: In the apparatus of Example 6, a pattern having a predetermined shape is formed on the surface of the substrate, and the control unit controls the temperature adjustment unit to change the area from the area to be dried to the unprocessed area along the shape of the pattern. A temperature gradient may be formed across the surface of the substrate such that the liquid film moves to the substrate. In this case, since the drying liquid moves along the shape of the pattern, the discharge of the drying liquid is less likely to be hindered by the pattern. Therefore, even if a pattern is formed on the surface of the substrate, the movement of the drying liquid becomes smooth, and damage to the pattern can be prevented when the drying liquid is discharged from the surface of the substrate.

Example 8 In the apparatus of Example 2, the temperature adjustment unit includes a substrate heating unit that heats a portion of the surface of the substrate, and the control unit adjusts the temperature of the heating unit over time to form a temperature gradient on the surface of the substrate. It is also possible to adopt a mode in which the heating amount of is increased. By using such a substrate heating unit, a temperature gradient can be formed in a desired region in which Marangoni convection is generated, so that the drying liquid can be preferably removed.

Example 9: In the apparatus of Example 1, the temperature adjustment section includes a cryogenic member set to a temperature lower than that of the substrate, and the control section controls the temperature of the cryogenic member above the substrate while the cryogenic member is in contact with the liquid film. The temperature adjuster may be controlled to move along the surface of the substrate. In this case, the portion of the liquid film in contact with the low-temperature member has a lower temperature than the portion of the liquid film in contact with the substrate, and the surface tension is relatively increased (Marangoni phenomenon). As such, the liquid film is attracted to the cold member. Therefore, by moving the low-temperature member along the surface of the substrate, the liquid film is also moved along the surface of the substrate by the low-temperature member. As a result, the drying liquid can be discharged from the substrate surface along a desired path and speed while appropriately controlling the moving direction and moving speed of the low-temperature member.

Example 10: In the apparatus of any one of Examples 1 to 9, the substrate holder may be configured to tilt the substrate. By making the substrate tiltable, it is possible to promote the movement of the drying liquid using Marangoni convection, so that the removal speed of the drying liquid can be increased.

Example 11: In the apparatus of Example 2, the temperature adjustment section may include a substrate cooling section that cools the entire surface of the substrate and a substrate heating section that heats a region including the center of the substrate. A region including the center of the substrate is heated by the substrate heating unit while the entire surface of the substrate is cooled by the substrate cooling unit, thereby forming a temperature gradient that spreads annularly from the region including the center of the substrate. Therefore, Marangoni convection can be used to move the drying liquid toward the outer periphery of the substrate, and the drying liquid can be removed favorably.

Example 12: In the substrate processing apparatus of Example 2, the substrate heating unit is capable of forming a temperature gradient in which the heating temperature is the highest in the region including the center of the substrate and the heating temperature decreases toward the outer periphery. It is good also as an aspect containing. By using the above-described substrate heating section, it is possible to form a temperature gradient that spreads in an annular shape from a region including the center of the substrate. Therefore, Marangoni convection can be used to move the drying liquid toward the outer periphery of the substrate, and the drying liquid can be removed favorably.

Example 13: In another exemplary embodiment, a substrate processing method is provided by supplying a drying liquid to the surface of a substrate held by a substrate holding part, and causing a temperature difference in a liquid film of the drying liquid. and discharging the drying liquid from the surface of the substrate. In this case, the same effects as in Example 1 are obtained.

Example 14: In the method of Example 13, the surface of the substrate on which the liquid film is formed includes a drying target area to be subjected to drying treatment and an untreated area to which drying treatment is not applied, and the drying liquid is applied. Evacuating may comprise creating a temperature gradient across the surface of the substrate such that the liquid film moves from areas to be dried to untreated areas. By adopting such a mode, the movement of the liquid film of the drying liquid can be finely controlled using the temperature gradient, so that the drying liquid can be preferably removed.

Example 15: In the method of Example 14, a pattern of a predetermined shape is formed on the surface of the substrate, and discharging the drying liquid causes the liquid film to flow from the area to be dried to the untreated area along the shape of the pattern. Forming a temperature gradient across the surface of the substrate in a moving manner may also be included. In this case, the same effects as in Example 7 are obtained.

Example 16: The method of Example 15 further comprises determining the direction of discharge of the drying liquid by obtaining the shape of the pattern, wherein discharging the drying liquid is from the area to be dried along the determined direction of discharge. Forming a temperature gradient across the surface of the substrate to move the liquid film to untreated areas may be included. In this case, it is possible to automatically set the discharge direction of the drying liquid according to the shape of the pattern.

Example 17: In the method of any one of Examples 14 to 16, discharging the drying liquid includes moving the liquid film of the drying liquid by moving the heating position from one side of the peripheral edge of the substrate to the other. may contain By adopting such a mode, the drying liquid can be discharged by moving the heating position from one side of the peripheral portion of the substrate to the other side. Therefore, it is possible to suitably remove the dry liquid.

Example 18: In another exemplary embodiment, a computer-readable storage medium records a program that causes a device to perform the method of any of Examples 13-17. In this case, the same effects as those of the substrate processing method described above can be obtained. As used herein, computer-readable storage media include non-transitory computer recording media (e.g., various main or auxiliary storage devices) and transitory computer recording media. ) (eg, a data signal that can be provided over a network).

DESCRIPTION OF SYMBOLS 1... Substrate processing system 10... Substrate processing apparatus 16... Processing unit 18... Control part 60, 60A, 60B, 70, 70A... Temperature adjustment part 61, 71... First temperature adjustment part, 62, 72... Second temperature control unit 63 Third temperature control unit 64 Fourth temperature control unit (low temperature member) 73 Gas injection unit A1 Drying target area A2 Untreated area L IPA liquid film La... edge.

Claims (13)

a substrate holder that holds the substrate;
a dry liquid supply unit that supplies dry liquid to the surface of the substrate held by the substrate holding unit;
a temperature adjustment unit that changes the surface temperature of the substrate;
A control unit that controls the temperature adjustment unit,
The surface of the substrate includes a drying target area to be subjected to a drying process and an unprocessed area to which the drying process is not performed,
The temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate,
The substrate heating unit is configured to change a heating position on the surface of the substrate by moving a linear heat source along the surface of the substrate,
The control unit generates a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate by generating a temperature difference between the area to be dried and the unprocessed area , A substrate processing apparatus that controls the temperature adjustment unit. 2. The apparatus according to claim 1 , wherein said substrate cooling unit cools said substrate by running a linear cooling source parallel to said substrate heating unit along the surface of said substrate. a substrate holder that holds the substrate;
a dry liquid supply unit that supplies dry liquid to the surface of the substrate held by the substrate holding unit;
a temperature adjustment unit that changes the surface temperature of the substrate;
A control unit that controls the temperature adjustment unit,
The surface of the substrate includes a drying target area to be subjected to a drying process and an unprocessed area to which the drying process is not performed,
A pattern having a predetermined shape is formed on the surface of the substrate,
The control unit causes a temperature difference between the drying target area and the unprocessed area to supply the surface of the substrate from the drying target area to the unprocessed area along the shape of the pattern. A substrate processing apparatus for controlling the temperature adjustment unit so as to form a temperature gradient on the surface of the substrate so that the liquid film of the drying liquid being applied moves, thereby causing a temperature difference in the liquid film. The temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate,
4. The apparatus according to claim 1 , wherein said substrate cooling unit cools the entire surface of said substrate. a substrate holder that holds the substrate;
a dry liquid supply unit that supplies dry liquid to the surface of the substrate held by the substrate holding unit;
a temperature adjustment unit that changes the surface temperature of the substrate;
A control unit that controls the temperature adjustment unit,
The surface of the substrate includes a drying target area to be subjected to a drying process and an unprocessed area to which the drying process is not performed,
The temperature adjustment unit includes a substrate heating unit that heats a portion of the surface of the substrate, and the control unit adjusts the heating amount of the substrate heating unit over time for forming a temperature gradient on the surface of the substrate. is configured to increase the
The control unit generates a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate by generating a temperature difference between the area to be dried and the unprocessed area, A substrate processing apparatus that controls the temperature adjustment unit. a substrate holder that holds the substrate;
a dry liquid supply unit that supplies dry liquid to the surface of the substrate held by the substrate holding unit;
a temperature adjustment unit that changes the surface temperature of the substrate;
A control unit that controls the temperature adjustment unit,
The temperature adjustment unit includes a low-temperature member set to a temperature lower than that of the substrate,
The controller moves the low-temperature member above the substrate along the surface of the substrate while the low-temperature member is in contact with the liquid film of the drying liquid supplied to the surface of the substrate, A substrate processing apparatus that controls the temperature adjustment unit so as to generate a temperature difference in the liquid film. The substrate processing apparatus according to any one of claims 1 to 6 , wherein the substrate holding section can tilt the substrate. a substrate holder that holds the substrate;
a dry liquid supply unit that supplies dry liquid to the surface of the substrate held by the substrate holding unit;
a temperature adjustment unit that changes the surface temperature of the substrate;
A control unit that controls the temperature adjustment unit,
The surface of the substrate includes a drying target area to be subjected to a drying process and an unprocessed area to which the drying process is not performed,
The temperature adjustment unit includes a substrate cooling unit that cools the entire surface of the substrate and a substrate heating unit that heats a region including the center of the substrate,
The control unit generates a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate by generating a temperature difference between the area to be dried and the unprocessed area, A substrate processing apparatus that controls the temperature adjustment unit. supplying a dry liquid to the surface of the substrate held by the substrate holding part;
discharging the drying liquid from the surface of the substrate by causing a temperature difference in the liquid film of the drying liquid ;
The surface of the substrate on which the liquid film is formed includes a drying target area to be subjected to a drying process and an unprocessed area to which the drying process is not performed,
A pattern having a predetermined shape is formed on the surface of the substrate,
discharging the drying liquid includes forming a temperature gradient on the surface of the substrate such that the liquid film moves from the area to be dried to the unprocessed area along the shape of the pattern; Substrate processing method. further comprising determining the discharge direction of the drying liquid by obtaining the shape of the pattern;
Discharging the drying liquid includes forming a temperature gradient on the surface of the substrate such that the liquid film moves from the area to be dried to the untreated area along the determined discharge direction. 10. The method of claim 9 . 11. The method of claim 9 or 10 , wherein discharging the drying liquid comprises moving a liquid film of the drying liquid by moving a heating position from one peripheral edge of the substrate to the other. . supplying a dry liquid to the surface of the substrate held by the substrate holding part;
discharging the drying liquid from the surface of the substrate by causing a temperature difference in the liquid film of the drying liquid;
The surface of the substrate on which the liquid film is formed includes a drying target area to be subjected to a drying process and an unprocessed area to which the drying process is not performed,
Discharging the drying liquid forms a temperature gradient on the surface of the substrate by moving a heating position from one of the peripheral edges of the substrate to the other, thereby moving the area from the area to be dried to the untreated area. A substrate processing method comprising moving a liquid film of a drying liquid. A computer-readable storage medium recording a program for causing a device to execute the method according to any one of claims 9 to 12 .

Images