JP7029624B2 - Display device and its manufacturing method - Google Patents

Description

The embodiment relates to a display device and a method for manufacturing the same.

As shown in Patent Document 1, in recent years, a display device using a micro LED (Light Emitting Diode) as a pixel has been proposed. Since the pixels of such a display device are composed of self-luminous elements, the resolution, contrast, and color reproducibility of such a display device are higher than those of a display device using a liquid crystal panel. Further, since the micro LED is mainly formed of an inorganic semiconductor material, it has a longer life and is less likely to cause seizure as compared with an organic EL (Organic Electro-Luminescence) element using an organic material.

However, in a display device using a micro LED, it is necessary to extract light from the upper surface of the light emitting element and to connect the lower surface and the upper surface of the light emitting element to wiring. Therefore, on the upper surface of the light emitting element, it is required to achieve both high conductivity and high light transmission. As a result, in the manufacturing process of the display device using the micro LED, there is a problem that the process of mounting the light emitting element on the substrate becomes difficult and the manufacturing cost becomes high.

Japanese Unexamined Patent Publication No. 2006-140247

One embodiment of the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a display device having a low manufacturing cost and a manufacturing method thereof by using a micro LED as a pixel.

In the method for manufacturing a display device according to an embodiment of the present invention, a substrate in which subpixels are set and a first wiring is provided for each subpixel, and a substrate in which a first electrode is provided on the lower surface and intersects with each other at least. A step of preparing a light emitting element provided with a second electrode on two side surfaces, a step of mounting the light emitting element on the substrate, and a step of electrically connecting the first electrode to the first wiring, and the above. A step of forming a resin member covering the light emitting element on a substrate, a step of exposing a part of the second electrode from the upper surface of the resin member by removing the upper portion of the resin member, and the resin member. Above, a step of forming a mesh-like second wiring so that a part of the wiring is arranged on the light emitting element and electrically connecting the second wiring to the second electrode is provided.

The display device according to the embodiment of the present invention includes a substrate on which subpixels are set, a first wiring provided for each subpixel on the substrate, and light emission mounted on the substrate for each subpixel. It includes an element, a resin member that covers the lower portion of the light emitting element and the first wiring, and a mesh-like second wiring provided on the resin member and partially arranged on the light emitting element. The light emitting element is provided on a semiconductor member, a first electrode provided on the lower surface of the semiconductor member and electrically connected to the first wiring, and at least two side surfaces intersecting each other of the semiconductor member. It has a second electrode partially exposed from the upper surface of the resin member. The second wiring is electrically connected to a portion of the second electrode exposed on the resin member.

According to one embodiment of the present invention, a display device having a low manufacturing cost and a manufacturing method thereof can be realized by using a micro LED as a pixel.

It is a top view which shows the display device which concerns on 1st Embodiment. It is an end view by the AA'line shown in FIG. It is an end view by the BB'line shown in FIG. It is a top view which shows the light emitting element of the display device which concerns on 1st Embodiment. It is an end view which shows the light emitting element of the display device which concerns on 1st Embodiment. It is a top view which shows the light emitting element of the display device which concerns on 1st Embodiment. FIG. 4 is an end view taken along the line CC'shown in FIG. 4A. It is a top view which shows the 2nd electrode of the light emitting element of the display device which concerns on 1st Embodiment. It is a top view which shows the 1st electrode of the light emitting element of the display device which concerns on 1st Embodiment. It is an end view which shows the manufacturing method of the display device which concerns on 1st Embodiment. It is an end view which shows the manufacturing method of the display device which concerns on 1st Embodiment. It is an end view which shows the manufacturing method of the display device which concerns on 1st Embodiment. It is an end view which shows the manufacturing method of the display device which concerns on 1st Embodiment. It is an end view which shows the manufacturing method of the display device which concerns on 1st Embodiment. It is an end view which shows the light emitting element of the display device which concerns on 2nd Embodiment. It is an end view which shows the light emitting element of the display device which concerns on 3rd Embodiment. It is a top view which shows the light emitting element of the display device which concerns on 4th Embodiment. It is a top view which shows the light emitting element of the display device which concerns on 5th Embodiment.

<First Embodiment>
First, the first embodiment will be described.

The display device 1 according to the present embodiment includes a substrate 20, a first wiring 21 provided for each subpixel 11 on the substrate 20, a light emitting element 30 mounted on the substrate 20 for each subpixel 11, and a light emitting element. It includes a resin member 23 that covers the lower portion of the 30 and the first wiring 21, and a mesh-like second wiring 24 that is provided on the resin member 23 and is partially arranged on the light emitting element 30. The light emitting element 30 is provided on the semiconductor member 31, the lower surface 31a of the semiconductor member 31, the first electrode 35 electrically connected to the first wiring 21, and at least two side surfaces 31b of the semiconductor member 31 intersecting each other. The second electrode 33 is provided in the above and is partially exposed from the upper surface 23a of the resin member 23. The second wiring 24 is electrically connected to a portion of the second electrode 33 exposed on the resin member 23.

Hereinafter, the configuration of the display device 1 will be described in detail.
As shown in FIGS. 1, 2A and 2B, the display device 1 according to the present embodiment is provided with the substrate 20. In the substrate 20, wiring is provided in the insulating base material. Further, an active matrix transistor is formed on the substrate 20. The active matrix transistor is a switching element that switches whether or not to supply electric power to the light emitting element 30 for each subpixel 11.

A plurality of pixels 10 are set on the substrate 20. Pixels 10 are arranged in a matrix along a first direction and a second direction orthogonal to each other. One or more, for example, three sub-pixels 11 are set in each pixel 10. In one example, the three sub-pixels 11 included in each pixel 10 are a sub-pixel 11R that outputs red light, a sub-pixel 11G that outputs green light, and a sub-pixel 11B that outputs blue light. The number of sub-pixels 11 included in each pixel 10 is not limited to three. In FIG. 1, the outer edge of one pixel 10 is represented by a two-dot chain line, and the outer edge of one sub-pixel 11R is represented by a broken line.

The first wiring 21 is provided on the substrate 20. When viewed from above, the shape of the first wiring 21 is an island shape partitioned by each subpixel 11, and is electrically connected to the wiring of the substrate 20. The surface of the first wiring 21 preferably has a high reflectance of light. As a result, a part of the light emitted from the light emitting element 30 is reflected upward, and the brightness of the subpixel 11 can be improved. Further, on the substrate 20, electrodes 22 are provided between the sub-pixels 11. When viewed from above, the shape of the electrode 22 is, for example, a grid pattern. The first wiring 21 and the electrode 22 contain a metal and are made of, for example, a metal material having the same conductivity, for example, silver (Ag) or copper (Cu). For example, the thickness of the first wiring 21 is substantially equal to the thickness of the electrode 22. The reflectance of light on the surface of the electrode 22 is preferably lower than the reflectance of light on the surface of the first wiring 21. As a result, the brightness of the area between the sub-pixels 11 can be reduced and the contrast of the screen can be improved. In order to reduce the reflectance of light, the surface of the electrode 22 may be, for example, roughened or formed with a black film.

A light emitting element 30 is provided on the first wiring 21. The light emitting element 30 is mounted on the substrate 20 via the first wiring 21. The light emitting element 30 is a micro LED. When viewed from above, the shape of the micro LED is, for example, a rectangle having a side length of about 5 μm to 100 μm, preferably about 10 μm to 50 μm. One or more, preferably two or more, for example, two light emitting elements 30 are arranged in each subpixel 11. In one example, a light emitting element 30 that outputs red light is arranged in the subpixel 11R, a light emitting element 30 that outputs green light is arranged in the subpixel 11G, and a blue light is output to the subpixel 11B. The light emitting element 30 is arranged. The light emitting element 30 may be arranged in one or more in each subpixel 11, and may not necessarily be arranged in one direction.

A resin member 23 is provided on the substrate 20 for each subpixel 11. The resin member 23 is made of an insulating resin material. The shape of the resin member 23 is, for example, a substantially rectangular parallelepiped or a square pyramidal trapezoid. The first wiring 21 is entirely covered with the resin member 23. The lower portion of the light emitting element 30 is covered with the resin member 23, and the upper portion is exposed from the upper surface 23a of the resin member 23. Both ends in the width direction of the electrode 22 are covered with the resin member 23, and the central portion in the width direction of the electrode 22 is exposed between the resin members 23.

A mesh-like second wiring 24 is provided on the upper surface 23a and the side surface 23b of the resin member 23. The second wiring 24 has a plurality of first straight line portions 24a extending in the first direction and a plurality of second straight line portions 24b extending in the second direction. The second straight line portion 24b is connected to the first straight line portion 24a. A part of the second wiring 24 is arranged on the light emitting element 30, and passes through the upper surface of the light emitting element 30. Therefore, a part of the upper surface or a part of the side surface of each light emitting element 30 is in contact with the second wiring 24. Both ends of the first straight line portion 24a and both ends of the second straight line portion 24b of the second wiring 24 are connected to the electrode 22. As a result, all the second wirings 24 are connected to each other via the electrodes 22.

Next, the configuration of the light emitting element 30 will be described in detail.
As shown in FIGS. 3A and 3B, FIGS. 4A and 4B, and FIGS. 5A and 5B, in the light emitting element 30, the semiconductor member 31, the light reflecting layer 32, the second electrode 33, the insulating layer 34, and the first electrode 35 are used. , A protective layer 36, a first conductive layer 37, and a second conductive layer 38 are provided. When viewed from above, the shape of the light emitting element 30 is, for example, a rectangle. 3A and 3B are schematic views, and only the semiconductor member 31, the first electrode 35, the second electrode 33, and the light reflecting layer 32 are shown in a simplified manner, and other components are omitted. The same applies to FIGS. 10 and 11 described later. 4A to 5B are views showing the configuration of the light emitting element 30 in detail. In order to make the figure easier to see, in FIG. 5A, the second electrode 33 is hatched, and in FIG. 5B, the first electrode 35 is hatched. Further, in FIGS. 4A, 5A, and 5B, the semiconductor member 31 is omitted.

As shown in FIG. 4B, the shape of the semiconductor member 31 is substantially an inverted quadrangular pyramid trapezoid, and has a lower surface 31a, four side surfaces 31b, and an upper surface 31c. For example, the upper surface 31c is roughened. In the semiconductor member 31, the first semiconductor layer 31p, the light emitting layer 31t, and the second semiconductor layer 31n are laminated. A first conductive layer 37 is provided on the lower surface of the first semiconductor layer 31p, and a second conductive layer 38 is provided on, for example, the central portion of the lower surface of the second semiconductor layer 31n.

An insulating light reflecting layer 32 is provided on the lower surface 31a and the side surface 31b of the semiconductor member 31. The light reflecting layer 32 is, for example, a DBR (Distributed Bragg Reflector), and is, for example, a multilayer film in which niobium oxide layers (NbO) and aluminum oxide layers (AlO) are alternately laminated. The openings 32a and 32b are formed in the portion of the light reflecting layer 32 arranged below the semiconductor member 31. The opening 32a is formed, for example, in a region including the center of the lower surface 31a, and the shape thereof is, for example, a circle. In a plan view, the second conductive layer 38 is arranged inside the opening 32a. The openings 32b are formed in two places, for example, around the diagonal of the lower surface 31a, and the shape thereof is, for example, a substantially right-angled isosceles triangle whose hypotenuse is a concave arc. In a plan view, the first semiconductor layer 31p and the light emitting layer 31t of the semiconductor member 31, and the first conductive layer 37 are arranged only inside the opening 32b. On the other hand, in a plan view, the second semiconductor layer 31n of the semiconductor member 31 is arranged in the entire region surrounded by the light reflecting layer 32.

A second electrode 33 is provided on the outside of the light reflecting layer 32. That is, the second electrode 33 is arranged on the lower surface 31a and the side surface 31b of the semiconductor member 31 via the light reflecting layer 32. In other words, the light reflecting layer 32 is provided between the lower surface 31a and the side surface 31b of the semiconductor member 31 and the second electrode 33. The second electrode 33 reaches the upper end of the side surface 31b of the semiconductor member 31, and a part of the second electrode 33 is exposed from the upper surface 23a of the resin member 23. The second electrode 33 is made of a metal material, for example, silver or aluminum.

The portion of the second electrode 33 corresponding to the opening 32a of the light reflecting layer 32 projects upward so as to enter the opening 32a. The second electrode 33 is electrically connected to the second conductive layer 38 via the opening 32a of the light reflecting layer 32. The second conductive layer 38 is electrically connected to the second semiconductor layer 31n of the semiconductor member 31 on the lower surface 31a of the semiconductor member 31. On the other hand, an opening 33a is formed in a portion of the second electrode 33 corresponding to the opening 32b of the light reflecting layer 32. That is, the second electrode 33 is not provided in the region directly below the opening 32b.

In the present embodiment, the shape of the second electrode 33 is a cup shape that wraps the surface other than the upper surface 31c of the semiconductor member 31, and the second electrode 33 is provided around the semiconductor member 31 when viewed from above. That is, the second electrode 33 is provided on all four side surfaces 31b of the semiconductor member 31. However, as will be described later, the second electrode 33 may be provided on at least two side surfaces 31b of the semiconductor member 31 that intersect each other. Further, the second electrode 33 is arranged in a region corresponding to the opening 32a of the light reflecting layer 32 on the lower surface 31a of the semiconductor member 31, and is connected to a portion provided on the side surface 31b of the second electrode 33. There is.

An insulating layer 34 is provided so as to cover the lower portion of the second electrode 33. The portion of the insulating layer 34 corresponding to the opening 32a of the light reflecting layer 32 projects upward so as to enter the opening 32a. On the other hand, an opening 34a is formed in a portion of the insulating layer 34 corresponding to the opening 32b of the light reflecting layer 32. That is, the insulating layer 34 is not provided in the region directly below the opening 32b. The upper end of the insulating layer 34 is located lower than the upper end of the second electrode 33. Therefore, the insulating layer 34 does not cover the upper part of the second electrode 33. Since the insulating layer 34 does not cover the upper part of the second electrode 33, the second electrode 33 can be electrically connected to the second wiring 24, as will be described later.

A first electrode 35 is provided below the insulating layer 34. The first electrode 35 is made of a metal material, for example, a metal containing silver or copper, and may be silver or copper. The first electrode 35 is provided on substantially the entire lower surface 31a of the semiconductor member 31 via the light reflecting layer 32, the second electrode 33, and the insulating layer 34. The portions of the first electrode 35 corresponding to the opening 32a and the opening 32b of the light reflecting layer 42 project upward so as to enter the inside of the opening 32a and the inside of the opening 32b, respectively. The first electrode 35 is electrically connected to the first conductive layer 37 via the opening 34a of the insulating layer 34, the opening 33a of the second electrode 33, and the opening 32b of the light reflecting layer 32. The first conductive layer 37 is electrically connected to the first semiconductor layer 31p of the semiconductor member 31 on the lower surface 31a of the semiconductor member 31. A protective layer 36 is provided on the upper surface 31c of the semiconductor member 31.

Then, on the lower surface of the light emitting element 30, the first electrode 35 is electrically connected to the first wiring 21. The first semiconductor layer 31p of the semiconductor member 31 of the light emitting element 30 is connected to the active matrix transistor via wiring in the first conductive layer 37, the first electrode 35, the first wiring 21, and the substrate 20. On the other hand, the second semiconductor layer 31n is connected to the second electrode 33 via the second conductive layer 38. A part of the upper portion of the light emitting element 30 exposed from the upper surface 23a of the resin member 23 in the second electrode 33 is electrically connected to the second wiring 24. As a result, electric power is supplied between the first semiconductor layer 31p and the second semiconductor layer 31n of the semiconductor member 31. In FIG. 4B, the second wiring 24 is shown by a two-dot chain line.

As shown in FIG. 1, in the display device 1, the disconnection portion 24c can be formed in the second wiring 24. As a result, the defective light emitting element 30x can be separated from the second wiring 24. The defect of the light emitting element 30x is, for example, a short circuit, a disconnection, an unstable continuity, or the like.

Next, a method of manufacturing the display device according to the present embodiment will be described.
6A to 7C are end views showing a method of manufacturing a display device according to the present embodiment.

(Step of preparing the substrate 20 and the light emitting element 30)
First, as shown in FIG. 6A, the substrate 20 and the light emitting element 30 are prepared. Pixels 10 are arranged in a matrix on the substrate 20, and each pixel 10 contains one or more sub-pixels 11. A first wiring 21 is provided for each subpixel 11 on the upper surface 20a of the substrate 20, and an electrode 22 is provided between the subpixels 11. A conductive paste layer 102 is provided on the first wiring 21.

The light emitting element 30 is adhered to, for example, the lower surface 100a of the support substrate 100 by an adhesive sheet 101. One or more, preferably two or more, for example, two light emitting elements 30 are adhered to a region corresponding to each subpixel 11 in the support substrate 100. The configuration of the light emitting element 30 is as described above. That is, the first electrode 35 is provided on the lower surface of the light emitting element 30, and the second electrode 33 is provided on at least two side surfaces that intersect each other, for example, four side surfaces.

(Step of mounting the light emitting element 30 on the substrate 20 and connecting the first electrode 35 to the first wiring 21)
Next, as shown in FIG. 6B, the lower surface 100a of the support substrate 100 to which the light emitting element 30 is adhered faces the upper surface 20a of the substrate 20, and the first electrode 35 of the light emitting element 30 hits the conductive paste layer 102. Get in touch. Next, the conductive paste layer 102 is sintered. As a result, the first electrode 35 of the light emitting element 30 is electrically connected to the first wiring 21, and the light emitting element 30 is mounted on the substrate 20. Hereinafter, the conductive paste layer 102 is shown as a part of the first wiring 21.

Next, the adhesive sheet 101 is removed, for example, by dissolving it. As a result, the support substrate 100 is peeled off from the light emitting element 30. In this way, the light emitting element 30 is transferred from the support substrate 100 to the substrate 20. At this time, for example, two light emitting elements 30 are mounted on each subpixel 11. Further, when viewed from above, the shape of the light emitting element 30 is, for example, a rectangle.

(Step of forming the resin member 23)
Next, as shown in FIG. 7A, a resin member 23 that covers the light emitting element 30 is formed on the substrate 20. For example, a photosensitive resin is applied to the upper surface 20a of the substrate 20, developed and cured. Alternatively, a dry film made of a photosensitive resin is attached to the upper surface 20a of the substrate 20. In this way, the resin member 23 is formed. At this point, the resin member 23 covers all of the plurality of light emitting elements 30 mounted on the plurality of subpixels 11.

(Step of exposing the second electrode 33 from the resin member 23)
Next, as shown in FIG. 7B, the resin member is subjected to etching, for example, RIE (Reactive Ion Etching) using oxygen gas (O ₂ ) on the upper surface 23a of the resin member 23. Remove the top of 23. As a result, the upper portion of the light emitting element 30 including the upper portion of the second electrode 33 is exposed from the upper surface 23a of the resin member 23. Further, at this time, the resin member 23 is divided into subpixels 11 to expose the electrodes 22. As a result, the shape of the resin member 23 becomes, for example, a substantially rectangular parallelepiped or a square trapezoid.

(Step of forming the second wiring 24 on the resin member 23)
Next, as shown in FIGS. 1 and 7C, a mesh-like second wiring 24 is formed on the resin member 23. For example, a conductive paste is applied to the entire surface by a spin coating method, sintered, and then processed into a mesh shape by a photolithography method. As a result, a second wiring 24 including a first straight line portion 24a extending in the first direction and a second straight line portion 24b extending in the second direction is formed on the upper surface 23a and the side surface 23b of the resin member 23.

For example, the first direction and the second direction are, but are not limited to, two directions in which the pixels 10 are arranged. The figure surrounded by the two first straight line portions 24a and the two second straight line portions 24b is not limited to a rectangle, and may be a parallelogram. Further, the second wiring 24 may have a third straight line portion extending in the third direction. For example, the shape of the second wiring 24 seen from above may be a shape in which triangles are arranged. It may be a honeycomb shape in which squares are arranged. In the present specification, these shapes are also included in the "mesh-like".

When viewed from above, the distance between the first straight line portion 24a and the distance between the second straight line portions 24b are set to be equal to or less than the length of one side of the light emitting element 30, so that a part of the second wiring 24 is surely a light emitting element. Placed on 30. When viewed from above, since the second electrode 33 is provided around the semiconductor member 31 of the light emitting element 30, the second wiring 24 comes into contact with the second electrode 33 of each light emitting element 30 and is electrically connected. Ru. Further, the second wiring 24 also contacts the electrode 22 and is electrically connected. As a result, the second electrodes 33 of all the light emitting elements 30 are commonly connected to the second wiring 24. In this way, the light emitting element 30 is connected to the first wiring 21 and the second wiring 24.

(Step of separating the defective light emitting element 30x from the second wiring 24)
Next, as shown in FIG. 1, when each light emitting element 30 is inspected and a defective light emitting element 30x is detected, the first straight portion 24a and the second straight line of the second wiring 24 connected to the light emitting element 30x are detected. The portion 24b is cut by, for example, laser processing, and the light emitting element 30x is separated from the second wiring 24. After that, the surfaces of the electrode 22 and the second wiring 24 are roughened to make the surface matte, or blackened to form a black film, whereby the electrodes 22 and the second wiring 24 are formed. Reduces the reflectance of light in. This improves the contrast of the screen. In this way, the display device 1 according to the present embodiment is manufactured.

Next, the effect of this embodiment will be described.
In the display device 1 according to the present embodiment, in each light emitting element 30, the second electrode 33 is provided on at least two side surfaces 31b of the semiconductor member 31 that intersect each other. Further, the shape of the second wiring 24 is mesh-like in the top view. Therefore, even if the position and angle of the light emitting element 30 deviate slightly from the design, the second electrode 33 of each light emitting element 30 comes into contact with the second wiring 24 at any part. Therefore, even if the position accuracy when the light emitting element 30 is mounted on the substrate 20 is not excessively precise, the light emitting element 30 is as long as the first electrode 35 of the light emitting element 30 is accurate enough to come into contact with the first wiring 21. Can be electrically connected to the first wiring 21 and the second wiring 24. Therefore, the margin of the position and the angle when the light emitting element 30 is mounted on the substrate 20 is large. As a result, the display device 1 is easy to manufacture and the manufacturing cost is low.

Further, in the present embodiment, since the second electrode 33 is arranged on the side surface of the light emitting element 30, the second electrode 33 does not need to cover the upper surface of the semiconductor member 31. Therefore, the light emitted upward from the semiconductor member 31 can be efficiently used. Further, by making the shape of the second wiring 24 into a mesh shape, a part of the light emitted laterally from the light emitting element 30 can be reflected upward by the second wiring 24. This also makes it possible to improve the efficiency of light utilization.

Further, since the second wiring 24 is made of metal, the electrical resistance of the wiring is lower than that of the case where the second wiring 24 is made of a conductive transparent material such as ITO (Indium-Tin-Oxide). Therefore, the display device 1 has high power utilization efficiency.

Furthermore, in the display device 1, two light emitting elements 30 are provided for each subpixel 11. The two light emitting elements 30 are connected in parallel between the first wiring 21 and the second wiring 24. If the two light emitting elements 30 arranged in a certain subpixel 11 are both normal, a current flows in parallel to the two light emitting elements 30. On the other hand, when one of the two light emitting elements 30 has a defect, the defective light emitting element 30x is separated from the second wiring 24 by forming the disconnection portion 24c in the second wiring 24. This makes it possible to prevent the defect of the light emitting element 30 from immediately becoming a defect of the subpixel 11, for example, a bright spot or a dark spot. In this case, since the defective light emitting element 30x is separated from the current circuit, twice the normal current flows through one normal light emitting element 30, and about twice as much light is output. Therefore, the brightness of the entire subpixel 11 is substantially the same regardless of whether the light emitting element 30 having a defect is present in the subpixel 11 or one light emitting element 30 having a defect is present.

As described above, according to the present embodiment, the light emitting element 30 arranged in the sub pixel 11 can be provided with redundancy, and even if a defect occurs in one light emitting element 30, the sub pixel 11 functions normally. Can be made to. As a result, the yield of the display device 1 can be improved and the manufacturing cost can be reduced. In addition, each subpixel 11 may be provided with three or more light emitting elements 30.

<Second embodiment>
Next, the second embodiment will be described.
FIG. 8 is an end view showing a light emitting element of the display device according to the present embodiment.

As shown in FIG. 8, in the display device according to the present embodiment, a light emitting element 30a is provided. In the light emitting element 30a, the second electrode 33 reaches the peripheral portion on the upper surface 31c of the semiconductor member 31. As a result, the second wiring 24 can be reliably connected to the second electrode 33. The configurations, manufacturing methods, and effects other than the above in the present embodiment are the same as those in the first embodiment.

<Third embodiment>
Next, a third embodiment will be described.
FIG. 9 is an end view showing a light emitting element of the display device according to the present embodiment.

As shown in FIG. 9, in the display device according to this embodiment, a light emitting element 30b is provided. In the light emitting element 30b, the second electrode 33 is divided into a first portion 33b and a second portion 33c. The first portion 33b is provided on the lower surface 31a and the side surface 31b of the semiconductor member 31, and the second portion 33c is provided on the peripheral portion of the upper surface 31c of the semiconductor member 31. The second portion 33c is separated from the first portion 33b. Further, the light emitting element 30b is provided with a metal plating layer 39. The metal plating layer 39 electrically connects the first portion 33b of the second electrode 33 to the second portion 33c. The metal plating layer 39 is formed by, for example, an electrolytic plating method.

According to the present embodiment, even if the second electrode 33 is separated into the first portion 33b and the second portion 33c due to the film forming state when the second electrode 33 is formed, the metal plating layer 39 is provided. By forming, the second portion 33c can function as a part of the second electrode 33. The configurations, manufacturing methods, and effects other than the above in the present embodiment are the same as those in the first embodiment.

<Fourth Embodiment>
Next, a fourth embodiment will be described.
FIG. 10 is a top view showing a light emitting element of the display device according to the present embodiment.

As shown in FIG. 10, in the display device according to this embodiment, a light emitting element 30c is provided. In the light emitting element 30c, the second electrode 33 is provided on the three side surfaces 31b of the semiconductor member 31. Even in this case, the same effect as that of the first embodiment can be obtained.

<Fifth Embodiment>
Next, a fifth embodiment will be described.
FIG. 11 is a top view showing a light emitting element of the display device according to the present embodiment.

As shown in FIG. 11, in the display device according to the present embodiment, a light emitting element 30d is provided. In the light emitting device 30d, the second electrode 33 is provided on two side surfaces 31b of the semiconductor member 31 that intersect each other. Even in this case, the same effect as that of the first embodiment can be obtained.

The present invention can be used, for example, in a device for visually displaying information, and can be used in, for example, a portable electronic device, a television receiver, a display for a large number of people, and the like.

1: Display device 10: Pixel 11, 11B, 11G, 11R: Subpixel 20: Substrate 20a: Top surface 21: First wiring 22: Electrode 23: Resin member 23a: Top surface 23b: Side surface 24: Second wiring 24a: First Straight portion 24b: Second straight portion 24c: Disconnected portion 30, 30a, 30b, 30c, 30d, 30x: Light emitting element 31: Semiconductor member 31a: Bottom surface 31b: Side surface 31c: Top surface 31n: Second semiconductor layer 31t: Light emitting layer 31p : First semiconductor layer 32: Light reflecting layer 32a, 32b: Opening 33: Second electrode 33a: Opening 33b: First part 33c: Second part 34: Insulating layer 34a: Opening 35: First electrode 36: Protective layer 37: First conductive layer 38: Second conductive layer 39: Metal plating layer 100: Support substrate 100a: Bottom surface 101: Adhesive sheet 102: Conductive paste layer

Claims (16)

A substrate in which sub-pixels are set, a first wiring is provided for each sub-pixel and electrodes are provided between the sub-pixels , and a second electrode is provided on the lower surface and a second surface is provided on at least two side surfaces intersecting with each other. The process of preparing a light emitting element provided with electrodes and
A step of mounting the light emitting element on the substrate and electrically connecting the first electrode to the first wiring.
A step of forming the light emitting element and a resin member covering the electrodes on the substrate,
By removing the upper part of the resin member, a part of the second electrode is exposed from the upper surface of the resin member, and by removing a part of the resin member, a part of the electrode is exposed to the resin member. And the process of exposing below the top surface of
A step of forming a mesh-like second wiring on the resin member so that a part of the wiring is arranged on the light emitting element, and electrically connecting the second wiring to the second electrode and the electrode .
A method of manufacturing a display device equipped with. The method for manufacturing a display device according to claim 1, wherein the light emitting element includes a semiconductor member, and the second electrode is provided around the semiconductor member when viewed from above. The method for manufacturing a display device according to claim 1, wherein the light emitting element includes a semiconductor member, and the second electrode is also provided on a part of the upper surface of the semiconductor member. The method for manufacturing a display device according to any one of claims 1 to 3, wherein the shape of the light emitting element is rectangular when viewed from above. The second wiring is
The first straight line part extending in the first direction and
A second straight line portion extending in a second direction intersecting the first direction and connected to the first straight line portion,
The method for manufacturing a display device according to any one of claims 1 to 4. The method for manufacturing a display device according to any one of claims 1 to 5, wherein two or more of the light emitting elements are mounted on at least one of the sub-pixels. The method for manufacturing a display device according to claim 6, further comprising a step of separating one defective light emitting element from the second wiring. In the step of forming the resin member, the resin member covers a plurality of the light emitting elements mounted on the plurality of the subpixels.
The method for manufacturing a display device according to any one of claims 1 to 7, wherein in the step of exposing, the resin member is partitioned for each sub-pixel. The method for manufacturing a display device according to any one of claims 1 to 8, wherein the size of the mesh of the second wiring is about the same as the size of the light emitting element. The invention according to any one of claims 1 to 9, further comprising a step of applying a roughening treatment to the surface of the electrode after the step of electrically connecting the second wiring to the second electrode and the electrode. How to manufacture the display device. A board with sub-pixels set and
The first wiring provided for each subpixel on the substrate,
A light emitting element mounted on the substrate for each subpixel,
A resin member provided for each subpixel and covering the lower portion of the light emitting element and the first wiring, and
A mesh-like second wiring provided on the resin member and partially arranged on the light emitting element,
An electrode provided between the sub-pixels on the substrate and arranged below the upper surface of the resin member, and
Equipped with
The light emitting element is
With semiconductor members
A first electrode provided on the lower surface of the semiconductor member and electrically connected to the first wiring,
A second electrode provided on at least two mutually intersecting surfaces of the semiconductor member and partially exposed from the upper surface of the resin member,
Have and
The second wiring is a display device electrically connected to a portion of the second electrode exposed on the resin member and the electrode . The light emitting device further has an insulating light reflecting layer provided between the side surface of the semiconductor member and the second electrode.
When viewed from above, the second electrode is provided around the semiconductor member.
The display device according to claim 11 , wherein the second electrode is electrically connected to the lower surface of the semiconductor member. The display device according to claim 11 or 12 , wherein at least one of the sub-pixels is provided with two or more of the light emitting elements. 13. The display device according to claim 13 , wherein the one light emitting element having a defect is separated from the second wiring. The display device according to any one of claims 11 to 14, wherein the size of the mesh of the second wiring is about the same as the size of the light emitting element. The display device according to any one of claims 11 to 15, wherein the reflectance of the surface of the electrode to the light from the light emitting element is lower than the reflectance of the surface of the first wiring to the light from the light emitting element. ..

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