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JP7154962B2 - Plate-shaped object processing method - Google Patents

Plate-shaped object processing method Download PDF

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JP7154962B2
JP7154962B2 JP2018211534A JP2018211534A JP7154962B2 JP 7154962 B2 JP7154962 B2 JP 7154962B2 JP 2018211534 A JP2018211534 A JP 2018211534A JP 2018211534 A JP2018211534 A JP 2018211534A JP 7154962 B2 JP7154962 B2 JP 7154962B2
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sheet
thermocompression
dividing
heating temperature
plate
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JP2020077812A (en
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良彰 淀
逸人 木内
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Disco Corp
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Priority to KR1020190141804A priority patent/KR102733400B1/en
Priority to TW108140392A priority patent/TWI830807B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
    • B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
    • B26D1/12—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis
    • B26D1/14—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter
    • B26D1/143—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter rotating about a stationary axis
    • B26D1/15—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter rotating about a stationary axis with vertical cutting member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Forests & Forestry (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laser Beam Processing (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Description

本発明は、板状の被加工物を個々のチップに分割する板状物加工方法の発明に関する。 The present invention relates to a plate-like workpiece processing method for dividing a plate-like workpiece into individual chips.

ＩＣ、ＬＳＩ等の複数のデバイスが分割予定ラインによって区画され表面に形成された板状のウエーハ、又はＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ Ｐａｃｋａｇｅ）が分割予定ラインによって区画され表面に形成されたＣＳＰ基板は、切削ブレードを備えたダイシング装置、レーザー加工装置等によって個々のチップに分割され、携帯電話、パソコン等の電気機器に利用される。 A plate-shaped wafer having a plurality of devices such as ICs, LSIs, etc. divided by dividing lines and formed on its surface, or a CSP substrate having CSPs (Chip Size Packages) divided by dividing lines and formed on its surface, is cut by a cutting blade. It is divided into individual chips by a dicing device equipped with a laser processing device, etc., and is used in electrical equipment such as mobile phones and personal computers.

ダイシング装置によって、ウエーハ又はＣＳＰ基板の分割予定ラインに沿って切削すると、切削屑がウエーハ又はＣＳＰ基板の表面に付着してデバイス又はＣＳＰを汚染する。同様に、レーザー加工装置によってウエーハ又はＣＳＰ基板の分割予定ラインにレーザー光線を照射してアブレーション加工を施すと、デブリが飛散して、デバイス又はＣＳＰを汚染する。これらの汚染からデバイスの表面を守るべく、ウエーハ又はＣＳＰ基板の表面に保護テープを貼着して、切削屑や、デブリによる汚染からデバイスの表面を守ることが提案されている（例えば、特許文献１を参照。）。 When a wafer or a CSP substrate is cut along a dividing line by a dicing machine, shavings adhere to the surface of the wafer or the CSP substrate and contaminate the device or the CSP. Similarly, when a laser beam is applied to a dividing line of a wafer or a CSP substrate by a laser processing apparatus to perform ablation processing, debris scatters and contaminates the device or the CSP. In order to protect the surface of the device from these contaminations, it has been proposed to attach a protective tape to the surface of the wafer or CSP substrate to protect the surface of the device from contamination by shavings and debris (see, for example, Patent Documents 1).

特開２００７－１３４３９０号公報Japanese Patent Application Laid-Open No. 2007-134390

上記したように、ダイシング装置、又はレーザー加工装置による加工を施す際に、ウエーハ又はＣＳＰ基板の表面に保護テープを配設し、保護テープと共にウエーハ又はＣＳＰ基板に対する分割加工を施すことで、切削屑やデブリによる汚染からデバイス又はＣＳＰを守ることができる。しかし、ウエーハ又はＣＳＰ基板の表面に保護テープを貼着した状態で個々のチップに分割すると、表面に貼着される保護テープもチップ毎に個片化されてしまい、分割加工を施した後、個々のチップの表面から個片化された保護テープを一つ一つ剥離しなければならず、作業が極めて困難であり、生産効率が著しく低下する。 As described above, when performing processing with a dicing device or a laser processing device, a protective tape is provided on the surface of the wafer or CSP substrate, and the wafer or CSP substrate is divided along with the protective tape, thereby removing cutting waste. It can protect the device or CSP from contamination by dust and debris. However, if a wafer or a CSP substrate with a protective tape adhered to its surface is divided into individual chips, the protective tape adhered to the surface is also separated into individual chips. The individualized protective tape must be peeled off from the surface of each chip one by one, which is extremely difficult and greatly reduces production efficiency.

本発明は、上記事実に鑑みなされたものであり、その主たる技術課題は、ウエーハ又はＣＳＰ基板等の板状物の表面を保護しながら分割する場合であっても、生産効率を悪化させない板状物の加工方法を提供することにある。 The present invention has been made in view of the above-mentioned facts, and its main technical problem is to provide a plate-shaped material that does not deteriorate production efficiency even when dividing a plate-shaped object such as a wafer or a CSP substrate while protecting the surface thereof. To provide a method for processing an object.

上記主たる技術課題を解決するため、本発明によれば、板状の被加工物を個々のチップに分割する板状物加工方法であって、被加工物の裏面に支持部材を配設する支持部材配設工程と、該支持部材配設工程の前、又は後に被加工物の表面に熱圧着シートを敷設し加熱して熱圧着するシート配設工程と、分割すべき領域に分割手段を位置付けて該熱圧着シートと共に被加工物を個々のチップに分割する分割工程と、個々のチップに対応して分割された熱圧着シートを加熱し溶融させ分割工程において分割された熱圧着シートを連結して一体化する一体化工程と、一体化した熱圧着シートを被加工物から剥離する剥離工程と、から少なくとも構成される板状物加工方法が提供される。 In order to solve the above-mentioned main technical problems, according to the present invention, there is provided a plate-shaped workpiece processing method for dividing a plate-shaped workpiece into individual chips, wherein a support member is disposed on the back surface of the workpiece. A member arranging step, a sheet arranging step of laying a thermocompression bonding sheet on the surface of the workpiece before or after the supporting member arranging step, heating and thermocompression bonding, and positioning the dividing means in the region to be divided. a dividing step of dividing the workpiece together with the thermocompression bonding sheet into individual chips; and a peeling step of peeling the integrated thermocompression sheet from the workpiece.

該分割工程は、外周に切り刃を有する切削ブレードを回転可能に備えた切削手段、又は、レーザー光線を照射して板状物にアブレーション加工を施すレーザー光線照射手段のいずれかである。また、被加工物は、複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハとすることができる。 The dividing step is performed by either cutting means having a rotatable cutting blade having a cutting edge on its outer periphery, or laser beam irradiation means for ablating the plate-shaped object by irradiating it with a laser beam. Also, the workpiece can be a wafer having a plurality of devices partitioned by dividing lines and formed on the surface thereof.

該熱圧着シートは、ポリオレフィン系のシート、又はポリエステル系のシートから選択されることが好ましい。 The thermocompression-bonded sheet is preferably selected from polyolefin-based sheets and polyester-based sheets.

該ポリオレフィン系のシートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかから選択することができる。該シート配設工程において、ポリオレフィン系のシートから選択される熱圧着シートが、ポリエチレンシートである場合の加熱温度は１２０℃～１４０℃であり、ポリプロピレンシートである場合の加熱温度は１６０℃～１８０℃であり、ポリスチレンシートである場合の加熱温度は、２２０℃～２４０℃であり、該一体化工程において、該熱圧着シートが、ポリエチレンシートである場合の加熱温度は１６０℃以上であり、ポリプロピレンシートである場合の加熱温度は２００℃以上であり、ポリスチレンシートである場合の加熱温度は２６０℃以上であることが好ましい。 The polyolefin-based sheet can be selected from polyethylene sheet, polypropylene sheet, and polystyrene sheet. In the sheet arrangement step, the heating temperature is 120° C. to 140° C. when the thermocompression bonding sheet selected from polyolefin sheets is a polyethylene sheet, and the heating temperature is 160° C. to 180° C. when it is a polypropylene sheet. ° C., the heating temperature in the case of a polystyrene sheet is 220 ° C. to 240 ° C., and in the integration step, the heating temperature in the case where the thermocompression sheet is a polyethylene sheet is 160 ° C. or higher, and polypropylene The heating temperature in the case of a sheet is preferably 200° C. or higher, and the heating temperature in the case of a polystyrene sheet is preferably 260° C. or higher.

該ポリエステル系シートは、ポリエチレンテレフタレートシート、又はポリエチレンナフタレートシートから選択することができる。該シート配設工程において、ポリエステル系のシートから選択される熱圧着シートが、ポリエチレンテレフタレートシートである場合の加熱温度は２５０℃～２７０℃であり、ポリエチレンナフタレートシートである場合の加熱温度は１６０℃～１８０℃であり、該一体化工程において、該熱圧着シートが、ポリエチレンテレフタレートシートである場合の加熱温度は２９０℃以上であり、ポリエチレンナフタレートシートである場合の加熱温度は２００℃以上であることが好ましい。 The polyester sheet can be selected from a polyethylene terephthalate sheet or a polyethylene naphthalate sheet. In the sheet arrangement step, the heating temperature is 250° C. to 270° C. when the thermocompression bonding sheet selected from polyester sheets is a polyethylene terephthalate sheet, and the heating temperature is 160° C. when it is a polyethylene naphthalate sheet. ° C. to 180 ° C., and in the integration step, the heating temperature is 290 ° C. or higher when the thermocompression sheet is a polyethylene terephthalate sheet, and the heating temperature is 200 ° C. or higher when it is a polyethylene naphthalate sheet. Preferably.

本発明の板状物加工方法は、被加工物の裏面に支持部材を配設する支持部材配設工程と、該支持部材配設工程の前、又は後に被加工物の表面に熱圧着シートを敷設し加熱して熱圧着するシート配設工程と、分割すべき領域に分割手段を位置付けて該熱圧着シートと共に被加工物を個々のチップに分割する分割工程と、個々のチップに対応して分割された熱圧着シートを加熱し溶融させ分割工程において分割された熱圧着シートを連結して一体化する一体化工程と、一体化した熱圧着シートを被加工物から剥離する剥離工程と、から少なくとも構成されることにより、切削屑、又はデブリがウエーハや、ＣＳＰ基板等の板状物の表面に付着して汚染することを防止すると共に、分割されたデバイスチップや、ＣＳＰチップ毎に個片化された熱圧着シートを連結し一括して剥離することができる。これにより、個片化された熱圧着シートを個々のデバイスチップやＣＳＰチップから一つ一つ剥離する必要がなく、生産性を悪化させることがない。 The plate-shaped object processing method of the present invention includes a supporting member disposing step of disposing a supporting member on the back surface of a workpiece, and a thermocompression sheet is applied to the surface of the workpiece before or after the supporting member disposing step. A sheet arrangement step of laying, heating and thermocompression bonding, a division step of positioning a dividing means in a region to be divided and dividing the workpiece together with the thermocompression sheet into individual chips, corresponding to each chip From an integrating step of heating and melting the divided thermocompression bonding sheets to connect and integrate the divided thermocompression bonding sheets in the dividing step, and a peeling step of peeling the integrated thermocompression bonding sheets from the workpiece. At least, it is possible to prevent shavings or debris from adhering to and contaminating the surface of a plate-shaped object such as a wafer or a CSP substrate, and to separate device chips and CSP chips into individual pieces. The thermocompression-bonded sheets can be joined together and peeled off together. As a result, it is not necessary to separate the individualized thermocompression sheets from individual device chips or CSP chips one by one, and productivity is not deteriorated.

ウエーハ、及び熱圧着シートの斜視図である。1 is a perspective view of a wafer and a thermocompression-bonded sheet; FIG. シート配設工程の実施態様を示す斜視図である。It is a perspective view which shows the embodiment of a sheet|seat arrangement|positioning process. 支持部材配設工程の実施態様を示す斜視図である。It is a perspective view which shows the embodiment of a support member arrangement|positioning process. （ａ）ダイシング装置によって実施される分割工程の実施態様を示す斜視図、（ｂ）レーザー加工装置によって実施される分割工程の実施態様を示す斜視図である。(a) A perspective view showing an embodiment of a dividing step performed by a dicing device, (b) A perspective view showing an embodiment of a dividing step performed by a laser processing device. 分割工程によって分割されたウエーハの斜視図である。FIG. 4 is a perspective view of a wafer divided by a dividing step; 一体化工程の実施態様を示す斜視図である。FIG. 4 is a perspective view showing an embodiment of the integration process; 剥離工程の実施態様を示す斜視図である。It is a perspective view which shows the embodiment of a peeling process.

以下、本発明に基づき構成される板状物加工方法に係る実施形態について、添付図面を参照して、更に詳細に説明する。 BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a method for processing a plate-like object based on the present invention will be described in more detail below with reference to the accompanying drawings.

（シート配設工程）
本実施形態を実施するに当たり、まず、図１に示すように、板状の被加工物として、半導体（例えばＳｉ）からなるウエーハ１０と、熱圧着シート２０を用意する。ウエーハ１０は、複数のデバイス１２が分割予定ライン１４によって区画され表面１０ａに形成されたウエーハである。 (Sheet arrangement process)
In carrying out the present embodiment, first, as shown in FIG. 1, a wafer 10 made of a semiconductor (for example, Si) and a thermocompression bonding sheet 20 are prepared as plate-like workpieces. The wafer 10 is a wafer in which a plurality of devices 12 are partitioned by dividing lines 14 and formed on a surface 10a.

熱圧着シート２０は、熱圧着に適する素材から選択される。熱圧着に適する素材とは、所定の温度範囲に加熱することにより軟化して粘着性を発揮する素材から選択されることが好ましい。より具体的には、ポリオレフィン系のシート、又はポリエステル系のシートから選択することができる。 The thermocompression bonding sheet 20 is selected from materials suitable for thermocompression bonding. The material suitable for thermocompression bonding is preferably selected from materials that soften and exhibit adhesiveness when heated to a predetermined temperature range. More specifically, it can be selected from a polyolefin-based sheet or a polyester-based sheet.

さらに具体的にいえば、熱圧着シート２０をポリオレフィン系のシートから選択する場合は、ポリエチレン（ＰＥ）シート、ポリプロピレン（ＰＰ）シート、ポリスチレン（ＰＳ）シートのいずれかから選択することが好ましい。また、熱圧着シート２０をポリエステル系のシートから選択する場合は、ポリエチレンテレフタレート（ＰＥＴ）シート、ポリエチレンナフタレート（ＰＥＮ）シートのいずれかから選択することが好ましい。なお、以下説明する実施形態においては、熱圧着シート２０として、ポリエチレンシートを選択したものとして説明を続ける。 More specifically, when the thermocompression bonding sheet 20 is selected from polyolefin sheets, it is preferable to select from polyethylene (PE) sheet, polypropylene (PP) sheet, or polystyrene (PS) sheet. When the thermocompression bonding sheet 20 is selected from polyester sheets, it is preferable to select from either a polyethylene terephthalate (PET) sheet or a polyethylene naphthalate (PEN) sheet. In addition, in the embodiment described below, the explanation will be continued on the assumption that a polyethylene sheet is selected as the thermocompression sheet 20 .

上記したようにウエーハ１０と、熱圧着シート２０とを用意したならば、図１に示すように、ウエーハ１０の表面１０ａに熱圧着シート２０を敷設する。次いで、図２に示す熱圧着装置３０（全体図は省略する。）に搬送する。熱圧着装置３０は、回転軸３４を中心に回転可能に保持された加熱ローラ３２と、図示しない保持テーブルとを備える。加熱ローラ３２の表面にはフッ素樹脂がコーティングされている。加熱ローラ３２の内部には、電気ヒータ及び温度センサが内蔵（図示は省略する。）されており、別途用意される制御装置によって、加熱ローラ３２の表面を所望の温度に調整することができる。加熱ローラ３２は、回転軸３４を中心に回転しながら、平坦に形成された図示しない保持テーブルの保持面に沿って所定方向（矢印で示す。）に移動させることができる。熱圧着装置３０にウエーハ１０を搬送したならば、ウエーハ１０の熱圧着シート２０が敷設された面を上方に向け、図示しない保持テーブルの保持面に載置する。次いで、図２に示すように、ウエーハ１０の表面１０ａに敷設された熱圧着シート２０側を、加熱ローラ３２で押圧しながら加熱し、回転軸３４を中心に加熱ローラ３２を回転させながら、熱圧着シート２０の表面に沿って矢印で示す方向に移動させる。この際、加熱ローラ３２によって、熱圧着シート２０は１２０℃～１４０℃の範囲で加熱される。この温度は、熱圧着シート２０を構成するポリエチレンシートの融点近傍の温度であるが、熱圧着シート２０が過度に溶融しない程度の温度で、且つ、軟化して粘着性を発揮する温度で設定する。このようにすることで、ウエーハ１０の表面１０ａ全体に熱圧着シート２０が熱圧着され、シート配設工程が完了する。 After the wafer 10 and the thermocompression sheet 20 are prepared as described above, the thermocompression sheet 20 is laid on the surface 10a of the wafer 10 as shown in FIG. Then, it is transported to a thermocompression bonding apparatus 30 (overall view is omitted) shown in FIG. The thermocompression bonding device 30 includes a heating roller 32 held rotatably about a rotary shaft 34 and a holding table (not shown). The surface of the heating roller 32 is coated with a fluorine resin. An electric heater and a temperature sensor are incorporated (not shown) inside the heating roller 32, and the surface of the heating roller 32 can be adjusted to a desired temperature by a separately prepared control device. The heating roller 32 can be moved in a predetermined direction (indicated by an arrow) along a flat holding surface of a holding table (not shown) while rotating around a rotating shaft 34 . After the wafer 10 is transported to the thermocompression bonding apparatus 30, the surface of the wafer 10 on which the thermocompression bonding sheet 20 is laid faces upward and is placed on the holding surface of a holding table (not shown). Next, as shown in FIG. 2, the side of the thermocompression bonding sheet 20 laid on the surface 10a of the wafer 10 is heated while being pressed by the heating roller 32, and while the heating roller 32 is rotated about the rotating shaft 34, the heat is applied. It is moved along the surface of the pressure-bonding sheet 20 in the direction indicated by the arrow. At this time, the thermocompression sheet 20 is heated in the range of 120° C. to 140° C. by the heating roller 32 . This temperature is a temperature near the melting point of the polyethylene sheet that constitutes the thermocompression sheet 20, but is set at a temperature that does not excessively melt the thermocompression sheet 20 and at which it softens and exhibits adhesiveness. . By doing so, the thermocompression sheet 20 is thermocompression bonded to the entire surface 10a of the wafer 10, and the sheet arrangement process is completed.

（支持部材配設工程）
上記シート配設工程が完了したならば、図３の上段に示すように、表面に粘着性を有するダイシングテープＴと、ダイシングテープＴを保持する環状のフレームＦとからなる支持部材を用意し、ウエーハ１０の裏面１０ｂ側にダイシングテープＴの中央部を貼着する。これにより、図３の下段に示すように、ウエーハ１０に支持部材が配設された状態となる。 (Supporting member placement process)
After the above sheet arrangement step is completed, as shown in the upper part of FIG. 3, a supporting member comprising a dicing tape T having adhesiveness on its surface and an annular frame F holding the dicing tape T is prepared, A center portion of the dicing tape T is adhered to the back surface 10 b side of the wafer 10 . As a result, as shown in the lower part of FIG. 3, the wafer 10 is provided with the supporting members.

なお、本実施形態では、上記したように、シート配設工程の後に、支持部材配設工程を実施したが、本発明はこれに限定されない。すなわち、シート配設工程を実施する前に、支持部材配設工程を実施することもできる。より具体的には、まず、熱圧着シート２０を熱圧着する前のウエーハ１０の裏面１０ｂにダイシングテープＴを貼着して、環状のフレームＦによってウエーハ１０を支持する支持部材配設工程を実施する。その後、ウエーハ１０の表面１０ａに熱圧着シート２０を敷設し、上記した熱圧着装置３０を用いて、熱圧着シートを加熱してウエーハ１０の表面１０ａに熱圧着するシート配設工程を実施する。これにより、上記した実施形態と同様に、熱圧着シート２０が表面１０ａに熱圧着され、且つダイシングテープＴを介して環状のフレームＦに支持されたウエーハ１０を得ることができる。 In this embodiment, as described above, the supporting member arranging step is performed after the sheet arranging step, but the present invention is not limited to this. That is, the supporting member arranging step can be performed before the seat arranging step is performed. More specifically, first, a dicing tape T is adhered to the back surface 10b of the wafer 10 before the thermocompression bonding sheet 20 is thermocompression bonded, and the support member disposing step is performed to support the wafer 10 by the annular frame F. do. After that, the thermocompression bonding sheet 20 is laid on the surface 10a of the wafer 10, and the thermocompression bonding sheet is heated by using the above-described thermocompression bonding apparatus 30 to be thermocompression bonded to the surface 10a of the wafer 10. As a result, the wafer 10 in which the thermocompression sheet 20 is thermocompression bonded to the surface 10a and the wafer 10 supported by the annular frame F via the dicing tape T can be obtained in the same manner as in the above embodiment.

（分割工程）
上記したように、シート配設工程及び支持部材配設工程が完了したならば、分割すべき領域に分割手段を位置付けて熱圧着シート２０と共にウエーハ１０を個々のチップに分割する分割工程を実施する。分割工程の実施態様について、以下に、図４を参照しながら説明する。 (Dividing process)
As described above, when the sheet arranging process and the supporting member arranging process are completed, the dividing means is positioned in the area to be divided, and the wafer 10 is divided into individual chips together with the thermocompression bonding sheet 20 by performing the dividing process. . An embodiment of the splitting process is described below with reference to FIG.

熱圧着シート２０と共にウエーハ１０を個々のチップに分割する分割工程は、例えば、図４（ａ）に示すダイシング装置４０（一部のみ示す。）によって実現される。
図４（ａ）に示すように、ダイシング装置４０は、スピンドルユニット４１を備えている。スピンドルユニット４１は、回転スピンドル４２の先端部に固定され外周に切り刃を有する切削ブレード４３と、切削ブレード４３を保護するブレードカバー４４とを備えている。切削ブレード４３は、回転スピンドル４２と共に回転可能に構成されている。ブレードカバー４４には、切削ブレード４３に隣接する位置に切削水供給手段４５が配設されており、切削水を切削ブレード４３によるウエーハ１０の切削位置に向けて供給する。切削ブレード４３によって切削を実施する際には、図示しないアライメント手段を用いて、切削ブレード４３と、図示しない保持テーブルに保持されたウエーハ１０の表面１０ａ側に形成された分割予定ライン１４との位置合わせ（アライメント）を行う。該アライメント手段には、少なくとも図示しない赤外線照明手段、及び赤外線撮像手段が備えられ、表面１０ａの分割予定ライン１４を、熱圧着シート２０側から撮像、検出することが可能に構成されている。 The dividing step of dividing the wafer 10 into individual chips together with the thermocompression-bonded sheet 20 is realized, for example, by a dicing device 40 (only a portion of which is shown) shown in FIG. 4(a).
As shown in FIG. 4( a ), the dicing device 40 has a spindle unit 41 . The spindle unit 41 includes a cutting blade 43 fixed to the tip of a rotary spindle 42 and having a cutting edge on the outer circumference, and a blade cover 44 protecting the cutting blade 43 . The cutting blade 43 is configured to be rotatable together with the rotating spindle 42 . The blade cover 44 is provided with cutting water supply means 45 adjacent to the cutting blade 43 to supply cutting water to the cutting position of the wafer 10 by the cutting blade 43 . When performing cutting with the cutting blade 43, alignment means (not shown) is used to determine the positions of the cutting blade 43 and the dividing line 14 formed on the front surface 10a side of the wafer 10 held on a holding table (not shown). Perform alignment. The alignment means includes at least an infrared illuminating means and an infrared imaging means (not shown), and is configured to be capable of imaging and detecting the dividing line 14 of the front surface 10a from the thermocompression sheet 20 side.

該アライメント手段によるアライメントを実施したならば、回転スピンドル４２と共に高速回転させられる切削ブレード４３を、図示しない保持テーブルに保持したウエーハ１０の分割予定ライン１４に対応した位置に位置付けて下降させて切り込ませ、ウエーハ１０を切削ブレード４３に対して矢印Ｘで示すＸ軸方向（加工送り方向）に移動させる。これにより、分割予定ライン１４に沿ってウエーハ１０を切削して分割する分割溝１００を形成する。この分割溝１００は、ウエーハ１０を完全に分割する溝であり、ウエーハ１０と共に熱圧着シート２０も分割する。図示しない移動手段によって、ウエーハ１０を保持する保持テーブルを、Ｘ軸方向、及びＸ軸方向と直交するＹ軸方向に適宜移動させながら、ウエーハ１０の全ての分割予定ライン１４に対し、上記した切削ブレード４３による切削加工を実施する。これにより、図５に示すように、ウエーハ１０の全ての分割予定ライン１４に沿って分割溝１００を形成し、ウエーハ１０を熱圧着シート２０と共に分割する。以上により、分割工程が完了する。 After the alignment is performed by the alignment means, the cutting blade 43, which is rotated at high speed together with the rotating spindle 42, is positioned at a position corresponding to the division line 14 of the wafer 10 held on a holding table (not shown) and lowered to cut. Then, the wafer 10 is moved with respect to the cutting blade 43 in the X-axis direction (processing feed direction) indicated by the arrow X. As a result, dividing grooves 100 for cutting and dividing the wafer 10 along the dividing lines 14 are formed. The dividing groove 100 is a groove that completely divides the wafer 10 and also divides the thermocompression bonding sheet 20 together with the wafer 10 . While the holding table holding the wafer 10 is appropriately moved in the X-axis direction and the Y-axis direction perpendicular to the X-axis direction by a moving means (not shown), all the division lines 14 of the wafer 10 are cut as described above. Cutting is performed by the blade 43 . Thereby, as shown in FIG. 5, dividing grooves 100 are formed along all the dividing lines 14 of the wafer 10 to divide the wafer 10 together with the thermocompression bonding sheet 20 . With the above, the dividing step is completed.

本発明において実施される分割工程は、図４（ａ）に示すダイシング装置４０によって実施することに限定されず、例えば、図４（ｂ）に示すレーザー加工装置５０（一部のみを示す。）を使用して実施することもできる。レーザー加工装置５０によって実施される分割工程について説明する。 The dividing step performed in the present invention is not limited to being performed by the dicing device 40 shown in FIG. 4(a), and for example, the laser processing device 50 shown in FIG. can also be implemented using A division process performed by the laser processing device 50 will be described.

図４（ｂ）に示すように、レーザー加工装置５０は、レーザー光線照射手段５２を備えている。レーザー光線照射手段５２は、図示しないレーザー光線発振器を含む光学系を備え、レーザー光線発振器から発振されたレーザー光線を集光する集光器５２ａを備える。レーザー光線照射手段５２は、ウエーハ１０に対して吸収性を有する波長のレーザー光線を照射しアブレーション加工を実施するようにレーザー加工条件が設定される。レーザー光線照射手段５２によって分割工程を実施する前に、図示しないアライメント手段を用いて、集光器５２ａによって照射されるレーザー光線ＬＢの照射位置と、図示しない保持テーブルに保持されたウエーハ１０の表面１０ａ側に形成された分割予定ライン１４との位置合わせ（アライメント）を行う。該アライメント手段には、図示しない赤外線照明手段及び赤外線撮像手段が備えられ、表面１０ａの分割予定ライン１４を、熱圧着シート２０側から撮像、検出することが可能に構成されている。 As shown in FIG. 4(b), the laser processing device 50 includes laser beam irradiation means 52. As shown in FIG. The laser beam irradiation means 52 includes an optical system including a laser beam oscillator (not shown), and a condenser 52a for collecting the laser beam oscillated from the laser beam oscillator. Laser processing conditions are set so that the laser beam irradiation means 52 irradiates the wafer 10 with a laser beam having a wavelength having an absorptive property to carry out ablation processing. Before performing the dividing step by the laser beam irradiation means 52, alignment means (not shown) is used to align the irradiation position of the laser beam LB irradiated by the condenser 52a and the front surface 10a side of the wafer 10 held by the holding table (not shown). Positioning (alignment) with the planned division line 14 formed in . The alignment means is provided with an infrared illuminating means and an infrared imaging means (not shown), and is configured to be capable of imaging and detecting the dividing line 14 of the front surface 10a from the thermocompression sheet 20 side.

該アライメント手段によるアライメントを実施したならば、集光器５２ａを、図示しない保持テーブルに保持したウエーハ１０の分割予定ライン１４に対応した位置に位置付けて、集光点をウエーハ１０の所定の位置に位置付ける。次いで、レーザー光線照射手段５２を作動すると共に、ウエーハ１０を集光器５２ａに対して矢印Ｘで示すＸ軸方向（加工送り方向）に移動させる。これにより、ウエーハ１０をアブレーション加工して分割するレーザー加工溝１１０を形成する。このレーザー加工溝１１０は、ウエーハ１０を完全に分割する溝であり、ウエーハ１０と共に熱圧着シート２０も分割する。図示しない移動手段によって、ウエーハ１０を保持する保持テーブルを、Ｘ軸方向、及びＸ軸方向と直交するＹ軸方向に適宜移動させながら、上記したレーザー光線照射手段５２によるアブレーション加工を実施する。これにより、ウエーハ１０の全ての分割予定ライン１４に沿ってレーザー加工溝１１０を形成し、ウエーハ１０を熱圧着シート２０と共に分割する。 After the alignment is performed by the alignment means, the light collector 52a is positioned at a position corresponding to the dividing line 14 of the wafer 10 held on a holding table (not shown), and the condensing point is positioned at a predetermined position of the wafer 10. Position. Next, the laser beam irradiation means 52 is operated, and the wafer 10 is moved in the X-axis direction (processing feed direction) indicated by the arrow X with respect to the condenser 52a. As a result, laser-processed grooves 110 for dividing the wafer 10 by ablation are formed. This laser-processed groove 110 is a groove that completely divides the wafer 10 and also divides the thermocompression bonding sheet 20 together with the wafer 10 . While the holding table holding the wafer 10 is appropriately moved in the X-axis direction and the Y-axis direction orthogonal to the X-axis direction by moving means (not shown), the laser beam irradiation means 52 performs the ablation process. As a result, laser processing grooves 110 are formed along all the dividing lines 14 of the wafer 10 , and the wafer 10 is divided together with the thermocompression bonding sheet 20 .

上記したダイシング装置４０、レーザー加工装置５０のいずれによって分割した場合であっても、ウエーハ１０の表面１０ａが、熱圧着シート２０によって保護されていることから、切削屑、又はデブリによってデバイス１２が汚染されることが防止される。 Since the surface 10a of the wafer 10 is protected by the thermocompression bonding sheet 20 regardless of whether the dicing device 40 or the laser processing device 50 described above is used, the device 12 is contaminated with chips or debris. is prevented.

（一体化工程）
上記した分割工程を実施したならば、デバイス１２に対応して個々に分割された熱圧着シート２０を加熱し溶融させて連結し一体化する一体化工程を実施する。この一体化工程について、図６を参照しながらより具体的に説明する。 (Integration process)
After the above-described dividing step is performed, an integration step is performed in which the thermocompression bonding sheets 20 that are individually divided corresponding to the devices 12 are heated, melted, connected and integrated. This integration process will be described more specifically with reference to FIG.

図５において示したように、分割工程によってウエーハ１０と共に熱圧着シート２０もデバイス１２に対応して個々に分割されている。このウエーハ１０を、フレームＦ及びダイシングテープＴからなる支持部材と共に、図６に示す一体化用加熱手段６０の下方に位置付ける。一体化用加熱手段６０は、内部に電気ヒータ、及びファンが内蔵されており、所定の温度の熱風Ｗを下方に向けて噴射するように構成されている。本実施形態では、熱圧着シート２０は、ポリエチレンシートを選択しており、熱圧着シート２０をポリエチレンシートの融点温度を超える１６０℃以上に加熱する。このため、一体化用加熱手段６０から噴射される熱風Ｗの温度は、熱圧着シート２０自体が１６０℃以上になるように設定される（例えば、２００℃）。一体化用加熱手段６０からこのように設定された熱風Ｗを噴射して所定時間だけ加熱することで、熱圧着シート２０が融点以上の温度となって溶融する。すなわち、図６の下段に示すように、先に実施された分割工程によって形成された分割溝１００が熱圧着シート２０の溶融により消滅し連結されて一体化し、再び一枚のシートになる。なお、一体化用加熱手段６０により加熱する温度は高ければ高いほど良いわけではなく、熱圧着シート２０が過剰に溶けてウエーハ１０の外縁からはみ出し、ダイシングテープＴ側に流れ出ない程度の温度に加熱することが好ましい。以上により、一体化工程が完了する。 As shown in FIG. 5, the wafer 10 as well as the thermocompression sheet 20 are individually divided corresponding to the devices 12 by the dividing step. This wafer 10 is positioned below the integration heating means 60 shown in FIG. The heating means 60 for integration incorporates an electric heater and a fan inside, and is configured to blow hot air W at a predetermined temperature downward. In this embodiment, a polyethylene sheet is selected as the thermocompression sheet 20, and the thermocompression sheet 20 is heated to 160° C. or higher, which is higher than the melting point of the polyethylene sheet. Therefore, the temperature of the hot air W jetted from the heating means 60 for integration is set so that the thermocompression bonding sheet 20 itself becomes 160° C. or higher (for example, 200° C.). By injecting hot air W set in this way from the heating means 60 for integration and heating for a predetermined time, the thermocompression bonding sheet 20 reaches a temperature equal to or higher than the melting point and is melted. That is, as shown in the lower part of FIG. 6, the dividing grooves 100 formed in the previously performed dividing step disappear when the thermocompression bonding sheet 20 melts and are connected and integrated into one sheet again. It should be noted that the higher the temperature to be heated by the heating means 60 for integration is not, the better. preferably. With the above, the integration process is completed.

（剥離工程）
上記したように、分割溝１００を消滅させて連結する一体化工程が完了したならば、図７に示すように、一体化された熱圧着シート２０をウエーハ１０の表面１０ａから剥離する剥離工程を実施する。一体化された熱圧着シート２０をウエーハ１０から剥離する具体的な手段は特に限定されないが、熱圧着シート２０上に、剥離用の粘着テープを貼り、該粘着テープと共に、ウエーハ１０から熱圧着シート２０を剥離するようにするとよい。このようにして剥離工程を実施することにより、ダイシングテープＴ上には、ウエーハ１０が、個々のデバイスチップ１２’に分割された状態で表出する。 (Peeling process)
After the integration process of eliminating and connecting the dividing grooves 100 is completed as described above, a peeling process of peeling the integrated thermocompression sheet 20 from the surface 10a of the wafer 10 is performed as shown in FIG. implement. A specific means for peeling the integrated thermocompression bonding sheet 20 from the wafer 10 is not particularly limited, but an adhesive tape for peeling is attached on the thermocompression bonding sheet 20, and the thermocompression bonding sheet is removed from the wafer 10 together with the adhesive tape. 20 should be peeled off. By performing the peeling process in this manner, the wafer 10 is exposed on the dicing tape T in a state of being divided into individual device chips 12'.

以上のようにして剥離工程を実施したならば、ウエーハ１０をダイシングテープＴからデバイスチップ１２’をピックアップするピックアップ工程に搬送するか、ダイシングテープＴ及びフレームＦと共に収容する図示しないカセットケースに搬送して収容する。 After the peeling process has been performed as described above, the wafer 10 is transported from the dicing tape T to the pick-up process for picking up the device chips 12', or transported to a cassette case (not shown) containing the dicing tape T and the frame F. to accommodate.

なお、上記した実施形態では、熱圧着シート２０をポリエチレンシートとしたが、本発明はこれに限定されず、ポリオレフィン系のシート、又はポリエステル系のシートから適宜選択することができる。 In the above-described embodiment, the thermocompression-bonding sheet 20 is a polyethylene sheet, but the present invention is not limited to this, and can be appropriately selected from polyolefin-based sheets and polyester-based sheets.

熱圧着シート２０を、ポリオレフィン系のシートから選択する場合、具体的には、ポリエチレンシートの他に、ポリプロピレンシート、ポリスチレンシートのいずれかから選択することができる。 When the thermocompression-bonding sheet 20 is selected from polyolefin sheets, specifically, it can be selected from either a polypropylene sheet or a polystyrene sheet in addition to a polyethylene sheet.

熱圧着シート２０として、ポリプロピレンシートを選択した場合は、シート配設工程において加熱する際の温度を１６０℃～１８０℃とし、一体化工程において加熱する際の温度を２００℃以上とすることが好ましい。また、熱圧着シート２０として、ポリスチレンシートを選択した場合は、シート配設工程において加熱する際の温度を２２０℃～２４０℃とし、一体化工程において加熱する際の温度を２６０℃以上とすることが好ましい。 When a polypropylene sheet is selected as the thermocompression-bonding sheet 20, it is preferable that the heating temperature in the sheet arrangement step is 160° C. to 180° C., and the heating temperature in the integration step is 200° C. or higher. . When a polystyrene sheet is selected as the thermocompression bonding sheet 20, the heating temperature in the sheet disposing process should be 220° C. to 240° C., and the heating temperature in the integration process should be 260° C. or higher. is preferred.

熱圧着シート２０を、ポリエステル系のシートとする場合、具体的には、ポリエチレンテレフタレートシート、又はポリエチレンナフタレートシートから選択することができる。 When the thermocompression-bonding sheet 20 is a polyester-based sheet, specifically, it can be selected from a polyethylene terephthalate sheet and a polyethylene naphthalate sheet.

熱圧着シート２０として、ポリエチレンテレフタレートシートを選択した場合は、シート配設工程において加熱する際の温度を２５０℃～２７０℃とし、一体化工程において加熱する際の温度を２９０℃以上とすることが好ましい。また、熱圧着シート２０として、ポリエチレンナフタレートシートを選択した場合は、シート配設工程において加熱する際の温度を１６０℃～１８０℃とし、一体化工程において加熱する際の温度を２００℃以上とすることが好ましい。 When a polyethylene terephthalate sheet is selected as the thermocompression-bonding sheet 20, the heating temperature in the sheet disposing process may be 250° C. to 270° C., and the heating temperature in the integrating process may be 290° C. or higher. preferable. Further, when a polyethylene naphthalate sheet is selected as the thermocompression bonding sheet 20, the heating temperature in the sheet disposing process is set to 160° C. to 180° C., and the heating temperature in the integrating process is set to 200° C. or higher. preferably.

上記した実施形態では、加工の対象となる板状物を、円盤形状の複数のデバイス１２が分割予定ライン１４によって区画され表面１０ａに形成されたウエーハ１０としたが、本発明はこれに限定されず、複数のＣＳＰが分割予定ラインによって区画され表面に形成された矩形状のＣＳＰ基板であってもよい。 In the above-described embodiment, the plate-like object to be processed is the wafer 10 on which a plurality of disk-shaped devices 12 are divided by the dividing lines 14 and formed on the surface 10a, but the present invention is not limited to this. Instead, it may be a rectangular CSP substrate on which a plurality of CSPs are partitioned by dividing lines and formed on the surface.

１０：ウエーハ
１２：デバイス
１２’：デバイスチップ
１４：分割予定ライン
２０：熱圧着シート
３０：熱圧着装置
３２：加熱ローラ
４０：ダイシング装置
４３：切削ブレード
５０：レーザー加工装置
５２：レーザー光線照射手段
５２ａ：集光器
６０：一体化用加熱手段
Ｆ：フレーム
Ｔ：ダイシングテープ 10: Wafer 12: Device 12': Device chip 14: Dividing line 20: Thermocompression sheet 30: Thermocompression device 32: Heating roller 40: Dicing device 43: Cutting blade 50: Laser processing device 52: Laser beam irradiation means 52a: Light collector 60: Heating means for integration F: Frame T: Dicing tape

Claims (8)

板状の被加工物を個々のチップに分割する板状物加工方法であって、
被加工物の裏面に支持部材を配設する支持部材配設工程と、
該支持部材配設工程の前、又は後に被加工物の表面に熱圧着シートを敷設し加熱して熱圧着するシート配設工程と、
分割すべき領域に分割手段を位置付けて該熱圧着シートと共に被加工物を個々のチップに分割する分割工程と、
個々のチップに対応して分割された熱圧着シートを加熱し溶融させ分割工程において分割された熱圧着シートを連結して一体化する一体化工程と、
一体化した熱圧着シートを被加工物から剥離する剥離工程と、
から少なくとも構成される板状物加工方法。 A plate-shaped workpiece processing method for dividing a plate-shaped workpiece into individual chips,
a support member disposing step of disposing the support member on the back surface of the workpiece;
Before or after the supporting member arranging step, a sheet arranging step of laying a thermocompression bonding sheet on the surface of the workpiece and heating and thermocompression bonding;
a dividing step of positioning a dividing means in a region to be divided and dividing the workpiece together with the thermocompression sheet into individual chips;
an integration step of heating and melting the thermocompression-bonded sheets divided corresponding to individual chips and connecting and integrating the thermocompression-bonded sheets divided in the dividing step;
A peeling step of peeling the integrated thermocompression sheet from the workpiece;
A plate-shaped object processing method comprising at least: 該分割工程は、外周に切り刃を有する切削ブレードを回転可能に備えた切削手段、又は、レーザー光線を照射して被加工物にアブレーション加工を施すレーザー光線照射手段のいずれかである請求項１に記載の板状物加工方法。 2. The dividing step is according to claim 1, wherein the cutting means comprises a rotatable cutting blade having a cutting edge on its outer circumference, or the laser beam irradiation means irradiates a laser beam to ablate the workpiece. plate-shaped object processing method. 被加工物は、複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハである請求項１、又は２に記載の板状物加工方法。 3. The method of processing a plate-shaped object according to claim 1, wherein the object to be processed is a wafer having a plurality of devices partitioned by dividing lines and formed on the surface thereof. 該熱圧着シートは、ポリオレフィン系のシート、又はポリエステル系のシートから選択される請求項１乃至３のいずれかに記載の板状物加工方法。 4. The method of processing a plate-like object according to claim 1, wherein the thermocompression-bonded sheet is selected from a polyolefin-based sheet and a polyester-based sheet. 該ポリオレフィン系のシートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかから選択される請求項４に記載の板状物加工方法。 5. The method of processing a plate-like object according to claim 4, wherein the polyolefin-based sheet is selected from any one of a polyethylene sheet, a polypropylene sheet and a polystyrene sheet. 該シート配設工程において、ポリオレフィン系のシートから選択される熱圧着シートが、ポリエチレンシートである場合の加熱温度は１２０℃～１４０℃であり、ポリプロピレンシートである場合の加熱温度は１６０℃～１８０℃であり、ポリスチレンシートである場合の加熱温度は、２２０℃～２４０℃であり、
該一体化工程において、該熱圧着シートが、ポリエチレンシートである場合の加熱温度は１６０℃以上であり、ポリプロピレンシートである場合の加熱温度は２００℃以上であり、ポリスチレンシートである場合の加熱温度は２６０℃以上である請求項５に記載の板状物加工方法。 In the sheet arrangement step, the heating temperature is 120° C. to 140° C. when the thermocompression bonding sheet selected from polyolefin sheets is a polyethylene sheet, and the heating temperature is 160° C. to 180° C. when it is a polypropylene sheet. ° C., and the heating temperature in the case of a polystyrene sheet is 220 ° C. to 240 ° C.,
In the integration step, the heating temperature is 160 ° C. or higher when the thermocompression sheet is a polyethylene sheet, the heating temperature is 200 ° C. or higher when it is a polypropylene sheet, and the heating temperature when it is a polystyrene sheet. is 260° C. or higher. 該ポリエステル系シートは、ポリエチレンテレフタレートシート、又はポリエチレンナフタレートシートから選択される請求項４に記載の板状物加工方法。 5. The method of processing a plate-like object according to claim 4, wherein the polyester sheet is selected from a polyethylene terephthalate sheet and a polyethylene naphthalate sheet. 該シート配設工程において、ポリエステル系のシートから選択される熱圧着シートが、ポリエチレンテレフタレートシートである場合の加熱温度は２５０℃～２７０℃であり、ポリエチレンナフタレートシートである場合の加熱温度は１６０℃～１８０℃であり、
該一体化工程において、該熱圧着シートが、ポリエチレンテレフタレートシートである場合の加熱温度は２９０℃以上であり、ポリエチレンナフタレートシートである場合の加熱温度は２００℃以上である請求項７に記載の板状物加工方法。 In the sheet arrangement step, the heating temperature is 250° C. to 270° C. when the thermocompression bonding sheet selected from polyester sheets is a polyethylene terephthalate sheet, and the heating temperature is 160° C. when it is a polyethylene naphthalate sheet. ° C to 180 ° C,
8. The method according to claim 7, wherein in the integration step, the heating temperature is 290° C. or higher when the thermocompression bonding sheet is a polyethylene terephthalate sheet, and the heating temperature is 200° C. or higher when it is a polyethylene naphthalate sheet. Plate-shaped object processing method.
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