JP6758570B2 - Power converter - Google Patents

Description

The technology disclosed herein relates to a power converter having a stacking unit in which a plurality of coolers are arranged in parallel and a semiconductor module is sandwiched between adjacent coolers.

For example, Patent Document 1 discloses a power conversion device including the above-mentioned laminated unit. Each semiconductor module houses one to several switching elements. A plurality of terminals (for example, a first terminal and a second terminal) that are electrically connected to the switching element internally extend from the main body of the semiconductor module. The terminals of the plurality of semiconductor modules are arranged in an example in the stacking direction of the semiconductor module and the cooler. The first terminal group and the second terminal group are arranged in two rows. A capacitor is placed next to the stacking unit. The first terminal of each semiconductor module and one electrode of the capacitor are connected by the first bus bar, and the second terminal of each semiconductor module and the other electrode of the capacitor element are connected by the second bus bar. The first bus bar and the second bus bar each have a plate-shaped base, and a plurality of branches to be joined to the respective terminals extend from the base. The plate-shaped base of the first bus bar and the plate-shaped base of the second bus bar are arranged close to each other. By arranging the two bases close to each other and facing each other, the inductance of the bus bar is reduced.

Japanese Unexamined Patent Publication No. 2015-015787

The first bus bar and the second bus bar have their respective plate-shaped bases overlapped with each other, and each has a plurality of branches. If such two bus bars are arranged close to each other, they may be short-circuited. The present specification provides a technique for ensuring high insulation between a first bus bar and a second bus bar.

The power conversion device disclosed in the present specification includes a laminated unit, a capacitor, a plate-shaped first bus bar, a plate-shaped second bus bar, a first insulating plate, a second insulating plate, and a plurality of tubular members. It has. In the laminated unit, a plurality of coolers are arranged side by side, and a semiconductor module accommodating a switching element is sandwiched between adjacent coolers. The capacitors are located next to the stacking unit. The first bus bar is joined to a first terminal extending from one side of each of the plurality of semiconductor modules, and is also connected to one electrode of the capacitor. The second bus bar is arranged to face the plate-shaped first bus bar. The second bus bar is joined to a second terminal extending from one side of each semiconductor module and is connected to the other electrode of the capacitor. The first insulating plate is sandwiched between the first bus bar and the second bus bar. The second insulating plate overlaps the second bus bar on the side opposite to the side of the first insulating plate of the second bus bar.

The plate-shaped first bus bar has a plurality of first holes through which each of the plurality of first terminals passes. A first branch that is joined to each first terminal extends from the edge of each first hole. The plate-shaped second bus bar is located on the opposite side of the laminated unit of the first bus bar, and has a plurality of second holes through which each of the plurality of second terminals passes. A second branch that is joined to each second terminal extends from the edge of each second hole. The second bus bar is provided with a plurality of third holes through which each of the first terminal and each of the first branch passes. The first insulating plate is provided with a plurality of fourth holes through which the first terminal and the first branch are passed, and is provided with a plurality of fifth holes through which the second terminal passes. The second insulating plate is provided with a plurality of sixth holes through which the first terminal and the first branch are passed. Each of the plurality of tubular members passes through the third hole of the second bus bar, and the first terminal and the first branch portion pass through the inside thereof. Further, one end of each of the plurality of tubular members is joined around the fourth hole of the first insulating plate, and the other end is joined around the sixth hole of the second insulating plate. Further, one side of the plate-shaped first bus bar passes between the row of the plurality of first terminals and the row of the plurality of second terminals.

The second insulating plate insulates between the base of the first bus bar and the base of the second bus bar. Further, the first terminal and the corresponding first branch portion pass through the inside of the tubular member, and the tubular member itself passes through the third hole of the second bus bar. This structure ensures insulation between the second bus bar and the first terminal and the first branch. Further, one end of the tubular portion is joined to the first insulating plate, and the other end is joined to the second insulating plate. With this structure, high insulation can be ensured between the first bus bar and the second bus bar. Details and further improvements to the techniques disclosed herein will be described in the "Modes for Carrying Out the Invention" section below.

It is a block diagram of the electric power system of the electric vehicle including the electric power conversion device. It is a perspective view of the assembly of a laminated unit, a bus bar and a capacitor unit. It is an exploded perspective view of a laminated unit, a bus bar, and a capacitor unit. It is sectional drawing along the IV-IV line of FIG. It is sectional drawing along the VV line of FIG.

The power conversion device of the embodiment will be described with reference to the drawings. The electric power conversion device of the embodiment is a device mounted on an electric vehicle and converting the electric power of a battery into the driving electric power of a traveling motor. FIG. 1 shows a block diagram of a power system of an electric vehicle 100 including a power conversion device 2. The electric vehicle 100 includes two traveling motors 83a and 83b. Therefore, the power conversion device 2 includes two sets of inverter circuits 13a and 13b. The outputs of the two motors 83a and 83b are combined / distributed by the gearbox 85 and transmitted to the axle 86 (that is, the drive wheels).

The power conversion device 2 is connected to the battery 81 via the system main relay 82. The power conversion device 2 includes a voltage converter circuit 12 that boosts the voltage of the battery 81, and two sets of inverter circuits 13a and 13b that convert the boosted DC power into alternating current.

The voltage converter circuit 12 boosts the voltage applied to the terminal on the battery side and outputs it to the terminal on the inverter side, and steps down the voltage applied to the terminal on the inverter side and outputs it to the terminal on the battery side. It is a bidirectional DC-DC converter capable of performing both step-down operations. The voltage applied to the terminals on the inverter side is the voltage of the regenerative power generated by the motors 83a and 83b. For convenience of explanation, in the following, the terminal on the battery side (low voltage side) will be referred to as a low voltage end 18, and the terminal on the inverter side (high voltage side) will be referred to as a high voltage end 19. Further, the positive end and the negative end of the low pressure end 18 are referred to as a low pressure positive end 18a and a low pressure negative negative end 18b, respectively. The positive electrode end and the negative voltage end of the high voltage end 19 are referred to as a high voltage positive electrode end 19a and a high voltage negative voltage end 19b, respectively.

The voltage converter circuit 12 is composed of a series circuit of two switching elements 9a and 9b, a reactor 7, a filter capacitor 5, and a diode connected in antiparallel to each switching element. The series circuit of the two switching elements 9a and 9b is connected between the high-voltage positive end 19a and the high-voltage negative end 19b. One end of the reactor 7 is connected to the low pressure positive electrode end 18a, and the other end is connected to the midpoint of the series circuit. The filter capacitor 5 is connected between the low pressure positive electrode end 18a and the low pressure negative electrode end 18b. The low voltage negative voltage end 18b is directly connected to the high voltage negative voltage end 19b. The switching element 9b on the low potential side of the series circuit is mainly involved in the step-up operation, and the switching element 9a on the high potential side is mainly involved in the step-down operation. Since the voltage converter circuit 12 of FIG. 1 is well known, detailed description thereof will be omitted. The circuit in the range of the broken line rectangle indicated by reference numeral 8a corresponds to the semiconductor module 8a described later. Reference numerals 25a and 25b indicate terminals extending from the semiconductor module 8a. Reference numeral 25a indicates a terminal (positive electrode terminal 25a) conducting with the high potential side of the series circuit of the switching elements 9a and 9b. Reference numeral 25b represents a terminal (negative electrode terminal 25b) conducting with the low potential side of the series circuit of the switching elements 9a and 9b. As will be described next, the notation of positive electrode terminal 25a and negative electrode terminal 25b is also used in other semiconductor modules.

The inverter circuit 13a has a configuration in which three sets of series circuits of two switching elements are connected in parallel. The switching elements 9c and 9d, the switching elements 9e and 9f, and the switching elements 9g and 9h form a series circuit, respectively. Diodes are connected in anti-parallel to each switching element. The high potential side terminal (positive electrode terminal 25a) of the three sets of series circuits is connected to the high voltage positive electrode end 19a of the voltage converter circuit 12, and the low potential side terminal (negative electrode terminal 25b) of the three sets of series circuits is voltage. It is connected to the high voltage negative electrode end 19b of the converter circuit 12. A three-phase alternating current (U phase, V phase, W phase) is output from the midpoint of the three sets of series circuits. Each of the three sets of series circuits corresponds to the semiconductor modules 8b, 8c, and 8d described later.

Since the configuration of the inverter circuit 13b is the same as that of the inverter circuit 13a, the specific circuit is not shown in FIG. Similar to the inverter circuit 13a, the inverter circuit 13b also has a configuration in which three sets of series circuits of two switching elements are connected in parallel. The terminal on the high potential side of the three sets of series circuits is connected to the high voltage positive end 19a of the voltage converter circuit 12, and the terminal on the low potential side of the three sets of series circuits is connected to the high voltage negative end 19b of the voltage converter circuit 12. Has been done. The hardware corresponding to each series circuit is referred to as a semiconductor module 8e, 8f, 8g.

A smoothing capacitor 6 is connected in parallel to the input ends of the inverter circuits 13a and 13b. In other words, the smoothing capacitor 6 is connected in parallel to the high voltage end 19 of the voltage converter circuit 12. The smoothing capacitor 6 eliminates the pulsation of the current flowing between the voltage converter circuit 12 and the inverters 13a and 13b.

The switching elements 9a-9h are transistors, typically IGBTs (Insulated Gate Bipolar Transistors), but may be other transistors, for example, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). Further, the switching element referred to here is used for power conversion, and is sometimes called a power semiconductor element.

In FIG. 1, each of the broken lines 8a-8g corresponds to a semiconductor module. The power conversion device 2 includes seven sets of a series circuit of two switching elements. The two switching elements that make up the series circuit and the diodes that are connected in antiparallel to each switching element are housed in one package (the main body of the semiconductor module). Hereinafter, when any one of the semiconductor modules 8a to 8g is shown without distinction, it is referred to as the semiconductor module 8.

The high potential side terminal (positive electrode terminal 25a) of the seven semiconductor modules (7 sets of series circuits) is connected to the positive electrode of the smoothing capacitor 6, and the low potential side terminal (negative electrode terminal 25b) is the negative electrode of the smoothing capacitor 6. Connected to the electrode. In FIG. 1, the conductive path in the broken line indicated by reference numeral 30 corresponds to a bus bar (positive electrode bus bar) that connects the positive electrode terminals 25a of the plurality of semiconductor modules 8 and the positive electrode electrodes of the smoothing capacitor 6 to each other. The conductive path in the broken line indicated by reference numeral 40 corresponds to a bus bar (negative electrode bus bar) that connects the plurality of negative electrode terminals 25b and the negative electrode electrodes of the smoothing capacitor 6 to each other. Next, the structures of the plurality of semiconductor modules 8, the positive electrode bus bar 30, and the negative electrode bus bar 40 will be described.

FIG. 2 shows a perspective view of the hardware of the power converter 2. In FIG. 2, the housing of the power conversion device 2 and some parts are not shown. The plurality of semiconductor modules 8 (8a-8g) together with the plurality of coolers 22 constitute a stacking unit 20. Since all the semiconductor modules 8a-8g have the same shape, in FIG. 2 and FIG. 3 described later, reference numeral 8 is attached only to the leftmost semiconductor module as a representative, and the reference numerals are omitted for other semiconductor modules. Further, in FIG. 2 and FIG. 3 described later, reference numerals 22 are attached only to the two leftmost coolers, and reference numerals are omitted for the other coolers.

FIG. 2 is a perspective view of the power conversion device 2, but only the assembly of the laminated unit 20, the positive electrode bus bar 30, the negative electrode bus bar 40, and the capacitor unit 60 is drawn, and the other parts are not shown. The stacking unit 20 is a device in which a plurality of card-type coolers 22 are arranged in parallel, and a card-type semiconductor module 8 is sandwiched between adjacent coolers 22. The card-type semiconductor module 8 is laminated with its wide surface facing the cooler 22. Three terminals (positive electrode terminal 25a, negative electrode terminal 25b, midpoint terminal 25c) extend from one side surface 80a of each semiconductor module 8. In FIG. 2 and FIG. 3, which will be described later, reference numerals 25a, 25b, and 25c are attached only to the terminals of the semiconductor module 8 located at the left end of the laminated unit 20, and the reference numerals indicating the terminals are omitted from the remaining semiconductor modules 8.

As described above, the positive electrode terminal 25a and the negative electrode terminal 25b are a terminal on the high potential side and a terminal on the low potential side of the series circuit housed in the semiconductor module 8. The midpoint terminal 25c is a terminal conducting with the midpoint of the series circuit. In other words, all three terminals 25a-25c are electrically connected to the switching element inside the semiconductor module 8. The three terminals 25a-25c extend in the positive direction of the Z axis in the drawing from one side surface 80a intersecting the wide surface of the semiconductor module 8. A plurality of control terminals extend in the negative direction of the Z axis in the drawing from the opposite side surface of one side surface 80a. The control terminal is a gate terminal conducting with the gate electrode of the switching element built in the semiconductor module 8, a signal terminal conducting with the temperature sensor and the current sensor built in the semiconductor module 8, and the like. ..

Hereinafter, for convenience of explanation, the stacking direction of the cooler 22 and the semiconductor module 8 in the stacking unit 20 is simply referred to as a “stacking direction”. The X direction in the figure corresponds to the stacking direction.

The rightmost cooler 22 in the figure is provided with a refrigerant supply port 28 and a refrigerant discharge port 29. The adjacent coolers 22 are connected by two connecting pipes. One connecting pipe is positioned so as to overlap the refrigerant supply port 28 when viewed from the stacking direction. The other connecting pipe is positioned so as to overlap the refrigerant discharge port 29 when viewed from the stacking direction. A refrigerant circulation device (not shown) is connected to the refrigerant supply port 28 and the refrigerant discharge port 29. The refrigerant supplied from the refrigerant supply port 28 is distributed to all the coolers 22 through one connecting pipe. The refrigerant absorbs heat from the adjacent semiconductor module 8 while passing through the cooler 22. The heat-absorbed refrigerant is discharged from the stacking unit 20 through the other connecting pipe and the refrigerant discharge port 29. Since each semiconductor module 8 is cooled from both sides thereof, the laminated unit 20 has high cooling performance.

The three terminals 25a-25c of each semiconductor module 8 are all flat plates. The positive electrode terminals 25a of the plurality of semiconductor modules 8 are arranged in a row in the stacking direction so as to face the flat surface of the positive electrode terminals 25a of the adjacent semiconductor modules 8. The negative electrode terminals 25b of the plurality of semiconductor modules 8 are also arranged in a row in the stacking direction so as to face the flat surface of the negative electrode terminals 25b of the adjacent semiconductor modules 8. The same applies to the midpoint terminals 25c of the plurality of semiconductor modules 8. The positive electrode terminals 25a, the negative electrode terminals 25b, and the midpoint terminals 25c of the plurality of semiconductor modules 8 are arranged in three rows.

FIG. 3 shows an exploded perspective view of the assembly of the positive electrode bus bar 30, the negative electrode bus bar 40, the laminated unit 20, and the capacitor unit 60 (capacitor element 61). The capacitor unit 60 of FIG. 2 accommodates two capacitor elements 61. In FIG. 3, the case of the capacitor unit 60 is omitted, and the internal capacitor element 61 is drawn. As will be described in detail later, in the case of the capacitor unit 60, the periphery of the capacitor element 61 is filled with a filler. The capacitor element 61 corresponds to the smoothing capacitor 6 in FIG.

The positive electrode terminals 25a of the plurality of semiconductor modules 8 and the positive electrode 61a of the capacitor element 61 are connected by the positive electrode bus bar 30, and the plurality of negative electrode terminals 25b and the negative electrode 61b of the capacitor element 61 are connected by the negative electrode bus bar 40.

The positive electrode bus bar 30 includes a plate-shaped electrode portion 39, a plate-shaped base portion 31, and a plurality of branch portions 33. The electrode portion 39 is connected to the positive electrode 61a of the capacitor element 61. A plurality of first holes 32 are provided in the base portion 31 of the positive electrode bus bar 30, and a branch portion 33 extends in the Z direction from the edge of each first hole 32. The positive electrode terminal 25a of each semiconductor module 8 passes through each of the first holes 32, and the positive electrode terminal 25a and the branch portion 33 are joined.

The negative electrode bus bar 40 includes a plate-shaped electrode portion 49, a plate-shaped base portion 41, and a plurality of branch portions 43. The electrode portion 49 is connected to the negative electrode electrode 61b of the capacitor element 61. A plurality of second holes 42 are provided in the base 41 of the negative electrode bus bar 40, and a branch portion 43 extends in the Z direction from the edge of each of the second holes 42. The negative electrode terminal 25b of each semiconductor module 8 passes through each of the second holes 42, and the negative electrode terminal 25b and the branch portion 43 are joined.

The negative electrode bus bar 40 is located on the opposite side of the laminated unit 20 of the positive electrode bus bar 30. The negative electrode bus bar 40 is provided with a plurality of third holes 45, and the positive electrode terminal 25a of the semiconductor module 8 and the branch portion 33 of the positive electrode bus bar 30 pass through each of the third holes 45. The plate-shaped base 31 of the positive electrode bus bar 30 and the plate-shaped base 41 of the negative electrode bus bar 40 face each other in close proximity to each other.

The first insulating plate 50 is sandwiched between the positive electrode bus bar 30 and the negative electrode bus bar 40. The first insulating plate 50 insulates between the base 31 of the positive electrode bus bar 30 and the base 41 of the negative electrode bus bar 40. The first insulating plate 50 is provided with a plurality of fourth holes 53 and a plurality of fifth holes 54. The positive electrode terminal 25a and the branch portion 33 of the positive electrode bus bar 30 pass through each of the plurality of fourth holes 53. The negative electrode terminal 25b passes through each of the plurality of fifth holes 54. Ribs 51 extending in the Y direction are provided on both sides of the first insulating plate 50 in the stacking direction (X direction). The base 41 of the negative electrode bus bar 40 is accommodated between the pair of ribs 51.

The second insulating plate 70 is arranged so as to overlap the negative electrode bus bar 40 on the side opposite to the side of the first insulating plate 50 of the negative electrode bus bar 40. The second insulating plate 70 is provided with a plurality of sixth holes 73. The positive electrode terminal 25a and the branch portion 33 of the positive electrode bus bar 30 pass through each of the plurality of sixth holes 73. The second insulating plate 70 fits between the pair of ribs 51 of the first insulating plate 50.

A plurality of tubular members 80 are arranged between the first insulating plate 50 and the second insulating plate 70. Each of the plurality of tubular members 80 passes through the third hole of the negative electrode bus bar 40, and the positive electrode terminal 25a and the branch portion 33 of the positive electrode bus bar 30 pass through the inside of the tubular member 80. One end of each of the plurality of tubular members 80 is joined around the fourth hole 53 of the first insulating plate 50, and the other end is joined around the sixth hole 73 of the second insulating plate 70. In FIG. 3, the reference numeral 80 is attached only to the leftmost tubular member, and the reference numeral is omitted for the other tubular members.

The relationship between the positive electrode bus bar 30, the negative electrode bus bar 40, the first insulating plate 50, the second insulating plate 70, and the tubular member 80 will be described with reference to FIG. FIG. 4 is a cross-sectional view taken along the line IV-IV of FIG. 2, which is a cross-sectional view crossing the positive electrode terminal 25a. Note that FIG. 4 shows only a partial cross section of the assembly of the laminated unit 20, the positive electrode bus bar 30, the negative electrode bus bar 40, the first insulating plate 50, the second insulating plate 70, and the tubular member 80.

The positive electrode bus bar 30, the negative electrode bus bar 40, the first insulating plate 50, the tubular member 80, and the second insulating plate 70 are overlapped in this order. As described above, the first insulating plate 50 is sandwiched between the positive electrode bus bar 30 and the negative electrode bus bar 40, and insulates between the two. Of the positive electrode bus bar 30, the negative electrode bus bar 40, the first insulating plate 50, the tubular member 80, and the second insulating plate 70, the positive electrode bus bar 30 is located closest to the semiconductor module 8. The first insulating plate 50 overlaps the positive electrode bus bar 30, the negative electrode bus bar 40 overlaps the positive electrode bus bar 30, and the second insulating plate 70 overlaps the positive electrode bus bar 30. The tubular member 80 is sandwiched between the first insulating plate 50 and the second insulating plate 70, and passes through the third hole 45 of the negative electrode bus bar 40. When viewed from the tip side of the positive electrode terminal 25a, the second insulating plate 70 is arranged to cover the negative electrode bus bar 40.

One end of the branch portion 33 of the positive electrode bus bar 30 is welded to the semiconductor module side of the base portion 31 of the positive electrode bus bar 30. The branch portion 33 extends from the edge of the first hole 32 of the base portion 31. The first hole 32 provided in the positive electrode bus bar 30, the fourth hole 53 provided in the first insulating plate 50, the third hole 45 provided in the negative electrode bus bar 40, the tubular member 80, and the second insulating plate. The sixth hole 73 provided in the 70 overlaps the positive electrode bus bar 30 and the negative electrode bus bar 40 when viewed from the stacking direction (Z direction in the drawing). The positive electrode terminal 25a of the semiconductor module 8 and the branch portion 33 of the positive electrode bus bar 30 pass through these holes and the tubular member 80. The positive electrode terminal 25a and the branch portion 33 of the positive electrode bus bar 30 pass through the inside of the tubular member 80, and the tubular member 80 itself passes through the third hole 45 of the negative electrode bus bar 40. One end of the tubular member 80 is joined to the edge of the fourth hole 53 of the first insulating plate 50, and the other end is joined to the edge of the sixth hole 73 of the second insulating plate 70. The first insulating plate 50, the second insulating plate 70, and the tubular member 80 are made of an insulating resin. The tubular member 80 and the first insulating plate 50 are joined by laser welding. The tubular member 80 and the second insulating plate 70 are also joined by laser welding.

With the above structure, the negative electrode bus bar 40 is separated from the branch portion 33 of the positive electrode bus bar 30 and the positive electrode terminal 25a in the vicinity of the positive electrode terminal 25a. First, the tubular member 80 passes through the third hole 45 of the negative electrode bus bar 40, and the positive electrode terminal 25a and the branch portion 33 pass through the inside of the tubular member 80. With this structure, the periphery of the third hole 45 of the negative electrode bus bar 40 is separated from the positive electrode terminal 25a and the branch portion 33. Further, by joining one end of the tubular member 80 to the edge of the fourth hole 53 of the first insulating plate 50, the surface of the base 41 of the negative electrode bus bar 40 is separated from the positive electrode terminal 25a and the branch 33. Further, since the other end of the tubular member 80 is joined to the edge of the sixth hole 73 of the second insulating plate 70, even if the positive electrode terminal 25a and the branch portion 33 of the positive electrode bus bar 30 are bent, they come into contact with the negative electrode bus bar 40. Is avoided. High insulation is ensured between the positive electrode bus bar 30 and the negative electrode bus bar 40 by the first insulating plate 50, the second insulating plate 70, and the tubular member 80 welded to them. The positive electrode terminal 25a and the branch portion 33 of the positive electrode bus bar 30 are laser welded at a portion (point P in FIG. 4) protruding from the second insulating plate 70.

FIG. 5 shows a cross section along the VV line of FIG. FIG. 5 shows a cross section crossing the tubular member 80. Also in FIG. 5, the tubular member 80 isolates the edge of the third hole 45 of the negative electrode bus bar 40 from the positive electrode terminal 25a and the branch portion 33, and the second insulating plate 70 is formed around the positive electrode terminal 25a. It is understood that it covers the negative electrode bus bar 40.

The internal structure of the capacitor unit 60 will be described with reference to FIG. The capacitor element 61 is housed in the case 68 of the capacitor unit 60. The case 68 is made of an insulating resin. Inside the case 68, a filler 69 is filled around the capacitor element 61. The filler 69 is, for example, a silicone-containing potting material. Inside the case 68, the electrode portion 39 of the positive electrode bus bar 30 is connected to the positive electrode portion 61a of the capacitor element 61, and the electrode portion 49 of the negative electrode bus bar 40 is connected to the negative electrode electrode 61b of the capacitor element 61.

As can be understood from FIGS. 4 and 5, the tubular member 80 and the first insulating plate 50 and the second insulating plate 70 joined to each of both ends thereof are formed around the third hole 45 of the negative electrode bus bar 40. Firmly separate from the positive electrode bus bar 30 and the positive electrode terminal 25a. The above-mentioned structure of the power conversion device 2 of the embodiment can secure high insulation between the positive electrode bus bar 30 and the negative electrode bus bar 40 which are arranged close to each other.

The points to be noted regarding the technique described in the examples will be described. The positive electrode bus bar 30 of the embodiment corresponds to an example of the “first bus bar”, and the negative electrode bus bar 40 corresponds to an example of the “second bus bar”. The positive electrode terminal 25a of the embodiment corresponds to an example of the “first terminal”, and the negative electrode terminal 25b of the embodiment corresponds to an example of the “second terminal”. The branch 33 of the positive electrode bus bar 30 of the embodiment corresponds to an example of the “first branch”, and the branch 43 of the negative electrode bus bar 40 corresponds to an example of the “second branch”. The "positive electrode" and the "negative electrode" of the embodiment may be reversed.

In the power conversion device 2 of the embodiment, the tubular member 80 is a member different from the first insulating plate 50 and the second insulating plate 70. The tubular member 80 may be integrally molded with the first insulating plate 50, or may be integrally molded with the second insulating plate 70.

Although specific examples of the present invention have been described in detail above, these are merely examples and do not limit the scope of claims. The techniques described in the claims include various modifications and modifications of the specific examples illustrated above. The technical elements described in the present specification or drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the techniques illustrated in the present specification or drawings can achieve a plurality of purposes at the same time, and achieving one of the purposes itself has technical usefulness.

2: Power converter 5: Filter capacitor 6: Smoothing capacitor 7: Reactor 8, 8a-8g: Semiconductor module 9a-9h: Switching element 12: Voltage converter circuit 13a, 13b: Inverter circuit 20: Stacking unit 22: Cooler 25a : Positive electrode terminal 25b: Negative electrode terminal 25c: Midpoint terminal 30: Positive electrode bus bar 31, 41: Base 32: First hole 33, 43: Branch 39, 49: Electrode 40: Negative electrode bus bar 42: Second hole 45: No. 3 holes 50: 1st insulating plate 51: rib 52: protrusion 53: 4th hole 54: 5th hole 60: capacitor unit 61: capacitor element 61a: positive electrode electrode 61b: negative electrode electrode 68: case 69: filler 70: first 2 Insulation plate 73: 6th hole 80: Cylinder member 81: Battery 82: System main relay 83a, 83b: Motor 85: Gearbox 100: Electric vehicle

Claims (1)

A laminated unit in which a plurality of coolers are arranged side by side and a semiconductor module accommodating a switching element is sandwiched between the adjacent coolers.
The capacitors placed next to the laminated unit and
Together bonded to the first terminal extending from the side surface of each of the plurality of the semiconductor module, a first bus bar plate of which is connected to one electrode of the capacitor,
Are plate-like first busbar and disposed opposite, with bonded to the second terminal extending from the side surface of the semiconductor module of each, plate-shaped connecting the other electrode of the capacitor No. 2 bus module and
A first insulating plate sandwiched between the first bus bar and the second bus bar,
A second insulating plate that overlaps the second insulating plate on the side opposite to the side of the first insulating plate of the second bus bar.
A plurality of tubular members joined to the first insulating plate and the second insulating plate,
Is equipped with
The first bus bar has a plurality of first holes through which each of the plurality of first terminals passes, and a first branch portion joined from the edge of each of the first holes to each of the first terminals. Is extended,
The second bus bar is located on the opposite side of the laminated unit of the first bus bar, has a plurality of second holes through which each of the plurality of the second terminals passes, and each has a second hole. A second branch portion to be joined to each of the second terminals extends from the edge of the hole, and has a plurality of third holes through which each of the first terminal and the first branch passes.
The first insulating plate includes a plurality of fourth holes through which the first terminal and the first branch portion pass, and also includes a plurality of fifth holes through which the second terminal passes.
The second insulating plate includes a plurality of sixth holes through which the first terminal and the first branch portion pass, respectively.
Each of the plurality of tubular members passes through the third hole of the second bus bar, and the first terminal and the first branch portion pass through the inside thereof, and one end of the tubular member is said. It is joined around the fourth hole of the first insulating plate, and the other end is joined around the sixth hole of the second insulating plate .
A power conversion device in which one side of the plate-shaped first bus bar passes between a plurality of rows of the first terminals and a plurality of rows of the second terminals .

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