JP7243795B2

JP7243795B2 - semiconductor equipment

Info

Publication number: JP7243795B2
Application number: JP2021181915A
Authority: JP
Inventors: 茂樹佐藤
Original assignee: Fuji Electric Co Ltd
Current assignee: Fuji Electric Co Ltd
Priority date: 2017-04-06
Filing date: 2021-11-08
Publication date: 2023-03-22
Anticipated expiration: 2037-04-06
Also published as: JP2022010152A

Description

本発明は、半導体装置に関する。 The present invention relates to semiconductor devices.

従来、絶縁ゲート型バイポーラトランジスタ（ＩＧＢＴ）等のメイントランジスタ素子に流れる電流を検出するべく、センス用トランジスタ素子をメイントランジスタ素子と並列に設けた半導体装置が知られている（例えば、特許文献１参照）。
特許文献１特開２００９－９９６９０号公報 Conventionally, there has been known a semiconductor device in which a sensing transistor element is provided in parallel with a main transistor element such as an insulated gate bipolar transistor (IGBT) in order to detect current flowing through the main transistor element (see, for example, Patent Document 1). ).
Patent document 1 Japanese Patent Application Laid-Open No. 2009-99690

センス用トランジスタ素子は、メイントランジスタ素子に比べて半導体基板に占める面積が非常に小さい。このため、ゲート容量等に差異が生じ、スイッチングのタイミングがずれてしまう場合がある。このため、半導体装置が通常に動作している場合でも、センス用トランジスタ素子に過大な電流が流れてしまう場合がある。 The sense transistor element occupies a much smaller area on the semiconductor substrate than the main transistor element. For this reason, a difference occurs in the gate capacitance and the like, and the timing of switching may be deviated. Therefore, even when the semiconductor device operates normally, an excessive current may flow through the sensing transistor element.

本発明の第１の態様においては、半導体基板を備える半導体装置を提供する。半導体装置は、半導体基板の上面に設けられた上面電極を備えてよい。半導体装置は、半導体基板の上面に設けられ、上面電極とは分離しているセンス用電極を備えてよい。半導体装置は、半導体基板の下面に設けられた下面電極を備えてよい。半導体装置は、半導体基板に設けられ、上面電極および下面電極に接続されたメイントランジスタ部を備えてよい。半導体装置は、半導体基板に設けられ、上面電極および下面電極に接続されたメインダイオード部を備えてよい。半導体装置は、半導体基板に設けられ、センス用電極および下面電極に接続されたセンスダイオード部を備えてよい。センスダイオード部は、半導体基板の内部に設けられた第１導電型のドリフト領域を有してよい。センスダイオード部は、ドリフト領域と半導体基板の上面との間に設けられた第２導電型のアノード領域を有してよい。センスダイオード部は、半導体基板の下面とドリフト領域との間に設けられ、且つ下面電極に接続する第１導電型のカソード領域を有してよい。 A first aspect of the present invention provides a semiconductor device comprising a semiconductor substrate. The semiconductor device may include a top electrode provided on the top surface of the semiconductor substrate. The semiconductor device may include a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode. The semiconductor device may include a bottom electrode provided on the bottom surface of the semiconductor substrate. The semiconductor device may include a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode. The semiconductor device may include a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode. The semiconductor device may include a sense diode section provided on the semiconductor substrate and connected to the sensing electrode and the lower surface electrode. The sense diode section may have a first conductivity type drift region provided inside the semiconductor substrate. The sense diode portion may have a second conductivity type anode region provided between the drift region and the top surface of the semiconductor substrate. The sense diode section may have a cathode region of the first conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode.

メイントランジスタ部は、半導体基板の内部に設けられた第１導電型のドリフト領域を有してよい。メイントランジスタ部は、ドリフト領域と半導体基板の上面との間に設けられ、ドリフト領域よりも不純物濃度の高い第１導電型のソース領域を有してよい。メイントランジスタ部は、ドリフト領域とソース領域との間に設けられた第２導電型のベース領域を有してよい。メイントランジスタ部は、半導体基板の上面からドリフト領域に達するまで設けられ、且つ、半導体基板の上面において予め定められた延伸方向に沿って延伸して設けられたゲートトレンチ部を有してよい。メイントランジスタ部は、半導体基板の上面においてゲートトレンチ部の延伸方向における先端部分と重なって設けられ、且つ、半導体基板の上面からゲートトレンチ部の先端部分よりも深く設けられ、ベース領域よりも不純物濃度の高い第２導電型の第１ウェル領域を有してよい。センスダイオード部は、第１ウェル領域の外側に設けられていてよい。メイントランジスタ部は、ドリフト領域と半導体基板の上面との間に設けられた第２導電型のベース領域を有してよい。メイントランジスタ部は、ベース領域と半導体基板の上面との間に選択的に設けられ、ドリフト領域よりも不純物濃度の高い第１導電型のソース領域を有してよい。メイントランジスタ部は、ベース領域と半導体基板の上面との間に選択的に設けられ、ベース領域よりも不純物濃度が高い第２導電型のコンタクト領域を有してよい。メイントランジスタ部は、半導体基板の上面からドリフト領域に達するまで設けられ、且つ、半導体基板の上面において延伸方向に沿って延伸して設けられたダミートレンチ部を有してよい。メイントランジスタ部は、半導体基板の下面とドリフト領域との間に設けられ、且つ下面電極に接続する第２導電型のコレクタ領域を有してよい。メインダイオード部は、半導体基板内部に設けられたドリフト領域を有してよい。メインダイオード部は、ドリフト領域と半導体基板の上面との間に設けられたベース領域を有してよい。メインダイオード部は、半導体基板の上面からドリフト領域に達するまで設けられ、且つ、半導体基板の上面において延伸方向に沿って延伸して設けられたダミートレンチ部を有してよい。メインダイオード部は、半導体基板の下面とドリフト領域との間に設けられ、且つ下面電極に接続する第１導電型のカソード領域を有してよい。第１ウェル領域は、半導体基板に設けられた全てのゲートトレンチ部および全てのダミートレンチ部を囲むように設けられてよい。 The main transistor section may have a first conductivity type drift region provided inside the semiconductor substrate. The main transistor section may have a first conductivity type source region provided between the drift region and the upper surface of the semiconductor substrate and having a higher impurity concentration than the drift region. The main transistor portion may have a base region of the second conductivity type provided between the drift region and the source region. The main transistor section may have a gate trench section extending from the upper surface of the semiconductor substrate to the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate. The main transistor portion is provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and has an impurity concentration higher than that of the base region. may have a first well region of the second conductivity type with a high . The sense diode section may be provided outside the first well region. The main transistor portion may have a base region of the second conductivity type provided between the drift region and the upper surface of the semiconductor substrate. The main transistor section may have a first conductivity type source region selectively provided between the base region and the upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region. The main transistor section may have a second conductivity type contact region selectively provided between the base region and the upper surface of the semiconductor substrate and having a higher impurity concentration than the base region. The main transistor section may have a dummy trench section extending from the upper surface of the semiconductor substrate to the drift region and extending along the extending direction on the upper surface of the semiconductor substrate. The main transistor section may have a collector region of the second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode. The main diode section may have a drift region provided inside the semiconductor substrate. The main diode section may have a base region provided between the drift region and the top surface of the semiconductor substrate. The main diode section may have a dummy trench section extending from the upper surface of the semiconductor substrate to the drift region and extending along the extension direction on the upper surface of the semiconductor substrate. The main diode section may have a cathode region of the first conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode. The first well region may be provided so as to surround all gate trench portions and all dummy trench portions provided in the semiconductor substrate.

センスダイオード部は、半導体基板の上面において予め定められた領域を囲んで設けられ、且つ、半導体基板の上面から半導体基板の内部まで設けられた、ベース領域よりも不純物濃度の高い第２ウェル領域を有してよい。 The sense diode section is provided surrounding a predetermined region on the upper surface of the semiconductor substrate, and includes a second well region having a higher impurity concentration than the base region, which is provided from the upper surface of the semiconductor substrate to the inside of the semiconductor substrate. may have

第２ウェル領域は、第１ウェル領域よりも不純物濃度が高くてよい。第２ウェル領域は、第１ウェル領域よりも深く設けられていてよい。センスダイオード部は、ドリフト領域を有してよい。半導体基板の上面において第２ウェル領域が囲む領域には、半導体基板の上面とドリフト領域との間に設けられた、第２導電型のアノード領域が設けられていてよい。センスダイオード部は、半導体基板の上面において第２ウェル領域が囲む領域に設けられていてよい。 The second well region may have a higher impurity concentration than the first well region. The second well region may be provided deeper than the first well region. The sense diode section may have a drift region. A second conductivity type anode region provided between the upper surface of the semiconductor substrate and the drift region may be provided in a region surrounded by the second well region on the upper surface of the semiconductor substrate. The sense diode section may be provided in a region surrounded by the second well region on the upper surface of the semiconductor substrate.

半導体基板の上面において、アノード領域と第２ウェル領域との間の少なくとも一部の領域には、第１導電型の領域が設けられていてよい。 A region of the first conductivity type may be provided in at least a part of the upper surface of the semiconductor substrate between the anode region and the second well region.

半導体装置は、半導体基板の上面において、第１ウェル領域と、第２ウェル領域との間に設けられ、且つ、半導体基板の上面から半導体基板の内部まで設けられ、メイントランジスタ部およびメインダイオード部から、センスダイオード部へのキャリアの移動を抑制する素子分離部を備えてよい。 The semiconductor device is provided between the first well region and the second well region on the upper surface of the semiconductor substrate, is provided from the upper surface of the semiconductor substrate to the inside of the semiconductor substrate, and is provided from the main transistor portion and the main diode portion. and an element isolation portion that suppresses movement of carriers to the sense diode portion.

半導体装置は、半導体基板の上面において、メイントランジスタ部およびメインダイオード部を囲んで設けられた耐圧構造部を備えてよい。センスダイオード部は、半導体基板の上面において、耐圧構造部の外側に配置されていてよい。センスダイオード部は、半導体基板の上面において、半導体基板の角部に配置されていてよい。センスダイオード部は、半導体基板の上面において、耐圧構造部の内側に配置されていてよい。 The semiconductor device may include a breakdown voltage structure provided on the upper surface of the semiconductor substrate so as to surround the main transistor section and the main diode section. The sense diode section may be arranged outside the breakdown voltage structure section on the upper surface of the semiconductor substrate. The sense diode section may be arranged at a corner of the semiconductor substrate on the upper surface of the semiconductor substrate. The sense diode section may be arranged inside the breakdown voltage structure section on the upper surface of the semiconductor substrate.

半導体基板の上面において、複数のセンスダイオード部が分離して設けられていてよい。 A plurality of sense diode portions may be separately provided on the upper surface of the semiconductor substrate.

なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。 It should be noted that the above summary of the invention does not list all the necessary features of the invention. Subcombinations of these feature groups can also be inventions.

本発明の一つの実施形態に係る半導体装置１００の一例を示す上面図である。1 is a top view showing an example of a semiconductor device 100 according to one embodiment of the present invention; FIG. 半導体基板１０の上面を部分的に示す図である。2 is a diagram partially showing the upper surface of a semiconductor substrate 10; FIG. 図２におけるＡ－Ａ断面の一例を示す図である。FIG. 3 is a diagram showing an example of a cross section taken along line AA in FIG. 2; 図２におけるＢ－Ｂ断面の一例を示す図である。FIG. 3 is a diagram showing an example of a BB cross section in FIG. 2; 半導体装置１００を含む、出力装置２００の一例を示す図である。1 is a diagram showing an example of an output device 200 including a semiconductor device 100; FIG. いずれかの半導体装置１００の動作例を示す図である。FIG. 4 is a diagram showing an operation example of one of the semiconductor devices 100; 半導体装置１００の他の例を示す上面図である。3 is a top view showing another example of the semiconductor device 100; FIG. 図７に示した半導体装置１００におけるＹＺ断面の一例を示す図である。8 is a diagram showing an example of a YZ cross section in the semiconductor device 100 shown in FIG. 7; FIG. センスダイオード部１２０の他の例を示す断面図である。4 is a cross-sectional view showing another example of the sense diode section 120; FIG. センスダイオード部１２０の他の例を示す断面図である。4 is a cross-sectional view showing another example of the sense diode section 120; FIG. 半導体装置１００の他の例を示す上面図である。3 is a top view showing another example of the semiconductor device 100; FIG. 半導体装置１００の他の例を示す上面図である。3 is a top view showing another example of the semiconductor device 100; FIG. 半導体装置１００の他の例を示す上面図である。3 is a top view showing another example of the semiconductor device 100; FIG.

以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は特許請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。 Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. Also, not all combinations of features described in the embodiments are essential for the solution of the invention.

本明細書においては半導体基板の深さ方向と平行な方向における一方の側を「上」、他方の側を「下」と称する。基板、層またはその他の部材の２つの主面のうち、一方の面を上面、他方の面を下面と称する。「上」、「下」の方向は、重力方向または半導体装置の実装時における方向に限定されない。 In this specification, one side in a direction parallel to the depth direction of the semiconductor substrate is called "upper", and the other side is called "lower". One of the two main surfaces of a substrate, layer or other member is called the upper surface and the other surface is called the lower surface. The directions of “up” and “down” are not limited to the direction of gravity or the direction when the semiconductor device is mounted.

本明細書では、Ｘ軸、Ｙ軸およびＺ軸の直交座標軸を用いて技術的事項を説明する。直交座標軸は、構成要素の相対位置を特定するに過ぎず、特定の方向を限定するものではない。例えば、Ｚ軸は地面に対する高さ方向を限定して示すものではない。なお、＋Ｚ軸方向と－Ｚ軸方向とは互いに逆向きの方向である。正負を記載せず、Ｚ軸方向と記載した場合、＋Ｚ軸および－Ｚ軸に平行な方向を意味する。 In this specification, technical matters are described using X-axis, Y-axis and Z-axis orthogonal coordinate axes. The Cartesian coordinate axes only specify the relative positions of the components and do not limit any particular orientation. For example, the Z axis does not limit the height direction with respect to the ground. Note that the +Z-axis direction and the −Z-axis direction are directions opposite to each other. When the Z-axis direction is described without indicating positive or negative, it means a direction parallel to the +Z-axis and -Z-axis.

各実施例においては、第１導電型をＮ型、第２導電型をＰ型とした例を示しているが、第１導電型をＰ型、第２導電型をＮ型としてもよい。この場合、各実施例における基板、層、領域等の導電型は、それぞれ逆の極性となる。 In each embodiment, an example in which the first conductivity type is the N type and the second conductivity type is the P type is shown, but the first conductivity type may be the P type and the second conductivity type may be the N type. In this case, the conductivity types of substrates, layers, regions, etc. in each embodiment have opposite polarities.

図１は、本発明の一つの実施形態に係る半導体装置１００の一例を示す上面図である。半導体装置１００は、半導体基板１０を備える。本例の半導体装置１００は、半導体基板１０に形成された半導体チップである。本例では、半導体基板１０の上面と平行な面をＸＹ面として、ＸＹ面と垂直な方向（すなわち、半導体基板１０の深さ方向）をＺ軸方向とする。本例の半導体基板１０は、上面視において、Ｘ軸に平行な辺と、Ｙ軸に平行な辺とを有する矩形形状である。 FIG. 1 is a top view showing an example of a semiconductor device 100 according to one embodiment of the invention. A semiconductor device 100 includes a semiconductor substrate 10 . A semiconductor device 100 of this example is a semiconductor chip formed on a semiconductor substrate 10 . In this example, the plane parallel to the upper surface of the semiconductor substrate 10 is defined as the XY plane, and the direction perpendicular to the XY plane (that is, the depth direction of the semiconductor substrate 10) is defined as the Z-axis direction. The semiconductor substrate 10 of this example has a rectangular shape having sides parallel to the X-axis and sides parallel to the Y-axis when viewed from above.

半導体装置１００は、半導体基板１０に設けられたメイン素子部１１０およびセンスダイオード部１２０を備える。メイン素子部１１０は、半導体装置１００の動作時に半導体基板１０の上面および下面の間で主電流が流れる領域であって、１つ以上のメイントランジスタ部７０と、１つ以上のメインダイオード部８０を有する。 A semiconductor device 100 includes a main element section 110 and a sense diode section 120 provided on a semiconductor substrate 10 . The main element portion 110 is a region through which a main current flows between the upper and lower surfaces of the semiconductor substrate 10 during operation of the semiconductor device 100, and includes one or more main transistor portions 70 and one or more main diode portions 80. have.

メイントランジスタ部７０には、ＩＧＢＴ等のトランジスタ素子が形成される。メインダイオード部８０には、還流ダイオード（ＦＷＤ）等のダイオード素子が形成される。メイントランジスタ部７０およびメインダイオード部８０は、Ｘ軸方向において交互に配置されてよい。 A transistor element such as an IGBT is formed in the main transistor section 70 . A diode element such as a free wheel diode (FWD) is formed in the main diode section 80 . The main transistor portions 70 and the main diode portions 80 may be alternately arranged in the X-axis direction.

センスダイオード部１２０は、メイン素子部１１０におけるいずれかのノードの電圧が、所定の電圧範囲内か否かを検出する。本例のセンスダイオード部１２０は、メイントランジスタ部７０に含まれるＩＧＢＴのコレクタ電圧が、所定の電圧範囲内か否かを検出する。本例のセンスダイオード部１２０は、カソード端子にＩＧＢＴのコレクタ電圧が印加される。センスダイオード部１２０のアノード端子には、通常動作時にはセンスダイオード部１２０が順バイアスとなり、ＩＧＢＴのコレクタ電圧が所定値以上となった場合にセンスダイオード部１２０が逆バイアスとなるような電圧が印加される。センスダイオード部１２０の状態に基づいて、ＩＧＢＴのコレクタ電圧が所定値以上となったか否かを検出できる。メイントランジスタ部７０に過電流が流れるとＩＧＢＴのコレクタ電圧が上昇するので、センスダイオード部１２０を設けることで過電流を検出できる。 The sense diode section 120 detects whether the voltage of any node in the main element section 110 is within a predetermined voltage range. The sense diode section 120 of this example detects whether or not the collector voltage of the IGBT included in the main transistor section 70 is within a predetermined voltage range. The collector voltage of the IGBT is applied to the cathode terminal of the sense diode section 120 of this example. A voltage is applied to the anode terminal of the sense diode section 120 so that the sense diode section 120 is forward biased during normal operation and is reverse biased when the collector voltage of the IGBT exceeds a predetermined value. be. Based on the state of the sense diode section 120, it is possible to detect whether or not the collector voltage of the IGBT has reached or exceeded a predetermined value. Since the collector voltage of the IGBT rises when an overcurrent flows through the main transistor section 70, the overcurrent can be detected by providing the sense diode section 120. FIG.

センスダイオード部１２０は、ゲート制御を行わないので、センス用のトランジスタ素子のように、メイントランジスタ部７０とのスイッチングタイミングのずれが生じない。また、順バイアス時にセンスダイオード部１２０に流れる電流を小さくすることで、センスダイオード部１２０における損失は非常に小さくできる。 Since the sense diode section 120 does not perform gate control, there is no deviation in switching timing from the main transistor section 70, unlike the transistor element for sensing. Also, by reducing the current flowing through the sense diode section 120 during forward bias, the loss in the sense diode section 120 can be greatly reduced.

また、センスダイオード部１２０をメインダイオード部８０と同一の半導体基板１０に形成することで、メインダイオード部８０と同一の工程でセンスダイオード部１２０を形成できる。また、半導体装置１００の外部に、センス用のダイオード素子を付加しなくてよいので、部品点数を低減できる。 Further, by forming the sense diode portion 120 on the same semiconductor substrate 10 as the main diode portion 80, the sense diode portion 120 can be formed in the same process as the main diode portion 80. FIG. Moreover, since it is not necessary to add a diode element for sensing to the outside of the semiconductor device 100, the number of parts can be reduced.

また、センス用のトランジスタを形成する場合、Ｎ＋型のソース領域等の微細な領域を形成するので特性のバラツキが大きくなるが、センスダイオード部１２０は微細なソース領域等を形成しないので、特性のバラツキを低減できる。また、センスダイオード部１２０を微細化することが容易なので、半導体装置１００を微細化しても、半導体装置１００にセンスダイオード部１２０を内蔵することが容易となる。 Further, when a transistor for sensing is formed, fine regions such as an N + -type source region are formed, so that variations in characteristics become large. Variation can be reduced. Further, since it is easy to miniaturize the sense diode section 120, it becomes easy to incorporate the sense diode section 120 into the semiconductor device 100 even if the semiconductor device 100 is miniaturized.

本例の半導体装置１００は、半導体基板１０の上面に、１つ以上のパッド１１４を備える。それぞれのパッド１１４は、メイン素子部１１０等に電気的に接続される。例えばいずれかのパッド１１４は、メインダイオード部８０におけるゲート電極またはエミッタ電極に電気的に接続される。また、いずれかのパッド１１４は、半導体基板１０に設けられた温度検出用のダイオードに電気的に接続されていてもよい。 The semiconductor device 100 of this example includes one or more pads 114 on the upper surface of the semiconductor substrate 10 . Each pad 114 is electrically connected to the main element section 110 and the like. For example, one of pads 114 is electrically connected to the gate electrode or emitter electrode in main diode section 80 . Also, one of the pads 114 may be electrically connected to a temperature detection diode provided on the semiconductor substrate 10 .

本例の半導体装置１００は、半導体基板１０の上面においてメイン素子部１１０を囲んで設けられた耐圧構造部１１２を備える。耐圧構造部１１２は、ガードリングまたはフィールドプレート等を有しており、半導体基板１０の内部の空乏層を半導体基板１０の端部まで延伸させる。これにより、半導体装置１００の耐圧を向上させている。 The semiconductor device 100 of this example includes a breakdown voltage structure portion 112 that surrounds a main element portion 110 on the upper surface of the semiconductor substrate 10 . The breakdown voltage structure 112 has a guard ring, a field plate, or the like, and extends the depletion layer inside the semiconductor substrate 10 to the edge of the semiconductor substrate 10 . Thereby, the breakdown voltage of the semiconductor device 100 is improved.

本例においてそれぞれのパッド１１４は、半導体基板１０の上面において耐圧構造部１１２が囲む領域に配置される。センスダイオード部１２０は、半導体基板１０の上面において耐圧構造部１１２が囲む領域に配置されてよく、耐圧構造部１１２の外側に配置されてもよい。図１の例では、センスダイオード部１２０は、半導体基板１０の上面において耐圧構造部１１２が囲む領域に配置されている。 In this example, each pad 114 is arranged in a region surrounded by the breakdown voltage structure 112 on the upper surface of the semiconductor substrate 10 . The sense diode section 120 may be arranged in a region surrounded by the breakdown voltage structure section 112 on the upper surface of the semiconductor substrate 10 , or may be arranged outside the breakdown voltage structure section 112 . In the example of FIG. 1, the sense diode section 120 is arranged in a region surrounded by the breakdown voltage structure section 112 on the upper surface of the semiconductor substrate 10 .

図２は、半導体基板１０の上面を部分的に示す図である。本例の半導体装置１００は、メイン素子部１１０において、半導体基板１０の内部に設けられたゲートトレンチ部４０、ダミートレンチ部３０、ソース領域１２、ベース領域１４、コンタクト領域１５および第１ウェル領域１７を備える。また、本例の半導体装置１００は、半導体基板１０の上面の上方に設けられたエミッタ電極５２およびゲート配線部５１を備える。エミッタ電極５２は、アルミニウム等の導電材料で形成されている。ゲート配線部５１は、不純物がドープされたポリシリコン等の導電材料で形成されている。 FIG. 2 is a diagram partially showing the upper surface of the semiconductor substrate 10. As shown in FIG. In the semiconductor device 100 of this example, the gate trench portion 40 provided inside the semiconductor substrate 10 , the dummy trench portion 30 , the source region 12 , the base region 14 , the contact region 15 and the first well region 17 are formed in the main element portion 110 . Prepare. The semiconductor device 100 of this example also includes an emitter electrode 52 and a gate wiring portion 51 provided above the upper surface of the semiconductor substrate 10 . The emitter electrode 52 is made of a conductive material such as aluminum. The gate wiring portion 51 is made of a conductive material such as polysilicon doped with impurities.

エミッタ電極５２とゲート配線部５１との間、および、エミッタ電極５２と半導体基板１０の上面との間には絶縁膜が設けられるが、図２では省略している。本例では、コンタクトホール５４およびコンタクトホール５６が、当該絶縁膜を貫通して設けられる。 An insulating film is provided between the emitter electrode 52 and the gate wiring portion 51 and between the emitter electrode 52 and the upper surface of the semiconductor substrate 10, but is omitted in FIG. In this example, a contact hole 54 and a contact hole 56 are provided through the insulating film.

エミッタ電極５２は、コンタクトホール５４等を通って、半導体基板１０の上面におけるソース領域１２、コンタクト領域１５、ベース領域１４および第１ウェル領域１７と接触する。本例のコンタクトホール５４は、Ｘ軸方向に沿って配列されたそれぞれのトレンチ部の間に設けられている。また、エミッタ電極５２は、コンタクトホール５６を通って、ダミートレンチ部３０内のダミー導電部と接続される。エミッタ電極５２とダミー導電部との間には、不純物がドープされたポリシリコン等の、導電性を有する材料で形成された接続部５７が設けられてよい。接続部５７は、熱酸化膜等の絶縁膜を挟んで、半導体基板１０の上面に設けられる。本例においてコンタクトホール５６は、Ｙ軸方向におけるダミートレンチ部３０の先端に配置される。 Emitter electrode 52 contacts source region 12 , contact region 15 , base region 14 and first well region 17 on the upper surface of semiconductor substrate 10 through contact hole 54 and the like. The contact holes 54 of this example are provided between respective trench portions arranged along the X-axis direction. Also, the emitter electrode 52 is connected to the dummy conductive portion in the dummy trench portion 30 through the contact hole 56 . Between the emitter electrode 52 and the dummy conductive portion, a connection portion 57 made of a conductive material such as impurity-doped polysilicon may be provided. The connection portion 57 is provided on the upper surface of the semiconductor substrate 10 with an insulating film such as a thermal oxide film interposed therebetween. In this example, the contact hole 56 is arranged at the tip of the dummy trench portion 30 in the Y-axis direction.

ゲート配線部５１と半導体基板１０との間には、熱酸化膜等の絶縁膜が設けられる。ゲート配線部５１は、半導体基板１０の上面において、ゲートトレンチ部４０内のゲート導電部と接続される。ゲート配線部５１は、ダミートレンチ部３０内のダミー導電部とは接続されない。 An insulating film such as a thermal oxide film is provided between the gate wiring portion 51 and the semiconductor substrate 10 . The gate wiring portion 51 is connected to the gate conductive portion in the gate trench portion 40 on the upper surface of the semiconductor substrate 10 . The gate wiring portion 51 is not connected to the dummy conductive portion within the dummy trench portion 30 .

１つ以上のゲートトレンチ部４０および１つ以上のダミートレンチ部３０は、半導体基板１０の上面においてＸ軸方向に沿って所定の間隔で配列される。メイントランジスタ部７０においては、１つ以上のゲートトレンチ部４０および１つ以上のダミートレンチ部３０が、Ｘ軸方向に沿って交互に配置されている。メインダイオード部８０においては、１つ以上のダミートレンチ部３０が、Ｘ軸方向に沿って配置されている。 One or more gate trench portions 40 and one or more dummy trench portions 30 are arranged at predetermined intervals along the X-axis direction on the upper surface of the semiconductor substrate 10 . In the main transistor portion 70, one or more gate trench portions 40 and one or more dummy trench portions 30 are alternately arranged along the X-axis direction. In the main diode section 80, one or more dummy trench sections 30 are arranged along the X-axis direction.

本例のゲートトレンチ部４０は、Ｙ軸方向に沿って直線形状に延伸する直線部分４１と、直線部分４１の先端において２つの直線部分４１を接続する先端部分４３を有してよい。先端部分４３の少なくとも一部は、半導体基板１０の上面において曲線状に形成されることが好ましい。ゲートトレンチ部４０の２つの直線部分４１の先端を先端部分４３で接続することで、直線部分４１の端部における電界集中を緩和できる。 The gate trench portion 40 of this example may have a linear portion 41 extending linearly along the Y-axis direction and a tip portion 43 connecting the two linear portions 41 at the tip of the linear portion 41 . At least a portion of tip portion 43 is preferably formed in a curved shape on the upper surface of semiconductor substrate 10 . By connecting the tips of the two straight portions 41 of the gate trench portion 40 with the tip portion 43, electric field concentration at the ends of the straight portions 41 can be alleviated.

ゲートトレンチ部４０のそれぞれの直線部分４１の間には、１つ以上のダミートレンチ部３０が設けられる。ダミートレンチ部３０は、ゲートトレンチ部４０と同様に、２つの直線部分と先端部分を有するＵ字形状であってよく、先端部分を有さずに直線部分だけの直線形状であってもよく、Ｕ字形状と直線形状が混在していてもよい。ダミートレンチ部３０は、ゲート配線部５１とは重ならない位置に設けられる。 One or more dummy trench portions 30 are provided between each straight portion 41 of the gate trench portion 40 . Like the gate trench portion 40, the dummy trench portion 30 may have a U-shape having two straight portions and a tip portion, or may have a straight shape with only a straight portion without a tip portion. A U-shape and a linear shape may be mixed. The dummy trench portion 30 is provided at a position not overlapping the gate wiring portion 51 .

半導体基板１０の上面において、それぞれのトレンチ部の直線部分に挟まれた領域には、第２導電型のベース領域１４が設けられる。本例のベース領域１４はＰ－型である。ベース領域１４の上面には、ベース領域１４よりもドーピング濃度の高い第２導電型（本例ではＰ＋型）のコンタクト領域１５が選択的に設けられる。 A base region 14 of the second conductivity type is provided on the upper surface of the semiconductor substrate 10 in a region sandwiched between the straight portions of the respective trench portions. The base region 14 in this example is P-type. A contact region 15 of a second conductivity type (P+ type in this example) having a doping concentration higher than that of the base region 14 is selectively provided on the upper surface of the base region 14 .

メイントランジスタ部７０におけるベース領域１４の上面には、第１導電型のソース領域１２が選択的に形成される。本例のソース領域１２はＮ＋型である。本例において、メイントランジスタ部７０のコンタクト領域１５およびソース領域１２は、Ｙ軸方向に沿って交互に半導体基板１０の上面に露出するように設けられる。ただし、コンタクト領域１５およびソース領域１２の配置はこれに限定されない。ソース領域１２が、ゲートトレンチ部４０の直線部分４１に沿って配置されていてもよい。メインダイオード部８０には、ソース領域１２が形成されていない。 A first conductivity type source region 12 is selectively formed on the upper surface of the base region 14 in the main transistor section 70 . The source region 12 in this example is of the N+ type. In this example, the contact regions 15 and the source regions 12 of the main transistor section 70 are alternately provided along the Y-axis direction so as to be exposed to the upper surface of the semiconductor substrate 10 . However, the arrangement of contact regions 15 and source regions 12 is not limited to this. Source region 12 may be arranged along straight portion 41 of gate trench portion 40 . The source region 12 is not formed in the main diode section 80 .

第１ウェル領域１７は、半導体基板１０の上面において、ゲートトレンチ部４０の先端部分４３と重って設けられる。つまり、半導体基板１０の上面と平行な面において、第１ウェル領域１７が設けられた領域内に、ゲートトレンチ部４０の先端部分４３が配置されている。先端部分４３のうち、少なくともＹ軸方向における最端部が、第１ウェル領域１７と重なって配置される。本例の第１ウェル領域１７は、ベース領域１４よりも不純物濃度の高いＰ＋型の領域である。 The first well region 17 is provided on the upper surface of the semiconductor substrate 10 so as to overlap the tip portion 43 of the gate trench portion 40 . That is, on a plane parallel to the upper surface of the semiconductor substrate 10, the tip portion 43 of the gate trench portion 40 is arranged within the region where the first well region 17 is provided. At least the end portion in the Y-axis direction of the tip portion 43 is arranged so as to overlap the first well region 17 . The first well region 17 in this example is a P+ type region having a higher impurity concentration than the base region 14 .

第１ウェル領域１７は、半導体基板１０の上面において、全てのゲートトレンチ部４０および全てのダミートレンチ部３０を囲むように設けられてよい。半導体基板１０の上面において第１ウェル領域１７が囲む領域内に、全てのソース領域１２が配置されてよい。 The first well region 17 may be provided on the upper surface of the semiconductor substrate 10 so as to surround all the gate trench portions 40 and all the dummy trench portions 30 . All the source regions 12 may be arranged within the region surrounded by the first well region 17 on the upper surface of the semiconductor substrate 10 .

本例のセンスダイオード部１２０は、半導体基板１０の上面において、第１ウェル領域１７の外側に設けられている。第１ウェル領域１７の外側とは、半導体基板１０の上面において、第１ウェル領域１７を挟んで、ソース領域１２とは逆側の領域を指してよい。半導体基板１０の上面において第１ウェル領域１７が所定の領域を囲んで設けられている場合、第１ウェル領域１７の外側とは、第１ウェル領域１７が囲んでいない領域を指してもよい。 The sense diode section 120 of this example is provided outside the first well region 17 on the upper surface of the semiconductor substrate 10 . The outside of the first well region 17 may refer to a region on the upper surface of the semiconductor substrate 10 opposite to the source region 12 with the first well region 17 interposed therebetween. When the first well region 17 surrounds a predetermined region on the upper surface of the semiconductor substrate 10 , the outside of the first well region 17 may refer to a region not surrounded by the first well region 17 .

本例のセンスダイオード部１２０は、半導体基板１０の上面に露出する第２導電型（本例ではＰ－型）のアノード領域１２６を有する。アノード領域１２６と、半導体基板１０の内部に形成された第１導電型のドリフト領域とがＰＮ接合を形成する。他の例では、センスダイオード部１２０は、ショットキーダイオードであってもよい。 The sense diode section 120 of this example has a second conductivity type (P− type in this example) anode region 126 exposed on the upper surface of the semiconductor substrate 10 . The anode region 126 and the drift region of the first conductivity type formed inside the semiconductor substrate 10 form a PN junction. In another example, sense diode portion 120 may be a Schottky diode.

半導体基板１０の上面には、アノード領域１２６と接触するセンス用電極１２４が、エミッタ電極５２とは分離して設けられる。センス用電極１２４は、アルミニウム等の導電材料で形成される。センスダイオード部１２０は、半導体基板１０の上面において、アノード領域１２６を囲んで設けられた第２ウェル領域１２２を有してよい。第２ウェル領域１２２は、アノード領域１２６およびベース領域１４のいずれよりも不純物濃度の高い第２導電型（本例ではＰ＋型）である。 A sensing electrode 124 in contact with an anode region 126 is provided on the upper surface of the semiconductor substrate 10 separately from the emitter electrode 52 . The sense electrode 124 is made of a conductive material such as aluminum. The sense diode section 120 may have a second well region 122 surrounding an anode region 126 on the upper surface of the semiconductor substrate 10 . The second well region 122 is of the second conductivity type (P+ type in this example) having a higher impurity concentration than both the anode region 126 and the base region 14 .

図３は、図２におけるＡ－Ａ断面の一例を示す図である。本例のＡ－Ａ断面は、メイン素子部１１０におけるソース領域１２を通過するＸＺ面である。本例の半導体装置１００は、当該断面において、半導体基板１０、絶縁膜２６、エミッタ電極５２およびコレクタ電極５８を有する。コレクタ電極５８は、エミッタ電極５２と同一の材料で形成されてよい。エミッタ電極５２は上面電極の一例であり、コレクタ電極５８は下面電極の一例である。半導体基板１０に形成されたメイントランジスタ部７０およびメインダイオード部８０は、エミッタ電極５２およびコレクタ電極５８に接続されている。 FIG. 3 is a diagram showing an example of the AA cross section in FIG. The AA section of this example is the XZ plane passing through the source region 12 in the main element section 110 . The semiconductor device 100 of this example has a semiconductor substrate 10, an insulating film 26, an emitter electrode 52 and a collector electrode 58 in the cross section. The collector electrode 58 may be made of the same material as the emitter electrode 52 . The emitter electrode 52 is an example of a top electrode, and the collector electrode 58 is an example of a bottom electrode. A main transistor portion 70 and a main diode portion 80 formed on the semiconductor substrate 10 are connected to the emitter electrode 52 and the collector electrode 58 .

絶縁膜２６は、例えばボロンおよびリン等の不純物が添加されたシリケートガラスである。絶縁膜２６は、半導体基板１０の上面２１において選択的に形成される。エミッタ電極５２は、半導体基板１０の上面の上方に設けられる。エミッタ電極５２および半導体基板１０の間には絶縁膜２６が設けられる。エミッタ電極５２は、絶縁膜２６に設けられた貫通孔を介して半導体基板１０と接触する。コレクタ電極５８は、半導体基板１０の下面２３に設けられる。コレクタ電極５８は、半導体基板１０の下面２３と接して設けられてよい。コレクタ電極５８は、半導体基板１０の下面２３全体に設けられてよい。 The insulating film 26 is, for example, silicate glass doped with impurities such as boron and phosphorus. The insulating film 26 is selectively formed on the upper surface 21 of the semiconductor substrate 10 . Emitter electrode 52 is provided above the upper surface of semiconductor substrate 10 . An insulating film 26 is provided between emitter electrode 52 and semiconductor substrate 10 . Emitter electrode 52 contacts semiconductor substrate 10 through a through hole provided in insulating film 26 . A collector electrode 58 is provided on the lower surface 23 of the semiconductor substrate 10 . The collector electrode 58 may be provided in contact with the bottom surface 23 of the semiconductor substrate 10 . The collector electrode 58 may be provided over the entire bottom surface 23 of the semiconductor substrate 10 .

半導体基板１０は、シリコン基板であってよく、炭化シリコン基板であってよく、窒化ガリウム等の窒化物半導体基板等であってもよい。本例の半導体基板１０はシリコン基板である。 The semiconductor substrate 10 may be a silicon substrate, a silicon carbide substrate, a nitride semiconductor substrate such as gallium nitride, or the like. The semiconductor substrate 10 of this example is a silicon substrate.

半導体基板１０の内部には、Ｎ－型のドリフト領域１８が設けられる。当該断面においてドリフト領域１８と半導体基板１０の上面２１との間には、ドリフト領域１８よりも不純物濃度の高いＮ＋型のソース領域１２が設けられる。当該断面においてソース領域１２とドリフト領域１８との間には、Ｐ－型のベース領域１４が設けられる。当該断面におけるドリフト領域１８は、半導体基板１０のうち、ソース領域１２、ベース領域１４、バッファ領域２０、コレクタ領域２２およびカソード領域８２が形成されずに残存した領域である。 An N− type drift region 18 is provided inside the semiconductor substrate 10 . An N + -type source region 12 having a higher impurity concentration than the drift region 18 is provided between the drift region 18 and the upper surface 21 of the semiconductor substrate 10 in the cross section. A P− type base region 14 is provided between the source region 12 and the drift region 18 in the cross section. The drift region 18 in the cross section is a region of the semiconductor substrate 10 where the source region 12, the base region 14, the buffer region 20, the collector region 22 and the cathode region 82 are not formed.

ベース領域１４は、半導体基板１０の上面からボロン等のＰ型の不純物を注入することで形成されてよい。ソース領域１２は、半導体基板１０の上面からリンや砒素等のＮ型の不純物を注入することで形成されてよい。 The base region 14 may be formed by implanting a P-type impurity such as boron from the upper surface of the semiconductor substrate 10 . The source region 12 may be formed by implanting an N-type impurity such as phosphorus or arsenic from the upper surface of the semiconductor substrate 10 .

ゲートトレンチ部４０は、半導体基板１０の上面２１から半導体基板１０の内部まで形成され、側壁においてソース領域１２およびベース領域１４と接している。本例のゲートトレンチ部４０は、半導体基板１０の上面２１から、ソース領域１２およびベース領域１４を貫通して設けられる。 Gate trench portion 40 is formed from upper surface 21 of semiconductor substrate 10 to the inside of semiconductor substrate 10 and is in contact with source region 12 and base region 14 at sidewalls. The gate trench portion 40 of this example is provided from the upper surface 21 of the semiconductor substrate 10 so as to penetrate through the source region 12 and the base region 14 .

ダミートレンチ部３０は、半導体基板１０の上面２１から半導体基板１０の内部まで形成され、側壁においてベース領域１４と接している。ダミートレンチ部３０の側壁のうち、ゲートトレンチ部４０と対向する側壁は、ソース領域１２およびベース領域１４と接していてよい。 The dummy trench portion 30 is formed from the upper surface 21 of the semiconductor substrate 10 to the inside of the semiconductor substrate 10 and is in contact with the base region 14 at the sidewall. Of the sidewalls of dummy trench portion 30 , sidewalls facing gate trench portion 40 may be in contact with source region 12 and base region 14 .

バッファ領域２０は、ドリフト領域１８の下面側に形成される。バッファ領域２０のドーピング濃度は、ドリフト領域１８のドーピング濃度よりも高い。バッファ領域２０は、ベース領域１４の下面側から広がる空乏層が、Ｐ＋型のコレクタ領域２２に到達することを防ぐフィールドストップ層として機能してよい。 Buffer region 20 is formed on the lower surface side of drift region 18 . The doping concentration of buffer region 20 is higher than the doping concentration of drift region 18 . The buffer region 20 may function as a field stop layer that prevents the depletion layer spreading from the lower surface side of the base region 14 from reaching the P + -type collector region 22 .

メイントランジスタ部７０においてバッファ領域２０の下面側には、Ｐ＋型のコレクタ領域２２が形成される。メインダイオード部８０においてバッファ領域２０の下面側には、Ｎ＋型のカソード領域８２が形成される。 A P + -type collector region 22 is formed on the lower surface side of the buffer region 20 in the main transistor section 70 . An N+ type cathode region 82 is formed on the lower surface side of the buffer region 20 in the main diode section 80 .

ゲートトレンチ部４０は、ゲート絶縁膜４２およびゲート導電部４４を有する。ゲート絶縁膜４２は、ゲートトレンチの内壁を覆って形成される。ゲート絶縁膜４２は、ゲートトレンチの内壁の半導体を酸化または窒化して形成してよい。ゲート導電部４４は、ゲートトレンチの内部においてゲート絶縁膜４２に覆われている。つまりゲート絶縁膜４２は、ゲート導電部４４と半導体基板１０とを絶縁する。ゲート導電部４４は、ポリシリコン等の導電材料で形成される。 The gate trench portion 40 has a gate insulating film 42 and a gate conductive portion 44 . A gate insulating film 42 is formed to cover the inner wall of the gate trench. The gate insulating film 42 may be formed by oxidizing or nitriding the semiconductor on the inner wall of the gate trench. The gate conductive portion 44 is covered with the gate insulating film 42 inside the gate trench. That is, the gate insulating film 42 insulates the gate conductive portion 44 and the semiconductor substrate 10 from each other. The gate conductive portion 44 is formed of a conductive material such as polysilicon.

ゲート導電部４４は、深さ方向において、ゲート絶縁膜４２を挟んで、少なくとも隣接するベース領域１４と対向する領域を含む。当該断面におけるゲートトレンチ部４０は、半導体基板１０の上面において絶縁膜２６により覆われる。ゲート導電部４４に所定の電圧が印加されると、ベース領域１４のうちゲートトレンチ部４０に接する界面の表層に電子の反転層によるチャネルが形成される。 The gate conductive portion 44 includes a region facing at least the adjacent base region 14 with the gate insulating film 42 interposed therebetween in the depth direction. The gate trench portion 40 in the cross section is covered with the insulating film 26 on the upper surface of the semiconductor substrate 10 . When a predetermined voltage is applied to the gate conductive portion 44 , a channel is formed by an electron inversion layer in the surface layer of the interface in contact with the gate trench portion 40 in the base region 14 .

本例のダミートレンチ部３０は、ダミー絶縁膜３２およびダミー導電部３４を有する。ダミー絶縁膜３２は、ダミートレンチの内壁を覆って形成される。ダミー導電部３４は、ダミートレンチ部３０の内部に形成され、且つ、ダミー絶縁膜３２により覆われている。ダミー絶縁膜３２は、ダミー導電部３４と半導体基板１０とを絶縁する。ダミー導電部３４は、ゲート導電部４４と同一の材料で形成されてよい。当該断面におけるダミートレンチ部３０は、半導体基板１０の上面において絶縁膜２６により覆われる。 The dummy trench portion 30 of this example has a dummy insulating film 32 and a dummy conductive portion 34 . The dummy insulating film 32 is formed covering the inner wall of the dummy trench. The dummy conductive portion 34 is formed inside the dummy trench portion 30 and covered with the dummy insulating film 32 . The dummy insulating film 32 insulates the dummy conductive portion 34 from the semiconductor substrate 10 . The dummy conductive portion 34 may be made of the same material as the gate conductive portion 44 . The dummy trench portion 30 in the cross section is covered with the insulating film 26 on the upper surface of the semiconductor substrate 10 .

ダミートレンチ部３０を設けることで、キャリアの蓄積効果を高めて伝導度変調を促進し、オン電圧を低下させることができる。また、ゲートトレンチ部４０に対するダミートレンチ部３０の割合を調整することで、半導体装置１００のスイッチング速度を調整することができる。 By providing the dummy trench portion 30, the effect of accumulating carriers can be enhanced, the conductivity modulation can be promoted, and the ON voltage can be lowered. Further, by adjusting the ratio of the dummy trench portion 30 to the gate trench portion 40, the switching speed of the semiconductor device 100 can be adjusted.

図４は、図２におけるＢ－Ｂ断面の一例を示す図である。本例のＢ－Ｂ断面は、センスダイオード部１２０の全体と、メイントランジスタ部７０の一部を横切る、ＹＺ面に平行な断面である。 FIG. 4 is a diagram showing an example of a BB section in FIG. The BB cross section of this example is a cross section parallel to the YZ plane that crosses the entire sense diode section 120 and part of the main transistor section 70 .

エミッタ電極５２は、メイン素子部１１０の上方に配置される。エミッタ電極５２と半導体基板１０との間には、絶縁膜２６が設けられる。絶縁膜２６には貫通孔が形成されており、当該貫通孔を介してエミッタ電極５２と半導体基板１０とが接触する。当該断面において、エミッタ電極５２と、第１ウェル領域１７とが接触する。第１ウェル領域１７においてエミッタ電極５２と接触する領域には、第１ウェル領域１７よりも高濃度のｐ型のオーミック領域１２８が設けられてよい。オーミック領域１２８は、後述する第２ウェル領域１２２にも設けられてよい。 The emitter electrode 52 is arranged above the main element section 110 . An insulating film 26 is provided between the emitter electrode 52 and the semiconductor substrate 10 . A through hole is formed in the insulating film 26, and the emitter electrode 52 and the semiconductor substrate 10 are in contact with each other through the through hole. In the cross section, the emitter electrode 52 and the first well region 17 are in contact with each other. A region in contact with the emitter electrode 52 in the first well region 17 may be provided with a p-type ohmic region 128 having a higher concentration than the first well region 17 . The ohmic region 128 may also be provided in the second well region 122, which will be described later.

図２に示したように、第１ウェル領域１７は、ＸＹ面においてゲートトレンチ部４０の先端部分４３を囲んで設けられる。また、図４に示すようにＹＺ面においても、第１ウェル領域１７は、ゲートトレンチ部４０の先端部分４３を囲んで設けられる。第１ウェル領域１７は、ゲートトレンチ部４０の先端部分４３よりもＺ軸方向において深くまで形成されている。 As shown in FIG. 2, the first well region 17 is provided surrounding the tip portion 43 of the gate trench portion 40 on the XY plane. Further, as shown in FIG. 4, the first well region 17 is provided surrounding the tip portion 43 of the gate trench portion 40 also on the YZ plane. The first well region 17 is formed deeper than the tip portion 43 of the gate trench portion 40 in the Z-axis direction.

第１ウェル領域１７の内側（本例ではＹ軸正側）には、ベース領域１４が形成されている。当該断面において、ベース領域１４の上面には、コンタクト領域１５およびソース領域１２が交互に形成されている。 A base region 14 is formed inside the first well region 17 (on the Y-axis positive side in this example). In the cross section, contact regions 15 and source regions 12 are alternately formed on the upper surface of the base region 14 .

センスダイオード部１２０における半導体基板１０の上面２１には、エミッタ電極５２とは分離したセンス用電極１２４が設けられている。センス用電極１２４は、アルミニウム等の導電材料で形成されている。センス用電極１２４は、半導体基板１０の上面２１と接して設けられてよい。本例のセンス用電極１２４は、センスダイオード部１２０の第２ウェル領域１２２およびアノード領域１２６と電気的に接続されている。アノード領域１２６は、半導体基板１０の上面２１と、ドリフト領域１８との間に設けられている。 A sense electrode 124 separated from the emitter electrode 52 is provided on the upper surface 21 of the semiconductor substrate 10 in the sense diode portion 120 . The sense electrode 124 is made of a conductive material such as aluminum. The sense electrode 124 may be provided in contact with the upper surface 21 of the semiconductor substrate 10 . The sense electrode 124 of this example is electrically connected to the second well region 122 and the anode region 126 of the sense diode section 120 . Anode region 126 is provided between upper surface 21 of semiconductor substrate 10 and drift region 18 .

センスダイオード部１２０においては、半導体基板１０の下面２３に露出するカソード領域８２が設けられている。センスダイオード部１２０におけるカソード領域８２は、メインダイオード部８０におけるカソード領域８２と同一の不純物濃度を有し、同一の深さ位置に設けられてよい。 A cathode region 82 exposed to the lower surface 23 of the semiconductor substrate 10 is provided in the sense diode portion 120 . The cathode region 82 in the sense diode section 120 may have the same impurity concentration as the cathode region 82 in the main diode section 80 and may be provided at the same depth position.

カソード領域８２は、コレクタ電極５８と電気的に接続されている。つまり本例のセンスダイオード部１２０は、メイン素子部１１０と共通のコレクタ電極５８に接続されている。 Cathode region 82 is electrically connected to collector electrode 58 . That is, the sense diode section 120 of this example is connected to the collector electrode 58 common to the main element section 110 .

本例のセンスダイオード部１２０は、コレクタ電極５８におけるコレクタ電圧が、センス用電極１２４に印加されている電圧を超えた場合に逆バイアス状態となる。これにより、メイントランジスタ部７０のコレクタ電圧が、所定の閾値電圧を超えたか否かを検出できる。 The sense diode section 120 of this example is reverse biased when the collector voltage at the collector electrode 58 exceeds the voltage applied to the sense electrode 124 . This makes it possible to detect whether or not the collector voltage of the main transistor section 70 has exceeded a predetermined threshold voltage.

また、センスダイオード部１２０のアノード領域１２６を囲むように、第２ウェル領域１２２を設けることで、メイントランジスタ部７０のコレクタ領域２２等からのホールが、アノード領域１２６に到達するのを抑制できる。これにより、センスダイオード部１２０の耐圧を向上させることができる。第２ウェル領域１２２は、半導体基板１０の上面２１から半導体基板１０の内部まで設けられる。 Further, by providing the second well region 122 so as to surround the anode region 126 of the sense diode section 120 , holes from the collector region 22 and the like of the main transistor section 70 can be suppressed from reaching the anode region 126 . Thereby, the breakdown voltage of the sense diode section 120 can be improved. The second well region 122 is provided from the top surface 21 of the semiconductor substrate 10 to the inside of the semiconductor substrate 10 .

センスダイオード部１２０の耐圧が、メイントランジスタ部７０の耐圧よりもわずかに大きくなるように、第２ウェル領域１２２の不純物濃度および深さＤ２、および幅Ｗ２を設定することが好ましい。これにより、メイントランジスタ部７０よりもセンスダイオード部１２０が先に降伏することを抑制して、比較的に面積の小さいセンスダイオード部１２０に電流が集中することを抑制できる。センスダイオード部１２０内に第２ウェル領域１２２よりも外側に第３、第４のウェル領域を設ければさらに良い。 It is preferable to set the impurity concentration, depth D2 and width W2 of second well region 122 such that the breakdown voltage of sense diode portion 120 is slightly higher than the breakdown voltage of main transistor portion 70 . As a result, it is possible to prevent the sense diode portion 120 from breaking down before the main transistor portion 70, thereby suppressing current concentration in the sense diode portion 120 having a relatively small area. It is even better if third and fourth well regions are provided outside the second well region 122 in the sense diode section 120 .

センスダイオード部１２０およびメイントランジスタ部７０は、同一の半導体基板１０に形成されるので、耐圧はほぼ同一となる。これに対して、第２ウェル領域１２２を設けることで、センスダイオード部１２０の耐圧を向上させることができる。第２ウェル領域１２２と第１ウェル領域１７の距離Ｗ１を離すほど耐圧が向上する。 Since the sense diode section 120 and the main transistor section 70 are formed on the same semiconductor substrate 10, they have substantially the same breakdown voltage. By providing the second well region 122, the breakdown voltage of the sense diode section 120 can be improved. The breakdown voltage is improved as the distance W1 between the second well region 122 and the first well region 17 is increased.

また、第２ウェル領域１２２の深さＤ２は、第１ウェル領域１７の深さＤ１よりも深くてよいし同じでよい。各領域の深さとは、半導体基板１０の上面２１から、各領域の最下端までのＺ軸方向の距離を指す。 Also, the depth D2 of the second well region 122 may be deeper than or equal to the depth D1 of the first well region 17 . The depth of each region refers to the distance in the Z-axis direction from the upper surface 21 of the semiconductor substrate 10 to the lowest end of each region.

第２ウェル領域１２２を深く形成することで、メイン素子部１１０からアノード領域１２６にキャリアが流れることを抑制できる。これにより、メイン素子部１１０の動作が、センスダイオード部１２０の動作に与える影響を低減できる。 By forming the second well region 122 deep, it is possible to suppress the flow of carriers from the main device section 110 to the anode region 126 . As a result, the influence of the operation of the main element section 110 on the operation of the sense diode section 120 can be reduced.

また、第２ウェル領域１２２の不純物濃度は、第１ウェル領域１７の不純物濃度と同一であってよく、低くてよく、高くてもよい。第２ウェル領域１２２の不純物濃度を高くすることで、メイン素子部１１０の動作が、センスダイオード部１２０の動作に与える影響を低減できる。 Also, the impurity concentration of the second well region 122 may be the same as that of the first well region 17, lower, or higher. By increasing the impurity concentration of the second well region 122, the influence of the operation of the main element section 110 on the operation of the sense diode section 120 can be reduced.

また、第２ウェル領域１２２の不純物濃度は、アノード領域１２６の不純物濃度よりも高い。一例として第２ウェル領域１２２の不純物濃度は、１．０×１０^１３／ｃｍ^３以上、１．０×１０^１７／ｃｍ^３以下である。アノード領域の不純物濃度は、１．０×１０^１３／ｃｍ^３以上、１．０×１０^１６／ｃｍ^３以下である。 Also, the impurity concentration of the second well region 122 is higher than that of the anode region 126 . As an example, the impurity concentration of the second well region 122 is 1.0×10 ¹³ /cm ³ or more and 1.0×10 ¹⁷ /cm ³ or less. The impurity concentration of the anode region is 1.0×10 ¹³ /cm ³ or more and 1.0×10 ¹⁶ /cm ³ or less.

図５は、半導体装置１００を含む、出力装置２００の一例を示す図である。本例の出力装置２００は、半導体装置１００－１および半導体装置１００－２、保護回路２１０、ハイサイド駆動回路２２０、ならびに、ローサイド駆動回路２３０を備える。 FIG. 5 is a diagram showing an example of an output device 200 including the semiconductor device 100. As shown in FIG. The output device 200 of this example includes semiconductor devices 100 - 1 and 100 - 2 , a protection circuit 210 , a high side drive circuit 220 and a low side drive circuit 230 .

それぞれの半導体装置１００は、コレクタ端子Ｃ、エミッタ端子Ｅ、ゲート端子Ｇおよびセンス端子Ｖｆを備える。コレクタ端子Ｃはコレクタ電極５８に電気的に接続され、エミッタ端子Ｅはエミッタ電極５２に電気的に接続され、ゲート端子Ｇはゲートトレンチ部４０のゲート導電部４４に電気的に接続され、センス端子Ｖｆはセンス用電極１２４に電気的に接続される。 Each semiconductor device 100 has a collector terminal C, an emitter terminal E, a gate terminal G and a sense terminal Vf. The collector terminal C is electrically connected to the collector electrode 58, the emitter terminal E is electrically connected to the emitter electrode 52, the gate terminal G is electrically connected to the gate conductive portion 44 of the gate trench portion 40, and the sense terminal. Vf is electrically connected to the sense electrode 124 .

半導体装置１００－１のコレクタ端子Ｃには、所定の高電圧ＨＶが印加されている。半導体装置１００－１のエミッタ端子Ｅは、半導体装置１００－２のコレクタ端子Ｃに接続されている。半導体装置１００－２のエミッタ端子Ｅは、所定の基準電圧（本例ではグランド電圧）が印加されている。半導体装置１００－１のエミッタ端子Ｅは負荷に接続される。 A predetermined high voltage HV is applied to the collector terminal C of the semiconductor device 100-1. An emitter terminal E of the semiconductor device 100-1 is connected to a collector terminal C of the semiconductor device 100-2. A predetermined reference voltage (ground voltage in this example) is applied to the emitter terminal E of the semiconductor device 100-2. An emitter terminal E of the semiconductor device 100-1 is connected to a load.

ハイサイド駆動回路２２０は、半導体装置１００－１のゲート端子Ｇと接続されており、半導体装置１００－１を制御する。ローサイド駆動回路２３０は、半導体装置１００－２のゲート端子Ｇと接続されており、半導体装置１００－２を制御する。一例として、半導体装置１００－１および半導体装置１００－２のメイントランジスタ部７０の一方がオン状態に制御され、他方がオフ状態に制御される。これにより、負荷に所定の電圧および電流を供給する。 The high side drive circuit 220 is connected to the gate terminal G of the semiconductor device 100-1 and controls the semiconductor device 100-1. The low-side drive circuit 230 is connected to the gate terminal G of the semiconductor device 100-2 and controls the semiconductor device 100-2. As an example, one of the main transistor sections 70 of the semiconductor devices 100-1 and 100-2 is controlled to be on, and the other is controlled to be off. This supplies the load with a predetermined voltage and current.

保護回路２１０は、通常動作時にセンスダイオード部１２０が順バイアスとなり、コレクタ端子Ｃの電圧が所定値以上となった場合にセンスダイオード部１２０が逆バイアスとなる電圧を、センス端子Ｖｆに印加する。つまり、保護回路２１０は、センスダイオード部１２０の通常動作時におけるコレクタ電圧より大きい電圧を、センス端子Ｖｆに印加する。保護回路２１０は、抵抗２４０を介してセンス端子Ｖｆに接続されてよい。抵抗２４０を設けることで、センスダイオード部１２０に流れる電流を微小にできる。また、保護回路２１０とセンス端子Ｖｆとを接続する経路には、容量２４２が接続されている。 The protection circuit 210 forward biases the sense diode section 120 during normal operation, and applies to the sense terminal Vf a voltage that reverse biases the sense diode section 120 when the voltage at the collector terminal C exceeds a predetermined value. That is, the protection circuit 210 applies a voltage higher than the collector voltage of the sense diode section 120 during normal operation to the sense terminal Vf. Protection circuit 210 may be connected to sense terminal Vf through resistor 240 . By providing the resistor 240, the current flowing through the sense diode section 120 can be minimized. A capacitor 242 is connected to a path connecting the protection circuit 210 and the sense terminal Vf.

図６は、いずれかの半導体装置１００の動作例を示す図である。通常動作時においては、センスダイオード部１２０が順バイアスされており、保護回路２１０からセンスダイオード部１２０に微小な電流が流れる。当該電流は、例えば数ｍＡ程度であり、半導体装置１００のコレクタ電流に比べて無視できる程度に小さい。このため、センスダイオード部１２０における損失は非常に小さくなる。 FIG. 6 is a diagram showing an operation example of one of the semiconductor devices 100. FIG. During normal operation, the sense diode section 120 is forward biased, and a minute current flows from the protection circuit 210 to the sense diode section 120 . The current is, for example, about several mA, which is so small that it can be ignored compared to the collector current of the semiconductor device 100 . Therefore, the loss in the sense diode section 120 is extremely small.

誤信号等により半導体装置１００－１および半導体装置１００－２の双方においてメイントランジスタ部７０がオンになる短絡状態になると、それぞれのメイントランジスタ部７０には大きなコレクタ電流が流れる。大きなコレクタ電流が流れると、それぞれのメイントランジスタ部７０のコレクタ電圧が上昇する。 When the main transistor section 70 is turned on in both the semiconductor devices 100-1 and 100-2 due to an erroneous signal or the like, a large collector current flows through each of the main transistor sections 70. FIG. When a large collector current flows, the collector voltage of each main transistor section 70 rises.

コレクタ電圧が所定電圧以上になると、センスダイオード部１２０が逆バイアス状態となり、センスダイオード部１２０には電流が流れなくなる。このため、保護回路２１０が出力する電流は容量２４２に流れ始め、容量２４２が充電される。これにより、センス端子Ｖｆの電圧が、通常動作時の電圧よりも上昇する。 When the collector voltage becomes equal to or higher than a predetermined voltage, the sense diode section 120 is reverse-biased, and no current flows through the sense diode section 120 . Therefore, the current output from the protection circuit 210 begins to flow into the capacitor 242, and the capacitor 242 is charged. As a result, the voltage of the sense terminal Vf rises above the voltage during normal operation.

保護回路２１０は、いずれかのセンス端子Ｖｆにおける電圧が、それぞれのセンス端子Ｖｆに対して定められた所定の閾値電圧Ｖｔｈを超えた場合に、対応する半導体装置１００のメイントランジスタ部７０をオフ状態に制御する。本例の保護回路２１０は、ハイサイド駆動回路２２０およびローサイド駆動回路２３０に、メイントランジスタ部７０をオフ状態に制御させるための信号を出力する。当該信号に応じて、ゲート端子Ｇの電圧が降下して、メイントランジスタ部７０がオフ状態となる。このため過電流を遮断して半導体装置１００を保護できる。 The protection circuit 210 turns off the main transistor section 70 of the corresponding semiconductor device 100 when the voltage at any of the sense terminals Vf exceeds a predetermined threshold voltage Vth determined for each sense terminal Vf. to control. The protection circuit 210 of this example outputs to the high side drive circuit 220 and the low side drive circuit 230 a signal for controlling the main transistor section 70 to be turned off. In response to this signal, the voltage of the gate terminal G drops and the main transistor section 70 is turned off. Therefore, the semiconductor device 100 can be protected by blocking the overcurrent.

図７は、半導体装置１００の他の例を示す上面図である。本例の半導体装置１００は、図１から図６において説明した半導体装置１００の構成に加えて、素子分離部１３０を更に備える。他の構成は、図１から図６において説明したいずれかの態様の半導体装置１００と同一である。 FIG. 7 is a top view showing another example of the semiconductor device 100. FIG. The semiconductor device 100 of this example further includes an element isolation portion 130 in addition to the configuration of the semiconductor device 100 described with reference to FIGS. Other configurations are the same as those of the semiconductor device 100 of any aspect described in FIGS.

素子分離部１３０は、半導体基板１０の上面において、メイン素子部１１０と、センスダイオード部１２０との間に設けられ、メイン素子部１１０とセンスダイオード部１２０との間におけるキャリアの移動を抑制する。図７の例では、半導体基板１０の上面において素子分離部１３０がセンスダイオード部１２０を囲んで設けられているが、素子分離部１３０は、センスダイオード部１２０を囲まなくともよい。素子分離部１３０は、半導体基板１０の上面において、メイン素子部１１０とセンスダイオード部１２０との間に、Ｘ軸方向に延びる直線状に設けられてもよい。この場合、素子分離部１３０のＸ軸方向の長さは、センスダイオード部１２０のＸ軸方向の長さより長いことが好ましい。 The element isolation portion 130 is provided between the main element portion 110 and the sense diode portion 120 on the upper surface of the semiconductor substrate 10 and suppresses movement of carriers between the main element portion 110 and the sense diode portion 120 . In the example of FIG. 7 , the element isolation portion 130 is provided to surround the sense diode portion 120 on the upper surface of the semiconductor substrate 10 , but the element isolation portion 130 does not have to surround the sense diode portion 120 . The element isolation portion 130 may be provided in a straight line extending in the X-axis direction between the main element portion 110 and the sense diode portion 120 on the upper surface of the semiconductor substrate 10 . In this case, the length of the element isolation portion 130 in the X-axis direction is preferably longer than the length of the sense diode portion 120 in the X-axis direction.

図８は、図７に示した半導体装置１００におけるＹＺ断面の一例を示す図である。図８におけるＹＺ断面は、メイントランジスタ部７０の一部、素子分離部１３０、センスダイオード部１２０および耐圧構造部１１２を横切る断面である。 FIG. 8 is a diagram showing an example of the YZ section of the semiconductor device 100 shown in FIG. The YZ cross section in FIG. 8 is a cross section crossing a part of the main transistor section 70, the element isolation section 130, the sense diode section 120 and the breakdown voltage structure section 112. In FIG.

本例の素子分離部１３０は、第１ウェル領域１７と、第２ウェル領域１２２との間に設けられる。本例の素子分離部１３０は、１つ以上のガードリング１３２を有する。ガードリング１３２は、半導体基板１０の上面２１から半導体基板１０の内部まで設けられる。なお、素子分離部１３０が半導体基板１０の上面において直線状に形成される場合、ガードリング１３２はリング状に形成されない。 The element isolation part 130 of this example is provided between the first well region 17 and the second well region 122 . The element isolation portion 130 of this example has one or more guard rings 132 . Guard ring 132 is provided from upper surface 21 of semiconductor substrate 10 to the inside of semiconductor substrate 10 . In addition, when the element isolation part 130 is formed linearly on the upper surface of the semiconductor substrate 10, the guard ring 132 is not formed in a ring shape.

ガードリング１３２は、メイン素子部１１０と、センスダイオード部１２０との間のキャリアの移動を抑制する。ガードリング１３２は、Ｐ型の領域であってよい。また、ガードリング１３２は、絶縁材料が充填されたトレンチであってもよい。ガードリング１３２は、第２ウェル領域１２２よりも深くまで形成されてよい。 The guard ring 132 suppresses movement of carriers between the main element section 110 and the sense diode section 120 . Guard ring 132 may be a P-type region. Guard ring 132 may also be a trench filled with an insulating material. Guard ring 132 may be formed deeper than second well region 122 .

本例の耐圧構造部１１２は、１つ以上のガードリング１４２と、１つ以上のフィールドプレート１４０とを有する。ガードリング１４２は、半導体基板１０の上面２１から半導体基板１０の内部まで設けられた、Ｐ型の領域である。フィールドプレート１４０は、半導体基板１０の上面２１に設けられ、ガードリング１４２の上端と接続される。フィールドプレート１４０は、導電材料で形成されている。また、半導体基板１０の上面２１には、ガードリング１３２の上端と接続され、導電材料で形成されたフィールドプレート１３４が設けられてもよい。 The breakdown voltage structure 112 of this example has one or more guard rings 142 and one or more field plates 140 . Guard ring 142 is a P-type region provided from upper surface 21 of semiconductor substrate 10 to the inside of semiconductor substrate 10 . Field plate 140 is provided on upper surface 21 of semiconductor substrate 10 and connected to the upper end of guard ring 142 . Field plate 140 is formed of a conductive material. A field plate 134 formed of a conductive material and connected to the upper end of the guard ring 132 may be provided on the upper surface 21 of the semiconductor substrate 10 .

素子分離部１３０のガードリング１３２が形成されている深さＤ３は、耐圧構造部１１２のガードリング１４２が形成されている深さＤ４と同一であってよく、深くてもよい。ガードリング１３２を深く形成することで、メイン素子部１１０と、センスダイオード部１２０とをより分離できる。ただし、センスダイオード部１２０の耐圧がメイントランジスタ部７０の耐圧と同等でよいならばＤ３はＤ４より浅くても構わない。 The depth D3 in which the guard ring 132 of the element isolation portion 130 is formed may be the same as or deeper than the depth D4 in which the guard ring 142 of the breakdown voltage structure portion 112 is formed. By forming the guard ring 132 deeply, the main element section 110 and the sense diode section 120 can be further separated. However, if the breakdown voltage of the sense diode section 120 is equivalent to that of the main transistor section 70, D3 may be shallower than D4.

また、素子分離部１３０のガードリング１３２の個数は、耐圧構造部１１２のガードリング１４２の個数より少なくてよい。素子分離部１３０においては、空乏層をＹ軸方向に伸ばさなくともよいので、Ｙ軸方向に配列されるガードリング１３２の個数は少なくてもよい。ガードリング１３２の個数を少なくすることで、半導体装置１００を小型化できる。 Also, the number of guard rings 132 in the element isolation section 130 may be less than the number of guard rings 142 in the breakdown voltage structure section 112 . Since the depletion layer does not need to extend in the Y-axis direction in the element isolation section 130, the number of guard rings 132 arranged in the Y-axis direction may be small. By reducing the number of guard rings 132, the semiconductor device 100 can be miniaturized.

図９は、センスダイオード部１２０の他の例を示す断面図である。本例のセンスダイオード部１２０においては、半導体基板１０の上面２１において、アノード領域１２６と第２ウェル領域１２２との間の少なくとも一部の領域に、Ｎ型の領域１２９が設けられている。つまり、半導体基板１０の上面２１におけるアノード領域１２６の面積は、第２ウェル領域１２２が囲む面積よりも小さい。アノード領域１２６を小さくすることで、センスダイオード部１２０の動作を高速化できる。 FIG. 9 is a cross-sectional view showing another example of the sense diode section 120. As shown in FIG. In the sense diode section 120 of this example, an N-type region 129 is provided in at least a portion of the upper surface 21 of the semiconductor substrate 10 between the anode region 126 and the second well region 122 . That is, the area of the anode region 126 on the upper surface 21 of the semiconductor substrate 10 is smaller than the area surrounded by the second well region 122 . By making the anode region 126 smaller, the operation speed of the sense diode section 120 can be increased.

領域１２９は、半導体基板１０の上面２１において、アノード領域１２６を囲むように設けられてよい。領域１２９は、ドリフト領域１８と同一の不純物濃度を有してよい。また、半導体基板１０の上面２１には、領域１２９とセンス用電極１２４とを絶縁する絶縁膜２６が設けられる。Ｙ軸方向におけるアノード領域１２６の幅は、第２ウェル領域１２２の間隔の半分以下であってよい。 Region 129 may be provided on upper surface 21 of semiconductor substrate 10 so as to surround anode region 126 . Region 129 may have the same impurity concentration as drift region 18 . An insulating film 26 for insulating the region 129 and the sense electrode 124 is provided on the upper surface 21 of the semiconductor substrate 10 . The width of the anode regions 126 in the Y-axis direction may be less than half the spacing of the second well regions 122 .

図１０は、センスダイオード部１２０の他の例を示す断面図である。本例のセンスダイオード部１２０は、Ｐ型のアノード領域１２６を有さない。半導体基板１０の上面２１において第２ウェル領域１２２が囲む領域には、ドリフト領域１８が露出している。センス用電極１２４は、ドリフト領域１８とショットキー接触する。つまり、センスダイオード部１２０は、ショットキーダイオードとして機能する。 FIG. 10 is a cross-sectional view showing another example of the sense diode section 120. As shown in FIG. The sense diode section 120 of this example does not have the P-type anode region 126 . The drift region 18 is exposed in a region surrounded by the second well region 122 on the upper surface 21 of the semiconductor substrate 10 . Sense electrode 124 makes Schottky contact with drift region 18 . That is, the sense diode section 120 functions as a Schottky diode.

図１１は、半導体装置１００の他の例を示す上面図である。図１１においては、パッド１１４を省略している。図１に示した半導体装置１００においては、半導体基板１０の上面においてセンスダイオード部１２０が耐圧構造部１１２の内側に配置されていたが、本例においては、半導体基板１０の上面においてセンスダイオード部１２０が耐圧構造部１１２の外側に配置されている。なお、耐圧構造部１１２の内側とは、耐圧構造部１１２が囲む領域を指し、耐圧構造部１１２の外側とは、耐圧構造部１１２が囲んでいない領域を指す。耐圧構造部１１２の外側とは、耐圧構造部１１２を挟んで、メイン素子部１１０が設けられた領域とは逆側の領域を指してもよい。 FIG. 11 is a top view showing another example of the semiconductor device 100. FIG. In FIG. 11, the pads 114 are omitted. In the semiconductor device 100 shown in FIG. 1, the sense diode portion 120 is arranged inside the breakdown voltage structure portion 112 on the upper surface of the semiconductor substrate 10, but in this example, the sense diode portion 120 is arranged on the upper surface of the semiconductor substrate 10. are arranged outside the withstand voltage structure 112 . The inside of the withstanding voltage structure 112 refers to the region surrounded by the withstanding voltage structure 112 , and the outside of the withstanding voltage structure 112 refers to the region not surrounded by the withstanding voltage structure 112 . The outside of the withstanding voltage structure portion 112 may refer to a region opposite to the area where the main element portion 110 is provided with the withstanding voltage structure portion 112 interposed therebetween.

センスダイオード部１２０は、半導体基板１０の上面において、半導体基板１０の角部１２７に設けられてよい。耐圧構造部１１２と、半導体基板１０の端部との間には、メイン素子部１１０等が設けられていない領域が存在する。センスダイオード部１２０を耐圧構造部１１２の外側に配置することで、メイン素子部１１０の面積を小さくせずに、センスダイオード部１２０を設けることができる。 The sense diode portion 120 may be provided at a corner portion 127 of the semiconductor substrate 10 on the upper surface of the semiconductor substrate 10 . Between the breakdown voltage structure portion 112 and the edge portion of the semiconductor substrate 10, there is a region in which the main element portion 110 and the like are not provided. By disposing the sense diode portion 120 outside the breakdown voltage structure portion 112 , the sense diode portion 120 can be provided without reducing the area of the main element portion 110 .

特に、耐圧構造部１１２は、半導体基板１０の角部１２７において曲線状に形成されるので、半導体基板１０の角部１２７においては、耐圧構造部１１２と半導体基板１０の端部との間の領域が大きくなる。このため、センスダイオード部１２０を角部１２７に配置することで、センスダイオード部１２０を容易に半導体基板１０に配置できる。 In particular, since the breakdown voltage structure portion 112 is formed in a curved shape at the corner portion 127 of the semiconductor substrate 10 , the region between the breakdown voltage structure portion 112 and the end portion of the semiconductor substrate 10 is becomes larger. Therefore, by arranging the sense diode portion 120 at the corner portion 127 , the sense diode portion 120 can be easily arranged on the semiconductor substrate 10 .

図１２は、半導体装置１００の他の例を示す上面図である。図１２においては、パッド１１４を省略している。本例の半導体装置１００は、図１１に示した半導体装置１００に対して、素子分離部１３０を更に備える。素子分離部１３０は、耐圧構造部１１２と、センスダイオード部１２０との間に設けられる。素子分離部１３０は、半導体基板１０の上面において、センスダイオード部１２０を囲んで設けられてよい。 FIG. 12 is a top view showing another example of the semiconductor device 100. FIG. In FIG. 12, the pads 114 are omitted. The semiconductor device 100 of this example further includes an isolation portion 130 in contrast to the semiconductor device 100 shown in FIG. The element isolation portion 130 is provided between the breakdown voltage structure portion 112 and the sense diode portion 120 . The element isolation portion 130 may be provided on the upper surface of the semiconductor substrate 10 so as to surround the sense diode portion 120 .

図１３は、半導体装置１００の他の例を示す上面図である。図１３においては、パッド１１４を省略している。本例の半導体装置１００は、半導体基板１０の上面において互いに分離した複数のセンスダイオード部１２０を備える。それぞれのセンスダイオード部１２０は、半導体基板１０のそれぞれの角部１２７に配置されてよい。また、それぞれのセンスダイオード部１２０に対して、素子分離部１３０を更に設けてもよい。 FIG. 13 is a top view showing another example of the semiconductor device 100. FIG. In FIG. 13, the pads 114 are omitted. The semiconductor device 100 of this example includes a plurality of sense diode portions 120 separated from each other on the upper surface of the semiconductor substrate 10 . Each sense diode portion 120 may be located at each corner 127 of the semiconductor substrate 10 . Also, an element isolation portion 130 may be further provided for each sense diode portion 120 .

それぞれのセンスダイオード部１２０のセンス用電極１２４は、電気的に接続されていてよい。つまり、それぞれのセンスダイオード部１２０は、互いに並列に接続されてよい。センスダイオード部１２０を複数設けても、センスダイオード部１２０に流れる電流は非常に微小なので、損失はそれほど増大しない。複数のセンスダイオード部１２０を設けることで、センスダイオード部１２０の特性のバラツキの影響を低減して、メイン素子部１１０における過電流を精度よく検出できる。 The sense electrodes 124 of each sense diode section 120 may be electrically connected. That is, each sense diode section 120 may be connected in parallel with each other. Even if a plurality of sense diode units 120 are provided, the current flowing through the sense diode units 120 is very small, so the loss does not increase so much. By providing a plurality of sense diode units 120, the influence of variations in the characteristics of the sense diode units 120 can be reduced, and overcurrent in the main element unit 110 can be detected with high accuracy.

また、それぞれのセンスダイオード部１２０のセンス用電極１２４は、互いに電気的に分離していてもよい。この場合、いずれの１つ以上のセンスダイオード部１２０を保護回路２１０に接続するかを、半導体装置１００の実装時等において選択できる。例えば、応答速度等の特性が異なる複数のセンスダイオード部１２０を設けておくことで、半導体装置１００の実装時等において、いずれかの特性のセンスダイオード部１２０を選択して保護回路２１０に接続することができる。 Also, the sense electrodes 124 of the respective sense diode portions 120 may be electrically separated from each other. In this case, which one or more sense diode units 120 are to be connected to the protection circuit 210 can be selected when the semiconductor device 100 is mounted. For example, by providing a plurality of sense diode units 120 having different characteristics such as response speed, when mounting the semiconductor device 100 or the like, the sense diode unit 120 having one of the characteristics is selected and connected to the protection circuit 210. be able to.

また、センスダイオード部１２０を耐圧構造部１１２の外側に配置した場合、半導体基板１０を半導体ウエハから切り出すときに、センスダイオード部１２０の一部の領域が欠けてしまうことも考えられる。センスダイオード部１２０を分離して配置することで、一部のセンスダイオード部１２０が機能しない場合であっても、他のセンスダイオード部１２０が機能するので、過電流を検出することができる。 Further, when the sense diode portion 120 is arranged outside the withstand voltage structure portion 112, a part of the sense diode portion 120 may be chipped when the semiconductor substrate 10 is cut out from the semiconductor wafer. By disposing the sense diode units 120 separately, even if some of the sense diode units 120 do not function, the other sense diode units 120 function, so overcurrent can be detected.

以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、特許請求の範囲の記載から明らかである。 Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the description of the scope of claims that forms with such modifications or improvements can also be included in the technical scope of the present invention.

１０・・・半導体基板、１２・・・ソース領域、１４・・・ベース領域、１５・・・コンタクト領域、１７・・・第１ウェル領域、１８・・・ドリフト領域、２０・・・バッファ領域、２１・・・上面、２２・・・コレクタ領域、２３・・・下面、２６・・・絶縁膜、３０・・・ダミートレンチ部、３２・・・ダミー絶縁膜、３４・・・ダミー導電部、４０・・・ゲートトレンチ部、４１・・・直線部分、４２・・・ゲート絶縁膜、４３・・・先端部分、４４・・・ゲート導電部、５１・・・ゲート配線部、５２・・・エミッタ電極、５４・・・コンタクトホール、５６・・・コンタクトホール、５７・・・接続部、５８・・・コレクタ電極、７０・・・メイントランジスタ部、８０・・・メインダイオード部、８２・・・カソード領域、１００・・・半導体装置、１１０・・・メイン素子部、１１２・・・耐圧構造部、１１４・・・パッド、１２０・・・センスダイオード部、１２２・・・第２ウェル領域、１２４・・・センス用電極、１２６・・・アノード領域、１２７・・・角部、１２８・・・オーミック領域、１２９・・・領域、１３０・・・素子分離部、１３２・・・ガードリング、１３４・・・フィールドプレート、１４０・・・フィールドプレート、１４２・・・ガードリング、２００・・・出力装置、２１０・・・保護回路、２２０・・・ハイサイド駆動回路、２３０・・・ローサイド駆動回路、２４０・・・抵抗、２４２・・・容量 REFERENCE SIGNS LIST 10 semiconductor substrate 12 source region 14 base region 15 contact region 17 first well region 18 drift region 20 buffer region , 21... upper surface, 22... collector region, 23... lower surface, 26... insulating film, 30... dummy trench portion, 32... dummy insulating film, 34... dummy conductive portion , 40... gate trench portion, 41... straight portion, 42... gate insulating film, 43... tip portion, 44... gate conductive portion, 51... gate wiring portion, 52... Emitter electrode 54 Contact hole 56 Contact hole 57 Connection portion 58 Collector electrode 70 Main transistor portion 80 Main diode portion 82. Cathode region 100 Semiconductor device 110 Main element portion 112 Withstanding voltage structure portion 114 Pad 120 Sense diode portion 122 Second well region , 124... electrode for sense, 126... anode region, 127... corner, 128... ohmic region, 129... region, 130... element isolation portion, 132... guard ring , 134... Field plate, 140... Field plate, 142... Guard ring, 200... Output device, 210... Protection circuit, 220... High side drive circuit, 230... Low side Drive circuit, 240... resistance, 242... capacity

Claims

A semiconductor device comprising a semiconductor substrate,
a top electrode provided on the top surface of the semiconductor substrate;
a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode;
a lower surface electrode provided on the lower surface of the semiconductor substrate;
a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a sense diode portion provided on the semiconductor substrate and connected to the sense electrode and the lower surface electrode,
The sense diode section
a drift region of a first conductivity type provided inside the semiconductor substrate;
a second conductivity type anode region provided between the drift region and an upper surface of the semiconductor substrate;
a cathode region of a first conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
The main transistor section is
the drift region provided inside the semiconductor substrate;
a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type source region selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region;
a contact region of a second conductivity type selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the base region;
a gate trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate;
a dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
a collector region of a second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and is deeper than the base region. a first well region of a second conductivity type with a high impurity concentration;
The sense diode section is provided outside the first well region,
the first well region is provided so as to surround all the gate trench portions and all the dummy trench portions provided in the semiconductor substrate ;
The sense diode portion is provided to surround a predetermined region on the upper surface of the semiconductor substrate, and has a higher impurity concentration than the base region provided from the upper surface of the semiconductor substrate to the inside of the semiconductor substrate. having a second well region;
The second well region has a higher impurity concentration than the first well region.
semiconductor equipment.

A semiconductor device comprising a semiconductor substrate,
a top electrode provided on the top surface of the semiconductor substrate;
a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode;
a lower surface electrode provided on the lower surface of the semiconductor substrate;
a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a sense diode portion provided on the semiconductor substrate and connected to the sense electrode and the lower surface electrode;
with
The sense diode section
a drift region of a first conductivity type provided inside the semiconductor substrate;
a second conductivity type anode region provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type cathode region provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
has
The main transistor section is
the drift region provided inside the semiconductor substrate;
a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type source region selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region;
a contact region of a second conductivity type selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the base region;
a gate trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate;
a dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
a collector region of a second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and is deeper than the base region. a second conductivity type first well region having a high impurity concentration;
has
The sense diode section is provided outside the first well region,
the first well region is provided so as to surround all the gate trench portions and all the dummy trench portions provided in the semiconductor substrate;
The sense diode portion is provided to surround a predetermined region on the upper surface of the semiconductor substrate, and has a higher impurity concentration than the base region provided from the upper surface of the semiconductor substrate to the inside of the semiconductor substrate. having a second well region;
The semiconductor device , wherein the second well region is provided deeper than the first well region .

A semiconductor device comprising a semiconductor substrate,
a top electrode provided on the top surface of the semiconductor substrate;
a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode;
a lower surface electrode provided on the lower surface of the semiconductor substrate;
a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a sense diode portion provided on the semiconductor substrate and connected to the sense electrode and the lower surface electrode;
with
The sense diode section
a drift region of a first conductivity type provided inside the semiconductor substrate;
a second conductivity type anode region provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type cathode region provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
has
The main transistor section is
the drift region provided inside the semiconductor substrate;
a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type source region selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region;
a contact region of a second conductivity type selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the base region;
a gate trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate;
a dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
a collector region of a second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and is deeper than the base region. a second conductivity type first well region having a high impurity concentration;
has
The sense diode section is provided outside the first well region,
the first well region is provided so as to surround all the gate trench portions and all the dummy trench portions provided in the semiconductor substrate;
The gate trench portion is not provided in the sense diode portion
semiconductor device.

A semiconductor device comprising a semiconductor substrate,
a top electrode provided on the top surface of the semiconductor substrate;
a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode;
a lower surface electrode provided on the lower surface of the semiconductor substrate;
a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a sense diode portion provided on the semiconductor substrate and connected to the sense electrode and the lower surface electrode;
with
The sense diode section
a drift region of a first conductivity type provided inside the semiconductor substrate;
a second conductivity type anode region provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type cathode region provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
has
The main transistor section is
the drift region provided inside the semiconductor substrate;
a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type source region selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region;
a contact region of a second conductivity type selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the base region;
a gate trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate;
a dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
a collector region of a second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and is deeper than the base region. a second conductivity type first well region having a high impurity concentration;
has
The sense diode section is provided outside the first well region,
the first well region is provided so as to surround all the gate trench portions and all the dummy trench portions provided in the semiconductor substrate;
The source region is not provided in the sense diode section
semiconductor device.

A semiconductor device comprising a semiconductor substrate,
a top electrode provided on the top surface of the semiconductor substrate;
a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode;
a lower surface electrode provided on the lower surface of the semiconductor substrate;
a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a sense diode portion provided on the semiconductor substrate and connected to the sense electrode and the lower surface electrode;
with
The sense diode section
a drift region of a first conductivity type provided inside the semiconductor substrate;
a second conductivity type anode region provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type cathode region provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
has
The main transistor section is
the drift region provided inside the semiconductor substrate;
a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type source region selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region;
a contact region of a second conductivity type selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the base region;
a gate trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate;
a dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
a collector region of a second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and is deeper than the base region. a second conductivity type first well region having a high impurity concentration;
has
The sense diode section is provided outside the first well region,
the first well region is provided so as to surround all the gate trench portions and all the dummy trench portions provided in the semiconductor substrate;
The contact region is not provided in the sense diode section
semiconductor device.

A semiconductor device comprising a semiconductor substrate,
a top electrode provided on the top surface of the semiconductor substrate;
a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode;
a lower surface electrode provided on the lower surface of the semiconductor substrate;
a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a sense diode portion provided on the semiconductor substrate and connected to the sense electrode and the lower surface electrode;
with
The sense diode section
a drift region of a first conductivity type provided inside the semiconductor substrate;
a second conductivity type anode region provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type cathode region provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
has
The main transistor section is
the drift region provided inside the semiconductor substrate;
a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type source region selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region;
a contact region of a second conductivity type selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the base region;
a gate trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate;
a dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
a collector region of a second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and is deeper than the base region. a second conductivity type first well region having a high impurity concentration;
has
The sense diode section is provided outside the first well region,
the first well region is provided so as to surround all the gate trench portions and all the dummy trench portions provided in the semiconductor substrate;
The sense diode section is not provided with the collector region.
semiconductor device.

A semiconductor device comprising a semiconductor substrate,
a top electrode provided on the top surface of the semiconductor substrate;
a sense electrode provided on the upper surface of the semiconductor substrate and separated from the upper surface electrode;
a lower surface electrode provided on the lower surface of the semiconductor substrate;
a main transistor section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a main diode section provided on the semiconductor substrate and connected to the upper surface electrode and the lower surface electrode;
a sense diode portion provided on the semiconductor substrate and connected to the sense electrode and the lower surface electrode;
with
The sense diode section
a drift region of a first conductivity type provided inside the semiconductor substrate;
a second conductivity type anode region provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type cathode region provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
has
The main transistor section is
the drift region provided inside the semiconductor substrate;
a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate;
a first conductivity type source region selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the drift region;
a contact region of a second conductivity type selectively provided between the base region and an upper surface of the semiconductor substrate and having an impurity concentration higher than that of the base region;
a gate trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along a predetermined extending direction on the upper surface of the semiconductor substrate;
a dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
a collector region of a second conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode;
provided on the upper surface of the semiconductor substrate so as to overlap with the tip portion of the gate trench portion in the extending direction, is provided deeper than the tip portion of the gate trench portion from the upper surface of the semiconductor substrate, and is deeper than the base region. a second conductivity type first well region having a high impurity concentration;
has
The sense diode section is provided outside the first well region,
the first well region is provided so as to surround all the gate trench portions and all the dummy trench portions provided in the semiconductor substrate;
The sense diode portion is provided to surround a predetermined region on the upper surface of the semiconductor substrate, and has a higher impurity concentration than the base region provided from the upper surface of the semiconductor substrate to the inside of the semiconductor substrate. having a second well region;
the sense diode portion is provided in a region surrounded by the second well region on the upper surface of the semiconductor substrate;
A region of the first conductivity type having the same impurity concentration as that of the drift region is provided in at least a part of the upper surface of the semiconductor substrate between the anode region and the second well region.
semiconductor device.

The main diode section is
the drift region provided inside the semiconductor substrate;
the base region provided between the drift region and an upper surface of the semiconductor substrate;
the dummy trench portion provided from the upper surface of the semiconductor substrate to reach the drift region and extending along the extending direction on the upper surface of the semiconductor substrate;
The semiconductor device according to any one of claims 1 to 7 , further comprising a cathode region of the first conductivity type provided between the lower surface of the semiconductor substrate and the drift region and connected to the lower surface electrode.

The sense diode portion is provided to surround a predetermined region on the upper surface of the semiconductor substrate, and has a higher impurity concentration than the base region provided from the upper surface of the semiconductor substrate to the inside of the semiconductor substrate. 9. The semiconductor device according to claim 3, further comprising a second well region.

The sense diode section
10. The semiconductor device according to claim 1, provided in a region surrounded by said second well region on the upper surface of said semiconductor substrate.

11. The semiconductor device according to claim 10 , wherein a region of the first conductivity type is provided in at least a part of the upper surface of the semiconductor substrate between the anode region and the second well region.

The main transistor portion and the main transistor portion are provided between the first well region and the second well region on the upper surface of the semiconductor substrate, and are provided from the upper surface of the semiconductor substrate to the inside of the semiconductor substrate. 12. The semiconductor device according to any one of claims 1, 2, or 9 to 11, further comprising an element isolation section that suppresses movement of carriers from the diode section to the sense diode section.

further comprising a breakdown voltage structure provided on the upper surface of the semiconductor substrate to surround the main transistor and the main diode;
13. The semiconductor device according to claim 1, wherein the sense diode section is arranged outside the breakdown voltage structure section on the upper surface of the semiconductor substrate.

14. The semiconductor device according to claim 13 , wherein the sense diode section is arranged at a corner of the semiconductor substrate on the upper surface of the semiconductor substrate.

further comprising a breakdown voltage structure provided on the upper surface of the semiconductor substrate to surround the main transistor and the main diode;
13. The semiconductor device according to claim 1, wherein the sense diode section is arranged inside the breakdown voltage structure section on the upper surface of the semiconductor substrate.

16. The semiconductor device according to any one of claims 1 to 15 , wherein a plurality of said sense diode portions are separately provided on the upper surface of said semiconductor substrate.