JP6829192B2 - Polishing method - Google Patents

Description

The present invention relates to a polishing composition. More specifically, the present invention relates to a polishing composition preferably used for polishing a semiconductor substrate such as a silicon wafer or other polishing object.

Precision polishing using a polishing liquid is performed on the surface of materials such as metals, metalloids, non-metals, and oxides thereof. For example, the surface of a silicon wafer used as a component of a semiconductor product is generally finished into a high-quality mirror surface through a wrapping step (coarse polishing step) and a polishing step (precision polishing step). The polishing step typically includes a pre-polishing step (pre-polishing step) and a final polishing step (final polishing step). Patent Documents 1 to 3 are mentioned as technical documents relating to a polishing composition mainly used for polishing a semiconductor substrate such as a silicon wafer. Patent Document 4 relates to a polishing liquid for a CMP process.

Japanese Unexamined Patent Publication No. 2005-268667 International Publication No. 2012/6757 Japanese Unexamined Patent Publication No. 2014-041978 International Publication No. 2004/100242

In recent years, the area of semiconductor substrates and other substrates such as silicon wafers has increased due to the increase in diameter, and therefore improvement in substrate flatness is desired. Under such circumstances, there is a problem that a desired flatness cannot be obtained by polishing using a conventional polishing composition.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a polishing composition that obtains good flatness.

According to the present invention, the value of Wc is the largest when the compatibility of the polishing composition with the polishing pad is Wp, the compatibility with the polishing object is Ww, and the compatibility with the polishing object holder is Wc. A polishing composition that meets is provided.
According to such a polishing composition, the flatness of the substrate can be improved.

In one aspect, when the receding contact angle of the polishing composition with respect to the polishing pad is Cp, the receding contact angle with respect to the polishing object is Cw, and the receding contact angle with respect to the polishing object holder is Cc, the value of Cc is the largest. Polishing compositions that meet the small requirements are provided.
According to such a polishing composition, the flatness of the substrate can be improved.

In one aspect, when the dynamic surface tension of the polishing composition on the polishing pad is Tp, the dynamic surface tension of the polishing object is Tw, and the dynamic surface tension of the polishing object holder is Tc, the Tc A polishing composition that satisfies the highest value is provided.
According to such a polishing composition, the flatness of the substrate can be improved.

The polishing composition according to one embodiment contains a water-soluble polymer and a salt. As a result, the effect of improving the flatness of the substrate can be better exerted.

In a preferred embodiment of the technique disclosed herein, the polishing composition is used to polish a silicon wafer (typically a silicon single crystal wafer). The polishing composition disclosed herein is preferably used, for example, for polishing a silicon wafer that has undergone wrapping. Among them, it is particularly preferably used for double-sided polishing of silicon wafers.

The perspective view which shows the single-sided polishing apparatus by one Embodiment of this invention. The perspective view which shows the double-sided polishing apparatus by one Embodiment of this invention.

Hereinafter, preferred embodiments of the present invention will be described. Matters other than those specifically mentioned in the present specification and necessary for carrying out the present invention can be grasped as design matters of those skilled in the art based on the prior art in the art. The present invention can be carried out based on the contents disclosed in the present specification and common general technical knowledge in the art.

<Familiarity of polishing composition>
The familiarity of the polishing composition to the member indicates the magnitude of the property that the polishing composition stays on the member without repelling. The method for evaluating the familiarity is not particularly limited as long as it can quantitatively evaluate the property that the polishing composition stays on the member without repelling, but for example, the contact angle, dynamic surface tension, roundness, and the like. It can be evaluated by the wet area and the like. The method for measuring the contact angle is not particularly limited, but the static contact angle observed when a droplet is dropped on the surface of a member installed horizontally with the ground, and the member on which the droplet is placed are tilted to slide the droplet. Examples thereof include a forward contact angle, which is a contact angle in the traveling direction of the droplet, and a receding contact angle, which is a contact angle in the direction opposite to the traveling direction of the droplet. The receding contact angle is preferable in that it well represents the familiarity of the member in actual dynamic polishing. The method for measuring the dynamic surface tension is not particularly limited, and examples thereof include the Wilhelmy method, the ring method, the pendant drop method, and the maximum foam pressure method. The Wilhelmy method is preferable in that it well represents the familiarity of the member in actual dynamic polishing.

The flatness of the substrate means that the polishing composition efficiently stays on the outer peripheral portion of the polishing object, which is the boundary between the polishing object holder and the polishing object, by the polishing composition satisfying the maximum value of Wc. Is considered to be the cause of improvement.

The larger the value of the receding contact angle, the smaller the familiarity with the member, and the smaller the value, the greater the familiarity with the member. That is, the smallest value of Cc indicates that the polishing composition has the highest compatibility with the object holder for polishing. Therefore, it is considered that the polishing composition efficiently stays on the outer peripheral portion of the polishing object, which is the boundary between the polishing object holder and the polishing object, and the flatness is improved.

The larger the value of the dynamic surface tension, the greater the familiarity with the member, and the smaller the value, the smaller the familiarity with the member. That is, the largest value of Tc indicates that the polishing composition has the highest compatibility with the object holder for polishing. Therefore, it is considered that the polishing composition efficiently stays on the outer peripheral portion of the polishing object, which is the boundary between the polishing object holder and the polishing object, and the flatness is improved.

The values of Wp, Wc, Ww, Cc, Cp, Cw, Tp, Tc, and Tw, which are indexes indicating the familiarity of the polishing composition, are the components of the polishing composition, the material and roughness of the polishing pad, and the polishing, respectively. The composition of the object and the material and roughness of the holder of the object to be polished can be controlled by selecting an appropriate combination. As a component in the polishing composition, the content of a water-soluble polymer or the like is often affected.

Regarding the receding contact angle, the receding contact angle Cp with respect to the polishing pad is preferably 90 ° or less, more preferably 80 ° or less, and further preferably 70 ° or less. Further, although not particularly limited, Cp is preferably 1 ° or more, more preferably 5 ° or more, and further preferably 10 ° or more. When Cp is within the above range, the flatness of the substrate is further improved. The receding contact angle Cp with respect to the polishing pad can be controlled by appropriately selecting a combination of the components of the polishing composition and the material of the polishing pad.

The receding contact angle Cw with respect to the object to be polished is preferably 90 ° or less, more preferably 80 ° or less, and even more preferably 70 ° or less. Further, although not particularly limited, Cw is preferably 1 ° or more, more preferably 5 ° or more, and further preferably 10 ° or more. When Cw is within the above range, the flatness of the substrate is further improved. The receding contact angle Cw with respect to the object to be polished can be controlled by appropriately selecting a combination of the components of the polishing composition and the material of the polishing pad.

The receding contact angle Cc with respect to the object holder to be polished is preferably 70 ° or less, more preferably 60 ° or less, and further preferably 50 ° or less. Further, although not particularly limited, Cc is preferably 1 ° or more, more preferably 5 ° or more, and further preferably 10 ° or more. When Cw is within the above range, the flatness of the substrate is further improved. The receding contact angle Cc with respect to the polishing holder can be controlled by appropriately selecting a combination of the components of the polishing composition and the material of the polishing pad.

The receding contact angle Cp of the polishing composition with respect to the polishing pad can be measured, for example, based on the following procedure.
(1P) A new polishing pad is installed on the dynamic contact angle measuring device DM-501 manufactured by Kyowa Interface Science Co., Ltd.
(2P) 30 μL of the polishing composition is dropped onto the polishing pad.
(3P) The polishing composition is dropped and the polishing pad is tilted at a speed of 1 ° / sec, and the receding contact angle after 10 seconds is measured.

The receding contact angle Cw of the polishing composition with respect to the object to be polished can be measured based on, for example, the following procedure.
(1W) The object to be polished, which has been mirrored and the natural oxide film has been removed in advance, is installed on the dynamic contact angle measuring device DM-501 manufactured by Kyowa Interface Science Co., Ltd.
(2W) 30 μL of the polishing composition is dropped onto the object to be polished.
(3W) The polishing composition is dropped and the object to be polished is tilted at a speed of 1 ° / sec, and the receding contact angle after 10 seconds is measured.

Cc can measure the receding contact angle of the polishing composition with respect to the object holder to be polished, for example, based on the following procedure.
(1C) A new polishing object holder is installed on the dynamic contact angle measuring device DM-501 manufactured by Kyowa Interface Science Co., Ltd.
(2C) 30 μL of the polishing composition is dropped onto the polishing object holder.
(3C) The polishing composition is dropped and the polishing object holder is tilted at a speed of 1 ° / sec, and the receding contact angle after 10 seconds is measured.

The dynamic surface tension Tp with respect to the polishing pad is preferably 0.1 mN or more, more preferably 0.5 mN or more, and further preferably 1.0 mN or more. Further, although not particularly limited, Tp is preferably 10.0 mN or less, more preferably 5.0 mN or less, and further preferably 3.0 mN or less. When Tp is within the above range, the flatness of the substrate is further improved. The dynamic surface tension Tp with respect to the polishing pad can be controlled by appropriately selecting the combination of the composition of the polishing composition and the material of the polishing pad.

The dynamic surface tension Tw with respect to the object to be polished is preferably 0.5 mN or more, more preferably 1.0 mN or more, and further preferably 2.0 mN or more. Further, although not particularly limited, Tw is preferably 10.0 mN or less, more preferably 6.0 mN or less, and further preferably 4.0 mN or less. When Tw is within the above range, the flatness of the substrate is further improved. The dynamic surface tension Tw with respect to the object to be polished can be controlled by appropriately selecting a combination of the composition of the polishing composition and the material of the polishing pad.

The dynamic surface tension Tc with respect to the holder to be polished is preferably 0.5 mN or more, more preferably 1.0 mN or more, and further preferably 2.0 mN or more. Further, although not particularly limited, Tc is preferably 10.0 mN or less, more preferably 7.0 mN or less, and further preferably 5.0 mN or less. When Tw is within the above range, the flatness of the substrate is further improved. The dynamic surface tension Tc of the holder to be polished can be controlled by appropriately selecting a combination of the composition of the polishing composition and the material of the polishing pad.

The polishing composition disclosed herein preferably has a Tc to Tw ratio of Tc / Tw of 1.01 or more, more preferably 1.03 or more, and further preferably 1.05 or more. preferable. Further, although not particularly limited, Tc / Tw is preferably 5.0 or less, more preferably 4.0 or less, and even more preferably 3.0 or less. When Tc / Tw is within the above range, the flatness of the substrate is further improved.

The dynamic surface tension Tp of the polishing composition with respect to the polishing pad can be measured, for example, based on the following procedure.
(1p) Cut a new polishing pad into a size of 25 mm × 40 mm.
(2p) The polishing pad is taken out and immersed in the polishing composition for 1 minute.
(3p) The polishing pad is taken out and immersed in a container containing ion-exchanged water for 1 second.
(4p) Take out the polishing pad and blow air with an air gun or the like until the excess water is blown off.
(5p) The polishing pad is installed in a dynamic wettability tester 6200TN manufactured by Reska Co., Ltd.
(6p) The polishing pad is immersed in a polishing composition previously installed in a dynamic wettability tester at a speed of 0.2 mm / sec for 10 mm and held for 2 seconds.
(7p) The polishing pad is pulled up at a speed of 0.2 mm / sec.
(8p) The forward wetting stress by the above test is measured.

The dynamic surface tension Tw of the polishing composition with respect to the object to be polished can be measured, for example, based on the following procedure.
(1w) Cut a new object to be polished into a size of 25 mm × 40 mm.
(2w) The object to be polished is immersed in a chemical solution of ammonia: hydrogen peroxide: ion-exchanged water = 1: 1:30 (volume ratio) for 60 seconds.
(3w) The object to be polished is taken out, and the object to be polished is immersed in 5% hydrofluoric acid for 60 seconds.
(4w) The object to be polished is taken out and immersed in the polishing composition for 1 minute.
(5w) The object to be polished is taken out and immersed in a container containing ion-exchanged water for 1 second.
(6w) Take out the object to be polished and blow air with an air gun or the like until the excess water is blown off.
(7w) The object to be polished is installed in a dynamic wettability tester 6200TN manufactured by Reska Co., Ltd.
(8w) The object to be polished is immersed in a polishing composition previously installed in a dynamic wettability tester at a speed of 0.2 mm / sec for 10 mm and held for 2 seconds.
(9w) The object to be polished is pulled up at a speed of 0.2 mm / sec.
(10w) The forward wetting stress by the above test is measured.

The dynamic surface tension Tc of the polishing composition with respect to the object holder to be polished can be measured, for example, based on the following procedure.
(1c) Cut a new object holder for polishing into a size of 25 mm × 40 mm.
(2c) The object holder to be polished is immersed in a chemical solution of ammonia: hydrogen peroxide: ion-exchanged water = 1: 1:30 (volume ratio) for 60 seconds.
(3c) The polishing object holder is taken out, and the polishing object is immersed in 5% hydrofluoric acid for 60 seconds.
(4c) The object holder for polishing is taken out and immersed in the polishing composition for 1 minute.
(5c) The object holder for polishing is taken out and immersed in a container containing ion-exchanged water for 1 second.
(6c) Take out the above-mentioned object holder for polishing, and blow air with an air gun or the like until the excess water is blown off.
(7c) The above-mentioned object holder for polishing object is installed in a dynamic wettability tester 6200TN manufactured by Reska Co., Ltd.
(8c) The object-bearing tool to be polished is immersed in a polishing composition previously installed in a dynamic wettability tester at a speed of 0.2 mm / sec for 10 mm and held for 2 seconds.
(9c) The object holder for polishing is pulled up at a speed of 0.2 mm / sec.
(10c) The forward wetting stress by the above test is measured.

<Abrasive grains>
Abrasive grains can be contained in the polishing composition disclosed herein. The material and properties of the abrasive grains are not particularly limited, and can be appropriately selected according to the purpose of use, the mode of use, and the like. Examples of abrasive grains include inorganic particles, organic particles, and organic-inorganic composite particles. Specific examples of the inorganic particles include oxide particles (for example, silica particles, alumina particles, cerium oxide particles, chromium oxide particles, titanium dioxide particles, zirconium oxide particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, and red iron oxide particles). , Nitride particles (eg silicon nitride particles, boron nitride particles), carbide particles (eg silicon carbide particles, boron carbide particles), diamond particles, carbonates (eg calcium carbonate, barium carbonate) and the like. Specific examples of the organic particles include polymethylmethacrylate (PMMA) particles and poly (meth) acrylic acid particles (here, (meth) acrylic acid means to comprehensively refer to acrylic acid and methacrylic acid). , Polyacrylonitrile particles and the like. One type of such abrasive grains may be used alone, or two or more types may be used in combination.

As the abrasive grains, inorganic particles are preferable, and particles made of a metal or semimetal oxide are particularly preferable. Suitable examples of abrasive grains that can be used in the techniques disclosed herein include silica particles. For example, when the technique disclosed herein is applied to a polishing composition that can be used for polishing a silicon wafer, it is particularly preferable to use silica particles as abrasive grains. The reason is that when the object to be polished is a silicon wafer, if silica particles consisting of the same element and oxygen atom as the object to be polished are used as abrasive grains, a metal or semi-metal residue different from silicon is generated after polishing. This is because there is no risk of contamination of the surface of the silicon wafer or deterioration of the electrical characteristics of the silicon wafer due to diffusion of a metal or semi-metal different from silicon inside the object to be polished. Further, since the hardness of silicon and silica are close to each other, there is an advantage that the polishing process can be performed without excessively damaging the surface of the silicon wafer. From this point of view, as one form of a preferable polishing composition, a polishing composition containing only silica particles as abrasive grains is exemplified. In addition, silica has the property that high-purity silica can be easily obtained. This is also one of the reasons why silica particles are preferable as abrasive particles. Specific examples of the silica particles include colloidal silica, fumed silica, precipitated silica and the like. Colloidal silica and fumed silica are preferable silica particles from the viewpoint that scratches are less likely to occur on the surface of the object to be polished and a surface having a lower haze can be realized. Of these, colloidal silica is preferable.

The true specific gravity of the silica constituting the silica particles is typically 1.5 or more, usually 1.6 or more, preferably 1.7 or more, more preferably 1.8 or more, and 1. 9 or more is more preferable, and 2.0 or more is particularly preferable. By increasing the density of silica, the polishing rate can be improved when polishing an object to be polished (for example, a silicon wafer). From the viewpoint of reducing scratches generated on the surface of the object to be polished (the surface to be polished), silica particles having the above density of 2.3 or less, for example, 2.2 or less are preferable. As the density of abrasive grains (typically silica), a measured value by a liquid replacement method using ethanol as a replacement liquid can be adopted.

In the technique disclosed herein, the abrasive grains contained in the polishing composition may be in the form of primary particles or in the form of secondary particles in which a plurality of primary particles are aggregated. Further, the abrasive grains in the form of primary particles and the abrasive grains in the form of secondary particles may be mixed. In a preferred embodiment, at least some abrasive grains are included in the polishing composition in the form of secondary particles.

The average primary particle size of the abrasive grains is not particularly limited, but from the viewpoint of polishing efficiency and the like, it is preferably 20 nm or more, more preferably 30 nm or more, and further preferably 40 nm or more. Further, from the viewpoint that a surface having higher smoothness can be easily obtained, the average primary particle diameter of the abrasive grains is preferably 150 nm or less, more preferably 100 nm or less, and further preferably 80 nm or less.

In the technique disclosed herein, the average primary particle diameter of the abrasive grains is calculated by, for example, the formula of average primary particle diameter (nm) = 2727 / S from the specific surface area S (m ² / g) measured by the BET method. can do. The specific surface area of the abrasive grains can be measured, for example, by using a surface area measuring device manufactured by Micromeritex Co., Ltd., trade name "FlowSorb II 2300".

The average secondary particle diameter of the abrasive grains is not particularly limited, but is preferably 30 nm or more, more preferably 40 nm or more, and further preferably 50 nm or more from the viewpoint of polishing rate and the like. Further, from the viewpoint of obtaining a surface with higher smoothness, the average secondary particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 200 nm or less, still more preferably 150 nm or less.

In the technique disclosed herein, the average secondary particle size of the abrasive grains is, for example, the volume average particle size (volume-based arithmetic) by a dynamic light scattering method using the model "UPA-UT151" manufactured by Nikkiso Co., Ltd. It can be measured as an average diameter; Mv).

The average secondary particle size of the abrasive grains is generally equal to or greater than the average primary particle size of the abrasive grains, and is typically larger than the average primary particle size. Although not particularly limited, the average secondary particle size of the abrasive grains is preferably 1.2 times or more and 3.0 times or less of the average temporary particle size, from the viewpoint of polishing effect and surface smoothness after polishing. It is preferably 1.5 times or more and 2.5 times or less, more preferably 1.7 times or more and 2.3 times or less, and further preferably 1.9 times or more and 2.2 times or less.

The shape (outer shape) of the abrasive grains may be spherical or non-spherical. Specific examples of the non-spherical abrasive grains include a peanut shape (that is, a peanut shell shape), a cocoon shape, a protruding shape, a konpeito shape, a rugby ball shape, and the like. As the abrasive grains, one type having the same shape may be used alone, or two or more types having different shapes may be used in combination. For example, many abrasive grains in the shape of konpeito can be preferably adopted.

Although not particularly limited, the average value (average aspect ratio) of the major axis / minor axis ratio of the primary particles of the abrasive grains is preferably 1.05 or more, and more preferably 1.1 or more. Higher polishing rates can be achieved by increasing the average aspect ratio of the abrasive grains. The average aspect ratio of the abrasive grains is preferably 3.0 or less, more preferably 2.0 or less, still more preferably 1.5 or less, from the viewpoint of scratch reduction and the like.

The shape (outer shape) and average aspect ratio of the abrasive grains can be grasped by, for example, observing with an electron microscope. As a specific procedure for grasping the average aspect ratio, for example, for a predetermined number (for example, 200) of abrasive particles that can recognize the shape of independent particles using a scanning electron microscope (SEM), each particle is used. Draw the smallest rectangle circumscribing the image. Then, for the rectangle drawn for each particle image, the value obtained by dividing the length of the long side (value of the major axis) by the length of the short side (value of the minor axis) is the major axis / minor axis ratio (aspect ratio). ). The average aspect ratio can be obtained by arithmetically averaging the aspect ratios of the predetermined number of particles.

The amount of abrasive grains contained in the polishing composition is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, still more preferably 0.1% by weight or more. A higher polishing rate can be achieved by increasing the amount of abrasive grains. The amount of abrasive grains contained in the polishing composition is preferably 20% by weight or less, more preferably 10% by weight or less, still more preferably 5% by weight, from the viewpoint of dispersion stability of the polishing composition. Hereinafter, it is more preferably 2% by weight or less.

<Water-soluble polymer>
The polishing composition disclosed herein may contain a water-soluble polymer. The water-soluble polymer has a great effect of improving the flatness of the substrate by changing the contact angle by adsorbing it on the interface of each member.

Examples of the water-soluble polymer include cellulose derivatives, starch derivatives, polymers containing oxyalkylene units, polymers containing nitrogen atoms, vinyl alcohol-based polymers, and the like.

Examples of cellulose derivatives include hydroxymethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, carboxymethyl cellulose and the like. Among these, hydroxyethyl cellulose can be preferably adopted.

Examples of starch derivatives include pullulan, hydroxypropyl starch and the like.

Examples of polymers containing oxyalkylene units include polyethylene glycol, polyethylene oxide, polypropylene oxide, random copolymers of ethylene oxide and propylene oxide, block copolymers, and the like.

Examples of polymers containing a nitrogen atom include pyrrolidone-based polymers such as polyvinylpyrrolidone, polyacryloyl morpholine, polyacrylamide and the like. Among these, polyvinylpyrrolidone can be preferably adopted.

Examples of vinyl alcohol-based polymers include polyvinyl alcohol, cation-modified polyvinyl alcohol, anion-modified polyvinyl alcohol and the like. Among these, polyvinyl alcohol can be preferably adopted.

Examples of other water-soluble polymers include polyisoprene sulfonic acid, polyvinyl sulfonic acid, polyallyl sulfonic acid, polyisoamylene sulfonic acid, polystyrene sulfonate, polyacrylic acid salt, polyvinyl acetate and the like.

The water-soluble polymer may be used alone or in combination of two or more. Further, a homopolymer may be used, or a copolymer may be used.

The amount of the water-soluble polymer contained in the polishing composition is preferably 0.000001% by weight or more, more preferably 0.00001% by weight or more, and further preferably 0.0001% by weight or more. By increasing the water-soluble high molecular weight, a flatter substrate can be obtained. Further, the amount of the water-soluble polymer contained in the polishing composition is preferably 0.01% by weight or less, more preferably 0.001% by weight or less, still more preferably 0, from the viewpoint of improving the polishing rate. It is 0005% by weight or less.

<Salt>
The polishing composition disclosed herein may contain a salt. As the salt, either an organic acid salt or an inorganic acid salt can be used. The salt may be used alone or in combination of two or more.

The anionic components constituting the salt include carbonate ion, hydrogen carbonate ion, borate ion, phosphate ion, phenol ion, and monocarboxylic acid ion (for example, formate ion, acetate ion, propionate ion, 2-hydroxybutyrate ion, apple). Acid ion), dicarboxylic acid ion (eg oxalate ion, maleate ion, malonate ion, tartrate ion, succinate ion) and tricarboxylic acid ion (eg citrate ion), organic sulfonic acid ion, organic phosphonate ion, etc. Can be mentioned. Examples of cation components constituting the salt include alkali metal ions (for example, potassium ion and sodium ion), alkaline earth metal ions (for example, calcium ion and magnesium ion), and transition metal ions (for example, manganese ion and cobalt ion). Zinc ion), ammonium ion (for example, tetraalkylammonium ion), phosphonium ion (for example, tetraalkylphosphonium ion) and the like. Specific examples of the salt include sodium carbonate, potassium carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, sodium acetate, potassium acetate, sodium propionate, potassium propionate, calcium carbonate, calcium hydrogen carbonate, calcium acetate, calcium propionate, acetic acid. Examples thereof include magnesium, magnesium propionate, zinc propionate, manganese acetate, and cobalt acetate. Among these, potassium carbonate can be preferably adopted.

The amount of salt contained in the polishing composition is preferably 0.001% by weight or more, more preferably 0.005% by weight or more, still more preferably 0.01% by weight or more. Increasing the amount of salt can improve the performance sustainability of the polishing composition over and over again. The amount of salt contained in the polishing composition is preferably 0.5% by weight or less, more preferably 0.1% by weight or less, still more preferably, from the viewpoint of improving the storage stability of the polishing composition. Is 0.05% by weight or less.

<Basic composition>
The polishing composition disclosed herein may contain a basic compound. The basic composition is a component that functions to chemically polish the object to be polished and contributes to the improvement of the polishing rate. Further, the basic compound also has an effect of changing the contact angle by adsorbing to the interface of each member, like the above-mentioned water-soluble polymer. The basic compound may be an organic basic compound or an inorganic basic compound. As the basic compound, one kind may be used alone or two or more kinds may be used in combination.

Examples of organic basic compounds include quaternary ammonium salts such as tetraalkylammonium salts. Anions in the salt, for ^{example, OH -, F -, Cl} -, Br -, I -, ClO 4 -, BH 4 - may be like. For example, quaternary ammonium salts such as choline, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide can be preferably used. Of these, tetramethylammonium hydroxide is preferable.

Other examples of organic basic compounds include quaternary phosphonium salts such as tetraalkylphosphonium salts. The anion in the phosphonium salt can be, for example, OH ⁻ , F ⁻ , Cl ⁻ , Br ⁻ , I ⁻ , ClO ₄ ⁻ , BH ₄ ^{− and the} like. For example, halides and hydroxides such as tetramethylphosphonium, tetraethylphosphonium, tetrapropylphosphonium, and tetrabutylphosphonium can be preferably used.

Other examples of organic basic compounds include amines (eg, methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- (β-aminoethyl) ethanolamine, hexamethylenediamine, etc. Diethylenetriamine, triethylenetetramine), piperazins (eg piperazine, 1- (2-aminoethyl) piperazine, N-methylpiperazin), azoles (eg imidazole, triazole), diazabicycloalkans (eg 1,4-diazabicyclo) [2.2.2] Octane, 1,8-diazabicyclo [5.4.0] Undec-7-ene, 1,5-diazabicyclo [4.3.0] -5-nonen), and other cyclic amines (For example, piperidine, aminopyridine), guanidine and the like can be mentioned.

Examples of inorganic basic compounds include ammonia, alkali metal or alkaline earth metal hydroxides (eg potassium hydroxide, sodium hydroxide).

The amount of the basic compound contained in the polishing composition is preferably 0.005% by weight or more, more preferably 0.01% by weight or more, still more preferably 0.03% by weight or more. Higher polishing rates can be achieved by increasing the amount of basic compounds. The amount of the basic compound contained in the polishing composition is preferably 1.0% by weight or less, more preferably 0.5% by weight or less, still more preferably 0, from the viewpoint of improving the flatness of the substrate. .3% by weight or less, more preferably 0.15% by weight or less.

<Water>
As the water constituting the polishing composition disclosed herein, ion-exchanged water (deionized water), pure water, ultrapure water, distilled water and the like can be preferably used. The water used preferably has, for example, a total content of transition metal ions of 100 ppb or less in order to avoid hindering the action of other components contained in the polishing composition as much as possible. For example, the purity of water can be increased by operations such as removal of impurity ions by an ion exchange resin, removal of foreign substances by a filter, and distillation.
The polishing composition disclosed herein may further contain an organic solvent (lower alcohol, lower ketone, etc.) that can be uniformly mixed with water, if necessary. Usually, 90% by volume or more of the solvent contained in the polishing composition is preferably water, and 95% by volume or more (typically 99 to 100% by volume) is more preferably water.

<Chelating agent>
The polishing composition disclosed herein may contain a chelating agent as an optional component. The chelating agent forms and traps complex ions with metal impurities that can be contained in the polishing composition, thereby suppressing contamination of the polishing object by the metal impurities. The chelating agent may be used alone or in combination of two or more.

Examples of chelating agents include aminocarboxylic acid-based chelating agents and organic phosphonic acid-based chelating agents. Examples of aminocarboxylic acid-based chelating agents include ethylenediaminetetraacetic acid, sodium ethylenediaminetetraacetic acid, nitrilotriacetic acid, sodium nitrilotriacetate, ammonium nitrilotriacetic acid, hydroxyethylethylenediaminetriacetic acid, sodium hydroxyethylethylenediaminetriacetic acid, and diethylenetriaminepentaacetic acid. , Sodium diethylenetriaminepentaacetate, triethylenetetraminehexacetic acid and sodium triethylenetetraminehexacetate. Examples of organic phosphonic acid-based chelating agents include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrax (methylenephosphonic acid), and diethylenetriaminepenta (methylenephosphone). Acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid , Etan-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid and α-methylphospho Contains succinic acid. Of these, organic phosphonic acid-based chelating agents are more preferable, and among them, aminotri (methylenephosphonic acid), ethylenediaminetetrax (methylenephosphonic acid) and diethylenetriaminepenta (methylenephosphonic acid) are mentioned.

The amount of chelate contained in the polishing composition is preferably 0.0001% by weight or more, more preferably 0.0005% by weight or more, still more preferably 0.001% by weight or more. Increasing the amount of chelating agent can reduce metal contamination of the substrate. The amount of chelate contained in the polishing composition is preferably 0.1% by weight or less, more preferably 0.01% by weight or less, still more preferably, from the viewpoint of improving the storage stability of the polishing composition. Is 0.005% by weight or less.

<Other ingredients>
The polishing compositions disclosed herein are polishing compositions (typically) such as surfactants, organic acids, inorganic acids, preservatives, fungicides, etc., to the extent that the effects of the present invention are not significantly impaired. May further contain a known additive that can be used in the polishing composition used in the polishing step of a silicon wafer), if necessary.

The polishing compositions disclosed herein, as an optional component, (typically, molecular weight 1 × 10 water-soluble organic compounds of less than ⁴⁾ a surfactant may be contained. The use of a surfactant can improve the dispersion stability of the polishing composition. Further, the surfactant has an effect of changing the contact angle by adsorbing to the interface of each member, like the above-mentioned water-soluble polymer and basic compound. The surfactant may be used alone or in combination of two or more.

As the surfactant, anionic or nonionic surfactants can be preferably adopted. Nonionic surfactants are more preferable from the viewpoint of low foaming property and ease of pH adjustment. Examples of nonionic surfactants include oxyalkylene polymers (eg polyethylene glycol, polypropylene glycol, polytetramethylene glycol, etc.), polyoxyalkylene adducts (eg polyoxyethylene alkyl ethers, polyoxyethylene alkyl phenyl ethers, polyoxy). Ethylene alkylamine, polyoxyethylene fatty acid ester, polyoxyethylene glyceryl ether fatty acid ester, polyoxyethylene sorbitan fatty acid ester), copolymer of multiple types of oxyalkylene (diblock type, triblock type, random type, alternating type) And so on.

The amount of the surfactant contained in the polishing composition is preferably 0.5% by weight or less, more preferably 0.2% by weight or less, still more preferably 0.1% by weight or less. The polishing composition disclosed herein can also be preferably carried out in an embodiment that is substantially free of surfactants.

The polishing composition disclosed herein preferably contains substantially no oxidizing agent. When an oxidizing agent is contained in the polishing composition, the composition is supplied to the polishing object (for example, a silicon wafer), and the surface of the polishing object is oxidized to form an oxide film, which causes an oxide film. This is because the polishing rate may decrease. Specific examples of the oxidizing agent referred to here include hydrogen peroxide (H ₂ O ₂ ), potassium permanganate, sodium persulfate, ammonium persulfate, sodium dichloroisocyanurate and the like. The fact that the polishing composition does not substantially contain an oxidizing agent means that the polishing composition does not contain an oxidizing agent at least intentionally. Therefore, a trace amount (for example, the molar concentration of the oxidizing agent in the polishing composition is 0.0005 mol / L or less, preferably 0.0001 mol / L or less, more preferably 0.00001) derived from the raw material, the manufacturing method, or the like. A polishing composition inevitably containing an oxidizing agent of mol / L or less, particularly preferably 0.000001 mol / L or less) is a concept of a polishing composition that does not substantially contain an oxidizing agent. Can be included in.

<Abrasive liquid>
The polishing composition disclosed herein is typically supplied to an object to be polished in the form of a polishing solution containing the composition for polishing, and is used for polishing the object to be polished. The polishing liquid may be prepared, for example, by diluting (typically diluting with water) any of the polishing compositions disclosed herein. Alternatively, the polishing composition may be used as it is as a polishing liquid. That is, in the concept of the polishing composition in the technique disclosed herein, a polishing liquid (working slurry) supplied to the polishing object and used for polishing the polishing object is diluted and used as the polishing liquid. Both with a concentrate (stock solution of polishing liquid) are included. As another example of the polishing liquid containing the polishing composition disclosed herein, there is a polishing liquid obtained by adjusting the pH of the composition.

The pH of the polishing liquid is preferably 8.0 or more, more preferably 9.0 or more, still more preferably 9.5 or more, still more preferably 10.0 or more. The higher the pH of the polishing liquid, the higher the polishing rate tends to be. The pH is preferably 12.0 or less, more preferably 11.5 or less, still more preferably 11.0 or less, from the viewpoint of the stability of the abrasive grains in the polishing liquid. The above pH can be preferably applied to a polishing liquid used for polishing a silicon wafer. For the pH of the polishing solution, use a pH meter (for example, a glass electrode type hydrogen ion concentration indicator (model number F-23) manufactured by Horiba Seisakusho) and use a standard buffer solution (phthalate pH buffer solution pH: 4.01). 25 ° C.), Neutral phosphate pH buffer pH: 6.86 (25 ° C.), Carbonate pH buffer pH: 10.01 (25 ° C.)) After three-point calibration, the glass electrode was calibrated. It can be grasped by putting it in a polishing solution and measuring the value after it has stabilized after 2 minutes or more.

<Concentrate>
The polishing composition disclosed herein may be in a concentrated form (that is, in the form of a concentrated solution of a polishing solution) before being supplied to the object to be polished. The polishing composition in such a concentrated form is advantageous from the viewpoint of convenience and cost reduction in production, distribution, storage and the like. The concentration ratio can be, for example, about 2 to 100 times in terms of volume, and usually about 5 to 50 times is appropriate. The concentration ratio of the polishing composition according to a preferred embodiment is 10 to 40 times.

The polishing composition in the form of a concentrated solution can be used in an embodiment in which a polishing solution is prepared by diluting it at a desired timing and the polishing solution is supplied to the object to be polished. The dilution can be typically carried out by adding the above-mentioned aqueous solvent to the above-mentioned concentrate and mixing them. When the aqueous solvent is a mixed solvent, only some of the constituents of the aqueous solvent may be added and diluted, and the mixture contains those constituents in an amount ratio different from that of the aqueous solvent. It may be diluted by adding a solvent. Further, as will be described later, in a multi-dosage type polishing composition, a polishing solution may be prepared by diluting some of them and then mixing them with other agents, or a plurality of agents are mixed. The mixture may later be diluted to prepare a polishing solution.

The content of abrasive grains in the concentrated solution is preferably 50% by weight or less, more preferably 45% by weight or less, from the viewpoint of stability of the polishing composition (for example, dispersion stability of abrasive grains) and filterability. , More preferably 40% by weight or less. Further, from the viewpoint of convenience and cost reduction in manufacturing, distribution, storage, etc., the content of abrasive grains is preferably 1% by weight or more, more preferably 5% by weight or more, still more preferably 10% by weight or more. , More preferably 15% by weight or more.

The polishing composition disclosed herein may be a one-dosage form or a multi-dosage form including a two-dosage form. For example, a solution A containing a part of the constituent components (typically a component other than an aqueous solvent) of the polishing composition and a solution B containing the remaining components are mixed to form an object to be polished. It may be configured to be used for polishing.

<Preparation of polishing composition>
The method for producing the polishing composition disclosed herein is not particularly limited. For example, it is preferable to mix each component contained in the polishing composition using a well-known mixing device such as a blade type stirrer, an ultrasonic disperser, and a homomixer. The mode in which these components are mixed is not particularly limited, and for example, all the components may be mixed at once, or may be mixed in an appropriately set order.

<Use>
The polishing composition disclosed herein can be applied to the polishing of objects to be polished having various materials and shapes. The material of the object to be polished is, for example, metal or semi-metal, or an alloy thereof (for example, silicon, aluminum, nickel, tungsten, copper, tantalum, titanium, stainless steel, germanium), a vitreous substance (for example, quartz glass, aluminosilicate). Glass, glassy carbon), ceramic materials (eg alumina, silica, sapphire, silicon nitride, tantalum nitride, titanium carbide), compound semiconductor substrate materials (eg silicon carbide, gallium nitride, gallium arsenide, etc.), resin materials (eg polyimide Resin) etc. Of these, the object to be polished may be made of a plurality of materials. Among them, it is suitable for polishing an object to be polished (for example, a silicon material such as a silicon single crystal wafer) having a surface made of silicon. The techniques disclosed herein may be particularly preferably applied to a polishing composition that typically contains only silica particles as abrasive grains and the object to be polished is a silicon material.
The shape of the object to be polished is not particularly limited. The polishing composition disclosed herein can be preferably applied to polishing an object to be polished having a flat surface such as a plate shape or a polyhedron, or an end portion of the object to be polished (for example, polishing a wafer edge).

<Polishing device>
Subsequently, the polishing apparatus will be described. FIG. 1 is a perspective view showing a single-sided polishing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the single-sided polishing apparatus 11 includes a disk-shaped rotary surface plate 12 to which a polishing pad 14 is attached on the upper surface. The rotary surface plate 12 is provided so as to be integrally rotatable with respect to the first shaft 13 that rotates in the direction of the arrow 13a in FIG. At least one polishing object holder 15 is provided above the rotary surface plate 12. The object holder 15 to be polished is provided so as to be integrally rotatable with respect to the second shaft 16 rotating in the direction of the arrow 16a in FIG. A polishing object holding plate 19 having a polishing object holding hole 18 is detachably attached to the bottom surface of the polishing object holder 15 via a ceramic plate 17 and a urethane sheet (not shown). The single-sided polishing apparatus 11 may further include a polishing composition feeder 21 and a rinse composition feeder (not shown). The polishing composition feeder 21 may discharge the polishing liquid through the nozzle 21a, and the rinsing composition feeder 21 may discharge the rinsing composition through a nozzle (not shown). In that case, the rinsing composition feeder is arranged above the rotary surface plate 12 instead of the polishing composition feeder 21. After switching the operating conditions of the single-sided polishing apparatus 11 from the setting for polishing to the setting for rinsing, the rinsing composition is discharged from the rinsing composition feeder and the rinsing composition is supplied onto the polishing pad 14. .. As a result, the surface of the object to be polished in contact with the polishing pad 14 is rinsed. The rinse composition may be discharged through the nozzle 21a of the polishing composition feeder 21.

When polishing the object to be polished, the polishing composition feeder 21 is arranged above the rotary surface plate 12 as shown in FIG. The object to be polished is sucked into the object holding hole 18 and held in the object holder 15. First, the rotation of the object holder 15 to be polished and the rotary surface plate 12 is started, and the polishing liquid or, in some cases, the rinsing composition is discharged from the polishing composition feeder 21 and supplied onto the polishing pad 14. .. Then, the object to be polished holder 15 is moved toward the rotary surface plate 12 in order to press the object to be polished against the polishing pad 14. As a result, one side of the object to be polished in contact with the polishing pad 14 is polished or rinsed. The polishing pad is not particularly limited, and any of polyurethane type, non-woven fabric type, suede type, those containing abrasive grains, those containing no abrasive grains, and the like may be used.

Further, by providing another disk-shaped rotary surface plate to which a polishing pad is attached, the finish polishing apparatus shown in FIG. 1 can be used as a preliminary polishing apparatus for polishing both sides of an object to be polished. .. FIG. 2 is a perspective view showing a double-sided polishing apparatus according to an embodiment of the present invention.
As shown in FIG. 2, as one embodiment of the double-sided polishing apparatus, a disk-shaped rotary surface plate to which a polishing pad is attached is further provided on the upper portion, and an upper rotary surface plate to which the polishing pad 14 is attached is provided. The polishing object held in the polishing object holding hole 18 by the polishing pad 14 attached to the lower surface plate 23 and the polishing pad 14 attached to the upper surface plate 24 as a plate (upper surface plate 24). Hold in. In the upper rotary surface plate, the pre-polishing composition discharged from the polishing composition feeder 21 and the finish polishing composition (preferably the pre-polishing composition) (or, in some cases, the rinsing composition) are placed at the lower part. It has a flow hole (polishing composition supply gutter 26) for allowing it to flow out.
The upper rotating surface plate (upper surface plate 24) and the lower rotating surface plate (lower surface plate 23) rotate in opposite directions as shown by arrows 13a and 16a, and are used from the polishing composition feeder 21. Is a pre-polishing composition, a finish-polishing composition, or in some cases, a rinsing composition, and both polishing pads 14 rotate while pressing both sides of the polishing object, so that the polishing object is polished. Both sides are polished or rinsed.

As shown in FIG. 2, in the double-sided polishing apparatus 22, the polishing object holder 15 shown in FIG. 1 is unnecessary, but instead, the polishing object holding plate 19 having one polishing object holding hole 18 is used. When necessary, all of them are called a polishing object holder or a processing carrier 25. According to the form shown in FIG. 2, one holding plate contains one object to be polished and has three objects, but according to another form, one object to be polished is contained. In some cases, five holding plates are provided, or in one holding plate, three objects to be polished are contained. In the present invention, any device can be used, and the number of holding plates and the number of objects to be polished held by one holding plate are not particularly limited, and a conventionally known device can be used as it is or as appropriate. It can be improved and used.

In the present invention, the object holder for polishing refers to the object holding plate 19 for single-sided polishing equipment and the processing carrier 25 for double-sided polishing equipment.

<Polishing>
The polishing composition disclosed herein can be preferably used as a polishing composition for polishing a silicon material such as a silicon substrate (for example, a single crystal or polycrystalline silicon wafer, particularly a silicon single crystal wafer). Hereinafter, a preferred embodiment of a method of polishing an object to be polished using the polishing composition disclosed herein will be described.
That is, a polishing liquid containing any of the polishing compositions disclosed herein is prepared. The preparation of the polishing liquid may include preparing the polishing liquid by adding operations such as concentration adjustment (for example, dilution) and pH adjustment to the polishing composition. Alternatively, the above-mentioned polishing composition may be used as it is as a polishing liquid. Further, in the case of a multi-dosage type polishing composition, in order to prepare the above-mentioned polishing liquid, those agents are mixed, one or more agents are diluted before the mixing, and after the mixing. Diluting the mixture, etc. may be included.

Next, the polishing liquid is supplied to the object to be polished and polished by a conventional method. For example, when performing a primary polishing step (typically a double-sided polishing step) of a silicon substrate, the silicon substrate that has undergone the wrapping step is set in a general polishing device, and the silicon substrate is passed through the polishing pad of the polishing device. The polishing liquid is supplied to the surface to be polished. Typically, while continuously supplying the polishing liquid, the polishing pad is pressed against the surface to be polished of the silicon substrate to relatively move (for example, rotate) the two. After that, if necessary, a further secondary polishing step (typically, a single-sided polishing step) is performed, and finally final polishing is performed to complete polishing of the object to be polished.

The polishing composition disclosed herein may be used in a disposable manner (so-called “flowing”) once used for polishing, or may be circulated and used repeatedly. As an example of the method of circulating the polishing composition, there is a method of collecting the used polishing composition discharged from the polishing device in a tank and supplying the collected polishing composition to the polishing device again. .. When the polishing composition is recycled, the environmental load can be reduced by reducing the amount of the used polishing composition to be treated as a waste liquid, as compared with the case where the polishing composition is used by flowing. In addition, the cost can be suppressed by reducing the amount of the polishing composition used.
When the polishing composition disclosed herein is used in a circulating manner, a new component, a component decreased by use, or a component desirable to be increased is added to the polishing composition in use at an arbitrary timing. You may.

In a preferred embodiment, the substrate polishing step using the polishing composition is a polishing step upstream of final polishing. Among them, it can be preferably applied to the preliminary polishing of the substrate after the wrapping step. For example, a double-sided polishing step (typically, a primary polishing step performed using a double-sided polishing device) performed on a substrate that has undergone a wrapping step, or the first performed on a substrate that has undergone the double-sided polishing step. The polishing composition disclosed herein can be preferably used in a single-sided polishing step (typically the first secondary polishing step). Furthermore, the polishing composition disclosed herein can be more preferably used in the primary polishing step performed using the double-sided polishing apparatus.

<Example>
Hereinafter, some examples of the present invention will be described, but the present invention is not intended to be limited to those shown in the examples.

<Preparation of polishing composition>
The following polishing compositions A to E are adjusted, and in Example 1, the polishing composition A is adjusted, in Example 2, the polishing composition B is adjusted, and in Example 3 and Comparative Examples 1, 3 and 4, the polishing composition A is polished. Composition C was used, in Comparative Example 2, the polishing composition D was used, and in Comparative Example 5, the polishing composition E was used.
(Polishing Composition A)
Colloidal silica as abrasive grains (average primary particle size 35 nm, average secondary particle size 68 nm) was 0.29% by weight, tetramethylammonium hydroxide as a basic compound was 0.063% by weight, and the rest. The polishing composition of Example 2 was prepared by mixing with pure water. The pH of the polishing composition was 10.8.

(Polishing Composition B)
Coroidal silica as abrasive grains (average primary particle size 35 nm, average secondary particle size 68 nm) was 0.29% by weight, potassium carbonate as salt was 0.095% by weight, and hydroxide as a basic compound. The polishing composition of Example 2 was prepared by mixing 0.14% by weight of tetramethylammonium with the remaining pure water. The pH of the polishing composition was 10.7.

(Polishing Composition C)
Colloidal silica as abrasive grains (average primary particle size 51 nm, average secondary particle size 101 nm) was 1.17% by weight, and polyvinylpyrrolidone as a water-soluble polymer (weight average molecular weight 45,000) was 0.00024. %% by weight, 0.037% by weight of potassium carbonate as a salt, 0.057% by weight of tetramethylammonium hydroxide as a basic compound, 0.0043% by weight of potassium hydroxide, and the balance of pure water. Mixing was used to prepare the polishing composition of Example 1. The pH of the polishing composition was 10.5.

(Polishing Composition D)
Colloidal silica as abrasive grains (average primary particle size 35 nm, average secondary particle size 68 nm) was 0.29% by weight, and polyvinylpyrrolidone as a water-soluble polymer (weight average molecular weight 45,000) was 0.0014. Polishing of Example 2 by mixing 0.15% by weight of potassium carbonate as a salt, 0.14% by weight of tetramethylammonium hydroxide as a basic compound, and the remaining pure water. Composition was prepared. The pH of the polishing composition was 10.7.

(Polishing Composition E)
Colloidal silica as abrasive grains (average primary particle size 51 nm, average secondary particle size 101 nm) is 1.08% by weight, and polyvinylpyrrolidone as a water-soluble polymer (weight average molecular weight 45,000) is 0.00022. %% by weight, 0.033% by weight of potassium carbonate as a salt, 0.051% by weight of tetramethylammonium hydroxide as a basic compound, 0.0039% by weight of potassium hydroxide, and hydroxyethyl cellulose (weight average molecular weight). 12000000) was mixed with 0.01% by weight and the remaining pure water to prepare the polishing composition of Example 5. The pH of the polishing composition was 10.5.

<Polishing pad>
As the polishing pad, MH-S15A manufactured by Nitta Haas Co., Ltd. was used in Examples 1, 2, 3 and Comparative Example 2, and SUBA800 manufactured by Nitta Haas Co., Ltd. was used in Comparative Examples 1, 3, 4, and 5. ..

<Holding object holder>
As the object holder to be polished, a SUS304 processing carrier was used in Examples 1, 2, 3 and Comparative Example 2, a glass epoxy processing carrier was used in Comparative Examples 1, 3 and 5, and speed was used in Comparative Example 4. A DLC (diamond-like carbon) coating carrier manufactured by Fam was used.

<Measurement of receding contact angle of polishing composition with respect to polishing pad>
The receding contact angle Cp of the polishing composition according to each example with respect to the polishing pad was measured based on the following procedure.
(1P) A new polishing pad is installed on the dynamic contact angle measuring device DM-501 manufactured by Kyowa Interface Science Co., Ltd.
(2P) 30 μL of the polishing composition is dropped onto the polishing pad.
(3P) The polishing composition is dropped and the polishing pad is tilted at a speed of 1 ° / sec, and the receding contact angle after 10 seconds is measured.
The results obtained are shown in Table 1.

<Measurement of receding contact angle of polishing composition with respect to polishing object>
The receding contact angle Cw of the polishing composition according to each example with respect to the object to be polished was measured based on the following procedure.
(1W) Kyowa Interface Science for polishing objects (300 mm silicon wafer, conduction type P type, crystal orientation <100>, resistivity of 0.1 Ω ・ cm or more and less than 100 Ω ・ cm) that have been mirror-surfaced and the natural oxide film removed in advance. Installed on the dynamic contact angle measuring device DM-501 manufactured by Co., Ltd.
(2W) 30 μL of the polishing composition is dropped onto the object to be polished.
(3W) The polishing composition is dropped and the object to be polished is tilted at a speed of 1 ° / sec, and the receding contact angle after 10 seconds is measured.
The results obtained are shown in Table 1.

<Measurement of receding contact angle of polishing composition with respect to object holder for polishing>
The receding contact angle of the polishing composition according to each example with respect to the object holder for polishing was measured by Cc based on the following procedure.
(1C) A new polishing object holder is installed on the dynamic contact angle measuring device DM-501 manufactured by Kyowa Interface Science Co., Ltd.
(2C) 30 μL of the polishing composition is dropped onto the polishing object holder.
(3C) The polishing composition is dropped and the polishing object holder is tilted at a speed of 1 ° / sec, and the receding contact angle after 10 seconds is measured.
The results obtained are shown in Table 1.

<Measurement of dynamic surface tension of polishing composition on polishing pad>
The dynamic surface tension Tp of the polishing composition according to each example with respect to the polishing pad was measured based on the following procedure.
(1p) Cut a new polishing pad into a size of 25 mm × 40 mm.
(2p) The polishing pad is taken out and immersed in the polishing composition for 1 minute.
(3p) The polishing pad is taken out and immersed in a container containing ion-exchanged water for 1 second.
(4p) Take out the polishing pad and blow air with an air gun or the like until the excess water is blown off.
(5p) The polishing pad is installed in a dynamic wettability tester 6200TN manufactured by Reska Co., Ltd.
(6p) The polishing pad is immersed in a polishing composition previously installed in a dynamic wettability tester at a speed of 0.2 mm / sec for 10 mm and held for 2 seconds.
(7p) The polishing pad is pulled up at a speed of 0.2 mm / sec.
(8p) The forward wetting stress by the above test is measured.
The results obtained are shown in Table 2.

<Measurement of dynamic surface tension of polishing composition for polishing object>
The dynamic surface tension Tw of the polishing composition according to each example with respect to the object to be polished was measured based on the following procedure.
(1w) Cut a new object to be polished into a size of 25 mm × 40 mm.
(2w) The object to be polished is immersed in a chemical solution of ammonia: hydrogen peroxide: ion-exchanged water = 1: 1:30 (volume ratio) for 60 seconds.
(3w) The object to be polished is taken out, and the object to be polished is immersed in 5% hydrofluoric acid for 60 seconds.
(4w) The object to be polished is taken out and immersed in the polishing composition for 1 minute.
(5w) The object to be polished is taken out and immersed in a container containing ion-exchanged water for 1 second.
(6w) Take out the object to be polished and blow air with an air gun or the like until the excess water is blown off.
(7w) The object to be polished is installed in a dynamic wettability tester 6200TN manufactured by Reska Co., Ltd.
(8w) The object to be polished is immersed in a polishing composition previously installed in a dynamic wettability tester at a speed of 0.2 mm / sec for 10 mm and held for 2 seconds.
(9w) The object to be polished is pulled up at a speed of 0.2 mm / sec.
(10w) The forward wetting stress by the above test is measured.
The results obtained are shown in Table 2.

<Measurement of dynamic surface tension of polishing composition with respect to object holder for polishing>
The dynamic surface tension Tc of the polishing composition according to each example with respect to the object holder for polishing was measured based on the following procedure.
(1c) Cut a new object holder for polishing into a size of 25 mm × 40 mm.
(2c) The object holder to be polished is immersed in a chemical solution of ammonia: hydrogen peroxide: ion-exchanged water = 1: 1:30 (volume ratio) for 60 seconds.
(3c) The polishing object holder is taken out, and the polishing object is immersed in 5% hydrofluoric acid for 60 seconds.
(4c) The object holder for polishing is taken out and immersed in the polishing composition for 1 minute.
(5c) The object holder for polishing is taken out and immersed in a container containing ion-exchanged water for 1 second.
(6c) Take out the above-mentioned object holder for polishing, and blow air with an air gun or the like until the excess water is blown off.
(7c) The above-mentioned object holder for polishing object is installed in a dynamic wettability tester 6200TN manufactured by Reska Co., Ltd.
(8c) The object-bearing tool to be polished is immersed in a polishing composition previously installed in a dynamic wettability tester at a speed of 0.2 mm / sec for 10 mm and held for 2 seconds.
(9c) The object holder for polishing is pulled up at a speed of 0.2 mm / sec.
(10c) The forward wetting stress by the above test is measured.
The results obtained are shown in Table 2.

<Evaluation of flatness>
The polishing composition according to each example was used as it was as a polishing liquid, a polishing test was performed on a silicon wafer, polishing was performed under the following conditions, and the flatness was evaluated by the value of SFQR. SFQR indicates a surface reference thickness deviation within a specified size on a silicon wafer, and the smaller the value, the better the flatness. The object to be polished was the same as described above (thickness: 785 μm). The results are shown in Tables 1 and 2.
[Polishing conditions]
Polishing equipment: Double-sided polishing machine manufactured by Speedfam Co., Ltd., model "DSM20B-5P-4D"
Polishing pressure: 17.5 kPa
Upper surface plate rotation speed: 20 rotations / minute (counterclockwise)
Lower platen rotation speed: 20 rotations / minute (clockwise)
Abrasive solution supply rate: 4.5 L / min (100 L of abrasive solution is circulated)
Abrasive temperature: 25 ° C
Polishing allowance: 10 μm
[Evaluation conditions]
Evaluation device: Substrate flatness measuring device manufactured by Kuroda Precision Industries, Ltd., model "Nanometro 300TT"
Evaluation item: Of the SFQRs having a site size of 25 mm × 25 mm (edge exclusion area 2 mm), the average value of SFQRs at 32 locations on the outer peripheral portion of the wafer (hereinafter, “SFQR”).

As shown in Table 1, Examples 1 and 2 using the polishing liquid having the smallest Cc clearly show the SFQR value indicating the flatness of the substrate as compared with Comparative Examples 1 and 2 having the smallest non-Cc. It was good.

Further, as shown in Table 2, in Example 3 using the polishing liquid having the largest Tc, the value of SFQR indicating the flatness of the substrate is clear as compared with Comparative Examples 3, 4 and 5 having the largest Tc other than Tc. Was good.

Although specific examples of the present invention have been described in detail above, these are merely examples and do not limit the scope of claims. The techniques described in the claims include various modifications and modifications of the specific examples illustrated above.

11 Single-sided polishing device,
14 Polishing pad,
12-turn surface plate,
13a arrow,
13 1st shaft,
15 Polishing object holder,
16a arrow,
16 2nd shaft,
17 ceramic plate,
18 Polishing object holding hole,
19 Polishing object holding plate,
21 Polishing composition feeder,
21a nozzle,
22 Double-sided polishing device 23 Lower platen,
24 upper surface plate,
25 processing carrier,
26 Polishing composition supply gutter.

Claims (6)

It is a method of polishing an object to be polished.
The process of holding the object to be polished in the object holding hole of the object to be polished, and
The process of supplying the polishing composition onto the polishing pad and
The process of pressing the object to be polished against the polishing pad and
A polishing method including a step of rotating the polishing pad.
In the polishing method, the conformability Wp against the polishing pad of the polishing composition, Ww conformability to said polishing object, when the conformability for the polishing object holder was Wc, the largest value of Wc Polishing method to meet the requirements . The polishing method of the polishing composition, Cp a receding contact angle with respect to the polishing pad, Cw a receding contact angle with respect to the object to be polished, when the receding contact angle with respect to said polishing object holder was Cc, Cc values performed so as to satisfy the smallest, the polishing method according to claim 1. The polishing method of the prior SL polishing composition, Tp dynamic surface tension with respect to the polishing pad, wherein the dynamic surface tension for a polishing object Tw, the dynamic surface tension with respect to the polishing object holder and Tc when performed so as to satisfy that the value of Tc is the largest, the polishing method according to請Motomeko 1. The polishing method according to any one of claims 1 to 3, wherein the polishing composition contains a water-soluble polymer and a salt. The polishing object Ru silicon wafer der polishing method according to any one of claims 1 to 4. The polishing method according to any one of claims 1 to 5, wherein both sides of the silicon wafer are polished.

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