JP7058579B2 - Pore device and particle measurement system - Google Patents

Description

The present invention relates to measurement using a pore device.

A particle size distribution measurement method called the electrical detection band method (Coulter principle) is known. In this measurement method, an electrolytic solution containing particles is passed through pores called nanopores. As the particles pass through the pores, the electrolyte in the pores is reduced by an amount corresponding to the volume of the particles, increasing the electrical resistance of the pores. Therefore, by measuring the electrical resistance of the pores, the volume of the passing particles can be measured when the thickness of the pores is larger than that of the particles, and when the thickness of the pores is sufficiently smaller than that of the particles. , The cross section (ie, particle size) of the passing particles can be measured.

FIG. 1 is a block diagram of a fine particle measurement system 1R using an electrical detection band method. The fine particle measurement system 1R includes a pore device 100, a measurement device 200R, and a data processing device 300.

The inside of the pore device 100 is filled with the electrolytic solution 2 containing the particles 4 to be detected. The inside of the pore device 100 is separated into two spaces by a pore chip 102, and the electrodes 106 and 108 are provided in the two spaces. When a potential difference is generated between the electrodes 106 and 108, an ionic current flows between the electrodes, and the particles 4 move from one space to the other via the pores 104 by electrophoresis.

The measuring device 200R generates a potential difference between the electrode pairs 106 and 108, and acquires information having a correlation with the resistance value Rp between the electrode pairs. The measuring device 200R includes a transimpedance amplifier 210, a voltage source 220, and a digitizer 230. The voltage source 220 generates a potential difference Vb between the electrode pairs 106 and 108. This potential difference Vb is a driving source for electrophoresis and a bias signal for measuring the resistance value Rp.

A minute current Is, which is inversely proportional to the resistance of the pore 104, flows between the electrode pairs 106 and 108.
Is = Vb / Rp ... (1)

The transimpedance amplifier 210 converts the minute current Is into a voltage signal Vs. When the conversion gain is r, the following equation holds.
Vs = -r x Is ... (2)
Substituting Eq. (1) into Eq. (2) gives Eq. (3).
Vs = -Vb x r / Rp ... (3)
The digitizer 230 converts the voltage signal Vs into digital data Ds. In this way, the measuring device 200R can obtain a voltage signal Vs that is inversely proportional to the resistance value Rp of the pore 104.

FIG. 2 is a waveform diagram of an exemplary minute current Is measured by the measuring device 200R. The vertical and horizontal axes of the waveform charts and time charts referred to in the present specification are appropriately enlarged or reduced for easy understanding, and each waveform shown is also simplified for easy understanding. It is made, or exaggerated or emphasized.

The resistance value Rp of the pores 104 increases for a short period of time through which the particles pass. Therefore, the current Is decreases in a pulse shape as the particles pass through. The amplitude of the individual pulse currents correlates with the particle size. The data processing apparatus 300 processes the digital data Ds and analyzes the number of particles 4 and the particle size distribution contained in the electrolytic solution 2.

Japanese Unexamined Patent Publication No. 2011-513739 Japanese Unexamined Patent Publication No. 4-040373 Special Table No. 7-504989 Japanese Unexamined Patent Publication No. 2004-510980

3 (a) to 3 (b) are cross-sectional views of the pore device examined by the present inventors. The pore device 100R of FIG. 3A is provided with two electrodes E1 and E2 corresponding to the electrode pairs 106 and 108. The electrodes E1 and E2 are an electrode rod or an electrode plate, one electrode E1 is inserted into the space above the pore tip 102, and the other electrode E2 is inserted into the space below the pore tip 102.

In the structure of FIG. 3A, the positional deviation of the electrodes E1 and E2 can cause a measurement error. Further, since the electrodes E1 and E2 are in direct contact with the electrolyte solution, corrosion / deterioration is unavoidable, and the electrodes need to be replaced frequently, which increases the cost of the device.

In the pore device 100S of FIG. 3B, electrodes E3 and E4 corresponding to electrode pairs 106 and 108 are formed directly on the front surface and the back surface of the pore chip 102. In this case, the electrodes E3 and E4 can be inexpensively formed by the semiconductor manufacturing process, and the electrodes E3 and E4 can be disposable together with the pore device 100S. On the other hand, since the thickness of the pore chip 102 is as thin as several hundred μm to several mm, in the structure of FIG. 3B, the parasitic capacitance between the electrodes E3 and E4 becomes large, and the response speed of the measuring instrument decreases. The problem arises.

The present invention has been made in such a situation, and one of the exemplary purposes of the embodiment is to provide a pore device having a low operating cost and a reduced parasitic capacitance.

One aspect of the invention relates to a pore device. The pore device is adjacent to a pore chip having pores, a first insulating member having a first opening at a position overlapping the pores and adjacent to the first surface of the pore chip, and adjacent to a second surface of the pore chip. A second insulating member having a second opening at a position overlapping with the pores, a first electrode provided on a surface opposite to the pore chip of the first insulating member, and a surface opposite to the pore chip of the second insulating member. The second electrode provided in the above is provided.

It should be noted that any combination of the above components or components and expressions of the present invention that are mutually replaced between methods, devices, and the like are also effective as aspects of the present invention.

According to an aspect of the present invention, it is possible to provide a pore device having a low operating cost and a reduced parasitic capacitance.

It is a block diagram of the fine particle measurement system using the electric detection band method. It is a waveform diagram of an exemplary microcurrent Is measured by a measuring device. 3A and 3B are cross-sectional views of the pore device examined by the present inventors. 4 (a) and 4 (b) are cross-sectional views of the pore device according to the embodiment. 5 (a) is a cross-sectional view showing the distribution of parasitic elements of the pore device of FIG. 3 (b), and FIG. 5 (b) is a cross-sectional view showing the distribution of parasitic elements of the pore device of FIG. .. It is sectional drawing which shows the layer structure of the pore device which concerns on Example 1. FIG. It is a perspective view of the pore device of FIG. It is an assembly drawing of the pore device of FIG. It is a figure which shows the interface socket which accommodates the pore device of FIG. It is sectional drawing which shows the layer structure of the pore device which concerns on Example 2. FIG. It is a perspective view of the pore device of FIG. 12 (a) and 12 (b) are perspective views of the first cover member and the second cover member of the pore device of FIG. It is sectional drawing which shows the layer structure of the 1st cover member and the 2nd cover member of FIGS. 12A and 12B. It is sectional drawing of the pore device which concerns on Example 3. FIG. It is sectional drawing of the pore device which concerns on Example 4. FIG.

Hereinafter, the present invention will be described with reference to the drawings based on the preferred embodiments. The same or equivalent components, members, and processes shown in the drawings shall be designated by the same reference numerals, and duplicate description thereof will be omitted as appropriate. Further, the embodiment is not limited to the invention, but is an example, and all the features and combinations thereof described in the embodiment are not necessarily essential to the invention.

In the present specification, the "state in which the member A is connected to the member B" means that the member A and the member B are physically directly connected, and the member A and the member B are electrically connected to each other. It also includes cases of being indirectly connected via other members that do not substantially affect the connection state or impair the functions and effects performed by the combination thereof.

Similarly, "a state in which the member C is provided between the member A and the member B" means that the member A and the member C, or the member B and the member C are directly connected, and their electricity. It also includes cases of being indirectly connected via other members that do not substantially affect the connection state or impair the functions and effects performed by the combination thereof.

Further, the dimensions (thickness, length, width, etc.) of each member described in the drawings may be appropriately enlarged or reduced for ease of understanding. Furthermore, the dimensions of the plurality of members do not necessarily represent the magnitude relationship between them, and even if one member A is drawn thicker than another member B on the drawing, the member A is the member B. It can be thinner than.

The cross-sectional view in the present specification may show the position of each member by moving it on the XY plane.

FIG. 4A is a cross-sectional view of the pore device 600 according to the embodiment, and FIG. 4B is a cross-sectional view of the pore chip 610. As shown in FIG. 4B, the pore chip 610 includes a film 614 and a substrate 616. The film 614 is made of silicon nitride (Si ₃ N ₄ ) or the like, and pores 612 are formed by processing. The diameter φ ₁ of the pore 612 is 100 nm to 1 μm, which is larger than the diameter of the particles contained in the sample to be measured. The thickness of the film 614 is about 20 to 50 nm, preferably smaller than the diameter of the particles. To reinforce such a thin film 614, the film 614 is formed on the substrate 616. As the material of the base material 616, a semiconductor material such as silicon (Si) or an insulator such as glass can be selected, and the thickness thereof can be about 500 μm. Silicon may be formed by crystal growth on silicon dioxide (SiO ₂ ). Immediately below the pores 612, the base material 616 is open. _The opening diameter φ2 of the base material 616 is sufficiently larger _than the pore diameter φ1 and can be about several hundred μm (for example, 200 to 300 μm). Although not limited to this, _Si is grown on SiO ₂ , a Si 3N 4 thin film is formed on the Si ₃ N ₄ thin film, and the base material 616 is opened by etching from the back surface side, and the film 614 is opened. May be good.

See FIG. 4 (a). The pore device 600 includes a pore chip 610, a first insulating member 620, a second insulating member 630, a first electrode 640, and a second electrode 650.

The pore chip 610 has pores 612. Of the pore chips 610, those having pore diameters on the nano-order are called nanopore chips. The pore device 600 according to the embodiment is particularly suitable for combination with a nanopore chip, but can be applied without being limited to the diameter of the pores. A pore device having a nanopore chip is particularly referred to as a nanopore device.

The pore chip 610 is sandwiched between the first insulating member 620 and the second insulating member 630. The first insulating member 620 is adjacent to the first surface S1 of the pore chip 610, and the first opening 622 is provided at a position overlapping with the pore 612. The second insulating member 630 is adjacent to the second surface S2 of the pore chip 610, and a second opening 632 is provided at a position overlapping the pore 612. The first surface S1 may face vertically upward in use, and the second surface S2 may face vertically downward in use.

The first electrode 640 is formed on the surface of the first insulating member 620 opposite to the pore tip 610. The second electrode 650 is formed on the surface of the second insulating member 630 opposite to the pore tip 610.

The pore device 600 is separated into a first space 602 and a second space 604 by a pore chip 610. The pore device 600 is configured so that an electrolytic solution can be injected into each of the first space 602 and the second space 604. Further, the pore device 600 is configured to be capable of injecting a sample to be measured containing particles to be measured into the first space 602.

The above is the basic configuration of the pore device 600. Next, the advantages will be described. 5 (a) is a cross-sectional view showing the distribution of the parasitic elements of the pore device 100S of FIG. 3 (b), and FIG. 5 (b) is a cross-sectional view showing the distribution of the parasitic elements of the pore device 600 of FIG. Is.

Referring to FIG. 5A, in the conventional pore device 100S, a parasitic capacitance _C0 is formed between the electrodes E3 and E4. Assuming that the diameter φ of the pore 612 is nano-order and the thickness d ₀ of the pore chip 102 is several hundred microns to several mm, the parasitic capacitance C ₀ is predominantly defined by the thickness d ₀ .

See FIG. 5 (b). In the pore device 600 of FIG. 4, the parasitic capacitance C between the first electrode 640 and the second electrode 650 can be regarded as a series connection of the parasitic capacitances Cd ₁ , C ₀ , and Cd ₂ .
1 / C = 1 / Cd ₁ + 1 / C ₀ + 1 / Cd ₂
C = {1 / Cd ₁ + 1 / C ₀ + 1 / Cd ₂ } ^-1 ... (1)

If Cd ₁ = Cd ₂ = Cd,
C = {2 / Cd + 1 / C ₀ } ^-1
= C ₀ / {1 + 2C ₀ / Cd} ... (2)
Since 1 + 2C ₀ / C _d > 1, C <C ₀ holds. It should be noted that C <C ₀ also holds when Cd ₁ ≠ Cd ₂ .

By replacing C ₀ / Cd with the parameter α, the parasitic capacitance C in the pore device 600 can be 1 / (1 + 2α) times the parasitic capacitance C ₀ in the pore device 100S.

For the pore chip 610, when the electrode area contributing to the parasitic capacitance C ₀ is S ₀ and the dielectric constant is ε, the parasitic capacitance C ₀ can be approximated by the following equation (3).
C ₀ = εS ₀ / d ₀ (3)

With respect to the first insulating member 620, when the electrode area contributing to the parasitic capacitance Cd ₁ is S ₁ and the dielectric constant is ε ₁ , the parasitic capacitance Cd ₁ can be approximated by the following equation (4).
Cd ₁ = ε ₁ S ₁ / d ₁ (4)

Similarly, for the second insulating member 630, when the electrode area contributing to the parasitic capacitance Cd ₂ is S ₂ and the dielectric constant is ε ₂ , the parasitic capacitance Cd ₂ can be approximated by the following equation (5).
Cd ₂ = ε ₂ S ₂ / d ₂ (5)

Approximating to ε = ε ₁ = ε ₂ and S ₀ = S ₁ = S ₂ , Cd ₁ = C ₀ × d ₀ / d ₁ and Cd ₂ = C ₀ × d ₀ / d ₂ . Therefore, the interelectrode capacitance C of the pore device 600 is
C = {1 / C ₀ x 1 / Cd ₁ + 1 / Cd ₂ } ^-1
= C ₀ × {1 + d ₁ / d ₀ + d ₂ / d ₀ } ^-1
= C ₀ × {1 + (d ₁ + d ₂ ) / d ₀ }
Can be approximated to.

When the total thickness d ₁ + d ₂ of the first insulating member 620 and the second insulating member 630 is equal to the thickness d ₀ of the pore chip 610, the parasitic capacitance can be reduced to 1/2.

When the total thickness d ₁ + d ₂ of the first insulating member 620 and the second insulating member 630 is double the thickness d ₀ of the pore chip 610, the parasitic capacitance can be reduced to 1/3.

When the total thickness d ₁ + d ₂ of the first insulating member 620 and the second insulating member 630 is set to 4 times the thickness d ₀ of the pore chip 610, the parasitic capacitance can be reduced to 1/5.

Thus, according to the pore device 600 according to the embodiment, the parasitic capacitance between the electrodes 640 and 650 can be reduced.

Further, in the pore device 600, the electrodes 640 and 650 that come into contact with the electrolyte solution are integrated in the pore device 600, and the cost is low. Therefore, the operating cost of the fine particle measurement system including the pore device 600 can be reduced.

Further, the pore device 600 is more advantageous in terms of manufacturing than the pore device 100S of FIG. 3 (b). Specifically, the pore device 100S of FIG. 3B requires a process of forming pores and a process of forming electrodes when the pore chip 102 is manufactured. On the other hand, in the pore device 600 of FIG. 4, since the electrode is formed on the side of the first insulating member 620 and the second insulating member 630, only the pore 612 is formed in the pore chip 610 to form the electrode. There is no need. That is, the pore device 600 has an advantage that the process of forming nano-order pores and the process of forming electrodes can be separated.

The present invention extends to various devices and methods derived from the above description, and is not limited to a specific configuration. Hereinafter, more specific configuration examples and examples will be described not to narrow the scope of the present invention but to help understanding the essence and operation of the invention and to clarify them.

(Example 1)
FIG. 6 is a cross-sectional view showing the layer structure of the pore device 600A according to the first embodiment. The pore device 600A includes a pore chip 610, a first insulating member 620, a second insulating member 630, a first electrode 640, a second electrode 650, a third insulating member 660, and a fourth insulating member 670.

The third insulating member 660 is provided adjacent to the first insulating member 620. The third insulating member 660 has a third opening 662 provided at a position overlapping with the first opening 622. The diameter of the third opening 662 is larger than the diameter of the first opening 622, and a part 642 of the first electrode 640 is exposed in the third opening 662. The first opening 622 and the third opening 662 correspond to the first space 602 in FIG. The sample to be measured and the electrolyte solution are injected into the first space 602.

The first electrode 640 is exposed in a part 644 on the opposite side so as to be in contact with the pin P1 provided in the interface socket of the measuring device 200. In this example, a portion 664 of the third insulating member 660 is cut out (or opened) and a portion 644 of the first electrode 640 is exposed vertically above in use.

The fourth insulating member 670 is provided adjacent to the second insulating member 630. The fourth insulating member 670 has a recess 672 provided at a position overlapping with the second opening 632. One end 652 of the second electrode 650 is exposed in the recess 672.

The second electrode 650 is exposed in a part 654 on the opposite side so as to be in contact with the pin P2 provided in the interface socket of the measuring device 200. In this example, a portion 674 of the fourth insulating member 670 is notched (or opened) and a portion 654 of the second electrode 650 is exposed vertically below in use.

The second opening 632 and the recess 672 correspond to the second space 604 in FIG. The fourth insulating member 670 is provided with an injection port (not shown in FIG. 6, 676 in FIGS. 7 and 8) for injecting the electrolyte solution into the second space 604. Further, the second insulating member 630 is provided with a hole for venting air (not shown in FIG. 6 and an exhaust port 634 in FIG. 8) for injecting an electrolyte solution into the second space 604.

The third insulating member 660, the first electrode 640, and the first insulating member 620 form the first cover member 680. Further, the second insulating member 630, the second electrode 650 and the fourth insulating member 670 form the second cover member 682. The pore device 600A can be grasped as having a structure in which the pore chip 610 is sandwiched between the first cover member 680 and the second cover member 682. Since the pore chip 610 is a consumable item, the operating cost of the system can be reduced by reusing the first cover member 680 and the second cover member 682 and replacing only the pore chip 610.

The method for forming the first electrode 640 and the second electrode 650 is not particularly limited, but the first electrode 640 and the second electrode 650 can be formed, for example, by applying an electrode paste. A part of 642,652 immersed in the electrolyte solutions of the first electrode 640 and the second electrode 650 may be silver / silver chloride electrodes (Ag / AgCl). Silver (Ag), gold (Au), platinum (Pt) or the like can be used for the portion that does not come into contact with the electrolyte solution.

FIG. 7 is a perspective view of the pore device 600A of FIG. The fourth insulating member 670 is provided with an injection port 676 for injecting the electrolyte solution into the second space 604. The injection port 676 communicates with the second space 604 (recessed portion 672) via a flow path provided in the fourth insulating member 670. Notches are provided in the portions of the third insulating member 660, the first insulating member 620, and the second insulating member 630 that overlap with the injection port 676. This allows the electrolyte solution to be injected.

FIG. 8 is an assembly diagram of the pore device 600A of FIG. The second insulating member 630 is provided with an exhaust port 634. The exhaust port 634 communicates with the second space 604 (second opening 632) via a flow path provided in the second insulating member 630. A notch is provided in a portion of each of the third insulating member 660 and the first insulating member 620 that overlaps with the exhaust port 634.

FIG. 9 is a diagram showing an interface socket 700 accommodating the pore device 600A of FIG. The interface socket 700 includes a container 710 and an upper lid 720. The container 710 has a space 712 for accommodating the pore device 600A. At the bottom of the space 712, a pin P2 that can come into contact with a part 654 of the second electrode 650 while accommodating the pore device 600A is provided. The pin P2 is connected to an SMA (Sub Miniature Type A) or a hollow coaxial connector 714. Pogo pins may be used as the pins P2.

The electrolyte solution and the sample to be measured are injected from the third opening 662 with the pore device 600A housed in the container 710 of the interface socket 700. Further, the electrolyte solution is injected from the injection port 676. As a result, the first space 602 is filled with the electrolyte solution and the sample to be measured, and the second space 604 is filled with the electrolyte solution.

The upper lid 720 is provided with a pin P1 that can come into contact with a part 644 of the first electrode 640. The pin P1 is connected to an SMA (Sub Miniature Type A) or a hollow coaxial connector 722. Pogo pins may be used as the pins P2.

(Example 2)
FIG. 10 is a cross-sectional view showing the layer structure of the pore device 600B according to the second embodiment. 11 is a perspective view of the pore device 600B of FIG. 10. FIG. Differences from the first embodiment will be described. In the second embodiment, the pin P1 contacts the first electrode 640 from below. That is, a part 644 of the first electrode 640 is exposed in the vertical downward direction in use. Specifically, a part of the first insulating member 620, the second insulating member 630, and the fourth insulating member 670 is cut out, and a part of the first electrode 640 is exposed to the lower side.

12 (a) and 12 (b) are perspective views of the first cover member 680 and the second cover member 682 of the pore device 600B of FIG. See FIG. 12 (a). The first cover member 680 corresponds to the first insulating member 620 and the third insulating member 660 in FIG. A notch is provided in the corner of the first insulating member 620 to expose a part 644 of the first electrode 640. Further, the first insulating member 620 and the third insulating member 660 are provided with notches at the corner where the injection port 676 is provided and the corner where the exhaust port 634 is provided.

A groove 624 for accommodating the pore chip 610 is formed on the bottom surface of the first insulating member 620. Further, a groove 626 for embedding a sealing member (690 in FIG. 13) such as PDMS (polydimethylsiloxane) is formed inside the groove 624. The sealing member 690 is also referred to as a gasket, packing, O-ring, or the like.

See FIG. 12 (b). The second cover member 682 corresponds to the second insulating member 630 and the fourth insulating member 670 in FIG. Notches are provided at the corners of the second insulating member 630 and the fourth insulating member 670 in order to expose a part 644 of the first electrode 640. Further, a notch for exposing the injection port 676 is provided at the corner of the second insulating member 630.

A groove 636 for accommodating the pore chip 610 is formed on the upper surface of the second insulating member 630. Further, a groove 638 for embedding a seal member (692 in FIG. 13) is formed inside the groove 636.

The second insulating member 630 may be composed of two layers 630a and 630b. A groove 635 is formed in one of these two layers 630a and 630b. This groove 635 serves as a flow path that communicates the exhaust port 634 and the second space 604.

The fourth insulating member 670 may be composed of two layers 670a and 670b. A groove 677 is formed in one of these two layers 670a and 670b. This groove 677 becomes a flow path that communicates the injection port 676 and the second space 604.

13 is a cross-sectional view showing the layer structure of the first cover member 680 and the second cover member 682 of FIGS. 12A and 12B. The pore chip 610 is fitted and fixed in a groove formed on the bottom surface of the first insulating member 620 and the upper surface of the second insulating member 630. Further, the sealing members 690 and 692 prevent the solution from leaking to the surroundings along the contact surface between the first cover member 680 and the second cover member 682.

(Example 3)
FIG. 14 is a cross-sectional view of the pore device 600C according to the third embodiment. In the third embodiment, the pin P1 contacts the first electrode 640 from the lower side, and the pin P2 contacts the second electrode 650 from the upper side.

That is, a part 644 of the first electrode 640 is exposed in the vertical downward direction in use. Specifically, a part of the first insulating member 620, the second insulating member 630, and the fourth insulating member 670 is cut out, and a part of the first electrode 640 is exposed to the lower side.

A part 654 of the second electrode 650 is exposed vertically upward in use. Specifically, a part of the first electrode 640, the first insulating member 620, and the second insulating member 630 is cut out, and a part of the second electrode 650 is exposed on the upper side.

(Example 4)
FIG. 15 is a cross-sectional view of the pore device 600D according to the fourth embodiment. In Example 43, the pin P1 contacts the first electrode 640 from above, and the pin P2 contacts the second electrode 650 from above.

That is, a part 644 of the first electrode 640 is exposed in the vertically upward direction in use. Specifically, a part of the third insulating member 660 is cut out, and a part of the first electrode 640 is exposed on the upper side.

Part 654 of the second electrode 650 is also exposed vertically upward in use. Specifically, a part of the first insulating member 620 and the second insulating member 630 is cut out, and a part of the second electrode 650 is exposed on the upper side.

The present invention has been described above based on the embodiments. It is understood by those skilled in the art that this embodiment is an example, and that various modifications are possible for each of these components and combinations of each processing process, and that such modifications are also within the scope of the present invention. be. Hereinafter, such a modification will be described.

In addition to the electrode paste, the first electrode 640 and the second electrode 650 may be formed by pasting a metal plate or by sputtering.

Although the fine particle measuring device has been described in the present specification, the application of the present invention is not limited thereto, and it can be widely used for a measuring device accompanied by minute current measurement using a pore device such as a DNA sequencer.

Although the present invention has been described based on the embodiments, the embodiments merely show the principles and applications of the present invention, and the embodiments deviate from the ideas of the present invention defined in the claims. Many modifications and arrangement changes are allowed to the extent that they are not.

1 Fine particle measurement system 2 Electrodenate 4 Particles 600 Pore device 602 1st space 604 2nd space 610 Pore chip 612 Pore S1 1st surface S2 2nd surface 620 1st insulating member 622 1st opening 630 2nd insulating member 632 2nd Opening 634 Exhaust port 640 1st electrode 650 2nd electrode 660 3rd insulating member 662 3rd opening 670 4th insulating member 672 Recessed 674 Notch 676 Injection port 680 1st cover member 682 2nd cover member 690 1st seal member 692 2nd seal member 700 Interface socket 710 Container 720 Top lid 100 Pore device 200 Measuring device 202 Front end circuit 210 Transimpedance amplifier 220 Voltage source 230 Digitizer 300 Data processing device

Claims (12)

Pore chips with pores and
A first insulating member adjacent to the first surface of the pore chip and provided with a first opening at a position overlapping the pores.
A second insulating member adjacent to the second surface of the pore chip and provided with a second opening at a position overlapping the pores.
The first electrode provided on the surface of the first insulating member opposite to the pore chip,
A second electrode provided on the surface of the second insulating member opposite to the pore chip, and
A pore device characterized by being equipped with. Further, a third insulating member provided adjacent to the first insulating member is provided.
The third insulating member is provided at a position overlapping with the first opening, has a third opening having a diameter larger than that of the first opening, and one end of the first electrode is exposed at the third opening. The pore device according to claim 1. The pore device according to claim 2, wherein the first insulating member and the third insulating member form a first cover member. Further, a fourth insulating member provided adjacent to the second insulating member is provided.
The fourth insulating member has a recess provided at a position overlapping with the second opening, and one end of the second electrode is exposed in the recess, according to claim 1 or 2. Pore device. The pore device according to claim 4, wherein the second insulating member and the fourth insulating member form a second cover member. The pore device according to claim 5, wherein the second cover member is provided with an injection port that communicates with the recess. The pore device according to claim 5 or 6, wherein the second cover member is provided with an exhaust port for venting air communicating with the second opening. The pore device is detachably housed in an interface socket and is housed in the interface socket.
The interface socket is
A container provided with a recess for accommodating the pore device,
With the top lid
The pore device according to any one of claims 1 to 7, wherein the pore device comprises. The pore device according to any one of claims 1 to 8, wherein a part of each of the first electrode and the second electrode is exposed in such a manner that a pogo pin can be contacted. The pore device according to claim 9, wherein a part of each of the first electrode and the second electrode is exposed in a vertically downward direction during use. The ninth aspect of the present invention is characterized in that a part of one of the first electrode and the second electrode is exposed in the vertically downward direction during use, and a part of the other is exposed in the vertically upward direction during use. The described pore device. The pore device according to any one of claims 1 to 11.
A measuring device having an interface socket to which the pore device is mounted, and
A fine particle measurement system characterized by being equipped with.

Images