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JP6789791B2 - Semiconductor device manufacturing equipment and manufacturing method - Google Patents

Semiconductor device manufacturing equipment and manufacturing method Download PDF

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JP6789791B2
JP6789791B2 JP2016241055A JP2016241055A JP6789791B2 JP 6789791 B2 JP6789791 B2 JP 6789791B2 JP 2016241055 A JP2016241055 A JP 2016241055A JP 2016241055 A JP2016241055 A JP 2016241055A JP 6789791 B2 JP6789791 B2 JP 6789791B2
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substrate
crimping
temporary
semiconductor device
semiconductor chip
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JP2018098337A (en
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昇 朝日
昇 朝日
寺田　勝美
勝美 寺田
敏行 陣田
敏行 陣田
雅史 千田
雅史 千田
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Toray Engineering Co Ltd
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Toray Engineering Co Ltd
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Priority to JP2016241055A priority Critical patent/JP6789791B2/en
Priority to CN201780084205.4A priority patent/CN110235230A/en
Priority to PCT/JP2017/043743 priority patent/WO2018110376A1/en
Priority to KR1020197019992A priority patent/KR20190095352A/en
Priority to TW106143316A priority patent/TWI729246B/en
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、半導体装置の製造装置および製造方法に関する。より詳しくは、半導体チップを熱硬化性接着剤を介して基板もしくは他の半導体チップに熱圧着して電気的に接続すると共に機械的に固定する半導体装置の製造装置および製造方法に関する。 The present invention relates to a semiconductor device manufacturing apparatus and a manufacturing method. More specifically, the present invention relates to a manufacturing apparatus and a manufacturing method of a semiconductor device in which a semiconductor chip is thermocompression-bonded to a substrate or another semiconductor chip via a thermosetting adhesive to be electrically connected and mechanically fixed.

多数の半導体チップを基板に実装するプロセスとして、図１１（ａ）のように、バンプＢを有する接合面側に未硬化の熱硬化性接着剤Ｒを付与した半導体チップＣを半導体チップＣを基板Ｗ上のパッド電極Ｅと位置合わせ（図１１（ｂ））して仮圧着（図１１（ｃ））する仮圧着工程と、加熱圧着を行ってバンプＢを溶融してパッド電極Ｅに接合するとともに熱硬化性接着剤Ｒを硬化して機械的に固定（図１１（ｄ））する本圧着工程とに分ける仮本分割プロセスが知られている。 As a process of mounting a large number of semiconductor chips on a substrate, as shown in FIG. 11A, a semiconductor chip C in which an uncured thermosetting adhesive R is applied to a bonding surface side having bumps B is attached to the semiconductor chip C as a substrate. A temporary crimping step of aligning with the pad electrode E on W (FIG. 11 (b)) and temporarily crimping (FIG. 11 (c)) and heat crimping to melt the bump B and join it to the pad electrode E. A temporary book splitting process is known in which the thermosetting adhesive R is cured and mechanically fixed (FIG. 11 (d)) together with the main crimping step.

一般的に、仮圧着工程に要する時間に比べて本圧着工程に要する時間は長いが、仮本分割プロセスでは、仮圧着状態にある半導体チップＣａ（図１１（ｃ））を複数個同時に熱圧着することが可能である。このため、半導体チップ１つずつを所定箇所に配置して熱圧着まで行なう一貫プロセスに比べて、大幅なタクトタイム短縮が可能になる。 Generally, the time required for the main crimping process is longer than the time required for the temporary crimping process, but in the temporary book splitting process, a plurality of semiconductor chips Ca (FIG. 11 (c)) in the temporary crimping state are thermocompression bonded at the same time. It is possible to do. For this reason, it is possible to significantly reduce the tact time as compared with the integrated process in which each semiconductor chip is arranged at a predetermined position and thermocompression bonding is performed.

この仮本分割プロセスは、従来、図１２および図１３に例示する仮圧着装置２００と本圧着装置３００によって行なわれている。 This temporary book division process has conventionally been performed by the temporary crimping device 200 and the main crimping device 300 illustrated in FIGS. 12 and 13.

仮圧着装置２００は、ＸＹθ方向に位置調整可能なボンディングステージ２０１が保持した基板Ｗに仮圧着ヘッド２０４が半導体チップＣを１つずつ仮圧着し、仮圧着完了後は図１４（ａ）のように所定箇所に仮圧着状態の半導体チップＣａが配置される。また、本圧着装置３００は、ＸＹθ方向に位置調整可能なボンディングステージ３０１が保持した基板Ｗに、仮固定された半導体チップＣａを複数単位で本圧着ヘッド３０４により熱圧着する。図１４（ｂ）の例では、本圧着ヘッドが熱圧着を行なう加圧面Ａｂは、仮圧着状態の半導体チップＣａの４個（縦横２個ずつ）に相当し、４個同時に熱圧着されて熱圧着済みの半導体チップＣｂとなる。 In the temporary crimping device 200, the temporary crimping head 204 temporarily crimps the semiconductor chips C one by one to the substrate W held by the bonding stage 201 whose position can be adjusted in the XYθ direction, and after the temporary crimping is completed, as shown in FIG. 14A. A semiconductor chip Ca in a temporarily crimped state is arranged at a predetermined position. Further, the present crimping apparatus 300 thermocompression-bonds a plurality of units of temporarily fixed semiconductor chips Ca to the substrate W held by the bonding stage 301 whose position can be adjusted in the XYθ direction by the present crimping head 304. In the example of FIG. 14B, the pressurizing surface Ab on which the main crimping head is thermocompression-bonded corresponds to four semiconductor chips Ca (two in each of the vertical and horizontal directions) in the temporarily crimped state, and four of them are thermocompression-bonded at the same time to generate heat. It is a crimped semiconductor chip Cb.

特開２０１４−２３６０２１号公報Japanese Unexamined Patent Publication No. 2014-236021

従来の仮本分割プロセスでは、図１４（ａ）のように基板Ｗに仮圧着すべき半導体チップを全て配置した後に、図１４（ｂ）のように本圧着を行なっているが、本圧着を行なっている半導体チップに隣接する仮圧着状態の半導体チップＣａも加熱してしまうことがある。特に、基板Ｗがシリコンウェハのように熱伝導率の高い材質で構成されていると基板Ｗ経由での伝熱も無視できなくなる。 In the conventional temporary book splitting process, after all the semiconductor chips to be temporarily crimped are arranged on the substrate W as shown in FIG. 14 (a), the main crimping is performed as shown in FIG. 14 (b). The semiconductor chip Ca in the temporarily crimped state adjacent to the semiconductor chip being used may also be heated. In particular, if the substrate W is made of a material having high thermal conductivity such as a silicon wafer, heat transfer via the substrate W cannot be ignored.

このように、本来熱圧着すべき半導体チップに隣接する仮圧着状態の半導体チップＣａ
が加熱された場合、該半導体チップＣａに付与された熱硬化性接着剤Ｒの硬化が進み、図１１（Ｃ）のようなバンプＢとパッド電極Ｅが未接合の状態で固定されてしまう懸念がある。 In this way, the semiconductor chip Ca in the temporarily crimped state adjacent to the semiconductor chip that should be thermocompression bonded originally.
When the semiconductor chip Ca is heated, the thermosetting adhesive R applied to the semiconductor chip Ca is cured, and there is a concern that the bump B and the pad electrode E as shown in FIG. 11C are fixed in an unbonded state. There is.

このため、本圧着工程で、本来熱圧着すべき半導体チップ以外の、仮圧着状態の半導体チップＣａの昇温を防ぐ手法が種々検討されている。中でも、特許文献１に記されている手法は、仮圧着部と本圧着部を往復可能なステージを用い、本圧着時に加圧面に隣接する箇所に仮圧着状態の半導体チップＣａが存在しないように、仮圧着と本圧着を繰り返し行なうものである。この手法は、加圧面に隣接する仮圧着状態の半導体チップＣａが存在しないことから、熱硬化性接着剤Ｒの不必要な硬化を防ぐ有効な手段である。 Therefore, in this crimping step, various methods for preventing the temperature rise of the semiconductor chip Ca in the temporarily crimped state other than the semiconductor chip that should be thermocompression-bonded have been studied. Among them, the method described in Patent Document 1 uses a stage capable of reciprocating between the temporary crimping portion and the main crimping portion so that the semiconductor chip Ca in the temporary crimping state does not exist at a position adjacent to the pressure surface during the main crimping. , Temporary crimping and main crimping are repeated. This method is an effective means for preventing unnecessary curing of the thermosetting adhesive R because there is no semiconductor chip Ca in a temporarily crimped state adjacent to the pressure surface.

この手法を行なう装置構成の一例を図１５に示すが、仮圧着部４０２と本圧着部４０３とステージ４０４によって構成されており、ステージ４０４は基板Ｗを保持した状態で仮圧着部４０２と本圧着部４０３の間を移動可能に設けられている（図１６（ａ）および図１６（ｂ））。 An example of an apparatus configuration for performing this method is shown in FIG. 15, which is composed of a temporary crimping portion 402, a main crimping portion 403, and a stage 404, and the stage 404 holds the substrate W and holds the temporary crimping portion 402 and the main crimping portion 402. It is provided so as to be movable between the portions 403 (FIGS. 16 (a) and 16 (b)).

ところで、仮圧着工程では熱硬化性接着剤Ｒを軟化する程度に加熱して１つずつ加圧するのに対し、本圧着工程では熱硬化性樹脂の加熱硬化に抗して複数同時に加圧する必要があることから、基板Ｗおよび基板を保持するステージに加わる荷重は、仮圧着工程と本圧着工程では大きく異なり、本圧着工程に用いるステージには高荷重に耐える剛性が必要である。 By the way, in the temporary crimping step, the thermosetting adhesive R is heated to the extent of softening and pressed one by one, whereas in the main crimping step, it is necessary to pressurize a plurality of thermosetting resins at the same time against the heat curing of the thermosetting resin. Therefore, the load applied to the substrate W and the stage holding the substrate differs greatly between the temporary crimping process and the main crimping process, and the stage used in the main crimping process needs to have rigidity to withstand a high load.

ところが、図１６（ａ）および図１６（ｂ）に示すように、ステージ４０４を移動可能にした場合、充分な剛性を備えることが難しく、本圧着工程においてステージ表面に歪みが生じ、熱圧着後の半導体チップＣｂに位置ズレが誘起されることがある。特に、基板Ｗの大型化に伴い、位置ズレ量が無視出来なくなっている。 However, as shown in FIGS. 16A and 16B, when the stage 404 is movable, it is difficult to provide sufficient rigidity, and the stage surface is distorted in the main crimping step, and after thermocompression bonding. The position shift may be induced in the semiconductor chip Cb of the above. In particular, as the size of the substrate W increases, the amount of misalignment cannot be ignored.

本発明は上記課題に鑑みてなされたものであり、半導体チップを熱硬化性接着剤を介して基板に仮圧着する仮圧着工程と、基板上に仮圧着された半導体チップを加熱圧着する本圧着工程からなる仮本分割プロセスで半導体装置を製造するのに際して、本圧着工程において位置ズレを防ぎ、熱圧着対象以外の半導体チップに熱的な悪影響を及ぼすことがない、半導体装置の製造装置および製造方法を提供するものである。 The present invention has been made in view of the above problems, and is a temporary crimping step of temporarily crimping a semiconductor chip to a substrate via a thermocurable adhesive and a main crimping of a semiconductor chip temporarily crimped onto the substrate by thermocompression bonding. When manufacturing a semiconductor device by the temporary book splitting process consisting of steps, the semiconductor device manufacturing device and manufacturing that prevent misalignment in the main crimping process and do not have a thermal adverse effect on semiconductor chips other than the thermocompression bonding target. It provides a method.

上記の課題を解決するために、請求項１に記載の発明は、
半導体チップに形成されたバンプと基板上に形成されたパッド電極とを電気的に接続するとともに、前記半導体チップを前記基板上に固定する、半導体装置の製造装置であって、
前記半導体チップを保持する仮圧着用ヘッドと、前記基板を保持する仮圧着用ステージとを有し、前記半導体チップを前記基板上の所定位置に仮圧着する仮圧着部と、
前記基板上に仮圧着された半導体チップを複数個同時に熱圧着する本圧着用ヘッドと、前記本圧着用ヘッドが熱圧着する範囲を前記基板の裏面から支持するよう前記本圧着用ヘッドに対向するよう固定配置されたバックアップステージとを有し、前記半導体チップに形成されたバンプを溶融して基板上に形成されたパッド電極に電気的に接続するとともに、前記半導体チップを前記基板上に固定する本圧着部と、
前記基板を部分的に保持する保持部を有し、前記基板を、前記仮圧着部から前記本圧着部に移動する機能と、前記本圧着部から前記仮圧着部に移動する機能を有する搬送手段とを備え、
前記仮圧着部では、前記本圧着部で熱圧着を行う加圧面単位で、仮圧着を行なう箇所と、仮圧着を行なわない箇所とを設ける、半導体装置の製造装置である。 In order to solve the above problems, the invention according to claim 1 is
A semiconductor device manufacturing device that electrically connects a bump formed on a semiconductor chip and a pad electrode formed on a substrate and fixes the semiconductor chip on the substrate.
A temporary crimping portion that has a temporary crimping head that holds the semiconductor chip and a temporary crimping stage that holds the substrate, and temporarily crimps the semiconductor chip to a predetermined position on the substrate.
Facing the pressure bonding head so as to support the main compression bonding head to multiple simultaneous thermocompression bonding temporary pressure bonding semiconductor chips on the substrate, the scope of the present crimping head thermocompression bonding from the rear surface of the substrate a fixing arranged backup stage as said with to melt the bumps formed on the semiconductor chip is electrically connected to a pad electrode formed on a substrate, wherein the semiconductor body Chi-up substrate This crimping part to be fixed on the top and
A transport means having a holding portion for partially holding the substrate, and having a function of moving the substrate from the temporary crimping portion to the main crimping portion and a function of moving the substrate from the main crimping portion to the temporary crimping portion. equipped with a door,
The temporary crimping portion is a semiconductor device manufacturing apparatus in which a portion for performing temporary crimping and a portion for performing temporary crimping are provided for each pressure surface unit for which thermocompression bonding is performed at the main crimping portion .

請求項２に記載の発明は、
半導体チップに形成されたバンプと基板上に形成されたパッド電極とを電気的に接続するとともに、前記半導体チップを前記基板上に固定する、半導体装置の製造装置であって、
前記半導体チップを保持する仮圧着用ヘッドと、前記基板を保持して面内方向に移動可能な仮圧着用ステージとを有し、前記半導体チップを前記基板上の所定位置に仮圧着する仮圧着部と、
前記基板上に仮圧着された半導体チップを複数個同時に熱圧着する本圧着用ヘッドと、前記本圧着用ヘッドが熱圧着する範囲を前記基板の裏面から支持するよう前記本圧着用ヘッドに対向するよう固定配置されたバックアップステージとを有し、前記半導体チップに形成されたバンプを溶融して基板上に形成されたパッド電極に電気的に接続するとともに、前記半導体チップを前記基板上に固定する本圧着部と、
前記基板を部分的に保持する保持部を有し、前記仮圧着用ステージとバックアップステージの何れもが保持していない状態の前記基板を、前記仮圧着部から前記本圧着部に移動する機能と、前記本圧着部から前記仮圧着部に移動する機能を有する搬送手段とを備えた半導体装置の製造装置である。 The invention according to claim 2
A semiconductor device manufacturing device that electrically connects a bump formed on a semiconductor chip and a pad electrode formed on a substrate and fixes the semiconductor chip on the substrate.
Temporary crimping that has a temporary crimping head that holds the semiconductor chip and a temporary crimping stage that holds the substrate and can move in the in-plane direction, and temporarily crimps the semiconductor chip to a predetermined position on the substrate. Department and
The main crimping head for simultaneously thermocompression-bonding a plurality of semiconductor chips temporarily crimped on the substrate and the main crimping head facing the main crimping head so as to support the range of the thermocompression bonding from the back surface of the substrate. It has a backup stage fixedly arranged so as to be formed, and the bumps formed on the semiconductor chip are melted and electrically connected to the pad electrodes formed on the substrate, and the semiconductor chip is fixed on the substrate. This crimping part and
A function of moving the substrate, which has a holding portion for partially holding the substrate and is not held by either the temporary crimping stage or the backup stage, from the temporary crimping portion to the main crimping portion. , A semiconductor device manufacturing apparatus including a transport means having a function of moving from the main crimping portion to the temporary crimping portion .

請求項３に記載の発明は、請求項１または請求項２に記載の半導体装置の製造装置であって、
前記半導体チップの接続に熱硬化性接着剤が付与されたものであったとき、
前記仮圧着用ヘッドは前記熱硬化性接着剤を硬化開始温度より低い温度に加熱する機能を有し、前記本圧着用ヘッドは前記熱硬化性接着剤を硬化させる温度まで加熱する機能を有する、半導体装置の製造装置である。

The invention according to claim 3 is the semiconductor device manufacturing apparatus according to claim 1 or 2.
When a thermosetting adhesive is applied to the connection of the semiconductor chip,
The temporary crimping head has a function of heating the thermosetting adhesive to a temperature lower than the curing start temperature, and the main crimping head has a function of heating the thermosetting adhesive to a temperature at which the thermosetting adhesive is cured. It is a manufacturing device for semiconductor devices.

請求項４に記載の発明は、請求項１から請求項３の何れかに記載の半導体装置の製造装置であって、
前記バックアップステージが前記基板を支持する面が、前記基板よりも小さく、前記本圧着用ヘッドに対応した形状を有する半導体装置の製造装置である。 The invention according to claim 4 is a semiconductor device manufacturing apparatus according to any one of claims 1 to 3.
This is a semiconductor device manufacturing device in which the surface on which the backup stage supports the substrate is smaller than that of the substrate and has a shape corresponding to the main crimping head.

請求項５に記載の発明は、請求項１から請求項４の何れかに記載の半導体装置の製造装置であって、
前記仮圧着部から前記本圧着部まで前記基板を移動する前記搬送手段の前記保持部が、前記本圧着部においても前記基板を保持する半導体装置の製造装置である。 The invention according to claim 5 is the semiconductor device manufacturing apparatus according to any one of claims 1 to 4.
The holding portion of the transport means for moving the substrate from the temporary crimping portion to the main crimping portion is a manufacturing apparatus for a semiconductor device that holds the substrate even in the main crimping portion.

請求項６に記載の発明は、請求項１から請求項５の何れかに記載の半導体装置の製造装置であって、
前記搬送手段を複数有する半導体装置の製造装置である。 The invention according to claim 6 is a semiconductor device manufacturing apparatus according to any one of claims 1 to 5.
This is a semiconductor device manufacturing device having a plurality of the transport means.

請求項７に記載の発明は、請求項１から請求項６の何れかに記載の半導体装置の製造装置であって、
前記仮圧着用ステージの前記基板を保持する面が前記基板より小さい半導体装置の製造装置である。 The invention according to claim 7 is the semiconductor device manufacturing apparatus according to any one of claims 1 to 6.
This is a manufacturing device for a semiconductor device in which the surface of the temporary crimping stage that holds the substrate is smaller than that of the substrate.

請求項８に記載の発明は、
半導体チップを基板上の所定位置に仮圧着する仮圧着工程と、前記基板に仮圧着された前記半導体チップを複数同時に熱圧着する本圧着工程とを備え、
前記仮圧着工程では、前記熱圧着を行う加圧面単位で、仮圧着を行なう箇所と、仮圧着を行なわない箇所とを設定し、前記本圧着工程では、前記熱圧着を行う加圧面を支持する形状のバックアップステージを用いる半導体装置の製造方法である。 The invention according to claim 8 is
A temporary crimping step of temporarily crimping a semiconductor chip to a predetermined position on a substrate and a main crimping step of simultaneously thermocompression-bonding a plurality of the semiconductor chips temporarily crimped to the substrate are provided.
In the temporary crimping step, a place where the temporary crimping is performed and a place where the temporary crimping is not performed are set for each pressure surface to be thermocompression bonded, and in the main crimping step, the pressure surface to be thermocompression bonded is supported. This is a method for manufacturing a semiconductor device using a shape backup stage.

請求項９に記載の発明は、請求項８に記載の半導体装置の製造方法であって、
前記半導体チップの接続に熱硬化性接着剤が付与されたものであったとき、
前記仮圧着工程では前記熱硬化性接着剤を硬化開始温度より低い温度に加熱し、前記本圧着工程では前記熱硬化性樹脂を硬化させる温度まで加熱する、半導体装置の製造方法である。 The invention according to claim 9 is the method for manufacturing a semiconductor device according to claim 8.
When a thermosetting adhesive is applied to the connection of the semiconductor chip,
This is a method for manufacturing a semiconductor device, in which the thermosetting adhesive is heated to a temperature lower than the curing start temperature in the temporary crimping step, and heated to a temperature at which the thermosetting resin is cured in the main crimping step.

請求項１０に記載の発明は、請求項８または請求項９に記載の半導体装置の製造方法であって、
前記本圧着工程で前記基板に仮圧着された前記半導体チップを熱圧着した後に、前記基板に前記半導体チップを仮圧着すべき箇所が残されている場合、前記本圧着工程後の前記基板を前記仮圧着工程に戻す半導体装置の製造方法である。 The invention according to claim 10 is the method for manufacturing a semiconductor device according to claim 8 or 9.
After the semiconductor chip temporarily crimped to the substrate in the main crimping step is thermocompression-bonded, if a portion to be temporarily crimped to the semiconductor chip remains on the substrate, the substrate after the main crimping step is referred to. This is a method for manufacturing a semiconductor device that returns to the temporary crimping process.

本発明により、半導体チップを熱硬化性接着剤を介して基板に仮圧着する仮圧着工程と、基板上に仮圧着された半導体チップを加熱圧着する本圧着工程からなる仮本分割プロセスで半導体装置を製造するのに際して、本圧着工程において位置ズレを防ぎ、熱圧着対象以外の半導体チップに熱的な悪影響を及ぼすことがない。 According to the present invention, a semiconductor device is a temporary book splitting process consisting of a temporary crimping step of temporarily crimping a semiconductor chip to a substrate via a thermocurable adhesive and a main crimping step of thermocompression bonding the semiconductor chip temporarily crimped on the substrate. In the main crimping process, the position shift is prevented, and the semiconductor chips other than the thermocompression bonding target are not adversely affected by heat.

本発明の一実施形態に係る半導体装置の製造装置の構成を示す概略図である。It is the schematic which shows the structure of the manufacturing apparatus of the semiconductor apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体装置の製造装置の構成要素について説明する概略図である。It is the schematic explaining the component of the manufacturing apparatus of the semiconductor apparatus which concerns on one Embodiment of this invention. （ａ）本発明の一実施形態に係る半導体装置の製造装置において搬送機構が仮圧着部で基板を保持する状態を示す図である（ｂ）同搬送機構が本圧着部で基板を保持する状態を示す図である。(A) It is a figure which shows the state which the transfer mechanism holds a substrate in a temporary crimping part in the manufacturing apparatus of the semiconductor device which concerns on one Embodiment of this invention (b) the state which the same transfer mechanism holds a substrate in this crimping part. It is a figure which shows. （ａ）本発明の一実施形態に係る半導体装置の製造装置において搬送機構が仮圧着部で基板を保持する状態の別の例を示す図である（ｂ）同搬送機構が本圧着部で基板を保持する状態の別の例を示す図である。(A) It is a figure which shows another example of the state which the transfer mechanism holds a substrate in a temporary crimping part in the manufacturing apparatus of the semiconductor device which concerns on one Embodiment of this invention (b) the same transfer mechanism is a substrate in this crimping part. It is a figure which shows another example of the state which holds. （ａ）本発明の一実施形態で用いる基板を示す図である（ｂ）同基板に１回目の仮圧着を行なった状態を例示する図である（ｃ）同仮圧着後の半導体チップを本圧着した後の状態を例示する図である。(A) It is a figure which shows the substrate used in one Embodiment of this invention (b) is a figure which illustrates the state which performed the 1st temporary crimping on the same substrate, (c) is the semiconductor chip after the said temporary crimping. It is a figure which illustrates the state after crimping. （ｄ）本発明の一実施形態で用いる基板に２回目の仮圧着を行なった状態を例示する図である（ｅ）同仮圧着後の半導体チップを本圧着した後の状態を例示する図である（ｆ）本発明の一実施形態で用いる基板に３回目の仮圧着を行なった状態を例示する図である。(D) A diagram illustrating a state in which a second temporary crimping is performed on the substrate used in one embodiment of the present invention (e) A diagram illustrating a state after the semiconductor chip after the temporary crimping is main-crimped. (F) It is a figure which illustrates the state which performed the 3rd temporary crimping on the substrate used in one Embodiment of this invention. （ｇ）本発明の一実施形態で用いる基板に３回目の仮圧着を行なった半導体チップを本圧着した後の状態を例示する図である（ｈ）本発明の一実施形態で用いる基板に４回目の仮圧着を行なった状態を例示する図である（ｉ）仮圧着後の半導体チップを本圧着した後の状態を例示する図である。(G) It is a figure which illustrates the state after the semiconductor chip which performed the 3rd temporary crimping on the substrate used by one Embodiment of this invention is main crimped (h) 4 on the substrate used by one Embodiment of this invention It is a figure which illustrates the state which performed the temporary crimping a second time (i) is the figure which illustrates the state after the semiconductor chip after the temporary crimping is main crimped. （ａ）本発明の一実施形態の本圧着工程で基板を把持する状態を示した図である（ｂ）同本圧着工程で基板の把持位置変更をした状態を示す図である（ｃ）同把持位置変更の別の状態を示す図である。(A) It is a figure which showed the state which grips a substrate in this crimping process of one Embodiment of this invention (b) is the figure which shows the state which the gripping position of a substrate was changed in the same crimping process. It is a figure which shows another state of a gripping position change. （ａ）本発明の別の実施形態の２セットの搬送手段を説明する図である（ｂ）同搬送手段の高さ関係を説明する図である。(A) It is a figure explaining two sets of transport means of another embodiment of this invention, (b) it is a figure explaining the height relationship of the same transport means. （ａ）本発明の別の実施形態に係る半導体装置の製造装置の構成要素について説明する概略図である（ｂ）同実施形態の変形例に係る半導体装置の製造装置の構成要素について説明する概略図である。(A) It is a schematic diagram explaining the component of the semiconductor device manufacturing apparatus which concerns on another embodiment of this invention (b) is the schematic explaining the component of the semiconductor device manufacturing apparatus which concerns on the modification of the same embodiment. It is a figure. （ａ）バンプ面に熱硬化性接着剤を付与した半導体チップとパッド電極を有する半導体ウェハ基板の断面図である（ｂ）同半導体チップと同半導体ウェハ基板の位置合わせを行った状態を示す断面図である（ｃ）同半導体チップを同半導体ウェハ基板上に仮圧着した状態を示す断面図である（ｄ）同半導体チップを同半導体ウェハ基板上に熱圧着した状態を示す断面図である。(A) A cross-sectional view of a semiconductor wafer substrate having a semiconductor chip having a thermosetting adhesive applied to a bump surface and a pad electrode (b) a cross section showing a state in which the semiconductor chip and the semiconductor wafer substrate are aligned. FIG. 3C is a cross-sectional view showing a state in which the semiconductor chip is temporarily crimped onto the semiconductor wafer substrate, and FIG. 3D is a cross-sectional view showing a state in which the semiconductor chip is thermally crimped onto the semiconductor wafer substrate. 仮本分割プロセスに用いる仮圧着装置の一例を示す図である。It is a figure which shows an example of the temporary crimping apparatus used for the temporary book splitting process. 仮本分割プロセスに用いる本圧着装置の一例を示す図である。It is a figure which shows an example of this crimping apparatus used for a temporary book splitting process. （ａ）仮本分割プロセスにおいて基板全域に仮圧着のみを行なった基板を説明する図である（ｂ）同基板に仮圧着されている半導体チップを複数同時に熱圧着する状態を説明する図である。(A) It is a figure explaining the substrate which only tentatively crimped the whole substrate in the temporary book splitting process, (b) it is a figure explaining the state which a plurality of semiconductor chips temporarily crimped on the same substrate are thermocompression bonded at the same time. .. 仮本分割プロセスの隣接チップ加熱対策として公知な半導体装置の製造装置の構成を示す該略図である。It is the schematic which shows the structure of the manufacturing apparatus of the semiconductor apparatus known as a measure against heating of the adjacent chip of the temporary book splitting process. （ａ）仮本分割プロセスの隣接チップ加熱対策として公知な半導体装置の製造装置で基板を保持するステージの仮圧着状態での位置を示す図である（ｂ）同ステージの本圧着状態での位置を示す図である。(A) It is a figure which shows the position in the temporary crimping state of the stage which holds a substrate in the manufacturing apparatus of the semiconductor device known as a measure against heating of the adjacent chip of the temporary book splitting process (b) position in the main crimping state of the same stage. It is a figure which shows.

本発明の実施形態の一例について、図面を用いて説明する。
図１は本発明に係る半導体装置の製造装置を示す図である。半導体装置の製造装置１は、図１１（ａ）〜図１１（ｃ）に示すように基板Ｗに半導体チップＣを仮圧着する仮圧着部２と、仮圧着された半導体チップＣａを図１１（ｄ）の状態となるよう加熱圧着する本圧着部３と、基板Ｗを仮圧着部２と本圧着部３の間で双方に移動可能な搬送手段４を基本構成としている。図１
なお、図１では、一部の構成要素が別の構成要素を隠しているので、以下、必要に応じて図２（図３、図４も同様）に示す一部構成要素を省いた図を用いて説明を行なう。 An example of an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram showing a manufacturing apparatus for a semiconductor device according to the present invention. In the semiconductor device manufacturing apparatus 1, as shown in FIGS. 11A to 11C, a temporary crimping portion 2 for temporarily crimping the semiconductor chip C to the substrate W and the temporarily crimped semiconductor chip Ca are shown in FIG. The basic configuration is a main crimping portion 3 for heat crimping so as to be in the state of d), and a transport means 4 capable of moving the substrate W between the temporary crimping portion 2 and the main crimping portion 3. Figure 1
In addition, in FIG. 1, since some components hide other components, the following is a diagram in which some components shown in FIG. 2 (the same applies to FIGS. 3 and 4) are omitted as necessary. It will be explained using.

半導体装置の製造装置１において、架台５は仮圧着部２と本圧着部３で共通な主な構造体であるが、便宜的に仮圧着部２を構成する架台５を仮圧着用架台５２、本圧着部３を構成する架台５を本圧着用架台５３とする（図２）。 In the semiconductor device manufacturing apparatus 1, the gantry 5 is the main structure common to the temporary crimping portion 2 and the main crimping portion 3, but for convenience, the gantry 5 constituting the temporary crimping portion 2 is a temporary crimping pedestal 52. The gantry 5 constituting the crimping portion 3 is used as the crimping pedestal 53 (FIG. 2).

図１において、仮圧着部２から本圧着部３に至る方向をＸ方向、基板Ｗの表面に平行でＸ方向と直交する方向をＹ方向、基板Ｗの表面に対して垂直な方向をＺ方向とし、Ｚ方向を軸とする回転方向をθ方向としている。 In FIG. 1, the direction from the temporary crimping portion 2 to the main crimping portion 3 is the X direction, the direction parallel to the surface of the substrate W and orthogonal to the X direction is the Y direction, and the direction perpendicular to the surface of the substrate W is the Z direction. The direction of rotation about the Z direction is the θ direction.

仮圧着部２は、仮圧着用架台５２、仮圧着用ステージ２１、仮圧着用支持フレーム２２、仮圧着用ユニット２３、仮圧着用ヘッド２４を備えており、仮圧着用架台５２は、仮圧着用ステージ２１と仮圧着用支持フレーム２２を支持している。 The temporary crimping portion 2 includes a temporary crimping stand 52, a temporary crimping stage 21, a temporary crimping support frame 22, a temporary crimping unit 23, and a temporary crimping head 24. The temporary crimping stand 52 is temporarily crimped. The stage 21 and the support frame 22 for temporary crimping are supported.

仮圧着用ステージ２１は、基板Ｗを保持しつつＸＹ面内で移動させるものである。図２の例では、仮圧着用架台５２上に、Ｙ方向に移動可能なＹ方向可動部２１ａを設け、Ｙ方向可動部２１ａ上にＸ方向可動部２１ｂを設け、Ｘ方向可動部２１ｂ上にθ方向可動部２１ｃを設けた構成となっている。また、θ方向可動部２１ｃは吸着等により基板Ｗを保持する機能を有している。ここで、本実施形態において、θ方向調整は基板Ｗを保持する仮圧着用ステージ２１に設けているが、仮圧着用ヘッド２４がθ方向に回転する機能を有していてもよい。 The temporary crimping stage 21 moves the substrate W in the XY plane while holding the substrate W. In the example of FIG. 2, a Y-direction movable portion 21a movable in the Y direction is provided on the temporary crimping stand 52, an X-direction movable portion 21b is provided on the Y-direction movable portion 21a, and the X-direction movable portion 21b is provided. The structure is provided with a movable portion 21c in the θ direction. Further, the θ-direction movable portion 21c has a function of holding the substrate W by suction or the like. Here, in the present embodiment, the θ direction adjustment is provided on the temporary crimping stage 21 that holds the substrate W, but the temporary crimping head 24 may have a function of rotating in the θ direction.

仮圧着用支持フレーム２２は仮圧着用ユニット２３を支持するものであり、仮圧着用ユニット２３は仮圧着用ヘッド２４をＺ方向に移動させるものである。仮圧着用ヘッド２４は、半導体チップＣを１つずつ吸着保持して、仮圧着用ユニット２３の駆動力を半導体チップＣに伝達するものである。なお、仮圧着用ヘッド２４にはヒータが内蔵され、半導体チップＣに付与されている熱硬化性接着剤Ｒを軟化させる温度範囲で加熱することが出来る。 The temporary crimping support frame 22 supports the temporary crimping unit 23, and the temporary crimping unit 23 moves the temporary crimping head 24 in the Z direction. The temporary crimping head 24 attracts and holds the semiconductor chips C one by one, and transmits the driving force of the temporary crimping unit 23 to the semiconductor chip C. A heater is built in the temporary crimping head 24, and the thermosetting adhesive R attached to the semiconductor chip C can be heated in a temperature range that softens it.

また、図示していないが仮圧着部２は画像認識装置を備えていることが望ましく、半導体チップＣを基板Ｃの所定箇所に位置合わせする際は、画像認識により半導体チップＣと基板Ｗの相対位置を求め、それに応じて仮圧着用ステージ２１を移動させれば良い。 Further, although not shown, it is desirable that the temporary crimping portion 2 is provided with an image recognition device, and when the semiconductor chip C is aligned with a predetermined position on the substrate C, the semiconductor chip C and the substrate W are relative to each other by image recognition. The position may be obtained, and the temporary crimping stage 21 may be moved accordingly.

本圧着部３は本圧着用架台５３、バックアップステージ３１、本圧着用支持フレーム３２、本圧着用ユニット３３、本圧着用ヘッド３４を備えており、本圧着用架台５３は、バックアップステージ３１と本圧着用支持フレーム３２を支持している。 The crimping portion 3 includes a main crimping stand 53, a backup stage 31, a main crimping support frame 32, a main crimping unit 33, and a main crimping head 34. The main crimping stand 53 includes a backup stage 31 and a main. It supports the crimping support frame 32.

バックアップステージ３１は、本圧着用ヘッド３４が加熱圧着する範囲を基板Ｗの下面（半導体チップＣａが仮圧着された面の反対側）から支持するものであり、本圧着用ヘッド３４の加圧面Ａｂと対向し、加圧面Ａｂ内の半導体チップＣａのみを支持するよう本圧着用架台５３に固定されている。バックアップステージ３１の表面には、基板Ｗを吸着保持する機能を備えていることが望ましい。また、基板Ｗを加熱するためのヒータを内蔵してもよい。なお、バックアップステージ３１は本圧着用架台５３に固定配置するため、剛性を有する材質で形成することが望ましい。 The backup stage 31 supports the range of heat crimping by the main crimping head 34 from the lower surface of the substrate W (the side opposite to the surface on which the semiconductor chip Ca is temporarily crimped), and the pressure surface Ab of the main crimping head 34. It is fixed to the main crimping stand 53 so as to support only the semiconductor chip Ca in the pressure surface Ab. It is desirable that the surface of the backup stage 31 has a function of sucking and holding the substrate W. Further, a heater for heating the substrate W may be built in. Since the backup stage 31 is fixedly arranged on the crimping stand 53, it is desirable that the backup stage 31 is made of a rigid material.

本圧着用支持フレーム３２は本圧着用ユニット３３を支持するものであり、本圧着用ユニット３３は本圧着用ヘッド３４をＺ方向に移動させるものである。本圧着用ヘッド３４はヒータを内蔵しており、本圧着ヘッド３４の加圧面Ａｂが基板Ｗ上に仮固定された半導体チップＣａに接触した後に、半導体チップＣａを加熱しつつ、本圧着用ユニット３３の駆動力を伝達して加圧するものである。本圧着用ヘッド３４の加圧面Ａｂは、仮固定された半導体チップＣａを複数個同時に加圧する形状を有している。本実施形態において、加圧面Ａｂは図１４（ｂ）と同様に、仮圧着された半導体チップＣａの４個分（縦横２個ずつ）としているが、これに限定するものではなく、これより少なくても多くてもよく、同じ４個でも縦横いずれかに４個であってもよい。また、本圧着用ヘッド３４が内蔵するヒータは、半導体チップＣのバンプＢを溶融するとともに熱硬化性接着剤Ｒを硬化させる温度に昇温する能力を有している。 The crimping support frame 32 supports the crimping unit 33, and the crimping unit 33 moves the crimping head 34 in the Z direction. The main crimping head 34 has a built-in heater, and after the pressure surface Ab of the main crimping head 34 comes into contact with the semiconductor chip Ca temporarily fixed on the substrate W, the main crimping unit is heated while heating the semiconductor chip Ca. The driving force of 33 is transmitted to pressurize. The pressurizing surface Ab of the crimping head 34 has a shape in which a plurality of temporarily fixed semiconductor chips Ca are simultaneously pressurized. In the present embodiment, the pressure surface Ab is the same as that of FIG. 14B, which is equivalent to four temporarily crimped semiconductor chips Ca (two in each of the vertical and horizontal directions), but the pressure surface Ab is not limited to this, and is less than this. It may be as many as possible, and may be the same four or four vertically or horizontally. Further, the heater built in the crimping head 34 has an ability to melt the bump B of the semiconductor chip C and raise the temperature to a temperature at which the thermosetting adhesive R is cured.

搬送手段４は、仮圧着用架台５２と本圧着用架台５３の双方に跨るレール４０上をＹ方向にスライド可能に設けられ、Ｘ方向にも移動可能なスライドステージ４１と、スライドステージ４１上に設けられ高さ調整可能な上下駆動部４２と、基板Ｗを部分的に保持する保持部４３を構成要素としている。 The transport means 4 is provided on a slide stage 41 that is slidable in the Y direction on a rail 40 that straddles both the temporary crimping stand 52 and the main crimping stand 53 and is also movable in the X direction, and on the slide stage 41. The components are a vertical drive unit 42 that is provided and whose height can be adjusted, and a holding unit 43 that partially holds the substrate W.

搬送手段４は、仮圧着用ステージ２１とバックアップステージ３１が何れも基板Ｗを保持していない状態では、保持部４３が基板Ｗを部分的に保持した状態で、基板Ｗを仮圧着部２と本圧着部３の間で移動させる機能を有している。 In the transport means 4, when neither the temporary crimping stage 21 nor the backup stage 31 holds the substrate W, the holding portion 43 partially holds the substrate W, and the substrate W is combined with the temporary crimping portion 2. It has a function of moving between the main crimping portions 3.

このため、仮圧着ステージ２１が基板Ｗの保持を解除した状態であれば、仮圧着ステージ２１近くに配置された搬送手段４は、保持部４３が基板Ｗを保持した状態で上下駆動部４２を上昇させて、スライドレール４０に沿って基板Ｗを本圧着部３に移動させることが出来る（図３（ａ）から図３（ｂ））。また、基板Ｗが本圧着部３にある場合は、バックアップステージ３１が基板Ｗの保持を解除した後に、上下駆動部４２を上昇させて、スライドレール４０に沿って基板Ｗを仮圧着部２に移動させることも出来る（図３（ｂ）から図３（ａ））。ここで、保持部４３が仮圧着用ステージ２１から基板Ｗを移載するのに際して（および仮圧着用ステージ２１に基板Ｗを移載するのに際して）、仮圧着用ステージ２１の基板保持面（θ方向可動部２１ｃ）は基板Ｗより小さい（少なくともＸ方向長さが短い）ことが望ましい。 Therefore, if the temporary crimping stage 21 is in a state where the holding of the substrate W is released, the transport means 4 arranged near the temporary crimping stage 21 holds the vertical driving unit 42 while the holding portion 43 holds the substrate W. By raising it, the substrate W can be moved to the main crimping portion 3 along the slide rail 40 (FIGS. 3 (a) to 3 (b)). When the substrate W is located in the main crimping portion 3, after the backup stage 31 releases the holding of the substrate W, the vertical drive portion 42 is raised to bring the substrate W to the temporary crimping portion 2 along the slide rail 40. It can also be moved (FIGS. 3 (b) to 3 (a)). Here, when the holding portion 43 transfers the substrate W from the temporary crimping stage 21 (and when the substrate W is transferred to the temporary crimping stage 21), the substrate holding surface (θ) of the temporary crimping stage 21. It is desirable that the directionally movable portion 21c) is smaller than the substrate W (at least the length in the X direction is short).

なお、本実施形態において基板Ｗを角板形状で示しているが、これに限定されるものではなく、半導体ウェハのようにディスク形状のものであってもよい。 Although the substrate W is shown in the shape of a square plate in the present embodiment, the substrate W is not limited to this, and may be in the shape of a disk such as a semiconductor wafer.

ところで、半導体チップＣを仮圧着（および本圧着）する箇所は基板Ｗの中心部に限られるものではなく周辺部に至る。このため、仮圧着用ステージ２１を広い範囲で可動させる必要があるが、この仮圧着用ステージ２１の移動に対して、搬送手段４のスライドステージ４１の移動を同期させることが望ましい。仮圧着用ステージ２１の移動に対して、搬送手段４のスライドステージ４１の移動を同期させることにより、仮圧着用ステージ２１と搬送手段４の干渉を防げるとともに、保持部４３を基板Ｗをバランスよく保持できる箇所に維持することもできる。図４（ａ）は、図３（ａ）に比べて仮圧着部２における基板Ｗの位置が右側に移動した場合に、スライドステージ４１も同期して移動した状態を示すものであり。この状態から、基板Ｗを本圧着部３に移動させた状態を示したのが図４（ｂ）である。 By the way, the portion where the semiconductor chip C is temporarily crimped (and finally crimped) is not limited to the central portion of the substrate W, but extends to the peripheral portion. Therefore, it is necessary to move the temporary crimping stage 21 in a wide range, and it is desirable to synchronize the movement of the slide stage 41 of the transport means 4 with the movement of the temporary crimping stage 21. By synchronizing the movement of the slide stage 41 of the transport means 4 with the movement of the temporary crimping stage 21, interference between the temporary crimping stage 21 and the transporting means 4 can be prevented, and the holding portion 43 has a well-balanced substrate W. It can also be maintained where it can be held. FIG. 4A shows a state in which the slide stage 41 is also moved synchronously when the position of the substrate W in the temporary crimping portion 2 is moved to the right side as compared with FIG. 3A. FIG. 4B shows a state in which the substrate W is moved to the main crimping portion 3 from this state.

図３（ａ）から図３（ｂ）、および図４（ａ）から図４（ｂ）に示すように、仮圧着後の基板Ｗを本圧着部３に、Ｙ方向に沿って直線的に移動させることにより、直前に仮圧着を行なった半導体チップＣａをバックアップステージ３１上（本圧着用ヘッド３４の直下）に配置することも可能である。 As shown in FIGS. 3 (a) to 3 (b) and 4 (a) to 4 (b), the substrate W after temporary crimping is linearly attached to the main crimping portion 3 along the Y direction. By moving the semiconductor chip Ca, which has been temporarily crimped immediately before, can be arranged on the backup stage 31 (directly below the main crimping head 34).

以下、半導体装置の製造装置１の動作例について、基板Ｗ上への半導体チップＣの配置状況を示す図５〜図７を用いて説明する。 Hereinafter, an operation example of the semiconductor device manufacturing apparatus 1 will be described with reference to FIGS. 5 to 7 showing the arrangement state of the semiconductor chip C on the substrate W.

図５（ａ）は基板Ｗを示すものである。図５（ａ）の基板Ｗには升目を示しているが、この升目は半導体チップＣを配置可能な箇所を便宜的に示したものであり、図５（ｂ）以降、図７（ｆ）に至るまで同様である。図５（ａ）の基板Ｗは、まず、仮圧着部２の仮圧着用ステージ２１に配置され、仮圧着用ヘッド２４により、半導体チップＣを1つずつ仮圧着する。 FIG. 5A shows the substrate W. The substrate W in FIG. 5 (a) shows squares, and these squares show the locations where the semiconductor chip C can be arranged for convenience. From FIG. 5 (b) to FIG. 7 (f) It is the same up to. The substrate W of FIG. 5A is first arranged on the temporary crimping stage 21 of the temporary crimping portion 2, and the semiconductor chips C are temporarily crimped one by one by the temporary crimping head 24.

図５（ｂ）は基板Ｗに対する１回目の仮圧着工程が行なわれた後の状態であり、部分的に仮圧着された半導体チップＣａが配置されている。前述のとおり、本圧着用ヘッド３４の加圧面Ａｂは、仮圧着状態の半導体チップＣａを縦横２個ずつ同時に加圧するものであることから、縦横２個ずつの加圧面Ａｂ単位で、半導体チップＣを仮圧着する箇所と、仮圧着しいない箇所に分けている。また、図５（ｂ）では、半導体チップＣを仮圧着した箇所間の間隔を、加圧面Ａｂの１つ分となっているが、基板Ｗの伝熱性が高かったり熱硬化性接着剤Ｒの硬化開始温度が低い場合においては、間隔をさらに広げて、本圧着ヘッド３４の加圧面Ａｂの整数倍（本実施形態においては、縦横４個分、６個分、・・）としてもよい。 FIG. 5B shows a state after the first temporary crimping step is performed on the substrate W, and the partially temporarily crimped semiconductor chip Ca is arranged. As described above, since the pressurizing surface Ab of the main crimping head 34 simultaneously pressurizes two semiconductor chips Ca in the temporarily crimped state in each of the vertical and horizontal directions, the semiconductor chip C is in units of two pressurizing surfaces Ab in each of the vertical and horizontal directions. Is divided into a part that is temporarily crimped and a part that is not temporarily crimped. Further, in FIG. 5B, the distance between the portions where the semiconductor chip C is temporarily crimped is one of the pressure surface Ab, but the substrate W has high heat transfer property or the thermosetting adhesive R. When the curing start temperature is low, the interval may be further widened to be an integral multiple of the pressure surface Ab of the main crimping head 34 (in the present embodiment, 4 pieces, 6 pieces, ...).

図５（ｂ）のように基板Ｗに対する１回目の仮圧着が行なわれた後は、仮圧着用ステージ２１は基板Ｗの保持を解除するとともに、図３（ａ）の状態のように、搬送手段４の保持部４３が基板Ｗを保持し、上下駆動部４２が基板Ｗを仮圧着ステージ２１の基板保持面から浮かせた状態にする。その後、本圧着を行なう（本圧着工程）ために、スライドステージ４１がスライドレール４０上を本圧着部３側に移動する。 After the first temporary crimping to the substrate W is performed as shown in FIG. 5B, the temporary crimping stage 21 releases the holding of the substrate W and is conveyed as shown in FIG. 3A. The holding portion 43 of the means 4 holds the substrate W, and the vertical drive portion 42 keeps the substrate W floating from the substrate holding surface of the temporary crimping stage 21. After that, in order to perform the main crimping (main crimping step), the slide stage 41 moves on the slide rail 40 toward the main crimping portion 3.

その後、スライドステージ４１の位置調整を行い、仮圧着状態の半導体チップＣａが（本圧着用ヘッド３４の加圧される配置単位で）バックアップステージ３１上に配置されるようにする。その後、上下駆動部４２により基板Ｗの下面がバックアップステージ３１上面と密着するまで下げるとともにバックアップステージ３１により基板Ｗを吸着保持し、本圧着用ヘッド３４を下降させて、加圧面Ａｂ内の半導体チップＣａを熱圧着して、熱圧着された半導体チップＣｂとする。なお、この状態においても保持部４３は基板Ｗの保持を維持している。これは、バックアップステージ３１が基板Ｗを吸着保持しても、バックアップステージ３１の保持面積が基板Ｗの一部に限られるため、基板Ｗの安定性を確保する必要があるためである。 After that, the position of the slide stage 41 is adjusted so that the semiconductor chip Ca in the temporarily crimped state is placed on the backup stage 31 (in units of pressure of the main crimping head 34). After that, the vertical drive unit 42 lowers the lower surface of the substrate W until it comes into close contact with the upper surface of the backup stage 31, and the backup stage 31 sucks and holds the substrate W, lowers the main crimping head 34, and lowers the semiconductor chip in the pressure surface Ab. Ca is thermocompression-bonded to obtain a thermocompression-bonded semiconductor chip Cb. Even in this state, the holding unit 43 maintains the holding of the substrate W. This is because even if the backup stage 31 sucks and holds the substrate W, the holding area of the backup stage 31 is limited to a part of the substrate W, so that it is necessary to secure the stability of the substrate W.

それから、本圧着用ヘッド３４を上昇させるとともに、バックアップステージ３１による吸着を解除してから、スライドステージ４１により基板Ｗを移動して、次に熱圧着すべき仮圧着状態の半導体チップＣａをバックアップステージ３１上に配置し、本圧着ヘッド３４により熱圧着する。以後も同様に、スライドステージ４１により基板Ｗの位置を移動させながら、図５（ｂ）のように基板上に仮圧着されている半導体チップＣａを全てを、熱圧着された半導体チップＣｂとする。図５（ｂ）に示す仮圧着状態の半導体チップＣａの全てを本圧着したら、図５（ｃ）のようになる。なお、図５（ｂ）で仮圧着した半導体チップＣａを図５（ｃ）では全て本圧着しているが、仮圧着した半導体チップＣａに何らかの不備があった場合においては、該当する箇所の本圧着を回避することも可能である。 Then, the main crimping head 34 is raised, the suction by the backup stage 31 is released, the substrate W is moved by the slide stage 41, and then the semiconductor chip Ca in the temporary crimping state to be thermocompression bonded is backed up. It is placed on 31 and thermocompression-bonded by the main crimping head 34. After that, similarly, while moving the position of the substrate W by the slide stage 41, all the semiconductor chips Ca temporarily crimped on the substrate as shown in FIG. 5B are designated as thermocompression-bonded semiconductor chips Cb. .. When all of the semiconductor chips Ca in the temporarily crimped state shown in FIG. 5 (b) are fully crimped, the result is as shown in FIG. 5 (c). In addition, although all the semiconductor chips Ca temporarily crimped in FIG. 5 (b) are fully crimped in FIG. 5 (c), if there is any defect in the semiconductor chip Ca temporarily crimped, the book of the corresponding portion is obtained. It is also possible to avoid crimping.

ところで、本圧着用ヘッド３４とバックアップステージ３１の組み合わせは全ての本圧着において共通であることから、基板Ｗ上の位置による熱圧着品質のバラツキを抑えることができる。さらにバックアップステージ３１は架台５に固定され充分な剛性を備えているので、本圧着工程時にステージ面が歪んで位置ズレが生じることも防げる。 By the way, since the combination of the main crimping head 34 and the backup stage 31 is common to all the main crimping, it is possible to suppress the variation in the thermocompression bonding quality depending on the position on the substrate W. Further, since the backup stage 31 is fixed to the gantry 5 and has sufficient rigidity, it is possible to prevent the stage surface from being distorted and misaligned during the main crimping process.

図５（ｃ）のように、１回目の本圧着を行なった後は、バックアップステージ３１による基板Ｗの保持を解除するとともに、搬送手段４の保持部４３が基板Ｗを保持し、上下駆動部４２が基板Ｗをバックアップステージ３１の基板保持面から浮かせた状態にする。その後、スライドステージ４１がスライドレール上を、仮圧着部２側に移動する。その後、基板Ｗを仮圧着用ステージ２１上に配置してから、上下駆動部４２を下降させるとともに保持部４３による基板Ｗの保持を解除し、仮圧着用ステージ２１が基板Ｗを保持する。 As shown in FIG. 5C, after the first main crimping is performed, the holding of the substrate W by the backup stage 31 is released, and the holding portion 43 of the transport means 4 holds the substrate W, and the vertical drive portion 42 keeps the substrate W floating from the substrate holding surface of the backup stage 31. After that, the slide stage 41 moves on the slide rail toward the temporary crimping portion 2. After that, after the substrate W is arranged on the temporary crimping stage 21, the vertical drive unit 42 is lowered and the holding portion 43 releases the holding of the substrate W, and the temporary crimping stage 21 holds the substrate W.

それから、仮圧着ステージ２１を移動させながら、半導体チップＣが配置されていない所定箇所に、仮圧着用ヘッド２４が半導体チップＣを１つずつ仮圧着する（２回目の仮圧着）。ここで、１回目の仮圧着と同様に、縦横２個ずつの単位で、半導体チップＣを仮圧着するする箇所と、仮圧着しいない箇所に分けている。図６（ｄ）は、基板Ｗに２回目の仮圧着を行なった後の状態を例示したものである。 Then, while moving the temporary crimping stage 21, the temporary crimping head 24 temporarily crimps the semiconductor chips C one by one to a predetermined position where the semiconductor chip C is not arranged (second temporary crimping). Here, as in the first temporary crimping, the semiconductor chip C is divided into a portion where the semiconductor chip C is temporarily crimped and a portion where the semiconductor chip C is not temporarily crimped in units of two each in the vertical and horizontal directions. FIG. 6D exemplifies the state after the second temporary crimping is performed on the substrate W.

図６（ｄ）の状態の基板Ｗは、図５（ｂ）から図５（ｃ）と同様にバックアップステージ３１上に配置され、本圧着が行なわれる。ここで、２回目の仮圧着を行なった半導体チップＣａに隣接して熱圧着された半導体チップＣｂが存在するが、熱圧着された半導体チップＣｂの熱硬化性接着剤Ｒは既に硬化しているので、本圧着ヘッド３４による加熱で熱的な悪影響を受けることはない。２回目の本圧着後の基板Ｗを例示したものが図６（ｅ）である。 The substrate W in the state of FIG. 6 (d) is arranged on the backup stage 31 in the same manner as in FIGS. 5 (b) to 5 (c), and the main crimping is performed. Here, there is a thermocompression-bonded semiconductor chip Cb adjacent to the semiconductor chip Ca that has been thermocompression-bonded for the second time, but the thermosetting adhesive R of the thermocompression-bonded semiconductor chip Cb has already been cured. Therefore, the heating by the main crimping head 34 does not have a thermal adverse effect. FIG. 6 (e) illustrates the substrate W after the second main crimping.

以後、前述のような動作により、３回目の仮圧着（図６（ｆ））、３回目の本圧着（図７（ｇ））、４回目の仮圧着（図７（ｈ））、４回目の本圧着（図７（ｉ））により基板Ｗ全面への半導体チップＣの加熱圧着は完了する。 After that, by the operation as described above, the third temporary crimping (FIG. 6 (f)), the third main crimping (FIG. 7 (g)), the fourth temporary crimping (FIG. 7 (h)), and the fourth. The heat crimping of the semiconductor chip C to the entire surface of the substrate W is completed by the main crimping (FIG. 7 (i)).

以上のプロセスにより、本圧着工程において、仮圧着状態の半導体チップＣａが隣接して存在することがない。すなわち、未硬化の熱硬化性接着剤Ｒが本圧着工程前に硬化することが防げ、高品質な本圧着工程を効率よく行なうことが出来る。 By the above process, the semiconductor chips Ca in the temporarily crimped state do not exist adjacent to each other in the main crimping step. That is, it is possible to prevent the uncured thermosetting adhesive R from being cured before the main crimping step, and it is possible to efficiently perform the high quality main crimping step.

本実施形態においては、仮圧着工程と本圧着工程を４回繰り返して基板Ｗ全面への熱圧着が完了したが、これに限定されるものではない。基板Ｗ上への半導体チップＣの配列形態、本圧着ヘッド３４の加圧面Ａｂの形状（同時に加圧する半導体チップの数、配列）、基板Ｗの熱伝導度、等に応じて最適な回数を選択すればよい。 In the present embodiment, the temporary crimping step and the main crimping step are repeated four times to complete the thermocompression bonding to the entire surface of the substrate W, but the present invention is not limited to this. The optimum number of times is selected according to the arrangement form of the semiconductor chips C on the substrate W, the shape of the pressure surface Ab of the crimping head 34 (the number and arrangement of the semiconductor chips to be pressurized at the same time), the thermal conductivity of the substrate W, and the like. do it.

なお、本圧着工程において、基板Ｗの外側に配置された仮圧着状態の半導体チップＣａを本圧着する際に、バックアップステージ３１に保持部４３が干渉する場合もある。このような場合においては、保持部４３による基板Ｗの把持位置を変更するように搬送手段を制御すればよい。 In the main crimping step, the holding portion 43 may interfere with the backup stage 31 when the semiconductor chip Ca in the temporarily crimped state arranged on the outside of the substrate W is mainly crimped. In such a case, the transport means may be controlled so as to change the gripping position of the substrate W by the holding portion 43.

例えば、図８は保持部４３がフォーク形状になっているものの、バックアップステージ３１と保持部４３の干渉なしに、仮圧着状態の半導体チップＣａ全てを本圧着出来るように保持することは困難（図８（ａ））であるが、図８（ｂ）や図８（ｃ）のように保持部４３の位置を変えることで、バックアップステージ３１との干渉を避けることが出来る。なお、保持部４３の位置を変更する際は、２つの保持部４３の何れか一方とバックアップステージ３１により基板Ｗを吸着保持した状態で、他方の保持部４３による基板Ｗの吸着を解除した後に移動させればよい。 For example, although the holding portion 43 has a fork shape in FIG. 8, it is difficult to hold all the semiconductor chips Ca in the temporarily crimped state so that they can be main crimped without interference between the backup stage 31 and the holding portion 43 (FIG. 8). Although it is 8 (a)), interference with the backup stage 31 can be avoided by changing the position of the holding portion 43 as shown in FIGS. 8 (b) and 8 (c). When changing the position of the holding portion 43, after the substrate W is sucked and held by one of the two holding portions 43 and the backup stage 31, the suction of the substrate W by the other holding portion 43 is released. You can move it.

また、本発明の別の実施形態として、図９（ａ）のように搬送手段４ａと搬送手段４ｂという２セットの搬送手段４を備えた装置も可能である。搬送手段４が２セットある場合、仮圧着部２と本圧着部３それぞれに基板Ｗを配置して同時処理することが可能であるとともに、一方の基板Ｗを仮圧着部２から本圧着部３に移動させると同時に他方の基板Ｗを本圧着部３から仮圧着部２に移動させることも可能なので、仮圧着部２および本圧着部３の待機時間が短縮できて生産性の向上が図れる。なお、仮圧着部２と本圧着部３の間での基板Ｗの入れ替えを相互に同時に行なうためには、それぞれの基板Ｗの干渉を回避することが必要である。そのための構成を図９（ｂ）に示す。図９（ｂ）は図９（ａ）をＹ方向から見た図であるが、各セットで保持部４３の高さを変えて、干渉を回避する構成を示している。 Further, as another embodiment of the present invention, as shown in FIG. 9A, an apparatus including two sets of transport means 4 of a transport means 4a and a transport means 4b is also possible. When there are two sets of transport means 4, the substrate W can be arranged in each of the temporary crimping portion 2 and the main crimping portion 3 for simultaneous processing, and one of the substrates W can be processed from the temporary crimping portion 2 to the main crimping portion 3 at the same time. At the same time, the other substrate W can be moved from the main crimping portion 3 to the temporary crimping portion 2, so that the waiting time of the temporary crimping portion 2 and the main crimping portion 3 can be shortened and the productivity can be improved. In order to replace the substrates W between the temporary crimping portion 2 and the main crimping portion 3 at the same time, it is necessary to avoid interference between the respective substrates W. The configuration for that purpose is shown in FIG. 9 (b). FIG. 9B is a view of FIG. 9A viewed from the Y direction, and shows a configuration in which the height of the holding portion 43 is changed in each set to avoid interference.

ところで、基板Ｗが小さい場合などでは、図１０（ａ）のように、１つの保持部４３が基板Ｗの複数辺部を保持する構成であってもよい。このような保持部４３を有する搬送手段４であれば、図４（ｂ）のように搬送手段４ａ、のように２つの搬送手段４を備えることも容易である。 By the way, when the substrate W is small or the like, as shown in FIG. 10A, one holding portion 43 may be configured to hold a plurality of side portions of the substrate W. If the transport means 4 has such a holding portion 43, it is easy to include two transport means 4 as in the transport means 4a as shown in FIG. 4B.

これまでの説明において、半導体チップＣと基板Ｗの接続に熱硬化性接着剤Ｒが付与されていることを前提に説明したが、本発明は硬化性接着剤Ｒが付与されず基板Ｗ上に半導体チップＣが仮圧着されている場合においても有効である。すなわち、本圧着工程において、本圧着を行なう領域に隣接して態の半導体チップＣａが存在した場合、本圧着ヘッドの熱は隣接する半導体チップＣａのバンプを軟化・変形させる懸念があるが、本発明では、このような懸念も払拭することが出来る。 Although the description so far has been made on the premise that the thermosetting adhesive R is applied to the connection between the semiconductor chip C and the substrate W, the present invention is not provided with the curable adhesive R and is placed on the substrate W. It is also effective when the semiconductor chip C is temporarily crimped. That is, in the main crimping process, when the semiconductor chip Ca in the state adjacent to the region where the main crimping is performed is present, the heat of the main crimping head may soften or deform the bumps of the adjacent semiconductor chip Ca. In the invention, such concerns can be dispelled.

また、本発明は貫通電極を有する半導体チップを積層する所謂三次元実装にも適用することが可能である。すなわち、半導体チップＣとして貫通電極等により上部（非バンプ面）に電極を有するものを用いる場合、図７（ｉ）のように１層目の半導体チップＣを熱圧着した状態を、図５（ａ）と同様に扱って、仮圧着と本圧着を繰り返し実施すれば、三次元実装においても隣接チップへの熱影響を防ぐことができる。 The present invention can also be applied to so-called three-dimensional mounting in which semiconductor chips having through electrodes are laminated. That is, when a semiconductor chip C having an electrode on the upper portion (non-bump surface) such as a through electrode is used, the state in which the first layer semiconductor chip C is thermocompression bonded as shown in FIG. 7 (i) is shown in FIG. If the temporary crimping and the main crimping are repeatedly performed in the same manner as in a), the thermal influence on the adjacent chips can be prevented even in the three-dimensional mounting.

１ 半導体装置の製造装置
２ 仮圧着部
３ 本圧着部
４ 搬送手段
５ 架台
２１ 仮圧着用ステージ
２２ 仮圧着用支持フレーム
２３ 仮圧着用ユニット
２４ 仮圧着用ヘッド
３１ バックアップステージ
３２ 本圧着用支持フレーム
３３ 本圧着用ユニット
３４ 本圧着用ヘッド
４０ スライドレール
４１ スライドステージ
４２ 上下駆動部
４３ 保持部
Ｃ 半導体チップ
Ｃａ 仮圧着状態の半導体チップ
Ｃｂ 熱圧着された半導体チップ
Ｒ 熱硬化性接着剤
Ｗ 基板 1 Semiconductor device manufacturing equipment 2 Temporary crimping part
3 Crimping part 4 Conveying means 5 Stand 21 Temporary crimping stage 22 Temporary crimping support frame 23 Temporary crimping unit 24 Temporary crimping head 31 Backup stage 32 Crimping support frame 33 Crimping unit 34 Crimping head 40 Slide rail 41 Slide stage 42 Vertical drive unit 43 Holding unit C Semiconductor chip Ca Semiconductor chip in temporary crimping state Cb Thermocompression bonding semiconductor chip
R Thermosetting Adhesive W Substrate

Claims (13)

半導体チップに形成されたバンプと基板上に形成されたパッド電極とを電気的に接続するとともに、前記半導体チップを前記基板上に固定する、半導体装置の製造装置であって、
前記半導体チップを保持する仮圧着用ヘッドと、前記基板を保持する仮圧着用ステージとを有し、前記半導体チップを前記基板上の所定位置に仮圧着する仮圧着部と、
前記基板上に仮圧着された半導体チップを複数個同時に熱圧着する本圧着用ヘッドと、前記本圧着用ヘッドが熱圧着する範囲を前記基板の裏面から支持するよう前記本圧着用ヘッドに対向するよう固定配置されたバックアップステージとを有し、前記半導体チップに形成されたバンプを溶融して基板上に形成されたパッド電極に電気的に接続するとともに、前記半導体チップを前記基板上に固定する本圧着部と、
前記基板を部分的に保持する保持部を有し、前記基板を、前記仮圧着部から前記本圧着部に移動する機能と、前記本圧着部から前記仮圧着部に移動する機能を有する搬送手段とを備え、
前記仮圧着部では、前記本圧着部で熱圧着を行う加圧面単位で、仮圧着を行なう箇所と、仮圧着を行なわない箇所とを設ける、半導体装置の製造装置。 A semiconductor device manufacturing device that electrically connects a bump formed on a semiconductor chip and a pad electrode formed on a substrate and fixes the semiconductor chip on the substrate.
A temporary crimping portion that has a temporary crimping head that holds the semiconductor chip and a temporary crimping stage that holds the substrate, and temporarily crimps the semiconductor chip to a predetermined position on the substrate.
Facing the pressure bonding head so as to support the main compression bonding head to multiple simultaneous thermocompression bonding temporary pressure bonding semiconductor chips on the substrate, the scope of the present crimping head thermocompression bonding from the rear surface of the substrate a fixing arranged backup stage as said with to melt the bumps formed on the semiconductor chip is electrically connected to a pad electrode formed on a substrate, wherein the semiconductor body Chi-up substrate This crimping part to be fixed on the top and
A transport means having a holding portion for partially holding the substrate, and having a function of moving the substrate from the temporary crimping portion to the main crimping portion and a function of moving the substrate from the main crimping portion to the temporary crimping portion. equipped with a door,
The temporary crimping portion is a semiconductor device manufacturing apparatus provided with a portion for temporary crimping and a portion for which temporary crimping is not performed for each pressure surface to be thermocompression bonded at the main crimping portion . 半導体チップに形成されたバンプと基板上に形成されたパッド電極とを電気的に接続するとともに、前記半導体チップを前記基板上に固定する、半導体装置の製造装置であって、
前記半導体チップを保持する仮圧着用ヘッドと、前記基板を保持して面内方向に移動可能な仮圧着用ステージとを有し、前記半導体チップを前記基板上の所定位置に仮圧着する仮圧着部と、
前記基板上に仮圧着された半導体チップを複数個同時に熱圧着する本圧着用ヘッドと、前記本圧着用ヘッドが熱圧着する範囲を前記基板の裏面から支持するよう前記本圧着用ヘッドに対向するよう固定配置されたバックアップステージとを有し、前記半導体チップに形成されたバンプを溶融して基板上に形成されたパッド電極に電気的に接続するとともに、前記半導体チップを前記基板上に固定する本圧着部と、
前記基板を部分的に保持する保持部を有し、前記仮圧着用ステージとバックアップステージの何れもが保持していない状態の前記基板を、前記仮圧着部から前記本圧着部に移動する機能と、前記本圧着部から前記仮圧着部に移動する機能を有する搬送手段とを備えた半導体装置の製造装置。 A semiconductor device manufacturing device that electrically connects a bump formed on a semiconductor chip and a pad electrode formed on a substrate and fixes the semiconductor chip on the substrate.
Temporary crimping that has a temporary crimping head that holds the semiconductor chip and a temporary crimping stage that holds the substrate and can move in the in-plane direction, and temporarily crimps the semiconductor chip to a predetermined position on the substrate. Department and
The main crimping head for simultaneously thermocompression-bonding a plurality of semiconductor chips temporarily crimped on the substrate and the main crimping head facing the main crimping head so as to support the range of the thermocompression bonding from the back surface of the substrate. It has a backup stage fixedly arranged so as to be formed, and the bumps formed on the semiconductor chip are melted and electrically connected to the pad electrodes formed on the substrate, and the semiconductor chip is fixed on the substrate. This crimping part and
A function of moving the substrate, which has a holding portion for partially holding the substrate and is not held by either the temporary crimping stage or the backup stage, from the temporary crimping portion to the main crimping portion. , A semiconductor device manufacturing apparatus including a transport means having a function of moving from the main crimping portion to the temporary crimping portion . 請求項１または請求項２に記載の半導体装置の製造装置であって、
前記半導体チップの接続に熱硬化性接着剤が付与されたものであったとき、
前記仮圧着用ヘッドは前記熱硬化性接着剤を硬化開始温度より低い温度に加熱する機能を有し、
前記本圧着用ヘッドは前記熱硬化性接着剤を硬化させる温度まで加熱する機能を有する、半導体装置の製造装置。 The semiconductor device manufacturing apparatus according to claim 1 or 2 .
When a thermosetting adhesive is applied to the connection of the semiconductor chip,
The temporary crimping head has a function of heating the thermosetting adhesive to a temperature lower than the curing start temperature.
The main crimping head is a semiconductor device manufacturing apparatus having a function of heating the thermosetting adhesive to a temperature at which it is cured. 請求項１から請求項３の何れかに記載の半導体装置の製造装置であって、
前記バックアップステージが前記基板を支持する面が、前記基板よりも小さく、前記本圧着用ヘッドに対応した形状を有する半導体装置の製造装置。 The semiconductor device manufacturing apparatus according to any one of claims 1 to 3.
A semiconductor device manufacturing apparatus having a surface on which the backup stage supports the substrate is smaller than the substrate and has a shape corresponding to the main crimping head. 請求項１から請求項４の何れかに記載の半導体装置の製造装置であって、
前記仮圧着部から前記本圧着部まで前記基板を移動する前記搬送手段の前記保持部が、前記本圧着部においても前記基板を保持する半導体装置の製造装置。 The semiconductor device manufacturing apparatus according to any one of claims 1 to 4.
A semiconductor device manufacturing apparatus in which the holding portion of the transport means for moving the substrate from the temporary crimping portion to the main crimping portion also holds the substrate in the main crimping portion. 請求項１から請求項５の何れかに記載の半導体装置の製造装置であって、
前記搬送手段を複数有する半導体装置の製造装置。 The semiconductor device manufacturing apparatus according to any one of claims 1 to 5.
A semiconductor device manufacturing device having a plurality of the transport means. 請求項１から請求項６の何れかに記載の半導体装置の製造装置であって、
前記仮圧着用ステージの前記基板を保持する面が前記基板より小さい半導体装置の製造装置。 The semiconductor device manufacturing apparatus according to any one of claims 1 to 6.
A device for manufacturing a semiconductor device in which the surface of the temporary crimping stage that holds the substrate is smaller than that of the substrate. 半導体チップを基板上の所定位置に仮圧着する仮圧着工程と、
前記基板に仮圧着された前記半導体チップを熱圧着する本圧着工程とを備え、
前記仮圧着工程では、前記熱圧着を行う加圧面単位で、仮圧着を行なう箇所と、仮圧着を行なわない箇所とを設定し、
前記本圧着工程では、前記熱圧着を行う加圧面を支持する形状のバックアップステージを用いる半導体装置の製造方法。 A temporary crimping process in which a semiconductor chip is temporarily crimped to a predetermined position on a substrate,
It is provided with a main crimping step of thermocompression-bonding the semiconductor chip temporarily crimped to the substrate.
In the temporary crimping step, a place where the temporary crimping is performed and a place where the temporary crimping is not performed are set for each pressure surface to be thermocompression bonded.
In the main crimping step, a method for manufacturing a semiconductor device using a backup stage having a shape that supports a pressure-bonded surface to be thermocompression-bonded. 請求項８に記載の半導体装置の製造方法であって、
前記本圧着工程において、前記加圧面が複数の半導体チップを同時に加圧する形状である半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 8.
A method for manufacturing a semiconductor device in which the pressurizing surface simultaneously pressurizes a plurality of semiconductor chips in the main crimping step. 請求項８または請求項９に記載の半導体装置の製造方法であって、
前記仮圧着工程において、前記加圧面１つ分の仮圧着を行なう箇所同士が、
前記加圧面の整数倍だけ間隔を空けるよう配置される半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 8 or 9.
In the temporary crimping step, the locations where the temporary crimping for one pressure surface is performed are
A method for manufacturing a semiconductor device, which is arranged so as to be spaced by an integral multiple of the pressurized surface. 請求項８から請求項１０のいずれかにに記載の半導体装置の製造方法であって、
前記半導体チップの接続に熱硬化性接着剤が付与されたものであったとき、
前記仮圧着工程では前記熱硬化性接着剤を硬化開始温度より低い温度に加熱し、
前記本圧着工程では前記熱硬化性接着剤を硬化させる温度まで加熱する、半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 8 to 10.
When a thermosetting adhesive is applied to the connection of the semiconductor chip,
In the temporary crimping step, the thermosetting adhesive is heated to a temperature lower than the curing start temperature.
A method for manufacturing a semiconductor device, in which the thermosetting adhesive is heated to a temperature at which it is cured in the main crimping step. 請求項８から請求項１１のいずれかに記載の半導体装置の製造方法であって、
前記本圧着工程で前記基板に仮圧着された前記半導体チップを熱圧着した後に、
前記基板に前記半導体チップを仮圧着すべき箇所が残されている場合、
前記本圧着工程後の前記基板を前記仮圧着工程に戻す半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 8 to 11.
After the semiconductor chip temporarily crimped to the substrate in the main crimping step is thermocompression-bonded,
When a portion for temporarily crimping the semiconductor chip is left on the substrate,
A method for manufacturing a semiconductor device for returning the substrate after the main crimping step to the temporary crimping step. 請求項１２に記載の半導体装置の製造方法であって、
前記本圧着工程を行っていると同時に、別の基板に仮圧着工程を行なう半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 12.
A method for manufacturing a semiconductor device in which a temporary crimping process is performed on another substrate at the same time as the main crimping process is performed.
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