JP6773465B2 - Chemical mechanical polishing pad composite polishing layer formulation - Google Patents

Description

The present invention relates to a chemical mechanical polishing pad. More specifically, the present invention includes a polishing layer having a polished surface, and the polishing layer includes a first continuous non-volatile polymer phase and a second non-volatile polymer phase, and the first continuous non-volatile polymer phase. Has a plurality of periodic recesses, the plurality of periodic recesses are filled with a second non-volatile polymer phase, the first continuous non-volatile polymer phase has a continuous bubble pore ratio of ≤6% by volume, and the first The present invention relates to a chemical mechanical polishing pad in which the non-volatile polymer phase of 2 has an open cell pore ratio of ≧ 10% by volume and the polishing surface is adapted to polish the substrate.

In the fabrication of integrated circuits and other electronic devices, multiple layers of conductors, semiconductors and insulators are attached to or removed from the surface of a semiconductor wafer. Thin layers of conductors, semiconductors and insulators can be adhered using several adhesion techniques. Common adhesion techniques in the latest wafer processing include, among others, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and electrochemical plating, also known as sputtering. Common removal techniques include wet and dry isotropic and anisotropic etchings, among others.

The top surface of the wafer becomes non-flat as the material layers are sequentially attached and removed. Subsequent semiconductor processing (eg, metallization) requires the wafer to have a flat surface, so the wafer must be flattened. Flattening is useful for removing unwanted surface topography and surface imperfections such as rough surfaces, agglomerated materials, crystal lattice damage, scratches and contaminated layers or materials.

Chemical mechanical planning or chemical mechanical polishing (CMP) is a common technique used to flatten or polish workpieces such as semiconductor wafers. In conventional CMP, a wafer carrier, or polishing head, is attached to the carrier assembly. The polishing head holds the wafer and places the wafer in contact with the polishing layer of the polishing pad mounted on the table or platen in the CMP apparatus. The carrier assembly provides a controllable pressure between the wafer and the polishing pad. At the same time, the polishing medium (eg slurry) is dispensed onto the polishing pad and drawn into the gap between the wafer and the polishing layer. To perform polishing, the polishing pads and wafers generally rotate relative to each other. As the polishing pad rotates under the wafer, the wafer generally sweeps out an annular polishing track, or polishing area, in which the surface of the wafer directly faces the polishing layer. The wafer surface is polished and flattened by the chemical and mechanical action of the polishing layer and the polishing medium on the surface.

In US Pat. No. 6,736,709, James et al. Disclose the importance of grooving the polished surface of a chemical mechanical polishing pad. Specifically, James et al. Estimated the effect of groove formation on pad stiffness by the "groove stiffness coefficient" ("GSQ"), and groove formation on the (pad interface) fluid flow by the "groove flow coefficient" ("GFQ"). Estimates the effect of and teaches that there is a fine balance between GSQ and GFQ in selecting the ideal polishing surface for a given polishing process.

Nevertheless, as wafer dimensions continue to shrink, the need for associated polishing processes becomes increasingly acute.

Therefore, there is a constant need for a polishing layer design that expands the operating performance range of the chemical mechanical polishing pad.

The present invention includes a polishing layer having an average thickness of T _P-avg measured from the base surface to the polishing surface perpendicular to the polishing surface, the base surface and the polishing surface, and the polishing layer is the first continuous non-volatile material. The average recess depth from the polished surface, including the polymer phase and the second non-volatile polymer phase, where the first continuous non-volatile polymer phase is measured from the polished surface to the base surface perpendicular to the polished surface. a plurality of periodic recess having a D _avg, average recess depth D _avg is less than the average thickness T _P-avg, multiple periodicity recess filled by the second non-volatile polymer phase, first The continuous non-volatile polymer phase of is a reaction product of a first continuous phase terminal isocyanate modified urethane prepolymer having an unreacted NCO group of 8 to 12% by weight and a first continuous phase curing agent, and is a second. The non-volatile polymer phase is selected from a second continuous non-volatile polymer phase and a second discontinuous non-volatile polymer phase, and the second non-volatile polymer phase is a poly side (P) liquid component and an isocyanate side (I) liquid. Formed by combining the components, the poly-side (P) liquid component contains at least one of (P) -side polyols, (P) -side polyamines and (P) -side alcohol amines, and is an isocyanate-side (I). ) The liquid component contains at least one (I) side polyfunctional isocyanate, the first continuous non-volatile polymer phase has an open cell pore ratio of ≤6% by volume, and the second non-volatile polymer phase has ≥10. Provided is a chemical mechanical polishing pad having an open cell pore ratio of% by volume and having a polished surface suitable for polishing a substrate.

The present invention provides a step of providing a base material selected from at least one of a magnetic base material, an optical base material, and a semiconductor base material, a step of providing a chemical mechanical polishing pad of the present invention, a polishing surface and a base material of a polishing layer. Provided is a method for polishing a base material, which comprises a step of polishing the surface of the base material by causing dynamic contact with the base material and a step of conditioning the polished surface with an abrasive grain conditioner.

It is a perspective view of the polishing layer of this invention. It is a top view of the chemical mechanical polishing pad of this invention. It is sectional drawing of the chemical mechanical polishing pad of this invention as seen from the line AA of FIG. It is a top view of the chemical mechanical polishing pad of this invention. It is a top view of the chemical mechanical polishing pad of this invention. It is a top view of the chemical mechanical polishing pad of this invention. It is sectional drawing of the chemical mechanical polishing pad of this invention as seen from the line BB of FIG. It is a top view of the chemical mechanical polishing pad of this invention. It is a top view of the chemical mechanical polishing pad of this invention. It is a top view of the polishing layer of this invention. It is sectional drawing of the polishing layer of this invention as seen from the CC line of FIG. It is a perspective view of the polishing layer of this invention provided with a window. It is a top view of the chemical mechanical polishing pad of this invention. It is a top view of the polishing layer of this invention. It is sectional drawing of the polishing layer of this invention as seen from the AA-AA line of FIG.

Detailed Description In the past, GSQ and GFQ values for the polished surface of a given abrasive layer provided an operable range for designing an effective abrasive layer. Surprisingly, the present invention provides a means for breaking the previously established GSQ and GFQ parameter types with respect to the abrasive layer by separating the abrasive layer stiffness of the abrasive layer design from the slurry distribution performance. As a result, the scope of polishing layer design is expanded to a balance of polishing performance characteristics that has not been obtained so far.

As used in the specification and claims with reference to a polymer phase, "nonvolatile" is another polymer in which a polymer phase (eg, a second continuous non-volatile polymer phase) is present in the polishing layer. It means that it does not selectively melt, dissolve, decompose or otherwise disappear with respect to the phase (eg, the first continuous non-volatile polymer phase).

In the specification and claims, the "average total thickness _TT-avg " used with reference to the chemical mechanical polishing pad (10) having the polished surface (14) is the polished surface (14). It refers to the average thickness T _T of the the chemical mechanical polishing pad measured to the bottom surface (27) of the subpad (25) from the polishing surface (14) perpendicular to (see Figure 3 and 7).

The "substantially circular cross section" used with reference to the polishing layer (20) in the specification and claims is the polished surface (14) from the central axis (12) to the polishing layer (20). The longest radius r of the cross section to the outer circumference (15) of the above is only ≤20% longer than the shortest radius r of the cross section from the central axis (12) to the outer circumference (15) of the polished surface (14) (FIG. See 1).

The chemical mechanical polishing pad (10) of the present invention is preferably adapted to rotate about a central axis (12) (see FIG. 1). Preferably, the polishing surface (14) of the polishing layer (20) is in a plane (28) perpendicular to the central axis (12). The chemical mechanical polishing pad (10) optionally rotates in a plane (28) at an angle γ of 85-95 ° with respect to the central axis (12), preferably 90 ° with respect to the central axis (12). It is adapted as. Preferably, the polishing layer (20) has a polishing surface (14) having a substantially circular cross section perpendicular to the central axis (12). Preferably, the radius r of the cross section of the polished surface (14) perpendicular to the central axis (12) changes by only ≦ 20%, more preferably ≦ 10% with respect to the cross section.

As used in the specification and claims, "polishing medium" includes particle-containing polishing solutions and non-particle-containing polishing solutions, such as abrasive-free and reaction solution polishing solutions.

As used in the specification and claims, "chemical bond" refers to the attractive force between atoms and includes covalent bonds, ionic bonds, metal bonds, hydrogen bonds and van der Waals forces.

As used in the specification and claims, "poly (urethane)" is a polyurethane formed from the reaction of (a) (i) isocyanates and (ii) polyols (including diamines). , And (b) (i) isocyanates and (ii) polyols (including diols) and (iii) water, amines (including diamines and polyamines) or water and amines (diamines and polyamines). Includes poly (urethane) formed by reaction with a mixture with (including class).

Preferably, the chemical mechanical polishing pad (10) of the present invention is specifically designed to facilitate polishing of a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. .. More preferably, the chemical mechanical polishing pad (10) of the present invention is particularly designed to facilitate polishing of semiconductor substrates. Most preferably, the chemical mechanical polishing pad (10) of the present invention is particularly designed to facilitate polishing of a semiconductor base material, and the semiconductor base material is a semiconductor wafer.

Preferably, the chemical mechanical polishing pad (10) of the present invention extends from the base surface (17) to the polishing surface (14) perpendicularly to the polishing surface (14), the base surface (17) and the polishing surface (14). A polishing layer (20) having a measured average thickness of T _P-avg is included, and the polishing layer (20) includes a first continuous non-volatile polymer phase (30) and a second non-volatile polymer phase (50). The first continuous non-volatile polymer phase (30) is measured from the polished surface (14) to the base surface (17) perpendicularly to the polished surface (14), and is an average from the polished surface (14). a plurality of periodic recess having a recess depth D _avg (40), an average concave depth D _avg is less than the average thickness T _P-avg (preferably _{D avg ≦ 0.5 * T P-} avg , More preferably D _avg ≤ 0.4 * T _P-avg , most preferably D _avg ≤ 0.375 * T _P-avg ), and the plurality of periodic recesses (40) are the second non-volatile polymer phase (50). ), And the first continuous non-volatile polymer phase (30) is composed of a first continuous phase terminal isocyanate-modified urethane prepolymer having an unreacted NCO group of 8 to 12% by weight and a first continuous phase curing agent. The second non-volatile polymer phase (50) is selected from the second continuous non-volatile polymer phase and the second discontinuous non-volatile polymer phase, and is the second non-volatile polymer phase (50). Is formed by combining the poly side (P) liquid component and the iso side (I) liquid component, and the poly side (P) liquid component is the (P) side polyols, the (P) side polyamines and (P). ) Side alcohol amines, the iso-side (I) liquid component contains at least one (I) -side polyfunctional isocyanate, and optionally the first continuous non-volatile polymer phase (30) A plurality of hollow core polymer materials are included, the plurality of hollow core polymer materials are blended in the first continuous non-volatile polymer phase (30) in an amount of 0 to 58% by volume, and the first continuous non-volatile polymer phase (30) is ≦ It has an open cell pore ratio of 6% by volume (preferably ≤5% by volume, more preferably ≤4% by volume, most preferably ≤3% by volume), and the second non-volatile polymer phase (50) has ≥10 by volume. Has an open cell pore ratio of% (preferably 25-75% by volume, more preferably 30-60% by volume, most preferably 45-55% by volume), and the polished surface is suitable for polishing the substrate. (Figs. 1 to 15).

Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is the first continuous with 8-12 wt% unreacted NCO groups. It contains a reaction product of a phase-terminated isocyanate-modified urethane prepolymer and a first continuous phase curing agent. More preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention has an unreacted NCO group of 8.75 to 12% by weight. It contains the reaction product of 1 continuous phase terminal isocyanate modified urethane prepolymer and 1 continuous phase curing agent. More preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention contains 9.0 to 9.25% by weight of unreacted NCO groups. It contains a reaction product of a first continuous phase terminal isocyanate-modified urethane prepolymer having a first continuous phase curing agent.

Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is the first continuous with 8-12 wt% unreacted NCO groups. It is a reaction product of a phase-terminal isocyanate-modified urethane prepolymer and a first continuous phase curing agent, and the first continuous phase-terminal isocyanate-modified urethane prepolymer is a first continuous phase polyisocyanate (preferably diisocyanate). And the first continuous phase polyols obtained from the interaction with the first continuous phase polyols, the first continuous phase polyols are selected from the group consisting of diols, polyols, polyoldiols, copolymers thereof and mixtures thereof. Preferably, the first continuous phase polyols are polytetramethylene ether glycol (PTMEG), a blend of PTMEG and polypropylene ether glycol (PPG), and low molecular weight diols (eg 1,2-butanediol, 1,3). -Butandiol, 1,4-butanediol) is selected from the group consisting of their mixtures.

Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is the first continuous with 8-12 wt% unreacted NCO groups. It is a reaction product of a phase-terminal isocyanate-modified urethane prepolymer and a first continuous phase curing agent, and the first continuous phase curing agent is a first continuous phase polyamine. Preferably, the first continuous phase polyamines are aromatic polyamines. More preferably, the first continuous phase polyamines are 4,4'-methylene-bis-o-chloroaniline (MbOCA), 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline). ) (MCDEA), dimethylthiotoluene diamine, trimethylene glycol di-p-aminobenzoate, polytetramethylene oxide di-p-aminobenzoate, polytetramethylene oxide mono-p-aminobenzoate, polypropylene oxide di-p-aminobenzoate , Polypropylene oxide mono-p-aminobenzoate, 1,2-bis (2-aminophenylthio) ethane, 4,4'-methylene-bis-aniline, diethyltoluene diamine, 5-tert-butyl-2,4-toluene Diamine, 3-tert-butyl-2,6-toluenediamine, 5-tert-amyl-2,4-toluenediamine, 3-tert-amyl-2,6-toluenediamine, 5-tert-amyl-2,4 It is an aromatic polyamine selected from the group consisting of −chlorotoluenediamine and 3-tert-amyl-2,6-chlorotoluenediamine. Most preferably, the first continuous phase polyamines are 4,4'-methylene-bis-o-chloroaniline (MbOCA).

Examples of commercially available PTMEG-based terminal isocyanate-modified urethane prepolymers are commercially available from Imutane® prepolymers (COIM USA, Inc., for example PET-80A, PET-85A, PET-90A, PET-93A. , PET-95A, PET-60D, PET-70D, PET-75D), Adiprene® Prepolymer (commercially available from Chemtura, eg LF800A, LF900A, LF910A, LF930A, LF931A, LF939A, LF950A, LF952A, LF600D, LF601D, LF650D, LF667, LF700D, LF750D, LF751D, LF752D, LF753D and L325), Andur® Prepolymers (commercially available from Anderson Development Company, eg 70APLF, 80APLF, 85APLF, 90APLF, 95APLF, 60DPLF , 70APLF, 75APLF).

Preferably, the first continuous phase terminal isocyanate-modified urethane prepolymer used in the method of the present invention is terminal-modified with a low free isocyanate having a free toluene diisocyanate (TDI) monomer content of less than 0.1% by weight. It is a urethane prepolymer.

Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is provided in both a porous structure and a non-porous (ie, unfilled) structure. Can be. Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention has a specific gravity of ≧ 0.5 as measured according to ASTM D1622. More preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is 0.5 to 1.2 (30) as measured according to ASTM D1622. It further preferably has a specific gravity of 0.55 to 1.1, most preferably 0.6 to 0.95).

Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention has a Shore D hardness of 40-90 as measured according to ASTM D2240. Have. More preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention has a Shore D hardness of 50-75 as measured according to ASTM D2240. Has. Most preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) has a Shore D hardness of 55-70 as measured according to ASTM D2240.

Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) is porous. Preferably, the first continuous non-volatile polymer phase contains a plurality of microelements. Preferably, the plurality of microelements are uniformly dispersed throughout the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10). Preferably, the plurality of microelements is selected from confined bubbles, hollow core polymer materials, liquid filled hollow core polymer materials, water soluble materials and insoluble phase materials (eg mineral oil). More preferably, the plurality of microelements is selected from confined air bubbles and hollow core polymer materials uniformly dispersed throughout the first continuous non-volatile polymer phase (30). Preferably, the plurality of microelements have a weight average diameter of less than 150 μm (more preferably less than 50 μm, most preferably 10 to 50 μm). Preferably, the plurality of microelements comprises a polymer microballoon having a shell wall of polyacrylonitrile or a polyacrylonitrile copolymer (eg, Akzo Nobel's Expancel®). Preferably, the plurality of microelements have a porosity of 0-58% by volume (more preferably 1-58% by volume, most preferably 10-35% by volume) of the polishing layer of the chemical mechanical polishing pad (10). It is blended in the first continuous non-volatile polymer phase (30) in (20). Preferably, the first continuous non-volatile polymer phase (30) in the polishing layer (20) of the chemical mechanical polishing pad (10) is ≤6% by volume (more preferably ≤5% by volume, still more preferably ≤4% by volume". , Most preferably ≦ 3% by volume).

Preferably, the second non-volatile polymer phase (50) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is the second continuous non-volatile polymer phase (52) (eg, FIGS. 7 and 11). ) And a second discontinuous non-volatile polymer phase (58) (see, eg, FIGS. 3 and 15).

Preferably, the second non-volatile polymer phase (50) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention contains a poly-side (P) liquid component and an iso-side (I) liquid component. It is formed by combining.

Preferably, the poly-side (P) liquid component comprises at least one of (P) -side polyols, (P) -side polyamines and (P) -side alcohol amines.

Preferably, the (P) side polyols are selected from the group consisting of diols, polyols, polyoldiols, copolymers thereof and mixtures thereof. More preferably, the (P) side polyols are polyether polyols (for example, poly (oxytetramethylene) glycol, poly (oxypropylene) glycol and mixtures thereof), polycarbonate polyols, polyester polyols, polycaprolactone polyols. , Their mixtures, as well as ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1, Selected from the group consisting of 4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol and tripropylene glycol. It is selected from the group consisting of a mixture thereof with one or more low molecular weight polyols. More preferably, the (P) side polyols are polytetramethylene ether glycol (PTMEG), ester-based polyols (for example, ethylene adipate and butylene adipate), polypropylene ether glycols (PPG), polycaprolactone polyols, and copolymers thereof. And their mixtures are selected from the group.

Preferably, the poly-side (P) liquid component used contains (P) -side polyols, and the (P) -side polyols are high molecular weight polyols having a number average molecular weight _MN of 2,500 to 100,000. including. More preferably, high molecular weight polyols used is 5,000 to 50,000 (more preferably 7,500～25,000, most preferably 10,000 to 12,000) the number average molecular weight M _N of Have.

Preferably, the poly-side (P) liquid component used comprises (P) -side polyols, and the (P) -side polyols comprises high molecular weight polyols having an average of 3-10 hydroxyl groups per molecule. .. More preferably, the high molecular weight polyols used have an average of 4-8 (more preferably 5-7, most preferably 6) hydroxyl groups per molecule.

Examples of commercially available high molecular weight polyols are Specflex® polyols, Voranol® polyols and Voralux® polyols (commercially available from The Dow Chemical Company), Multranol® specialty polyols. And Ultracel® Flexible polyols (commercially available from Bayer MaterialScience LLC) and Pluracol® polyols (commercially available from BASF). Some preferred high molecular weight polyols are listed in Table 1.

Preferably, the (P) side polyamines are selected from the group consisting of diamines and other polyfunctional amines. More preferably, the (P) side polyamines are aromatic diamines and other polyfunctional aromatic amines such as 4,4'-methylene-bis-o-chloroaniline (MbOCA), 4,4'-methylene. -Bis- (3-chloro-2,6-diethylaniline) (MCDEA), dimethylthiotoluene diamine, trimethylene glycol di-p-aminobenzoate, polytetramethylene oxide di-p-aminobenzoate, polytetramethylene oxide mono -P-aminobenzoate, polypropylene oxide di-p-aminobenzoate, polypropylene oxide mono-p-aminobenzoate, 1,2-bis (2-aminophenylthio) ethane, 4,4'-methylene-bis-aniline, diethyl Toluenediamine, 5-tert-butyl-2,4-toluenediamine, 3-tert-butyl-2,6-toluenediamine, 5-tert-amyl-2,4-toluenediamine and 3-tert-amyl-2, It is selected from the group consisting of 6-toluenediamine and chlorotoluenediamine.

Preferably, the (P) side alcohol amines are selected from the group consisting of amine-initiated polyols. More preferably, the (P) -side alcohol amines are selected from the group consisting of amine-initiated polyols containing 1 to 4 (more preferably 2 to 4, most preferably 2) nitrogen atoms per molecule. To. Preferably, the (P) side alcohol amines are selected from the group consisting of amine-initiated polyols having an average of at least 3 hydroxyl groups per molecule. More preferably, the (P) side alcohol amines are selected from the group consisting of amine-initiated polyols having an average of 3 to 6 (more preferably 3 to 5, most preferably 4) hydroxyl groups per molecule. Will be done. Particularly preferred amine-initiated polyols have a number average molecular weight _MN (with) of ≦ 700 (preferably 150-650, more preferably 200-500, most preferably 250-300), 350-1200 mgKOH / g. Has a hydroxyl value of (measured by ASTM test method D4274-11). More preferably, the amine-initiated polyols used have a hydroxyl value of 400-1,000 mgKOH / g (most preferably 600-850 mgKOH / g). Examples of commercially available amine-initiated polyols are the Voranol® family of amine-initiated polyols (commercially available from The Dow Chemical Company) and Quadrol® specialty polyols (N, N, N', N'-tetrakis). (2-Hydroxypropylethylenediamine) (commercially available from BASF), Pluracol® amine-based polyols (commercially available from BASF), Multranol® amine-based polyols (commercially available from Bayer Material Science LLC), triisopropanolamine (TIPA) ) (Commercially available from The Dow Chemical Company) and triethanolamine (TEA) (commercially available from Mallinckrodt Baker Inc.). Some preferred amine-initiated polyols are listed in Table 2.

Preferably, the iso-side (I) liquid component comprises at least one (I) -side polyfunctional isocyanate. Preferably, at least one (I) side polyfunctional isocyanate group contains two reactive isocyanate groups (ie, NCOs).

Preferably, at least one (I) side polyfunctional isocyanate is selected from the group consisting of (I) side aliphatic polyfunctional isocyanates, (I) side aromatic polyfunctional isocyanates and mixtures thereof. More preferably, the (I) side polyfunctional isocyanates are 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, naphthalene diisocyanate-1,5-diisocyanate, trizine diisocyanate, para-. (I) side diisocyanates selected from the group consisting of phenylenediocyanates, xylylene diisocyanates, isophorone diisocyanates, hexamethylene diisocyanates, 4,4'-dicyclohexylmethane diisocyanates, cyclohexanediisocyanates and mixtures thereof. More preferably, at least one (I) side polyfunctional isocyanate is a (I) side terminal isocyanate-modified urethane prepolymer formed by the reaction of (I) side diisocyanates and (I) side prepolymer polyols. is there.

Preferably, at least one (I) side polyfunctional isocyanate is a (I) side terminal isocyanate modified urethane prepolymer, and the (I) side terminal isocyanate modified urethane prepolymer is 2 to 12% by weight of unreacted isocyanate (NCO). ) Has a group. More preferably, the (I) side-terminated isocyanate-modified urethane prepolymer used in the method of the present invention is unreacted in an amount of 2 to 10% by weight (more preferably 4 to 8% by weight, most preferably 5 to 7% by weight). It has an isocyanate (NCO) group.

Preferably, the (I) side terminal isocyanate-modified urethane prepolymer used reacts from the (I) side diisocyanates and the (I) side prepolymer polyols, and the (I) side prepolymer polyols are diols, It is selected from the group consisting of polyols, polyol diols, copolymers thereof and mixtures thereof. More preferably, the (I) side prepolymer polyols are polyether polyols (for example, poly (oxytetramethylene) glycol, poly (oxypropylene) glycol and a mixture thereof), polycarbonate polyols, polyester polyols, polycaprolactone. Polypolymers, mixtures thereof, and ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, Select from the group consisting of 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol and tripropylene glycol. It is selected from the group consisting of a mixture thereof with one or more low molecular weight polyols. More preferably, the (I) side prepolymer polyols are polytetramethylene ether glycol (PTMEG), ester-based polyols (for example, ethylene adipate and butylene adipate), polypropylene ether glycols (PPG), polycaprolactone polyols, and the like. Are selected from the group consisting of copolymers of the above and mixtures thereof. Most preferably, the (I) side prepolymer polyols are selected from the group consisting of PTMEG and PPG.

Preferably, when the (I) side prepolymer polyols are PTMEG, the (I) side terminal isocyanate-modified urethane prepolymer is 2 to 10% by weight (more preferably 4 to 8% by weight, most preferably 6 to 7% by weight). %) Has an unreacted isocyanate (NCO) concentration. Examples of commercially available PTMEG-based terminal isocyanate-modified urethane prepolymers are commercially available from Imutane® prepolymers (COIM USA, Inc., for example PET-80A, PET-85A, PET-90A, PET-93A. , PET-95A, PET-60D, PET-70D, PET-75D), Adiprene® Prepolymer (commercially available from Chemtura, eg LF800A, LF900A, LF910A, LF930A, LF931A, LF939A, LF950A, LF952A, LF600D, LF601D, LF650D, LF667, LF700D, LF750D, LF751D, LF752D, LF753D and L325), Andur® Prepolymers (commercially available from Anderson Development Company, eg 70APLF, 80APLF, 85APLF, 90APLF, 95APLF, 60DPLF , 70APLF, 75APLF).

Preferably, when the (I) side prepolymer polyol is PPG, the (I) side terminal isocyanate-modified urethane prepolymer is 3 to 9% by weight (more preferably 4 to 8% by weight, most preferably 5 to 6% by weight). %) Has an unreacted isocyanate (NCO) concentration. Examples of commercially available PPG-based terminal isocyanate-modified urethane prepolymers are commercially available from Imuthane® prepolymers (COIM USA, Inc., for example PPT-80A, PPT-90A, PPT-95A, PPT-65D. , PPT-75D), Adiprene® prepolymers (commercially available from Chemtura, eg LFG963A, LFG964A, LFG740D) and Andur® prepolymers (commercially available from Anderson Development Company, eg 8000APLF, 9500APLF). , 6500DPLF, 7501DPLF).

Preferably, the (I) side-terminated isocyanate-modified urethane prepolymer used in the method of the present invention is a low-free isocyanate-terminated urethane having a free toluene diisocyanate (TDI) monomer content of less than 0.1% by weight. It is a prepolymer.

Preferably, at least one of the poly-side (P) liquid component and the iso-side (I) liquid component can optionally contain additional liquid substances. For example, at least one of the poly-side (P) liquid component and the iso-side (I) liquid component is a foaming agent (eg, a carbamate foaming agent, eg, Specflex ™ NR556CO ₂ / fat commercially available from The Dow Chemical Company. Group amine adducts), catalysts (eg tertiary amine catalysts such as Dabco® 33LV catalysts and tin catalysts commercially available from Air Products, Inc., such as Fomlez® tin commercially available from Momentive. It can contain a liquid substance selected from the group consisting of catalysts) and surfactants (eg, Tegostab® silicon surfactants commercially available from Evonik). Preferably, the poly-side (P) liquid component contains additional liquid material. More preferably, the poly-side (P) liquid component contains an additional liquid substance, which is at least one of the catalyst and the surfactant. Most preferably, the poly-side (P) liquid component contains a catalyst and a surfactant.

Preferably, the second non-volatile polymer phase (50) in the polishing layer (20) of the chemical mechanical polishing pad (10) has a Shore D hardness of 10-70 as measured according to ASTM D2240. More preferably, the second non-volatile polymer phase (50) in the polishing layer (20) of the chemical mechanical polishing pad (10) is 20-60 (more preferably 25-55, most preferably 25-55) as measured according to ASTM D2240. It preferably has a Shore D hardness of 40-50).

Preferably, the second non-volatile polymer phase (50) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention has an open cell porosity of ≧ 10% by volume. More preferably, the second non-volatile polymer phase (50) in the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is 25 to 75% by volume (more preferably 30 to 60% by volume, most preferably 30 to 60% by volume). Has an open-cell porosity of 45-55% by volume).

Preferably, the first continuous non-volatile polymer phase (30) in the chemical mechanical polishing pad (10) of the present invention is measured from the polishing surface (14) to the base surface perpendicular to the polishing surface (14). It has a plurality of periodic recesses (40) having a depth D to be formed. Preferably, the plurality of periodic recesses (40) have an average depth of D _avg (D _avg < _TP-avg ). More preferably, the plurality of periodic recesses (40) have an average depth of D _avg (D _avg ≤ 0.5 * T _P-avg , more preferably D _avg ≤ 0.4 * T _P-avg , most preferably D. _{It has avg} ≤ 0.375 * T _P-avg ). Preferably, the plurality of periodic recesses is incised by at least one groove (see FIGS. 3, 7, 11 and 15).

Preferably, the plurality of periodic recesses (40) is selected from curved recesses, linear recesses and combinations thereof (see FIGS. 2, 5, 6, 8, 9, 10, 13 and 14).

Preferably, the first continuous non-volatile polymer phase (30) in the chemical mechanical polishing pad (10) of the present invention comprises a plurality of periodic recesses (40), the plurality of periodic recesses being at least two concentric. A group of concave recesses (45) (see FIGS. 2, 5, 6 and 9). Preferably, at least two concentric recess (45) is ≧ 15 mils (preferably 15 to 40 mils, more preferably 25-35 mils, and most preferably 30 mils) average recess depth D _avg of, ≧ 5 Width of mils (preferably 5 to 150 mils, more preferably 10 to 100 mils, most preferably 15 to 50 mils) and ≧ 10 mils (preferably 25 to 150 mils, more preferably 50 to 100 mils, most preferably 50 to 100 mils). It has a pitch of 60-80 mils). Preferably, at least two concentric recesses (45) have a width and a pitch, the width and the pitch being equal.

Preferably, the plurality of periodic recesses (40) can be selected from the group consisting of the plurality of discontinuous periodic recesses (41) and the plurality of interconnected periodic recesses (42). Preferably, when the plurality of periodic recesses (40) are a plurality of discontinuous periodic recesses (41), the second non-volatile polymer phase (50) is the second discontinuous non-volatile polymer phase (58). (See, for example, FIGS. 2, 3 and 5). Preferably, when the plurality of periodic recesses (40) are a plurality of interconnected periodic recesses (42), the second non-volatile polymer phase (50) is the second continuous non-volatile polymer phase (52). (See, for example, FIGS. 6 and 7).

Preferably, the first continuous non-volatile polymer phase (30) in the chemical mechanical polishing pad (10) of the present invention comprises a plurality of discontinuous periodic recesses (41) and a plurality of discontinuous periodic recesses ( 41) is a group of at least two concentric recesses (45) (see, eg, FIG. 2).

Preferably, the first continuous non-volatile polymer phase (30) in the chemical mechanical polishing pad (10) of the present invention comprises a plurality of discontinuous periodic recesses (41), the plurality of periodic recesses (41). , A group of at least two crosshatch recesses (61), the plurality of periodic recesses (41) being incised by at least one groove (62) (see, eg, FIGS. 14 and 15).

Preferably, the first continuous non-volatile polymer phase (30) in the chemical mechanical polishing pad (10) of the present invention comprises a plurality of interconnected periodic recesses (42) and a plurality of interconnected periodicities. A recess is a group of at least two concentric recesses (45), with at least one interconnect (48) interconnecting at least two concentric recesses (45) (eg, FIGS. 6 and 7). See).

Preferably, the continuous non-volatile polymer phase (30) in the chemical mechanical polishing pad (10) of the present invention comprises a plurality of interconnected periodic recesses (40), the plurality of periodic recesses being at least two mutual. A group of connected crosshatch recesses (60) (see, eg, FIG. 8).

Preferably, the second non-volatile polymer phase (50) that fills the plurality of periodic recesses (40) in the chemical mechanical polishing pad (10) of the present invention is a polishing layer (14) perpendicular to the polishing surface (14). It has a height H measured from the base surface (17) of 20) toward the polished surface (14). Preferably, the second non-volatile polymer phase (50) that fills the plurality of periodic recesses (40) is from the base surface (17) of the polishing layer (20) to the polishing surface (17) perpendicular to the polishing surface (14). has an average height H _avg to be measured toward the 14), the difference between the average height H _avg of the polishing layer (average thickness of 20) T _P-avg and second nonvolatile polymer phase (50) The absolute value of ΔS is ≦ 0.5 μm. More preferably, the second non-volatile polymer phase (50) that fills the plurality of periodic recesses (40) is from the base surface (17) of the polishing layer (20) to the polishing surface perpendicular to the polishing surface (14). (14) have an average height H _avg to be measured toward the polishing layer average of the height H _avg of the average thickness of (20) T _P-avg and second nonvolatile polymer phase (50) The absolute value of the difference ΔS is ≦ 0.2 μm. More preferably, the second non-volatile polymer phase (50) that fills the plurality of periodic recesses (40) is from the base surface (17) of the polishing layer (20) to the polishing surface perpendicular to the polishing surface (14). (14) have an average height H _avg to be measured toward the polishing layer average of the height H _avg of the average thickness of (20) T _P-avg and second nonvolatile polymer phase (50) The absolute value of the difference ΔS is ≦ 0.1 μm. Most preferably, the second non-volatile polymer phase (50) that fills the plurality of periodic recesses (40) is from the base surface (17) of the polishing layer (20) to the polishing surface perpendicular to the polishing surface (14). (14) have an average height H _avg to be measured toward the polishing layer average of the height H _avg of the average thickness of (20) T _P-avg and second nonvolatile polymer phase (50) The absolute value of the difference ΔS is ≦ 0.05 μm (see FIGS. 3, 7, 11 and 15).

Preferably, the second non-volatile polymer phase (50) fills the plurality of periodic recesses (40) in the first continuous non-volatile polymer phase (30) with the first continuous non-volatile polymer phase (30). There is a chemical bond with the second non-volatile polymer phase (50). More preferably, the second non-volatile polymer phase (50) fills a plurality of periodic recesses (40) in the first continuous non-volatile polymer phase (30) and fills the first continuous non-volatile polymer phase (30). There is a covalent bond between and the second non-volatile polymer phase (50), and the phases cannot be separated unless the covalent bond between the phases is broken.

One of skill in the art will appreciate selecting a polishing layer (20) with a thickness T _P suitable for use in a chemical mechanical polishing pad (10) for a given polishing operation. Preferably, the polishing layer (20) exhibits an average thickness of T _P-avg along an axis (12) perpendicular to the plane (28) of the polishing surface (14). More preferably, the average thickness T _P-avg is 20-150 mils (more preferably 30-125 mils, most preferably 40-120 mils) (see FIGS. 1, 3, 7, 11 and 15).

Preferably, the polished surface (14) of the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is a base material selected from at least one of a magnetic base material, an optical base material, and a semiconductor base material. It is preferably adapted to polish semiconductor substrates, most preferably semiconductor wafers). Preferably, the polished surface (14) of the polishing layer (20) has at least one of macrotexture and microtexture for promoting polishing of the substrate. Preferably, the polished surface (14) has macrotexture, which (i) mitigates hydroplaning, (ii) affects the flow of the polishing medium, and (iii) alters the stiffness of the polishing layer. To perform at least one of (iv) reducing the edge effect and (v) facilitating the transfer of abrasive debris from the area between the polished surface (14) and the substrate to be polished. Is designed for.

Preferably, the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention further comprises at least one perforation (not shown) and at least one groove (62). More preferably, the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention is opened to the polishing surface (14), and the polishing surface (14) to the base surface (14) is perpendicular to the polishing surface (14). It has at least one groove (62) formed in the polishing layer (20) having a groove depth G _depth from the polishing layer (14) as measured towards 17). Preferably, at least one groove (62) is arranged on the polishing surface (14) so that when the chemical mechanical polishing pad (10) rotates during polishing, at least one groove (62) is placed on the substrate. It is designed to sweep. Preferably, at least one groove (62) is selected from curved grooves, linear grooves and combinations thereof. Preferably, at least one groove (62) has a groove depth G _depth of ≧ 10 mils (preferably 10 to 150 mils). Preferably, at least one groove (62) has a groove depth G _depth ≤ an average depth D _avg of the plurality of periodic recesses. Preferably, at least one groove (62) has a groove depth G _depth > an average depth D _avg of the plurality of periodic recesses. Preferably, at least one groove (62) has a groove depth G _depth selected from ≥10 mils, ≥15 mils and 15-150 mils, a width selected from ≥10 mils and 10-100 mils, and ≥ A groove pattern is formed that includes at least two grooves (62) having pitch combinations selected from 30 mils, ≧ 50, 50-200 mils, 70-200 mils and 90-200 mils. Preferably, at least one groove (62) is selected from (a) at least two concentric grooves, (b) at least one spiral groove, (c) a crosshatch groove pattern, and (d) a combination thereof. (See FIGS. 11 and 15).

Preferably, the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention has abrasive grains <0.2% by weight blended therein. More preferably, the polishing layer (20) of the chemical mechanical polishing pad (10) of the present invention has abrasive grains <1 ppm blended therein.

Preferably, the chemical mechanical polishing pad (10) of the present invention further includes a sub pad (25). Preferably, the subpad (25) is selected from the group consisting of open cell foams, closed cell foams, woven fabric materials, non-woven materials (eg felt, spunbonded and needle punched materials) and combinations thereof. Made of material. One of ordinary skill in the art will be aware of choosing a material composition and thickness T _s suitable for use as a subpad (25). Preferably, the subpad (25) has an average subpad thickness TS _-avg of ≧ 15 mils (more preferably 30-100 mils, most preferably 30-75 mils) (see FIGS. 3 and 7).

One of ordinary skill in the art will know how to select a stack adhesive (23) suitable for use in a chemical mechanical polishing pad (10). Preferably, the stack adhesive (23) is a hot melt adhesive. More preferably, the stack adhesive (23) is a reactive hot melt adhesive. More preferably, the hot melt adhesive (23) exhibits a melting temperature of 50 to 150 ° C., preferably 115 to 135 ° C. in its uncured state, and is a curing reactive hot that exhibits a pot life of ≤90 minutes after melting. It is a melt adhesive. Most preferably, the uncured reactive hot melt adhesive (23) comprises a polyurethane resin (eg, Mor-Melt ™ R5003 commercially available from The Dow Chemical Company).

Preferably, the chemical mechanical polishing pad (10) of the present invention is adapted to interface with the platen of the polishing machine. Preferably, the chemical mechanical polishing pad (10) is adapted to be fixed to the platen of the polishing machine. More preferably, the chemical mechanical polishing pad (10) can be fixed to the platen using at least one of a pressure sensitive adhesive and a vacuum.

Preferably, the chemical mechanical polishing pad (10) comprises a pressure sensitive platen adhesive (70) applied to the lower surface (27) of the subpad (25). Those skilled in the art will know how to select a pressure sensitive adhesive suitable for use as a pressure sensitive platen adhesive (70). Preferably, the chemical mechanical polishing pad (10) also comprises a release liner (75) applied over the pressure sensitive platen adhesive (70), the pressure sensitive platen adhesive (70) of the hard layer (25). It is inserted between the bottom surface (27) and the peel liner (75) (see FIGS. 3 and 7).

An important step in the substrate polishing operation is to determine the end point of processing. One common in situ method for end point detection involves providing the polishing pad with a window that is transparent to light of the selected wavelength. During polishing, when a light beam hits the wafer surface through its window, it reflects off there and passes through the window in the opposite direction to reach a detector (eg, a spectrophotometer). Based on this return signal, the properties of the substrate surface (eg, the thickness of the film on it) can be measured for end point detection. To facilitate such an optical end point detection method, the chemical mechanical polishing pad (10) of the present invention further optionally includes an end point detection window (65). Preferably, the end point detection window (65) is selected from an integrated window incorporated in the polishing layer (20) and an inset type end point detection window block incorporated in the chemical mechanical polishing pad (10). One of ordinary skill in the art will be aware of selecting the appropriate constituent material for the end point detection window for use in the intended polishing process (see Figure 12).

Preferably, the method for polishing the base material of the present invention is a base material selected from at least one of a magnetic base material, an optical base material, and a semiconductor base material (preferably a semiconductor base material, more preferably a semiconductor wafer. A step of providing a base material), a step of providing a chemical mechanical polishing pad of the present invention, a step of causing dynamic contact between the polished surface of the polishing layer and the base material to polish the surface of the base material, and polishing. Includes the step of conditioning the surface with an abrasive grain conditioner. More preferably, in the method for polishing the base material of the present invention, the first continuous non-volatile polymer phase (30) and the second non-volatile polymer phase (50) are formed from the polished surface (14) of the polishing layer (20). It wears evenly. Most preferably, in the method for polishing the base material of the present invention, the first continuous non-volatile polymer phase (30) and the second non-volatile polymer phase (50) are the polished surface (14) of the polishing layer (20). from the service life of the absolute value of the chemical mechanical polishing pad of the difference ΔS between the average height H _avg of the polishing layer average thickness of (20) T _P-avg and second nonvolatile polymer phase (50) (10) It wears at substantially the same rate through which it remains at ≦ 0.5 μm (preferably ≦ 0.2 μm, more preferably ≦ 0.1 μm, most preferably ≦ 0.05 μm).

Some embodiments of the present invention will be described in detail in the following examples.

Examples 1-3: Chemical Mechanical Polishing Pads Commercially available polyurethane polishing pads were used as the first continuous non-volatile polymer phase in the chemical mechanical polishing pads prepared according to Examples 1-3. Particularly, in Example 1, a commercial IC1000 (TM) polyurethane polishing pad having a plurality of concentric periodicity recess having a width and a 120 pitch mil average recess depth D _avg, 60 mil 30 mil second Provided as 1 continuous non-volatile polymer phase. In Example 2, the first continuous non commercial VP5000 (TM) polyurethane polishing pad having a plurality of concentric recesses with an average recess depth D _avg, 35 width and 70 pitch mil mil 30 mil Provided as a sex polymer phase. In Example 3, the first continuous non commercial VP5000 (TM) polyurethane polishing pad having a plurality of concentric recesses with an average recess depth D _avg, 60 width and 120 pitch mil mil 30 mil Provided as a sex polymer phase.

High molecular weight polyether polyol (Voralux® HF505 polyol commercially available from The Dow Chemical Company) 77.62% by weight, monoethylene glycol 21.0% by weight, silicone surfactant (Tegostab commercially available from Evonik) (Registered Trademark) B8418 Surfactant) 1.23% by weight, tin catalyst (Fomrez® UL-28 commercially available from Momentive) 0.05% by weight and tertiary amine catalyst (Air Products, Inc.). Provided is a poly-side (P) liquid component containing 0.10% by weight of Dabco® 33LV catalyst (registered trademark) commercially available from. Further liquid material (Specflex ™ NR556CO ₂ / aliphatic amine adduct commercially available from The Dow Chemical Company) is added to the poly side (P) liquid component at 4 parts by weight per 100 parts by weight of the poly side (P) liquid component. added. Provided is an iso-side (I) liquid component containing 100% by weight of modified diphenylmethane diisocyanates (Isonate ™ 181 MDI prepolymer commercially available from The Dow Chemical Company). Pressurized gas (dry air) was provided.

Then, using a shaft mixer having a (P) side liquid supply port, a (I) side liquid supply port and four tangentially pressurized gas supply ports (MicroLine 45CSM shaft mixer commercially available from Hennecke GmbH). , First Continuous Non-volatile Polymer Phase Material Provided a second non-volatile polymer phase in a plurality of concentric recesses in each of the materials. The poly-side (P) liquid component and the iso-side (I) liquid component are charged to the (P) side charge pressure of 12,500 kPa, the (I) side charge pressure of 17,200 kPa and (I) / (I) / (I) via their respective supply ports. P) It was supplied to the shaft mixer at a weight ratio of 1.564 (providing a stoichiometric ratio of reactive hydrogen groups to NCO groups of 0.95). A mixture was formed by supplying pressurized gas at a supply pressure of 830 kPa through the tangential pressurized gas supply port and giving a total liquid component: gas mass flow rate ratio of 3.8: 1 passing through the shaft mixer. .. The mixture was then discharged from the shaft mixer towards each of the first continuous non-volatile polymer phases at a rate of 254 m / sec and filled into the plurality of recesses to form a composite structure. The composite structure was cured at 100 ° C. for 16 hours. Next, the composite structure was machined flat on a lathe to obtain the chemical mechanical polishing pads of Examples 1 to 3. Next, a groove was formed on the polishing surface of each of the chemical mechanical polishing pads of Examples 1 to 3, and an XY groove pattern having a groove width of 70 mils, a groove depth of 32 mils, and a pitch of 580 mils was provided. ..

Open-cell porosity The open-cell porosity of the commercially available IC1000 ™ polishing pad polishing layer and VP5000 ™ polishing pad polishing layer is reported to be <3% by volume. The open-cell porosity of the second non-volatile polymer phase formed in each of the chemical mechanical polishing pads of Examples 1 to 3 was> 10% by volume.

Comparative Examples PC1 to PC2 and Examples P1 to P3
Chemical Mechanical Polishing Removal Rate Experiment An IC1000 (IC1000) having the same XY groove pattern described in Examples was subjected to a silicon dioxide removal rate polishing test using chemical mechanical polishing pads prepared according to Examples 1 to 3 respectively. A polyurethane polishing pad and VP5000 ™ (both commercially available from Rohm and Haas Electronic Materials CMP Inc.) were used for comparison with the tests obtained in Comparative Examples PC1 and PC2. Specifically, Table 3 shows the silicon dioxide removal rates for each polishing pad. Abrasive removal rate experiments were performed on 200 mm blanket S15KTEN TEOS sheet wafers from Novellus Systems, Inc. A 200 mm Mirra® grinder from Applied Materials was used. All polishing experiments were performed with 8.3 kPa (1.2 psi) downforce, 200 ml / min slurry (ACuPlane ™ 5105 slurry commercially available from Rohm and Haas Electronic Materials CMP Inc.) flow rate, 93 rpm table rotation. It was carried out at a speed and a carrier rotation speed of 87 rpm. The polishing pad was conditioned using a Saesol 8031C Diamond Pad Conditioner (commercially available from Saesol Diamond Ind. Co., Ltd.). Each polishing pad was run for 30 minutes with a conditioner using 31.1N downforce. Further, during polishing, the polishing pad was conditioned 50% in situ from the center of the polishing pad from 1.7 to 9.2 inches with 31.1 N downforce at 10 sweeps per minute. Before and after polishing, the removal rate was measured by measuring the film thickness at an edge exclusion region of 3 mm using a KLA-Tencor FX200 measuring tool using a 49-point spiral scan. Each removal rate experiment was performed three times. Table 3 shows the average removal rate of the triple repeated removal rate experiment for each polishing pad.

Claims (3)

It comprises a polishing layer having an average thickness T _P-avg measured from the base surface to the polishing surface perpendicular to the polishing surface, the base surface and the polishing surface.
The polishing layer contains a first continuous non-volatile polymer phase and a second non-volatile polymer phase.
A plurality of periodicities in which the first continuous non-volatile polymer phase has an average recess depth D _avg from the polished surface, measured from the polished surface to the base surface perpendicular to the polished surface. Has a recess and
The average recess depth D _avg is less than the average thickness T _P-avg .
The plurality of periodic recesses are filled with the second non-volatile polymer phase.
The first continuous non-volatile polymer phase is a reaction product of a first continuous phase terminal isocyanate-modified urethane prepolymer having an unreacted NCO group of 8 to 12% by weight and a first continuous phase curing agent.
The second non-volatile polymer phase is selected from a second continuous non-volatile polymer phase and a second discontinuous non-volatile polymer phase.
The second non-volatile polymer phase is formed by combining the (P) side liquid component and the (I) side liquid component, and the (P) side is the shaft mixing device to which the (P) side liquid component is supplied. The side with the liquid supply port, and the (I) side is the side with the liquid supply port of the shaft mixer to which the liquid component (I) side is supplied.
The (P) side liquid component contains at least one of (P) side polyols, (P) side polyamines, and (P) side alcohol amines.
The (I) side liquid component contains at least one (I) side polyfunctional isocyanate.
The first continuous non-volatile polymer phase has an open cell porosity of ≦ 6% by volume.
The second non-volatile polymer phase has an open cell porosity of ≧ 10% by volume and
A chemical mechanical polishing pad in which the polished surface is suitable for polishing a base material. The second non-volatile polymer phase that fills the plurality of periodic recesses has an average height _Havg measured from the base surface of the polishing layer to the polishing surface perpendicular to the polishing surface. The chemical mechanical polishing pad according to claim 1, wherein the absolute value of the difference ΔS between the average thickness T _P-avg and the average height _Havg is ≦ 0.5 μm. The first continuous non-volatile polymer phase comprises a plurality of hollow core polymer materials, and the plurality of hollow core polymer materials are blended in the first continuous non-volatile polymer phase in an amount of 1 to 58% by volume. 2. The chemical mechanical polishing pad according to 2.