JP6638817B2 - Semiconductor module - Google Patents

Description

  The present disclosure relates to a semiconductor module.

  This application claims priority based on Japanese Patent Application No. 2016-160140 filed on August 17, 2016, and incorporates all the contents described in the Japanese application.

  As a semiconductor module, a semiconductor module described in Patent Document 1 is known. The semiconductor module described in Patent Literature 1 includes a semiconductor element for power conversion, a drive circuit for driving a control electrode of the semiconductor element, a control circuit for controlling operation of the drive circuit, and a storage device storing characteristics of the semiconductor element. And In the semiconductor module described in Patent Document 1, by communication between the storage device and the control circuit, for example, the control circuit acquires the characteristics of the semiconductor element during the operation of the semiconductor module, and via the drive circuit according to the characteristics. The control circuit drives the semiconductor element.

JP 2014-14233 A JP 2008-125240 A

  A semiconductor module according to an aspect of the present disclosure includes a semiconductor device, a drive control unit that drives the semiconductor device, a storage device that can communicate with the drive control unit, and records element information of the semiconductor device, A communication control circuit that is provided on a communication path between the storage device and the drive control unit and that switches the communication path between a communicable state and a non-communicable state according to a communication control signal.

FIG. 1 is a schematic diagram illustrating a schematic configuration of the semiconductor module according to the first embodiment. FIG. 2 is a diagram for explaining a communication control signal. FIG. 3 is a schematic diagram showing a schematic configuration of a modified example of the semiconductor module shown in FIG. FIG. 4 is a schematic diagram illustrating a schematic configuration of the semiconductor module according to the second embodiment. FIG. 5 is a schematic diagram illustrating a connection relationship between the communication control circuit and the photocoupler unit.

  The switching speed of a power semiconductor element such as a semiconductor module described in Patent Document 1 is increasing. In this case, for example, as pointed out in Patent Document 2, large radiation / conduction noise occurs. Therefore, for example, when communication between a storage device and a control circuit in Patent Document 1 is performed by an I2C (Inter-Integrated-Circuit) method which is an example of serial communication, noise may be superimposed on a communication line for communication. obtain. As described above, when noise is superimposed on the communication line, the control circuit may erroneously recognize that the noise is a communication signal. If the control circuit erroneously recognizes the noise as a communication signal, the control element drives the semiconductor element via the drive circuit based on the erroneous characteristics, so that the semiconductor element malfunctions.

  Therefore, an object of the present disclosure is to provide a semiconductor module capable of suppressing a malfunction of a semiconductor element.

Hereinafter, embodiments of the technology of the present disclosure will be described with reference to the drawings. In the description of the drawings, the same elements will be denoted by the same reference symbols, without redundant description.
[Description of Embodiment]
First, the contents of the embodiments of the technology of the present disclosure will be listed and described.

  A semiconductor module according to an aspect includes a semiconductor element, a drive control unit that drives the semiconductor element, a storage device that can communicate with the drive control unit, and records element information of the semiconductor element, A communication control circuit that is provided on a communication path with the drive control unit and switches the communication path between a communicable state and a non-communicable state according to a communication control signal.

  In this configuration, the storage device in which the element information of the semiconductor element is stored can communicate with the drive control unit. Therefore, the drive control unit can drive the semiconductor element according to the element characteristic unique to the semiconductor element with reference to the element characteristic information stored in the storage device. As a result, in the semiconductor module, the characteristics of the semiconductor element can be effectively used. Further, a communication control circuit is provided on a communication path between the storage device and the drive control unit, and the communication control circuit controls communication between the storage device and the drive control unit. Therefore, for example, even if the radiation / conduction noise generated by the switching operation of the semiconductor element is superimposed on the communication path, if the communication control circuit has switched the communication path to the communication disabled state, the drive control unit includes: It is not affected by noise superimposed on the communication path. Therefore, the drive control unit can drive the semiconductor element by referring to the accurate element information, and as a result, malfunction of the semiconductor element can be suppressed.

  The communication control circuit may include a switching unit that switches the communication path between a communication enabled state and a communication disabled state according to the communication control signal. In this case, the communication path is switched between a communication enabled state and a communication disabled state by an operation of the switching unit according to the communication control signal.

  A semiconductor module according to an aspect is provided on the communication path, insulates the storage device and the drive control unit from each other, and transmits signals bidirectionally between the storage device and the drive control unit. It may further have an insulating circuit capable of transmitting.

  In this case, the communication path is insulated by the insulating circuit between the storage device side and the drive control unit side. Therefore, different reference potentials can be set for the storage device and the drive control unit.

  In the semiconductor module according to one aspect, the drive control unit may include a signal generation unit that generates the communication control signal, and the communication control signal may be input from the drive control unit to the communication control circuit.

  A semiconductor module according to an embodiment may include a signal generation unit that includes a photocoupler unit and generates the communication control signal. In this case, since the signal generation unit includes the photocoupler unit, for example, the signal generation unit performs communication control based on a signal from the external device without depending on a reference potential of an external device arranged outside the semiconductor module. A signal can be generated and the communication control signal can be input to the communication control circuit.

  The drive control unit includes a drive circuit that drives the semiconductor element, and a control circuit that controls at least one of a drive voltage and a drive current that are outputs of the drive circuit and that can communicate with the storage device. You may.

  In this case, the control circuit communicates with the storage device and can refer to element information in the storage device. Therefore, the control circuit can control the drive unit based on the referenced element information.

  In the semiconductor module according to one aspect, in the communication disabled state of the communication path, a first portion of the communication path connecting the communication control circuit and the storage device is connected to the communication control circuit and the drive unit. It may be electrically disconnected from the second part of the communication path connecting to the control unit.

In this case, since the length of the communication path electrically connected to the drive control unit is reduced to the length of only the second portion, the communication path connected to the drive control unit is affected by radiation and conduction noise. Is less affected by the voltage. Therefore, malfunction of the semiconductor element can be suppressed.
[Details of Embodiment]
A specific example of an embodiment of the technology of the present disclosure will be described below with reference to the drawings. The present invention is not limited to these examples, but is indicated by the appended claims, and is intended to include all modifications within the scope equivalent to the appended claims. In the description of the drawings, the same elements will be denoted by the same reference symbols, without redundant description.

  As conceptually shown in FIG. 1, the semiconductor module 1 according to one embodiment includes a semiconductor element 10, a drive control unit 20, a storage device 30, and communication control circuits 41 and 42. The semiconductor module 1 is applied to a power conversion circuit such as an inverter, for example. In the present embodiment, the communication within the semiconductor module 1 and the communication between the semiconductor module 1 and an external device use an I2C communication interface and a two-wire communication system unless otherwise specified.

  The semiconductor element 10 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Each of the drain and the source of the semiconductor element 10 is connected to the terminal T1 and the terminal T2 of the semiconductor module 1. Therefore, the terminal T1 and the terminal T2 correspond to the drain terminal and the source terminal of the semiconductor module 1. The semiconductor element 10 is a semiconductor switching element that conducts or cuts off between the drain and the source according to a drive signal applied to the gate from the drive control unit 20.

  The material of the semiconductor element 10 is a wide band gap semiconductor such as silicon carbide (SiC) and gallium nitride (GaN). An example of the material of the semiconductor element 10 may be silicon (Si).

  The drive control unit 20 is a device that includes a drive circuit 21 and a control circuit 22, and drives and controls the semiconductor element 10. The drive control unit 20 is electrically connected to the power supply voltage terminal T3 and the reference potential terminal T4 of the semiconductor module 1, and is supplied with a voltage between the power supply voltage terminal T3 and the reference potential terminal T4. Since the potential of the power supply voltage terminal T3 is higher than the potential of the reference potential terminal T4, the power supply voltage terminal T3 and the reference potential terminal T4 are also a high voltage terminal and a low voltage terminal, respectively.

  Since the drive circuit 21 and the control circuit 22 are circuits constituting the drive control unit 20, the same voltage supplied from the power supply voltage terminal T3 and the reference potential terminal T4 is applied to the drive circuit 21 and the control circuit 22. . The drive circuit 21 and the control circuit 22 may be mounted as one device (or an integrated circuit) or may be mounted separately. When the drive circuit 21 and the control circuit 22 are separately mounted, each of the drive circuit 21 and the control circuit 22 may be connected to the power supply voltage terminal T3 and the reference potential terminal T4.

  The drive circuit 21 applies a drive signal to the gate (control terminal) of the semiconductor element 10 to provide a state in which the drain and the source in the semiconductor element 10 are conductive and a state in which the drain and the source are disconnected. And a circuit for switching.

  The control circuit 22 is connected to the drive circuit 21. The control circuit 22 is a circuit that controls the operation of the drive circuit 21, that is, the drive voltage, drive current, output timing, and the like of the drive signal output from the drive circuit 21.

  The control circuit 22 is connected to the control signal terminal T7 of the semiconductor module 1. The control circuit 22 controls the output timing of a drive signal output from the drive circuit 21 to the semiconductor element 10 according to a control signal input from outside the semiconductor module 1 via the control signal terminal T7.

The control circuit 22 is configured to be able to communicate with the storage device 30 via the communication path 50. The control circuit 22 determines the drive voltage of the drive signal output by the drive circuit 21 based on the element characteristic information of the semiconductor element 10 (for example, the threshold voltage characteristic of the semiconductor element 10 with respect to temperature) stored in the storage device 30 in advance. At least one of the drive currents is controlled.
The control circuit 22 is connected to the communication control circuit 41 and the communication control circuit 42. The control circuit 22 outputs a communication control signal Ssc, which will be described later, to the communication control circuit 41 and the communication control circuit 42 from the control signal output terminal t1.

  In order to control the drive circuit 21, communicate with the storage device 30, and output the communication control signal Ssc, the control circuit 22 includes a control unit 22A, a communication interface 22B, and the like. An example of the control unit 22A is a CPU or an FPGA. The control unit 22A generates the communication control signal Ssc. Therefore, the control circuit 22, more specifically, the control unit 22A functions as a signal generation unit. As described above, the communication interface 22B is an I2C communication interface, and employs a two-wire communication method. Therefore, as shown in FIG. 1, the communication path 50 between the control circuit 22 and the storage device 30 includes a data communication path 51 and a clock communication path 52.

  The storage device 30 is electrically connected to the power supply voltage terminal T5 and the reference potential terminal T6 of the semiconductor module 1, and is supplied with a voltage from the power supply voltage terminal T5 and the reference potential terminal T6. Since the potential of the power supply voltage terminal T5 is higher than the potential of the reference potential terminal T6, the power supply voltage terminal T5 and the reference potential terminal T6 are also a high voltage terminal and a low voltage terminal, respectively. The reference potential input to the reference potential terminal T6 functions as a ground in the storage device 30. The potential of the reference potential terminal T6 and the potential of the reference potential terminal T4 may be the same. In the description of the configuration in FIG. 1, the potential of the reference potential terminal T6 and the potential of the reference potential terminal T4 are the same unless otherwise specified.

  The storage device 30 includes a storage unit 31, a communication interface 32, and a control unit 33 that controls them. The storage unit 31 stores element characteristic information of the semiconductor element 10. The storage unit 31 may be configured to be capable of only writing data, or may be configured to be capable of writing and erasing nonvolatile data. Examples of the storage unit 31 to which only data can be written are a PROM, an EPROM, and an EEPROM. An example of the non-volatile storage unit 31 is a flash memory.

  The storage device 30 is connected to the data signal terminal T8 and the clock signal terminal T9 of the semiconductor module 1. The element characteristic information of the semiconductor element 10 in the storage unit 31 is transmitted to an external device disposed outside the semiconductor module 1 and the storage device 30 via the communication interface 32, the data signal terminal T8, and the clock signal terminal T9. Are data written to the storage device 30 from the external device by communicating with each other. Such writing of the element characteristic information into the storage unit 31 may be performed only once when the semiconductor module 1 is manufactured. However, for example, when the semiconductor module 1 is configured so that the semiconductor element 10 is detachable, the semiconductor element 10 can be replaced when the semiconductor element 10 is damaged for some reason. When the semiconductor element 10 is exchanged, the semiconductor module 1 can be operated according to the new characteristic of the semiconductor element 10 by writing the element characteristic information of the semiconductor element 10 after the exchange into the storage unit 31.

  As described above, the communication interface 32 communicates with an external device to acquire element characteristic information to be stored at the stage when the semiconductor module 1 is manufactured, and communicates with the control circuit 22 included in the drive control unit 20. The communication interface 32 is an I2C communication interface.

  The communication control circuit 41 is disposed on the data communication path 51 of the communication path 50, is connected to the control circuit 22 via the data communication path 51, and has a different control from the data communication path 51. Connected to the control circuit 22 via a signal path for communication. Similarly, the communication control circuit 42 is arranged on the clock communication path 52 of the communication path 50, is connected to the control circuit 22 via the clock communication path 52, and is connected to the clock communication path 52. It is connected to the control circuit 22 via another control signal path. The communication control circuits 41 and 42 communicate with the communication path 50 between the storage device 30 and the control circuit 22 according to the communication control signal Ssc input from the control circuit 22 via the control signal path. The data communication path 51 and the clock communication path 52 are switched between a communication enabled state and a communication disabled state.

  The communication control signal Ssc is a voltage signal. In the present embodiment, as shown in FIG. 2, a case of a predetermined voltage (or a higher voltage) is associated with a communicable state, and a case of less than the predetermined voltage is associated with a communication disabled state. However, the case where the voltage is lower than the predetermined voltage may be associated with the communication enabled state, and the case where the voltage is the predetermined voltage (or higher) may be associated with the communication disabled state.

  When the communication control signal Ssc is lower than the predetermined voltage, it corresponds to not asserting the communication control signal Ssc. In the following description, output or input of the communication control signal Ssc means output or input of a predetermined voltage (or higher) unless otherwise specified.

  The communication control circuit 41 and the communication control circuit 42 are switching units that are turned on / off according to the communication control signal Ssc from the control circuit 22. Examples of the communication control circuit 41 and the communication control circuit 42 include a transfer gate (transmission gate). The communication control circuit 41 and the communication control circuit 42 may be, for example, analog switch ICs. In the present embodiment, unless otherwise specified, the communication is possible when the communication control circuit 41 and the communication control circuit 42 are ON, and the communication is disabled when the communication control circuit 41 and the communication control circuit 42 are OFF.

  The communication control circuit 41 has a control terminal 41a, a first terminal 41b, and a second terminal 41c. The control terminal 41a is connected to the control signal output terminal t1, the first terminal 41b is connected to the data signal terminal t2 of the control circuit 22, and the second terminal 41c is connected to the data signal terminal t4 of the storage device 30. Have been. When the communication control signal Ssc is input to the control terminal 41a, the connection between the first terminal 41b and the second terminal 41c is conducted (ON state), and when the communication control signal Ssc is not input to the control terminal 41a. , The connection between the first terminal 41b and the second terminal 41c is shut off (OFF state).

  Similarly, the communication control circuit 42 has a control terminal 42a, a first terminal 42b, and a second terminal 42c. The control terminal 42a is connected to the control signal output terminal t1, the first terminal 42b is connected to the clock signal terminal t3 of the control circuit 22, and the second terminal 42c is connected to the clock signal terminal t5 of the storage device 30. Have been. When the communication control signal Ssc is input to the control terminal 42a, conduction between the first terminal 42b and the second terminal 42c is conducted (ON state), and when the communication control signal Ssc is not input to the control terminal 42a. In the example, the connection between the first terminal 42b and the second terminal 42c is shut off (OFF state).

  The second terminal 41c and the second terminal 42c of the communication control circuit 41 and the communication control circuit 42 are further connected to the power supply voltage terminal T3 via the resistor R1. In other words, the power supply voltage terminal T3 is connected to the wiring between the second terminal 41c and the second terminal 42c and the data signal terminal t4 and the clock signal terminal t5 via the resistor R1. The resistor R1 functions as a pull-up resistor, and the value of the resistor R1 may be, for example, 1 kΩ to several kΩ. The power supply voltage terminal T3 may be connected to the first terminal 41b and the first terminal 42b, the data signal terminal t2, and the clock signal terminal t3 via the resistor R1.

  In the semiconductor module 1, when the control circuit 22 outputs the communication control signal Ssc from the control signal output terminal t1, the conduction between the first terminal 41b and the second terminal 41c of the communication control circuit 41 is switched, and the communication control circuit The connection between the first terminal 42b and the second terminal 42c is switched to the conductive state. That is, the data signal terminal t2 and the data signal terminal t4 are connected, and the clock signal terminal t3 and the clock signal terminal t5 are connected. As a result, the control circuit 22 and the storage device 30 can communicate with each other. On the other hand, when the control circuit 22 does not output the communication control signal Ssc from the control signal output terminal t1, the connection between the first terminal 41b and the second terminal 41c of the communication control circuit 41 is in a non-conductive state (disconnected state). The state between the first terminal 42b and the second terminal 42c of the communication control circuit 42 is in a non-conductive state (cut-off state). That is, since the data communication path 51 and the clock communication path 52 are shut off, the control circuit 22 and the storage device 30 cannot communicate with each other. Therefore, the communication path 50 is switched from the communication enabled state to the communication disabled state by the communication control circuit 41 and the communication control circuit 42 according to the communication control signal Ssc.

  Next, the operation and effect of the semiconductor module 1 will be described.

  When manufacturing the semiconductor element 10, a plurality of semiconductor elements 10 are usually manufactured under the same conditions. Although it is expected that the device characteristics of each semiconductor device 10 manufactured under the same conditions are the same, the device characteristics of the plurality of semiconductor devices 10 vary due to factors such as manufacturing errors. In the semiconductor module 1, the storage device 30 stores element characteristic information of the semiconductor element 10 incorporated in the semiconductor module 1, and the storage device 30 and the control circuit 22 can communicate with each other. Therefore, the control circuit 22 can control the semiconductor element 10 while effectively utilizing the element characteristics of the semiconductor element 10 with reference to the element characteristic information in the storage device 30.

  In the semiconductor module 1, the communication control circuit 41 and the communication control circuit 42 are provided on the communication path 50, specifically, the data communication path 51 and the clock communication path 52, so that the semiconductor element 10 and the semiconductor module 1 malfunction. Can be prevented. This will be described in comparison with a case where the semiconductor module 1 does not include the communication control circuit 41 and the communication control circuit 42.

  A case where the semiconductor module 1 does not include the communication control circuit 41 and the communication control circuit 42 will be described. Generally, when two devices (for example, the storage device 30 and the control circuit 22 of the drive control unit 20) communicate via a communication line, it is known that the input impedance of each device is high. In particular, in I2C, since the standard specifies an open drain interface, a high resistance (for example, 1 kΩ to several kΩ) is provided between each receiving end of two communicating devices and the power supply voltage (Vcc) of each device. ). Therefore, as described above, the input impedance of the devices at both ends of the communication line is high.

  On the other hand, when the switching frequency of the semiconductor element 10 is improved to about 1000 kHz to 1 MHz, the communication clock frequency (for example, several hundred kHz to 1 MHz) becomes close to the switching frequency. Further, it is known that when the switching frequency of the semiconductor element 10 increases, large radiation / conduction noise occurs.

  As described above, if the input impedance at both ends of the communication path 50 is high in the state where the switching frequency of the semiconductor element 10 approaches the clock frequency and large radiation / conduction noise occurs, as described above, The conducted noise is superimposed on the communication line constituting the communication path 50. When the radiation / conduction noise is superimposed on the communication line in this way, for example, the drive control unit 20 (specifically, the control circuit 22) erroneously recognizes the noise as element characteristic information in the storage device 30. There is a risk. As described above, when the control circuit 22 erroneously recognizes noise as element characteristic information, the control circuit 22 drives the semiconductor element 10 via the drive circuit 21 according to the erroneous element characteristic. As a result, the semiconductor element 10 malfunctions or operates at an inappropriate operating point.

  On the other hand, the semiconductor module 1 having the above-described configuration includes the communication control circuit 41 and the communication control circuit 42. The communication control circuit 41 and the communication control circuit 42 control the drive control unit 20 based on the communication control signal Ssc. The communication between the circuit 22 and the storage device 30 is controlled. Accordingly, the control circuit 22 communicates with the storage device 30 only when the communication control circuit 41 and the communication control circuit 42 set the communication path 50 (the data communication path 51 and the clock communication path 52) to the communicable state. Then, the device characteristic information in the storage device 30 is referred to. Therefore, the control circuit 22 is prevented from referring to an unintended signal (noise). In other words, the control circuit 22 can drive the semiconductor element 10 more reliably based on accurate element characteristic information. As a result, malfunction of the semiconductor element 10 is prevented. From such a viewpoint, the communication control circuit 41 and the communication control circuit 42 are also malfunction prevention circuits.

  From the viewpoint of reducing the influence of radiation and conduction noise, the shorter the communication path 50 is, the better. Therefore, in the semiconductor module 1, it is preferable that the control circuit 22 and the storage device 30 are arranged close to each other. The communication control circuit 41 and the communication control circuit 42 are preferably arranged near the control circuit 22.

  In the communication disabled state of the communication path 50, the first part of the communication path 50 connecting the communication control circuit 41 and the storage device 30 is connected to the communication path connecting the communication control circuit 41 and the control circuit 22. 50 is electrically isolated from the second part. That is, only the second portion of the communication path 50 located between the communication control circuit 41 and the control circuit 22 is electrically connected to the data signal terminal t2 and the clock signal terminal t3 of the control circuit 22. State. Due to the influence of the radiation and conduction noise, the voltage fluctuation applied to the second portion of the communication path 50 decreases as the length of the signal line of the second portion decreases. Therefore, as described above, the communication control circuit 41 and the communication control circuit 42 are preferably arranged near the control circuit 22. Here, “disposed in the vicinity” means that the magnitude of the voltage fluctuation in the second portion of the communication path 50 due to radiation / conduction noise is reduced by the control circuit 22 because the length of the second portion is reduced. This means that the signal information is arranged at a position that is small enough not to be erroneously recognized as signal information.

Since the semiconductor module 1 uses a wire for communication, the manufacturing cost of the semiconductor module 1 is reduced as compared with the case where wireless communication is used, for example. Further, in order to reduce the influence of noise on the communication path 50, for example, it is not necessary to surround the communication path 50 with a metal plate. Therefore, the configuration of the semiconductor module 1 is a configuration that contributes to weight reduction of the semiconductor module 1.
(Modification 1-1)
With reference to FIG. 3, a semiconductor module 1A according to a modification of the semiconductor module 1 will be described.

  As shown in FIG. 3, in each of the data communication path 51 and the clock communication path 52, an insulation circuit 43 and an insulation circuit 44 are provided between the communication control circuits 41 and 42 and the storage device 30. Have been. In this point, the configuration of the semiconductor module 1A mainly differs from the configuration of the semiconductor module 1 shown in FIG. The semiconductor module 1A according to the modified example will be described focusing on this difference.

  The insulating circuit 43 and the insulating circuit 44 include an insulating capacitor, and insulate the storage device 30 and the control circuit 22 from each other. The insulating circuit 43 and the insulating circuit 44 are configured to be able to transmit a signal from the storage device 30 to the control circuit 22 and to be able to transmit a signal from the control circuit 22 to the storage device 30. Therefore, the insulating circuits 43 and 44 function as a bidirectional isolator. The insulating circuit 43 and the insulating circuit 44 may be, for example, an insulating capacitor, or may be an integrated circuit including the insulating capacitor, for example, an IC such as ISO1540 or ISO1541 manufactured by Texas Instrument.

  One end (the end on the side of the storage device 30) of the insulating circuit 43 is connected to the data signal terminal t4 of the storage device 30, and the other end (the end on the side of the communication control circuit 41) is connected to the second terminal 41c of the communication control circuit 41. It is connected to the. Similarly, one end of the insulating circuit 44 is connected to the clock signal terminal t5 of the storage device 30, and the other end is connected to the second terminal 42c of the communication control circuit 42.

  In a mode including the insulating circuit 43 and the insulating circuit 44, the data signal terminal t4 of the storage device 30 and one end of the insulating circuit 43 are connected to the power supply voltage terminal T5 via the resistor R2, and the clock signal terminal t5 and the insulating One end of the circuit 44 is connected to the power supply voltage terminal T5 via the resistor R2. In other words, the power supply voltage terminal T5 is connected to the wiring connecting the data signal terminal t4 and one end of the insulating circuit 43 and the wiring connecting the clock signal terminal t5 and one end of the insulating circuit 44 via the resistor R2. Connected. The resistor R2 also functions as a pull-up resistor, and an example of the value is the same as that of the resistor R1.

  In this modification, the other end of the insulating circuit 43 (the end on the side of the communication control circuit 41) and the second terminal 41c of the communication control circuit 41, the other end of the insulating circuit 44 (the end on the side of the communication control circuit 42) and the communication control The second terminal 42c of the circuit 42 is connected to the power supply voltage terminal T3 via the resistor R1.

  Since the insulating circuit 43 and the insulating circuit 44 can transmit signals in both directions, in the semiconductor module 1A, the communication control circuit 41 and the communication control circuit 42 store the data in the control circuit 22 in the same manner as in the semiconductor module 1. Communication with the device 30 can be controlled. Therefore, the present modification has at least the same functions and effects as those of the semiconductor module 1 of the embodiment shown in FIG.

In the semiconductor module 1A, the insulation between the storage device 30 and the control circuit 22 is achieved by the insulation circuits 43 and 44. Therefore, a reference potential different from the reference potential serving as the ground for the drive circuit 21 and the control circuit 22 can be applied to the storage device 30 from the reference potential terminal T6. In other words, different potentials can be applied to the reference potential terminal T4 and the reference potential terminal T6, respectively. In this case, the semiconductor module 1A has versatility, and can be suitably applied to the upper arm side of a power conversion device such as an inverter circuit.
(2nd Embodiment)
FIG. 4 is a conceptual diagram of a semiconductor module according to the second embodiment. The semiconductor module 1B illustrated in FIG. 4 mainly differs from the configuration of the semiconductor module 1A illustrated in FIG. 3 in that the semiconductor module 1B includes a temperature sensor 60 and further includes a photocoupler unit 45 and a photocoupler unit 46. .
The semiconductor module 1B will be described focusing on this difference.

  The temperature sensor 60 is connected to the power supply voltage terminal T3 and the reference potential terminal T4. The temperature sensor 60 is disposed near the semiconductor element 10 and detects a temperature near the semiconductor element 10. The temperature sensor 60 is connected to the detection result output terminal T10 of the semiconductor module 1B and to the control circuit 22.

  The detection result output terminal T10 is connected to an external monitoring device 70 arranged outside the semiconductor module 1A. Normally, since the reference potential of the external monitoring device 70 is different from the reference potential of the temperature sensor 60, an insulation circuit that involves voltage conversion may be provided between the detection result output terminal T10 and the external monitoring device 70.

  The external monitoring device 70 is a microcontroller having a CPU and a storage unit, or an application specific integrated circuit (ASIC). The storage unit of the external monitoring device 70 stores element characteristic information of the semiconductor element 10 (temperature characteristic information in the case of the second embodiment). The external monitoring device 70 needs to compare the detection result output from the temperature sensor 60 with the element characteristic information of the semiconductor element 10 and change the driving condition of the semiconductor element 10 according to the temperature near the semiconductor element 10. Determine the presence or absence of sex. Such a determination can be made by the CPU of the external monitoring device 70. In the second embodiment, the external monitoring device 70 constantly outputs a control signal, and stops outputting the control signal when the external monitoring device 70 determines that “change is necessary”. In other words, when the control signal constantly output from the external monitoring device 70 is a High signal, the external monitoring device 70 outputs a Low signal when “change is necessary”. When the control signal is output, the driving condition of the semiconductor element 10 is not changed, so that the signal output from the external monitoring device 70 is a maintenance signal or a reference signal that maintains the driving condition of the semiconductor element 10.

  The external monitoring device 70 is connected to the control signal terminal T11 of the semiconductor module 1B, and the control signal output by the external monitoring device 70 is input to the control signal terminal T11.

  The photocoupler unit 45 is provided between the control signal terminal T11 and the communication control circuit 41. The photocoupler unit 46 is provided between the control signal terminal T11 and the communication control circuit 42. I have. In the second embodiment, unless otherwise specified, the photocoupler unit 45 and the photocoupler unit 46 are signal generation units that generate a communication control signal Ssc in accordance with a signal input to the control signal terminal T11. Therefore, the control circuit 22 included in the semiconductor module 1B does not have a function of generating the communication control signal Ssc. Therefore, the control circuit 22 only needs to have the data signal terminal t2 and the clock signal terminal t3.

  FIG. 5 is a schematic diagram illustrating a connection relationship between the communication control circuit 41 and the photocoupler unit 45 and a connection relationship between the communication control circuit 42 and the photocoupler unit 46. The example shown in FIG. 5 is a configuration assuming that the same voltage as the voltage between the power supply voltage terminal T3 and the reference potential terminal T4 is applied to the external monitoring device 70.

  The photo coupler unit 45 has a light emitting diode 45A and a photodiode 45B. Similarly, the photocoupler unit 46 has a light emitting diode 46A and a photodiode 46B.

  The light emitting diode 45A functions as a light emitting element of the photocoupler unit 45. The anode of the light emitting diode 45A is connected to the control signal terminal T11. The cathode of the light emitting diode 45A is connected to the reference potential terminal T6 via the resistor R3. An example of the value of the resistor R3 is 10 kΩ.

  The photodiode 45B functions as a light receiving element of the photocoupler unit 45. The anode of the photodiode 45B is connected to the reference potential terminal T4, and the cathode of the photodiode 45B is connected to the power supply voltage terminal T3 via the resistor R4. An example of the value of the resistor R4 may be similar to that of the resistor R1. The cathode of the photodiode 45B is also connected to the control terminal 41a of the communication control circuit 41. In other words, the control terminal 41a is connected to a wiring between the cathode of the photodiode 45B and the resistor R4.

  The light emitting diode 46A functions as a light emitting element of the photocoupler unit 46. The anode of the light emitting diode 46A is connected to the control signal terminal T11. The cathode of the light emitting diode 46A is connected to the reference potential terminal T6 via the resistor R3.

  The photodiode 46B functions as a light receiving element of the photocoupler unit 46. The anode of the photodiode 46B is connected to the reference potential terminal T4, and the cathode of the photodiode 46B is connected to the power supply voltage terminal T3 via the resistor R4. The cathode of the photodiode 46B is also connected to a control terminal 42a of the communication control circuit 42. In other words, the control terminal 42a is connected to a wiring between the cathode of the photodiode 46B and the resistor R4.

  In the configuration of the photocoupler unit 45 and the photocoupler unit 46, when the control signal from the external monitoring device 70 is not input to the control signal terminal T11, the light emitting diode 45A and the light emitting diode 46A do not emit light. The photodiode 46B is off. As a result, a voltage corresponding to the power supply voltage terminal T3 is input to the communication control circuit 41 and the communication control circuit 42. In other words, the communication control signal Ssc is input from the photocoupler unit 45 and the photocoupler unit 46 to the control terminal 41a of the communication control circuit 41 and the control terminal 42a of the communication control circuit 42.

  Conversely, when a control signal from the external monitoring device 70 is input to the control signal terminal T11, the light emitting diode 45A and the light emitting diode 46A emit light, so that the photodiode 46B and the photodiode 46B become conductive, and the communication control is performed. No voltage is input to the circuit 41 and the communication control circuit 42. In other words, the communication control signal Ssc is not output from the photocoupler units 45 and 46 to the control terminal 41a of the communication control circuit 41 and the control terminal 42a of the communication control circuit 42.

  In the semiconductor module 1B, when the detection result of the temperature sensor is input to the external monitoring device 70, the external monitoring device 70 determines whether a control signal is output according to the input detection result of the temperature sensor.

  When the external monitoring device 70 outputs a control signal, the photocoupler unit 45 and the photocoupler unit 46 do not output the communication control signal Ssc to the communication control circuit 41 and the communication control circuit 42. In this case, the communication control circuit 41 and the communication control circuit 42 are in the OFF state, that is, the storage device 30 and the control circuit 22 are in the communication disabled state.

  On the other hand, when the external monitoring device 70 stops outputting the control signal, the photocoupler unit 45 and the photocoupler unit 46 output the communication control signal Ssc to the communication control circuit 41 and the communication control circuit 42. In this case, the communication control circuit 41 and the communication control circuit 42 are in the ON state, that is, the storage device 30 and the control circuit 22 are in a communicable state.

  As described above, in the semiconductor module 1B, the photocoupler unit 45 and the photocoupler unit 46 generate the communication control signal Ssc according to the state of the control signal from the external monitoring device 70. According to the communication control signal Ssc, the communication control circuit 41 and the communication control circuit 42 control the communication enabled state and the communication disabled state of the data communication path 51 and the clock communication path 52. Therefore, the semiconductor module 1B has at least the same functions and effects as the semiconductor module 1A.

  In the semiconductor module 1B, the control circuit 22 refers to the element characteristic information in the storage device 30 only when the driving condition of the semiconductor element 10 needs to be changed according to the detection result of the temperature sensor 60. As described above, the control circuit 22 refers to the element characteristic information in the storage device 30 to control the drive circuit 21 under the drive conditions corresponding to the temperature near the semiconductor element 10 input from the temperature sensor 60 to the control circuit 22. it can. Thus, the semiconductor element 10 can be driven under conditions that are optimal for the surrounding temperature, so that malfunction of the semiconductor element 10 can be prevented and the performance of the semiconductor element 10 can be effectively utilized.

  In the semiconductor module 1B, a control signal from the external monitoring device 70 is input to the photocoupler unit 45 and the photocoupler unit 46. The photo coupler unit 45 and the photo coupler unit 46 generate a communication control signal Ssc according to the input control signal, and input the communication control signal Ssc to the communication control circuit 41 and the communication control circuit 42. Therefore, even if the reference potential of the external monitoring device 70 is different from the reference potential of the control circuit 22, the communication control signal Ssc can be appropriately input to the communication control circuits 41 and 42.

  Via the control signal terminal T11, the communication control signal Ssc generated by the photocoupler unit 45 and the photocoupler unit 46 in response to a control signal from outside the semiconductor module 1B is input to the communication control circuit 41 and the communication control circuit 42. In the embodiment, the communication control circuit 41, the communication control circuit 42, and the control circuit 22 may be arranged near the control signal terminal T11.

The semiconductor module 1B may be used for, for example, a lower arm or an upper arm in a power conversion circuit.
(Modification 2-1)
In the second embodiment, the mode in which each of the photocoupler unit 45 and the photocoupler unit 46 is a signal generation unit has been described. However, each signal generation unit may include a signal inversion circuit together with the photocoupler unit 45 and the photocoupler unit 46. For convenience of description, a signal generation unit including the photocoupler unit 45 and the signal inversion circuit is referred to as a first signal generation unit, and a signal generation unit including the photocoupler unit 46 and the signal inversion circuit is referred to as a second signal generation unit. Call it.

The signal inversion circuit included in the first signal generation unit is provided between the cathode of the photodiode 45B and the control terminal 41a of the communication control circuit 41, and inverts the voltage state of the cathode of the photodiode 45B to control the terminal 41a. To enter. Similarly, the signal inversion circuit of the second signal generation unit is provided between the cathode of the photodiode 46B and the control terminal 42a of the communication control circuit 42, and inverts the voltage state of the cathode of the photodiode 46B. Input to the control terminal 42a. Therefore, the first and second signal generation units generate the communication control signal Ssc having the same voltage state as the voltage state of the control signal input to the control signal terminal T11, and input the communication control signal Ssc to the communication control circuit 41 and the communication control circuit 42. I do. Therefore, in the modified example 2-1, the external monitoring device 70 outputs a control signal when it is determined that “change of the driving condition of the semiconductor element 10 is necessary”, and when it determines that “change is unnecessary”, Does not output a signal.
(Modification 2-2)
The light receiving element included in the photocoupler unit 45 and the photocoupler unit 46 included in the semiconductor module 1B is not limited to a photodiode, and may be, for example, a phototransistor. The detection result of the temperature sensor 60 may not be used for generating the communication control signal Ssc.

  According to the present disclosure, it is possible to provide a semiconductor module capable of suppressing a malfunction of a semiconductor element.

  As described above, the embodiments of the technology of the present disclosure and the modifications thereof have been described. However, the present invention is not limited to the various embodiments described so far, and various changes may be made without departing from the spirit of the present invention. It is possible.

  For example, also in the first embodiment, between the control signal output terminal t1 of the control circuit 22 and the communication control circuits 41 and 42, the photocoupler units 45 and 46 functioning as signal generation units are provided. May be provided. In this case, the light emitting diode 45A and the anode of the light emitting diode 46A included in the photocoupler unit 45 and the photocoupler unit 46 are connected to the control signal output terminal t1, and the cathodes of the light emitting diode 45A and the light emitting diode 46A are connected to the reference potential terminal T4. I just need. The connection relationship between the photodiode 45B and the power supply voltage terminal T3, the reference potential terminal T4, and the communication control circuit 41, and the connection between the photodiode 46B and the power supply voltage terminal T3, the reference potential terminal T4, and the communication control circuit 42. The relationship is the same as in the second embodiment. In this embodiment, the control circuit 22 may output the control signal from the control signal output terminal t1 under the same conditions as the conditions under which the external monitoring device 70 outputs the control signal described in the second embodiment. That is, when the control circuit 22 does not communicate with the storage device 30, a control signal may be output, and when the control circuit 22 communicates with the storage device 30, the output of the control signal may be stopped.

  In the first embodiment, between the control signal output terminal t1 of the control circuit 22 and the communication control circuit 41 and the communication control circuit 42, the first signal generation unit described in the modified example 2-1 of the second embodiment. And a second signal generator may be provided. In this case, the light emitting diode 45A and the anode of the light emitting diode 46A included in the photocoupler unit 45 and the photocoupler unit 46 are connected to the control signal output terminal t1, and the cathodes of the light emitting diode 45A and the light emitting diode 46A are connected to the reference potential terminal T4. I just need. The connection relationship between the photodiode 45B and the power supply voltage terminal T3, the reference potential terminal T4, and the communication control circuit 41, and the connection between the photodiode 46B and the power supply voltage terminal T3, the reference potential terminal T4, and the communication control circuit 42. The relationship is the same as in the second embodiment. In this embodiment, the control circuit 22 may output a signal having the same voltage state as the communication control signal Ssc described in the first embodiment from the control signal output terminal t1.

  The semiconductor module has a plurality of semiconductor elements and a plurality of drive circuits for each of the plurality of semiconductor elements, and the storage device may store element characteristic information of each semiconductor element. In this case, for example, the drive control unit may have one control circuit for a plurality of drive circuits, or may have a plurality of control circuits respectively corresponding to the plurality of drive circuits. When the drive control unit has one control circuit for a plurality of drive circuits, the plurality of drive circuits each have a communication interface and communicate with the control circuit, so that the control circuit controls each drive circuit. You can control.

  The semiconductor element as a semiconductor switching element included in the semiconductor module may be a transistor other than a MOSFET, and may be, for example, an insulated gate bipolar transistor (IGBT).

  The communication interface included in the storage device and the control circuit is not limited to the I2C method. Further, the storage device and the control circuit may have, for example, a three-wire communication interface. The communication path may be configured according to the communication interface employed by the semiconductor module.

  As shown in FIGS. 1 and 3, the configuration for outputting the communication control signal from the control circuit includes, for example, setting the communication interface portion to High-Z on the basis of a signal generated internally, or a CMOS input interface. It can also be realized by changing to

  In the above description, the communication control circuit is described as a switching unit, but the communication control circuit may include other elements as long as the communication control circuit has a switching unit.

1, 1A, 1B: semiconductor module, 10: semiconductor element, 20: drive control unit, 21: drive circuit, 22: control circuit, 22A: control unit (signal generation unit), 30: storage device, 41, 42: communication Control circuit (switching section), 45, 46 photocoupler section (signal generation section), 50 communication path, 51 communication path for data, 52 communication path for clock.

Claims (7)

A semiconductor element;
A drive control unit that drives the semiconductor element;
A storage device that can communicate with the drive control unit and records element information of the semiconductor element;
A communication control circuit that is provided on a communication path between the storage device and the drive control unit, and switches the communication path to a communicable state and a communicable state according to a communication control signal,
And a semiconductor module. The communication control circuit has a switching unit that switches the communication path to a communication enabled state and a communication disabled state according to the communication control signal.
The semiconductor module according to claim 1. An insulation circuit is provided on the communication path, insulates the storage device and the drive control unit from each other, and further can transmit signals bidirectionally between the storage device and the drive control unit. ,
The semiconductor module according to claim 1. The drive control unit has a signal generation unit that generates the communication control signal, the communication control signal is input from the drive control unit to the communication control circuit,
The semiconductor module according to claim 1. Including a photo coupler unit, having a signal generation unit that generates the communication control signal,
The semiconductor module according to claim 1. The drive control unit includes:
A drive circuit for driving the semiconductor element;
A control circuit that controls at least one of a drive voltage and a drive current that are outputs of the drive circuit, and is capable of communicating with the storage device.
Having,
The semiconductor module according to claim 1. In the communication disabled state of the communication path, a first part of the communication path connecting the communication control circuit and the storage device connects the communication control circuit and the drive control unit. Electrically disconnected from a second portion of the communication path;
The semiconductor module according to claim 1.

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