JP7101299B2 - Memory plate segmentation to reduce operating power - Google Patents

Description

Cross-reference This patent application claims priority to PCT application No. PCT / US2018 / 042875, filed on July 19, 2018, entitled "Memory Plate Division to Distribution Operating Power" by Kim et al. PCT Application No. PCT / US2018 / 042875 is a US Patent Application No. 15 / 655,675, filed on July 20, 2018, entitled "Memory Plate Priority to Distribution Operating Power" by Kim et al. Each of these applications is transferred to the transferee of the invention and is expressly incorporated herein by reference in its entirety.

The following relates generally to memory devices, and more particularly to electronic memory devices containing multiple plate portions separated by multiple segmentation lines, and how to use them.

Memory devices are widely used to store information in a variety of electronic devices such as computers, wireless communication devices, cameras, and digital displays. Information is stored by programming different states of the memory device. For example, a binary device often has two states, indicated by logic "1" or logic "0". In other systems, more than one state may be stored. To access the stored information, the electronic device may read or sense the state stored in the memory device. To store information, electronic devices may write or program state in memory devices.

Random access memory (RAM), read-only memory (ROM), dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), strong dielectric RAM (FeRAM), magnetic RAM (MRAM), resistance RAM (RRAM), There are various types of memory devices, including flash memory and so on. The memory device may be volatile or non-volatile. Non-volatile memory, such as flash memory, can store data over an extended period of time, even in the absence of an external power source. Volatile memory devices, such as DRAMs, may lose their stored state over time unless they are periodically refreshed by an external power source. Binary memory devices may include, for example, charged or discharged capacitors. However, the charged capacitor may be discharged over time through a leak current, resulting in the loss of stored information.

The advantages of non-volatile memory over volatile memory can be further increased if power consumption can be reduced. Operating some non-volatile memory, such as FeRAM, may include energizing some components to facilitate access operations. Limiting the size of such components, or limiting the frequency at which such components are energized, may help reduce power consumption.

Disclosures herein refer to and include the following figures.

FIG. 3 illustrates an exemplary memory array using memory plate segmentation according to various embodiments of the present disclosure. FIG. 3 illustrates an exemplary circuit of a memory cell in a device using memory plate segmentation according to various embodiments of the present disclosure. It is an exemplary hysteresis plot for a ferroelectric memory cell in a device using memory plate segmentation according to various embodiments of the present disclosure. FIG. 3 illustrates an exemplary memory array using memory plate segmentation according to various embodiments of the present disclosure. It is an exemplary timing diagram for a memory array using memory plate segmentation according to the various embodiments of the present disclosure. FIG. 3 illustrates an exemplary memory array using memory plate segmentation according to various embodiments of the present disclosure. FIG. 3 illustrates an exemplary memory array using memory plate segmentation according to various embodiments of the present disclosure. It is a diagram showing an exemplary circuit in a memory array using memory plate segmentation according to the various embodiments of the present disclosure. FIG. 3 illustrates exemplary memory controllers that support operation for devices with memory plate segmentation according to the various embodiments of the present disclosure. FIG. 3 illustrates a system comprising an electronic memory device using memory plate segmentation according to various embodiments of the present disclosure. It is a figure which shows the method for operating the device which used the memory plate segmentation by embodiment of this disclosure. It is a figure which shows the method for operating the device which used the memory plate segmentation by embodiment of this disclosure. It is a figure which shows the method for operating the device which used the memory plate segmentation by embodiment of this disclosure. It is a figure which shows the method for operating the device which used the memory plate segmentation by embodiment of this disclosure.

A memory array with a ferroelectric cell can have a segmented plate, which means that the subsections or parts of the plate are energized to access the cells associated with those parts. May be possible. This may allow the portion of the plate associated with the inaccessible cell to remain isolated (ie, unenergized) and therefore power compared to a device with a single plate. May reduce or reduce consumption.

As an example, a memory device may consume a certain amount of power when the plate is activated to facilitate cell access (eg, reading from or writing to it). Power consumption for plate activation is increased by parasitic capacitance, for example, between the digit line and the word line, between the word line and the memory cell, and between the digit line and the memory cell. May be done. Parasitic capacitance can grow each memory cell bound to an activated memory plate, which is considerable when a large number of memory cells are bound to an activated memory plate. May result in power consumption.

To reduce the total parasitic capacitance and thus power consumption of the electronic memory cell, the electronic memory cell may include multiple memory plate portions separated by multiple segmentation lines. The at least one memory cell may be disposed on each of the plurality of memory plate portions and may be coupled to the sensing component via one of the plurality of digit lines. The memory cell may be, for example, a ferroelectric memory cell. Electronic memory cells may also include plate driver components that include multiple plate drivers, each plate driver being connected by a plate wire to at least one of the plurality of memory plate portions.

In some examples, the plurality of segmentation lines includes a first set of segmentation lines that are parallel to the plurality of digit lines. In some other examples, the plurality of segmentation lines are a first set of segmentation lines extending in a first direction and a second set of segmentation lines extending in a second direction perpendicular to the first direction. And include. Segmentation lines, as used herein, may refer to physical breaks or discontinuities between portions of the plate. These may or may not be lines.

In some examples, each plate driver may be coupled to a single memory plate portion. In some other examples, each plate driver may be coupled to two or more memory plate portions. The plate driver may activate one or more of the memory plate portions so that information can be written to or read from a memory cell connected to the memory plate portion.

The features of the present disclosure introduced above are further described below in the context of memory arrays. Specific examples of the configuration and operation of electronic memory devices that use or support memory plate segmentation to reduce operating power will then be described. These and other features of the present disclosure are further illustrated and described with reference to device diagrams, system diagrams, and flowcharts associated with memory plate segmentation.

FIG. 1 illustrates an exemplary memory array 100 with memory plate segmentation according to various embodiments of the present disclosure. The memory array 100 is sometimes referred to as an electronic memory device. The memory array 100 includes memory cells 105 that are programmable to store different states. Each memory cell 105 may be programmable to store two states, designated logic 0 and logic 1. In some cases, memory cell 105 is configured to store three or more logical states.

The memory cell 105 may include a capacitor to store a charge that represents a programmable state. For example, a charged capacitor and an uncharged capacitor may each represent two logical states. The memory cell 105 may include a capacitor with a ferroelectric material. Ferroelectric materials have spontaneous electrical polarization. That is, the ferroelectric material has non-zero polarization in the absence of an electric field. Different levels of charge on a ferroelectric capacitor can represent different logical states. Some details and advantages of the ferroelectric memory cell 105 are described below.

Operations such as read and write may be performed on memory cell 105 by activating or selecting the appropriate access lines 110 and digit lines 115. The access line 110 may also be referred to as a word line 110, and the digit line 115 may also be referred to as a bit line 115. Activating or selecting a word line 110 or a digit line 115 may include applying a voltage to each line. The word wire 110 and the digit wire 115 are made of a conductive material. For example, the word wire 110 and the digit wire 115 may be made of metal (copper, aluminum, gold, tungsten, etc.), metal alloys, other conductive materials, and the like. According to the example of FIG. 1, each row of memory cell 105 is connected to a single word line 110 and each column of memory cell 105 is connected to a single digit line 115. By activating one word line 110 and one digit line 115 (eg, applying a voltage to the word line 110 or digit line 115), a single memory cell 105 is accessed at their intersection. obtain. Accessing memory cell 105 may include reading or writing memory cell 105. The intersection of the word line 110 and the digit line 115 is sometimes referred to as the address of the memory cell. In some examples, the memory cell 105 may be coupled to other lines in addition to the word line 110 and the digit line 115. For example, memory cell 105 may be coupled to a plate line (not shown). The use and connection of plate wires will be described below.

In some architectures, the cell's logical storage device, such as a capacitor, may be electrically isolated from the digit wire by a selection component. The word line 110 may be connected to and may control a selection component. For example, the selection component may be a transistor and the word line 110 may be connected to the gate of the transistor. Activating the word wire 110 results in an electrical connection or circuit between the capacitor in memory cell 105 and its corresponding digit wire 115. The digit line may then be accessed for either reading or writing memory cell 105.

Access to memory cell 105 can be controlled through row decoder 120 and column decoder 130. In some examples, the row decoder 120 receives the row address from the memory controller 140 and activates the appropriate word line 110 based on the received row address. Similarly, the column decoder 130 receives the column address from the memory controller 140 and activates the appropriate digit line 115. For example, the memory array 100 may include a plurality of word lines 110 labeled WL_1 to WL_M and a plurality of digit lines 115 labeled DL_1 to DL_N, where M and N are arrays. Depends on size. Therefore, by activating word lines 110 and digit lines 115, such as WL_2 and DL_3, memory cells 105 at their intersections can be accessed.

The plate may be under the array of cells 105, for example, as shown in FIGS. 4 and 6. The plate may be segmented in a plane parallel to the word line 110 and / or the digit line 115. Each cell may be bound to a portion of the plate, and the plate or portion of the plate may be activated or energized to access the cell to which that portion is bound. As described herein, memory plate segmentation can avoid parasitic capacitance and thus reduce power consumption.

Upon access, the memory cell 105 may be read or sensed by the sensing component 125 to determine the stored state of the memory cell 105. For example, after accessing memory cell 105, the ferroelectric capacitor in memory cell 105 may discharge onto its corresponding digit line 115. Discharging a ferroelectric capacitor may be based on biasing or applying a voltage to the ferroelectric capacitor. The discharge can induce a change in the voltage of the digit wire 115, the sensing component 125 being comparable to a reference voltage (not shown) to determine the stored state of the memory cell 105. For example, if the digit line 115 has a voltage higher than the reference voltage, the sensing component 125 determines that the stored state in memory cell 105 was logic 1 and vice versa. I have something to do. Sensing component 125 may include various transistors or amplifiers for detecting and amplifying signal differences, which may be referred to as latching. The detected logical state of the memory cell 105 may then be output as output 135 through the column decoder 130.

The memory cell 105 may be set or written by activating the associated word line 110 and digit line 115. As discussed above, activation of the word line 110 causes the corresponding rows of memory cells 105 to be electrically connected to their respective digit lines 115. The memory cell 105 may be written by controlling the associated digit line 115 while the word line 110 is activated. That is, the logical value may be stored in the memory cell 105. The column decoder 130 may accept data, such as input 135, for being written to memory cell 105. The ferroelectric memory cell 105 may be written by applying a voltage across the ferroelectric capacitor. This process is described in more detail below.

In some memory architectures, accessing memory cell 105 can degrade or destroy the stored logical state, because a rewrite or refresh operation returns the original logical state to memory cell 105. May be executed. In a DRAM, for example, the capacitor may be partially or completely discharged during the sensing operation, impairing the stored logic state. Therefore, the logical state may be written again after the sensing operation. In addition, activating a single word line 110 can result in the discharge of all memory cells in a row. Therefore, some or all memory cells 105 in a row may need to be rewritten.

Some memory architectures, including DRAMs, may lose their stored state over time unless they are periodically refreshed by an external power source. For example, a charged capacitor may be discharged over time through a leak current, resulting in the loss of stored information. The refresh rate of these so-called volatile memory devices can be relatively high, for example, in the case of a DRAM array, a refresh operation of tens of seconds per second can result in significant power consumption. With larger and larger memory arrays, the increased power consumption is the deployment or operation of memory arrays (eg, power supply, heat generation, materials), especially for mobile devices that rely on finite power sources such as batteries. (Restrictions, etc.) may be hindered. As discussed below, the ferroelectric memory cell 105 may have beneficial properties that can result in improved performance compared to other memory architectures.

The memory controller 140 controls the operation of memory cells 105 (eg, read, write, rewrite, refresh, etc.) through various components such as row decoder 120, column decoder 130, and sensing component 125. There is. The memory controller 140 may generate row and column address signals to activate the desired word line 110 and digit line 115. The memory controller 140 may also generate and control various potentials used during the operation of the memory array 100. In general, the amplitude, shape, or duration of the applied voltage discussed herein may be tuned or varied and may differ for different operations for operating the memory array 100. Moreover, one, more than one, or all of the memory cells 105 in the memory array 100 may be accessed at the same time. For example, multiple or all cells in memory array 100 may be accessed simultaneously during a reset operation in which all memory cells 105, or groups of memory cells 105, are set to a single logical state. ..

FIG. 2 illustrates an exemplary circuit 200 including memory cell 105, which memory cell 105 may be a component of a device using memory plate segmentation according to various embodiments of the present disclosure. .. The circuit 200 includes memory cells 105-a, word lines 110-a, digit lines 115-a, and sensing components 125-a, each of which will be described with reference to FIG. It may be an example of a memory cell 105, a word line 110, a digit line 115, and a sensing component 125. The memory cell 105-a may include a logical storage component such as a capacitor 205 having a first plate or cell plate 230 and a second plate or cell bottom 215. The cell plate 230 and the cell bottom 215 may be capacitively coupled through a ferroelectric material placed between them. The directions of the cell plate 230 and the cell bottom 215 may be inverted without changing the behavior of the memory cells 105-a. Circuit 200 also includes a selection component 220 and a reference signal 225. In the example of FIG. 2, the cell plate 230 may be accessed via the plate wire 210 and the cell bottom 215 may be accessed via the digit wire 115-a. As described above, various states can be stored by charging or discharging the capacitor 205.

The stored state of the capacitor 205 may be read or sensed by operating various elements represented within the circuit 200. The capacitor 205 may electronically communicate with the Digit wire 115-a. For example, the capacitor 205 can be isolated from the digit wire 115-a when the selective component 220 is deactivated, and the capacitor 205 is connected to the digit wire 115-a when the selective component 220 is activated. It is possible to connect. Activating the selection component 220 is sometimes referred to as selecting memory cells 105-a. In some cases, the selection component 220 is a transistor whose operation is controlled by applying a voltage to the transistor gate, the magnitude of which is greater than the magnitude of the transistor threshold. The word line 110-a may activate the selection component 220. For example, the voltage applied to the word line 110-a is applied to the transistor gate to connect the capacitor 205 to the digit line 115-a. In an alternative embodiment, the location of the selection component 220 and the capacitor 205 is such that the selection component 220 is connected between the plate wire 210 and the cell plate 230, and the capacitor 205 is selected with the digit wire 115-a. It may be replaced so that it is between the other terminals of the component 220. In this embodiment, the selective component 220 may remain in electronic communication with the digit line 115-a through the capacitor 205. This configuration may be associated with alternative timing and bias for read and write operations.

Due to the ferroelectric material between the plates of the capacitor 205, and as discussed in more detail below, the capacitor 205 may not discharge when connected to the digit wire 115-a. In one scheme, the word line 110-a may be biased to select memory cells 105-a in order to sense the logical state stored by the ferroelectric capacitor 205, and the voltage may be It may be applied to the plate wire 210. In some cases, the digit wire 115-a is virtually grounded and then isolated from the virtual ground (ie, "floating"), after which the plate wire 210 and the word wire 110-a are biased. Biasing the plate wire 210 can cause a voltage difference across the capacitor 205 (eg, plate wire 210 voltage minus digit wire 115-a voltage). The voltage difference may result in a change in the charge stored on the capacitor 205, and the magnitude of this change in the stored charge is the initial state of the capacitor 205. For example, it may depend on whether the stored initial state is logic 1 or logic 0. This may induce a change in the voltage of the digit lines 115-a based on the charge stored on the capacitor 205. The operation of the memory cell 105-a by changing the voltage to the cell plate 230 is sometimes referred to as "moving the cell plate".

The change in the voltage of the digit line 115-a may depend on its intrinsic capacitance. That is, when the charge flows through the digit line 115-a, some finite charge may be stored in the digit line 115-a, and the resulting voltage depends on the intrinsic capacitance. The intrinsic capacitance may depend on the physical properties of the digit wire 115-a, including dimensions. The digit line 115-a may connect a large number of memory cells 105, so that the digit line 115-a results in a non-negligible capacity (eg, picofarad (pF) or femtofarad (fF)). May have a length of The resulting voltage of the digit line 115-a is then referenced by the sensing component 125-a (eg, the voltage of the reference signal 225 line) to determine the stored logical state in memory cells 105-a. ) May be compared.

Sensing component 125-a may include various transistors or amplifiers for detecting and amplifying signal differences, which may be referred to as latching. The sensing component 125-a may include a sensing amplifier that receives and compares the voltage of the digit line 115-a and the reference signal 225, and the voltage of the reference signal 225 may be the reference voltage. The sensing amplifier output may be driven to a higher (eg, positive) or lower (eg, negative or ground) supply voltage based on comparison. For example, if the digit line 115-a has a voltage higher than the reference signal 225, the sensing amplifier output may be driven to a positive supply voltage. In some cases, the sensing amplifier may additionally drive the digit line 115-a to the supply voltage. The sensing component 125-a may then latch the output of the sensing amplifier and / or the voltage of the digit line 115-a, which is a stored state in memory cell 105-a, eg, logic. May be used to determine 1. Alternatively, if the digit line 115-a has a voltage lower than the reference signal 225, the sensing amplifier output may be driven to a negative voltage or ground voltage. Similarly, the sensing component 125-a may latch the sensing amplifier output to determine a stored state, eg, logic 0, in memory cells 105-a. The latched logical state of memory cell 105 may then be output as output 135 through the column decoder 130, with reference to FIG.

A voltage may be applied across the capacitor 205 to write memory cells 105-a. Various methods may be used. In one example, the selection component 220 may be activated through the word line 110-a to electrically connect the capacitor 205 to the digit line 115-a. A voltage may be applied across the capacitor 205 by controlling the voltage of the cell plate 230 (through the plate wire 210) and the cell bottom 215 (through the digit wire 115-a). To write logic 0, the cell plate 230 may be considered high, i.e. a positive voltage may be applied to the plate wire 210, and the cell bottom 215 may be considered low. For example, the digit wire 115-a may be virtually grounded or a negative voltage may be applied to the digit wire 115-a. The reverse process is performed to write logic 1, the cell plate 230 is considered low and the cell bottom 215 is considered high.

3A and 3B, together with the hysteresis curves 300-a (FIG. 3A) and 300-b (FIG. 3B) for memory cells in the device using memory plate segmentation according to the various embodiments of the present disclosure. An example of non-linear electrical properties is illustrated. Hysteresis curves 300-a and 300-b illustrate exemplary ferroelectric memory cell write and read processes, respectively. The hysteresis curve 300 shows the charge Q stored on the ferroelectric capacitor (eg, capacitor 205 in FIG. 2) as a function of the voltage difference V.

The non-linear properties described with reference to FIG. 3 may result in the useful non-volatile memory properties described herein. However, operating a ferroelectric cell with such properties may involve considerations related to energizing the plate, parasitic capacitance, and the like. Therefore, when operating a ferroelectric cell, the characteristics of the cell (examples of which are described with reference to FIG. 3) and such operation of segmented or non-segmented plates are possible. Both of the characteristics of the circuit components to be used may be considered.

Ferroelectric materials are characterized by spontaneous electrical polarization, i.e., maintaining non-zero electrical polarization in the absence of an electric field. Exemplary ferroelectric materials include barium titanate (BaTIO ₃ ), lead titanate (PbTiO ₃ ), lead zirconate titanate (PZT), and strontium bismuth tantanate (SBT). The ferroelectric capacitors described herein may include these or other ferroelectric materials. Electrical polarization within a ferroelectric capacitor results in a net charge on the surface of the ferroelectric material, attracting the opposite charge through the capacitor terminals. Therefore, the charge is stored at the interface between the ferroelectric material and the capacitor terminals. Since electrical polarization can be maintained for a relatively long time, even indefinitely, in the absence of an externally applied electric field, charge leakage is significant compared to, for example, capacitors used in DRAM arrays. May be reduced. This may reduce the need to perform the refresh operations described above for some DRAM architectures.

The hysteresis curve 300 can be understood in terms of a single terminal of the capacitor. As an example, if the ferroelectric material has a negative polarization, a positive charge will accumulate at the terminal. Similarly, if the ferroelectric material has a positive polarization, negative charges will accumulate at the terminals. In addition, it should be understood that the voltage in the hysteresis curve 300 represents the voltage difference across the capacitor and is directional. For example, a positive voltage applies a positive voltage to the terminal in question (eg, cell plate 230) and grounds a second terminal (eg, cell bottom 215) (or about zero volt (0V)). It can be achieved by maintaining. A negative voltage can be applied by keeping the terminal in question grounded and applying a positive voltage to the second terminal. That is, a positive voltage can be applied to negatively polarize the terminal in question. Similarly, two positive voltages, two negative voltages, or any combination of positive and negative voltages can be applied to the appropriate capacitor terminals to generate the voltage difference shown in the hysteresis curve 300. ..

As shown in the hysteresis curve 300-a, the ferroelectric material maintains positive or negative polarization at zero voltage difference and is referred to as two possible charged states: charge state 305 and charge state 310. May result. According to the example of FIG. 3, the charge state 305 represents logic 0 and the charge state 310 represents logic 1. In some examples, the logical value of each charge state may be reversed to accommodate other schemes for operating memory cells.

Logic 0 or 1 may be written to a memory cell by applying a voltage to control the electrical polarization of the ferroelectric material, and thus the charge on the capacitor terminals. For example, applying a net positive voltage 315 onto the capacitor results in charge accumulation until the charge state 305-a is reached. When the voltage 315 is removed, the charge state 305-a follows the path 320 until it reaches the charge state 305 at zero voltage. Similarly, the charge state 310 is written by applying a net negative voltage 325, which results in a charge state 310-a. After removing the negative voltage 325, the charge state 310-a follows the path 330 until it reaches the charge state 310 at zero voltage. The charge states 305 and 310 are sometimes referred to as residual polarization (Pr) values, i.e., residual polarization (or charge) when removing external bias (eg, voltage). The coercive voltage is a voltage at which the charge (or polarization) is zero.

A voltage may be applied across the capacitor to read or sense the stored state of the ferroelectric capacitor. In response, the stored charge Q changes, and the degree of change depends on the initial charge state. That is, the final stored charge (Q) depends on whether the charge state 305-b was first stored or the charge state 310-b was first stored. For example, the hysteresis curve 300-b illustrates two possible stored charge states 305-b and 310-b. A voltage 335 may be applied across the capacitor, as discussed with reference to FIG. Although shown as a positive voltage, the voltage 335 can be negative. In response to voltage 335, charge state 305-b may follow path 340. Similarly, if the charge state 310-b is first stored, the charge state 310-b follows path 345. The final position of the charge states 305-c and 310-c depends on several factors, including the specific sensing scheme and circuit.

In some cases, the final charge may depend on the intrinsic capacity of the digit lines connected to the memory cells. For example, if a capacitor is electrically connected to a digit wire and a voltage of 335 is applied, the voltage of the digit wire may rise due to its inherent capacitance. Therefore, the voltage measured in the sensing component may not be equal to the voltage 335 and instead may depend on the voltage of the digit line. Therefore, the positions of the final charge states 305-c and 310-c on the hysteresis curve 300-b may depend on the capacitance of the digit lines and may be determined through load line analysis. That is, the charge states 305-c and 310-c may be defined with reference to the digit line capacitance. As a result, the voltage, voltage 350, or voltage 355 of the capacitor may be different and may depend on the initial state of the capacitor.

The initial state of the capacitor may be determined by comparing the digit line voltage with the reference voltage. The digit line voltage may be the difference between the voltage 335 and the final voltage, voltage 350, or voltage 355 across the capacitor, ie (voltage 335-voltage 350) or (voltage 335-voltage 355). The reference voltage is used to determine the stored logic state, that is, when the digit line voltage is higher or lower than the reference voltage, its magnitude is between the two possible digits of the two possible digit line voltages. May be generated to be the difference between. For example, the reference voltage may be the average of two quantities, namely (voltage 335-voltage 350) and (voltage 335-voltage 355). When compared by the sensing component, the sensed digit line voltage may be determined to be higher or lower than the reference voltage and the stored logic value of the ferroelectric memory cell (ie, logic 0 or 1). ) Can be determined.

As discussed above, reading a memory cell that does not use a ferroelectric capacitor can degrade or destroy the stored logic state. However, ferroelectric memory cells may maintain their initial logical state after a read operation. For example, if the charge state 305-b is stored, the charge state may follow the path 340 to the charge state 305-c during the read operation, and after removing the voltage 335, the charge state follows the path 340. Tracing in the opposite direction may return to the initial charge state 305-b.

FIG. 4 illustrates an exemplary memory array 400 using memory plate segmentation according to various embodiments of the present disclosure. The memory array 400 may include a plurality of plate portions 405 separated by a plurality of segmentation lines 410. The segmentation line 410 may extend in the first direction in some embodiments. In some cases, the first direction may be vertical. Each of the plurality of plate portions 405 can include a plurality of memory cells, the plurality of memory cells being described with reference to memory cell 105 or FIG. 2, which is described with reference to FIG. It may be an example of an embodiment of the memory cell 105-a. Each of the memory cells may be accessed by applying a voltage to the word line (not shown) and the digit line 415, as described with reference to FIG. The word line and the digit line 415 may be examples of the word line 110 and the digit line 115 described with reference to FIG. Although FIG. 4 shows a single line coupled to each plate portion 405, one of ordinary skill in the art may appreciate that each plate portion 405 may be coupled to multiple digit lines 415, thus each line may be plural. You will understand that it may represent a digit line of. For example, in some examples, each plate portion 405 may have 256 digit lines 415 coupled to it.

Each of the plurality of plate portions 405 may be activated by the plate driver component 420. The plate driver component 420 may include a plurality of plate drivers 425, each plate driver 425 being configured to activate one of the plurality of plate portions 405. Each of the plate drivers 425 may be connected to the plate portion 405 via a plate wire 430. The plate wire 430 may be an example of an embodiment of the plate wire 210 described with reference to FIG. The plate driver 425 may activate the plate portion 405 by applying a voltage to the corresponding plate wire 430. In some cases, the plate driver component 420 may be installed in a different position of the possible positions with respect to the sensing component 445, the column decoder 440, or both. In some embodiments, the plate driver component 420 may be installed as shown in FIG. In some other embodiments, the plate driver component 420 may be installed on the same side of the memory array 400 as the sensing component 445 and / or the column decoder 440. In some other embodiments, the plate driver component 420 may be installed on the opposite side of the memory array 400 from the sensing component 445 and / or the column decoder 440.

The memory array 400 may include several additional components, including a memory controller 435, row decoder (not shown), column decoder 440, and sensing component 445. The memory controller 435, row decoder, column decoder 440, and sensing component 445, respectively, are embodiments of the memory controller 140, row decoder 120, column decoder 130, and sensing component 125, respectively described with reference to FIG. May be an example of. In some examples, the sensing component 125 may include a multiplexer coupled to multiple sensitivity amplifiers to select a digit line 415 from the selected plate portion 405.

When information can be read from or written to the memory array, the memory controller 435 may identify the target memory cell from multiple memory cells in the memory array 400. .. The target memory cell may be, for example, a memory cell containing information that the user wants to read from memory array 400, or to store information that the user wants to write to memory array 400. It may be an unused memory cell that is available. The memory controller 435 may identify the location of a target memory cell in the memory array 400. The memory controller 435 may then have the plate driver component 420 activate a single plate portion 405 corresponding to the location of the target memory cell. In some embodiments, the plate driver component 420 uses one of a plurality of plate drivers 425 to apply a voltage to the plate wire 430 corresponding to the location of the target memory cell to plate the plate. May activate portion 405. In some embodiments, the plate driver component 420 may not activate other plate portions 405 other than the plate portion 405 corresponding to the location of the target memory cell. That is, the plate driver component 420 may activate only the plate portion 405 corresponding to the location of the target memory cell, but may not activate any other plate portion. The plate driver 420 may set the other plate portions 405 in an inactivated state (this may include keeping those plate portions 405 in an inactivated state). .. The memory controller 435 activates the row decoder with a selection component (not shown) corresponding to the location of the target memory cell in order to connect the target memory cell to one of the digit lines 415. There is. The selection component may be an example of an embodiment of the selection component 220 described with reference to FIG. The memory controller can then read from or write to the target memory cell via the column decoder 440 and the sensing component 445, as described with reference to FIG.

In some examples, the memory array 400 may include one or more dummy lines. For example, the plurality of word lines in the memory array 400 may include one or more dummy word lines. The dummy word line may be installed adjacent to at least one edge of the plate portion 405. The dummy word line may be electrically isolated from the memory cell of the memory array 400. For example, each of the dummy word lines may not be connected to any of the memory cells on any of the plate portions 405. Dummy word lines are sometimes used to address design problems. For example, if the cell pitch of the plate is 2F, the plate line spacing may be increased from F to 3F by adding dummy word lines. In some examples, a plurality of digit wires are similarly installed adjacent to at least one edge of the plate portion 405 and electrically isolated from the memory cells of the memory array 400. Or it may contain multiple dummy digit lines.

FIG. 5 illustrates an exemplary timing diagram 500 for an exemplary memory array using memory plate segmentation according to various embodiments of the present disclosure. The memory array may be an example of an embodiment of the memory array 400 described with reference to FIG.

The timing diagram 500 includes a plate signal 505 corresponding to a first voltage in the plate wire, which plate wire may be an example of an embodiment of the plate wire 430 described with reference to FIG. The timing diagram further includes a word line signal 510 corresponding to a second voltage in the word line, which word line may be an example of an embodiment of the word line 110 described with reference to FIG. The timing diagram further includes a digit line signal 515 corresponding to a third voltage in the digit line, which digit line may be an example of an embodiment of the digit line 415 described with reference to FIG. For example, the digit line signal 515 may indicate a voltage at a location designated as digit line A (DA) shown in FIG. The timing diagram also includes an input / output signal 520 corresponding to a fourth voltage at the input / output of the sensing component, which is an example of the sensing component 445 described with reference to FIG. Sometimes. For example, the input / output signal 520 may indicate a voltage at a location designated as digit line B (DB) shown in FIG.

At time t0, the plate portion is activated by applying a voltage to the plate wire. Therefore, the plate signal 505 increases based on the voltage applied to the plate wire, for example by the plate driver. At time t1, a voltage is applied to the word line, which increases the second voltage on the word line signal 510. Applying a voltage to the word line results in the memory cell being connected to the digit line, as described with reference to FIG. Therefore, the digit line signal 515 increases at time t2. The sensing component then compares the third voltage of the digit line signal 515 to the reference signal at time t3 and determines that the third voltage corresponds to logic "0". Then, the reading operation is completed. The plate is deactivated by reducing the voltage of the plate signal 505 to zero at time t4, and the wordline signal 510 is similarly reduced to zero at time t5. The data is then readable or writable to another memory cell in the memory array.

In some examples, plate lines joined to unaddressed lines (not shown) may not be biased when the selected cell is being accessed. Therefore, power consumption is limited to the bias of the selected plate wire, while avoiding the power consumption associated with the bias of the plate wire coupled to the otherwise unaddressed wire. Unspecified lines may be reduced compared to biased systems. In some embodiments, the lack of bias for unaddressed cells may also reduce electrical interference for unaddressed cells.

FIG. 6 illustrates an exemplary memory array 600 using memory plate segmentation according to various embodiments of the present disclosure. The memory array 600 includes a first group 610 of segmentation lines extending in a first direction (eg, vertical) and a second group 615 of segmentation lines extending in a second direction (eg, horizontal). It may include multiple plate portions 605 separated by multiple segmentation lines. Each of the plurality of plate portions 605 may include a plurality of memory cells, the plurality of memory cells being described with reference to memory cell 105 or FIG. 2, which is described with reference to FIG. It may be an example of the aspect of the memory cell 105-a. Memory cells can be accessed by applying voltage to the word and digit lines, as described with reference to FIG.

Each of the plurality of plate portions 605 may be activated by the plate driver component 620. The plate driver component 620 may include a plurality of plate drivers 625, each plate driver 625 being configured to be coupled to and activated by one of the plurality of plate portions 605. Each of the plate drivers 625 may be connected to the plate portion 605 via a plate wire 630. The plate wire 630 may be an example of an embodiment of the plate wire 210 described with reference to FIG. The plate driver 625 may activate the plate portion 605 by applying a voltage to the corresponding plate wire 630. In some cases, the plate driver component 620 may be installed in a different position of the possible positions with respect to the sensing component 635. In some embodiments, the plate driver component 620 may be installed as shown in FIG. In some other embodiments, the plate driver component 620 may be installed on the same side of the memory array 600 as the sensing component 635. In some other embodiments, the plate driver component 620 may be installed on the opposite side of the memory array 600 from the sensing component 635.

The memory array 600 includes a sensing component 635 and a row decoder, a column decoder, a memory controller, and the like, such as the row decoder 120, the column decoder 130, and the memory controller 140, which are described with reference to FIG. 1, respectively. , May contain additional components. Data may be written to and read from memory array 600, as described with reference to FIG. However, the power consumption of the memory array 600 may be reduced as compared to the power consumption of the memory array 400. For example, the power consumption of the memory array 600 may be about 25% of the power consumption of the memory array 400.

FIG. 7 illustrates an exemplary memory array 700 using memory plate segmentation according to various embodiments of the present disclosure. The memory array 700 includes a first group 710 of segmentation lines extending in a first direction (eg, vertical) and a second group 715 of segmentation lines extending in a second direction (eg, horizontal). It may include multiple plate portions 705 separated by multiple segmentation lines. Each of the plurality of plate portions 705 may include a plurality of memory cells, the plurality of memory cells being described with reference to memory cell 105 or FIG. 2 as described with reference to FIG. It may be an example of the aspect of the memory cell 105-a. Memory cells can be accessed by applying voltage to the word and digit lines, as described with reference to FIG.

Each of the plurality of plate portions 705 may be activated by the plate driver component 720. The plate driver component 720 may include a plurality of plate drivers 725, each plate driver 725 being configured to be coupled to and activated in one of the plurality of plate portions 705. Each of the plate drivers 725 may be connected to several plate portions 705. For example, each plate driver 725 may be coupled to a plate driver wire 730. The plate driver wire 730 may be coupled to a plate wire 735 on a plurality of plate portions 705. The plate wire 735 may be an example of an embodiment of the plate wire 210 described with reference to FIG. The plate driver 725 may activate each of the plate portions 705 to which it is coupled by applying a voltage to the plate driver wire 730. The plate driver wire 730 may be coupled to the plate driver wire 730 connected to the plate portion 705 in every row 740 of the memory array 600. In some examples, the plate driver wire 730 may be coupled to the plate portion 705 in at least two rows 745. For example, the plate driver wire 730 may be coupled to the plate portion 705 in every row 745 so that the plate portion 705 in every row 745 is activated by applying a voltage to the plate driver wire 730. be.

The memory array 700 may include additional components such as sensing components, row decoders, column decoders, and memory controllers, each of which is a sensing component, row decoder, column decoder, and memory controller. , May be an example of aspects of a sensing component 125, a row decoder 120, a column decoder 130, and a memory controller 140, as described with reference to FIG. Data may be written to and read from memory array 700, as described with reference to FIGS. 1 and 4.

In some examples, the memory array 700 may include one or more dummy lines. For example, the plurality of word lines in the memory array 700 may include one or more dummy word lines. The dummy word line may be installed adjacent to at least one edge of the plate portion 705. The dummy word line may be electrically isolated from the memory cells of the memory array 700. For example, each of the dummy word lines may not be connected to any of the memory cells on any of the plate portions 705. Dummy word lines are sometimes used to address design problems. For example, if the cell pitch of the plate is 2F, the plate line spacing may be increased from F to 3F by adding dummy word lines. In some examples, a plurality of digit wires are similarly installed adjacent to at least one edge of the plate portion 705 and electrically isolated from the memory cells of the memory array 700. Or it may contain multiple dummy digit lines.

FIG. 8 illustrates an exemplary schematic 800 for memory cells in a memory array using memory plate segmentation according to the various embodiments of the present disclosure. The schematic may include a memory cell 805 that includes a memory plate 810 and a selection component 815. Memory cells 805 may be coupled to word lines 820 and digit lines 825. Memory cells 805, word lines 820, and digit lines 825 may be examples of aspects of memory cells 105, word lines 110, and digit lines 115 as described with reference to FIG. The memory plate 810 may be an example of an embodiment of the plate portion 405 described with reference to FIG. The selection component 815 may be an example of an embodiment of the selection component 220 described with reference to FIG.

Parasitic capacitance may be generated when the memory plate 810 is activated. For example, a first parasitic capacitance 830 may be generated between the digit line 825 and the memory cell 805, and a second parasitic capacitance 835 may be generated between the word line 820 and the memory cell 805. In some cases, a third parasitic capacitance 840 may be generated between the word line 820 and the digit line 825. A first parasitic capacitance 830, a second parasitic capacitance 835, and a third parasitic capacitance 840 are generated for each memory cell bound to the memory plate 810 when the memory plate 810 is activated. May be done. The combination of the first parasitic capacitance 830, the second parasitic capacitance 835, and the third parasitic capacitance 840 may be considered as a parasitic load for the memory plate 810. Power consumption may be reduced by reducing the number of memory cells coupled to the activated memory plate, thereby reducing the number of parasitic loads.

For example, an electronic memory device with 4,096 memory cells may have a single memory plate. In such an example, the memory device may have a parasitic load of 4,096 when the memory plate is activated. In some other examples, the memory device may have four separate memory plates, for example, as described with reference to FIG. In such an example, when one of the four memory plates is activated, the memory device has a parasitic load of 1,024 and the power consumption due to the parasitic capacitance is when using a single plate. Can be reduced by 75% compared to. The other three memory plates are not activated. In some other examples, the memory device may have 16 separate memory plates, for example, as described with reference to FIG. In such an example, when one of the 16 memory plates is activated, the memory device may have 256 parasitic loads, so the power consumption due to parasitic capacitance has a single plate. It will be 1/16 of the power consumption of the memory device. The other 15 memory plates are not activated.

FIG. 9 shows a block diagram 900 of a memory controller 915 that supports the operation of the device using memory plate segmentation according to an embodiment of the present disclosure. The memory controller 915 may be an example of the memory controller 140 described with reference to FIG. 1, FIG. 10, or both. The memory controller 915 includes a bias component 920, a timing component 925, a target memory cell locator 930, a plate driver activation component 935, a wordline selector 940, and a memory cell reader 945. And a memory cell writer 950. Each of these modules may communicate directly or indirectly with each other (eg, via one or more buses).

The target memory cell locator 930 may determine the location of the target memory cell. The target memory cell may be the memory cell 105 described with reference to the figure above.

The plate driver activation component 935 may activate the plate portion corresponding to the location of the target memory cell, which is separated from the other set of plate portions by a segmentation line and this segmentation. The lines include a first set of vertically extending segmentation lines. The plate driver activation component 935 may activate the plate portion by sending a command to the plate driver to apply a first voltage to the plate wire coupled to the plate portion. The plate driver activation component 935 may activate the plate portion corresponding to the location of the target memory cell, which is separated from the other set of plate portions by a segmentation line and this segmentation. The line includes a first set of segmentation lines extending in a first direction and a second set of segmentation lines extending in a second direction perpendicular to the first direction. The plate driver activation component 935 may activate the plate portion by sending a command to the plate driver to apply a first voltage to the plate wire coupled to the plate portion. In some examples, the voltage may not be applied to the plate portion associated with the unaddressed memory cell.

The word line selector 940 applies a first voltage to the word line coupled to the memory cell disposed on the plate portion in order to connect the target memory cell to the digit line extending in the first direction. May be applied.

The memory cell reader 945 may determine the logical value associated with the target memory cell based on a second voltage on the digit line.

The memory cell writer 950 may apply a second voltage to the digit line to set the logical value associated with the target memory cell.

FIG. 10 shows a diagram of a system 1000 including device 1005 using memory plate segmentation according to an embodiment of the present disclosure. Device 1005 communicates, including memory controller 1015, memory cell 1020, basic input / output system (BIOS) component 1025, processor 1030, I / O controller 1035, and peripheral component 1040. May include components for two-way voice and data communication, including components for transmission and reception. These components may communicate electronically via one or more buses (eg, bus 1010).

The memory controller 1015 may or may be an example of the components of the memory controller 140 described above, for example with reference to FIG. 1 or FIG. Memory cell 1020 may store information (ie, in the form of a logical state), as described herein.

The BIOS component 1025 may be a software component including a BIOS that operates as firmware that can initialize and run various hardware components. The BIOS component 1025 may also manage the data flow between the processor and various other components, such as peripheral components, input / output control components, and the like. The BIOS component 1025 may include programs or software stored in read-only memory (ROM), flash memory, or any other non-volatile memory.

The processor 1030 is an intelligent hardware device (eg, general purpose processor, DSP, central processing unit (CPU), microcontroller, ASIC, FPGA, programmable logic device, individual gate or transistor logic component, individual hardware. May include components, or any combination thereof). In some cases, the processor 1030 may be configured to use a memory controller to operate the memory array. In other cases, the memory controller may be integrated into processor 1030. Processor 1030 has various functions (eg, a function or task that supports memory plate segmentation to reduce operating power). May be configured to execute computer-readable instructions stored in memory.

The I / O controller 1035 may manage input and output signals for device 1005. The I / O controller 1035 may also manage peripherals that are not integrated into device 1005. In some cases, the I / O controller 1035 may represent a physical connection or port to an external peripheral device. In some cases, the I / O controller 1035 may be iOS®, ANDROID®, MS-DOS®, MS-WINDOWS®, OS / 2®, UNIX®. Operating systems such as Trademark), LINUX®, or another known operating system may be utilized. In other cases, the I / O controller 1035 may represent or interact with a modem, keyboard, mouse, touch screen, or similar device. In some cases, the I / O controller 1035 may be implemented as part of the processor. In some cases, the user may interact with the device 1005 via the I / O controller 1035 or through the hardware components controlled by the I / O controller 1035.

Peripheral component 1040 may include any input or output device, or an interface for such device. Examples are disk controllers, sound controllers, graphics controllers, Ethernet controllers, modems, universal serial bus (USB) controllers, serial or parallel ports, or peripheral component interconnects (PCI). There can be peripheral card slots such as slots or accelerated graphics port (AGP) slots.

Input 1045 may represent a device or signal external to device 1005 that provides input to device 1005 or its components. It may include a user interface, or it may include an interface with or to other devices. In some cases, the input 1045 may be managed by the I / O controller 1035 and may interact with the device 1005 via the peripheral component 1040.

Output 1050 may also represent a device or signal that is external to device 1005 and is configured to receive output from device 1005 or any of its components. Examples of the output 1050 may be a display, an audio speaker, a printing device, another processor, or a printed circuit board. In some cases, the output 1050 may be a peripheral element that interfaces with the device 1005 via the peripheral component 1040. In some cases, the output 1050 may be managed by the I / O controller 1035.

The components of device 1005 may include circuits designed to perform functions. It may include various circuit elements configured to perform the functions described herein, such as conductive wires, transistors, capacitors, inductors, resistors, amplifiers, or other active or inert elements. obtain. The device 1005 may be a computer, a server, a laptop computer, a notebook computer, a tablet computer, a mobile phone, a wearable electronic device, a personal electronic device, or the like. Alternatively, device 1005 may be a portion or aspect of such a device.

FIG. 11 shows a flowchart illustrating method 1100 for operating a device using memory plate segmentation according to an embodiment of the present disclosure. The operation of method 1100 may be performed by the memory controller 140 or its components as described herein. For example, the operation of method 1100 may be performed by the memory controller 140 described with reference to FIGS. 1-10. In some examples, the memory controller 140 may execute a set of code to control the functional elements of the device to perform the functions described below. In addition, or alternative, the memory controller 140 may use special purpose hardware to perform aspects of the functions described below.

In some cases, the method may also include determining the location of the target memory cell. In some cases, the method is to activate the plate portion corresponding to the location of the target memory cell by a plate driver, which is separated from multiple other plate portions by segmentation lines. The segmentation line may also include activation, comprising a first set of vertically extending segmentation lines. In some cases, the method may also include activating the plate portion to apply a first voltage to the plate wire coupled to the plate portion. In some cases, the method applies a first voltage to the word wire coupled to the memory cell located above the plate portion in order to connect the target memory cell to the vertically extending digit wire. May also include doing. In some cases, the method may also include determining the logical value associated with the target memory cell based on a second voltage on the digit line. In some cases, the method may also include applying a second voltage to the digit line to set the logical value associated with the target memory cell.

At block 1105, the memory controller 140 may determine the location of the target memory cell. The operation of block 1105 can be performed by the methods described herein. In some examples, the mode of operation of block 1105 may be performed by the target memory cell locator described with reference to FIGS. 4, 6, 7, 9, and 10.

At block 1110, the memory controller 140 may activate a plate portion corresponding to the location of the target memory cell, which is separated from the other plate portions by a segmentation line, which is a segmentation line. Includes a first set of vertically extending segmentation lines. The memory controller 140 may activate the plate portion by sending an instruction to the plate driver to apply a voltage to the plate portion corresponding to the location of the target memory cell. The operation of block 1110 may be performed by the methods described herein. In some examples, the mode of operation of block 1110 may be performed by the plate driver activation component described with reference to FIGS. 4, 6, 7, 9, and 10.

FIG. 12 shows a flowchart illustrating a method 1200 for operating a device using memory plate segmentation according to an embodiment of the present disclosure. The operation of the method 1200 may be performed by the memory controller 140 or its components as described herein. For example, the operation of method 1200 may be performed by the memory controller 140 described with reference to FIG. In some examples, the memory controller 140 may execute a set of code to control the functional elements of the device performing the functions described below. In addition, or alternative, the memory controller 140 may use special purpose hardware to perform aspects of the functions described below.

In some cases, the method may also include determining the location of a target memory cell. In some cases, the method is to activate the plate portion corresponding to the location of the target memory cell by a plate driver, which is separated from multiple other plate portions by segmentation lines. The segmentation line may also include activation, comprising a first set of vertically extending segmentation lines. In some cases, the method applies a first voltage to the word wire coupled to the memory cell located above the plate portion in order to connect the target memory cell to the vertically extending digit wire. May also include doing.

At block 1205, the memory controller 140 may determine the location of the target memory cell. The operation of block 1205 can be performed by the methods described herein. In some examples, the mode of operation of block 1205 may be performed by the target memory cell locator described with reference to FIGS. 4, 6, 7, 9, and 10.

At block 1210, the memory controller 140 may activate a plate portion corresponding to the location of the target memory cell, which is separated from the other plate portions by a segmentation line. Includes a first set of vertically extending segmentation lines. The memory controller 140 may activate the plate portion by sending an instruction to the plate driver to apply a voltage to the plate portion corresponding to the location of the target memory cell. The operation of block 1210 can be performed by the methods described herein. In some examples, the mode of operation of block 1210 may be performed by the plate driver activation component described with reference to FIGS. 4, 6, 7, 9, and 10.

At block 1215, the memory controller 140 applies a first voltage to the word line coupled to the memory cell disposed on the plate portion to connect the target memory cell to the vertically extending digit line. May be applied. The operation of block 1215 can be performed by the methods described herein. In some examples, the mode of operation of block 1215 may be performed by the wordline selector described with reference to FIGS. 4, 6, 7, 9, and 10.

FIG. 13 shows a flowchart illustrating method 1300 for operating a device using memory plate segmentation according to an embodiment of the present disclosure. The operation of method 1300 may be performed by the memory controller 140 or its components as described herein. For example, the operation of method 1300 may be performed by a memory controller as described with reference to FIGS. 1, 4, 6, 7, 9, and 10. In some examples, the memory controller 140 may execute a set of code to control the functional elements of the device to perform the functions described below. In addition, or alternative, the memory controller 140 may use special purpose hardware to perform aspects of the functions described below.

In some cases, the method may also include determining the location of the target memory cell. In some cases, the method is to activate the plate portion corresponding to the location of the target memory cell by a plate driver, which is separated from multiple other plate portions by a segmentation line. The segmentation line may also be activated, comprising a first set of segmentation lines extending in a first direction and a second set of segmentation lines extending in a second direction perpendicular to the first direction. May include. In some cases, the method may also include activating the plate portion to apply a first voltage to the plate wire coupled to the plate portion. In some cases, the method is to connect the target memory cell to the digit line extending in the first direction by the first voltage on the word line coupled to the memory cell disposed on the plate portion. May also include the application of. In some cases, the method may also include determining the logical value associated with the target memory cell based on a second voltage on the digit line. In some cases, the method may also include applying a second voltage to the digit line to set the logical value associated with the target memory cell.

At block 1305, the memory controller 140 may determine the location of the target memory cell. The operation of block 1305 can be performed by the methods described herein. In some examples, the mode of operation of block 1305 may be performed by the target memory cell locator described with reference to FIGS. 4, 6, 7, 9, and 10.

At block 1310, the memory controller 140 may activate a plate portion corresponding to the location of the target memory cell, which is separated from the other plate portions by a segmentation line, which is a segmentation line. Includes a first set of segmentation lines extending in a first direction and a second set of segmentation lines extending in a second direction perpendicular to the first direction. The memory controller 140 may activate the plate portion by sending an instruction to the plate driver to apply a voltage to the plate portion corresponding to the location of the target memory cell. The operation of block 1310 can be performed by the methods described herein. In some examples, the mode of operation of block 1310 may be performed by the plate driver activation component described with reference to FIGS. 4, 6, 7, 9, and 10.

FIG. 14 shows a flow chart illustrating a method 1400 for operating a device using memory plate segmentation according to an embodiment of the present disclosure. The operation of method 1400 may be performed by the memory controller 140 or its components as described herein. For example, the operation of method 1400 may be performed by a memory controller as described with reference to FIGS. 4, 6, 7, 9, and 10. In some examples, the memory controller 140 may execute a set of code to control the functional elements of the device performing the functions described below. In addition, or alternative, the memory controller 140 may use special purpose hardware to perform aspects of the functions described below.

In some cases, the method may also include determining the location of the target memory cell. In some cases, the method is to activate the plate portion corresponding to the location of the target memory cell by a plate driver, which is separated from multiple other plate portions by a segmentation line. The segmentation line may also be activated, comprising a first set of segmentation lines extending in a first direction and a second set of segmentation lines extending in a second direction perpendicular to the first direction. May include. In some cases, the method is to connect the target memory cell to the digit line extending in the first direction by the first voltage on the word line coupled to the memory cell disposed on the plate portion. May also include the application of.

At block 1405, the memory controller 140 may determine the location of the target memory cell. The operation of block 1405 can be performed by the methods described herein. In some examples, the mode of operation of block 1405 may be performed by the target memory cell locator described with reference to FIGS. 4, 6, 7, 9, and 10.

At block 1410, the memory controller 140 may activate a plate portion corresponding to the location of the target memory cell, which is separated from the other plate portions by a segmentation line, which is a segmentation line. Includes a first set of segmentation lines extending in a first direction and a second set of segmentation lines extending in a second direction perpendicular to the first direction. The memory controller 140 may activate the plate portion by sending an instruction to the plate driver to apply a voltage to the plate portion corresponding to the location of the target memory cell. The operation of block 1410 can be performed by the methods described herein. In some examples, the mode of operation of block 1410 may be performed by the plate driver activation component described with reference to FIGS. 4, 6, 7, 9, and 10.

In block 1415, the memory controller 140 is first connected to a word line coupled to a memory cell disposed on a plate portion to connect a target memory cell to a digit line extending in the first direction. A voltage may be applied. The operation of block 1415 can be performed by the methods described herein. In some examples, the mode of operation of block 1415 may be performed by the wordline selector described with reference to FIGS. 4, 6, 7, 9, and 10.

The device will be described. In some examples, the device is a means for determining the location of the target memory cell and for the plate driver to activate the plate portion corresponding to the location of the target memory cell. Thus, this plate portion is separated from a plurality of other plate portions by a segmentation line, which may support a means for activation, comprising a first set of vertically extending segmentation lines. ..

In some examples, the device may support means for setting multiple other plate portions to the inactivated state. In some examples, the means for activating the plate portion may include means for applying a first voltage to the plate wire coupled to the plate portion. In some examples, the device has a first voltage on a word line coupled to a memory cell disposed over a plate portion to connect the target memory cell to a vertically extending digit line. May support means for applying. In some examples, the device may support means for determining the logical value associated with the target memory cell based on a second voltage on the digit line. In some examples, the device may support means for applying a second voltage to the digit line to set the logical value associated with the target memory cell.

The device will be described. In some examples, the device is a means for determining the location of the target memory cell and for the plate driver to activate the plate portion corresponding to the location of the target memory cell. This plate portion is separated from the plurality of other plate portions by a segmentation line, and the segmentation line is a second set perpendicular to the first direction and a first set of segmentation lines extending in the first direction. May support means for activation, including a second set of directional segmentation lines.

In some examples, the device may support applying a first voltage to the plate wire coupled to the plate portion when activating the plate portion. In some examples, the device first connects to a word line coupled to a memory cell disposed above a plate portion to connect the target memory cell to a digit line extending in the first direction. May support means for applying the voltage of. In some examples, the device may support means for determining the logical value associated with the target memory cell based on a second voltage on the digit line. In some examples, the device may support means for applying a second voltage to the digit line to set the logical value associated with the target memory cell.

The device will be described. In some examples, the device is a plurality of plate portions separated by a plurality of segmentation lines, the plurality of segmentation lines being a first set of segmentation lines extending in a first direction and a first direction. A plate driver component comprising a plurality of plate portions and a plurality of plate drivers coupled to these plurality of plate portions, comprising a second set of segmentation lines extending in a second direction perpendicular to. , May include a controller that electronically communicates with this plate driver component. In some examples, the controller supports means for identifying the location of the target memory cell and for activating one of the multiple plate portions corresponding to the location of the target memory cell. I have something to do.

In some examples, the controller may support a means for applying a first voltage to the word line coupled to the target memory cell to connect the target memory cell to the digit line. .. In some examples, the controller may support a means for determining the logical value associated with the target memory cell based on a second voltage on the digit line. In some examples, the controller may support means for applying a second voltage to the digit line to set the logical value associated with the target memory cell.

The description herein provides an example and is not the scope, applicability, or limitation of the examples set forth in the claims. Changes may be made in the function and composition of the elements discussed without departing from the scope of this disclosure. The different examples may omit, replace, or add different steps or components as needed. Also, the features described for some examples may be combined in other examples.

In the present specification, the description described in connection with the accompanying drawings describes an exemplary configuration and may not represent all examples that can be implemented or are within the scope of the claims. It is within the scope of claims. As used herein, the terms "example," "exemplary," and "embodiment" mean "useful as an example, case, or example," and are superior to "favorable" or "other examples." It does not mean "it is advantageous". The detailed description includes specific details for the purpose of providing an understanding of the technique being described. However, these techniques can be performed without these specific details. In some cases, well-known structures and devices are shown in block diagram format to avoid obscuring the concept of the examples described.

In the attached figure, similar components or features may have the same reference label. In addition, different components of the same type can be distinguished by tracking the reference label by a second label that distinguishes between dashes and similar components. When the first reference label is used herein, the description is applicable to any one of the similar components having the same first reference label, regardless of the second reference label. ..

The information and signals described herein may be represented using any of a variety of different techniques and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description are voltage, current, electromagnetic, magnetic or magnetic particles, light fields or optical particles, or any of them. May be represented by a combination. Some drawings may illustrate the signal as a single signal. However, it will be appreciated by those skilled in the art that a signal may represent a bus of signals, which may have different bit widths.

As used herein, the term "virtual ground" refers to a node in an electrical circuit that is maintained at a voltage of approximately zero volts (0V) but is not directly connected to ground. Therefore, the voltage of virtual ground fluctuates temporarily and may return to about 0V in the steady state. Virtual grounding can be performed using various electronic circuit elements such as voltage dividers consisting of operational amplifiers and resistors. Other embodiments are possible. "Virtual grounding" or "virtually grounding" means connected to about 0V.

The term "electronic communication" refers to the relationships between components that support the flow of electrons between the components. It may include direct connections between components or it may include intermediate components. Components that are in electronic communication may actively exchange electrons or signals (eg, in an energized circuit), or actively exchange electrons or signals (eg, in an disconnected circuit). It may not be replaced, but it may be configured and operable to exchange electronic or signal when the circuit is energized. As an example, two components physically connected via a switch (eg, a transistor) are in electronic communication regardless of the state of the switch (ie, open or closed).

The term "insulated" refers to the relationship between components where it is currently impossible for electrons to flow between them. The components are isolated from each other if there is an open circuit between them. For example, two components physically connected by a switch may be isolated from each other when the switch is open.

As used herein, the term "short circuit" is used between components to establish a conductive path between the components through activation of a single intermediate component between the two components in question. Refers to the relationship of. For example, a first component shorted to a second component may exchange electrons with the second component when the switch between the two components is closed. Therefore, a short circuit may be a dynamic operation that allows the flow of charge between the components (or lines) that communicate electronically.

The devices discussed herein, including the memory array 100, may be formed on semiconductor substrates such as silicon, germanium, silicon-germanium alloys, gallium arsenide, gallium nitride and the like. In some cases, the substrate is a semiconductor wafer. In other cases, the substrate may be a silicon on insulator (SOI) substrate such as silicon on glass (SOG) or silicon on sapphire (SOP), or a semiconductor on another substrate. It may be an epitaxial layer of material. The conductivity of the substrate or subregions of the substrate may be controlled through doping with various chemical species, including but not limited to phosphorus, boron, or arsenic. Doping may be performed by ion implantation or by any other doping means during the initial formation or growth of the substrate.

One or more transistors discussed herein may represent a field effect transistor (FET) and may include three terminal devices including a source, a drain, and a gate. The terminals may be connected to other electronic elements through a conductive material, such as metal. Sources and drains may be conductive and may include heavily doped, eg degenerate, semiconductor regions. Sources and drains may be separated by lightly doped semiconductor regions or channels. If the channel is n-type (ie, the majority carrier is an electron), the FET may be referred to as an n-type FET. If the channel is p-type (ie, the majority carrier is a hole), the FET may be referred to as a p-type FET. The channel may be capped by an insulating gate oxide. Channel conductivity may be controlled by applying a voltage to the gate. For example, applying a positive or negative voltage to an n-type FET or p-type, respectively, may result in the channel becoming conductive. A transistor may be "on" or "activated" when a voltage greater than or equal to the transistor's threshold voltage is applied to the transistor gate. A transistor may be "off" or "deactivated" when a voltage less than the transistor's threshold voltage is applied to the transistor gate.

The various exemplary blocks, components, and modules described in connection with the disclosure herein are general purpose processors, DSPs, ASICs, FPGAs or other programmable logic devices, individual gate or transistor logic, individual. Can be implemented or performed using the hardware components of the above, or any combination thereof designed to perform the functions described herein. The general purpose processor may be a microprocessor, but in an alternative form, the processor may be any conventional processor, controller, microcontroller, or state machine. Processors are implemented as a combination of computing devices (eg, a combination of DSPs and microprocessors, multiple microprocessors, one or more microprocessors associated with a DSP core, or any other such configuration). You may.

The functions described herein may be performed in hardware, software executed by a processor, firmware, or any combination thereof. When performed in software executed by a processor, the function may be stored or transmitted on a computer-readable medium as one or more instructions or codes. Other examples and examples are within the claims of the present disclosure and attachment. For example, due to the nature of the software, the functions described above can be performed using software, hardware, firmware, hard wiring, or any combination thereof performed by the processor. The features that perform the function may also be physically installed in various locations, including the dispersion of the functional parts so that they are performed in different physical locations. Also, when used herein, including within the claims, a list of items (eg, preceded by a phrase such as "at least one of" or "one or more of". The "or" used within) is a comprehensive list, and thus, for example, a list of at least one of A, B, or C is A or B or C or AB or AC. Or BC or ABC (ie, A and B and C).

Computer-readable media include both non-temporary computer storage media and communication media, including any medium that facilitates the transfer of computer programs from one location to another. The non-temporary storage medium may be any available medium accessible by a general purpose computer or a special purpose computer. By way of example, but not limited to, non-temporary computer-readable media include RAM, ROM, electrically erasable programmable read-only memory (EEPROM), compact disk (CD) ROM or other disk disk storage, magnetic disks. It can be used to convey or store the desired program code means in the form of storage devices or other magnetic storage devices, or instructions or data structures, by a general purpose computer or special purpose computer, or a general purpose processor or special purpose processor. It can include any other non-temporary medium that is accessible.

Also, any connection is appropriately referred to as a computer-readable medium. For example, software uses coaxial cables, fiber optic cables, twisted pairs, digital subscriber lines (DSL), or wireless technologies such as infrared, wireless, and microwave to websites, servers, or other remotes. • When transmitted from a source, coaxial cables, fiber optic cables, twisted pairs, digital subscriber lines (DSL), or wireless technologies such as infrared, wireless, and microwave are included in the definition of medium. Discs and discs, as used herein, include CDs, laser discs, optical discs, digital versatile discs (DVDs), floppy discs, and Blu-ray discs. The disk) usually reproduces the data magnetically, and the disc) optically reproduces the data using a laser. The above combinations are also included within the scope of computer readable media.

The description herein is provided to allow one of ordinary skill in the art to make or use the disclosure. Various modifications of the disclosure will be readily apparent to those of skill in the art. The general principles defined herein can be applied to other variants without departing from the scope of the present disclosure. Accordingly, this disclosure is not limited to the examples and designs described herein, but should be given the broadest scope consistent with the principles and novel features disclosed herein.

Claims (35)

At least three plate portions separated by a plurality of segmentation lines, the plurality of segmentation lines comprising a first set of segmentation lines extending in a first direction, each of the at least three plate portions being a memory. Underneath a separate array of cells, each array contains multiple memory cells, each memory cell with a strong dielectric capacitor .
For each array of memory cells, each of the memory cells in the array is coupled to a sensing component via one of a plurality of digit lines extending in the first direction, and the sensing component is coupled. , The at least three plate portions, which are installed adjacent to the first side of the at least three plate portions .
A single plate driver component comprising multiple plate drivers, flanked by a second side of the three plate portions, each of the plurality of plate drivers being separate. An electronic memory device comprising the plate driver component, which is connected to one of the at least three plate portions by a plate wire of the plate. The electronic memory apparatus according to claim 1, wherein the plurality of segmentation lines further include a second set of segmentation lines extending in the second direction perpendicular to the first direction. The electronic memory apparatus according to claim 1, further comprising a memory controller coupled to the plate driver component. The electronic memory of claim 3 , wherein the memory controller is configured to activate one of the at least three plate portions based at least in part on the location of the target memory cell. Device. The memory controller is configured to activate one of the at least three plate portions while setting another plate portion of the at least three plate portions to be inactive. The electronic memory device according to claim 4 . With the row decoder
The electronic memory apparatus according to claim 1, further comprising the row decoder with a plurality of word lines coupled to the at least one memory cell disposed on each of the at least three plate portions. A second set of segmentation lines extending in a first direction and a second set perpendicular to the first direction, which are at least three plate portions separated by a plurality of segmentation lines. With a second set of segmentation lines extending in the direction of , each of the at least three plate portions is under a separate array of memory cells, each array containing multiple memory cells, each memory. -Cells include strong dielectric capacitors
For each array of memory cells, each of the memory cells in the array is coupled to the sensing component via one of a plurality of digit lines extending in the first direction. With the at least three plate portions, which are installed adjacent to the first side of the at least three plate portions .
A single plate driver component comprising multiple plate drivers , flanked by a second side of the at least three plate portions, each of the plurality of plate drivers being an individual. An electronic memory device comprising said single plate driver component connected to one of the at least three plate portions by another plate wire. The electronic memory device of claim 7 , wherein the at least one memory cell comprises a ferroelectric capacitor. The electronic memory apparatus of claim 7 , further comprising a memory controller coupled to the single plate driver component. 9. The electronic memory apparatus of claim 9 , wherein the memory controller is configured to activate one of the at least three plate portions based at least in part on the location of the target memory cell. .. With the row decoder
The electronic memory apparatus according to claim 7 , further comprising the row decoder with a plurality of word lines coupled to the at least one memory cell disposed on each of the at least three plate portions. The plurality of word wires comprises at least one dummy wire, the at least one dummy wire being electrically isolated from the cell of the apparatus and adjacent to at least one edge of the at least three plate portions. The electronic memory device according to claim 11 , which is installed. The at least three plate portions are arranged in multiple columns and in multiple rows.
Each of the plurality of plate drivers is coupled to the plate portion in each of the plurality of rows.
Each of the plurality of plate drivers is coupled to a plate portion in at least two of the plurality of rows.
The electronic memory device according to claim 7 . 13. The electronic memory device of claim 13 , wherein each of the plurality of plate drivers is coupled to a plate portion in each of the plurality of rows. Determining the location of the target memory cell and
The plate driver of a plurality of plate drivers installed within a single plate driver component activates the plate portion of the target memory cell corresponding to the location , said. The plate portion is separated from at least two other plate portions by separate segmentation lines, the segmentation line comprising a first set of vertically extending segmentation lines , each of which is in a memory cell. Underneath the individual arrays, each array contains multiple memory cells coupled to the sensing component via one of a plurality of digit lines, and each memory cell contains a dielectric capacitor. , The sensing component is installed adjacent to each first side of the plate portion, and the single plate driver component is installed adjacent to each second side of the plate portion. , The method comprising the activation. 15. The method of claim 15 , further comprising setting at least one of the two other plate portions to a deactivated state. 15. The method of claim 15 , wherein activating the plate portion comprises applying a first voltage to the plate wire coupled to the plate portion. Further applying a first voltage to the word wire coupled to the memory cell disposed on the plate portion to connect the target memory cell to the vertically extending digit wire. The method of claim 15 , including. 18. The method of claim 18 , further comprising determining a logical value associated with the target memory cell based on a second voltage on the digit line. 18. The method of claim 18 , further comprising applying a second voltage to the digit line to set a logical value associated with the target memory cell. Determining the location of the target memory cell and
Installed within a single plate driver component connected to a plate portion via a separate plate wire of one or more plate wires corresponding to the location of the target memory cell . The plate driver of the plurality of plate drivers activates the plate portion, the plate portion is separated from at least two other plate portions by a segmentation line, and the segmentation line is the first. Each of the plate portions comprises a first set of segmentation lines extending in one direction and a second set of segmentation lines extending in the second direction perpendicular to the first direction, each of which is a memory. Underneath a separate array of cells, each array has multiple memory cells coupled to sensing components via one of multiple digit lines, each memory cell being a strong dielectric capacitor. The sensing component is located adjacent to each first side of the plate portion and the single plate driver component is adjacent to each second side of the plate portion. A method comprising the above- mentioned activation, which is installed in the memory. 21. The method of claim 21 , wherein activating the plate portion comprises applying a first voltage to the plate wire coupled to the plate portion. To connect the target memory cell to the digit wire extending in the first direction, a first voltage is applied to the word wire coupled to the memory cell disposed on the plate portion. 21. The method of claim 21 . 23. The method of claim 23 , further comprising determining a logical value associated with the target memory cell based on a second voltage on the digit line. 23. The method of claim 23 , further comprising applying a second voltage to the digit line to set a logical value associated with the target memory cell. A second set of segmentation lines extending in a first direction and a second set perpendicular to the first direction, which are at least three plate portions separated by a plurality of segmentation lines. Each of the at least three plate portions is under a separate array of memory cells, each array having multiple memory cells, each with a second set of segmentation lines extending in the direction of. The cell comprises the strong dielectric capacitor, said at least three plate portions, and
A single plate driver component comprising a plurality of plate drivers coupled to said plurality of plate portions by individual plate wires of one or more plate wires , each of said plurality of plate drivers. With the single plate driver component, which is installed adjacent to the second side of at least three plate portions .
A controller that electronically communicates with the plate driver component to the device.
Identify the location of the target memory cell
One of the plurality of plate portions corresponding to the location of the target memory cell is activated, and the plate portion is separated from at least two other plate portions by individual segmentation lines, and the segmentation is performed. The line comprises a first set of segmentation lines extending in the green direction, each of the plate portions under a separate array of memory cells, each array via one of a plurality of digit lines. It comprises a plurality of memory cells coupled to the sensing components, each memory cell comprising a dielectric capacitor, wherein the sensing component is installed adjacent to each first side of the plate portion. , The single plate driver component is placed adjacent to each second side of the plate portion , said activation.
An electronic memory device with a controller that is capable of operating in the same way. The controller may further operate to cause the device to apply a first voltage to the word line coupled to the target memory cell in order to connect the target memory cell to the digit line. 26. The apparatus according to claim 26 . 27. The device of claim 27 , wherein the controller is further operable to cause the device to determine a logical value associated with the target memory cell based on a second voltage on the digit line. 27. The controller is further operable to cause the device to apply a second voltage to the digit line in order to set a logical value associated with the target memory cell. Equipment. A means to determine the location of the target memory cell ,
To activate the plate portion of the target memory cell corresponding to said location by a plate driver among multiple plate drivers installed within a single plate driver component. As a means, the plate portion is separated from at least two other plate portions by separate segmentation lines, the segmentation line comprising a first set of vertically extending segmentation lines , each of the plate portions. Underneath a separate array of memory cells, each array has multiple memory cells coupled to sensing components via one of multiple digit lines, and each memory cell is a capacitor. A body capacitor is provided, the sensing component is installed adjacent to each first side of the plate portion, and the single plate driver is adjacent to each second side of the plate portion. A device provided with means for activating the memory. 30. The apparatus of claim 30 , further comprising means for setting one of the at least two other plate portions to a deactivated state. 30. The apparatus of claim 30 , wherein the means for activating the plate portion comprises means for applying a first voltage to the plate wire coupled to the plate portion. Means for applying a first voltage to a word line coupled to a memory cell disposed on a plate portion to connect the target memory cell to the vertically extending digit line. 30. The apparatus according to claim 30 . 33. The apparatus of claim 33 , further comprising means for determining a logical value associated with the target memory cell based on a second voltage on the digit line. 33. The apparatus of claim 33 , further comprising means for applying a second voltage to the digit line to set a logical value associated with the target memory cell.

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