JP7030581B2 - Manufacturing method of semiconductor device and light-shielding adsorption jig - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device and a light-shielding adsorption jig.

Conventionally, for example, in order to form a pattern on a wafer surface, a method for manufacturing a semiconductor device in which a liquid negative photosensitive material (resist) is applied on both sides of a wafer after forming an oxide film has been known (for example, patent documents). 1. See Patent Document 2).

In such a conventional method for manufacturing a semiconductor device, the wafer on the N-plane side is in contact with the photographic mask, and the wafer on the P-plane side is not in contact with the photographic mask, and ultraviolet rays are emitted through the photographic mask in a grid pattern. Irradiate both sides (Fig. 12).

By irradiating with ultraviolet rays in this way, the resist is cured to form a grid-like pattern.

Since the resist does not cure in the region not irradiated with ultraviolet rays, it is easily removed in the next developing step. When impurities are diffused in the wafer, the wafer warps depending on the amount of impurities.

This wafer warp causes problems such as unexposure and pattern misalignment due to positional misalignment during ultraviolet irradiation (exposure process) after resist coating.

Therefore, in order to fix the wafer when irradiated with ultraviolet rays, a hole is made in the N-side photographic mask that comes into contact with the wafer and the wafer is fixed by vacuum.

Since the area of the wafer corresponding to the vacuum hole is irradiated with ultraviolet rays, the resist is cured and is not removed in the developing process.

Then, since the oxide film remains in the region where the resist remains, an electrode such as Ni is not formed.

Further, although preliminary solder is formed on the wafer by the screen printing method, the solder does not adhere to the area corresponding to the vacuum hole because there is an oxide film.

For example, the non-soldered portion is removed in the appearance process, but the chip pattern on the P surface (for example, a rectangle) is defective for 2 chips for identification. Therefore, for example, if there are 3 patterns, a total of 6 chips are discarded. (FIGS. 13 and 14).

Further, in the region where the solder has not adhered, a defect of crack shape abnormality occurs in the individualization process in the subsequent process, and the appearance yield is deteriorated (FIG. 15).

As described above, in the above-mentioned prior art, the photographic mask is adsorbed (fixed) on the semiconductor substrate (wafer), and the light (ultraviolet rays) that exposes the photosensitive material (resist) is shielded from light (ultraviolet rays) to obtain the photosensitive material at a predetermined position. Since the selective exposure is not possible, there are problems that the electrodes are not formed normally and the yield of appearance is lowered.

Special fair 5-33808 JP 2007-234742

Therefore, in the present invention, in the exposure process, the photographic mask is adsorbed (fixed) on the semiconductor substrate (wafer), and the light (ultraviolet rays) that exposes the photosensitive material (resist) is shielded from light (ultraviolet rays) to expose the photosensitive material at a predetermined position. It is an object of the present invention to provide a method for manufacturing a semiconductor device capable of selectively exposing a wafer.

A method for manufacturing a semiconductor device according to an embodiment of the present invention is as follows.
The coating process of applying the photosensitive material on the oxide film formed on the first surface of the semiconductor substrate, and
After the coating step, the light-shielding suction jig is attached to the exposed surface of the photo mask so that the light-shielding suction jig can suck the first surface of the semiconductor substrate from the suction hole penetrating the photographic mask. The photographic mask is removed from the light source in a state where the contact surface of the photographic mask is fixed to the first surface side of the semiconductor substrate by sucking the first surface side of the semiconductor substrate with the light-shielding suction jig. An exposure step of irradiating the photosensitive material with light through the light source to selectively expose the photosensitive material on the oxide film.
After the exposure step, a developing step of developing the exposed photosensitive material is provided.
The light-shielding adsorption jig is characterized in that the light output by the light source is shielded from light and is not diffusely reflected.

In the method for manufacturing a semiconductor device,
The light-shielding adsorption jig is
A main body portion that is arranged on the exposed surface of the photographic mask and engages the light-shielding adsorption jig with the photographic mask when the photographic mask is adsorbed on the semiconductor substrate.
It has an insertion portion that extends from the main body portion and is inserted into the suction hole of the photographic mask, and is provided with a ventilation hole that penetrates the main body portion and the insertion portion.
In the exposure step, by sucking the first surface of the semiconductor substrate from the main body side of the light-shielding suction jig through the ventilation hole and the suction hole, the first surface side of the semiconductor substrate is attracted. It is characterized in that the contact surface of the photographic mask is adsorbed to the surface.

In the method for manufacturing a semiconductor device,
The ventilation holes of the light-shielding adsorption jig are provided so that the light output by the light source does not directly reach the surface of the photosensitive material through the ventilation holes in the exposure step. It is a feature.

In the method for manufacturing a semiconductor device,
The photographic mask is characterized in that the cross section of the suction hole on the surface parallel to the exposed surface has a round or polygonal shape.

In the method for manufacturing a semiconductor device,
A cross section of the insertion portion of the light-shielding suction jig on a surface parallel to the exposed surface of the photo mask in a state where the insertion portion of the light-shielding suction jig is inserted into the suction hole of the photo mask. Is characterized by having a round or polygonal shape.

In the method for manufacturing a semiconductor device,
The cross section of the ventilation hole of the light-shielding suction jig on the surface parallel to the direction in which the photomask of the insertion portion of the light-shielding suction jig is inserted into the suction hole is Y-shaped or L-shaped. It is characterized by being T-shaped or staggered.

In the method for manufacturing a semiconductor device,
The size of the cross section of the suction hole is smaller than the size of the surface of one semiconductor chip formed on the semiconductor substrate.

In the method for manufacturing a semiconductor device, the light-shielding adsorption jig is characterized in that it is made of a resin, rubber, or an inorganic substance.

In the method for manufacturing a semiconductor device,
The photosensitive material is characterized by being a negative resist.

In the method for manufacturing a semiconductor device,
The light is characterized by being ultraviolet light.

In the method for manufacturing a semiconductor device,
The light source is characterized by being a mercury lamp.

In the method for manufacturing a semiconductor device,
The photo mask is
It is characterized in that it is a glass substrate in which the transmission region through which light is transmitted is selectively provided and the suction holes are formed.

In the method for manufacturing a semiconductor device,
After the developing step, it is further provided with an etching step of selectively etching and removing the oxide film on the first surface of the semiconductor substrate using the remaining photosensitive material as a mask.

In the method for manufacturing a semiconductor device,
After the etching step, a plating step of plating Ni on the first surface of the semiconductor substrate in which the oxide film selectively remains to form a Ni plating layer.
After the plating step, a screen printing step of forming a solder member on the Ni plating layer by printing a solder claim on the first surface of the semiconductor substrate and reflowing the solder claims.
After the screen printing step, a laser irradiation step of irradiating the first surface of the semiconductor substrate with a laser via the oxide film to form a notch in the first surface of the semiconductor substrate.
It is characterized by comprising a cutting step of cutting the semiconductor substrate along the cut after the laser irradiation step.

The light-shielding adsorption jig according to the embodiment according to one aspect of the present invention is
It is a light-shielding adsorption jig for adsorbing a photographic mask on a semiconductor substrate.
The light-shielding adsorption jig, which is arranged on the exposed surface of the photographic mask and engages the light-shielding adsorption jig with the photographic mask when the photographic mask is adsorbed on the semiconductor substrate, is engaged with the photographic mask. With the main body
It has an insertion portion that extends from the main body portion and is inserted into the suction hole of the photographic mask.
A ventilation hole is provided so as to penetrate the main body portion and the insertion portion.
In the exposure step, by sucking the first surface of the semiconductor substrate from the main body side of the light-shielding suction jig through the ventilation hole and the suction hole, the first surface side of the semiconductor substrate is sucked. It is characterized in that the contact surface of the photographic mask is attracted to the contact surface.

The method for manufacturing a semiconductor device according to one aspect of the present invention includes a coating step of applying a photosensitive material on an oxide film formed on the first surface (N surface) of a semiconductor substrate (wafer), and a light shielding after the coating step. A light-shielding suction jig is attached to the exposed surface of the semiconductor substrate so that the sex suction jig can suck the first surface of the semiconductor substrate from the suction hole penetrating the photo mask (N-side photo mask). The photosensitive material is fixed from the light source to the first surface (N surface) side of the semiconductor substrate by sucking the one surface (N surface) side with a light-shielding suction jig. The light-shielding adsorption jig comprises an exposure step of irradiating light to selectively expose the photosensitive material on the oxide film, and a development step of developing the exposed photosensitive material after the exposure step. It is designed to block the light output by the jig and prevent diffuse reflection.

That is, according to the method for manufacturing a semiconductor device of the present invention, while adsorbing (fixing) a photographic mask to a semiconductor substrate (wafer), light (ultraviolet rays) that exposes a photosensitive material (resist) is shielded from light to a predetermined position. The photosensitive material can be selectively exposed.

FIG. 1 is a diagram showing an example of a cross section of a semiconductor substrate (wafer) W viewed from the lateral direction in the exposure process of the method for manufacturing a semiconductor device of the present invention. FIG. 2 is a diagram showing an example of a case where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X at three positions of the regions Z. FIG. 3 is a cross-sectional view showing an example of the light-shielding adsorption jig X shown in FIG. FIG. 4 is a diagram showing an example of the appearance of the light-shielding adsorption jig X shown in FIG. 3 as viewed from the lateral direction (side surface side of the semiconductor substrate W). FIG. 5 is a diagram showing an example of the appearance of the light-shielding adsorption jig X shown in FIG. 3 as viewed from the vertical direction (the first surface side of the semiconductor substrate W). FIG. 6 is a diagram showing an example of the appearance of the first surface (N surface) of the semiconductor substrate W after forming the solder member in the region Z where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X. FIG. 7 is a diagram showing an example of a mask pattern on the second surface (P surface) side of the semiconductor substrate W in the vicinity of the region Z where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X. FIG. 8 is a diagram showing an example of the appearance of the second surface (P surface) of the semiconductor substrate W after forming the solder member in the region Z where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X. FIG. 9 is a cross-sectional view showing another example of the light-shielding adsorption jig X shown in FIG. FIG. 10 is a cross-sectional view showing another example of the light-shielding adsorption jig X shown in FIG. FIG. 11 is a cross-sectional view showing another example of the light-shielding adsorption jig X shown in FIG. FIG. 12 is a diagram showing an example of a cross section of a semiconductor substrate (wafer) viewed from the side in an exposure process of a conventional method for manufacturing a semiconductor device. FIG. 13 is a diagram showing an example of a mask pattern on the second surface (P surface) side of the semiconductor substrate in the vicinity of the region where the conventional semiconductor substrate is adsorbed. FIG. 14 is a diagram showing an example of the appearance of the second surface (P surface) of the semiconductor substrate after forming a film of the solder member in the region where the conventional semiconductor substrate is adsorbed. FIG. 15 is a diagram showing an example of the appearance of the first surface (N surface) of the semiconductor substrate W after forming a film of a solder member in a region where a conventional semiconductor substrate is adsorbed.

Hereinafter, embodiments according to the present invention will be described with reference to the drawings.

FIG. 1 is a diagram showing an example of a cross section of a semiconductor substrate (wafer) W viewed from the lateral direction in the exposure process of the method for manufacturing a semiconductor device of the present invention. Further, FIG. 2 is a diagram showing an example of a case where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X at three positions of the regions Z. Further, FIG. 3 is a cross-sectional view showing an example of the light-shielding adsorption jig X shown in FIG. Further, FIG. 4 is a diagram showing an example of the appearance of the light-shielding adsorption jig X shown in FIG. 3 as viewed from the lateral direction (side surface side of the semiconductor substrate W). Further, FIG. 5 is a diagram showing an example of the appearance of the light-shielding adsorption jig X shown in FIG. 3 as viewed from the vertical direction (the first surface W1 side of the semiconductor substrate W).

Hereinafter, the manufacturing method of the semiconductor device according to the first embodiment will be described in order of process.

First, a semiconductor substrate (wafer) W, which is a silicon substrate containing N-type impurities, is prepared, N-type impurities are diffused on the first surface W1 of the semiconductor substrate W, and the first surface of the semiconductor substrate W is diffused. P-type impurities are diffused on the second surface W2 on the opposite side of W1.

Then, an oxide film is formed on the first surface W1 and the second surface W2 of the semiconductor group W by, for example, thermal oxidation.

Then, the photosensitive material R is applied onto the oxide film formed on the first surface W1 (N surface) of the semiconductor substrate W (coating step).

The above-mentioned photosensitive material R is a negative type resist in the first embodiment. However, the photosensitive material R may be a positive resist depending on the process of the semiconductor device to be applied.

Then, after this coating step, the light-shielding suction jig X can suck the first surface W1 of the semiconductor substrate W from the suction hole Ma penetrating the photo mask M (N-plane photo mask). X is attached to the exposed surface MR of the photographic mask M, and the first surface W1 (N surface) side of the semiconductor substrate W is attracted by the light-shielding suction jig X to attract the contact surface MS of the photographic mask M (exposed surface MR). The photosensitive material R on the oxide film is irradiated with light from the light source L via the photographic mask M in a state where the opposite surface) is fixed to the first surface W1 (N surface) side of the semiconductor substrate W. R is selectively exposed to light to form a photosensitive portion Ra (exposure step).

In the first embodiment, the light source L is, for example, a mercury lamp. In this case, the light H output by the light source L is, for example, ultraviolet light.

The light source L may be an LED lamp.

Then, after this exposure step, the exposed photosensitive material R is developed (development step).

In the exposure process shown in FIG. 1, the first surface W1 (N surface) side of the semiconductor substrate W is in contact with the N surface photographic mask M, and the second surface W2 (P surface) side of the semiconductor substrate W is the P surface. Both sides are irradiated with ultraviolet rays (light) H through the N-plane and P-plane photographic masks of the lattice pattern without contacting the photographic mask (not shown).

By irradiating with ultraviolet rays H in this way, the photosensitive material R, which is a negative resist, is cured to form a grid-like pattern.

Since the photosensitive material R does not cure in the region not irradiated with the ultraviolet ray H, it is easily removed in the developing step of the next step. As described above, since the semiconductor substrate W is diffused with impurities, wafer warpage may occur.

As described above, this wafer warp causes unexposure or pattern misalignment due to positional misalignment during ultraviolet irradiation (exposure step) after resist coating.

Therefore, a plurality of suction holes Ma (for example, three places) are passed through the N-plane photographic mask M in contact with the semiconductor substrate W (FIG. 2), and the semiconductor substrate W is vacuumed during ultraviolet irradiation (exposure step). It is fixed (Fig. 1).

Then, after the development step described above, the oxide film on the first surface W1 (N surface) of the semiconductor substrate W is selectively etched and removed using the remaining photosensitive material R as a mask (etching step).

After that, although not shown, a mesa groove for cutting the semiconductor substrate W is formed for each chip on the second surface W2 (P surface) side of the semiconductor substrate W using the remaining oxide film as a mask, and the mesa groove is formed. A glass protective film is formed on the surface.

After that, Ni is plated on the first surface W1 (N surface) of the semiconductor substrate W in which the oxide film selectively remains to form a Ni plating layer (plating step).

After this plating step, a solder claim is printed on the first surface W1 (N surface) of the semiconductor substrate W and reflowed to form a solder member on the Ni plating layer (screen printing step).

Then, after the screen printing step, the first surface W1 of the semiconductor substrate W is irradiated with a laser via an oxide film to form a notch in the first surface W1 (N surface) of the semiconductor substrate W (laser irradiation step). ..

Then, after the laser irradiation step, the semiconductor substrate W is cut along the formed notch (cutting step).

By the above steps, the semiconductor device (semiconductor chip) is fragmented, and the semiconductor device is subjected to appearance inspection and characteristic inspection.

Here, the photographic mask M applied in the first embodiment will be described in detail.

The photographic mask M is, for example, a glass substrate on which a transmission region Mb that transmits light is selectively provided and a suction hole Ma is formed.

The cross section of the suction hole Ma on the surface of the photographic mask M parallel to the exposed surface MR has, for example, a circle or a polygon (triangle, square, etc.). In the first embodiment, the cross section of the suction hole Ma is round.

Further, the size of the cross section of the suction hole Ma on the surface parallel to the exposed surface MR of the photographic mask M is smaller than the size of the surface of one semiconductor device (semiconductor chip) formed on the semiconductor substrate W. Is set to.

Next, the light-shielding adsorption jig applied in the first embodiment will be described in detail.

The light-shielding adsorption jig X is a jig for adsorbing the photographic mask M to the semiconductor substrate W, and is designed to block the light output by the light source L and prevent diffuse reflection.

The light-shielding suction jig X has, for example, a main body portion Xb and an insertion portion Xh, as shown in FIGS. 1 and 3.

The main body Xb is arranged on the exposed surface MR of the photographic mask M, and when the photographic mask M is adsorbed on the semiconductor substrate W, the light-shielding adsorption jig X is locked to the photographic mask M.

The insertion portion Xh extends from the main body portion Xb and is inserted into the suction hole Ma of the photographic mask M.

The light-shielding suction jig X is provided with ventilation holes A1 and A2 that penetrate the main body portion Xb and the insertion portion Xh.

Then, in the above-mentioned exposure step, the first surface W1 of the semiconductor substrate W is sucked from the main body Xb side of the light-shielding suction jig X through the ventilation holes A1 and A2 and the suction holes Ma (exposure of the photo mask M). By setting the surface MR side to a negative pressure), the contact surface MS of the photographic mask M is attracted to the first surface W1 side of the semiconductor substrate W.

Further, the ventilation holes A1 and A2 of the light-shielding adsorption jig X are provided so that the light output by the light source L does not directly reach the surface of the photosensitive material R through the ventilation holes A1 and A2 in the exposure process. ing.

Further, in a state where the insertion portion Xh of the light-shielding suction jig X is inserted into the suction hole Ma of the photo mask M, the insertion portion of the light-shielding suction jig X on the surface parallel to the exposed surface MR of the photo mask M. The cross section of Xh has a round shape or a polygonal shape (triangle, square, etc.).

Further, the cross sections of the ventilation holes A1 and A2 of the light-shielding suction jig X on the surface parallel to the insertion direction of the photo mask M of the insertion portion Xh of the light-shielding suction jig X into the suction hole Ma are T-shaped. It has become. As will be described later, the cross sections of the ventilation holes A1 and A2 of the light-shielding suction jig X may be, for example, L-shaped, substantially Y-shaped, or staggered.

The light-shielding adsorption jig X is made of, for example, a resin, rubber, or an inorganic substance (SiC or the like).

Here, FIG. 6 shows an example of the appearance of the first surface W1 (N surface) of the semiconductor substrate W after forming the solder member in the region Z where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X. It is a figure. Further, FIG. 7 shows an example of a mask pattern (P-plane photo mask) on the second surface W2 (P-plane) side of the semiconductor substrate W in the vicinity of the region Z where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X. It is a figure which shows. Further, FIG. 8 is a diagram showing an example of the appearance of the second surface W2 (P surface) of the semiconductor substrate W after forming the solder member in the region Z where the semiconductor substrate W is adsorbed by the light-shielding adsorption jig X. Is.

As shown in FIGS. 6 to 8, even in the vicinity of the region Z adsorbed by the light-shielding adsorption jig X, the photosensitive material R is not exposed to light in the exposure process, so that Ni-plated and solder-non-adhered portions due to the residue of the oxide film are formed. Since it is eliminated, ordinary electrodes are formed, and the yield of the semiconductor chip is improved.

As described above, in the method for manufacturing a semiconductor device according to the first embodiment of the present invention, the method for manufacturing a semiconductor device is a photosensitive material on an oxide film formed on the first surface (N surface) of a semiconductor substrate (wafer). After the coating step and the coating step, the light-shielding suction jig is provided so that the first surface of the semiconductor substrate can be sucked from the suction hole penetrating the photo mask (N-side photo mask). The second surface (contact surface) of the photographic mask is made of the semiconductor substrate by mounting it on the first surface (exposed surface) of the photographic mask and sucking the first surface (N surface) side of the semiconductor substrate with a light-shielding suction jig. After the exposure step, in which the photosensitive material is selectively exposed to light on the oxide film by irradiating the photosensitive material with light from a light source through a photographic mask while being fixed to the first surface (N surface) side, and after the exposure step. It comprises a developing process for developing a photosensitive material that has been exposed to light. The light-shielding adsorption jig shields the light output from the light source and does not diffusely reflect the light.

That is, according to the method for manufacturing a semiconductor device according to the first embodiment, the photographic mask is adsorbed (fixed) on the semiconductor substrate (wafer) while the light (ultraviolet rays) that exposes the photosensitive material (resist) is shielded from light (ultraviolet rays). The photosensitive material at the position of can be selectively exposed.

In the above-mentioned Example 1, an example of the light-shielding adsorption jig X has been described. However, as described above, the light-shielding adsorption jig may be configured so as to block the light output by the light source L and not diffusely reflect it.

Therefore, in the second embodiment, another example of the light-shielding adsorption jig X configured to block the light output by the light source L and prevent diffuse reflection will be described.

9 to 11 are cross-sectional views showing another example of the light-shielding adsorption jig X shown in FIG. 1.

For example, as shown in FIGS. 9 to 11, on a plane parallel to the insertion direction of the photographic mask M of the insertion portion Xh of the light-shielding suction jig X into the suction hole Ma (a plane perpendicular to the exposed surface MR). The cross sections of the ventilation holes A1 and A2 of the light-shielding suction jig X may be, for example, L-shaped (FIG. 9), substantially Y-shaped (10), or staggered (FIG. 11).

The other configurations of the method for manufacturing the semiconductor device according to the second embodiment are the same as those in the first embodiment.

That is, according to the method for manufacturing a semiconductor device according to the second embodiment, the photographic mask is adsorbed (fixed) on the semiconductor substrate (wafer) while the light (ultraviolet rays) that exposes the photosensitive material (resist) is shielded from light (ultraviolet rays). The photosensitive material at the position of can be selectively exposed.

As described above, the method for manufacturing a semiconductor device according to one aspect of the present invention includes a coating step of coating a photosensitive material on an oxide film formed on the first surface (N surface) of a semiconductor substrate (wafer) and coating. After the process, the light-shielding suction jig is attached to the exposed surface of the photo mask so that the first surface of the semiconductor substrate can be sucked from the suction hole penetrating the photo mask (N-side photo mask). , The contact surface of the photographic mask is fixed to the first surface (N surface) side of the semiconductor substrate by sucking the first surface (N surface) side of the semiconductor substrate with a light-shielding adsorption jig, and the photographic mask is sent from the light source. It is provided with an exposure step of selectively exposing the photosensitive material on the oxide film by irradiating the photosensitive material with light via a light source, and a developing step of developing the exposed photosensitive material after the exposure step. The jig is designed to block the light output from the light source and prevent diffuse reflection.

That is, according to the method for manufacturing a semiconductor device of the present invention, while adsorbing (fixing) a photographic mask to a semiconductor substrate (wafer), light (ultraviolet rays) that exposes a photosensitive material (resist) is shielded from light to a predetermined position. The photosensitive material can be selectively exposed.

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and variations thereof are included in the scope of the invention described in the claims and the equivalent scope thereof, as are included in the scope and gist of the invention.

W Semiconductor substrate W1 First surface W2 Second surface R Photosensitive material X Light-shielding suction jig Xb Main body Xh Insertion part M Photo mask suction hole Ma
MR exposed surface MS contact surface L light source A1, A2 vent hole

Claims (15)

The coating process of applying the photosensitive material on the oxide film formed on the first surface of the semiconductor substrate, and
After the coating step, the light-shielding suction jig is attached to the exposed surface of the photo mask so that the light-shielding suction jig can suck the first surface of the semiconductor substrate from the suction hole penetrating the photographic mask. The photographic mask is removed from the light source in a state where the contact surface of the photographic mask is fixed to the first surface side of the semiconductor substrate by sucking the first surface side of the semiconductor substrate with the light-shielding suction jig. An exposure step of irradiating the photosensitive material with light through the light source to selectively expose the photosensitive material on the oxide film.
After the exposure step, a developing step of developing the exposed photosensitive material is provided.
The light-shielding adsorption jig is a method for manufacturing a semiconductor device, characterized in that the light output by the light source is shielded from light and is not diffusely reflected. The light-shielding adsorption jig is
A main body portion that is arranged on the exposed surface of the photographic mask and engages the light-shielding adsorption jig with the photographic mask when the photographic mask is adsorbed on the semiconductor substrate.
It has an insertion portion that extends from the main body portion and is inserted into the suction hole of the photographic mask, and is provided with a ventilation hole that penetrates the main body portion and the insertion portion.
In the exposure step, by sucking the first surface of the semiconductor substrate from the main body side of the light-shielding suction jig through the ventilation hole and the suction hole, the first surface side of the semiconductor substrate is attracted. The method for manufacturing a semiconductor device according to claim 1, wherein the contact surface of the photographic mask is adsorbed on the surface. The ventilation hole of the light-shielding adsorption jig is provided so that the light output by the light source does not directly reach the surface of the photosensitive material through the ventilation hole in the exposure step. The method for manufacturing a semiconductor device according to claim 2. The method for manufacturing a semiconductor device according to claim 3, wherein the cross section of the suction hole on the surface parallel to the exposed surface of the photographic mask has a round or polygonal shape. A cross section of the insertion portion of the light-shielding suction jig on a surface parallel to the exposed surface of the photo mask in a state where the insertion portion of the light-shielding suction jig is inserted into the suction hole of the photo mask. The method for manufacturing a semiconductor device according to claim 3, wherein the semiconductor device has a circular or polygonal shape. The cross section of the ventilation hole of the light-shielding suction jig on the surface parallel to the direction in which the photomask of the insertion portion of the light-shielding suction jig is inserted into the suction hole is Y-shaped or L-shaped. The method for manufacturing a semiconductor device according to claim 3, wherein the semiconductor device is T-shaped or staggered. The method for manufacturing a semiconductor device according to claim 3, wherein the size of the cross section of the suction hole is smaller than the size of the surface of one semiconductor chip formed on the semiconductor substrate. The method for manufacturing a semiconductor device according to claim 1, wherein the light-shielding adsorption jig is made of a resin, rubber, or an inorganic substance. The method for manufacturing a semiconductor device according to claim 1, wherein the photosensitive material is a negative resist. The method for manufacturing a semiconductor device according to claim 9, wherein the light is ultraviolet light. The method for manufacturing a semiconductor device according to claim 10, wherein the light source is a mercury lamp. The photo mask is
The method for manufacturing a semiconductor device according to claim 11, wherein a transmission region for transmitting light is selectively provided and the glass substrate is formed with the suction holes. 12. It is characterized by further comprising an etching step of selectively etching and removing the oxide film on the first surface of the semiconductor substrate using the remaining photosensitive material as a mask after the developing step. The method for manufacturing a semiconductor device according to the above. After the etching step, a plating step of plating Ni on the first surface of the semiconductor substrate in which the oxide film selectively remains to form a Ni plating layer.
After the plating step, a screen printing step of forming a solder member on the Ni plating layer by printing a solder claim on the first surface of the semiconductor substrate and reflowing the solder claims.
After the screen printing step, a laser irradiation step of irradiating the first surface of the semiconductor substrate with a laser via the oxide film to form a notch in the first surface of the semiconductor substrate.
The method for manufacturing a semiconductor device according to claim 13, further comprising a cutting step of cutting the semiconductor substrate along the cut after the laser irradiation step. It is a light-shielding adsorption jig for adsorbing a photographic mask on a semiconductor substrate.
The light-shielding adsorption jig, which is arranged on the exposed surface of the photographic mask and engages the light-shielding adsorption jig with the photographic mask when the photographic mask is adsorbed on the semiconductor substrate, is engaged with the photographic mask. With the main body
It has an insertion portion that extends from the main body portion and is inserted into the suction hole of the photographic mask.
A ventilation hole is provided so as to penetrate the main body portion and the insertion portion.
In the exposure step, by sucking the first surface of the semiconductor substrate from the main body side of the light-shielding suction jig through the ventilation hole and the suction hole, the semiconductor substrate is attracted to the first surface side. A light-shielding suction jig characterized by being designed to suck the contact surface of a photographic mask.

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