JP7232699B2 - Evaporation mask - Google Patents

Description

The present invention relates to a vapor deposition mask in which a mask body having a vapor deposition pattern is supported by a frame. The vapor deposition mask according to the present invention is suitably used, for example, when forming a light-emitting layer of an organic EL element.

An organic EL display in which a light-emitting layer (vapor deposition layer) of an organic EL element is formed on a substrate (vapor deposition object) is manufactured by a vapor deposition mask method. It is disclosed in Patent Document 1. As shown in FIG. 9, the vapor deposition mask 101 of Patent Document 1 includes a plurality of mask bodies 102 arranged in a matrix, a reinforcing frame body 103 arranged so as to surround each mask body 102, and both 102 · It is composed of a metal layer 104 that joins 103 inseparably and integrally. Each mask body 102 has a vapor deposition pattern consisting of a large number of independent vapor deposition through holes 105 . The mask main body 102, the frame 103, and the metal layer 104 are all made of magnetic metal. When manufacturing an organic EL display, the substrate 108 is first placed on the demagnetized magnetic chuck 107 , the vapor deposition mask 101 is then placed on the substrate 108 , and the magnetic chuck 107 is magnetized. As a result, the substrate 108 and the vapor deposition mask 101 are immovably fixed on the magnetic chuck 107, and the vapor deposition process is performed in this state, whereby a vapor deposition layer corresponding to the vapor deposition through holes 105 of the mask main body 102 is formed on the substrate 108. It is formed. Relief recesses 109 are formed in the frame body 103 and the lower side of the metal layer 104 near the frame body, and when the deposition mask 101 is fixed, the deposition mask 101 and the substrate 108 come into contact with each other and the substrate surface is damaged. prevent this from happening.

JP 2017-210633 A

Since the frame 103 arranged to surround the mask body 102 is for reinforcement, its thickness is set sufficiently thicker than that of the mask body 102 . For example, the mask body 102 has a thickness of about 8 μm, while the frame 103 has a thickness of about 1 mm. Also, the metal layer 104 is formed up to the vicinity of the vapor deposition through hole 105 . For example, while the distance W4 of the metal layer 104 extending inward from the frame 103 is about 1.2 mm, the distance W5 from the edge of the metal layer 104 to the formation region 106 of the vapor deposition through hole 105 is 0. .2 mm (see FIG. 10). When the vapor deposition mask 101 and the substrate 108 are fixed by the magnetic chuck 107, a larger magnetic attraction force acts on the frame 103 having a thickness dimension larger than that of the mask main body 102. FIG. In addition, since the volume of the mask body 102 is reduced by the volume of the vapor deposition through holes 105 in the region 106 where the vapor deposition through holes 105 are formed, the magnetic attraction force acting on the region 106 is weakened. As a result, the frame 103 sinks toward the side of the relief recess 109, and as shown in the enlarged view of FIG. It may float. At this time, if the formation region 106 of the vapor deposition through hole 105 is lifted, a gap is generated between the substrate 108 and the vapor deposition through hole 105, so that the vapor deposition layer is formed in an appropriate shape as if it were greatly smeared, and is formed according to the vapor deposition pattern. A vapor deposited layer cannot be obtained. In particular, the bleeding becomes large on the outer edge side of the formation region 106 of the vapor deposition through holes 105 .

The present invention provides a vapor deposition mask having relief recesses on the lower surface of a frame, in which a pattern forming region provided in a mask body is properly brought into close contact with a substrate, and a vapor deposition layer corresponding to a vapor deposition pattern consisting of a large number of independent vapor deposition through holes. on a substrate with high precision.

The present invention comprises a mask body 2 having a vapor deposition pattern consisting of a large number of independent vapor deposition through holes 13, a reinforcing frame 3 having a mask opening 5 in which the mask body 2 is arranged, and an inner peripheral surface 5a of the mask opening 5. and a metal layer 4 extending toward the center of the opening to join each mask body 2 and frame 3 inseparably and integrally, and at least the lower surface on which the frame 3 is arranged is recessed upwardly. A vapor deposition mask having recesses 50 is targeted. Each mask body 2 includes an inner patterned region 8 in which deposition through-holes 13 are formed and an outer bonding region 9 covered with a metal layer 4 on top. A suction region 10 in which no through holes and/or recesses are formed is provided between the pattern formation region 8 and the bonding region 9 .

The metal layer 4 has a joint portion 4b extending inward from the inner peripheral surface 5a of the mask opening 5, and the joint portion 4b extends from the inner peripheral surface 5a of the mask opening 5 to the extending tip 4c of the metal layer 4. is the distance W1, and the distance of the adsorption region 10 from the extending tip 4c of the metal layer 4 to the pattern forming region 8 is W2, the distance W1 of the bonding portion 4b and the distance W2 of the adsorption region 10 are expressed by the formula It is set to satisfy (W2/(W1+W2)=0.4 to 0.8).

The distance W1 of the joint portion 4b and the distance W2 of the adsorption area 10 are set so as to satisfy an inequality (W2≧W1).

When the distance of the bonding area 9 of the mask body 2 is W3, the distance W3 of the bonding area 9 and the distance W2 of the adsorption area 10 are set so as to satisfy an inequality (W3≦W2).

When the thickness of the adsorption region 10 is T1 and the thickness of the bonding region 9 including the metal layer 4 is T2, the thickness T1 of the adsorption region 10 and the thickness T2 of the bonding region 9 satisfy an inequality (T1<T2). is set to

In the deposition mask according to the present invention, each mask body 2 is configured to include an inner pattern formation region 8 in which the deposition through hole 13 is formed and an outer bonding region 9 whose upper surface is covered with the metal layer 4, Between the pattern forming area 8 and the bonding area 9, an adsorption area 10 in which no through-holes and/or depressions are formed is provided. When the attraction area 10 is provided outside the pattern formation area 8 in this manner, the magnetic attraction force of the magnetic chuck 49 is greatly exerted on the outer periphery of the pattern formation area 8, so that the mask body 2 can be strongly attracted and held. In addition, by firmly sucking and holding the mask body 2, it is possible to prevent the frame 3 from sinking into the escape recess 50 side. can be eliminated. Even if the frame 3 sinks into the side of the escape recess 50 and the suction area 10 near the metal layer 4 floats up, the suction force acting on the suction area 10 lifts the mask body 2 again in the middle of the same area 10 . By closely contacting the substrate 48 , formation of a gap between the mask body 2 and the substrate 48 in the pattern formation region 8 can be prevented. As described above, according to the present invention, the pattern forming region 8 provided in the mask body 2 is properly brought into close contact with the substrate 48 so as to correspond to the vapor deposition pattern composed of a large number of independent vapor deposition through holes 13 on the substrate 48. A vapor deposition layer can be formed with high accuracy.

Assuming that the distance of the joint portion 4b is W1 and the distance of the adsorption area 10 is W2, the distance W1 and the distance W2 satisfy the formula (W2/(W1+W2)=0.4 to 0.8). When set, the attraction area 10 with sufficient magnetic attraction force can be formed around the pattern forming area 8, so that the magnetic attraction force acting on the attraction area 10 accurately brings the mask body 2 into close contact with the substrate 48. be able to.

The reason why the relationship between the distance W1 of the joint portion 4b and the distance W2 of the adsorption area 10 is set so as to satisfy the formula (W2/(W1+W2)=0.4 to 0.8) is as follows. If the value obtained by dividing the distance W2 by the distance W1+W2 is less than 0.4, the attraction area 10 is small and the magnetic attraction force does not sufficiently act on the attraction area 10, and the pattern formation area 8 is separated from the substrate 48. There is a risk. Further, when the value obtained by dividing the distance W2 by the distance W1+W2 exceeds 0.8, the relationship between the size of the frame 3 and the layout of the mask body 2 causes the pattern formation area 8 to extend from the inner peripheral surface 5a of the mask opening 5 to the pattern formation area 8. If the distance (W1+W2) to the mask body 2 cannot be formed long, the bonding region 9 of the mask body 2 becomes small and sufficient bonding strength between the metal layer 4 and the mask body 2 cannot be ensured.

It is desirable that the distance W1 of the joint portion 4b and the distance W2 of the adsorption area 10 are set so as to satisfy the inequality (W2≧W1). According to this, half or more of the distance (W1+W2) from the frame 3 to the vapor deposition through-hole 13 can be made the adsorption area 10, so that the adsorption area 10 on which a sufficient magnetic adsorption force acts is formed, and the mask is formed. The main body 2 can be firmly sucked and held.

If the distance W3 of the bonding region 9 and the distance W2 of the suction region 10 are set so as to satisfy the inequality (W3≦W2), the ratio of the suction region 10 in the mask body 2 excluding the pattern forming region 8 is By increasing the size, it is possible to form an attraction area 10 on which a sufficient magnetic attraction force acts.

When the thickness T1 of the attraction region 10 and the thickness T2 of the bonding region 9 including the metal layer 4 are set so as to satisfy the inequality (T1<T2), the magnetic force acting on the bonding region 9 including the metal layer 4 is reduced. The suction force prevents the frame 3 from sinking toward the side of the escape recess 50, thereby preventing the mask body 2 from rising.

1 is a longitudinal front view showing a main part of a vapor deposition mask according to the present invention; FIG. It is a perspective view which shows the whole vapor deposition mask. It is a vertical front view of a vapor deposition mask. It is a top view which shows the principal part of a vapor deposition mask. It is explanatory drawing which shows the front|former stage of the manufacturing method of a vapor deposition mask. It is explanatory drawing which shows interruption of the manufacturing method of a vapor deposition mask. It is explanatory drawing which shows the latter stage of the manufacturing method of a vapor deposition mask. FIG. 10 is a longitudinal front view showing another example of the forming region of the adhesion plating layer. It is a vertical front view for explaining the problem of the conventional vapor deposition mask. It is a vertical front view which shows the junction part of the conventional vapor deposition mask.

(Example) Figs. 1 to 7 show examples in which a vapor deposition mask according to the present invention is applied to a vapor deposition mask used for manufacturing an organic EL display. It should be noted that the dimensions such as thickness and width in each drawing of the present embodiment do not show the actual state but are shown schematically.

As shown in FIGS. 2 and 3, the vapor deposition mask 1 includes a plurality of (eight in this embodiment) mask bodies 2 arranged in a matrix and a reinforcing frame arranged so as to surround each mask body 2. It comprises a body 3 and a metal layer 4 which inseparably and integrally joins both 2,3. The frame 3 has the same number of mask openings 5 as the mask main body 2 . Each mask opening 5 is formed to be one size larger than the mask body 2 , and one mask body 2 is arranged in each mask opening 5 . Each mask opening 5 in this embodiment has a length dimension of 125 mm in the longitudinal direction and a length dimension of 71 mm in the width direction.

As shown in FIGS. 3 and 4, each mask body 2 is formed in a rectangular shape with rounded corners, and includes an inner pattern formation region 8, an outer bonding region 9, and a pattern formation region 8 and the bonding region. 9, and an adsorption area 10 provided between them. The adsorption region 10 is formed in a rectangular frame shape and surrounds the pattern forming region 8 , and the joining region 9 is formed in a rectangular frame shape and surrounds the adsorption region 10 . A vapor deposition pattern consisting of a large number of independent vapor deposition through-holes 13 is formed in the pattern forming region 8, and a large number of bonding through-holes 14 arranged in two rows along each side of the mask main body 2 in the bonding region 9. is formed. The adsorption area 10 is an area having a uniform plate thickness and having no through holes, recesses, or the like. Each mask body 2 of this embodiment has a length dimension of 122 mm in the longitudinal direction and a length dimension of 68 mm in the width direction. The width of each side of the bonding area 9 (distance W3, which will be described later) is 0.65 mm, and the width of each side of the suction area 10 (distance W2, which will be described later) is 1.7 mm. The longitudinal and lateral lengths of the mask body 2 correspond to the size of the manufactured organic EL display. The dimensions of the mask body 2 and the dimensions of the previous mask opening 5 are reference values when manufacturing an organic EL display, and the organic EL display can be used for smartphones, smart watches, head-up displays, head-mounted displays, and the like. can.

The mask body 2 is formed by electroforming using an electrodeposited metal made of nickel as a material. The thickness of each mask body 2 is preferably in the range of 8 to 100 μm, and set to 10 μm in this embodiment. In addition to nickel, the mask body 2 can be made of a nickel alloy such as nickel-cobalt, copper, or other electrodeposited metals. Furthermore, the mask body 2 may have a laminated structure of two or more layers. Specifically, for example, the mask body 2 having an upper layer made of a bright plating layer and a lower layer made of a matt plating layer is formed, and each layer can be set to, for example, upper layer:lower layer=5:7. In the mask body 2 having a laminated structure of two or more layers, the order of the bright plating layer and the matte plating layer and the thickness ratio of each layer can be freely set.

The metal layer 4 joins the mask main body 2 and the frame 3, and is formed by an electroforming method using an electrodeposited metal made of nickel as a raw material. Specifically, the metal layer 4 includes a covering portion 4a that covers the upper surface of the frame 3, and a connecting portion 4b that continues from the covering portion 4a and extends from the inner peripheral surface 5a of the mask opening 5 toward the center of the opening. It has The upper surface of the joint region 9 of the mask body 2 is covered with the extension tip 4c side of the joint portion 4b, and the mask body 2 and the frame 3 are joined at this portion. The metal layer 4 may have a form in which the covering portion 4a is omitted. In this case, the upper surface of the frame 3 is exposed to the outer surface of the deposition mask 1.

As shown in FIG. 2 , the frame 3 includes a rectangular outer peripheral frame 17 and a lattice frame 18 that partitions the mask opening 5 within the outer peripheral frame 17 . As shown in an enlarged view in FIG. 3, the frame 3 has a laminated structure, and is configured by bonding together an upper frame 19 and a lower frame 20 having the same shape with an adhesive layer 21 . The upper frame 19 and the lower frame 20 are made of a metal plate material having a low linear thermal expansion coefficient made of Invar material, which is a nickel-iron alloy. The thickness dimension of the upper frame 19 and the lower frame 20 in this embodiment is 0.5 mm (thickness dimension of the frame 3 is 1.0 mm), and the frame 3 is sufficiently thicker than the mask main body 2. . The width of each side of the peripheral frame 17 is 20 mm, and the width of each frame of the lattice frame 18 is 10 mm. The dimensions of the frames 17 and 18 change as appropriate depending on the number of mask bodies 2 arranged, the size of the substrate 48, and the like.

The upper frame 19 and the lower frame 20 may be made of a nickel-iron-cobalt alloy, Super Invar, etc., other than the Invar material. may In addition to the two-layer structure of the upper frame 19 and the lower frame 20, the frame 3 may have a laminated structure of three or more layers or a single layer structure. A four-layer structure in which two layers are laminated together may be adopted. As the adhesive layer 21, a sheet-like uncured photosensitive dry film resist, various commercially available adhesives, and the like can be used.

An example of the manufacturing method of the vapor deposition mask 1 according to this embodiment is shown in FIGS. First, as shown in FIG. 5A, a negative photoresist layer 25 is formed on the surface of a conductive electroformed matrix 24 made of stainless steel or brass, for example. Next, a pattern film 26 made of a glass mask is brought into close contact with the photoresist layer 25 to obtain a patterning pre-stage body 27 . The pattern film 26 is formed with light transmitting holes 26 a corresponding to the vapor deposition through holes 13 of the mask body 2 and light transmitting holes 26 b corresponding to the bonding through holes 14 of the mask body 2 . Furthermore, the pattern film 26 is formed with a transparent frame 26 c corresponding to the outer periphery of the mask body 2 .

Next, the inside of the furnace of the ultraviolet irradiation device having the ultraviolet lamp 28 is preheated to the furnace temperature during the exposure work. After the preheating is completed, the obtained pre-patterning body 27 is housed in the furnace of the ultraviolet irradiation device, and after the pre-patterning body 27 is adapted to the temperature inside the furnace, the pre-patterning body 27 is irradiated with ultraviolet light from the ultraviolet lamp 28. , the photoresist layer 25 is exposed through the pattern film 26 . After the exposure, the patterning preform 27 is taken out, the pattern film 26 is removed from the photoresist layer 25, and the unexposed portions of the photoresist layer 25 are dissolved and removed (developed). A primary pattern resist 29 is formed on the electroforming matrix 24 . The primary pattern resist 29 is composed of resist bodies 29a to 29c corresponding to the transparent holes 26a and 26b and the transparent frame 26c of the pattern film 26. As shown in FIG.

Next, as shown in FIG. 5(c), by subjecting the surface of the electroforming master 24 not covered with the resist bodies 29a to 29c to an electroforming process, the height of the resist bodies 29a to 29c is within the range of the height of the resist bodies 29a to 29c. A primary electroformed layer 30 is formed. The primary electroformed layer 30 is composed of a plurality of mask bodies 2 forming a finished product of the vapor deposition mask 1 and a frame supporting portion 31 removed before completion. After forming the primary electroformed layer 30, the primary pattern resist 29 is dissolved and removed as shown in FIG. 5(d). As a result, vapor deposition through-holes 13 and bonding through-holes 14 of mask body 2 appear.

In the next step, an adhesion plating layer 34 (see FIG. 3) is formed to increase the bonding strength (adhesion) of the metal layer 4 to the mask body 2 . In the mask body 2 of this embodiment, the adhesion plating layer 34 is formed on the upper surface and the outer peripheral surface of the bonding region 9 and the inner peripheral surface of the bonding through-hole 14 . The adhesion plating layer 34 is formed sufficiently thinner than the primary electroformed layer 30 by strike plating or matte plating using nickel, copper, or the like as a material.

As a procedure for forming the adhesion plating layer 34, first, as shown in FIG. 6A, a negative photoresist layer 35 is formed on the entire surface of the primary electroforming layer 30, and a pattern film 36 is adhered thereon. The pattern film 36 includes a rectangular frame-shaped non-light-transmitting portion 36a corresponding to the joint region 9 of the mask body 2, and a light-transmitting portion 36b occupying the other portion. Next, the photoresist layer 35 is exposed through the pattern film 36 by irradiating ultraviolet light from the ultraviolet lamp 28 . After the exposure, the pattern film 36 is removed from the photoresist layer 35, and the unexposed portions of the photoresist layer 35 are dissolved and removed (developed) to form the pattern resist 37 shown in FIG. 6(b). This pattern resist 37 has openings 37 a that expose the bonding regions 9 of the mask body 2 . In other words, the pattern resist 37 covers the entire surface of the primary electroformed layer 30 excluding the forming region of the adhesion plating layer 34 .

Next, by applying a plating treatment (adhesion treatment) to the surface of the primary electroformed layer 30 facing the opening 37a, an adhesion plating layer 34 shown enlarged in FIG. 6(c) can be formed. The adhesion plating layer 34 is also inevitably formed on the surface of the electroforming master 24 facing the opening 37a. Since it interferes with peeling from 24, it is preferable to make the area as small as possible. When the pattern resist 37 is dissolved and removed after the adhesion plating layer 34 is formed, the state shown in FIG. 6C is obtained. Instead of forming the adhesion plating layer 34 on the joint region 9 and the joint hole 14, an activation treatment (adhesion treatment) such as acid immersion or electrolytic treatment may be performed. This also increases the bonding strength (adhesion) of the metal layer 4 to the mask body 2 .

In the next step, the frame 3 is joined to the mask body 2 of the primary electroformed layer 30 with the metal layer 4 . Specifically, first, as shown in FIG. 7A, a negative type photoresist layer 40 is formed on the entire surface of the primary electroformed layer 30 on which the adhesion plating layer 34 is formed, and a pattern film 41 is adhered thereon. Let The pattern film 41 has rectangular translucent holes 41 a with rounded corners corresponding to the pattern forming region 8 and the adsorption region 10 of the mask body 2 .

Next, the photoresist layer 40 is exposed through the pattern film 41 by irradiating ultraviolet light from the ultraviolet lamp 28 . After the exposure, the pattern film 41 is removed from the photoresist layer 40, and the unexposed portions of the photoresist layer 40 are dissolved and removed (developed) to form the secondary pattern resist 42 shown in FIG. 7(b). The secondary pattern resist 42 covers the surface of the pattern forming region 8 and the adsorption region 10 of the mask body 2 . Since the vapor deposition through holes 13 in the pattern forming region 8 are covered with the secondary pattern resist 42, the electroforming liquid does not enter the through holes 13 during the subsequent electroforming process.

Next, as shown in FIG. 7C, the frame 3 is placed at a predetermined position on the upper surface of the frame supporting portion 31 of the primary electroformed layer 30 . The frame body support portion 31 is formed slightly larger than the frame body 3 in plan view. An adhesive layer 45 is laminated in advance on the lower surface of the frame 3 supported by the frame supporting portion 31 via a peeling layer 44 . It is fixed so that it cannot move. In this embodiment, the release layer 44 is made of nickel, and the adhesive layer 45 is made of an unexposed photoresist layer.

Next, as shown in FIG. 7(d), plating is applied to form a secondary electroformed layer, that is, a metal layer 4 that is continuous from the surface of the frame 3 to the mask body 2. Next, as shown in FIG. The metal layer 4 on the surface of the primary electroformed layer 30 is formed within the height range of the secondary pattern resist 42 . At this time, by forming the metal layer 4 in the bonding through-hole 14 , together with forming the adhesion plating layer 34 on the inner peripheral surface of the bonding through-hole 14 , the metal layer on the mask body 2 The bonding strength of 4 is further improved. After the electroforming process, the primary electroformed layer 30 and the metal layer 4 are separated from the electroformed matrix 24 . Next, by peeling the frame body support portion 31 of the primary electroformed layer 30 together with the adhesive layer 45 and the peeling layer 44 from the frame body 3 and the metal layer 4, a relief recess 50, which will be described later, is formed. Finally, by removing the secondary pattern resist 42, the finished vapor deposition mask 1 shown in FIG. 7(e) can be obtained. The removal of the secondary pattern resist 42 may be performed before the primary electroformed layer 30 and the metal layer 4 are peeled off, or may be performed before the frame supporting portion 31, the adhesive layer 45 and the peeling layer 44 are peeled off. good.

In the completed vapor deposition mask 1 separated from the electroformed matrix 24 , each mask body 2 is subjected to a stress that tends to shrink inward. This is because the liquid temperature (for example, 40 to 50° C.) in the electroforming tank when forming the primary electroforming layer 30 including the mask body 2 is higher than room temperature. Tensile stress acts on the frame 3 through the metal layer 4 when each mask body 2 tries to shrink.

The vapor deposition layer (light-emitting layer) is formed on the substrate (vapor deposition target) 48 in a vapor deposition apparatus in which the vapor deposition mask 1 and the substrate 48 are tightly fixed. Specifically, as shown in FIG. 1, the substrate 48 is aligned and placed on the magnetic chuck 49 that is demagnetized, and then the vapor deposition mask 1 is aligned and placed on the substrate 48 . By magnetizing the magnetic chuck 49 in this state, the vapor deposition mask 1 and the substrate 48 are stacked vertically on the magnetic chuck 49, and the mask main body 2 is immovably fixed in close contact with the surface of the substrate 48. be done. In order to prevent the lower surface of the vapor deposition mask 1 other than the mask body 2 from contacting the substrate 48 as much as possible when both 1 and 48 are fixed, relief recesses are provided under the frame 3 and the metal layer 4 close to the frame 3 . 50 is recessed upward. This relief recess 50 is provided to prevent the surface of the substrate 48 from being scratched due to contact with anything other than the mask body 2 .

When the magnetic chuck 49 is magnetized, a larger magnetic attracting force acts on the frame 3 which is thicker than the mask body 2 . Therefore, the frame body 3 tries to sink into the side of the escape recess 50, but as described above, the mask body 2 of the present embodiment is provided with the adsorption region 10 outside the pattern formation region 8. , the magnetic attraction force of the magnetic chuck 49 is greatly exerted on the outer periphery of the pattern forming region 8, so that the mask body 2 can be attracted to the magnetic chuck 49 and strongly attracted and held. In addition, by firmly sucking and holding the mask body 2, it is possible to prevent the frame 3 from sinking into the escape recess 50 side. can be eliminated. Even if the frame body 3 sinks into the side of the escape recess 50 and the attraction area 10 near the metal layer 4 floats up, the magnetic attraction force acting on the attraction area 10 causes the mask body 2 to reappear in the middle of the same area 10 . can be brought into close contact with the substrate 48 to prevent formation of a gap between the mask body 2 and the substrate 48 in the pattern formation region 8 . As described above, according to the present embodiment, the pattern forming region 8 provided in the mask body 2 is properly brought into close contact with the substrate 48 so as to correspond to the vapor deposition pattern formed of the numerous independent vapor deposition through holes 13 on the substrate 48. A deposited layer can be formed with high accuracy.

The distance from the bonding portion 4b provided in the metal layer 4, that is, the inner peripheral surface 5a of the mask opening 5 to the extending tip 4c of the metal layer 4 is W1, and the adsorption region 10, that is, the pattern forming region from the extending tip 4c of the metal layer 4. When the distance to 8 is W2, the distance W1 of the joint 4b and the distance W2 of the adsorption area 10 are set so as to satisfy the formula (W2/(W1+W2)=0.4 to 0.8). there is When the distance W1 and the distance W2 are set so as to satisfy the formula (W2/(W1+W2)=0.4 to 0.8) in this way, sufficient magnetism is generated around the pattern forming area 8. Since the attraction area 10 that provides the attraction force can be formed, the magnetic attraction force of the magnetic chuck 49 acting on the attraction area 10 can accurately bring the mask body 2 into close contact with the substrate 48 .

As described above, the relationship between the distance W1 of the joint portion 4b and the distance W2 of the adsorption area 10 is set so as to satisfy the formula (W2/(W1+W2)=0.4 to 0.8) as follows. Depend on the reason. If the value obtained by dividing the distance W2 by the distance W1+W2 is less than 0.4, the magnetic attraction force of the magnetic chuck 49 does not sufficiently act on the attraction area 10 because the attraction area 10 is small, and the pattern formation area 8 is not close to the substrate. There is a risk that it will float away from 48. Further, when the value obtained by dividing the distance W2 by the distance W1+W2 exceeds 0.8, the distance W1 cannot be formed long due to the relationship between the size of the frame 3 and the number of mask bodies 2 arranged, and the joining of the mask bodies 2 is difficult. The region 9 becomes smaller, and sufficient bonding strength between the metal layer 4 and the mask body 2 cannot be ensured.

It is desirable that the distance W1 of the joint portion 4b and the distance W2 of the adsorption area 10 are set so as to satisfy the inequality (W2≧W1). According to this, since half or more of the distance (W1+W2) from the frame 3 to the vapor deposition through-hole 13 can be made the adsorption area 10, the adsorption area 10 where sufficient magnetic adsorption force acts is formed, and the magnet The magnetic attraction force of the chuck 49 allows the mask body 2 to be reliably attracted and held to the substrate 48 and brought into close contact therewith. In addition, when the distance W1 of the joint portion 4b is set to 1.0 mm or more and 1.5 mm or less, the distance W2 of the adsorption area 10 is preferably 1.5 mm or more and 2.0 mm or less. In this embodiment, the distance W1 is 1.2 mm and the distance W2 is 1.7 mm.

It is desirable that the distance (W1+W2) from the inner peripheral surface 5a of the mask opening 5 to the pattern formation area 8 is set to 2.5 mm or more and 10.0 mm or less. This is based on the following reasons. If the distance (W1+W2) is less than 2.5 mm, the bonding region 9 of the mask body 2 becomes small, and the bonding strength between the metal layer 4 and the mask body 2 cannot be sufficiently secured. Since the magnet chuck 49 is small, the magnetic attraction force of the magnetic chuck 49 does not sufficiently act on the attraction area 10 , and the mask body 2 may be lifted and separated from the substrate 48 . Further, if the distance (W1+W2) exceeds 10.0 mm, the size of the vapor deposition mask 1 is increased and the yield of the substrate 48 is deteriorated. On the other hand, when trying to obtain a substrate 48 with a good yield, the width dimensions of the outer peripheral frame 17 and the lattice frame 18 of the frame 3 have to be reduced. cause damage to the

Assuming that the distance of the bonding region 9 of the mask body 2 is W3 (see FIG. 1), the distance W3 of the bonding region 9 and the distance W2 of the adsorption region 10 satisfy the inequality (W3≤W2) as described above. If it is set so as to be satisfactory, it is possible to increase the proportion of the attraction area 10 in the mask body 2 excluding the pattern forming area 8 and form the attraction area 10 on which a sufficient magnetic attraction force acts.

Further, when the thickness of the adsorption region 10 is T1 and the thickness of the bonding region 9 including the metal layer 4 is T2 (see FIG. 3), the thickness T1 of the adsorption region 10 and the thickness T2 of the bonding region 9 are expressed by an inequality: When (T1<T2) is satisfied, the magnetic adsorption force acting on the bonding region 9 including the metal layer 4 suppresses the frame 3 from sinking toward the recessed portion 50, thereby suppressing the mask main body. 2 can be prevented from rising.

The area of the adsorption area 10 in this embodiment can be formed larger than the area of the pattern forming area 8 excluding the vapor deposition through holes 13 . Thus, when the areas of the regions 8 and 10 satisfy the above relationship, a larger magnetic attraction force can be exerted on the attraction region 10, so that the floating of the pattern formation region 8 can be reliably eliminated.

FIG. 8 shows another embodiment of the formation area of the adhesion plating layer 34. In FIG. Compared with the adhesion plating layer 34 of the above embodiment, the adhesion plating layer 34 of this embodiment does not have the peripheral side surface portion and the upper peripheral edge portion of the mask body 2 . The adhesion plating layer 34 may be formed on the bonding through-hole 14 portion and the upper surface portion of the mask body 2 that is continuous with the bonding through-hole 14 .

The number and layout of the mask bodies 2 included in the vapor deposition mask 1 are not limited to those shown in the above embodiments. Moreover, the number of mask bodies 2 does not need to be plural and may be one. The dimensions and the like of each part are not limited to those shown in the above embodiments. In the above embodiment, the vapor deposition mask 1 and the substrate 48 are closely fixed by magnetic attraction, but both 1 and 48 can also be tightly fixed by electrostatic attraction or vacuum (negative pressure) attraction. In this case also, the lifting of the mask body 2 can be eliminated by the electrostatic attraction force or vacuum attraction force acting on the attraction area 10 provided on the mask body 2 . In addition, in the case of the frame 3 having a large thickness, the weight of the frame 3 may cause the frame 3 to sink toward the escape recess 50 and the mask body 2 to float up, even without using the above-described adhesive fixing means. By ensuring the distance W2 (attraction region 10) from the extending tip 4c of the metal layer 4 to the pattern forming region 8, the mask body 2 is brought into close contact with the substrate 48 again in the middle of the distance W2 (attraction region 10). , and formation of a gap between the mask body 2 and the substrate 48 in the pattern formation region 8 can be prevented.

The vapor deposition mask 1 of the present invention is not limited to those used for manufacturing organic EL displays. The mask structure of the vapor deposition mask 1 can also be used as a screen printing mask, a solder ball mounting mask, and a solder ball adsorption mask. In the case of the screen printing mask, a group of pattern openings matching the printing pattern are formed in the pattern forming area 8, and in the case of the solder ball mounting mask, the pattern forming area 8 has slightly larger diameters than the solder balls. A group of mounting holes is formed, and in the case of a solder ball adsorption mask, a group of mounting holes having a diameter slightly smaller than that of the solder balls is formed in the pattern forming region 8 .

As a reference example capable of suppressing the lifting of the mask body 2, a configuration in which there is no escape recess 50 on the lower surface side of the frame 3 or a configuration in which a support is formed in the escape recess 50 is also conceivable. As a specific example of the former forming method, the adhesive layer 45 and the peeling layer 44 formed on the lower surface of the frame 3 and the frame support portion 31 on which the frame 3 is placed are combined with the frame 3 and the metal layer. 4 may be left without being removed. However, the adhesion layer 45 may adversely affect the formation of the light-emitting layer due to deterioration due to vapor deposition (heating). As a specific example of the latter, a support (metal body) is formed in the relief recess 50 so that the lower surface of the support and the lower surface of the mask body 2 are aligned. As a method of forming such a support, as shown in FIG. 7(e), after removing the frame supporting portion 31, the adhesive layer 45 and the release layer 44, the support (metal body) is separately placed in the recess 50. It is conceivable to form

1 Evaporation Mask 2 Mask Body 4 Metal Layer 4b Joint 4c Extension Tip 5 Mask Opening 5a Inner Peripheral Surface 8 Pattern Forming Region 9 Joint Region 10 Adsorption Region 13 Vapor Vapor Hole 50 Relief Recess W1 Distance W2 of Joining Portion of Metal Layer Mask Distance W3 of adsorption area of main body Distance of bonding area of mask main body

Claims (4)

A mask body (2) having a vapor deposition pattern consisting of a large number of independent vapor deposition through holes (13), a reinforcing frame (3) having a mask opening (5) in which the mask body (2) is arranged, and a mask opening. A metal layer (4) extending from the inner peripheral surface (5a) of (5) toward the center of the opening and joining the mask body (2) and the frame body (3) inseparably and integrally, at least the frame A vapor deposition mask having a relief recess (50) recessed in the lower surface where the body (3) is arranged,
each mask body (2) comprises an inner patterned area (8) in which deposition through-holes (13) are formed and an outer bonding area (9) covered with a metal layer (4) on top,
An adsorption region (10) in which no through-holes and/or recesses are formed is provided between the pattern formation region (8) and the bonding region (9) ,
The metal layer (4) has a joint (4b) extending inwardly from the inner peripheral surface (5a) of the mask opening (5),
The distance of the joint (4b) from the inner peripheral surface (5a) of the mask opening (5) to the extending tip (4c) of the metal layer (4) is (W1), and the extending tip (4c) of the metal layer (4) is ) to the pattern forming region (8), the distance (W1) of the bonding portion (4b) and the distance (W2) of the adsorption region (10) are , (W2/(W1+W2)=0.4 to 0.8) . 2. The vapor deposition mask according to claim 1 , wherein the distance (W1) of said joint (4b) and the distance (W2) of said adsorption area (10) are set so as to satisfy an inequality (W2≧W1). When the distance (W3) of the bonding region (9) of the mask body (2) is defined as (W3), the distance (W3) of the bonding region (9) and the distance (W2) of the adsorption region (10) are expressed by the inequality (W3 3. The vapor deposition mask according to claim 2 , which is set so as to satisfy ≦W2). When the thickness of the adsorption region (10) is (T1) and the thickness of the bonding region (9) including the metal layer (4) is (T2), the thickness (T1) of the adsorption region (10) and the bonding region ( 4. The deposition mask according to any one of claims 1 to 3 , wherein the thickness (T2) of 9) is set so as to satisfy the inequality (T1<T2).

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