JP6877379B2 - Sensor - Google Patents

Description

Embodiments of the present invention relate to sensors.

Sensors using a magnetic layer have been proposed. Stable characteristics are desired in the sensor.

Japanese Unexamined Patent Publication No. 2016-70848

Embodiments of the present invention provide a sensor that provides stable characteristics.

According to the embodiment of the present invention, the sensor includes a detection element unit and a first magnetic unit. The detection element portion includes a support portion, a deformable film portion including a first edge portion supported by the support portion, and a first element provided on the film portion. The first element includes a first magnetic layer and a second magnetic layer. The first direction from the second magnetic layer to the first magnetic layer is along the direction from the film portion to the first element. The first edge is along a second direction that intersects the first direction. The first magnetic part includes a first magnetic region. The first magnetic region is separated from the detection element portion and faces the detection element portion. The first magnetic region is along the third direction. The third direction is inclined with respect to the second direction along a plane perpendicular to the first direction. The second direction is inclined with respect to the magnetization of the first magnetic layer in the initial state. The third direction is inclined with respect to the direction of magnetization of the second magnetic layer. The third direction and the direction of the magnetization of the first magnetic layer in the initial state are perpendicular to each other.

1 (a) and 1 (b) are schematic views illustrating the sensor according to the first embodiment. FIG. 2 is a schematic plan view illustrating a part of the sensor according to the first embodiment. 3 (a) to 3 (c) are schematic views illustrating a part of the sensor according to the first embodiment. FIG. 4 is a schematic diagram illustrating the sensor according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. FIG. 6 is a schematic cross-sectional view illustrating a part of the sensor according to the first embodiment. FIG. 7 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. FIG. 8 is a schematic plan view illustrating the sensor according to the second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, and the like are not necessarily the same as the actual ones. Even if the same part is represented, the dimensions and ratios of each may be represented differently depending on the drawing.
In addition, in the present specification and each figure, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.

(First Embodiment)
1 (a) and 1 (b) are schematic views illustrating the sensor according to the first embodiment.
FIG. 2 is a schematic plan view illustrating a part of the sensor according to the first embodiment.
FIG. 1A is a sectional view taken along line A1-A2 of FIG. 1B. FIG. 1 (b) is a plan view seen from the arrow AR1 of FIG. 1 (a). In FIG. 1B, some elements are not shown for the sake of legibility. FIG. 2 shows elements not shown in FIG. 1 (b).

As shown in FIGS. 1A and 1B, the sensor 110 according to the present embodiment includes a detection element section 51s and a first magnetic section 21. In this example, the second magnetic part 22, the third magnetic part 23, the base 26, and the control element part 68 are further provided. The sensor 110 is, for example, a magnetic device. The sensor 110 is, for example, an element package. The sensor 110 is, for example, an acoustic sensor.

For example, a third magnetic portion 23 is provided between the substrate 26 and the second magnetic portion 22. A first magnetic unit 21, a detection element 51s, and a control element 68 are provided between the third magnetic unit 23 and the second magnetic unit 22.

As shown in FIG. 1 (b), in this example, the first magnetic portion 21 includes the first to seventh magnetic regions 21a to 21g. In one direction (for example, the X-axis direction), a second magnetic region 21b is provided between the fifth magnetic region 21e and the first magnetic region 21a. For example, the detection element section 51s is provided between the first magnetic region 21a and the second magnetic region 21b. The detection element section 51s is provided between the third magnetic region 21c and the fourth magnetic region 21d. The direction from the fourth magnetic region 21d to the third magnetic region 21c intersects the direction from the second magnetic region 21b to the first magnetic region 21a (in this example, the X-axis direction). The direction from the sixth magnetic region 21f to the third magnetic region 21c intersects the direction from the second magnetic region 21b to the first magnetic region 21a.

For example, the control element unit 68 is provided between the fifth magnetic region 21e and the second magnetic region 21b. A control element unit 68 is provided between the sixth magnetic region 21f and the seventh magnetic region 21g. A second magnetic region 21b is provided between the detection element unit 51s and the control element unit 68.

The first magnetic unit 21 is separated from the detection element unit 51s and away from the control element unit 68. The first magnetic unit 21 does not come into contact with, for example, the detection element unit 51s and the control element unit 68.

As shown in FIG. 1A, a detection element section 51s is provided between the second magnetic section 22 and the third magnetic section 23. In this example, the second magnetic unit 22 includes a portion that overlaps with the control element unit 68. A control element unit 68 is provided between this portion of the second magnetic portion 22 and the third magnetic portion 23.

As shown in FIG. 1A, in this example, the second magnetic portion 22 is continuous with the first magnetic portion 21. As will be described later, the second magnetic portion 22 may be provided separately from the first magnetic portion 21. In this case, the second magnetic portion 22 may be joined to the first magnetic portion 21 by a first member described later.

In this example, the third magnetic portion 23 is provided separately from the first magnetic portion 21. For example, the first magnetic portion 21 is joined to the third magnetic portion 23 by a second member 28b. The second member 28b is provided between the third magnetic portion 23 and the first magnetic portion 21. By providing the third magnetic portion 23 separately from the first magnetic portion 21, for example, the mounting and electrical connection of the detection element portion 51s becomes easy.

FIG. 2 shows an example of the second magnetic portion 22. As shown in FIGS. 2 and 1A, the second magnetic portion 22 includes a hole h1 (for example, an acoustic hole). In this example, a plurality of holes h1 are provided.

For example, the detection element section 51s is electrically connected to the wire 51w. The control element unit 68 is electrically connected to the wire 68w. For example, these wires are electrically connected to each other. For example, a conductive member provided on the substrate 26 connects these wires electrically. The control element unit 68 is electrically connected to the detection element unit 51s. The control element unit 68 can detect, for example, a characteristic (at least one of electric resistance, voltage, and current) related to a change in the electric resistance of the detection element unit 51s. For example, the control element unit 68 applies a voltage to the detection element unit 51s. The control element unit 68 processes, for example, a signal obtained from the detection element unit 51s. The control element unit 68 includes, for example, an electronic circuit. The control element unit 68 includes, for example, an ASIC.

As shown in FIGS. 1A and 1B, the detection element section 51s includes a support section 70s, a film section 70d, and a first element 51. In this example, the second element 52 is further provided.

3 (a) to 3 (c) are schematic views illustrating a part of the sensor according to the first embodiment.
FIG. 3A is a perspective view. FIG. 3B is a sectional view taken along line A3-A4 of FIG. 3A. FIG. 3C is a cross-sectional view of the second element 52.

The film portion 70d is supported by the support portion 70s. As shown in FIG. 3A, the film portion 70d includes the first edge portion r1. The first edge portion r1 is supported by the support portion 70s. In this example, the film portion 70d includes the second edge portion r2. The first edge portion r2 is supported by the support portion 70s.

The film portion 70d is deformable. For example, the film portion 70d can be deformed by an external force applied to the film portion 70d. This external force is, for example, a sound (including ultrasonic waves) transmitted to the film portion 70d through the hole h1. The membrane portion 70d is, for example, a diaphragm. In this example, the film portion 70d is a "double-sided beam". The film portion 70d may be a “cantilever”.

The first element 51 is provided on the film portion 70d. In this example, a plurality of first elements 51 are provided. The plurality of first elements 51 are arranged along the first edge portion r1. At least two of the plurality of first elements 51 may be connected in series with each other. The second element 52 is also provided on the film portion 70d. In this example, a plurality of second elements 52 are provided. The plurality of second elements 52 are arranged along the second edge portion r2. At least two of the plurality of second elements 52 may be connected in series with each other.

As shown in FIG. 3B, the first element 51 includes a first magnetic layer 11 and a second magnetic layer 12. In this example, the second magnetic layer 12 is provided between the first magnetic layer 11 and the film portion 70d. In this example, the first element 51 further includes a first intermediate layer 11n. The first intermediate layer 11n is provided between the first magnetic layer 11 and the second magnetic layer 12 and is non-magnetic.

As shown in FIG. 3C, the second element 52 includes a third magnetic layer 13, a fourth magnetic layer 14, and a second intermediate layer 12n. In this example, the fourth magnetic layer 14 is provided between the third magnetic layer 13 and the film portion 70d. The second intermediate layer 12n is provided between the third magnetic layer 13 and the fourth magnetic layer 14 and is non-magnetic. The first to fourth magnetic layers 11 to 14 are, for example, ferromagnetic.

In this example, the first to fourth conductive layers 58a to 58d are provided. A first magnetic layer 11, a second magnetic layer 12, and a first intermediate layer 11n are provided between the first conductive layer 58a and the second conductive layer 58b. A third magnetic layer 13, a fourth magnetic layer 14, and a second intermediate layer 12n are provided between the third conductive layer 58c and the fourth conductive layer 58d. Each of these conductive layers is electrically connected to, for example, the wire 51w, and is electrically connected to the control element unit 68. As shown in FIG. 3B, in this example, the insulating layer 58i is provided between the first electrode 58a and the film portion 70d.

As shown in FIG. 3B, for example, a part of the member to be the support portion 70s and the film portion 70d may be removed, and the removed and thinned portion may be the film portion 70d. For example, the thick portion may be the support portion 70s.

For example, the resistance of the detection element section 51s (the electrical resistance of at least one of the first element 51 and the second element 52) changes according to the deformation of the film section 70d. For example, when an external force is applied to the film portion 70d, at least one of the magnetization direction of the first magnetic layer 11 and the magnetization direction of the second magnetic layer 12 changes. The angle between these magnetizations changes. This is based on, for example, magnetostriction. The electrical resistance changes as the angle changes. This is based, for example, on the magnetoresistive effect. By detecting the change in the resistance of the detection element unit 51s, it is possible to detect an applied external force (for example, sound).

In one example, for example, the direction of magnetization of the first magnetic layer 11 is more likely to change than the magnetization of the second magnetic layer 12. In this case, for example, the first magnetic layer 11 is a magnetization free layer. For example, the second magnetic layer 12 is a reference layer. In another example, the first magnetic layer 11 may be a reference layer and the second magnetic layer 12 may be a magnetization free layer. Both of the two magnetization directions may change according to the deformation of the film portion 70d. In the following, it is assumed that the direction of magnetization of the first magnetic layer 11 is more likely to change than the magnetization of the second magnetic layer 12.

In the embodiment, for example, the film portion 70d is deformed by an external force (for example, a sound including ultrasonic waves) received by the sensor 110, and the deformation of the film portion 70d is converted into electric resistance by the magnetic layer. By providing the first magnetic portion 21 in the sensor 110, it is possible to attenuate the external magnetic field incident on the sensor 110 along the XY plane. By providing the second magnetic portion 22 and the third magnetic portion 23, it is possible to attenuate the external magnetic field incident on the sensor 110 along the Z-axis direction. The external magnetic field includes, for example, geomagnetism and electromagnetic waves (including electric current) existing in the vicinity of the sensor 110. These magnetic parts can function as, for example, a magnetic shield.

In the sensor 110 according to the embodiment, the arrangement of the magnetic part is as follows. Thereby, for example, the influence of the external magnetic field on the characteristics of the detection element section 51s can be effectively suppressed. Hereinafter, an example of arrangement will be further described.

As shown in FIG. 3B, the direction from the second magnetic layer 12 to the first magnetic layer 11 is defined as the first direction D1. The first direction D1 is along the direction from the film portion 70d toward the first element 51. The first direction D1 intersects the film surface 70f of the film portion 70d (see FIGS. 3A and 3B).

The first direction D1 is the Z-axis direction. One direction perpendicular to the X-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

As shown in FIGS. 1 (b) and 3 (a), the first edge portion r1 is along the second direction D2. The second direction D2 intersects the first direction D1 (direction from the second magnetic layer 12 to the first magnetic layer 11). For example, the second direction D2 may be perpendicular to the first direction D1.

As shown in FIGS. 1A and 1B, the first magnetic region 21a of the first magnetic portion 21 is separated from the detection element portion 51s. The first magnetic region 21a faces the detection element portion 51s. The first magnetic region 21a is one side portion of the first magnetic portion 21.

The direction from the detection element section 51s to the first magnetic region 21a intersects, for example, the first direction D1 (Z-axis direction). In this example, the direction from the detection element section 51s to the first magnetic region 21a is the X-axis direction.

As shown in FIG. 1B, the first magnetic region 21a is along the third direction D3. The third direction D3 is along a plane (XY plane) perpendicular to the first direction D1 (Z-axis direction). The third direction D3 is inclined with respect to the second direction D2.

The second direction D2 and the third direction D3 are, for example, along the XY plane. The angle (tilt angle) between the third direction D3 and the second direction D2 may be, for example, 10 degrees or more and 80 degrees or less, or 100 degrees or more and 170 degrees or less. The angle between the third direction D3 and the second direction D2 is more preferably 20 degrees or more and 70 degrees or less, or 110 degrees or more and 160 degrees or less.

As a result, as will be described below, the influence of the external magnetic field on the characteristics of the detection element section 51s can be effectively suppressed.

FIG. 4 is a schematic diagram illustrating the sensor according to the first embodiment.
FIG. 4 illustrates the arrangement of the first edge portion r1, the first magnetic layer 11, the second magnetic layer 12, and the first magnetic region 21a of the film portion 70d. As shown in FIG. 4, the first edge portion r1 (the boundary portion between the support portion 70s and the film portion 70d) is along the second direction D2.

When an external force is applied to such a film portion 70d, the film portion 70d is deformed along the Z-axis direction (first direction D1). Deflection in the Z-axis direction occurs. As a result, stress F1 (or strain) is generated in the film portion 70d and the magnetic layer. The stress F1 (or strain) contains components in the direction perpendicular to the second direction D2. Therefore, the orientation of the first magnetization 11M of the first magnetic layer 11 (in this example, the magnetization free layer) changes.

In FIG. 4, the orientation of the first magnetization 11M in the initial state (when no external force is applied) is shown. In the initial state, the first magnetization 11M is preferably inclined with respect to the second direction D2. As a result, when the stress F1 (or strain) is applied, the first magnetization 11M rotates with high sensitivity to the stress F1 (or strain).

For example, in the initial state (when no external force is applied), when the first magnetization 11M is parallel or perpendicular to the second direction D2, the first magnetization 11M is difficult to rotate even if stress F1 (or strain) is applied. ..

On the other hand, the second magnetization 12M of the second magnetic layer 12 (reference layer in this example) is set along the second direction D2. Alternatively, the second magnetization 12M is set so as to be along the direction perpendicular to the second direction D2. As a result, when the first magnetization 11M is rotated, a large change in electrical resistance can be easily obtained. With such an arrangement, the received external force can be detected with high sensitivity. Such an arrangement is a special characteristic in detection using the film unit 70d.

When the detection element unit 51s including the first element 51 is shielded by the first magnetic unit 21, special circumstances described below occur. For example, in order to reduce the size of the sensor 110, it is conceivable to shorten the distance between the first magnetic portion 21 (for example, the first magnetic region 21a) and the detection element portion 51s. Further, the resonance frequency can be increased by shortening the distance between the first magnetic portion 21 (for example, the first magnetic region 21a) and the detection element portion 51s. This makes it easier to detect high-frequency external forces such as ultrasonic waves.

On the other hand, at a position near the inner side surface of the first magnetic portion 21 (for example, the first magnetic region 21a), a magnetic field 21aH perpendicular to the first magnetic region 21a is generated (see FIG. 4). The magnetic field 21aH is strong when it is close to the first magnetic region 21a. As described above, when the distance between the first magnetic region 21a and the detection element portion 51s is shortened, a strong magnetic field 21aH generated from the first magnetic region 21a is applied to the detection element portion 51s. The magnetic field 21aH is substantially perpendicular to the first magnetic region 21a (see FIG. 4).

At this time, as shown in FIG. 4, the magnetic field 21aH can follow the first magnetization 11M in the initial state.

For example, there is a reference example in which the direction along which the first magnetic region 21a is along (third direction D3) is parallel or perpendicular to the second direction D2. In this case, the direction of the magnetic field 21aH is inclined with respect to the first magnetization 11M. Therefore, when the distance between the first magnetic region 21a and the detection element portion 51s is short, the magnetic field 21aH tends to adversely affect the first magnetization 11M in the initial state.

In the embodiment, the orientation of the first magnetization 11M in the initial state can be maintained in a desired orientation even when the distance between the first magnetic region 21a and the detection element portion 51s is shortened. Higher detection sensitivity can be maintained as compared with the above reference example. This enables, for example, detection with high sensitivity while suppressing the influence of an external magnetic field. For example, it is less susceptible to external noise. In the embodiment, it is possible to provide a sensor capable of obtaining stable characteristics.

In the embodiment, for example, the third direction D3 is inclined with respect to the direction of the magnetization of the second magnetic layer 12 (second magnetization 12M). In the above description, the first magnetic layer 11 and the second magnetic layer 12 can be interchanged with each other.

As described above, in this example, the first magnetic portion 21 includes the second magnetic region 21b (see FIG. 1B). The second magnetic region 21b is separated from the detection element portion 51s and faces the detection element portion 51s. In this example, the second magnetic region 21b is along the third direction D3. As a result, the influence of the magnetic field generated from the second magnetic region 21b on the sensitivity of the detection element 51s can be suppressed.

The third magnetic region 21c and the fourth magnetic region 21d are separated from the detection element portion 51s and face the detection element portion 51s. As described above, the direction from the second magnetic region 21b to the first magnetic region 21a intersects the direction from the fourth magnetic region 21d to the third magnetic region 21c. For example, each of the third magnetic region 21c and the fourth magnetic region 21d follows a direction inclining with respect to the second direction D2. Each of the third magnetic region 21c and the fourth magnetic region 21d may be along a direction substantially perpendicular to the third direction D3.

For example, when a plurality of magnetic regions are provided in the first magnetic portion 21, the magnetic region closest to the detection element portion 51s may be along the third direction D3. The detection element section 51s is easily affected by the magnetic region closest to the detection element 51s. Therefore, when the closest magnetic region is along the third direction D3, stable characteristics can be easily obtained. For example, the first magnetic region 21a may include a portion of the first magnetic portion 21 that is closest to the detection element portion 51s.

As shown in FIG. 1 (b), the fourth direction D4 from the second magnetic region 21b to the first magnetic region 21a is along the above plane (XY plane). The fourth direction D4 intersects the third direction D3. The fourth direction D4 (X-axis direction in this example) intersects the direction from the fourth magnetic region 21d to the third magnetic region 21c (Y-axis direction in this example).

For example, the first distance d1 between the first magnetic region 21a and the detection element portion 51s is equal to or less than the third distance d3 between the third magnetic region 21c and the detection element portion 51s. The first distance d1 is equal to or less than the fourth distance d4 between the fourth magnetic region 21d and the detection element portion 51s. The first distance d1 is a distance along the fourth direction D4. The third distance d3 and the fourth distance d4 are distances along a direction that intersects the fourth direction D4 and intersects the first direction D1.

For example, the second magnetic region 21b is along the third direction D3. The second distance d2 between the second magnetic region 21b and the detection element portion 51s is the third distance d3 or less and the fourth distance d4 or less.

For example, the distance dL1 between the second magnetic region 21b and the first magnetic region 21a may be the distance dL2 or less between the fourth magnetic region 21d and the third magnetic region 21c.

In the embodiment, by providing the second magnetic part 22 and the third magnetic part 23, the external magnetic field from various directions is attenuated, and more stable characteristics can be obtained.

For example, as shown in FIG. 1A, the direction from the detection element section 51s to the second magnetic section 22 is along the first direction D1 (Z-axis direction). As described above, the second magnetic portion 22 includes at least one hole h1.

As shown in FIGS. 1A and 2, the second magnetic portion 22 includes a region 22n that does not overlap with the detection element portion 51s in the first direction D1. For example, the sum of the area of the region other than the holes h1 of the second magnetic portion 22 and the areas of the plurality of holes h1 is larger than the area of the detection element 51s. For example, a space in which the detection element 51s is not provided can be secured between the second magnetic portion 22 and the third magnetic portion 23.

As described above, the sensor 110 may include a substrate 26 and a control element unit 68 (see FIGS. 1A and 1B). The control element unit 68 is electrically connected to the detection element unit 51s. The direction from the substrate 26 to the detection element portion 51s is along the first direction D1. The direction from the base 26 to the control element portion 68 is along the first direction D1. In this example, the direction from the control element unit 68 to the detection element unit 51s intersects the first direction D1. For example, the size can be reduced by providing these element portions on one substrate 26. For example, noise can be suppressed.

FIG. 5 is a schematic cross-sectional view illustrating the sensor according to the first embodiment.
FIG. 5 is a cross-sectional view corresponding to the A1-A2 line cross section of FIG. 1 (b).
As shown in FIG. 5, the sensor 111 includes a first member 28a. Other configurations of the sensor 111 are the same as those of the sensor 110.
In this example, the second magnetic portion 22 is provided separately from the first magnetic portion 21. The first member 28a is provided between the second magnetic portion 22 and the first magnetic portion 21. The first member 28a joins the second magnetic portion 22 and the first magnetic portion 21.

By using the first member 28a, for example, the second magnetic portion 22 can be provided separately from the first magnetic portion 21. As a result, for example, the formation of the second magnetic portion 22 (and the first magnetic portion 21) becomes easier as compared with the case where the second magnetic portion 22 is continuous with the first magnetic portion 21.

FIG. 6 is a schematic cross-sectional view illustrating a part of the sensor according to the first embodiment.
FIG. 6 shows one example of the second magnetic portion 22. As shown in FIG. 6, the second magnetic portion 22 includes a first partial region 22a and a second partial region 22b. At least a part of the first partial region 22a overlaps with the detection element portion 51s in the first direction D1 (Z-axis direction). The first partial region 22a does not substantially overlap the first magnetic region 21a, for example, in the first direction D1. The second partial region 22b overlaps with the first magnetic region 21a in the first direction D1. The second partial region 22b does not overlap with the detection element portion 51s in the first direction D1. The second partial region 22b and the first magnetic portion 21 (first magnetic region 21a) are connected by the first member 28a. The hole h1 is provided in the first partial region 22a.

The thickness 22at of the first partial region 22a along the first direction D1 is thinner than the thickness 22bt of the second partial region 22b along the first direction D1.

Such a difference in thickness can be formed, for example, by selectively etching a part of the magnetic member to be the second magnetic portion 22. At the same time as this etching, the hole h1 may be formed.

By using such a second magnetic portion 22, for example, a desired space can be easily formed between the second magnetic portion 22 and the third magnetic portion 23. The second magnetic portion 22 and the first magnetic portion 21 are easily formed.

FIG. 7 is a schematic cross-sectional view illustrating the sensor according to the first embodiment.
FIG. 7 is a cross-sectional view corresponding to the A1-A2 line cross section of FIG. 1 (b).
As shown in FIG. 7, in the sensor 112, the second magnetic portion 22 has a substantially flat plate shape. The thickness of the second magnetic portion 22 along the first direction D1 is substantially uniform.

(Second Embodiment)
FIG. 8 is a schematic plan view illustrating the sensor according to the second embodiment.
FIG. 8 is a plan view corresponding to the state seen from the arrow AR1 of FIG. 1 (a). In FIG. 8, the second magnetic portion 22 is not shown.

As shown in FIG. 8, the sensor 120 according to the present embodiment also includes the detection element section 51s and the first magnetic section 21. In the sensor 120, the first magnetic portion 21 includes the first to seventh magnetic regions 21a to 21g. In the sensor 120, in the first magnetic portion 21, a first protruding portion 21p that protrudes toward the detection element 51s is provided in a region between the first magnetic region 21a and the third magnetic region 21c. A second protruding portion 21q that protrudes toward the detection element 51s is provided in a region between the first magnetic region 21a and the fourth magnetic region 21d. A third protruding portion 21r that protrudes toward the detection element 51s is provided in a region between the second magnetic region 21b and the third magnetic region 21c. A fourth protruding portion 21s that protrudes toward the detection element 51s is provided in a region between the second magnetic region 21b and the fourth magnetic region 21d. Other configurations of the sensor 120 are the same as those of the sensor 110. By providing these protruding portions, for example, the volume of the space surrounded by the first to third magnetic portions 21 to 23 can be reduced. For example, the resonance frequency can be increased, and higher frequency external forces (ultrasonic waves, etc.) can be detected with higher sensitivity.

Also in the sensor 120, the first edge portion r1 of the film portion 70d follows the second direction D2. The first magnetic region 21a is along the third direction D3. The third direction D3 intersects a plane (XY plane) perpendicular to the first direction D1 and is inclined with respect to the second direction D2.

In the sensor 120 as well, even when the distance between the first magnetic region 21a and the detection element portion 51s is shortened, the orientation of the first magnetization 11M in the initial state can be maintained in a desired orientation. High detection sensitivity can be maintained. For example, it is possible to detect with high sensitivity while suppressing the influence of an external magnetic field. In the embodiment, it is possible to provide a sensor capable of obtaining stable characteristics.

In the embodiment, at least one of the first to third magnetic parts 21 to 23 contains at least one element selected from the group consisting of, for example, Fe, Ni and Co. At least one of the first to third magnetic portions 21 to 23 includes, for example, an alloy containing the above elements. At least one of the first to third magnetic portions 21 to 23 may be, for example, an insulator. At least one of the first to third magnetic portions 21 to 23 includes, for example, at least one selected from the group consisting of NiFe, ferrite and silicon steel. At least one of the first to third magnetic portions 21 to 23 may contain a magnetic material having a relative magnetic permeability of 500 or more.

At least one of the first to fourth magnetic layers 11 to 14 includes at least one selected from the group consisting of, for example, Fe, Ni and Co.

At least one of the first and second non-magnetic layers 11n and 12n contains, for example, at least one selected from the group consisting of MgO, Cu and Al.

At least a part of the film portion 70d contains at least one selected from the group consisting of silicon oxide, silicon oxynitride, silicon nitride and aluminum oxide.

According to the embodiment, a sensor capable of obtaining stable characteristics is provided.

In the specification of the present application, "vertical" and "parallel" include not only strict vertical and strict parallel, but also variations in the manufacturing process, for example, and may be substantially vertical and substantially parallel. Just do it.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, those skilled in the art are known about specific configurations of each element such as a detection element, a support part, a film part, an element, a magnetic layer, an intermediate layer, an electrode, a magnetic part, a control element part, and a substrate included in the sensor. The present invention is similarly carried out by appropriately selecting from the range, and is included in the scope of the present invention as long as the same effect can be obtained.

Further, a combination of any two or more elements of each specific example to the extent technically possible is also included in the scope of the present invention as long as the gist of the present invention is included.

In addition, all sensors that can be appropriately designed and implemented by those skilled in the art based on the sensors described above as embodiments of the present invention also belong to the scope of the present invention as long as the gist of the present invention is included.

In addition, within the scope of the idea of the present invention, those skilled in the art can come up with various modified examples and modified examples, and it is understood that these modified examples and modified examples also belong to the scope of the present invention. ..

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

11-14 ... 1st to 4th magnetic layers, 11M, 12M ... 1st and 2nd magnetization, 11n, 12n ... 1st and 2nd intermediate layers, 21-23 ... 1st to 3rd magnetic parts, 21a to 21g ... 1st to 7th magnetic regions, 21aH ... magnetic field, 21p to 21s ... 1st to 4th protrusions, 22a, 22b ... 1st and 2nd partial regions, 22at, 22bt ... thickness, 22n ... regions, 26 ... Substrate, 28a, 28b ... 1st and 2nd members, 51, 52 ... 1st and 2nd elements, 51s ... Detection element unit, 51w ... Wire, 58a to 58d ... 1st to 4th conductive layers, 58i ... Insulation layer , 68 ... Control element part, 68w ... Wiring, 70d ... Membrane part, 70f ... Membrane surface, 70s ... Support part, 110-112, 120 ... Sensor, AR1 ... Arrow, D1 to D4 ... First to fourth directions, F1 ... stress, d1 to d4 ... first to fourth distances, dL1, dL2 ... distances, h1 ... holes, r1, r2 ... first and second edges

Claims (5)

Support part and
A deformable film portion including a first edge portion supported by the support portion,
The first element provided on the film portion and
The first element is a detection element unit including the above.
The first magnetic layer and
The second magnetic layer and
The first direction from the second magnetic layer to the first magnetic layer is along the direction from the film portion to the first element, and the first edge portion intersects the first direction. The detection element unit along the two directions
A first magnetic portion including a first magnetic region that is separated from the detection element portion and faces the detection element portion,
With
The first magnetic region is along the third direction.
The third direction is inclined with respect to the second direction along a plane perpendicular to the first direction.
The second direction is inclined with respect to the magnetization of the first magnetic layer in the initial state.
The third direction is inclined with respect to the direction of magnetization of the second magnetic layer.
A sensor in which the third direction and the direction of the magnetization of the first magnetic layer in the initial state are perpendicular to each other . The sensor according to claim 1, wherein the first magnetic region includes a portion of the first magnetic portion closest to the detection element portion. The sensor according to claim 1 or 2, wherein the angle between the third direction and the second direction is 20 degrees or more and 70 degrees or less, or 110 degrees or more and 160 degrees or less. The first magnetic portion further includes a second magnetic region.
The second magnetic region is separated from the detection element portion and faces the detection element portion.
The detection element unit is provided between the first magnetic region and the second magnetic region.
The sensor according to any one of claims 1 to 3, wherein the second magnetic region is along the third direction. The first magnetic portion further includes a third magnetic region and a fourth magnetic region.
The third magnetic region and the fourth magnetic region are separated from the detection element portion and face the detection element portion.
The detection element unit is provided between the third magnetic region and the fourth magnetic region.
The sensor according to claim 4, wherein the direction from the second magnetic region to the first magnetic region intersects the direction from the fourth magnetic region to the third magnetic region.

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