JP6879461B2 - Thin-film mask, thin-film mask with frame, thin-film mask preparation, method for manufacturing organic semiconductor elements, and method for manufacturing organic EL display - Google Patents

Description

The embodiments of the present disclosure relate to a thin-film deposition mask, a thin-film deposition mask with a frame, a thin-film deposition mask preparation body, a method for manufacturing an organic semiconductor element, and a method for manufacturing an organic EL display.

In the formation of a thin-film deposition pattern using a thin-film deposition mask, a thin-film deposition mask provided with an opening corresponding to the pattern to be deposited is usually brought into close contact with an object to be deposited, and a thin-film deposition material discharged from the thin-film deposition source is passed through the opening. , It is performed by adhering to the object to be vapor-deposited. Further, the vapor deposition mask is often fixed to a frame and used as a vapor deposition mask with a frame.

Examples of the vapor deposition mask used for forming the vapor deposition pattern include a resin mask having a resin mask opening corresponding to the pattern to be vapor-deposited and a metal mask having a metal mask opening (sometimes referred to as a slit). A vapor deposition mask (for example, Patent Document 1) formed by laminating and the like is known.

Japanese Patent No. 5288072

The main object of the embodiments of the present disclosure is to provide a thin-film deposition mask or the like capable of forming a high-definition thin-film deposition pattern.

The vapor deposition mask according to the embodiment of the present disclosure includes a metal mask provided with a metal mask opening and a resin mask provided with a resin mask opening corresponding to a pattern to be vapor-deposited at a position overlapping the metal mask opening. The resin mask contains silicon compound particles having an average particle size of 50 nm or more and 200 nm or less.
The vapor deposition mask according to the embodiment of the present disclosure includes a metal mask provided with a metal mask opening and a resin mask provided with a resin mask opening corresponding to a pattern to be vapor-deposited at a position overlapping the metal mask opening. Is a vapor deposition mask in which and is laminated, and the resin mask contains silicon compound particles.

In the vapor deposition mask, the content of the silicon compound particles in the resin mask may be less than 30% by weight.

In the vapor deposition mask, the content of the silicon compound particles in the resin mask may be 2% by weight or more and 15% by weight or less.

In the vapor deposition mask, the average particle size of the silicon compound particles may be 50 nm or more and 200 nm or less.

In the vapor deposition mask, the silicon compound particles may be silicon dioxide particles.

The thin-film deposition mask with a frame according to another embodiment of the present disclosure is a thin-film deposition mask with a frame including a frame and a thin-film deposition mask fixed to the frame, and the thin-film deposition mask is the embodiment of the present disclosure. It is a thin-film deposition mask.

Further, the vapor deposition mask preparation body according to another embodiment of the present disclosure includes a metal mask provided with a metal mask opening and a resin mask opening corresponding to a pattern for vapor deposition at a position overlapping the metal mask opening. A vapor deposition mask preparatory body for obtaining a vapor deposition mask obtained by laminating a resin mask provided with the above, wherein the vapor deposition mask preparation body is a resin before the metal mask and the resin mask opening are formed. are those layers are laminated, the pre Bark fat layer, the average particle diameter is contained 200nm or less of the silicon compound particles than 50nm.

Further, the method for manufacturing an organic semiconductor element according to another embodiment of the present disclosure includes a thin-film deposition pattern forming step of forming a thin-film deposition pattern on a thin-film deposition object using a thin-film deposition mask, and is used in the thin-film deposition pattern forming step. The thin-film deposition mask is the thin-film deposition mask according to the embodiment of the present disclosure, or the thin-film deposition mask with a frame according to the embodiment of the present disclosure.

Further, as the method for manufacturing an organic EL display according to another embodiment of the present disclosure, an organic semiconductor device manufactured by the method for manufacturing an organic semiconductor device according to the embodiment of the present disclosure is used.

According to the vapor deposition mask and the like of the present disclosure, a high-definition vapor deposition pattern can be formed.

(A) is a schematic cross-sectional view showing an example of the vapor deposition mask according to the embodiment of the present disclosure, and (b) is an example when the vapor deposition mask according to the embodiment of the present disclosure is viewed in a plan view from the surface side of the resin mask. It is a front view which shows. It is a front view which shows an example of the vapor deposition mask with a frame which concerns on embodiment of this disclosure. It is a front view which shows an example of the vapor deposition mask with a frame which concerns on embodiment of this disclosure. (A) to (c) are front views showing an example of the frame according to the embodiment of the present disclosure. It is a figure which shows an example of the device which has an organic EL display.

Hereinafter, embodiments of the present invention will be described with reference to drawings and the like. It should be noted that the present invention can be implemented in many different modes and is not construed as being limited to the description of the embodiments illustrated below. Further, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited. Further, in the specification of the present application and each of the drawings, the same elements as those described above with respect to the above-described drawings may be designated by the same reference numerals, and detailed description thereof may be omitted as appropriate. Further, for convenience of explanation, the explanation will be made using terms such as upper or lower, but the vertical direction may be reversed. The same applies to the left-right direction.

<Evaporation mask>
FIG. 1A is a front view showing an example of the vapor deposition mask according to the embodiment of the present disclosure viewed from the metal mask side in a plan view, and FIG. 1B is AA of FIG. 1A. It is a schematic cross-sectional view of a part. A part of the vapor deposition mask in FIG. 1B near the center is omitted.

As shown in FIG. 1, the vapor deposition mask 100 according to the embodiment of the present disclosure includes a resin mask 20 having a plurality of resin mask openings 25 corresponding to patterns to be vapor-deposited, and a metal mask 10 having a metal mask opening 15. Is a vapor deposition mask 100 in which the resin mask opening 25 and the metal mask opening 15 are laminated so as to overlap each other.

In the illustrated form, the opening shape of the resin mask opening 25 and the metal mask opening 15 is rectangular, but the opening shape is not particularly limited, and the resin mask opening 25 and the metal mask opening 15 are not particularly limited. The opening shape of the above may be a rhombus, a polygonal shape, or a shape having a curvature such as a circle or an ellipse. It can be said that the rectangular or polygonal opening shape is a preferable opening shape of the resin mask opening 25 in that the light emitting area can be increased as compared with the opening shape having a curvature such as a circle or an ellipse.

(Resin mask)
The resin material that is the main material of the resin mask 20 that constitutes the vapor deposition mask 100 shown in FIG. 1 is not limited, and a high-definition resin mask opening 25 can be formed by laser processing or the like. It is preferable to use a lightweight material having a small rate of change and moisture absorption. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, and ethylene-. Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylate copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin and the like. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a hygroscopicity of 1.0% or less is preferable, and a resin material having both of these conditions is particularly preferable. By using the resin mask using this resin material, the dimensional accuracy of the resin mask opening 25 can be improved, and the dimensional change rate and the moisture absorption rate with heat and aging can be reduced.

The resin mask 20 constituting the vapor deposition mask 100 according to the embodiment of the present disclosure is characterized by containing silicon compound particles. As a result, when a resin layer (or resin film) is formed on the metal plate by coating and then the metal mask opening 15 is formed by etching the metal plate, the metal mask opening 15 and the metal mask opening 15 are formed in the resin layer. It is possible to suppress the occurrence of wrinkles and the like in the overlapping places.

Examples of the silicon compound used as the material of the silicon compound particles include silicon monoxide, silicon dioxide, silicon carbide, silicon nitride, silicic acid, silicate, organosilicon compound, and silicon resin, and silicon dioxide is particularly used. It is preferable to have.

The content of the silicon compound particles in the resin mask 20 is not particularly limited, but is preferably 15% by weight or less in order to enable the formation of the high-definition resin mask opening 25 by laser processing or the like. Further, in order to further improve the suppression of wrinkles and the like of the resin mask 20, the content of the silicon compound particles is preferably 2% by weight or more, and the white turbidity of the resin mask 20 due to the inclusion of the silicon compound particles is caused. When suppressed, the content of the silicon compound particles is preferably less than 30% by weight. The content of the silicon compound particles is particularly preferably 2% by weight or more and 10% by weight or less. The particle size of the silicon compound particles is also not particularly limited, but the average particle size of the silicon compound particles is preferably 50 nm or more, and preferably 200 nm or less.

The thickness of the resin mask 20 is not particularly limited, but when the effect of suppressing the generation of shadows is further improved, the thickness of the resin mask 20 is preferably 25 μm or less, and more preferably less than 10 μm. The preferable range of the lower limit value is not particularly limited, but when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and less than 10 μm, more preferably 4 μm or more and 8 μm or less, the influence of shadows when forming a high-definition pattern exceeding 400 ppi can be more effectively prevented. .. Further, the resin mask 20 and the metal mask 10 described later may be directly bonded or may be bonded via an adhesive layer, but the resin mask 20 and the metal mask may be bonded via the adhesive layer. When the 10 is joined, the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is preferably within the above-mentioned preferable thickness range. The shadow is a target vapor deposition when a part of the vapor deposition material discharged from the vapor deposition source collides with the metal mask opening or the inner wall surface of the resin mask opening and does not reach the vapor deposition target. It refers to a phenomenon in which an undeposited portion having a film thickness thinner than the film thickness occurs.

The cross-sectional shape of the resin mask opening 25 is also not particularly limited, and the facing end faces of the resin masks forming the resin mask opening 25 may be substantially parallel to each other. However, as shown in FIG. 1 (b), the resin It is preferable that the mask opening 25 has a cross-sectional shape that spreads toward the vapor deposition source. In other words, it is preferable to have a tapered surface that spreads toward the metal mask 10 side. The taper angle can be appropriately set in consideration of the thickness of the resin mask 20, etc., but the straight line connecting the lower bottom tip of the resin mask opening, the upper bottom tip of the resin mask opening, and the resin mask. The angle formed by the bottom surface, in other words, the surface of the inner wall surface of the resin mask opening 25 and the surface of the resin mask 20 on the side not in contact with the metal mask 10 in the thickness direction cross section of the inner wall surface constituting the resin mask opening 25 (not shown). The angle formed with the lower surface of the resin mask) is preferably in the range of 5 ° or more and 85 ° or less, more preferably in the range of 15 ° or more and 75 ° or less, and 25 ° or more and 65 ° or more. It is more preferably in the range of ° or less. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used. Further, in the illustrated form, the end face forming the resin mask opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, the resin mask opening. The overall shape of 25 may be a bowl shape. Further, the opposite, that is, an inwardly convex curved shape may be obtained.

(Metal mask)
As shown in FIG. 1 (b), the metal mask 10 is laminated on one surface of the resin mask 20. The metal mask 10 is made of metal, and a metal mask opening 15 extending in the vertical direction or the horizontal direction is arranged. The arrangement example of the metal mask openings is not particularly limited, and the metal mask openings extending in the vertical direction and the horizontal direction may be arranged in a plurality of rows in the vertical direction and the horizontal direction, and the metal mask openings extending in the vertical direction may be arranged. The portions may be arranged in a plurality of rows in the horizontal direction, and the metal mask openings extending in the lateral direction may be arranged in a plurality of rows in the vertical direction. Further, only one row may be arranged in the vertical direction or the horizontal direction. The "vertical direction" and "horizontal direction" referred to in the present specification refer to the vertical direction and the horizontal direction of the drawing, and are any of the longitudinal direction and the width direction of the vapor deposition mask, the resin mask, and the metal mask. You may. For example, the longitudinal direction of the vapor deposition mask, the resin mask, and the metal mask may be the “vertical direction”, and the width direction may be the “vertical direction”. Further, in the specification of the present application, the case where the vapor deposition mask is rectangular in a plan view is described as an example, but other shapes such as a circular shape and a polygonal shape such as a rhombus are described. May be. In this case, the longitudinal direction, the radial direction, or an arbitrary direction of the diagonal line is defined as the "longitudinal direction", and the direction orthogonal to this "longitudinal direction" is referred to as the "width direction (sometimes referred to as the lateral direction)". do it.

The material of the metal mask 10 is not particularly limited, and conventionally known materials in the field of vapor deposition masks can be appropriately selected and used, and examples thereof include metal materials such as stainless steel, iron-nickel alloys, and aluminum alloys. .. Among them, the Invar material, which is an iron-nickel alloy, can be preferably used because it is less deformed by heat.

The thickness of the metal mask 10 is also not particularly limited, but in order to prevent the generation of shadows more effectively, it is preferably 100 μm or less, more preferably 50 μm or less, and more preferably 35 μm or less. Especially preferable. If it is thinner than 5 μm, the risk of breakage and deformation increases and handling tends to be difficult.

Further, in the form shown in FIG. 1A, the opening shape when the metal mask opening 15 is viewed in a plan view is rectangular, but the opening shape is not particularly limited, and the opening of the metal mask opening 15 is limited. The shape may be any shape such as a trapezoidal shape or a circular shape.

The cross-sectional shape of the metal mask opening 15 formed in the metal mask 10 is also not particularly limited, but as shown in FIG. 1 (b), it may have a shape that spreads toward the vapor deposition source. preferable. More specifically, the angle formed by the straight line connecting the lower bottom tip of the metal mask opening and the upper bottom tip of the metal mask opening 15 and the bottom surface of the metal mask 10, in other words, the metal mask opening. In the thickness direction cross section of the inner wall surface constituting the portion 15, the angle formed by the inner wall surface of the metal mask opening 15 and the surface of the metal mask 10 in contact with the resin mask 20 (in the illustrated embodiment, the lower surface of the metal mask) is It is preferably in the range of 5 ° or more and 85 ° or less, more preferably in the range of 15 ° to 80 °, and further preferably in the range of 25 ° or more and 65 ° or less. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used.

<Manufacturing method of thin-film mask>
Hereinafter, a method for manufacturing a vapor-deposited mask according to the embodiment of the present disclosure will be described with an example. In the vapor deposition mask 100 of the present disclosure, a metal plate with a resin layer having a resin layer (or resin film) formed on one surface of the metal plate is prepared, and a metal mask opening 15 is formed in the metal plate with the resin layer. By doing so, a metal mask with a resin layer on which the metal mask 10 is laminated is obtained, and the metal mask with the resin layer is irradiated with a laser from the metal mask 10 side through the metal mask opening 15 to deposit the metal mask on the resin layer. It can be obtained by forming the resin mask opening 25 corresponding to the pattern to be used. As the resin layer formed on one surface of the metal plate, the material described in the resin mask 20 can be used, and this resin layer contains silicon compound particles. Further, as the metal plate in which the resin layer is formed on one surface of the metal plate, the material described in the metal mask 10 can be used.

As a method for producing a metal plate with a resin layer, a resin layer finally to be a resin mask can be formed on the metal plate by a conventionally known coating method or the like. For example, in the case of the resin mask according to the embodiment of the present disclosure, any component added as needed, such as the resin mask material and silicon compound particles described above, may be dispersed or dissolved in an appropriate solvent. A resin for obtaining the resin mask 20 according to the embodiment of the present disclosure by preparing a coating liquid for a resin layer, coating and drying the coating liquid on a metal plate using a conventionally known coating means. Can be layers.

As a method for forming a metal mask with a resin layer in which a metal mask 10 having a metal mask opening 15 provided on one surface of the resin layer is laminated, the surface of the metal plate with a resin layer on the side not in contact with the resin layer is formed. By applying a masking member, for example, a resist material, exposing a predetermined portion, and developing the masking member, a resist pattern is formed in which the position where the metal mask opening 15 is finally formed is left. As the resist material used as the masking member, a resist material having good processability and desired resolution is preferable. Next, using this resist pattern as an etching-resistant mask, etching is performed from the side of the metal plate with a resin layer that does not come into contact with the resin layer by an etching method. After the etching is completed, the resist pattern is washed and removed. As a result, a metal mask with a resin layer in which a metal mask 10 having a metal mask opening 15 provided on one surface of the resin layer is laminated can be obtained. By containing the silicon compound in the resin layer, it is possible to prevent wrinkles and the like from being generated in the resin layer at this time. When the resin layer has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin layer, but when the resin layer does not have resistance to the etching material of the metal plate. It is necessary to coat the surface of the resin layer with a masking member. Further, in the above description, the resist material has been mainly described as the masking member, but instead of applying the resist material, a dry film resist may be laminated and the same patterning may be performed.

As a method for forming the resin mask opening 25, the metal mask with the resin layer prepared above is penetrated through the resin layer by using a laser processing method, precision press processing, photolitho processing, or the like, and vapor deposition is produced on the resin layer. By forming the resin mask opening 25 corresponding to the pattern to be formed, the metal mask opening 15 is provided on one surface of the resin mask 20 provided with the resin mask opening 25 corresponding to the pattern to be produced by vapor deposition. The vapor deposition mask 100 of one embodiment in which the metal mask 10 is laminated is obtained. From the viewpoint that the high-definition resin mask opening 25 can be easily formed, it is preferable to use a laser processing method for forming the resin mask opening 25.

Further, the metal mask with the resin layer may be fixed to the frame before the resin mask opening 25 is formed in the resin layer. The position accuracy can be remarkably improved by providing the resin mask opening 25 later on the metal mask with the resin layer fixed to the frame instead of fixing the completed vapor deposition mask to the frame. .. When the completed vapor deposition mask 100 is fixed to the frame, the metal mask whose opening has been determined is fixed while being pulled with respect to the frame, so that the opening position coordinate accuracy is lowered. The method of fixing the frame 60 to the thin-film deposition mask with a resin layer is also not particularly limited, and the frame 60 can be fixed by spot welding, adhesive, screwing, or any other method for fixing by laser light or the like.

<Evaporation mask with frame>
The thin-film deposition mask 200 with a frame according to the embodiment of the present disclosure has a configuration in which the thin-film deposition mask 100 according to each embodiment of the present disclosure described above is fixed to the frame 60. The description of the vapor deposition mask 100 will be omitted.

As shown in FIG. 2, the thin-film deposition mask 200 with a frame may have one vapor deposition mask 100 fixed to the frame 60, and as shown in FIG. 3, a plurality of thin-film deposition masks 100 are attached to the frame 60. May be fixed.

The frame 60 is a frame member having a substantially rectangular shape, and has a through hole for exposing the resin mask opening 25 provided in the resin mask 20 of the vapor deposition mask 100 to be finally fixed to the vapor deposition source side. Examples of the frame material include a metal material, a glass material, a ceramic material, and the like.

The thickness of the frame is also not particularly limited, but is preferably within the range of 10 mm or more and 30 mm or less from the viewpoint of rigidity and the like. The width between the inner peripheral end surface of the opening of the frame and the outer peripheral end surface of the frame is not particularly limited as long as the width can fix the frame and the metal mask of the vapor deposition mask, and is, for example, 10 mm or more and 70 mm or less. It is within the range.

Further, as shown in FIGS. 4A to 4C, a frame 60 in which a reinforcing frame 65 or the like is provided in a region of a through hole of the frame may be used. In other words, the opening of the frame 60 may have a structure divided by a reinforcing frame or the like. By providing the reinforcing frame 65, the frame 60 and the vapor deposition mask 100 can be fixed by using the reinforcing frame 65. Specifically, when a plurality of the vapor deposition masks 100 described above are arranged side by side in the vertical direction and the horizontal direction and fixed, the vapor deposition mask 100 can be fixed to the frame 60 even at a position where the reinforcing frame and the vapor deposition mask overlap. it can.

The method of fixing the frame 60 and the vapor deposition mask 100 is also not particularly limited, and the frame 60 can be fixed by spot welding, adhesive, screwing, or any other method for fixing by laser light or the like.

<Evaporation mask preparation body>
Next, the vapor deposition mask preparation according to the embodiment of the present disclosure will be described. The vapor deposition mask preparation body (not shown) according to the embodiment of the present disclosure is a resin mask opening corresponding to a pattern formed by vapor deposition at a position where the metal mask 10 on which the metal mask opening 15 is formed overlaps with the metal mask opening. It is used to obtain a vapor deposition mask in which a resin mask 20 on which 25 is formed is laminated, and the resin layer is characterized by containing silicon compound particles.

The vapor deposition mask preparation body according to the embodiment of the present disclosure is common to the vapor deposition mask 100 described above except that the resin mask opening 25 is not provided in the resin layer, and specific description thereof will be omitted. As a specific configuration of the vapor deposition mask preparatory body according to the embodiment of the present disclosure, a metal mask with a resin layer described in the above method for manufacturing a vapor deposition mask can be mentioned.

<Verification method for containing silicon compound particles>
Next, a method for verifying whether or not a certain vapor deposition mask, a vapor deposition mask with a frame, or a resin mask or a resin layer constituting the vapor deposition mask preparation body contains silicon compound particles will be described. First, a desired amount of resin is obtained by cutting out a part of the resin mask constituting the vapor deposition mask to be verified or the vapor deposition mask with a frame, or a part of the resin layer constituting the vapor deposition mask preparation body to be verified. Then, the weight of this resin is measured.

The obtained resin is dissolved by chemical treatment, and particles are separated and purified from the dissolved resin. Then, after the melted resin is dried, the weight of this resin is measured. This makes it possible to calculate the content of particles in the obtained resin. Examples of the aqueous solution used for the chemical treatment include an alkaline solution heated to 60 ° C. or higher. Examples of such an alkaline solution include TPE3000 manufactured by Toray Engineering Co., Ltd.

Further, the particle size of the particles separated from the resin is measured, and the composition of the particles is analyzed. By this composition analysis, it is determined whether the separated particles are silicon compound particles. Examples of the method for measuring the particle size include scanning electron microscope observation and the like. Examples of the composition analysis method include a Fourier transform infrared spectrophotometer, energy dispersive X-ray analysis, and the like.

<Evaporation method using a vapor deposition mask>
The vapor deposition method used for forming the vapor deposition pattern using the vapor deposition mask of the present disclosure described above or the vapor deposition mask with a frame is not particularly limited, and examples thereof include a reactive sputtering method, a vacuum vapor deposition method, and ion plating. Physical Vapor Deposition such as electron beam deposition, Chemical Vapor Deposition such as thermal CVD, plasma CVD, and optical CVD.
n) and the like can be mentioned. Further, the vapor deposition pattern can be formed by using a conventionally known vacuum vapor deposition apparatus or the like.

<Manufacturing method of organic semiconductor devices>
Next, a method for manufacturing an organic semiconductor device according to an embodiment of the present disclosure (hereinafter, referred to as a method for manufacturing an organic semiconductor device of the present disclosure) will be described. The method for manufacturing an organic semiconductor device of the present disclosure includes a step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask, and in the step of forming the vapor deposition pattern, the vapor deposition mask of the present disclosure described above or with a frame is attached. It is characterized in that a thin-film deposition mask is used.

The step of forming a vapor deposition pattern by a vapor deposition method using a vapor deposition mask is not particularly limited, and includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, a counter electrode forming step, a sealing layer forming step, and the like. , In each arbitrary step, a thin-film deposition pattern is formed using the vapor deposition pattern forming method of the present disclosure described above. For example, when the vapor deposition pattern forming method of the present disclosure described above is applied to the light emitting layer forming steps of each of the R (red), G (green), and B (blue) colors of the organic EL device, the vapor deposition pattern forming method of the present disclosure is applied to the substrate. A vapor deposition pattern of each color light emitting layer is formed. The method for manufacturing an organic semiconductor device of the present disclosure is not limited to these steps, and can be applied to any conventionally known step in the manufacture of an organic semiconductor device.

According to the method for manufacturing an organic semiconductor device of the present disclosure described above, it is possible to perform vapor deposition to form an organic semiconductor device in a state where the vapor deposition mask and the vapor deposition object are in close contact with each other without a gap, and the high-definition organic semiconductor The element can be manufactured. Examples of the organic semiconductor device manufactured by the method for manufacturing an organic semiconductor device of the present disclosure include an organic layer, a light emitting layer, a cathode electrode, and the like of an organic EL device. In particular, the method for manufacturing an organic semiconductor device of the present disclosure can be suitably used for manufacturing an R (red), G (green), B (blue) light emitting layer of an organic EL device that requires high-definition pattern accuracy. it can.

<Manufacturing method of organic EL display>
Next, a method for manufacturing an organic EL display (organic electroluminescence display) according to the embodiment of the present disclosure (hereinafter, referred to as a method for manufacturing the organic EL display of the present disclosure) will be described. In the method for manufacturing the organic EL display of the present disclosure, the organic semiconductor device manufactured by the method for manufacturing the organic semiconductor device of the present disclosure described above is used in the manufacturing process of the organic EL display.

Examples of the organic EL display using the organic semiconductor element manufactured by the method for manufacturing the organic semiconductor element of the present disclosure include a notebook computer (see FIG. 5A) and a tablet terminal (see FIG. 5B). , Mobile phones (see FIG. 5 (c)), smartphones (see FIG. 5 (d)), video cameras (see FIG. 5 (e)), digital cameras (see FIG. 5 (f)), smart watches (see FIG. 5 (f)). g) Examples of organic EL displays used in) and the like can be mentioned.

10 ... Metal mask 15 ... Metal mask opening 20 ... Resin mask 25 ... Resin mask opening 60 ... Frame 100 ... Vapor deposition mask 200 ... Vapor deposition mask with frame

Claims (8)

A vapor deposition mask obtained by laminating a metal mask provided with a metal mask opening and a resin mask provided with a resin mask opening corresponding to a pattern to be vapor-deposited at a position overlapping the metal mask opening.
The resin mask is a vapor deposition mask containing silicon compound particles having an average particle size of 50 nm or more and 200 nm or less. The vapor deposition mask according to claim 1, wherein the content of the silicon compound particles in the resin mask is less than 30% by weight. The vapor deposition mask according to claim 2, wherein the content of the silicon compound particles in the resin mask is 2% by weight or more and 15% by weight or less. The vapor deposition mask according to any one of claims 1 to 3, wherein the silicon compound particles are silicon dioxide particles. A thin-film deposition mask with a frame that includes a frame and a thin-film deposition mask fixed to the frame.
A thin-film deposition mask with a frame, wherein the thin-film deposition mask is the thin-film deposition mask according to any one of claims 1 to 4. To obtain a vapor deposition mask in which a metal mask provided with a metal mask opening and a resin mask provided with a resin mask opening corresponding to a pattern to be vapor-deposited at a position overlapping the metal mask opening are laminated. It is a vapor deposition mask preparation body
The vapor-deposited mask preparation body is obtained by laminating the metal mask and a resin layer before the resin mask opening is formed.
The resin layer is a thin-film mask preparation body containing silicon compound particles having an average particle size of 50 nm or more and 200 nm or less. A method for manufacturing organic semiconductor devices.
Including a thin-film deposition pattern forming step of forming a thin-film deposition pattern on a vapor deposition object using a thin-film deposition mask.
A method for manufacturing an organic semiconductor device, wherein the vapor deposition mask used in the vapor deposition pattern forming step is the vapor deposition mask according to any one of claims 1 to 4 or the thin-film deposition mask with a frame according to claim 5. A method for manufacturing organic EL displays
A method for manufacturing an organic EL display, wherein the organic semiconductor device manufactured by the method for manufacturing an organic semiconductor device according to claim 7 is used.

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