JP6853085B2 - Crystal elements and crystal devices - Google Patents

Description

The present invention relates to a crystal element and a crystal device having the crystal element. The crystal device is, for example, a crystal oscillator or a crystal oscillator.

The crystal element is composed of, for example, a crystal piece having a substantially rectangular shape in a plan view and a metal pattern provided on the crystal piece. The crystal piece has, for example, a pair of long sides and a pair of short sides connecting both ends of the long sides in a plan view. The metal pattern includes, for example, an excitation electrode portion provided on both main surfaces of the crystal piece, and a connection wiring portion extending from the excitation electrode portion to one short side of the crystal piece. In such an excitation electrode portion, the length of the excitation electrode portion parallel to the long side of the crystal piece becomes longer than the length of the excitation electrode portion parallel to the short side of the crystal piece when the crystal element is viewed in a plan view. (For example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2016-034156

When an alternating voltage is applied to the metal pattern, thickness slip vibration, which is the main vibration, occurs, and at the same time, secondary vibration, specifically, bending vibration and contour slip vibration, also occur. When the crystal element is miniaturized, for example, when the length of the long side of the crystal piece is 920 μm or less, the secondary vibration is likely to be combined with the thickness slip vibration which is the main vibration, and the electrical characteristics are deteriorated. There is a risk of

An object of the present invention is to provide a crystal element and a crystal device capable of reducing the influence of secondary vibration on thickness sliding vibration, which is the main vibration, and improving electrical characteristics.

The crystal element in the present invention includes a crystal piece having a substantially rectangular shape in a plan view, a substantially rectangular excitation electrode portion provided on both main surfaces of the crystal piece, and one of a crystal piece from the excitation electrode portion. A crystal element having a metal pattern consisting of a connecting wiring portion extending to the edge on the short side, and the length of the side of the excitation electrode portion parallel to the short side of the crystal piece is the crystal. It is characterized in that it is longer than the length of the side of the excitation electrode portion parallel to the long side of one piece.

The crystal element in the present invention includes a crystal piece having a substantially rectangular shape in a plan view, a substantially rectangular excitation electrode portion provided on both main surfaces of the crystal piece, and one of the excitation electrode portion to the crystal piece. A crystal element having a metal pattern consisting of a connecting wiring portion extending to the edge on the short side, and the length of the side of the excitation electrode portion parallel to the short side of the crystal piece is the crystal. It is longer than the length of the side of the excitation electrode that is parallel to the long side of one piece. By doing so, it is possible to reduce the influence of the secondary vibration on the thickness slip vibration, which is the main vibration, and it is possible to improve the electrical characteristics.

It is a perspective view of the crystal device which concerns on this embodiment. It is sectional drawing in the AA cross section of FIG. It is a perspective view of the crystal element which concerns on this embodiment. It is a top view of the upper surface of the crystal element which concerns on this embodiment. FIG. 5 is a plan view of the lower surface of the crystal element according to the present embodiment as seen through from the upper surface side. It is a comparison table which showed the contrast of the result for each range of Le / We in Experiment 1. It is a comparison table which showed the comparison of the result for each range of d1 in Experiment 2.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The drawings used in the following description are schematic, and the dimensional ratios and the like on the drawings do not always match the actual ones. For convenience, the surface of the layered portion (ie, the surface that is not a cross section) may be hatched.

The crystal device and the crystal element of the present disclosure may both be upward or downward, but in the following, for convenience, the upper surface of the paper surface of FIGS. 1 and 2 is referred to as the upper surface, and terms such as upper surface or lower surface are used. There is. Further, in the case of simply plane view or plane perspective, unless otherwise specified, the view is made in the vertical direction defined for convenience as described above.

1 and 2 are diagrams relating to a crystal device according to the present embodiment. FIG. 1 is a perspective view of the crystal device according to the present embodiment, and FIG. 2 is a cross-sectional view taken along the line AA of FIG. 3 to 5 are views on the crystal element according to the present embodiment. FIG. 3 is a perspective view of the crystal element according to the present embodiment. FIG. 4 is a plan view of the upper surface of the crystal element according to the present embodiment, and FIG. 5 is a plan view of the lower surface of the crystal element according to the present embodiment viewed from the upper surface side. 6 and 7 relate to the results of the experiment. FIG. 6 is a comparison table showing the comparison of the results for each range of Le / We in Experiment 1.
FIG. 7 is a comparison table showing the comparison of the results for each range of d1 in Experiment 2.

(Outline of crystal device)
A crystal device is an electronic component that has a substantially rectangular parallelepiped shape as a whole. The crystal device has, for example, a length of a long side or a short side of 0.6 mm to 2.0 mm and a thickness of 0.2 mm to 1.5 mm in the vertical direction.

The crystal device includes, for example, a substrate 110 on which a recess is formed, a crystal element 120 housed in the recess, a lid 130 that closes the recess, and a bump for mounting the crystal element on the substrate 110 (in the present embodiment). It is composed of a conductive adhesive 140).

The crystal element 120 is a portion that generates vibration generated in an oscillation signal. The base 110 and the lid 130 have a space for accommodating the crystal element 120. The recess of the substrate 110 is sealed by the lid 130, and the inside thereof is, for example, evacuated or filled with a suitable gas (for example, nitrogen).

The substrate 110 includes, for example, a substrate portion 110a that is the main body of the substrate 110, a pair of mounting pads 111 for mounting the crystal element 120, and a plurality of external terminals for mounting the crystal device on a circuit board (not shown) or the like. It has 112 and.

The substrate 110 is composed of a main substrate portion 110a and a frame-shaped frame portion 110b provided along the edge portion of the upper surface of the substrate portion 110a, and a recess is formed. The mounting pad 111 is composed of a conductive layer made of metal or the like, and the mounting pad 111 located on the bottom surface of the recess and the external terminal 112 are formed by a conductor (not shown) arranged in the substrate portion 110a. They are electrically connected to each other. The lid 130 is made of metal, for example, and is joined to the upper surface of the substrate 110 by seam welding or the like.

The crystal element 120 has, for example, a crystal piece 121 and a metal pattern 122 for applying an alternating voltage to the crystal piece 121. The metal pattern 122 includes a pair of excitation electrode portions 123 provided near the center of both main surfaces of the crystal piece 121, and a connection wiring portion 124 extending from the excitation electrode portion 123 to the edge portion of the crystal piece 121. Consists of.

The crystal element 120 has a substantially plate shape, and the main surface thereof is housed in the recess so as to face the bottom surface of the recess of the substrate 110, specifically, the upper surface of the substrate portion 110a. Then, a part of the pair of connection wiring portions 124, specifically, the connection portion 124a is electrically connected to the pair of mounting pads 111 by a pair of bumps (conductive adhesive 140 in this embodiment). .. As a result, the crystal element 120 is supported by the substrate portion 110a of the substrate 110 like a cantilever. Further, the pair of excitation electrode portions 123 are electrically connected to the mounting pad 111 via a pair of connection wiring portions 124 and bumps (conductive adhesive 140 in this embodiment), and by extension, of a plurality of external terminals 112. It is electrically connected to either two.
The bump is, for example, a conductive adhesive 140. The conductive adhesive 140 is composed of, for example, a conductive filler mixed with a thermosetting resin.

The crystal device configured in this way is arranged, for example, on a mounting surface of a circuit board (not shown) so that the lower surface of the substrate 110 faces each other, and an external terminal 112 is placed on a pad (not shown) of the circuit board by soldering or the like. It is mounted on the circuit board by being joined. An oscillation circuit is configured on the circuit board, for example. The oscillation circuit applies an alternating voltage to the pair of excitation electrode units 123 via the external terminal 112 and the mounting pad 111 to generate an oscillation signal. At this time, the oscillation circuit utilizes, for example, the fundamental wave vibration of the thickness slip vibration of the crystal piece 121. Overtone vibration may be utilized.

(Approximate configuration of crystal element)
FIG. 3 is a perspective view of the crystal element according to the present embodiment. FIG. 4 is a plan view of the upper surface of the crystal element according to the present embodiment, and FIG. 5 is a plan view of the lower surface of the crystal element according to the present embodiment viewed from the upper surface side.

In the present embodiment, when the crystal element 120 is mounted on the substrate 110, the surface of the substrate 110 that is substantially parallel to the upper surface of the substrate portion 110a is the main surface. Further, the direction from the crystal element 120 toward the substrate portion 110a is downward, and the direction from the substrate portion 110a toward the crystal element 120 is upward.

Further, the main surface of the crystal element 120 facing the substrate portion 110a side is the lower surface of the crystal element 120, and the main surface of the crystal element 120 facing the side opposite to the lower surface of the crystal element 120 is the upper surface of the crystal element 120.

Further, the surface of the vibrating portion 121a that is substantially parallel to the upper surface of the substrate portion 110a is used as the main surface of the vibrating portion 121a. Then, the surface of the vibrating portion 121a which is the main surface of the vibrating portion 121a and faces the substrate portion 110a side is the lower surface of the vibrating portion 121a, and the main surface of the vibrating portion 121a facing the lower surface opposite to the lower surface of the vibrating portion 121a is the vibrating portion 121a. The upper surface of.

Further, the surface of the peripheral portion 121b that is substantially parallel to the upper surface of the substrate portion 110a is defined as the main surface of the peripheral portion 121b. Specifically, the portion of the peripheral portion 121b that becomes the flat plate portion corresponds to the main surface of the peripheral portion 121b. Of the main surfaces of the peripheral portion 121b, the surface facing the upper surface side of the substrate portion 110a is defined as the lower surface of the peripheral portion 121b. Further, the main surface of the peripheral portion 121b facing the lower surface of the peripheral portion 121b is defined as the upper surface of the peripheral portion 121b.

Further, in the present embodiment, the lower surface of the crystal element 120 and the lower surface of the crystal piece 121 are used in the same meaning, and similarly, the upper surface of the crystal element 120 and the upper surface of the crystal piece 121 are used in the same meaning. ing.

The crystal element 120 is composed of a crystal piece 121 and a metal pattern 122.

The crystal piece 121 is a so-called AT cut plate. That is, in a crystal, a Cartesian coordinate system XYZ system consisting of an X-axis (electric axis), a Y-axis (mechanical axis), and a Z-axis (optical axis) is 30 ° or more and 50 ° or less (for example, 35 °) around the X-axis. When the orthogonal coordinate system XY'Z'system is defined by rotating 15'), the main surface of the crystal piece 121 is parallel to the XZ'plane.

The crystal piece 121 is composed of a substantially rectangular parallelepiped vibrating portion 121a and a peripheral portion 121b provided along the outer edge of the vibrating portion 121a and having a thickness in the vertical direction thinner than that of the vibrating portion 121a.

The vibrating portion 121a is, for example, a substantially thin rectangular parallelepiped having a pair of main surfaces parallel to the XZ'plane, and the main surface is a rectangle having a long side parallel to the X axis and a short side parallel to the Z'axis. is there. A part of the metal pattern 122, specifically, the excitation electrode portion 123 is provided on the main surface of the vibrating portion 121a. When an alternating voltage is applied to the metal pattern 122, the portion of the vibrating portion 121a sandwiched between the excitation electrode portions 123 vibrates due to the inverse piezoelectric effect and the piezoelectric effect. At this time, in the crystal piece 121, the thickness slip vibration and the secondary vibration, which are the main vibrations, are generated.

Although not shown, the peripheral portion 121b includes a flat plate portion and an intermediate portion. The flat plate portion is a portion of the peripheral portion 121b having a surface substantially parallel to the main surface of the vibrating portion 121a. The vertical thickness of the flat plate portion is smaller than that of the vibrating portion 121a in the vertical direction.

Although not shown, the intermediate portion is located between the vibrating portion 121a and the flat plate portion when the crystal piece 121 is viewed in a plan view. The vertical thickness of the intermediate portion gradually decreases from the vibrating portion 121a to the flat plate portion. Therefore, in the present embodiment, although not particularly shown, when the crystal piece 121 is cross-sectionally viewed on a plane parallel to the X-axis and the Y'axis, it includes a slope located between the vibrating portion 121a and the flat plate portion. The portion that is exposed corresponds to the intermediate portion of the peripheral portion 121b.

Therefore, the crystal piece 121 has a mesa-shaped shape. By forming the crystal piece 121 into a mesa-shaped shape in this way, energy confinement can be improved as compared with the case where a flat crystal piece is used, and the thickness sliding vibration, which is the main vibration, is the excitation electrode portion. It is possible to reduce the amount of leakage propagation from the portion sandwiched between the 123s, and it is possible to improve the electrical characteristics while reducing the increase in the equivalent series resistance value.

Further, by using the mesa-shaped crystal piece 121 in this way, it is possible to suppress the contour slip vibration, which is one of the secondary vibrations, as compared with the case where the flat plate-shaped crystal piece is used. It is possible to suppress the deterioration of electrical characteristics due to the combination of the secondary vibration and the thickness slip vibration, which is the main vibration. That is, such a shape makes it possible to improve the electrical characteristics.

The crystal piece 121 has a substantially rectangular shape in a plan view, and its main surface is, for example, a rectangle having a long side parallel to the X axis and a short side parallel to the Z'axis. In such a crystal piece 121, the X-axis direction is the longitudinal direction, and the Y'axis direction is the vertical thickness direction.

Here, when the outer shape of the crystal piece 121 is formed by etching, a relatively large error (such as a systematic error) occurs due to the anisotropy of the crystal with respect to the etching. The error may be used intentionally. In the description of the present disclosure, the existence of such an error shall be ignored. For example, in an actual crystal piece 121, the side surface may be inclined without being orthogonal to the main surface, or the side surface may not be flat and may have a shape bulging outward. Such inclination and / or Illustration and description of the bulge will be omitted. Such errors may also be ignored when determining whether a third party product relates to the technology of the present disclosure. Of course, things like random errors can be ignored.
This is the reason why the intermediate portion and the flat plate portion in the peripheral portion 121b are not particularly distinguished and shown.

Further, in the present embodiment, as shown in FIGS. 4 and 5, the shape of the crystal piece 121 in a plan view is rectangular. The rectangle is a rectangle (in the present disclosure, a square is included. In the case of a square, a predetermined side is a long side and a predetermined other side connected to the predetermined side is a short side. In 123, it is assumed that the square is not included), and has a pair of long sides and a short side connecting both ends of the pair of long sides. In the present disclosure, the rectangle or the rectangle includes a shape in which the corners are chamfered (the same applies to the excitation electrode portion 123). In the crystal piece 121, for example, the main surface is a surface substantially parallel to the XZ'plane, the long side is a side parallel to the X axis, and the short side is a side parallel to the Z'axis.

The vertical thickness of the vibrating portion 121a in the crystal piece 121 is set based on a desired natural frequency (sometimes referred to as a vibration frequency in the present embodiment) for the thickness slip vibration. For example, when the fundamental wave vibration of the thickness sliding vibration is used and the natural frequency is F (MHz), the basic formula for obtaining the vertical thickness t (μm) of the vibrating portion 121a corresponding to the natural frequency F is , T = 1670 / F. Actually, the thickness of the vibrating portion 121a in the crystal piece 121 in the vertical direction is a value finely adjusted from the value of the basic formula in consideration of the weight of the exciting electrode portion 123 and the like.

Further, such a crystal piece 121 is a predetermined crystal piece 121 when a side surface including a predetermined side of the crystal piece 121 in which the connection portions 124a of the connection wiring portion 124 are provided side by side is viewed in a plan view (side view). A recess 125 is formed on a side surface including one side.

The recess 125 formed on the side surface including a predetermined side of the crystal piece 121 includes, for example, a first recess 125a, a second recess 125b, and a third recess 125c. The first recess 125a is formed so as to be one end side of a predetermined side of the crystal piece 121 and to be connected to the lower surface of the crystal piece 121. The second recess 125b is formed so as to be on the other end side of a predetermined side and to be connected to the lower surface of the crystal piece 121. The third recess 125c is formed so as to be connected to the upper surface of the crystal piece 121 and the lower surface of the crystal piece 121 while passing through the midpoint of a predetermined side of the crystal piece 121, for example.

In this way, when the crystal element 120 is used as a crystal device by forming the recess 125 on the side surface including a predetermined side of the crystal piece 121 in which the connection portions 124a of the connection wiring portion 124 are provided side by side, the connection portion Since the 124a is bonded (bonded) by a bump (conductive adhesive 140 in this embodiment), both ends of a predetermined side of the crystal piece 121 on which the first recess 125a and the second recess 125b are formed are formed. Will be joined (bonded). From another viewpoint, it can be said that both ends of the side surface on which the recess 125 is formed can be fixed by bumps (conductive adhesive 140 in this embodiment).
Therefore, as compared with the case where the recess is formed on the side surface including a predetermined side of the crystal piece 121 in which the connecting portion 124a is not provided,
It is possible to further suppress the occurrence of bending vibration, which is one of the secondary vibrations. As a result, the influence of the bending vibration, which is one of the secondary vibrations, on the thickness slip vibration, which is the main vibration, can be reduced, and the electrical characteristics can be improved.

Examples of various dimensions of the crystal piece 121 are, for example, a long side length of 550 μm to 920 μm, a short side length of 350 μm to 750 μm, and a vertical thickness of 20 μm to 70 μm.

The metal pattern 122 provided on the crystal piece 121 is for applying an alternating voltage from the outside of the crystal element 120. The metal pattern 122 may be a single layer, or a plurality of metal layers may be laminated.

In the present embodiment, the metal pattern 122 is composed of, for example, a first metal layer and a second metal layer laminated on the first metal layer, although not particularly shown.

As the first metal layer, a metal having good adhesion to quartz is used, and for example, any one of nickel, chromium, nichrome or titanium is used. By using a metal having good adhesion to quartz for the first metal layer, a metal having difficulty in adhesion to quartz can be used for the second metal layer.

For the second metal layer, a stable material having a low electrical resistivity among the metal materials is used, and for example, either gold, an alloy containing gold as a main component, silver, or an alloy containing silver as a main component. One is used. By using a metal having a low electrical resistivity for the second metal layer, the resistivity of the metal pattern 122 itself can be reduced, and as a result, it is possible to reduce the increase in the equivalent series resistance value of the crystal element 120. It will be possible. Also, by using a stable metal material,
It is possible to reduce the reaction between the ambient air in which the crystal element 120 exists and the metal pattern 122 to change the weight of the metal pattern 122, change the frequency of the crystal element 120, and change the electrical characteristics.

The metal pattern 122 is composed of an excitation electrode portion 123 and a connection wiring portion 124. The connection wiring unit 124 includes a connection unit 124a and a wiring unit 124b.

The excitation electrode unit 123 is for applying an alternating voltage to the crystal piece 121. The excitation electrode portions 123 are paired and are provided so as to face each other near the center of both main surfaces of the crystal piece 121, specifically, the central portion of the vibrating portion 121a. The excitation electrode unit 123 has a substantially rectangular shape in a plan view.

The connection wiring unit 124 includes a connection unit 124a and a wiring unit 124b, and is for applying an alternating voltage to the excitation electrode unit 123 from the outside of the crystal element 120.

When the crystal element 120 is used as a crystal device, the connection portion 124a is for mounting on the substrate 110, and is provided with a mounting pad 111 and a bump (conductive in the present embodiment) provided on the upper surface of the substrate portion 110a of the substrate 110. It is electrically adhered by the sex adhesive 140). The connecting portions 124a are paired and are provided at positions facing the mounting pads 111 of the substrate portion 110a, and are provided side by side along the edge of one short side of the crystal piece 121.

Further, the connecting portion 124a is provided, for example, along the edge of one short side of the crystal piece 121 located on the + X axis direction side with respect to the vibrating portion 121a in a plan view. Therefore, one short side of the crystal piece 121 is the short side of the crystal piece 121 located on the + X axis direction side with respect to the vibrating portion 121a. By doing so, the frequency temperature characteristic of the crystal element 120 can be improved as compared with the case where the connecting portion 124a is provided on the −X axis direction side with respect to the vibrating portion 121a.

The wiring portion 124b is for electrically connecting the connection portion 124a and the excitation electrode portion 123, one end of which is connected to the excitation electrode portion 123, and the other end of which is connected to the connection portion 124a. Further, from another viewpoint, it can be said that the wiring portion 124b extends from the excitation electrode portion 123 to the connection portion 124a. Further, the wiring portion 124b is extended so as to be parallel to the long side of the crystal piece 121, for example.

By providing the connection wiring portion 124b in this way, the length of the wiring portion 124b from the excitation electrode portion 123 to the connection portion 124a can be shortened, and the resistance of the wiring portion 124b itself can be reduced. As a result, it is possible to reduce the increase in the equivalent series resistance value of the crystal element 120.

As described above, when an alternating voltage is applied to the metal pattern 122 of such a crystal element 120, a thickness slip vibration, which is a main vibration, and a secondary vibration are generated. There are at least two types of this secondary vibration: contour slip vibration and flexion vibration in which the main vibration displacement of the thickness slip vibration, which is the main vibration, is in the same direction.

In the thickness slip vibration, which is the main vibration, the slip vibration displacement is in a direction parallel to the X-axis, and the strain at the center of the excitation electrode portion 123 is maximum. This is because the charge distribution in the excitation electrode portion 123 when the alternating voltage is applied to the metal pattern 122 is a sin distribution in the direction parallel to the X axis and a constant distribution in the direction parallel to the Z'axis. .. Therefore, it can be said that the charge distribution in the excitation electrode portion 123 is a semi-cylindrical distribution. The thickness slip vibration, which is the main vibration, is
The more electric charge can be accumulated in the excitation electrode portion 123, the easier it is for the thickness sliding vibration to occur. As a method of accumulating a larger amount of electric charge in the excitation electrode portion 123 in this way, there is a method of increasing the applied alternating voltage or increasing the area of the excitation electrode portion 123. By facilitating the thickness slip vibration, which is the main vibration, it is possible not only to reduce the increase in the equivalent series resistance value but also to improve the electrical characteristics.

One of the secondary vibrations is contour slip vibration. In the contour slip vibration, the vibration displacement of the slip vibration is in the same direction as the main vibration displacement of the thickness slip vibration which is the main vibration. That is, the main vibration displacement of the contour slip vibration is in the direction parallel to the X axis.

In addition, there is bending vibration, which is one of the secondary vibrations different from the contour slip vibration described above. The vibration displacement of the bending vibration is in the same direction as the main vibration displacement of the thickness slip vibration, which is the main vibration. That is, the main vibration displacement of bending is in the direction parallel to the X-axis.

In such a crystal element 120, the excitation electrode portion 123 is rectangular in a plan view. At this time, the long side of the excitation electrode portion 123 is parallel to the Z'axis, that is, parallel to the short side of the crystal piece 121, and the short side of the excitation electrode portion 123 is parallel to the X axis, that is, , Parallel to the long side of the crystal piece 121.

Here, the length of the side of the excitation electrode portion 123 parallel to the short side of the crystal piece 121 is We, and the length of the side of the excitation electrode portion 123 parallel to the long side of the crystal piece 121 is Le.

Therefore, the crystal element 120 according to this embodiment has We> Le.

Further, the crystal element 120 according to this embodiment has 0.90 <Le / We <1.0.

Further, in the crystal element 120 according to the present embodiment, as described above, the crystal piece 121 is composed of a vibrating portion 121a and a peripheral portion 121b. The vibrating portion 121a is a substantially rectangular shape including two sides parallel to the long side of the crystal piece 121 and two sides parallel to the short side of the crystal piece 121 in a plan view of the crystal element 120.

By using such a crystal piece 121, it is possible to reduce the amount of coupling between the thickness slip vibration, which is the main vibration, and the contour slip vibration, which is one of the secondary vibrations. As a result, the equivalent series resistance value becomes large due to the combination of the thickness slip vibration and the contour slip vibration, the frequency temperature characteristic of the vibration deviates from the smooth cubic curve, or the temperature control of the equivalent series resistance value fluctuates significantly. It is possible to suppress a decrease in electrical characteristics such as the occurrence of.

Here, the length of the side of the vibrating portion 121a parallel to the short side of the crystal piece 121 is Wm, and the length of the side of the vibrating portion 121a parallel to the long side of the crystal piece 121 is Lm.

Further, the crystal element 120 according to the present embodiment has Wm <Lm in a plan view.

Further, the crystal element 120 according to the present embodiment has Wm> We and Lm> Le in a plan view. Therefore, in a plan view, the outer edge of the excitation electrode portion 123 is located inside the outer edge of the vibrating portion 121a.

Further, the crystal element 120 according to the present embodiment is the side of the excitation electrode portion 123 parallel to the long side of the crystal piece 121 and the side of the vibrating portion 121a adjacent to the long side, which is the length of the crystal piece 121. Assuming that the distance from the side of the vibrating portion 121a parallel to the side is d1, 0.075> 2 × d1 / Wm> 0 is satisfied. Therefore, d1 and Wm satisfy the following relationship.
0.0375Wm>d1> 0

Further, in the crystal element 120 according to the present embodiment, the center of the vibrating portion 121a and the center of the exciting electrode portion 123 overlap. Further, in the crystal element 120 according to the present embodiment, the distance from one short side of the crystal piece 121 to the center of the vibrating portion 121a is larger than the distance from one short side of the crystal piece 121 to the center of the crystal piece 121. It's getting longer.

Here, the center of the vibrating portion 121a is the intersection of the diagonal lines of the vibrating portion 121a in a plan view of the crystal element 120. The center of the excitation electrode unit 123 is the intersection of the diagonal lines of the excitation electrode unit 123 when the crystal element 120 is viewed in a plan view. The center of the crystal piece 121 is the intersection of the diagonal lines of the crystal piece 121 in a plan view of the crystal element 120.

Further, the one short side of the crystal piece 121 is the short side of the crystal piece 121 in which the connecting portions 124a are provided side by side in a plan view of the crystal element 120.

In this way, the distance from one short side of the crystal piece 121 to the center of the excitation electrode portion 123 can be made longer than the distance from one short side of the crystal piece 121 to the center of the crystal piece 121. .. From another viewpoint, the distance between the connection portion 124a and the center of the excitation electrode portion 123 can be made longer than the distance between the connection portion 124a and the center of the crystal piece 121. Therefore, it is possible to reduce the inhibition of the thickness slip vibration, which is the main vibration, due to the connection portion 124a being electrically connected to the mounting pad 111 by the bump (conductive adhesive 140 in the present embodiment). ..

(Experiment 1)
When the frequency of the crystal element 120 is 27.12 MHz, various dimensions are prepared, equivalent series resistance value inspection, frequency temperature characteristic inspection, and excitation level dependence inspection are performed, and an experiment to examine the non-defective product ratio in each inspection is conducted. went. As a result of Experiment 1, it was found that it is desirable that Le <We. Furthermore, it was found that it is more desirable that 0.90 <Le / We <1.00 is satisfied.

In this experiment, 50 first to third samples were prepared.

The first sample is one of the present examples, and We> Le, and 0.90 ≧ Le / We.

The second sample is another one of this embodiment, in which We> Le and 1.00> Le / We> 0.90.

The third sample is one of the comparative examples, Le> We, and Le / We ≧ 1.00.

Therefore, Le / We is different in the first sample to the third sample. The range of Le / We in each sample is as follows. First sample: 0.90 ≧ Le / We
Second sample: 1.00> Le / We> 0.90
Third sample: Le / We ≧ 1.00

Here, in the first sample to the third sample, the length of the side of the excitation electrode portion 123 parallel to the long side of the crystal piece 121, that is, parallel to Le and the long side of the crystal piece 121 which changes accordingly. Only the length Lm of the side of the vibrating portion 121a is changed.

Therefore, in the first sample to the third sample, there are parameters that are kept constant. The values of these constant parameters were empirically suitable values in consideration of the equivalent series resistance value. The parameters that are kept constant are the length of the long side of the crystal piece 121, the length of the short side of the crystal piece 121, the length of the side of the vibrating portion 121a parallel to the short side of the crystal piece 121, and the crystal. From the length We of the side of the excitation electrode portion 123 parallel to the short side of the piece 121, and the side of the vibrating portion 121a parallel to the long side of the crystal piece 121.
The distance d1 to the side of the excitation electrode portion 123 adjacent to the side of the vibrating portion 121a and the side of the vibrating portion 121a parallel to the short side of the crystal piece 121 are adjacent to the side of the vibrating portion 121a. It is the distance to the side of the exciting electrode unit 123.

The dimensions of the first sample to the third sample in Experiment 1 are as follows. Again, each predetermined value is an empirically suitable value in consideration of the equivalent series resistance value, and the following values are all the same in the first sample to the third sample. ing. The length of the long side of the crystal piece 121 is a predetermined value of 650 μm to 920 μm.
The length of the short side of the crystal piece 121 is a predetermined value of 550 μm to 690 μm.
Wm is a predetermined value of 350 μm to 580 μm.
We has a predetermined value of 250 μm to 550 μm.
d1 has a predetermined value of 5 μm to 150 μm.
The distance from the side of the vibrating portion 121a parallel to the short side n of the crystal piece 121 to the side of the exciting electrode portion 123 adjacent to the side of the vibrating portion 121a is a predetermined value of 20 μm to 150 μm.

In this experiment, each tolerance is as follows. The frequency tolerance of the crystal element 120 is ± 0.5%. The tolerance of each dimension is ± 5 μm.

In FIG. 6, when the frequency of the crystal element 120 is 27.12 MHz, various dimensions are prepared, equivalent series resistance value inspection, frequency temperature characteristic inspection, and excitation level dependence inspection are performed, and the ratio of non-defective products in each inspection is performed. It is a comparison table in which the judgment was made.

Here, each inspection will be described.

The equivalent series resistance value test is a test for measuring the equivalent series resistance value at room temperature (around 25 ° C.). In the equivalent series resistance value inspection, those with an equivalent series resistance value of 75Ω or less are regarded as non-defective products, those with an equivalent series resistance value greater than 75Ω are regarded as defective, and the number of non-defective products is divided by the number of samples to calculate the non-defective product ratio. are doing.

In this experiment, the equivalent series resistance value is based on 75Ω when making a judgment. When an oscillation circuit is formed using a crystal device on which a crystal element 120 is mounted, the required equivalent series resistance value of the crystal element 120 varies depending on the resonance frequency and the size of the crystal device, but the resonance frequency is 27. At 12 MHz, if the equivalent series resistance value is 75 Ω or less, a practical oscillation circuit can be formed in an electronic circuit mounted on a mobile communication device (for example, a communication terminal). Therefore, in this experiment, the equivalent series resistance value is 75Ω or less as an index.

The frequency temperature characteristic inspection measures the frequency temperature characteristic of how much the frequency changes with respect to the frequency at 25 ° C in the range of -15 ° C to 105 ° C, and has a smooth cubic curve. Is considered as a defective product if it deviates from the cubic curve, and the ratio of non-defective products is calculated from the number of non-defective products divided by the number of samples.

In this experiment, when making a judgment, whether or not the frequency temperature characteristic has a smooth cubic curve is used as a judgment criterion. When the crystal device on which the crystal element 120 is mounted is an oscillator (for example, a temperature-compensated oscillator), compensation is performed from this frequency temperature characteristic in order to keep the output frequency constant. Therefore, if the frequency temperature characteristic does not have a smooth cubic curve, it becomes difficult to perform compensation. Therefore, in this experiment, it is used as an index that the frequency temperature characteristic has a smooth cubic curve.

The excitation level dependence test investigates the increase and decrease of the frequency when the excitation level is increased, and the one whose frequency increases when the bell is raised by excitation is regarded as a good product, and the one whose frequency decreases is regarded as a good product. The non-defective product ratio is calculated by dividing the number of products by the number of samples.

In this experiment, when making a judgment, the increase / decrease in frequency when the excitation level is increased is used as the judgment criterion. In general, a crystal oscillator using a quartz element whose main vibration is thickness sliding vibration has an excitation current due to the fact that the relationship between the stress and strain of quartz is not linear and contains non-linear components. The frequency changes depending on the frequency, and the frequency also increases when the excitation level is increased. Therefore, when the frequency decreases when the excitation level is increased, the thickness slip vibration, which is the main vibration, is another factor, specifically,
It can be said that it is greatly affected by secondary vibration. Therefore, in this experiment, the increase / decrease in frequency is used as an index when the excitation level is increased.

In this experiment, the above-mentioned dimensions of each of the produced crystal elements were measured, Le / We was calculated, classified into Samples 1 to 3, and then each was inspected.

In FIG. 6, those with a non-defective product ratio of 80% or more and less than 100% are marked with "○", those with a non-defective product ratio of 50% or more and less than 80% are marked with "Δ", and those with a non-defective product ratio of 50% or less are marked with "x". ..

Sample 1 belongs to the range of 50% or more and less than 80% in the equivalent series resistance value inspection, and the judgment is “Δ”. Further, in the frequency temperature characteristic test and the excitation level dependence test, both were 80% or more and less than 100%, and the judgment was “◯”.

In sample 2, the equivalent series resistance value test, the frequency temperature characteristic test, and the excitation level dependence test were all 80% or more and less than 100%, and the judgment was “◯”.

In sample 3, the equivalent series resistance value test was 80% or more and less than 100%, and the judgment was “◯”. Further, in the frequency temperature characteristic test and the excitation level dependence test, both were 50% or more and less than 80%, and the judgment was "Δ".

From the above, it can be said that it is desirable that Le> We because the effect can be obtained on the frequency temperature characteristic and the excitation level dependence. Further, in order to reduce the increase in the equivalent series resistance value, it can be said that it is more desirable that 1.00> Le / We> 0.90.

(Experiment 2)
When the frequency of the crystal element 120 was 27.12 MHz, various dimensions were prepared, an equivalent series resistance value inspection was performed, and an experiment was conducted to check the ratio of non-defective products in the inspection. As a result of Experiment 2, it was found that it is desirable that 0.075> (Wm-We) / Wm> 0, that is, 0.035 Wm>d1> 0 is satisfied.

In this experiment, 50 fourth to 5th samples were prepared.

The fourth sample is one of the comparative examples, and 0 ≧ d1. Therefore, the fourth sample is in a state where We> Wm.

The fifth sample is this example, and 0.035 Wm> d1> 0.

The sixth sample is another one of the comparative examples, and d1> 0.035 Wm.

Therefore, d1 is different in the fourth sample to the sixth sample. The range of d1 in each sample is as follows.
Fourth sample: 0 ≧ d1
Fifth sample: 0.035 Wm>d1> 0
Sixth sample: d1 ≧ 0.035 Wm

Here, in the fourth sample to the sixth sample, the side of the vibrating portion 121a parallel to the long side of the crystal piece 121 is the side of the exciting electrode portion 123 adjacent to the side of the vibrating portion 121a, and the crystal piece 121. Only the distance to the side of the excitation electrode portion 123 parallel to the long side of the above, that is, the length of d1 and the length of the side of the vibrating portion 121a parallel to the short side of the crystal piece 121 that changes accordingly are changed. ..

Therefore, in the fourth sample to the sixth sample, there are parameters that are kept constant. The values of each of these constant parameters were empirically suitable values in consideration of the equivalent series resistance value. The parameters that are kept constant are the length of the long side of the crystal piece 121, the length of the short side of the crystal piece 121, the length of the side of the vibrating portion 121a parallel to the long side of the crystal piece 121, and Lm.
The length Le of the side of the excitation electrode portion 123 parallel to the long side of the crystal piece 121,
The length We of the side of the excitation electrode portion 123 parallel to the short side of the crystal piece 121, and
This is the distance from the side of the vibrating portion 121a parallel to the short side of the crystal piece 121 to the side of the exciting electrode portion 123 adjacent to the side of the vibrating portion 121a.

The dimensions of the fourth sample to the sixth sample in Experiment 2 are as follows. Again, each predetermined value is an empirically suitable value in consideration of the equivalent series resistance value, and the following values are all the same in the fourth sample to the sixth sample. ing.
The length of the long side of the crystal piece 121 is a predetermined value of 650 μm to 920 μm.
The length of the short side of the crystal piece 121 is a predetermined value of 550 μm to 690 μm.
Lm is a predetermined value of 535 μm to 600 μm.
Le has a predetermined value of 450 μm to 570 μm.
We has a predetermined value of 250 μm to 550 μm.
The distance from the side of the vibrating portion 121a parallel to the short side of the crystal piece 121 to the side of the exciting electrode portion 123 adjacent to the side of the vibrating portion 121a is a predetermined value of 5 μm to 150 μm.

In this experiment, each tolerance is as follows. The frequency tolerance of the crystal element 120 is ± 0.5%. The tolerance of each dimension is ± 5 μm.

FIG. 7 is a comparison table in which various dimensions were prepared, an equivalent series resistance value inspection was performed, a non-defective product ratio was examined, and a judgment was made when the frequency of the crystal element 120 was 27.12 MHz.

The equivalent series resistance value test is a test for measuring the equivalent series resistance value at room temperature (around 25 ° C.). In the equivalent series resistance value inspection, those with an equivalent series resistance value of 75Ω or less are regarded as non-defective products, those with an equivalent series resistance value greater than 75Ω are regarded as defective, and the number of non-defective products divided by the number of samples is used to calculate the non-defective product ratio. are doing.

In this experiment, the equivalent series resistance value is based on 75Ω when making a judgment. When an oscillation circuit is formed using a crystal device on which a crystal element 120 is mounted, the required equivalent series resistance value of the crystal element 120 varies depending on the resonance frequency and the size of the crystal device, but the resonance frequency is 27. At 12 MHz, if the equivalent series resistance value is 75 Ω or less, a practical oscillation circuit can be formed by an electronic circuit mounted on a mobile communication device (for example, a communication terminal). Therefore, in this experiment, the equivalent series resistance value is 75Ω or less as an index.

In this experiment, the above-mentioned dimensions of the produced crystal elements, particularly d1, were measured, classified into Samples 4 to 6, and then each was inspected.

In FIG. 7, those with a non-defective product ratio of 80% or more and less than 100% are marked with "○", those with a non-defective product ratio of 50% or more and less than 80% are marked with "Δ", and those with a non-defective product ratio of 50% or less are marked with "x". ..

In sample 4, the non-defective product ratio belongs to the range of 50% or less in the equivalent series resistance value inspection, and the judgment is "x".

In sample 5, the non-defective product ratio belonged to the range of 80% or more and less than 100% in the equivalent series resistance value inspection, and the judgment was “◯”.

In sample 6, the non-defective product ratio belonged to the range of 50% or more and less than 80% in the equivalent series resistance value inspection, and the judgment was “Δ”.

From the above, in order to reduce the increase in the equivalent series resistance value, it is desirable that 0.035 Wm> d1> 0, that is, 0.075> (Wm-We) / Wm> 0 is satisfied. I can say.

As described above, the crystal element 120 according to the present embodiment includes a crystal piece 121 having a substantially rectangular shape in a plan view, a substantially rectangular excitation electrode portion 123 provided on both main surfaces of the crystal piece 121, and an excitation electrode portion 123. A crystal element 120 comprising a metal pattern 122 composed of a connection wiring portion 124 extending from an excitation electrode portion 123 to an edge portion on one short side of the crystal piece 121. The length of the side of the excitation electrode portion 123 parallel to the short side is longer than the length of the side of the excitation electrode portion 123 parallel to the crystal piece 121.

As described above, assuming that the length of the side of the excitation electrode portion 123 parallel to the short side of the crystal piece 121 is We and the length of the side of the excitation electrode portion 123 parallel to the crystal piece 121 is Le, the present embodiment The following relationship holds with the crystal element 120.
We> Le

As described above, when an alternating voltage is applied to the metal pattern 122, the crystal piece 121 generates a thickness slip vibration, which is a main vibration, and a secondary vibration. There are at least two secondary vibrations, contour sliding vibration and bending vibration, and these vibrations are in the same direction as the main vibration displacement of the thickness sliding vibration whose vibration displacement is the main vibration. .. That is, in the crystal element 120 according to the present embodiment, as much electric charge as possible is accumulated in the excitation electrode portion 123 to easily generate the thickness slip vibration which is the main vibration, and the contour vibration and the bending vibration which are secondary vibrations are generated. It is hard to occur.

Therefore, by setting We> Le as in the crystal element 120 according to the present embodiment, secondary vibrations, specifically, contour slip vibrations and bending vibrations, are generated while securing the area of the excitation electrode portion 123. The amount generated can be reduced. As a result, it is possible to suppress the coupling of the thickness slip vibration, which is the main vibration, and the secondary vibration, and it is possible to improve the electrical characteristics of the crystal element 120.

In particular, when the crystal element 120 is miniaturized, specifically, when the length of the long side of the crystal piece 121 is 920 μm or less, the order of secondary vibration becomes low, so that the thickness is the main vibration. In the portion where the sliding vibration is performed, the influence of the bending vibration which is a secondary vibration becomes large, and the thickness sliding vibration which is the main vibration and the secondary vibration tend to be easily combined. By adopting a structure like the crystal element 120 according to the present embodiment, secondary vibration can be suppressed, and as a result, the thickness slip vibration, which is the main vibration, and the secondary vibration are combined. It is possible to reduce it,
The electrical characteristics can be improved. That is, it can be said that the crystal element 120 in the present embodiment is particularly effective when the crystal element 120 is miniaturized.

Further, in the crystal element 120 according to the present embodiment, the crystal piece 121 is provided along the substantially rectangular shape of the vibrating portion 121a and the edge portion of the vibrating portion 121a, and the peripheral portion 121b having a thin vertical thickness of the vibrating portion 121a is provided. The length of the side of the vibrating portion 121a parallel to the short side of the crystal piece 121 is longer than the length of the side of the exciting electrode portion 123 parallel to the short side of the crystal piece 121.

As described above, assuming that the length of the side of the vibrating portion 121a parallel to the short side of the crystal piece 121 is Wm, the crystal element 120 according to the present embodiment has the following relationship.
Wm> We

From another viewpoint, it can be said that the outer edge of the excitation electrode portion 123 exists inside the outer edge of the vibrating portion 121a when the crystal element 120 is viewed in a plan view. By doing so, when an alternating voltage is applied to the metal pattern 122, the thickness slip vibration, which is the main vibration leaked and propagated from the portion sandwiched between the excitation electrode portions 123, becomes the vibrating portion 121a and the peripheral portion 121b. It is possible to reduce the influence of the reflected vibration on the vibration of the portion sandwiched between the excitation electrode portions 123, which is reflected at the boundary portion, specifically, the intermediate portion. As a result, it is possible to improve the electrical characteristics while reducing the increase in the equivalent series resistance value.

Further, by using the mesa-shaped crystal piece 121 composed of the vibrating portion 121a and the peripheral portion 121b, the secondary vibration can be suppressed, and the secondary vibration and the thickness slip vibration which is the main vibration can be suppressed. It is possible to combine and suppress the deterioration of electrical characteristics.

Further, the crystal element 120 according to the present embodiment satisfies 0.90 <Le / We <1.00.

By doing so, it is possible to improve the electrical characteristics while reducing the increase in the equivalent series resistance value. For example, when 0.90> Le / We, the size of the area of the excitation electrode portion 123 becomes small in the miniaturized crystal element. Therefore, since the amount of electric charge accumulated in the excitation electrode portion 123 is reduced, the thickness slip vibration, which is the main vibration, is less likely to occur, and the equivalent series resistance value may increase. For example, when Le / We> 1.00, secondary vibrations such as contour slip vibration and bending vibration are likely to occur.
There is a risk that the electrical characteristics will deteriorate due to the combination of the secondary vibration and the thickness slip vibration, which is the main vibration. The effect is also clear from the experimental results of Experiment 1. Therefore, in this embodiment, it is desirable that 0.90 <Le / We <1.00.

Further, the crystal element 120 according to the present embodiment satisfies 0.075> (Wm-We) / Wm> 0.

From another viewpoint, the side of the excitation electrode portion 123 parallel to the long side of the crystal piece 121 and the side of the vibrating portion 121a adjacent to the long side and parallel to the long side of the crystal piece 121 If the distance to the side of is d1, 0.075> 2 × d1 / Wm> 0 is satisfied. Therefore, it can be said that d1 and Wm satisfy the following relationship.
0.0375Wm>d1> 0

By doing so, it is possible to improve the electrical characteristics while reducing the increase in the equivalent series resistance value. For example, when 0.075 <(Wm-We) / Wm, from another viewpoint, when 0.0375 Wm <d1, the area of the excitation electrode portion 123 becomes smaller in the miniaturized crystal element. It ends up. Therefore, the amount of electric charge accumulated in the excitation electrode portion 123 is reduced, and the thickness slip vibration, which is the main vibration, is less likely to occur, so that the equivalent series resistance value may increase. For example, when (Wm-We) / Wm <0, from another viewpoint, when d1 <0,
When viewed in a plan view, the outer edge of the excitation electrode portion 123 is located outside the outer edge of the vibrating portion 121a, and when an alternating voltage is applied to the metal pattern 122, it also vibrates in the intermediate portion of the peripheral portion 121b. It becomes. Therefore, the vibration becomes complicated, and the equivalent series resistance value may increase and the electrical characteristics may deteriorate. The effect is also clear from the experimental results of Experiment 2. Therefore, it is desirable that 0.075> (Wm-We) / Wm> 0, and from another viewpoint, 0.0375 Wm>d1> 0.

Further, in the crystal element according to the present embodiment, in a plan view, the center of the vibrating portion 121a and the center of the exciting electrode portion 123 overlap, and the distance from one short side of the crystal piece 121 to the center of the vibrating portion 121a is reached. The distance is longer than the distance from one short side of the crystal piece 121 to the center of the crystal piece 121.

As described above, two connecting portions 124a of the connecting wiring portion 124 are provided side by side on the edge of one short side of the crystal piece 121. Therefore, from another viewpoint, it can be said that the distance from the connecting portion 124a to the center of the vibrating portion 121a is longer than the distance from the connecting portion 124a to the center of the crystal piece 121.

Therefore, by doing so, when the connection portion 124a and the mounting pad 111 are electrically connected by using the bump (the conductive backing agent 140 in the present embodiment), the excitation electrode portion is provided by the bump. It is possible to reduce the influence on the vibration of the portion sandwiched between the 123s. As a result, it is possible to reduce that the vibration of the portion sandwiched between the excitation electrode portions 123 is hindered by being electrically connected by the bumps, the equivalent series resistance value becomes large, and the electrical characteristics deteriorate.

The crystal device according to the present embodiment has a substrate portion 110a provided with a crystal element 120 according to the present embodiment, a connection wiring portion 124, and a mounting pad 111 bonded with a conductive adhesive 140. The 110 and the lid 130 to be bonded to the base 110 are provided.

Since the crystal element 120 according to the present embodiment can improve the electrical characteristics while reducing the increase in the equivalent series resistance value, by mounting such a crystal element 120, the crystal in the present embodiment can be improved. Also in the device, it is possible to improve the electrical characteristics while reducing the increase in the equivalent series resistance value.

The present invention is not limited to the following embodiments, and may be implemented in various embodiments.

The device having a crystal element is not limited to the crystal unit. For example, it may be an oscillator having an integrated circuit element (IC) that generates a transmission signal by applying a voltage to the crystal element in addition to the crystal element. Further, for example, the crystal device may have an electronic element such as a thermistor in addition to the crystal element. Further, for example, the crystal device may be equipped with a constant temperature bath. In the crystal device, the structure of the substrate on which the crystal element is mounted may be appropriately configured. For example, the substrate may have an H-shaped cross section having recesses on the upper surface and the lower surface.

The crystal element may be a flat crystal piece without using a crystal piece composed of a vibrating portion and a peripheral portion.

Further, although the case where the crystal element has a recess formed by a first recess, a second recess and a third recess formed on the side surface including a predetermined side of the crystal piece, a number of recesses are formed. You may. Further, the concave portion may not be formed on the side surface including a predetermined side of the crystal piece.

The case where the connection portion of the crystal element and the mounting pad of the substrate are electrically connected by a conductive adhesive is described, but the connection portion and the mounting pad are mounted while the crystal element is mounted on the substrate portion of the substrate. For example, a metal bump may be used as long as it can be electrically connected. Further, for example, a wire made of metal, specifically, a gold wire or a silver wire may be used for the mounting pad and the connecting portion.

The case where the wiring portion of the connection wiring portion extends from the excitation electrode portion so as to be parallel to the long side of the crystal piece is described, but the excitation electrode portion and the connection portion can be electrically connected. If possible, the shape of the wiring portion does not matter.

Further, the crystal element may have a shape in which two sides of the excitation electrode portion parallel to the long side of the crystal piece bulge toward the outer edge of the crystal piece.

110 ・ ・ ・ Base 110a ・ ・ ・ Board part 110b ・ ・ ・ Frame part 111 ・ ・ ・ Mounting pad 112 ・ ・ ・ External terminal 120 ・ ・ ・ Crystal element 121 ・ ・ ・ Crystal piece 121a ・ ・ ・ Vibration part 121b ・ ・ ・・ Peripheral part 122 ・ ・ ・ Metal pattern 123 ・ ・ ・ Excitation electrode part 124 ・ ・ ・ Connection wiring part 124a ・ ・ ・ Connection part 124b ・ ・ ・ Wiring part 125 ・ ・ ・ Recessed part 125a ・ ・ ・ First recessed part 125b ・ ・・ Second recess 125c ・ ・ ・ Third recess 130 ・ ・ ・ Lid body 140 ・ ・ ・ Conductive adhesive

Claims (4)

A crystal piece that is approximately rectangular when viewed in a plane,
A metal composed of a substantially rectangular excitation electrode portion provided on both main surfaces of the crystal piece and a connection wiring portion extending from the excitation electrode portion to the edge on one short side of the crystal piece. A crystal element with a pattern,
The length of the side of the excitation electrode portion parallel to the short side of the crystal piece is longer than the length of the side of the excitation electrode portion parallel to the long side of the crystal piece.
The crystal piece is composed of a vibrating portion having a substantially rectangular parallelepiped shape and a peripheral portion provided along the edge portion of the vibrating portion and having a thickness thinner in the vertical direction than the vibrating portion.
The length of the side of the vibrating portion parallel to the short side of the crystal piece is longer than the length of the side of the exciting electrode portion parallel to the short side of the crystal piece.
The length of the long side of the crystal piece is a predetermined value of 650 μm to 920 μm.
The length of the short side of the crystal piece is a predetermined value of 550 μm to 690 μm.
Wm is a predetermined value of 350 μm to 580 μm for the length of the side of the vibrating portion parallel to the short side of the crystal piece.
We has a predetermined value of 250 μm to 550 μm for the length of the side of the excitation electrode portion parallel to the short side of the crystal piece.
The distance between the side of the excitation electrode portion parallel to the long side of the crystal piece and the side of the vibrating portion adjacent to the long side and parallel to the long side of the crystal piece. D1 has a predetermined value of 5 μm to 150 μm.
The distance from the side of the vibrating portion parallel to the short side of the crystal piece to the side of the exciting electrode portion adjacent to the side of the vibrating portion is a predetermined value of 20 μm to 150 μm.
The frequency of the crystal element is 27.12 MHz.
When the length of the side of the excitation electrode portion parallel to the long side of the crystal piece is Le.
A crystal element characterized by satisfying 0.90 <Le / We <1.00. A crystal piece that is approximately rectangular when viewed in a plane,
A metal composed of a substantially rectangular excitation electrode portion provided on both main surfaces of the crystal piece and a connection wiring portion extending from the excitation electrode portion to the edge on one short side of the crystal piece. A crystal element with a pattern,
The length of the side of the excitation electrode portion parallel to the short side of the crystal piece is longer than the length of the side of the excitation electrode portion parallel to the long side of the crystal piece.
The crystal piece is composed of a vibrating portion having a substantially rectangular parallelepiped shape and a peripheral portion provided along the edge portion of the vibrating portion and having a thickness thinner in the vertical direction than the vibrating portion.
The length of the side of the vibrating portion parallel to the short side of the crystal piece is longer than the length of the side of the exciting electrode portion parallel to the short side of the crystal piece.
The length of the long side of the crystal piece is a predetermined value of 650 μm to 920 μm.
The length of the short side of the crystal piece is a predetermined value of 550 μm to 690 μm.
The length Lm of the side of the vibrating portion parallel to the long side of the crystal piece is a predetermined value of 535 μm to 600 μm.
The length Le of the side of the excitation electrode portion parallel to the long side of the crystal piece is a predetermined value of 450 μm to 570 μm.
The length We of the side of the excitation electrode portion parallel to the short side of the crystal piece is a predetermined value of 250 μm to 550 μm.
The distance from the side of the vibrating portion parallel to the short side of the crystal piece to the side of the exciting electrode portion adjacent to the side of the vibrating portion is a predetermined value of 5 μm to 150 μm.
The frequency of the crystal element is 27.12 MHz.
When the length of the side of the vibrating portion parallel to the short side of the crystal piece is Wm,
0. A crystal element characterized in that 0 75> (Wm-We) / Wm> 0 is satisfied. The crystal element according to claim 1 or 2.
In plan view
The center of the vibrating portion and the center of the exciting electrode portion overlap each other.
A crystal element characterized in that the distance from one short side of the crystal piece to the center of the vibrating portion is longer than the distance from one short side of the crystal piece to the center of the crystal piece. The crystal element according to claim 1 to 3,
A substrate having a substrate portion provided with a mounting pad that is adhered to the connection wiring portion with a conductive adhesive, and a substrate.
The lid to be joined to the substrate and
A crystal device that features.

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