JP7260372B2 - Method for manufacturing substrate for mounting semiconductor device - Google Patents

Description

The present invention is manufactured by removing a metal plate from a resin sealing body in which a region where a semiconductor element is mounted is sealed with a sealing resin, and an external connection terminal made of a plating layer exposed on the back side is a printed circuit board. The present invention relates to a method for manufacturing a substrate for mounting a semiconductor element used for manufacturing a semiconductor package of a type connected to an external device such as.

When a semiconductor device is incorporated into an electronic device, there is a demand for visualization of solder joints so that it is possible to visually inspect whether the solder connection between the external connection terminal of the semiconductor device and the external electronic device is good or bad. ing.

Conventionally, however, a semiconductor package of a type in which external connection terminals do not protrude from the outer peripheral portion has a structure in which a plurality of external connection terminals arranged in an exposed state on the back side are connected to an external device such as a printed circuit board. Therefore, it was difficult to visually inspect whether the solder connection was normal.

However, if a visual inspection of the soldered connection portion is not possible, the connection failure inherent in the soldering work will be overlooked, and the work cost until the connection failure is discovered in the subsequent energization inspection or the like will be extra. Also, although it is possible to carry out a fluoroscopic inspection of the soldered joint using an X-ray apparatus, this would increase the equipment cost of the X-ray apparatus.

Therefore, conventionally, as a technique for visually inspecting whether the soldered connection state in the soldered connection part of the semiconductor package is good or bad, for example, the following Patent Document 1 discloses an external connection on the back side of the lead in the lead frame. By forming a groove that crosses the lead at the cut position of the terminal that will be the terminal for the external connection, the external connection terminal that is exposed on the back surface of the semiconductor package when individually cut is provided with a space along the edge, It has been proposed to allow solder to be interposed in the space so that the solder connection portion can be seen from the edge portion of the external connection terminal exposed on the side surface of the semiconductor package.

Further, for example, in the following Patent Document 2, a concave portion is provided on the back surface of a lead frame, and after the front side is sealed with resin, a predetermined region including the concave portion is subjected to half-cut processing from the sealing resin side, thereby forming the concave portion. A through-hole is formed in the previously provided portion, and then full-cut processing is performed with a width narrower than the width of the half-cut processing, so that the external connection terminal protrudes laterally, and solder is applied to the protruding portion on the side. It is described that a through hole or a slit is provided to make the connection part visible.

Japanese Patent Application Laid-Open No. 2000-294715 JP 2011-124284 A

However, in the technique of forming a groove that traverses the lead at the cutting position of the terminal portion that will be the external connection terminal on the back side of the lead in the lead frame described in Patent Document 1, the groove of the terminal portion is formed at the time of resin sealing. There is a possibility that the resin will enter into the gap, and a space for making the solder connection portion visible will not be formed, and the yield of the semiconductor package product will be reduced.

In addition, the technique described in Patent Document 2 requires two cutting processes, half-cutting and full-cutting, using a blade after resin encapsulation, resulting in poor production efficiency and an increase in cost. In addition, since the external connection terminals protrude laterally, it is difficult to miniaturize the semiconductor package product.

As described above, in a semiconductor package of a type in which a plurality of external connection terminals exposed on the back side are connected to an external device such as a printed circuit board, conventional techniques for making the solder connection portions visible include: There were problems in terms of product yield, production efficiency, and product miniaturization.

In response to this problem, the inventors of the present invention have improved the yield and production efficiency of semiconductor package products, are able to respond to miniaturization, and moreover, connect a plurality of external connection terminals exposed on the back side to external devices. As a lead frame for enabling visual inspection of good/bad solder connections in solder joints in a semiconductor package of the type to was conceived.

However, there is a problem that metal scraps adhere to the recess when the semiconductor package is cut into individual pieces after the semiconductor package is manufactured in the lead frame having the configuration in which the recess is formed at the cutting position of the external connection terminal portion on the back side of the lead. It turned out that there is

Therefore, the inventors of the present invention have proposed an external connection terminal made of a plating layer exposed on the back side, which is manufactured by removing a metal plate from a resin sealing body in which a region where a semiconductor element is mounted is sealed with a sealing resin. A substrate for mounting a semiconductor device used in the manufacture of a semiconductor package that is connected to an external device such as a printed circuit board was investigated. Then, after trial and error, the metal plate is provided with recesses to form the columnar protrusions, and the side and top surfaces of the columnar protrusions and predetermined regions around the columnar protrusions on the bottom surface of the recesses are covered with a plating layer, and the metal plate is A substrate for mounting a semiconductor device having a configuration in which the cross section of the plating layer becomes gate-shaped when the is removed was derived.

Further, the inventors of the present invention repeated trial and error with respect to the semiconductor element mounting substrate derived, and found that the height of the gate-shaped inner portion of the external connection terminal made of the plating layer was It was found that it is necessary to set the

Therefore, the inventor of the present invention manufactured a substrate for mounting a semiconductor element having a columnar projection with a predetermined height or more, and repeated trial and error.
As a result, in the case of manufacturing a substrate for mounting a semiconductor element having columnar protrusions with a height higher than a predetermined height, a plating layer for forming a plating layer for external connection terminals can be obtained by crimping a resist film onto a metal plate. When the resist mask was formed, the resist film could not follow the height of the columnar protrusions, and air bubbles remained between the resist film and the metal plate on which the columnar protrusions were formed. It has been found that when the plating layer is formed from the opening, void defects are likely to occur in the film of the plating layer, resulting in deterioration of yield and productivity.

The present invention has been made in view of the above-described conventional problems, and is manufactured by removing a metal plate from a resin sealing body in which a region where a semiconductor element is mounted is sealed with a sealing resin, and A substrate for mounting a semiconductor element used in the manufacture of a type of semiconductor package in which external connection terminals made of an exposed plating layer are connected to an external device such as a printed circuit board, improving the yield and production efficiency of semiconductor package products. In a method for manufacturing a substrate for mounting a semiconductor element, which can cope with miniaturization and allows visual observation of soldered connection parts, while suppressing costs, void defects in the film of the plating layer forming external connection terminals are prevented, It is an object of the present invention to provide a method of manufacturing a substrate for mounting a semiconductor element capable of improving yield and productivity of the substrate for mounting a semiconductor element.

In order to achieve the above object, according to one aspect of the present invention, there is provided a method for manufacturing a semiconductor device mounting substrate, in which a plurality of semiconductor device mounting substrates are arranged in multiple rows, and each semiconductor device mounting substrate is arranged on one side of a metal plate. A plurality of columnar protrusions with a height of 0.10 mm or more and 0.18 mm or less formed by providing recesses in the side surfaces and elongated from the four edges toward the center inside the semiconductor package region. and a plurality of terminal portions made of a plating layer covering the side surfaces and top surfaces of the respective columnar protrusions and predetermined regions around the columnar protrusions on the bottom surface of the recess. An etching resist mask is formed on one surface of the metal plate, which has openings for opening regions corresponding to the recesses and covers regions corresponding to the plurality of columnar protrusions. forming an etching resist mask covering the entire surface on the other side of the metal plate; a shielding member having an opening that opens a region and covering the other region is arranged at a predetermined distance from the etching resist mask formed on one side of the metal plate; Etching is performed on one surface of the, and the recesses with a depth of 0.10 mm or more and 0.18 mm or less are provided to form the individual columnar projections, and near the predetermined columnar projections, and forming a through hole in a region corresponding to a predetermined portion located outside the semiconductor package region; removing the shielding member and removing the etching resist mask; a plating resist mask having a plurality of openings for opening a predetermined region surrounding each of the columnar projections, and covering the other regions by pressing a resist film onto one surface of the metal plate; a step of plating a predetermined region around the columnar protrusion on the side surface and upper surface of the columnar protrusion and on the bottom surface of the recess, which are exposed from the opening of the resist mask for plating, to form the terminal section; and a step of removing the resist mask for plating.

In a method for manufacturing a semiconductor element mounting substrate according to another aspect of the present invention, a plurality of semiconductor element mounting substrates are arranged in multiple rows, and each semiconductor element mounting substrate is disposed on one side surface of a metal plate. a plurality of columnar protrusions having a height of 0.10 mm or more and 0.18 mm or less formed by providing recesses and elongated from four edges toward the center inside the semiconductor package region; A method for manufacturing a substrate for mounting a semiconductor element, comprising: a plurality of terminal portions made of a plating layer covering the side surface and the top surface of the columnar projection; and a predetermined region around the columnar projection on the bottom of the recess, forming, on one surface of the metal plate, an etching resist mask having openings for opening regions corresponding to the recesses and covering regions corresponding to the plurality of columnar protrusions; On the surface of the other side of the plate, there is an opening for opening a region corresponding to a predetermined portion near each of the columnar projections and outside the semiconductor package region, and for etching to cover the other region. forming a resist mask; and etching both surfaces of the metal plate to form the recesses having a depth of 0.10 mm or more and 0.18 mm or less to form the individual columnar projections, and forming a through hole in a region corresponding to a predetermined portion located near the columnar protrusion and outside the semiconductor package region ; removing the etching resist mask; A resist film is crimped onto one side surface of the conveyed metal plate, and has a plurality of openings that open a predetermined region surrounding each of the columnar projections, and for plating that covers other regions. a step of forming a resist mask, plating a predetermined region around the columnar projection on the side surface and top surface of the columnar projection and the bottom surface of the recess, which are exposed from the opening of the resist mask for plating; The method is characterized by comprising a step of forming a terminal portion and a step of removing the resist mask for plating.

Further, in the method of manufacturing a substrate for mounting a semiconductor element according to the present invention, in the step of forming the through holes, the through holes are preferably formed to have a diameter of 0.03 mm or more and 0.12 mm or less.

Further, in the method of manufacturing a substrate for mounting a semiconductor element according to the present invention, in the step of forming the through hole, the through hole is formed with the columnar protrusion having a longitudinal direction perpendicular to the conveying direction of the metal plate. and in a region corresponding to a predetermined portion positioned outside the semiconductor package region.

According to the present invention, an external connection terminal is manufactured by removing a metal plate from a resin sealing body in which a region where a semiconductor element is mounted is sealed with a sealing resin, and is made of a plated layer exposed on the back side. A substrate for mounting a semiconductor element used in the manufacture of a type of semiconductor package that is connected to an external device such as a printed circuit board, which improves the yield and production efficiency of the semiconductor package product, is compatible with miniaturization, and is soldered. In a method for manufacturing a substrate for mounting a semiconductor element that allows visual observation of a connection part, void defects in a film of a plating layer forming an external connection terminal are prevented while suppressing costs, thereby increasing the yield and productivity of the substrate for mounting a semiconductor element. It is possible to obtain a method for manufacturing a substrate for mounting a semiconductor element capable of improving the

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view showing an example of the main configuration of a semiconductor device mounting substrate manufactured by a semiconductor device mounting substrate manufacturing method according to an embodiment of the present invention, where (a) is a cross sectional view showing the structure of a terminal portion; 8(b) is a top view showing an example of a multi-row type semiconductor element mounting substrate in which the semiconductor element mounting substrates of (a) are arranged in multiple rows, and (c) is a partial longitudinal sectional view of (b). 1(a) and 1(b) showing another example of arrangement of terminal portions of adjacent semiconductor package regions in the substrate for mounting a semiconductor element, (a) being a cross-sectional view and (b) being a FIG. 2(a) is a top view of a multi-row type semiconductor element mounting substrate in which the semiconductor element mounting substrates are arranged in multiple rows, and (c) is a partial longitudinal sectional view of (b). FIG. 11 is an explanatory diagram showing an example of the main configuration of another type of semiconductor device mounting substrate manufactured by the method for manufacturing a semiconductor device mounting substrate according to one embodiment of the present invention, in which (a) shows the structure of the terminal portion; (b) is a top view showing an example of a multi-row type semiconductor device mounting substrate in which the semiconductor device mounting substrates of (a) are arranged in multiple rows, and (c) is a partial longitudinal sectional view of (b). is. 1. It is explanatory drawing which shows an example of the manufacturing procedure of the board|substrate for mounting a semiconductor element of FIG. FIG. 3 is an explanatory view showing another example of the manufacturing procedure of the semiconductor element mounting substrate of FIG. 1; It is explanatory drawing which shows an example of the manufacturing procedure of the semiconductor package using the semiconductor-element mounting substrate manufactured by the manufacturing method of the semiconductor-element mounting substrate of embodiment of this invention. FIG. 2 is an explanatory view showing in stages a state when connecting a semiconductor package manufactured using a semiconductor device mounting board according to an embodiment of the present invention to an external board via solder, (a) showing a state before connection; (b) is a diagram showing a state of being connected to solder, (c) is a diagram showing a state in which the semiconductor package is further pressure-bonded from the state of (b) and the solder reflowed by heating is wetted and spread. . FIG. 11 is an explanatory view showing another example of the arrangement of through holes in a semiconductor device mounting board manufactured by the method for manufacturing a semiconductor device mounting board according to the embodiment of the present invention, (a) being a top view showing one example; b) is a top view showing another example, (c) is a top view showing still another example, (d) is a top view showing still another example, and (e) is a top view showing still another example. be. BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing which shows an example of the prior art for making the solder connection part of a semiconductor package visible, (a) is the figure seen from the side which connects with the external device of the lead frame used for a semiconductor package, (b) is (a ) AA cross-sectional view of (a) in the semiconductor package assembled using the lead frame of ), (c) is a diagram showing the state where the external connection terminal of the semiconductor package of (b) is soldered to an external device, ( d) is a cross-sectional view taken along the line BB showing a terminal portion serving as an external connection terminal in the lead frame of (a). Explanatory drawing showing the configuration of a lead frame used in a semiconductor package in which at least some of the external connection terminals exposed on the side face have different widths, derived by the present inventor in the stage prior to deriving the present invention, (a) FIG. 3B is a cross-sectional view taken along the line C--C showing a terminal portion serving as an external connection terminal in the lead frame of FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing which shows an example of the principal part structure of the board|substrate for mounting a semiconductor element which this inventor derived in the stage before deriving this invention, (a) is sectional drawing which shows the structure of a terminal part, (b) is ( 2 is a top view showing a multi-row type semiconductor element mounting substrate in which the semiconductor element mounting substrates of a) are arranged in multiple rows; FIG. Explanatory views showing another example of the configuration of the main part of the substrate for mounting a semiconductor device derived by the present inventor in the stage prior to deriving the present invention, (a) being a cross-sectional view showing the structure of the terminal portion, (b) being a cross-sectional view; [FIG. 2] is a top view showing a multi-row type semiconductor element mounting substrate in which the semiconductor element mounting substrates of (a) are arranged in multiple rows; Explanatory diagrams showing still another example of the configuration of the main part of the semiconductor device mounting substrate derived by the present inventor in the stage before deriving the present invention, (a) is a cross-sectional view showing the structure of the terminal portion, (b) ) is a top view showing a multi-row type semiconductor element mounting substrate in which the semiconductor element mounting substrates of (a) are arranged in multiple rows. An explanatory view showing a conveying state when a resist film for forming a resist mask for plating in a manufacturing process of a substrate for mounting a semiconductor element is crimped onto a metal plate, derived by the present inventor in a stage prior to deriving the present invention. (a) is a side view, (b) is a top view, (c) is a top view schematically showing the conveying direction of the metal plate and the direction in which air escapes when the resist film is pressure-bonded to the metal plate, (d) ) is an enlarged view schematically showing the state when the resist film is pressure-bonded to the metal plate.

Prior to the description of the embodiments, the circumstances leading to the derivation of the present invention and the effects of the present invention will be described.
First, the inventor of the present invention examined and considered the technique described in Patent Document 1, which is a conventional technique for making the solder connection portion of a semiconductor package visible.
The technology described in Patent Document 1 will be described with reference to FIG. In FIG. 9, (a) is a view of the lead frame used in the semiconductor package from the side connected to the external device, and (b) is AA of (a) in the semiconductor package assembled using the lead frame of (a). Cross-sectional view, (c) shows a state in which the external connection terminals of the semiconductor package in (b) are soldered to an external device, and (d) shows the terminal part that will be the external connection terminal in the lead frame in (a). It is a BB sectional view showing.

In the lead frame used for the semiconductor package shown in FIG. 9(a), at the cutting position (position on the dashed line in FIG. 9(a)) of the terminal portion 51 which becomes the external connection terminal on the back side of the lead in the lead frame, A groove 51b crossing the lead is formed by etching or pressing a lead frame made of a metal plate such as Fe--Ni alloy or Cu alloy. In FIG. 9(a), 52 is a pad portion for mounting a semiconductor element, 53 is a support bar for supporting leads, and 60 is a semiconductor element.
Then, the semiconductor element 60 is mounted on the pad portion 52 of the lead frame, and the semiconductor element 60 is connected to the terminal portion serving as the internal connection terminal on the semiconductor element 60 mounting side of the lead with the bonding wire 61, and the semiconductor element mounting side is sealed. By cutting the semiconductor package sealed with the sealing resin 70 along the cutting position, as shown in FIG. 51 is provided with a space portion 51a extending to the edge portion.
As shown in FIG. 9(c), the semiconductor package formed in this manner is soldered to terminals 81 of an external device 80, and the solder 90 is formed from the rear surface of the external connection terminal 51 to the edge. It intervenes in the space 51a. Therefore, the solder connection portion of the external connection terminal 51 exposed on the side surface of the semiconductor package can be visually confirmed, and the quality of the solder connection state of the semiconductor package to the external device 80 can be visually inspected.

By the way, in the technique described in Patent Document 1, the lead frame made of a metal plate such as Fe—Ni alloy or Cu alloy is etched or pressed to form a groove 51b crossing the lead for making the solder connection portion visible. It is formed by processing.
However, as in the technique described in Patent Document 1, if a groove 51b that traverses the lead is formed at the cutting position of the terminal portion that will be the external connection terminal 51 on the back side of the lead in the lead frame, it will be difficult to assemble the semiconductor package. At the time of resin sealing, there is a possibility that the resin may enter the grooves 51b of the terminal portion, and the space portion 51a for making the solder connection portion visible may not be formed.
That is, when a groove 51b crossing the lead is formed in the terminal portion 51 to be the external connection terminal on the back side of the lead in the lead frame, the terminal portion 51 to be the external connection terminal is at the cutting position, as shown in FIG. 9(d). As shown in , the leads are formed thin across the entire width direction. In general, when the semiconductor element mounting side of the lead frame is resin-sealed, a sheet-like tape is attached to the back surface of the lead frame in order to prevent the resin from entering the groove on the back surface of the lead frame. However, since the outer portion of the groove 51b along the width direction of the lead does not have a surface in close contact with the sheet-like tape, the outer portion of the groove 51b along the width direction of the lead is separated from the sheet-like tape. Here, even if it is attempted to bring the sheet-like tape into close contact with the surface of the groove 51b, the sheet-like tape is greatly deformed, and it is difficult to bring the sheet-like tape into close contact with the groove 51b. A gap is likely to occur between the surfaces. As a result, when the resin is sealed, the resin flows through the gap between the sheet-like tape and the surface of the groove 51b, and enters the groove 51b of the terminal portion 51, thereby making it possible to visually inspect the soldered connection portion. There is a possibility that the yield of the semiconductor package product is lowered because the space is not formed.

Next, the technique described in Patent Document 2 is also a pre-stage in which through holes and slits are formed in order to make the solder connection portions visible by performing press working on a lead frame made of a patterned metal plate. In the case of a semiconductor element mounting substrate for manufacturing a semiconductor device of the type in which the metal plate is removed and the plated layer exposed on the back side constitutes the terminal portion that will be the terminal for external connection. It is very difficult to form recesses by pressing the plated layer.
In addition, after resin encapsulation, it is necessary to perform two cutting processes, half-cutting and full-cutting, using a blade, resulting in poor production efficiency and an increase in cost. Moreover, since the external connection terminals protrude in the lateral direction, it is difficult to miniaturize the semiconductor package product.

Here, the inventor of the present invention improved the technique described in Patent Document 1 and came up with the idea of forming a concave portion at the cut position of the terminal portion serving as the external connection terminal on the back side of the lead in the lead frame. Then, using a lead frame in which a recess is formed at the cutting position of the terminal portion that serves as an external connection terminal, a semiconductor element is mounted, sealed with resin, and then cut to manufacture individual semiconductor packages. The edge of the external connection terminal exposed on the side of the terminal is formed in a gate shape, and the soldered part can be visually confirmed from the area surrounded by the gate-shaped edge. .

FIG. 10 is an explanatory diagram showing the configuration of a lead frame used in a semiconductor package in which at least some of the external connection terminals exposed on the side face are different in width, which was studied by the present inventor in the stage prior to deriving the present invention. FIG. 1(a) is a view from the side connected to an external device, and (b) is a cross-sectional view taken along the line CC showing a terminal portion serving as an external connection terminal in the lead frame of (a).
In the lead frame of FIG. 10, the terminal portions 71 serving as the respective external connection terminals are provided at predetermined positions extending inside the cutting area for cutting into individual lead frames in the vicinity of the dam bar 73. A concave portion 71b' having an opening of a predetermined shape is formed according to the width of the terminal portion 71 (the width of the region exposed by being cut at the position of the broken line in FIG. 10(a)).
The concave portion 71b' is surrounded by a terminal portion 71 and a dam bar 73 that serve as terminals for external connection. In FIG. 10A, the cross-sectional shape of the external connection terminal 71 exposed on the side surface of the semiconductor package by being cut at the position of the broken line (that is, the end face shape of the edge portion 71a' of the external connection terminal 71) ) is formed in a gate shape as shown in FIG. 10(b).

In the lead frame shown in FIG. 10, unlike the lead frame shown in FIG. 9, the periphery of the recess 71b' is surrounded by the metal material that constitutes the terminal portion 71 or the dam bar 73 serving as an external connection terminal. The surface of the metal material surrounding the perimeter of is flat.
Therefore, the surface of the metal material around the concave portion 71b' can be brought into close contact with the sheet-shaped tape, and when the semiconductor element mounting side of the lead frame is sealed with resin, the resin can be prevented from entering the concave portion 71b'. can be prevented.

However, as a result of further investigation by the inventors of the present invention, it has been found that a lead frame having a configuration in which recesses are formed at the cut positions of the external connection terminal portions on the back side of the leads is used for singulating semiconductor packages after manufacturing. It was found that there was a problem that metal scraps adhered to the concave portion due to cutting.

Therefore, the inventors of the present invention have proposed an external connection terminal made of a plating layer exposed on the back side, which is manufactured by removing a metal plate from a resin sealing body in which a region where a semiconductor element is mounted is sealed with a sealing resin. A substrate for mounting a semiconductor device used in the manufacture of a semiconductor package that is connected to an external device such as a printed circuit board was investigated. After trial and error, the columnar protrusions are formed in the metal plate by providing the recesses in the metal plate, and the side and top surfaces of the columnar protrusions and the predetermined areas around the columnar protrusions on the bottom surface of the recesses are covered with a plating layer. , a substrate for mounting a semiconductor element having a configuration in which the cross section of the plating layer becomes gate-shaped when the metal plate is removed was derived.

11 to 13 are explanatory diagrams showing the main structure of a substrate for mounting a semiconductor device derived by the present inventor in the previous stage of deriving the present invention, and in each figure (a) shows the structure of the terminal portion. FIG. 3B is a cross-sectional view, and FIG. 4B is a top view showing a multi-row type semiconductor device mounting substrate in which the semiconductor device mounting substrates of FIG. 4A are arranged in multiple rows;

11 to 13, the substrate 1 for mounting a semiconductor element includes a side surface and an upper surface of a columnar projection 10b formed by providing a recess 10a in a metal plate 10, and a predetermined region around the columnar projection 10b on the bottom of the recess 10a. is covered with the plating layer 12 (the plating layer 12-2 in the semiconductor element mounting substrate of FIG. 13). In FIG. 13, 12-1 is a plating layer formed on the semiconductor element mounting region on the bottom surface of the recess 10a.
The columnar protrusion 10b extends in an elongated shape from the four edges toward the center inside the semiconductor package region.
According to these semiconductor element mounting substrates 1, by dissolving and removing the metal plate 10, the plating layers 12 and 12-2 formed to cover the top surface and side surfaces of the columnar protrusion 10b have gate-shaped cross sections. It can be configured as follows.

Further, the inventors of the present invention repeated trial and error and found that the height of the gate-shaped inner portion of the external connection terminal made of the plating layer (the concave portion formed of the plating layer depth) of 0.10 mm or more.

Therefore, the inventor of the present invention manufactured a substrate for mounting a semiconductor element having a columnar projection with a height of 0.10 mm or more, and repeated trial and error.
As a result, when manufacturing a substrate for mounting a semiconductor element having a structure in which the height of the columnar protrusion is 0.10 mm or more, the plating layer for the external connection terminal is formed by crimping the resist film onto the metal plate. When a resist mask for plating is formed for plating, the resist film cannot follow the height of the columnar protrusions, and air bubbles remain between the resist film and the metal plate on which the columnar protrusions are formed. It has been found that when the plating layer is formed from the opening of the formed resist mask, void defects are likely to occur in the film of the plating layer, resulting in deterioration of yield and productivity.

FIG. 14 is an explanation derived by the inventor of the present invention in a stage prior to deriving the present invention, showing a conveying state when a resist film for forming a resist mask for plating is pressure-bonded to a metal plate in the manufacturing process of a substrate for mounting a semiconductor device. In the figure, (a) is a side view, (b) is a top view, and (c) is a top view schematically showing the conveying direction of the metal plate and the direction in which air escapes when the resist film is pressure-bonded to the metal plate. and (d) is an enlarged view schematically showing a state in which the resist film is pressure-bonded to the metal plate.
Generally, the plating process in the manufacturing process of substrates for semiconductor devices is carried out in a state in which a metal plate is transported in a line via a transport device, as shown in FIGS. 14(a) and 14(b).
In the plating process, a resist film R wound into a roll is press-bonded to the transported metal plate 10 provided with the columnar projections 10b via rollers 100 in order to form a resist mask for plating. At this time, the air between the resist film R and the metal plate 10 escapes in the direction opposite to the conveying direction X1 of the metal plate.
Here, as shown in FIG. 14(c), if the sides of the columnar protrusions 10b extend perpendicularly to the conveying direction of the metal plate, when the resist film is crimped, the direction opposite to the conveying direction The air trying to escape to the outside comes into contact with the long sides of the columnar protrusions 10b and becomes difficult to escape.

As a result of repeated trial and error, the inventors of the present invention found that when the height of the columnar protrusions 10b is set to 0.10 mm or more, the resist film R does not reach the height of the columnar protrusions 10b when the resist film R is crimped. The resist film R and the columnar protrusions 10b are formed in a state in which the air that cannot follow and tries to escape in the direction opposite to the conveying direction of the metal plate stays on the sides (especially the long sides) of the columnar protrusions 10b. As shown in FIG. 14(d), it has been found that air bubbles 99 tend to remain between the metal plate 10 and the metal plate 10.
Then, an opening for plating is formed in a predetermined region surrounding the columnar projection 10b in the resist film R in which air bubbles 99 remain between the metal plate 10 and the resist film R with the opening. was used as a plating resist mask to form a plating layer, voids were likely to be formed in the formed plating layer at sites where bubbles remained in the vicinity of the opening, and the yield of the manufactured substrate for mounting a semiconductor element deteriorated. It turned out to do.

Therefore, when manufacturing a substrate for mounting a semiconductor element as shown in FIGS. It is necessary to prevent air from remaining between the resist film and the metal plate when press-bonding to 10 .
However, in the substrate for mounting a semiconductor element shown in FIGS. 11 to 13, the columnar protrusion 10b is elongated from the four edges toward the center inside the semiconductor package region. Since one of the sides of the portion 10b extends perpendicularly to the conveying direction of the metal plate 10, when the resist film is pressure-bonded to the metal plate 10, the air is directed to the side opposite to the conveying direction of the metal plate. It is difficult to escape completely in the direction of

Here, in order to form a resist mask for plating, if a liquid resist is applied to a metal plate and dried to form a film without using a resist film, the problem of remaining air can be eliminated. Although it does not occur, the cost of the liquid resist is higher than that of the film resist.

Therefore, the inventors of the present invention have proposed an external connection terminal made of a plating layer exposed on the back side, which is manufactured by removing a metal plate from a resin sealing body in which a region where a semiconductor element is mounted is sealed with a sealing resin. is a substrate for mounting a semiconductor element used in the manufacture of a semiconductor package of a type that is connected to an external device such as a printed circuit board, which can improve the yield and production efficiency of semiconductor package products, and can respond to miniaturization. In a method for manufacturing a substrate for mounting a semiconductor element in which a solder connection part is visible, a void defect in a film of a plating layer that forms an external connection terminal while suppressing costs by using a resist film for forming a resist mask for plating. Thus, a method of manufacturing a semiconductor device mounting substrate capable of preventing the above and improving the yield and productivity of the semiconductor device mounting substrate has been derived.

In a method for manufacturing a semiconductor element mounting substrate according to one aspect of the present invention, a plurality of semiconductor element mounting substrates are arranged in multiple rows, and each semiconductor element mounting substrate is provided with a concave portion on one side surface of a metal plate. a plurality of pillar-shaped projections having a height of 0.10 mm or more and 0.18 mm or less elongated from the four edges toward the center inside the semiconductor package region; and a plurality of terminal portions made of a plating layer covering predetermined regions around the columnar protrusions on the side and top surfaces of the recess and the bottom surface of the recess, the method comprising one side of the metal plate On the surface of the metal plate, an etching resist mask is formed that has openings that open regions corresponding to the recesses and covers regions corresponding to the plurality of columnar projections, and on the other side of the metal plate, a step of forming an etching resist mask covering the entire surface; having openings for opening regions corresponding to predetermined portions near the individual pillar-shaped protrusions and outside the semiconductor package region, and covering other regions; One surface of the metal plate is etched with the shielding member placed at a predetermined distance from the etching resist mask formed on one side of the metal plate to obtain a thickness of 0.10 mm or more and 0.18 mm or less. a step of forming individual columnar protrusions by providing recesses having a depth of 100 mm and forming through holes in areas corresponding to predetermined portions located near predetermined columnar protrusions and outside the semiconductor package area. a step of removing the shielding member and the etching resist mask; and pressing a resist film onto one side surface of the metal plate conveyed by the conveying device to form each columnar protrusion. a step of forming a plating resist mask having a plurality of openings that open a predetermined region surrounding it and covering other regions; The method includes a step of plating a predetermined region around the columnar protrusion on the bottom surface to form a terminal portion, and a step of removing the plating resist mask.

In a method for manufacturing a semiconductor element mounting substrate according to another aspect of the present invention, a plurality of semiconductor element mounting substrates are arranged in multiple rows, and each semiconductor element mounting substrate is disposed on one side surface of a metal plate. a plurality of columnar protrusions having a height of 0.10 mm or more and 0.18 mm or less formed by providing recesses and elongated from four edges toward the center inside the semiconductor package region; A method for manufacturing a substrate for mounting a semiconductor element, comprising: a plurality of terminal portions made of a plating layer covering the side surfaces and top surfaces of the columnar protrusions; An etching resist mask is formed on one surface of the metal plate so as to have openings for opening regions corresponding to the recesses and to cover regions corresponding to the plurality of columnar protrusions, and the other surface of the metal plate. a step of forming an etching resist mask on the top, having openings for opening regions corresponding to predetermined portions near the individual columnar protrusions and outside the semiconductor package region, and covering other regions; Etching is performed on both sides of the plate to form recesses with a depth of 0.10 mm or more and 0.18 mm or less, thereby forming individual columnar projections, and in the vicinity of the predetermined columnar projections and in the semiconductor package area. a step of forming a through hole in a region corresponding to a predetermined portion located outside ; a step of removing the resist mask for etching ; A step of forming a plating resist mask by pressing a resist film and having a plurality of openings opening predetermined regions surrounding the respective columnar projections and covering other regions, and exposing from the openings of the plating resist mask. a step of plating a predetermined region around the columnar projection on the side surface and top surface of the columnar projection and the bottom surface of the recess to form a terminal portion; and a step of removing the plating resist mask.

As in the method of manufacturing a substrate for mounting a semiconductor element of the present invention, a metal plate is subjected to an etching process to form recesses having a depth of 0.10 mm or more and 0.18 mm or less, thereby forming individual columnar projections. At the same time, when the through-holes are formed in the vicinity of the individual columnar protrusions and in the regions corresponding to the predetermined portions located outside the semiconductor package region, the conveying device is used for the subsequent formation of the plating resist mask. When the resist film is crimped onto one side surface of the conveyed metal plate, it hits the long sides of the columnar protrusions extending perpendicularly to the conveying direction of the metal plate, making it difficult to escape. Air can easily escape downward from the metal plate through the through holes. Then, the generation of air bubbles between the resist film and the metal plate on which the columnar projections are formed can be prevented, and the resist film for forming the resist mask for plating is crimped while following the height of the columnar projections. be able to. As a result, when an opening for plating is formed in this resist film to form a plating layer, voids are not formed in the formed plating layer, and the yield and productivity of the manufactured substrate for mounting a semiconductor element are improved. improves.

In the method of manufacturing a substrate for mounting a semiconductor element of the present invention, preferably, in the step of forming the through hole, the through hole is formed to have a diameter of 0.03 mm or more and 0.12 mm or less.
By forming the through-hole with a diameter within this range, when the resist film is crimped onto one side of the metal plate conveyed by the conveying device, the resist film extends perpendicularly to the conveying direction of the metal plate. The air that hits the long side of the columnar protrusion and is difficult to escape can be reliably released below the metal plate through the through hole.

In the method of manufacturing a substrate for mounting a semiconductor element of the present invention, preferably, in the step of forming the through-hole, the through-hole is formed as a columnar protrusion whose longitudinal direction is perpendicular to the conveying direction of the metal plate. It is formed in a region corresponding to a predetermined portion located near and outside the semiconductor package region.
If the through-hole is formed in such a region, when the resist film is crimped onto one side of the metal plate conveyed by the conveying device, the through-hole extends perpendicularly to the conveying direction of the metal plate. The air that hits the long side of the columnar protrusion that is in contact with and is difficult to escape can be reliably released below the metal plate through the through-hole, and the number of through-hole formation locations is minimized. be able to.

Therefore, according to the present invention, the semiconductor device for external connection is manufactured by removing the metal plate from the resin sealing body in which the region where the semiconductor element is mounted is sealed with the sealing resin, and is made of the plating layer exposed on the back side. A substrate for mounting a semiconductor element used in the manufacture of a semiconductor package whose terminals are connected to an external device such as a printed circuit board, which improves the yield and production efficiency of the semiconductor package product, and can also respond to miniaturization. In a method for manufacturing a semiconductor element mounting board in which a solder connection part is visible, void defects in a film of a plating layer forming an external connection terminal are prevented while suppressing costs, thereby increasing the yield of the semiconductor element mounting board, A method for manufacturing a substrate for mounting a semiconductor element that can improve productivity is obtained.

Hereinafter, with reference to the drawings, description will be given of a mode for carrying out the present invention.

FIG. 1 is an explanatory view showing an example of the configuration of a main part of a semiconductor device mounting substrate manufactured by a method for manufacturing a semiconductor device mounting substrate according to one embodiment of the present invention, and (a) shows the structure of a terminal portion. (b) is a top view showing an example of a multi-row type semiconductor device mounting substrate in which the semiconductor device mounting substrates of (a) are arranged in multiple rows; (c) is a partial longitudinal sectional view of (b). is. FIGS. 2A and 2B are diagrams showing another example of arrangement of terminal portions of adjacent semiconductor package regions in the substrate for mounting a semiconductor device shown in FIGS. b) is a top view of a multi-row type semiconductor element mounting substrate in which the semiconductor element mounting substrates of (a) are arranged in multiple rows, and (c) is a partial longitudinal sectional view of (b). FIG. 3 is an explanatory diagram showing an example of the main configuration of another type of semiconductor device mounting substrate manufactured by the method for manufacturing a semiconductor device mounting substrate according to one embodiment of the present invention, in which (a) is a terminal portion. (b) is a top view showing an example of a multi-row semiconductor device mounting substrate in which the semiconductor device mounting substrates of (a) are arranged in multiple rows; (c) is the part (b) It is a longitudinal cross-sectional view.

A semiconductor device mounting substrate 1 manufactured by the method for manufacturing a semiconductor device mounting substrate according to the present embodiment includes, for example, a concave portion 10a, a plurality of columnar protrusions 10b, and a plurality of columnar protrusions 10b, as shown in FIG. It has a terminal portion 12 and is arranged in multiple rows as shown in FIG. 1(b).
The recess 10a is formed on one side surface of the metal plate 10 and has a depth of 0.10 mm or more and 0.18 mm or less.
The columnar protrusion 10b is formed by providing a recess 10a in the metal plate 10, and extends from the four edges to the center inside the semiconductor package area (the rectangular area surrounded by the dashed line in FIG. 1(b)). It extends in an elongated shape.
The terminal portion 12 is formed of a plating layer formed so as to cover a predetermined area around the columnar protrusion 10b on the side surface and upper surface of the columnar protrusion 10b and the bottom surface of the recess 10a.
1(b) and 1(c), the metal plate 10 has through-holes in regions corresponding to predetermined regions near the individual columnar protrusions 10b and outside the semiconductor package region, as shown in FIGS. 18 are formed. The through hole 18 has a diameter of 0.03 mm or more and 0.12 mm or less.
The plurality of terminal portions 12 are configured so that a semiconductor element can be flip-chip mounted on the lower portion of the terminal portion 12 or the upper portion of the terminal portion 12 via a connecting member such as solder (not shown). .
In the example of FIGS. 1A and 1B, the substrate 1 for mounting a semiconductor element of the present embodiment is arranged such that the columnar protrusions 10b of adjacent semiconductor package regions (not shown) are connected to each other. However, as shown in FIGS. 2(a) and 2(b), the columnar protrusions 10b of adjacent semiconductor package regions (not shown) may be arranged apart from each other. .
Further, as shown in FIGS. 3A and 3B, the substrate 1 for mounting a semiconductor element of the present embodiment has a pad portion 12-1 formed of a plating layer at the center portion of the bottom surface of the recess 10a. , around the pad portion 12-1 and covering the side and top surfaces of the columnar protrusions 10b formed by providing the recesses 10a and a predetermined area around the columnar protrusions 10b on the bottom of the recesses 10a. It has a plurality of terminal portions 12-2 composed of plated layers, and a semiconductor element is mounted on the pad portion 12-1 via a connection member such as a bonding wire. The upper surface of the terminal portion 12-2 and the electrode of the semiconductor element may be wire-bonded.

Next, an example of a manufacturing process of the substrate 1 for mounting a semiconductor element according to the present embodiment configured as shown in FIGS. 1(a) to 1(c) will be described with reference to FIG. In addition, in FIG. 4, (a) to (i) show the state when viewed from the same side as FIG. 1 (a), and (a') to (i') show the state when viewed from the same side as FIG. indicates the state of the moment. Further, for the sake of convenience, descriptions of pre-treatments and post-treatments including cleaning with chemicals and cleaning with water, which are carried out in each process of manufacturing, are omitted.
First, a copper or copper alloy metal plate 10 is prepared as a substrate material for mounting a semiconductor element (see FIGS. 4(a) and 4(a')).
Next, the metal plate 10 is half-etched to form the columnar protrusions 10b and the through-holes 18 . Specifically, a first resist layer R1 such as a dry film resist is formed on both surfaces of the metal plate 10 (see FIGS. 4(b) and 4(b')). Next, using a glass mask on which a predetermined pattern corresponding to the columnar protrusions 10b shown in FIGS. 1A and 1B is drawn, the first resist layer R1 on one side of the metal plate 10 is , the entire surface of the first resist layer R1 on the other side of the metal plate 10 is exposed, and after the exposure, each first resist layer R1 is developed. Then, an etching resist mask 31 is formed on one side of the metal plate 10 so as to cover the region corresponding to the columnar projection 10b and to open the region corresponding to the recess 10a. An etching resist mask 31 covering the entire surface is formed on the side surface (see FIGS. 4(c) and 4(c')). Next, it has an opening that opens a region (region corresponding to the through hole 18 shown in FIG. 1) corresponding to a predetermined portion near the individual columnar protrusions 10b and outside the semiconductor package region, and other regions. half-etching from one side of the metal plate 10 while the shielding member 35 covering By providing the recesses 10a with a depth of 10 mm or more and 0.18 mm or less, the individual columnar projections 10b are formed and correspond to predetermined portions located near the columnar projections 10b and outside the semiconductor package area. A through hole 18 is formed in the region (see FIGS. 4(d) and 4(d')). Next, the etching resist masks 31 formed on both surfaces of the metal plate 10 are removed (see FIGS. 4(e) and 4(e')).

Next, on one side of the metal plate 10, a plurality of terminal portions 12 are formed from a plating layer covering predetermined regions around the side surfaces and top surfaces of the columnar protrusions 10b and the bottom surfaces of the recesses 10a. Specifically, a second resist layer R2 made of a dry film resist is crimped onto both surfaces of the metal plate 10 (see FIGS. 4(f) and 4(f')). At this time, the air that hits the long sides of the columnar protrusions 10b that extend perpendicularly to the conveying direction of the metal plate 10 and is difficult to escape escapes downward from the metal plate 10 through the through holes 18. . When the second resist R2 is pressure-bonded, a second resist layer to be pressure-bonded to one side of the metal plate 10 (that is, the side on which the columnar protrusions 10b are formed) is applied in advance to the metal plate 10. A pressure bonding means (not shown) such as a roller is arranged so that the second resist layer is pressed slightly faster than the second resist layer to be pressed against the other side of the substrate. Next, using a glass mask on which a predetermined pattern corresponding to the terminal portion 12 shown in FIGS. 1A and 1B is drawn, the second resist layer R2 on one side of the metal plate 10 is removed. After exposure, the second resist layer R2 is developed. A plurality of openings are formed on one side of the metal plate 10 in a region corresponding to the terminal portion 12 covering a predetermined region around the columnar protrusion 10b on the side surface and upper surface of the columnar protrusion 10b and the bottom surface of the recess 10a. A plating resist mask 32 having portions is formed (see FIGS. 4(g) and 4(g')). Next, the openings of the plating resist mask 32 are plated with, for example, Au, Pd, Ni, and Pd in this order to form a plurality of terminal portions 12 (FIGS. 4(h) and 4(h'). reference).
The surface of the plated layer is preferably roughened. When roughening the surface of the plated layer, for example, the formation of the plated layer may be finished with Ni plating, and the Ni plated layer may be formed with roughening plating. Further, for example, after forming a smooth Ni plating layer, the surface of the Ni plating layer may be roughened by etching. Alternatively, for example, the formation of the plating layer may be finished with Cu plating, and the surface of the Cu plating layer may be roughened by anodizing or etching. Further, for example, after forming the roughening plating layer, Pd/Au plating layers may be sequentially laminated.
Next, the plating resist masks 32 formed on both surfaces of the metal plate 10 are removed (see FIGS. 4(i) and 4(i')).
Thereby, the substrate 1 for mounting a semiconductor element of the present embodiment is completed.

1(a) to 1(c) is not limited to the example shown in FIG. 5 may be used.
5, (a) to (i) show the state when viewed from the same side as FIG. 1 (a), and (a') to (i') show the state when viewed from the same side as FIG. 1 (c). indicates the state of the moment. Further, for the sake of convenience, descriptions of pre-treatments and post-treatments including cleaning with chemicals and cleaning with water, which are carried out in each process of manufacturing, are omitted.
In the manufacturing process of the substrate 1 for mounting a semiconductor element shown in FIG. 5, the processing procedure of half-etching the metal plate 10 to form the columnar protrusions 10b and the through holes 18 is different from the example shown in FIG. different.
Specifically, after forming a first resist layer R1 such as a dry film resist on both surfaces of the metal plate 10 (see FIGS. 5(b) and 5(b')), The first resist layer R1 on one side of the metal plate 10 is exposed using a glass mask on which a predetermined pattern corresponding to the columnar projections 10b shown in FIG. , the first resist layer R1 on the other side of the metal plate 10 is exposed using a glass mask on which a predetermined pattern corresponding to the through holes 18 located outside the semiconductor package region is drawn, and after the exposure, each of the first resist layers R1 is exposed. 1 resist layer R1 is developed. Then, an etching resist mask 31 is formed on one side of the metal plate 10 so as to cover the region corresponding to the columnar projection 10b and to open the region corresponding to the recess 10a. An etching resist mask 31 is formed on the side surface so that a region corresponding to the through hole 18 located near the columnar protrusion 10b and outside the semiconductor package region is opened and the other region is covered (FIG. 5(c) and FIG. 5(c')). Next, the metal plate 10 is half-etched from both sides to form recesses 10a having a depth of 0.10 mm or more and 0.18 mm or less on one side, thereby forming individual columnar projections 10b. A through hole 18 is formed in the vicinity of 10b and in a region corresponding to a predetermined portion located outside the semiconductor package region (see FIGS. 5(d) and 5(d')).
Other manufacturing procedures are substantially the same as the example shown in FIG. 4 (see FIGS. 5(e) to 5(i) and 5(e') to 5(i')).

Next, a procedure for manufacturing a semiconductor package using the semiconductor element mounting board 1 manufactured by the method for manufacturing a semiconductor element mounting board according to the present embodiment will be described with reference to FIG.
First, the semiconductor element 20 is flip-chip connected to the internal terminal connection portion on the surface of the terminal portion 12 via solder 17 or the like (see FIG. 6(a)).
Next, a molding die (not shown) is set, and the semiconductor element mounting side is sealed with a sealing resin 15 (see FIG. 6(b)).
Next, the metal plate 10 is removed (see FIG. 6(c)) and cut into a predetermined semiconductor package size (see FIG. 6(d)). As a result, a semiconductor package 40 using the substrate 1 for mounting a semiconductor element of the present embodiment is completed (see FIG. 6(e)).

According to the manufacturing method of the substrate for mounting a semiconductor element of the present embodiment, the metal plate 10 is subjected to an etching process to form the recesses 10a having a depth of 0.10 mm or more and 0.18 mm or less, thereby forming individual columnar protrusions. 10b are formed, and through holes 18 are formed in regions corresponding to predetermined portions located in the vicinity of the individual columnar protrusions 10b and outside the semiconductor package region. For the formation of the metal plate 10, when the resist film (second resist layer R2) is crimped onto one side surface of the metal plate 10, which is transported using the transport device, in the transport direction of the metal plate 10 The air, which hits the long side of the columnar protrusion 10 b extending perpendicularly to the metal plate 10 b and is difficult to escape, can be easily released downward from the metal plate 10 through the through hole 18 . Then, it is possible to prevent air bubbles from being generated between the resist film (second resist layer R2) and the metal plate 10 on which the columnar protrusions 10b are formed, and the resist film (second resist layer R2) for forming the plating resist mask 32 can be prevented. The resist layer R2) can be pressure-bonded so as to follow the height of the columnar protrusion 10b. As a result, when the plating layer 12 is formed by forming an opening for plating in this resist film, voids are not formed in the formed plating layer 12, and the yield and production of the manufactured substrate for mounting a semiconductor element are improved. improve sexuality.

Further, according to the manufacturing method of the substrate for mounting a semiconductor element of the present embodiment, the through hole 18 is formed to have a diameter of 0.03 mm or more and 0.12 mm or less. When the resist film (second resist layer R2) is pressure-bonded onto one side surface of the metal plate 10, the long sides of the columnar protrusions 10b extending perpendicularly to the conveying direction of the metal plate 10 are The air that hits and is difficult to escape can be reliably released below the metal plate through the through holes 18. - 特許庁

In addition, in the method of manufacturing a substrate for mounting a semiconductor element according to the present embodiment, the through hole 18 is formed in the vicinity of the columnar projection 10b and in the semiconductor package region, the longitudinal direction of which is perpendicular to the conveying direction of the metal plate 10. If it is formed in a region corresponding to a predetermined portion located outside, a resist film (second resist layer R2) is formed on one side surface of the metal plate 10 that is transported using the transport device. When the metal plate 10 is crimped, the air that hits the long side of the columnar protrusion 10b extending perpendicularly to the conveying direction of the metal plate 10 and is difficult to escape is surely pushed downward through the metal plate 18 through the through hole 18. It is possible to escape, and to minimize the formation locations of the through-holes 18 .

Therefore, according to the present embodiment, the external connection is manufactured by removing the metal plate from the resin sealing body in which the region where the semiconductor element is mounted is sealed with the sealing resin, and is made of the plating layer exposed on the back side. A substrate for mounting a semiconductor element used in the manufacture of a semiconductor package whose terminals are connected to an external device such as a printed circuit board. Moreover, in the manufacturing method of the semiconductor element mounting board in which the solder connection portion is made visible, void defects in the film of the plating layer forming the external connection terminal are prevented while suppressing the cost, and the yield of the semiconductor element mounting board is improved. , a method for manufacturing a substrate for mounting a semiconductor element capable of improving productivity is obtained.

Next, an embodiment of the method for manufacturing a substrate for mounting a semiconductor element according to the present invention will be described.
Example 1
First, a copper-based material having a thickness of 0.20 mm is prepared as the metal plate 10 (see FIGS. 4(a) and 4(a')), and a dry film resist is crimped on both sides as a first resist layer R1. (See FIGS. 4(b) and 4(b')).

Next, using a glass mask on which a predetermined pattern corresponding to the columnar protrusions 10b shown in FIGS. 1A and 1B is drawn, a first resist layer on one side of the metal plate 10 is formed. R1 is exposed, and the entire surface of the first resist layer R1 on the other side of the metal plate 10 is exposed. An etching resist mask 31 is formed on the upper surface of the metal plate 10 so as to cover the region corresponding to the columnar projection 10b and to open the region corresponding to the recess 10a. A resist mask 31 was formed (see FIGS. 4(c) and 4(c')).
Next, there is an opening that opens a region (region corresponding to the through hole 18 shown in FIG. 1) corresponding to a predetermined portion near the individual columnar protrusions 10b and outside the semiconductor package region, and other openings. The shielding member 35 covering the region is placed at a predetermined distance from the etching resist mask 31 formed on one side of the metal plate 10, and is then removed from one side of the metal plate 10 to a depth of 0.15 mm. By performing half-etching and forming recesses 10a at the depth of the half-etched metal plate, individual columnar projections 10b are formed, and in the vicinity of the columnar projections 10b and outside the semiconductor package area. A through-hole 18 having a diameter of 0.10 mm was formed in a region corresponding to a predetermined position (see FIGS. 4(d) and 4(d')). A ferric chloride solution was used as an etchant.
Next, the etching resist masks 31 formed on both surfaces of the metal plate 10 were removed (see FIGS. 4(e) and 4(e')).

Next, a dry film resist was pressure-bonded as a second resist layer R2 to both surfaces of the metal plate 10 (see FIGS. 4(f) and 4(f')). At this time, the air that hits the long sides of the columnar protrusions 10b that extend perpendicularly to the conveying direction of the metal plate 10 and is difficult to escape is released below the metal plate 10 through the through holes 18. bottom.
Next, a second resist layer R2 on one side of the metal plate 10 is formed using a glass mask on which a predetermined pattern corresponding to the terminal portion 12 shown in FIGS. 1(a) and 1(b) is drawn. After the exposure, the second resist layer R2 is developed, and on one side surface of the metal plate 10, the side surface and the upper surface of the columnar protrusion 10b and the periphery of the columnar protrusion 10b on the bottom surface of the recess 10a. A plating resist mask 32 having a plurality of openings in regions corresponding to the terminal portions 12 covering a predetermined region was formed (see FIGS. 4(g) and 4(g')).
Next, the openings of the plating resist mask 32 are sequentially plated with 0.01 μm Au, 0.03 μm Pd, 30.0 μm Ni, and 0.03 μm Pd to form a plurality of terminal portions. 12 was formed (see FIGS. 4(h) and 4(h')).
Next, the plating resist masks 32 formed on both surfaces of the metal plate 10 were peeled off (see FIGS. 4(i) and 4(i')) to obtain the semiconductor device mounting board 1 of Example 1. FIG.

Next, the semiconductor element 20 is flip-chip connected to the internal terminal connection portion on the surface of the terminal portion 12 of the substrate 1 for mounting a semiconductor element of Example 1 via solder 17 or the like (see FIG. 6A). A mold was set, and the semiconductor element mounting side was sealed with a sealing resin 15 (see FIG. 6(b)).
Next, the metal plate 10 was removed (see FIG. 6(c)).

At this time, the surface (rear surface) of the sealing resin body from which the metal plate 10 has been removed is formed in a convex shape on the side opposite to the side on which the semiconductor element is mounted. The plated layer constituting the terminal portion 12 to be a terminal was finished in an exposed state.
Next, it was cut into a predetermined semiconductor package size (see FIG. 6(d)). Thus, a semiconductor package 40 using the substrate 1 for mounting a semiconductor element of Example 1 was obtained (see FIG. 6(e)).
Next, the external connection terminals of the semiconductor package 40 using the semiconductor element mounting board 1 of Example 1 were soldered to the terminals of the printed board 80 as an external device, and mounted on the printed board 80 . At this time, the solder 90 melted by the reflow wets and spreads in the space provided by the formation of the stepped portion of the external connection terminal portion on the back surface of the terminal portion 12 , and the external connection portion exposed on the side surface of the semiconductor package 40 . The soldered connection portion of the terminal 12 can be visually confirmed, and the condition of the soldered connection between the semiconductor package 40 and the printed circuit board 80, which is an external device, can be visually inspected (FIGS. 7A to 7C). )reference).

Comparative example 1
In Comparative Example 1, during the half-etching process in Example 1, a region (a region corresponding to the through hole 18 shown in FIG. 1) corresponding to a predetermined portion near the individual columnar protrusions 10b and outside the semiconductor package region was formed. , and without forming the through holes 18 using the shielding member 35 that covers the other areas, by providing the recesses 10a with a depth of 0.15 mm, only the individual columnar protrusions 10b are covered. A substrate for mounting a semiconductor element was manufactured under substantially the same conditions and procedures as in Example 1 except for this.
More specifically, a dry film resist is pressure-bonded as a first resist layer to both surfaces of the metal plate 10 , and a predetermined pattern corresponding to the columnar protrusions 10b shown in FIGS . 11(a) and 11 (b) is drawn. The first resist layer on one side of the metal plate 10 is exposed using a glass mask having been coated, and the entire surface of the first resist layer on the other side of the metal plate 10 is exposed. The resist layer 1 is developed to cover the area corresponding to the columnar projection 10b shown in FIGS . An etching resist mask was formed with an opening in the region where the metal plate 10 was formed, and an etching resist mask was formed on the other side of the metal plate 10 to cover the entire surface. Next, half-etching was applied from one side of the metal plate 10 to form recesses 10a with a depth of 0.15 mm, thereby forming individual columnar protrusions 10b . Next, the etching resist mask was peeled off, and a second resist layer made of dry film resist was pressure-bonded to both surfaces of the metal plate 10 . Next, using a glass mask on which a predetermined pattern corresponding to the terminal portion 12 shown in FIGS. 11A and 11B is drawn, a second resist layer on one side of the metal plate 10 is formed. After the exposure, the second resist layer is developed to form, on one surface of the metal plate 10 , the side surface and top surface of the pillar-shaped protrusion 10b and the predetermined area around the pillar-shaped protrusion 10b on the bottom surface of the recess. A plating resist mask having a plurality of openings was formed in regions corresponding to the terminal portions 12 shown in FIGS. 11 (a) and 11 (b).
Next, the openings of the plating resist mask are sequentially plated with 0.01 μm Au, 0.03 μm Pd, 30.0 μm Ni, and 0.03 μm Pd to form a plurality of terminal portions 12 . formed.
Next, the resist masks formed on both surfaces of the metal plate 10 were peeled off, and a substrate for mounting a semiconductor element of Comparative Example 1 was obtained.

Next, as in Example 1, the semiconductor element was flip-chip connected to the internal terminal connection portion on the surface of the terminal portion of the semiconductor element mounting substrate of Comparative Example 1 via solder or the like, and a molding die (not shown) was set. , the semiconductor element mounting side was sealed with a sealing resin, and then the metal plate was removed.
At this time, the surface of the encapsulating resin body from which the metal plate has been removed is formed flat on the side opposite to the side on which the semiconductor element is mounted, and the terminal portions to be the external connection terminals are formed from the flatly formed surface of the encapsulating resin body. It was finished in a state in which the constituting plating layer was exposed.
Next, it was cut into a predetermined size of a semiconductor package. Thus, a semiconductor package using the substrate for mounting a semiconductor element of Comparative Example 1 was obtained.
Next, the external connection terminals of the semiconductor package using the semiconductor element mounting substrate of Comparative Example 1 were connected by soldering to the terminals of the printed circuit board as an external device, and mounted on the printed circuit board.

Evaluation of easiness of appearance observation of solder connection state after connection to external equipment The ease of external observation of the solder connection state after connection to the terminal of the printed circuit board was evaluated.
When each semiconductor package 40 manufactured using each of the semiconductor element mounting substrates 1 of Example 1 and Comparative Example 1 is connected to terminals of a printed circuit board 80 which is an external device, all the side surfaces of the semiconductor package 40 Solder is filled between the surface of the terminal portion 12 on the side of the external device and the terminal of the printed circuit board 80 which is the external device. It was possible to visually confirm from the side of the edge.

Film shape evaluation of the plating layer forming the terminal portion of the semiconductor device mounting substrate Semiconductor device mounting substrates arranged in 4 vertical and 4 horizontal blocks per block using the respective manufacturing methods of Example 1 and Comparative Example 1 , and external connection terminals of 1,000 semiconductor packages manufactured using the semiconductor element mounting substrates thus manufactured were visually inspected. Specifically, the number of semi-mounted device mounting substrates in which leaking outside the range of forming the plating layer due to the occurrence of voids in the plating layer forming the terminal part of each manufactured semi-mounted device mounting substrate occurs. examined.
The presence or absence of leakage of the plating layer was checked using a visual inspection apparatus equipped with a 20x optical microscope.

As a result, in the multi-row type semiconductor element mounting substrates manufactured using the manufacturing method of Comparative Example 1, 365 out of 1000 semiconductor element mounting substrates were plated for forming the terminal portions of the semiconductor element mounting substrates. Layer leakage occurred.
On the other hand, in the multi-row type semiconductor element mounting substrates manufactured using the manufacturing method of Example 1, among the 1,000 semiconductor element mounting substrates, the plating layer forming the terminal portion leaked out. The number of device mounting substrates was zero.

Although the preferred embodiments and examples of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and examples, and can be modified without departing from the scope of the present invention. Various modifications and substitutions can be made to the examples.
For example, as a method of forming the through-holes 18 together with the columnar projections 10b, predetermined holes near the individual columnar projections 10b and outside the semiconductor package region shown in FIGS. A shielding member 35 having an opening that opens the region corresponding to the site (the region corresponding to the through hole 18 shown in FIG. 1) and covering the other region is formed on one side of the metal plate 10 by etching. on the other side of the metal plate 10 shown in FIGS. In combination with an etching resist mask 31 formed so as to cover the other regions while opening regions corresponding to predetermined portions (through holes 18) located outside the semiconductor package region, the metal plate 10 is etched. Etching may be performed from both sides.

Further, for example, in the semiconductor element mounting board manufactured by the method for manufacturing a semiconductor element mounting board according to the embodiments and examples of the present invention, the through hole 18 is located near the predetermined columnar terminal portion and in the vicinity of the semiconductor package. As the predetermined portion located outside the region, any arrangement form may be used as long as it is within a range for cutting into semiconductor packages of a predetermined size as shown in FIG. 6(d).
For example, the through-holes 18 are located between the areas where the plating layers covering the respective columnar terminal portions are formed, as shown in FIGS. , for example, may be provided at positions as shown in FIGS. 8(a) to 8(e). Specifically, the positions corresponding to the edges of the range where the plating layers covering the individual columnar terminals are formed (see FIGS. 8(a) and 8(c)) and the plating layers covering the adjacent columnar terminals (See FIG. 8(b)), and positions straddling the sides of the end of the range where the plating layer covering the plurality of columnar terminals is formed (see FIG. 8(d ), see FIG. 8(e)). Also, the through hole 18 may be a circular hole or a slit-shaped elongated hole. 8(a) to 8(e) can be applied to any type of substrate for mounting a semiconductor element shown in FIGS. 1 to 3. FIG.

The method for manufacturing a substrate for mounting a semiconductor element according to the present invention is used for a semiconductor package of a type in which a terminal portion is formed of a plating layer, and external connection terminals on the back surface of the terminal portion exposed on the back side are connected to a printed circuit board or the like. It is useful in fields where this is required.

REFERENCE SIGNS LIST 1 semiconductor element mounting substrate 10 metal plate 10a concave portion 10b columnar projection portion 12 terminal portion (plating layer)
15 sealing resin
17 solder 18 through hole 20, 60 semiconductor element 21, 70 sealing resin 31 resist mask for etching 32 resist mask for plating 40 semiconductor package 51 terminal part (terminal for external connection)
51a space portion 51b groove 52 pad portion 53 support bar 61 bonding wire 71 terminal portion 71a' edge portion 71b' recess portion 73 dam bar 80 external device (printed circuit board)
81 Terminal 90 Solder 99 Bubbles (air) remaining between the metal plate and the resist film
100 roller R resist film R1 first resist layer R2 second resist layer

Claims (4)

A plurality of semiconductor element mounting substrates are arranged in multiple rows, and each semiconductor element mounting substrate is formed by providing a concave portion on one side surface of a metal plate, and is formed from four edges inside the semiconductor package region. a plurality of columnar protrusions with a height of 0.10 mm or more and 0.18 mm or less elongated toward the center; A method of manufacturing a substrate for mounting a semiconductor element, comprising:
forming, on one surface of the metal plate, an etching resist mask having openings for opening regions corresponding to the recesses and covering regions corresponding to the plurality of columnar protrusions; forming an etching resist mask covering the entire surface on the other side of the plate;
A shielding member having openings for opening regions corresponding to predetermined portions near the individual columnar projections and outside the semiconductor package region and covering other regions is provided on one side of the metal plate. Etching is performed on one surface of the metal plate while the metal plate is arranged at a predetermined distance from the formed etching resist mask to form the recess having a depth of 0.10 mm or more and 0.18 mm or less. forming the individual columnar protrusions by forming through holes in regions corresponding to predetermined portions located near predetermined columnar protrusions and outside the semiconductor package region;
removing the shielding member and removing the etching resist mask;
A resist film is crimped onto one side surface of the metal plate, which is conveyed using a conveying device, and has a plurality of openings that open predetermined regions surrounding the respective columnar projections, and other openings. forming a plating resist mask covering the region;
a step of plating a predetermined region around the columnar projection on the side surface and upper surface of the columnar projection and the bottom surface of the recess exposed from the opening of the resist mask for plating to form the terminal portion;
a step of removing the resist mask for plating;
A method for manufacturing a substrate for mounting a semiconductor device, comprising: A plurality of semiconductor element mounting substrates are arranged in multiple rows, and each semiconductor element mounting substrate is formed by providing a concave portion on one side surface of a metal plate, and is formed from four edges inside the semiconductor package region. a plurality of columnar protrusions with a height of 0.10 mm or more and 0.18 mm or less elongated toward the center; A method of manufacturing a substrate for mounting a semiconductor element, comprising:
forming, on one surface of the metal plate, an etching resist mask having openings for opening regions corresponding to the recesses and covering regions corresponding to the plurality of columnar protrusions; On the surface of the other side of the plate, there is an opening for opening a region corresponding to a predetermined portion near each of the columnar projections and outside the semiconductor package region, and for etching to cover the other region. forming a resist mask;
Etching is performed on both sides of the metal plate to form the individual columnar projections by providing the recesses with a depth of 0.10 mm or more and 0.18 mm or less, and near the predetermined columnar projections, and forming a through hole in a region corresponding to a predetermined portion located outside the semiconductor package region;
removing the etching resist mask;
A resist film is crimped onto one side surface of the metal plate, which is conveyed using a conveying device, and has a plurality of openings that open predetermined regions surrounding the respective columnar projections, and other openings. forming a plating resist mask covering the region;
a step of plating a predetermined region around the columnar projection on the side surface and upper surface of the columnar projection and the bottom surface of the recess exposed from the opening of the resist mask for plating to form the terminal portion;
a step of removing the resist mask for plating;
A method for manufacturing a substrate for mounting a semiconductor device, comprising: 3. The manufacturing of a substrate for mounting a semiconductor element according to claim 1, wherein in the step of forming the through hole, the through hole is formed to have a diameter of 0.03 mm or more and 0.12 mm or less. Method. In the step of forming the through-hole, the through-hole is formed at a predetermined portion positioned near the columnar protrusion and outside the semiconductor package region, the longitudinal direction of which is perpendicular to the conveying direction of the metal plate. 4. The method of manufacturing a substrate for mounting a semiconductor element according to claim 1, wherein the substrate is formed in a region corresponding to .

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