JP6920823B2 - Substrate with reflective member and its manufacturing method - Google Patents

Description

The present invention relates to a substrate with a reflective member including a reflective member for reflecting light emitted from a light emitting element, and a method for manufacturing the same.

In recent years, optical application technologies such as medical devices, optical communications, and optical disks have made great progress, and the electronic devices used in the optical application technologies have made great progress. In particular, light emitting devices are required to have high output, small size, and low cost.
Conventionally, as a miniaturized light emitting device, a light emitting device in which a reflecting member and a light emitting element are mounted on a substrate has been provided.

FIG. 14 is an example of a conventional light emitting device, and is for explaining a semiconductor laser package in which a semiconductor laser as a light emitting element is packaged.
The semiconductor laser package 900 is configured by mounting a semiconductor laser chip 910 on a container 904 and sealing the container 904 with a transparent lid 905 (see, for example, Patent Document 1).
The semiconductor laser chip 910 includes a substrate 902 on which the bonding films 906a and 906b are formed, a semiconductor laser 901, and a reflection member 903.
The bonding film 906a formed on the substrate 902 is a bonding film between the semiconductor laser 901 and the substrate 902, and the bonding film 906b is a bonding film between the reflective member 903 and the substrate 902. The semiconductor laser 901 and the reflecting member 903 are fixed on the substrate 902 by the bonding films 906a and 906b. As the reflective member 903, a resin-based material such as silicone mixed with a filler such as a white pigment is widely used.
The semiconductor laser 901 is arranged on the substrate 902 so that the laser emission port 901E, which is the emission port thereof, faces the reflection surface 903S of the reflection member 903.
Further, a conductive film (not shown) for electrically connecting each of the semiconductor laser 901, the substrate 902, and the container 904 is formed, and the conductive films formed on the respective conductive films are electrically formed by wires 915a and 915b. It is connected to the.

The semiconductor laser package 900 emits the laser light 911 from the laser emission port 901E of the semiconductor laser 901 toward the reflecting surface 903S of the reflecting member 903, and changes the optical axis of the laser light 911 at the reflecting surface 903S of the reflecting member 903. .. The laser light 911 whose optical axis has been changed passes through the transparent lid 905 and is emitted to the outside of the semiconductor laser package 900.

FIG. 15 is a perspective view for explaining a conventional method for manufacturing a semiconductor laser chip.
The semiconductor laser chip 910 is manufactured from a substrate wafer 902WF having a plurality of chip forming regions 902 channels for forming the semiconductor laser chip 910.
(1) First, the conductive film and the bonding films 906a and 906b are formed on the flat surface of the substrate wafer 902WF.
(2) Next, the bar-shaped reflective member 903 is installed and fixed on the bonding film 906b so as to straddle the plurality of chip forming regions.
(3) Next, the semiconductor laser 901 is installed and fixed on the bonding film 906a.
(4) Next, the substrate wafer 902WF is diced along the dicing line 902DL, which is the boundary of the chip forming region, and the semiconductor laser chip 910 is fragmented.
(5) With the above, the semiconductor laser chip 910 is completed.

Japanese Unexamined Patent Publication No. 2006-32765

In recent years, with the increasing functionality of electronic devices equipped with light emitting elements, the output light of light emitting devices, for example, semiconductor light emitting elements, is not only used at a low output of several tens of mW level or less, but also several tens to several tens to several. It is required to be used in a wide output range, from medium output of 100 mW level to high output of several W level or more.

In the conventional semiconductor laser package with a reflecting member, the laser light emitted from the outlet of the semiconductor laser, which is a light emitting element, is reflected by the reflecting member and emitted to the outside of the semiconductor laser package. At this time, it is desirable that the reflecting member that reflects the laser light reflects all the laser light incident on the reflecting member.
However, it is practically difficult to reflect all the laser light (for example, the laser light emitted by the semiconductor laser) incident on the reflecting member (for example, the resin reflecting member). Then, a part of the laser light that cannot be completely reflected by the reflecting member is absorbed in the reflecting member, and the absorbed light generates heat in the reflecting member. The heat generated by the reflective member causes thermal expansion of the reflective member and causes thermal deformation of the reflective surface. Further, the heat-deformed reflecting surface causes the reflected laser light to deviate from the specified optical axis, causes light scattering, and the like, which may cause deterioration of the output laser light.

In particular, a reflective member made of a resin-based material having low thermal conductivity is unlikely to release heat inside the reflective member to the outside, and heat tends to be trapped inside the reflective member, so that the reflective member is likely to be thermally deformed. Further, when the output of the light emitting element is high, the amount of energy of the emitted light is also high, so that the heat absorption of the reflecting member becomes more remarkable, and the problem becomes greater.
For example, as a high-power light emitting device using a semiconductor laser, a pen-type semiconductor laser scalpel for dentistry can be mentioned, and the output is about 3 to 5 W.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate with a reflective member that suppresses thermal deformation of the reflective member and a method for manufacturing the same.

In a substrate having a light emitting element mounting portion and a substrate with a reflective member having a reflective member on the substrate,
A step portion is formed on the substrate, and the reflective member covers and fixes at least a part of the step portion and is fixed.
The substrate is a substrate with a reflective member having a groove having a side wall surface arranged on the same surface as the reflective surface of the reflective member between the light emitting element mounting portion of the substrate and the reflective member.

Further, the convex portion of the substrate may be provided at one or a plurality of locations.

Further, a groove portion is formed on the substrate, and the step portion may be formed by the groove portion.

Further, the reflective member may be formed from the bottom surface of the groove portion of the substrate.

In a method for manufacturing a substrate with a reflective member, which comprises a substrate having a light emitting element mounting portion and a reflective member on the substrate, and the thermal conductivity of the substrate is higher than the thermal conductivity of the reflective member.
A step of forming a step portion on the substrate and a step of fixing a material constituting the reflective member to the substrate so as to cover at least a part of the step portion.
The material is processed to form the reflective surface of the reflective member, and at the same time, the groove between the light emitting element mounting portion of the substrate and the reflective member is provided with a side wall surface on the same surface as the reflective surface. It is a method of manufacturing a substrate with a reflective member having a step of forming the above.

A step of fixing a material constituting the reflecting member to the substrate includes the steps of placing a mold having a concave portion on the substrate so that the recess covers the step portion, the material constituting the reflecting member and the It may have a step of filling the recess and hardening.

According to the present invention, by providing a reflective member that covers and fixes at least a part of the stepped portion on the substrate provided with the stepped portion, the heat generated in the reflective member is efficiently released to the substrate, and the reflection of the reflective member is reflected. Thermal deformation of the surface can be suppressed. Therefore, it is possible to suppress the deterioration of the reflected light due to the axis shift of the reflected light reflected by the reflecting member, the scattering of the light, and the like.

Explanatory drawing of semiconductor laser package which concerns on Embodiment 1 of this invention Explanatory drawing of the substrate with a reflective member which concerns on Embodiment 1 of this invention. FIG. 2A is an enlarged explanatory view showing a substrate with a reflective member according to a first embodiment of the present invention. Explanatory drawing of the substrate with a reflective member which concerns on Embodiment 2 of this invention. Explanatory drawing of the substrate with a reflective member which concerns on another embodiment of this invention. Explanatory drawing of the substrate with a reflective member which concerns on another embodiment of this invention. Explanatory drawing of the substrate with a reflective member which concerns on another embodiment of this invention. The explanatory view of the manufacturing method of the substrate with a reflective member which concerns on Embodiment 1 of this invention. The explanatory view of the manufacturing method of the substrate with a reflective member which concerns on Embodiment 1 of this invention. The explanatory view of the manufacturing method of the substrate with a reflective member which concerns on Embodiment 1 of this invention. The explanatory view of the manufacturing method of the substrate with a reflective member which concerns on Embodiment 2 of this invention. The explanatory view of the manufacturing method of the substrate with a reflective member which concerns on Embodiment 2 of this invention. The explanatory view of the manufacturing method of the substrate with a reflective member which concerns on Embodiment 2 of this invention. Explanatory drawing of a conventional semiconductor laser package. Explanatory drawing of the manufacturing method of the conventional semiconductor laser chip.

Hereinafter, the best embodiment of the present invention will be described.
The substrate with a reflective member has a reflective member mounted on the substrate and reflects light incident on the substrate with the reflective member from a light emitting element provided outside the substrate or on the substrate.
In the present embodiment, taking a semiconductor laser package in which a light emitting element is mounted on a substrate with a reflective member and packaged as an example, the substrate with a reflective member of the present invention can be obtained from FIGS. 8 to 15 with reference to FIGS. 1 to 7. The method for manufacturing the substrate with a reflective member of the present invention will be described with reference to.
However, the substrate with a reflective member of the present invention and the method for manufacturing the same are not limited to the present embodiment.
For example, the present invention can be applied to a light emitting device equipped with a light emitting element such as a solid-state laser, a gas laser, a semiconductor laser, an LED, or an optical fiber (wavewave path).

Embodiment 1
FIG. 1 is for explaining a semiconductor laser package having a substrate with a reflective member of the present invention.
As shown in FIG. 1, the semiconductor laser package 100 has a container 104, a semiconductor laser chip 110 mounted in the container 104, and a transparent lid 105 for sealing the semiconductor laser chip 110 in the container 104.

The semiconductor laser chip 110 includes a semiconductor laser 101 which is a light emitting element, a substrate 102, and a reflection member 103. The semiconductor laser 101 and the reflecting member 103 are mounted on one surface of the substrate 102. Further, on the other surface of the substrate 102, a bonding film 102e for bonding the substrate 102 and the container 104 is provided. The semiconductor laser chip 110 reflects the laser light 111 emitted from the laser emission port 101E of the semiconductor laser 101 by the reflecting member 103, and emits the laser light 111 above the semiconductor laser chip 110. The laser light 111 is emitted from the laser emission port 101E at a predetermined angle with respect to the optical axis 111A of the laser light 111.

The container 104 has a bottom portion 104b formed of a flat plate, a tubular wall portion 104c is erected around the bottom portion 104b, and a recess 104a is provided as a space surrounded by the bottom portion 104b and the wall portion 104c. There is. Further, the upper opening end of the wall portion 104c has an end face 104f.
Further, the surface of the bottom portion 104b on the opening side of the recess 104a is a bottom surface 104bb, and the bottom surface 104bb has a mounting area 104bA on which the semiconductor laser chip 110 is mounted. The mounting region 104bA has a bonding film 104e made of a thin film for fixing the semiconductor laser chip 110.

The semiconductor laser chip 110 and the container 104 join and fix the bonding film 102e and the bonding film 104e. The bonding film 102e and the bonding film 104e may be any material that can be bonded to each other, and more preferably a bonding material having good thermal conductivity. For example, a thin film in which titanium-platinum-gold (Ti-Pt-Au) is laminated in this order from the substrate 102 side can be used for the bonding film 102e, and gold-tin solder (Au-Sn) can be used for the bonding film 104e. Here, by using a heat conductive bonding agent or the like for the bonding film 102e and the bonding film 104e, it is possible to secure a thermal flow path for efficiently releasing the heat generated by the semiconductor laser chip 110 to the container 104.
Here, the semiconductor laser chip 110 and the container 104 are formed by a bonding film 102e and a bonding film 104e made of a metal material. However, the bonding film 102e and the bonding film 104e may be formed by bonding the semiconductor laser chip 110 and the container 104, for example. , Resin-based material, glass, etc. may be used. More preferably, a material having good thermal conductivity is preferable.
Further, the semiconductor laser chip 110 and the container 104 are provided with the bonding film 102e and the bonding film 104e, respectively, but the present invention is not limited to this, and the bonding film may be provided only on either the substrate 102 or the container 104.

Iron (Fe) is used as the material of the container 104 of this embodiment.
The material of the container 104 is preferably a low thermal expansion material having high thermal conductivity and a thermal expansion coefficient close to that of the semiconductor laser chip 110.
With this configuration, distortion of the semiconductor laser chip 110 generated by the difference in thermal expansion between the semiconductor laser chip 110 and the container 104 can be suppressed, and a good fixed state between the semiconductor laser chip 110 and the container 104 can be maintained. ..
The material of the container 104 is not limited to the material of the present embodiment. For example, in addition to iron-based (Fe-based) materials, materials with high thermal conductivity and a coefficient of thermal expansion close to those of the semiconductor laser chip 110, such as molybdenum (Mo), copper (Cu), Kovar, 42 alloy, and silicon (Si). ), Silicon nitride (SiC), sapphire, polybiphenyl chloride (PCB), aluminum nitride (AlNx), alumina (Al ₂ O ₃ ) can be used. In addition to these, it can also be formed from any known material used in related applications.

The transparent lid 105 is mounted on the end surface 104f of the wall portion 104c of the container 104, seals the recess 104a of the container 104, and is emitted by the semiconductor laser 101 of the semiconductor laser chip 110 mounted in the recess 104a. The laser light 111 reflected by the reflecting member 103 is transmitted and emitted to the outside of the semiconductor laser package 100.

A bonding film 104g is interposed between the transparent lid 105 and the end surface 104f of the wall portion 104c, and the bonding film 104g joins the transparent lid 105 and the container 104. In this way, the transparent lid 105 seals the semiconductor laser package 100 in the container 104.

In the present embodiment, glass is used as the material of the transparent lid 105, but the present invention is not limited to this.
The material of the transparent lid 105 may be a crystal material such as sapphire having excellent light transmission, a resin-based material such as a transparent acrylic resin, or the like, as long as it transmits the laser beam 111.
However, in order to suppress the stress generated by the difference in thermal expansion between the transparent lid 105 and the container 104, it is preferable to select a material having a value having a coefficient of thermal expansion close to each other.
Further, when it is not necessary to airtightly seal the semiconductor laser package 100, a transparent lid may not be provided.

The semiconductor laser chip 110 is located at a position where the laser light 111 reflected by the reflecting member 103 can be transmitted by the light transparent lid 105, and the trajectory of the laser light 111 reflected by the reflecting member 103 is inside the wall portion 104c of the container 104. It is mounted on the bottom surface 104bb of the container 104 at a position where it does not hit the side surface, that is, the laser beam 111 is not kicked by the wall portion 104c.

Next, the semiconductor laser chip 110 will be described in detail. FIG. 2 is a diagram for explaining the semiconductor laser chip 110 according to the first embodiment of the present invention. The semiconductor laser chip 110 is mounted on the semiconductor laser 101, the substrate 102 on which the conductive film 108 is formed on the surface and the semiconductor laser 101 is mounted, the conductive bonding film 106a for fixing the semiconductor laser 101 to the substrate 102, and the substrate 102. It has a reflecting member 103 that reflects the laser light 111 of the semiconductor laser 101.

Here, the direction in the semiconductor laser chip in the present embodiment is defined. In the state of the semiconductor laser chip 110, the direction of the optical axis 111A of the laser beam 111 emitted from the laser ejection port 101E is orthogonal to the X-axis direction and the X-axis direction with respect to the surface on which the semiconductor laser 101 is mounted on the substrate 102. The direction perpendicular to the Z-axis direction is defined as the Z-axis direction, and the direction orthogonal to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.
In the X-axis direction, the emission direction of the laser beam 111 is the positive direction in the X-axis direction, and in the Z-axis direction, the surface side on which the semiconductor laser 101 is mounted on the substrate 102 is the positive direction in the Z-axis direction. Further, the surfaces having the X-axis, the Y-axis, and the Z-axis as normals are the X-axis surface, the Y-axis surface, and the Z-axis surface, respectively.

The semiconductor laser 101 has a rectangular parallelepiped shape. One side surface of the semiconductor laser 101 is a laser emission surface 101C provided with a laser emission port 101E that emits a laser beam 111 parallel to the X-axis surface, and one side surface orthogonal to the laser emission surface 101C is mounted on the substrate 102. The lower surface 101b (parallel to the Y-axis surface) is a surface, and the lower surface 101b is provided with an electrode film 101p for electrically connecting the semiconductor laser 101 and the conductive film 108 of the substrate 102. Further, one side surface facing the lower surface 101b is an upper surface 101a, and the upper surface 101a is provided with an electrode film 101n for electrically connecting the semiconductor laser 101 and the container 104. The electrode films 101n and 101p are electrodes for supplying power to the semiconductor laser 101.

As the electrode film 101n and the electrode film 101p, it is preferable to use a thin film of gold (Au) in consideration of conductivity and corrosion resistance. Further, the electrode film 101n and the electrode film 101p may be formed as thin films in which titanium-platinum-gold (Ti-Pt-Au) is laminated in this order from the surface of the semiconductor laser 101, for example, from the viewpoint of adhesion to the semiconductor laser 101. ..

The semiconductor laser 101 emits a laser beam 111 having a predetermined emission angle from the laser emission port 101E. The laser light 111 is reflected by the reflection member 103 arranged on the substrate 102 so as to face the semiconductor laser emission port 101E, and is emitted to the outside of the semiconductor laser package 100.
The laser light emitted from a general semiconductor laser spreads in an elliptical shape and is emitted. This is a phenomenon caused by the diffraction of light that occurs because the laser emission port of the semiconductor laser is rectangular, and the far-field image of the laser beam becomes an elliptical shape that is long in the vertical direction and short in the horizontal direction.
In the state where the semiconductor laser 110 of the present embodiment is mounted on the substrate 102, the laser light 111 emits about ± 30 ° in the Z-axis direction and ± 8 ° in the Y-axis direction with respect to the optical axis 111A of the laser light 111. It is emitted from the laser emission port 101E with a corner.

The substrate 102 is a surface on which the semiconductor laser 101 is mounted and has an upper surface 102a parallel to the Z-axis surface and a lower surface 102b facing the upper surface 102a and parallel to the Z-axis surface.
A conductive film 108 is formed on the upper surface 102a of the substrate 102, and the conductive film 108 is laminated in the order of titanium-platinum-gold (Ti-Pt-Au) from the substrate 102 side in terms of conductivity and bondability. It is preferably a thin film. Further, a conductive bonding film 106a for bonding the semiconductor laser 101 and the conductive film 108 is formed on the conductive film 108 at the mounting location of the semiconductor laser 101. Gold-tin solder (Au-Sn) is used as the material of the conductive bonding film 106a in the present embodiment.
As the conductive bonding film 106a used for bonding the substrate 102 and the semiconductor laser 101, Sn-Pb, In, or the like can also be used, and a material having a particularly high thermal conductivity is preferable.

A bonding film 102e for fixing to the bottom surface 104bb of the container 104 is formed on the lower surface 102b of the substrate 102. The bonding film 102e is a thin film in which titanium-platinum-gold (Ti-Pt-Au) is laminated in this order from the substrate 102 side.

^{The material of the substrate 102 is close to the coefficient of thermal expansion (about 6.5 × 10-6} / ° C.) of the semiconductor laser 101 from the viewpoint of mounting the semiconductor laser 101 that generates heat, and has an excellent thermal conductivity (100 W / (m). -K) It is preferable to have the above) characteristics. Aluminum nitride (AlN) is used as the material of the substrate 102 in the present embodiment, its coefficient of thermal expansion is about 5.0 × 10 ^-6 / ° C, and its thermal conductivity is about 150 W / (m · K). be.

The material of the substrate 102 is not limited to these. The substrate 102 is preferably made of a material having excellent thermal conductivity and a coefficient of thermal expansion close to that of the semiconductor laser 101. For example, sapphire, alumina (Al ₂ O ₃ ), etc. are used, and the coefficient of thermal expansion is 3 to 10 × 10 ^-6 / ° C. Examples of materials having a thermal conductivity of 100 W / (m · K) or more include silicon carbide (SiC), tangaloy (T-cBN), Cu-W, Cu-Mo, and silicon (Si). Especially when a high-power laser is used and the thermal conductivity needs to be very large, diamond or the like can also be used.

By setting the coefficients of thermal expansion of the semiconductor laser 101 and the substrate 102 to the same or close values, the stress generated by the difference in thermal expansion between the semiconductor laser 101 and the substrate 102 can be suppressed, and the fixed portion between the semiconductor laser 101 and the substrate 102 can be suppressed. Can be reduced from coming off.
Further, by increasing the thermal conductivity of the substrate 102 as much as possible, the heat generated by the semiconductor laser 101 can be efficiently released to the outside (container 104, etc.).

FIG. 3 is an enlarged view of part A in FIG.
The substrate 102 is arranged in the positive direction of the X-axis from the laser emission surface 101C of the semiconductor laser 101, is formed across the substrate 102 in parallel with the Y-axis, and has a groove portion having a rectangular cross-sectional shape on the Y-axis surface. It includes 112a.
The groove portion 112a includes a groove bottom surface 112ab which is a bottom surface portion of the groove portion 112a, a side wall surface 120Wb which is a side wall portion of the groove portion 112a, and a side wall surface 120Wa which is located in the positive direction of the X-axis from the side wall surface 120Wb and is a side wall portion of the groove portion 112a. It is provided with a first step portion 120a composed of a groove bottom surface 112ab, a side wall surface 120Wa, and an upper surface 102a, and a second step portion 120b composed of a groove bottom surface 112ab, a side wall surface 120Wb, and an upper surface 102a. The side wall surface 120W and the side wall surface 120Wb are surfaces parallel to the X-axis surface, and the groove bottom surface 112ab is a surface parallel to the Z-axis surface.

Further, the substrate 102 is arranged in the positive direction of the X-axis from the groove 112a, is formed across the substrate 102 in parallel with the Y-axis, and has a rectangular cross-sectional shape of the Y-axis surface to form a part of the substrate 102. A notched L-shaped notch 112b is provided.
The L-shaped notch 112b is composed of a notched bottom surface 112bb located in the negative direction of the Z axis from the upper surface 102a of the substrate 102 and a side wall surface 120Wc connecting the upper surface 102a of the substrate 102 and the notched bottom surface 112bb. A third step portion 120c including a side wall surface 120 Wc and an upper surface 102a is provided. The side wall surface 120 Wc is parallel to the X-axis surface, and the notched bottom surface 112 bb is a surface parallel to the Z-axis surface.

Further, the substrate 102 includes a convex portion 109 composed of a first step portion 120a and a third step portion 120c between the groove portion 112a and the L-shaped notch portion 112b. The convex portion 109 is formed across the substrate 102 in parallel with the Y-axis, and the cross-sectional shape of the Y-axis surface is rectangular.

A reflective member 103 is mounted on the substrate 102. The reflecting member 103 includes a reflecting surface 103S for reflecting the laser light 111 emitted from the laser emitting port 101E of the semiconductor laser 101, and the reflecting surface 103S is installed so as to face the laser emitting surface 101C of the semiconductor laser 111. NS. Since the reflecting surface 103S emits the laser beam 111 parallel to the X axis to the outside of the semiconductor laser package 100, the reflecting surface 103S has a predetermined angle with respect to the optical axis 111A. In the present embodiment, the reflecting surface 103S is parallel to the Y axis and Z. It has a surface inclined by 45 ° with respect to the shaft surface. The reflective member 103 has a substantially triangular columnar shape having the reflective surface 103S as one surface, and the cross-sectional shape of the Y-axis surface is substantially triangular.

In the reflective member 103, one surface having a substantially triangular columnar shape is a mounting surface on the substrate 102, and the mounting surface covers the groove portion 112a, the convex portion 109, and the L-shaped notch portion 112b, and the reflective member 103 mounts the reflective member 103. It is mounted on the substrate 102 by fixing the surface to the substrate 102.
Specifically, the reflective member 103 covers the groove bottom surface 112ab, the side wall surface 120Wa, the upper surface 102a of the substrate 102, the side wall surface 120Wc, and the notched bottom surface 112bb and is fixed to the substrate 102. It is configured to cover the first step portion 120a and the third step portion 120c on the substrate 102.
That is, the reflective member 103 mounted on the substrate 102 covers and fixes at least a part of the stepped portion of the substrate 102.

The reflective member 103 in the present embodiment uniformly contains a filler in the dough of the resin-based material. Specifically, the dough is made of a silicone resin-based material, and the filler is made of alumina (Al ₂ O ₃ ). It contains aluminum nitride (AlN), titania (TiO ₂ ) and the like.
By incorporating a material having high thermal conductivity such as aluminum nitride (AlN) as a filler in the fabric of the resin-based material, the thermal conductivity can be improved as compared with the reflective member made of only resin.
By using a material having a high reflectance such as white alumina (Al ₂ O ₃ ) as a filler, the reflectance of the reflective member can be increased.

The thermal conductivity of the reflective member 103 is preferably 0.2 to 10.0 W / (m · K), more preferably 0.4 to 5.0 W / (m · K). The reflectance of the reflective member 103 is preferably 80% or more, more preferably 90% or more.
The material of the reflective member is not limited to the silicone resin-based material used in the present embodiment, and for example, an epoxy resin-based material, an acrylic resin-based material, or the like can also be used.

From the viewpoint of improving thermal conductivity, the filler may be high-purity alumina (Al ₂ O ₃ (99.9%)) containing aluminum nitride (AlN) and boron nitride (BN). good. Further, a combination of aluminum (Al) and silicon oxide (SiO ₂ ) and silver (Ag) and silicon oxide (SiO ₂ ) may be used as a filler, and _{the component ratio of silicon oxide (SiO 2} ) may be adjusted appropriately. It is also possible to improve the thermal conductivity and the light reflectance. Further, the material of the resin or the filler can be appropriately selected according to the desired characteristics such as thermal conductivity and reflectance, and various materials may be used in combination.

Since the surface roughness of the reflective surface 103S of the reflective member 103 affects the reflectance, a flat mirror surface is preferable. The surface roughness of the reflective surface 103S is Ra of 40 nm or less, more preferably the surface roughness Ra of 10 nm or less.

In the present invention, the reflective member 103 provided with the reflective surface 103S is fixed so as to cover the groove bottom surface 112ab, the convex portion 109, and the notched bottom surface 112bb that form the stepped portion provided on the substrate 102.
As a result, the reflective member 103 and the substrate 102 are fixed by a plurality of surfaces including the groove bottom surface 112ab, the convex portion 109, and the notched bottom surface 112bb, so that the contact surfaces between the reflective member and the substrate are flat with each other as in the conventional case. Compared with the form of fixing at the joint surface, the contact area between the reflective member 103 and the substrate 102 is increased, and the effect of increasing the force for fixing the reflective member 103 and the substrate 102 can be obtained. Further, while the substrate 102 is made of a material having relatively high thermal conductivity, the reflective member 103 has higher thermal conductivity than the thermal conductivity of the substrate 102 even when it contains a filler having excellent thermal conductivity. Although it is much lower, the contact area between the reflective member 103 and the substrate 102 is large, and as a result, heat can be efficiently transferred from the reflective member 103 to the substrate 102.

Further, since the reflective member 103 covers at least a part of the stepped portion of the substrate 102, that is, the stepped portion of the substrate 102 bites into the reflective member 103, the contact surfaces between the conventional reflective member and the substrate are flat with each other. A part of the reflective member in the form of being fixed by the joint surface is replaced with the material of the substrate 102, and the heat of the reflective member having low thermal conductivity can be transferred to the substrate with high thermal conductivity more efficiently. can.

Therefore, in the embodiment of the present invention, the reflective surface 103S caused by the thermal expansion of the reflective member 103 by absorbing a part of the laser beam 111 and more efficiently transferring the heat trapped in the reflective member 103 to the substrate 102. It is possible to obtain the effect of suppressing the thermal deformation of the reflected light and suppressing the axis deviation of the reflected light and the deterioration of the reflected light.

Next, the secondary effects of the present embodiment are shown below.
From the viewpoint of the emission direction and emission angle of the laser beam 111, the position where the semiconductor laser 101 is mounted on the upper surface 102a of the substrate 102 is such that the laser emission surface 101C is located on the side wall surface 120Wb (plane parallel to the X-axis surface) of the groove 112a. It is preferably parallel and the laser emitting surface 101C is preferably between the side wall surface 120Wb and the reflecting surface 103S, and more preferably is located on the same X-axis surface as the laser emitting surface 101C and the side wall surface 120Wb.

Further, the distance between the side wall surface 120Wb and the side wall surface 120W of the groove portion 112a, that is, the so-called groove width is appropriately provided in the X-axis direction. The groove width is set so that the reflective member 103 having the reflective surface 103S, which is parallel to the Y-axis and inclined by 45 ° with respect to the Z-axis surface, can be formed.

Since the conventional semiconductor laser chip does not have a groove portion (groove portion 112a in the first embodiment) on the substrate, the laser light 111 emitted from the laser emission port 101E at an emission angle of ± 30 ° is -30 ° side (Z-axis negative). A part of the laser beam (half of the direction) was kicked on the upper surface of the substrate, causing a loss of light.

On the other hand, in the semiconductor laser chip 110 of the present embodiment, the groove portion 112a is provided on the upper surface 102a of the substrate 102, so that the laser beam 111 is not kicked by the upper surface 102a.
Specifically, the -30 ° side (negative direction side of the Z axis) of the laser light 111 emitted from the laser emission port 101E at an emission angle of ± 30 ° is the reflection surface of the reflection member 103 formed from the groove bottom surface 112ab. Since it is reflected by the 103S, the laser beam 111 is not kicked. As a result, the laser light 111 emitted by the semiconductor laser 101 can be more efficiently sent to the reflecting surface 103S without loss of light.

Further, by providing the groove portion 112a on the upper surface 102a of the substrate 102, the effect of downsizing and lowering the height of the semiconductor laser chip 110 can be obtained.
Specifically, the height of the laser emission port 101E of the laser beam 111 is lowered to reduce the thickness of the semiconductor laser 101 in the Z-axis direction, so that the height of the semiconductor laser chip 110 can be reduced.
Further, the laser light 111, which is the reflected light reflected in the groove 112a, is thinly suppressed to the thickness (Z-axis direction) of the semiconductor laser 101 which is not kicked by the laser emission surface 101C of the semiconductor laser 101, so that the semiconductor laser 101 can be formed. The distance between the laser emitting surface 101C and the reflecting surface 103S of the reflecting member 103 in the X-axis direction can be shortened. Further, by shortening the distance between the laser emitting surface 101C and the reflecting surface 103S in the X-axis direction, the visual field image projected on the reflecting surface 103S can be reduced, so that the reflecting member 103 can be made smaller and shorter. can.
Therefore, in the present embodiment, the substrate 102 is provided with the groove portion 112a, the reflection surface 103S is formed from the groove portion 112a, and the semiconductor laser 101 is made thinner, so that the size is smaller and the height is lower than that of the conventional semiconductor laser chip. You can get the effect of making it.

When the semiconductor laser 101 and the reflecting member 103 are mounted on the same substrate 102, the groove portion 112a is provided on the substrate 102 so that the semiconductor laser 101 and the reflecting member 103 can be mounted on the side wall surface 120Wb of the groove portion 112a and the groove bottom surface. It can be separated by a part of 112ab, so that the heat generated when the semiconductor laser 101 is driven is not easily transferred to the reflection member side 103 side.

Further, the height difference between the upper surface 102a of the substrate 102 and the groove bottom surface 112ab of the groove 112a, that is, the groove depth of the groove 112a is set to the thickness (Z-axis direction) of the substrate 102 including the upper surface 102a and the lower surface 102b of the substrate 102. On the other hand, it is preferably 1/3 to 2/3 times, more preferably deeper than 2/3 with respect to the thickness (Z-axis direction) of the substrate 102.

Therefore, by providing an appropriate groove depth of the groove portion 112a, the heat flow path connecting the semiconductor laser 101 and the reflection member 103 can be reduced by the groove depth, so that the inflow of heat to the reflection member 103 is reduced. However, the effect of suppressing adverse effects such as thermal deformation of the reflective member can be expected.

From the viewpoint of reducing the manufacturing cost of the substrate 102, the height position of the raised portion 109 of the present embodiment is formed at the same height as the upper surface 102a of the substrate 102 on which the semiconductor laser 101 is mounted.
The height of the raised portion 109 and its shape are not limited to the present embodiment. For example, the raised portion 109 is not limited to the same height as the upper surface 102a of the substrate 102 on which the semiconductor laser 101 is mounted, and the shape of the raised portion may be an inclined surface, a curved surface, or the like.

Embodiment 2
FIG. 4 is a cross-sectional view for explaining the semiconductor laser chip 210 according to the second embodiment of the present invention.
The second embodiment is a modification of the substrate with a reflective member of the first embodiment. The material of each member constituting the substrate with the reflective member in the second embodiment is the same as that described in the first embodiment. Further, since the mounting of the semiconductor laser chip 210 on the semiconductor laser package of the second embodiment has the same configuration as that of the first embodiment, the description thereof will be omitted.

Here, the direction of the semiconductor laser chip 210 in the present embodiment is defined. In the state of the semiconductor laser chip 210, the direction of the optical axis 211A of the laser light 211 emitted from the laser ejection port 201E is orthogonal to the X-axis direction and the X-axis direction with respect to the surface on which the semiconductor laser 201 is mounted on the substrate 202. The direction perpendicular to the Z-axis direction is defined as the Z-axis direction, and the direction orthogonal to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.
In the X-axis direction, the emission direction of the laser beam 211 is the positive direction in the X-axis direction, and in the Z-axis direction, the surface side on which the semiconductor laser 201 is mounted on the substrate 202 is the positive direction in the Z-axis direction.
Further, the plane having each axis of the X-axis, the Y-axis, and the Z-axis as a normal is the X-axis plane, the Y-axis plane, and the Z-axis plane.

The substrate 202 has an upper surface 202a, which is the upper surface of the substrate 202, on the negative side of the X-axis, and the cross-sectional shape of the Y-axis surface is rectangular, crossing the upper surface 202a in the Y-axis direction, and a part of the substrate 202 is cut out. It is provided with an L-shaped notch 212a.
The L-shaped notch 212a is composed of a notched bottom surface 212ab which is a bottom surface of the L-shaped notch 212a and a side wall surface 220W which is a side wall of the L-shaped notch 212a. A first step portion 220a including an upper surface 202a and a first step portion 220a is provided. The side wall surface 220Wa is a surface parallel to the X-axis surface, and the notched bottom surface 212ab is a surface parallel to the Z-axis surface.

The notched bottom surface 212ab of the substrate 202 is arranged in the positive direction of the X-axis from the position of the laser emission surface 201C of the semiconductor laser 201 mounted on the substrate 202 and in the negative direction of the X-axis from the side wall surface 220W, and is arranged on the Y-axis. A V-shaped groove portion 212c formed in parallel across the notched bottom surface 212ab of the substrate 202 is provided.
The V-shaped groove portion 212c has a V-shaped cross-sectional shape on the Y-axis surface, and has a side wall surface 220 Wd which is a side wall portion on the negative direction side of the X axis of the substrate 202 and a side wall portion on the positive direction side of the X axis. It is composed of a side wall surface 220 We.
The side wall surface 220Wd is a surface parallel to the X-axis surface, and the side wall surface 220We is a surface inclined in the positive direction of the X-axis with respect to the X-axis surface.
Further, the substrate 202 is arranged in the positive direction of the X-axis from the L-shaped notch 212a, is formed across the substrate 202 in parallel with the Y-axis, and has a rectangular cross-sectional shape on the Y-axis surface. It is provided with an L-shaped notch portion 212b which is notched from a part of the above.
The L-shaped notch 212b is composed of a notched bottom surface 212bb which is a bottom surface of the L-shaped notch 212b and a side wall surface 220Wc which is a side wall of the L-shaped notch 212b. A second step portion 220c including an upper surface 202a, which is the upper surface of the substrate 202, is provided. The side wall surface 220Wc is a surface parallel to the X-axis surface, and the notched bottom surface 212bb is a surface parallel to the Z-axis surface.
Further, the substrate 202 includes a convex portion 209 composed of a first step portion 220a and a second step portion 220c between the L-shaped notch portion 212a and the L-shaped notch portion 212b.
The convex portion 209 is formed across the substrate 202 in parallel with the Y-axis, and the cross-sectional shape of the Y-axis surface is rectangular.
A conductive film 208 is formed on the cutout bottom surface 212ab of the substrate 202, and a conductive bonding film 206a for mounting the semiconductor laser 201 is formed on the conductive film 208 at a predetermined position. Then, the semiconductor laser 201 is mounted on the conductive bonding film 206a.

A reflective member 203 is mounted on the substrate 202.
The reflecting member 203 includes a reflecting surface 203S for reflecting the laser light 211 emitted from the laser emitting port 201E of the semiconductor laser 201, and the reflecting surface 203S is installed so as to face the laser emitting surface 201C of the semiconductor laser 201. ..
The reflection surface 203S has a predetermined angle with respect to the optical axis 211A of the laser light 211, and in the present embodiment, is a surface parallel to the Y axis and inclined by 45 ° with respect to the Z axis surface. The reflective member 203 has a substantially triangular columnar shape having the reflective surface 203S as one surface, and the cross-sectional shape of the Y-axis surface is substantially triangular.

In the reflective member 203, one surface having a substantially triangular columnar shape is a mounting surface on the substrate 202, and the mounting surface covers the L-shaped cutout portion 212a, the convex portion 209, and the L-shaped cutout portion 212b, and is a reflective member. The 203 is mounted on the substrate 202 by fixing its mounting surface to the substrate 202.
Specifically, the reflective member 203 covers the L-shaped cutout portion 212b, the side wall surface 220Wa, the substrate upper surface 202a, the side wall surface 220Wc, and the notch bottom surface 212bb and is fixed to the substrate 202. Is configured to cover the first stepped portion 220a and the second stepped portion 220c on the substrate 202.
That is, the reflective member 203 mounted on the substrate 202 covers and fixes at least a part of the stepped portion of the substrate 202.

Similar to the first embodiment, also in the present embodiment, the reflective member 203 covers and fixes the stepped portion including the notched bottom surface 212ab, the convex portion 209, and the notched bottom surface 212bb of the substrate 202, so that the laser beam 211 is one of the laser beams 211. By absorbing the portion, the heat generated in the reflective member 203 can be efficiently released to the substrate 202.

The contact surface between the reflective member 203 and the cutout bottom surface 212ab is in the positive direction in the X-axis direction from the ridge line where the side wall surface 220We of the V-shaped groove portion 212c and the notch bottom surface 212ab are in contact with each other, and extends to the side wall surface 220Wa of the first step portion 220a. Is between.
In the present embodiment, the end of the contact surface between the reflective member 203 and the notched bottom surface 212ab in the negative direction of the X axis is located on the ridge line where the side wall surface 220We and the notched bottom surface 212ab are in contact with each other.

By providing the V-shaped groove portion 212c, the heat flow path connecting the semiconductor laser 201 and the reflection member 203 can be reduced by the groove depth, so that the heat flow into the reflection member 203 is reduced and the reflection member 203 The effect of suppressing adverse effects such as thermal deformation can be expected.

The laser emission port 201E of the semiconductor laser 201 is provided at a position higher than the notched bottom surface 212ab of the substrate 202 as compared with the first embodiment.
By doing so, it is possible to prevent the laser light 211 emitted from the semiconductor laser 201 at a predetermined emission angle from being kicked on the surface of the notched bottom surface 212ab of the substrate 202 and by the side wall surface 220We of the V-shaped groove portion 212c. ..

Another Embodiment Next, another embodiment of the substrate with a reflective member of the present invention will be described.
FIG. 5 is a perspective view for explaining another embodiment of the substrate with a reflective member according to the present invention. Here, deformation examples of the convex portion 109 of the substrate 102 of the first embodiment are shown in FIGS. 5 (a) to 5 (b), FIGS. 6 (c) to (d), and FIGS. 7 (e) to 7 (f). , Five forms of the stepped portion of the substrate with the reflective member will be described. In addition, in FIGS. 5 to 7, the reflective member is shown as a transparent body in order to clearly show the shape of the substrate.

FIG. 5A is a perspective view in which the convex portion 109 of the substrate 102 is divided into two or more convex portions. The convex portion 109 of the substrate 102 is formed on the upper surface 102a of the substrate 102 across the substrate 102 in parallel with the Y-axis, and includes a split groove portion 112s having a rectangular cross-sectional shape on the Y-axis surface. Side wall surfaces 120Ws and side wall surfaces 120Wt, which are both side surfaces of the split groove portion 112s, are erected, and the bottom portion of the split groove portion 112s is designated as a groove bottom surface 112sb. Further, a stepped portion is formed from the groove bottom surface 112sb, the side wall surface 120Ws, the side wall surface 120Wt, and the upper surface 102a, and at least two or more convex portions 109 are formed by the stepped portion.

In the present embodiment, the convex portion 109 is provided with three split groove portions 112s to form four convex portions 109. Further, the groove widths of the split groove portions 112s are evenly allocated with an appropriate size corresponding to the width of the upper surface 102a of the convex portion 109 in the X-axis direction. The groove depth of the split groove portion 112s is up to the Z-axis plane at the position of the cutout bottom surface 112bb of the L-shaped cutout portion 112b.
The number of split grooves and the shape of the split grooves are not limited to this embodiment, and the number of split grooves may be one or more, and the shape of the split grooves is, for example, a cross section of the Y-axis surface. May have a V-groove shape or a U-shape.
Further, the resin-based material of the reflective member 103 is also filled in the split groove portions 112s without gaps, fixed at the mounting position on the substrate 102 of the reflective member 103, and the reflective member 103 is mounted on the substrate 102 as in the first embodiment. Will be installed in.

FIG. 5 (b) shows a form in which the direction of the split groove portion 112s in the convex portion 109 of FIG. 5 (a) is changed from the Y-axis direction to the X-axis direction, and at least two or more locations as in FIG. 5 (a). The convex portion 109 of the above is formed.
In the present embodiment, the convex portions 109 are provided with four split groove portions 112s to form five convex portions 109. Further, the groove widths of the split groove portions are evenly allocated with an appropriate size corresponding to the width of the upper surface 102a of the convex portion 109 in the Y-axis direction.
It should be noted that the embodiment of FIG. 5A and the embodiment of FIG. 5B may be crossed and provided with a split groove portion intersecting in the Y-axis direction and the X-axis direction.

FIG. 6 (c) is a modified example of the form having a plurality of square columnar convex portions 109 shown in FIG. 5 (b), and is an embodiment in which the convex portions 109 are formed into a columnar shape.
Further, the cross-sectional shape of the raised portion 109 on the Y-axis surface is not limited to a rectangular shape, and the cross-sectional shape of the raised portion 109 may be a polygonal shape or a cross-sectional shape including curves. For example, a stepped convex portion 109st (perspective view 6 (d)) having a staircase shape may be provided on the upper surface 102a of the convex portion 109.
Further, the cross-sectional shape of the Y-axis surface of the stepped portion of the raised portion 109 may be curved at the corner portion of the first stepped portion 120a (a perspective view is shown in FIG. 7 (e)).

The cross section of the convex portion 109 may be inverted by setting the size of the base portion of the convex portion to be smaller than the size of the tip portion of the convex portion in the cross-sectional shape on the Y-axis surface or the X-axis surface. .. FIG. 7 (f) includes a raised portion 109 having an inverted trapezoidal cross-sectional shape on the Y-axis surface. Specifically, the convex portion 109 tilts the side wall surface 120 Wc of the convex portion 109 in the positive direction with respect to the X-axis surface in parallel with the Y-axis, so that the cross section of the Y-axis surface of the convex portion 109 is formed. An inverted trapezoidal convex portion is formed in which the size of the root portion of the protruding portion 109 in the X-axis direction is smaller than the size of the tip portion in the X-axis direction.

By making the size of the root portion smaller than the size of the tip portion of the convex portion 109, an effect similar to that of a barb seen with a fishing hook can be obtained. Due to this effect, the reflective member 103 and the substrate 102 can be more firmly fixed, and the effect of suppressing the reflection member 103 and the substrate 102 from peeling off can be obtained.

In the present invention, the shape of the raised portion, the protruding direction, and the number of raised portions are not limited to the above-described embodiment. Further, the shape of the raised portion may be a raised portion formed in combination with any of the configurations of the first embodiment, the second embodiment, and the other embodiments (a) to (f).

In the present invention, the substrate 102 provided with the convex portion 109 may be formed by molding the substrate 102 and the convex portion separately and joining them with a bonding film such as solder. It is more preferable that they are integrated from the viewpoint of manufacturing cost.

Although the present invention is described in that the substrate 102 and the container 104 are separately formed, the present invention is not limited to this, and the substrate 102 and the container 104 may be integrally formed.

The present invention can be adapted to the recent demands for higher performance, smaller size, lower profile, and improved durability of semiconductor laser chips. For example, the miniaturization of the semiconductor laser chip is also a miniaturization of the substrate, and as a result, the area of the fixed portion between the substrate 102 and the reflective member 103 is reduced, and as a result, the fixing strength of the fixed portion is lowered.
In order to solve such a problem, in order to construct a substrate with a reflective member that maintains sufficient fixing strength in a limited fixed area, a convex portion 109 is provided on the substrate 102, and the convex portion 109 is formed by the reflective member 103. By covering it, the effect of improving the fixing strength can be expected.

Although the present invention has described the semiconductor laser as a light emitting element, the light emitting element is not limited thereto. The light emitting element according to the present invention may be, for example, a light source that emits light such as an LED, an incandescent lamp, a fluorescent lamp, or a halogen lamp.
<Manufacturing method>

Next, the method for manufacturing the substrate with a reflective member of the present invention will be described with reference to FIGS. 8 to 10 by taking the semiconductor laser chip 110 of the first embodiment as an example.
Regarding the configuration of the semiconductor laser chip 110 according to the first embodiment, the reference numerals given to the first embodiment will be described.
Here, a process of manufacturing a plurality of semiconductor laser chips 110 from a large-format substrate wafer will be described. The process is performed in the next STEP.

[STEP1]
FIG. 8 is a diagram for explaining a method for manufacturing a substrate with a reflective member of the present invention, and FIG. 8A is a diagram showing a process of forming a conductive film, a bonding film, and a conductive bonding film on a base slope wafer. , (B) is a diagram showing a step portion forming step.
First, a substrate wafer 102WF made of aluminum nitride (AlN) and having a thickness of about 300 μm is prepared. The substrate wafer 102WF includes a plurality of chip forming regions 102ch corresponding to the semiconductor laser chip 110. The entire surface of the upper surface 102a of the substrate wafer 102WF is provided with a conductive film 108 for transmitting power to the semiconductor laser 101, and the entire surface of the lower surface 102b of the substrate wafer 102WF is provided with a bonding film 102e for fixing the container 104. Form a film. The conductive film 108 and the bonding film 102e are thin films in which titanium-platinum-gold (Ti-Pt-Au) are laminated in this order from the substrate 102 side, and are formed by a sputtering method, a vapor deposition method, or the like. Next, a resist pattern (not shown) is formed on the conductive film 108 by photolithography, and using this resist pattern as a mask, gold-tin solder (Au-Sn) is placed at a predetermined position on the conductive film 108 to which the semiconductor laser 101 is fixed. ) And the like to form a conductive bonding film 106a (FIG. 8 (a)). The conductive bonding film 106a is formed by a sputtering method, a vapor deposition method, or the like.

[STEP2]
Next, a groove portion 112a and a groove portion 112b are formed on the upper surface 102a of the substrate wafer 102WF, and a convex portion 109 is formed by these groove portions.
The groove portion 112a and the groove portion 112b are formed by half-cutting the substrate wafer 102WF by dicing. In the present embodiment, the groove width of the groove portion 112a is 300 μm and the groove depth is 100 μm, and the groove width of the groove portion 112b is 300 μm and the groove depth is 80 μm. The groove portion 112b becomes an L-shaped notch portion 112b when the substrate wafer 102WF is fragmented into each semiconductor laser chip 110 (FIG. 8B).
It is efficient and preferable to process a plurality of the groove portions 112a and 112b at the same time, but apart from this, for example, the groove portions 112a and the groove portions 112b may be processed and formed in a plurality of times.

[STEP3]
9A and 9B are views for explaining a method for manufacturing a substrate with a reflective member of the present invention, FIG. 9C is a diagram in which a mold is placed on a substrate wafer, and FIG. 9D is a diagram on a substrate wafer. It is a figure which formed the reflective member.
The reflective member 103 is formed on the substrate wafer 102WF.
The reflective member 103 is formed by placing a mold 150 on a substrate wafer 102WF (FIG. 9 (c)) and performing a transfer mold (FIG. 9 (d)).

The mold 150 has a recess 150a corresponding to the outer shape of the reflective member 103. The mold 150 is placed on the substrate wafer 102WF so that the concave portion 150a covers the convex portion 109.
The positioning reference surface for mounting the mold 150 on the substrate wafer 102WF is the upper surface of the substrate wafer 102WF and the side wall surface 120Wb of the groove 112a.
After the mold 150 is placed on the substrate wafer 102WF, a resin-based material containing a filler constituting the reflective member 103 is provided in a space (recessed portion 150a) formed between the substrate wafer 102WF and the mold 150 (hereinafter referred to as a resin material). , Called a resin), and the resin is heat-cured. After that, the mold 150 is removed.

The method of forming the reflective member 103 will be specifically described below.
The reflective member 103 covers at least a part of the first step portion 120a and the third step portion 120c forming the convex portion 109 of the base slope wafer 102WF, and is fixed to the base slope wafer 102WF.
Here, the reflective member 103 is formed from the groove bottom surface 112ab of the groove portion 112a, and the maximum height of the reflective member 103 in the Z-axis direction is 300 μm from the upper surface 102a of the substrate wafer 102WF, and the maximum height of the reflective member 103 in the X-axis direction. The length is 400 μm.

[STEP4]
10A and 10B are views for explaining a method for manufacturing a substrate with a reflective member of the present invention, FIG. 10E is a diagram showing a process of individualizing a substrate wafer, and FIG. 10F is a diagram in which a semiconductor laser is mounted. It is a figure which shows the process to perform.
The substrate wafer 102WF is diced and individualized using a dicing blade (not shown) along the dicing line 102DL that divides a plurality of chip forming regions 102ch on the substrate wafer 102WF (FIG. 10 (e)). This forms the substrate 102 with the reflective member 103.

[STEP5]
The semiconductor laser 101 is mounted on the substrate 102 with the individualized reflective member 103.
The semiconductor laser 101 is placed on the conductive bonding film 106a on the substrate 102 with the reflective member 103 at a position where the laser emitting surface 101C faces the reflective member 103, and is fixed on the upper surface 102a of the substrate 102 by reflowing. (Fig. 10 (f)).

Here, the semiconductor laser 101 mounts the upper surface 102a of the substrate 102 on which the conductive bonding film 106a is formed and the side wall surface 120Wb of the groove 112a as positioning reference surfaces.
By sharing the reference surface between the semiconductor laser 101 and the mold 150 as the upper surface 102a of the substrate 102 and the side wall surface 120Wb of the groove 112a, the position of the reflecting member 103 with respect to the semiconductor laser 101 is higher than in the case where it is not shared. It can be kept accurate. Therefore, the effect of suppressing the axis deviation of the optical axis 111A in the reflected light of the laser light 111 can be expected, and a high-quality semiconductor laser chip 110 can be manufactured.
Further, the manufacturing method of the present embodiment is different from the conventional manufacturing method in which the bar-shaped reflective member is fixed on the substrate by forming the reflective member by molding on the substrate, and the stepped portion as in the present invention is formed. In addition to being able to easily form reflective members on the substrate to be held, the reflective members on the wafer substrate can be collectively formed, which is excellent in mass productivity.

Further, the reflective surface of the reflective member can be concave and has a complicated shape such as a curved surface, and the fixed portion of the reflective member with the substrate can also have a complicated shape. Such a complicated shape can be easily manufactured by the method of forming the reflective member by molding.
In the present embodiment, the steps are carried out in the order of STEP4 and STEP5, but the order is not limited to this, and for example, STEP4 and STEP5 may be exchanged in the order of steps.

[STEP6]
With the above, the semiconductor laser chip 110 is completed.

Next, another embodiment of the method for manufacturing a substrate with a reflective member of the present invention will be described with reference to FIGS. 11 to 13 by taking the semiconductor laser chip 210 of the second embodiment as an example.
Regarding the configuration of the semiconductor laser chip 210 according to the second embodiment, the reference numerals given to the second embodiment will be described.
Here, a process of manufacturing a plurality of semiconductor laser chips 210 from a large-format substrate wafer will be described. The process is performed in the next STEP.

[STEP1]
11A and 11B are views for explaining the manufacturing method of the substrate with a reflective member of the present invention, FIG. 11A is a diagram showing a step portion forming process, and FIG. 11B is a conductive film and bonded to a base slope wafer. It is a figure which shows the forming process of a film and a conductive bonding film.
First, a substrate wafer 202WF made of aluminum nitride (AlN) and having a thickness of about 300 μm is prepared. The substrate wafer 202WF includes a plurality of chip forming regions 202ch corresponding to the semiconductor laser chip 210.

A groove portion 212a and a groove portion 212b are formed on the upper surface 202a of the substrate wafer 202WF, and a convex portion 209 is formed by these groove portions.
The groove portion 212a and the groove portion 212b are formed by half-cutting the substrate wafer 202WF by dicing. In the present embodiment, the groove width of the groove 212a is 2250 μm and the groove depth is 100 μm, and the groove width of the groove 212b is 300 μm and the groove depth is 80 μm (FIG. 11A).

The groove portion 212a and the groove portion 212b become an L-shaped notch portion 212a and an L-shaped notch portion 212b when the substrate wafer 202WF is separated into each semiconductor laser chip 210.
It is efficient and preferable to process a plurality of the groove portions 212a and 212b at the same time, but separately, for example, the groove portions 212a and the groove portions 212b may be processed and formed in a plurality of times.

[STEP2]
Next, a conductive film 208 for transmitting power to the semiconductor laser 201 is formed on the entire surface of the groove bottom surface 212ab of the groove portion 212a of the substrate wafer 202WF, and a bonding film 202e is formed on the entire surface of the lower surface 202b of the substrate wafer 202WF. Membrane. The conductive film 208 and the bonding film 202e are, for example, thin films in which titanium-platinum-gold (Ti-Pt-Au) are laminated in this order from the substrate 202 side, and are formed by a sputtering method, a vapor deposition method, or the like. Next, a resist pattern (not shown) is formed on the conductive film 208 by photolithography, and using this resist pattern as a mask, gold-tin solder (Au-Sn) is placed at a predetermined position on the conductive film 208 where the semiconductor laser 201 is fixed. ) And the like to form a conductive bonding film 206a (FIG. 11 (b)). The conductive bonding film 206a is formed by a sputtering method, a vapor deposition method, or the like.

[STEP3]
FIG. 12 is a diagram for explaining a method for manufacturing a substrate with a reflective member of the present invention, and FIG. 12 (c) is a diagram in which a resin-based material for forming a reflective member 203 is applied on a wafer for a substrate. (D) is a diagram in which a reflective member is formed on a substrate wafer by grinding.

The reflective member 203 is formed on the substrate wafer 202WF.
The reflective member 203 is premolded by applying a resin-based material (hereinafter, referred to as a resin) containing a filler constituting the reflective member 203 to a substrate wafer 202WF by screen printing, and thermosetting the resin. The body 203P is formed (FIG. 12 (c)). The preformed body 203P is ground to form the reflective member 203. At the same time as molding the reflective member 203, a V-shaped groove portion 212c is formed on the notched bottom surface 212ab of the base slope wafer 202WF (FIG. 12 (d)).

The method of forming the reflective member 203 and the V-shaped groove portion 212c will be specifically described below.
A screen mask for screen printing is placed on the substrate wafer 202WF, and the resin constituting the reflective member 203 is placed on the screen mask. Next, the resin on the screen mask is spread with a squeegee, and the resin having a predetermined shape pattern is transferred onto the base slope wafer 202WF. After that, by thermosetting the resin on the wafer 202WF for the base slope, the cross-sectional shape of the Y-axis surface is a semicircle and a substantially rectangular shape parallel to the Y-axis direction. 203P is formed on the substrate wafer 202WF (FIG. 12 (c)).

The preformed body 203P, which is the source of the reflective member 203, covers at least a part of the first step portion 220a and the second step portion 220c forming the convex portion 209 of the base slope wafer 202WF, and covers at least a part of the base slope wafer 202WF. Is fixed to.
Subsequently, the preformed body 203P is machined into the shape of the reflective member 203 using a grinding machine. In this way, the reflective member 203 is formed. Further, when the reflecting surface 203S of the reflecting member 203 is processed, a V-shaped groove portion 212c is formed on the notched bottom surface 212ab of the base slope wafer 202WF at the same time. The side wall surface 220 Wd of the V-shaped groove portion 212c is formed so as to be a surface parallel to the X-axis surface of the substrate 202 (FIG. 12 (d)). Further, by grinding the reflective surface 203S and the V-shaped groove portion 212c, the notched bottom surface 212ab of the substrate wafer 202WF and the side wall surface 220Wd of the V-shaped groove portion 212c serve as a positioning reference surface when the semiconductor laser 210 is placed. Become.

[STEP4]
13A and 13B are views for explaining a method for manufacturing a substrate with a reflective member of the present invention, FIG. 13E is a diagram showing a process of individualizing a wafer for a substrate, and FIG. It is a figure which shows the process to perform.
The substrate wafer 202WF is diced and individualized using a dicing blade (not shown) along the dicing line 202DL that divides a plurality of chip forming regions 202ch on the substrate wafer 202WF (FIG. 13 (e)). This forms the substrate 202 with the reflective member 203.

[STEP5]
The semiconductor laser 201 is mounted on the substrate 202 with the individualized reflective member 203.
The semiconductor laser 201 is placed on the conductive bonding film 206a on the substrate 202 with the reflecting member 203 at a position where the laser emitting surface 201C faces the reflecting member 203, and is fixed on the upper surface 202a of the substrate 202 by reflowing. (FIG. 13 (f)).

Here, the semiconductor laser 201 mounts the notched bottom surface 212ab of the substrate 202 on which the conductive bonding film 206a is formed and the side wall surface 220Wd of the V-shaped groove portion 212c as positioning reference surfaces.
By sharing the positioning reference surface on which the semiconductor laser 201 is placed and the positioning reference surface consisting of the side wall surface 220 Wd of the V-shaped groove portion 212c, the position of the reflecting member 203 with respect to the semiconductor laser 201 is compared with the case where the semiconductor laser 201 is not shared. Can be kept highly accurate. Therefore, the effect of suppressing the misalignment of the optical axis 211A in the reflected light of the laser light 211 can be expected, and a high-quality semiconductor laser can be manufactured.

Further, the manufacturing method of the present embodiment is different from the conventional manufacturing method in which the bar-shaped reflective member is fixed on the substrate by forming the reflective member by molding on the substrate, and the stepped portion as in the present invention is formed. In addition to being able to easily form reflective members on the substrate to be held, the reflective members on the wafer substrate can be collectively formed, which is excellent in mass productivity.
In the present embodiment, the steps are carried out in the order of STEP4 and STEP5, but the order is not limited to this, and for example, STEP4 and STEP5 may be exchanged in the order of steps.

[STEP6]
With the above, the semiconductor laser chip 210 is completed.

In the manufacturing method of the embodiment of the present invention, the surface roughness of the reflective surface of the reflective member affects the reflectance, and therefore a flat mirror surface is preferable. For example, when a reflective surface is formed by injection molding using mold molding, grinding, or the like, the reflective surface secures a mirror surface. The surface of the reflective surface has a surface roughness Ra of 40 nm or less, more preferably a surface roughness Ra of 10 nm or less.

Further, in the manufacturing method of the embodiment of the present invention, by providing the protruding portions 109 to 209, the fixed area between the substrate 102 to 202 and the reflecting member 103 to 203 is increased, and the fixing portion is peeled off at the boundary surface of the fixed portion. Is generated and becomes difficult, so it has a suitable function in grinding or dicing in the manufacturing process.

Although the method for manufacturing the substrate and the substrate of the present invention has been described above based on the embodiment, the method for producing the substrate and the substrate of the present invention is not limited to the present embodiment, and each configuration has the same function. It can be replaced with any configuration. Further, any other configuration may be added to the present invention.

100 Semiconductor laser package 101 Semiconductor laser 101a Upper surface 101b Lower surface 101n Electrode film 101p Electrode film 101C Laser emission surface 101E Laser emission port 102 Substrate 102a Upper surface 102b Lower surface 102e Bonding film 102ch Chip formation area 102DL Dicing line 102WF Substrate wafer 103 Reflecting member 103S Reflection Surface 104 Container 104a Recess 104b Bottom 104bb Bottom 104b A Mounting area 104c Wall 104e Bonding film 104f End face 104g Bonding film 105 Transparent lid 106a Conductive bonding film 108 Conductive film 108 Conductive 109 Convex part 109st Stepped convex part 110 Semiconductor laser chip 111 Laser light 111A Optical shaft 112a Groove 112ab Groove bottom 112b L-shaped notch (groove)
112bb Notch bottom surface 112s Split groove portion 112sb Groove bottom surface 120a First step portion 120b Second step portion 120c Third step portion 120Ws Side wall surface 120Wt Side wall surface 120W Side wall surface 120Wb Side wall surface 120Wc Side wall surface 150 Mold 150a Recession 201 Semiconductor laser 201C Laser emission Surface 201E Laser emission port 202 Substrate 202a Upper surface 202ch Chip formation area 202e Bonding film 202DL Dicing line 202WF Substrate wafer 203 Reflecting member 203P Preformed body 203S Reflecting surface 206a Conductive bonding film 208 Conductive film 209 Projection part 210 Semiconductor laser chip 211 Laser light 211A Optical axis 212a L-shaped notch (groove)
212ab Notch bottom surface 212b L-shaped notch (groove)
212bb Notched bottom surface 212c V-shaped groove 220a First step 220c Second step 220W Side wall surface 220Wc Side wall surface 220Wd Side wall surface 220W Side wall surface 900 Semiconductor laser package 901 Semiconductor laser 901E Laser emission port 902 Substrate 902ch Chip formation area 902WF Substrate Wafer 902DL Dicing line 903 Reflecting member 903S Reflecting surface 904 Container 905 Transparent lid 906a Bonding film 906b Bonding film 910 Semiconductor laser chip 911 Laser light 915a Wire 915b Wire

Claims (7)

In a substrate having a light emitting element mounting portion and a substrate with a reflective member having a reflective member on the substrate,
The thermal conductivity of the substrate is higher than the thermal conductivity of the reflective member.
A step portion is formed on the substrate, and the reflective member covers and fixes at least a part of the step portion and is fixed.
The substrate, the substrate with the reflecting member characterized in that it comprises a groove having a side wall surface disposed on the reflecting surface on the same plane of the reflecting member between the reflecting member and the light emitting element mounting portion of the substrate ..
The substrate with a reflective member according to claim 1, wherein the stepped portion of the substrate is provided at one or a plurality of locations. The substrate with a reflective member according to claim 1 or 2, wherein a groove is formed in the substrate, and the step portion is formed by the groove. The substrate with a reflective member according to claim 3, wherein at least a part of the reflective member is fixed to the bottom surface of the groove portion of the substrate. The substrate with a reflective member according to any one of claims 1 to 4 , wherein the stepped portion of the substrate forms a convex portion protruding from the surface of the substrate. In a method for manufacturing a substrate with a reflective member, which comprises a substrate having a light emitting element mounting portion and a reflective member on the substrate, and the thermal conductivity of the substrate is higher than the thermal conductivity of the reflective member.
A step of forming a step portion on the substrate and a step of fixing a material constituting the reflective member to the substrate so as to cover at least a part of the step portion.
The material is processed to form the reflective surface of the reflective member, and at the same time, the groove between the light emitting element mounting portion of the substrate and the reflective member is provided with a side wall surface on the same surface as the reflective surface. A method for manufacturing a substrate with a reflective member, which comprises a step of forming a substrate. The steps of fixing the material constituting the reflective member to the substrate include a step of placing a mold having a recess on the substrate so that the recess covers the step portion, and a step of placing the material constituting the reflective member on the recess. The method for manufacturing a substrate with a reflective member according to claim 6, further comprising a step of filling and curing the substrate.

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