JP6804209B2 - Chamfering device and chamfering method - Google Patents

Description

The present invention is suitable as a semiconductor substrate for performing a process of removing an unbonded portion that inevitably remains on the outer peripheral portion of a laminated wafer or a wafer with a film-forming layer on the upper surface layer side, that is, a process of forming a terrace shape. Regarding the chamfering device and the chamfering method.

Since it has advantages such as high speed of the element and low power consumption, as a bonded wafer, another silicon wafer is bonded to one silicon wafer on which an oxide film (insulating film) is formed, and this bonded wafer is bonded. One of the combined silicon wafers is ground and polished to form an SOI layer. Oxygen ions are implanted inside the silicon wafer and then high-temperature annealing is performed to form an oxide film embedded inside the silicon wafer. A silicon wafer for a support substrate is formed by implanting hydrogen ions or the like into the surface layer of a silicon wafer (active layer side wafer) having an SOI layer on the upper part of the oxide film and forming an ion implantation layer on the SOI layer side. It is known that it is pasted together.

In addition, as a method of forming a thin film such as silicon oxide or aluminum which is a material of a circuit on a wafer, a sputtering method in which ions are hit against a metal such as aluminum to peel off molecules and atoms and deposit them on the wafer, and copper wiring are used. An electroplating method for forming a film, a CVD method in which a special gas is supplied to the surface of a wafer to cause a chemical reaction, and a layer of molecules generated there is used as a film, and a silicon oxide film is formed on the surface by heating the wafer. The thermal oxidation that forms is known.

When manufacturing a laminated wafer or a wafer with a film-forming layer, in order to prevent the generation of particles due to peeling / detachment, a process of removing unbonded portions that inevitably remain on the outer peripheral portion of the bonded wafer, that is, a terrace portion forming process is performed. is necessary. In other words, the chamfering machine is used to remove the crystal instability region near the edge of an integral wafer (physically bonded or crystal-growth product) having two or more different material properties, or the part that causes deterioration of device characteristics such as shape sagging. The removal process is performed at.

Therefore, in order to obtain a bonded wafer with improved quality of the terrace portion of the active layer side wafer at low cost without causing scratches on the chamfered portion or deforming the chamfered shape, the active layer side is subjected to surface polishing or etching after the bonding strengthening heat treatment. It is known that the wafer is thinned and the support substrate wafer is subjected to mirror chamfering and terrace processing, and is described in, for example, Patent Document 1.

In addition, wafers used as materials for semiconductor devices and electronic components, and plate-like bodies made of brittle materials of various shapes, such as sapphire, SiC (silicon carbide), GaN (gallium nitride), LT (lithium niobate), and LN. Wafers made of compound semiconductors such as (lithium niobate) and oxide plates are sliced by a slicing device, and then chamfering is performed on the outer peripheral portion to prevent cracking or chipping of the peripheral edges.

Furthermore, even for plate-shaped bodies (workpieces) made of brittle materials, high-precision chamfering is possible without causing cracks or chips, and high-precision finishing is possible. It is known that chamfering is performed by applying ultrasonic vibration, and is described in, for example, Patent Document 2.

JP-A-2010-135662 JP-A-2015-174180

In the above-mentioned prior art, the one described in Patent Document 1 is good for a support substrate wafer in which the active layer side wafer is thinned, but is an integral wafer having two or more different material properties (physically bonded or crystallized). It is difficult to apply to the crystal unstable region near the edge of the (growth product), or the portion that causes the device characteristics to deteriorate due to shape sagging or the like.

Therefore, it is preferable to apply ultrasonic vibration to the wafer for processing, but it is not sufficient to simply perform the processing as described in Patent Document 2.

In the horizontal direction of the wafer, so-called Y notch (radial feed), there is a risk of cracking when the workpiece is fed in the rotating state of the grindstone. In particular, in the case of LT + Si bonding, since LT is transparent, the bonding is misaligned even if the wafer diameters are the same, and if the outer peripheral parts of LT and Si are ground for alignment, the shape cannot be maintained and during grinding. Wafers often cracked. Further, since the grinding resistance on one side is large and the contact range of the grindstone is small, stress is easily concentrated on the tip of the grindstone, the shape is easily deformed, and the bonding is easily peeled off due to the tangential resistance.

Further, continuous grinding, for example, sloof feed grinding, has low processing efficiency, vertical coolant does not flow in and out at the tip, and sludge tends to accumulate, resulting in abnormal wear at the tip and grinding wheel life. Was to decrease.

An object of the present invention is to solve the above-mentioned problems of the prior art, and particularly to achieve high processing efficiency even in processing for forming a terrace shape by Y cutting, and to eliminate cracks in the surface layer of the substrate and peeling of the bonding buffer layer. It is to be low damage processing. Further, it is intended to maintain the grinding performance due to the sharpness of the grindstone or to maintain the accuracy of the grindstone shape by low damage processing.

In order to achieve the above object, the present invention incorporates a ring-shaped piezoelectric element in a chamfering device that forms a terrace shape on the end face of an integral wafer having two or more different material properties, and fits it into the spindle of a grinding unit. A vibrating flange fixed together, a grindstone wheel fitted on the outer periphery of the vibrating flange, a grindstone provided on the lower surface on the outer peripheral side of the grindstone wheel, and a grindstone wheel on the outer peripheral side of the vibrating flange. A ring-shaped piezoelectric element that is arranged so that at least a part of the contact position (processing point) between the grindstone and the wafer is below the contact position (machining point) and vibrates ultrasonically in the Y direction is provided on the grindstone. A terrace is formed on the end face of the wafer by cutting in the Y direction while applying ultrasonic vibration by the piezoelectric element.

Further, in the chamfering device, it is desirable that the grindstone has a tapered portion having a diameter on the upper side larger than that on the lower side on the outer peripheral portion .

Further, in the above, it is desirable that the tapered portion has a taper of 90 ° or more and 150 ° or less from the horizontal plane.

Further, in the chamfering device, it is desirable that the grindstone is divided into a plurality of parts in the circumferential direction of the grindstone wheel and arranged, and a discharge hole for discharging grinding debris is provided between the divided pieces.

Further, in the above, it is desirable that the grindstone wheel is tapered and fitted to the vibrating flange.

Furthermore, before Symbol piezoelectric element is desirably power for driving through a slip ring provided on the spindle is supplied.

Further, the present invention is a chamfering method for forming a terrace shape on the end face of an integral wafer having two or more different material properties, and at least a part of the contact position (machining point) between the grindstone and the workpiece is. It is arranged so as to be lower, using the piezoelectric element of the ring-type ultrasonic vibration in the Y direction, in the outer peripheral portion, the piezoelectric to the tapered portion the diameter of the upper is greater than the lower side is formed grindstone A terrace is formed on the end face of the work piece by cutting while applying ultrasonic vibration in the Y direction by the element .

Further, the present invention is a chamfering method for forming a terrace shape with a grindstone on a wafer composed of an upper layer, an intermediate layer and a lower substrate, and is at least a part of a contact position (processing point) between the grindstone and the wafer. A ring-shaped piezoelectric element that vibrates ultrasonically in the Y direction is used, and the piezoelectric element is formed on a grindstone in which a tapered portion having a larger diameter on the upper side than that on the lower side is formed on the outer peripheral portion. The element cuts the wafer while applying ultrasonic vibration in the Y direction , and removes and processes the upper layer, the intermediate layer, and the lower substrate together to form a terrace on the end face of the wafer.

According to the present invention, a vibrating flange is fixed to the spindle of the grinding unit, and a terrace is formed on the end surface of the work piece (integral wafer) while applying ultrasonic vibration in the Y direction from below the upper surface of the grindstone. On the upper surface side of the work material (integral wafer) , the amplitude due to ultrasonic vibration becomes large, which promotes the inflow and outflow of coolant, promotes the cleaning of the ground surface and the discharge of grinding debris, and improves the processing quality. .. Therefore, the processing efficiency is high, and in addition, cracking of the surface layer portion and peeling of the adhesive layer can be eliminated, and low damage processing can be realized.

Front view showing a main part according to an embodiment of the present invention. Enlarged view of the main part in FIG. 1 (partial sectional view) Top view of the main part according to the embodiment of the present invention as viewed from above. A vertical sectional view of the grindstone wheel according to the embodiment of the present invention and a plan view of the grindstone wheel as viewed from the lower surface side. Explanatory drawing which shows the procedure of Y cutting which concerns on one Embodiment of this invention Explanatory drawing which shows the procedure of Y cutting which concerns on one Embodiment of this invention Explanatory drawing which shows the procedure of Y cutting which concerns on one Embodiment of this invention Explanatory drawing which shows the procedure of Y cutting which concerns on one Embodiment of this invention Explanatory drawing which shows the procedure of Y cutting which concerns on one Embodiment of this invention

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a front view showing a main part of the chamfering device according to an embodiment of the present invention, FIG. 2 is an enlarged view (partial cross-sectional view) of a main part in FIG. 1, and FIG. 3 is a view of the main part from above. It is a plan view, and FIG. 4 is a vertical sectional view of the grindstone wheel 108 and a plan view of the grindstone wheel as viewed from the lower surface side.

The chamfering device 50 utilizes ultrasonic vibration to plate-like bodies (workpieces) of wafers and brittle materials of various shapes, such as sapphire, SiC (silicon carbide), GaN (gallium nitride), and LT (lithium tantalate). ), Etc. is a device that chamfers the outer peripheral portion of a workpiece of a compound semiconductor or oxide. However, it is not necessarily limited to the plate-shaped body made of a brittle material, and it is also possible to chamfer the outer peripheral portion of the plate-shaped body made of an arbitrary material. In the following, the work to be chamfered will be described as being a wafer.

As shown in the figure, the chamfering device 50 includes a wafer feed unit 50A and a grinding unit 50B. A pair of Y-axis guide rails 52, 52 are laid at predetermined intervals on the base plate 51 horizontally arranged on the wafer feed unit 50A. A Y-axis table 56 is slidably supported on the pair of Y-axis guide rails 52, 52 via Y-axis linear guides 54, 54, ....

A nut member 58 is fixed to the lower surface of the Y-axis table 56, and a Y-axis ball screw 60 is screwed onto the nut member 58. The Y-axis ball screw 60 is rotatably supported between a pair of Y-axis guide rails 52, 52 by bearing members 62, 62 whose both ends are arranged on the base plate 51, and Y-axis ball screw 60 is rotatably supported at one end thereof. The shaft motor 64 is connected.

By driving the Y-axis motor 64, the Y-axis ball screw 60 rotates, and the Y-axis table 56 slides in the horizontal direction (Y-axis direction) along the Y-axis guide rails 52 and 52 via the nut member 58. ..

A pair of X-axis guide rails 66, 66 are laid on the Y-axis table 56 so as to be orthogonal to the pair of Y-axis guide rails 52, 52. The X-axis table 70 is slidably supported on the pair of X-axis guide rails 66, 66 via the X-axis linear guides 68, 68, ....

A nut member 72 is fixed to the lower surface of the X-axis table 70, and an X-axis ball screw 74 is screwed onto the nut member 72. The X-axis ball screw 74 is rotatably supported between a pair of X-axis guide rails 66, 66 by bearing members 76, 76 whose both ends are arranged on the X-axis table 70, one of which is rotatably supported. The output shaft of an X-axis motor (not shown) is connected to the end. Therefore, by driving the X-axis motor, the X-axis ball screw 74 rotates, and the X-axis table 70 slides in the horizontal direction (X-axis direction) along the X-axis guide rails 66 and 66 via the nut member 72. To do.

A Z-axis base 80 is vertically erected on the X-axis table 70, and a pair of Z-axis guide rails 82, 82 are laid on the Z-axis base 80 at predetermined intervals. A Z-axis table 86 is slidably supported on the pair of Z-axis guide rails 82, 82 via Z-axis linear guides 84, 84.

A nut member 88 is fixed to the side surface of the Z-axis table 86, and a Z-axis ball screw 90 is screwed into the nut member 88. The Z-axis ball screw 90 is rotatably supported between a pair of Z-axis guide rails 82, 82 by bearing members 92, 92 whose both ends are arranged on the Z-axis base 80, and the lower end portions thereof. The output shaft of the Z-axis motor 94 is connected to the Z-axis motor 94.

By driving the Z-axis motor 94, the Z-axis ball screw 90 rotates, and the Z-axis table 86 slides in the vertical direction (Z-axis direction) along the Z-axis guide rails 82 and 82 via the nut member 88. .. A θ-axis motor 96 is installed on the Z-axis table 86.

A θ-axis shaft 98 having a θ-axis (rotational axis θ) parallel to the Z-axis as an axis is connected to the output shaft of the θ-axis motor 96, and a suction table (holding table) is connected to the upper end of the θ-axis shaft 98. ) 10 are connected horizontally. The terrace chamfered wafer W is placed on the suction table 10 and held by vacuum suction.

In the wafer feed unit 50A, the suction table 10 horizontally moves in the Y-axis direction in the figure by driving the Y-axis motor 64, and horizontally moves in the X-axis direction in the figure by driving the X-axis motor. Then, by driving the Z-axis motor 94, it moves vertically in the Z-axis direction in the drawing, and by driving the θ-axis motor 96, it rotates around the θ-axis.

A gantry 102 is installed on the base plate 51 of the grinding unit 50B. An outer peripheral motor 104 is installed on the gantry 102, and a spindle 106 having a rotation axis CH parallel to the Z axis as an axis is connected to the output shaft of the outer peripheral motor 104. The grindstone wheel 108 that chamfers the outer peripheral portion of the wafer W is detachably attached to the spindle 106 and rotates by driving the outer peripheral motor 104. A nozzle 121 (FIG. 3) for discharging coolant (grinding liquid) toward a processing point where the wafer W comes into contact with the grindstone wheel 108 is provided.

In the chamfering device 50 configured as described above, the wafer W is chamfered as follows. As a preparatory step before the chamfering, the wafer W to be chamfered is placed on the suction table 10 and held by suction. Then, the outer peripheral motor 104 and the θ-axis motor 96 are driven to rotate both the grinding wheel 108 and the suction table 10 at high speed in the same direction. For example, the rotation speed of the grindstone wheel 108 is 3000 rpm, and the rotation speed of the suction table 10 is such that the outer peripheral speed of the wafer W is 5 mm / sec.

Further, the Z-axis motor 94 is driven to adjust the height of the suction table 10 so that the height of the wafer W corresponds to the height of the grinding groove 110 of the grindstone wheel 108. Further, the X-axis motor is driven to match the positions of the θ-axis (rotational axis θ), which is the rotation axis of the wafer W, with the rotation axis CH of the grindstone wheel 108 in the X-axis direction.

Next, as an execution step of chamfering, the Y-axis motor 64 is driven to feed the wafer W toward the grindstone wheel 108. Then, the speed is reduced immediately before the outer peripheral portion of the wafer W comes into contact with the grindstone wheel 108, and then the wafer W is sent toward the grindstone wheel 108 at a low speed.

As a result, the outer peripheral portion of the wafer W is in sliding contact with the grindstone wheel 108, and is ground and chamfered in minute increments as described below. Further, the coolant is discharged from the nozzle 121 toward the machining point, and the grinding debris and the abrasion powder of the grindstone (crushed / dropped abrasive grains) are discharged together with the cooling of the machining point.

Then, when the outer peripheral portion of the wafer W reaches the deepest portion of the grinding groove 110 and a predetermined time elapses, the chamfering process is completed, and the wafer W is moved in a direction away from the grindstone wheel 108 to a position where the wafer W is collected. Move.

FIG. 2 is an enlarged view of a main part in FIG. 1, in which 22 is a vibrating flange, and a ring-shaped piezoelectric element 21 having a ring shape is incorporated and fitted to and fixed to a spindle 106. The grindstone wheel 108 is tapered and fitted to the vibration flange 22 so as not to cause vibration loss.

Further, the ring-shaped piezoelectric element 21 is installed on the outer peripheral side of the vibrating flange 22, close to the grindstone wheel 108, below the upper surface of the grindstone 24, and on the bottom surface side of the grindstone wheel 108. The piezoelectric element 21 is arranged so that at least a part of the piezoelectric element 21 is below the contact position (processing point) between the grindstone 24 and the wafer W. Here, in FIG. 2, a part of the piezoelectric element 21 is shown to be arranged below the processing point. As described above, a part of the piezoelectric element 21 may be arranged below the processing point, but it is more preferable that all of the piezoelectric elements 21 are arranged below the processing point.

Further, the ring-shaped piezoelectric element 21 is supplied with power to be driven via a slip ring 23 provided on the spindle 106 that can withstand high rotation, and ultrasonically vibrates in the left-right direction, that is, in the Y direction, which is the radial direction in the figure. .. Therefore, the ultrasonic vibration of the piezoelectric element 21 hits parallel to the wafer W on the lower surface side of the grindstone 24, and in the tapered portion 26 of the grindstone 24, the more the processing point goes to the upper side of the tapered portion 26, the more from the piezoelectric element 21. As the moment increases, the vibration direction tilts in the vertical direction. Since the tapered portion 26 has an angle with respect to the horizontal plane, the vibration applied to the wafer W in contact with the tapered portion 26 is applied to the surface to be machined (contact surface with the tapered portion 26). It becomes close to vertical.

The ultrasonic wave is, for example, a sound wave having a frequency of 20 kHz or more, and the ring-type piezoelectric element 21 vibrates in the Y direction by the ultrasonic wave having a frequency of 20 kHz. However, it may be vibrated by ultrasonic waves having a frequency of 20 kHz or higher. Further, depending on the processing conditions and the like, sound waves having a frequency lower than 20 kHz may be used.

FIG. 4 shows the grindstone wheel 108, and the grindstone 24 is provided on the lower surface on the outer peripheral side thereof. The outer peripheral portion of the grindstone 24 is formed with a tapered portion 26 having a taper of 90 ° or more and 150 ° or less from a horizontal plane having an upper diameter larger than that of the lower side . Further, the grindstone 24 is segmented in the circumferential direction of the grindstone wheel 108, that is, is divided into a plurality of parts, and a discharge hole 25 for discharging grinding debris or the like is provided between the divided pieces.

5 to 9 are explanatory views showing a procedure of Y cutting (radial feed), and show a case where the upper layer 30 on the bonding device side, the adhesive layer and the lower substrate 32 on the intermediate layer 31 are simultaneously removed. Shown. The intermediate layer 31 is formed of an oxide film or the like (insulating layer) and has a relatively low bonding strength. The upper layer 30 on the device side is a material having a relatively low material strength, and the upper layer 30 has a thin finish (Si thin film processing). , GaAS thin film), the lower substrate 32 is the P phase, the intermediate layer 31 is the insulating layer, the upper layer 30 is the N phase (eg Si-on-Si), and the product has device characteristics in two or three phases, the upper layer. It is suitable for cases such as a highly brittle material in which the intermediate layer 31 and the upper layer are cracked when the 30 is thinned.

First, as shown in FIG. 6, the upper layer 30 is thinned or flattened after film formation with a wrap or grinder, and the mechanical removal action of abrasive grains and the chemical action of the metal film surface by a polishing liquid (slurry) are used in combination. Polishing is performed, that is, stress is removed and smoothed by CMP.

Next, as shown in FIG. 7, the chamfering device cuts in the Y direction (left direction in the drawing). At this time, ultrasonic vibration is propagated to the grindstone 24 in the Y direction. A tapered portion 26 is formed on the grindstone 24, and ultrasonic vibration is applied from the lower side of the grindstone 24. Therefore, in the tapered portion 26, the ultrasonic vibration is close to perpendicular to the (machining surface), and the machining efficiency is prioritized. .. On the other hand, the processed surfaces of the lower surface of the grindstone 24 and the lower substrate 32 side are polished and mirror-processed because the ultrasonic vibrations are in the parallel direction.

On the upper surface side of the grindstone 24, particularly on the tapered portion 26, the closer the machining point is to the upper surface of the wafer W, the larger the amplitude due to ultrasonic vibration, and the closer the gap between the grindstone 24 and the wafer W is to the upper surface of the wafer W. As it becomes larger, it becomes easier for coolant to enter and cavitation occurs. Cavitation increases at the upper tip of the grindstone 24, and sludge is discharged to the upper portion where the contact area between the grindstone 24 and the wafer W is small.

The grindstone 24 is a metal bond having a mesh size of about # 400 to # 800, and is adjusted in consideration of the life and processing quality of the grindstone 24. It is desirable that the spindle rotation speed on the grindstone side is 1000 to 4000 rpm, the rotation speed on the work side is 50 to 200 rpm, and the cutting speed is 0.1 to 5 mm / sec, but it is appropriately selected depending on the material.

Next, as shown in FIG. 8, a terrace is formed in the upper layer 30, and the intermediate layer 31 and the lower substrate 32 are removed at the same time. Then, as shown in FIG. 9, the lower substrate 32 is thinned or formed into a thin film with a wrap or a grinder, and then flattened. Next, stress is removed and smoothed by CMP, and dicing is performed to make chips.

As described above, by propagating the ultrasonic vibration to the processing wheel from below, it is possible to prevent clogging at the processing point due to the cavitation effect, which makes it difficult for coolant to enter and sludge to be discharged. In particular, when cutting in the Y direction, (1) ultrasonic vibration is applied in the Y direction, (2) the grindstone 24 has a tapered portion 26 having a large upper side and a smaller lower side on the outer peripheral portion thereof, (3). ) The piezoelectric element 21 is arranged so as to be lower than the upper surface of the grindstone 24 and lower than the processing point with the wafer W, so that the processing point approaches the upper surface of the wafer W, that is, as it goes to the tip. As a result, cavitation increases and sludge is discharged to the upper part.

Further, on the upper surface side of the wafer W, the amplitude due to the ultrasonic vibration becomes large, which promotes the inflow and outflow of the coolant. Therefore, cleaning of the ground surface and discharge of grinding debris are promoted, the amount of protrusion of the grinding abrasive grains is stably secured, and the processing quality is improved.

Further, since the abrasive grains are vibrated in the Y direction, which is the feed direction (removal direction), the original cutting ability and the vibration acceleration motion of the abrasive grains are added, and the grinding performance is improved. As a result, low damage processing can be performed in the Y direction, and in cases such as a highly brittle material in which the grinding resistance of either the upper layer 30 or the lower substrate 32 is large, the shape is easily deformed, and the bonding is easily peeled off. However, the upper layer 30 and the lower substrate 32 on the bonding device side can be removed at the same time.

In addition, by matching the cutting direction and the ultrasonic vibration direction, cavitation is generated on the side parallel to the ultrasonic vibration direction and the cutting direction, and rough processing can be performed by properly using the cutting direction and the ultrasonic vibration direction. It can be used properly according to the purpose such as precision processing. As a result, poor lubrication to the abrasive grains and dispersion of the machining load can improve the shape maintenance performance of the grindstone, stabilize the work quality, and improve the grindstone life.

Further, the increased mobility of the abrasive grains improves the processing efficiency, and the processing speed is faster than the normal processing speed. Further, by preventing clogging and improving processing performance, a grindstone with a wide contact area can be adopted, so that shape accuracy and grindstone life can be improved. Further, the spindle current is not observed to increase with the lapse of the machining time and is stable, and the removal proceeds well.

W wafer (work material)
10 Suction table 21 Piezoelectric element 22 Vibration flange 23 Slip ring 24 Grinding stone 25 Discharge hole 26 Tapered part 30 Upper layer 31 Intermediate layer 32 Lower substrate 50 Chamfering device 50A Wafer feed unit 50B Grinding unit 106 Spindle 108 Grinding wheel

Claims (8)

In a chamfering device that forms a terrace shape on the end face of an integral wafer having two or more different material properties.
A vibrating flange with a built-in ring-shaped piezoelectric element that is fitted and fixed to the spindle of the grinding unit .
A grindstone wheel fitted to the outer circumference of the vibrating flange,
A grindstone provided on the lower surface on the outer peripheral side of the grindstone wheel,
A ring type that is close to the grindstone wheel on the outer peripheral side of the vibrating flange and is arranged so that at least a part of the contact position (machining point) between the grindstone and the wafer is on the lower side and ultrasonically vibrates in the Y direction. Piezoelectric element and
The chamfering device is characterized in that the grindstone is cut in the Y direction while applying ultrasonic vibration by the piezoelectric element to form a terrace on the end face of the wafer . The chamfering device according to claim 1, wherein the grindstone has a tapered portion having a diameter on the upper side larger than that on the lower side . The chamfering device according to claim 2, wherein the tapered portion has a taper of 90 ° or more and 150 ° or less from a horizontal plane. Any of claims 1 to 3, wherein the grindstone is divided into a plurality of parts in the circumferential direction of the grindstone wheel, and discharge holes for discharging grinding debris are provided between the divided pieces. The chamfering device according to item 1. The chamfering device according to any one of claims 1 to 4, wherein the grindstone wheel is tapered and fitted to the vibrating flange. The chamfering device according to any one of claims 1 to 5, wherein power is supplied to the piezoelectric element to drive the piezoelectric element via a slip ring provided on the spindle. A chamfering method for forming a terrace shape on the end face of an integral wafer having two or more different material properties , so that at least a part of the contact position (machining point) between the grindstone and the work material is below. A ring-shaped piezoelectric element that is arranged and ultrasonically vibrates in the Y direction is used, and a tapered portion having an upper diameter larger than that of the lower side is formed on the outer peripheral portion of the grindstone. A chamfering method characterized in that a terrace is formed on the end face of the work material by cutting while applying ultrasonic vibration. A chamfering method in which a terrace shape is formed on a wafer composed of an upper layer, an intermediate layer, and a lower substrate by a grindstone so that at least a part of the wafer is below the contact position (processing point) between the grindstone and the wafer. A ring-shaped piezoelectric element that vibrates ultrasonically in the Y direction is used, and a tapered portion having a larger diameter on the upper side than the lower side is formed on the outer peripheral portion of the wafer. A chamfering method characterized in that a terrace is formed on an end face of the wafer by cutting while applying sonic vibration and removing both the upper layer, the intermediate layer, and the lower substrate.