JP6851550B2 - Alignment method of optical element - Google Patents

Description

The present invention relates to an alignment technique when mounting an optical element on a mounting substrate.

When an optical element represented by a semiconductor laser element is used as an optical communication device, the optical element is mounted on a mounting substrate and optically coupled. In order to achieve high coupling efficiency between optical elements, it is required to accurately align each optical element.
The position adjusting method of the semiconductor laser element is mainly classified into an active alignment method and a passive alignment method. The active alignment method is a method of driving a semiconductor laser element and observing the light receiving intensity of the photodetector using the input signal of the semiconductor laser element in the driven state to adjust the position.
On the other hand, the passive alignment method is a method of adjusting the position by using the image signal of the semiconductor laser element without driving the semiconductor laser element. A technique has been proposed in which the mounting accuracy of a semiconductor laser device is improved by appropriately arranging alignment marks for position adjustment using this passive alignment method of position adjustment method.

For example, in the semiconductor laser device disclosed in Patent Document 1, the first alignment mark and the second alignment mark are defined as the longitudinal direction of the waveguide formed in the active layer when the semiconductor laser device is viewed in a plan view from the stacking direction. Has a constant width in the direction orthogonal to each other. The first alignment mark extends along the longitudinal direction of the waveguide in a state where one end thereof is in contact with the cut surface of the semiconductor laser device. On the other hand, the second alignment mark is located on the side opposite to the cut surface side with reference to the other end opposite to one end of the first alignment mark in contact with the cut surface of the semiconductor laser element, and is located along the longitudinal direction of the waveguide. It is postponed.
With the above-described configuration, in the semiconductor laser device disclosed in Patent Document 1, if the second alignment mark is located at a point having a predetermined positional relationship with respect to the end point of the first alignment mark, those two points are It serves as an absolute reference regardless of the state of the cut surface of the semiconductor laser device, and accurate alignment is realized based on that point.

Japanese Unexamined Patent Publication No. 2015-23103

In the semiconductor laser device described in Patent Document 1 described above, when the semiconductor laser device is viewed in a plan view from the stacking direction, the relative misalignment with the alignment mark can be reduced, but the misalignment in the stacking direction can be reduced. There was a problem that it could not be adjusted. When the semiconductor laser element is viewed in a plan view from the stacking direction, it is effective to use the position adjustment method of the active alignment method in order to adjust the plane direction and the stacking direction. However, the active alignment method of the position adjustment method has a problem that it takes time to adjust the position.

The present invention has been made to solve the above problems, and an object of the present invention is to reduce the time required for position adjustment in the position adjustment method of the active alignment method.

Core method adjustment of the optical device according to the present invention includes the steps of first element mounted on the mounting substrate to emit light from the emission surface, the light having an incident surface of the exit surface facing the light of the first element A step of imaging the reflected light obtained by reflecting the light emitted from the first element on the inclined surface formed on the substrate layer of the second element formed by laminating the waveguide and the substrate layer. , The second element is moved in the stacking direction of the optical waveguide and the substrate layer so that the imaging position of the reflected light coincides with the target point, and the relative positional relationship between the first element and the second element is determined. The step of adjusting and the step of moving the second element in the stacking direction by a predetermined amount after adjusting the relative positional relationship, and directing the light emitted from the first element toward the center of the optical waveguide of the second element. And, after directing the light emitted from the first element to the center of the optical waveguide, the step of aligning the second element by using the light detection function provided by the second element is provided. ..

According to the present invention, it is possible to shorten the time required for position adjustment in the position adjustment method of the active alignment method.

It is a perspective view which shows the outline of the optical element apparatus which concerns on Embodiment 1. FIG. It is a perspective view of the optical passive element of the optical element apparatus which concerns on Embodiment 1. FIG. It is a top view which shows the structure of the optical element apparatus which concerns on Embodiment 1. FIG. 4A to 4D are cross-sectional views taken along the line AA of FIG. It is a perspective view which shows the outline of the optical element apparatus which concerns on Embodiment 2. FIG. It is a perspective view which shows the structure of the optical passive element of the optical element apparatus which concerns on Embodiment 2. FIG. It is a top view which shows the structure of the optical element apparatus which concerns on Embodiment 2. FIG. FIG. 7 is a cross-sectional view taken along the line BB of FIG. It is a perspective view which shows the outline of the optical element apparatus which concerns on Embodiment 3. FIG. FIG. 9 is a cross-sectional view taken along the line CC of FIG. It is a figure which shows the modification of the optical element apparatus which concerns on Embodiment 3. It is a top view which shows the structure of the optical element apparatus which concerns on Embodiment 4. FIG. FIG. 12 is a cross-sectional view taken along the line DD of FIG. It is a figure which shows the modification of the optical element apparatus which concerns on Embodiment 4. FIG.

Hereinafter, in order to explain the present invention in more detail, a mode for carrying out the present invention will be described with reference to the accompanying drawings.
Embodiment 1.
FIG. 1 is a perspective view showing an outline of the optical element device 1 according to the first embodiment.
The optical element device 1 includes a mounting substrate 10, a semiconductor optical amplifier (first element) 20, and an optical passive element (second element) 30 as main components.
The mounting board 10 is a board for mounting the semiconductor optical amplifier 20 and the optical passive element 30. The mounting substrate 10 has a positioning mark (not shown) in a region where the optical passive element 30 is mounted. The positioning mark is a mark for positioning the optical passive element 30 by a passive alignment method with reference to the mounting position of the semiconductor optical amplifier 20 mounted on the mounting substrate 10. In the following, it is assumed that the semiconductor optical amplifier 20 is mounted on the mounting board 10.

The semiconductor optical amplifier 20 is an end face light emitting type optical element having an active layer parallel to the mounting substrate 10. The semiconductor optical amplifier 20 emits naturally emitted light when a current flows. The emitted light is incident on the optical passive element 30. The semiconductor optical amplifier 20 is made of a semiconductor compound such as InP as a material.

The optical passive element 30 is composed of, for example, a substrate layer 31 made of a Silicon On Insulator (SOI) substrate and a Si layer 32 which is an optical waveguide that propagates light. The optical passive element 30 has an internal light detection function. The Si layer 32 has an incident surface 32a on a surface facing the exit surface 21 of the semiconductor optical amplifier 20. By adjusting the position of the optical passive element 30 described later, the semiconductor optical amplifier 20 and the optical passive element 30 are arranged so that the light emitted from the emitting surface 21 is incident on the optical waveguide from the incident surface 32a of the optical passive element 30. Optical coupling is performed.
For ease of explanation, the coordinate axes of XYZ are shown in the figure as appropriate. The direction in which the semiconductor optical amplifier 20 emits naturally emitted light is the + X direction, and the two directions perpendicular to each other in the X-axis direction are the Y-axis direction and the Z-axis direction. Further, the width direction of the optical passive element 30 coincides with the X-axis direction, the stacking direction of the optical passive element 30 coincides with the Y-axis direction, and the depth direction of the optical passive element 30 coincides with the Z-axis direction.

The substrate layer 31 of the optical passive element 30 includes a recess 33 in a part of the substrate surface. The recess 33 is formed by cutting out a part of a side formed by the surface on which the incident surface 32a is formed and the surface of the substrate layer 31. The shape of the recess 33 is a shape in which the substrate layer 31 is cut out in the shape of a triangular prism. Further, the recess 33 has an inclined surface 34 which is a plane having an inclination with respect to the substrate surface of the substrate layer 31. As shown in FIG. 2, the height of the optical passive element 30 of the inclined surface 34 is lower in the stacking direction (Y-axis direction) from the center of the optical passive element 30 toward the surface side on which the incident surface 32a is formed. Has an inclination. The recess 33 and the inclined surface 34 are formed only in the substrate layer 31, and are separated from the Si layer 32 having the optical waveguide by a certain distance. Since the recess 33 and the inclined surface 34 can be formed by using the semiconductor etching technique, the recess 33 and the inclined surface 34 can be introduced only in the substrate layer 31 separated from the Si layer 32 having the optical waveguide by a certain distance.

FIG. 2 is a perspective view showing the configuration of the optical passive element 30 of the optical element device 1 according to the first embodiment. The relationship between the optical waveguide of the optical passive element 30 and the inclined surface 34 will be described with reference to FIG.
A line segment extending in the Y-axis direction and passing through the center 32b of the optical waveguide of the Si layer 32, and on a plane parallel to the XY plane, pass through the center point 35 of the inclined surface 34 and incline. It intersects with the line segment L2 extending along the slope of the surface 34. That is, the position of the center 32b of the optical waveguide in the Z-axis direction and the position of the center point 35 of the inclined surface 34 in the Z-axis direction coincide with each other.

Next, the reflection of light on the inclined surface 34 will be described with reference to FIGS. 3 and 4.
FIG. 3 is a top view showing the configuration of the optical device 1 according to the first embodiment. 4A to 4D are cross-sectional views taken along the line AA of FIG.
In FIGS. 3 and 4, it is assumed that the mounting board 10 of the optical passive element 30 is positioned in the plane direction in advance by the passive alignment method using the positioning marks provided on the mounting surface of the mounting board 10. .. Since the positioning technique of the optical passive element 30 by the passive alignment method is known, the description thereof will be omitted.

The inclined surface 34 is subjected to a surface treatment for reflecting light, for example, a metal coating. The inclined surface 34 reflects the emitted light P emitted from the semiconductor optical amplifier 20 by the surface treatment, and becomes the reflected light Pa, Pb, Pc. The camera 101 captures the reflected light Pa, Pb, and Pc, and outputs the captured data to a control device (not shown). The control device analyzes the input imaging data and evaluates the relative positional relationship between the semiconductor optical amplifier 20 and the optical passive element 30. The control device controls a drive device (not shown) connected to the optical passive element 30 based on the evaluation result, and moves the optical passive element 30 in the Y-axis direction.

As shown in FIGS. 4A and 4B, when the position of the optical passive element 30 is moved in the Y-axis direction, the imaging position of the reflected light Pa in the camera 101 moves in the X-axis direction. The control device performs the above-mentioned control so that the imaging position of the reflected light Pa in the camera 101 coincides with the target point, and moves the optical passive element 30 in the Y-axis direction. As a result, the semiconductor optical amplifier 20 and the optical passive element 30 are adjusted so as to have a target relative positional relationship. As the target point described above, for example, a point Q (see FIG. 4A) in which the imaging position of the reflected light Pa in the camera 101 is closest to the semiconductor optical amplifier 20 side can be set.

After adjusting the semiconductor optical amplifier 20 and the optical passive element 30 to a target relative positional relationship, the control device moves the optical passive element 30 in the positive direction in the Y-axis direction by a predetermined amount. The movement directs the emitted light P toward the center 32b of the optical waveguide. Here, the amount to be moved in the positive direction in the Y-axis direction is set based on the positional relationship between the target point described above and the center 32b of the optical waveguide. By the process described above, the first alignment process of the semiconductor optical amplifier 20 and the optical passive element 30 is completed.

Then, as the second alignment process, the optical passive element 30 uses the photodetection function to calculate the detection intensity of the naturally emitted light emitted by the semiconductor optical amplifier 20. The control device adjusts the position of the optical passive element 30 based on the calculated detection intensity.
The exit surface 21 of the semiconductor optical amplifier 20 and the optical waveguide of the optical passive element 30 are optically coupled by the first alignment and the second alignment described above.

Further, as shown in FIGS. 4C and 4D, the reflection directions of the reflected lights Pc and Pd change depending on the change in the inclination angle of the inclined surface 34. Therefore, the arrangement position of the camera 101 can be appropriately set depending on the inclination angle of the inclined surface 34.

As described above, according to the first embodiment, the semiconductor optical amplifier 20 having the optical waveguide for propagating light, the emission surface 21 of the light, the optical waveguide for propagating light, and the emission of the semiconductor optical amplifier 20. An optical passive element 30 having an incident surface 32a of light facing the surface 21 is provided, and the optical passive element 30 is formed on a substrate layer 31 with an inclined surface 34 for reflecting light emitted from a semiconductor optical amplifier 20. Since the recess 33 is formed at a position separated from the optical waveguide by a certain distance, the semiconductor optical amplifier 20 and the light are compared with the case where the position adjustment of the active alignment method is performed using only the light detection function. The time required for the alignment process with the passive element 30 can be shortened.

Embodiment 2.
FIG. 5 is a perspective view showing an outline of the optical device device 1A according to the second embodiment.
The optical element device 1A of the second embodiment is configured by modifying the shape of the concave portion of the optical passive element 30A.
In the following, the same or corresponding parts as the components of the optical element device 1 of the invention according to the first embodiment are designated by the same reference numerals as those used in the first embodiment, and the description thereof will be omitted or simplified. To become. Further, in the following, it is assumed that the semiconductor optical amplifier 20 is mounted on the mounting board 10.

As shown in FIG. 5, the substrate layer 31 of the optical passive element 30A of the second embodiment includes a recess 33A in a part of the substrate surface. The recess 33A is formed by cutting out a part of a side formed by the surface on which the incident surface 32a is formed and the surface of the substrate layer 31. The shape of the recess 33A is a shape in which the substrate layer 31 is cut out in the shape of a triangular pyramid. Specifically, the recess 33A is formed by cutting out so that the apex 38 of the triangular pyramid is located on the substrate surface of the substrate layer 31 and the base of the triangular pyramid is located on the surface side where the incident surface 32a is formed. The two side surfaces of the notched triangular pyramid form the two inclined surfaces 36 and 37 that are inclined with respect to the substrate surface of the substrate layer 31.

At the side where the inclined surface 36 and the inclined surface 37 intersect, the height of the optical passive element 30A is low in the stacking direction (Y-axis direction) from the center of the optical passive element 30A toward the surface side on which the incident surface 32a is formed. Has an inclination. The recess 33A and the inclined surfaces 36 and 37 are formed only in the substrate layer 31 and are separated from the Si layer 32 having the optical waveguide by a certain distance. The recess 33A and the inclined surfaces 36 and 37 can be introduced only into the substrate layer 31 which is separated from the Si layer 32 having the optical waveguide by a certain distance.

FIG. 6 is a perspective view showing the configuration of the optical passive element 30A of the optical element device 1A according to the second embodiment. The relationship between the optical waveguide of the optical passive element 30A and the inclined surfaces 36 and 37 will be described with reference to FIG.
A line segment extending in the Y-axis direction and passing through the center 32b of the optical waveguide of the Si layer 32, and on a plane parallel to the XY plane, pass through the apex 38 of the triangular pyramid of the recess 33A. The line segment L4 extending along the slope of the slope 36 or the slope 37 intersects. That is, the position of the center 32b of the optical waveguide in the Z-axis direction and the position of the apex 38 of the triangular pyramid of the recess 33A in the Z-axis direction coincide with each other.

Next, the reflection of light on the inclined surfaces 36 and 37 will be described with reference to FIGS. 7 and 8.
FIG. 7 is a top view showing the configuration of the optical element device 1A according to the second embodiment.
FIG. 8 is a cross-sectional view taken along the line BB of FIG.
In FIGS. 7 and 8, similarly to the first embodiment, the mounting substrate 10 of the optical passive element 30A is positioned in the plane direction by the passive alignment method.

The inclined surfaces 36 and 37 are subjected to surface treatment for reflecting light, for example, a metal coating. The inclined surfaces 36 and 37 reflect the emitted light P emitted from the semiconductor optical amplifier 20 and use it as the reflected light Pd. The camera 101 captures the reflected light Pd and outputs the captured data to the control device. The control device analyzes the imaging data and evaluates the relative positional relationship between the semiconductor optical amplifier 20 and the optical passive element 30A. The control device controls the drive device connected to the optical passive element 30A based on the evaluation result, and moves the optical passive element 30A in the Y-axis direction.

Since the recess 33A has two inclined surfaces 36 and 37, the optical passive element 30A can be added in the Y-axis direction by using the recess 33A to align the mounting substrate 10 in the plane direction. First, when the position of the optical passive element 30A is moved in the Y-axis direction, the imaging position of the reflected light Pd in the camera 101 is moved in the X-axis direction. Next, when the optical passive element 30A is moved in the Z-axis direction shown in FIG. 6, the imaging position in the camera 101 moves in the Y-axis direction. For example, when the position of the optical passive element 30A is moved from the point Ra shown in FIG. 7 to the point Rb in the Z-axis direction, the imaging position of the reflected light Pd in the camera 101 moves from the left to the right of the paper in FIG. Then move to the left again. When the image pickup position of the reflected light Pd in the camera 101 comes to the rightmost side of the paper surface of FIG. 7, the mounting substrate 10 is aligned in the plane direction.

After that, the control device performs the above-mentioned control while moving the optical passive element 30A in the Y-axis direction so that the imaging position of the reflected light Pd in the camera 101 coincides with the target point. As a result, the semiconductor optical amplifier 20 and the optical passive element 30A are adjusted so as to have a target relative positional relationship. As the target point described above, for example, a point Q (see FIG. 8) in which the imaging position of the reflected light Pd in the camera 101 is closest to the semiconductor optical amplifier 20 side can be set.

After adjusting the semiconductor optical amplifier 20 and the optical passive element 30A to a target relative relationship, the control device moves the optical passive element 30A in the positive direction in the Y-axis direction by a predetermined amount. Here, the amount to be moved in the positive direction in the Y-axis direction is set based on the positional relationship between the target point described above and the center 32b of the optical waveguide. This completes the first alignment process of the semiconductor optical amplifier 20 and the optical passive element 30A.

Then, as the second alignment process, the optical passive element 30A uses the photodetection function to calculate the detection intensity of the naturally emitted light emitted by the semiconductor optical amplifier 20. The control device adjusts the position of the optical passive element 30A based on the calculated detection intensity.
By the first alignment and the second alignment described above, the exit surface 21 of the semiconductor optical amplifier 20 and the optical waveguide of the optical passive element 30A are optically coupled.

Also in the second embodiment, the arrangement position of the camera 101 can be appropriately set depending on the inclination angles of the inclined surfaces 36 and 37.

As described above, according to the second embodiment, the recess 33A is provided by cutting out a part of the side formed by the surface on which the incident surface 32a is formed and the surface of the substrate layer 31, and the shape thereof is a triangular weight. Since the shape is notched in the shape, the optical passive element can be added in the Y-axis direction to align the mounting substrate in the plane direction. Further, as in the first embodiment, the time required for the alignment process between the semiconductor optical amplifier and the optical passive element can be shortened as compared with the case where the position adjustment of the active alignment method is performed using only the photodetection function. it can.

Embodiment 3.
FIG. 9 is a perspective view showing an outline of the optical device device 1B according to the third embodiment.
FIG. 10 is a cross-sectional view taken along the line CC of FIG.
The optical element device 1B of the third embodiment is configured by changing the arrangement of the optical passive element 30B and the camera 101.
In the optical element device 1B of the third embodiment, the substrate layer 31 of the optical passive element 30B is arranged so as to face the mounting substrate 10.
In the following, the same or corresponding parts as the components of the optical element device 1B according to the first embodiment are designated by the same reference numerals as those used in the first embodiment, and the description thereof will be omitted or simplified. .. Further, in the following, it is assumed that the semiconductor optical amplifier 20 is mounted on the mounting board 10.

The configuration of the optical passive element 30B shown in FIGS. 9 and 10 is the same as that of the first embodiment, and has a substrate layer 31, a Si layer 32, and a recess 33. On the other hand, the optical passive element 30B is arranged so that the substrate layer 31 faces the mounting substrate 10 and the Si layer 32 having an optical waveguide is the uppermost layer. Further, the mounting substrate 10 is made of a material that does not absorb the reflected light reflected by the inclined surface 34 of the optical passive element 30B. Since the reflected light is not absorbed by the mounting board 10, the reflected light is imaged by the camera 101 arranged below the mounting board 10.

Similar to the first embodiment, the optical passive element 30B reflects the emitted light P emitted from the semiconductor optical amplifier 20 on the inclined surface 34 to obtain the reflected light Pe. The camera 101 captures the reflected light Pe and outputs the captured data to the control device. The control device analyzes the input imaging data and evaluates the relative positional relationship between the semiconductor optical amplifier 20 and the optical passive element 30. The control device controls the drive device connected to the optical passive element 30 based on the evaluation result, and moves the optical passive element 30 in the Y-axis direction.

The control device performs the above-mentioned control while moving the optical passive element 30B in the Y-axis direction so that the imaging position of the reflected light Pe in the camera 101 coincides with the target point. As a result, the semiconductor optical amplifier 20 and the optical passive element 30B are adjusted so as to have a target relative positional relationship. Since the first alignment process and the second alignment process are the same as those in the first embodiment, detailed description thereof will be omitted.

FIG. 11 is a diagram showing a modified example of the optical element device 1B according to the third embodiment.
When the mounting substrate 10 absorbs the reflected light Pe, a hole portion 11 for passing the reflected light Pe is formed in the mounting substrate 10. The camera 101 captures the reflected light Pe that has passed through the hole 11. As a result, the material of the mounting substrate 10 is not limited and can be freely selected.

As described above, according to the third embodiment, the mounting board 10 on which the semiconductor optical amplifier 20 and the optical passive element 30 are mounted is provided, and the mounting board 10 is a material that does not absorb the reflected light reflected by the inclined surface 34. Or because it is configured to include a hole 11 through which the reflected light passes, the reflected light can be imaged from the non-mounting surface of the mounting substrate 10. Further, when the hole portion 11 is provided, the material of the mounting substrate 10 can be freely selected.

In the third embodiment described above, the substrate layer 31 of the optical passive element 30 shown in the first embodiment is opposed to the mounting substrate 10, and the reflected light reflected by the inclined surface 34 is arranged below the mounting substrate 10. The case of imaging with 101 is shown. Not limited to this, the substrate layer 31 of the optical passive element 30A shown in the second embodiment is arranged so as to face the mounting substrate 10, and the reflected light reflected by the inclined surfaces 36 and 37 is transmitted to the camera 101. It may be configured to image with.

Embodiment 4.
FIG. 12 is a top view showing the configuration of the optical device device 1C according to the fourth embodiment.
FIG. 13 is a cross-sectional view taken along the line DD of FIG.
The optical passive element 30C of the fourth embodiment passes the naturally emitted light emitted from the semiconductor optical amplifier 20 without absorbing it in the substrate layer 31, reflects it on the inclined surface 34, and outputs the reflected light to the camera 101 side. To do.
In the following, the same or corresponding parts as the components of the optical element devices 1 and 1B according to the first and third embodiments are designated by the same reference numerals as those used in the first embodiment, and the description thereof will be omitted. Or simplify. Further, in the following, it is assumed that the semiconductor optical amplifier 20 is mounted on the mounting board 10.

The optical passive element 30C changes the formation position of the recess 33 with respect to the optical passive element 30 shown in the first embodiment. The recess 33 is formed so as to cut out a part of the side of the semiconductor optical amplifier 20 on the surface of the substrate layer 31. The recess 33 has an inclined surface 34 which is a plane having an inclination with respect to the substrate surface of the substrate layer 31. As shown in FIG. 13, the height of the optical passive element 30 is the stacking direction (Y-axis) of the inclined surface 34 from the center of the optical passive element 30C toward the surface side facing the surface on which the incident surface 32a is formed. It has a downward slope in the direction). The recess 33 and the inclined surface 34 are formed only in the substrate layer 31, and are separated from the Si layer 32 having the optical waveguide by a certain distance. Since the recess 33 and the inclined surface 34 can be formed by using the semiconductor etching technique, the recess 33 and the inclined surface 34 can be introduced only in the substrate layer 31 separated from the Si layer 32 having the optical waveguide by a certain distance.

Although not shown, a line segment extending in the Y-axis direction in FIG. 13 and passing through the center 32b of the optical waveguide of the Si layer 32 and an inclined surface 34 on a plane parallel to the XY plane. It passes through the center point of the above and intersects with a line segment extending along the inclination of the inclined surface 34. That is, the position of the center 32b of the optical waveguide in the Z-axis direction and the position of the center point of the inclined surface 34 in the Z-axis direction coincide with each other.

Further, the mounting substrate 10 is made of a material that does not absorb the reflected light reflected by the inclined surface 34 of the optical passive element 30C. Since the reflected light is not absorbed by the mounting board 10, the reflected light is imaged by the camera 101 arranged below the mounting board 10.
Since the first alignment process and the second alignment process are the same as those in the first embodiment, detailed description thereof will be omitted.

FIG. 14 is a diagram showing a modified example of the optical device device 1C according to the fourth embodiment.
When the mounting substrate 10 absorbs the reflected light, a hole portion 11 for passing the reflected light is formed in the mounting substrate 10. The camera 101 captures the reflected light that has passed through the hole 11. As a result, the material of the mounting substrate 10 is not limited and can be freely selected.

As described above, according to the fourth embodiment, the mounting board 10 on which the semiconductor optical amplifier 20 and the optical passive element 30 are mounted is provided, and the mounting board 10 is a material that does not absorb the reflected light reflected by the inclined surface 34. Or because it is configured to include a hole 11 through which the reflected light passes, the reflected light can be imaged from the non-mounting surface of the mounting substrate 10. As a result, the degree of freedom in the configuration of the optical passive element 30 can be increased. Further, when the hole portion 11 is provided, the material of the mounting substrate 10 can be freely selected.

In the fourth embodiment described above, the case where the formation position of the recess 33 of the optical passive element 30 shown in the first embodiment is changed is shown. The configuration is not limited to this, and the configuration may be such that the formation position of the recess 33A of the optical passive element 30A shown in the second embodiment is changed.

In the above-described first to fourth embodiments, the optical passive elements 30, 30A, 30B, and 30C are configured to form recesses having an inclined surface, but the optical passive elements 30, 30A, 30B, and 30C are shown. Not limited to, at least the element to which light is incident includes a recess having an inclined surface.

In addition to the above, the present invention allows free combination of each embodiment, modification of any component of each embodiment, or omission of any component in each embodiment within the scope of the invention. It is possible.

The optical element device according to the present invention is preferably applied to an optical device or the like that requires high coupling efficiency between optical elements.

1,1A, 1B, 1C optical element device, 10 mounting board, 11 holes, 20 semiconductor optical amplifier, 21 exit surface, 30, 30A, 30B, 30C optical passive element, 31 substrate layer, 32 Si layer, 32a incident surface , 32b Center of optical waveguide, 33, 33A recess, 34, 36, 37 inclined surface, 35 center point, 38 apex.

Claims (2)

The step in which the first element mounted on the mounting board emits light from the emission surface,
An optical waveguide having an entrance surface of the exit surface facing the light of the first element, in the inclined surface formed on the substrate layer of the second element configured by laminating a substrate layer, said first The step of capturing the reflected light obtained by reflecting the light emitted from the element of
The second element is moved in the stacking direction of the optical waveguide and the substrate layer so that the imaging position of the reflected light coincides with the target point, and the first element and the second element are combined with each other. Steps to adjust the relative positional relationship of
After adjusting the relative positional relationship, the second element is moved in the stacking direction by a predetermined amount, and the light emitted from the first element is directed to the center of the optical waveguide of the second element. When,
A step of directing the light emitted from the first element toward the center of the optical waveguide and then aligning the second element using the photodetection function provided in the second element.
A method for aligning an optical element, which comprises. To the imaging position of the reflected light is coincident with the point of said object, by repeating the step of adjusting the relative positional relationship between said first element and said second element, and a step of imaging the reflected light The method for aligning an optical element according to claim 1.

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