JP7029254B2 - Directional coupler - Google Patents

Description

The present invention relates to a directional coupler, for example, a directional coupler having a main line and a sub line.

Directional couplers are used in mobile communication devices. It is known that a directional coupler is formed by using a laminate in which dielectric layers are laminated (for example, Patent Documents 1 to 4).

Japanese Unexamined Patent Publication No. 2015-12323 JP-A-2015-109630 U.S. Pat. No. 5,689,217 U.S. Patent Application Publication No. 2005/0146394

The directional coupler is required to have a flatness over a wide band.

The present invention has been made in view of the above problems, and an object of the present invention is to improve the flatness of the degree of coupling.

The present invention is electrically connected between an input terminal, an output terminal, a coupling terminal, an isolation terminal, the input terminal and the output terminal, and is electrically connected to a first line, the first line and the input. A main line including a second line connecting the terminals and a third line connecting the first line and the output terminal is electrically connected between the coupling terminal and the isolation terminal. , A fourth line that is electromagnetically coupled to the first line, a fifth line that is electromagnetically coupled to the second line and connects the fourth line and the coupling terminal, and an electromagnetically coupled to the third line. The shortest distance between the sub-line including the sixth line connecting the fourth line and the isolation terminal, the first line, and the fourth line is the shortest with the second line. A ground conductor smaller than a distance, a shortest distance to the third line, a shortest distance to the fifth line, and a shortest distance to the sixth line, and a plurality of laminated dielectric layers are provided, and the first line is provided. The line and the fourth line are first conductor patterns formed on the same surface of the first dielectric layer among the plurality of dielectric layers, and the second line, the third line, and the fifth line. And the sixth line is a conductor pattern formed on the surface of one or more dielectric layers, respectively, and is at least a part of the second line , at least a part of the third line, and the fifth line . At least a part and at least a part of the sixth line are directions in which the second conductor pattern formed on the same surface of the second dielectric layer different from the first dielectric layer among the plurality of dielectric layers. It is a sex combiner.

The present invention is electrically connected between an input terminal, an output terminal, a coupling terminal, an isolation terminal, the input terminal and the output terminal, and is electrically connected to a first line, the first line and the input. A main line including a second line connecting the terminals and a third line connecting the first line and the output terminal is electrically connected between the coupling terminal and the isolation terminal. , A fourth line that is electromagnetically coupled to the first line, a fifth line that is electromagnetically coupled to the second line and connects the fourth line and the coupling terminal, and an electromagnetically coupled to the third line. The shortest distance between the sub-line including the sixth line connecting the fourth line and the isolation terminal, the first line, and the fourth line is the shortest with the second line. A ground conductor that is smaller than the distance, the shortest distance to the third line, the shortest distance to the fifth line, and the shortest distance to the sixth line, and at least a part of the first line and the fourth line. Is a directional coupler thicker than the second line, the third line, the fifth line and the sixth line.

In the above configuration, a plurality of dielectric layers may be provided, and the main line and the sub line may be configured to have a conductor pattern formed on the surface of at least one of the plurality of dielectric layers. can.

In the present invention, an input terminal, an output terminal, a coupling terminal, an isolation terminal, and an input terminal and an output terminal are electrically connected to each other, and the first line, the first line, and the input are electrically connected. A main line including a second line connecting the terminals and a third line connecting the first line and the output terminal is electrically connected between the coupling terminal and the isolation terminal. , A fourth line that is electromagnetically coupled to the first line, a fifth line that is electromagnetically coupled to the second line and connects the fourth line and the coupling terminal, and an electromagnetically coupled to the third line. The shortest distance between the sub-line including the sixth line connecting the fourth line and the isolation terminal, the first line, and the fourth line is the shortest with the second line. A ground conductor smaller than a distance, a shortest distance to the third line, a shortest distance to the fifth line, and a shortest distance to the sixth line, and a plurality of laminated dielectric layers are provided. The line and the fourth line are first conductor patterns formed on the surface of the first dielectric layer among the plurality of dielectric layers, and the second line, the third line, the fifth line, and the above. The sixth line is a second conductor pattern formed on the surface of the second dielectric layer different from the first dielectric layer among the plurality of dielectric layers, and the ground conductor is the plurality of dielectric layers. Of these, it is a directional coupler which is a third conductor pattern formed on the surface of the third dielectric layer located between the first dielectric layer and the second dielectric layer.

In the above configuration, the first line and the fourth line overlap with the ground conductor in a plan view, and the second line, the third line, the fifth line and the sixth line are the third conductive lines in a plan view. The configuration can be such that it does not overlap with the body pattern.

The present invention is electrically connected between an input terminal, an output terminal, a coupling terminal, an isolation terminal, the input terminal and the output terminal, and is electrically connected to a first line, the first line and the input. A main line including a second line connecting the terminals and a third line connecting the first line and the output terminal is electrically connected between the coupling terminal and the isolation terminal. , A fourth line that is electromagnetically coupled to the first line, a fifth line that is electromagnetically coupled to the second line and connects the fourth line and the coupling terminal, and an electromagnetically coupled to the third line. The shortest distance between the sub-line including the sixth line connecting the fourth line and the isolation terminal, the first line, and the fourth line is the shortest with the second line. A ground conductor smaller than the distance, the shortest distance to the third line, the shortest distance to the fifth line, and the shortest distance to the sixth line is provided, and is parallel between the input terminal and the first line. A plurality of the second lines are connected to the above-mentioned, and a plurality of the fifth lines to be electromagnetically coupled to the plurality of second lines are connected in series between the coupling terminal and the fourth line. A plurality of the third lines are connected in parallel between the first line and the output terminal, and electromagnetically coupled to the plurality of third lines in series between the fourth line and the isolation terminal. It is a directional coupler to which a plurality of the sixth lines to be connected are connected.

In the above configuration, the second line, the third line, the fifth line, and the sixth line can each include a line wound in a plan view.

The present invention is provided on the surface of the first dielectric layer, the first main line pattern provided on the surface of the first dielectric layer, and the surface of the first dielectric layer, and at least a part thereof is the first main. A first sub-line pattern provided along at least a part of the line pattern, a second dielectric layer overlapping the first dielectric layer, and the first main line provided on the surface of the second dielectric layer. A third dielectric layer provided with the second dielectric layer interposed therebetween, a ground pattern overlapping the pattern and the first sub-line pattern, and the third dielectric layer. A second main line pattern provided on the surface and connected to one end of the first main line pattern, and at least one provided on the surface of the third dielectric layer and connected to one end of the first sub line pattern. A portion is provided on the surface of the second auxiliary line pattern provided along at least a part of the second main line pattern and the surface of the third dielectric layer, and is connected to the other end of the first main line pattern. A third main line pattern, provided on the surface of the third dielectric layer, connected to the other end of the first sub-line pattern, and at least partly provided along at least part of the third main line pattern. It is a directional coupler comprising the third sub-line pattern.

In the above configuration, the shortest distance between the first main line pattern and the ground pattern and the shortest distance between the first sub line pattern and the ground pattern are the shortest distance between the second main line pattern and the ground pattern. The configuration shall be smaller than the shortest distance between the second sub line pattern and the ground pattern, the shortest distance between the third main line pattern and the ground pattern, and the shortest distance between the third sub line pattern and the ground pattern. Can be done.

According to the present invention, the flatness of the degree of coupling can be improved.

FIG. 1 is a circuit diagram of a directional coupler according to the first embodiment. FIG. 2 is a circuit diagram of the directional coupler according to the second embodiment. 3 (a) to 3 (c) are a top view, a bottom view and a side view of the directional coupler according to the second embodiment. FIG. 4 is a disassembled perspective view (No. 1) of the directional coupler in Example 2. FIG. 5 is a disassembled perspective view (No. 2) of the directional coupler in Example 2. 6 (a) to 6 (d) are plan views (No. 1) of each dielectric layer in the second embodiment. 7 (a) to 7 (d) are plan views (No. 2) of each dielectric layer in the second embodiment. 8 (a) to 8 (d) are plan views (No. 3) of each dielectric layer in the second embodiment. 9 (a) to 9 (e) are plan views (No. 4) of each dielectric layer in the second embodiment. FIG. 10 is a side view of sample A. FIG. 11 is a side view of sample B. FIG. 12 is a side view of sample D. 13 (a) is a diagram showing the phase with respect to the frequency in the sample A, and FIG. 13 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. 14 (a) is a diagram showing the phase with respect to the frequency in the sample B, and FIG. 14 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. FIG. 15 (a) is a diagram showing the phase with respect to the frequency in the sample C, and FIG. 15 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. 16 (a) is a diagram showing the phase with respect to the frequency in the sample D, and FIG. 16 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. FIG. 17A is a diagram showing the phase with respect to the frequency in the sample E, and FIG. 17B is a diagram showing the degree of coupling and isolation with respect to the frequency. FIG. 18 is a circuit diagram of a directional coupler in simulation 2. FIG. 19 is a diagram showing the difference in the degree of coupling with respect to the phase difference in the simulation 2. FIG. 20 is a diagram showing isolation with respect to frequency in simulation 3.

Hereinafter, examples of the present invention will be described with reference to the drawings.

FIG. 1 is a circuit diagram of a directional coupler according to the first embodiment. As shown in FIG. 1, the main line Lm is connected in series between the input terminal Tin and the output terminal Tout. The main line Lm has a line L1 in the central portion, a line L2 that electrically connects the input terminal Tin and the line L1, and a line L3 that electrically connects the line L1 and the output terminal Tout. There is. A sub-line Ls is connected between the coupling terminal Tc and the isolation terminal Tiso. The sub-line Ls has a central line L4, a line L5 that electrically connects the coupling terminal Tc and the line L4, and a line L6 that electrically connects the line L4 and the isolation terminal Tiso. ing. The lines L1 to L3 and the lines L4 to L6 are electromagnetically coupled to each other.

Most of the high frequency signal Sin input from the input terminal Tin is output as a high frequency signal Sout from the output terminal Tout. The high frequency signal propagating on the main line Lm is coupled with the sub line Ls. As a result, a part of the high frequency signal Sin is output from the coupling terminal Tc as a high frequency signal Sc. Further, a part of the high frequency signal Sout is output as a high frequency signal Siso from the isolation terminal Tiso. The degree of coupling (coupling) is the power of the signal Sc with respect to the power of the signal Sin. Isolation is the power of the signal Siso with respect to the power of the signal Sin.

The directional coupler is used, for example, in a transmission circuit of a mobile communication device. The directional coupler is used to take out a part of the transmission signal amplified by an amplifier such as a power amplifier and feed it back to the power amplifier. As a result, the power amplifier is controlled in real time.

Directional couplers are required to flatten the degree of coupling with respect to frequency. For example, in GSM® (Global System for Mobile communications) 800/900, the transmission band is from 824 MHz to 915 MHz. For example, the degree of coupling is required to be 20 dB ± 2 dB in this transmission band. In this example, since the frequency band is 91 MHz, it is relatively easy to flatten the degree of coupling.

However, in recent years, many bands have been used in mobile communication devices. Therefore, the band in which the directional coupler is used has been widened, for example, from 698 MHz to 2690 MHz. As the frequency increases, the electromagnetic field coupling becomes stronger and the coupling degree increases. In one example, the coupling degree is 30 dB at 698 MHz and the coupling degree is 17 dB at 2700 MHz.

As described above, the frequency dependence of the degree of coupling is required to be small. That is, the degree of coupling is preferably flat with respect to frequency. The isolation terminal Tiso is terminated by a terminating resistor. The signal Siso is consumed by the terminating resistor. Therefore, it is preferable that the isolation is large.

In the first embodiment, the characteristic impedance of the lines L1 and L4 is made lower than the characteristic impedance of the lines L2, L3, L5 and L6. As a result, the degree of coupling between the lines L1 and L4 is smaller than the degree of coupling between the lines L2 and L5 and the degree of coupling between the lines L3 and L6. As a result, it is considered that the phase difference between the main line Lm and the sub line Ls becomes large. Therefore, the frequency dependence of the degree of coupling is reduced and the isolation is improved.

Example 2 is a specific example of Example 1. FIG. 2 is a circuit diagram of the directional coupler according to the second embodiment. As shown in FIG. 2, the lines L2a and L2b are connected in parallel between the input terminal Tin and the line L1. The lines L3a and L3b are connected in parallel between the line L1 and the output terminal Tout. The lines L5a and L5b are connected in series between the coupling terminal Tc and the line L4. The lines L6a and L6b are connected in series between the line L4 and the isolation terminal Tiso. The lines L2a, L2b, L3a and L3b are electromagnetically coupled to the lines L5a, L5b, L6a and L6b, respectively.

The high frequency signal mainly propagates on the main line Lm. Therefore, the lines L2a and L2b are connected in parallel, and the lines L3a and L3b are connected in parallel. As a result, the conductor loss of the main line Lm is reduced and the insertion loss of the main line Lm is reduced. The loss of the secondary line Ls does not significantly affect the characteristics of the directional coupler. Therefore, the lines L5a and L5b are connected in series, and the lines L6a and L6b are connected in series. This makes it possible to increase the degree of coupling.

A line Lin is connected between the main line Lm of the input terminal Tin, and a line Lout is connected between the main line Lm and the output terminal Tout. The line Lc is connected to the sub line Ls of the coupling terminal Tc, and the line Liso is connected to the sub line Ls and the isolation terminal Tiso. The lines Lin, Lout, Lc and Liso are drawer patterns. The capacitor C1 is connected between the node between the line L4 and L5b and the ground, and the capacitor C2 is connected between the node and the ground between the line L4 and the line L6a. Capacitors C1 and C2 are for (fine) adjustment of the impedance of the line L4. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

3 (a) to 3 (c) are a top view, a bottom view and a side view of the directional coupler according to the second embodiment. FIG. 3B is a bottom view of the lower surface of the directional coupler as seen through from above. The stacking direction of the laminated body 10 is the Z direction, the longitudinal direction of the laminated body 10 in the plane direction is the X direction, and the lateral direction is the Y direction.

As shown in FIGS. 3 (a) to 3 (c), the directional coupler has the laminated body 10. A direction identification mark 22 is provided on the upper surface of the laminated body 10. The terminal electrode 20 is provided on the lower surface of the laminated body 10. The terminal electrode 20 corresponds to an input terminal Tin, an output terminal Tout, a coupling terminal Tc, an isolation terminal Tiso, and a ground terminal Tgnd. The length L of the laminate 10 in the X direction is, for example, 1 mm, the width W in the Y direction is, for example, 0.5 mm, and the thickness T in the Z direction is, for example, 0.45 mm.

4 and 5 are disassembled perspective views of the directional coupler in Example 2. 6 (a) to 9 (e) are plan views of each dielectric layer in the second embodiment. 6 (a), 6 (c), 7 (a), 7 (c), 8 (a), 8 (c), 9 (a) and 9 (c), respectively. It is a figure which shows the conductor pattern 12 on the upper surface of the dielectric layer 11b to 11i. 6 (b), 6 (d), 7 (b), 7 (d), 8 (b), 8 (d), 9 (b) and 9 (d), respectively. It is a figure which shows the via wiring 13 which penetrates from a dielectric layer 11b to 11i. FIG. 9E is a diagram showing the terminal electrode 20 on the lower surface of the dielectric layer 11i, and is a perspective view of the lower surface of the dielectric layer 11i from above.

As shown in FIGS. 4 to 9 (e), a plurality of dielectric layers 11a to 11i are laminated. A conductor pattern 12 is formed on the upper surfaces of the dielectric layers 11b to 11i. A terminal electrode 20 is formed on the lower surface of the dielectric layer 11i. Via wiring 13 penetrating the dielectric layers 11b to 11i is formed in the dielectric layers 11b to 11i. The via wiring 13 electrically connects the upper and lower conductor patterns 12. The dielectric layers 11a to 11i are ceramic materials containing oxides such as Al, Si and / or Ca. The dielectric layers 11a to 11i may be made of a resin material or a glass material. The conductor pattern 12 and the via wiring 13 are metal layers such as, for example, Ag, Pd, Pt, Cu, Ni, Au, Au—Pd alloy or Ag—Pt alloy.

As shown in FIG. 4, a direction identification mark 22 is formed on the upper surface of the dielectric layer 11a. As shown in FIGS. 4 and 6 (a), the conductor pattern 12 of the dielectric layer 11b forms the lines L1 and L4. The lines L1 and L4 extend in the X direction and are provided substantially in parallel. The line L1 is substantially linear. The central portion of the line L4 is provided so as to be shifted in the + Y direction with respect to both ends of the line L4. As shown in FIG. 6A, in the region where the line L1 and the central portion of the line L4 face each other, the widths of the lines L1 and L4 are W1 and W4, the distance between the lines L1 and L4 is S14, and the lines L1 and L4. Let the length of L4 be L14.

As shown in FIGS. 4 and 6 (c), the conductor pattern 12 on the upper surface of the dielectric layer 11c forms the ground electrode G1. In a plan view, a part of the line L1 and a part of the line L4 (a region including a region shifted in the + Y direction) overlap with the ground electrode G1. The line L1 and the ground electrode G1 and the line L4 and the ground electrode G1 form a microstrip line. If there are no restrictions on the height, the lines L1 and L4 may be strip line signal lines.

As shown in FIGS. 4 and 7 (a), the conductor pattern 12 on the upper surface of the dielectric layer 11d forms the capacitor electrode 14. The capacitor electrode 14 facing the dielectric layer 11c and the ground electrode G1 form capacitors C1 and C2.

As shown in FIGS. 4 and 7 (c), the conductor pattern 12 on the upper surface of the dielectric layer 11e forms the lines L2b, L3b, L5b and L6b. The lines L2b, L3b, L5b and L6b have a U-shape or a C-shape. Further, the lines L2b, L3b, L5b and L6b may have a meander type shape. In order not to lower the impedance, the lines L2b, L3b, L5b and L6b do not overlap with the ground electrode G1 in a plan view.

As shown in FIGS. 5 and 8 (a), the conductor pattern 12 on the upper surface of the dielectric layer 11f forms the lines L2a, L3a, L5a and L6a. The lines L2a, L3a, L5a and L6a have a U-shape or a C-shape. In plan view, the lines L2a, L3a, L5a and L6a do not overlap with the ground electrode G1. In plan view, the lines L2a, L3a, L5a and L6a overlap with at least a part of the lines L2b, L3b, L5b and L6b, respectively. The lines L5a and L5b have the same winding direction, and the lines L6a and L6b have the same winding direction.

As shown in FIGS. 7 (c) and 8 (a), the widths of the lines L2a and L2b, L3a and L3b, the lines L5a and L5b, and the lines L6a and L6b are W2, W3, W5 and W6, respectively. Let S25 be the distance between the lines L2a and L5a and the distance between the lines L2b and L5b. Let S36 be the distance between the lines L3a and L6a and the distance between the lines L3b and L6b.

As shown in FIGS. 5 and 8 (c), the conductor pattern 12 on the upper surface of the dielectric layer 11 g forms the lines Lc and Liso. As shown in FIGS. 5 and 9A, the conductor pattern 12 on the upper surface of the dielectric layer 11h forms the ground electrode G2. As shown in FIGS. 5 and 9 (c), the conductor pattern 12 on the upper surface of the dielectric layer 11i forms the lines Lin and Lout and the ground electrode G3. As shown in FIGS. 5 and 9 (e), a terminal electrode 20 is formed on the lower surface of the dielectric layer 11i. As shown in FIGS. 6 (b), 6 (d), 7 (b), 7 (d), 8 (b), 8 (d), 9 (b) and 9 (d). In addition, via wiring 13 is formed in the dielectric layers 11b to 11i.

As shown in FIGS. 4 and 5, the thickness of the dielectric layer 11b between the lines L1 and L4 and the ground electrode G1 is T1, and the thickness of the dielectric layer between the ground electrode G1 and the lines L2b, L3b, L5b and L6b. The total thickness of the layers 11c and 11d is T2, and the thickness of the dielectric layer 11e between the lines L2b, L3b, L5b and L6b and the lines L2a, L3a, L5a and L6a is T3. Further, the thickness of the lines L1 and L4 is T4, and the thickness of the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b is T5.

[Simulation 1]
The simulation was performed by changing the thicknesses T1 to T5. The simulation is a circuit simulation using the Advanced Design System (ADS) available from Keysight Technologies, Inc.

The simulation conditions are as follows.
Relative permittivity of dielectric layers 11a to 11i: 10
Line L1 width W1: 25 μm
Line L4 width W4: 20 μm
Distance between lines L1 and L4 S14: 230 μm
Length L14: 785 μm where lines L1 and L4 face each other
Width W2 of lines L2a and L2b: 25 μm
Width W3 of lines L3a and L3b: 25 μm
Width W5 of lines L5a and L5b: 25 μm
Width W6 of lines L6a and L6b: 25 μm
Distance between lines L2a and L5a S25: 25 μm
Distance between lines L3a and L6a S36: 25 μm

Table 1 shows the thicknesses T1 to T5 of the samples A to E having different thicknesses T1 to T5.

10 to 12 are side views of the samples A, B, and D, respectively, showing the conductor pattern 12 and the via wiring 13 passing through the dielectric layer.

As shown in FIGS. 10 and 1, in sample A, the thickness T1 of the dielectric layer 11b between the lines L1 and L4 and the ground electrode G1 and the ground electrode G1 and the lines L2b, L3b, L5b and L6b The total thickness T2 of the dielectric layers 11c and 11d between them is 200 μm, which is the same. The thickness T4 of the lines L1 and L4 and the thickness T5 of the ground electrode G1 are 8 μm, which are the same.

As shown in FIG. 11 and Table 1, in sample B, the thickness T1 is 15 μm, the thickness T2 is 200 μm, and the thickness T1 is smaller than T2. The thickness T4 and the thickness T5 are 8 μm and are the same.

As shown in Table 1, in sample C, the thickness T1 is 200 μm, the thickness T2 is 15 μm, and the thickness T1 is larger than T2. The thickness T4 and the thickness T5 are 8 μm and are the same.

As shown in FIG. 12 and Table 1, in sample D, the thickness T1 is 15 μm, the thickness T2 is 200 μm, and the thickness T1 is smaller than T2. The thickness T4 is 15 μm, the thickness T5 is 8 μm, and the thickness T4 is larger than T5.

As shown in Table 1, in sample E, the thickness T1 is 15 μm, the thickness T2 is 200 μm, and the thickness T1 is smaller than T2. The thickness T4 is 8 μm, the thickness T5 is 15 μm, and the thickness T4 is smaller than T5.

13 (a) is a diagram showing the phase with respect to the frequency in the sample A, and FIG. 13 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. In FIG. 13A, the solid line shows the phase of the output terminal Tout with respect to the input terminal Tin in the main line Lm, and the broken line shows the phase of the output terminal Tout with respect to the input terminal Tin in the sub line Ls. The dotted line indicates the phase difference Lm-Ls between the main line Lm and the sub line Ls. In FIG. 13B, the solid line indicates the degree of coupling, and the broken line indicates the isolation.

Table 2 is a table showing the phase difference, the difference in the degree of coupling, and the minimum isolation between the samples A to E.

The phase difference is the phase difference Lm-Ls between the main line Lm and the sub line Ls of 5.85 GHz (triangular marker in FIG. 13A). The difference in the degree of coupling is the difference in the degree of coupling between 3.4 GHz (downward triangle in FIG. 13 (b)) and 6 GHz (upward triangle in FIG. 13 (b)). The minimum isolation is the minimum (small absolute value) isolation in the range of 3.4 GHz to 6 GHz. In sample A, the phase difference is 6.6 °, the difference in coupling degree is 3.85 dB, and the minimum isolation is −31 dB.

14 (a) is a diagram showing the phase with respect to the frequency in the sample B, and FIG. 14 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. As shown in FIG. 14A, in sample B, the phase of the main line Lm has an absolute value smaller than the phase of the main line Lm in sample A in FIG. 13A. As a result, the phase difference of sample B becomes larger than that of sample A. As shown in Table 2, the phase difference of sample B is 7.28 °.

As shown in FIG. 14 (b), the isolation of sample B is larger than that of sample A in FIG. 13 (b). As shown in Table 2, the difference in the degree of binding of sample B is 3.51 dB, which is smaller than that of sample A. The minimum isolation of sample B is -43 dB, which is larger than that of sample A.

When the thickness T1 is smaller than T2 as in sample B, the phase difference becomes large. The difference in coupling is small and the isolation is large. In this way, the difference in coupling degree and isolation are improved.

FIG. 15 (a) is a diagram showing the phase with respect to the frequency in the sample C, and FIG. 15 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. As shown in FIG. 15A, in sample C, the phase of the main line Lm has an absolute value larger than the phase of the main line Lm in sample A in FIG. 13A. As a result, the phase difference of sample C becomes smaller than that of sample A. As shown in Table 2, the phase difference of the sample C is 2.79 °.

As shown in FIG. 15 (b), the isolation of sample C is smaller than that of sample A in FIG. 13 (b). As shown in Table 2, the difference in the degree of binding of sample C is 3.98 dB, which is larger than that of sample A. The minimum isolation of sample C is −33 dB, which is similar to that of sample A.

When the thickness T2 is smaller than T1 as in sample C, the phase difference becomes smaller. The difference in the degree of coupling is large, and the isolation is about the same. In this way, the difference in the degree of coupling is exacerbated.

16 (a) is a diagram showing the phase with respect to the frequency in the sample D, and FIG. 16 (b) is a diagram showing the degree of coupling and isolation with respect to the frequency. As shown in FIG. 16A, the phase difference in sample D is larger than that in sample B. As shown in Table 2, the phase difference of the sample D is 7.34 °.

As shown in FIG. 16 (b), the isolation of sample D is similar to the isolation of sample B in FIG. 14 (b). As shown in Table 2, the difference in the degree of coupling of sample D is 3.38 dB, which is smaller than that of sample B. The minimum isolation of sample D is −43 dB, which is similar to that of sample B.

When the thickness T4 is made larger than T5 as in the sample D, the phase difference becomes large. The difference in the degree of coupling becomes small. In this way, the difference in the degree of coupling is improved.

FIG. 17A is a diagram showing the phase with respect to the frequency in the sample E, and FIG. 17B is a diagram showing the degree of coupling and isolation with respect to the frequency. As shown in FIG. 17A, the phase difference in sample E is smaller than that in sample B. As shown in Table 2, the phase difference of sample E is 6.70 °.

As shown in FIG. 17 (b), the isolation of sample E is smaller than that of sample B in FIG. 14 (b). As shown in Table 2, the difference in the degree of binding of sample E is 3.64 dB, which is larger than that of sample B. The minimum isolation of sample E is -40 dB, which is smaller than sample B.

When the thickness T5 is larger than T4 as in sample E, the phase difference becomes smaller. The difference in the degree of coupling becomes large, and the isolation becomes small. In this way, the difference in the degree of coupling and the isolation are deteriorated.

In simulation 1, it was found that when the thickness T1 is smaller than T2, the phase difference becomes large, and the difference in the degree of coupling and the isolation are improved. It was also found that when the thickness T4 is larger than T5, the phase difference becomes large, and the difference in the degree of coupling and the isolation are improved.

[Simulation 2]
Simulation 2 was performed to investigate that the phase difference affects the difference in the degree of coupling. FIG. 18 is a circuit diagram of a directional coupler in simulation 2. As shown in FIG. 18, main lines Lm and Ls are provided. The line La is connected between the sub line Ls and the coupling terminal Tc. A line Lb is connected between the sub line Ls and the isolation terminal Tiso.

The electrical lengths of the lines La and Lb were changed, and the phase difference between the main line Lm and the sub line Ls was changed. Each line is a maricross trip line with a dielectric layer sandwiched between them and the ground electrodes facing each other.
Line L1 width: 25 μm
Line L4 width: 25 μm
Distance between lines L1 and L4: 50 μm
Length of lines L1 and L4 facing each other: 785 μm
Relative permittivity of the dielectric layer: 10
Distance between line and ground electrode: 200 μm

FIG. 19 is a diagram showing the difference in the degree of coupling with respect to the phase difference in the simulation 2. The phase difference is the phase difference between the main line Lm and the sub line Ls. The difference in the degree of coupling is the difference in the degree of coupling between 3.4 GHz and 6 GHz. As shown in FIG. 19, as the phase difference increases, the difference in coupling degree decreases. When the phase difference is about 70 °, the difference in coupling degree is minimized. It is considered that this is because the electromagnetic field coupling between the main line Lm and the sub line Ls weakens as the phase difference increases.

According to simulation 2, even in a simple directional coupler, the difference in coupling degree becomes smaller as the phase difference becomes larger. As a result, in Simulation 1, it is considered that the reason why the difference in the degree of coupling between the samples B to E is smaller than that of the sample A is that the phase difference is large.

[Simulation 3]
In simulation 1, the isolation of sample D having a thickness T4 larger than that of T5 was similar to that of sample B. Therefore, an electromagnetic field simulation was performed on the samples B, D, and E based on the three-dimensional structure.

FIG. 20 is a diagram showing isolation with respect to frequency in simulation 3. As shown in FIG. 20, the isolation of the sample D is larger than that of the sample B, and the isolation of the sample E is smaller.

Table 3 is a table showing the difference in the degree of coupling and the minimum isolation in the simulation 3.

As shown in Table 3, the sample D having a thickness T4 larger than T5 has a smaller difference in the degree of coupling and a larger isolation than the sample B. Sample E having a thickness T4 smaller than T5 has a larger difference in degree of coupling and smaller isolation than sample B.

When the thickness T1 is smaller than T2 as in simulation 1, the difference in the degree of coupling becomes small and the isolation becomes large. When the thickness T4 is made larger than T5 as in simulations 1 and 3, the difference in the degree of coupling becomes small and the isolation becomes large.

The reason for this is not clear, but it is thought that the characteristic impedance of the transmission line is related. The characteristic impedance decreases as the capacitance component increases, and decreases as the inductance component decreases. When the thickness T1 is reduced, the capacitive component becomes large and the characteristic impedance becomes low. When the thickness T4 is increased, the inductance component becomes smaller and the characteristic impedance becomes lower.

When the characteristic impedance of the lines L1 and L4 in the central portion becomes low as in Simulation 1, the degree of coupling between the lines L1 and L4 is the total degree of coupling between the lines L2a and L5a and the lines L2b and L5b, and the lines L3a and L6a. And it is smaller than the total degree of coupling between the lines L3b and L6b. As a result, as in simulation 2, where the phase difference between the main line Lm and the sub line Ls is considered to be large, it is considered that the difference in the degree of coupling becomes small when the phase difference becomes large. As a result, as in Simulations 1 and 3, in Example 2, it is considered that the difference in the degree of coupling is small and the isolation is large.

According to Samples B to E of the second embodiment, the main line Lm includes the line L1 (first line), the lines L2a and L2b (second line) connecting the line L1 and the input terminal Tin, and the line L1. Includes lines L3a and L3b (third line) connecting to the output terminal Tout. The auxiliary lines Ls are lines L5a and L5b (fifth line) connecting the line L4 (fourth line), the line L4 and the coupling terminal Tc, and lines L6a and L6b connecting the line L4 and the isolation terminal Tiso. (6th line) and. The lines L1 and L4 are electromagnetically coupled, the lines L2a and L2b and the lines L5a and L5b are electromagnetically coupled, and the lines L3a and L3b and the lines L6a and L6b are electromagnetically coupled.

In such a structure, the shortest distance between the lines L1 and L4 and the ground electrode G1 (ground conductor) (thickness T1 in Example 1) is set to the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and Make it smaller than the shortest distance (thickness T2) of each of L6b and the ground electrode G1. As a result, the characteristic impedances of the lines L1 and L4 become low, the flatness of the degree of coupling becomes small, and the isolation becomes large.

The thickness T1 is preferably ½ or less of T3, more preferably 1/5 or less, still more preferably 1/10 or less.

Like sample D, at least a portion of the lines L1 and L4 is thicker than the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b. As a result, the flatness of the degree of coupling becomes small and the isolation becomes large.

The thickness T4 is preferably 1.2 times or more, more preferably 1.5 times or more the thickness T5.

From the viewpoint of lowering the characteristic impedance of the lines L1 and L4, the width of the lines L1 and L4 may be larger than the width of the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b.

The main line Lm and the sub line Ls are conductor patterns 12 formed on the surface of at least one of the plurality of dielectric layers 11a to 11i. By forming the main line Lm and the sub line Ls in the laminated body 10 in this way, the directional coupler can be miniaturized.

As shown in FIGS. 4 and 6A, the lines L1 and L4 are conductor patterns 12 (second conductor patterns) formed on the surface of the dielectric layer 11b. The lines L2b, L3b, L5b and L6b are conductor patterns 12 formed on the surface of the dielectric layer 11e (a dielectric layer different from the dielectric layer 11b). By forming the lines L1 and L4 in a dielectric layer different from the other lines in this way, the directional coupler can be miniaturized.

As shown in FIGS. 4, 6 (c) and 7 (c), the ground electrode G1 is formed on the surface of the dielectric layer 11c (third dielectric layer) located between the dielectric layers 11b and 11e. It is a conductor pattern 12 (third conductor pattern). In this way, if the thickness of the dielectric layer is set by providing the ground electrode G1 between the lines L1 and L4 and the lines L2b, L3b, L5b and L6b, the ground electrode G1 and the lines L1 and L4 can be set. The shortest distance can be made smaller than the shortest distance between the ground electrode G1 and the lines L2b, L3b, L5b and L6b.

As shown in FIGS. 4, 6 (a), 6 (c) and 7 (c), the lines L1 and L4 overlap with the ground electrode G1 in a plan view. On the other hand, the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b do not overlap with the ground electrode G1 in a plan view. Thereby, the characteristic impedance of the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b can be increased. Therefore, the flatness and isolation of the degree of coupling are further improved.

As shown in FIG. 2, a plurality of lines L2a and L2b are connected in parallel between the input terminal Tin and the line L1. The plurality of lines L3a and L3b are connected in parallel between the line L1 and the output terminal Tout. As a result, the insertion loss of the main line Lm can be reduced.

The plurality of lines L5a and L5b are connected in series between the coupling terminal Tc and the line L4, and are electromagnetically coupled to the plurality of lines L2a and L2b, respectively. The plurality of lines L6a and L6b are connected in series between the line L4 and the isolation terminal Tiso, and are electromagnetically coupled to the plurality of lines L3a and L3b, respectively. As a result, the degree of coupling can be increased.

The lines L2a and L2b, the lines L3a and L3b, the lines L5a and L5b, and the lines L6a and L6b each include a winding line in a plan view. As a result, the characteristic impedances of the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b are increased. Therefore, the flatness and isolation of the degree of coupling are further improved.

The line L1 (first main line pattern) and the line L4 (first sub line pattern) are provided on the surface of the dielectric layer 11b. At least a part of the line L4 is provided along at least a part of the line L1. The ground electrode G1 (ground pattern) is provided on the surface of the dielectric layer 11c and overlaps at least a part of the line L1 and at least a part of the line L4. The lines L2b, L3b, L5b and L6b are provided on the surface of the dielectric layer 11e. The line L2b is connected to one end of the line L1. The line L3b is connected to the other end of the line L1. The line L5b is connected to one end of the line L4. The line L6b is connected to the other end of the line L4. At least a part of the line L5b is provided along at least a part of the line L2b, and at least a part of the line L6b is provided along at least a part of the line L3b. This makes it possible to reduce the size of the directional coupler.

In the second embodiment, an example in which the second line, the third line, the fifth line, and the sixth line are provided on a plurality of dielectric layers has been described, but the second line, the third line, the fifth line, and the sixth line have been described. The 6 lines may be formed in a single dielectric layer. Although the example in which the first line and the fourth line are provided in a single dielectric layer has been described, the first line and the fourth line may be formed in a plurality of dielectric layers.

An example in which the ground electrode G1 is arranged between the first line and the fourth line and the second line, the third line, the fifth line, and the sixth line has been described. A first line and a sixth line may be provided between the third line, the fifth line, and the sixth line.

Although an example in which at least a part of the lines L1 and L4 overlaps with the ground electrode G1 in a plan view has been described, the lines L1 and L4 do not have to overlap with the ground electrode G1. An example has been described in which the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b do not overlap with the ground electrode G1 in a plan view, but the lines L2a, L2b, L3a, L3b, L5a, L5b, L6a and L6b At least a part of it may overlap with the ground electrode G1.

An example in which a plurality of lines L2a and L2b are connected in parallel and a plurality of lines L3a and L3b are connected in parallel has been described, but a plurality of lines L2a and L2b are connected in series and a plurality of lines L3a and L3b are connected in series. May be. An example in which a plurality of lines L5a and L5b are connected in series and a plurality of lines L6a and L6b are connected in series has been described, but a plurality of lines L5a and L5b are connected in parallel and the lines L6a and L6b are connected in parallel. May be good.

Although the thickness T1 is 15 μm, the thickness T2 is 200 μm, and the thicknesses T3 to T5 are 8 μm or 15 μm as an example, the thicknesses T1, T2, and T3 to T5 can be set as appropriate. For example, the thickness T1 can be appropriately set between 8 μm and 100 μm.

Although the examples of the present invention have been described in detail above, the present invention is not limited to such specific examples, and various modifications and variations are made within the scope of the gist of the present invention described in the claims. It can be changed.

10 Laminated body 11a-11i Dielectric layer 12 Conductor pattern 20 Terminal electrode

Claims (9)

Input terminal and
With the output terminal
With the coupling terminal,
Isolation terminal and
A second line that is electrically connected between the input terminal and the output terminal and connects the first line, the first line and the input terminal, and the first line and the output terminal are connected. The third line, including the main line,
A fourth line electrically connected between the coupling terminal and the isolation terminal and electromagnetically coupled to the first line, and electromagnetically coupled to the second line to bond the fourth line to the coupling terminal. A sub-line including a fifth line connecting the above and a sixth line that is electromagnetically coupled to the third line and connecting the fourth line and the isolation terminal.
The shortest distance to the first line and the shortest distance to the fourth line are the shortest distance to the second line, the shortest distance to the third line, the shortest distance to the fifth line, and the sixth line. With a ground conductor smaller than the shortest distance with,
With multiple laminated dielectric layers,
Equipped with
The first line and the fourth line are first conductor patterns formed on the same surface of the first dielectric layer among the plurality of dielectric layers.
The second line, the third line, the fifth line, and the sixth line are each a conductor pattern formed on the surface of one or a plurality of dielectric layers.
At least a part of the second line , at least a part of the third line , at least a part of the fifth line, and at least a part of the sixth line are the first dielectric of the plurality of dielectric layers. A directional coupler that is a second conductor pattern formed on the same surface of a second dielectric layer that is different from the layer. Input terminal and
With the output terminal
With the coupling terminal,
Isolation terminal and
A second line that is electrically connected between the input terminal and the output terminal and connects the first line, the first line and the input terminal, and the first line and the output terminal are connected. The third line, including the main line,
A fourth line electrically connected between the coupling terminal and the isolation terminal and electromagnetically coupled to the first line, and electromagnetically coupled to the second line to bond the fourth line to the coupling terminal. A sub-line including a fifth line connecting the above and a sixth line that is electromagnetically coupled to the third line and connecting the fourth line and the isolation terminal.
The shortest distance to the first line and the shortest distance to the fourth line are the shortest distance to the second line, the shortest distance to the third line, the shortest distance to the fifth line, and the sixth line. With a ground conductor smaller than the shortest distance with,
With multiple laminated dielectric layers,
Equipped with
The first line and the fourth line are first conductor patterns formed on the surface of the first dielectric layer among the plurality of dielectric layers.
The second line, the third line, the fifth line, and the sixth line are the second conductive layers formed on the surface of the second dielectric layer different from the first dielectric layer among the plurality of dielectric layers. It ’s a body pattern,
The ground conductor is a direction which is a third conductor pattern formed on the surface of the third dielectric layer located between the first dielectric layer and the second dielectric layer among the plurality of dielectric layers. Sexual binder. The first line and the fourth line overlap with the ground conductor in a plan view, and the first line and the fourth line overlap with the ground conductor.
The directional coupler according to claim 2, wherein the second line, the third line, the fifth line, and the sixth line do not overlap with the third conductor pattern in a plan view. Input terminal and
With the output terminal
With the coupling terminal,
Isolation terminal and
A second line that is electrically connected between the input terminal and the output terminal and connects the first line, the first line and the input terminal, and the first line and the output terminal are connected. The third line, including the main line,
A fourth line electrically connected between the coupling terminal and the isolation terminal and electromagnetically coupled to the first line, and electromagnetically coupled to the second line to bond the fourth line to the coupling terminal. A sub-line including a fifth line connecting the above and a sixth line that is electromagnetically coupled to the third line and connecting the fourth line and the isolation terminal.
The shortest distance to the first line and the shortest distance to the fourth line are the shortest distance to the second line, the shortest distance to the third line, the shortest distance to the fifth line, and the sixth line. With a ground conductor smaller than the shortest distance with,
Equipped with
At least a part of the first line and the fourth line is a directional coupler thicker than the second line, the third line, the fifth line and the sixth line. Input terminal and
With the output terminal
With the coupling terminal,
Isolation terminal and
A second line that is electrically connected between the input terminal and the output terminal and connects the first line, the first line and the input terminal, and the first line and the output terminal are connected. The third line, including the main line,
A fourth line electrically connected between the coupling terminal and the isolation terminal and electromagnetically coupled to the first line, and electromagnetically coupled to the second line to bond the fourth line to the coupling terminal. A sub-line including a fifth line connecting the above and a sixth line that is electromagnetically coupled to the third line and connecting the fourth line and the isolation terminal.
The shortest distance to the first line and the shortest distance to the fourth line are the shortest distance to the second line, the shortest distance to the third line, the shortest distance to the fifth line, and the sixth line. With a ground conductor smaller than the shortest distance with,
Equipped with
A plurality of the second lines are connected in parallel between the input terminal and the first line.
A plurality of the fifth lines to be electromagnetically coupled to the plurality of second lines are connected in series between the coupling terminal and the fourth line.
A plurality of the third lines are connected in parallel between the first line and the output terminal.
A directional coupler in which a plurality of the sixth lines to be electromagnetically coupled to the plurality of third lines are connected in series between the fourth line and the isolation terminal. With multiple dielectric layers,
The directional coupler according to claim 4 or 5, wherein the main line and the sub line are conductor patterns formed on the surface of at least one of the plurality of dielectric layers. The directional coupler according to any one of claims 1 to 6, wherein the second line, the third line, the fifth line, and the sixth line each include a line wound in a plan view. The first dielectric layer and
The first main line pattern provided on the surface of the first dielectric layer and
A first sub-line pattern provided on the surface of the first dielectric layer and at least a part thereof along at least a part of the first main line pattern.
A second dielectric layer that overlaps with the first dielectric layer,
A ground pattern provided on the surface of the second dielectric layer and overlapping the first main line pattern and the first sub line pattern,
A third dielectric layer provided with the second dielectric layer sandwiched between the first dielectric layer and the third dielectric layer.
A second main line pattern provided on the surface of the third dielectric layer and connected to one end of the first main line pattern, and a second main line pattern.
With a second sub-line pattern provided on the surface of the third dielectric layer, connected to one end of the first sub-line pattern, and at least partly provided along at least a part of the second main line pattern. ,
A third main line pattern provided on the surface of the third dielectric layer and connected to the other end of the first main line pattern, and a third main line pattern.
A third sub-line pattern provided on the surface of the third dielectric layer, connected to the other end of the first sub-line pattern, and at least partly provided along at least a part of the third main line pattern. When,
A directional coupler with. The shortest distance between the first main line pattern and the ground pattern and the shortest distance between the first sub line pattern and the ground pattern are the shortest distance between the second main line pattern and the ground pattern, and the second sub line pattern. The directional coupling according to claim 8, which is smaller than the shortest distance between the line pattern and the ground pattern, the shortest distance between the third main line pattern and the ground pattern, and the shortest distance between the third sub line pattern and the ground pattern. vessel.

Images