JP6924661B2 - Exposure equipment, substrate processing equipment, exposure method and substrate processing method - Google Patents

Description

The present invention relates to an exposure apparatus that performs exposure processing on a substrate, the substrate processing apparatus, relates EXPOSURE method and a substrate processing method.

In recent years, in order to miniaturize the pattern formed on a substrate, the development of a photolithography technique using the directed self assembly (DSA) of a block copolymer has been promoted. In such a photolithography technique, the block polymer is modified by exposing one surface of the substrate after heat treatment is applied to the substrate coated with the block polymer. In this process, it is required to accurately adjust the exposure amount of the substrate.

Patent Document 1 describes an exposure apparatus that performs an exposure process on a film (DSA film) containing an inductive self-assembling material on a substrate. The exposure apparatus has a light emitting portion capable of emitting vacuum ultraviolet rays having a strip-shaped cross section, and is configured to be movable from a front position to a rear position of the light emitting portion so that the substrate crosses the path of the vacuum ultraviolet rays from the light emitting portion. NS. Before the exposure process, the illuminance of the vacuum ultraviolet rays is detected in advance by the illuminance sensor, and the moving speed of the substrate is calculated based on the detected illuminance so that the vacuum ultraviolet rays of a desired exposure amount are irradiated. During the exposure process, the substrate moves at the calculated moving speed, so that the DSA film on the substrate is irradiated with a desired exposure amount of vacuum ultraviolet rays.

Japanese Unexamined Patent Publication No. 2016-183990

When oxygen is present in the path of the vacuum ultraviolet rays irradiated to the substrate during the exposure process, oxygen molecules that receive the vacuum ultraviolet rays are separated into oxygen atoms and the separated oxygen atoms are recombined with other oxygen molecules to generate ozone. do. In this case, the vacuum ultraviolet rays reaching the substrate are attenuated. Therefore, in Patent Document 1, the gas in the casing of the exposure apparatus is discharged so that the oxygen concentration during the exposure process is reduced to 1% or less. However, since it takes a long time to discharge oxygen molecules, the efficiency of the exposure processing of the substrate is lowered.

An object of the present invention is to provide an exposure apparatus, a substrate processing apparatus, an exposure method, and a substrate processing method capable of improving the efficiency of exposure processing of a substrate.

(1) The exposure apparatus according to the first invention has a processing chamber for accommodating a substrate, a mounting portion on which the substrate is placed in the processing chamber, and a first exhaust portion for discharging gas in the processing chamber. The first air supply unit for supplying the inert gas to the processing chamber, the light projecting unit that is arranged at the upper part of the processing chamber and emits vacuum ultraviolet rays, and the first exhaust unit are opened, and the first After a predetermined first time has elapsed from the start of gas discharge in the processing chamber by the exhaust unit of the above, the first air supply unit is opened while the first exhaust unit is open, and the first air supply unit is opened to the processing chamber. The first air supply control unit that controls the first air supply unit so that the supply of the inert gas is started, and the oxygen concentration in the gas in the treatment chamber is reduced to a predetermined concentration. A light projecting control unit that controls the light projecting unit to expose the substrate by irradiating the substrate in the processing room with vacuum ultraviolet rays, and a light projecting unit placed when the substrate is carried into the processing room and carried out of the processing room. The part is in the first position in the processing chamber, and the mounting part is in the second position closer to the light projecting part than the first position when the light emitting part irradiates the substrate with vacuum ultraviolet rays. It is provided with a drive unit that moves the mounting unit to the first position and the second position, and the light projecting unit is arranged above the mounting unit, emits vacuum ultraviolet rays downward, and the second position is. Below the floodlight, the first position is below the second position, the floodlight overlaps the mounting section in plan view, and the first and second positions are in plan view. overlapping a light projecting portion, the driving portion, Ru raises and lowers the mounting portion between a first position and a second position.

In this exposure apparatus, the mounting portion is moved to the first position in the processing chamber by the driving portion. In this state, the substrate is carried into the processing chamber and placed on the mounting portion. Here, the first exhaust unit starts discharging the gas in the processing chamber. After a predetermined first time has elapsed from the start of gas discharge, the first air supply unit starts supplying the inert gas to the treatment chamber. In this case, the gas in the treatment chamber is replaced with the inert gas, and the oxygen concentration decreases.

When the oxygen concentration in the gas in the processing chamber drops to a predetermined concentration, the driving unit moves the mounting unit to a second position closer to the light projecting unit than the first position. In addition, the light projecting unit irradiates the substrate in the processing chamber with vacuum ultraviolet rays. As a result, the substrate is exposed with almost no ozone generation. After that, the mounting portion is moved to the first position by the driving unit, and the substrate is carried out from the processing chamber.

According to this configuration, by moving the mounting portion to the first position, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting portion. Further, when the light projecting portion irradiates the substrate with vacuum ultraviolet rays, the mounting portion moves to the second position, so that the substrate is efficiently exposed in a state where the light projecting portion and the substrate are close to each other. Can be done.

Further, after the first time has elapsed since the discharge of the gas in the treatment chamber was started, the supply of the inert gas to the treatment chamber is started. In this case, oxygen in the treatment chamber is discharged to the outside of the treatment chamber together with other gases before the supply of the inert gas. As a result, the pressure in the treatment chamber is reduced and the amount of oxygen is reduced. After that, the inert gas is supplied to the treatment chamber, and a small amount of oxygen remaining in the treatment chamber is discharged to the outside of the treatment chamber together with the inert gas. Therefore, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is brought into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.
Further, the light projecting unit is arranged above the mounting unit, emits vacuum ultraviolet rays downward, the second position is below the light projecting unit, and the first position is below the second position. The drive unit raises and lowers the mounting unit between the first position and the second position. In this case, the substrate can be efficiently transferred between the processing chamber and the outside.

(2) In the exposure apparatus, the exhaust of the gas in the processing chamber is stopped after a predetermined second time has elapsed from the start of the supply of the inert gas to the processing chamber by the first air supply unit. An exhaust control unit that controls the first exhaust unit may be further provided. In this case, the inert gas is further supplied to the treatment chamber in a state where the discharge of the gas in the treatment chamber is stopped. As a result, the oxygen concentration in the gas in the treatment chamber can be further reduced, and the generation of ozone can be prevented more efficiently.

( 3 ) When the gas in the processing chamber is discharged by the first exhaust unit, the drive unit is placed in a third position where the mounting unit is above the first position and below the second position. The mounting portion may be moved as it is. In this case, since the spaces above and below the mounting portion at the third position are relatively large, oxygen is unlikely to stagnate. Therefore, oxygen can be efficiently discharged.
(4) The exposure apparatus according to the second invention includes a processing chamber for accommodating a substrate, a mounting portion on which the substrate is placed in the processing chamber, and a first exhaust portion for discharging gas in the processing chamber. The first air supply unit for supplying the inert gas to the processing chamber, the light projecting unit that emits vacuum ultraviolet rays, and the first exhaust unit are predetermined after the gas discharge in the processing chamber is started. After the lapse of the first time, the first air supply control unit that controls the first air supply unit so that the supply of the inert gas to the treatment chamber is started, and the gas in the treatment chamber A light projecting control unit that controls the light projecting unit to expose the substrate by irradiating the substrate in the processing chamber with vacuum ultraviolet rays in a state where the oxygen concentration is lowered to a predetermined concentration, and a light projecting control unit that controls the light projecting unit to expose the substrate, and the substrate into the processing chamber. The mounting unit is in the first position in the processing chamber when the substrate is carried in and out of the processing chamber, and the mounting portion is located in the first position when the light projecting unit irradiates the substrate with vacuum ultraviolet rays. A drive unit for moving the mounting unit to the first position and the second position is provided so that the mounting unit is located at the second position near the floodlight unit, and the floodlighting unit is arranged above the mounting unit. , The vacuum ultraviolet rays are emitted downward, the second position is below the light projecting part, the first position is below the second position, and the drive part has the mounting part as the first position and the first position. A third position above the first position and below the second position when the gas in the processing chamber is discharged by the first exhaust unit by moving up and down between the two positions. Move the mounting part so that it is in the position of.
In this exposure apparatus, the mounting portion is moved to the first position in the processing chamber by the driving portion. In this state, the substrate is carried into the processing chamber and placed on the mounting portion. Here, the first exhaust unit starts discharging the gas in the processing chamber. After a predetermined first time has elapsed from the start of gas discharge, the first air supply unit starts supplying the inert gas to the treatment chamber. In this case, the gas in the treatment chamber is replaced with the inert gas, and the oxygen concentration decreases.
When the oxygen concentration in the gas in the processing chamber drops to a predetermined concentration, the driving unit moves the mounting unit to a second position closer to the light projecting unit than the first position. In addition, the light projecting unit irradiates the substrate in the processing chamber with vacuum ultraviolet rays. As a result, the substrate is exposed with almost no ozone generation. After that, the mounting portion is moved to the first position by the driving unit, and the substrate is carried out from the processing chamber.
According to this configuration, by moving the mounting portion to the first position, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting portion. Further, when the light projecting portion irradiates the substrate with vacuum ultraviolet rays, the mounting portion moves to the second position, so that the substrate is efficiently exposed in a state where the light projecting portion and the substrate are close to each other. Can be done.
Further, after the first time has elapsed from the start of the discharge of the gas in the treatment chamber, the supply of the inert gas to the treatment chamber is started. In this case, oxygen in the treatment chamber is discharged to the outside of the treatment chamber together with other gases before the supply of the inert gas. As a result, the pressure in the treatment chamber is reduced and the amount of oxygen is reduced. After that, the inert gas is supplied to the treatment chamber, and a small amount of oxygen remaining in the treatment chamber is discharged to the outside of the treatment chamber together with the inert gas. Therefore, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is brought into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.
Further, the drive unit is in a third position where the mounting unit is above the first position and below the second position when the gas in the processing chamber is discharged by the first exhaust unit. Move the mounting part so that. In this case, since the spaces above and below the mounting portion at the third position are relatively large, oxygen is unlikely to stagnate. Therefore, oxygen can be efficiently discharged.

(5) The first exhaust unit has an exhaust port for discharging gas in the treatment chamber, the first air supply unit has an air supply port for supplying an inert gas in the treatment chamber, and the exhaust port has an exhaust port. , The air supply port may be arranged either above or below the third position, and the air supply port may be arranged either above or below the third position. In this case, the flow of the inert gas is formed in the spaces above and below the mounting portion at the third position. As a result, oxygen can be discharged more efficiently.

(6) The exhaust port may be arranged below the third position, and the air supply port may be arranged above the third position. In this case, the inert gas can be directly supplied to the space above the mounting portion at the third position. As a result, oxygen between the mounting portion and the light projecting portion can be discharged more efficiently, and the exposure of the substrate can be started in a short time from the loading of the substrate.

(7) The exhaust port and the air supply port may be arranged so as to sandwich the third position. In this case, a flow of inert gas is formed along the space around the mounting portion at the third position. As a result, oxygen can be discharged more efficiently.

(8) The exposure apparatus further includes a plurality of support members extending in the vertical direction in the processing chamber, the upper ends of the plurality of support members are higher than the first position and lower than the second position, and the mounting portion is , The plurality of support members may have a plurality of through holes through which the plurality of support members can pass, and the plurality of support members may penetrate the plurality of through holes of the mounting portion when the mounting portion is in the first position.

In this case, the plurality of support members can support the substrate carried into the processing chamber at the upper end higher than the first position and lower than the second position. Therefore, the substrate can be easily mounted on the mounting portion by raising the mounting portion from the first position. Further, the substrate can be supported by the upper ends of the plurality of support members by lowering the mounting portion from the second position. As a result, the substrate can be easily carried out of the processing chamber from the upper ends of the plurality of support members.

(9) The exposure apparatus further includes a pressure control unit that controls the pressure in the light projecting unit so that the pressure in the light projecting unit matches or approaches the pressure in the processing chamber, and the light projecting unit is a translucent window. It has a member, and the substrate in the processing chamber may be irradiated with vacuum ultraviolet light through the window member .

In this case, the substrate in the processing chamber is irradiated with vacuum ultraviolet rays from the light projecting portion through the window member. Here, since the pressure in the light projecting unit is controlled so that the pressure in the light projecting unit matches or approaches the pressure in the processing room, the gas in the processing room is discharged before the air is supplied to the processing room. Even in this case, there is almost no pressure difference between the processing chamber and the floodlight. Therefore, it is possible to prevent stress from being generated in the window member. As a result, the life of the window member is extended. Further, since it is not necessary to increase the thickness of the window member, the transmittance of the window member is improved. As a result, the efficiency of the exposure processing of the substrate can be improved.

(10) The pressure control unit includes a second exhaust unit for discharging the gas in the light projecting unit, a second air supply unit for supplying an inert gas into the light projecting unit, and a second exhaust unit. A second air supply unit that controls the second air supply unit so that the supply of the inert gas into the light projecting unit is started after the first time has elapsed since the discharge of the gas in the light projecting unit is started. It may include an air supply control unit. In this case, the pressure in the floodlight can be matched to or close to the pressure in the processing chamber by simple control.

(11) The pressure control unit may include a connecting unit that connects the internal space of the processing chamber and the internal space of the light projecting unit, and a second air supply unit that supplies the inert gas into the light projecting unit. In this case, the pressure in the floodlight can be matched to or close to the pressure in the processing chamber with simpler control.

(12) The substrate processing apparatus according to the third invention includes a coating processing unit that forms a film on the substrate by applying a processing liquid to the substrate, and a heat treatment unit that heat-treats the substrate on which the film is formed by the coating processing unit. The exposed apparatus according to the first or second invention for exposing a substrate heat-treated by the heat-treated unit, and a developing processing unit for developing a film of the substrate by supplying a solvent to the substrate exposed by the exposure apparatus. ..

In this substrate processing apparatus, a film is formed on the substrate by applying the processing liquid to the substrate by the coating processing unit. The substrate on which the film is formed by the coating treatment section is heat-treated by the heat treatment section. The substrate heat-treated by the heat-treated section is exposed by the above-mentioned exposure apparatus. The film of the substrate is developed by supplying a solvent to the substrate exposed by the exposure apparatus by the developing processing unit.

In the exposure apparatus, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting unit, and the substrate can be efficiently exposed in a state where the light projecting unit and the substrate are in close proximity to each other. can. In addition, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is carried into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.

(13) The treatment liquid may contain an inducible self-assembling material. In this case, the substrate coated with the treatment liquid containing the inductive self-assembling material is heat-treated, so that microphase separation occurs on one surface of the substrate. In addition, a substrate on which two types of polymer patterns are formed by microphase separation is exposed and developed. As a result, one of the two types of polymers can be removed to form a finely divided pattern.

(14) The exposure method according to the fourth invention includes a step of moving the mounting portion to the first position in the processing chamber in the emission direction of the vacuum ultraviolet rays by the driving unit, and carrying the substrate into the processing chamber to carry the mounting portion into the processing chamber. The step of placing the gas in the processing chamber, the step of starting the discharge of gas in the processing chamber by the first exhaust unit, the step of opening the first exhaust unit, and the discharge of gas in the processing chamber by the first exhaust unit are started. After a predetermined first time has elapsed , the first air supply unit is opened while the first exhaust unit is open, and the first air supply unit supplies the inert gas to the treatment chamber. With the step to start and the state where the oxygen concentration in the gas in the processing chamber has dropped to a predetermined concentration, the drive unit raises the mounting unit above the first position in the emission direction of the vacuum ultraviolet light and the floodlight unit. A step of moving the substrate to a second position below the mounting portion, a step of exposing the substrate by irradiating the substrate in the lower processing chamber with vacuum ultraviolet rays by a light projecting unit arranged above the mounting portion, and a driving unit. and moving the mounting portion by a first position, seen including a step of unloading the substrate from the processing chamber, the light projecting portion overlaps with the mounting portion in a plan view, a first position and a second The position overlaps the light projecting part in a plan view .

According to this exposure method, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting unit, and the substrate is efficiently exposed in a state where the light projecting unit and the substrate are in close proximity to each other. be able to. In addition, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is carried into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.
Further, the light projecting unit is arranged above the mounting unit, emits vacuum ultraviolet rays downward, the second position is below the light projecting unit, and the first position is below the second position. The drive unit raises and lowers the mounting unit between the first position and the second position. In this case, the substrate can be efficiently transferred between the processing chamber and the outside.
(15) The exposure method according to the fifth invention includes a step of moving the mounting portion to the first position in the processing chamber in the emission direction of the vacuum ultraviolet rays by the driving unit, and carrying the substrate into the processing chamber to carry the mounting portion into the processing chamber. The mounting unit is in the first position when the gas in the processing chamber is discharged by the first exhaust unit and the step of starting the discharge of the gas in the processing chamber by the first exhaust unit. A step of moving the mounting portion so as to be in a third position above the second position and below the second position, and a predetermined step after the first exhaust portion starts discharging the gas in the processing chamber. A step of starting the supply of the inert gas to the treatment chamber by the first air supply unit after the lapse of the first time, and a state in which the oxygen concentration in the gas in the treatment chamber has decreased to a predetermined concentration. Then, the step of moving the mounting portion to the second position above the third position and below the floodlight portion in the emission direction of the vacuum ultraviolet rays by the driving unit, and the step of moving the mounting portion above the mounting portion. A step of exposing the substrate by irradiating the substrate in the processing chamber below with a light projecting unit with vacuum ultraviolet rays, a step of moving the mounting portion to the first position by the drive unit, and a step of carrying out the substrate from the processing chamber. The light projecting unit includes and overlaps the mounting unit in a plan view, and the first position, the second position, and the third position overlap the light projecting unit in a plan view.
According to this exposure method, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting unit, and the substrate is efficiently exposed in a state where the light projecting unit and the substrate are in close proximity to each other. be able to. In addition, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is carried into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.
Further, the drive unit is in a third position where the mounting unit is above the first position and below the second position when the gas in the processing chamber is discharged by the first exhaust unit. Move the mounting part so that. In this case, since the spaces above and below the mounting portion at the third position are relatively large, oxygen is unlikely to stagnate. Therefore, oxygen can be efficiently discharged.

( 16 ) The substrate processing method according to the sixth invention includes a step of forming a film on the substrate by applying a treatment liquid to the surface to be treated of the substrate by the coating processing section, and a substrate on which the film is formed by the coating processing section. The step of heat-treating the substrate by the heat treatment unit, the exposure method according to the fourth or fifth invention for exposing the substrate heat-treated by the heat treatment unit by the exposure apparatus, and the development processing unit on the surface to be processed of the substrate exposed by the exposure apparatus. Includes the step of developing the film of the substrate by supplying a solvent to the substrate.

According to this substrate processing method, the substrate after the film is formed and before the development is exposed to vacuum ultraviolet rays. In the exposure method, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting portion, and the substrate can be efficiently exposed in a state where the light projecting portion and the substrate are in close proximity to each other. can. In addition, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is carried into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.

According to the present invention, the efficiency of the exposure processing of the substrate can be improved.

It is a schematic cross-sectional view which shows the structure of the exposure apparatus which concerns on 1st Embodiment of this invention. It is the schematic which shows the change of the pressure and oxygen concentration in a processing chamber. It is a functional block diagram which shows the structure of the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure which shows the timing of control by the control part of FIG. It is a flowchart which shows the exposure processing performed by the control part of FIG. It is a schematic block diagram which shows the whole structure of the substrate processing apparatus provided with the exposure apparatus of FIG. It is a schematic diagram which shows an example of the processing of a substrate by the substrate processing apparatus of FIG. It is a schematic cross-sectional view which shows the structure of the exposure apparatus which concerns on 2nd Embodiment of this invention. It is a functional block diagram which shows the structure of the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure for demonstrating the control of each part of the exposure apparatus by the control part of FIG. It is a figure which shows the timing of control by the control part of FIG. It is a flowchart which shows the exposure processing performed by the control part of FIG.

[1] First Embodiment (1) Configuration of Exposure Device The exposure device, substrate processing apparatus, exposure method, and substrate processing method according to the embodiment of the present invention will be described below with reference to the drawings. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display device, an FPD (Flat Panel Display) substrate such as an organic EL (Electro Luminescence) display device, an optical disk substrate, a magnetic disk substrate, a photomagnetic disk substrate, and the like. A substrate for a photomask, a substrate for a solar cell, or the like.

FIG. 1 is a schematic cross-sectional view showing the configuration of an exposure apparatus according to the first embodiment of the present invention. As shown in FIG. 1, the exposure apparatus 100 includes a control unit 110, a processing chamber 120, a closing unit 130, an elevating unit 140, a light emitting unit 150, an exhaust unit 160, 170, and an air supply unit 180, 190. The control unit 110 acquires measured values from the pressure meter s1, the oxygen concentration meter s2, the ozone concentration meter s3, and the illuminance meter s4, which will be described later, and also obtains the closed unit 130, the elevating unit 140, the light emitting unit 150, and the exhaust unit 160, 170. And control the operation of the air supply units 180 and 190. The function of the control unit 110 will be described later.

The processing chamber 120 has an upper opening 121 and an internal space V1. By arranging the housing 151 of the light projecting unit 150, which will be described later, above the processing chamber 120, the upper opening 121 of the processing chamber 120 is closed. On the side surface of the processing chamber 120, a transport opening 122 for transporting the substrate W to be processed is formed between the inside and the outside of the processing chamber 120. In the present embodiment, a film containing an inductive self-assembling material (hereinafter, referred to as a DSA (Directed Self Assembly) film) is formed on the substrate W to be processed.

Further, on the bottom surface of the processing chamber 120, an opening 123 through which the connecting member 142 of the elevating portion 140, which will be described later, passes is formed. A plurality of (three in this example) support pins 124 are provided so as to surround the opening 123 so as to extend upward from the bottom surface of the processing chamber 120. The substrate W to be processed can be placed on the upper ends of the plurality of support pins 124.

The closing portion 130 includes a shutter 131, a rod-shaped connecting member 132, and a driving device 133. The connecting member 132 connects the shutter 131 and the driving device 133. The drive device 133 is, for example, a stepping motor. The drive device 133 moves the shutter 131 between an open position where the shutter 131 opens the transport opening 122 and a closed position where the shutter 131 closes the transport opening 122.

A seal member is attached to the shutter 131. When the shutter 131 is in the closed position, the inside of the processing chamber 120 is sealed by the sealing member coming into close contact with the portion surrounding the transport opening 122 in the processing chamber 120. Here, in order to prevent friction between the seal member of the shutter 131 and the processing chamber 120, the drive device 133 moves the shutter 131 from the processing chamber 120 when moving the shutter 131 between the open position and the closed position. Move it in the vertical direction while keeping it apart.

The elevating part 140 includes a flat plate-shaped mounting plate 141, a rod-shaped connecting member 142, and a driving device 143. The mounting plate 141 is arranged in a horizontal posture in the processing chamber 120. A plurality of through holes h1 corresponding to the plurality of support pins 124 are formed in the mounting plate 141.

The connecting member 142 is arranged so as to extend vertically through the opening 123 of the processing chamber 120, and the driving device 143 is arranged below the processing chamber 120. The connecting member 142 connects the mounting plate 141 and the driving device 143. A seal member is arranged between the outer peripheral surface of the connecting member 142 and the inner peripheral surface of the opening 123 so that the connecting member 142 can slide in the vertical direction.

The drive device 143 is, for example, a stepping motor that moves the mounting plate 141 between a processing position, a standby position, and an exhaust position. Here, the processing position is a position above the upper ends of the plurality of support pins 124. The standby position is a position below the upper ends of the plurality of support pins 124. The exhaust position is below the processing position and above the standby position. In the state where the mounting plate 141 is in the standby position, the plurality of support pins 124 are inserted into the plurality of through holes h1, respectively. When the mounting plate 141 is in the standby position, the lower surface of the mounting plate 141 may come into contact with the bottom surface of the processing chamber 120.

By moving the mounting plate 141 to the standby position, the substrate W can be easily transferred between the inside and the outside of the processing chamber 120 without interfering with the light projecting unit 150. Further, by moving the mounting plate 141 to the processing position, when the light projecting unit 150 irradiates the substrate W with vacuum ultraviolet rays, the substrate W is efficiently placed in a state where the light projecting unit 150 and the substrate W are in close proximity to each other. Can be exposed. The details of the exhaust position will be described later.

The light projecting unit 150 includes a housing 151 having a lower opening h2 and an internal space V2, a light transmitting plate 152, a planar light source unit 153, and a power supply device 154. In the present embodiment, the translucent plate 152 is a quartz glass plate. As the material of the light transmitting plate 152, another material that transmits vacuum ultraviolet rays, which will be described later, may be used. As described above, the housing 151 is arranged above the processing chamber 120 so as to close the upper opening 121 of the processing chamber 120. The translucent plate 152 is attached to the housing 151 so as to close the lower opening h2 of the housing 151. The internal space V1 of the processing chamber 120 and the internal space V2 of the housing 151 are optically accessiblely separated by a light transmitting plate 152.

The light source unit 153 and the power supply device 154 are housed in the housing 151. In the present embodiment, the light source unit 153 is configured by horizontally arranging a plurality of rod-shaped light source elements that emit vacuum ultraviolet rays having a wavelength of about 120 nm or more and about 230 nm or less at predetermined intervals. Each light source element may be, for example, a xenon excimer lamp, another excimer lamp, a deuterium lamp, or the like. The light source unit 153 emits vacuum ultraviolet rays having a substantially uniform light amount distribution into the processing chamber 120 through the light transmitting plate 152. The area of the emission surface of the vacuum ultraviolet rays in the light source unit 153 is larger than the area of the surface to be processed of the substrate W. The power supply device 154 supplies electric power to the light source unit 153.

The exhaust unit 160 includes a pipe p1, valves v1 and v2, and a suction device c1. The pipe p1 includes main pipes a1 and a2 and branch pipes b1 and b2. The branch pipes b1 and b2 are arranged in parallel so as to branch between the main pipes a1 and a2 into two flow paths. The flow path of the branch pipe b1 is larger than the flow path of the branch pipe b2. Valves v1 and v2 are inserted into the branch pipes b1 and b2, respectively.

The main pipe a1 is connected to the exhaust port 125 of the processing chamber 120. Here, the exhaust port 125 of the processing chamber 120 is formed below the exhaust position. The main pipe a2 is connected to the exhaust equipment. A suction device c1 is inserted into the main pipe a2. The suction device c1 is, for example, an ejector. The suction device c1 discharges the gas in the processing chamber 120 through the pipe p1. By opening or closing the valves v1 and v2, the flow rate of the discharged gas is adjusted. The gas discharged by the suction device c1 is detoxified by the exhaust equipment.

The exhaust unit 170 includes a pipe p2, valves v3 and v4, and a suction device c2. The pipe p2 includes main pipes a3 and a4 and branch pipes b3 and b4. The branch pipes b3 and b4 are arranged in parallel so as to branch between the main pipes a3 and a4 into two flow paths. The flow path of the branch pipe b3 is larger than the flow path of the branch pipe b4. Valves v3 and v4 are inserted into the branch pipes b3 and b4, respectively.

The main pipe a3 is connected to the exhaust port 155 of the housing 151. The main pipe a4 is connected to the above exhaust equipment. A suction device c2 is inserted into the main pipe a4. The suction device c2 discharges the gas in the housing 151 through the pipe p2. By opening or closing the valves v3 and v4, the flow rate of the discharged gas is adjusted. The gas discharged by the suction device c2 is detoxified by the exhaust equipment.

The air supply unit 180 includes a pipe p3 and two valves v5 and v6. The pipe p3 includes main pipes a5 and a6 and branch pipes b5 and b6. The branch pipes b5 and b6 are arranged in parallel so as to branch into two flow paths between the main pipe a5 and the main pipe a6. The flow path of the branch pipe b5 is larger than the flow path of the branch pipe b6. Valves v5 and v6 are inserted into the branch pipes b5 and b6, respectively.

The main pipe a5 is connected to the air supply port 126 of the processing chamber 120. Here, the air supply port 126 of the processing chamber 120 is formed above the exhaust position. The main pipe a6 is connected to the inert gas supply source. The inert gas is supplied from the inert gas supply source into the processing chamber 120 through the pipe p3. By opening or closing the valves v5 and v6, the flow rate of the inert gas supplied into the processing chamber 120 is adjusted. In this embodiment, nitrogen gas is used as the inert gas.

The air supply unit 190 includes a pipe p4 and two valves v7 and v8. The pipe p4 includes main pipes a7 and a8 and branch pipes b7 and b8. The branch pipes b7 and b8 are arranged in parallel so as to branch into two flow paths between the main pipe a7 and the main pipe a8. The flow path of the branch pipe b7 is larger than the flow path of the branch pipe b8. Valves v7 and v8 are inserted into the branch pipes b7 and b8, respectively.

The main pipe a7 is connected to the air supply port 156 of the housing 151. The main pipe a8 is connected to the above-mentioned inert gas supply source. The inert gas is supplied from the inert gas supply source into the housing 151 through the pipe p4. By opening or closing the valves v7 and v8, the flow rate of the inert gas supplied into the housing 151 is adjusted.

A pressure meter s1, an oxygen concentration meter s2, an ozone concentration meter s3, and an illuminance meter s4 are provided in the processing chamber 120. The pressure meter s1, the oxygen concentration meter s2, the ozone concentration meter s3, and the illuminance meter s4 are connected to the control unit 110 through the connection ports P1, P2, P3, and P4 provided in the processing chamber 120, respectively. The pressure gauge s1 measures the pressure in the processing chamber 120. The oxygen concentration meter s2 is, for example, a galvanic cell type oxygen sensor or a zirconia type oxygen sensor, and measures the oxygen concentration in the gas in the processing chamber 120.

The ozone concentration meter s3 measures the ozone concentration in the gas in the processing chamber 120. The illuminometer s4 includes a light receiving element such as a photodiode, and measures the illuminance of vacuum ultraviolet rays from the light source unit 153 that irradiates the light receiving surface of the light receiving element. Here, the illuminance is the power of the vacuum ultraviolet rays irradiated per unit area of the light receiving surface. The unit of illuminance is represented by, for example, "W / m ^2".

(2) Schematic operation of the exposure apparatus In the exposure apparatus 100, the substrate W is sequentially carried into the processing chamber 120, and the exposure processing is performed by irradiating the substrate W with vacuum ultraviolet rays from the light source unit 153 through the light transmitting plate 152. It is said. However, when the oxygen concentration in the gas in the processing chamber 120 and the housing 151 is high, the oxygen molecules absorb the vacuum ultraviolet rays and separate into oxygen atoms, and the separated oxygen atoms recombine with other oxygen molecules. Generates ozone. In this case, the vacuum ultraviolet rays reaching the substrate W are attenuated. The attenuation of vacuum ultraviolet light is greater than the attenuation of ultraviolet light having wavelengths longer than about 230 nm.

Therefore, in the exposure process, the gas in the processing chamber 120 is replaced with the inert gas by the exhaust unit 160 and the air supply unit 180. Further, the gas in the housing 151 is replaced with the inert gas by the exhaust unit 170 and the air supply unit 190. As a result, the oxygen concentration in the gas in the processing chamber 120 and the housing 151 is reduced. When the oxygen concentration measured by the oxygen concentration meter s2 is reduced to a predetermined concentration (for example, 100 ppm), the light source unit 153 irradiates the substrate W with vacuum ultraviolet rays.

When the exposure amount of the vacuum ultraviolet rays irradiated to the substrate W reaches a predetermined set exposure amount, the irradiation of the vacuum ultraviolet rays is stopped and the exposure is completed. Here, the exposure amount is the energy of vacuum ultraviolet rays irradiated per unit area of the surface to be processed of the substrate W during the exposure process. The unit of the exposure amount is represented by, for example, "J / m ^2". Therefore, the exposure amount of the vacuum ultraviolet rays is acquired by integrating the illuminance of the vacuum ultraviolet rays measured by the illuminometer s4.

In the exposure apparatus 100, since the housing 151 is sealed except during maintenance, the inside of the housing 151 can always be maintained in the atmosphere of an inert gas. On the other hand, in the processing chamber 120, the transport opening 122 is opened each time the substrate W is carried in and out, and the sealing is released. Therefore, the inside of the processing chamber 120 cannot always be maintained in the atmosphere of the inert gas, and it is necessary to replace the gas in the processing chamber 120 with the inert gas for each exposure treatment of the substrate W. If this replacement takes a long time, the efficiency of the exposure process of the substrate W decreases.

In the present embodiment, when the gas in the processing chamber 120 is replaced with the inert gas, the gas in the processing chamber 120 is discharged by the exhaust unit 160. After the oxygen concentration is lowered to a certain value or less by discharging the gas for a certain period of time, the inert gas is supplied into the processing chamber 120 by the air supply unit 180 while continuing the discharge of the gas.

In this case, the oxygen in the processing chamber 120 is discharged together with the other gas before the supply of the inert gas. As a result, the pressure in the processing chamber 120 decreases and the amount of oxygen in the processing chamber 120 decreases in a short time. After that, the inert gas is supplied into the processing chamber 120, and a small amount of oxygen remaining in the processing chamber 120 is discharged together with the inert gas. Therefore, the oxygen concentration in the gas in the processing chamber 120 can be reduced in a short time.

FIG. 2 is a schematic view showing changes in pressure and oxygen concentration in the processing chamber 120. In FIG. 2, the horizontal axis represents time and the vertical axis represents pressure and oxygen concentration in the processing chamber 120. In addition, the change in pressure (the amount of change from atmospheric pressure) is shown by the solid line, and the change in oxygen concentration is shown by the alternate long and short dash line. As shown in FIG. 2, at the initial stage, the inside of the processing chamber 120 is maintained at atmospheric pressure. Further, the oxygen concentration in the gas in the processing chamber 120 is about 2 × ¹⁰ 5 ppm.

First, the mounting plate 141 is moved to the exhaust position, and the valve v1 of the exhaust unit 160 is opened. As a result, the gas in the processing chamber 120 is discharged, and as shown in FIG. 2, the pressure in the processing chamber 120 drops to a value about 30 kPa lower than the atmospheric pressure (time point T1). Next, at the time point T1, the valve v5 of the air supply unit 180 is opened. As a result, the inert gas is supplied into the processing chamber 120, and the pressure in the processing chamber 120 rises to a value about 10 kPa lower than the atmospheric pressure while the oxygen concentration in the gas in the processing chamber 120 decreases.

Subsequently, at the time point T2, the valve v1 of the exhaust unit 160 is closed. As a result, the discharge of the gas in the processing chamber 120 is stopped, the oxygen concentration in the gas in the processing chamber 120 is further reduced, and the pressure in the processing chamber 120 rises to a value several kPa higher than the atmospheric pressure. Then, at time point T3, the oxygen concentration in the gas in the treatment chamber 120 drops to 100 ppm. In this case, the mounting plate 141 is moved to the processing position. At this time, as will be described later, the substrate W is placed close to the translucent plate 152 in a state of being mounted on the mounting plate 141. Here, the substrate W is irradiated with vacuum ultraviolet rays from the light source unit 153 through the light transmitting plate 152.

At the time point T4, the exposure amount of the vacuum ultraviolet rays applied to the substrate W reaches the set exposure amount. As a result, the emission of the vacuum ultraviolet rays from the light source unit 153 is stopped, and the mounting plate 141 is moved to the standby position. Further, by opening the transport opening 122, the pressure in the processing chamber 120 is returned to the atmospheric pressure.

According to the above replacement procedure, the gas in the processing chamber 120 can be replaced with the inert gas with high efficiency. However, since the pressure in the processing chamber 120 becomes lower than the pressure in the housing 151 for a certain period of time, stress due to the pressure difference is generated in the light transmitting plate 152 provided between the processing chamber 120 and the housing 151. In this case, the life of the light transmitting plate 152 is shortened.

In the present embodiment, when the gas in the processing chamber 120 is replaced with the inert gas, the pressure in the processing chamber 120 and the pressure in the housing 151 match, or the pressure difference is greater than a constant value. The pressure in the housing 151 is controlled so that it becomes smaller. In this case, stress is prevented from being generated in the light transmitting plate 152. As a result, the life of the light transmitting plate 152 can be extended. Further, since it is not necessary to increase the thickness of the light transmitting plate 152, the transmittance of the light transmitting plate 152 is improved. As a result, the efficiency of the exposure processing of the substrate W can be improved.

(3) Control unit FIG. 3 is a functional block diagram showing the configuration of the control unit 110 of FIG. As shown in FIG. 3, the control unit 110 includes an oxygen concentration acquisition unit A , an exhaust control unit B and C, an air supply control unit D and E, an open / close control unit F, an elevating control unit G, an illuminance acquisition unit H, and an exposure amount. The calculation unit I and the light projection control unit J are included. The control unit 110 is composed of, for example, a CPU (Central Processing Unit) and a memory. The control program is stored in advance in the memory of the control unit 110. When the CPU of the control unit 110 executes the control program stored in the memory, the functions of each unit of the control unit 110 are realized.

The oxygen concentration acquisition unit A acquires the oxygen concentration in the gas in the processing chamber 120 based on the measured value of the oxygen concentration meter s2 of FIG. As described above, in the present embodiment, since the gas in the processing chamber 120 is discharged for a certain period of time before the inert gas is supplied, the pressure in the processing chamber 120 becomes lower than the atmospheric pressure. .. In this state, when the oxygen concentration cannot be measured by the oxygen concentration meter s2, the oxygen concentration acquisition unit A is in the gas in the processing chamber 120 based on the measured value of the pressure gauge s1 of FIG. 1 instead of the oxygen concentration meter s2. Oxygen concentration may be obtained.

The exhaust control unit B controls the operation of the valves v1 and v2 of the exhaust unit 160 of FIG. The exhaust control unit C controls the operation of the valves v3 and v4 of the exhaust unit 170 of FIG. The air supply control unit D controls the operation of the valves v5 and v6 of the air supply unit 180 of FIG. The air supply control unit E controls the operations of the valves v7 and v8 of the air supply unit 190 of FIG. The open / close control unit F controls the operation of the drive device 133 so that the shutter 131 of FIG. 1 moves between the closed position and the open position. The elevating control unit G controls the operation of the drive device 143 so that the mounting plate 141 of FIG. 1 moves between the standby position, the exhaust position, and the processing position.

The illuminance acquisition unit H acquires the value of the illuminance of the vacuum ultraviolet rays measured by the illuminance meter s4 of FIG. The exposure amount calculation unit I calculates the exposure amount of the vacuum ultraviolet rays irradiated to the substrate W based on the illuminance of the vacuum ultraviolet rays acquired by the illuminance acquisition unit H and the emission time of the vacuum ultraviolet rays by the light source unit 153 of FIG. do.

The projection control unit J switches between emitting and stopping the emission of vacuum ultraviolet rays from the light source unit 153 based on the oxygen concentration acquired by the oxygen concentration acquisition unit A and the exposure amount calculated by the exposure amount calculation unit I. The operation of the power supply device 154 of FIG. 1 is controlled. In the following description, the state in which the light source unit 153 emits vacuum ultraviolet rays is referred to as an emission state, and the state in which the light source unit 153 stops emitting vacuum ultraviolet rays is referred to as a stop state.

4 to 9 are diagrams for explaining control of each part of the exposure apparatus 100 by the control unit 110 of FIG. In FIGS. 4 to 9, in order to facilitate understanding of the configurations inside the processing chamber 120 and the housing 151, some of the components are omitted and the contours of the processing chamber 120 and the housing 151 are provided at one point. It is indicated by a chain line. In addition, the flow of a small amount of inert gas or gas supplied or discharged is indicated by a thin arrow, and the flow of a large amount of inert gas or gas supplied or discharged is indicated by a thick arrow.

FIG. 10 is a diagram showing the timing of control by the control unit 110 of FIG. 10 (a) to 10 (d) show the timing of switching the operation of the valves v1 to v8 in the exhaust unit 160, the exhaust unit 170, the air supply unit 180, and the air supply unit 190. Here, "v1 open" to "v8 open" in FIGS. 10A to 10D mean that the valves v1 to v8 are opened, respectively. “Closed” in FIGS. 10 (a) to 10 (d) means that the set of valves v1 and v2, the set of valves v3 and v4, the set of valves v5 and v6, and the set of valves v7 and v8 are closed, respectively. do.

FIG. 10E shows the timing of movement of the shutter 131 between the open position and the closed position. FIG. 10 (f) shows the timing of movement of the mounting plate 141 between the standby position, the exhaust position, and the processing position. FIG. 10 (g) shows the timing of switching between the emission state and the stop state of the light source unit 153. FIG. 10 (h) shows a schematic change in pressure in the processing chamber 120 and in the housing 151. The change in pressure in the processing chamber 120 and the change in pressure in the housing 151 are substantially the same.

Hereinafter, the exposure process by the control unit 110 will be described with reference to FIGS. 4 to 10. The pressure and oxygen concentration in the processing chamber 120 are measured constantly or periodically by the pressure gauge s1 and the oxygen concentration gauge s2 of FIG. 1, respectively. As a result, the oxygen concentration in the gas in the processing chamber 120 is constantly or periodically acquired by the oxygen concentration acquisition unit A in FIG.

As an initial state, at time point t1, as shown in FIG. 4, the shutter 131 is in the open position, the mounting plate 141 is in the standby position, and the light source unit 153 is in the stopped state. As a result, the substrate W to be processed can be placed on the upper ends of the plurality of support pins 124 through the transport opening 122. In this state, the valves v1 and v2 of the exhaust unit 160 are closed, the valve v6 of the air supply unit 180 is opened, the valve v4 of the exhaust unit 170 is opened, and the valve v8 of the air supply unit 190 is opened.

In this case, the air supply unit 180 supplies a small amount of the inert gas into the processing chamber 120, but since the transport opening 122 is open, the inside of the processing chamber 120 is maintained at atmospheric pressure P0, and the inside of the processing chamber 120 is maintained. The oxygen concentration in the gas is equal to the oxygen concentration in the atmosphere. Further, the air supply unit 190 supplies a small amount of inert gas into the housing 151, and the exhaust unit 170 discharges a small amount of gas in the housing 151, so that the inside of the housing 151 is maintained at atmospheric pressure P0, and the housing is housed. The gas in 151 is maintained as an inert gas.

Next, as shown in FIG. 5, the substrate W is placed on the upper ends of the plurality of support pins 124 by the transport device 220 of FIG. 12, which will be described later. Then, at time point t2, as shown in FIG. 6, the shutter 131 is moved to the closed position, and the mounting plate 141 is moved to the exhaust position. Further, the valves v1 of the exhaust unit 160 are opened, the valves v5 and v6 of the air supply unit 180 are closed, the valves v3 of the exhaust unit 170 are opened, and the valves v7 and v8 of the air supply unit 190 are closed.

In this case, the exhaust unit 160 discharges a large amount of gas in the processing chamber 120 while the transport opening 122 is closed and the supply of the inert gas from the air supply unit 180 into the processing chamber 120 is stopped. Therefore, the oxygen in the processing chamber 120 is discharged to the outside of the processing chamber 120 together with other gases, so that the amount of oxygen decreases in a short time. Further, a large amount of gas in the housing 151 is discharged by the exhaust unit 170. As a result, the pressure in the processing chamber 120 and the housing 151 drops to a value Pa lower than the atmospheric pressure P0.

When the mounting plate 141 is moved to the exhaust position, a narrow gap may be formed between the mounting plate 141 and the bottom surface of the processing chamber 120, and between the mounting plate 141 and the translucent plate 152. Be prevented. As described above, since the spaces above and below the mounting plate 141 at the exhaust position are relatively large, oxygen is unlikely to stagnate. Therefore, oxygen can be efficiently discharged. In the example of FIG. 6, the substrate W is not mounted on the mounting plate 141 at the exhaust position, but the present invention is not limited to this. The substrate W may be mounted on the mounting plate 141 at the exhaust position.

Further, in the present embodiment, the exhaust port of the main pipe a1 of the exhaust unit 160 (the portion connected to the exhaust port 125 of the processing chamber 120 of FIG. 1) is arranged below the exhaust position. Further, the air supply port of the main pipe a5 in the air supply unit 180 (the portion connected to the air supply port 126 of the processing chamber 120 in FIG. 1) is arranged above the exhaust position. Here, it is more preferable that the exhaust port of the main pipe a1 and the air supply port of the main pipe a5 are arranged so as to sandwich the exhaust position as in the present embodiment.

According to this arrangement, the inert gas is directly supplied to the space above the mounting plate 141 at the exhaust position. Further, a flow of the inert gas is formed along the space around the mounting plate 141 at the exhaust position. As a result, oxygen can be efficiently discharged, and oxygen between the mounting plate 141 and the light projecting unit 150 can be discharged more efficiently. As a result, the exposure of the substrate W can be started in a short time.

After a certain period of time, at time point t3, as shown in FIG. 7, the valve v5 of the air supply unit 180 is opened, and the valve v7 of the air supply unit 190 is opened. In this case, the air supply unit 180 supplies a large amount of the inert gas into the processing chamber 120. Therefore, a small amount of oxygen remaining in the processing chamber 120 is discharged to the outside of the processing chamber 120 together with the inert gas. Therefore, the oxygen concentration in the gas in the processing chamber 120 decreases in a short time. Further, a large amount of the inert gas is supplied into the housing 151 by the air supply unit 190. As a result, the pressure in the processing chamber 120 and the housing 151 rises to a value Pb higher than the value Pa and lower than the atmospheric pressure P0.

Subsequently, at time point t4, as shown in FIG. 8, the valves v1 and v2 of the exhaust unit 160 are closed, and the valves v3 and v4 of the exhaust unit 170 are closed. In this case, the air supply unit 180 supplies a larger amount of the inert gas into the processing chamber 120, and the air supply unit 190 supplies a larger amount of the inert gas into the housing 151. As a result, the pressure in the processing chamber 120 and the housing 151 rises to a value Pc higher than the atmospheric pressure P0, and the oxygen concentration in the gas in the processing chamber 120 continues to decrease.

At time point t5, the oxygen concentration in the gas in the treatment chamber 120 drops to a certain value (for example, 100 ppm) or less. As a result, as shown in FIG. 9, the mounting plate 141 moves to the processing position, and the light source unit 153 is in the emission state. In this case, the substrate W is delivered from the plurality of support pins 124 to the mounting plate 141 and is brought close to the light transmitting plate 152. In this state, the substrate W is irradiated with vacuum ultraviolet rays from the light source unit 153 through the light transmitting plate 152, and the DSA film formed on the surface to be treated is exposed.

At the time point t6, the exposure amount of the vacuum ultraviolet rays applied to the substrate W reaches the set exposure amount. As a result, the light source unit 153 is stopped, the mounting plate 141 is moved to the standby position, and the shutter 131 is moved to the open position, as in the initial state of FIG. Further, the valve v6 of the air supply unit 180 is opened, the valve v4 of the exhaust unit 170 is opened, and the valve v8 of the air supply unit 190 is opened.

In this case, the inside of the processing chamber 120 and the inside of the housing 151 are maintained at atmospheric pressure P0, and the oxygen concentration in the gas in the processing chamber 120 becomes equal to the oxygen concentration in the atmosphere. Further, the exposed substrate W is delivered from the mounting plate 141 to the plurality of support pins 124. In this example, the substrate W is carried out from the plurality of support pins 124 to the outside of the processing chamber 120 by the transport device 220 of FIG. 12, which will be described later.

(4) Exposure Process FIG. 11 is a flowchart showing an exposure process performed by the control unit 110 of FIG. Hereinafter, the exposure process will be described with reference to FIGS. 1 and 3. First, the open / close control unit F moves the shutter 131 to the open position (step S1). As a result, the substrate W to be processed can be placed on the upper ends of the plurality of support pins 124 through the transport opening 122. Further, the elevating control unit G moves the mounting plate 141 to the standby position (step S2). The projection control unit J switches the light source unit 153 to the stopped state (step S3).

Next, the exhaust control unit B closes the valves v1 and v2 of the exhaust unit 160 (step S4). The exhaust control unit C opens the valve v4 of the exhaust unit 170 (step S5). The air supply control unit D opens the valve v6 of the air supply unit 180 (step S6). The air supply control unit E opens the valve v8 of the air supply unit 190 (step S7). Steps S1 to S7 are processes for initializing the exposure apparatus 100, and any of them may be executed first or may be executed at the same time. In particular, steps S4 to S7 are preferably executed at the same time.

In addition, "simultaneous execution" in the present embodiment means not only that a plurality of processes are executed at completely the same time point, but also that they are sequentially executed within a period of about several seconds, or a delay time of about several seconds. Includes being performed with. The same applies to the following description.

Subsequently, the open / close control unit F determines whether or not the substrate W has been carried into the processing chamber 120 (step S8). Whether or not the substrate W has been carried into the processing chamber 120 is determined by detecting, for example, whether or not the holding portion of the substrate W in the transport device 220 of FIG. 12, which will be described later, has passed through the transport opening 122 with a photoelectric sensor or the like. Will be done. When the substrate W is not carried in, the open / close control unit F waits until the substrate W is carried into the processing chamber 120.

When the substrate W is carried into the processing chamber 120, the open / close control unit F moves the shutter 131 to the closed position (step S9). Further, the elevating control unit G moves the mounting plate 141 to the exhaust position (step S10). The exhaust control unit B opens the valve v1 of the exhaust unit 160 (step S11). The exhaust control unit C opens the valve v3 of the exhaust unit 170 (step S12). The air supply control unit D closes the valves v5 and v6 of the air supply unit 180 (step S13). The air supply control unit E closes the valves v7 and v8 of the air supply unit 190 (step S14). Either of steps S9 to S14 may be executed first, or may be executed at the same time. In particular, steps S11 to S14 are preferably executed at the same time.

After that, the air supply control unit D determines whether or not a certain time has elapsed (step S15). If the fixed time has not elapsed, the air supply control unit D waits until the fixed time elapses. When a certain period of time has elapsed, the air supply control unit D opens the valve v5 of the air supply unit 180 (step S16). Further, the air supply control unit E opens the valve v7 of the air supply unit 190 (step S17). Either of steps S16 and S17 may be executed first, but it is preferable that steps S16 and S17 are executed at the same time.

Next, the exhaust control unit B determines whether or not a certain time has elapsed (step S18). If a certain time has not passed, the exhaust control unit B waits until a certain time has passed. When a certain period of time has elapsed, the exhaust control unit B closes the valves v1 and v2 of the exhaust unit 160 (step S19). Further, the exhaust control unit C closes the valves v3 and v4 of the exhaust unit 170 (step S20). Either of steps S19 and S20 may be executed first, but it is preferable that steps S19 and S20 are executed at the same time.

Subsequently, the elevating control unit G determines whether or not the oxygen concentration in the gas in the processing chamber 120 has dropped to a certain value or less (step S21). If the oxygen concentration has not dropped to a certain value or less, the elevating control unit G waits until the oxygen concentration drops to a certain value or less. When the oxygen concentration drops below a certain value, the elevating control unit G moves the mounting plate 141 to the processing position (step S22). Further, the light projection control unit J switches the light source unit 153 to the emission state (step S23). Either of steps S22 and S23 may be executed first, or may be executed at the same time.

After that, the exposure amount calculation unit I determines whether or not the exposure amount of the substrate W has reached the set exposure amount (step S24). If the exposure amount has not reached the set exposure amount, the exposure amount calculation unit I waits until the exposure amount reaches the set exposure amount. When the exposure amount reaches the set exposure amount, the exposure amount calculation unit I returns to step S1. As a result, steps S1 to S24 are repeated. As a result, the exposure process is sequentially performed on the plurality of substrates W.

(5) Substrate Processing Device FIG. 12 is a schematic block diagram showing the overall configuration of the substrate processing device provided with the exposure device 100 of FIG. In the substrate processing apparatus 200 described below, processing using inductive self-assembly (DSA) of block copolymers is performed. Specifically, a treatment liquid containing an inductive self-assembling material is applied onto the surface to be treated of the substrate W. After that, a pattern of two kinds of polymers is formed on the surface to be treated of the substrate W by the microphase separation generated in the induced self-assembling material. The pattern of one of the two polymers is removed by the solvent.

The treatment liquid containing the inductive self-assembling material is called a DSA liquid. Further, a process of removing one of two types of polymer patterns formed on the surface to be processed of the substrate W by microphase separation is called a developing process, and a solvent used in the developing process is called a developing solution.

As shown in FIG. 12, the substrate processing device 200 includes a control device 210, a transfer device 220, a heat treatment device 230, a coating device 240, and a developing device 250 in addition to the exposure device 100. The control device 210 includes, for example, a CPU and a memory, or a microcomputer, and controls the operations of the transfer device 220, the heat treatment device 230, the coating device 240, and the developing device 250. Further, the control device 210 issues commands for controlling the operations of the closing portion 130, the elevating portion 140, the light emitting portion 150, the exhaust portions 160, 170, and the air supply portions 180, 190 of the exposure apparatus 100 of FIG. Give to 110.

The transport device 220 transports the substrate W to be processed between the exposure device 100, the heat treatment device 230, the coating device 240, and the developing device 250 while holding the substrate W to be processed. The heat treatment device 230 heat-treats the substrate W before and after the coating process by the coating device 240 and the developing process by the developing device 250.

The coating device 240 coats the film by supplying the DSA liquid to the surface to be treated of the substrate W. In the present embodiment, a block copolymer composed of two types of polymers is used as the DSA liquid. As a combination of the two polymers, for example, polystyrene-polymethylmethacrylate (PS-PMMA), polystyrene-polydimethylsiloxane (PS-PDMS), polystyrene-polyferrocenyldimethylsilane (PS-PFS), polystyrene-polyethylene oxide (PS-PEO), polystyrene-polyvinylpyridine (PS-PVP), polystyrene-polyhydroxystyrene (PS-PHOST), polymethylmethacrylate-polymethacrylate polyhedral oligomeric silsesquioxane (PMMA-PMAPOSS), etc. Can be mentioned.

The developing apparatus 250 develops the film by supplying a developing solution to the surface to be processed of the substrate W. As the solvent of the developing solution, for example, toluene, heptane, acetone, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, acetic acid, tetrahydrofuran, isopropyl alcohol (IPA) or tetramethylammonium hydroxide (TMAH). ) Etc. can be mentioned.

FIG. 13 is a schematic view showing an example of processing of the substrate W by the substrate processing apparatus 200 of FIG. In FIG. 13, a cross-sectional view shows a state of the substrate W that changes each time the process is performed. In this example, as an initial state before the substrate W is carried into the substrate processing apparatus 200, as shown in FIG. 13A, the underlayer L1 is formed so as to cover the surface to be processed of the substrate W, and the underlayer is formed. A guide pattern L2 made of, for example, a photoresist is formed on L1. Hereinafter, the operation of the substrate processing apparatus 200 will be described with reference to FIGS. 12 and 13.

The transport device 220 sequentially transports the substrate W to be processed to the heat treatment device 230 and the coating device 240. In this case, in the heat treatment apparatus 230, the temperature of the substrate W is adjusted to a temperature suitable for forming the DSA film L3. Further, in the coating device 240, the DSA liquid is supplied to the surface to be treated of the substrate W, and the coating process is performed. As a result, as shown in FIG. 13B, a DSA film L3 composed of two types of polymers is formed in a region on the base layer L1 on which the guide pattern L2 is not formed.

Next, the transfer device 220 transfers the substrate W on which the DSA film L3 is formed to the heat treatment device 230 and the exposure device 100 in this order. In this case, the heat treatment apparatus 230 heat-treats the substrate W to cause microphase separation in the DSA film L3. As a result, as shown in FIG. 13 (c), a pattern Q1 composed of one polymer and a pattern Q2 composed of the other polymer are formed. In this example, the linear pattern Q1 and the linear pattern Q2 are directionally formed along the guide pattern L2.

After that, the substrate W is cooled in the heat treatment apparatus 230. Further, in the exposure apparatus 100, the entire DSA film L3 after the microphase separation is irradiated with vacuum ultraviolet rays for modifying the DSA film L3, and the exposure process is performed. As a result, the bond between one polymer and the other polymer is broken, and the pattern Q1 and the pattern Q2 are separated.

Subsequently, the transport device 220 transports the substrate W after the exposure process by the exposure device 100 to the heat treatment device 230 and the developing device 250 in this order. In this case, the substrate W is cooled in the heat treatment apparatus 230. Further, in the developing apparatus 250, the developing solution is supplied to the DSA film L3 on the substrate W, and the developing process is performed. As a result, as shown in FIG. 13D, the pattern Q1 is removed, and finally the pattern Q2 remains on the substrate W. Finally, the transport device 220 collects the developed substrate W from the developing device 250.

(6) Effect In the exposure apparatus 100 according to the present embodiment, the supply of the inert gas into the processing chamber 120 is started after a certain period of time has elapsed from the start of the discharge of the gas in the processing chamber 120. NS. In this case, oxygen in the processing chamber 120 is discharged to the outside of the processing chamber 120 together with other gases before the supply of the inert gas. As a result, the pressure in the processing chamber 120 decreases and the amount of oxygen decreases. After that, the inert gas is supplied into the processing chamber 120, and a small amount of oxygen remaining in the processing chamber 120 is discharged to the outside of the processing chamber 120 together with the inert gas. Therefore, the oxygen concentration in the gas in the processing chamber 120 decreases in a short time after the substrate W is carried into the processing chamber 120. Therefore, the exposure of the substrate W can be started in a short time from the delivery of the substrate W. As a result, the efficiency of the exposure processing of the substrate W can be improved.

Further, after a certain period of time has elapsed from the start of the supply of the inert gas into the processing chamber 120, the discharge of the gas in the processing chamber 120 is stopped. In this case, the inert gas is further supplied into the processing chamber 120 with the discharge of the gas in the processing chamber 120 stopped. As a result, the oxygen concentration in the gas in the processing chamber 120 can be further reduced, and the generation of ozone can be prevented more efficiently.

[2] Second Embodiment The exposure apparatus and substrate processing apparatus according to the second embodiment will be described as being different from the exposure apparatus and substrate processing apparatus according to the first embodiment. FIG. 14 is a schematic cross-sectional view showing the configuration of the exposure apparatus according to the second embodiment of the present invention. As shown in FIG. 14, the exposure apparatus 100 further includes a connecting tube 101 that connects the processing chamber 120 and the housing 151. A valve v9 is inserted in the connecting pipe 101.

FIG. 15 is a functional block diagram showing the configuration of the control unit 110 of FIG. As shown in FIG. 15, the control unit 110 further includes a connection control unit K that controls the operation of the valve v9 of FIG. When the valve v9 is opened, the internal space V1 of the processing chamber 120 and the internal space V2 of the housing 151 communicate with each other through the connecting pipe 101, and the gas can move between the processing chamber 120 and the housing 151. ..

16 to 21 are diagrams for explaining control of each part of the exposure apparatus 100 by the control unit 110 of FIG. FIG. 22 is a diagram showing the timing of control by the control unit 110 of FIG. FIG. 22 (i) shows the timing of switching the operation of the valve v9 in the connecting pipe 101. Hereinafter, the exposure process by the control unit 110 in the present embodiment will be described with reference to FIGS. 16 to 22.

The control timing of the exhaust unit 160, the air supply unit 180, the shutter 131, the mounting plate 141, and the light source unit 153 in FIG. 22 is the exhaust unit 160, the air supply unit 180, the shutter 131, and the mounting plate 141 in FIG. The timing is the same as the control timing of the light source unit 153. Further, the change in pressure in the processing chamber 120 in FIG. 22 is the same as the change in pressure in the processing chamber 120 in FIG. On the other hand, the control timing of the exhaust unit 170 and the air supply unit 190 in FIG. 22 is different from the control timing of the exhaust unit 170 and the air supply unit 190 in FIG.

As an initial state, at time point t1, as shown in FIG. 16, the shutter 131 is in the open position, the mounting plate 141 is in the standby position, and the light source unit 153 is in the stopped state. Further, the valves v1 and v2 of the exhaust unit 160 are closed, the valve v6 of the air supply unit 180 is opened, the valve v4 of the exhaust unit 170 is opened, the valve v8 of the air supply unit 190 is opened, and the connecting pipe 101 is opened. The valve v9 is closed.

In this case, the air supply unit 180 supplies a small amount of the inert gas into the processing chamber 120, but since the transport opening 122 is open, the inside of the processing chamber 120 is maintained at atmospheric pressure P0, and the inside of the processing chamber 120 is maintained. The oxygen concentration in the gas is equal to the oxygen concentration in the atmosphere. Further, the air supply unit 190 supplies a small amount of inert gas into the housing 151, and the exhaust unit 170 discharges a small amount of gas in the housing 151, so that the inside of the housing 151 is maintained at atmospheric pressure P0, and the housing is housed. The gas in 151 is maintained as an inert gas. In this state, the valve v9 is closed so that oxygen can be easily prevented from flowing into the housing 151 through the processing chamber 120.

Next, as shown in FIG. 17, the substrate W is placed on the upper ends of the plurality of support pins 124 by the transfer device 220 of FIG. Then, at time point t2, as shown in FIG. 18, the shutter 131 is moved to the closed position, and the mounting plate 141 is moved to the exhaust position. Further, the valve v1 of the exhaust unit 160 is opened, the valves v5 and v6 of the air supply unit 180 are closed, the valves v3 and v4 of the exhaust unit 170 are closed, the valve v7 of the air supply unit 190 is opened, and the connecting pipe is opened. The valve v9 of 101 is opened.

In this case, the exhaust unit 160 discharges a large amount of gas in the processing chamber 120 while the transport opening 122 is closed and the supply of the inert gas from the air supply unit 180 into the processing chamber 120 is stopped. Therefore, the oxygen in the processing chamber 120 is discharged to the outside of the processing chamber 120 together with other gases, so that the amount of oxygen decreases in a short time. Further, the pressure in the processing chamber 120 and the housing 151 drops to a value Pa lower than the atmospheric pressure P0.

Here, the internal space of the housing 151 and the internal space of the processing chamber 120 communicate with each other through the connecting pipe 101, and the pressure in the processing chamber 120 and the pressure in the housing 151 are maintained equal to each other. Further, since the exhaust gas 170 is stopped from discharging the gas in the housing 151, a large amount of the inert gas is supplied into the housing 151, so that the gas in the housing 151 moves into the processing chamber 120. Gas does not move (backflow) from the inside of the processing chamber 120 into the housing 151. This prevents gas containing oxygen from flowing into the housing 151.

After a certain period of time, at time point t3, as shown in FIG. 19, the valve v5 of the air supply unit 180 is opened. In this case, the air supply unit 180 supplies a large amount of the inert gas into the processing chamber 120. Therefore, a small amount of oxygen remaining in the processing chamber 120 is discharged to the outside of the processing chamber 120 together with the inert gas. Therefore, the oxygen concentration in the gas in the processing chamber 120 decreases in a short time. Further, the pressure in the processing chamber 120 and the housing 151 rises to a value Pb higher than the value Pa and lower than the atmospheric pressure P0.

Subsequently, at time point t4, as shown in FIG. 20, the valves v1 and v2 of the exhaust unit 160 are closed. In this case, the air supply unit 180 supplies a larger amount of the inert gas into the processing chamber 120. As a result, the pressure in the processing chamber 120 and the housing 151 rises to a value Pc higher than the atmospheric pressure P0, and the oxygen concentration in the gas in the processing chamber 120 continues to decrease.

At time point t5, the oxygen concentration in the gas in the treatment chamber 120 drops to a certain value (for example, 100 ppm) or less. As a result, as shown in FIG. 21, the mounting plate 141 moves to the processing position, and the light source unit 153 is in the emission state. In this case, the substrate W is delivered from the plurality of support pins 124 to the mounting plate 141 and is brought close to the light transmitting plate 152. In this state, the substrate W is irradiated with vacuum ultraviolet rays from the light source unit 153 through the light transmitting plate 152, and the DSA film formed on the surface to be treated is exposed.

At the time point t6, the exposure amount of the vacuum ultraviolet rays applied to the substrate W reaches the set exposure amount. As a result, the light source unit 153 is stopped, the mounting plate 141 is moved to the standby position, and the shutter 131 is moved to the open position, as in the initial state of FIG. Further, the valve v6 of the air supply unit 180 is opened, the valve v4 of the exhaust unit 170 is opened, the valve v8 of the air supply unit 190 is opened, and the valve v9 of the connecting pipe 101 is closed.

In this case, the inside of the processing chamber 120 and the inside of the housing 151 are maintained at atmospheric pressure P0 while the communication between the internal space of the housing 151 and the internal space of the processing chamber 120 is cut off. The oxygen concentration in the gas in the processing chamber 120 is equal to the oxygen concentration in the atmosphere. Further, the exposed substrate W is delivered from the mounting plate 141 to the plurality of support pins 124. In this example, the substrate W is carried out from the plurality of support pins 124 to the outside of the processing chamber 120 by the transport device 220 of FIG. According to this configuration, the pressure in the processing chamber 120 and the pressure in the housing 151 can be matched or the pressure difference can be made smaller than a constant value by simpler control.

FIG. 23 is a flowchart showing an exposure process performed by the control unit 110 of FIG. The exposure process of FIG. 23 is different from the exposure process of FIG. 11 in the following points. Step S7a is executed between steps S7 and S8. Step S12a is executed instead of step S12. Step S14a is executed instead of step S14. Step S14b is executed between steps S14a and S15. Steps S17 and S20 are not executed.

In step S7a, the connection control unit K closes the valve v9 of the connection pipe 101. In step S12a, the exhaust control unit C closes the valves v3 and v4. In step S14a, the air supply control unit E opens the valve v7 of the air supply unit 190. In step S14b, the connection control unit K opens the valve v9 of the connection pipe 101.

Steps S1 to S7 and S7a are processes for initializing the exposure apparatus 100, and any of them may be executed first or may be executed at the same time. In particular, steps S4 to S7 and S7a are preferably executed at the same time. Any of steps S9 to S11, S12a, S13, S14a, and S14b may be executed first, or may be executed at the same time. In particular, steps S11, S12a, S13, S14a, and S14b are preferably executed at the same time.

[3] Other Embodiments (1) In the above-described embodiment, the DSA solution is used as the treatment solution, but the present invention is not limited thereto. Other treatment liquids different from the DSA liquid may be used.

(2) In the above embodiment, the emission surface of the vacuum ultraviolet rays is larger than the surface to be treated of the substrate W, and the entire surface of the substrate W is exposed, but the present invention is not limited to this. The emission surface of the vacuum ultraviolet rays may be smaller than the surface to be processed of the substrate W, or the planar vacuum ultraviolet rays may not be emitted. In this case, the emission surface of the vacuum ultraviolet rays and the surface to be treated of the substrate W are relatively moved, so that the entire surface to be treated of the substrate W is irradiated with the vacuum ultraviolet rays.

(3) In the above embodiment, the exposure of the substrate W is started when the oxygen concentration in the gas in the processing chamber 120 drops to 100 ppm, but the present invention is not limited to this. The exposure of the substrate W may be started when the oxygen concentration in the gas in the processing chamber 120 drops to a concentration higher than 100 ppm (for example, 1%).

(4) In the above embodiment, the exhaust port 125 is formed below the exhaust position and the air supply port 126 is formed above the exhaust position, but the present invention is not limited thereto. The exhaust port 125 may be formed above the exhaust position and the air supply port 126 may be formed below the exhaust position. Alternatively, both the exhaust port 125 and the air supply port 126 may be formed above the exhaust position, or both the exhaust port 125 and the air supply port 126 may be formed below the exhaust position. Therefore, the exhaust port 125 and the air supply port 126 do not have to be formed so as to sandwich the exhaust position.

(5) In the above embodiment, the mounting plate 141 is moved to the exhaust position when the gas in the processing chamber 120 is discharged, but the present invention is not limited to this. If a narrow gap is not formed around the mounting plate 141 in the standby position and oxygen is unlikely to stagnate, the mounting plate 141 is not moved to the exhaust position when the gas in the processing chamber 120 is discharged. May be good.

(6) In the above embodiment, the pressure inside the housing 151 is controlled so that the pressure inside the housing 151 matches or approaches the pressure inside the processing chamber 120, but the present invention is not limited thereto. If the translucent plate 152 has sufficient strength, the pressure in the housing 151 may not be controlled so that the pressure in the housing 151 matches or approaches the pressure in the processing chamber 120.

[4] Correspondence between Each Component of Claim and Each Element of Embodiment Hereinafter, an example of correspondence between each component of claim and each element of embodiment will be described. Not limited to the example. As each component of the claim, various other components having the structure or function described in the claim can also be used.

In the above embodiment, the light projecting unit 150 is an example of the light projecting unit, the mounting plate 141 is an example of the mounting unit, and the exhaust units 160 and 170 are examples of the first and second exhaust units, respectively. The air supply units 180 and 190 are examples of the first and second air supply units, respectively. The air supply control units D and E are examples of the first and second air supply control units, respectively, the drive device 143 is an example of the drive unit, the exhaust control unit B is an example of the exhaust control unit, and the support pin. 124 is an example of a support member.

The translucent plate 152 is an example of a window member, the connecting tube 101 is an example of a connecting portion, the coating device 240 is an example of a coating processing section, the heat treatment device 230 is an example of a heat treatment section, and the developing device 250 is an example of a heat treatment section. This is an example of the development processing unit. In the first embodiment, the exhaust unit 170, the air supply unit 190, and the air supply control unit E are examples of the pressure control unit. In the second embodiment, the connecting pipe 101 and the air supply unit 190 are examples of the pressure control unit.
[5] Reference form
(1) The exposure apparatus according to the first reference embodiment has a processing chamber for accommodating a substrate, a mounting portion on which the substrate is placed in the processing chamber, and a first exhaust for discharging gas in the processing chamber. After the gas discharge in the processing chamber is started by the unit, the first air supply unit for supplying the inert gas to the processing chamber, the light projecting unit that emits vacuum ultraviolet rays, and the first exhaust unit, in advance. A first air supply control unit that controls the first air supply unit so that the supply of the inert gas to the treatment chamber is started after the lapse of the predetermined first time, and the gas in the treatment chamber. A light projecting control unit that controls the light projecting unit to expose the substrate by irradiating the substrate in the processing chamber with vacuum ultraviolet rays in a state where the oxygen concentration of the light is reduced to a predetermined concentration, and a substrate in the processing chamber. The mounting unit is in the first position in the processing chamber when the substrate is carried in and out of the processing room, and the mounting unit is located in the first position when the light projecting unit irradiates the substrate with vacuum ultraviolet rays. Also includes a drive unit that moves the mounting unit to the first position and the second position so that the mounting unit is located at the second position close to the light projecting unit.
In this exposure apparatus, the mounting portion is moved to the first position in the processing chamber by the driving portion. In this state, the substrate is carried into the processing chamber and placed on the mounting portion. Here, the first exhaust unit starts discharging the gas in the processing chamber. After a predetermined first time has elapsed from the start of gas discharge, the first air supply unit starts supplying the inert gas to the treatment chamber. In this case, the gas in the treatment chamber is replaced with the inert gas, and the oxygen concentration decreases.
When the oxygen concentration in the gas in the processing chamber drops to a predetermined concentration, the driving unit moves the mounting unit to a second position closer to the light projecting unit than the first position. In addition, the light projecting unit irradiates the substrate in the processing chamber with vacuum ultraviolet rays. As a result, the substrate is exposed with almost no ozone generation. After that, the mounting portion is moved to the first position by the driving unit, and the substrate is carried out from the processing chamber.
According to this configuration, by moving the mounting portion to the first position, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting portion. Further, when the light projecting portion irradiates the substrate with vacuum ultraviolet rays, the mounting portion moves to the second position, so that the substrate is efficiently exposed in a state where the light projecting portion and the substrate are close to each other. Can be done.
Further, after the first time has elapsed since the discharge of the gas in the treatment chamber was started, the supply of the inert gas to the treatment chamber is started. In this case, oxygen in the treatment chamber is discharged to the outside of the treatment chamber together with other gases before the supply of the inert gas. As a result, the pressure in the treatment chamber is reduced and the amount of oxygen is reduced. After that, the inert gas is supplied to the treatment chamber, and a small amount of oxygen remaining in the treatment chamber is discharged to the outside of the treatment chamber together with the inert gas. Therefore, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is brought into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.
(2) In the exposure apparatus, the exhaust of the gas in the processing chamber is stopped after a predetermined second time has elapsed from the start of the supply of the inert gas to the processing chamber by the first air supply unit. An exhaust control unit that controls the first exhaust unit may be further provided. In this case, the inert gas is further supplied to the treatment chamber in a state where the discharge of the gas in the treatment chamber is stopped. As a result, the oxygen concentration in the gas in the treatment chamber can be further reduced, and the generation of ozone can be prevented more efficiently.
(3) The light projecting unit is arranged above the mounting unit, emits vacuum ultraviolet rays downward, the second position is below the light projecting unit, and the first position is below the second position. Yes, the drive unit may raise and lower the mounting unit between the first position and the second position. In this case, the substrate can be efficiently transferred between the processing chamber and the outside.
(4) When the gas in the processing chamber is discharged by the first exhaust unit, the drive unit is placed in a third position where the mounting unit is above the first position and below the second position. The mounting portion may be moved as it is. In this case, since the spaces above and below the mounting portion at the third position are relatively large, oxygen is unlikely to stagnate. Therefore, oxygen can be efficiently discharged.
(5) The first exhaust unit has an exhaust port for discharging gas in the treatment chamber, the first air supply unit has an air supply port for supplying an inert gas in the treatment chamber, and the exhaust port has an exhaust port. , The air supply port may be arranged either above or below the third position, and the air supply port may be arranged either above or below the third position. In this case, the flow of the inert gas is formed in the spaces above and below the mounting portion at the third position. As a result, oxygen can be discharged more efficiently.
(6) The exhaust port may be arranged below the third position, and the air supply port may be arranged above the third position. In this case, the inert gas can be directly supplied to the space above the mounting portion at the third position. As a result, oxygen between the mounting portion and the light projecting portion can be discharged more efficiently, and the exposure of the substrate can be started in a short time from the loading of the substrate.
(7) The exhaust port and the air supply port may be arranged so as to sandwich the third position. In this case, a flow of inert gas is formed along the space around the mounting portion at the third position. As a result, oxygen can be discharged more efficiently.
(8) The exposure apparatus further includes a plurality of support members extending in the vertical direction in the processing chamber, the upper ends of the plurality of support members are higher than the first position and lower than the second position, and the mounting portion is , The plurality of support members may have a plurality of through holes through which the plurality of support members can pass, and the plurality of support members may penetrate the plurality of through holes of the mounting portion when the mounting portion is in the first position.
In this case, the plurality of support members can support the substrate carried into the processing chamber at the upper end higher than the first position and lower than the second position. Therefore, the substrate can be easily mounted on the mounting portion by raising the mounting portion from the first position. Further, the substrate can be supported by the upper ends of the plurality of support members by lowering the mounting portion from the second position. As a result, the substrate can be easily carried out of the processing chamber from the upper ends of the plurality of support members.
(9) The exposure apparatus further includes a pressure control unit that controls the pressure in the light projecting unit so that the pressure in the light projecting unit matches or approaches the pressure in the processing chamber, and the light projecting unit is a translucent window. It has a member, and the substrate in the processing chamber may be irradiated with vacuum ultraviolet light through the window member.
In this case, the substrate in the processing chamber is irradiated with vacuum ultraviolet rays from the light projecting portion through the window member. Here, since the pressure in the light projecting unit is controlled so that the pressure in the light projecting unit matches or approaches the pressure in the processing room, the gas in the processing room is discharged before the air is supplied to the processing room. Even in this case, there is almost no pressure difference between the processing chamber and the floodlight. Therefore, it is possible to prevent stress from being generated in the window member. As a result, the life of the window member is extended. Further, since it is not necessary to increase the thickness of the window member, the transmittance of the window member is improved. As a result, the efficiency of the exposure processing of the substrate can be improved.
(10) The pressure control unit includes a second exhaust unit for discharging the gas in the light projecting unit, a second air supply unit for supplying an inert gas into the light projecting unit, and a second exhaust unit. A second air supply unit that controls the second air supply unit so that the supply of the inert gas into the light projecting unit is started after the first time has elapsed since the discharge of the gas in the light projecting unit is started. It may include an air supply control unit. In this case, the pressure in the floodlight can be matched to or close to the pressure in the processing chamber by simple control.
(11) The pressure control unit may include a connecting unit that connects the internal space of the processing chamber and the internal space of the light projecting unit, and a second air supply unit that supplies the inert gas into the light projecting unit. In this case, the pressure in the floodlight can be matched to or close to the pressure in the processing chamber with simpler control.
(12) The substrate processing apparatus according to the second reference embodiment has a coating processing unit that forms a film on the substrate by applying a processing liquid to the substrate, and a heat treatment unit that heat-treats the substrate on which the film is formed by the coating processing unit. It also includes an exposure apparatus according to a first reference mode for exposing a substrate heat-treated by the heat-treated unit, and a developing processing unit for developing a film of the substrate by supplying a solvent to the substrate exposed by the exposure apparatus.
In this substrate processing apparatus, a film is formed on the substrate by applying the processing liquid to the substrate by the coating processing unit. The substrate on which the film is formed by the coating treatment section is heat-treated by the heat treatment section. The substrate heat-treated by the heat-treated section is exposed by the above-mentioned exposure apparatus. The film of the substrate is developed by supplying a solvent to the substrate exposed by the exposure apparatus by the developing processing unit.
In the exposure apparatus, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting unit, and the substrate can be efficiently exposed in a state where the light projecting unit and the substrate are in close proximity to each other. can. In addition, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is carried into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.
(13) The treatment liquid may contain an inducible self-assembling material. In this case, the substrate coated with the treatment liquid containing the inductive self-assembling material is heat-treated, so that microphase separation occurs on one surface of the substrate. In addition, a substrate on which two types of polymer patterns are formed by microphase separation is exposed and developed. As a result, one of the two types of polymers can be removed to form a finely divided pattern.
(14) The exposure method according to the third reference embodiment includes a step of moving the mounting portion to the first position in the processing chamber by the driving unit and a step of carrying the substrate into the processing chamber and mounting it on the mounting portion. After the step of starting the discharge of the gas in the treatment chamber by the first exhaust unit and the predetermined first time after the start of the discharge of the gas in the treatment chamber by the first exhaust unit, In the step of starting the supply of the inert gas to the treatment chamber by the first air supply unit and in a state where the oxygen concentration in the gas in the treatment chamber is lowered to a predetermined concentration, the mounting portion is set by the drive unit. A step of moving the substrate to a second position closer to the light projecting part than the position of 1, a step of exposing the substrate by irradiating the substrate in the processing chamber with vacuum ultraviolet rays by the light projecting unit, and a step of exposing the substrate by the driving unit. It includes a step of moving the substrate to the first position and a step of removing the substrate from the processing chamber.
According to this exposure method, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting unit, and the substrate is efficiently exposed in a state where the light projecting unit and the substrate are in close proximity to each other. be able to. In addition, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is carried into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.
(15) In the substrate processing method according to the fourth reference embodiment, a step of forming a film on the substrate by applying a treatment liquid to the surface to be processed of the substrate by the coating processing section and a film being formed by the coating processing section. The step of heat-treating the substrate by the heat treatment section, the exposure method according to the third reference embodiment in which the substrate heat-treated by the heat treatment section is exposed by the exposure apparatus, and the surface to be processed of the substrate exposed by the exposure apparatus are subjected to the development processing section. It includes the step of developing the film of the substrate by supplying a solvent.
According to this substrate processing method, the substrate after the film is formed and before the development is exposed to vacuum ultraviolet rays. In the exposure method, the substrate can be easily transferred between the processing chamber and the outside without interfering with the light projecting portion, and the substrate can be efficiently exposed in a state where the light projecting portion and the substrate are in close proximity to each other. can. In addition, the oxygen concentration in the gas in the processing chamber decreases in a short time after the substrate is carried into the processing chamber. Therefore, the exposure of the substrate can be started in a short time from the loading of the substrate. As a result, the efficiency of the exposure processing of the substrate can be improved.

100 ... Exposure device, 101 ... Connecting pipe, 110 ... Control unit, 120 ... Processing chamber, 121 ... Upper opening, 122 ... Conveyance opening, 123 ... Opening, 124 ... Support pin, 125, 155 ... Exhaust port, 126, 156 ... Air supply port, 130 ... Closure part, 131 ... Shutter, 132, 142 ... Connecting member, 133, 143 ... Drive device, 140 ... Elevating part, 141 ... Mounting plate, 150 ... Light projecting part, 151 ... Housing, 152 ... Translucent plate, 153 ... Light source unit, 154 ... Power supply device, 160, 170 ... Exhaust unit, 180, 190 ... Air supply unit, 200 ... Board processing device, 210 ... Control device, 220 ... Conveyor device, 230 ... Heat treatment device , 240 ... coating device, 250 ... developing device, A ... oxygen concentration acquisition unit, a1 to a8 ... main pipe, B, C ... exhaust control unit, b1 to b8 ... branch pipe, c1, c2 ... suction device, D, E ... Air supply control unit, F ... Open / close control unit, G ... Elevation control unit, H ... Illuminance acquisition unit, h1 ... Through hole, h2 ... Lower opening, I ... Exposure calculation unit, J ... Light projection control unit, K ... Connection Control unit, L1 ... Underlayer, L2 ... Guide pattern, L3 ... DSA film, p1-p4 ... Piping, P1-P4 ... Connection port, Q1, Q2 ... Pattern, s1 ... Pressure gauge, s2 ... Oxygen meter, s3 ... Ozone concentration meter, s4 ... Illuminance meter, v1 to v9 ... Valve, V1, V2 ... Internal space, W ... Substrate

Claims (16)

A processing room for accommodating the substrate and
In the processing chamber, a mounting portion on which the substrate is mounted and a mounting portion
A first exhaust unit for discharging gas in the processing chamber and
A first air supply unit for supplying the inert gas to the treatment chamber, and
A light projecting unit that is placed in the upper part of the processing chamber and emits vacuum ultraviolet rays,
The first exhaust unit is opened, and after a predetermined first time has elapsed from the start of gas discharge in the processing chamber by the first exhaust unit, the first exhaust unit is opened. A first air supply control unit that opens the first air supply unit and controls the first air supply unit so that the supply of the inert gas to the processing chamber is started.
Light projection control that controls the light projecting unit so as to expose the substrate by irradiating the substrate in the processing chamber with vacuum ultraviolet rays in a state where the oxygen concentration in the gas in the processing chamber is lowered to a predetermined concentration. Department and
When the substrate is carried into the processing chamber and the substrate is carried out of the processing chamber, the above-mentioned placing portion is in the first position in the processing chamber, and when the substrate is irradiated with vacuum ultraviolet rays by the light projecting portion. The drive unit that moves the pre-described unit to the first position and the second position so that the pre-described unit is located at a second position closer to the light projecting unit than the first position. equipped with a door,
The light projecting portion is arranged above the above-mentioned placing portion, emits vacuum ultraviolet rays downward, and emits vacuum ultraviolet rays downward.
The second position is below the floodlight, the first position is below the second position, and so on.
The light projecting portion overlaps with the previously described placing portion in a plan view.
The first position and the second position overlap with the light projecting portion in a plan view.
The driver may Ru raises and lowers the front mounting section between said first position and the second position, the exposure apparatus. The exhaust of the gas in the processing chamber is stopped after a predetermined second time has elapsed from the start of the supply of the inert gas to the processing chamber by the first air supply unit. The exposure apparatus according to claim 1, further comprising an exhaust control unit that controls the first exhaust unit. When the gas in the processing chamber is discharged by the first exhaust unit, the drive unit has a third position in which the pre-described unit is above the first position and below the second position. The exposure apparatus according to claim 1 or 2, wherein the above-described mounting portion is moved so as to be in the position of. A processing room for accommodating the substrate and
In the processing chamber, a mounting portion on which the substrate is mounted and a mounting portion
A first exhaust unit for discharging gas in the processing chamber and
A first air supply unit for supplying the inert gas to the treatment chamber, and
A floodlight that emits vacuum ultraviolet rays,
The first exhaust gas unit starts to discharge the gas in the treatment chamber, and after a predetermined first time has elapsed, the supply of the inert gas to the treatment chamber is started. The first air supply control unit that controls the air supply unit 1 and
Light projection control that controls the light projecting unit so as to expose the substrate by irradiating the substrate in the processing chamber with vacuum ultraviolet rays in a state where the oxygen concentration in the gas in the processing chamber is lowered to a predetermined concentration. Department and
When the substrate is carried into the processing chamber and the substrate is carried out of the processing chamber, the above-mentioned placing portion is in the first position in the processing chamber, and when the substrate is irradiated with vacuum ultraviolet rays by the light projecting portion. A drive unit that moves the pre-described placement unit to the first position and the second position so that the pre-described placement unit is located at a second position closer to the light projecting unit than the first position. With and
The light projecting portion is arranged above the above-mentioned placing portion, emits vacuum ultraviolet rays downward, and emits vacuum ultraviolet rays downward.
The second position is below the floodlight, the first position is below the second position, and so on.
The drive unit raises and lowers the pre-described unit between the first position and the second position, and when the gas in the processing chamber is discharged by the first exhaust unit, the pre-described unit is installed. An exposure apparatus that moves the above-described mounting portion so that the portion is located at a third position above the first position and below the second position. The first exhaust unit has an exhaust port for discharging gas in the processing chamber.
The first air supply unit has an air supply port for supplying an inert gas in the processing chamber.
The exhaust port is located either above or below the third position.
The exposure apparatus according to claim 3 or 4, wherein the air supply port is arranged either above or below the third position. The exhaust port is located below the third position.
The exposure apparatus according to claim 5, wherein the air supply port is arranged above the third position. The exposure apparatus according to claim 5 or 6, wherein the exhaust port and the air supply port are arranged so as to sandwich the third position. In the processing chamber, a plurality of support members extending in the vertical direction are further provided.
The upper ends of the plurality of support members are higher than the first position and lower than the second position.
The above-mentioned mounting portion has a plurality of through holes through which the plurality of support members can pass.
The exposure apparatus according to any one of claims 1 to 7, wherein the plurality of support members penetrate the plurality of through holes of the previously described mounting portion when the previously described mounting portion is in the first position. .. A pressure control unit for controlling the pressure in the light projecting unit so that the pressure in the light projecting unit matches or approaches the pressure in the processing chamber is further provided.
The exposure apparatus according to any one of claims 1 to 8, wherein the light projecting unit has a translucent window member and irradiates a substrate in the processing chamber with vacuum ultraviolet rays through the window member. The pressure control unit
A second exhaust unit for discharging the gas in the light projecting unit, and
A second air supply unit for supplying the inert gas into the light projecting unit, and
The second exhaust unit starts supplying the inert gas into the light projecting unit after the first time has elapsed since the second exhaust unit started discharging the gas into the light projecting unit. 9. The exposure apparatus according to claim 9, further comprising a second air supply control unit that controls the air supply unit. The pressure control unit
A connecting portion that connects the internal space of the processing chamber and the internal space of the floodlight portion,
The exposure apparatus according to claim 9, further comprising a second air supply unit that supplies the inert gas into the light projecting unit. A coating treatment unit that forms a film on the substrate by applying the treatment liquid to the substrate,
A heat treatment section that heat-treats the substrate on which the film is formed by the coating treatment section, and a heat treatment section.
The exposure apparatus according to any one of claims 1 to 11, which exposes a substrate heat-treated by the heat-treated portion.
A substrate processing apparatus including a developing processing unit that develops a film of the substrate by supplying a solvent to the substrate exposed by the exposure apparatus. The substrate processing apparatus according to claim 12, wherein the treatment liquid contains an inductive self-assembling material. A step of moving the mounting unit to the first position in the processing chamber in the direction of emitting vacuum ultraviolet rays by the drive unit, and
The step of bringing the substrate into the processing chamber and placing it on the above-mentioned storage part,
A step of starting the discharge of gas in the processing chamber by the first exhaust unit, and
The first exhaust unit is opened, and after a predetermined first time has elapsed from the start of gas discharge in the processing chamber by the first exhaust unit, the first exhaust unit is opened. The step of opening the first air supply unit and starting the supply of the inert gas to the processing chamber by the first air supply unit.
In a state where the oxygen concentration in the gas in the processing chamber is decreased to a concentration predetermined from above a and the light projecting portion than the first position in the direction of emission of vacuum ultraviolet placing part by the drive unit And the step to move it to the second position below,
A step of exposing the substrate by irradiating the substrate in the processing chamber below with vacuum ultraviolet rays by the light projecting portion arranged above the above-mentioned placing portion.
A step of moving the previously described placing portion to the first position by the driving portion, and
Look including the step of unloading the substrate from the processing chamber,
The light projecting portion overlaps with the previously described placing portion in a plan view.
An exposure method in which the first position and the second position overlap with the light projecting portion in a plan view. A step of moving the mounting unit to the first position in the processing chamber in the direction of emitting vacuum ultraviolet rays by the drive unit, and
The step of bringing the substrate into the processing chamber and placing it on the above-mentioned storage part,
A step of starting the discharge of gas in the processing chamber by the first exhaust unit, and
When the gas in the processing chamber is discharged by the first exhaust unit, the above-described storage unit is located at a third position above the first position and below the second position. Steps to move the above-mentioned placement part and
After a predetermined first time has elapsed from the start of gas discharge in the processing chamber by the first exhaust unit, the first air supply unit supplies the inert gas to the processing chamber. Steps to start and
In a state where the oxygen concentration in the gas in the processing chamber is lowered to a predetermined concentration, the driving unit causes the above-mentioned stationary portion to be above the third position in the emission direction of vacuum ultraviolet rays and from the floodlight portion. And the step to move it to the second position below
A step of exposing the substrate by irradiating the substrate in the processing chamber below with vacuum ultraviolet rays by the light projecting portion arranged above the above-mentioned placing portion.
A step of moving the previously described placing portion to the first position by the driving portion, and
Including the step of removing the substrate from the processing chamber.
The light projecting portion overlaps with the previously described placing portion in a plan view.
An exposure method in which the first position, the second position, and the third position overlap with the light projecting portion in a plan view. The step of forming a film on the substrate by applying the treatment liquid to the surface to be treated of the substrate by the coating treatment unit, and
The step of heat-treating the substrate on which the film is formed by the coating treatment section by the heat treatment section,
The exposure method according to claim 14 or 15, wherein the substrate heat-treated by the heat-treated portion is exposed by an exposure apparatus.
A substrate processing method comprising a step of developing a film of a substrate by supplying a solvent to a surface to be processed of the substrate exposed by the exposure apparatus by a developing processing unit.

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