JP7256303B2 - Substrates for semiconductor devices and semiconductor devices - Google Patents

Description

The present invention relates to a semiconductor device in which a metal portion such as an electrode is exposed at the bottom, and a semiconductor device substrate used to manufacture the semiconductor device.

A conventional structure in which a semiconductor element is mounted on a substrate for supporting the semiconductor element, wiring is connected between the semiconductor element and metal terminals for external derivation, and then the entire substrate including the semiconductor element is covered with a protective material such as resin. There is a limit to miniaturization of semiconductor devices due to their structure. On the other hand, metal parts (leads) are formed as semiconductor element mounting parts and electrode parts, semiconductor elements are mounted on these metal parts, and after processing such as wiring, the surface side of the metal parts with semiconductor elements, wiring, etc. is formed. is sealed with a sealing material such as resin, and the metal portion is partially exposed at the bottom. It has the advantage of being able to dissipate the heat generated in the outside and is excellent in terms of heat dissipation, and is being used in the field of ultra-small semiconductor devices such as chip size.

Such semiconductor devices are manufactured by electroforming, which is a method of forming a thick plating on a conductive matrix substrate to form a semiconductor element mounting portion and an electrode portion. After sealing the surface side of the metal portion on which semiconductor elements are mounted and undergone processing such as wiring with a sealing material, only the mother substrate is removed, and a large number of integrated semiconductor devices are individually separated. It is manufactured through a manufacturing process such as cutting into pieces. An example of such a method for manufacturing a semiconductor device is disclosed in Japanese Unexamined Patent Application Publication No. 2002-9196 and Japanese Unexamined Patent Application Publication No. 2004-214265.

JP-A-2002-9196 Japanese Patent Application Laid-Open No. 2004-214265

The conventional method for manufacturing a semiconductor device has the configuration shown in the above-mentioned patent document. In forming the metal portion on the mother mold substrate, a resist layer is formed in advance on the portion of the mother mold substrate where the metal portion is not arranged. , metal parts are formed at appropriate positions by means of electroplating. Metal such as nickel, which is suitable for film formation by plating, is used for this metal part, and the surface of the metal part is generally plated with gold or silver in order to improve conductivity and bondability of wiring wires. was Also for this plating, the resist layer played a role in preventing the plating from adhering to areas other than the required areas. After removing the resist layer by dissolving it with a solvent or the like, the matrix substrate and the metal part formed on the surface thereof were supplied as a semiconductor device substrate. Using this substrate for a semiconductor device, mounting and wiring of a semiconductor element, sealing with a sealing material, etc. have been carried out in the actual manufacturing process of a semiconductor device.

In conventional substrates for semiconductor devices, metal parts of various shapes can be obtained by arranging a resist film on a mother mold substrate. Inevitably, a plate shape with various thicknesses is required, and there is a problem that it is difficult to form a shape rich in three-dimensional variation in the vertical direction.

In addition, the manufactured semiconductor devices are required to have a low profile in order to realize further miniaturization of the electronic equipment in which they are used. In order to prevent the parts from falling off, there is a limit to how thin the metal part that forms the semiconductor element mounting part and the electrode part can be made. However, there is a problem that further reduction in thickness and height is difficult.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. An object of the present invention is to provide a substrate and a semiconductor device manufactured using this semiconductor device substrate.

A substrate for a semiconductor device according to the present disclosure is used for manufacturing a semiconductor device in which a semiconductor element mounting portion and metal portions to be electrode portions are exposed at the bottom of the device, and the metal portions are formed on a mother mold substrate. In the semiconductor device substrate according to claim 1, the metal portion has a concave portion on the surface side.

As described above, according to the disclosure of the present invention, recesses are provided in the semiconductor element mounting portion and/or the electrode portion, which are metal portions formed on the mother mold substrate, and the recesses in the semiconductor element mounting portion and/or the electrode portion are provided. By reducing the thickness of the lower portion, when manufacturing a semiconductor device using a substrate for a semiconductor device, it is possible to impart favorable features to the structure of the semiconductor device according to the surface shape of the metal portion that has been changed by the concave portion. For example, the contact area between the metal part and the encapsulant of the semiconductor device is increased to the extent that the surface area of the metal part is increased by the concave portion, so that the strength of integration of the metal part can be increased. Further, by providing a concave portion in the semiconductor element mounting portion, it is possible to provide flexibility in setting the arrangement position of the semiconductor element, and to increase the degree of freedom in the structure of the manufactured semiconductor device. Furthermore, by providing a concave portion in the metal portion arranged at the separation position between the semiconductor devices, the amount of metal cut when separating the semiconductor devices can be reduced, and the wear of the cutting device can be suppressed.

Further, in the substrate for a semiconductor device according to the disclosure of the present invention, if necessary, the recess has at least the semiconductor element mounting portion of the metal portion, the semiconductor element is inserted into the recess, and the semiconductor element is mounted on the bottom of the recess. It is provided as a size that can be placed.

As described above, according to the disclosure of the present invention, a concave portion is provided in the semiconductor element mounting portion of the metal portion, and the concave portion has a size that allows the semiconductor element to be inserted and mounted in the semiconductor device manufacturing process. When a semiconductor element is inserted into a concave portion of a semiconductor element mounting portion during manufacturing of a semiconductor device, the mounting position can be lowered compared to the conventional case where the semiconductor element is mounted on the upper surface of the semiconductor element mounting portion. Since the height of the upper surface of the semiconductor element and the height of the wire connecting the electrode portion and the semiconductor element are lowered, the thickness of the semiconductor device can be reduced and the height of the semiconductor device can be reduced. In addition, since the position of the semiconductor element is lowered and the upper surfaces of the semiconductor element and the electrode portion to which the wire is bonded are brought closer to each other, the length of the wire can be shortened, and the amount of wire used can be reduced, thereby reducing the cost.

Further, in the semiconductor device substrate according to the present disclosure, at least a part of the electrode portion in the metal portion is separated for each semiconductor device among the semiconductor device positions designed on the substrate, if necessary. It is formed on the substrate as an arrangement to be cut during the cutting process, straddling the planned cutting locations that will become the side end positions of each semiconductor device after the cutting process, and the recesses are formed on the electrode portions positioned at the planned cutting locations. It is provided with a predetermined size including the portion to be removed by cutting the portion.

As described above, according to the disclosure of the present invention, in the metal portion, the recess is provided in the electrode portion located at the portion to be cut, and the recess of the electrode portion is formed during the cutting process for separating the semiconductor device in the manufacturing process of the semiconductor device. By cutting at a certain position, the cutting position is lowered by the depth of the concave portion of the electrode, the amount of metal cut in the cutting process can be reduced, and the burden on the cutting device associated with cutting can be reduced. Suppresses deterioration of the blade. In addition, in the vicinity of the cut surface, the upper surface of the electrode portion has a stepped shape due to the concave portion, so that the upper surface of the electrode portion and the sealing material of the semiconductor device are in contact with each other widely, and the electrode portion of the semiconductor device is supported. Increased strength and increased durability.

Further, in the semiconductor device substrate according to the present disclosure, the metal part has a surface metal layer formed by plating on at least the upper surface, and the surface facing the concave part has the surface metal layer formed thereon, if necessary. A metal layer is not formed.

Thus, according to the disclosure of the present invention, the surface metal layer formed on the upper surface of the metal portion is not formed around the recess, so that the thickness of the lower portion of the recess is greater than or equal to the thickness of the metal portion. The thickness of the lower portion of the concave portion can be reliably reduced by preventing the thickness of the concave portion from becoming thicker, and even when the electrode portion is partially exposed due to cutting on the side surface of the semiconductor device manufactured using the semiconductor device substrate, the concave portion can be formed. The surface metal layer is not exposed on the cut surface of the electrode part cut at a certain position, and it is possible to prevent the occurrence of events that lead to reliability deterioration such as migration originating from the surface metal layer exposed part. .

Further, in the method of manufacturing a substrate for a semiconductor device according to the present disclosure, a resist layer is formed on a predetermined portion of a mother mold substrate, and a semiconductor element mounting portion and an electrode portion of a semiconductor device are formed on a portion where the resist layer is not formed. A method for manufacturing a substrate for a semiconductor device, wherein each metal portion is formed by a plating method to obtain a substrate that can be used for manufacturing a semiconductor device having a structure in which the metal portion is exposed at the bottom, wherein the metal portion is formed by: A step of forming to a predetermined height that does not exceed the resist layer, and the formed metal part and /
Alternatively, a step of forming a new resist layer on a predetermined portion above the resist layer, and restarting formation of the metal portion on the formed another resist layer at a portion where the another resist layer is not formed. a step of additionally forming a metal portion up to a predetermined height not exceeding another resist layer; and a step of removing the resist layer and the another resist layer, respectively. is to obtain a metal portion exposed to the surface.

As described above, according to the disclosure of the present invention, in the formation of the metal portion, another resist layer is used to partially regulate the formation region of the metal portion, and the surface of the metal portion after the resist is removed has a shape based on the other resist layer. By being able to provide the metal The degree of freedom in the structure of the portion is increased, and the semiconductor device manufactured using the semiconductor device substrate can be improved based on the structure of the metal portion.

Further, in the method for manufacturing a substrate for a semiconductor device according to the present disclosure, if necessary, the another resist layer is formed on a predetermined portion above the portion of the metal portion at the time of interruption that will eventually become the semiconductor element mounting portion. After the formation of the another resist layer, the formation of the metal portion is resumed, and the metal portion is formed with a portion in contact with the side surface of another resist layer, and after the formation is completed, another resist layer is finally formed. After removing, in the semiconductor element mounting portion of the metal portion, at the portion where another resist layer was present,
It is intended to produce a hole or groove-like recess.

As described above, according to the disclosure of the present invention, another resist layer is disposed on a portion of the metal portion that will be the semiconductor element mounting portion, and another resist layer is formed on the semiconductor element mounting portion of the finally formed metal portion. By forming recesses according to the arrangement range of the resist layer, the recesses can be freely arranged by setting the shape of the resist. When the semiconductor element is inserted and arranged in the concave portion of the semiconductor element mounting portion, the arrangement position of the semiconductor element can be lowered, and the upper surface of the semiconductor element and the height of the wire or the like that joins the electrode portion and the semiconductor element are also lowered. It can be manufactured with a reduced thickness, and a low profile semiconductor device can be realized.

Further, in the method for manufacturing a semiconductor device substrate according to the present disclosure, if necessary, the separate resist layer is applied to a predetermined portion above the metal portion at the time of interruption that will eventually become the electrode portion.
It is formed in a substantially linear arrangement over a plurality of electrode portions, and after the formation of the another resist layer, when the formation of the metal portion is resumed, the metal portion is formed with a portion in contact with the side surface of the another resist layer, and after the formation is completed. ,
Finally, another resist layer is removed, and groove-shaped recesses arranged in series over a plurality of electrode portions are formed in the portions of the electrode portions of the metal portion where the other resist layer was present. It is.

As described above, according to the disclosure of the present invention, another resist layer is disposed on a portion of the metal portion that will be the electrode portion, and is aligned with the cutting target position of the electrode portion of the finally formed metal portion. By forming the recesses, it is possible to arrange the desired recesses by setting the shape of the resist. In addition, when manufacturing a semiconductor device using the obtained substrate for a semiconductor device, the electrode portions having the recesses are cut off. When separating each semiconductor device, the load of the cutting process can be reduced because the portion of the electrode section below the concave portion is thinned, and the wear of the cutting device can be suppressed.

In addition, the semiconductor device according to the disclosure of the present invention has a metal portion that serves as a semiconductor element mounting portion and an electrode portion. In a semiconductor device in which a semiconductor element is mounted on a semiconductor device, wiring is performed, and sealing is performed with a sealing material, and the back side of the metal part is exposed at the bottom of the device, a semiconductor A concave portion wider than the element is provided, the surface facing the concave portion is not formed with the surface metal layer, the semiconductor element is inserted into the concave portion, and the semiconductor element is sealed together with the sealing material. It is what is done.

As described above, according to the disclosure of the present invention, of the metal portions constituting the semiconductor device, the semiconductor element mounting portion for mounting the semiconductor element is provided with the recess, so that the semiconductor element can be placed in the recess of the semiconductor element mounting portion. In the case of inserting and arranging, the arrangement position can be lowered as compared with the conventional case of mounting on the upper surface of the semiconductor element mounting portion, and the upper surface of the semiconductor element, the wire connecting the electrode portion and the semiconductor element, etc. Since the height of the semiconductor device is also reduced, the thickness of the semiconductor device can be reduced, and the height of the semiconductor device can be reduced. In addition, since the position of the semiconductor element is lowered and the upper surfaces of the semiconductor element and the electrode portion to which the wire is bonded are brought closer to each other, the length of the wire can be shortened. .

In addition, the semiconductor device according to the disclosure of the present invention has a metal portion that serves as a semiconductor element mounting portion and an electrode portion. In a semiconductor device in which a semiconductor element is mounted on a semiconductor device, wiring is performed, and sealing is performed with a sealing material, and the back surface side of the metal portion is exposed at the bottom of the device, at least one of the side surfaces is a collective formation of a plurality of semiconductor devices. It is a cut surface generated by cutting to separate individual semiconductor devices from a state, and has an electrode part exposed as a part of the cut surface by cutting, and the electrode part exposed on the side surface is cut by the cutting process. A concave portion is provided in advance on the surface side of the electrode portion located at the planned cutting location, the surface metal layer is not formed on the surface facing the concave portion, and the surface of the electrode portion exposed on the side surface is the original is a cross-section of the lower portion of the position where the recess was, and does not include any cross-section of the surface metal layer.

As described above, according to the disclosure of the present invention, when a concave portion is provided in advance in an electrode portion of a metal portion constituting a semiconductor device, and the concave portion is set as a position to be cut and separated into individual semiconductor devices, Since the cut surface of the concave portion of the electrode portion appears at the end, the exposed portion of the electrode portion corresponds to the lower side of the original concave portion, and the surface metal layer does not appear, and the exposed portion of the surface metal layer is the starting point. In addition, since the electrode portion located at the side edge is made to have a recessed portion due to the cutting process, the contact surface with the sealing portion increases, so the strength is increased, and the strength of the semiconductor device is increased. As a result, durability and reliability are also enhanced.

1 is an enlarged view of a main part of a semiconductor device substrate according to a first embodiment of the present invention; FIG. FIG. 3 is an explanatory diagram of a resist layer forming process in the method for manufacturing a semiconductor device substrate according to the first embodiment of the present invention; FIG. 10 is an explanatory view of the first metal portion formation step in the method of manufacturing a substrate for a semiconductor device according to the first embodiment of the present invention; FIG. 4 is an explanatory diagram of a step of forming a second resist layer in the method for manufacturing a semiconductor device substrate according to the first embodiment of the present invention; FIG. 4 is an explanatory view of each process of subsequent metal portion formation, surface metal layer formation, and resist layer removal in the method of manufacturing a substrate for a semiconductor device according to the first embodiment of the present invention; 1A to 1D are explanatory diagrams of a manufacturing process of a semiconductor device using the semiconductor device substrate according to the first embodiment of the present invention; 1A and 1B are a cross-sectional view and a bottom view of a semiconductor device according to a first embodiment of the present invention; FIG. FIG. 5 is an enlarged view of a main part of a semiconductor device substrate according to a second embodiment of the present invention; FIG. 10 is an explanatory view of the first metal portion formation step in the method of manufacturing a substrate for a semiconductor device according to the second embodiment of the present invention; FIG. 10 is an explanatory diagram of a step of forming a second resist layer in the method for manufacturing a substrate for a semiconductor device according to the second embodiment of the present invention; FIG. 10 is an explanatory view of each process of subsequent metal portion formation, surface metal layer formation, and resist layer removal in the method of manufacturing a substrate for a semiconductor device according to the second embodiment of the present invention; 8A to 8D are diagrams for explaining a manufacturing process of a semiconductor device using the semiconductor device substrate according to the second embodiment of the present invention; FIG. 8A and 8B are a perspective view and a cross-sectional view of a semiconductor device according to a second embodiment of the present invention; FIG. FIG. 10 is an explanatory diagram of a step of forming a second resist layer in the method for manufacturing a semiconductor device substrate according to the third embodiment of the present invention; FIG. 11 is an explanatory view of each process of subsequent metal portion formation, surface metal layer formation, and resist layer removal in the method of manufacturing a substrate for a semiconductor device according to the third embodiment of the present invention; FIG. 10 is an explanatory diagram of a reduced state of the arrangement interval of the metal portion by the semiconductor device substrate according to the third embodiment of the present invention; FIG. 11 is an explanatory diagram of a step of forming a second resist layer in another method of manufacturing a substrate for a semiconductor device according to the third embodiment of the present invention; FIG. 11 is an explanatory diagram of a metal portion forming step in another method of manufacturing a substrate for a semiconductor device according to the third embodiment of the present invention; 10A to 10C are diagrams for explaining steps of forming a surface metal layer and removing a resist layer in another method of manufacturing a substrate for a semiconductor device according to the third embodiment of the present invention; FIG. 10 is a schematic cross-sectional view of a semiconductor device obtained using the semiconductor device substrate, and an explanatory diagram of substrate states before and after a resist layer removing step in manufacturing a semiconductor device substrate according to another embodiment of the present invention.

(First embodiment of the present invention)
A semiconductor device substrate according to a first embodiment of the present invention will be described below with reference to FIGS. 1 to 7. FIG.
In each of the drawings, the semiconductor device substrate 1 according to the present embodiment includes a matrix substrate 10 made of a conductive material, and a semiconductor device 70 formed on the matrix substrate 10 and manufactured using the substrate. The structure includes a metal portion 11 that serves as the semiconductor element mounting portion 11a or the electrode portion 11b, and a surface metal layer 13 that is formed on the surface of the metal portion 11 by plating.

As shown in FIG. 7, a semiconductor device 70 manufactured using this substrate 1 for a semiconductor device includes a metal portion 11 and a surface metal layer 13 obtained from the substrate 1 for a semiconductor device. The semiconductor element 14 mounted on the element mounting portion 11a, the wire 15 electrically connecting the semiconductor element 14 and the electrode portion 11b of the metal portion 11, and the metal portion 11 including the semiconductor element 14 and the wire 15. It is the structure provided with the sealing material 19 which covers and seals the surface side.

In this semiconductor device 70, the back side of the metal portion 11 is exposed as an electrode, a heat dissipation pad, etc. on the bottom (see FIG. 7B). It is configured such that the rear surface side of the sealing material 19 that appears is positioned substantially on the same plane. On each surface of the semiconductor device 70 other than the bottom portion, only the sealing material 19 forming the exterior of the device is exposed.

After the first resist layer 12 is formed on the mother mold substrate 10 corresponding to the portion where the metal portion 11 is not arranged, the semiconductor device substrate 1 is formed with the metal portion 11 by electroplating.
After forming a second resist layer 16 different from the resist layer corresponding to the concave portion, the metal portion 11 is additionally formed by electrolytic plating, and the surface metal layer 13 is formed on the surface of the metal portion 11 by plating. It is manufactured by removing the first resist layer 12 and the second resist layer 16 later.

Further, when manufacturing a semiconductor device using this semiconductor device substrate 1, the semiconductor element 14 is mounted on the surface side of the metal portion 11 of the semiconductor device substrate 1, and wiring and sealing with a sealing material 19 are performed. After sealing, the semiconductor device 70 is obtained by separating and removing the mother mold substrate 10 from the semiconductor device portion.

The matrix substrate 10 is formed of a conductive metal plate (about 0.1 mm thick) such as stainless steel (SUS430, etc.), aluminum, copper, or the like. The first resist layer 12 and the metal portion 11 are formed on the front surface side, and the resist layer 18 is provided on the back surface side at each stage of the semiconductor device substrate manufacturing process. . When the metal part 11 is formed, an electric current is passed through the mother mold substrate 10, so that the metal part is formed by electroplating on the part of the surface of the mother mold substrate 10 that is not covered with the first resist layer 12 and can be energized. 11 will be formed. Also, when the surface metal layer 13 is plated, electricity is passed through the matrix substrate 10 in the case of electroplating.

On the other hand, in the manufacturing process of a semiconductor device using the substrate 1 for a semiconductor device, the surface side of the metal part 11 on the mother mold substrate 10 is covered with the sealing material 19 (see FIG. 6B), and the mother mold substrate 10 is covered with the metal part 11 . When sufficient strength is obtained without supporting the portion 11 and the sealing material 19, the matrix substrate 10 is separated and removed from them (see FIG. 6(C)). If the matrix substrate 10 is made of stainless steel, a method of physically peeling it off from the semiconductor device side by applying force is adopted. A removing etching method is used. In the case of etching, an etchant having a selective etching property that dissolves the matrix substrate 10 but does not affect the material such as nickel of the metal portion 11 is used.
When the mother substrate 10 is removed, the semiconductor element mounting portion 11a and the electrode portion 11b of the metal portion 11 and the back surfaces of the sealing material 19 are exposed on the same plane at the bottom of the semiconductor device.

The metal portion 11 is made of nickel, copper, or a nickel alloy such as nickel-cobalt, which is suitable for electrolytic plating, and is formed by electrolytic plating on a portion of the mother mold substrate 10 where the first resist layer 12 is absent. be. In the semiconductor device substrate 1, the metal portion 11 is formed on the surface of the mother mold substrate 10, and the number of semiconductor devices to be manufactured is determined by using the combination of the semiconductor element mounting portion 11a and the plurality of electrode portions 11b arranged in the vicinity thereof as one unit. Only a large number of the combinations are arranged in an aligned state.

The metal part 11 has a thickness exceeding the thickness of the first resist layer 12 (for example, a thickness of about 60 to 8 mm).
0 μm), and an overhanging portion 11c extending toward the first resist layer 12 is formed on the upper peripheral edge of the upper end.
is formed as a shape having a During electroplating, the protruding portion 11c continues electroplating even after the metal portion 11 is formed to the thickness of the first resist layer 12, and the metal portion is grown in the thickness direction to form the first resist layer 12. By proceeding in other directions without limitation, a shape projecting from the upper end portion of the metal portion 11 beyond the first resist layer 12 toward the first resist layer 12 can be obtained. This protruding portion 11 c is formed by the sealing material 19 as it is sealed with the sealing material 19 .
It will be in a state of being sandwiched and fixed.

In addition, the semiconductor element mounting portion 11a of the metal portion 11 is provided with a concave portion 11e into which the semiconductor element 14 can be inserted and mounted during the manufacture of the semiconductor device. When the semiconductor chip 14 is inserted into the concave portion 11e, the position of the semiconductor chip 14 can be lowered by the depth of the concave portion as compared with the conventional case where the semiconductor chip 14 is mounted on the upper surface of the semiconductor chip mounting portion. can be done. The recess 11e is formed in the form of a hole or groove by disposing the second resist layer 16 in a portion corresponding to the recess 11e in the semiconductor element mounting portion 11a during the formation of the metal portion 11.
The depth is such that the semiconductor element mounting portion 11a can sufficiently secure the thickness necessary for maintaining the required strength below the portion e.

Most of the metal portion 11 is made of nickel, nickel alloy, or the like, which is suitable for electroplating. A thin film 11d made of metal, such as gold, tin, palladium, or solder, which has better solder wettability than the main material portion such as nickel, is provided. The thickness of this thin film 11d is 0.03 to 1
It is preferable to make it about μm.

When forming the metal portion 11, the thin film 11d is formed on the first resist layer 1 on the mother mold substrate 10 in advance.
After the portion without 2 is formed by plating or the like (see FIG. 3B), the main material portion such as nickel is further formed on the thin film 11d by electroplating. In this thin film 11d,
A function of preventing corrosion and deterioration of the metal portion 11 due to the etchant can be given when the mother mold substrate 10 is removed by etching.

It should be noted that the formation of the thin film on the back surface side of the metal portion 11 is not limited to before the main material portion of the metal portion 11 is formed by electrolytic plating if the purpose is to prevent soldering, but after the semiconductor device 70 is completed. Alternatively, a thin film may be formed on the exposed rear surface of the metal portion 11 by plating.

The first resist layer 12 is formed of an insulating material that is resistant to dissolution in a plating solution used for electrolytic plating of the metal part 11 and plating of the surface metal layer 13, and is set on the mother board 10 in advance. It is arranged corresponding to the non-arrangement portion of the metal portion 11, and is removed after the formation of the metal portion 11 and the surface metal layer 13 (see FIG. 5(C)).

This first resist layer 12 is disposed on the mother mold substrate 10 prior to the formation of the metal portion 11,
Specifically, a known photosensitive resist agent is adhered to the mother mold substrate 10 to a predetermined thickness, for example, a thickness of about 50 μm, and a predetermined pattern corresponding to the position of the metal portion 11 of the semiconductor device 70 is formed. In the state where the mask film 50 is placed, it is cured by exposure to ultraviolet irradiation (see FIG. 2C), and development is performed to remove the photosensitive material in the non-irradiated portion. It is formed in a corresponding shape.

Like the first resist layer 12, the second resist layer 16 is made of an insulating material that is resistant to dissolution in the plating solution. It is disposed corresponding to the recess 11e and is removed after the metal portion 11 and the surface metal layer 13 are formed. As for the second resist layer 16, a photosensitive resist agent or the like can be used as in the case of the first resist layer 12. FIG. This resist agent is coated on each surface of the metal part 11 and the first resist layer 12 to a predetermined thickness, for example, a thickness exceeding about 60 μm, and a mask having a predetermined pattern corresponding to the position of the concave portion 11e of the metal part 11. With the film 51 placed thereon, the second resist layer 16 in a fixed state is formed on the metal part 11 by performing curing by exposure to ultraviolet rays. Due to the second resist layer 16 on the metal portion 11, electroplating does not proceed in the portion corresponding to the recess 11e of the metal portion 11, and the missing portion of the metal portion 11, that is, the recess 11e is generated.

Note that the first resist layer 12 and the second resist layer 16 are not limited to the photosensitive resist, and a paint that can provide a coating film with high strength without being degraded by the plating solution is used on the mother mold substrate 10. It is also possible to apply a coating such as electrodeposition coating to the portion where the metal portion 11 is not arranged or the position of the concave portion 11e of the metal portion 11 so as to obtain the necessary coating thickness.

On the other hand, apart from the first resist layer 12 and the second resist layer 16 on the surface side, the matrix substrate 10
A resist layer 18 is also formed on the rear surface side of (see FIG. 2). The resist layer 18 on the back side is made of a resist material that is resistant to the plating solution in a hardened state and that can be easily dissolved and removed when it becomes unnecessary, for example, an alkali development type photosensitive film resist with a thickness of about 50 μm. It can be disposed by thermocompression bonding or the like, and cured and formed over the entire back surface through treatment such as exposure by ultraviolet irradiation without a mask.

The surface metal layer 13 is formed as a plated film made of gold, silver, or the like, which is excellent in bondability with the gold wire or the like forming the wire 15 for wiring.
The surface metal layer 13 is formed on the surface of the metal part 11 by a plating bath for each mother board 10 to a predetermined thickness, for example, approximately 0.1 to 1 μm in the case of gold plating and approximately 1 to 10 μm in the case of silver plating. Formed as a thick plating. At the time of plating the surface metal layer 13, since the back side of the mother board 10 is covered with the resist layer 18, plating does not adhere (see FIG. 5(B)).
When plating the surface metal layer 13, a plating solution corresponding to the metal to be plated is used, such as using a different plating solution from that used for plating the metal portion 11. FIG.

When the surface metal layer 13 is plated, if the metal portion 11 is made of nickel, the plating is difficult to adhere. , silver strike, or gold strike) to enhance the adhesion of the surface metal layer 13 to the metal portion 11 .

The semiconductor element 14 is a so-called chip in which a fine electronic circuit is formed.
1, it is inserted into the concave portion 11e of the semiconductor element mounting portion 11a and mounted by bonding. and,
A wiring (bonding) wire 15 made of a conductive wire such as gold or copper is attached to the semiconductor element 14 .
The electrode provided on the surface and the electrode portion 11b formed independently of the semiconductor element mounting portion 11a of the metal portion 11 are respectively joined to electrically connect the semiconductor element 14 and the electrode portion 11b. Become.

Since the semiconductor element 14 is inserted into the concave portion 11e of the semiconductor element mounting portion 11a, the position of the semiconductor element 14 can be lowered compared to the conventional case where the semiconductor element 14 is mounted on the upper surface of the semiconductor element mounting portion. Since the upper surface of the semiconductor element 14 and the wires 15 to be bonded are also lowered, the thickness of the semiconductor device 70 can be reduced and the height of the semiconductor device 70 can be reduced. In addition, the position of the semiconductor element 14 is lowered, and the semiconductor element 14 to which the wire 15 is bonded and the upper surfaces of the electrode portions are closer to each other, so that the length of the wire can be shortened, and the amount of wire used can be reduced, thereby reducing the cost.

The sealing material 19 is a thermosetting epoxy resin or the like having high physical strength, and seals the semiconductor element 14 and the wires 15 on the surface side of the metal part 11 while covering the semiconductor element 14 and the wires 15 . This is a protected state in which structurally weak parts are isolated from the outside. In addition, the semiconductor element 1
If 4 is a light-emitting element such as an LED, a translucent material is used.

The sealing process using this sealing material 19 is performed on the semiconductor device substrate 1, and the mother mold substrate 1
After covering the range of the semiconductor device with the metal part 11 and the like on the surface side of 0 with a mold that will be the upper mold, the sealing material 19 before hardening is press-fitted between this mold and the mother mold substrate 10. Then, the sealing is completed by curing the sealing material 19 . However, in the encapsulation process, a large number of combinations of the semiconductor element mounting portion 11a and the plurality of electrode portions 11b, which constitute one semiconductor device, are uniformly encapsulated while being aligned. 19 are connected to each other.

The encapsulant 19 has sufficient physical strength, functions to sufficiently protect the inside as a part of the exterior of the semiconductor device 70, and allows the mother mold substrate 10 to be peeled off from the semiconductor device side. Even when the metal part 11 is physically removed by applying a force such as the above, the integrated state with the metal part 11 is maintained without breakage such as cracking.

Next, each process of manufacturing the semiconductor device substrate according to the present embodiment and manufacturing a semiconductor device using the semiconductor device substrate will be described.
As a process for manufacturing a substrate for a semiconductor device, first, a first resist layer 12 is provided on a mother mold substrate 10 corresponding to a predetermined portion on the mother mold substrate 10 where the metal portion 11 is not arranged. Specifically, a photosensitive resist agent 12a is adhered to the surface of the mother mold substrate 10 so as to have a predetermined thickness (for example, about 50 μm) corresponding to the height of the metal portion 11 to be formed ( Figure 2(B)
reference). For the photosensitive resist agent, a mask film 50 having a predetermined pattern corresponding to the arrangement position of the metal portion 11 is put thereon, and cured by exposure to ultraviolet irradiation (see FIG. 2(C)).
Then, a known process such as development is performed to remove the resist agent from the non-irradiated portions, and the first resist layer 12 corresponding to the non-arranged portions of the metal portion 11 is hardened and formed (see FIG. 3A). Also, a photosensitive resist agent is provided on the back side of the mother mold substrate 10 in the same way as on the front side, and the entire back surface is subjected to a treatment such as exposure, and a resist layer 18 is hardened over the entire back surface. (Fig. 2
(C)).

After forming the resist layers 12 and 18 having dissolution resistance against the plating solution used for plating the metal part 11 in this way, the exposed portions of the surface of the mother mold substrate 10 not covered with the first resist layer 12 are covered with the necessary resist layers. Surface oxide film removal and surface activation treatment are performed according to the conditions. After that, a gold thin film 11d for improving solder wettability is applied to the exposed portion by plating or the like to a thickness of, for example, 0.03 to 1 μm.
It is formed with a thickness of m (see FIG. 3B). Then, nickel is laminated on the thin film 11d by electroplating to form the metal portion 11 (see FIG. 3C).

In this initial step of forming the metal portion 11, the metal portion 11 is formed to have a predetermined thickness (for example, less than 50 μm thick) that does not exceed the thickness of the first resist layer 12 (see FIG. 3C). . In the metal part 11, on the surface of the mother mold substrate 10, a combination of a semiconductor element mounting part 11a and a plurality of electrode parts 11b arranged in the vicinity of the semiconductor element mounting part 11a is set as one unit. It will be formed in a form arranged in a state.

After forming the metal portion 11 to a predetermined thickness, the operation of forming the metal portion by electroplating is temporarily interrupted, and after cleaning the surface, a semiconductor element mounting portion of the metal portion 11 is formed on the metal portion 11 formed to the predetermined thickness. A second resist layer 16 is provided corresponding to the recess 11e of 11a.
Specifically, a photosensitive resist agent 16a is applied to the surface side of the metal portion 11 and the first resist layer 12,
They are arranged in close contact so as to have a predetermined thickness (for example, about 50 μm) greater than the depth of the recess 11e (see FIG. 4A). With respect to this photosensitive resist agent, the concave portion 1 of the semiconductor element mounting portion 11a
With a mask film 51 having a predetermined pattern corresponding to the arrangement position of 1e placed thereon, known processing such as curing by exposure to ultraviolet irradiation (see FIG. 4(B)) and development to remove the resist agent from non-irradiated portions. to harden and form the second resist layer 16 corresponding to the portion where the concave portion 11e is to be formed (see FIG. 4(C)).

After forming the second resist layer 16, the metal portion 1 not covered with the second resist layer 16 is removed.
After subjecting the exposed portion of 1 to a known surface treatment, such as cleaning treatment and adhesion treatment, as required, the step of forming a metal portion 11 by laminating nickel by electroplating is performed again. is formed to a predetermined thickness (for example, a thickness of about 60 μm) (FIG. 5 (
A)).

The metal portion 11 is formed to have a thickness that exceeds the thickness of the first resist layer 12 but does not exceed the upper surface of the second resist layer 16, and has a portion in contact with the side surface of the second resist layer 16. A substantially eaves-like overhanging portion 11c overhanging toward the first resist layer 12 is formed on the upper end peripheral edge of the metal portion 11 near the layer 12 . In the process of forming the metal portion 11 by this new electrolytic plating,
The metal part 11 is not formed in the place where the second resist layer 16 is arranged.

After obtaining the desired thickness and shape of the metal part 11, the plating bath for each mother board 10 is
A surface metal layer 13 is formed on the surface of the metal portion 11 to a predetermined thickness, for example, a thickness of about 0.5 mm in the case of silver plating.
It is formed to have a thickness of 3 to 0.4 μm (see FIG. 5B). Since the first resist layer 12 and the second resist layer 16 have sufficient resistance to the plating solution used in the plating bath,
It is possible to maintain the function as a resist layer and prevent the adhesion of plating to portions other than the necessary portions such as the metal portion 11 without deterioration or the like. In addition, since the back side of the mother board 10 is covered with the resist layer 18 during the plating of the surface metal layer 13, the plating does not adhere.

After forming the surface metal layer 13, the first resist layer 12 and the second resist layer 1 on the surface side of the matrix substrate 10
6 and the resist layer 18 on the back side are dissolved with a predetermined remover and removed respectively (FIG. 5).
(C)), the semiconductor device substrate 1 is completed. After the second resist layer 16 is removed, a hole- or groove-like concave portion 11e is formed in the semiconductor element mounting portion 11a of the metal portion 11 where the second resist layer 16 was present.

Next, the manufacturing of a semiconductor device using the obtained semiconductor device substrate 1 will be described.
First, the concave portion 11 of the semiconductor element mounting portion 11a of the metal portion 11 of the semiconductor device substrate 1 is
e, the semiconductor element 14 is inserted and mounted with an adhesive interposed therebetween to be fixed by bonding, and gold wires or the like are attached to the electrodes on the surface of the semiconductor element 14 and the corresponding electrode portions 11b. wires 15 are joined to electrically connect the semiconductor element 14 and each electrode portion 11b (FIG. 6A
)reference). This electrical connection by wiring is performed by a known ultrasonic bonding apparatus or the like. Since the surface metal layer 13 is formed on the surface of the electrode portion 11b, the connection with the wire 15 can be ensured, and the reliability of the connection can be improved.

After the connection between the semiconductor element 14 and each electrode portion 11b is completed, the area of the semiconductor device including the metal portion 11 on the surface side of the mother board 10 is sealed with a sealing material 19 such as a thermosetting epoxy resin. Then, the semiconductor element 14 and the wire 15 are in a protected state isolated from the outside (see FIG. 6B). Specifically, the surface side of the mother mold substrate 10 is mounted on a molding die serving as an upper mold, and the mother mold substrate 1 is mounted.
0 plays the role of a lower mold, sealing is performed in the process of press-fitting uncured epoxy resin as a sealing material 19 into the molding die, and one semiconductor device is formed on the mother mold substrate 10. A large number of combinations of the semiconductor element mounting portion 11a and the plurality of electrode portions 11b are uniformly sealed in an aligned state, and a large number of semiconductor devices appear in a connected state.

After obtaining a large number of connected semiconductor devices, the base substrate 10 is removed to obtain a state in which the back side of the metal portion 11 is exposed at the bottom of each semiconductor device (see FIG. 6C). The mother substrate 10 made of stainless steel is removed by physically peeling off the mother substrate 10 from the semiconductor device side. By using a stainless material excellent in strength and peelability for the mother substrate 10, the mother substrate 10 can be quickly separated and removed by peeling it off from the semiconductor device side.

In addition, when the matrix substrate is made of another metal material, a method of dissolving the matrix substrate by immersing it in an etchant can be used as a method for removing the matrix substrate. In the case of this etching, an etchant having a selective etching property that dissolves the matrix substrate but does not affect the materials of the metal portion 11 and the surface metal layer 13 is used. When dissolving and removing
Since an excessive force is not applied to the semiconductor device side, the probability of adverse effects due to removal of the base substrate can be reduced.

At the bottom of the semiconductor device from which the base substrate 10 has been removed, the exposed back side of the metal portion 11 and the back side of the sealing material 19 are positioned on the same plane. After removing the mother mold substrate 10,
The semiconductor device 70 is completed by separating the connected semiconductor devices one by one.

Inside the obtained semiconductor device 70, the upper end peripheral edge of the metal part 11 is formed as an overhanging portion 11c to protrude in a substantially eave-like shape. Since it is surrounded and fixed, the overhanging portion 11 bites into the sealing material 19 which is tightly integrated with the resins and serves as a resistor against the external force applied to the metal portion 11. When stainless steel or the like is used for the mold substrate 10 and the mother mold substrate 10 is removed from the semiconductor device side by physically peeling it off, even if an external force is applied to the back side of the metal portion 11 to pull it away from the exterior of the device. The protruding portion 11 prevents the movement of the metal portion 11, and the displacement of the metal portion 11 with respect to other portions can be eliminated, so that the yield in manufacturing can be improved, the strength as a semiconductor device can be increased, and the durability in use can be improved. The reliability and reliability of the operation of the semiconductor device are also improved.

As described above, the substrate for a semiconductor device according to the present embodiment has the concave portion 11e provided in the semiconductor element mounting portion 11a which is the metal portion 11 formed on the mother mold substrate 10, and the semiconductor element mounting portion 11a has the concave portion 11e below the concave portion 11e. Since the thickness of the side portion is reduced and the recess 11e is made large enough to insert and mount the semiconductor element 14 in the semiconductor device manufacturing process, the semiconductor device 70 using this semiconductor device substrate 1 is manufactured. The metal part 11 that has been changed by the concave part 11e in manufacturing
For example, the semiconductor element 14 can be inserted into the concave portion 11e of the semiconductor element mounting portion 11a and placed on the upper surface of the semiconductor element mounting portion 11a as in the conventional art. Compared to the case of mounting, the arrangement position can be lowered, and the height of the upper surface of the semiconductor element 14 and the height of the wire 15 or the like that joins the electrode portion 11b and the semiconductor element 14 can be lowered, so that the thickness of the semiconductor device 70 can be reduced. The semiconductor device 70 can be manufactured in a smaller size, and the height of the semiconductor device 70 can be reduced. In addition, since the position of the semiconductor element 14 is lowered and the upper surfaces of the semiconductor element 14 and the electrode portion 11b to which the wire 15 is bonded are brought closer to each other, the length of the wire can be shortened, thereby reducing the amount of wire used and the cost. can.

(Second embodiment of the present invention)
In the semiconductor device substrate 1 according to the first embodiment, the semiconductor element mounting portion 11a of the metal portion 11 is provided with the concave portion 11e. Although the element 14 is mounted thereon, as a second embodiment, as shown in FIG.
It is also possible to provide the recessed portion 11g in the semiconductor device manufacturing process, and cut the recessed portion of the electrode portion to obtain the individual cut semiconductor devices 71 .

The semiconductor device substrate 2 according to the present embodiment includes a mother mold substrate 10, as in the first embodiment,
It has a metal portion 11 and a surface metal layer 13, and is different in that the electrode portion 11f of the metal portion 11 is positioned at a portion to be cut in a cutting process performed later in the semiconductor device manufacturing process. It has a configuration formed on the substrate as an arrangement that is cut in two during the cutting process. The electrode portion 11f is provided with a recess 11g having a predetermined size including a portion to be removed during cutting.

As shown in FIG. 13, a semiconductor device 71 manufactured using this semiconductor device substrate 2 is composed of:
Similar to the first embodiment, the metal portion 11, the surface metal layer 13, the semiconductor element 14, the wire 15, and the sealing material 19 are provided. , is arranged to be exposed not only on the bottom of the device but also on the side.

Each side surface of the semiconductor device 71 is a cut surface produced by a cutting process that separates individual semiconductor devices from a collective state of a plurality of semiconductor devices. Due to the mounting needs of semiconductor devices,
When adopting a structure in which the electrode portion is exposed not only on the bottom portion but also on the side surface, the electrode portion is also cut because it is positioned on a part of the side surface, which is the cut surface.

Therefore, in the semiconductor device substrate 2, of the semiconductor device positions designed on the substrate, the planned cutting portion Y, which will become the side end position of each semiconductor device through the cutting process in the subsequent semiconductor device manufacturing, is adjacent to the cutting position Y. A metal portion as an electrode portion is formed on the substrate so as to straddle two semiconductor device positions and be cut into two by a cutting process so that the side end portions of each semiconductor form an electrode portion. (see Figure 8).

When the electrode portion is positioned at the corner portion of the semiconductor device, the metal portion to be the electrode portion is cut into four pieces at the intersection of the straight cutting positions on the substrate for the semiconductor device, and each of them can be cut without problems. It is formed to have a size and arrangement that form an electrode portion.

Then, in the semiconductor device substrate 2, groove-like recesses 11g are provided on the surface side of the electrode portion so as to be positioned at the planned cutting portion in the step of forming the metal portion for forming the electrode portion. This concave portion 1
1g, as in the case of the first embodiment, the second resist layer 16 is disposed in correspondence with the concave portion 11g (see FIG. 10) during the formation of the metal portion 11 (see FIG. 10), and the formation of the metal portion 11 is completed. This is caused by not forming the metal part 11 at the position of the second resist layer 16 when the process is restarted. As in the first embodiment, since the second resist layer 16 is present even in the step of forming the surface metal layer 13, the surface metal layer is not formed on the portion of the metal portion 11 facing the concave portion 11g (FIG. 1
1(B)).

The size of the concave portion 11g in the metal portion 11 to be the electrode portion 11f on the semiconductor device substrate 2 overlaps with the portion to be cut of the electrode portion 11f, and is cut with a cutting blade having a predetermined non-zero thickness in the cutting process. The portion A, which is removed by the action, is set so as to surely fall within the range of the concave portion (see FIG. 12(C)). In addition, the recess 11g has the electrode portion 11 on its lower side.
The depth i is such that a sufficient thickness can be secured to maintain the required strength until cutting in the semiconductor device manufacturing process.

Since the surface of the electrode portion 11f exposed on the side surface of each semiconductor device 71 through the cutting process in the semiconductor device manufacturing process is the cross section of the lower portion of the position where the original recess 11g was, the surface metal layer does not include any cross section (see FIG. 13(B)).

Next, each process of manufacturing the semiconductor device substrate according to the present embodiment and manufacturing a semiconductor device using the semiconductor device substrate will be described.
As a manufacturing process of a substrate for a semiconductor device, first, a resist layer 12 is formed on the front and back of a mother mold substrate 10.
, 18 and the step of forming the metal portion 11 up to a predetermined thickness on the portion of the surface of the mother mold substrate 10 not covered with the first resist layer 12, respectively. It is the same as the case of the first embodiment except that the formation position is partially changed based on the shape of the electrode portion 11f, and detailed description thereof will be omitted.

After the metal portion 11 is formed to a predetermined thickness (see FIG. 9), the metal portion forming operation is interrupted and the surface is cleaned.
A second resist layer 16 is disposed corresponding to the position of the preset recess 11g of 1f (see FIG. 10). The second resist layer 16 is formed in a substantially linear arrangement extending over the plurality of electrode portions 11f at predetermined portions above the metal portions 11 that will eventually become the electrode portions 11f among the metal portions 11 at the time of interruption of formation.

Metal portion 11 not covered with second resist layer 16 after forming second resist layer 16
The step of forming the metal portion 11 to a predetermined thickness on the exposed portion of (see FIG. 11A), the step of forming the surface metal layer 13 on the surface of the metal portion 11 (see FIG. 11B), and , a first resist layer 12, a second resist layer 16, and a resist layer 18 on the front side of the matrix substrate 10
are removed (see FIG. 11C) to complete the semiconductor device substrate 2, as in the first embodiment.

After the second resist layer 16 is removed, groove-like recesses 11g arranged in series over the plurality of electrode portions 11f are placed in the electrode portions 11f of the metal portion 11 where the second resist layer 16 was present. are generated respectively (see FIG. 8).

Subsequently, in manufacturing a semiconductor device using the semiconductor device substrate 2, a step of mounting and fixing the semiconductor element 14 to the semiconductor element mounting portion 11a of the metal portion 11 of the semiconductor device substrate 2; and the surface metal layer 13 portion of each electrode portion 11b to establish an electrical connection (see FIG. 12A); A step of sealing the range with a sealing material 19 (see FIG. 12B), and a step of removing the mother mold substrate 10 from the semiconductor devices in a state of being connected in a number obtained by sealing (see FIG. 12C). ) are sequentially executed in the same manner as in the first embodiment, and detailed description thereof will be omitted.

After the mother substrate 10 is removed, the connected semiconductor devices are cut along predetermined cutting positions to separate the semiconductor devices 71 one by one. In this step of cutting the semiconductor device, the cutting position overlaps with the recessed portion 11g of the electrode portion 11f.
During the cutting process, the hardened sealing material 19 is cut, and each electrode portion 11f becomes the concave portion 11.
It is cut sequentially at the position of g.

Since the recessed portion 11g serves as the cutting position, the cutting position is lowered by the depth of the recessed portion, and the amount of metal cut in the cutting process is reduced compared to the conventional case where the electrode portion is formed at a uniform height. It is possible to reduce the abrasion of the blade portion (dicing blade) of the cutting device that accompanies cutting.

Further, when cutting the semiconductor device, if the cutting position is positioned from the surface side covered with the encapsulant 19 and cutting is performed, if the encapsulant 19 is a transparent material, the encapsulant 19 can be used. Since the concave portion 11g of the electrode portion 11f can be identified through the electrode portion 11f, the concave portion 11g can be used as a mark of the cutting position, and the cutting can be performed with high accuracy.

The cut electrode portion 11f is exposed on the side surface of the semiconductor device 71 obtained by cutting (
See Figure 13). The portion of the electrode portion 11f exposed on the side surface of the semiconductor device corresponds to the lower portion of the portion where the recess 11g is provided so as to be positioned in advance at the portion to be cut.
Since the surface metal layer is not formed on the surface of the electrode portion 11f at the position 1g,
A cross section of the surface metal layer is not included (see FIG. 13(B)).

In this way, although a part of the electrode portion 11f is exposed on the side surface of the semiconductor device, the surface metal layer is not exposed. It is possible to prevent the occurrence of such events that lead to a decrease in reliability.
In addition, since there was originally a concave portion 11g above the exposed portion of the electrode portion 11f on the side surface, the upper surface of the electrode portion 11f covered with the sealing material 19 in the vicinity thereof has a stepped shape 11h ( 13(B)), the contact surface between the upper surface of the electrode portion and the sealing material 19 is increased as compared with the case of a simple flat surface, so that the support strength of the electrode portion is improved, and the durability as a semiconductor device is also enhanced. be done.

(Third embodiment of the present invention)
In the manufacture of the semiconductor device substrate according to the first embodiment, in the first step of forming the metal portion 11, after forming the metal portion 11 to a predetermined thickness not exceeding the thickness of the first resist layer 12,
Interrupting the formation of the metal portion, forming and disposing a second resist layer 16 on the metal portion 11 so as to correspond to the position of the concave portion, and further, on the exposed portion of the metal portion 11 not covered with the second resist layer 16. On the other hand, the step of forming the metal portion 11 is performed again, and the final shape of the metal portion 11 is obtained while the shape of the metal portion 11 is controlled by the appropriately arranged second resist layer 16 . 3
As an embodiment, between the two steps of forming the metal part 11, the second resist layer 16 is formed in a predetermined range on the first resist layer 12 (see FIG. 14), and in the metal part forming step later Alternatively, the upper portion of the metal portion 11 can be adjusted to a predetermined size by limiting the formation range of the metal portion with the second resist layer 16 (see FIG. 15).

For example, by forming the metal part 11 beyond the thickness of the first resist layer 12, the upper edge of the metal part 11 near the first resist layer 12 has a substantially eaves-like shape protruding toward the first resist layer 12 side. A projecting portion 11i is formed (see FIG. 15A). At this time, since the second resist layer 16 is provided on the first resist layer 12, the formation range of the projecting portion 11i is restricted by the second resist layer 16, and the side surface of the second resist layer 16 is formed. It is formed with a contacting part. As a result, the amount of extension of the extension portion 11i is controlled to a predetermined amount based on the preset arrangement of the second resist layer 16 .

In this case, each of the metal portions 11 adjacent to each other on the mother mold substrate 10 has an overhanging portion 11i on its upper portion, and these overhanging portions 11i can be adjusted to form a predetermined appropriate interval. The arrangement intervals of the metal parts on 10 can be made smaller than before. That is, in the conventional process, the amount of overhang of the overhanging portion above the metal portion 11 cannot be strictly controlled. However, in the present embodiment, since the amount of protrusion of the overhanging portion 11i can be adjusted by the arrangement of the second resist layer 16, even if the arrangement interval of the metal portion 11 is reduced, the overhanging portion 11i The amount can be suppressed to the extent that the resist can be removed without any problem, and the minimum distance between the adjacent metal portions 11 can be set to an appropriate amount.

In addition, the arrangement interval of the metal parts is such that the minimum amount of protrusion required to obtain sufficient strength against removal of the protrusions 11i can be secured, and the remover of the first resist layer 12 can reach between the metal parts. The size can be reduced as long as the resist layer 12 can be properly removed (see FIG. 16). As a result, the semiconductor devices formed on the semiconductor device substrate 3 can be further miniaturized, and the formation density of the semiconductor devices on the semiconductor device substrate 3 can be increased, thereby improving the efficiency of manufacturing the semiconductor devices.

In this way, the second resist layer 16 is arranged on the first resist layer 12, and the second resist layer 1
6, in addition to the above, as shown in FIG. It is also possible to perform the steps of forming the metal portion and then forming the metal portion. By performing the formation of the metal portion in one step, the efficiency of manufacturing can be further improved.

In this case, as a method of manufacturing a substrate for a semiconductor device, resist layers 1 are formed on the front and back of the mother mold substrate 10 .
2 and 18, respectively, and overhanging portion 11 above first resist layer 12.
The second resist layer 16 corresponding to the position where the formation of the metal portion 11 formed as i is desired to be suppressed.
a step of forming the metal portion 11 to a predetermined thickness on a portion of the surface of the mother mold substrate 10 not covered with the first resist layer 12 or the second resist layer 16; It can be said that it includes a step of forming the metal layer 13 and a step of removing the first resist layer 12, the second resist layer 16, and the back side resist layer 18 on the front side of the matrix substrate 10, respectively.

Specifically, each step of manufacturing these substrates for a semiconductor device will be described. First, the steps of forming resist layers 12 and 18 on the front and back surfaces of a mother mold substrate 10 are executed, respectively, as in the first embodiment. , and detailed description is omitted.

Subsequently, in the step of forming the second resist layer 16, the first resist layer 1 formed first
2, a second resist layer 16 is disposed corresponding to the range where the formation of the metal portion 11 is desired to be suppressed. Specifically, a photosensitive resist agent 16 a is applied to the surface side of the mother mold substrate 10 and the first resist layer 12 .
are arranged in close contact so as to have a predetermined thickness (for example, about 50 μm) (see FIG. 17(B)).
. A mask film 51 having a predetermined pattern corresponding to a position where it is desired to suppress the formation of the metal portion 11 as the projecting portion 11i is placed on the photosensitive resist agent, and then cured by exposure to ultraviolet light (FIG. 17(C)). (see FIG. 18A), a known process such as development is performed to remove the resist agent from the non-irradiated portions, and the second resist layer 16 corresponding to the portions where the metal portions 11 are not to be formed is cured (see FIG. 18A).

After the second resist layer 16 is formed, exposed portions of the surface of the mother mold substrate 10 not covered with the first resist layer 12 and the second resist layer 16 are subjected to known surface oxide film removal and surface activation as necessary. process. Thereafter, a gold thin film 11d for improving solder wettability is formed on the exposed portion by plating or the like to a thickness of, for example, 0.05 to 1 μm (see FIG. 18B). Then, nickel is laminated on the thin film 11d by electroplating to form the metal portion 11 (see FIG. 18(C)).

In this process of forming the metal portion 11, the metal portion 11 is formed to have a predetermined thickness (for example, a thickness of about 60 μm) that exceeds the thickness of the first resist layer 12 but does not exceed the upper surface of the second resist layer 16. At the upper edge of the metal part 11 near the first resist layer 12, a substantially eaves-shaped overhanging part 11i overhanging to the side of the first resist layer 12 is formed with a part in contact with the side surface of the second resist layer 16. (See FIG. 18(C)). Since the formation range of the projecting portion 11i is regulated by the second resist layer 16 arranged so that the metal portion 11 is not formed, the projecting amount of the projecting portion 11i is set in advance. As in the first embodiment, the metal portion 11 is a semiconductor device manufactured by using a combination of a semiconductor element mounting portion 11a and a plurality of electrode portions 11b arranged in the vicinity of the semiconductor element mounting portion 11a on the surface of the mother mold substrate 10 as one unit. The same number of combinations as the number of devices are arranged in an aligned state.

After forming the metal portion 11 to a predetermined thickness, a step of forming a surface metal layer 13 on the surface of the metal portion 11 (see FIG. 19A), and a first resist layer 12 on the surface side of the mother substrate 10, The process of removing the second resist layer 16 and the resist layer 18 on the back surface side (see FIG. 19B) is performed to complete the semiconductor device substrate 4, which is the same as in the first embodiment. .

In this way, following the step of forming the first resist layer 12 on the mother mold substrate 10, the second resist layer 16 is formed, and then the metal portion 11 is formed. In addition to being able to control the formation range of the metal portion 11 (extending portion 11i) reaching the upper side of one resist layer 12, by forming each resist layer collectively first and forming the metal portion 11 in one step,
After the second resist layer 16 is formed, it is possible to omit the step of resuming the formation of the metal portion after cleaning the existing metal portion 11, thereby improving the production efficiency.

The series of steps of forming the first resist layer 12 on the matrix substrate 10, followed by forming the second resist layer 16, and then forming the metal portion 11 may be performed on the semiconductor element mounting portion or the electrode. It can also be applied to a part of the metal part that becomes the part to form a through hole in the metal part. Specifically, a first resist layer 12 is formed at a location where a through hole is to be provided in the metal portion, and a second resist layer 16 is disposed thereon. If the metal portion is formed in the through-hole, the through-hole whose upper opening shape is adjusted by the appropriately arranged second resist layer 16 will be formed after the resist is removed. When the size of the hole is sufficiently larger than the amount of protrusion of the metal portion 11 toward the first resist layer 12, the second resist layer 16 is not provided and only the first resist layer 12 is formed at the hole position. You may make it produce a hole.

In addition, a through-hole may be provided so as to overlap with the portion of the metal portion where the concave portion is provided.
As an example, a case of forming through-holes between metal portions that will be electrode portions of adjacent semiconductor devices will be described. Then, a second resist layer 16 is formed on the portions where the recesses and through holes are desired. The second resist layer is formed so as to straddle the metal portion and the first resist layer at locations where both the recess and the through hole are to be formed.

After that, additional formation of a metal portion and formation of a surface metal layer are further performed (see FIG. 20A), and finally, when each resist layer is removed, a semiconductor device semiconductor device having a concave portion 11j and a through hole 11k is formed. A substrate 5 is obtained (see FIG. 20(B)). In the example shown in FIG. 20, in the manufacturing process of the semiconductor device, the through hole 11k is positioned exactly at the portion to be removed between the electrode portions 11l by cutting when dividing the individual semiconductor devices after sealing. As a result of the removal of the sealing material 19 present in the through-hole portion during cutting, a portion of the electrode portion 11l is exposed on the side surface of the semiconductor device 72 obtained by cutting (FIG. 20(C)). )reference). Since the through hole 11k serves as the cutting position, even when obtaining a configuration in which the electrode portion is exposed on the side surface of the semiconductor device as in the second embodiment, it is not necessary to cut the metal in the cutting process. It is possible to reduce the wear of the blade (dicing blade) of the cutting device that accompanies cutting.

Reference Signs List 1, 2, 3, 4 semiconductor device substrate 10 mother mold substrate 11 metal portion 11a semiconductor element mounting portion 11b, 11f electrode portion 11c, 11i projecting portion 11d thin film 11e, 11g recess 11h step 11j recess 11k through hole 11l electrode portion 12 First resist layer 12a Resist agent 13 Surface metal layer 14 Semiconductor element 15 Wire 16 Second resist layer 16a Resist agent 18 Resist layer 19 Sealing material 50, 51 Mask film 70, 71, 72 Semiconductor device

Claims (4)

A semiconductor device substrate comprising a semiconductor element mounting portion and/or a metal portion serving as an electrode portion on a mother mold substrate,
A concave portion is provided on the surface of the metal portion,
A protruding portion is formed at the upper end of the metal portion,
The projecting portion has an upper surface formed continuously with the surface of the metal portion,
A surface metal layer is formed on the surface of the metal portion, and the surface metal layer is not formed on the surface facing the recess,
A substrate for a semiconductor device, wherein the height position of the projecting portion is within the range of the depth of the recess. The projecting portion has a lower surface parallel to the surface of the metal portion,
2. The semiconductor device substrate according to claim 1, wherein the height position of said lower surface of said projecting portion is within the range of the depth of said recess. A semiconductor element, a metal part that serves as a semiconductor element mounting part and/or an electrode part, and a sealing material that covers and seals the surface side of the semiconductor element and the metal part, and the back surface of the metal part is provided on the bottom of the device. A semiconductor device in which is exposed,
A concave portion is provided on the surface of the metal portion,
A protruding portion is formed at the upper end of the metal portion,
The projecting portion has an upper surface formed continuously with the surface of the metal portion,
A surface metal layer is formed on the surface of the metal portion, and the surface metal layer is not formed on the surface facing the recess,
A semiconductor device, wherein the height position of the projecting portion is within the range of the depth of the recess. The projecting portion has a lower surface parallel to the surface of the metal portion,
4. The semiconductor device according to claim 3, wherein the height position of said lower surface of said protrusion is within the range of the depth of said recess.

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