JP6740236B2 - ダイシングテープを用いてセラミック蛍光体プレートを発光デバイス(led)ダイ上に取り付ける方法 - Google Patents
ダイシングテープを用いてセラミック蛍光体プレートを発光デバイス(led)ダイ上に取り付ける方法 Download PDFInfo
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- JP6740236B2 JP6740236B2 JP2017546800A JP2017546800A JP6740236B2 JP 6740236 B2 JP6740236 B2 JP 6740236B2 JP 2017546800 A JP2017546800 A JP 2017546800A JP 2017546800 A JP2017546800 A JP 2017546800A JP 6740236 B2 JP6740236 B2 JP 6740236B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Led Device Packages (AREA)
- Dicing (AREA)
- Optical Filters (AREA)
Description
Claims (10)
- ダイシングテープのアクリルフリー且つ金属含有触媒フリーの粘着層上にセラミック蛍光体をマウントすることと、
前記ダイシングテープからの前記セラミック蛍光体をセラミック蛍光体プレートへとダイシングすることと、
前記ダイシングテープから前記セラミック蛍光体プレートを取り外すことと、
前記セラミック蛍光体プレートを発光デバイス(LED)ダイ上に取り付けることと、
を有する方法。 - 前記粘着層は、アクリル及び白金を含まないシリコーン熱成形樹脂を有し、且つ、白金、錫、又は亜鉛を有する金属含有触媒を含んでいない、請求項1に記載の方法。
- 前記ダイシングテープはテープフレームに取り付けられる、請求項1に記載の方法。
- 前記粘着層は、光潜在性又は光開始性のアミン触媒を有し、且つ
前記セラミック蛍光体プレートを取り外すことは、前記粘着層を光現像して、前記セラミック蛍光体プレートへの前記粘着層の接着ボンドを弱めることを有する、
請求項1に記載の方法。 - 前記セラミック蛍光体プレートをLEDダイ上に取り付けることは、前記LEDダイ上に高屈折率(HRI)シリコーン系接着剤を塗布することを含む、請求項1に記載の方法。
- 前記粘着層は、前記ダイシングテープの支持フィルム上、又は該支持フィルム上の別の粘着層上に形成され、前記別の粘着層はアクリルを有する、請求項1に記載の方法。
- 前記ダイシングテープを、
前記ダイシングテープの支持フィルム上、又は該支持フィルム上の別の粘着層上に、前記粘着層用の液体材料を付与し、且つ
前記支持フィルム又は前記別の粘着層上に前記液体材料をブレードコーティングして前記粘着層を形成する
ことによって形成する、
ことを更に有する請求項1に記載の方法。 - 前記ダイシングテープを、
前記ダイシングテープの支持フィルム上、又は該支持フィルム上の別の粘着層上に、前記粘着層用の液体材料を付与し、且つ
前記支持フィルム又は前記別の粘着層上に前記液体材料をオーバーモールドして前記粘着層を形成する
ことによって形成する、
ことを更に有する請求項1に記載の方法。 - 前記ダイシングテープを、
前記ダイシングテープの支持フィルム上、又は該支持フィルム上の別の粘着層上に、ロールツーロールプロセスによって前記粘着層を押し出す
ことによって形成する、
ことを更に有する請求項1に記載の方法。 - 前記ダイシングテープの前記アクリルフリーの粘着層上に前記セラミック蛍光体をマウントすることは、
前記ダイシングテープの支持フィルム上、又は該支持フィルム上の別の粘着層上に、粘着フィルムをラミネートして前記粘着層を形成し、そして、当該粘着層上に前記セラミック蛍光体を配置すること、又は
前記支持フィルム上又は前記別の粘着層上に、同一プロセスにて、前記セラミック蛍光体及び前記粘着フィルムをラミネートすること
を有する、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562129282P | 2015-03-06 | 2015-03-06 | |
US62/129,282 | 2015-03-06 | ||
PCT/US2016/020843 WO2016144732A1 (en) | 2015-03-06 | 2016-03-04 | Method for attaching ceramic phosphor plates on light-emitting device (led) dies using a dicing tape, method to form a dicing tape, and dicing tape |
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JP2020124858A Division JP7012790B2 (ja) | 2015-03-06 | 2020-07-22 | ダイシングテープを用いてセラミック蛍光体プレートを発光デバイス(led)ダイ上に取り付ける方法、ダイシングテープを形成する方法、及びダイシングテープ |
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JP2018511941A JP2018511941A (ja) | 2018-04-26 |
JP6740236B2 true JP6740236B2 (ja) | 2020-08-12 |
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JP2017546800A Active JP6740236B2 (ja) | 2015-03-06 | 2016-03-04 | ダイシングテープを用いてセラミック蛍光体プレートを発光デバイス(led)ダイ上に取り付ける方法 |
JP2020124858A Active JP7012790B2 (ja) | 2015-03-06 | 2020-07-22 | ダイシングテープを用いてセラミック蛍光体プレートを発光デバイス(led)ダイ上に取り付ける方法、ダイシングテープを形成する方法、及びダイシングテープ |
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US (2) | US10734543B2 (ja) |
EP (1) | EP3266048B1 (ja) |
JP (2) | JP6740236B2 (ja) |
KR (1) | KR102470834B1 (ja) |
CN (1) | CN108028292B (ja) |
TW (1) | TWI787147B (ja) |
WO (1) | WO2016144732A1 (ja) |
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CN108028292B (zh) * | 2015-03-06 | 2020-11-17 | 亮锐控股有限公司 | 使用切割带将陶瓷磷光板附着在发光器件(led)管芯上的方法、形成切割带的方法以及切割带 |
US10522728B2 (en) | 2017-01-26 | 2019-12-31 | Maven Optronics Co., Ltd. | Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same |
JP6876499B2 (ja) * | 2017-04-17 | 2021-05-26 | 積水化学工業株式会社 | 半導体デバイス用粘着剤組成物及び半導体デバイス用粘着テープ |
US10128419B1 (en) | 2017-08-03 | 2018-11-13 | Lumileds Llc | Method of manufacturing a light emitting device |
KR102378919B1 (ko) * | 2017-08-03 | 2022-03-28 | 루미레즈 엘엘씨 | 발광 디바이스를 제조하는 방법 |
US10879431B2 (en) | 2017-12-22 | 2020-12-29 | Lumileds Llc | Wavelength converting layer patterning for LED arrays |
JP2019201089A (ja) * | 2018-05-15 | 2019-11-21 | マブン オプトロニックス カンパニー リミテッドMaven Optronics Co., Ltd. | チップスケールパッケージング発光素子の斜角チップ反射器およびその製造方法 |
JP6791208B2 (ja) * | 2018-05-22 | 2020-11-25 | 信越半導体株式会社 | 発光素子の製造方法 |
US11545597B2 (en) * | 2018-09-28 | 2023-01-03 | Lumileds Llc | Fabrication for precise line-bond control and gas diffusion between LED components |
KR102176416B1 (ko) * | 2019-04-24 | 2020-11-10 | 스카이다이아몬드 주식회사 | 형광 박판 다이싱 방법 |
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- 2016-03-04 EP EP16714616.6A patent/EP3266048B1/en active Active
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Publication number | Publication date |
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EP3266048A1 (en) | 2018-01-10 |
JP2020170877A (ja) | 2020-10-15 |
US10734543B2 (en) | 2020-08-04 |
US20200350462A1 (en) | 2020-11-05 |
CN108028292B (zh) | 2020-11-17 |
TW201708459A (zh) | 2017-03-01 |
JP7012790B2 (ja) | 2022-01-28 |
TWI787147B (zh) | 2022-12-21 |
CN108028292A (zh) | 2018-05-11 |
KR20170128410A (ko) | 2017-11-22 |
KR102470834B1 (ko) | 2022-11-28 |
JP2018511941A (ja) | 2018-04-26 |
EP3266048B1 (en) | 2019-10-02 |
US20180053877A1 (en) | 2018-02-22 |
WO2016144732A1 (en) | 2016-09-15 |
US11563141B2 (en) | 2023-01-24 |
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