JP7068044B2 - Board processing method and board processing equipment - Google Patents

Description

The present invention relates to a substrate processing method and a substrate processing apparatus. The substrates to be processed include, for example, semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, optomagnetic disk substrates, and photomasks. Substrates, ceramic substrates, solar cell substrates, etc. are included.

Conventionally, a high-temperature SPM (sulfuric acid / hydrogen peroxide mixture) containing H ₂ SO ₄ (sulfuric acid) and H ₂ O ₂ (hydrogen peroxide solution) is supplied to the surface of the substrate. Therefore, a method of removing the resist from the surface of the substrate has been proposed (see, for example, Patent Document 1 below). Such a single-wafer type substrate processing apparatus that performs processing using SPM makes the substrate substantially horizontal. It includes a spin chuck that is held and rotated by the spin chuck and a nozzle for supplying a processing liquid to the substrate rotated by the spin chuck. In the substrate processing apparatus, high temperature SPM is applied to the substrate held by the spin chuck. The supplied SPM step is executed. After that, the rinsing step in which the rinse liquid is supplied to the substrate is executed.

Japanese Unexamined Patent Publication No. 2010-10422

After the SPM process of Patent Document 1, SPM is present on the surface of the substrate. When the rinsing liquid is supplied to the surface of the substrate in the rinsing step executed after the SPM step, the SPM existing on the surface of the substrate reacts with the rinsing liquid, and a large amount of SPM fume may be generated. .. When the atmosphere containing SPM fume flows out of the processing cup through the upper opening of the processing cup and diffuses into the chamber, the atmosphere containing SPM fume becomes particles and adheres to the substrate to contaminate the substrate. Or it may contaminate the inner wall of the chamber. Therefore, it is desirable to suppress or prevent the atmosphere containing the fume of SPM from diffusing to the surroundings.

Further, the temperature of SPM rises to a temperature higher than the liquid temperature of sulfuric acid due to the large reaction heat accompanying the reaction between sulfuric acid and the hydrogen peroxide solution. Therefore, when a low-temperature rinse solution is supplied to the surface of the substrate which has become hot due to the supply of SPM after the supply of SPM to the surface of the substrate is completed, the surface temperature of the substrate drops sharply and is formed on the surface of the substrate. It sometimes gave a heat shock to the pattern that was used. This heat shock is considered to be one of the causes of the pattern collapse.

One of the objects of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing diffusion of SPM containing a fume to the surroundings.
Another object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing the generation of heat shock associated with the supply of the rinsing liquid, thereby suppressing or preventing the damage to the surface of the substrate. It is to be.

The present invention follows the SPM step of supplying SPM to the surface of the substrate held in a horizontal position by the substrate holding unit with the surface of the substrate facing upward, and the end of the SPM step. By rotating the substrate around the axis of rotation passing through the central portion of the substrate without supplying SPM to the surface of the substrate, SPM is discharged from the surface of the substrate, and the surface of the substrate is not dried to the extent that the surface of the substrate is not dried. Provided is a substrate processing method including an SPM reduction step of reducing the amount of SPM present on the surface, and a rinsing step of supplying a rinse liquid containing water to the surface of the substrate after the SPM reduction step.

By supplying the rinse liquid to the high temperature SPM, a large amount of fume may be generated around the surface of the substrate.
According to this method, following the end of the SPM process and prior to the start of the rinsing process, the substrate is rotated without supplying the SPM to the surface of the substrate, and the SPM is discharged from the surface of the substrate. This makes it possible to reduce the amount of high temperature SPM present on the surface of the substrate to the extent that the surface of the substrate is not dried prior to the start of the rinsing process. Since the rinsing step is started after reducing the amount of high-temperature SPM present on the surface of the substrate, the amount of SPM fume generated around the surface of the substrate in the rinsing step can be suppressed. As a result, it is possible to suppress the diffusion of the SPM including the fume to the surroundings.

Further, the temperature of the substrate is lowered by reducing the amount of high-temperature SPM present on the surface of the substrate. In addition, the rotation (idle) of the substrate increases the contact area between the substrate and the surrounding atmosphere per unit time. These cool the substrate. Therefore, the rinsing process can be started in a state where the temperature is lower than that at the end of the SPM process. Therefore, it is possible to suppress the occurrence of heat shock due to the supply of the rinsing liquid, and thereby it is possible to suppress or prevent the damage to the surface of the substrate.

The SPM step may supply heated SPM. The SPM reduction step may be the SPM reduction low temperature step of lowering the temperature of the substrate.
Further, the SPM reduction step is a step of reducing the amount of SPM existing on the surface of the substrate until the SPM existing on the surface of the substrate does not form a liquid film, and a liquid is applied to the surface of the substrate. It may include a step of not supplying.
In one embodiment of the invention, the substrate processing method is a liquid lower than the SPM supplied to the surface of the substrate on the back surface of the substrate opposite to the front surface in parallel with the SPM reduction step. It further comprises a backside coolant supply step of supplying a warm coolant.
According to this method, the coolant is supplied to the back surface of the substrate in parallel with the SPM reduction step (back surface coolant supply step). Therefore, in the SPM reduction step, the SPM existing on the surface of the substrate can be cooled. Therefore, the temperature of the SPM existing on the surface of the substrate at the start of the rinsing process can be lowered. As the temperature of the SPM increases, the amount of fume generated in the SPM increases. As a result, the amount of SPM fume generated around the surface of the substrate in the rinsing process can be further suppressed.

Further, since the coolant is supplied to the back surface of the substrate, the temperature of the substrate can be lowered prior to the start of the rinsing process. Therefore, the rinsing process can be started after the temperature of the substrate is sufficiently lowered. As a result, the occurrence of heat shock due to the supply of the rinsing liquid can be further suppressed, and thereby the damage to the surface of the substrate can be more effectively suppressed or prevented.
In one embodiment of the present invention, the substrate processing method includes a central portion discharge step in which the back surface coolant supply step discharges the coolant toward the central portion of the back surface of the substrate, and the central portion discharge. In parallel with the process, the peripheral portion discharging step of discharging the coolant toward the peripheral edge portion of the back surface of the substrate is included.

According to this method, the coolant is supplied to the central portion of the back surface of the substrate and the peripheral portion of the back surface of the substrate in parallel with the SPM reduction step. As a result, the substrate can be cooled uniformly.
The cooling liquid may have a liquid temperature higher than that of the rinsing liquid.
According to this method, a cooling liquid having a liquid temperature higher than that of the rinse liquid is supplied to the substrate before the rinse liquid is supplied to the substrate. Therefore, the temperature of the substrate can be lowered stepwise by sequentially cooling with the cooling liquid and cooling with the rinsing liquid. As a result, the occurrence of heat shock can be further suppressed.

The cooling liquid may have the same liquid temperature as the rinsing liquid.
According to this method, since the cooling liquid supplied to the back surface of the substrate has the same temperature as the rinsing liquid, the liquid temperature of the SPM existing on the front surface of the substrate can be further lowered. Since the rinsing step is started after the temperature of the SPM liquid existing on the surface of the substrate is sufficiently lowered, the amount of SPM fume generated around the surface of the substrate in the rinsing step can be further suppressed.

In one embodiment of the present invention, the rinsing step is started after the temperature of the surface of the substrate has been lowered to a predetermined low temperature by the SPM reducing step .
According to this method, the rinsing step is started after the temperature has been lowered to a predetermined low temperature. Therefore, in the SPM reduction step, the SPM existing on the surface of the substrate can be cooled. Therefore, the temperature of the SPM existing on the surface of the substrate at the start of the rinsing process can be lowered. As a result, the amount of SPM fume generated around the surface of the substrate in the rinsing process can be further suppressed.

In one embodiment of the present invention, the substrate processing method further includes a temperature detection step of detecting the temperature of the substrate by a temperature sensor in parallel with the SPM reduction step. Then , when the detected temperature reaches the predetermined low temperature, the SPM reduction step is completed and the rinsing step is started .
According to this method, the rinsing step is started when the temperature detected by the temperature sensor reaches the predetermined low temperature. As a result, the rinsing step can be started after the temperature of the SPM existing on the surface of the substrate has been surely lowered to a predetermined low temperature. As a result, the amount of SPM fume generated around the surface of the substrate in the rinsing process can be further suppressed.

In one embodiment of the invention, the substrate processing method further comprises a first substrate rotation step of rotating the substrate about the axis of rotation in parallel with the SPM step. The SPM reduction step includes a step of rotating the substrate at a rotation speed that is the same as that of the first substrate rotation step or faster than that of the first substrate rotation step.

According to this method, in the SPM reduction step, the substrate is rotated at the same rotation speed as the first substrate rotation step or faster than the first substrate rotation step. Therefore, the centrifugal force acting on the SPM existing on the surface of the substrate increases. This makes it possible to promote the emission of SPM from the surface of the substrate.
In one embodiment of the present invention, the substrate processing method includes a second substrate rotation step of rotating the substrate around the rotation axis, a SPM reduction step, and the rinsing step in parallel with the rinsing step. In parallel with the guard internal exhaust step of having a cylindrical guard surrounding the substrate holding unit and exhausting the inside of the processing cup accommodating the substrate holding unit, and in parallel with the rinsing step, the said In parallel with the first height maintenance step of maintaining the guard at the first height position and the SPM reduction step, the guard is held at a second height position higher than the first height position. Includes a second height maintenance step to maintain.

According to this method, the inside of the processing cup is exhausted in parallel with the SPM reduction step and the rinsing step. Further, in parallel with the SPM reduction step, the guard is maintained at the second height position. Further, it is maintained at the first height position in parallel with the rinsing step after the SPM reduction step.
When supplying SPM to the surface of the substrate, a large amount of SPM fume is generated around the surface of the substrate. Further, also in the rinsing step, a fume of SPM is generated around the surface of the substrate due to the reaction between the SPM existing on the surface of the substrate and the rinsing liquid. In the SPM reduction step, a guard is arranged at the second height position and the inside of the processing cup is exhausted. By keeping the supply of SPM stopped in the SPM reduction step, the amount of SPM fume present around the substrate is reduced. That is, it is possible to start supplying the rinse liquid to the surface of the substrate in a state where the amount of SPM fume existing around the surface of the substrate is reduced. Therefore, even if the SPM fume is generated due to the supply of the rinse liquid to the surface of the substrate, the atmosphere containing the SPM fume does not flow out of the processing cup. This makes it possible to suppress the diffusion of the atmosphere containing the SPM fume to the surroundings.

In one embodiment of the invention, the substrate processing method further comprises the step of supplying SC1 to the surface of the substrate after the rinsing step.
According to this method, the resist residue adhering to the surface of the substrate can be satisfactorily removed. In addition, the sulfur component remaining on the surface of the substrate can be satisfactorily removed.

In the present invention, a substrate holding unit that holds the substrate in a horizontal position and a substrate held by the substrate holding unit with the surface of the substrate facing upward pass through the center of the substrate. Water is applied to the rotating unit for rotating around, the SPM supply unit for supplying SPM to the surface of the substrate held by the substrate holding unit, and the surface of the substrate held by the substrate holding unit. Provided is a substrate processing apparatus including a rinse liquid supply unit for supplying the containing rinse liquid, and a control device for controlling the rotation unit, the SPM supply unit, and the rinse liquid supply unit. Then , following the SPM step of supplying SPM to the surface of the substrate by the SPM supply unit and the end of the SPM step, the control device does not supply SPM to the surface of the substrate, and the center of the substrate. By rotating the substrate by the rotating unit around the rotation axis passing through the unit, SPM is discharged from the surface of the substrate, and the amount of SPM present on the surface of the substrate is reduced to the extent that the surface of the substrate is not dried. After the SPM reduction step and the SPM reduction step, a rinsing step of supplying the rinsing liquid to the surface of the substrate by the rinsing liquid supply unit is executed .

By supplying the rinse liquid to the high temperature SPM, a large amount of fume may be generated around the surface of the substrate.
According to this configuration, following the end of the SPM process and prior to the start of the rinsing process, the substrate is rotated without supplying the SPM to the surface of the substrate, and the SPM is discharged from the surface of the substrate. This makes it possible to reduce the amount of high temperature SPM present on the surface of the substrate to the extent that the surface of the substrate is not dried prior to the start of the rinsing process. Since the rinsing step is started after reducing the amount of high-temperature SPM present on the surface of the substrate, the amount of SPM fume generated around the surface of the substrate in the rinsing step can be suppressed. As a result, it is possible to suppress the diffusion of the SPM including the fume to the surroundings.

Further, the temperature of the substrate is lowered by reducing the amount of high-temperature SPM present on the surface of the substrate. In addition, the rotation (idle) of the substrate increases the contact area between the substrate and the surrounding atmosphere per unit time. These cool the substrate. Therefore, the rinsing process can be started in a state where the temperature is lower than that at the end of the SPM process. Therefore, it is possible to suppress the occurrence of heat shock due to the supply of the rinsing liquid, and thereby it is possible to suppress or prevent the damage to the surface of the substrate.

In one embodiment of the present invention, the substrate processing apparatus supplies a cooling liquid having a liquid temperature lower than the SPM supplied to the front surface of the substrate to the back surface of the substrate opposite to the front surface. Further includes a liquid supply unit. Then , the control device further executes the back surface coolant supply step of supplying the coolant by the coolant supply unit in parallel with the SPM reduction step .

According to this configuration, the coolant is supplied to the back surface of the substrate in parallel with the SPM reduction step (back surface coolant supply step). Therefore, in the SPM reduction step, the SPM existing on the surface of the substrate can be cooled. Therefore, the temperature of the SPM existing on the surface of the substrate at the start of the rinsing process can be lowered. As the temperature of the SPM increases, the amount of fume generated in the SPM increases. As a result, the amount of SPM fume generated around the surface of the substrate in the rinsing process can be further suppressed.

Further, since the coolant is supplied to the back surface of the substrate, the temperature of the substrate can be lowered prior to the start of the rinsing process. Therefore, the rinsing process can be started after the temperature of the substrate is sufficiently lowered. As a result, the occurrence of heat shock due to the supply of the rinsing liquid can be further suppressed, and thereby the damage to the surface of the substrate can be more effectively suppressed or prevented.
In one embodiment of the present invention, the coolant supply unit is held by the substrate holding unit and a central discharge port facing the center of the back surface of the substrate held by the substrate holding unit. It has a peripheral edge discharge port facing the peripheral edge portion of the back surface of the substrate, and the control device has the coolant from the central portion discharge port toward the central portion of the back surface of the substrate in the back surface coolant supply step. In parallel with the central portion discharging process, the peripheral portion discharging step of discharging the cooling liquid from the peripheral portion discharging port toward the peripheral edge portion of the back surface of the substrate is executed . ..

According to this configuration, the coolant is supplied to the central portion of the back surface of the substrate and the peripheral portion of the back surface of the substrate in parallel with the PM reduction step. As a result, the substrate can be cooled uniformly.
The cooling liquid may have a liquid temperature higher than normal temperature.
According to this configuration, a cooling liquid having a liquid temperature higher than that of the rinse liquid is supplied to the substrate before the rinse liquid is supplied to the substrate. Therefore, the temperature of the substrate can be lowered stepwise by sequentially cooling with the cooling liquid and cooling with the rinsing liquid. As a result, the occurrence of heat shock can be further suppressed.

The cooling liquid may have the same liquid temperature as the rinsing liquid.
According to this configuration, since the cooling liquid supplied to the back surface of the substrate has the same temperature as the rinsing liquid, the liquid temperature of the SPM existing on the front surface of the substrate can be further lowered. Since the rinsing step is started after the temperature of the SPM liquid existing on the surface of the substrate is sufficiently lowered, the amount of SPM fume generated around the surface of the substrate in the rinsing step can be further suppressed.

In one embodiment of the present invention, the control device starts the rinsing step after the temperature of the substrate has been lowered to a predetermined low temperature by the SPM reducing step.
According to this configuration, the rinsing process is started after the temperature has been lowered to a predetermined low temperature. Therefore, in the SPM reduction step, the SPM existing on the surface of the substrate can be cooled. Therefore, the temperature of the SPM existing on the surface of the substrate at the start of the rinsing process can be lowered. As a result, the amount of SPM fume generated around the surface of the substrate in the rinsing process can be further suppressed.

In one embodiment of the invention, the substrate processing apparatus further comprises a temperature sensor for detecting the temperature of the substrate. Then , the control device further executes a temperature detection step of detecting the temperature of the substrate by the temperature sensor in parallel with the SPM reduction step. Further , when the control device is detected and the temperature reaches the predetermined low temperature, the SPM reduction step is terminated and the rinsing step is started .

According to this configuration, the rinsing step starts when the temperature detected by the temperature sensor reaches the predetermined low temperature. As a result, the rinsing step can be started after the temperature of the SPM existing on the surface of the substrate has been surely lowered to a predetermined low temperature. As a result, the amount of SPM fume generated around the surface of the substrate in the rinsing process can be further suppressed.
In one embodiment of the invention, the control device further performs a first substrate rotation step of rotating the substrate about the rotation axis in parallel with the SPM step. Then , the control device executes the step of rotating the substrate in the SPM reduction step, which is the same as the first substrate rotation step or at a rotation speed faster than the first substrate rotation step .

According to this configuration, in the SPM reduction step, the substrate is rotated at the same rotation speed as the first substrate rotation step or faster than the first substrate rotation step. Therefore, the centrifugal force acting on the SPM existing on the surface of the substrate increases. This makes it possible to promote the emission of SPM from the surface of the substrate.
In one embodiment of the present invention, the substrate processing apparatus surrounds the substrate holding unit and has a processing cup having a guard for capturing the processing liquid discharged from the substrate held by the substrate holding unit. Further includes an exhaust unit for exhausting the inside of the processing cup and a guard elevating unit for raising and lowering the guard. Then , the control device further controls the exhaust unit and the guard elevating unit, and the control device rotates the substrate around the rotation axis in parallel with the rinsing process. In parallel with the SPM reduction step and the rinsing step, the inside of the guard is exhausted, and in parallel with the rinsing step, the guard is maintained at the first height position. In parallel with the height maintenance step and the SPM reduction step, a second height maintenance step of maintaining the guard at a second height position higher than the first height position is executed . ..

According to this configuration, the inside of the processing cup is exhausted in parallel with the SPM reduction step and the rinsing step. Further, in parallel with the SPM reduction step, the guard is maintained at the second height position. Further, it is maintained at the first height position in parallel with the rinsing step after the SPM reduction step.
When supplying SPM to the surface of the substrate, a large amount of SPM fume is generated around the surface of the substrate. Further, also in the rinsing step, a fume of SPM is generated around the surface of the substrate due to the reaction between the SPM existing on the surface of the substrate and the rinsing liquid. In the SPM reduction step, a guard is arranged at the second height position and the inside of the processing cup is exhausted. By keeping the supply of SPM stopped in the SPM reduction step, the amount of SPM fume present around the substrate is reduced. That is, it is possible to start supplying the rinse liquid to the surface of the substrate in a state where the amount of SPM fume existing around the surface of the substrate is reduced. Therefore, even if the SPM fume is generated due to the supply of the rinse liquid to the surface of the substrate, the atmosphere containing the SPM fume does not flow out of the processing cup. This makes it possible to suppress the diffusion of the atmosphere containing the SPM fume to the surroundings.

In one embodiment of the invention, the substrate processing apparatus further comprises an SC1 supply unit for supplying SC1 to the substrate held in the substrate holding unit, wherein the control device is subjected to the rinsing step. The step of supplying SC1 to the surface of the substrate is further executed .
According to this configuration, the resist residue adhering to the surface of the substrate can be satisfactorily removed. In addition, the sulfur component remaining on the surface of the substrate can be satisfactorily removed.

FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus. FIG. 3 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus. FIG. 4 is an enlarged cross-sectional view showing the surface of the substrate W to be processed by the substrate processing apparatus. FIG. 5 is a flow chart for explaining a first substrate processing example by the processing unit. 6A and 6B are schematic diagrams for explaining the SPM process and the SPM reduction process. 6C and 6D are schematic diagrams for explaining the SPM reduction step and the first rinsing step. 6E and 6F are schematic diagrams for explaining the SC1 process and the drying process. FIG. 7 is a schematic diagram for explaining the SPM reduction step according to the second substrate processing example by the processing unit. FIG. 8 is a schematic diagram for explaining the SPM reduction step according to the third substrate processing example by the processing unit. FIG. 9 is a flowchart at the time of transition from the SPM reduction step to the first rinsing step according to the third substrate processing example. FIG. 10 is a schematic cross-sectional view for explaining a configuration example of a bottom nozzle of the processing unit according to the second embodiment of the present invention. FIG. 11 is a schematic plan view for explaining a configuration example of the lower surface nozzle.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
<First Embodiment>
FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing device 1 is a single-wafer processing device that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate.

The substrate processing apparatus 1 is a load port on which a plurality of processing units 2 for processing the substrate W with a processing liquid and a rinsing liquid and a substrate container C for accommodating a plurality of substrates W processed by the processing unit 2 are mounted. The LP includes an indexer robot IR and a substrate transfer robot CR that convey the substrate W between the load port LP and the processing unit 2, and a control device 3 that controls the substrate processing device 1. The indexer robot IR transfers the substrate W between the substrate container C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the indexer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, a similar configuration.

FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.
The processing unit 2 holds a box-shaped chamber 4 having an internal space and one substrate W in a horizontal posture in the chamber 4, and holds the substrate W around a vertical rotation axis A1 passing through the center of the substrate W. Sulfate containing SPM (H ₂ SO ₄ (sulfuric acid) and H ₂ O ₂ (hydrogen peroxide solution) on the surface Wa of the rotating spin chuck (substrate holding unit) 5 and the substrate W held by the spin chuck 5). SC1 (NH ₄ OH and H ₂ O ₂ ) is applied to the surface Wa of the substrate W held by the SPM supply unit 6 for supplying the hydrogen peroxide solution (sulfuric acid / hydrogen peroxide mixture) and the spin chuck 5. The SC1 supply unit 7 for supplying (mixed solution containing hydrogen peroxide), the blocking member 8 facing the surface Wa (upper surface) of the substrate W held by the spin chuck 5, and the inside of the blocking member 8 are inserted vertically. Then, the central shaft nozzle 9 for discharging the processing fluid containing the rinse liquid and the rinse liquid for supplying the central shaft nozzle 9 toward the central portion of the upper surface of the substrate W held by the spin chuck 5. The rinse liquid supply unit 10, the lower surface nozzle 11 that discharges the processing liquid toward the center of the lower surface of the substrate W (the back surface Wb of the substrate W) held by the spin chuck 5, and the tubular shape surrounding the spin chuck 5. Includes processing cup 12 and.

The chamber 4 includes a box-shaped partition wall 14, an FFU (fan filter unit) 15 as a blower unit that sends clean air from the upper part of the partition wall 14 to the inside of the partition wall 14 (corresponding to the inside of the chamber 4), and a lower portion of the partition wall 14. Includes an exhaust unit 13 for discharging gas from the chamber 4.
The FFU 15 is arranged above the partition wall 14 and is attached to the ceiling of the partition wall 14. The FFU 15 sends clean air from the ceiling of the partition wall 14 into the chamber 4. The exhaust unit 13 is connected to the bottom of the processing cup 12 via an exhaust duct 16 connected to the inside of the processing cup 12, and sucks the inside of the processing cup 12 from the bottom of the processing cup 12. The FFU 15 and the exhaust unit 13 form a downflow in the chamber 4.

As the spin chuck 5, a holding type chuck that sandwiches the substrate W in the horizontal direction and holds the substrate W horizontally is adopted. Specifically, the spin chuck 5 includes a spin motor (rotating unit) 17, a rotating shaft 18 integrated with a drive shaft of the spin motor 17, and a disk mounted substantially horizontally on the upper end of the rotating shaft 18. Includes a spin base 19 and the like.
The spin base 19 includes a horizontal circular upper surface 19a having an outer diameter larger than the outer diameter of the substrate W. On the upper surface 19a, a plurality of (three or more, for example, six) holding members 20 are arranged on the peripheral edge thereof. The plurality of sandwiching members 20 are arranged, for example, at equal intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the upper peripheral peripheral portion of the spin base 19.

The SPM supply unit 6 is a nozzle moving unit 23 that moves the SPM nozzle 21 by moving the SPM nozzle 21, the nozzle arm 22 to which the SPM nozzle 21 is attached at the tip, and the nozzle arm 22 (see FIG. 3). And include.
The SPM nozzle 21 is, for example, a straight nozzle that discharges SPM as an example of SPM in a continuous flow state. The SPM nozzle 21 is attached to the nozzle arm 22 in a vertical posture in which SPM is discharged in a vertical direction, an inclined direction, or a horizontal direction toward the upper surface of the substrate W, for example. The nozzle arm 22 extends in the horizontal direction.

The nozzle movement unit 23 horizontally moves the SPM nozzle 21 by horizontally moving the nozzle arm 22 around the swing axis. The nozzle moving unit 23 has a configuration including a motor and the like. The nozzle moving unit 23 is located between a processing position where the SPM discharged from the SPM nozzle 21 lands on the upper surface of the substrate W and a retracted position where the SPM nozzle 21 is set around the spin chuck 5 in a plan view. The SPM nozzle 21 is moved horizontally. In this embodiment, the processing position is, for example, the central position where the SPM discharged from the SPM nozzle 21 lands on the central portion of the upper surface of the substrate W.

The SPM supply unit 6 further includes a sulfuric acid supply unit 24 that supplies H ₂ SO ₄ to the SPM nozzle 21, and a hydrogen peroxide solution supply unit 25 that supplies H ₂ O ₂ to the SPM nozzle 21.
The sulfuric acid supply unit 24 includes a sulfuric acid pipe 26 having one end connected to the SPM nozzle 21, and a sulfuric acid valve 27 for opening and closing the sulfuric acid pipe 26. H ₂ SO ₄ maintained at a predetermined high temperature is supplied to the sulfuric acid pipe 26 from the sulfuric acid supply source. The sulfuric acid supply unit 24 may further include a sulfuric acid flow rate adjusting valve that adjusts the opening degree of the sulfuric acid pipe 26 to adjust the flow rate of H ₂ SO ₄ flowing through the sulfuric acid pipe 26. The sulfuric acid flow rate adjusting valve includes a valve body having a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. The same applies to other flow rate adjusting valves.

The hydrogen peroxide solution supply unit 25 includes a hydrogen peroxide solution pipe 28 having one end connected to the SPM nozzle 21 and a hydrogen peroxide solution valve 29 for opening and closing the hydrogen peroxide solution pipe 28. The hydrogen peroxide solution pipe 28 is supplied with H ₂ O ₂ at room temperature (RT, about 23 ° C.) whose temperature is not adjusted from the hydrogen peroxide solution supply source. The hydrogen peroxide solution supply unit 25 further includes a hydrogen peroxide solution adjusting valve that adjusts the opening degree of the hydrogen peroxide solution piping 28 to adjust the flow rate of H ₂ O ₂ flowing through the hydrogen peroxide solution piping 28. May be.

When the sulfuric acid valve 27 and the hydrogen peroxide solution valve 29 are opened, H ₂ SO ₄ from the sulfuric acid pipe 26 and H ₂ O ₂ from the hydrogen peroxide solution pipe 28 are supplied into the casing of the SPM nozzle 21. It is sufficiently mixed (stirred) in the casing. By this mixing, H ₂ SO ₄ and H ₂ O ₂ are uniformly mixed, and the reaction between H ₂ SO ₄ and H ₂ O ₂ produces a mixed solution (SPM) of H ₂ SO ₄ and H ₂ O ₂ . Will be done. SPM contains peroxymonosulfuric acid (H ₂ SO ₅ ), which has strong oxidizing power, and is heated to a temperature higher than the temperature of H ₂ SO ₄ before mixing (100 ° C or higher, for example, 160 to 220 ° C). Be done. The generated high-temperature SPM is discharged from a discharge port opened at the tip end portion (for example, the lower end portion) of the casing of the SPM nozzle 21.

The SC1 supply unit 7 is a nozzle moving unit 32 that moves the SC1 nozzle 30 by moving the SC1 nozzle 30, the nozzle arm 31 to which the SC1 nozzle 30 is attached to the tip, and the nozzle arm 31 (see FIG. 3). And include. The nozzle movement unit 32 horizontally moves the SC1 nozzle 30 by horizontally moving the nozzle arm 31 around the swing axis. The nozzle moving unit 32 has a configuration including a motor and the like. The nozzle moving unit 32 has the SC1 nozzle 30 between the processing position where the SC1 discharged from the SC1 nozzle 30 lands on the surface Wa of the substrate W and the retracted position set around the spin chuck 5 in a plan view. Move horizontally. In other words, the processing position is the position where the jet of SC1 droplets ejected from the SC1 nozzle 30 is sprayed onto the surface Wa of the substrate W. Further, the nozzle moving unit 32 moves the SC1 nozzle 30 so that the liquid landing position of SC1 discharged from the SC1 nozzle 30 moves between the central portion of the surface Wa of the substrate W and the peripheral portion of the surface Wa of the substrate W. Move horizontally.

The SC1 nozzle 30 ejects a jet of SC1 droplets onto the surface Wa of the substrate W held by the spin chuck 5 (SC1 is ejected in a spray form). The SC1 nozzle 30 has a form of a known two-fluid nozzle (see, for example, Japanese Patent Application Laid-Open No. 2017-005230) that ejects minute droplets of SC1.
The SC1 supply unit 7 has an SC1 pipe 34 that supplies SC1 of a room temperature liquid from the SC1 supply source to the SC1 nozzle 30, an SC1 valve 35 that opens and closes the SC1 pipe 34, and a gas from the gas supply source to the SC1 nozzle 30. Further includes a gas pipe 36 for supplying and a gas valve 37 for opening and closing the gas pipe 36. As the gas supplied to the SC1 nozzle 30, an inert gas such as nitrogen gas (N ₂ ) can be exemplified as an example, but other than that, for example, dry air or clean air can be adopted.

While opening the gas valve 37 and discharging gas from the gas discharge port of the SC1 nozzle 30, the SC1 valve 35 is opened and SC1 is discharged from the liquid discharge port. As a result, the gas collides (mixes) with the SC1 in the vicinity below the SC1 nozzle 30. As a result, minute droplets of SC1 can be generated, and SC1 can be ejected in the form of a spray. The SC1 nozzle 30 may have the form of a straight nozzle that discharges the SC1 in the form of a continuous flow, instead of the form of a two-fluid nozzle.

The blocking member 8 includes a blocking plate 41 and a rotating shaft 42 rotatably provided on the blocking plate 41. The blocking plate 41 has a disk shape having a diameter substantially the same as or larger than that of the substrate W. The cutoff plate 41 has a substrate facing surface 41a formed of a circular horizontal flat surface facing the entire surface Wa of the substrate W on the lower surface thereof.
The rotary shaft 42 is rotatably provided around a rotary axis A2 (an axis that coincides with the rotary axis A1 of the substrate W) extending vertically through the center of the cutoff plate 41. The rotating shaft 42 has a cylindrical shape. The rotating shaft 42 is relatively rotatably supported by a support arm 43 extending horizontally above the blocking plate 41.

In the central portion of the blocking plate 41, a cylindrical through hole 40 that vertically penetrates the blocking plate 41 and the rotating shaft 42 is formed. A central shaft nozzle 9 is inserted vertically through the through hole 40. That is, the central shaft nozzle 9 penetrates the blocking plate 41 and the rotating shaft 42 up and down.
The central axis nozzle 9 includes a cylindrical casing that extends vertically inside the through hole 40. The lower end of the central axis nozzle 9 opens to the substrate facing surface 41a to form a discharge port 9a.

The central axis nozzle 9 is non-rotatably supported by the support arm 43 with respect to the support arm 43. The central shaft nozzle 9 moves up and down together with the blocking plate 41, the rotating shaft 42, and the support arm 43. A rinse liquid supply unit 10 is connected to the upstream end of the central shaft nozzle 9.
The rinsing liquid supply unit 10 includes a rinsing liquid pipe 44 that guides the rinsing liquid to the central shaft nozzle 9, and a rinsing liquid valve 45 that opens and closes the rinsing liquid pipe 44. The rinsing solution is, for example, water. In this embodiment, the water is either pure water (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, or ammonia water having a diluted concentration (for example, about 10 to 100 ppm). When the rinse liquid valve 45 is opened, the rinse liquid from the rinse liquid supply source is supplied from the rinse liquid pipe 44 to the central shaft nozzle 9. As a result, the rinse liquid is discharged downward from the discharge port 9a of the central shaft nozzle 9.

The inert gas supply unit 46 is connected to the central shaft nozzle 9. The Inactive gas supply unit 46 includes an inert gas pipe 47 connected to the upstream end of the central shaft nozzle 9, and an inert gas valve 48 interposed in the middle of the inert gas pipe 47. The inert gas is, for example, nitrogen gas (N ₂ ). When the inert gas valve 48 is opened, the inert gas is discharged downward from the discharge port 9a of the central shaft nozzle 9. When the inert gas valve 48 is closed, the discharge of the inert gas from the discharge port 9a is stopped.

A cutoff plate rotating unit 49 having a configuration including an electric motor or the like is coupled to the cutoff plate 41. The cutoff plate rotation unit 49 rotates the cutoff plate 41 and the rotation shaft 42 around the rotation axis A2 with respect to the support arm 43.
A blocking member elevating unit 50 having a structure including an electric motor, a ball screw, and the like is coupled to the support arm 43. The cutoff member elevating unit 50 raises and lowers the cutoff member 8 (blocking plate 41 and the rotating shaft 42) and the central shaft nozzle 9 in the vertical direction together with the support arm 43.

The cutoff member evacuation unit 50 raises the cutoff plate 41 significantly above the cutoff position (position shown in FIG. 6F) close to the upper surface of the board W in which the board facing surface 41a is held by the spin chuck 5. Move up and down between the retracted retracted positions (shown by the solid line in FIG. 2). The cutoff member elevating unit 50 can hold the cutoff plate 41 at a cutoff position, an intermediate position (positions shown in FIGS. 6C and 6D), and a retracted position. The space between the substrate facing surface 41a and the upper surface of the substrate W in the state where the blocking plate 41 is in the blocking position is not completely isolated from the surrounding space, but the surrounding space with respect to the space. There is no inflow of gas from. That is, the space is substantially isolated from the space around it.

The lower surface nozzle 11 has a single discharge port 11a facing the central portion of the lower surface (rear surface Wb) of the substrate W held by the spin chuck 5. The discharge port 11a discharges the liquid vertically upward. The discharged liquid is incident on the central portion of the lower surface of the substrate W held by the spin chuck 5 substantially perpendicularly to the central portion. A bottom surface supply pipe 51 is connected to the bottom surface nozzle 11. The bottom surface supply pipe 51 is inserted inside a rotating shaft 18 composed of a vertically arranged hollow shaft.

The rinse liquid pipe 52, the coolant pipe 53, and the SC1 pipe 54 are connected to the bottom surface supply pipe 51, respectively.
The rinse liquid pipe 52 is interposed with a rinse liquid valve 55 for opening and closing the rinse liquid pipe 52. The rinsing liquid supplied to the rinsing liquid pipe 52 is, for example, water at room temperature (RT, about 23 ° C.). In this embodiment, the water is either pure water (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, or ammonia water having a diluted concentration (for example, about 10 to 100 ppm). The lower rinse liquid supply unit 71 is configured by the rinse liquid pipe 52 and the rinse liquid valve 55.

The coolant pipe 53 is interposed with a coolant valve 56 for opening and closing the coolant pipe 53. The coolant is, for example, water at room temperature (RT, about 23 ° C.). In this embodiment, the water is either pure water (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, or ammonia water having a diluted concentration (for example, about 10 to 100 ppm). In this embodiment, the coolant supply unit 72 is configured by the coolant pipe 53 and the coolant valve 56.

The SC1 pipe 54 is interposed with an SC1 valve 57 for opening and closing the SC1 pipe 54.
When the rinse liquid valve 55 is opened with the coolant valve 56 and the SC1 valve 57 closed, the rinse liquid from the rinse liquid supply source flows to the bottom surface nozzle 11 via the rinse liquid pipe 52 and the bottom surface supply pipe 51. Will be supplied. The rinse liquid supplied to the lower surface nozzle 11 is discharged substantially vertically upward from the discharge port 11a. The rinse liquid discharged from the lower surface nozzle 11 is incident on the central portion of the lower surface of the substrate W held by the spin chuck 5 substantially perpendicularly.

When the coolant valve 56 is opened with the rinse liquid valve 55 and the SC1 valve 57 closed, the coolant from the coolant supply source flows to the bottom nozzle 11 via the coolant pipe 53 and the bottom surface supply pipe 51. Will be supplied. The coolant supplied to the lower surface nozzle 11 is discharged substantially vertically upward from the discharge port 11a. The coolant discharged from the lower surface nozzle 11 is incident on the central portion of the lower surface of the substrate W held by the spin chuck 5 substantially perpendicularly.

When the SC1 valve 57 is opened with the rinse liquid valve 55 and the coolant valve 56 closed, SC1 from the SC1 supply source is supplied to the bottom surface nozzle 11 via the SC1 pipe 54 and the bottom surface supply pipe 51. .. The SC1 supplied to the lower surface nozzle 11 is discharged substantially vertically upward from the discharge port 11a. The SC1 discharged from the lower surface nozzle 11 is incident on the central portion of the lower surface of the substrate W held by the spin chuck 5 substantially perpendicularly.

The processing cup 12 is foldable, and the guard elevating unit 66 (see FIG. 3) raises and lowers at least one of the three guards 63 to 65 to unfold and fold the processing cup 12.
The processing cup 12 individually raises and lowers a plurality of cups 61 and 62 surrounding the spin base 19, a plurality of guards 63 to 65 for receiving the processing liquid scattered around the substrate W, and a plurality of guards 63 to 65. Includes a guard elevating unit 66 (see FIG. 3). The processing cup 12 is arranged outside the outer circumference of the substrate W held by the spin chuck 5.

Each cup 61, 62 has a cylindrical shape and surrounds the spin chuck 5. The second cup 62, which is the second from the inside, is arranged outside the first cup 61. Each cup 61, 62 forms an annular groove that opens upward. A collection / drainage pipe 67 is connected to the groove of the first cup 61. The treatment liquid guided to the groove of the first cup 61 is selectively sent to the recovery equipment or the waste liquid equipment through the collection / drain pipe 67, and is processed by the equipment. A collection / drainage pipe 68 is connected to the groove of the second cup 62. The treatment liquid guided to the groove of the second cup 62 is selectively sent to the recovery equipment or the waste liquid equipment through the collection / drain pipe 68, and is processed by the equipment.

Each guard 63 to 65 has a cylindrical shape and surrounds the spin chuck 5. Each guard 63 to 65 has a cylindrical guide portion 69 that surrounds the circumference of the spin chuck 5, and a cylindrical inclination that extends diagonally upward from the upper end of the guide portion 69 toward the center side (direction approaching the rotation axis A1 of the substrate W). Including part 70. The upper end of each inclined portion 70 constitutes an inner peripheral portion of the guards 63 to 65, and has a diameter larger than that of the substrate W and the spin base 19. The three inclined portions 70 are vertically stacked, and the three guide portions 69 are coaxially arranged. The guide portion 69 (guard 63, guide portion 69 of the guard 64) can enter and exit the corresponding cups 61 and 62, respectively. That is, the processing cup 12 is foldable, and the guard elevating unit 66 raises and lowers at least one of the three guards 63 to 65 to unfold and fold the processing cup 12. The inclined portion 70 may have a linear cross-sectional shape as shown in FIG. 2, or may extend, for example, while drawing a smooth and convex arc.

The guard elevating unit 66 (see FIG. 3) has an upper position (second height position) UP in which the upper end of the guard is located above the board W and a retracted position in which the upper end of the guard is located below the board W. Each guard 63 to 65 is moved up and down between the RP and the guard. The guard elevating unit 66 can hold each guard 63 to 65 at an arbitrary position between the upper position UP and the retracted position RP. The supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where any of the guards 63 to 65 faces the peripheral end surface of the substrate W.

In the first guard facing state of the processing cup 12 (see FIGS. 6C to 6E) in which the innermost first guard 63 faces the peripheral end surface of the substrate W, all of the first to third guards 63 to 65 , The upper end of the guard is arranged at the liquid capture position (first height position) CP located above the substrate W. In the second guard facing state (not shown) of the processing cup 12 in which the second guard 64 second from the inside faces the peripheral end surface of the substrate W, the second and third guards 64 and 65 are in the liquid trapping position. It is arranged in the CP, and the first guard 63 is arranged in the evacuation position RP. In the third guard facing state of the processing cup 12 (see FIG. 6F) in which the outermost third guard 65 faces the peripheral end surface of the substrate W, the third guard 65 is arranged at the liquid capture position CP, and The first and second guards 63 and 64 are arranged at the retracted position RP. In the retracted state (see FIG. 2) in which all guards are retracted from the peripheral end surface of the substrate W, all of the first to third guards 63 to 65 are arranged in the retracted position.

Further, in the processing cup 12, in addition to the first guard facing state, the first guard capturing state (see FIGS. 6A and 6B) is further set as the state in which the first guard 63 faces the peripheral end surface of the substrate W. It is prepared. In the first guard capture state of the processing cup 12, all of the first, second and third guards 63, 64, 65 are arranged in the upper position UP set above the liquid capture position CP. .. The first guard 63 is held at the inner peripheral end (upper end) of the first guard 63 and the spin chuck 5 in a state where the first guard 63 is located at the upper position UP (that is, the first guard capture state of the processing cup 12). A large distance from the substrate W is secured.

FIG. 3 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.
The control device 3 is configured by using, for example, a microcomputer. The control device 3 has an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit. The storage unit includes a computer-readable recording medium that records a computer program executed by the arithmetic unit. The recording medium incorporates a step group so that the control device 3 may execute the first substrate processing example or the second substrate processing example described later.

The control device 3 has an exhaust unit 13, a spin motor 17, a first nozzle moving unit 23, a second nozzle moving unit 32, a blocking plate rotating unit 49, a blocking member elevating unit 50, and a guard elevating unit according to a predetermined program. It controls the operation of the unit 66 and the like. Further, the control device 3 has a sulfuric acid valve 27, a hydrogen peroxide solution valve 29, an SC1 valve 35, a gas valve 37, a rinse liquid valve 45, an inert gas valve 48, a rinse liquid valve 55, and a coolant according to a predetermined program. It controls the opening / closing operation of the valve 56, SC1 valve 57, etc.

FIG. 4 is an enlarged cross-sectional view showing the surface Wa of the substrate W to be processed by the substrate processing apparatus 1. The substrate W to be processed is, for example, a silicon wafer, and the pattern 100 is formed on the surface Wa which is the pattern forming surface thereof. The pattern 100 is, for example, a fine pattern. As shown in FIG. 4, the pattern 100 may have structures 101 having a convex shape (columnar shape) arranged in a matrix. In this case, the line width W1 of the structure 101 is provided, for example, about 10 nm to 45 nm, and the gap W2 of the pattern 100 is provided, for example, about 10 nm to several μm. The film thickness T of the pattern 100 is, for example, about 1 μm. Further, in the pattern 100, for example, the aspect ratio (ratio of the film thickness T to the line width W1) may be, for example, about 5 to 500 (typically, about 5 to 50).

Further, the pattern 100 may be a pattern in which line-shaped patterns formed by fine trenches are repeatedly arranged. Further, the pattern 100 may be formed by providing a plurality of fine holes (voids or pores) in the thin film.
The pattern 100 includes, for example, an insulating film. Further, the pattern 100 may include a conductor film. More specifically, the pattern 100 is formed of a laminated film in which a plurality of films are laminated, and may further include an insulating film and a conductor film. The pattern 100 may be a pattern composed of a monolayer film. The insulating film may be a silicon oxide film (SiO ₂ film) or a silicon nitride film (SiN film). Further, the conductor film may be an amorphous silicon film into which impurities for lowering the resistance are introduced, or may be a metal film (for example, a metal wiring film).

Further, the pattern 100 may be a hydrophilic film. As the hydrophilic film, a TEOS film (a type of silicon oxide film) can be exemplified.
FIG. 5 is a flow chart for explaining a first substrate processing example by the processing unit 2. A first substrate processing example will be described with reference to FIGS. 1 to 5. The first substrate processing example is a resist removing process for removing a resist from the upper surface (main surface) of the substrate W. A resist is deposited on the surface Wa of the substrate W (see FIG. 4) so as to cover the entire surface Wa. It is assumed that the substrate W has not been processed for ashing the resist.

When the first substrate processing example is applied to the substrate W by the processing unit 2, the substrate W after the ion implantation treatment at a high dose is carried into the chamber 4 (step S1 in FIG. 5).
The control device 3 holds the substrate W in a state where all the nozzles and the like are retracted from above the spin chuck 5 and all guards 63 to 65 are arranged at the retracted position RP. The hand H (see FIG. 1) is brought into the inside of the chamber 4. As a result, the substrate W is handed over to the spin chuck 5 with its surface Wa (device forming surface) facing upward, and is held by the spin chuck 5.

Further, this first substrate processing example is executed in a state where the inside of the processing cup 12 is sucked by the exhaust unit 13 (exhaust step in the guard). The exhaust of the exhaust unit 13 forms a downward airflow in the internal space of the chamber 4.
After the substrate W is held by the spin chuck 5, the control device 3 controls the spin motor 17 to start the rotation of the substrate W (step S2 in FIG. 5). The substrate W is increased to a predetermined liquid treatment speed (in the range of 100 to 500 rpm, for example, 300 rpm) and maintained at that liquid treatment speed. Further, the control device 3 controls the guard elevating unit 66 to raise each of the first to third guards 63 to 65 from the retracted position RP to the upper position UP. As a result, as shown in FIG. 6A, the processing cup 12 is in the first guard capture state (second height maintenance step).

When the rotation speed of the substrate W reaches the liquid processing speed, the control device 3 starts executing the SPM step (step S3 in FIG. 5) as shown in FIG. 6A (first substrate rotation step).
Specifically, the control device 3 controls the nozzle movement unit 23 to move the SPM nozzle 21 from the retracted position to the processing position. Further, the control device 3 simultaneously opens the sulfuric acid valve 27 and the hydrogen peroxide solution valve 29. As a result, H ₂ SO ₄ is supplied to the SPM nozzle 21 through the sulfuric acid pipe 26, and H ₂ O ₂ is supplied to the SPM nozzle 21 through the hydrogen peroxide solution pipe 28. H ₂ SO ₄ and H ₂ O ₂ are mixed inside the SPM nozzle 21 to generate high temperature (for example, 160 to 220 ° C.) SPM. The SPM is discharged from the discharge port of the SPM nozzle 21 and lands on the central portion of the surface Wa of the substrate W.

The SPM discharged from the SPM nozzle 21 is applied to the surface Wa of the substrate W and then flows outward along the surface Wa of the substrate W by centrifugal force. Therefore, SPM is supplied to the entire surface Wa of the substrate W, and a liquid film LF of SPM covering the entire surface Wa of the substrate W is formed on the substrate W. As a result, the resist and the SPM chemically react with each other, and the resist on the substrate W is removed from the substrate W by the SPM. The SPM that has moved to the peripheral edge of the substrate W scatters from the peripheral edge of the substrate W toward the side of the substrate W and is captured by the inner wall of the first guard 63. The captured SPM flows down along the inner wall of the first guard 63, is collected in the first cup 61, and then selectively sent to the collection facility or the waste liquid facility via the collection / drain pipe 67. Be done.

Further, in the SPM step (S3), since the SPM used is extremely high temperature (for example, 160 to 220 ° C.), a large amount of SPM fume F is generated on the surface Wa of the substrate W by supplying the SPM to the substrate W. It is generated in the surroundings and floats around the surface Wa of the substrate W.
In the SPM step (S3), when the processing cup 12 is in the first guard facing state (when the processing cup 12 is in the state shown in FIG. 6C), the height positions of the first to third guards 63 to 65 are , It is sufficient to achieve the purpose of receiving the SPM scattered from the substrate W. However, the atmosphere containing the SPM chamber F present around the surface Wa of the substrate W flows out of the processing cup 12 through the upper opening 12a of the processing cup 12 (partitioned by the upper end of the third guard 65). Therefore, it may diffuse into the inside of the chamber 4. The atmosphere containing the fume F of the SPM becomes particles and adheres to the substrate W to contaminate the substrate W or contaminate the inner wall of the partition wall 14 of the chamber 4, so such an atmosphere is the surrounding. It is not desirable to spread to. Therefore, in parallel with the SPM step (S3), the processing cup 12 is maintained in the first guard capture state.

Further, in the SPM step (S3), the control device 3 controls the nozzle moving unit 23 so that the SPM nozzle 21 faces the peripheral edge portion of the surface Wa of the substrate W and the central portion of the upper surface of the substrate W. It may be moved to and from the central position facing the. In this case, the liquid landing position of the SPM on the upper surface of the substrate W can be scanned over the entire upper surface of the substrate W. As a result, the entire upper surface of the substrate W can be uniformly processed.

When a predetermined period (for example, about 30 seconds) has elapsed from the start of SPM discharge, the SPM step (S3) is completed, and the SPM reduction step ( SPM reduction low temperature step. FIG. 5) is followed by the end of the SPM step (S3). Step S4) is started. Also in this SPM reduction step (S4), the processing cup 12 is maintained in the first guard capture state (second height maintenance step).
Specifically, the control device 3 closes the sulfuric acid valve 27 and the hydrogen peroxide solution valve 29. As a result, as shown in FIG. 6B, the ejection of SPM from the SPM nozzle 21 is stopped. After that, the control device 3 keeps the rotation speed of the substrate W at the liquid processing speed. Since the supply of SPM to the surface Wa of the substrate W is stopped and the rotation continues at the liquid processing speed, the centrifugal force due to the rotation of the substrate W receives the centrifugal force of the SPM formed on the surface Wa of the substrate W. The SPM contained in the liquid film LF is discharged to the outside of the substrate W. As a result, as shown in FIG. 6B, the thickness of the liquid film LF of SPM formed on the surface Wa of the substrate W becomes thin, and eventually the SPM existing on the surface Wa of the substrate W does not form a liquid film. become.

Further, in the SPM reduction step (S4), the control device 3 controls the nozzle moving unit 23 to return the SPM nozzle 21 to the retracted position. Further, the control device 3 controls the blocking member elevating unit 50 to move the blocking member 8 arranged at the retracting position to a rinsing processing position (position shown in FIG. 6B) set between the retracting position and the blocking position. And hold it in its rinse position.

Further, in parallel with the SPM reduction step (S4), the control device 3 supplies the cooling liquid to the central portion of the back surface Wb of the substrate W as shown in FIG. 6B. Specifically, the control device 3 opens the coolant valve 56 in synchronization with the discharge of SPM from the SPM nozzle 21. As a result, the cooling liquid is discharged upward from the discharge port 11a of the lower surface nozzle 11 and is supplied to the central portion of the back surface Wb of the substrate W. The coolant discharged from the bottom nozzle 11 is room temperature (RT) water.

The coolant supplied to the central portion of the back surface Wb of the substrate W receives centrifugal force due to the rotation of the substrate W and spreads over the entire back surface Wb of the substrate W. As a result, the coolant is supplied to the entire area of the back surface Wb of the substrate W. The coolant moving on the back surface Wb of the substrate W scatters from the peripheral edge of the substrate W toward the side of the substrate W and is captured by the inner wall of the first guard 63. The captured coolant flows down along the inner wall of the first guard 63, is collected in the first cup 61, and then is sent to the waste liquid facility via the collection / drain pipe 67.

The rotation speed of the SPM reduction step (S4) and / or the period of the SPM reduction step (S4) causes the SPM existing on the surface Wa of the substrate W to be discharged, but the surface Wa of the substrate W is not dried. Set to speed and / or duration. This is because, in the SPM reduction step (S4), particles are generated when the surface Wa of the substrate W is dried.

Further, in the SPM reduction step (S4), the first guard 63 is maintained at the upper position UP (the processing cup 12 is maintained in the first guard capture state), and the inside of the processing cup 12 is exhausted. By continuing to stop the supply of SPM in the SPM reduction step (S4), the amount of fume F of SPM existing around the surface Wa of the substrate W is reduced as compared with the SPM step (S4).

Next, as shown in FIGS. 6C and 6D, a first rinsing step (step S5 in FIG. 5) is performed in which the SPM adhering to the surface Wa of the substrate W is washed away with a rinsing solution. FIG. 6C shows an initial stage of the first rinsing step (S5), and FIG. 6D shows a stage after the initial stage of the first rinsing step (S5). In the first rinsing step (S5), the rotation speed of the substrate W is maintained at the liquid treatment speed (second substrate rotation step).

Specifically, when a predetermined period (for example, about 3.5 seconds) has elapsed from the SPM discharge stop, the control device 3 controls the guard elevating unit 66 to control the first to third guards 63 to 65. Are lowered from the upper position UP to the liquid capture position CP, respectively. As a result, as shown in FIG. 6C, the processing cup 12 is in the first guard facing state (second height maintenance step). Further, the control device 3 closes the coolant valve 56 and opens the rinse liquid valve 45 and the rinse liquid valve 55.

By opening the rinse liquid valve 45, the rinse liquid is discharged from the discharge port 9a of the central shaft nozzle 9 toward the central portion of the surface Wa of the substrate W rotating at the liquid processing speed. The rinse liquid discharged from the central shaft nozzle 9 is applied to the central portion of the surface Wa of the substrate W to which the SPM is attached. The rinse liquid that has landed on the central portion of the surface Wa of the substrate W receives the centrifugal force due to the rotation of the substrate W and flows through the surface Wa of the substrate W toward the peripheral edge portion of the substrate W. As a result, as shown in FIG. 6C, the SPM and the resist (and the resist residue) are washed away over the entire surface Wa of the substrate W. The rinse liquid that has moved to the peripheral edge of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is captured by the inner wall of the first guard 63.

Further, in the first rinsing step (S5), as shown in FIG. 6D, SPM fume F may be generated with the supply of the rinsing liquid to the surface Wa of the substrate W. However, as described above, at the end of the SPM reduction step (S4), the amount of SPM fume F existing around the surface Wa of the substrate is reduced. In this state, the supply of the rinsing liquid to the surface Wa of the substrate W is started, so that in the first rinsing step (S5), the atmosphere containing the fume F of SPM is processed through the upper opening 12a of the processing cup 12. It does not flow out of the cup 12. This makes it possible to suppress the diffusion of the atmosphere containing the fume F of SPM to the surroundings.

Further, by closing the coolant valve 56 and opening the rinse liquid valve 55, the rinse liquid is discharged upward from the discharge port 11a of the lower surface nozzle 11 and is supplied to the central portion of the back surface Wb of the substrate W. The rinsing liquid discharged from the bottom nozzle 11 is water at room temperature. That is, in this substrate processing example, the cooling liquid discharged from the lower surface nozzle 11 has the same liquid temperature as the rinsing liquid discharged from the lower surface nozzle 11.

The rinse liquid supplied to the central portion of the back surface Wb of the substrate W receives centrifugal force due to the rotation of the substrate W and spreads over the entire back surface Wb of the substrate W. As a result, as shown in FIG. 6D, the rinsing liquid is supplied to the entire area of the back surface Wb of the substrate W. The rinse liquid moving on the back surface Wb of the substrate W scatters from the peripheral edge portion of the substrate W toward the side of the substrate W. The rinse liquid scattered from the peripheral edge of the substrate W is captured by the inner wall of the first guard 63.

The rinse liquid captured on the inner wall of the first guard 63 flows down along the inner wall of the first guard 63, is collected in the first cup 61, and then is discharged through the collection / drain pipe 67. Will be sent to.
After a predetermined period (for example, about 23 seconds) has elapsed from the opening of the rinse liquid valve 45 and the rinse liquid valve 55, the control device 3 closes the rinse liquid valve 45 and the rinse liquid valve 55. As a result, the discharge of the rinse liquid from the discharge port 9a of the central axis nozzle 9 is stopped, and the discharge of the rinse liquid from the discharge port 11a of the lower surface nozzle 11 is stopped. Further, the control device 3 controls the cutoff member elevating unit 50 to raise the cutoff member 8 arranged at the rinse processing position to the retracted position and hold it at the retracted position.

Next, as shown in FIG. 6E, an SC1 step (step S6 in FIG. 5) of cleaning the surface Wa of the substrate W using SC1 is performed. Specifically, in the SC1 step (S6), the control device 3 moves the SC1 nozzle 30 from the retracted position to the processing position by controlling the nozzle moving unit 32. After that, the control device 3 opens the SC1 valve 35 and the gas valve 37. As a result, as shown in FIG. 6E, the jet of SC1 droplets is ejected from the SC1 nozzle 30. Further, the control device 3 controls the nozzle movement unit 32 in parallel with the ejection of the jet of SC1 droplets from the SC1 nozzle 30 to reciprocate the SC1 nozzle 30 between the central position and the peripheral position. (Half scan). As a result, the liquid landing position of SC1 from the SC1 nozzle 30 can be reciprocated between the central portion of the surface Wa of the substrate W and the peripheral portion of the surface Wa of the substrate W. As a result, the liquid landing position of SC1 can be scanned over the entire surface Wa of the substrate W. By supplying SC1 to the surface Wa of the substrate W, the resist residue can be removed from the surface Wa of the substrate W. Further, by supplying SC1 to the surface Wa of the substrate W, the sulfur component can be removed from the surface Wa of the substrate W. The SC1 supplied to the surface Wa of the substrate W scatters from the peripheral edge of the substrate W toward the side of the substrate W and is captured by the inner wall of the first guard 63.

Further, in the SC1 step (S6), SC1 is supplied to the back surface Wb of the substrate W in parallel with the supply of SC1 to the front surface Wa of the substrate W, as shown in FIG. 6D. Specifically, the control device 3 opens the SC1 valve 57. As a result, the SC1 is discharged upward from the discharge port 11a of the lower surface nozzle 11 and is supplied to the central portion of the back surface Wb of the substrate W. The SC1 supplied to the central portion of the back surface Wb of the substrate W receives centrifugal force due to the rotation of the substrate W and spreads over the entire back surface Wb of the substrate W. As a result, SC1 is supplied to the entire area of the back surface Wb of the substrate W. The SC1 moving on the back surface Wb of the substrate W scatters from the peripheral edge of the substrate W toward the side of the substrate W. SC1 scattered from the peripheral edge of the substrate W is captured by the inner wall of the first guard 63.

The SC1 captured on the inner wall of the first guard 63 flows down along the inner wall of the first guard 63, is collected in the first cup 61, and then enters the waste liquid facility via the collection / drain pipe 67. Sent.
Then, when a predetermined period elapses from the opening of the SC1 valve 35 and the SC1 valve 57, the control device 3 closes the SC1 valve 35 and the gas valve 37 and closes the SC1 valve 57. As a result, the jet of SC1 droplets from the SC1 nozzle 30 is stopped, and the discharge of SC1 from the discharge port 11a of the lower surface nozzle 11 is stopped. As a result, the SC1 step (S6) is completed. After that, the control device 3 controls the nozzle moving unit 32 to return the SC1 nozzle 30 to the retracted position.

Next, a second rinsing step (step S7 in FIG. 5) is performed in which the SC1 adhering to the surface Wa of the substrate W is washed away with a rinsing liquid.
Specifically, the control device 3 controls the blocking member elevating unit 50 to lower the blocking member 8 arranged at the retracted position to the rinsing processing position and hold it at the rinsing processing position.
Further, the control device 3 opens the rinse liquid valve 45. As a result, the rinse liquid is discharged from the discharge port 9a of the central axis nozzle 9 toward the central portion of the surface Wa of the substrate W rotating at the processing speed. The rinse liquid discharged from the central axis nozzle 9 is applied to the central portion of the surface Wa of the substrate W covered by the SPM, and receives centrifugal force due to the rotation of the substrate W to move the surface Wa of the substrate W to the substrate W. It flows toward the periphery. As a result, SC1 (and the resist residue) is washed away over the entire surface Wa of the substrate W. The rinse liquid that has moved to the peripheral edge of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is captured by the inner wall of the first guard 63.

Further, by opening the rinse liquid valve 55, the rinse liquid is discharged upward from the discharge port 11a of the lower surface nozzle 11 and is supplied to the central portion of the back surface Wb of the substrate W. The rinse liquid supplied to the central portion of the back surface Wb of the substrate W receives centrifugal force due to the rotation of the substrate W and spreads over the entire back surface Wb of the substrate W. As a result, the rinse liquid is supplied to the entire area of the back surface Wb of the substrate W. The rinse liquid moving on the back surface Wb of the substrate W scatters from the peripheral edge portion of the substrate W toward the side of the substrate W. The rinse liquid scattered from the peripheral edge of the substrate W is captured by the inner wall of the first guard 63.

The rinse liquid captured on the inner wall of the first guard 63 flows down along the inner wall of the first guard 63, is collected in the first cup 61, and then is discharged through the collection / drain pipe 67. Will be sent to.
After a predetermined period (for example, about 23 seconds) has elapsed from the opening of the rinse liquid valve 45 and the rinse liquid valve 55, the control device 3 closes the rinse liquid valve 45 and the rinse liquid valve 55. As a result, the discharge of the rinse liquid from the discharge port 9a of the central axis nozzle 9 is stopped, and the discharge of the rinse liquid from the discharge port 11a of the lower surface nozzle 11 is stopped.

Further, the control device 3 controls the guard elevating unit 66 to lower the first and second guards 63 and 64 from the liquid capture position CP to the evacuation position. As a result, the processing cup 12 is in the third guard facing state.
Further, the control device 3 controls the cutoff member elevating unit 50 to lower the cutoff member 8 toward the cutoff position and hold the cutoff member 8 at the cutoff position.

Next, as shown in FIG. 6F, a drying step (step S8 in FIG. 5) for drying the substrate W is performed. Specifically, in this state, the control device 3 controls the spin motor 17 to dry the substrate W at a speed higher than the rotation speed from the SPM step (S3) to the second rinsing step (S7). Accelerate to speed (eg thousands of rpm) and maintain drying speed. As a result, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W.

Further, the control device 3 controls the cutoff plate rotation unit 49 to rotate the cutoff plate 41 around the rotation axis A2. As a result, the substrate W rotates in synchronization with the rotation of the blocking plate 41. Further, the control device 3 opens the inert gas valve 48 and discharges the inert gas from the discharge port 9a.
When a predetermined time has elapsed from the start of high-speed rotation of the substrate W, the control device 3 controls the spin motor 17 to stop the rotation of the substrate W by the spin chuck 5 (step S9 in FIG. 5). The control device 3 controls the blocking member elevating unit 50 to raise the blocking member 8 and retract it to the retracted position.

Next, the substrate W is carried out from the chamber 4 (step S10 in FIG. 5). Specifically, the control device 3 causes the hand of the substrate transfer robot CR to enter the inside of the chamber 4. Then, the control device 3 causes the hand of the substrate transfer robot CR to hold the substrate W on the spin chuck 5. After that, the control device 3 retracts the hand of the substrate transfer robot CR from the chamber 4. As a result, the substrate W from which the resist has been removed from the surface Wa is carried out from the chamber 4.

As described above, according to this embodiment, the substrate W is rotated without supplying SPM to the surface Wa of the substrate W prior to the start of the first rinsing step (S5) following the end of the SPM step (S3). , SPM is discharged from the surface Wa of the substrate W (SPM reduction step (S4)). Thereby, prior to the start of the first rinsing step (S5), the amount of high-temperature SPM present on the surface Wa of the substrate W can be reduced to the extent that the surface Wa of the substrate W is not dried. Since the first rinsing step (S5) is started after reducing the amount of high-temperature SPM present on the surface Wa of the substrate W, the SPM generated around the surface Wa of the substrate W in the first rinsing step (S5). The amount of fume F can be suppressed. This makes it possible to suppress the diffusion of SPM to the surroundings including the atmosphere containing fume F. Therefore, it is possible to prevent the atmosphere containing the fume F of the SPM from becoming particles and adhering to the substrate W to contaminate the substrate W or contaminating the inner surface (inner wall) of the partition wall 14 of the chamber 4.

Further, in the SPM reduction step (S4), the temperature of the substrate W is lowered by reducing the amount of high-temperature SPM existing on the surface Wa of the substrate W. In addition, the rotation (idle) of the substrate W increases the contact area between the substrate W and the surrounding atmosphere per unit time. As a result, the substrate W is cooled. Therefore, the first rinsing step (S5) can be started in a state where the temperature is lower than that at the end of the SPM step (S3). Therefore, it is possible to suppress the generation of heat shock due to the supply of the rinsing liquid, thereby suppressing or preventing the damage to the pattern 100 formed on the surface Wa of the substrate W.

Further, in parallel with the SPM reduction step (S4), the coolant is supplied to the back surface Wb of the substrate W (back surface coolant supply step). Therefore, in the SPM reduction step (S4), the SPM existing on the surface Wa of the substrate W can be cooled. Therefore, the temperature of the SPM existing on the surface Wa of the substrate W at the start of the first rinsing step (S5) can be lowered. As the temperature of SPM increases, the amount of fume F generated in SPM increases. Thereby, the amount of fume F of SPM generated around the surface Wa of the substrate W in the first rinsing step (S5) can be further suppressed.

In particular, in this embodiment, since the cooling liquid supplied to the back surface Wb of the substrate W has the same temperature as the rinsing liquid, the liquid temperature of the SPM existing on the front surface Wa of the substrate W can be further lowered. Since the first rinsing step (S5) is started after the liquid temperature of SPM existing on the surface Wa of the substrate W is sufficiently lowered, it is generated around the surface Wa of the substrate W in the first rinsing step (S5). The amount of fume F in SPM can be further suppressed.

Further, in the back surface coolant supply step, since the coolant is supplied to the back surface Wb of the substrate W, the temperature of the substrate W can be lowered prior to the start of the first rinsing step (S5). Therefore, the first rinsing step (S5) can be started after the temperature of the substrate W is sufficiently lowered. As a result, the occurrence of heat shock due to the supply of the rinsing liquid can be further suppressed, and thereby the damage to the surface Wa of the substrate W can be more effectively suppressed or prevented.

Further, in parallel with the SPM reduction step (S4), the first guard 63 is maintained in the upper position UP (the processing cup 12 is maintained in the first guard capture state). Further, in parallel with the SPM reduction step (S4) and the first rinsing step (S5), the inside of the first guard 63 is exhausted.
In the SPM reduction step (S4), the first guard 63 is maintained at the upper position UP (the processing cup 12 is maintained in the first guard capture state), and the inside of the processing cup 12 is exhausted. By continuing to stop the supply of SPM in the SPM reduction step (S4), the amount of fume F of SPM existing around the surface Wa of the substrate W is reduced. That is, the supply of the rinse liquid to the surface Wa of the substrate W can be started in a state where the amount of the fume F of SPM existing around the surface Wa of the substrate is reduced. Therefore, even if the SPM fume F is generated due to the supply of the rinse liquid to the surface Wa of the substrate W in the first rinsing step (S5), the atmosphere containing the SPM fume F passes through the upper opening 12a. It does not flow out of the processing cup 12. This makes it possible to suppress the diffusion of the atmosphere containing the fume F of SPM to the surroundings.

FIG. 7 is a schematic diagram for explaining the SPM reduction step (S4) according to the second substrate processing example.
The difference between the second substrate processing example and the first substrate processing example is that in the backside coolant supply step executed in parallel with the SPM reduction step (S4), the liquid is higher than the normal temperature, not the water at the normal temperature. The point is that hot water (HOT DIW) having a temperature (about 40 ° C. to about 60 ° C.) is supplied as a cooling liquid to the back surface Wb of the substrate W.

In this case, in the first rinsing step (S5) executed after the SPM reduction step (S4), the rinsing liquid supplied to the back surface Wb of the substrate W is, for example, normal temperature. That is, in this substrate processing example, the cooling liquid discharged from the lower surface nozzle 11 has a higher liquid temperature than the rinsing liquid discharged from the lower surface nozzle 11.
In other respects, the second substrate processing example is common to the first substrate processing example.

According to the second substrate processing example, before the rinse liquid is supplied to the substrate W, a cooling liquid having a liquid temperature higher than that of the rinse liquid is supplied to the substrate W. Therefore, the temperature of the substrate W can be lowered stepwise by sequentially cooling with the cooling liquid and cooling with the rinsing liquid. As a result, heat shock can be further suppressed.
FIG. 8 is a schematic diagram for explaining the SPM reduction step (S4) according to the third substrate processing example. FIG. 9 is a flowchart at the time of transition from the SPM reduction step (S4) to the first rinsing step (S5).

As shown in FIG. 8, the processing unit 2 may further include a temperature sensor 102 that detects the temperature of the surface Wa of the substrate W. The temperature sensor 102 is, for example, a radiation thermometer. The detection output from the temperature sensor 102 is input to the control device 3 (see FIG. 3 and the like).
During the SPM reduction step (S4), the control device 3 constantly monitors the detection output of the temperature sensor 102 (temperature detection step; step T1 in FIG. 9).

Then, when the detection temperature drops to the threshold value (predetermined low temperature) (YES in step T2 of FIG. 9), the control device 3 opens the rinse liquid valve 45 and the rinse liquid valve 55 to open the central axis nozzle. Discharge of the rinse liquid from the 9 and the lower surface nozzle 11 is started (step T3 in FIG. 9). As a result, the SPM reduction step (S4) is completed, and the process proceeds to the first rinsing step (S5) (step T4 in FIG. 9). On the other hand, when the detection temperature reaches the threshold value (NO in step T2 of FIG. 9), the process of FIG. 9 is returned, and this process is repeatedly executed (looped).

That is, the process does not shift to the first rinsing step (S5) until the detection temperature drops to the threshold value, and the SPM reduction step (S4) is continued. Then, when the detection temperature reaches the threshold value, the SPM reduction step (S4) is completed and the first rinsing step (S5) is started.
According to this substrate processing example, when the temperature detected by the temperature sensor 102 reaches the threshold value, the first rinsing step (S5) is started. As a result, the first rinsing step (S5) can be started after the temperature of the SPM existing on the surface Wa of the substrate W is surely lowered to a low temperature. Thereby, the amount of fume F of SPM generated around the surface Wa of the substrate W in the first rinsing step (S5) can be further suppressed. This makes it possible to suppress or prevent particle contamination of the substrate W due to the fume F of SPM.
<Second embodiment>
FIG. 10 is a schematic cross-sectional view for explaining a configuration example of the lower surface nozzle 211 of the processing unit 202 according to the second embodiment of the present invention. FIG. 11 is a schematic plan view for explaining a configuration example of the lower surface nozzle 211.

The processing unit 202 includes a bottom surface nozzle 211 having the form of a bar nozzle instead of the bottom surface nozzle 11 having a single discharge port 11a. As shown in FIGS. 10 and 11, the bottom surface nozzle 211 is a bar-shaped (bar-shaped) nozzle portion 204 extending horizontally from the central portion of the substrate W to the peripheral edge portion of the substrate W along the radial direction DL of the substrate W. including. A plurality of discharge ports 205 for discharging the cooling liquid are opened on the upper surface of the nozzle portion 204. The plurality of discharge ports 205 are arranged along the radial direction DL of the substrate W. The plurality of discharge ports 205 include a central portion discharge port 205a facing the central portion of the back surface Wb of the substrate W and a peripheral edge portion discharge port 205b facing the peripheral edge portion of the back surface Wb of the substrate W.

Inside the nozzle portion 204, an internal flow path 206 for guiding the cooling liquid supplied to the plurality of discharge ports 205 is formed. The plurality of discharge ports 205 communicate with the internal flow path 206. The nozzle portion 204 communicates with the coolant pipe 53. The internal flow path 206 is connected to the downstream end (upper end) of the lower surface supply pipe 51. As a result, the substrate W can be uniformly cooled in the radial direction DL. In the examples of FIGS. 10 and 11, the opening areas of the discharge ports 205 are equal to each other. However, the opening areas of the discharge ports 205 may be different from each other.

The discharge port 205 discharges the coolant toward the back surface Wb of the substrate W in the discharge direction. This discharge direction may be vertically upward, or may be inclined to the upstream side or the downstream side of the rotation direction Dr of the substrate W with respect to the vertical upper side.
In this case, in the back surface coolant supply step executed in parallel with the SPM reduction step (S4), the control device 3 discharges the coolant from the central portion discharge port 205a toward the center portion of the back surface Wb of the substrate W. The central portion discharge step and the peripheral portion discharge step of discharging the cooling liquid from the peripheral portion discharge port 205b toward the peripheral edge portion of the back surface Wb of the substrate W are executed.

In the processing unit 202 according to the second embodiment, not only the first substrate processing example but also the second substrate processing example and the third substrate processing example can be executed.
Although the two embodiments of the present invention have been described above, the present invention can also be implemented in other embodiments.
For example, in the first to third substrate processing examples, the rotation speed of the substrate W in the SPM reduction step (S4) is equivalent to the rotation speed of the substrate W in the SPM step (S3). However, the rotation speed of the substrate W in the SPM reduction step (S4) may be faster than the rotation speed of the substrate W in the SPM step (S3) (for example, about 300 rpm) (for example, 500 rpm).

In this case, since the centrifugal force acting on the surface Wa of the substrate W increases in the SPM reduction step (S4), it is possible to promote the discharge of SPM from the surface Wa of the substrate W. As a result, the amount of high-temperature SPM present on the surface Wa of the substrate W at the start of the first rinsing step (S5) can be further reduced. Therefore, the amount of fume F of SPM generated around the surface Wa of the substrate W in the first rinsing step (S5) can be further suppressed.

Further, in the first and second substrate processing examples, the rotation speed of the SPM reduction step (S4) and / or the period of the SPM reduction step (S4) is the surface Wa of the substrate W at the end of the SPM reduction step (S4). The temperature may be set at a rate and / or a period such that the temperature of the temperature drops to a threshold value (predetermined low temperature). In this case, the first rinsing step (S5) is started after the temperature of the surface Wa of the substrate W drops to a threshold value (predetermined low temperature). In this case, since the first rinsing step (S5) is started after the liquid temperature of SPM existing on the surface Wa of the substrate W is sufficiently lowered, the periphery of the surface Wa of the substrate W in the first rinsing step (S5). The amount of SPM fume generated in the air conditioner can be further suppressed.

Further, when liquids of the same liquid type and the same temperature are used as the rinse liquid and the coolant as in the first substrate treatment example and the third substrate treatment example, the lower rinse liquid supply unit 71 is used as a coolant. It can also be used as a supply unit. In this case, at the start of the SPM reduction step (S4), the rinse liquid valve 55 is opened, and the rinse liquid discharged from the lower surface nozzle 11 is used as the coolant. Then, even at the end of the SPM reduction step (S4), the process proceeds to the first rinse step (S5) without closing the rinse liquid valve 55 and continuing to discharge the rinse liquid from the lower surface nozzle 11. In this case, the coolant supply unit 72 may be abolished.

Further, in the first to third substrate treatment examples, it has been described that the rinsing liquid is at room temperature, but the rinsing liquid is not water at room temperature but a liquid temperature higher than room temperature (about 40 ° C to about 60 ° C). Hot water (HOT DIW) may be used.
The first to third substrate processing examples may be combined with each other.
Further, in the first to third substrate processing examples, it is not necessary to execute the back surface coolant supply step in parallel with the SPM reduction step (S4).

Further, in the above-mentioned first to third substrate processing examples, the first static elimination liquid supply step of supplying the static elimination liquid to the surface Wa of the substrate W may be executed prior to the SPM step (S3). The static eliminator is, for example, carbonated water. In this case, it is possible to effectively suppress the generation of electrostatic discharge due to the carry-on charge of the substrate W.
Further, in the first to third substrate processing examples, the first cleaning step of cleaning the surface Wa of the substrate W with the first cleaning chemical solution may be executed prior to the SPM step (S3). .. As such a first cleaning chemical solution, for example, hydrofluoric acid (HF) can be exemplified.

Further, in the first to third substrate processing examples, prior to the drying step (S8), an organic solvent (drying solution) having a low surface tension is supplied to use the rinse solution existing on the surface Wa of the substrate W as the organic solvent. An organic solvent replacement step may be performed. This organic solvent replacement step is performed with the processing cup 12 in a state of facing the third guard.
Further, in the first to third substrate processing examples, the one that discharges the rinse liquid from the central shaft nozzle 9 integrated with the blocking member 8 has been described as an example, but it is provided separately from the blocking member 8. The rinse liquid may be discharged from the rinse liquid nozzle toward the central portion of the surface Wa of the substrate W.

Further, although the resist removing process is taken as an example of the first to third substrate processing examples, the process is not limited to the resist, and may be a process of removing other organic substances by using SPM.
Further, in the first and second embodiments, as the SPM supply unit 6, a nozzle mixing type in which H ₂ SO ₄ and H ₂ O ₂ are mixed inside the SPM nozzle 21 has been described as an example. It is also possible to provide a mixing portion connected via a pipe on the upstream side of the SPM nozzle 21, and to adopt a pipe mixing type in which H ₂ SO ₄ and H ₂ O ₂ are mixed in this mixing portion. ..

Further, in each of the above-described embodiments, the case where the substrate processing device 1 is a device for processing the surface Wa of the substrate W made of a semiconductor wafer has been described, but the substrate processing device is a substrate for a liquid crystal display device and organic EL (electroluminescence). ) A device that processes substrates such as FPD (Flat Panel Display) substrates such as display devices, optical disk substrates, magnetic disk substrates, photomagnetic disk substrates, photomask substrates, ceramic substrates, and solar cell substrates. You may.

In addition, various design changes can be made within the scope of the matters described in the claims.

1: Board processing device 2: Processing unit 3: Control device 4: Chamber 5: Spin chuck (board holding unit)
6: SPM supply unit 10: Rinse liquid supply unit 12: Processing cup 13: Exhaust unit 17: Spin motor (rotation)
63: First guard (guard)
66: Guard elevating unit 71: Lower rinse liquid supply unit 72: Coolant supply unit CP: Liquid capture position (first height position)
A1: Rotation axis F: Fume LF: Liquid film UP: Upper position (second height position)
W: Substrate Wa: Front surface Wb: Back surface

Claims (22)

An SPM step of supplying heated SPM to the surface of the substrate held in a horizontal position by the substrate holding unit with the surface of the substrate facing upward.
Following the end of the SPM process, the SPM is discharged from the surface of the substrate by rotating the substrate around a rotation axis passing through the central portion of the substrate without supplying the SPM to the surface of the substrate. The SPM reduction low temperature step of reducing the amount of SPM present on the surface of the substrate and lowering the temperature of the substrate to the extent that the surface of the substrate is not dried.
A substrate treatment method comprising a rinsing step of supplying a rinsing liquid containing water to the surface of the substrate after the SPM reduction low temperature step. In parallel with the SPM reduction low temperature step, a back surface coolant supply step of supplying a coolant having a liquid temperature lower than the SPM supplied to the surface of the substrate is provided on the back surface of the substrate opposite to the front surface. The substrate processing method according to claim 1, further comprising. The SPM process of supplying SPM to the surface of the substrate held in a horizontal position by the substrate holding unit with the surface of the substrate facing upward.
Following the end of the SPM process, the SPM is discharged from the surface of the substrate by rotating the substrate around a rotation axis passing through the central portion of the substrate without supplying the SPM to the surface of the substrate. An SPM reduction step that reduces the amount of SPM present on the surface of the substrate to the extent that the surface of the substrate is not dried.
In parallel with the SPM reduction step, a back surface coolant supply step of supplying a coolant having a liquid temperature lower than the SPM supplied to the surface of the substrate to the back surface of the substrate opposite to the front surface.
After the SPM reduction step, a rinsing step of supplying a rinsing liquid containing water to the surface of the substrate is included.
The back surface coolant supply step is directed toward the peripheral edge portion of the back surface of the substrate in parallel with the central portion discharge step of discharging the coolant toward the central portion of the back surface of the substrate and the central portion discharge process. A substrate processing method including a peripheral edge discharge step of discharging the coolant. The substrate processing method according to claim 2 or 3, wherein the cooling liquid has a liquid temperature higher than that of the rinsing liquid. The SPM process of supplying SPM to the surface of the substrate held in a horizontal position by the substrate holding unit with the surface of the substrate facing upward.
Following the end of the SPM process, the SPM is discharged from the surface of the substrate by rotating the substrate around a rotation axis passing through the central portion of the substrate without supplying the SPM to the surface of the substrate. An SPM reduction step that reduces the amount of SPM present on the surface of the substrate to the extent that the surface of the substrate is not dried.
In parallel with the SPM reduction step, a back surface coolant supply step of supplying a coolant having a liquid temperature lower than the SPM supplied to the surface of the substrate to the back surface of the substrate opposite to the front surface.
After the SPM reduction step, a rinsing step of supplying a rinsing liquid containing water to the surface of the substrate is included.
A substrate processing method in which the coolant has the same liquid temperature as the rinse liquid. The substrate processing method according to claim 1 or 2 , wherein the rinsing step is started after the temperature of the surface of the substrate is lowered to a predetermined low temperature by the SPM reduction low temperature step. In parallel with the SPM reduction and low temperature step, a temperature detection step of detecting the temperature of the substrate by a temperature sensor is further included.
The substrate processing method according to claim 6, wherein when the detected temperature reaches the predetermined low temperature, the SPM reduction low temperature step is completed and the rinsing step is started. In parallel with the SPM step, a first substrate rotation step of rotating the substrate around the rotation axis is further included.
2 . 7. The substrate processing method according to any one of 7. A second substrate rotation step of rotating the substrate around the rotation axis in parallel with the rinsing step,
In parallel with the SPM reduction and lowering temperature step and the rinsing step, an exhaust step in the guard having a cylindrical guard surrounding the substrate holding unit and exhausting the inside of a processing cup accommodating the substrate holding unit. ,
In parallel with the rinsing step, a first height maintenance step of maintaining the guard at the first height position and a first height maintenance step.
Claims 1 , 2 include, in parallel with the SPM reduction low temperature step, a second height maintenance step of maintaining the guard at a second height position higher than the first height position. , 6, 7 and 8, wherein the substrate processing method is described. The substrate processing method according to any one of claims 1 to 9, further comprising a step of supplying SC1 to the surface of the substrate after the rinsing step. The SPM process of supplying SPM to the surface of the substrate held in a horizontal position by the substrate holding unit with the surface of the substrate facing upward.
Following the end of the SPM process, SPM is discharged from the surface of the substrate by rotating the substrate around a rotation axis passing through the central portion of the substrate without supplying a liquid to the surface of the substrate, and the substrate is discharged. An SPM reduction step of reducing the amount of SPM present on the surface of the substrate until the surface of the substrate is not dried and the SPM present on the surface of the substrate does not form a liquid film.
A substrate treatment method comprising a rinsing step of supplying a rinsing liquid containing water to the surface of the substrate after the SPM reduction step. A board holding unit that holds the board in a horizontal position with the surface of the board facing upward.
A rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate, and a rotation unit.
An SPM supply unit for supplying SPM to the surface of the substrate held by the substrate holding unit, and
A rinse liquid supply unit for supplying a rinse liquid containing water to the surface of the substrate held by the substrate holding unit, and a rinse liquid supply unit.
The rotation unit, the SPM supply unit, and a control device for controlling the rinse liquid supply unit are included.
Following the end of the SPM step of supplying the heated SPM to the surface of the substrate by the SPM supply unit and the end of the SPM step, the control device does not supply SPM to the surface of the substrate, and the substrate is used. SPM present on the surface of the substrate to the extent that the surface of the substrate is not dried by discharging SPM from the surface of the substrate by rotating the substrate with the rotation unit around the rotation axis passing through the central portion of the substrate. The SPM reduction low temperature step of reducing the amount of the substrate and lowering the temperature of the substrate, and the rinsing step of supplying the rinse liquid to the surface of the substrate by the rinse liquid supply unit after the SPM reduction low temperature step. Board processing equipment to execute. The back surface of the substrate opposite to the front surface further comprises a coolant supply unit that supplies a coolant having a liquid temperature lower than the SPM supplied to the surface of the substrate.
The substrate processing apparatus according to claim 12 , wherein the control device further executes a back surface coolant supply step of supplying the coolant by the coolant supply unit in parallel with the SPM reduction temperature reduction step. A board holding unit that holds the board in a horizontal position with the surface of the board facing upward.
A rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate, and a rotation unit.
An SPM supply unit for supplying SPM to the surface of the substrate held by the substrate holding unit, and
A rinse liquid supply unit for supplying a rinse liquid containing water to the surface of the substrate held by the substrate holding unit, and a rinse liquid supply unit.
The back surface of the substrate opposite to the front surface includes a coolant supply unit that supplies a coolant having a liquid temperature lower than the SPM supplied to the surface of the substrate.
The rotation unit, the SPM supply unit, the rinse liquid supply unit, and the control device for controlling the coolant supply unit are included.
Following the SPM step of supplying SPM to the surface of the substrate by the SPM supply unit and the end of the SPM step, the control device performs the central portion of the substrate without supplying SPM to the surface of the substrate. SPM is discharged from the surface of the substrate by rotating the substrate with the rotation unit around the axis of rotation through which the substrate passes, and the amount of SPM present on the surface of the substrate is reduced to the extent that the surface of the substrate is not dried. In parallel with the step and the SPM reduction step, after the back surface coolant supply step of supplying the coolant by the coolant supply unit and the SPM reduction step, the surface of the substrate is rinsed by the rinse liquid supply unit. Perform a rinsing process to supply the liquid and
The peripheral edge of the coolant supply unit facing the central portion of the back surface of the substrate held by the substrate holding unit and the peripheral edge of the back surface of the substrate held by the substrate holding unit. It has a part discharge port and
In the back surface coolant supply step, the control device is in parallel with the central portion discharge step of discharging the coolant from the central portion discharge port toward the central portion of the back surface of the substrate and the central portion discharge process. A substrate processing apparatus that executes a peripheral edge discharge step of discharging the cooling liquid from the peripheral edge discharge port toward the peripheral edge of the back surface of the substrate. The substrate processing apparatus according to claim 13 , wherein the cooling liquid has a liquid temperature higher than that of the rinsing liquid. A board holding unit that holds the board in a horizontal position with the surface of the board facing upward.
A rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate, and a rotation unit.
An SPM supply unit for supplying SPM to the surface of the substrate held by the substrate holding unit, and
A rinse liquid supply unit for supplying a rinse liquid containing water to the surface of the substrate held by the substrate holding unit, and a rinse liquid supply unit.
The back surface of the substrate opposite to the front surface includes a coolant supply unit that supplies a coolant having a liquid temperature lower than the SPM supplied to the surface of the substrate.
The rotation unit, the SPM supply unit, the rinse liquid supply unit, and the control device for controlling the coolant supply unit are included.
Following the SPM step of supplying SPM to the surface of the substrate by the SPM supply unit and the end of the SPM step, the control device performs the central portion of the substrate without supplying SPM to the surface of the substrate. SPM is discharged from the surface of the substrate by rotating the substrate with the rotation unit around the axis of rotation through which the substrate passes, and the amount of SPM present on the surface of the substrate is reduced to the extent that the surface of the substrate is not dried. In parallel with the step and the SPM reduction step, after the back surface coolant supply step of supplying the coolant by the coolant supply unit and the SPM reduction step, the surface of the substrate is rinsed by the rinse liquid supply unit. Perform a rinsing process to supply the liquid and
A substrate processing apparatus in which the coolant has the same liquid temperature as the rinse liquid. The substrate processing apparatus according to claim 12 or 13 , wherein the control device starts the rinsing process after the temperature of the surface of the substrate is lowered to a predetermined low temperature by the SPM reduction and low temperature step. Further including a temperature sensor for detecting the temperature of the substrate,
The control device further executes a temperature detection step of detecting the temperature of the substrate by the temperature sensor in parallel with the SPM reduction and low temperature step.
The substrate processing apparatus according to claim 17 , wherein when the detected temperature reaches the predetermined low temperature, the control device ends the SPM reduction low temperature step and starts the rinsing step . In parallel with the SPM process, the control device further executes a first substrate rotation step of rotating the substrate around the rotation axis.
The control device performs the step of rotating the substrate in the SPM reduction and lowering temperature step, which is the same as the first substrate rotation step or at a rotation speed higher than that of the first substrate rotation step. 12. The substrate processing apparatus according to any one of 13, 17, and 18 . A processing cup that surrounds the substrate holding unit and has a guard that captures the processing liquid discharged from the substrate held by the substrate holding unit.
An exhaust unit that exhausts the inside of the processing cup and
Further including a guard elevating unit for elevating and elevating the guard.
The control device further controls the exhaust unit and the guard elevating unit.
The control device performs the inside of the guard in parallel with the second substrate rotation step of rotating the substrate around the rotation axis in parallel with the rinsing step, the SPM reduction and lowering temperature step, and the rinsing step. In parallel with the exhaust step in the guard for exhausting, the first height maintenance step for maintaining the guard at the first height position in parallel with the rinsing step, and the SPM reduction low temperature step, the said One of claims 12, 13, 17, 18 and 19 , which performs a second height maintenance step of maintaining the guard at a second height position higher than the first height position. The substrate processing apparatus according to. The SC1 supply unit for supplying SC1 to the substrate held by the substrate holding unit is further included.
The substrate processing apparatus according to any one of claims 12 to 20 , wherein the control device further executes a step of supplying SC1 to the surface of the substrate after the rinsing step. A board holding unit that holds the board in a horizontal position with the surface of the board facing upward.
A rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate, and a rotation unit.
An SPM supply unit for supplying SPM to the surface of the substrate held by the substrate holding unit, and
A rinse liquid supply unit for supplying a rinse liquid containing water to the surface of the substrate held by the substrate holding unit, and a rinse liquid supply unit.
The rotation unit, the SPM supply unit, and a control device for controlling the rinse liquid supply unit are included.
Following the SPM step of supplying SPM to the surface of the substrate by the SPM supply unit and the end of the SPM step, the control device passes through the central portion of the substrate without supplying a liquid to the surface of the substrate. A state in which SPM is discharged from the surface of the substrate by rotating the substrate with the rotation unit around the rotation axis, the surface of the substrate is not dried, and the SPM existing on the surface of the substrate does not form a liquid film. After the SPM reduction step, the SPM reduction step of reducing the amount of SPM existing on the surface of the substrate is executed, and then the rinse step of supplying the rinse liquid to the surface of the substrate by the rinse liquid supply unit is executed. , Substrate processing equipment.

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