JP6947318B2 - Copper / graphene junction and its manufacturing method, and copper / graphene junction structure - Google Patents

Description

The present invention relates to a copper / graphene junction having a structure in which a copper member made of copper or a copper alloy and a graphene-containing carbonaceous member containing a graphene aggregate are bonded, a method for producing the same, and a copper / graphene junction structure. It is a thing.

Since the graphene-containing carbonaceous member containing the graphene aggregate is excellent in thermal conductivity, it is particularly suitable as a member constituting a heat radiating member, a thermal conductive member, and the like.
For example, by forming an insulating layer made of ceramics or the like on the surface of the graphene-containing carbonaceous member containing the graphene aggregate described above, it can be used as an insulating substrate.

Here, for example, in Patent Document 1, a structure in which graphene sheets are laminated along the first direction and an intermediate member (copper plate) joined to the end face of the structure in the second direction intersecting the first direction. Disclosed is an anisotropic heat conductive element in which the intermediate member is pressure-bonded to the end face via an insert material containing at least titanium.

Japanese Unexamined Patent Publication No. 2012-238733

By the way, in the above-mentioned insulating substrate, a cold cycle may be applied under the usage environment. In particular, recently, it may be used in a harsh environment such as an engine room, and a cold cycle under severe conditions with a large temperature difference may be loaded.
Here, in Patent Document 1 described above, an intermediate made of copper and a graphene structure are joined via an insert material containing titanium, but depending on the joining conditions, the intermediate made of copper and graphene are joined. It was not possible to firmly join the structure of the above, and there was a risk of peeling when a cold cycle under severe conditions was applied.

The present invention has been made in view of the above-mentioned circumstances, in which a copper member made of copper or a copper alloy and a graphene-containing carbonaceous member containing a graphene aggregate are firmly bonded to each other, and a cold cycle load is applied. It is an object of the present invention to provide a copper / graphene alloy having excellent thermal cycle reliability and a method for producing the same, without peeling even at times.

In order to solve such a problem and achieve the above object, the copper / graphene joint of the present invention comprises a copper member made of copper or a copper alloy, a graphene-containing carbonaceous member containing a graphene aggregate, and the like. Is a copper / graphene joint having a structure in which is bonded, and between the copper member and the graphene-containing carbonaceous member, Ti, Zr, Nb, and Hf are selected on the graphene-containing carbonaceous member side. An active metal carbide layer containing one or more active metal carbides is formed, and Mg is solid-dissolved in the Cu matrix between the active metal carbide layer and the copper member. It is characterized in that a solid melt layer is formed.

In the copper / graphene joint having this configuration, an active metal carbide layer is formed on the joint surface of the graphene-containing carbonaceous member at the joint interface between the copper member and the graphene-containing carbonaceous member, and the joint surface side of the copper member. An Mg solid-dissolved layer in which Mg is solid-dissolved is formed in the matrix phase of Cu. As a result, Mg in the Mg solid solution layer sufficiently reacts with the active metal in the active metal carbide layer, and the copper member is firmly bonded to the graphene-containing carbonaceous member via the active metal carbide layer. It is possible to prevent cracks and peeling from occurring at the bonding interface when a cold cycle load is applied. Further, since the copper / graphene joint having this structure contains copper as a constituent material, it has a function of efficiently dissipating heat as a heat spreader in the transitional period. Therefore, the copper / graphene joint having this configuration can maintain stable heat dissipation characteristics while suppressing the occurrence of peeling at the joint interface due to the thermal cycle, and can realize high reliability.

Further, in the copper / graphene conjugate of the present invention, it is preferable that the Mg solid solution layer contains a Cu-Mg intermetallic compound phase composed of an intermetallic compound containing Cu and Mg.
In this case, the Cu-Mg intermetallic compound phase is distributed on the bonding surface side with the active metal carbide layer and is greatly involved in the bonding, so that the strength of bonding with the active metal carbide layer can be increased. ..

Among the Mg solid solution layers, the area of a region within a range of a distance of 50 μm from the boundary between the active metal carbide layer and the Mg solid solution layer toward the copper member side is defined as A, and the Cu-Mg intermetallic compound phase is defined as A. When the area of is B, the area ratio B / A is preferably 0.3 or less.

Further, in the copper / graphene conjugate of the present invention, it is preferable that the Mg solid solution layer contains an active metal compound phase composed of an intermetallic compound containing Cu and the active metal.
In this case, the active metal compound phase is distributed on the bonding surface side with the active metal carbide layer and is greatly involved in the bonding, so that the strength of bonding with the active metal carbide layer can be increased.

Further, in the copper / graphene junction of the present invention, the graphene-containing carbonaceous member contains a graphene aggregate formed by depositing single-layer or multi-layer graphene and flat graphite particles, and the flat graphite. It is preferable that the particles are laminated with the graphene aggregate as a binder so that the basal surfaces thereof fold over, and the basal surfaces of the flat graphite particles are oriented in one direction.
In this case, the heat conduction characteristics of the graphene-containing carbonaceous member can be further improved.

The method for producing a copper / graphene joint of the present invention is a method for producing a copper / graphene joint for producing the above-mentioned copper / graphene joint, in which the copper member and the graphene-containing carbonaceous member are sandwiched between the copper member and the graphene-containing carbonaceous member. The active metal and Mg placement step for arranging one or more active metals and Mg selected from Ti, Zr, Nb, and Hf, and the copper member and the graphene-containing carbonaceous member are combined with the active metal and Mg. The copper member laminated via the active metal and Mg and the graphene-containing carbonaceous member are heat-treated and joined in a vacuum atmosphere while being pressurized in the lamination direction. In the active metal and Mg placement step, the amount of active metal is in ^{the range of 0.4 μmol / cm 2} or more and 47.0 μmol / cm ² or less, and the amount of Mg is 14 μmol / cm ² or more and 180 μmol. It is characterized in that it is within the range of / cm ^{2 or less.}

According to the method for producing a copper / graphene conjugate having this configuration, in the active metal and Mg placement step, the amount of active metal is set in ^{the range of 0.4 μmol / cm 2} or more and 47.0 μmol / cm ² or less, and the Mg amount is 14 μmol. since / cm ² or more 180Myumol / cm ² is within the range, it is possible to obtain a liquid phase necessary for the interfacial reaction sufficiently. Therefore, the copper member and the graphene-containing carbonaceous member can be reliably joined.

Here, in the method for producing a copper / graphene bonded body of the present invention, the pressurized load in the bonding step is within the range of 0.049 MPa or more and 1.96 MPa or less, and the heating temperature in the bonding step is 700 ° C. or higher. It is preferably within the range of 950 ° C. or lower.
In this case, in the joining step, the pressurizing load is within the range of 0.049 MPa or more and 1.96 MPa or less, and the heating temperature is within the range of 700 ° C. or more and 950 ° C. or less, which is necessary for the interfacial reaction. The liquid phase can be maintained and a uniform interfacial reaction can be promoted.

The copper / graphene bonding structure of the present invention is a copper / graphene bonding structure in which a copper member made of copper or a copper alloy and a graphene-containing carbonaceous member containing a graphene aggregate are bonded to each other. Between the member and the graphene-containing carbonaceous member, an active metal charcoal containing one or more charcoal of an active metal selected from Ti, Zr, Nb, and Hf on the graphene-containing carbonaceous member side. A layer is formed, and an Mg solid-dissolved layer in which Mg is solid-dissolved in the matrix phase of Cu is formed between the active metal carbide layer and the copper member.

In the copper / graphene bonding structure having this configuration, an active metal carbide layer is formed on the bonding surface of the graphene-containing carbonaceous member at the bonding interface between the copper member and the graphene-containing carbonaceous member, and the bonding surface side of the copper member is formed. An Mg solid-dissolved layer in which Mg is solid-dissolved is formed in the matrix phase of Cu. As a result, Mg in the Mg solid solution layer sufficiently reacts with the active metal in the active metal carbide layer, and the copper member is firmly bonded to the graphene-containing carbonaceous member via the active metal carbide layer. It is possible to prevent cracks and peeling from occurring at the bonding interface when a cold cycle load is applied. Further, since the copper / graphene joint structure having this structure contains copper as a constituent material, it has a function of efficiently dissipating heat as a heat spreader in a transitional period. Therefore, the copper / graphene bonding structure having this configuration can maintain stable heat dissipation characteristics while suppressing the occurrence of peeling at the bonding interface due to the thermal cycle, and can realize high reliability.

According to the present invention, a copper member made of copper or a copper alloy and a graphene-containing carbonaceous member containing a graphene aggregate are firmly bonded to each other, and peeling does not occur even under a cold cycle load. It is possible to provide a copper / graphene junction having excellent cycle reliability, a method for producing the same, and a copper / graphene junction structure.

It is a schematic explanatory drawing of the power module using the copper / graphene junction (insulation substrate) which is an embodiment of this invention. It is a schematic explanatory drawing of the copper / graphene junction (insulation substrate) which is an embodiment of this invention. It is a schematic diagram of the bonding interface between the copper member of the copper / graphene junction (insulating substrate) and the graphene-containing carbonaceous member according to the embodiment of the present invention. It is a flow chart which shows an example of the manufacturing method of the copper / graphene junction (insulation substrate) which is embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that each of the embodiments shown below is specifically described in order to better understand the gist of the invention, and is not limited to the present invention unless otherwise specified. In addition, the drawings used in the following description may be shown by enlarging the main parts for convenience in order to make the features of the present invention easy to understand, and the dimensional ratios of the respective components are the same as the actual ones. Is not always the case.

First, a copper / graphene junction (copper / graphene junction structure) according to an embodiment of the present invention will be described with reference to FIGS. 1 to 4.
The copper / graphene joint in the present embodiment is an insulating substrate 20 having a structure in which a copper member made of copper or a copper alloy and a graphene-containing carbonaceous member containing a graphene aggregate are joined.

First, a power module using the copper / graphene junction (insulated substrate 20) of the present embodiment will be described.
The power module 1 shown in FIG. 1 includes an insulating circuit board 10, a semiconductor element 3 bonded to one surface side (upper side in FIG. 1) of the insulating circuit board 10 via a solder layer 2, and an insulating circuit board 10. It is provided with a heat sink 31 arranged on the other surface side (lower side in FIG. 1).

The insulating circuit board 10 includes an insulating layer (insulating substrate 20), a circuit layer 12 arranged on one surface of the insulating layer (upper surface in FIG. 1), and the other surface of the insulating layer (lower surface in FIG. 1). The metal layer 13 arranged in the above is provided.
The insulating layer prevents electrical connection between the circuit layer 12 and the metal layer 13, and is composed of the insulating substrate 20 of the present embodiment.

The circuit layer 12 is formed by joining a metal plate having excellent conductivity to one surface of an insulating layer (insulating substrate 20). In the present embodiment, as the metal plate constituting the circuit layer 12, a copper plate made of copper or a copper alloy, specifically, a rolled plate of oxygen-free copper is used. A circuit pattern is formed in the circuit layer 12, and one surface (upper surface in FIG. 1) is a mounting surface on which the semiconductor element 3 is mounted.
Further, the thickness of the metal plate (copper plate) to be the circuit layer 12 is set within the range of 0.1 mm or more and 1.0 mm or less, and in the present embodiment, it is set to 0.6 mm.
The method of joining the metal plate (copper plate) to be the circuit layer 12 and the insulating substrate 20 is not particularly limited, and an active metal brazing material or the like can be used for joining.

The metal layer 13 is formed by joining a metal plate having excellent thermal conductivity to the other surface of the insulating layer (insulating substrate 20). In the present embodiment, as the metal plate constituting the metal layer 13, a copper plate made of copper or a copper alloy, specifically, a rolled plate of oxygen-free copper is used. Further, the thickness of the metal plate (copper plate) to be the metal layer 13 is set within the range of 0.1 mm or more and 1.0 mm or less, and in the present embodiment, it is set to 0.6 mm.
The method of joining the metal plate (copper plate) to be the metal layer 13 and the insulating substrate 20 is not particularly limited, and an active metal brazing material or the like can be used for joining.

The heat sink 31 is for cooling the above-mentioned insulating circuit board 10, and has a structure in which a plurality of flow paths 32 for circulating a cooling medium (for example, cooling water) are provided.
The heat sink 31 is preferably made of a material having good thermal conductivity, for example, aluminum or aluminum alloy, copper or copper alloy, and in this embodiment, it is made of 2N aluminum having a purity of 99 mass% or more. There is.
In this embodiment, the metal layer 13 of the insulating circuit board 10 and the heat sink 31 are joined by a solid phase diffusion joining method.

The semiconductor element 3 is configured by using a semiconductor material such as Si or SiC. The semiconductor element 3 is mounted on the circuit layer 12 via, for example, a solder layer 2 made of a Sn-Ag-based, Sn-In-based, or Sn-Ag-Cu-based solder material.

As shown in FIG. 2, the insulating substrate 20 of the present embodiment constituting the insulating layer has a copper plate 21 made of a copper member made of copper or a copper alloy, and a graphene-containing carbon substance containing a graphene aggregate. It has a structure in which a carbon plate 25 made of a member and a carbon plate 25 are laminated. Carbon plates 21 are joined to both main surfaces of the copper plate 21.
Here, as the insulating substrate 20, a carbon plate 25, a copper plate 21, and a carbon plate 25 are laminated in this order, but the copper plate 21 and the carbon plate 25 may be laminated alternately, and the number of layers is sufficient. There are no restrictions on. The outermost layer (end) in the stacking direction may be a carbon plate 25 or a copper plate 21 as in the present embodiment.

The graphene-containing carbonaceous member constituting the carbon plate 25 contains graphene aggregates formed by depositing single-layer or multi-layer graphene and flat graphite particles so that the flat graphite particles fold their basal surfaces. In addition, it is preferable that the graphene aggregate has a laminated structure as a binder. The basal surface of the flat graphite particles preferably has a structure oriented in one direction.

The flat graphite particles have a basal surface on which a carbon hexagonal network surface appears and an edge surface on which an end portion of the carbon hexagonal network surface appears. As the flat graphite particles, scaly graphite, scaly graphite, earthy graphite, flaky graphite, kiss graphite, pyrolytic graphite, highly oriented pyrolytic graphite and the like can be used.
Here, the average particle size of the graphite particles as seen from the basal surface is preferably in the range of 10 μm or more and 1000 μm or less, and more preferably in the range of 50 μm or more and 800 μm or less. By setting the average particle size of the graphite particles within the above range, the thermal conductivity is improved.
Further, the thickness of the graphite particles is preferably in the range of 1 μm or more and 50 μm or less, and more preferably in the range of 1 μm or more and 20 μm or less. By setting the thickness of the graphite particles within the above range, the orientation of the graphite particles is appropriately adjusted.
Further, by setting the thickness of the graphite particles within the range of 1/1000 to 1/2 of the particle size seen from the basal surface, excellent thermal conductivity and orientation of the graphite particles are appropriately adjusted.

The graphene aggregate is a deposit of single-layer or multi-layer graphene, and the number of layers of the multi-layer graphene is, for example, 100 layers or less, preferably 50 layers or less. This graphene aggregate can be produced, for example, by dropping a graphene dispersion in which single-layer or multi-layer graphene is dispersed in a solvent containing lower alcohol or water onto a filter paper and depositing the graphene while separating the solvent. It is possible.
Here, the average particle size of the graphene aggregate is preferably in the range of 1 μm or more and 1000 μm or less. By keeping the average particle size of the graphene aggregate within the above range, the thermal conductivity is improved.
Further, the thickness of the graphene aggregate is preferably in the range of 0.05 μm or more and less than 50 μm. By keeping the thickness of the graphene aggregate within the above range, the strength of the carbonaceous member is ensured.

Here, FIG. 3 shows a schematic view of the bonding interface between the copper plate 21 made of a copper member made of copper or a copper alloy and the carbon plate 25 made of a graphene-containing carbonaceous member. As shown in FIG. 3, between the copper plate 21 made of a copper member and the carbon plate 25 made of a graphene-containing carbonaceous member (joining interface 40), one kind of active metal carbide or one of the active metal carbides is formed on the joining surface of the carbon plate 25. An active metal carbide layer 41 containing two types is formed.
Further, the copper plate 21 contains a single metal such as Mg and Cu, intermetallic compounds (IMCs) such as Cu-Mg and Cu-Ti, and the like, and particularly at the bonding interface 40, the copper plate 21 and the active metal carbide are contained. An Mg solid solution layer 42 in which Mg is solid-solved in the matrix phase of Cu is formed between the layer 41 and the layer 41. The Mg solid solution layer 42 may have a Cu-Mg intermetallic compound phase composed of an intermetallic compound containing Cu and Mg, or an active metal compound composed of an intermetallic compound containing Cu and an active metal. Phases may be present.

This Cu-Mg intermetallic compound phase is _{composed of a Cu 2} Mg phase and / or _{a Cu Mg 2} phase.
In the Mg solid solution layer 42, the interface between the active metal carbide layer 41 and the Mg solid solution layer 42 in the cross section along the stacking direction of the copper plate 21 made of a copper member and the carbon plate 25 made of a graphene-containing carbonaceous member. When the area of the region within a distance of 50 μm from 40a toward the copper member side is A (μm ² ) and the area of the Cu-Mg intermetallic compound phase in the region is B (μm ² ), the area ratio The B / A is preferably 0.3 or less, more preferably 0.25 or less, and most preferably 0.15 or less.
The Mg solid solution layer 42 may not contain the Cu-Mg intermetallic compound phase, that is, the ratio B / A may be 0.

The active metal carbide layer 41 is formed by reacting the active metal contained in the bonding material interposed between the copper plate 21 and the carbon plate 25 at the time of bonding with the carbon contained in the carbon plate 25.
As the active metal constituting the active metal carbide layer 41, for example, one kind or two or more kinds selected from Ti, Zr, Hf, and Nb can be used. In the present embodiment, the active metal is Ti, and the active metal carbide layer 41 is composed of titanium carbide (Ti—C).

Here, if the thickness t1 of the active metal carbide layer 41 is less than 0.05 μm, the reaction between the active metal and carbon is not sufficient, and the copper plate 21 and the carbon plate 25 are joined via the active metal carbide layer 41. The strength may be insufficient. On the other hand, if the thickness t1 of the active metal carbide layer 41 exceeds 1.5 μm, cracks may occur in the active metal carbide layer 41 under a cold cycle load.
Therefore, in the present embodiment, it is preferable to set the thickness t1 of the active metal carbide layer 41 within the range of 0.05 μm or more and 1.5 μm or less.
The lower limit of the thickness t1 of the active metal carbide layer 41 is more preferably 0.1 μm or more, and more preferably 0.25 μm or more. On the other hand, the upper limit of the thickness t1 of the active metal carbide layer 41 is more preferably 1.2 μm or less, and more preferably 1.0 μm or less.

Next, the method for manufacturing the copper / graphene junction (insulated substrate 20) according to the present embodiment will be described with reference to the flow chart shown in FIG.

(Carbon plate forming step S01)
First, the above-mentioned flat graphite particles and graphene aggregates are weighed so as to have a predetermined mixing ratio, and these are mixed by an existing mixing device such as a ball mill.
A molded product is obtained by filling the obtained mixture in a mold having a predetermined shape and pressurizing the mixture. In addition, heating may be carried out at the time of pressurization.
Then, the obtained molded product is cut out to obtain a carbon plate 25.

The pressure at the time of molding is preferably in the range of 20 MPa or more and 1000 MPa or less, and more preferably in the range of 100 MPa or more and 300 MPa or less.
Further, the temperature at the time of molding is preferably in the range of 50 ° C. or higher and 300 ° C. or lower.
Further, the pressurization time is preferably in the range of 0.5 minutes or more and 10 minutes or less.

(Active metal and Mg placement step S02)
Next, a copper plate 21 made of copper or a copper alloy is prepared, and the joint surface of the copper plate 21 and the joint surface of the carbon plate 25 obtained in the previous step are opposed to each other. , Nb, Hf, one or more active metals, Cu, and Mg can be arranged.
Here, as the bonding material, a material containing Mg, Cu, and an active metal (Ti in this embodiment) is used.
The joining material may be in the form of a paste or in the form of a foil. Further, for example, a Cu—Mg alloy and an active metal may be laminated. The bonding material may further contain unavoidable impurities.
The active metal, Cu, and Mg can be arranged by sputter, (co) vapor deposition, foil material, or application of paste (hydrides of active metal and Mg are also available).

In this active metal and Mg placement step S02, the amount of active metal to be placed ^{is preferably in the range of 0.4 μmol / cm 2} or more and 47.0 μmol / cm ² or less, and the Mg amount is 14 μmol / cm ² or more and 180 μmol / cm. It is preferably within the range of ^{2 or less.} Furthermore, it is also possible to arrange the Cu amount in the range 4μmol / cm ² or more 350μmol / cm ² less.

(Laminating step S03)
Next, the above-mentioned carbon plate 25 is laminated (bonded) on each of both main surfaces of the copper plate 21 via a joining material.

(Joining step S04)
Next, the copper plate 21 and the carbon plate 25 laminated via the bonding material are pressed in the laminating direction, heated, and then cooled to join the copper plate 21 and the carbon plate 25.
Here, the heating temperature is preferably in the range of 700 ° C. or higher and 950 ° C. or lower. Further, the holding time at the heating temperature is preferably in the range of 10 minutes or more and 180 minutes or less. Further, the pressurizing pressure is preferably in the range of 0.049 MPa or more and 1.96 MPa or less. Further, the atmosphere during bonding is preferably a non-oxidizing atmosphere.

In this bonding step S04, the active metal (Ti in the present embodiment) contained in the bonding material reacts with the carbon contained in the carbon plate 25 to form the active metal carbide layer 41 on the bonding surface of the carbon plate 25. ..
Then, a part of Cu, Mg, and the active metal contained in the bonding material is absorbed by the copper plate 21, and further, Cu and Mg contained in the bonding material react with each other to form a space between the copper plate 21 and the active metal carbide layer 41. In addition, an Mg solid solution layer 42 in which Mg is solid-solved is formed in the matrix phase of Cu. The Mg solid solution layer 42 may contain an active metal compound phase composed of an intermetallic compound containing Cu and an active metal.

By the above steps, the copper / graphene junction (insulating substrate 20) according to the present embodiment is manufactured.

Up to this point, the insulating substrate 20 composed of the copper member 21 and the graphene-containing carbonaceous member 25 sandwiching the copper member 21 has been described as an example, but the copper / graphene junction (copper / graphene junction structure) of the present embodiment has been described. As long as it has a bond between copper and graphene (including a joint). For example, it may be a copper / graphene / ceramics joint (copper / graphene / ceramics joint structure) in which a ceramics member is further bonded to a graphene-containing carbonaceous member, or ceramics / graphene / copper / graphene / ceramics joint. It may be a body (ceramics / graphene / copper / graphene / ceramics joint structure). In this case, as the bonding material between the graphene member and the ceramic member, a material containing Cu and an active metal element such as Ag, Mg, or P is used. As the ceramic member (ceramic plate), for example, a member containing oxides such as _{Al 2} O ₃ and Zr-added Al ₂ O ₃ and nitrides such as Al N _{and Si 3 N 4} and SiAl ON and the like is used.

According to the copper / graphene junction (insulating substrate 20) of the present embodiment having the above configuration, graphene is formed at the junction interface between the copper member (copper plate 21) and the graphene-containing carbonaceous member (carbon plate 25). The active metal carbide layer 41 is formed on the joint surface of the carbonaceous member, and the Mg solid solution layer 42 in which Mg is solid-dissolved in the matrix phase of Cu is formed on the joint surface side of the copper member. As a result, Mg in the Mg solid solution layer 42 sufficiently reacts with the active metal in the active metal carbide layer 41, and the copper member is firmly bonded to the graphene-containing carbonaceous member via the active metal carbide layer 41. Therefore, it is possible to prevent cracks and peeling from occurring at the bonding interface when a cold cycle load is applied. Further, since the copper / graphene conjugate of the present embodiment contains copper as a constituent material thereof, it has a function of efficiently dissipating heat as a heat spreader in a transitional period. Therefore, the copper / graphene joint of the present embodiment can maintain stable heat dissipation characteristics while suppressing the occurrence of peeling at the joint interface 40 due to the thermal cycle, and can realize high reliability.

Alternatively, in the copper / graphene conjugate of the present embodiment, it is preferable that the Mg solid solution layer contains an active metal compound phase composed of an intermetallic compound containing Cu and the active metal. In this case, the active metal compound phase is distributed on the bonding surface side with the active metal carbide layer and is greatly involved in the bonding, so that the strength of bonding with the active metal carbide layer can be increased.

Further, in the copper / graphene conjugate of the present embodiment, the graphene-containing carbonaceous member contains a graphene aggregate formed by depositing single-layer or multi-layer graphene and flat graphite particles, and the flat graphite. It is preferable that the particles are laminated with the graphene aggregate as a binder so that the basal surfaces thereof overlap, and the flat-shaped graphite particles have a structure in which the basal surfaces are oriented in one direction. In this case, the heat conduction characteristics of the graphene-containing carbonaceous member can be further improved.

Although the embodiments of the present invention have been described above, the present invention is not limited to this, and can be appropriately changed without departing from the technical idea of the invention.
For example, in the present embodiment, a semiconductor element (power semiconductor element) is mounted on the circuit layer of the insulated circuit board to form a power module, but the present invention is not limited to this. For example, an LED element may be mounted on an insulated circuit board to form an LED module, or a thermoelectric element may be mounted on a circuit layer of an insulated circuit board to form a thermoelectric module.

Further, in the present embodiment, as shown in FIG. 1, it has been described that the insulating substrate 20 of the present embodiment is applied as the insulating layer of the insulating circuit board 10, but the present invention is not limited to this. There is no particular limitation on the method of using the copper / graphene conjugate of the present invention.

Confirmation experiments (Examples 1 to 8 and 11 to 19 of the present invention and Comparative Examples 1 to 3) performed to confirm the effectiveness of the present invention will be described.

As disclosed in the present embodiment, the flat graphite particles and the graphene aggregate are mixed in a predetermined compounding ratio, mixed, and heated by pressurization to form the flat graphite particles on the basal surface thereof. A molded body having a structure in which graphene aggregates were laminated as a binder was obtained so as to be folded over. The obtained molded product was cut out to obtain a carbon plate (40 mm × 40 mm × thickness 1.5 mm).

Mg and active metal are arranged on one surface of this carbon plate with the amount of Mg and the amount of active metal shown in Tables 1 and 2, and a copper plate (37 mm × 37 mm × thickness 0) is placed on the arranged Mg and active metal. .6 mm) was laminated, and the carbon plate and the copper plate were joined under the conditions shown in Tables 1 and 2.
In addition, Mg and active metal were arranged by using co-deposited film.
Here, the bonding interface between the carbon plate and the copper plate was observed by the following procedure, and the presence or absence of the active metal carbide layer, the presence or absence of the active metal compound phase, the presence or absence of the Mg solid solution layer, etc. were confirmed.

(Presence or absence of active metal carbide layer)
In the cross section of the obtained bonded body along the stacking direction, the bonding interface between the copper plate and the carbon plate is measured from a magnification of 20000 times using a scanning transmission electron microscope (Titan ChemiSTEM (with EDS detector) manufactured by FEI). Observation was performed under the conditions of 120,000 times and an acceleration voltage of 200 kV. Mapping is performed using an energy dispersive X-ray analysis method (NSS7 manufactured by Thermo Scientific Co., Ltd.), and an electron beam focused to about 1 nm is irradiated in the region where the active metal and C overlap (NBD (nanobeam diffraction) method). ) Was obtained, and when the electron diffraction pattern was an intermetal compound between the active metal and C, the active metal carbide layer was set to "Yes".

(Presence / absence and area ratio of Cu-Mg intermetallic compound phase)
In the cross section of the obtained bonded body along the stacking direction, the bonding interface between the copper plate and the carbon plate was subjected to a magnification of 2000 times and an acceleration voltage of 15 kV using an electron probe microanalyzer (JXA-8539F manufactured by JEOL Ltd.). By observing under the conditions, the elemental MAP of Mg in the region including the bonding interface (400 μm × 600 μm) (hereinafter referred to as the observation region) was obtained. The Cu-Mg metal compound is a region in which the Cu concentration is 5 atomic% or more and the Mg concentration is 30 atoms or more and 70 atomic% or less on a 5-point average of the quantitative analysis in the region where the presence of Mg is confirmed. As a phase, the presence or absence of a Cu-Mg intermetallic compound phase was confirmed. The concentration here is the concentration when the total amount of Cu and Mg is 100 atomic%.
Further, in the bonded body of Examples 11 to 19 of the present invention, the area of the region within the range of a distance of 50 μm from the boundary between the active metal carbide layer and the Mg solid solution layer to the copper member side in the observation region is defined as A for observation. The area ratio B / A when the area of the Cu-Mg intermetallic compound phase in the region within a range of 50 μm from the boundary between the active metal carbide layer and the Mg solid solution layer toward the copper member side is B. It was measured.

(Presence or absence of active metal compound phase)
In the cross section of the obtained bonded body along the stacking direction, the bonding interface between the copper plate and the carbon plate was subjected to a magnification of 2000 times and an acceleration voltage of 15 kV using an electron probe microanalyzer (JXA-8539F manufactured by JEOL Ltd.). By observing under the conditions, the elemental MAP of the active metal in the region including the bonding interface (400 μm × 600 μm) was obtained. The Cu-active metal is the region where the Cu concentration is 5 atomic% or more and the active metal concentration is 16 atoms or more and 70 atomic% or less on a 5-point average of the quantitative analysis in the region where the presence of the active metal is confirmed. The presence or absence of an active metal compound phase was confirmed as the intermetallic compound phase. The concentration here is the concentration when the total amount of Cu and the active metal is 100 atomic%.

(Presence or absence of Mg solid solution phase)
In the cross section of the obtained bonded body along the laminating direction, a region (400 μm × 600 μm) including the bonding interface between the copper plate and the carbon plate was formed by using an electron probe microanalyzer (JXA-8039F manufactured by JEOL Ltd.). Observation was performed under the conditions of a magnification of 2000 times and an acceleration voltage of 15 kV. Quantitative analysis was performed at intervals of 10 μm from the surface of the carbon plate toward the copper plate side in the range of 10 points or more and 20 points or less according to the thickness of the copper plate, and the Mg concentration was 0.01 atomic% or more and 6.9 atomic% or less. The presence or absence of the Mg solid solution phase was confirmed with a certain region as the Mg solid solution phase.

Then, 2000 cycles of cooling and heating cycles of −40 ° C. × 5 minutes ⇔ 150 ° C. × 5 minutes were applied to the obtained conjugates of Examples 1 to 8 of the present invention and Comparative Examples 1 to 3.
Further, the obtained joints of Examples 11 to 19 of the present invention were subjected to a load test in which heating at 500 ° C. for 30 minutes and cooling to room temperature (25 ° C.) were repeated 10 times in a vacuum atmosphere.
Then, for these joints, the initial bonding area and non-bonding area between the carbon plate and the copper plate were measured using an ultrasonic flaw detector (FineSAT200 manufactured by Hitachi Power Solutions, Ltd.), and the carbon plate was obtained from the following formula. The bonding ratio at the interface with the copper plate was calculated.
(Joining rate) = [{(Initial bonding area)-(Non-joining area)} / (Initial bonding area)] x 100
The initial joining area here means the area of the portion that should be joined. Further, the non-bonded area means the area of the portion to be joined that is not actually joined, that is, the portion that is peeled off. In the image obtained by binarizing the ultrasonic flaw detection image, the peeling is shown by the white part in the joint part, so the area of this white part is defined as the non-joint area (peeling area).

The copper / graphene joints of Comparative Examples 1 to 3 do not have an active metal carbide layer provided at the joint portion. Therefore, the bonding ratio between the copper plate and the carbon plate shows a low value of less than 60% at the initial stage, and becomes 0% after the cold cycle load, indicating that the bonding is completely eliminated.

On the other hand, in the copper / graphene joints of Examples 1 to 8 and 11 to 19 of the present invention, since the active metal carbide layer is provided at the joint portion, the bonding ratio between the copper plate and the carbon plate exceeds 95%. It shows a high value, and it can be seen that it does not fall below 90% even when the same thermal cycle load or furnace test as in Comparative Examples 1 to 3 is performed. From these results, the copper / graphene conjugates of Examples 1 to 8 and 11 to 19 of the present invention have sufficient strength to suppress peeling under a cooling cycle load, and realize high reliability. You can see that there is.

20 Insulated substrate (copper / graphene junction)
21 Copper plate (copper member)
25 Carbon plate (graphene-containing carbonaceous material)
40 Bonding interface 40a Boundary surface 41 Active metal carbide layer 42 Mg solid solution layer

Claims (8)

A copper / graphene junction having a structure in which a copper member made of copper or a copper alloy and a graphene-containing carbonaceous member containing a graphene aggregate are bonded.
Between the copper member and the graphene-containing carbonaceous member, the activity of the graphene-containing carbonaceous member side containing a carbide of one or more active metals selected from Ti, Zr, Nb, and Hf. A metal carbide layer is formed,
A copper / graphene conjugate characterized in that an Mg solid solution layer in which Mg is solid-solved is formed in the matrix phase of Cu between the active metal carbide layer and the copper member. The copper / graphene conjugate according to claim 1, wherein a Cu-Mg intermetallic compound phase composed of an intermetallic compound containing Cu and Mg is present in the Mg solid solution layer. Among the Mg solid solution layers, the area of a region within a range of a distance of 50 μm from the boundary between the active metal carbide layer and the Mg solid solution layer toward the copper member side is defined as A, and the Cu-Mg intermetallic compound phase is defined as A. The copper / graphene bond according to claim 2, wherein the area ratio B / A is 0.3 or less, where B is defined as the area of B. The copper / according to any one of claims 1 to 3, wherein an active metal compound phase composed of an intermetallic compound containing Cu and the active metal is present in the Mg solid solution layer. Graphene junction. The graphene-containing carbonaceous member includes a graphene aggregate formed by depositing single-layer or multi-layer graphene and flat graphite particles, and the graphene aggregates such that the flat graphite particles fold their basal surfaces. The copper according to any one of claims 1 to 4, wherein the graphite particles are laminated with the body as a binder, and the basal surface of the flat graphite particles is oriented in one direction. / Graphene junction. A method for producing a copper / graphene conjugate according to any one of claims 1 to 5.
An active metal and Mg placement step of arranging one or more active metals and Mg selected from Ti, Zr, Nb, and Hf between the copper member and the graphene-containing carbonaceous member, and the copper. A laminating step of laminating the member and the graphene-containing carbonaceous member via an active metal and Mg, and
A joining step in which the copper member laminated via the active metal and Mg and the graphene-containing carbonaceous member are joined by heat treatment in a vacuum atmosphere while being pressurized in the stacking direction.
Is equipped with
In the active metal and Mg arrangement step, making the active metal amount 0.4μmol / cm ² or more 47.0μmol / cm ² within the range, in the range 14μmol / cm ² or more 180μmol / cm ² or less of the amount of Mg A method for producing a copper / graphene conjugate. The pressurizing load in the joining step is within the range of 0.049 MPa or more and 1.96 MPa or less.
The method for producing a copper / graphene bonded body according to claim 6, wherein the heating temperature in the bonding step is in the range of 700 ° C. or higher and 950 ° C. or lower. A copper / graphene bonded structure in which a copper member made of copper or a copper alloy and a graphene-containing carbonaceous member containing a graphene aggregate are bonded.
Between the copper member and the graphene-containing carbonaceous member, the activity of the graphene-containing carbonaceous member side containing a carbide of one or more active metals selected from Ti, Zr, Nb, and Hf. A metal carbide layer is formed,
A copper / graphene bonding structure characterized in that an Mg solid solution layer in which Mg is solid-solved is formed in the matrix phase of Cu between the active metal carbide layer and the copper member.

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